JP5357530B2 - Drawing data processing method, drawing method, and drawing apparatus - Google Patents

Description

  The present invention relates to a drawing data processing method, a drawing method, and a drawing apparatus. For example, the present invention relates to a drawing data processing method for drawing a pattern on a sample using an electron beam, a drawing method using the processed data, and a drawing apparatus.

  Lithography technology, which is responsible for the progress of miniaturization of semiconductor devices, is an extremely important process for generating a pattern among semiconductor manufacturing processes. In recent years, with the high integration of LSI, circuit line widths required for semiconductor devices have been reduced year by year. In order to form a desired circuit pattern on these semiconductor devices, a highly accurate original pattern (also referred to as a reticle or a mask) is required. Here, the electron beam (electron beam) drawing technique has an essentially excellent resolution, and is used for producing a high-precision original pattern.

FIG. 8 is a conceptual diagram for explaining the operation of a conventional variable shaping type electron beam drawing apparatus.
The variable shaped electron beam (EB) drawing apparatus operates as follows. First, the first aperture 410 is formed with a rectangular opening 411 for forming the electron beam 330. Further, the second aperture 420 is formed with a variable shaping opening 421 for shaping the electron beam 330 that has passed through the opening 411 into a desired rectangular shape. The electron beam 330 irradiated from the charged particle source 430 and passed through the opening 411 is deflected by a deflector. And it passes through a part of variable shaping | molding opening 421, and is irradiated to the sample with which the resist material mounted on the stage was apply | coated. The stage continuously moves in a predetermined direction (for example, the X direction) during drawing. Thus, a rectangular shape that can pass through both the opening 411 and the variable shaping opening 421 is drawn in the drawing region of the sample 340. A method of creating an arbitrary shape by passing both the opening 411 and the variable molding opening 421 is referred to as a variable molding method (for example, see Patent Document 1).

  In performing such electron beam drawing, first, a layout of a semiconductor integrated circuit is designed and layout data is generated. When drawing a pattern defined in such layout data, the following data processing is performed in the drawing apparatus.

  FIG. 9 is a diagram showing a flowchart of each process of data processing in the case of multiplicity 1 and simple multiplicity N, and comparison of data amount in each process. In drawing a pattern, a method of drawing a pattern by one drawing and a method of drawing a pattern by drawing multiple times are performed. In particular, in the case of multiple drawing, there are multiple drawing in which the subfield (SF) is shifted and drawn, and simple multiple drawing in which drawing is repeated N times on the same SF without shifting the position. Here, the flowchart of each step of data processing and the comparison of the data amount in each step are shown for multiplicity 1, that is, the case of drawing only once and the case of performing simple multiple drawing. In any case, the localization process (S200), the figure conversion process (S210), and the shot conversion process (S220) are performed.

  First, in the localization step (S200), data processing is virtually divided into a plurality of processing areas for performing distributed processing. Here, when drawing a plurality of chips on a sample substrate, the plurality of chips are merged under a predetermined condition, converted into one chip area, and then virtually divided into a plurality of processing areas. The As an internal process of the localization process (S200), first, layout data is read from the storage device 240 (S202), the drawing area defined in the layout data is virtually divided into a plurality of processing areas, and the layout data is distributed for each processing area. (S204). Then, layout data is output to the storage device 242 for each processing area (S206).

  Next, in the figure conversion step (S210), a subfield (SF) area is set with a deflectable size of a deflector smaller than the processing area. These are divided by the respective sizes from the reference position of the chip area. As an internal process of the graphic conversion process (S210), first, layout data is read from the storage device 242 (S212), and a subfield (SF) area is set with a deflectable size of a deflector smaller than the processing area. Pattern data is distributed (S214). Then, the processed data is output to the storage device 244 (S216).

  Next, in the shot conversion step (S220), shot data for shooting an electron beam with the drawing apparatus is generated. As an internal process of the shot conversion process (S220), first, data is read from the storage device 244 (S222), and shot data for generating an electron beam with the drawing apparatus is generated by data conversion. The processed shot data is output to the storage device 246 (S226).

Here, in the case of a drawing process in which the degree of multiplicity is 1, that is, drawing processing that is drawn only once, it is sufficient to prepare drawing data for one time, whereas in simple multiple drawing, drawing data for N times is required. Conventionally, in simple multiple rendering, since the SF division processing is repeated by the number of times of rendering in the SF division processing (S214), the amount of data is about N times that in the case of this step as compared with the case where the data amount is 1. It was. Therefore, the amount of data processed in each subsequent process is about N times that of the multiplicity of 1. For this reason, not only processing time in a plurality of steps after the SF division processing (S214) is increased, but storage time in the storage device 244 and transfer time from the storage device 244 are also increased. For this reason, there has been a problem that the drawing time significantly increases as the amount of drawing data increases with the recent miniaturization of patterns.
JP 2008-218857 A

  As described above, in simple multiple rendering, the amount of data is about N times that in the case where the multiplicity is 1 at the stage where many stages of processing are left in the data processing flow. Therefore, the amount of data processed in each subsequent process is about N times that of the multiplicity of 1. For this reason, not only the processing time in the subsequent multiple data processing steps increases, but also the storage time in the middle of the storage device and the transfer time from the storage device also increase. For this reason, there has been a problem that the drawing time significantly increases as the amount of drawing data increases with the recent miniaturization of patterns. Further, the increase in the amount of data has a problem in that resources (for example, a CPU, a memory, and a magnetic disk device) necessary for data processing are forced to increase or increase, leading to an increase in the size and cost of the drawing apparatus. there were.

  In order to overcome such problems, an object of the present invention is to provide a drawing data processing method, drawing method, and drawing apparatus capable of reducing the amount of data during data processing as much as possible.

In one embodiment of the present invention, a drawing data processing method includes:
A step of inputting layout data in which a plurality of graphic patterns are defined in a chip area and storing the layout data in a storage device;
Defining the pattern data of the graphic pattern arranged in each small region for each small region of the plurality of small regions into which the chip region is divided, for one drawing when performing multiple drawing;
Converting the pattern data defined for one drawing at the time of performing the multiple drawing, and generating shot data for one drawing for shooting a charged particle beam on a sample;
A step of copying the generated shot data according to the number of repetitions when performing multiple drawing;
A step of outputting shot data for the number of times of multiple drawing;
It is provided with.

  With such a configuration, shot data is copied according to the number of repetitions when multiple drawing is performed after the shot data is generated. Therefore, the stage before the shot data is generated is the same as when the data amount is multiplicity 1.

And before generating shot data, further comprising the step of defining pattern data of a graphic pattern arranged in each small area for each of the small areas of the plurality of small areas into which the chip area is divided,
It is preferable that the identifier indicating the number of repetitions described above is defined in the data after the pattern data is defined for each small area.

And further comprising the step of setting a plurality of small region groups composed of at least one of the small regions,
The identifier is preferably defined for each small area group.

Further, before generating shot data, defining a pattern data of a graphic pattern arranged in each small area for each small area of a plurality of small areas into which the chip area is divided,
Setting a plurality of small area groups composed of at least one small area;
Further comprising
It is preferable that an identifier indicating the number of repetitions is defined for each small area group.

A drawing method according to one embodiment of the present invention includes:
A step of inputting layout data in which a plurality of graphic patterns are defined in a chip area and storing the layout data in a storage device;
Distributing layout data to a plurality of processing areas for distributed processing of layout data;
A step of defining, for each small area of a plurality of small areas divided in a chip area with a size smaller than the processing area, pattern data of a graphic pattern arranged in each small area for one drawing when performing multiple drawing When,
Setting a plurality of small area groups composed of at least one small area;
For each processing region, converting pattern data and generating shot data for one drawing for shooting a charged particle beam;
A step of copying the generated shot data according to the number of repetitions when performing multiple drawing for each small area group,
A step of performing multiple drawing on a sample using shot data corresponding to the number of drawing times of multiple drawing so that drawing of all small region groups located in the processing region is performed in each drawing when performing multiple drawing. When,
It is provided with.

A drawing device according to one embodiment of the present invention includes:
A storage unit for inputting and storing layout data in which a plurality of graphic patterns are defined in a chip area;
For each subfield area of the plurality of subfield areas into which the chip area is divided, a subfield area that defines the pattern data of the graphic pattern arranged in each subfield area for one drawing when performing multiple drawing A dividing section;
A shot data generation unit that converts pattern data defined for one drawing at the time of performing the multiple drawing, and generates shot data for one drawing for shooting a charged particle beam on a sample;
A copying unit that copies the generated shot data according to the number of repetitions when performing multiple drawing;
Using the shot data for the number of times of multiple drawing, a drawing unit that performs multiple drawing on the sample;
It is provided with.

  According to the present invention, the amount of data during data processing can be reduced. Therefore, the processing time in a plurality of steps can be greatly reduced. Furthermore, data storage in the storage device in the middle of data processing and transfer time from the storage device can be reduced. As a result, the drawing time can be greatly reduced.

  Hereinafter, in each embodiment, a configuration using an electron beam will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam, and a beam using charged particles such as an ion beam may be used. As an example of the charged particle beam drawing apparatus, a variable shaping type electron beam drawing apparatus will be described. Hereinafter, an electron beam drawing apparatus will be described as an example, but the present invention is not limited to this, and the same applies to a laser mask drawing apparatus.

Embodiment 1 FIG.
FIG. 1 is a conceptual diagram illustrating a configuration of a drawing apparatus according to the first embodiment. In FIG. 1, the drawing apparatus 100 includes a drawing unit 150 and a control unit 160. The drawing apparatus 100 is an example of a charged particle beam drawing apparatus. The drawing apparatus 100 draws a predetermined pattern on the sample 101. The drawing unit 150 includes a drawing chamber 103 and an electronic lens barrel 102 disposed on the upper portion of the drawing chamber 103. In the electron column 102, an electron gun 201, an illumination lens 202, a first aperture 203, a projection lens 204, a deflector 205, a second aperture 206, an objective lens 207, a main deflector 208, and a sub deflector 209 are provided. Have. An XY stage 105 is arranged in the drawing chamber 103, and a sample 101 to be drawn is arranged on the XY stage 105. As the sample 101, for example, an exposure mask for transferring a pattern to a wafer on which a semiconductor device is formed is included. Further, this mask includes, for example, mask blanks on which no pattern is formed. The control unit 160 includes control computer units 110, 120, and 130, storage devices 140, 142, 144, and 146 (an example of a storage unit), and a control circuit 148. The control computer units 110, 120, and 130, the storage devices 140, 142, 144, and 146, and the control circuit 148 are connected to each other by a bus (not shown). The storage devices 140, 142, 144, and 146 may be any storage medium, and for example, a magnetic disk device or the like can be used.

  In the control computer unit 110, a data input unit 112, a localization processing unit 114, and a data output unit 116 are arranged. In the control computer unit 120, a data input unit 122, a subfield (SF) dividing unit 124, a subfield group (SFG) setting unit 126, and a data output unit 128 are arranged. In the control computer unit 130, a data input unit 132, a shot data generation unit 134, a multiple development processing unit 136, and a data output unit 138 are arranged.

  Processing of each function of the data input unit 112, the localization processing unit 114, and the data output unit 116 may be performed by software. Or you may comprise by the hardware by an electric circuit. Or you may make it implement by the combination of the hardware and software by an electrical circuit. Alternatively, a combination of such hardware and firmware may be used. In the case of implementation by software or a combination with software, at least one CPU and at least one memory (preferably a plurality of CPUs and a plurality of memories) (not shown) are arranged in the control computer unit 110. The Information input to the control computer unit 110 or information during and after the arithmetic processing is stored in at least one memory arranged in the control computer unit 110 each time.

  Similarly, the processing of each function of the data input unit 122, the SF dividing unit 124, the SFG setting unit 126, and the data output unit 128 may be performed by software. Or you may comprise by the hardware by an electric circuit. Or you may make it implement by the combination of the hardware and software by an electrical circuit. Alternatively, a combination of such hardware and firmware may be used. Further, in the case where the control computer unit 120 is implemented by software or a combination with software, a plurality of CPUs and a plurality of memories (not shown) are arranged. Information input to the control computer unit 120 or information during and after the arithmetic processing is stored in at least one memory disposed in the control computer unit 120 each time.

  Similarly, processing of each function of the data input unit 132, the shot data generation unit 134, the multiple development processing unit 136, and the data output unit 138 may be performed by software. Or you may comprise by the hardware by an electric circuit. Or you may make it implement by the combination of the hardware and software by an electrical circuit. Alternatively, a combination of such hardware and firmware may be used. In addition, when executed by software or a combination with software, a plurality of CPUs and a plurality of memories (not shown) are arranged in the control computer unit 130. Information input to the control computer unit 130 or information during and after the arithmetic processing is stored in at least one memory arranged in the control computer unit 130 each time.

  In FIG. 1, description of components other than those necessary for describing the first embodiment is omitted. Needless to say, the drawing apparatus 100 may normally include other necessary configurations.

  FIG. 2 is a diagram showing a flowchart of each process of drawing data processing in the case of multiplicity 1 and simple multiplicity N in the first embodiment, and comparison of data amount in each process. In drawing a pattern, a method of drawing a pattern by one drawing and a method of drawing a pattern by drawing multiple times are performed. In the first embodiment, simple multiplex drawing in which drawing is repeated N times on the same SF without shifting the position will be described in particular. FIG. 2 shows a flowchart of each process of data processing and comparison of the data amount in each process, particularly when the multiplicity is 1, that is, when rendering is performed only once and when performing simple multiple rendering. In any case, the drawing apparatus 100 first inputs layout data in which a plurality of graphic patterns are defined in the chip area, and stores (stores) the data in the storage device 140. In any case, the localization process (S100), the figure conversion process (S110), and the shot conversion process (S120) are performed.

  First, in the localization process (S100), data processing is virtually divided into a plurality of processing areas for performing distributed processing. Here, when drawing a plurality of chips on a sample substrate, the plurality of chips are merged under a predetermined condition, converted into one chip area, and then virtually divided into a plurality of processing areas. The As an internal process of the localization process (S100), first, the data input unit 112 reads layout data from the storage device 140 (S102). Then, the localization processing unit 114 virtually divides the chip area (drawing area) defined in the layout data into a plurality of processing areas, and distributes the layout data for each processing area (S104). Then, the data output unit 116 outputs layout data to the storage device 142 for each processing region (S106). Here, as the processing area, for example, a frame area in which the entire chip area is divided into strips with a width that can be deflected by the main deflector 208, a block area in which the frame area is further divided into a plurality of areas, and the like are suitable. .

  Next, in the figure conversion step (S110), a subfield (SF) region (small region) is set with a deflectable size of the sub deflector 209 smaller than the processing region. The plurality of SF areas are set by being divided at a predetermined size from the reference position of the chip area. Then, pattern data of a graphic pattern arranged in the SF area is defined for each SF area. In addition, a subfield group (SFG) is set here. As an internal process of the graphic conversion process (S110), first, the data input unit 122 reads layout data distributed for each processing area from the storage device 142 for each processing area (S112). Then, the SF dividing unit 124 virtually divides the chip area into a plurality of subfield (SF) areas with a deflectable size of the sub deflector 209 smaller than the processing area. Then, the SF dividing unit 124 defines pattern data of a graphic pattern arranged in the SF area for each SF area of a plurality of SF areas (small areas) set by virtual division (S114). . The SFG setting unit 126 sets a plurality of SF groups (SFG) composed of at least one SF area. In the data after the pattern data is defined for each SF area, an identifier indicating the number of repetitions k (where k = multiplicity N-1) is defined (S116).

  FIG. 3 is a diagram illustrating an example of a partial format of data after pattern data is defined for each SF area in the first embodiment. FIG. 3 shows an example where the number of repetitions k is the same in all SFGs in the processing area. In the data 10 after the SF group is set, each header is followed by grouped subfield groups, that is, subfield group (1), subfield group (2),..., Subfield group ( m) is defined. A repetition number k is defined as a part of the internal data of the header 12. Also, the internal data 20 of each subfield group defines subfield (1), subfield (2),..., Subfield (n) constituting the group. Then, in the internal data 30 of each subfield, following the coordinates (X, Y) of the SF area, pattern data of a graphic pattern arranged in the SF area, that is, pattern data (1),... Is defined.

  FIG. 4 is a diagram showing another example of a format of a part of data after pattern data is defined for each SF area in the first embodiment. FIG. 4 shows an example in which the number of repetitions k is different for each SFG in the processing area. In the data 10 after the SF group is set, the subfield groups that are grouped, that is, the subfield group (1), the subfield group (2),. A subfield group (m) is defined. And the repetition number k is defined in the internal data 22 of each subfield group. Then, following the repetition number k, subfield (1), subfield (2),..., Subfield (n) constituting the group are defined. Then, in the internal data 30 of each subfield, following the coordinates (X, Y) of the SF area, pattern data of a graphic pattern arranged in the SF area, that is, pattern data (1),... Is defined.

