TWI603365B - Charged particle beam drawing device and drawing data creation method - Google Patents

Description

Charged particle beam drawing device and drawing data creating method

The present invention relates to a charged particle beam drawing device and a method of creating a drawing data.

With the high integration of LSIs, the circuit line width required for semiconductor devices is being refined year by year. In order to form a desired circuit pattern for a semiconductor device, a method of using a reduced projection type exposure device to form a high-precision original pattern (photomask, or particularly for a stepper or The scanner is also known as a reticle to reduce the transfer onto the wafer. The high-precision original pattern is drawn by an electron beam drawing device, using so-called electron beam lithography.

When performing electron beam drawing, the layout of the semiconductor integrated circuit is first designed, and layout data (design data) is generated. Then, the layout data is converted into a drawing material and input to the electron beam drawing device. The electron beam drawing device performs drawing based on the drawing data.

In the electron beam depiction, there are various phenomena that cause dimensional changes, such as the influence radius of the proximity effect of 10 μm, the fogging effect or the loading effect. The radius of influence is a few mm. Inside the drawing device, in order to suppress dimensional changes caused by these effects, the dose correction calculation is performed in real time.

In terms of the phenomenon of causing dimensional variation, a proximity effect unique to an EUV mask having an extremely short radius of 300 nm to 400 nm is known. When the dose correction calculation is performed in consideration of this influence, it is necessary to divide the drawing area by, for example, 50 nm to 100 nm, and calculate each small area to be divided, so that the processing time of the correction calculation becomes large. It is difficult to perform such calculation in real time inside the drawing device. Therefore, it is preferable to calculate the correction amount in advance and input the created correction information to the drawing device.

However, the amount of correction information in the form of a map is large and cannot be efficiently transmitted. In addition, the correction information composed of one data file is not suitable for parallel distributed processing, and data processing cannot be performed efficiently.

An embodiment of the present invention provides a charged particle beam drawing device and a drawing data creating method, which can improve processing efficiency with drawing data for suppressing correction information of a pattern size change caused by a phenomenon that affects a small radius.

A charged particle beam drawing device according to an embodiment includes a drawing unit that draws a pattern on a drawing region on a substrate by a charged particle beam, and a control unit that inputs a layered corrected map drawing material to perform drawing data Data transformation processing to generate firing data, and correcting the mapping from stratification Reading and drawing a divided map corresponding to the block of the target area to calculate a dose, and controlling the drawing unit according to the shot data and the calculated dose; wherein the layered corrected map is drawn with A hierarchical correction map having a plurality of files, wherein the plurality of files are segmented maps containing dose information of the block units in which the drawing regions are divided, and the sub-frame units are archived.

200‧‧‧correction/transformation device

201‧‧‧Amendment

202‧‧‧Distribution Department

204‧‧‧Archives Department

220‧‧‧Control Department

230‧‧‧Drawing Department

240‧‧‧Electronic tube

241‧‧‧Electronic gun

242‧‧‧ illumination lens

243‧‧‧1st aperture

244‧‧‧Projection lens

245‧‧‧ deflector

246‧‧‧2nd aperture

247‧‧‧object lens

248‧‧‧ deflector

250‧‧‧XY platform

260‧‧‧electron beam

270‧‧‧Photomask substrate

10‧‧‧Diagram area

21~27‧‧‧Divided mapping

Fig. 1 is a flow chart showing the data conversion method of the first embodiment.

Fig. 2 is a schematic configuration diagram of an electron beam drawing system according to the first embodiment.

Fig. 3 is a block diagram showing a correction/transformation apparatus according to the first embodiment.

Fig. 4 is a diagram showing an example of a hierarchical structure of data.

FIG. 5 is a schematic diagram of an example of a sub-frame and a block.

FIG. 6 is a schematic diagram showing an example in which one partitioned map is included in one block.

FIG. 7 is a schematic diagram showing an example in which two partitioned maps are included in one block.

FIG. 8 is a schematic diagram showing an example of a plurality of divided enmaps having different mesh sizes in one block.

FIG. 9 is a schematic diagram of the data structure of the hierarchical correction map.

Figures 10(a) and (b) are schematic views of the displacement of the enantiomeric region.

Figures 11(a) and (b) are schematic diagrams showing the order in which the mesh values are defined.

Figure 12 is a schematic diagram of an example of a sub-frame and a block.

