CN102477258B - Chemically mechanical polishing liquid - Google Patents
Chemically mechanical polishing liquid Download PDFInfo
- Publication number
- CN102477258B CN102477258B CN201010564124.4A CN201010564124A CN102477258B CN 102477258 B CN102477258 B CN 102477258B CN 201010564124 A CN201010564124 A CN 201010564124A CN 102477258 B CN102477258 B CN 102477258B
- Authority
- CN
- China
- Prior art keywords
- application according
- mechanical polishing
- polishing liquid
- silver
- abrasive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 63
- 239000007788 liquid Substances 0.000 title claims abstract description 15
- 230000007547 defect Effects 0.000 claims abstract description 10
- -1 silver ions Chemical class 0.000 claims abstract description 9
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000004094 surface-active agent Substances 0.000 claims abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 32
- 239000000126 substance Substances 0.000 claims description 15
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims description 10
- 239000013543 active substance Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical compound [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 claims description 5
- 229910001961 silver nitrate Inorganic materials 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 claims description 4
- OUYCCCASQSFEME-QMMMGPOBSA-N L-tyrosine Chemical group OC(=O)[C@@H](N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-QMMMGPOBSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000003002 pH adjusting agent Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- RBWNDBNSJFCLBZ-UHFFFAOYSA-N 7-methyl-5,6,7,8-tetrahydro-3h-[1]benzothiolo[2,3-d]pyrimidine-4-thione Chemical compound N1=CNC(=S)C2=C1SC1=C2CCC(C)C1 RBWNDBNSJFCLBZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910002012 Aerosil® Inorganic materials 0.000 claims description 2
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052921 ammonium sulfate Inorganic materials 0.000 claims description 2
- 235000011130 ammonium sulphate Nutrition 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- 229910052755 nonmetal Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 229940096017 silver fluoride Drugs 0.000 claims description 2
- REYHXKZHIMGNSE-UHFFFAOYSA-M silver monofluoride Chemical compound [F-].[Ag+] REYHXKZHIMGNSE-UHFFFAOYSA-M 0.000 claims description 2
- YPNVIBVEFVRZPJ-UHFFFAOYSA-L silver sulfate Chemical compound [Ag+].[Ag+].[O-]S([O-])(=O)=O YPNVIBVEFVRZPJ-UHFFFAOYSA-L 0.000 claims description 2
- HNDVDQJCIGZPNO-YFKPBYRVSA-N L-histidine Chemical compound OC(=O)[C@@H](N)CC1=CN=CN1 HNDVDQJCIGZPNO-YFKPBYRVSA-N 0.000 claims 4
- AYFVYJQAPQTCCC-GBXIJSLDSA-N L-threonine Chemical compound C[C@@H](O)[C@H](N)C(O)=O AYFVYJQAPQTCCC-GBXIJSLDSA-N 0.000 claims 4
- MTCFGRXMJLQNBG-REOHCLBHSA-N (2S)-2-Amino-3-hydroxypropansäure Chemical compound OC[C@H](N)C(O)=O MTCFGRXMJLQNBG-REOHCLBHSA-N 0.000 claims 2
- ODHCTXKNWHHXJC-VKHMYHEASA-N 5-oxo-L-proline Chemical compound OC(=O)[C@@H]1CCC(=O)N1 ODHCTXKNWHHXJC-VKHMYHEASA-N 0.000 claims 2
- ONIBWKKTOPOVIA-BYPYZUCNSA-N L-Proline Chemical compound OC(=O)[C@@H]1CCCN1 ONIBWKKTOPOVIA-BYPYZUCNSA-N 0.000 claims 2
- ODKSFYDXXFIFQN-BYPYZUCNSA-N L-arginine Chemical compound OC(=O)[C@@H](N)CCCN=C(N)N ODKSFYDXXFIFQN-BYPYZUCNSA-N 0.000 claims 2
- 229930064664 L-arginine Natural products 0.000 claims 2
- 235000014852 L-arginine Nutrition 0.000 claims 2
- QIVBCDIJIAJPQS-VIFPVBQESA-N L-tryptophane Chemical compound C1=CC=C2C(C[C@H](N)C(O)=O)=CNC2=C1 QIVBCDIJIAJPQS-VIFPVBQESA-N 0.000 claims 2
- MTCFGRXMJLQNBG-UHFFFAOYSA-N Serine Natural products OCC(N)C(O)=O MTCFGRXMJLQNBG-UHFFFAOYSA-N 0.000 claims 2
- 239000004473 Threonine Substances 0.000 claims 2
- 229960002885 histidine Drugs 0.000 claims 2
- 229960002898 threonine Drugs 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 19
- 229910052721 tungsten Inorganic materials 0.000 abstract description 19
- 239000010937 tungsten Substances 0.000 abstract description 19
- 238000000227 grinding Methods 0.000 abstract description 9
