JPH06333895A - Brush cleaning method in brush scrubbing process - Google Patents

Brush cleaning method in brush scrubbing process

Info

Publication number
JPH06333895A
JPH06333895A JP5140044A JP14004493A JPH06333895A JP H06333895 A JPH06333895 A JP H06333895A JP 5140044 A JP5140044 A JP 5140044A JP 14004493 A JP14004493 A JP 14004493A JP H06333895 A JPH06333895 A JP H06333895A
Authority
JP
Japan
Prior art keywords
brush
cleaning
cleaning tank
wafer
cleaning liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5140044A
Other languages
Japanese (ja)
Inventor
Toshiyuki Yamazaki
利幸 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP5140044A priority Critical patent/JPH06333895A/en
Publication of JPH06333895A publication Critical patent/JPH06333895A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B1/00Cleaning by methods involving the use of tools
    • B08B1/50Cleaning by methods involving the use of tools involving cleaning of the cleaning members
    • B08B1/52Cleaning by methods involving the use of tools involving cleaning of the cleaning members using fluids

Landscapes

  • Cleaning In General (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE:To prevent a wafer from being inversely contaminated by a brush again by a method wherein all detergent is discharged from a brush cleaning tank after a brush is cleaned, and new detergent is supplied. CONSTITUTION:A rotating brush 1 is pressed against the surface of a semiconductor wafer 31 to clean it as detergent 3 is sprayed on the rotating brush 1. Thereafter, the brush 1 is wetted with detergent 3 in the brush cleaning tank 2 to be cleaned as it is rotated. After detergent 3 is discharged from the brush cleaning tank 2, and new cleaning liquid 3 is fed into the brush cleaning tank 2. By this setup, particles attached to a brush by cleaning a wafer are discharged into detergent in a brush cleaning tank. Detergent in a brush cleaning tank is all replaced after a brush cleaning operation is finished, so that particles are not left in a brush cleaning tank, and detergent is kept clean in a brush cleaning tank.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ブラシスクラブ洗浄工
程におけるブラシの洗浄方法に関し、特にはウエハ表面
のブラシスクラブ洗浄を繰り返し行う際に、上記ブラシ
を洗浄する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a brush cleaning method in a brush scrub cleaning process, and more particularly to a method for cleaning the brush when repeatedly performing brush scrub cleaning on a wafer surface.

【0002】[0002]

【従来の技術】半導体装置の微細化が進むにつれて、ウ
エハ表面に付着した金属不純物、有機汚染物質、パーテ
ィクル等によるマイクロコンタミネーションが製品の歩
留りや信頼性に影響を及ぼすことがますます大きくなっ
ている。このため、半導体装置の製造工程においては、
ウエハ表面をいかに清浄に保つかが重要になっている。
2. Description of the Related Art As semiconductor devices are miniaturized, microcontamination caused by metal impurities, organic pollutants, particles, etc. adhering to the wafer surface has an increasing influence on the yield and reliability of products. There is. Therefore, in the manufacturing process of the semiconductor device,
It is important to keep the wafer surface clean.

【0003】現在、ウエハ表面の清浄化にはさまざまな
方法が用いられているが、その中の一つにブラシスクラ
ブ洗浄がある。ブラシスクラブ洗浄は、回転するブラシ
に洗浄液をかけながら、そのブラシをウエハの表面に押
し当てることによって、ウエハ表面に付着したパーティ
クル等を除去する方法である。
At present, various methods are used for cleaning the wafer surface, and one of them is brush scrub cleaning. Brush scrub cleaning is a method of removing particles and the like adhering to the wafer surface by pressing the rotating brush against the surface of the wafer while applying the cleaning liquid to the rotating brush.

【0004】以下に、上記ブラシスクラブ洗浄のシーケ
ンスを図2に基づいて説明する。上記洗浄には、図2
(1)に示すように、回転するブラシ201とこのブラ
シを洗浄するブラシ洗浄槽202とを備えたブラシスク
ラバーを用いる。先ず、ブラシスクラブ洗浄を行うウエ
ハ301を、ブラシ洗浄槽202の外に配置したステー
ジ401に載置する。そして、回転するブラシ201
を、ブラシ洗浄槽202中の洗浄液203から引き上げ
てウエハ301の表面に押し当てる。
The brush scrub cleaning sequence will be described below with reference to FIG. For the above cleaning,
As shown in (1), a brush scrubber provided with a rotating brush 201 and a brush cleaning tank 202 for cleaning this brush is used. First, the wafer 301 to be subjected to the brush scrub cleaning is placed on the stage 401 arranged outside the brush cleaning tank 202. And the rotating brush 201
Is pulled up from the cleaning liquid 203 in the brush cleaning tank 202 and pressed against the surface of the wafer 301.