Figure 13 is a diagram showing an example of a hierarchical correction map.

Figure 14 is a state in which the corrected enant map corresponding to the same wafer is adjacent schematic diagram.

Fig. 15 is a diagram showing an example of division of a modified enant map.

Fig. 16 is a view showing an example of dividing a wafer into two blocks.

Figure 17 is a diagram showing an example of segmenting a modified enmap in response to a block.

18(a) and 18(b) are explanatory diagrams of the stratified correction alignment diagram of the second embodiment.

Figure 19 is a schematic diagram of a modified alignment of two adjacent wafers.

Fig. 20 is a view showing an example in which a wafer is divided into two blocks.

Fig. 21 is a diagram showing an example of dividing a corrected enmap in response to a block.

Fig. 22 is a diagram showing an example of dividing a corrected enmap in response to a block.

23(a) and 23(b) are explanatory diagrams of the stratified correction alignment diagram of the third embodiment.

Fig. 24 (a) and (b) are explanatory diagrams of the stratified correction alignment diagram of the third embodiment.

Fig. 25 is a view showing the structure of the data of the drawing data of the third embodiment.

Hereinafter, embodiments of the present invention will be described based on the drawings.

[First Embodiment]

Fig. 1 is a flow chart for explaining a data conversion method for converting and converting the dose information of a pattern size change caused by a phenomenon having a small influence radius into a hierarchical format with data. Figure 1 As shown in the figure, the method includes: designing the data D1 and the input condition of the correction condition parameter (step S102), and creating a drawing data of the dose information (corrected mapping) in the form of a pair of maps composed of one file ( Step S104), the project in which the corrected map is divided and distributed to each block (step S106), and the divided corrected map (divided map) is archived in the sub-frame unit (step S108) And a project for outputting the corrected map image data having the hierarchical structure (step S110).

2 is a schematic configuration diagram of an electron beam drawing system. As shown in FIG. 2, the electron beam drawing system includes a correction/transformation device 200 and a drawing device having a control unit 220 and a drawing unit 230.

The drawing unit 230 includes an electron microscope barrel 240, an XY stage 250, an electron gun 241, an illumination lens 242, a first aperture 243, a projection lens 244, a deflector 245, a second aperture 246, a counter lens 247, and a deflector 248.

The correction/transformation device 200 generates the layered corrected map drawing data D2 using the design data D1 and the correction condition parameters. The design data D1 is a layout material based on the layout of the semiconductor integrated circuit, and is converted into a drawing device that can be input to the drawing device to generate drawing data. The correction map is set according to the correction condition parameters and consists of 1 file. The stratified correction map is to divide the modified map into a hierarchical structure.

The control unit 220 performs a data conversion process on the drawing data in a plurality of stages to generate a firing data unique to the device. Further, the control unit 220 corrects the map by the stratification, and calculates the dose of the mesh area of each predetermined size. The control unit 220 controls the drawing unit 230 based on the shot data and the calculated dose, and draws a desired image on the mask substrate 270 to be drawn. Shape pattern.

The electron beam 260 emitted from the electron gun 241 illuminates the entire first aperture 243 having a rectangular hole by the illumination lens 242. Here, the electron beam 260 is first formed into a rectangular shape. Next, the electron beam 260 passing through the first aperture image of the first aperture 243 is projected onto the second aperture 246 by the projection lens 244. The position of the first aperture image on the second aperture 246 is controlled by the deflector 245, and the beam shape and size can be changed. Then, the electron beam 260 having passed through the second aperture image of the second aperture 246 is focused by the objective lens 247, deflected by the deflector 248, and irradiated onto the movable XY stage 250. The desired position of the mask substrate 270.

FIG. 3 is a schematic configuration diagram of the correction/transformation device 200. The correction/transformation apparatus 200 includes a correction unit 201 that creates a corrected map by using the design data D1 and the correction condition parameter, and converts the design data into the drawing data, and the distribution unit 202 distributes the corrected map to each block. And the file creation unit 204, and the divided maps assigned to the respective blocks are archived in the sub-frame unit, so that the corrected map has the same hierarchical structure as the data, and the layered modified map is created. Describe the data D2. Fig. 4 is a diagram showing an example of a hierarchical structure of data.