- 150000002978 peroxides Chemical class 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000012530 fluid Substances 0.000 description 14
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 9
- 239000006227 byproduct Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 229910052742 iron Inorganic materials 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- MVFCKEFYUDZOCX-UHFFFAOYSA-N iron(2+);dinitrate Chemical compound [Fe+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MVFCKEFYUDZOCX-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- BYGOPQKDHGXNCD-UHFFFAOYSA-N tripotassium;iron(3+);hexacyanide Chemical compound [K+].[K+].[K+].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] BYGOPQKDHGXNCD-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- LELOWRISYMNNSU-UHFFFAOYSA-N hydrogen cyanide Chemical compound N#C LELOWRISYMNNSU-UHFFFAOYSA-N 0.000 description 2
- 239000003112 inhibitor Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229960005191 ferric oxide Drugs 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- HNDVDQJCIGZPNO-UHFFFAOYSA-N histidine Natural products OC(=O)C(N)CC1=CN=CN1 HNDVDQJCIGZPNO-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 231100000004 severe toxicity Toxicity 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000036561 sun exposure Effects 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- OUYCCCASQSFEME-UHFFFAOYSA-N tyrosine Natural products OC(=O)C(N)CC1=CC=C(O)C=C1 OUYCCCASQSFEME-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
The invention discloses a chemically mechanical polishing liquid. The polishing liquid comprises water, a grinding agent, silver ions, sulfate ions, a peroxide and a surfactant. The polishing liquid which has a very high tungsten polishing speed substantially reduces chip surface defects.
Description
Technical field
The present invention relates to a kind of chemical mechanical polishing liquid.
Background technology
Along with the development of semiconductor technology, and the continuous increase of large-scale integrated circuit interconnection layer, the planarization of conductive layer and insulating medium layer becomes particularly crucial.Twentieth century eighties, the chemically machinery polished initiated by IBM Corporation (CMP) technology is considered to the most effective means of current global planarizartion.
Chemically machinery polished (CMP) is combined into by chemical action, mechanical effect and this two kinds of effects.It is usually by a grinding stage with polishing pad, and one for carrying the grinding head composition of chip.Wherein grinding head fixes chip, is then pressed on polishing pad in the front of chip.When carrying out chemically machinery polished, grinding head moves at polishing pad Linear or rotates along the direction of motion the same with grinding stage.Meanwhile, the slurries containing abrasive are dripped on polishing pad, and are laid on polishing pad because of centrifugation.Chip surface realizes global planarizartion under machinery and chemical dual function.
The main mechanism of metal level chemically machinery polished (CMP) is considered to: oxygenant is first by oxidation on metal surface film forming, this layer of oxide film machinery is removed by the abrasive being representative with silicon-dioxide and aluminum oxide, producing new metallic surface continues oxidized, and these two kinds effects are worked in coordination with and carried out.
As the tungsten of one of chemically machinery polished (CMP) object, at higher current densities, anti-electron transfer capabilities is strong, and can form good ohmic contact with silicon, so can be used as filler metal and the diffusion impervious layer of contact hole and interlayer hole.
The chemically machinery polished (CMP) of tungsten, has multiple method:
1991, F.B.Kaufman etc. report the method (" Chemical Mechanical Polishing for Fabricating Patterned W Metal Featuresas Chip Interconnects " of the Tripotassium iron hexacyanide for tungsten CMP, Journal of the Electro chemical Society, Vol.138, No.11, in November, 1991).