【0005】この際、ブラシ201には、このブラシ2
01の上方に設けた供給ノズル204から洗浄液203
を常時供給する。これによって、ウエハ301の表面は
洗浄液203とブラシ201の回転によって洗浄され
る。
At this time, the brush 201 has the brush 2
01 from the supply nozzle 204 provided above the cleaning liquid 203
Is always supplied. As a result, the surface of the wafer 301 is cleaned by rotating the cleaning liquid 203 and the brush 201.

【0006】次いで、上記工程で洗浄を行ったウエハ3
01と次に洗浄を行うウエハとの交換及び、洗浄を行っ
たウエハ301の乾燥を行う。この工程では、図2
(2)に示すように、回転するブラシ201をブラシ洗
浄槽202に移動し、ブラシ201をブラシ洗浄槽20
2中の洗浄液203につけてぬらした状態にしておく。
この際、ブラシ201の上方に固設した供給ノズル20
4から、洗浄液203を常にブラシ201に供給する。
これは、ウエハ301の乾燥及び運搬中にブラシ201
の清浄度を損なわないようにするためである。また、ブ
ラシ洗浄槽202中の洗浄液203は、排水口206か
らオーバーフローして排水される。
Next, the wafer 3 cleaned in the above process
01 and the next wafer to be washed are replaced, and the washed wafer 301 is dried. In this step, as shown in FIG.
As shown in (2), the rotating brush 201 is moved to the brush cleaning tank 202, and the brush 201 is moved to the brush cleaning tank 20.
The cleaning liquid 203 in 2 is soaked in a wet state.
At this time, the supply nozzle 20 fixed above the brush 201
4, the cleaning liquid 203 is constantly supplied to the brush 201.
This is the brush 201 during the drying and transport of the wafer 301.
This is so as not to impair the cleanliness of. Further, the cleaning liquid 203 in the brush cleaning tank 202 overflows from the drain port 206 and is drained.

【0007】そして、次に洗浄を行うウエハ301がス
テージ401に載置された後、図2(1)に戻って、ス
テージ401に載置されたウエハ301のブラシスクラ
ブ洗浄を行い、以後上記工程を繰り返して行う。
Then, after the wafer 301 to be cleaned next is mounted on the stage 401, returning to FIG. 2A, the wafer 301 mounted on the stage 401 is cleaned by brush scrubbing. Repeat.

【0008】[0008]

【発明が解決しようとする課題】しかし、上記のブラシ
スクラブ洗浄方法には、以下のような課題があった。す
なわち、上記方法においては、図2(1)で示したウエ
ハ301の洗浄によって、ウエハ301表面に付着した
パーティクルが、洗浄液203によって洗い流されるか
あるいはブラシ201に付着する。そして、図2(2)
で示したブラシ201の洗浄によって、ブラシ201に
付着したパーティクルは、ブラシ洗浄槽202中の洗浄
液203に排出される。ところが、ブラシ洗浄槽202
中の洗浄液203は、排水口206からオーバーフロー
して排水されるだけである。このため、ブラシ201か
ら洗浄液203に排出されたパーティクルのうち、洗浄
液203に対して浮上するパーティクルは排水口206
から除去されるが、洗浄液203中に浮遊するパーティ
クル及び沈澱するパーティクルはブラシ洗浄槽202内
から除去されずに残る。このため、ブラシスクラブ洗浄
が繰り返されるにしたがって、上記パーティクルがブラ
シ洗浄槽202中に蓄積される。上記のようにパーティ
クルが残存するブラシ洗浄槽202中の洗浄液203に
ブラシ201を浸すと、パーティクルがブラシ201に
再付着し、ブラシ201からウエハ301への逆汚染が
起こる。
However, the above brush scrub cleaning method has the following problems. That is, in the above method, by cleaning the wafer 301 shown in FIG. 2A, the particles adhered to the surface of the wafer 301 are washed away by the cleaning liquid 203 or adhered to the brush 201. And FIG. 2 (2)
Particles attached to the brush 201 by the cleaning of the brush 201 indicated by are discharged to the cleaning liquid 203 in the brush cleaning tank 202. However, the brush cleaning tank 202
The cleaning solution 203 therein overflows from the drain port 206 and is drained. Therefore, among the particles discharged from the brush 201 to the cleaning liquid 203, the particles floating above the cleaning liquid 203 are the drain holes 206.
However, the particles floating in the cleaning liquid 203 and the particles that settle remain in the brush cleaning tank 202 without being removed. Therefore, as the brush scrub cleaning is repeated, the particles are accumulated in the brush cleaning tank 202. When the brush 201 is immersed in the cleaning liquid 203 in the brush cleaning tank 202 in which the particles remain as described above, the particles are reattached to the brush 201, and the back contamination from the brush 201 to the wafer 301 occurs.

