CN1288927A - Composition ground in chemical machine - Google Patents
Composition ground in chemical machine Download PDFInfo
- Publication number
- CN1288927A CN1288927A CN 99119615 CN99119615A CN1288927A CN 1288927 A CN1288927 A CN 1288927A CN 99119615 CN99119615 CN 99119615 CN 99119615 A CN99119615 A CN 99119615A CN 1288927 A CN1288927 A CN 1288927A
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- weight
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- composition
- abrasive grains
- mixture
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- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides a chemical mechanical grinding composite for processing semi-conductor, it contains (wt%) 80-99.5% of water medium, 0.5-15% of grinding particles and 0.01-5% of barrier grinding accelerating agent, in which said grinding accelerating agent is of inorganic salt type composite selected and formed from carbonate, nitrate, phosphate, phosphite, sulfate and their mixture. Said invented chemical mechanical grinding composite can further contains oxidanat.
Description
The invention relates to a kind of Chemicomechanically grinding composition and method.Abrasive composition of the present invention can effectively be applied to the grinding on semiconductor wafer (wafer) surface.
Cmp technology (be called for short CMP) is the planarization that the difficulty that causes little shadow processing to be gone up focusing on because of plated film height difference when solving unicircuit (IC) and make develops.The cmp technology at first is applied in the manufacturing of 0.5 micron element on a small quantity, and along with dwindling of size, the number of plies that cmp is used is also more and more.To 0.25 micron epoch, cmp has become main flow and has been necessary planarization.Generally speaking, being used to make the Ginding process of metallic circuit, is that semiconductor wafer is placed on the spin finishing platform of being furnished with grinding head, uses the grinding milk that comprises polishing particles and oxygenant in wafer surface, grinds effect to promote.
In IC processing, Ta or TaN film often are used to improve plain conductor, and for example copper is to the tackiness of insulating layer of silicon oxide.In addition, Ta and TaN film also can be used as the metal of barrier film (barrier film).In theory, Ta and TaN remove speed should with Cu to remove speed close, yet the Ta metal is the metal with high resistance chemical because it is difficult for oxidation, in copper processing, the grinding of Ta metal is to be difficult to most in the technology overcome always.
United States Patent (USP) 5225034 discloses a kind of chemical and mechanical grinding fluid, and it comprises AgNO
3, the solid abrasive material, be selected from H
2O
2, HOCl, KOCl, KMgO
4Or CH
3The oxygenant of COOOH.This grinding milk is the copper layer that is used on the grinding semiconductor chip, to make the copper cash on the wafer.
United States Patent (USP) 5209816 discloses a kind of chemical and mechanical grinding fluid that uses will contain the method for Al or Ti metal level polishing, and its grinding milk still comprises the H of about 0.1-20 volume % except that comprising the solid abrasive material
3PO
4H with about 1-30 volume %
2O
2
United States Patent (USP) 4959113 is the method that makes the use abrasive composition with the surface, burnished metal about a kind of.This water-based abrasive composition comprises water, abrasive (CeO for example
2, Al
2O
3, ZrO
2, TiO
2, SiO
2, SiC, SnO
2And TiC), with a kind of salt, the negatively charged ion of the metallic cation of this salt containing element periodictable IIA, IIIA, IVA or IVB family and chlorion, bromide anion, iodide ion, nitrate radical, sulfate radical, phosphate radical or mistake chlorate anions.This United States Patent (USP) also teaching uses hydrochloric acid, nitric acid, phosphoric acid or sulfuric acid so that its water-based abrasive composition is deployed into pH=1-6.
United States Patent (USP) 5391258 discloses a kind of abrasive composition that is used to polish the mixture of siliceous, silica or silicate, and it still comprises hydrogen peroxide and Potassium Hydrogen Phthalate except that comprising abrasive grains.