United States Patent (USP) 5340370 discloses a kind of formula for tungsten CMP (CMP), and wherein containing the 0.1M Tripotassium iron hexacyanide, 5% silicon oxide, simultaneously containing the acetate as pH buffer reagent.Because the Tripotassium iron hexacyanide is under UV-light or sun exposure, and in acidic medium, the prussic acid of severe toxicity can be decomposited, thus limit it and widely use.
United States Patent (USP) 5527423, United States Patent (USP) 6008119, United States Patent (USP) 6284151 etc. discloses Fe (NO
3)
3, alumina system is used for the method for tungsten mechanical polishing (CMP).This polishing body ties up to static etch rate (static etch rate) aspect and has advantage, but owing to adopting aluminum oxide as abrasive, product defects (defect) aspect exists significantly not enough.The iron nitrate of high density makes the pH value of polishing fluid be strongly-acid simultaneously, severe corrosion equipment, meanwhile, generates iron rust, pollutes polishing pad.In addition, the iron ion of high density, as moveable metal ion, seriously reduces the reliability of semiconductor components and devices.
United States Patent (USP) 5225034, United States Patent (USP) 5354490 discloses and hydrogen peroxide and Silver Nitrate is jointly used, and is used as the finishing method that oxygenant carries out metal (copper).But in the type method, Silver Nitrate consumption very large (being greater than 2%), causes polishing fluid high cost, abrasive is unstable, easily precipitate, the problems such as hydrogen peroxide fast decoupled.
United States Patent (USP) 5958288 discloses and iron nitrate is used as catalyzer, and hydrogen peroxide is used as oxygenant, carries out the method for tungsten CMP.It is to be noted that in that patent, refer to multiple transition metal, be confirmed in experiment and significantly effectively only have ferro element.Therefore the actual implementation result of this invention and scope very limited.Although the method considerably reduces the consumption of iron nitrate, because iron ion still exists, and Fenton reaction occurs between hydrogen peroxide, hydrogen peroxide can rapidly and tempestuously decomposition failure, the therefore problem of this polishing fluid existence and stability difference.
United States Patent (USP) 5980775 and United States Patent (USP) 6068787 are on United States Patent (USP) 5958288 basis, add organic acid and make stablizer, improve the rate of decomposition of hydrogen peroxide, but peroxide decomposition speed is still higher, in usual two weeks, hydrogen peroxide concentration can reduce by more than 10%, cause polishing velocity to decline, polishing fluid is decomposition failure gradually.
In the system of iron and hydrogen peroxide, the static corrosion speed of tungsten is very fast, directly has influence on the yield of production, needs the static corrosion inhibitor adding tungsten further for this reason.
CN98809580.7 and CN200610077360.7 adds the erosion inhibitor adding tungsten in the system of iron at hydrogen peroxide, suppress the corrosion of tungsten.
The problem that above polishing fluid exists a general character is: after polishing, and abrasive and polishing by product more or less can be attached on chip surface, cause surface imperfection, needs to carry out surface cleaning (post-CMP clean) further.Therefore, after polishing, chip surface sticks the number of abrasive and polishing by product, directly has influence on cleaning efficiency and the difficulty of post-CMP clean.
The invention provides a kind of polishing fluid, this polishing fluid has very high tungsten polishing velocity, significantly reduces chip surface defect simultaneously.Significantly improve the yield of product.
Summary of the invention
The technical problem that the present invention solves is the defect overcoming prior art existence, thus provides a kind of new polishing fluid, and this polishing fluid has very high tungsten polishing velocity, significantly reduces chip surface defect simultaneously.
Technical scheme of the present invention is as follows:
A kind of chemical mechanical polishing liquid, it comprises: water, abrasive, silver ions, sulfate ion, superoxide and tensio-active agent.Described abrasive be selected from silicon sol, aerosil, aluminum oxide and cerium oxide one or more.
Described abrasive levels is mass percent 0.1 ~ 10%.Described silver ions comes from the soluble silver salt of Sulfuric acid disilver salt, Silver Nitrate, silver fluoride and/or silver perchlorate, and the weight percent of silver salt is 0.05% ~ 0.3%.Described sulfate ion comes from vitriol, preferably comes from nonmetallic vitriol.Described nonmetal vitriol is ammonium sulfate.Described superoxide is hydrogen peroxide, and content is mass percent 0.1 ~ 5%, is preferably mass percent 1 ~ 2%.
