JP2012043972A - Charged particle beam lithography apparatus and charged particle beam lithography method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To reduce a drawing time in the case of multiple drawing.SOLUTION: The charge particle beam lithography apparatus according to one embodiment includes: an XY stage 105 for mounting a sample thereon and continuously moving at the time of drawing; an SF division unit 112 for SF-dividing the sample for the first-time drawing in the case of multiple drawing, and for SF-dividing the sample into SF regions again for the second-time drawing; a sequence control unit 114 for controlling the drawing operation to alternately repeat the first-time drawing and the second-time drawing, in a unit of each subfield region group constituted of a plurality of subfield regions at least aligned in the direction orthogonal to a stage movement direction; and a drawing unit 150 for alternately repeating the first-time drawing and the second-time drawing in a unit of each subfield region group, using charged particle beams in the state that the stage continuously moves in a prescribed direction.

Description

  The present invention relates to a charged particle beam drawing apparatus and a charged particle beam drawing method, and for example, relates to a drawing method and apparatus used for multiple drawing using an electron beam.

  Lithography technology, which is responsible for the progress of miniaturization of semiconductor devices, is an extremely important process for generating a pattern among semiconductor manufacturing processes. In recent years, with the high integration of LSI, circuit line widths required for semiconductor devices have been reduced year by year. In order to form a desired circuit pattern on these semiconductor devices, a highly accurate original pattern (also referred to as a reticle or a mask) is required. Here, the electron beam (electron beam) drawing technique has an essentially excellent resolution, and is used for producing a high-precision original pattern.

FIG. 8 is a conceptual diagram for explaining the operation of a conventional variable shaping type electron beam drawing apparatus.
The variable shaped electron beam (EB) drawing apparatus operates as follows. In the first aperture 410, a rectangular opening for forming the electron beam 330, for example, a rectangular opening 411 is formed. Further, the second aperture 420 is formed with a variable shaping opening 421 for shaping the electron beam 330 having passed through the opening 411 of the first aperture 410 into a desired rectangular shape. The electron beam 330 irradiated from the charged particle source 430 and passed through the opening 411 of the first aperture 410 is deflected by the deflector, passes through a part of the variable shaping opening 421 of the second aperture 420, and passes through a predetermined range. The sample 340 mounted on a stage that continuously moves in one direction (for example, the X direction) is irradiated. That is, the drawing area of the sample 340 mounted on the stage in which the rectangular shape that can pass through both the opening 411 of the first aperture 410 and the variable shaping opening 421 of the second aperture 420 is continuously moved in the X direction. Drawn on. A method of creating an arbitrary shape by passing both the opening 411 of the first aperture 410 and the variable shaping opening 421 of the second aperture 420 is referred to as a variable shaping method (VSB method).

  In such electron beam drawing, a multiple drawing method is generally adopted in which drawing is performed by overlapping drawing patterns a plurality of times. In the multiple drawing method, the first drawing and the second drawing are performed in the stripe area unit in which the chip area is virtually divided, or the first drawing and the second drawing are performed in units of individual subfields in the stripe area. A case has been proposed in which a drawing operation is advanced while performing alternately (see, for example, Patent Document 1).

  As the multiplicity increases, the drawing time increases accordingly. With recent miniaturization of patterns, it is desired to shorten the drawing time. Therefore, it is desired to shorten the drawing time when performing such multiple drawing.

JP 2008-117871 A

  As described above, while it is desired to shorten the drawing time, for example, if the first drawing and the second drawing are performed in units of stripe areas as described above, the stage travel distance for the first drawing At least the stage travel distance for the second drawing is required. Further, if the first drawing and the second drawing are performed in the same direction (FWD: forward-FWD: forward), the stage position is returned to perform the second drawing after the first drawing is completed. Therefore, the stage travel distance is required. Therefore, if the length of the stripe region is L, 3L in the FWD-FWD method, the first drawing and the second drawing are performed in the reverse direction (FWD: forward-BWD: backward), and 2L stage travel is performed. Arise. There is a problem that the length of the stage travel distance leads to a delay in drawing time. In addition, when performing multiple drawing, the SF position may be set slightly shifted between the first drawing and the second drawing. In such a case, as described above, when the drawing operation is performed while alternately performing the first drawing and the second drawing for each SF unit, after the first drawing and the second drawing of the first SF are completed. When drawing the second SF, the deflection position is returned in the direction opposite to the drawing direction. When the stage continuously moves, depending on the position of the SF, the second SF may be out of the deflectable range due to the movement of the stage.