  As described above, in any case, the identifier of the repetition number k is defined as attribute information of the data of the SF group for each SF group. However, the present invention is not limited to this, and the data may be configured so that the repetition number k can be referred to for each SF group. In addition, here, as an example, a case where a number representing the repetition number itself is defined as an identifier is shown, but the identifier is not limited to this, and any identifier can be used. In this way, pattern data is defined for each SF area, and an identifier indicating the number of repetitions k when performing multiple drawing is defined in the data after the SF group is set.

  FIG. 5 is a diagram showing an example of the SF group in the first embodiment. In FIG. 5, the arrow shown with a dotted line has shown the drawing direction. FIG. 5 shows an example in which a certain processing area 40 is divided into four SF in the drawing direction and nine SF areas 60 in a direction orthogonal to the drawing direction. FIG. 5 shows a case where four SF groups 50a to 50d are set. Each SF group 50a to 50d draws the SF area 60 in the group in order from the start points 52a to 52d in the direction of the arrow. When the width (short direction) of the processing region 40 is set to a size that allows deflection of the main deflector 208, for example, the main deflector 208 aligns the electron beam 200 in the SF region 60 where the start point 52a of the SF group 50a is located. The figure pattern in the SF area 60 is drawn by deflecting the position of each shot by the sub deflector 209. Then, if the position of the electron beam 200 is shifted by the main deflector 208 by one SF area 60 in the direction of the arrow, and the figure pattern in the SF area 60 is drawn by the sub deflector 209 from that position. Good. These operations may be performed sequentially along the direction of the arrow. During these drawing operations, the XY stage 105 moves continuously, for example, relatively in the longitudinal direction of the processing region 40. FIG. 5 shows an example in which the SF group is set in the width unit of the processing area 40 when setting the SF group. However, the setting method is not limited to this.

  FIG. 6 is a diagram showing another example of the SF group in the first embodiment. In FIG. 6, an arrow indicated by a dotted line indicates a drawing direction. FIG. 6 shows an example of setting the SF group so as to include a case where the group changes in the middle of the width of the processing area 40. The other points are the same as in FIG. 5 and 6 described above all show the case where the drawing direction is directed in only one direction (forward direction: FWD), but the present invention is not limited to this.

  FIG. 7 is a diagram showing another example of the SF group in the first embodiment. In FIG. 7, the arrow shown with a dotted line has shown the drawing direction. FIG. 7 shows an example of setting the SF group so as to include a case where the group changes in the middle of the width of the processing area 40. Further, FIG. 7 shows a case where the drawing directions of SF columns 60 adjacent to each other in the longitudinal direction of the processing region 40 are opposite to each other. That is, the drawing direction shows a case where the forward direction and the backward direction are directed in the reverse direction (forward direction: FWD−reverse direction: BWD). Other points are the same as in FIGS.

  As described above, the SF group can be variously set as long as it is a positional relationship in which a series of SF areas are continuously drawn.

  Here, Embodiment 1 shows a case where an identifier indicating the number of repetitions k is defined for each SF group. However, the present invention is not limited to this, and an identifier indicating the number of repetitions k is defined for each SF area. You may do it. Here, as in the case of the SF group, it is preferable to define the attribute information of the SF area. However, the present invention is not limited to this, and the data may be configured so that the repetition number k can be referenced for each SF area. In that case, the SFG setting unit 126 and the SFG setting step (S116) may be omitted. The SF dividing unit 124 may define an identifier indicating the repetition number k for each SF area. Therefore, in the first embodiment, it is only necessary to define an identifier indicating the number of repetitions k when performing multiple drawing in the data after pattern data is defined for each SF area.

  Next, the data output unit 128 defines the pattern data for each SF area, and the data after the SF group is set is output to the storage device 144 and stored (S118).

  Next, in the shot conversion step (S120), shot data for shooting the electron beam with the drawing apparatus is generated. The generated shot data is copied according to the number of repetitions k when performing multiple drawing. As an internal process of the shot conversion process (S120), the data input unit 132 reads data from the storage device 144 (S122). Then, the shot data generation unit 134 converts pattern data of a plurality of graphic patterns defined in the layout data, and generates shot data for shooting the electron beam 200 with the drawing apparatus 100 (S124). The multiple development processing unit 136 (copying unit) refers to the identifier of the repetition number k for each SF group, and copies the generated shot data according to the repetition number k when performing multiple drawing (S126). Thereby, the shot data for the total drawing N times of the originally generated shot data for one drawing and the copied (N-1) times of shot data are generated. Then, the data output unit 138 outputs the shot data for the number of times of multiple drawing (N times) to the storage device 146 and stores it (S128). Needless to say, when the multiplicity is 1, k = 0, so that no copy is made.