In the layout data, a plurality of cells are arranged on the wafer, and then the graphics are arranged in each cell. The correction unit 201 converts the layout material (design data) into drawing data in which the shape and position of the graphic are defined. In the drawing data, as shown in FIG. 4, the drawing area is a layer that is layered into a wafer, and the wafer area is divided into a direction parallel to the drawing surface (for example, the y direction) in a short book shape. The layer of the frame, the layer of the sub-frame formed by dividing the frame area into a region of a predetermined size, the layer of the block formed by dividing the sub-frame area into a region of a predetermined size, and the layer of the above-mentioned lattice And a series of a plurality of internal constituent units as a layer of a pattern constituting the pattern of the grid.

The correction map, for example, is set with dose information corresponding to the grid, and the dose information corresponding to a block or a part of the block becomes a split map. The segmentation map is segmented by the mesh and is defined with dose information (dose or dose modulation rate) as the mesh value.

The corrected enant map has dose information for suppressing dimensional changes caused by the proximity effect unique to the extremely short EUV mask having an influence radius of 1 μm or less, for example, 300 nm to 400 nm. Therefore, the mesh size of the divided digraph is divided into meshes, which is about 1/10 of the radius of influence, for example, about 30 nm to 100 nm.

In the modified enmap, as shown in FIG. 5, the entropy area 10 is defined by a plurality of sub-frames, and each sub-frame is composed of a plurality of blocks. In the example shown in Fig. 5, the entropy area 10 has four sub-frames (0, 0) (0, 1) (1, 0) (1, 1). Each frame has 8 blocks (0,0)(0,1)(0,2)(0,3)(1,0)(1,1)(1,2)(1,3).

Each block may contain a split map. FIG. 6 shows an example in which one block includes one split map, and FIG. 7 shows an example in which one block includes two split maps. Alternatively, there may be blocks that do not contain a split mapping.

As shown in FIG. 8, a plurality of divided enmaps included in one block may also be different in mesh size.

The distribution unit 202 divides the corrected map into sub-frames and blocks, and distributes the split map to each block. The file creation unit 204 archives the divided maps corresponding to the respective blocks in the sub-frame unit, and creates the layered corrected map drawing data D2. For example, in the example shown in FIG. 5, four files are created from the map area 10.

Figure 9 reveals the data structure of the hierarchically modified mapping. The stratification correction map has set data, block indicators, and correction data. Block indicators and correction data are archived in sub-frame units. In the setting data, the address unit, the map area size, the block size, the sub-frame size, and the offset are defined.

The information of the (geometric) size and the (displacement value, etc.) contained in the stratification correction map is defined as an integer multiple of the address unit defined in the setting data. For example, when the address unit is 1 nm, if the area size of the X-direction of the map is 2 mm, the size X of the map area of the data is set to define a value of 2 × 1000 × 1000/1 = 2000000. The enantiomeric region size X and the enantiomeric region size Y indicate the dimensions of the enantiomeric region 10 in the x direction and the y direction. The block size X and the block size Y indicate the size of the x-direction and the y-direction of one block. The sub-frame size X and the sub-frame size Y represent the dimensions of the x-direction and the y-direction of one sub-frame. In the example shown in FIG. 5, the sub-frame size X is twice the block size X, and the sub-frame size Y is four times the block size Y.

The displacements PX and PY indicate displacements in the x direction and the y direction of the enant map area 10 when viewed from the origin. As shown in Figs. 10(a) and (b), the origin is the origin of the wafer or the origin of the mask.

The revised data of the hierarchical correction map includes a block index, a split map index, and a split map data. The block index is defined in each block, indicating the ID of the block in the sub-frame and the number of split maps included. Next, the block index is stored, and for each of the divided maps contained in the block, the split map index and the split map data are stored.

The split mapping index includes the mapping type, mesh size, number of meshes, displacement, mesh value definition data length, mesh value definition order flag, and compression type identification flag. For example, the dose mapping is described in the enantiomeric species. The mesh size X and the mesh size Y represent the mesh sizes in the x direction and the y direction in the divided enmap. By defining the mesh size information for each block, as shown in FIG. 8, a split map of different mesh sizes can be configured in the 1 block.

The number of meshes X and the number of meshes Y indicate the number of meshes in the x direction and the y direction in the divided map. The displacement X and the displacement Y indicate displacements in the x direction and the y direction from the reference point of the block (for example, the lower left vertex). The mesh value defines the length of the data, indicating the length of the data of the mesh value.