  In view of the above, an object of the present invention is to overcome the above-described problems and reduce the drawing time when multiple drawing is performed.

A charged particle beam drawing apparatus according to one embodiment of the present invention includes:
A stage on which a sample to be drawn is placed and continuously moved during drawing,
The drawing area of the sample is divided into a plurality of mesh-like subfield areas for the first drawing when performing multiple drawing, and the drawing area of the sample is again divided into a plurality of mesh-like subfield areas for the second drawing. A dividing unit to be divided into
Control for controlling the drawing operation so as to alternately repeat the first drawing and the second drawing for each subfield region group composed of a plurality of subfield regions arranged in a direction orthogonal to the moving direction of the stage. And
With the stage continuously moving in a predetermined direction, using a charged particle beam, a drawing unit that alternately repeats the first drawing and the second drawing for each subfield region group;
It is provided with.

  With such a configuration, multiple drawing can be performed in one run even if the stage does not return. Therefore, the stage travel distance can be shortened. Moreover, it is possible to eliminate the return of the deflection position depending on how the subfield region group is set.

The drawing unit
A first deflector that deflects the charged particle beam to align with each subfield region;
A second deflector for deflecting the charged particle beam to a desired position within the aligned subfield region;
Have
The drawing unit virtually divides the drawing region of the sample into strips with a width that can be deflected by the first deflector while alternately repeating the first drawing and the second drawing for each subfield region group. Multiple drawing in the striped area,
As the subfield region group, it is preferable to use a subfield region row arranged in a direction orthogonal to the moving direction of the stage in each stripe region.

Alternatively, the drawing unit
A first deflector that deflects the charged particle beam to align with each subfield region;
A second deflector for deflecting the charged particle beam to a desired position within the aligned subfield region;
Have
The drawing unit virtually divides the drawing region of the sample into strips with a width that can be deflected by the first deflector while alternately repeating the first drawing and the second drawing for each subfield region group. Multiple drawing in the striped area,
As the subfield region group, a plurality of subfield region sequences obtained by combining a plurality of subfield region sequences arranged in a direction orthogonal to the moving direction of the stage in each stripe region may be used.

Alternatively, the drawing unit
A first deflector that deflects the charged particle beam to align with each subfield region;
A second deflector for deflecting the charged particle beam to a desired position within the aligned subfield region;
Have
The drawing unit virtually divides the drawing region of the sample into strips with a width that can be deflected by the first deflector while alternately repeating the first drawing and the second drawing for each subfield region group. Multiple drawing in the striped area,
As a subfield region group, a part of a plurality of subfield region columns obtained by combining a plurality of subfield region columns arranged in a direction orthogonal to the moving direction of the stage in each stripe region may be used. is there.

The charged particle beam drawing method of one embodiment of the present invention includes:
The drawing area of the sample is divided into a plurality of mesh-like subfield areas for the first drawing when performing multiple drawing, and the drawing area of the sample is again divided into a plurality of mesh-like subfield areas for the second drawing. Dividing the process into
A plurality of specimens placed on a drawing target and arranged in a direction at least perpendicular to the moving direction of the stage using a charged particle beam in a state in which a stage that continuously moves during drawing is continuously moving in a predetermined direction. A step of alternately repeating the first drawing and the second drawing for each subfield region group composed of subfield regions;
It is provided with.

  According to the present invention, it is possible to reduce the drawing time even when multiple drawing is performed.

1 is a conceptual diagram illustrating a configuration of a drawing apparatus according to Embodiment 1. FIG. FIG. 6 is a conceptual diagram for explaining a drawing procedure in the first embodiment. 5 is a conceptual diagram for explaining an SF layer in the first embodiment. FIG. 6 is a diagram illustrating an example of a drawing order according to Embodiment 1. FIG. It is the conceptual diagram which compared the case where it draws by Embodiment 1 and the case where it draws alternately by SF unit. FIG. 10 is a diagram illustrating an example of a drawing order in the second embodiment. FIG. 10 is a diagram illustrating an example of a drawing order in the third embodiment. It is a conceptual diagram for demonstrating operation | movement of the conventional variable shaping type | mold electron beam drawing apparatus.