Described tensio-active agent is amphoterics, and this amphoterics is amino acid, preferred Histidine and/or tyrosine.This amphoterics content is 20ppm ~ 500ppm.
Polishing fluid of the present invention is further containing pH adjusting agent, and polishing fluid pH value of the present invention is 0.5 ~ 5.
Positive progressive effect of the present invention is:
The invention provides a kind of new polishing fluid, for chemically machinery polished, significantly improve the polishing velocity of tungsten, significantly reduce chip surface defect simultaneously, improve production efficiency, reduce manufacturing cost, improve the yield of product.
Accompanying drawing explanation
Fig. 1 is the polishing effect figure of embodiment 1, and chip is details in a play not acted out on stage, but told through dialogues photo under an optical microscope, and chip surface can't see abrasive and polishing by product remains;
Fig. 2 is the polishing effect figure of comparative example 8, and chip is details in a play not acted out on stage, but told through dialogues photo under an optical microscope, and white bright spot is that abrasive and polishing by product remain.
Embodiment
Preparation embodiment
Table 1 gives the formula of chemical mechanical polishing liquid embodiment 1 ~ 16 of the present invention and comparative example 1 ~ 9, by component listed in table 1 and content thereof, mixes in deionized water, is transferred to required pH value by pH adjusting agent, can obtain chemical mechanical polishing liquid.
The formula of table 1 chemical mechanical polishing liquid embodiment 1 ~ 16 of the present invention and comparative example 1 ~ 9
Effect example 1
Polishing condition: polishing machine platform is Logitech (Britain) 1PM52 type, polytex polishing pad, 4cm × 4cm square wafer (Wafer), grinding pressure 4psi, grinding stage rotating speed 70 revs/min, grinding head rotation rotating speed 150 revs/min, polishing fluid rate of addition 100ml/ minute.
Table 2 is for the embodiment 1 ~ 4 of tungsten polishing and comparative example 1 ~ 9
Comparative example 1 shows: when only having hydrogen peroxide to exist, and the polishing velocity of tungsten is very low.
Comparative example 2 shows: hydrogen peroxide and Silver Nitrate combination, the polishing velocity of tungsten is very low.
Comparative example 3 ~ 9 shows: under the existence having sulfate radical, and the combination of silver ions, sulfate radical and hydrogen peroxide can significantly improve the polishing velocity of tungsten, but chip surface sticks abrasive and polishing by product is a lot.
Embodiment 1 ~ 4 shows: polishing fluid of the present invention has very high tungsten polishing velocity, significantly reduces chip surface defect (chip surface sticks abrasive and polishing by product) simultaneously.
See accompanying drawing 1, chip is details in a play not acted out on stage, but told through dialogues photo under an optical microscope, and chip surface can't see abrasive and polishing by product remains; See accompanying drawing 2, chip is details in a play not acted out on stage, but told through dialogues photo under an optical microscope, and white bright spot is that abrasive and polishing by product remain.
Claims (14)
1. chemical mechanical polishing liquid is reducing the application in chip surface defect, described chemical mechanical polishing liquid by water, abrasive, silver ions, sulfate ion, superoxide and tensio-active agent composition, and described tensio-active agent is selected from TYR, L-Histidine, L-PROLINE, Serine, L-Trp, 1B, L-arginine, L-threonine, Pidolidone.
2. application according to claim 1, is characterized in that, described abrasive be selected from silicon sol, aerosil, aluminum oxide and cerium oxide one or more.
3. application according to claim 1, is characterized in that, described abrasive levels is mass percent 0.1 ~ 10%.
4. application according to claim 1, is characterized in that, described silver ions comes from the soluble silver salt of Sulfuric acid disilver salt, Silver Nitrate, silver fluoride and/or silver perchlorate.
5. application according to claim 4, wherein, described silver salt weight percent is 0.05% ~ 0.3%.
6. application according to claim 1, is characterized in that, described sulfate ion comes from vitriol.
7. application according to claim 6, is characterized in that, described sulfate ion comes from nonmetallic vitriol.
8. application according to claim 7, is characterized in that, described nonmetal vitriol is ammonium sulfate.
9. application according to claim 1, is characterized in that, described superoxide is hydrogen peroxide.