The mesh value defines a sequence flag indicating the order in which the mesh values in the split map are defined. For example, in the case where the mesh value definition order flag is 0, as shown in FIG. 11(a), the mesh value is defined toward the x direction. In the case where the mesh value definition order flag is 1, as shown in FIG. 11(b), the mesh value is defined in the y direction.

The compressed type identification flag is followed by the split mapping index to indicate whether the split mapping data is compressed. For example, when the compression type identification flag is 0, it means that the split map data is uncompressed, when compressed In the case where the state recognition flag is 1, it indicates that the split map data is compressed. The file creating unit 204 compresses the divided map data when the data size of the divided map data is equal to or greater than a predetermined value, and sets 1 for the compressed type flag.

The uncompressed split map data contains the length of the map data and the map data. The compressed split map data includes compressed map data length, uncompressed map data length, and compressed map data. The mapping data has the mesh value (dose or dose modulation rate) of the split mapping. The split map data is padded.

As shown in FIG. 9, in the correction data, the block index, the split map index, and the split map data corresponding to the plurality of blocks included in one sub-frame are successively juxtaposed. For example, in the hierarchical correction map corresponding to the sub-frame (0, 0) shown in FIG. 5, the block (0, 0), the block (0, 1), and the block (0, 2), the order of block (0,3), block (1,0), block (1,1), block (1,2), block (1,3), and block index And the split map index and the split map data of each split map included in the block.

The block indicator contains the block ID of each block included in one sub-frame and the information indicating the start position of the corresponding correction data. By referring to the block index, the corrected data of the desired block can be easily accessed.

The hierarchical correction map will be further described with reference to specific examples shown in Figs. 12 and 13 . Fig. 12 shows an example of a sub-frame which is defined by four blocks (0, 0), blocks (0, 1), blocks (1, 0), and blocks (1, 1). What constitutes a block.

The partition (0, 0) contains split mappings 21, 22. The partition (0, 1) contains a split map 23 . The partition (1, 0) contains split mappings 24, 25. The block (1, 1) contains split maps 26 and 27.

Fig. 13 is a view showing the stratified correction map for the sub-frame shown in Fig. 12. The block indicator indicates the start position of the correction data of the block (0, 0), the block (0, 1), the block (1, 0), and the block (1, 1).

The block index of the block (0, 0) is followed by the split map image of the split map 21, the split map data of the split map 21, and the split map of the split map 22 The split and map data of the map 22 are indexed and divided. Further, the block index of the block (0, 1), the divided map index of the divided map 23, and the divided map data of the divided map 23 are stored. Next, the block index of the block (1, 0), the split map index of the split map 24, the split map data of the split map 24, and the split map of the split map 25 are stored. Indexing and splitting the split map data of the map 25 . Then, the block index storing the block (1, 1), the split map index of the split map 26, the split map data of the split map 26, and the split map of the split map 27 are stored. The map is indexed and the split map data of the split map 27 is divided.

For example, the block index of the block (0, 0) reveals that the divided maps included are two. The divided engraving map index area of the divided entropy map 21 includes the mesh size, the number of meshes, and the displacement from the origin of the block (0, 0). In the divided map data area of the divided map 21, the mesh value of the split map 21 is stored in a compressed or uncompressed state. Block indicators and correction data, in the sub-frame unit Archival.

In this embodiment, the corrected mapping map of the dose information with the enantiograph format is archived in each sub-frame and transformed into a hierarchical structure to represent the correction pair in a plurality of files. Map. In other words, in the stratified correction map mapping data D2, the stratified correction map system and the drawing material have the same hierarchical structure, and each zoning corresponding to the drawing data is archived. Therefore, in the calculation processing in the control unit 220 of the drawing device, it is only necessary to access the file of the layered correction map corresponding to the region to be calculated. For example, the control unit 220 searches for a frame in which the calculation target region exists, then searches for the secondary frame, searches for the block, and reads the map that is attached to the block. Compared with the case where the entire corrected map is composed of one file, the memory capacity necessary for the arithmetic processing is reduced, and the processing speed is increased, and the data processing efficiency can be improved.

In addition, each split map has a split map index and defines a mesh size, etc., so that split maps of different mesh sizes can be used together. The mesh size can be changed in accordance with the necessary accuracy, so that the accuracy can be maintained and the amount of data of the layered correction map can be reduced.