  Hereinafter, in the embodiment, a configuration using an electron beam will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam, and a beam using charged particles such as an ion beam may be used. Further, a variable shaping type drawing apparatus will be described as an example of the charged particle beam apparatus.

Embodiment 1 FIG.
FIG. 1 is a conceptual diagram illustrating a configuration of a drawing apparatus according to the first embodiment. In FIG. 1, the drawing apparatus 100 includes a drawing unit 150 and a control unit 160. The drawing apparatus 100 is an example of a charged particle beam drawing apparatus. In particular, it is an example of a variable shaping type drawing apparatus. The drawing unit 150 includes an electron column 102 and a drawing chamber 103. In the electron column 102, there are an electron gun 201, an illumination lens 202, a first aperture 203, a projection lens 204, a deflector 205, a second aperture 206, an objective lens 207, a main deflector 208, and a sub deflector 209. Has been placed. An XY stage 105 is disposed in the drawing chamber 103. On the XY stage 105, a sample 101 such as a mask to be drawn at the time of drawing is arranged. The sample 101 includes an exposure mask for manufacturing a semiconductor device. Further, the sample 101 includes mask blanks on which nothing has been drawn yet.

  The control unit 160 includes a control computer unit 110, a memory 111, a control circuit 120, and storage devices 140 and 142 such as a magnetic disk device. The control computer unit 110, the memory 111, the control circuit 120, and the storage devices 140 and 142 such as a magnetic disk device are connected to each other via a bus (not shown).

  In the control computer unit 110, an SF dividing unit 112, an order control unit 114, and a drawing data processing unit 116 are arranged. The SF dividing unit 112, the sequence control unit 114, and the drawing data processing unit 116 may be configured by hardware such as an electric circuit, or may be configured by software such as a program that executes these functions. Alternatively, it may be configured by a combination of hardware and software. Information input / output to / from the SF dividing unit 112, the order control unit 114, and the drawing data processing unit 116 and information being calculated are stored in the memory 111 each time. In particular, since the drawing data processing unit 116 can have an enormous amount of data processing, it is preferable that the drawing data processing unit 116 includes a plurality of CPUs and a plurality of memories (not shown).

  Chip data serving as layout data (drawing data) is input from the outside of the apparatus and stored in the storage device 140. The chip is composed of a plurality of graphic patterns.

  Here, FIG. 1 shows a configuration necessary for explaining the first embodiment. The drawing apparatus 100 may normally have other necessary configurations. For example, a multi-stage deflector having two main stages of the main deflector 208 and the sub-deflector 209 is used for position deflection. However, the position deflection may be performed by a multi-stage deflector having three or more stages. .

  FIG. 2 is a conceptual diagram for explaining a drawing procedure according to the first embodiment. In the drawing apparatus 100, the drawing area of the sample 101 is virtually divided into a plurality of strip-like stripe areas 20 and 22. In FIG. 2, for example, a case where one chip indicated by the chip region 10 is drawn on the sample 101 is illustrated. Of course, a plurality of chips may be drawn on the sample 101. The widths of the stripe regions 20 and 22 are divided by a width slightly smaller than the width that can be deflected by the main deflector 208. In the multiple drawing, there are cases where the stripe regions 20 and 22 are slightly shifted between the first drawing and the second drawing. In the example of FIG. 2, a stripe region 20 for the first drawing and a stripe region 22 for the second drawing are shown. By shifting, the pattern joining accuracy can be improved between the stripe regions and between the SFs in the stripe regions. When drawing on the sample 101, the XY stage 105 is continuously moved in the x direction, for example. The electron beam 200 irradiates one stripe region 20 and 22 while continuously moving in this way. The movement of the XY stage 105 in the X direction is a continuous movement, and at the same time, the main deflector 208 causes the shot position of the electron beam 200 to follow the stage movement. Further, the drawing time can be shortened by continuously moving. Further, the drawing time can be further shortened by moving the XY stage 105 at a variable speed such as a relatively slow speed at which drawing can be performed in a dense pattern area and a relatively fast speed in a rough area. be able to. When the drawing of one stripe region 20, 22 is completed, the XY stage 105 is stepped in the y direction to perform the drawing operation of the next stripe region 20, 22 in the x direction (for example, the opposite direction this time). The moving time of the XY stage 105 can be shortened by advancing the drawing operation of the stripe regions 20 and 22 so as to meander.

