TWI601467B - Circuit board structure and manufacturing method thereof - Google Patents

Circuit board structure and manufacturing method thereof Download PDF

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TWI601467B
TWI601467B TW104115406A TW104115406A TWI601467B TW I601467 B TWI601467 B TW I601467B TW 104115406 A TW104115406 A TW 104115406A TW 104115406 A TW104115406 A TW 104115406A TW I601467 B TWI601467 B TW I601467B
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dielectric layer
heat pipe
heat
component
circuit board
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TW104115406A
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TW201640971A (en
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鄭偉鳴
周亮余
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欣興電子股份有限公司
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Description

電路板結構及其製造方法 Circuit board structure and manufacturing method thereof

本發明是有關於一種電路板結構及其製造方法,且特別是有關於一種具有內埋式元件的電路板結構及其製造方法。 The present invention relates to a circuit board structure and a method of fabricating the same, and more particularly to a circuit board structure having a buried component and a method of fabricating the same.

由於電子產品的集成度(integration)越來越高,應用於高集成度之電子產品的電路板,其線路層也由單層、2層而變為6層、8層,甚至到10層以上,以使電子元件能夠更密集的裝設於印刷電路板上。然而,隨著電路板層數的增加與線路的密集化,在電路板中傳遞之電性訊號,其電阻電容延遲效應(RC delay)或串音效應(cross talk)所造成的影響也越來越明顯。為了改善電路板的電性性質,需要在電路板有限的配置面積上增設電子元件。然而,具有特定電性數值之規格化被動元件可能無法完全符合特別的電路設計,因此將電子元件直接製作於電路板內部便是一個可行的解決之道。 Due to the increasing integration of electronic products, circuit boards used in highly integrated electronic products have changed from one layer to two layers to six layers, eight layers, and even more than ten layers. In order to enable electronic components to be more densely mounted on the printed circuit board. However, as the number of layers of the board increases and the line is dense, the influence of the RC delay or cross talk on the electrical signals transmitted in the board is also increasing. The more obvious. In order to improve the electrical properties of the board, it is necessary to add electronic components to the limited configuration area of the board. However, a normalized passive component with a specific electrical value may not be fully compliant with a particular circuit design, so making the electronic component directly inside the board is a viable solution.

目前一般具有內埋式元件之電路板大多將電子元件在電路板的製造過程中埋入。然而,若內埋式元件是高功率的電子元 件,當整機運轉時,可能產生高熱造成終端產品當機或運作失常等缺點。 At present, circuit boards generally having embedded components mostly embed electronic components in the manufacturing process of the circuit board. However, if the embedded component is a high power electronic component When the whole machine is running, there may be disadvantages such as high heat causing the terminal product to crash or malfunction.

本發明提供一種電路板結構,其具有內埋式元件,且能提供良好的散熱效果。 The present invention provides a circuit board structure having a buried component and capable of providing a good heat dissipation effect.

本發明提供一種電路板結構的製造方法,其可製造出上述的電路板結構。 The present invention provides a method of fabricating a circuit board structure that can produce the above-described circuit board structure.

本發明的一種電路板結構,包括一第一介電層、一內埋式元件、一熱管、一導熱材料、一第二介電層及多個導熱柱。第一介電層包括一開槽。內埋式元件位於第一介電層的開槽內,且包括相對的一主動面與一背面。熱管位於第一介電層的開槽內,內埋式元件與熱管共平面。導熱材料填充於第一介電層的開槽且包覆內埋式元件與熱管。第二介電層位於第一介電層的一側並覆蓋開槽,其中內埋式元件的背面朝向第二介電層,第二介電層包括多個第一孔洞,內埋式元件與熱管對第二介電層所在平面的正投影重疊於這些第一孔洞。導熱柱配置於第二介電層的第一孔洞內,其中內埋式元件所產生的熱以及傳遞至熱管與導熱材料的熱可透過導熱柱傳出。 A circuit board structure of the present invention includes a first dielectric layer, a buried component, a heat pipe, a heat conductive material, a second dielectric layer, and a plurality of heat conducting columns. The first dielectric layer includes a slot. The embedded component is located in the slot of the first dielectric layer and includes an opposite active surface and a back surface. The heat pipe is located in the slot of the first dielectric layer, and the buried component is coplanar with the heat pipe. The thermally conductive material fills the slot of the first dielectric layer and encloses the embedded component and the heat pipe. The second dielectric layer is located on one side of the first dielectric layer and covers the trench, wherein the back surface of the buried component faces the second dielectric layer, and the second dielectric layer includes a plurality of first holes, the embedded component and An orthographic projection of the heat pipe to the plane of the second dielectric layer overlaps the first holes. The heat conducting column is disposed in the first hole of the second dielectric layer, wherein the heat generated by the embedded component and the heat transferred to the heat pipe and the heat conductive material are transmitted through the heat conducting column.

在本發明的一實施例中,開槽凹陷於第一介電層的一表面。 In an embodiment of the invention, the groove is recessed in a surface of the first dielectric layer.

在本發明的一實施例中,上述的電路板結構更包括一第 三介電層以及導通孔。第三介電層位於第一介電層的另一側,其中內埋式元件的主動面朝向第三介電層。導通孔穿設於第三介電層且連接於內埋式元件的接墊。 In an embodiment of the invention, the circuit board structure further includes a first Three dielectric layers and vias. The third dielectric layer is on the other side of the first dielectric layer, wherein the active side of the buried component faces the third dielectric layer. The via hole is disposed through the third dielectric layer and is connected to the pad of the embedded component.

在本發明的一實施例中,上述的熱管封閉地或是非封閉地環繞內埋式元件。 In an embodiment of the invention, the heat pipe surrounds the embedded component in a closed or non-closed manner.

在本發明的一實施例中,上述的熱管的管徑(D)與第一介電層的厚度(t)的比值(D/t)小於等於1。 In an embodiment of the invention, the ratio (D/t) of the tube diameter (D) of the heat pipe to the thickness (t) of the first dielectric layer is less than or equal to 1.

本發明的一種電路板結構的製造方法,包括:提供一第一介電層,其中第一介電層包括一開槽;配置一內埋式元件及一熱管於第一介電層的開槽內,其中內埋式元件與熱管共平面,且內埋式元件包括相對的一主動面與一背面;填充一導熱材料至第一介電層的開槽,以包覆內埋式元件與熱管;形成一第二介電層於第一介電層的一側以覆蓋開槽,其中內埋式元件的背面朝向第二介電層;移除局部的第二介電層而形成多個第一孔洞,其中內埋式元件與熱管對第二介電層所在平面的正投影重疊於第一孔洞;以及形成多個導熱柱於第二介電層的第一孔洞,其中內埋式元件所產生的熱以及傳遞至熱管與導熱材料的熱可透過導熱柱傳出。 A method of fabricating a circuit board structure of the present invention includes: providing a first dielectric layer, wherein the first dielectric layer comprises a slot; and configuring a buried component and a heat pipe to slot the first dielectric layer The embedded component is coplanar with the heat pipe, and the embedded component includes an opposite active surface and a back surface; filling a heat conductive material to the first dielectric layer to cover the buried component and the heat pipe Forming a second dielectric layer on one side of the first dielectric layer to cover the trench, wherein the back surface of the buried component faces the second dielectric layer; removing the partial second dielectric layer to form a plurality of a hole in which an orthographic projection of the buried component and the heat pipe to the plane of the second dielectric layer overlaps the first hole; and a plurality of thermally conductive pillars are formed in the first hole of the second dielectric layer, wherein the embedded component The heat generated and the heat transferred to the heat pipe and the heat conductive material can be transmitted through the heat conducting column.

在本發明的一實施例中,上述的開槽貫穿第一介電層,在配置內埋式元件與熱管的步驟中,更包括:配置一離型層於第一介電層的一側;以及配置內埋式元件及熱管於離型層上,且內埋式元件及熱管位於開槽內。 In an embodiment of the present invention, the step of inserting the buried component into the first dielectric layer further includes: disposing a release layer on a side of the first dielectric layer; And the embedded component and the heat pipe are disposed on the release layer, and the embedded component and the heat pipe are located in the slot.

在本發明的一實施例中,上述在填充導熱材料至開槽的步驟之後,更包括:移除離型層;形成一第三介電層於第一介電層的另一側,其中內埋式元件的主動面朝向第三介電層;以及於第三介電層上形成一導通孔,其中導通孔連接於內埋式元件的一接墊。 In an embodiment of the invention, after the step of filling the heat conductive material to the trench, the method further comprises: removing the release layer; forming a third dielectric layer on the other side of the first dielectric layer, wherein The active surface of the buried component faces the third dielectric layer; and a via hole is formed on the third dielectric layer, wherein the via is connected to a pad of the buried component.

在本發明的一實施例中,上述的熱管封閉地或是非封閉地環繞內埋式元件。 In an embodiment of the invention, the heat pipe surrounds the embedded component in a closed or non-closed manner.

在本發明的一實施例中,上述的熱管的管徑(D)與第一介電層的厚度(t)的比值(D/t)小於等於1。 In an embodiment of the invention, the ratio (D/t) of the tube diameter (D) of the heat pipe to the thickness (t) of the first dielectric layer is less than or equal to 1.

在本發明的一實施例中,上述的導熱材料不導電。 In an embodiment of the invention, the thermally conductive material is non-conductive.

基於上述,本發明的電路板結構藉由在內埋式元件旁配置熱管,導熱材料包覆內埋式元件與熱管的設計,內埋式元件所產生的熱量能夠透過導熱材料傳至熱管,熱管內裝有兩相流體而能夠藉由兩相流體吸熱汽化來降溫。此外,導熱柱連接導熱材料、內埋式元件與熱管,內埋式元件所產生的熱以及傳遞至熱管與導熱材料的熱還能夠透過導熱柱傳出,而有效地散熱。另外,由於內埋式元件與熱管共平面,本發明的電路板結構具有較薄的厚度。 Based on the above, the circuit board structure of the present invention is configured by a heat pipe disposed adjacent to the buried component, and the heat conductive material covers the design of the embedded component and the heat pipe. The heat generated by the embedded component can be transmitted to the heat pipe through the heat conductive material, and the heat pipe The two-phase fluid is contained therein and can be cooled by endothermic vaporization of the two-phase fluid. In addition, the heat conducting column is connected with the heat conductive material, the embedded component and the heat pipe, and the heat generated by the embedded component and the heat transferred to the heat pipe and the heat conductive material can also be transmitted through the heat conducting column to effectively dissipate heat. In addition, since the embedded component is coplanar with the heat pipe, the circuit board structure of the present invention has a relatively thin thickness.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 The above described features and advantages of the invention will be apparent from the following description.

10‧‧‧離型層 10‧‧‧ release layer

100‧‧‧電路板結構 100‧‧‧Circuit board structure

110‧‧‧第一介電層 110‧‧‧First dielectric layer

112‧‧‧開槽 112‧‧‧ slotting

120‧‧‧內埋式元件 120‧‧‧Internal components

122‧‧‧主動面 122‧‧‧Active surface

124‧‧‧背面 124‧‧‧Back

126‧‧‧接墊 126‧‧‧ pads

130‧‧‧熱管 130‧‧‧heat pipe

140‧‧‧導熱材料 140‧‧‧thermal materials

150‧‧‧第二介電層 150‧‧‧Second dielectric layer

152‧‧‧第一孔洞 152‧‧‧ first hole

160‧‧‧導熱柱 160‧‧‧thermal column

170‧‧‧第三介電層 170‧‧‧ Third dielectric layer

180‧‧‧導通孔 180‧‧‧through holes

200‧‧‧電路板結構的製造方法 200‧‧‧Manufacturing method of circuit board structure

210~290‧‧‧步驟 210~290‧‧‧Steps

S‧‧‧表面 S‧‧‧ surface

圖1至圖6是依照本發明的一實施例的一種電路板結構的製造方法的示意圖。 1 to 6 are schematic views of a method of fabricating a circuit board structure in accordance with an embodiment of the present invention.

圖7是依照本發明的一實施例的一種電路板結構的製造方法的流程示意圖。 FIG. 7 is a flow chart showing a method of fabricating a circuit board structure in accordance with an embodiment of the invention.

圖1至圖6是依照本發明的一實施例的一種電路板結構的製造方法的示意圖。圖7是依照本發明的一實施例的一種電路板結構的製造方法的流程示意圖。請在參閱圖1至圖6的同時一起參考圖7,需說明的是,圖1至圖6僅是示意性地繪示,電路板結構100(標示於圖6)中各元件的尺寸比例並不以此為限制。 1 to 6 are schematic views of a method of fabricating a circuit board structure in accordance with an embodiment of the present invention. FIG. 7 is a flow chart showing a method of fabricating a circuit board structure in accordance with an embodiment of the invention. Please refer to FIG. 7 together with reference to FIG. 1 to FIG. 6. It should be noted that FIG. 1 to FIG. 6 are only schematic diagrams showing the size ratio of each component in the circuit board structure 100 (labeled in FIG. 6). Not limited to this.

本實施例的一種電路板結構的製造方法200,包括下列步驟:首先,如圖1所示,提供一第一介電層110,其中第一介電層110包括一開槽112(步驟210)。在本實施例中,開槽112貫穿第一介電層110。在其他實施例中,如圖1’所示,開槽112也可以不貫穿第一介電層110,而僅是凹陷於第一介電層110的表面S。 A manufacturing method 200 for a circuit board structure of the present embodiment includes the following steps. First, as shown in FIG. 1, a first dielectric layer 110 is provided, wherein the first dielectric layer 110 includes a slot 112 (step 210). . In the embodiment, the trench 112 penetrates through the first dielectric layer 110. In other embodiments, as shown in FIG. 1', the trench 112 may not penetrate the first dielectric layer 110, but only be recessed on the surface S of the first dielectric layer 110.

接著,如圖2所示,配置一內埋式元件120及一熱管130於第一介電層110的開槽112內,其中內埋式元件120與熱管130共平面,且內埋式元件120包括相對的一主動面122與一背面124(步驟220)。在本實施例中,由於開槽112貫穿第一介電層110,因此,在配置內埋式元件120與熱管130的步驟220中,更包括:配置一離型層10於第一介電層110的一側(步驟222)。之後,配 置內埋式元件120及熱管130於離型層10上,且內埋式元件120及熱管130位於開槽112內(步驟224)。在本實施例中,熱管130內裝有兩相流體而能夠藉由兩相流體吸熱汽化來降溫,此部分將於後面再進一步說明。 Next, as shown in FIG. 2, a buried component 120 and a heat pipe 130 are disposed in the trench 112 of the first dielectric layer 110, wherein the buried component 120 is coplanar with the heat pipe 130, and the buried component 120 An opposite active surface 122 and a back surface 124 are included (step 220). In this embodiment, since the trench 112 is penetrated through the first dielectric layer 110, the step 220 of disposing the buried component 120 and the heat pipe 130 further includes: disposing a release layer 10 on the first dielectric layer. One side of 110 (step 222). After that, match The embedded component 120 and the heat pipe 130 are disposed on the release layer 10, and the embedded component 120 and the heat pipe 130 are located in the slot 112 (step 224). In the present embodiment, the heat pipe 130 is provided with a two-phase fluid and can be cooled by endothermic vaporization of the two-phase fluid, which will be further described later.

在本實施例中,內埋式元件120的主動面122是在圖2的下方位置,背面124是在圖2的上方位置,內埋式元件120的主動面122上具有多個接墊126,內埋式元件120的主動面122放在離型層10上。當然,若在其中一個實施例中,開槽112不貫穿第一介電層110,而僅是凹陷於第一介電層110的表面S,內埋式元件120與熱管130也可以直接配置在開槽112的底部,而省去配置離型層10的步驟。 In the present embodiment, the active surface 122 of the embedded component 120 is in the lower position of FIG. 2, and the back surface 124 is in the upper position of FIG. 2, and the active surface 122 of the embedded component 120 has a plurality of pads 126 thereon. The active face 122 of the embedded component 120 is placed on the release layer 10. Of course, in one embodiment, the slot 112 does not penetrate the first dielectric layer 110, but is only recessed on the surface S of the first dielectric layer 110, and the buried component 120 and the heat pipe 130 may be directly disposed on The bottom of the groove 112 is grooved, and the step of disposing the release layer 10 is omitted.

如圖2所示,開槽112的高度大於內埋式元件120與熱管130的厚度。在本實施例中,熱管130的管徑(D)與第一介電層110的厚度(t)的比值(D/t)小於等於1。在本實施例中,熱管130採用微型化的熱管,透過熱管130的管徑尺寸限制在一定的範圍之中,而降低電路板結構100的尺寸。 As shown in FIG. 2, the height of the slot 112 is greater than the thickness of the embedded component 120 and the heat pipe 130. In the present embodiment, the ratio (D/t) of the tube diameter (D) of the heat pipe 130 to the thickness (t) of the first dielectric layer 110 is less than or equal to 1. In the present embodiment, the heat pipe 130 adopts a miniaturized heat pipe, and the size of the pipe through the heat pipe 130 is limited to a certain range, thereby reducing the size of the circuit board structure 100.

詳細地說,在本實施例中,透過將熱管130設置在與內埋式元件120共平面的位置,由於熱管130的管徑小於內埋式元件120的厚度,電路板結構100配置熱管130並不會對其厚度產生影響,而可保有原本較薄的厚度。當然,在其他實施例中,熱管130的管徑也可以大於內埋式元件120的厚度,但因為內埋式元件120與熱管130共平面,第一介電層110的厚度只要大於熱 管130的管徑即可同時容納內埋式元件120與熱管130,相較於內埋式元件120與熱管130不是共平面而是疊置的配置,本實施例的電路板結構100具有較小的厚度。此外,微型化的熱管130也可降低開槽112的長寬尺寸,而使電路板結構100的其他部分能夠具有更高的比例而提供給設計者運用。 In detail, in the present embodiment, by disposing the heat pipe 130 at a position coplanar with the embedded component 120, since the pipe diameter of the heat pipe 130 is smaller than the thickness of the embedded component 120, the circuit board structure 100 is configured with the heat pipe 130 and It does not affect its thickness, but it retains its original thin thickness. Of course, in other embodiments, the diameter of the heat pipe 130 may also be greater than the thickness of the buried component 120. However, since the buried component 120 is coplanar with the heat pipe 130, the thickness of the first dielectric layer 110 is greater than heat. The diameter of the tube 130 can accommodate the embedded element 120 and the heat pipe 130 at the same time. The circuit board structure 100 of the present embodiment has a smaller configuration than the embedded element 120 and the heat pipe 130 are not coplanar but stacked. thickness of. In addition, the miniaturized heat pipe 130 can also reduce the length and width dimensions of the slot 112, and enable other portions of the circuit board structure 100 to be provided at a higher ratio for use by the designer.

圖3是內埋式元件120與環繞於內埋式元件120外的熱管130的上視圖。如圖3所示,在本實施例中,熱管130呈非封閉的形狀,因此,熱管130是非封閉地環繞著內埋式元件120,但在其他實施例中,熱管130也可以是一封閉環形,而以封閉的形式環繞內埋式元件120。需說明的是,圖3僅示意性地繪示其中一種形式的熱管130,熱管130的形狀、口徑變化與環繞於內埋式元件120外的比例並不以此為限制。 3 is a top view of the buried component 120 and the heat pipe 130 surrounding the buried component 120. As shown in FIG. 3, in the present embodiment, the heat pipe 130 has a non-closed shape. Therefore, the heat pipe 130 surrounds the embedded component 120 in a non-closed manner, but in other embodiments, the heat pipe 130 may also be a closed ring. The embedded component 120 is surrounded by a closed form. It should be noted that FIG. 3 only schematically illustrates one form of the heat pipe 130. The shape and diameter of the heat pipe 130 and the ratio of the circumference of the heat pipe 130 are not limited thereto.

再來,如圖4所示,填充一導熱材料140至第一介電層110的開槽112,以包覆內埋式元件120與熱管130(步驟230)。在本實施例中,導熱材料140齊平於第一介電層110的上下表面,內埋式元件120在運作時所產生的熱能夠透過導熱材料140沿著水平方向傳至熱管130。熱管130內裝有兩相流體,兩相流體在吸熱之後會產生相變化而降溫。 Then, as shown in FIG. 4, a heat conductive material 140 is filled into the trench 112 of the first dielectric layer 110 to cover the buried component 120 and the heat pipe 130 (step 230). In the present embodiment, the heat conductive material 140 is flush with the upper and lower surfaces of the first dielectric layer 110, and the heat generated by the embedded component 120 during operation can be transmitted to the heat pipe 130 in the horizontal direction through the heat conductive material 140. The heat pipe 130 is provided with a two-phase fluid, and the two-phase fluid undergoes a phase change to cool down after the heat is absorbed.

值得注意的是,在本實施例中,導熱材料140僅導熱而不導電,以避免內埋式元件120的接墊126之間導通。導熱材料140可以是散熱膏,但導熱材料140的種類並不以此為限制。 It should be noted that in the present embodiment, the heat conductive material 140 is only thermally conductive and not electrically conductive to avoid conduction between the pads 126 of the embedded component 120. The heat conductive material 140 may be a thermal grease, but the type of the heat conductive material 140 is not limited thereto.

接著,如圖5所示,在填充導熱材料140至開槽112的 步驟230之後,更包括:移除離型層10(步驟270)。形成一第二介電層150於第一介電層110的一側以覆蓋開槽112,其中內埋式元件120的背面124朝向第二介電層150(步驟240)。形成一第三介電層170於第一介電層110的另一側,其中內埋式元件120的主動面122朝向第三介電層170(步驟280)。在本實施例中,如圖5所示,第二介電層150與第三介電層170分別被壓合至第一介電層110的上下相對兩面,之後,於第二介電層150上與第三介電層170下分別再形成兩導體層。 Next, as shown in FIG. 5, the heat conductive material 140 is filled to the trench 112. After step 230, the method further includes: removing the release layer 10 (step 270). A second dielectric layer 150 is formed on one side of the first dielectric layer 110 to cover the trench 112, wherein the back surface 124 of the buried component 120 faces the second dielectric layer 150 (step 240). A third dielectric layer 170 is formed on the other side of the first dielectric layer 110, wherein the active surface 122 of the buried component 120 faces the third dielectric layer 170 (step 280). In this embodiment, as shown in FIG. 5 , the second dielectric layer 150 and the third dielectric layer 170 are respectively pressed to the upper and lower opposite sides of the first dielectric layer 110 , and then to the second dielectric layer 150 . Two conductor layers are respectively formed on the upper and third dielectric layers 170.

在本實施例中,可先進行步驟270之後,同時進行步驟240與步驟280,當然,也可先進行步驟240之後再依序進行步驟270與步驟280,或是,也可先依序進行步驟270與步驟280之後再進行步驟240。也就是說,步驟的順序上並不受限制。 In this embodiment, step 270 may be performed first, and step 240 and step 280 may be performed at the same time. Of course, step 270 and step 280 may be performed after step 240, or steps may be sequentially performed. After step 280 and step 280, step 240 is performed. In other words, the order of the steps is not limited.

此外,在其中一個實施例中,若開槽112不貫穿第一介電層110,而僅是凹陷於第一介電層110的表面S,便不需進行步驟222的配置離型層10的步驟,則在此實施例中,也可以省去步驟270。此外,在此實施例中,由於開槽112不貫穿第一介電層110,開槽112的下方本來就還有部分的第一介電層110,因此也不需要進行步驟280。而可直接在第一介電層110的下側形成導體層。 In addition, in one embodiment, if the trench 112 does not penetrate the first dielectric layer 110 but is only recessed on the surface S of the first dielectric layer 110, the configuration of the release layer 10 of step 222 is not required. Step, in this embodiment, step 270 can also be omitted. In addition, in this embodiment, since the trench 112 does not penetrate the first dielectric layer 110, a portion of the first dielectric layer 110 is originally under the trench 112, and thus step 280 is not required. The conductor layer can be formed directly on the lower side of the first dielectric layer 110.

再來,如圖6所示,移除局部的第二介電層150而形成多個第一孔洞152,其中內埋式元件120與熱管130對第二介電層150所在平面的正投影重疊於這些第一孔洞152(步驟250)。也就 是說,在第二介電層150上的第一孔洞152的位置會對應於內埋式元件120與熱管130的位置。在進行步驟250時,可透過機械或是雷射鑽孔的方式在第二介電層150上形成第一孔洞152,此外,在本實施例中,除了在第二介電層150上對應於內埋式元件120與熱管130處鑽孔之外,還可在導熱材料140鑽孔於接近內埋式元件120與熱管130的位置。 Then, as shown in FIG. 6, the partial second dielectric layer 150 is removed to form a plurality of first holes 152, wherein the orthographic projection of the buried component 120 and the heat pipe 130 to the plane of the second dielectric layer 150 overlaps. These first holes 152 (step 250). Also That is, the position of the first hole 152 on the second dielectric layer 150 corresponds to the position of the buried element 120 and the heat pipe 130. When step 250 is performed, a first hole 152 may be formed on the second dielectric layer 150 by mechanical or laser drilling. Further, in the present embodiment, in addition to the second dielectric layer 150, In addition to drilling the buried component 120 and the heat pipe 130, the thermally conductive material 140 can also be drilled in a location proximate to the buried component 120 and the heat pipe 130.

接著,形成多個導熱柱160於第二介電層150的第一孔洞152,其中內埋式元件120所產生的熱以及傳遞至熱管130與導熱材料140的熱可透過導熱柱160傳出(步驟260)。於第三介電層170上形成導通孔180,其中導通孔180連接於內埋式元件的接墊126(步驟290)。再圖案化第二介電層150上方的導體層以及第三介電層170下方的導體層以形成兩線路層。 Next, a plurality of thermally conductive pillars 160 are formed in the first holes 152 of the second dielectric layer 150, wherein the heat generated by the buried component 120 and the heat transmitted to the heat pipe 130 and the heat conductive material 140 are transmitted through the heat conducting column 160 ( Step 260). A via hole 180 is formed on the third dielectric layer 170, wherein the via hole 180 is connected to the pad 126 of the embedded component (step 290). The conductor layer above the second dielectric layer 150 and the conductor layer under the third dielectric layer 170 are then patterned to form a two wiring layer.

在本實施例中,導熱柱160以垂直方向配置而連接導熱材料140、內埋式元件120與熱管130,內埋式元件120所產生的熱以及傳遞至熱管130與導熱材料140的熱還能夠透過導熱柱160沿垂直方向傳出,而有效地降低本實施例的電路板結構100的溫度。 In this embodiment, the heat conducting column 160 is disposed in a vertical direction to connect the heat conductive material 140, the embedded element 120 and the heat pipe 130, and the heat generated by the buried element 120 and the heat transferred to the heat pipe 130 and the heat conductive material 140 can also be The heat transfer column 160 is transmitted in the vertical direction to effectively lower the temperature of the circuit board structure 100 of the present embodiment.

此外,內埋式元件120的訊號也可以由接墊126經導通孔180與位於第三介電層170下方的線路層傳出。在本實施例中,導通孔180是實心的金屬柱,也可以是在孔璧形成導電層之空心通孔,亦可在其中塞入散熱之絕緣或非絕緣膏體,導通孔180的形式並不以此為限制,只要可以連接到內埋式元件的接墊126即 可。 In addition, the signal of the buried component 120 can also be transmitted from the pad 126 through the via 180 and the wiring layer under the third dielectric layer 170. In the embodiment, the via hole 180 is a solid metal pillar, or may be a hollow via hole in which a conductive layer is formed in the aperture, or an insulating or non-insulating paste may be inserted therein to dissipate heat, and the via hole 180 is in the form of Without being limited thereto, as long as it can be connected to the pad 126 of the embedded component, can.

同樣地,在本實施例中,電路板結構的製造方法200在順序上可先進行步驟250與步驟260之後再進行步驟290。或者,也可先進行步驟290之後再進行步驟250與步驟260。步驟順序上並不受限制。此外,在其中一個實施例中,若開槽112不貫穿第一介電層110,而僅是凹陷於第一介電層110的表面S,則可不用額外配置第三介電層170,而是在第一介電層在凹槽下方的部位形成導通孔180,其中導通孔180連接於內埋式元件120的接墊126來取代步驟290。 Similarly, in the present embodiment, the manufacturing method 200 of the circuit board structure may sequentially perform step 250 and step 260 before performing step 290. Alternatively, step 290 may be performed before step 250 and step 260. The order of the steps is not limited. In addition, in one embodiment, if the trench 112 does not penetrate the first dielectric layer 110 but is only recessed on the surface S of the first dielectric layer 110, the third dielectric layer 170 may not be additionally disposed. The via hole 180 is formed in a portion of the first dielectric layer below the recess, wherein the via hole 180 is connected to the pad 126 of the buried component 120 instead of the step 290.

圖6是依照本發明的一實施例的一種電路板結構的示意圖。請參閱圖6,本實施例的電路板結構100包括一第一介電層110、一內埋式元件120、一熱管130、一導熱材料140、一第二介電層150及多個導熱柱160。第一介電層110包括一開槽112。內埋式元件120位於第一介電層110的開槽112內,且包括相對的一主動面122與一背面124。熱管130位於第一介電層110的開槽112內,內埋式元件120與熱管130共平面。導熱材料140填充於第一介電層110的開槽112且包覆內埋式元件120與熱管130。第二介電層150位於第一介電層110的一側並覆蓋開槽112,其中內埋式元件120的背面124朝向第二介電層150,第二介電層150包括多個第一孔洞152,內埋式元件120與熱管130對第二介電層150所在平面的正投影重疊於第一孔洞152。導熱柱160配置於第二介電層150的第一孔洞152。 6 is a schematic diagram of a circuit board structure in accordance with an embodiment of the present invention. Referring to FIG. 6 , the circuit board structure 100 of the present embodiment includes a first dielectric layer 110 , a buried component 120 , a heat pipe 130 , a heat conductive material 140 , a second dielectric layer 150 , and a plurality of heat conducting columns. 160. The first dielectric layer 110 includes a slot 112. The buried component 120 is located in the trench 112 of the first dielectric layer 110 and includes an opposite active surface 122 and a back surface 124. The heat pipe 130 is located within the slot 112 of the first dielectric layer 110, and the buried component 120 is coplanar with the heat pipe 130. The heat conductive material 140 is filled in the trench 112 of the first dielectric layer 110 and covers the buried component 120 and the heat pipe 130. The second dielectric layer 150 is located on one side of the first dielectric layer 110 and covers the trench 112. The back surface 124 of the buried component 120 faces the second dielectric layer 150, and the second dielectric layer 150 includes a plurality of first layers. The hole 152, the orthographic projection of the embedded component 120 and the heat pipe 130 to the plane of the second dielectric layer 150 overlaps the first hole 152. The heat conducting column 160 is disposed on the first hole 152 of the second dielectric layer 150.

藉由上述的元件配置,當本實施例中電路板結構100的內埋式元件120在運作時所產生的熱能夠透過導熱材料140沿著水平方向傳至熱管130。熱管130內裝有兩相流體,兩相流體在吸熱之後會產生相變化而降溫。此外,導熱柱160以垂直方向配置而連接導熱材料140、內埋式元件120與熱管130,內埋式元件120所產生的熱以及傳遞至熱管130與導熱材料140的熱還能夠透過導熱柱160沿垂直方向傳出,而有效地降低本實施例的電路板結構100的溫度。 With the above-described component arrangement, the heat generated by the embedded component 120 of the circuit board structure 100 in the present embodiment can be transmitted to the heat pipe 130 in the horizontal direction through the heat conductive material 140. The heat pipe 130 is provided with a two-phase fluid, and the two-phase fluid undergoes a phase change to cool down after the heat is absorbed. In addition, the heat conducting column 160 is disposed in a vertical direction to connect the heat conductive material 140, the embedded element 120 and the heat pipe 130, and the heat generated by the buried element 120 and the heat transferred to the heat pipe 130 and the heat conductive material 140 can also pass through the heat conducting column 160. It is transmitted in the vertical direction to effectively lower the temperature of the circuit board structure 100 of the present embodiment.

綜上所述,本發明的電路板結構藉由在內埋式元件旁配置熱管,導熱材料包覆內埋式元件與熱管的設計,內埋式元件所產生的熱量能夠透過導熱材料傳至熱管,熱管內裝有兩相流體而能夠藉由兩相流體吸熱汽化來降溫。此外,導熱柱連接導熱材料、內埋式元件與熱管,內埋式元件所產生的熱以及傳遞至熱管與導熱材料的熱還能夠透過導熱柱傳出,而有效地散熱。另外,由於內埋式元件與熱管共平面,本案的電路板結構具有較薄的厚度。 In summary, the circuit board structure of the present invention is configured by a heat pipe disposed adjacent to the buried component, and the heat conductive material covers the design of the embedded component and the heat pipe, and the heat generated by the embedded component can be transmitted to the heat pipe through the heat conductive material. The heat pipe is filled with a two-phase fluid and can be cooled by endothermic vaporization of the two-phase fluid. In addition, the heat conducting column is connected with the heat conductive material, the embedded component and the heat pipe, and the heat generated by the embedded component and the heat transferred to the heat pipe and the heat conductive material can also be transmitted through the heat conducting column to effectively dissipate heat. In addition, since the embedded component is coplanar with the heat pipe, the circuit board structure of the present invention has a relatively thin thickness.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,故本發明之保護範圍當視後附之申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. The scope of the invention is defined by the scope of the appended claims.

100‧‧‧電路板結構 100‧‧‧Circuit board structure

110‧‧‧第一介電層 110‧‧‧First dielectric layer

112‧‧‧開槽 112‧‧‧ slotting

120‧‧‧內埋式元件 120‧‧‧Internal components

122‧‧‧主動面 122‧‧‧Active surface

124‧‧‧背面 124‧‧‧Back

126‧‧‧接墊 126‧‧‧ pads

130‧‧‧熱管 130‧‧‧heat pipe

140‧‧‧導熱材料 140‧‧‧thermal materials

150‧‧‧第二介電層 150‧‧‧Second dielectric layer

152‧‧‧第一孔洞 152‧‧‧ first hole

160‧‧‧導熱柱 160‧‧‧thermal column

170‧‧‧第三介電層 170‧‧‧ Third dielectric layer

180‧‧‧導通孔 180‧‧‧through holes

Claims (10)