【0009】そこで、本発明では上記の課題を解決する
ために、ブラシスクラブ洗浄の繰り返し工程中にブラシ
201を洗浄する方法を提供し、半導体装置の歩留りと
信頼性の向上を図ることを目的とする。
In order to solve the above problems, the present invention provides a method of cleaning the brush 201 during repeated steps of brush scrubbing, which aims to improve the yield and reliability of semiconductor devices. To do.

【0010】[0010]

【課題を解決するための手段】上記の目的を達成するた
めの本発明では、ブラシスクラブ洗浄工程において、以
下のようにブラシを洗浄する。先ず、回転するブラシに
洗浄液をかけながら半導体ウエハの表面に当該ブラシを
押し当てて当該半導体ウエハの表面を洗浄した後に、上
記ブラシを回転させながらブラシ洗浄槽の中の洗浄液に
つけることによって当該ブラシを洗浄する。そして、上
記ブラシ洗浄槽の中の洗浄液を排水し、その後、当該ブ
ラシ洗浄槽の中に洗浄液を給液する。
According to the present invention for achieving the above object, in the brush scrub cleaning step, the brush is cleaned as follows. First, while cleaning liquid is applied to the rotating brush, the brush is pressed against the surface of the semiconductor wafer to clean the surface of the semiconductor wafer, and then the brush is rotated while being applied to the cleaning liquid in the brush cleaning tank. To wash. Then, the cleaning liquid in the brush cleaning tank is drained, and then the cleaning liquid is supplied into the brush cleaning tank.

【0011】[0011]

【作用】ウエハの表面の洗浄によってブラシに付着した
パーティクルは、ブラシ洗浄槽中の洗浄液に排出され
る。そして、ブラシ洗浄槽中の洗浄液は、ブラシの洗浄
が終了した後に全て交換するので、上記パーティクルも
ブラシ洗浄槽中に残らず、ブラシ洗浄槽の中の洗浄液は
清浄に保たれる。
The particles adhered to the brush by cleaning the surface of the wafer are discharged to the cleaning liquid in the brush cleaning tank. Since the cleaning liquid in the brush cleaning tank is all replaced after the cleaning of the brush is completed, the particles do not remain in the brush cleaning tank, and the cleaning liquid in the brush cleaning tank is kept clean.

【0012】[0012]

【実施例】以下、本発明の実施例を図面に基づいて説明
する。図1は、実施例のブラシスクラブ洗浄工程におけ
るブラシ洗浄のシーケンスの一例を示す図である。実施
例で用いるブラシスクラブ装置は、図1(1)に示すよ
うに回転するドラム状のブラシ1とブラシ洗浄槽2とを
備えている。ブラシ1の上方には、ブラシ1に洗浄液3
を供給する供給ノズル4が固設されている。そして、供
給ノズル4を設けたブラシ1は、ブラシ洗浄槽2の中と
ブラシ洗浄槽2の外に配置されたウエハ31を載置する
ステージ41上とを自在に移動するようになっている。
また、ブラシ洗浄槽2には、第1の排水管5が設けられ
ている。この第1の排水管5の排水口6は、ブラシ洗浄
槽2の底面から数cmの高さ位置に設けられている。さら
にブラシ洗浄槽2には、その底面に第2の排水管7が接
続されている。排水管7には、排水管7の開閉を行うバ
ルブ8が設けられている。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a diagram showing an example of a brush cleaning sequence in the brush scrub cleaning process of the embodiment. The brush scrubbing device used in the embodiment includes a rotating drum brush 1 and a brush cleaning tank 2 as shown in FIG. Above the brush 1, there is a cleaning liquid 3 on the brush 1.
The supply nozzle 4 for supplying the is fixed. The brush 1 provided with the supply nozzle 4 is freely movable in the brush cleaning tank 2 and on the stage 41 on which the wafer 31 placed outside the brush cleaning tank 2 is mounted.
Further, the brush cleaning tank 2 is provided with a first drain pipe 5. The drain port 6 of the first drain pipe 5 is provided at a height position of several cm from the bottom surface of the brush cleaning tank 2. Further, a second drain pipe 7 is connected to the bottom surface of the brush cleaning tank 2. The drain pipe 7 is provided with a valve 8 for opening and closing the drain pipe 7.