  First, as the SF dividing step, the SF dividing unit 112 divides the drawing area of the sample 101 into a plurality of mesh-like subfield (SF) areas 30 for the first drawing at the time of multiple drawing. The drawing area of the sample 101 is again divided into a plurality of mesh-like subfield (SF) areas 40 for drawing.

  FIG. 3 is a conceptual diagram for explaining the SF layer in the first embodiment. When drawing, the process proceeds for each stripe region 20. Therefore, in each stripe region 20 for the first drawing, a plurality of SF regions 30 arranged in a mesh form a first layer. An SF layer for the second drawing is formed. Similarly, in each stripe region 22 for the second drawing, an SF layer for the second drawing in which a plurality of SF regions 40 form a layer (layer) is formed. In FIG. 3, the SF layer for the first drawing and the SF layer for the second drawing are shifted by a dimension c1 smaller than the SF size in the y direction and a dimension c2 smaller than the SF size in the x direction. Is done. For example, in the case of drawing twice (multiplicity N = 2), it is shifted in the x and y directions by 1/2 of the SF size. By shifting, the pattern joining accuracy can be improved between the stripe regions and between the SFs in the stripe regions. Further, the division width (division height) h in the y direction of each of the stripe regions 20 and 22 is configured to be smaller than the main deflection width D that can be deflected by the main deflector 208. Here, both the first drawing stripe region 20 and the second drawing stripe region 22 which are arranged in a shifted manner are contained within the deflectable range. That is, D ≧ h + c1. By controlling to such a size, it is possible to draw both the first drawing stripe region 20 and the second drawing stripe region 22 while continuously moving the XY stage 105 in the x direction. it can. In other words, both the first drawing stripe area 20 and the second drawing stripe area 22 can be drawn by one run of drawing without returning the XY stage 105.

  The drawing data processing unit 116 sequentially reads the drawing data from the storage device 140 for each predetermined area, and performs shot data by performing a plurality of stages of data processing. At that time, a pattern is developed in each SF area, and shot data for each SF is generated. The generated shot data is temporarily stored in the storage device 142 sequentially.

  Then, for each stripe, drawing is performed according to the SF order controlled by the order control unit 114.

  FIG. 4 is a diagram illustrating an example of the drawing order in the first embodiment. In the example of FIG. 4, the order control unit 114 performs, for each stripe, the SF region group unit composed of a plurality of SF regions arranged in the direction (y direction) orthogonal to the moving direction (x direction) of the XY stage 105. The drawing operation is controlled so as to alternately repeat the first drawing and the second drawing. As shown in FIG. 4 (a), the control contents are as follows. First, in the first column of the SF layer (first layer) for the first drawing from the lower left SF region 30 in the y direction. Draw in order. After all the first column of the SF layer first layer in the target stripe region 20 has been drawn, this time, as shown in FIG. 4B, the second drawing SF layer (second layer) Are drawn in order from the lower left SF area 40 in the y direction. After the first column of the second layer of the SF layer in the target stripe region 22 has been drawn, this time, as shown in FIG. 4C, the SF layer (first layer) for the first drawing. The second column is drawn sequentially from the lower left SF area 30 in the y direction. Then, after all the second columns of the first SF layer in the target stripe region 20 are drawn, this time, as shown in FIG. 4D, the SF layer for the second drawing (second layer). Are drawn in order from the lower left SF area 40 in the y direction. Similarly, the first drawing and the second drawing are alternately repeated for each SF column, and one stripe region 20 and 22 is drawn as shown in FIG.

  Then, as a drawing process, the drawing unit 150 uses the electron beam 200 in the state where the XY stage 105 is continuously moving in the x direction (predetermined direction), as shown in FIG. The first drawing and the second drawing are alternately repeated. Specifically, it operates as follows.

  The electron beam 200 emitted from the electron gun 201 (emission unit) illuminates the entire first aperture 203 having a rectangular hole, for example, a rectangular hole, by the illumination lens 202. Here, the electron beam 200 is first formed into a rectangle, for example, a rectangle. Then, the electron beam 200 of the first aperture image that has passed through the first aperture 203 is projected onto the second aperture 206 by the projection lens 204. The deflector 205 controls the deflection of the first aperture image on the second aperture 206 so that the beam shape and size can be changed. Then, the electron beam 200 of the second aperture image that has passed through the second aperture 206 is focused by the objective lens 207 and deflected by the main deflector 208 and the sub deflector 209 controlled by the deflection control circuit 120. The desired position of the sample 101 placed on the continuously moving XY stage 105 is irradiated. FIG. 1 shows a case in which multi-stage deflection of main and sub two stages is used for position deflection. In such a case, the main deflector 208 deflects the electron beam 200 of the corresponding shot while following the stage movement to the reference position of the subfield (SF), which is a small area obtained by virtually dividing the stripe area, and the sub deflector 209 What is necessary is just to deflect the beam of the shot concerned concerning each irradiation position in SF. At that time, the deflection control circuit 120 sequentially reads out the corresponding shot data from the storage device 142 in the set SF drawing order, and controls the deflection positions of the main deflector 208 and the sub deflector 209.

  If the drawing operation proceeds in the drawing order as described above, the first drawing and the second drawing can be performed continuously by running for one drawing without returning the position of the XY stage 105. Therefore, the distance traveled by the XY stage 105 can be at least approximately halved as compared with the conventional case where the stage travel for the stripe length is required for the first drawing and the second drawing, respectively. Compared to the conventional case where the first drawing and the second drawing are performed by the FWD-BWD method, in this embodiment, as described above, the distance traveled by the XY stage 105 can be approximately halved. Furthermore, compared to the case where the first drawing and the second drawing are performed by the FWD-FWD method, in this embodiment, the distance traveled by the XY stage 105 can be reduced to approximately １ ／. Here, in the conventional case where the first drawing and the second drawing are performed by the FWD-BWD method, it is difficult to double the speed of each stage. As a result, the drawing time is longer due to the longer stage travel distance. Will increase. On the other hand, in the first embodiment, since the travel distance can be at least approximately halved, the drawing time can be reduced even when multiple drawing is performed.

  FIG. 5 is a conceptual diagram comparing the case of drawing according to Embodiment 1 and the case of drawing alternately in SF units. As shown in FIG. 5A, when alternately drawing in SF units, after drawing the first SF (1A) of the SF layer (first layer) for the first drawing, The deflection position is advanced to draw the first SF (2A) of the second drawing SF layer (second layer). At that time, the deflection angle of the main deflector 208 becomes smaller because the deflection position is advanced. Next, after drawing the first SF (2A) of the second drawing SF layer (second layer), the deflection position is returned to the drawing direction and the first drawing SF layer ( The second SF (1B) of the first layer) is drawn. At that time, the deflection angle of the main deflector 208 is increased because the deflection position is returned. That is, the swing width in the main deflector 208 is increased. Similarly, after drawing the second SF (1B) of the first drawing SF layer (first layer), the deflection position is advanced with respect to the drawing direction, and the second drawing SF layer is drawn. The second SF (2B) of (second layer) is drawn. Next, after drawing the second SF (2B) of the second drawing SF layer (second layer), the deflection position is returned to the drawing direction, and the first drawing SF layer ( The third SF (1C) of the first layer) is drawn. As described above, drawing is performed sequentially. Here, the main deflector 208 adjusts the deflection position to the corresponding SF area while following the progress of the continuously moving XY stage 105. The deflectable range (main deflection area) of the main deflector 208 is as follows. limited. For example, after the region 21 with a dense pattern is drawn, the deflection angle θ may reach the vicinity of the limit of the deflectable range of the main deflector 208. For example, if the deflection position for drawing the SF (for example, 2B) of the SF layer for the second drawing has reached the vicinity of the deflectable range limit of the main deflector 208, the next drawing is scheduled. Even if it is desired to return the deflection position to draw the SF (for example, 1C) of the SF layer for the first drawing, there is a possibility that the deflection range is exceeded and the deflection cannot be made. That is, there may be a case where the deflection angle of the main deflector 208 cannot be increased from θ1 to θ2. In such a case, the stage position must be returned to draw the SF (for example, 1C) of the SF layer for the first drawing.