10. application according to claim 9, is characterized in that, described content of hydrogen peroxide is mass percent 0.1 ~ 5%.
11. application according to claim 10, is characterized in that, described content of hydrogen peroxide is mass percent 1 ~ 2%.
12. application according to claim 1, is characterized in that, described surfactant content is 20ppm ~ 500ppm.
13. 1 kinds of chemical mechanical polishing liquids are reducing the application in chip surface defect, and it is characterized in that, described chemical mechanical polishing liquid is by water, abrasive, silver ions, sulfate ion, superoxide, tensio-active agent and pH adjusting agent form, and described tensio-active agent is selected from TYR, L-Histidine, L-PROLINE, Serine, L-Trp, 1B, L-arginine, L-threonine, Pidolidone.
14. application according to claim 13, is characterized in that, the pH value of described chemical mechanical polishing liquid is 0.5 ~ 5.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010564124.4A CN102477258B (en) | 2010-11-26 | 2010-11-26 | Chemically mechanical polishing liquid |
| PCT/CN2011/001766 WO2012068775A1 (en) | 2010-11-26 | 2011-10-24 | Chemical mechanical polishing slurry |
| TW100141939A TW201221600A (en) | 2010-11-26 | 2011-11-17 | Chemical mechanical polishing slurry |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010564124.4A CN102477258B (en) | 2010-11-26 | 2010-11-26 | Chemically mechanical polishing liquid |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102477258A CN102477258A (en) | 2012-05-30 |
| CN102477258B true CN102477258B (en) | 2015-05-27 |
Family
ID=46090042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010564124.4A Active CN102477258B (en) | 2010-11-26 | 2010-11-26 | Chemically mechanical polishing liquid |
Country Status (3)
| Country | Link |
|---|---|
| CN (1) | CN102477258B (en) |
| TW (1) | TW201221600A (en) |
| WO (1) | WO2012068775A1 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102533121B (en) * | 2010-12-27 | 2016-01-27 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid of polish tungsten |
| CN104745084B (en) * | 2013-12-25 | 2018-09-14 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid and application method for aluminium |
| US10676647B1 (en) * | 2018-12-31 | 2020-06-09 | Cabot Microelectronics Corporation | Composition for tungsten CMP |
| CN113334242B (en) * | 2021-06-24 | 2022-11-04 | 大连理工大学 | Processing device and process for diamond wafer ultraviolet light assisted chemical mechanical polishing |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0984049A1 (en) * | 1998-08-31 | 2000-03-08 | Eternal Chemical Co., Ltd. | Chemical mechanical abrasive composition for use in semiconductor processing |
| CN1288927A (en) * | 1999-09-21 | 2001-03-28 | 长兴化学工业股份有限公司 | Composition ground in chemical machine |
| SG94338A1 (en) * | 1999-09-20 | 2003-02-18 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
| EP1069168B1 (en) * | 1999-07-16 | 2005-01-26 | Eternal Chemical Co., Ltd. | Chemical mechanical abrasive composition for use in semiconductor processing |
| CN1721493A (en) * | 2004-02-23 | 2006-01-18 | Cmp罗姆和哈斯电子材料控股公司 | Multiple process polishing solution for chemical mechanical planarization |
| CN1735670A (en) * | 2003-01-03 | 2006-02-15 | 气体产品及化学制品公司 | Composition and method used for chemical mechanical planarization of metals |
| WO2006095851A1 (en) * | 2005-03-11 | 2006-09-14 | Hitachi Chemical Co., Ltd. | Copper surface treatment method and copper |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4959113C1 (en) * | 1989-07-31 | 2001-03-13 | Rodel Inc | Method and composition for polishing metal surfaces |
| US5225034A (en) * | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| JP2007535118A (en) * | 2003-07-09 | 2007-11-29 | ダイネア ケミカルズ オイ | Non-polymeric organic particles for use in chemical mechanical planarization |
| US7161247B2 (en) * | 2004-07-28 | 2007-01-09 | Cabot Microelectronics Corporation | Polishing composition for noble metals |