In the above embodiment, the correction data can be created from the design data D1 and the correction condition parameter by the design tool, and the modified map image with the corrected map formed by the 1 file can be outputted, and the correction/transformation device can be modified. 200 creates a layered corrected map drawing material D2 from the corrected map drawing data.

[Second Embodiment]

Figure 14 reveals a state in which the corrected enmap corresponding to the same wafer is contiguous. The number of meshes of the corrected alignment map of the wafer A of FIG. 14 is set to six in the x direction and the y direction, respectively.

The left and right wafers A have different peripheral environments at the left and right ends, and thus the mesh values are different. Specifically, the right end of the wafer A on the left side and the left end of the wafer A on the right side interact with each other, so the mesh value of the mesh m ₀₀ ~ m ₀₅ of the left wafer A and the mesh m' ₀₀ ~ m' _{05 of} the right wafer A Will be different. Similarly, the mesh values of the meshes m ₅₀ to m ₅₅ of the left wafer A and the meshes m' ₅₀ to m' _{55 of} the right wafer A may be different. Therefore, the two wafers A cannot be represented by one type of corrected alignment map. In the case where the corrected alignment map of the entire wafer is provided for each of the two wafers A, the amount of data becomes large.

Accordingly, in the present embodiment, as shown in FIG. 15, the corrected map of the wafer A is divided into a left end portion, a center portion, and a right end portion. The left end portion of the left wafer A is set as the map O1L, the center portion is set as the map C, and the right end portion is set as the map O1R. The left end portion of the right wafer A is set as the map O2L, the center portion is set as the map C, and the right end portion is set as the map O2R. In the left and right wafers A, the correction values are different from the left and right ends, and the central portion is the same alignment.

Moreover, as shown in FIG. 16, it is assumed that the wafer A is composed of two blocks B ₀₀ and B ₁₀ . In this case, as shown in FIG. 17, the map C of the central portion of the wafer A is divided into an alignment map CL and an alignment map CR.

When such a modified map is defined, a job deck link code is appended to the split map index. For example, as shown in Fig. 18( _a ), the map and the link code defined in the blocks B ₀₀ and B ₁₀ are specified. Then, the job alignment pair as shown in Fig. 18(b) is described in the divided entropy index.

In this way, as shown in FIG. 14, when a plurality of the same wafer are disposed on the reticle, and the enantiograph data of the two are different only in the boundary area of the wafer due to the difference in the surrounding environment, it is not necessary to repeat Holding the map data at the center of the wafer can reduce the amount of data in the stratified correction map.

[Third embodiment]

In the first embodiment described above, the corrected map of the dose information for suppressing the variation in the pattern size caused by the phenomenon of the small influence radius is described. However, it is also possible to take into consideration the phenomenon that the influence radius is large. Fix the information.

As shown in FIG. 19, it is assumed that the wafer A and the wafer B are adjacent to each other. The corrected alignment map of the wafer A is set as the alignment map MA, and the corrected alignment map of the wafer B is set as the alignment map MB. In the wafer A, since the influence of the adjacent wafer B is neglected, the dose correction of the phenomenon in which the influence radius is small and the phenomenon in which the radius of influence is large is performed only in the center portion. Similarly, in the wafer B, since the influence of the adjacent wafer A is neglected, the dose correction of the phenomenon in which the influence radius is small and the phenomenon in which the radius of influence is large is performed only in the center portion.

In the other areas of the wafer A and the wafer B, the dose correction for the phenomenon that affects the radius is not performed, and only the dose correction for the phenomenon that the radius of influence is small is performed. The dose correction for the phenomenon that affects the radius in these regions is performed in the drawing device.

A correction code is introduced to indicate that the dose correction is performed for a phenomenon that affects a small radius and a phenomenon that affects a large radius. The central portion of the wafer A is set as a correction code designation area, and the map of the area is set as an alignment map CCA. The central portion of the wafer B is set as a correction code designation area, and the map of the area is defined as an alignment map CCB. The format of the mapping CCA, the mapping CCB, and the split mapping are set to be the same.