  On the other hand, when drawing is performed in units of SF rows as in the first embodiment, the deflection position is not returned as shown in FIG. That is, after drawing the first SF (1A) of the first drawing SF layer (first layer), SF (1B), SF (1C), SF (1D) of the same SF row,. Draw all SF areas in the same SF row as Therefore, the deflection angle of the main deflector 208 at that time is only increased by the stage following amount. Next, after drawing the first SF (2A) of the SF layer for drawing for the second time (second layer), SF (2B), SF (2C), SF (2D),. ... All SF areas in the same SF row as that are drawn are drawn. Therefore, for example, even if the deflection position for drawing the SF (for example, 2B) of the SF layer for the second drawing has reached the vicinity of the deflectable range limit of the main deflector 208, the same SF after that In order to draw SF (2C), SF (2D),... In the row, the XY stage 105 may be stopped or decelerated to a speed that does not exceed the deflection possible range limit of the main deflector 208. Therefore, there is no need to return the stage position. Therefore, the drawing time can be reduced accordingly.

  Here, in the above-described example, the case of drawing twice (multiplicity N = 2) is shown as an example, but it goes without saying that the drawing may be three times or more (multiplicity N ≧ 3). In any case, drawing time can be shortened by drawing in units of SF columns.

Embodiment 2. FIG.
Although the first embodiment has described the configuration in which the first drawing and the second drawing are alternately repeated in units of SF groups formed by one SF row, the present invention is not limited to this. In the second embodiment, a configuration will be described in which the first drawing and the second drawing are alternately repeated with an SF group including a plurality of SF rows as a unit. The configuration of the drawing apparatus is the same as in FIG. The contents other than those described below are the same as those in the first embodiment.

  FIG. 6 is a diagram illustrating an example of a drawing order according to the second embodiment. In the example of FIG. 6, the order control unit 114 collects a plurality of SF columns composed of a plurality of SF regions arranged in the direction (y direction) orthogonal to the moving direction (x direction) of the XY stage 105 for each stripe. The drawing operation is controlled so that the first drawing and the second drawing are alternately repeated for each SF area group. As shown in FIG. 6A, the control contents are as follows. First, in the first row of the SF layer (first layer) for the first drawing, from the SF area 30 at the lower left to the y direction. Drawing is performed, and then the second column is sequentially drawn from the lower left SF area 30 in the y direction. Then, after all the first and second columns of the first SF layer in the target stripe region 20 are drawn as shown in FIG. 6B, this time, as shown in FIG. The first row of the SF layer for drawing (second layer) is drawn in order from the lower left SF region 40 in the y direction, and then the second row is drawn in order from the lower left SF region 40 in the y direction. To do. Then, after all the first and second columns of the second SF layer in the target stripe area 22 are drawn as shown in FIG. 6D, this time, as shown in FIG. Similarly, the third and fourth columns of the SF layer for drawing (first layer) are sequentially drawn. After all the third and fourth columns of the first SF layer in the target stripe region 20 are drawn, this time, as shown in FIG. 6F, the second drawing SF layer (two layers) is drawn. The third and fourth columns of (eye) are similarly drawn in order. Similarly, the first drawing and the second drawing are alternately repeated for each SF region group with two SF columns as SF region groups, and as shown in FIG. 22 is drawn.

  In the example of FIG. 6, the two SF rows are set as SF region groups that alternately repeat the first drawing and the second drawing. However, if the main SF is within the deflectable range of the main deflector 208, three or more The SF row may be an SF region group.

  As a drawing process, the drawing unit 150 uses the electron beam 200 in a state where the XY stage 105 is continuously moving in the x direction (predetermined direction), as shown in FIG. Thus, the first drawing and the second drawing are repeated alternately.

  As described above, if the drawing operation is advanced in the drawing order in the second embodiment, the first drawing and the second drawing can be continuously performed without returning the position of the XY stage 105. Therefore, it is possible to reduce the drawing time even when multiple drawing is performed.

Embodiment 3 FIG.
In the first and second embodiments, all the SF areas of the corresponding SF row are included in the SF group, but the present invention is not limited to this. In the third embodiment, a description will be given of a configuration in which the first drawing and the second drawing are alternately repeated with an SF group including a part of a plurality of SF rows as a unit. The configuration of the drawing apparatus is the same as in FIG. The contents other than those described below are the same as those in the first embodiment.

  FIG. 7 is a diagram illustrating an example of a drawing order according to the third embodiment. In the example of FIG. 7, the order control unit 114 determines, for each stripe, a part of the SF row composed of a plurality of SF regions arranged in the direction (y direction) orthogonal to the moving direction (x direction) of the XY stage 105. The drawing operation is controlled so that the first drawing and the second drawing are alternately repeated in units of a plurality of SF area groups. In this way, a part of a plurality of SF area sequences obtained by combining a part of each SF area sequence is used as a SF area group unit. As shown in FIG. 7 (a), the control contents are as follows. First, the first row of the SF layer (first layer) for the first drawing is moved from the SF area 30 at the lower left toward the y direction. Are drawn in order up to the number (k is a value smaller than the number of SFs constituting the SF column), and then, as shown in FIG. Draw in order up to. Then, after all the SF areas 30 up to the kth in the first and second columns of the SF layer 1 in the target stripe area 20 are drawn, the second time, as shown in FIG. The first row of the SF layer for drawing (second layer) is drawn in order from the SF region 40 at the lower left to the k-th in the y direction, and then the lower left of the second column as shown in FIG. Drawing is sequentially performed from the SF area 40 to the k-th direction in the y direction. Then, after all the SF areas 40 up to the k-th row in the first and second columns of the SF layer 2 in the target stripe area 22 are drawn, this time, as shown in FIG. The drawing is similarly performed in order from the (k + 1) -th SF area 30 to the 2k-th SF area 30 in the first and second columns of the SF layer (first layer) for drawing. Then, after all the (k + 1) th to 2kth SF regions 30 in the first and second columns of the SF layer 1 in the target stripe region 20 are drawn, this time, as shown in FIG. Drawing is similarly performed in order for the (k + 1) th to 2kth SF areas 40 in the first and second columns of the SF layer (second layer) for the second drawing. Similarly, the first drawing and the second drawing are alternately repeated for each SF area group with each of the k SF areas in the two SF rows as SF area groups, as shown in FIG. One stripe region 20, 22 is drawn.

  In the example of FIG. 7, the two SF regions in each of the two SF columns are used as the SF region group, and the SF region group in which the first drawing and the second drawing are alternately repeated is the main deflector 208. As long as it is within the deflectable range, two SF regions of three or more SF rows may be used as the SF region group. Similarly, three or more SF regions in three or more SF rows may be used as the SF region group.

  Then, as a drawing process, the drawing unit 150 uses the electron beam 200 in a state where the XY stage 105 is continuously moving in the x direction (predetermined direction), as shown in FIG. The first drawing and the second drawing are alternately repeated in some SF area group units.

  As described above, even if the drawing operation is advanced in the drawing order in the third embodiment, the first drawing and the second drawing can be performed continuously without returning the position of the XY stage 105. Therefore, it is possible to reduce the drawing time even when multiple drawing is performed.

  Here, although not shown, when each SF is drawn, the deviation of each SF position is corrected by calculating the deviation of each SF position in units of SF. In such a case, it takes time to calculate the deviation of each SF position in SF units. When the adjacent SF groups adjacent to each other are drawn together as in the configuration of the third embodiment, the positional deviation of one of the SF groups can be calculated without calculating the deviation of all the SF positions. For example, the error in the SF group can be reduced by using the same correction value.

  The embodiments have been described above with reference to specific examples. However, the present invention is not limited to these specific examples.