一種電路板結構的製造方法,包括:提供一第一介電層,其中該第一介電層包括一開槽;配置一內埋式元件及一熱管於該第一介電層的該開槽內,其中該內埋式元件與該熱管共平面,且該內埋式元件包括相對的一主動面與一背面;填充一導熱材料至該第一介電層的該開槽,以包覆該內埋式元件與該熱管;形成一第二介電層於該第一介電層的一側以覆蓋該開槽,其中該內埋式元件的該背面朝向該第二介電層;移除局部的該第二介電層而形成多個第一孔洞,其中該內埋式元件與該熱管對該第二介電層所在平面的正投影重疊於該些第一孔洞;以及形成多個導熱柱於該第二介電層的該些第一孔洞,其中該內埋式元件所產生的熱以及傳遞至該熱管與該導熱材料的熱透過該導熱柱傳出。 A method for fabricating a circuit board structure includes: providing a first dielectric layer, wherein the first dielectric layer comprises a slot; and configuring a buried component and a heat pipe to the slot of the first dielectric layer Internally, wherein the embedded component is coplanar with the heat pipe, and the embedded component includes an opposite active surface and a back surface; filling a heat conductive material to the opening of the first dielectric layer to cover the a buried component and the heat pipe; forming a second dielectric layer on a side of the first dielectric layer to cover the trench, wherein the back surface of the buried component faces the second dielectric layer; Forming a plurality of first holes by the second dielectric layer, wherein the buried element and the orthographic projection of the heat pipe on the plane of the second dielectric layer overlap the first holes; and forming a plurality of heat conduction The first holes are in the second dielectric layer, wherein the heat generated by the embedded component and the heat transferred to the heat pipe and the heat conductive material are transmitted through the heat conducting column. 如申請專利範圍第1項所述的電路板結構的製造方法,其中該開槽貫穿該第一介電層,在配置該內埋式元件與該熱管的步驟中,更包括:配置一離型層於該第一介電層的一側;以及配置該內埋式元件及該熱管於該離型層上,且該內埋式元件及該熱管位於該開槽內。 The method for manufacturing a circuit board structure according to the first aspect of the invention, wherein the slot is inserted through the first dielectric layer, and in the step of disposing the embedded component and the heat pipe, further comprising: disposing a release type Laminating on one side of the first dielectric layer; and arranging the buried component and the heat pipe on the release layer, and the buried component and the heat pipe are located in the slot. 如申請專利範圍第2項所述的電路板結構的製造方法,其中在填充該導熱材料至該開槽的步驟之後,更包括:移除該離型層;形成一第三介電層於該第一介電層的另一側,其中該內埋式元件的該主動面朝向該第三介電層;以及於該第三介電層上形成一導通孔,其中該導通孔連接於該內埋式元件的一接墊。 The manufacturing method of the circuit board structure of claim 2, wherein after the step of filling the thermally conductive material to the grooving, the method further comprises: removing the release layer; forming a third dielectric layer thereon The other side of the first dielectric layer, wherein the active surface of the buried component faces the third dielectric layer; and a via hole is formed on the third dielectric layer, wherein the via hole is connected thereto A pad of the buried component. 如申請專利範圍第1項所述的電路板結構的製造方法,其中該熱管封閉地或是非封閉地環繞該內埋式元件。 The method of fabricating a circuit board structure according to claim 1, wherein the heat pipe surrounds the embedded component in a closed or non-closed manner. 如申請專利範圍第1項所述的電路板結構的製造方法,其中該熱管的管徑與該第一介電層的厚度的比值小於等於1。 The method of manufacturing a circuit board structure according to claim 1, wherein a ratio of a diameter of the heat pipe to a thickness of the first dielectric layer is less than or equal to one. 一種電路板結構,包括:一第一介電層,包括一開槽;一內埋式元件,位於該第一介電層的該開槽內,且包括相對的一主動面與一背面;一熱管,位於該第一介電層的該開槽內,該內埋式元件與該熱管共平面;一導熱材料,填充於該第一介電層的該開槽且包覆該內埋式元件與該熱管;一第二介電層,位於該第一介電層的一側並覆蓋該開槽,其中該內埋式元件的該背面朝向該第二介電層,該第二介電層包括多個第一孔洞,該內埋式元件與該熱管對該第二介電層所在平面 的正投影重疊於該些第一孔洞;以及多個導熱柱,配置於該第二介電層的該些第一孔洞,其中該內埋式元件所產生的熱以及傳遞至該熱管與該導熱材料的熱透過該導熱柱傳出。 A circuit board structure comprising: a first dielectric layer comprising a slot; a buried component located in the slot of the first dielectric layer and including an opposite active surface and a back surface; a heat pipe disposed in the slot of the first dielectric layer, the buried component being coplanar with the heat pipe; a heat conductive material filling the slot of the first dielectric layer and covering the buried component And a heat pipe; a second dielectric layer on one side of the first dielectric layer and covering the trench, wherein the back surface of the buried component faces the second dielectric layer, the second dielectric layer Include a plurality of first holes, the buried element and the plane of the heat pipe to the second dielectric layer The front projection overlaps the first holes; and the plurality of heat conducting columns are disposed on the first holes of the second dielectric layer, wherein heat generated by the buried component is transmitted to the heat pipe and the heat conduction The heat of the material is transmitted through the thermally conductive column. 如申請專利範圍第6項所述的電路板結構,其中該開槽凹陷於該第一介電層的一表面。 The circuit board structure of claim 6, wherein the slot is recessed on a surface of the first dielectric layer. 如申請專利範圍第6項所述的電路板結構,更包括:一第三介電層,位於該第一介電層的另一側,其中該內埋式元件的該主動面朝向該第三介電層;以及一導通孔,穿設於該第三介電層且連接於該內埋式元件的一接墊。 The circuit board structure of claim 6, further comprising: a third dielectric layer on the other side of the first dielectric layer, wherein the active surface of the embedded component faces the third a dielectric layer; and a via hole extending through the third dielectric layer and connected to a pad of the buried component. 如申請專利範圍第6項所述的電路板結構,其中該熱管封閉地或是非封閉地環繞該內埋式元件。 The circuit board structure of claim 6, wherein the heat pipe surrounds the buried component in a closed or non-closed manner. 如申請專利範圍第6項所述的電路板結構,其中該熱管的管徑與該第一介電層的厚度的比值小於等於1。 The circuit board structure of claim 6, wherein a ratio of a diameter of the heat pipe to a thickness of the first dielectric layer is less than or equal to one.
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US20130027896A1 (en) * 2011-07-29 2013-01-31 Samsung Electro-Mechanics Co., Ltd. Electronic component embedded printed circuit board and method of manufacturing the same
TW201400148A (en) * 2012-03-28 2014-01-01 Taiko Pharmaceutical Co Ltd Pharmaceutical composition and soft capsule containing the composition sealed therein
TWM475138U (en) * 2013-10-29 2014-03-21 Acer Inc Heat dissipation module and electronic device

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Publication number Priority date Publication date Assignee Title
US20130027896A1 (en) * 2011-07-29 2013-01-31 Samsung Electro-Mechanics Co., Ltd. Electronic component embedded printed circuit board and method of manufacturing the same
TW201400148A (en) * 2012-03-28 2014-01-01 Taiko Pharmaceutical Co Ltd Pharmaceutical composition and soft capsule containing the composition sealed therein
TWM475138U (en) * 2013-10-29 2014-03-21 Acer Inc Heat dissipation module and electronic device

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