United States Patent (USP) 5114437 is the polishing composition that is used for the polished aluminum base material about a kind of, and it comprises average particle size particle size between the aluminum oxide polishing agent of 0.2 to 5 μ m and be selected from the polishing promotor of chromium nitrate (III), lanthanum nitrate, cerous nitrate (III) ammonium or neodymium nitrate.
United States Patent (USP) 5084071 is that its employed polishing slurries comprise aluminum oxide, abrasive grains (for example, the SiO less than 1 weight % about a kind of method of chemical machinery polishing slurries so that the electronic component base material is polished of using
2, CeO
2, SiC, Si
3N
4Or Fe
2O
3), as the transition metal chelating salt (for example, EDTA iron ammonium) of mill efficiency promotor, and for the solvent of this salt use.
United States Patent (USP) 5336542 discloses a kind of polishing composition, and it comprises alumina abrasive particles, and one selects from the polyamino carboxylic acid (for example, EDTA) or the sequestrant of its sodium or sylvite.This polishing composition can further comprise boehmite or aluminium salt.
United States Patent (USP) 5340370 discloses a kind of slurries that are used for the chemical machinery polishing of tungsten for example or tungsten nitride film, and it comprises hydroferricyanic acid potassium oxygenant, abrasive and water for the film use, and wherein these slurries have 2 to 4 pH value.
United States Patent (USP) 5516346 discloses a kind of slurries that are used for chemical machinery polishing titanium film, and it comprises concentration and is enough to Potassium monofluoride and abrasive (for example silicon oxide) with this titanium film complexing (complex), and wherein these slurries have and are lower than 8 pH value.
WO96/16436 discloses a kind of chemical machinery polishing slurries, and it comprises the water-based interfacial agent suspension of the abrasive grains, molysite oxygenant and propylene glycol and the methyl p-hydroxybenzoate that have less than 0.400 micron median size.
United States Patent (USP) 5527423 discloses a kind of slurries that are used for chemical machinery polishing metal level, its comprise oxidized metal complex compound (for example iron nitrate) oxygenant, contain at least 50% γ-phase fused alumina particles, stretch the nonionic interfacial activity additive of alkyl oxide with for example poly-alkylsiloxane or polyoxygenated.
In the semiconductor machining skill, still need seek more economical and have more the Chemicomechanically grinding composition of usefulness.
The present invention system provides a kind of Chemicomechanically grinding composition that is used for semiconductor machining, and it comprises the aqueous medium of 80-99.5 weight %; 0.5-15 the abrasive grains of weight %; And the blocking layer (barrier layer) of 0.01-5 weight % grinds promotor, wherein this grinding promotor be comprise be selected from by carbonate, nitrate, phosphoric acid salt, phosphite, vitriol, and composition thereof the inorganic salts of the group formed.The blocking layer in the mixture of metal level, blocking layer and dielectric layer is contained on the preferable grinding wafers surface that is used for of Chemicomechanically grinding composition of the present invention.Chemicomechanically grinding composition of the present invention can further comprise oxygenant.
The present invention system provides a kind of Chemicomechanically grinding composition that is used for semiconductor machining, and it comprises the aqueous medium of 80-99.5 weight %; 0.5-15 weight % is preferably 0.5-10 weight %, is more preferred from the abrasive grains of 0.5-5 weight %; And 0.01-5 weight %, promotor is ground on the blocking layer that is preferably 0.03-3 weight %, wherein this grinding promotor be comprise be selected from by carbonate, nitrate, phosphoric acid salt, phosphite, vitriol, and composition thereof the inorganic salts of the group formed.
According to the present invention, adding inorganic salts in abrasive composition can effectively promote on the wafer surface, contains the grinding rate on the blocking layer in the mixture of metal level (for example copper, tungsten or aluminium), blocking layer (for example titanium, titanium nitride, tantalum or tantalum nitride) and dielectric layer.Inorganic salts used in the present invention is preferably the non-metallic inorganic salt class, and it for example can be selected from volatile salt, ammonium nitrate, ammonium phosphate, ammonium phosphite, ammonium sulfate or its mixture.Chemicomechanically grinding composition of the present invention can further comprise oxygenant, with the grinding rate on further promotion blocking layer.Discovery is not only added under the situation of oxygenant adding inorganic salts, and abrasive composition also can't effectively promote the grinding rate on blocking layer.
According to the present invention, the employed abrasive grains of abrasive composition can be general commercially available person, for example SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2, Si
3N
4Or its mixture.These abrasive grains have advantages such as higher degree, high-specific surface area and narrow size distribution, therefore are applicable in the grinding and polishing composition as abrasive grains.
Chemicomechanically grinding composition of the present invention can comprise, and for example, water is as medium.In preparation process, water can be made so that the grinding and polishing composition is the slurries shape, the deionized water that preferable use is known.
Chemicomechanically grinding composition of the present invention still can comprise the known but unlikely composition that abrasive composition effect of the present invention is caused disadvantageous effect in other cmp skill.For example in copper processing, can comprise and know the employed benzotriazole of abrasive composition and/or its derivative, to suppress the quick corrosion of copper.
According to the present invention, when using 80-99.5 weight % deionized water as aqueous medium, the solids content of slurries is 0.5-15 weight %, is preferably 0.5-10 weight %, is more preferred from 0.5-5 weight %.Then additive as indicated above is imported in the high purity slurries of gained, add again acid or alkali with the pH value of control slurries between required scope.
Following examples will the present invention is further illustrated, is not in order to limiting the scope of the invention, and modification and change that any personage who is familiar with this skill can reach easily all are covered by in the scope of the present invention.
Grind test
A. instrument: IPEC/Westech 472
B. condition: pressure: 4psi
Back pressure: 0.5psi
Temperature: 25 ℃
The speed of mainshaft: 55rpm
Platen rotating speed: 50rpm
Base pattern: IC1400
Slurry flow rate: 150 ml/min
C. wafer: copper film and tantalum nitride membrane available from Silicon ValleyMicroelectinics.Inc., are to deposit 0.5 micron ± 5% tantalum nitride membrane on 6 inches silicon wafers with the PVD technology.
D. slurries: the slurries and the 30%H that get gained
2O
2Evenly test after the stirring with 14: 1 volume ratios, or not add H
2O
2Slurries directly grind test.
Grind testing process:
Before and after grinding, must measure the thickness of film with elcometer.Metallic membrane measures the sheet resistance of film with four-point probe, convert through following formula the thickness of film:
T * R=specific resistance wherein T is film thickness (), and R is sheet resistance (Ω/cm
2), for various metallic films, (Ω/cm) is a constant to specific resistance.
The present invention adopts the RS 75 type machines of KLA-Tencor company to measure the thickness of metal level.The measuring method system of polishing speed records metal level thickness T with above-mentioned RS 75 type machines earlier
1, grind 1 minute with the prepared slurries of following embodiment respectively after, the Evergreen Model 10X type machine clean wafers with solid-state instrument company (Solid State Equipment Corporation) afterwards, dries up wafer.Measure the thickness T of metal level again with RS 75 type machines
2With T
1-T
2Be the polishing speed of metal level.
Embodiment 1
Prepare grinding milk with colloidal silica as abrasive grains.Slurries are composed as follows:
Colloidal silica content: 1.0 weight %
All the other content are for adjusting acid or the alkali and the deionized water of pH value.
The grinding rate of gained slurries is as shown in table 1.
Embodiment 2
Prepare slurries with same way as described in embodiment 1, it is composed as follows:
Colloidal silica content: 1.0 weight %
Volatile salt content: 1.0 weight %
All the other content are for adjusting acid or the alkali and the deionized water of pH value.
The grinding rate of gained slurries is as shown in table 1.