| KR100948814B1 (en) * | 2006-09-27 | 2010-03-24 | 테크노세미켐 주식회사 | A Slurry Composition for Forming Tungsten Line and Method for Manufacturing Semiconductor Device Using the Same |
| US20090032765A1 (en) * | 2007-08-03 | 2009-02-05 | Jinru Bian | Selective barrier polishing slurry |
| CN101649162A (en) * | 2008-08-15 | 2010-02-17 | 安集微电子（上海）有限公司 | Polishing solution used for chemical mechanical grounding |
-
2010
- 2010-11-26 CN CN201010564124.4A patent/CN102477258B/en active Active
-
2011
- 2011-10-24 WO PCT/CN2011/001766 patent/WO2012068775A1/en active Application Filing
- 2011-11-17 TW TW100141939A patent/TW201221600A/en not_active IP Right Cessation
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0984049A1 (en) * | 1998-08-31 | 2000-03-08 | Eternal Chemical Co., Ltd. | Chemical mechanical abrasive composition for use in semiconductor processing |
| EP1069168B1 (en) * | 1999-07-16 | 2005-01-26 | Eternal Chemical Co., Ltd. | Chemical mechanical abrasive composition for use in semiconductor processing |
| SG94338A1 (en) * | 1999-09-20 | 2003-02-18 | Eternal Chemical Co Ltd | Chemical mechanical abrasive composition for use in semiconductor processing |
| CN1288927A (en) * | 1999-09-21 | 2001-03-28 | 长兴化学工业股份有限公司 | Composition ground in chemical machine |
| CN1735670A (en) * | 2003-01-03 | 2006-02-15 | 气体产品及化学制品公司 | Composition and method used for chemical mechanical planarization of metals |
| CN1721493A (en) * | 2004-02-23 | 2006-01-18 | Cmp罗姆和哈斯电子材料控股公司 | Multiple process polishing solution for chemical mechanical planarization |
| WO2006095851A1 (en) * | 2005-03-11 | 2006-09-14 | Hitachi Chemical Co., Ltd. | Copper surface treatment method and copper |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2012068775A1 (en) | 2012-05-31 |
| TWI435923B (en) | 2014-05-01 |
| CN102477258A (en) | 2012-05-30 |
| TW201221600A (en) | 2012-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1568746B1 (en) | Polishing composition and polishing method | |
| JP3692067B2 (en) | Polishing slurry for copper CMP and method of manufacturing semiconductor device using the same | |
| KR100302671B1 (en) | Chemical mechanical polishing composition and process | |
| TWI580766B (en) | Metal Chemical Mechanical Polishing Slurry and Its Application | |
| WO2017114301A1 (en) | Chemical and mechanical polishing slurry for metal | |
| KR20050086592A (en) | Copper chemical mechanical polishing solutions using sulfonated amphiprotic agents | |
| KR20030059070A (en) | Ready-to-use stable chemical-mechanical polishing slurries | |
| TW201422741A (en) | Chemical mechanical polishing slurry and application thereof | |
| CN102477258B (en) | Chemically mechanical polishing liquid | |
| CN103865400A (en) | Application of organic phosphate surfactant in self-stopping polishing | |
| CN102533121B (en) | A kind of chemical mechanical polishing liquid of polish tungsten | |
| CN102051126B (en) | Polishing solution for tungsten chemical mechanical polishing | |
| CN102093816B (en) | Chemical mechanical polishing liquid | |
| CN102051129B (en) | Chemical mechanical polishing solution | |
| JP2017061612A (en) | Composition for chemical mechanical polishing and chemical mechanical polishing method | |
| CN101955732B (en) | A kind of chemical mechanical polishing liquid | |
| CN102373012B (en) | Chemical-mechanical polishing solution | |
| CN108250976A (en) | A kind of chemical mechanical polishing liquid | |
| TWI838447B (en) | Chemical-mechanical polishing slurry for polishing tungsten | |
| CN113122141B (en) | Chemical mechanical polishing solution | |
| CN102850937A (en) | Chemical mechanical polishing (CMP) liquid | |
| CN102344760B (en) | Chemically mechanical polishing agent | |
| CN102816529A (en) | Tungsten chemical-mechanical polishing solution being beneficial for cleaning after polishing | |
| CN102834476B (en) | A kind of chemical mechanical polishing liquid | |
| CN102452036B (en) | A kind of tungsten CMP method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |