JP2011029676A - Charged particle beam exposure method and device, charged particle beam exposure data generating method and program, and block mask - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a charged particle beam exposure method that improves the throughput. <P>SOLUTION: A charged particle beam exposure device includes a first aperture 65 which forms an electron beam emitted from an electron gun 64 into a rectangular having a predetermined size, a second aperture 66 which shapes the electron beam which is shaped into a rectangular having a predetermined size with the first aperture 65 into a rectangular having an arbitrary size, and a block mask 67 which shapes the electron beam which is shaped into the rectangular having an arbitrary size with the second aperture 66 into a pattern form for one-shot exposure. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a charged particle beam exposure method and apparatus used when manufacturing a semiconductor device and the like, and a charged particle beam exposure data creation method used when creating charged particle beam exposure data to be applied to the charged particle beam exposure apparatus. The present invention also relates to a program and a block mask that is mounted and used in a charged particle beam exposure apparatus.

  In the manufacturing process of a semiconductor device, exposure using ultraviolet light or an electron beam is performed to transfer a circuit pattern (circuit figure) of the semiconductor device to be manufactured to a resist applied to a wafer. Electron beam exposure is capable of transferring a finer pattern than ultraviolet light exposure, and is being developed further as a next-generation exposure method.

  The electron beam exposure method includes a variable rectangular exposure method in which patterns are transferred one by one by changing the size of the electron beam, and a batch exposure (block exposure) method in which a plurality of patterns are transferred in a batch. 18A and 18B are diagrams for explaining an electron beam exposure method, in which FIG. 18A shows the state of the electron beam exposure apparatus when variable rectangular exposure is performed, and FIG. 18B shows the state of the electron beam exposure apparatus when batch exposure is performed. Is shown conceptually.

  In FIG. 18, 1 is an electron gun that emits an electron beam, 2 is a first aperture that shapes the electron beam emitted from the electron gun 1 into, for example, a 5 μm square, and 3 is a rectangle that is formed with a first aperture 2. This is a second aperture for shaping the electron beam into an arbitrarily sized rectangle, and is used when variable rectangle exposure is performed.

  Reference numeral 4 denotes a block mask used when performing batch exposure. The block mask 4 is mounted with a plurality of pattern groups (hereinafter referred to as blocks) that collectively expose a 5 μm square area, for example. Reference numerals 5 and 6 denote two blocks in the block mask 4, reference numerals 7, 8, and 9 denote patterns (opening patterns) of the block 5, and reference numeral 10 denotes a wafer coated with a resist to be exposed.

  In the case of performing variable rectangular exposure, as shown in FIG. 18A, the second aperture 3 is used, and the electron beam emitted from the electron gun 1 is, for example, a 5 μm square by the first aperture 2. In addition, the resist is applied to the wafer 10 after being formed into a rectangular shape of any size by the second aperture 3.

  When performing batch exposure, as shown in FIG. 18B, the block mask 4 is used, and the electron beam emitted from the electron gun 1 is shaped into a rectangle of, for example, 5 μm square by the first aperture 2. Further, the block on the block mask 4 is irradiated to form a pattern shape of the block, and the resist applied to the wafer 10 is irradiated. Batch exposure requires fewer shots (number of exposures) than variable rectangular exposure, and can improve throughput (see, for example, Patent Document 1).

  The wafer manufacturing exposure data to be given to the electron beam exposure apparatus when performing batch exposure (data such as the position of the block to be used on the block mask and the irradiation position of the electron beam on the wafer) is, for example, a semiconductor device to be manufactured Design data (circuit pattern data) and exposure data for block mask manufacturing (data such as blocks mounted on the block mask and their positions), and design data and block mask manufacturing of semiconductor devices to be manufactured The exposure data for use is created using a basic pattern (see, for example, FIG. 4 of Patent Document 2).

  FIG. 19 is a diagram showing an example of a conventional semiconductor device design data creation method and block mask manufacturing exposure data creation method. In FIG. 19, 12 is a basic pattern group prepared for constructing various circuits, 13, 14 and 15 are semiconductor devices A, B, and C to be manufactured created by a designer using the basic pattern group 12. Design data.

  Reference numeral 16 denotes a basic pattern selected by the designer from the basic pattern group 12 and extracts exposure data for block mask manufacture for generating exposure data for manufacturing block masks. Reference numeral 17 denotes an exposure data generation apparatus for block mask manufacture 16. The generated block mask manufacturing exposure data 18 is a block mask manufactured using the block mask manufacturing exposure data 17.

  That is, when manufacturing the semiconductor devices A, B, and C, design data for the semiconductor devices A, B, and C is created on the one hand using the basic pattern group 12, and on the other hand, The basic pattern necessary for manufacturing the semiconductor devices A, B, and C is selected from the above, the block mask manufacturing exposure data generating device 16 generates the block mask manufacturing exposure data 17, and the block mask 18 is manufactured based on this. The

  FIG. 20 is a diagram showing an example of a conventional method for creating exposure data for wafer manufacture. (A) shows a case where the semiconductor device A is manufactured, (B) shows a case where the semiconductor device B is manufactured, (C) shows a case where the semiconductor device C is manufactured, 19 is an exposure data creation device for wafer manufacture, Reference numerals 20, 21, and 22 denote wafer manufacturing exposure data, and reference numeral 23 denotes an electron beam exposure apparatus.

  That is, when the semiconductor device A is manufactured, as shown in FIG. 20A, the wafer manufacturing exposure data creation device using the design data 13 of the semiconductor device A and the block mask manufacturing exposure data 17 is used. The wafer manufacturing exposure data 20 for manufacturing the semiconductor device A is created by 19. Then, the wafer manufacturing exposure data 20 and the block mask 18 are used, and the electron beam exposure apparatus 23 exposes the wafer 24 for manufacturing the semiconductor device A.

  Further, when the semiconductor device B is manufactured, as shown in FIG. 20B, the wafer manufacturing exposure data generating device using the design data 14 of the semiconductor device B and the block mask manufacturing exposure data 17 is used. The wafer manufacturing exposure data 21 for manufacturing the semiconductor device B is created by 19. Then, the wafer manufacturing exposure data 21 and the block mask 18 are used, and the electron beam exposure apparatus 23 exposes the wafer 25 for manufacturing the semiconductor device B.

  Further, when the semiconductor device C is manufactured, as shown in FIG. 20C, the wafer manufacturing exposure data generating device using the design data 15 of the semiconductor device C and the block mask manufacturing exposure data 17 is used. The wafer manufacturing exposure data 22 for manufacturing the semiconductor device C is created by 19. Then, the wafer manufacturing exposure data 22 and the block mask 18 are used, and the electron beam exposure apparatus 23 exposes the wafer 26 for manufacturing the semiconductor device C.