Embodiment 3
Prepare slurries with same way as described in embodiment 1, it is composed as follows:
Colloidal silica content: 1.0 weight %
Ammonium nitrate content: 1.0 weight %
All the other content are for adjusting acid or the alkali and the deionized water of pH value.
The grinding rate of gained slurries is as shown in table 1.
Embodiment 4
Prepare slurries with same way as described in embodiment 1, it is composed as follows:
Colloidal silica content: 1.0 weight %
(NH
4) H
2PO
4Content: 1.0 weight %
All the other content are for adjusting acid or the alkali and the deionized water of pH value.
The grinding rate of gained slurries is as shown in table 1.
Embodiment 5
Prepare slurries with same way as described in embodiment 1, it is composed as follows:
Colloidal silica content: 1.0 weight %
Ammonium sulfate content: 1.0 weight %
All the other content are for adjusting acid or the alkali and the deionized water of pH value.
The grinding rate of gained slurries is as shown in table 1.
Embodiment 6
Prepare slurries with same way as described in embodiment 1, it is composed as follows:
Colloidal silica content: 1.0 weight %
Ammonium sulfate content: 1.0 weight %
Benzotriazole content: 0.1 weight %
All the other content are for adjusting acid or the alkali and the deionized water of pH value.
The grinding rate of gained slurries is as shown in table 1.
Embodiment 7
Prepare slurries with same way as described in embodiment 1, it is composed as follows:
Colloidal silica content: 5.0 weight %
Ammonium sulfate content: 1.0 weight %
Benzotriazole content: 0.1 weight %
All the other content are acid or the alkali and the deionized water of pH value.
The grinding rate of gained slurries is as shown in table 1.
Embodiment 8
Prepare slurries with same way as described in embodiment 1, it is composed as follows:
Colloidal silica content: 0.5 weight %
Ammonium sulfate content: 0.5 weight %
All the other content are acid or the alkali and the deionized water of pH value.
The grinding rate of gained slurries is as shown in table 1.
Embodiment 9
Prepare slurries with same way as described in embodiment 1, it is composed as follows:
Colloidal silica content: 0.5 weight %
Ammonium sulfate content: 0.5 weight %
All the other content are acid or the alkali and the deionized water of pH value.
The grinding rate of gained slurries is as shown in table 1.
Table 1
Claims (20)
1, a kind ofly be used for containing on the semiconductor wafer surface metal level, blocking layer, and the Chemicomechanically grinding composition on the blocking layer of the mixture of dielectric layer, it comprises: the aqueous medium of 80-99.5 weight %; 0.5-15 the abrasive grains of weight %; And the grinding promotor of 0.01-5.0 weight %, this grinding promotor be comprise be selected from by carbonate, nitrate, phosphoric acid salt, phosphite, vitriol, and composition thereof the inorganic salts of the group formed.
2, composition according to claim 1, wherein this abrasive grains system is selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2, Si
3N
4Or its mixture.
3, composition according to claim 1, it is the abrasive grains that comprises 0.5-10 weight %.
4, composition according to claim 3, it is the abrasive grains that comprises 0.5-5.0 weight %.
5, composition according to claim 1, it is this grinding promotor that comprises 0.03-3.0 weight %.
6, composition according to claim 5, it is this grinding promotor that comprises 0.03-1.0 weight %.
7, composition according to claim 1, it further comprises oxygenant.
8, composition according to claim 1, wherein this inorganic salts is non-metallic salt.
9, composition according to claim 8, wherein this nonmetal salt is to be selected from volatile salt, ammonium nitrate, ammonium phosphate, ammonium phosphite, ammonium sulfate or its mixture.
10, composition according to claim 1, it further comprises triazole compounds and/or its derivative.
11, a kind ofly be used for containing on the semiconductor wafer surface metal level, blocking layer, and the method on the blocking layer of the mixture of dielectric layer, it is included in uses a Chemicomechanically grinding composition on the wafer surface, said composition comprises: the aqueous medium of 80-99.5 weight %; 0.5-15 the abrasive grains of weight %; And the grinding promotor of 0.01-5.0 weight %, this grinding promotor be comprise be selected from by carbonate, nitrate, phosphoric acid salt, phosphite, vitriol, and composition thereof the inorganic salts of the group formed.