Moreover, as shown in FIG. 20, it is assumed that the wafer A is composed of two blocks BA ₀₀ and BA ₁₀ , and the wafer B is composed of two blocks BB ₀₀ and BB ₁₀ . In this case, as shown in FIG. 21, the map MA is divided into the maps MA ₀₀ and MA ₁₀ , and the map MB is divided into the maps MB ₀₀ and MB ₁₀ . Further, as shown in FIG. 22, the map CCA of the correction code designation region is divided into the entropograms CCA1 and CCA2, and the entropy map CCB is divided into the entropy maps CCB1 and CCB2.

When FIG. 21 and FIG. 22 are combined, the wafer A is expressed as shown in FIG. 23(a), and the alignment is defined as shown in FIG. 23(b). The wafer B is expressed as shown in Fig. 24(a), and the alignment is defined as shown in Fig. 24(b). In the maps CCA1, CCA2, CCB1, and CCB2, the "correction code designation frame" is described in the map type (see FIG. 9) of the divided enmap index.

In this way, by defining the correction code designation area and the drawing device, it is possible to determine the area of the dose correction for the phenomenon in which the influence radius is large by the external device. In the center portion of the wafer in which the influence of the adjacent wafer can be ignored, the external device performs dose correction for a phenomenon in which the radius of influence is small and a phenomenon in which the radius of influence is large, thereby reducing the amount of calculation in the drawing device and enabling the processing efficiency. Upgrade.

[Fourth embodiment]

As described in the first embodiment, the hierarchical correction map and the drawing material have the same hierarchical structure. Therefore, it is also possible to define an indicator for correcting the mapping data corresponding to the beginning of each block of the data (grid configuration information file), and from which it links to the corresponding region of the hierarchical correction mapping map. Block corrections.

Figure 25 discloses an example of a data structure depicting data. Descriptive information, with grid configuration information files, link information files, and pass pattern data files. 25 is a diagram showing a case where at least one of the cells CA, CB, and CC is disposed in four blocks (0, 0), (0, 1), (1, 0), and (1, 1). data.

In the grid configuration information file, in each block area, configuration information for configuring one of a plurality of component elements, that is, cells CA, CB, and CC is included. The grid configuration information is expressed by coordinates such as the arrangement position of the reference point of the grid. Here, the file header of the grid configuration information file is stored, and the block (0, 0) header, the indicator of the corrected map data of the block (0, 0), and the block are arranged (0, 0) The inner grid configuration information L1, the grid configuration information L2, the block (0, 1) header, the modified map data of the block (0, 1), and the index (0, 1) The inner grid configuration information L3, the grid configuration information L4, the block (1, 0) header, the indicator of the modified map data for the block (1, 0), and are arranged in the block (1, 0). Grid configuration information L5, grid configuration information L6, block (1, 1) header, indicator of corrected map data for block (1, 1), match The grid configuration information L7 placed in the block (1, 1).

Each of the grid configuration information Ln includes a grid configuration coordinate and a link information index. With the data, the grid configuration information file can grasp the coordinates indicating the positions of the cells arranged in the respective blocks, and the information for linking them to the later-described grid pattern information.

The grid data file contains the pattern information of CA, CB and CC. Here, the grid pattern CA of the pattern data of the grid CA, the grid pattern data CB of the pattern data of the schematic grid CB, and the grid pattern data of the pattern data of the schematic grid CC are sequentially stored once.

The link information file contains link information for the link configuration information and the grid pattern information link. For example, the lattice configuration information L1 refers to the grid pattern CA via the link information k1. In this way, since the grid arrangement information and the grid pattern data are made into individual files, it is not necessary to hold the pattern data at each of the arrangement positions, so that the amount of data for drawing the data can be reduced.

In the present embodiment, as shown in Fig. 25, the header of each block in which the information file is placed is stored, and an index of the corrected map for the corresponding block is stored. By referring to this indicator, the corresponding block of the stratified correction map is directly linked from the descriptive data. In this way, in the calculation processing in the drawing device, the data of the respective blocks corresponding to the drawing data and the hierarchical correction map can be easily accessed, and the data processing efficiency can be further improved.

The drawing data shown in Fig. 25 is created from design data by a drawing data creating device not shown. Depicting a data creation device, dividing the drawing area into a plurality of blocks according to the design data, and dividing each of the divided areas a block configuration information file, wherein the grid configuration information file includes configuration information for configuring one of the plurality of cells and a storage location of the split map index indicating the corresponding block in the hierarchically corrected mapping map Indicators.