  FIG. 21 is a diagram showing another example of a conventional exposure data creation method for manufacturing a block mask. In FIG. 21, 28 is a control file that describes the specifications of the blocks to be mounted on the block mask (parameters such as pattern size and inter-pattern distance) in a predetermined format, and 29 is for inputting the contents of the control file 28 to produce the block mask. It is an exposure data creation apparatus for manufacturing block masks that creates exposure data.

  Reference numeral 30 denotes block mask manufacturing exposure data created by the block mask manufacturing exposure data creation device 29, and reference numeral 31 denotes a block mask manufactured using the block mask manufacturing exposure data 30. As described above, the exposure data for manufacturing the block mask can be created by using the control file 28 in which the specification of the block mounted on the block mask is described in a predetermined format.

  FIG. 22 is a diagram for explaining parameters described in the control file 28. In FIG. 22, 33 is a block on the block mask, and 34 is a pattern of the block 33. In this example, the patterns 34 are arranged at equal intervals vertically and horizontally. In this case, when the specification of the block 33 is described in the control file 28, the size L1 in the X direction, the size L2 in the Y direction, and the inter-pattern size L3 of the pattern 34 are described. The sizes L1, L2, and L3 are design rules defined for each technology (for example, 90 nm technology).

  FIG. 23 is a diagram illustrating a usage example of the block 33. In FIG. 23, reference numeral 35 denotes an electron beam formed into a rectangular shape, and (A) shows a case where the entire block 33 is irradiated with the electron beam 35 (entire irradiation), (B) and (C) show a part of the block 33. The case where the electron beam 35 is irradiated (partial irradiation) is shown. That is, when the block 33 is used, it is possible to perform full irradiation or partial irradiation as shown in FIGS. 23A, 23B, or 23C depending on selection.

  Thus, when a block mask is used, various pattern groups can be collectively exposed on the wafer. In addition, since each basic pattern is created based on the design rule, it is possible to cope with various types of semiconductor devices with one type of block mask in one technology. Therefore, the batch exposure method using the block mask can realize cost reduction and throughput improvement.

JP 2001-160529 A JP 2002-25900 A

  For example, when the semiconductor devices A, B, and C are manufactured as shown in FIG. 20, as shown in FIG. 19, on the other hand, the basic pattern group 12 is used to design the semiconductor devices A, B, and C. On the other hand, a basic pattern necessary for manufacturing the semiconductor devices A, B, and C is selected from the basic pattern group 12, and the exposure data 17 for manufacturing the block mask is generated by the exposure data generating device 16 for manufacturing the block mask. Is produced, and the block mask 18 is manufactured based on this.

  However, in the case of consigned production of a semiconductor device, if the design data created by the customer is given as the design data of the semiconductor device, the customer's design rule is different from the design rule of the side entrusted with the production of the semiconductor device. In some cases, there is a problem that a block mask has to be prepared again in accordance with the customer's design rules, and thus throughput cannot be improved.

  FIG. 24 is a diagram for explaining the problems of the conventional electron beam exposure apparatus shown in FIG. In FIG. 24, reference numerals 37 and 38 denote blocks mounted on the block mask, reference numerals 39 and 40 denote patterns, reference numeral 41 denotes a rectangular shaped electron beam, and FIG. Is shown.

  In this case, since the size of the electron beam formed into a rectangle by the first aperture 2 is constant (for example, 5 μm square), the electron beam 41 is also irradiated to the block 38 in which the pattern 40 is arranged. Therefore, when manufacturing a block mask, it is necessary not to arrange other blocks in the vicinity of the block to be partially irradiated.

  However, in this case, the number of blocks that can be arranged on the block mask decreases, that is, the number of blocks that can be used for batch exposure decreases, and the number of times of exposure with variable rectangular exposure increases. Therefore, there is a problem that the throughput cannot be improved.

  In view of the above, an object of the present invention is to provide a charged particle beam exposure method and apparatus, a charged particle beam exposure data creation method and program, and a block mask capable of improving throughput.

  The charged particle beam exposure method of the present invention includes a step of manufacturing a plurality of block masks in which a plurality of blocks having different design rules are separately mounted, and an exposure pattern for an exposure target among the plurality of block masks. And a step of selecting a block mask including a block whose design rule matches the design rule and performing exposure on the exposure target.

  The charged particle beam exposure data creation method of the present invention includes a step of manufacturing a plurality of block masks on which a plurality of blocks having different design rules are separately mounted, and of the plurality of block masks, an object to be exposed The method includes a step of creating charged particle beam exposure data for performing exposure on the exposure target using a block mask including a block whose design rule matches the design data of the exposure pattern.

  The charged particle beam exposure data creation program of the present invention stores a plurality of block mask manufacturing exposure data for manufacturing a plurality of block masks on which a plurality of blocks having different design rules are mounted on a computer. And a charged particle beam exposure for performing exposure on the exposure target using a block mask including a block whose design rule matches the design data of the exposure pattern for the exposure target among the plurality of block masks It includes a program for executing a process of creating data.

  The charged particle beam exposure apparatus of the present invention includes a first aperture that shapes a charged particle beam emitted from a charged particle beam generation source into a rectangle of a predetermined size, and a charged particle beam that is formed into a rectangle of a predetermined size by the first aperture. And a block mask for shaping a charged particle beam shaped into a rectangular of any size by the second aperture into a pattern shape for batch exposure.

  The block mask of the present invention has a charged particle beam formed in a rectangular shape, which is L-shaped, L-shaped rotated 90 degrees, L-shaped rotated 180 degrees, or L-shaped rotated 270 degrees. It has a block which can be formed into a different shape.

In the charged particle beam exposure method of the present invention, a plurality of block masks for mounting a plurality of blocks with different design rules are manufactured in advance, and a plurality of pre-created blocks are prepared at the time of exposure. Among the block masks, a block mask including a block whose design rule matches the design data of the exposure pattern for the exposure target is used.

  Therefore, according to the charged particle beam exposure method of the present invention, it is possible to cope with a plurality of design rules for blocks, and it is necessary to manufacture a block mask anew every time exposure is performed that requires blocks with different design rules. Therefore, the throughput can be improved.

  According to the charged particle beam exposure data creation method of the present invention, the charged particle beam exposure method of the present invention can be implemented, and the throughput can be improved.

  According to the charged particle beam exposure data creation program of the present invention, the charged particle beam exposure data creation method of the present invention can be implemented, and the throughput can be improved.

  According to the charged particle beam exposure apparatus of the present invention, the second aperture for shaping the charged particle beam formed into the rectangular of the predetermined size by the first aperture into the rectangular of the arbitrary size is provided between the first aperture and the block mask. Therefore, it is possible to prevent the charged particle beam from being irradiated to the blocks around the block where the charged particle beam is partially irradiated. Therefore, a larger number of blocks can be mounted on the block mask to reduce the number of exposure times of the charged particle beam, thereby improving the throughput.

  According to the block mask of the present invention, a charged particle beam formed into a rectangular shape is selected to have an L shape, a shape obtained by rotating the L character by 90 degrees, a shape obtained by rotating the L character by 180 degrees, or an L shape of 270 degrees. Since it has a block that can be formed into a rotated shape, even when variable rectangular exposure is used, even if the short side size of the pattern increases due to etching correction, at least one type, It is possible to cope with collective exposure with four types of blocks at the maximum, and throughput can be improved.

It is a flowchart which shows 1st Embodiment of the charged particle beam exposure method of this invention. It is a figure which shows the manufacturing method of the block mask performed by 1st Embodiment of the charged particle beam exposure method of this invention. It is a figure for demonstrating the creation example of the control file used by 1st Embodiment of the charged particle beam exposure method of this invention. It is a figure for demonstrating the other preparation example of the control file used by 1st Embodiment of the charged particle beam exposure method of this invention. It is a figure which shows the exposure method with respect to the wafer performed in 1st Embodiment of the charged particle beam exposure method of this invention. It is a flowchart which shows the process performed with the exposure data preparation apparatus for wafer manufacture used by 1st Embodiment of the charged particle beam exposure method of this invention. It is a figure for demonstrating the reduction shot number calculated with the exposure data creation apparatus for wafer manufacture used with 1st Embodiment of the charged particle beam exposure method of this invention. It is a table | surface figure which shows the example of the total number of the reduction shots for every block mask calculated with the exposure data creation apparatus for wafer manufacture used by 1st Embodiment of the charged particle beam exposure method of this invention. It is a figure which shows an example of the block mask set produced by 1st Embodiment of the charged particle beam exposure method of this invention. It is a conceptual diagram which shows the electron beam exposure apparatus used with 1st Embodiment of the charged particle beam exposure method of this invention. 1 is a conceptual diagram of a computer system used as an exposure data creation apparatus for manufacturing a block mask and an exposure data creation apparatus for manufacturing a wafer required by the first embodiment of the charged particle beam exposure data creation method of the present invention. It is a figure which shows 2nd Embodiment of the charged particle beam exposure method of this invention. It is a figure which shows two of the blocks mounted in the block mask used with 2nd Embodiment of the charged particle beam exposure method of this invention. It is a flowchart which shows the process performed with the exposure data creation apparatus for wafer manufacture used with 2nd Embodiment of the charged particle beam exposure method of this invention. It is a figure for demonstrating the case where collective exposure is performed using the block shown in FIG. It is a figure which shows a part of electron beam irradiation table included in the exposure data for wafer manufacture created with 2nd Embodiment of the charged particle beam exposure method of this invention. It is a figure which shows the example of the block mounted in the block mask used by 2nd Embodiment of the charged particle beam exposure method of this invention. It is a figure for demonstrating an electron beam exposure method. It is a figure which shows an example of the design data creation method of the conventional semiconductor device, and the exposure data creation method for block mask manufacture. It is a figure which shows an example of the exposure data preparation method for the conventional wafer manufacture. It is a figure which shows the other example of the exposure data preparation method for the conventional block mask manufacture. It is a figure for demonstrating the parameter described in the control file shown in FIG. It is a figure which shows the usage example of the block shown in FIG. It is a figure for demonstrating the problem which the conventional electron beam exposure apparatus shown in FIG. 18 has.

  1 to 17, the charged particle beam exposure data creation method and charged particle beam exposure data creation program of the present invention will be described below with respect to the first and second embodiments of the charged particle beam exposure method of the present invention. The embodiments of the charged particle beam exposure apparatus and the block mask will be described. However, the present invention is not limited to these embodiments and can take various forms without departing from the gist of the invention. To get.

(First Embodiment of Charged Particle Beam Exposure Method of the Present Invention)
FIG. 1 is a flowchart showing a first embodiment of the charged particle beam exposure method of the present invention. 1st Embodiment of the charged particle beam exposure method of this invention is an example of the electron beam exposure method for manufacturing a semiconductor device.

  In the first embodiment of the charged particle beam exposure method of the present invention, first, a plurality of blocks on which a plurality of blocks having different design rules are mounted in an arbitrary number based on a plurality of control files. A plurality of block mask manufacturing exposure data for manufacturing a mask is created (step S1), and a plurality of block masks are manufactured using the plurality of block mask manufacturing exposure data (step S2).

  Next, based on the design data (circuit pattern data) of the semiconductor device to be manufactured, the exposure data for manufacturing the block mask having the largest number of reduced shots (reduced number of exposures) is obtained from the plurality of exposure data for manufacturing the block mask. The wafer manufacturing exposure data is created using the design data of the semiconductor device to be manufactured and the selected block mask manufacturing exposure data (step S4).

  Next, electron beam exposure is performed on the wafer using the created wafer manufacturing exposure data and the block mask having the largest number of shots to be reduced (step S5). The above process is a process performed in the first embodiment of the charged particle beam exposure method of the present invention. The process for creating exposure data for manufacturing a block mask (step S1) and the process for creating exposure data for manufacturing a wafer (step) S3 and S4) can be executed by a computer using a block mask manufacturing exposure data creation program and a wafer manufacturing exposure data creation program, which will be described later.

  FIG. 2 is a diagram showing a block mask manufacturing method executed in the first embodiment of the charged particle beam exposure method of the present invention. In FIG. 2, 42-1, 42-2, and 42-N (N is an integer of 4 or more) describe the specifications of the blocks to be formed on the block mask (parameters such as pattern size and distance between patterns) in a predetermined format. The control files 42-3 to 42-(N−1) are not shown.

  43 is a block mask manufacturing exposure data generating device that inputs the control file 42-i to generate block mask manufacturing exposure data, and 44-1, 44-2, and 44-N are block mask manufacturing exposure data generating devices 43. The block mask manufacturing exposure data 44-3 to 44- (N-1) are not shown. The block mask manufacturing exposure data 44-i is created using the control file 42-i.

  45-1, 45-2 and 45-N are block masks, and block masks 45-3 to 45- (N-1) are not shown. The block mask 45-i is manufactured using the exposure data 44-i for manufacturing the block mask.