【0013】上記構成のブラシスクラブ装置を用いたブ
ラシスクラブ洗浄工程でのブラシの洗浄方法は、以下の
様に行う。第1の工程では、先ず、ブラシ1を用いてウ
エハ31のブラシスクラブ洗浄を行う。ここでは、ブラ
シ洗浄槽2の中に満たされた洗浄液3から回転するブラ
シ1を引き上げ、ブラシ1を回転させたままウエハ31
の表面に押し当てる。その際、供給ノズル4から洗浄液
3を供給する。この時、排水管7のバルブ8を閉じ、ブ
ラシ洗浄槽2中の洗浄液3を水位を一定に保っておく。
A brush cleaning method in the brush scrub cleaning step using the brush scrubbing device having the above-described structure is performed as follows. In the first step, first, brush scrub cleaning of the wafer 31 is performed using the brush 1. Here, the rotating brush 1 is pulled up from the cleaning liquid 3 filled in the brush cleaning tank 2, and the wafer 31 is rotated with the brush 1 being rotated.
Press on the surface of. At that time, the cleaning liquid 3 is supplied from the supply nozzle 4. At this time, the valve 8 of the drain pipe 7 is closed to keep the cleaning liquid 3 in the brush cleaning tank 2 at a constant water level.

【0014】そして、上記ウエハ31の洗浄が終了した
後、図1(2)に示すように、回転するブラシ1をウエ
ハ31の上方からブラシ洗浄槽2に移動し、ブラシ洗浄
槽2中の洗浄液3でブラシ1をぬらして洗浄を行う。こ
こでは、上記工程に引き続き、供給ノズル4から洗浄液
3をブラシ1に供給し続ける。排水管7のバルブ8は引
き続き閉じておく。
After the cleaning of the wafer 31 is completed, as shown in FIG. 1B, the rotating brush 1 is moved from above the wafer 31 to the brush cleaning tank 2 and the cleaning liquid in the brush cleaning tank 2 is moved. Wet the brush 1 with 3 and wash. Here, following the above process, the cleaning liquid 3 is continuously supplied to the brush 1 from the supply nozzle 4. The valve 8 of the drain pipe 7 is continuously closed.

【0015】次いで、図1(3)に示すように、第2の
工程を行う。この工程では、回転するブラシ1に供給ノ
ズル4から洗浄液3を供給しながら、バルブ8を開けて
ブラシ洗浄槽2の中の洗浄液3を排水管7から排水す
る。その後、図1(4)に示すように、第3の工程を行
う。この工程では、ブラシ洗浄槽2の中の汚れた洗浄液
3が全て排水されてから、バルブ8を閉じる。また、供
給ノズル4からは洗浄液3を供給し続ける。
Then, as shown in FIG. 1C, a second step is performed. In this step, while supplying the cleaning liquid 3 from the supply nozzle 4 to the rotating brush 1, the valve 8 is opened to drain the cleaning liquid 3 in the brush cleaning tank 2 from the drain pipe 7. After that, as shown in FIG. 1D, the third step is performed. In this step, the valve 8 is closed after all the dirty cleaning liquid 3 in the brush cleaning tank 2 is drained. Further, the cleaning liquid 3 is continuously supplied from the supply nozzle 4.

【0016】一方、図1(1)のシーケンスで洗浄を終
了したウエハ31と、次に洗浄を行うウエハのステージ
41での交換及び、洗浄したウエハ31の乾燥を、上記
図1(2)から図1(4)に示したシーケンスと並行し
て行なう。
On the other hand, the replacement of the wafer 31 which has been cleaned in the sequence of FIG. 1 (1) with the wafer to be cleaned next on the stage 41 and the drying of the cleaned wafer 31 is performed from the above-mentioned FIG. This is performed in parallel with the sequence shown in FIG.

【0017】そして、図1(4)に示したシーケンスに
おいて、洗浄液3が排水口6からオーバーフローするま
でブラシ洗浄槽2内に溜まった後、図1(1)のシーケ
ンスに戻って新たにステージ41上に載置したウエハ3
1の洗浄を行う。以後、上記図1(2)から図1(4)
のシーケンスを順次繰り返す。
Then, in the sequence shown in FIG. 1 (4), after the cleaning liquid 3 has accumulated in the brush cleaning tank 2 until it overflows from the drain port 6, the process returns to the sequence in FIG. Wafer 3 placed on top
1. Wash 1 Thereafter, the above FIG. 1 (2) to FIG. 1 (4)
The sequence is repeated in sequence.

【0018】上記のシーケンスに従ってブラシスクラブ
洗浄工程でブラシの洗浄を行った場合、先ず、ウエハ3
1の表面に付着したパーティクルは、ウエハ31の洗浄
によってブラシ1に付着する。そして、ブラシ1に付着
したパーティクルは、ブラシ1の洗浄を行うことによっ
てブラシ洗浄槽2中の洗浄液3に排出される。ブラシ1
の洗浄が終了した後に、ブラシ洗浄槽2中の洗浄液3は
排水され、新たな洗浄液3が供給ノズル4からブラシ洗
浄槽2中に供給される。このため、ブラシ洗浄槽2中に
は、パーティクルは蓄積しない。したがって、次の繰り
返し工程では、新たな洗浄液3中でブラシ1の洗浄が行
われる。また、供給ノズル4からは常に洗浄液3を供給
しているので、ブラシ1が乾燥することはなくその清浄
度は保たれる。
When the brush is cleaned in the brush scrub cleaning process according to the above sequence, first, the wafer 3
The particles adhered to the surface of No. 1 adhere to the brush 1 by cleaning the wafer 31. Then, the particles attached to the brush 1 are discharged to the cleaning liquid 3 in the brush cleaning tank 2 by cleaning the brush 1. Brush 1
After the cleaning is completed, the cleaning liquid 3 in the brush cleaning tank 2 is drained, and new cleaning liquid 3 is supplied from the supply nozzle 4 into the brush cleaning tank 2. Therefore, particles do not accumulate in the brush cleaning tank 2. Therefore, in the next repeating step, the brush 1 is cleaned in the new cleaning liquid 3. Further, since the cleaning liquid 3 is constantly supplied from the supply nozzle 4, the brush 1 is not dried and its cleanliness is maintained.

【0019】上記実施例で示したブラシ洗浄のシーケン
スは、ウエハ31の洗浄の繰り返し工程毎に毎回行って
もよい。このように、頻繁に洗浄槽2中の洗浄液3の交
換を行えば、例えばブラシ洗浄槽2を金属で形成した場
合に、ブラシ洗浄槽2から洗浄液3に溶出した金属のウ
エハ31への逆汚染を防止できる。また、上記ブラシ洗
浄のシーケンスは、ブラシ洗浄槽2の中の洗浄液3中の
パーティクル数が多くなった時点で行うようにしても良
い。この場合、洗浄液3が節水される。
The brush cleaning sequence shown in the above embodiment may be performed every time the wafer 31 is repeatedly cleaned. Thus, if the cleaning liquid 3 in the cleaning tank 2 is frequently replaced, for example, when the brush cleaning tank 2 is made of metal, the metal 31 eluted from the brush cleaning tank 2 into the cleaning liquid 3 is reversely contaminated to the wafer 31. Can be prevented. Further, the brush cleaning sequence may be performed when the number of particles in the cleaning liquid 3 in the brush cleaning tank 2 increases. In this case, the cleaning liquid 3 saves water.

【0020】[0020]

【発明の効果】以上、実施例で詳細に説明したように、
本発明のブラシスクラブ洗浄工程におけるブラシの洗浄
方法によれば、ブラシの洗浄を行った後にその洗浄液を
全てブラシ洗浄槽から排水して新たな洗浄液を給液する
ようにしたので、ブラシ洗浄槽内の洗浄液が清浄に保た
れる。したがって、ブラシスクラブ洗浄工程において、
ブラシからウエハへの逆汚染が防止され、半導体装置の
歩留りと信頼性の向上が期待される。
As described above in detail in the embodiments,
According to the brush cleaning method in the brush scrub cleaning step of the present invention, after cleaning the brush, all the cleaning liquid is drained from the brush cleaning tank and a new cleaning liquid is supplied. The cleaning liquid of is kept clean. Therefore, in the brush scrub cleaning process,
Back contamination from the brush to the wafer is prevented, and the yield and reliability of the semiconductor device are expected to improve.