  As described above, data processing for one drawing is continued until shot data for one drawing is generated. Then, after the shot data for one drawing is generated, the necessary number of shot data is copied. Thereby, the data amount in each process before that can be reduced significantly. Specifically, in simple multiple drawing, shot data is copied in a multiplicity development processing step (S126) that is near the final step in the data processing flow. Therefore, the data amount in each process before that can be the same as in the case of multiplicity 1. Therefore, conventionally, the processing time in each process from the process in which the data amount is increased to the shot data generation process (S124) can be significantly shortened compared to the conventional process. Further, the storage time to the storage device 144 and the transfer time from the storage device 144 on the way can be significantly shortened compared to the conventional case because the data amount remains small. Therefore, resources (for example, CPU, memory, and storage device) necessary for such data processing can be reduced in size or capacity can be reduced. Furthermore, although not shown, when a function for checking data after processing in each process is added, resources (for example, a CPU and a memory) necessary for the function are also reduced in size or reduced in capacity. Can do.

  Then, as a drawing process, the control circuit 148 sequentially reads shot data to be used for the corresponding number of times from the storage device 146, and the control circuit 148 controls the drawing unit 150 based on the shot data. Then, the drawing unit 150 performs desired simple multiple drawing on the sample 101 using shot data corresponding to the number of times of multiple drawing. Specifically, each drawing operation operates as follows.

  The electron beam 200 emitted from the electron gun 201 illuminates the entire first aperture 203 having, for example, a rectangular hole by the illumination lens 202. Here, the electron beam 200 is first formed into a rectangular shape, for example. Then, the electron beam 200 of the first aperture image that has passed through the first aperture 203 is projected onto the second aperture 206 by the projection lens 204. The position of the first aperture image on the second aperture 206 is controlled by the deflector 205, and the beam shape and size can be changed. Then, the electron beam 200 of the second aperture image that has passed through the second aperture 206 is focused by the objective lens 207 and is deflected by the main deflector 208 onto the desired SF region in the desired processing region, By deflecting to a desired position in the SF region by the deflector 209, the desired position is irradiated.

  Here, multiple drawing is performed on the sample 101 using shot data corresponding to the number of drawing times of multiple drawing so that drawing of all SF groups located in the processing region is performed in each drawing when performing simple multiple drawing. Is preferable. If the interval for repeating multiple drawing is too short, the next drawing may be performed before the heat stored in the resist on the sample 101 during the previous drawing is released. If drawing is performed with heat remaining in the resist, misalignment is likely to occur. Therefore, it is preferable that the time available for heat radiation is long. It is possible to perform multiple drawing for each SF group for the number of times of drawing, and then perform drawing for the next SF group. In such a case, the heat still stored in the previous drawing remains in the resist when performing the next drawing. It may be. On the other hand, the repetition interval can be increased by drawing a series of all SF groups located within the entire processing region. Therefore, the time that can be used for heat dissipation can be secured. Therefore, the next drawing can be performed in a state where the heat of the resist is dissipated.

  In the above description, what is described as “to part” or “to process” can be configured by a computer-operable program. Or you may make it implement by not only the program used as software but the combination of hardware and software. Alternatively, a combination with firmware may be used. When configured by a program, the program is recorded on a recording medium (storage device) such as a magnetic disk device, a magnetic tape device, an FD, or a ROM (read only memory).

  The embodiments have been described above with reference to specific examples. However, the present invention is not limited to these specific examples.

  In addition, although descriptions are omitted for parts and the like that are not directly required for the description of the present invention, such as a device configuration and a control method, a required device configuration and a control method can be appropriately selected and used. For example, although the description of the control unit configuration for controlling the drawing apparatus 100 is omitted, it goes without saying that the required control unit configuration is appropriately selected and used.

  In addition, all drawing apparatuses and drawing data processing methods that include elements of the present invention and that can be appropriately modified by those skilled in the art are included in the scope of the present invention.