12, method according to claim 11, wherein this abrasive grains system is selected from SiO
2, Al
2O
3, ZrO
2, CeO
2, SiC, Fe
2O
3, TiO
2, Si
3N
4Or its mixture.
13, method according to claim 11, it is the abrasive grains that comprises 0.5-10 weight %.
14, method according to claim 13, it is the abrasive grains that comprises 0.5-5.0 weight %.
15, method according to claim 11, it is the grinding promotor that comprises 0.03-3.0 weight %.
16, method according to claim 15, it is the grinding promotor that comprises 0.03-1.0 weight %.
17, method according to claim 11, it further comprises oxygenant.
18, method according to claim 11, wherein this inorganic salts is non-metallic salt.
19, method according to claim 18, wherein this nonmetal salt is to be selected from volatile salt, ammonium nitrate, ammonium phosphate, ammonium phosphite, ammonium sulfate or its mixture.
20, method according to claim 11, it further comprises triazole compounds and/or its derivative.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99119615 CN1288927A (en) | 1999-09-21 | 1999-09-21 | Composition ground in chemical machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 99119615 CN1288927A (en) | 1999-09-21 | 1999-09-21 | Composition ground in chemical machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1288927A true CN1288927A (en) | 2001-03-28 |
Family
ID=5280992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 99119615 Pending CN1288927A (en) | 1999-09-21 | 1999-09-21 | Composition ground in chemical machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1288927A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101173160A (en) * | 2002-08-07 | 2008-05-07 | 花王株式会社 | Roll-off reducing agent |
| CN1746253B (en) * | 2004-09-09 | 2010-06-16 | 福吉米株式会社 | Polishing composition and polishing method using the same |
| CN1576339B (en) * | 2003-07-03 | 2012-03-28 | 福吉米株式会社 | Polishing composition |
| CN102477258A (en) * | 2010-11-26 | 2012-05-30 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid |
| CN102533121A (en) * | 2010-12-27 | 2012-07-04 | 安集微电子（上海）有限公司 | Chemically mechanical polishing solution for polishing tungsten |
| CN103897602A (en) * | 2012-12-24 | 2014-07-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid and polishing method |
| CN113747969A (en) * | 2019-02-12 | 2021-12-03 | 智能材料印刷有限公司 | Mechanochemical method |
-
1999
- 1999-09-21 CN CN 99119615 patent/CN1288927A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101173160A (en) * | 2002-08-07 | 2008-05-07 | 花王株式会社 | Roll-off reducing agent |
| CN1576339B (en) * | 2003-07-03 | 2012-03-28 | 福吉米株式会社 | Polishing composition |
| CN1746253B (en) * | 2004-09-09 | 2010-06-16 | 福吉米株式会社 | Polishing composition and polishing method using the same |
| CN102477258A (en) * | 2010-11-26 | 2012-05-30 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid |
| CN102477258B (en) * | 2010-11-26 | 2015-05-27 | 安集微电子（上海）有限公司 | Chemically mechanical polishing liquid |
| CN102533121A (en) * | 2010-12-27 | 2012-07-04 | 安集微电子（上海）有限公司 | Chemically mechanical polishing solution for polishing tungsten |
| CN103897602A (en) * | 2012-12-24 | 2014-07-02 | 安集微电子（上海）有限公司 | Chemical mechanical polishing liquid and polishing method |
| CN103897602B (en) * | 2012-12-24 | 2017-10-13 | 安集微电子（上海）有限公司 | A kind of chemical mechanical polishing liquid and polishing method |
| CN113747969A (en) * | 2019-02-12 | 2021-12-03 | 智能材料印刷有限公司 | Mechanochemical method |
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