  In addition, although descriptions are omitted for parts and the like that are not directly required for the description of the present invention, such as a device configuration and a control method, a required device configuration and a control method can be appropriately selected and used. For example, although the description of the control unit configuration for controlling the drawing apparatus 100 is omitted, it goes without saying that the required control unit configuration is appropriately selected and used.

  In addition, all charged particle beam writing apparatuses and methods that include elements of the present invention and that can be appropriately modified by those skilled in the art are included in the scope of the present invention.

10 Chip area 20, 22 Stripe area 21 Area 30, 40 SF area 100 Drawing apparatus 101, 340 Sample 102 Electron barrel 103 Drawing chamber 105 XY stage 110 Control computer unit 111 Memory 112 SF dividing section 114 Sequence control section 116 Drawing data processing Unit 120 deflection control circuit 140, 142 storage device 150 drawing unit 160 control unit 200 electron beam 201 electron gun 202 illumination lens 203, 410 first aperture 204 projection lens 205 deflector 206, 420 second aperture 207 objective lens 208 main Deflector 209 Sub-deflector 330 Electron beam 411 Opening 421 Variable shaping opening 430 Charged particle source

Claims (5)

A stage on which a sample to be drawn is placed and continuously moved during drawing,
The drawing area of the sample is divided into a plurality of mesh-like subfield areas for the first drawing when performing multiple drawing, and the drawing area of the sample is newly divided into a plurality of mesh-like sub-fields for the second drawing. A division section for dividing the field area;
The drawing operation is controlled so that the first drawing and the second drawing are alternately repeated at least in units of subfield regions composed of a plurality of subfield regions arranged in a direction orthogonal to the moving direction of the stage. A control unit;
A drawing unit that alternately repeats the first drawing and the second drawing in units of the subfield regions in a state where the stage is continuously moving in a predetermined direction;
A charged particle beam drawing apparatus comprising: The drawing unit
A first deflector for deflecting the charged particle beam to align with each subfield region;
A second deflector for deflecting the charged particle beam to a desired position within the aligned subfield region;
Have
The drawing unit is a strip having a width that can deflect the drawing region of the sample by the first deflector while alternately repeating the first drawing and the second drawing in units of the subfield region group. Multiple drawing in the stripe area virtually divided into
2. The charged particle beam drawing apparatus according to claim 1, wherein a subfield region row arranged in a direction orthogonal to a moving direction of the stage in each stripe region is used as the subfield region group. The drawing unit
A first deflector for deflecting the charged particle beam to align with each subfield region;
A second deflector for deflecting the charged particle beam to a desired position within the aligned subfield region;
Have
The drawing unit is a strip having a width that can deflect the drawing region of the sample by the first deflector while alternately repeating the first drawing and the second drawing in units of the subfield region group. Multiple drawing in the stripe area virtually divided into
2. The charge according to claim 1, wherein a plurality of subfield region rows in which a plurality of subfield region rows arranged in a direction orthogonal to the moving direction of the stage in each stripe region are combined are used as the subfield region group. Particle beam drawing device. The drawing unit
A first deflector for deflecting the charged particle beam to align with each subfield region;
A second deflector for deflecting the charged particle beam to a desired position within the aligned subfield region;
Have
The drawing unit is a strip having a width that can deflect the drawing region of the sample by the first deflector while alternately repeating the first drawing and the second drawing in units of the subfield region group. Multiple drawing in the stripe area virtually divided into
As the subfield region group, a part of a plurality of subfield region columns obtained by combining a plurality of subfield region columns arranged in a direction orthogonal to the moving direction of the stage in each stripe region is used. The charged particle beam drawing apparatus according to claim 1. The drawing area of the sample is divided into a plurality of mesh-like subfield areas for the first drawing when performing multiple drawing, and the drawing area of the sample is newly divided into a plurality of mesh-like sub-fields for the second drawing. Dividing into field areas;
A sample to be drawn is placed, and the stage that moves continuously during writing is continuously moved in a predetermined direction, and is arranged in a direction at least orthogonal to the moving direction of the stage using a charged particle beam. A step of alternately repeating the first drawing and the second drawing for each subfield region group composed of a plurality of subfield regions;
A charged particle beam drawing method comprising:

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