1 is a conceptual diagram illustrating a configuration of a drawing apparatus according to Embodiment 1. FIG. FIG. 6 is a diagram illustrating a flowchart of each process of drawing data processing and a comparison of data amount in each process when the multiplicity is 1 and the simple multiplicity is N in the first embodiment. 6 is a diagram showing an example of a format of a part of data after pattern data is defined for each SF area in the first embodiment. FIG. It is a figure which shows another example of the format of a part of data after pattern data is defined for every SF area | region in Embodiment 1. FIG. It is a figure which shows an example of the SF group in Embodiment 1. FIG. It is a figure which shows another example of SF group in Embodiment 1. FIG. It is a figure which shows another example of SF group in Embodiment 1. FIG. It is a conceptual diagram for demonstrating operation | movement of the conventional variable shaping type | mold electron beam drawing apparatus. It is a figure which shows the flowchart of each process of data processing in the case of multiplicity 1 and the case of simple multiplicity N, and the data amount comparison in each process.

Explanation of symbols

10 Data 12 Header 20, 22, 30 Internal data 40 Processing area 50 SF group 52 Start point 60 SF area 100 Drawing apparatus 101, 340 Sample 102 Electron barrel 103 Drawing chamber 105 XY stage 110, 120, 130 Control computer unit 112, 122 , 132 Data input unit 114 Localization processing unit 116, 128, 138 Data output unit 124 SF division unit 126 SFG setting unit 134 Shot data generation unit 136 Multiple expansion processing units 140, 142, 144, 146, 240, 242, 244, 246 Storage device 148 Control circuit 150 Drawing unit 160 Control unit 200 Electron beam 201 Electron gun 202 Illumination lenses 203 and 410 First aperture 206 and 420 Second aperture 204 Projection lens 205 Deflector 207 Objective lens 208 Deflector 209 sub-deflector 330 electron beam 411 opening 421 variable-shaped opening 430 a charged particle source

Claims (5)

A step of inputting layout data in which a plurality of graphic patterns are defined in a chip area and storing the layout data in a storage device;
Defining the pattern data of the graphic pattern arranged in each small region for each small region of the plurality of small regions into which the chip region is divided, for one drawing when performing multiple drawing;
Converting the pattern data defined for one drawing at the time of performing the multiple drawing, and generating shot data for one drawing for shooting a charged particle beam on a sample;
A step of copying the generated shot data according to the number of repetitions when performing multiple drawing;
Outputting the shot data for the number of drawing times of the multiple drawing;
A method for processing drawing data, comprising: Before SL The data after the pattern data has been defined for each small region, the processing method of writing data according to claim 1, wherein the identifier indicating the number of repetitions is defined. Further comprising the step of setting a plurality of small area groups composed of at least one small area,
3. The drawing data processing method according to claim 2, wherein the identifier is defined for each of the small area groups. A step of inputting layout data in which a plurality of graphic patterns are defined in a chip area and storing the layout data in a storage device;
Distributing the layout data to a plurality of processing areas for distributed processing of the layout data;
For each small area of a plurality of small areas divided by a size smaller than the processing area, the pattern data of the graphic pattern arranged in each small area is drawn only once for multiple drawing. A process to define;
Setting a plurality of small area groups composed of at least one of the small areas;
For each processing region, converting the pattern data to generate shot data for one drawing for shooting a charged particle beam;
A step of copying the generated shot data according to the number of repetitions when performing multiple drawing for each small area group;
The multiple drawing is performed on the sample using the shot data corresponding to the number of drawing times of the multiple drawing so that drawing of all the small region groups located in the processing region is performed in each drawing at the time of performing the multiple drawing. A process of performing
A drawing method characterized by comprising: A storage unit for inputting and storing layout data in which a plurality of graphic patterns are defined in a chip area;
For each subfield area of the plurality of subfield areas into which the chip area is divided, a subfield area that defines the pattern data of the graphic pattern arranged in each subfield area for one drawing when performing multiple drawing A dividing section;
A shot data generation unit that converts pattern data defined for one drawing at the time of performing the multiple drawing, and generates shot data for one drawing for shooting a charged particle beam on a sample;
In accordance with the number of repetitions when performing multiple drawing, a copying unit that copies the generated shot data;
Using the shot data for the number of drawing times of the multiple drawing, a drawing unit that performs the multiple drawing on a sample;
A drawing apparatus comprising:

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