Describe the data creation device, and create a grid pattern data file containing the pattern data according to the design data. In addition, the data creation device is configured to create a link information file containing link information of the link configuration information and the grid pattern information according to the design data. Further, a data creation device is created, and the depiction data having the grid configuration information file, the grid pattern data file, and the link information file is created and output.

In the above embodiment, an example in which the electron beam is used is described as an example of the charged particle beam. However, the charged particle beam is not limited to the electron beam, and may be another charged particle beam such as an ion beam.

At least a part of the correction/transformation device 200 described in the above embodiment may be constituted by a hardware such as an electronic circuit, or may be configured by a soft body. In the case of a software configuration, a program for realizing at least a part of the functions of the conversion device 200 may be stored in a recording medium, and a computer including an electronic circuit or the like may be read in and executed. The recording medium is not limited to a loader such as a disk or a compact disc, and may be a fixed type of recording medium such as a hard disk device or a memory.

In addition, a program for realizing at least a part of the functions of the correction/transformation device 200 may be distributed via a communication line (including wireless communication) such as the Internet. Alternatively, the same program may be encrypted, or modulated, or compressed or transmitted through a wired or wireless line such as the Internet, or stored on a recording medium.

In addition, the present invention is not limited to the above embodiment itself, and is implemented in the stage. In the paragraph, the constituent elements can be modified and embodied without departing from the gist of the invention. Further, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the above embodiments. For example, a plurality of constituent elements may be deleted from all the constituent elements shown in the embodiment. Further, constituent elements between different embodiments may be combined as appropriate.

Claims (5)

A charged particle beam drawing device includes: a drawing unit that draws a pattern on a drawing area on a substrate by a charged particle beam; and a control unit that inputs a layered corrected map drawing material and performs data conversion processing on the drawing material Generating a firing data, calculating a dose from the stratified correction map and reading the divided map corresponding to the block of the target region, and controlling the drawing unit based on the shot data and the calculated dose; The stratified correction map mapping data is provided with a hierarchical correction map having a plurality of files, the plurality of files being a divided map of the dose information including the block unit dividing the drawing area. The frame unit is archived. The charged particle beam drawing device according to the first aspect of the invention, wherein the stratified correction map includes segmentation mapping of a mesh size and a mesh number of the divided enmap included in each block. The map index and the split map data containing the dose information in each mesh are defined in each split map and are archived in the sub-frame unit. Each file has the blocks in the file. A block metric that partitions the storage location of the map index. A method for creating a drawing data of a charged particle beam drawing device, which is configured to input design data of a plurality of cells including at least one pattern defined in a wafer region, and correction condition parameters, and convert the design data into a shape defining a pattern and Location description Drawing data, using the aforementioned design data and the aforementioned modified condition parameters, obtaining dose information for correcting the proximity effect, dividing the drawing area into a plurality of sub-frames, and dividing the sub-frame into a plurality of blocks for each area The block allocation includes a split map of the dose information, and the mesh size, the number of meshes, and the dose information in each mesh included in each block are archived in a sub-frame unit, and the output is hierarchical. The entropy drawing data is corrected, and the stratified correction engraving map data includes a stratified correction map of a plurality of files corresponding to a plurality of sub-frames, and the aforementioned drawing data. A method for creating a drawing data of a charged particle beam drawing device, which is a method for creating a drawing data of a dose information for correcting a proximity effect, which is input to a charged particle beam drawing device, and inputting a modified mapping image, which is attached Correcting the mapping picture with a modified mapping map containing the dose information corresponding to the drawing area, dividing the drawing area into a plurality of sub-frames, dividing the sub-frame into a plurality of blocks, and dividing the aforementioned correction The divided maps formed by the mapping are allocated to each block, and the mesh size, the number of meshes, and the dose information in each mesh included in each block are archived in the sub-frame unit. Outputting a stratified correction map mapping data, the stratified correction map mapping material having a plurality of corresponding maps corresponding to a plurality of sub-frames The stratification of the file corrects the mapping. The method for creating a data according to the fourth aspect of the invention, wherein the design data including a plurality of cells including at least one graphic and the correction condition parameter are defined in the wafer region, and the design data is converted into a definition. Depicting the shape and position of the graphic, using the aforementioned design data and the aforementioned modified condition parameters, obtaining dose information for correcting the proximity effect, using the corrected mapping map containing the dose information corresponding to the drawing region and the aforementioned depicting data. The above-mentioned modified map is drawn.