【図面の簡単な説明】[Brief description of drawings]

【図1】実施例のシーケンスを示す図である。FIG. 1 is a diagram showing a sequence of an embodiment.

【図2】従来例のシーケンスを示す図である。FIG. 2 is a diagram showing a sequence of a conventional example.

【符号の説明】[Explanation of symbols]

1 ブラシ 2 ブラシ洗浄槽 3 洗浄液 31 ウエハ 1 brush 2 brush cleaning tank 3 cleaning liquid 31 wafer

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ウエハ表面をブラシを用いて洗浄する工
程を繰り返す際に、前記ブラシを洗浄する方法であっ
て、 回転するブラシに洗浄液をかけながらウエハの表面に当
該ブラシを押し当てて当該ウエハの表面を洗浄した後
に、前記ブラシを回転させながらブラシ洗浄槽の中の洗
浄液で当該ブラシをぬらすことによって当該ブラシを洗
浄する第1の工程と、 前記ブラシ洗浄槽の中の洗浄液を排水する第2の工程
と、 前記ブラシ洗浄槽の中に洗浄液を給液する第3の工程と
を行うことを特徴とするブラシスクラブ洗浄工程におけ
るブラシの洗浄方法。
1. A method of cleaning the brush when repeating the step of cleaning the surface of the wafer with a brush, which comprises pressing the brush against the surface of the wafer while applying a cleaning liquid to the rotating brush. After cleaning the surface of, the first step of cleaning the brush by wetting the brush with the cleaning solution in the brush cleaning tank while rotating the brush, and the first step of draining the cleaning solution in the brush cleaning tank. A method of cleaning a brush in a brush scrub cleaning step, which comprises performing the step 2 and a third step of supplying a cleaning liquid into the brush cleaning tank.
JP5140044A 1993-05-18 1993-05-18 Brush cleaning method in brush scrubbing process Pending JPH06333895A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5140044A JPH06333895A (en) 1993-05-18 1993-05-18 Brush cleaning method in brush scrubbing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5140044A JPH06333895A (en) 1993-05-18 1993-05-18 Brush cleaning method in brush scrubbing process

Publications (1)

Publication Number Publication Date
JPH06333895A true JPH06333895A (en) 1994-12-02

Family

ID=15259678

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5140044A Pending JPH06333895A (en) 1993-05-18 1993-05-18 Brush cleaning method in brush scrubbing process

Country Status (1)

Country Link
JP (1) JPH06333895A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111069115A (en) * 2018-10-22 2020-04-28 长鑫存储技术有限公司 post-CMP cleaning method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111069115A (en) * 2018-10-22 2020-04-28 长鑫存储技术有限公司 post-CMP cleaning method

Similar Documents

Publication Publication Date Title
KR100335450B1 (en) A semiconductor device washing apparatus and a method of washing a semiconductor device
JP2001096245A (en) Cleaning method and cleaning equipment
US6248180B1 (en) Method for removing particles from a semiconductor wafer
JPH06333895A (en) Brush cleaning method in brush scrubbing process
JPS63239953A (en) Washing apparatus for semiconductor wafer
JPH05347287A (en) Cleaning device
JP3038449B2 (en) Cleaning method and cleaning device
JP4507365B2 (en) Substrate edge cleaning equipment
JPH08229524A (en) Device for washing cassette for liquid crystal
JP2767165B2 (en) Wafer cleaning tank
JPS59195653A (en) Method and device for washing photomask
JPS62156659A (en) Method and apparatus for cleaning
US20070144559A1 (en) Unit for preventing a substrate from drying, substrate cleaning apparatus having the unit and method of cleaning the substrate using the unit
JPS62279640A (en) Wafer washing apparatus
KR100321546B1 (en) Apparatus and method for chuck cleaning of transfer robot
KR100837533B1 (en) Spin scrubber brush cleaning apparatus and method thereof
JPH0618627Y2 (en) Cleaning and draining device
JP3000997B1 (en) Semiconductor cleaning apparatus and semiconductor device cleaning method
JPS6169983A (en) Processing device
JPH04281884A (en) Washing method for washing brush
JPH06267923A (en) Cleaning device for semiconductor substrate
KR20120076700A (en) Method for cleaning acid sludgy on disc filter
JPH06104376A (en) Rinse water drier in flon substitute washing
JPH11307495A (en) Brush cleaning device and work-cleaning system
JPH0884967A (en) Device and method for substrate washing