  In other words, in the example of FIG. 2, the block mask manufacturing exposure data creation device 43 uses an arbitrary number of N blocks with different design rules based on the N control files 42-1 to 42-N. N pieces of block mask manufacturing exposure data 44-1 to 44-N for manufacturing N block masks 45-1 to 45-N to be separately mounted are created. Then, N block masks are manufactured using these N block mask manufacturing exposure data 44-1 to 44-N.

  FIG. 3 is a diagram for explaining an example of creating the control files 42-1 to 42-N. Here, when the semiconductor device to be manufactured is, for example, a semiconductor device of 90 nm technology, there is a high possibility that the pattern sizes of the contact layer and all via layers are defined within a range of 100 nm to 600 nm. Therefore, for example, the pattern size is set in increments of +10 nm from 100 nm to 600 nm.

  For each pattern size, the inter-pattern size is set in increments of +10 nm. In this case, from the viewpoint of the wafer process, the minimum pattern size is the same as the pattern size, and the maximum pattern size is twice the pattern size. Therefore, for example, for a pattern having a pattern size = 100 nm, the inter-pattern size starts from 100 nm and is set to 200 nm in increments of +10 nm, and 11 blocks are created.

  Then, for example, the maximum number of blocks mounted on one block mask is 100, and the control file is created so that the number of blocks created by one control file is 100 or less. When the semiconductor device to be manufactured is an ASIC, a microcomputer, or the like, the contact layer and the via layer have only one type of pattern size. Therefore, the same pattern size pattern should be created on one block mask. Is preferred.

  Here, for example, in the example of FIG. 3, since the number of blocks with pattern size = 100 nm to 160 nm is 98, the specifications of these blocks with block size = 100 nm to 160 nm are written in the control file 42-1. . Also, since the number of blocks with pattern size = 170 nm to 210 nm is 100, the specifications of blocks with pattern size = 170 nm to 210 nm are written in the control file 42-2.

  In this way, when preparing multiple blocks with different design rules by setting multiple block sizes and setting multiple inter-pattern sizes for each block size, consignment production, etc. Thus, it is possible to prepare for the case where the customer's design rule is unknown and to improve the throughput.

  FIG. 4 is a diagram for explaining another example of creation of the control file. In FIG. 4, reference numeral 46 denotes a block mask, and a dotted frame 47 indicates a block arrangement possible position. In this example, the block mask 46 has 100 block arrangement possible positions.

  Here, as the distance from the block arrangement position to the center 48 of the block mask 46 is shorter, the exposure can be performed with higher accuracy. Therefore, for example, there are 36 block arrangement positions 47 in the peripheral areas 49 to 52 at the block arrangement possible positions 47. It is preferable to arrange the blocks in the 64 block arrangement-possible areas 47 inside the peripheral areas 49 to 52 without arranging them.

  Therefore, in this example, the number of blocks created by one control file is set to 64 or less. Note that “1” to “64” described in the block arrangement possible position 47 indicate the numbers of the blocks arranged on the block mask 46.

  In addition, since the shorter the distance to the center 48 of the block mask 46, the higher the accuracy of exposure, the light may be mounted on different block masks in ascending order of pattern size. For example, a block having a pattern size = 100 nm is arranged from the center of the block mask 45-1 shown in FIG. 2, and a block having the pattern size = 110 nm is arranged from the center of the block mask 45-2 shown in FIG. There is also a method.

  FIG. 5 is a view showing an exposure method for a wafer executed in the first embodiment of the charged particle beam exposure method of the present invention. In FIG. 5, reference numeral 53 denotes design data (circuit pattern data) of a semiconductor device to be manufactured, and 54 denotes design data 53 of the semiconductor device to be manufactured and exposure data 44-1 to 44-N for manufacturing block masks. This is an exposure data creation apparatus for wafer production that creates exposure data for wafer production by selecting exposure data for production of a block mask having the largest number of shots.

  55 is the wafer manufacturing exposure data created by the wafer manufacturing exposure data creating apparatus 54, 56 is a block mask manufactured using the block mask manufacturing exposure data selected by the wafer manufacturing exposure data creating apparatus 54, 57 Is an electron beam exposure apparatus (one embodiment of the charged particle beam exposure apparatus of the present invention), and 58 is a wafer to be exposed.

  In other words, in the example of FIG. 5, the wafer manufacturing exposure data creation device 54 inputs the design data 53 of the semiconductor device to be manufactured and the exposure data 44-1 to 44-N for manufacturing the block mask, and the number of shots to be reduced is the largest. Exposure data for manufacturing a wafer is generated by selecting exposure data for manufacturing a large block mask.

  The electron beam exposure device 57 uses the wafer manufacturing exposure data 55 created by the wafer manufacturing exposure data creation device 54 and the block mask manufacturing exposure data selected by the wafer manufacturing exposure data creation device 54. The wafer 58 is exposed using the manufactured block mask, that is, the block mask 56 having the largest number of reduced shots.

  FIG. 6 is a flowchart showing processing executed by the wafer manufacturing exposure data creation device 54. That is, in the wafer manufacturing exposure data creation device 54, first, design data 53 of a semiconductor device to be manufactured is input (step P1), and then, block mask manufacturing exposure data 44-1 to 44-N are input. (Step P2).

  Next, blocks that match the blocks included in the block mask manufacturing exposure data 44-1 to 44-N are extracted from the design data 53 of the semiconductor device to be manufactured (step P3). Then, for each extracted block, the number of shots to be reduced is calculated by a known method (for example, the method described in Japanese Patent Laid-Open No. 2001-160529) (step P4). Here, the reduced number of shots is a value obtained by subtracting “the number of shots when performing collective exposure” from “the number of shots when performing variable rectangular exposure”.

  Next, the number of shots to be reduced is calculated for each block mask (step P5), and the exposure data for manufacturing the block mask having the largest number of reduced shots is selected from the exposure data 44-1 to 44-N for manufacturing the block mask ( Step P6), the wafer manufacturing exposure data 55 is created and output using the design data 53 of the semiconductor device to be manufactured and the selected block mask manufacturing exposure data (step P7).

  That is, the wafer manufacturing exposure data creation device 54 uses the exposure data for block mask manufacturing including blocks created with a design rule that matches the design rule that is the basis of the design data of the semiconductor device to be manufactured. Wafer manufacturing exposure data is created.

  FIG. 7 is a diagram for explaining the number of reduced shots and shows a part of a block mask. In FIG. 7, 59 is a pattern arranged with the same inter-pattern size, and 60 is a block. In this example, 135 patterns are created by 15 blocks. Here, for example, when 135 patterns 59 are exposed in pattern units, the number of shots is 135, and when exposed in block units, the number of shots is 15. Therefore, in this example, the number of shots to be reduced is 120.

  Therefore, in the first embodiment of the charged particle beam exposure method of the present invention, the total number of shots reduced for the number of blocks mounted for each block mask is obtained. FIG. 8 is a table showing an example of the total number of reduced shots for each block mask.

  Here, for example, if the number of reduced shots of the block mask 45-2 is the maximum among the N block masks 45-1 to 45-N, the block mask 45-2 is used in the electron beam exposure apparatus 57. Select as block mask. The block masks 45-1 to 45-N can be configured as a block mask set that is an aggregate of these.

  FIG. 9 is a diagram illustrating an example of a block mask set. In FIG. 9, 61 is a block mask set, 62 is a block mask, and a block 63 is mounted on each block mask 62. In this example, 30 block masks 62 are mounted, but each block mask 62 is assigned a unique number (block mask number). Numbers “1” to “30” described in the block mask 62 indicate block mask numbers.

  Therefore, for example, when the block mask 45-2 shown in FIG. 2 is mounted at the position of the block mask number = 2, exposure is used for the wafer manufacturing exposure data to identify the block mask 45-2. 2 is stored as the block mask number. In addition, information such as the position on the wafer where the block is exposed is stored.

  In FIG. 5, when wafer manufacturing exposure data 55 is input to the electron beam exposure apparatus 57, the electron beam exposure apparatus 57 reads the exposure use block mask number stored in the wafer manufacturing exposure data 55. A block mask that matches the block mask number is selected from the block mask set, and a pattern is exposed on the wafer 58 using the selected block mask.

  FIG. 10 is a conceptual diagram of the electron beam exposure apparatus 57. In FIG. 10, 64 is an electron gun that emits an electron beam, 65 is a first aperture that shapes the electron beam emitted from the electron gun 64 into a rectangle of a predetermined size (for example, a 5 μm square), and 66 is a first aperture. A second aperture for shaping the electron beam shaped into a rectangle at 65 to an arbitrary size, 67 is a block mask, and 68 and 69 are two blocks in the block mask 67.

  In the electron beam exposure device 57, the electron beam emitted from the electron gun 64 is formed into a rectangular shape of a predetermined size by the first aperture 65, and the electron beam formed into the rectangular shape of the predetermined size is arbitrarily selected by the second aperture 66. Is formed into a rectangular shape. Then, the electron beam formed into a rectangular of arbitrary size is irradiated onto a part or the whole of the block mounted on the block mask 67, and the electron beam formed with a part or the whole of the block pattern is exposed to the wafer 58. Is done.

  FIG. 11 is a conceptual diagram of a computer system used as the exposure data creation device 43 for manufacturing block masks and the exposure data creation device 54 for manufacturing wafers. In FIG. 11, reference numeral 71 denotes a computer main body constituting a personal computer, an engineering workstation, etc. 72 denotes an input device, 73 denotes a display device, and 74 denotes a communication device.

  The input device 72 is used when inputting various commands for operating the computer main body 71, responses to requested instructions, and the like, and is a keyboard, a mouse, or the like. The display device 73 displays the result processed by the computer main body 71 and various information for enabling interaction with the user when operating the computer main body 71. The communication device 74 communicates with other devices, and is a modem, a network interface, or the like.

  In the computer main body 71, 75 is a CPU (central processing unit), 76 is a random access memory (RAM) used by the CPU 75, 77 is a hard disk device (HDD) used for storing programs, 78 is an input device 72, display An interface 79 for connecting to the device 73 and the communication device 74 is a bus.

  The hard disk device 77 includes, for example, a block mask manufacturing exposure data creation program 80 used for creating block mask manufacturing exposure data executed in the first embodiment of the charged particle beam exposure method of the present invention, and the present invention. A wafer manufacturing exposure data creation program 81 used for creating wafer manufacturing exposure data executed in the first embodiment of the charged particle beam exposure method is stored.

  The block mask manufacturing exposure data creation program 80 and the wafer manufacturing exposure data creation program 81 are loaded from the hard disk device 77 to the RAM 76 and executed in accordance with an execution instruction from the input device 72. The block mask manufacturing exposure data creation program 80 and the wafer manufacturing exposure data creation program 81 are loaded into the RAM 76 via the communication device 74 and the interface 78 from a storage device outside the computer system shown in FIG. May be.

  As described above, in the first embodiment of the charged particle beam exposure method of the present invention, a process (step for manufacturing) a plurality of block masks on which a plurality of blocks having different design rules are mounted in an arbitrary number is mounted. S1 and S2) and the step (steps S3 to S5) of performing electron beam exposure on the wafer by selecting the exposure data for manufacturing the block mask having the largest number of reduced shots among the plurality of block masks. .

  That is, according to the first embodiment of the charged particle beam exposure method of the present invention, when the semiconductor device is commissioned, it can be prepared when the customer's design rule is unknown. Even when design data created by a customer is given, it is not necessary to manufacture a block mask anew according to the customer's design rules, and throughput can be improved.

(Second Embodiment of Charged Particle Beam Exposure Method of the Present Invention)
FIG. 12 is a diagram showing a second embodiment of the charged particle beam exposure method of the present invention. The charged particle beam exposure method according to the second embodiment of the present invention is another example of an electron beam exposure method for manufacturing a semiconductor device. In FIG. 12, reference numeral 82 denotes a control file in which specifications (parameters such as pattern size and distance between patterns) of blocks formed on the block mask are described in a predetermined format.

  Reference numeral 83 denotes a block mask manufacturing exposure data creating apparatus that inputs the control file 82 to create block mask manufacturing exposure data, 84 is block mask manufacturing exposure data created by the block mask manufacturing exposure data creating apparatus 83, and 85 is It is a block mask manufactured using the exposure data 84 for manufacturing the block mask.

  Reference numeral 86 denotes design data (circuit pattern data) of a semiconductor device to be manufactured, and reference numeral 87 denotes design data 86 of the semiconductor device to be manufactured and exposure data 84 for manufacturing a block mask to generate wafer manufacturing exposure data. An exposure data creation apparatus 88 is wafer production exposure data created by the wafer production exposure data creation apparatus 87, 89 is an electron beam exposure apparatus having the configuration shown in FIG. 10, and 90 is a wafer.

  In the second embodiment of the charged particle beam exposure method of the present invention, first, exposure data 84 for manufacturing a block mask for manufacturing a block mask 85 on which a plurality of blocks are mounted is created based on the control file 82. The block mask 85 is manufactured using the exposure data 84 for manufacturing the block mask.

  Next, the wafer manufacturing exposure data 88 is created using the design data (circuit pattern data) 86 of the semiconductor device to be manufactured and the wafer manufacturing exposure data creating device 87, and the wafer manufacturing exposure data 88 is created. Then, electron beam exposure is performed on the wafer 90 using the block mask 85.

  Note that the computer system shown in FIG. 11 can be used as the exposure data creation device 83 for manufacturing the mask mask and the exposure data creation device 87 for manufacturing the wafer. In this case, as the block mask manufacturing exposure data creation program 80 and the wafer manufacturing exposure data creation program 81, the block mask manufacturing exposure data creation process and wafer manufacturing in the second embodiment of the charged particle beam exposure method of the present invention are used. A program that can execute the exposure data creation step is used.

  FIG. 13 is a diagram showing two of the blocks mounted on the block mask 85. In FIG. 13, reference numerals 91 and 92 denote blocks, and the block 91 has a reverse concave shape (opening) 93, and the block 92 is a concave shape pattern (opening) 94 obtained by rotating the reverse concave shape by 90 degrees. Have

  The short side sizes of the patterns 93 and 94 are determined by the technology and the specifications of the etching correction process. For example, in the 90 nm technology, if the short side size of the pattern is 100 nm and the maximum change size of the short side size in the etching correction process is +30 nm, the short side size of the patterns 93 and 94 is set to 130 nm or more.

  FIG. 14 is a flowchart showing processing executed by the wafer manufacturing exposure data creation device 87. In the wafer manufacturing exposure data creation device 87, first, design data 86 of a semiconductor device to be manufactured is input (step Q1), and then block mask manufacturing exposure data 84 is input (step Q2).

  Next, an L-shaped pattern, a pattern obtained by rotating the L-shaped pattern by 90 degrees, a pattern obtained by rotating the L-shaped pattern by 180 degrees, and a pattern obtained by rotating the L-shaped pattern by 270 degrees from the design data 86 of the semiconductor device to be manufactured, That is, a bowl-shaped pattern is extracted (step Q3), and for the bowl-shaped pattern, an electron beam irradiation table for exposure using blocks 91 and 92 is created (step Q4), and this electron beam irradiation table is included. Wafer manufacturing exposure data is created and output (step Q5).

  FIG. 15 is a diagram for explaining a case where collective exposure is performed using the blocks 91 and 92. FIG. 15A shows a group of patterns to be exposed on the resist on the wafer. Reference numerals 95 to 104 denote patterns to be exposed on the resist on the wafer, which are patterns subject to variable rectangular exposure in the past. .

  In this example, in the second embodiment of the charged particle beam exposure method of the present invention, the patterns 95 and 96 are collectively exposed using the frame 105 in the block 91 as shown in FIG. The patterns 97 and 98 are collectively exposed using the frame 106 in the block 91, and the patterns 99 and 100 are collectively exposed using the frame 107 in the block 91.

  The patterns 101 and 102 are collectively exposed using the frame 108 in the block 92, and the patterns 103 and 104 are collectively exposed using the frame 109 in the block 92. In this way, as shown in FIG. 15C, the patterns 110 to 114 can be collectively exposed in order.

  Here, an etching correction process may be performed on the wiring layer pattern or the like as a process of correcting a change in pattern size due to a microloading effect after etching. In the etching correction process, the size of the long side or short side of the pattern is changed in advance according to the distance from another pattern placed around it so that the pattern size after etching does not differ from the pattern size of the design data. To be done.

  As a result, when the patterns 95 to 104 are subjected to variable rectangular exposure, the short side sizes that were 1 to 2 before the etching correction processing become several tens of types after the processing. In the example of FIG. , Steps 115 to 117 may occur.

  In the second embodiment of the charged particle beam exposure method of the present invention, when the patterns 95 and 96 are collectively exposed, the width of the rectangular electron beam is the same as the long side size 118 of the pattern 95 and the height is short of the pattern 95. The width 120 is the short side size 121 of the pattern 95 and the width 122 is the short side size of the pattern 96 in the portion where the side size is equal to the total size 119 of the long side size of the pattern 96 and the electron beam overlaps the pattern 93. The irradiation position is determined so as to be the same as 123.

  The irradiation position is set by, for example, setting coordinates (X, Y) at the vertex 124 at the lower left corner of the frame 105, and setting the coordinates (X, Y) at the vertex 125 at the lower left corner of the block 91 as the origin (0, 0). This can be done by defining and determining the coordinates (X, Y) of the vertex 124. When the patterns 97 and 98, the patterns 99 and 100, the patterns 101 and 102, and the patterns 103 and 104 are collectively exposed, the size and irradiation position of the rectangular electron beam are similarly set. Therefore, the pattern of the wiring layer and the gate layer can be collectively exposed with 1 to 4 types of blocks.

  Batch exposure as shown in FIG. 15B can be performed by including the electron beam irradiation table shown in FIG. In FIG. 16, 126 is an information storage area for one batch exposure, 127-1 is a block arrangement position (X) information storage area, 127-2 is a block arrangement position (Y) information storage area, and 127-3 is an electronic storage area. Beam size (width) information storage area, 127-4 is an electron beam size (height) information storage area, 127-5 is an irradiation position on the block (X) information storage area, 127-6 is an irradiation position on the block (Y) This is an information storage area.

  The block arrangement position (X) information storage area 127-1 stores the X coordinate value of the position on the block mask of the block origin (lower left corner vertex), and the block arrangement position (Y) information storage area 127-2. Stores the Y coordinate value of the position of the block origin on the block mask.

  The electron beam size (width) information storage area 127-3 stores the width size of the electron beam applied to the block, and the electron beam size (height) information storage area 127-4 stores the electron beam applied to the block. Stores the height size of the.

  The on-block irradiation position (X) information storage area 127-5 stores the X coordinate value of the position on the block of the origin (lower left corner vertex) of the electron beam irradiated on the block, and the on-block irradiation position (Y) information. The storage area 127-6 stores the Y coordinate value of the position on the block of the origin of the electron beam irradiated to the block.

  As described above, according to the second embodiment of the charged particle beam exposure method of the present invention, the block mask 85 has an L shape by selecting a rectangular electron beam and a shape in which the L shape is rotated by 90 degrees. The blocks 91 and 92 can be formed into a shape obtained by rotating the L shape by 180 degrees or a shape obtained by rotating the L shape by 270 degrees.

  Therefore, when dealing with variable rectangular exposure, even if the short side size of the pattern increases to several tens of types due to etching correction, it can be handled with collective exposure with 1 to 4 types of blocks. The throughput in charged particle beam exposure can be improved.

  As shown in FIG. 17A, a block 130 in which an L-shaped pattern 129 is arranged as shown in FIG. A block 132 having a pattern 131 rotated 90 degrees, a block 134 having a pattern 133 rotated 180 degrees of the L-shaped pattern 129, and a block 136 having a pattern 135 rotated 270 degrees of the L-shaped pattern 129. You may make it mount.

  137 is an example of an electron beam irradiation position when the block 130 is partially irradiated with an electron beam, 138 is an example of an electron beam irradiation position when the block 132 is partially irradiated with an electron beam, and 139 is an electron beam irradiation position to the block 134. An example of the irradiation position of the electron beam in the case of partial irradiation, 140 indicates an example of the irradiation position of the electron beam when the block 136 is partially irradiated with the electron beam.

  In addition, as shown in FIG. 17B, a block 142 in which a T-shaped pattern 141 is arranged and an inverted T-shaped pattern as a block in which a rectangular shaped electron beam can be formed into a bowl shape on the block mask 85. A block 144 in which 143 is arranged may be mounted. Reference numerals 145 and 146 denote examples of electron beam irradiation positions when the block 142 is partially irradiated with an electron beam, and reference numerals 147 and 148 denote examples of electron beam irradiation positions when the block 144 is partially irradiated with an electron beam.

  Further, as shown in FIG. 17C, a block 150 having an H-shaped pattern 149 is mounted on the block mask 85 as a block in which a rectangular electron beam can be formed into a bowl shape. May be. 151 to 154 show examples of electron beam irradiation positions when the block 150 is partially irradiated with an electron beam.

  Further, as shown in FIG. 17D, a pattern 155 obtained by rotating an H-shaped pattern by 90 degrees is arranged on the block mask 85 as a block in which a rectangular electron beam can be formed into a bowl shape. A block 156 may be mounted. Reference numerals 157 to 160 show examples of irradiation positions of the electron beam when the block 156 is partially irradiated with the electron beam.

  Further, as shown in FIG. 17E, a block 162 on which a cross pattern 161 is arranged is mounted on the block mask 85 as a block in which a rectangular electron beam can be formed into a bowl shape. May be. Reference numerals 163 to 166 show examples of irradiation positions of the electron beam when the block 162 is partially irradiated with the electron beam.

  Here, when the present invention is organized, the present invention includes at least the following charged particle beam exposure method, charged particle beam exposure apparatus, charged particle beam exposure data creation method, charged particle beam exposure data creation program, and block mask. Is included.

  (Supplementary Note 1) A step of manufacturing a plurality of block masks in which a plurality of blocks having different design rules are separately mounted, and of the plurality of block masks, exposure pattern design data and design rules for an exposure target A charged particle beam exposure method comprising: a step of selecting a block mask including blocks having the same value and performing exposure on the exposure target.

  (Supplementary note 2) In the step of manufacturing a plurality of block masks on which a plurality of blocks having different design rules are mounted separately, specifications of the blocks mounted on the plurality of block masks are described in a predetermined format. And a step of creating a plurality of block mask manufacturing exposure data from a plurality of control files, and a step of manufacturing the plurality of block masks from the plurality of block mask manufacturing exposure data. The charged particle beam exposure method according to appendix 1.

  (Supplementary Note 3) The supplementary note 1 is characterized in that selection of a block mask including a block whose design rule matches the design data of the exposure pattern for the exposure target is performed by selecting a block mask with the smallest number of shots. Charged particle beam exposure method.

(Appendix 4)
The selection of the block mask with the smallest number of shots is performed by extracting blocks matching the blocks mounted on the plurality of block masks from the design data of the exposure pattern to be exposed, and reducing each extracted block. 4. The charged particle beam exposure method according to appendix 3, wherein the exposure is performed by determining the number of shots.

  (Additional remark 5) The process which manufactures the several block mask which divides and mounts the several block from which a design rule differs, The design data and design rule of the exposure pattern with respect to exposure object among the said several block masks A charged particle beam exposure data creation method comprising the step of creating charged particle beam exposure data for performing exposure on the exposure target using a block mask including blocks having the same value.

  (Supplementary Note 6) In the step of manufacturing a plurality of block masks for separately mounting a plurality of blocks having different design rules, specifications of the blocks to be mounted on the plurality of block masks are described in a predetermined format. And a step of creating a plurality of block mask manufacturing exposure data from a plurality of control files, and a step of manufacturing the plurality of block masks from the plurality of block mask manufacturing exposure data. The charged particle beam exposure data creation method according to appendix 5.

  (Supplementary note 7) The supplementary note 5 is characterized in that the selection of the block mask including the block whose design rule matches the design data of the exposure pattern for the exposure target is performed by selecting the block mask with the smallest number of shots. Charged particle beam exposure data creation method.

  (Supplementary Note 8) The selection of the block mask with the smallest number of shots is performed by extracting a block that matches the block mounted on the plurality of block masks from the design data of the exposure pattern of the exposure target, and extracting the block The charged particle beam exposure data creation method according to appendix 7, wherein the method is performed by obtaining the number of shots to be reduced for each block.

  (Supplementary Note 9) A step of creating a plurality of block mask manufacturing exposure data for manufacturing a plurality of block masks for separately mounting a plurality of blocks having different design rules on a computer; A step of creating charged particle beam exposure data for performing exposure on the exposure target using a block mask including a block whose design rule matches the design data of the exposure pattern for the exposure target among the block masks of A charged particle beam exposure data creation program comprising a program.

  (Supplementary Note 10) The step of creating a plurality of block mask manufacturing exposure data for manufacturing a plurality of block masks on which a plurality of blocks having different design rules are mounted separately includes the plurality of blocks. The charged particle beam exposure according to claim 9, further comprising the step of creating the plurality of block mask manufacturing exposure data from a plurality of control files in which specifications of blocks to be mounted on the mask are described in a predetermined format. Data creation program.

  (Supplementary note 11) The supplementary note 9 is characterized in that selection of a block mask including a block whose design rule coincides with design data of an exposure pattern for the exposure target is performed by selecting a block mask with the smallest number of shots. Charged particle beam exposure data creation program.

  (Additional remark 12) The selection of the block mask with the smallest number of shots is performed by extracting the block that matches the block mounted on the plurality of block masks from the design data of the exposure pattern of the exposure target, and extracting the block The charged particle beam exposure data creation program according to appendix 11, which is performed by obtaining the number of shots to be reduced for each block.

  (Additional remark 13) The 1st aperture which shape | molds the charged particle beam radiated | emitted from the charged particle beam generation source in the rectangle of predetermined size, and the charged particle beam shape | molded by the said 1st aperture into the rectangle of predetermined size are made into the rectangle of arbitrary sizes A charged particle beam exposure apparatus comprising: a second aperture to be shaped; and a block mask for shaping a charged particle beam shaped into a rectangle of an arbitrary size by the second aperture into a pattern shape for batch exposure.

  (Supplementary Note 14) The block mask has an L-shape, a shape obtained by rotating the L-shape by 90 degrees, a shape obtained by rotating the L-shape by 180 degrees, or an L-shape by 270 by selecting a charged particle beam formed into a rectangle. 14. The charged particle beam exposure apparatus according to appendix 13, wherein the charged particle beam exposure apparatus has a block that can be formed into a shape rotated by a predetermined degree.

  (Supplementary Note 15) As the block, a block having a block having a concave pattern and a pattern having a reverse concave pattern, or a block having an L-shaped pattern, and a pattern obtained by rotating the L-shaped pattern by 90 degrees. Blocks arranged, blocks arranged with a pattern obtained by rotating the L-shaped pattern 180 degrees and blocks arranged with a pattern obtained by rotating the L-shaped pattern 270 degrees, or blocks arranged with a T-shaped pattern and inverted T-shaped patterns , A block in which an H-shaped pattern is arranged, a block in which a pattern obtained by rotating the H-shaped pattern by 90 degrees, or a block in which a cross-shaped pattern is arranged is provided. The charged particle beam exposure apparatus according to appendix 14.

  (Supplementary Note 16) A step of forming a charged particle beam emitted from a charged particle beam generation source into a rectangle of a predetermined size by a first aperture, and a charged particle beam formed into a rectangle of a predetermined size by the first aperture. And a charged particle beam exposure method comprising: forming a charged particle beam formed into an arbitrary size rectangle by the second aperture into a pattern for batch exposure using a block mask. .

  (Supplementary Note 17) The block mask has an L shape, a shape obtained by rotating the L shape by 90 degrees, a shape obtained by rotating the L shape by 180 degrees, or an L shape by 270 depending on selection of a charged particle beam formed in a rectangular shape. 18. The charged particle beam exposure method according to supplementary note 16, comprising a block that can be formed into a shape rotated by a predetermined degree.

  (Supplementary Note 18) As the block, a block having a block with a concave pattern and a pattern with a reverse concave pattern, or a block with an L-shaped pattern, a pattern obtained by rotating the L-shaped pattern by 90 degrees Blocks arranged, blocks arranged with a pattern obtained by rotating the L-shaped pattern 180 degrees and blocks arranged with a pattern obtained by rotating the L-shaped pattern 270 degrees, blocks arranged with a T-shaped pattern, and inverted T-shaped patterns , A block in which an H-shaped pattern is arranged, a block in which a pattern obtained by rotating the H-shaped pattern by 90 degrees, or a block in which a cross-shaped pattern is arranged is provided. The charged particle beam exposure method according to appendix 17.

  (Additional remark 19) The process of shape | molding the charged particle beam shape | molded by the said 2nd aperture into the rectangle of arbitrary sizes from the design data of the exposure pattern with respect to exposure object, and the exposure data for block mask manufacture to the pattern for batch exposure with the said block mask 18. The charged particle according to claim 16, further comprising a step of creating block arrangement position information on the block mask, size information of the charged particle beam, and irradiation position information on the block of the charged particle beam necessary for the block mask Beam exposure method.

  (Supplementary note 20) By selecting a charged particle beam shaped into a rectangle, an L shape, a shape obtained by rotating the L character by 90 degrees, a shape obtained by rotating the L character by 180 degrees, or a shape obtained by rotating the L character by 270 degrees A block mask characterized by having a block that can be formed into a mask.

  (Supplementary note 21) As the block, a block having a pattern in which a concave pattern is arranged and a block in which an inverted concave pattern is arranged, or a block in which an L-shaped pattern is arranged, a pattern obtained by rotating the L-shaped pattern by 90 degrees Blocks arranged, blocks arranged with a pattern obtained by rotating the L-shaped pattern 180 degrees and blocks arranged with a pattern obtained by rotating the L-shaped pattern 270 degrees, blocks arranged with a T-shaped pattern, and inverted T-shaped patterns , A block in which an H-shaped pattern is arranged, a block in which a pattern obtained by rotating the H-shaped pattern by 90 degrees, or a block in which a cross-shaped pattern is arranged is provided. The block mask according to appendix 20.

47 ... Block mountable area 48 ... Block mask center 49 to 51 ... Area around the block mask 91, 92 ... Block 93, 94 ... Pattern 95 to 104, 110 to 114 ... Pattern 106 to 109 ... Electron beam irradiation position 115-117 ... steps 129, 131, 133, 135 ... pattern 130, 132, 134, 136 ... block 137-140 ... irradiation position of electron beam 141, 143 ... pattern 142, 144 ... block 145-148 ... irradiation of electron beam Position 149 ... Pattern 150 ... Block 151-154 ... Electron beam irradiation position 155 ... Pattern 156 ... Block 157-160 ... Electron beam irradiation position 161 ... Pattern 162 ... Block 163-166 ... Electron beam irradiation position

Claims (3)

A first aperture for shaping a charged particle beam emitted from a charged particle beam generation source into a rectangle of a predetermined size;
A second aperture for shaping the charged particle beam shaped into a rectangle of a predetermined size by the first aperture into a rectangle of an arbitrary size;
A charged particle beam exposure apparatus comprising: a block mask configured to form a charged particle beam formed into a rectangular shape of any size by the second aperture into a pattern shape for batch exposure. In the block mask, a charged particle beam formed into a rectangular shape is optionally selected to have an L shape, an L shape rotated by 90 degrees, an L shape rotated by 180 degrees, or an L shape rotated by 270 degrees. The charged particle beam exposure apparatus according to claim 1, further comprising a block that can be formed into a shape. As the block,
A block having a concave pattern and a block having a reverse concave pattern, or
A block in which an L-shaped pattern is arranged, a block in which a pattern obtained by rotating the L-shaped pattern by 90 degrees, a block in which a pattern in which the L-shaped pattern is rotated by 180 degrees are arranged, and the L-shaped pattern are rotated by 270 degrees Block with pattern, or
A block with a T-shaped pattern and a block with an inverted T-shaped pattern, or
A block with an H-shaped pattern, or
A block in which a pattern obtained by rotating an H-shaped pattern by 90 degrees is arranged, or
The charged particle beam exposure apparatus according to claim 2, further comprising a block in which a cross pattern is arranged.

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