TWI601203B - Single-wafer rotary etching cleaning machine fluid collection device - Google Patents
Single-wafer rotary etching cleaning machine fluid collection device Download PDFInfo
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Description
本發明係關於一種單晶圓旋轉蝕刻清洗機台之流體收集裝置,更特別的是關於一種利用上下作動導引流體之蓋盤而可將不同流體分別收集於對應之回收盤的流體收集裝置。 BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a fluid collection device for a single wafer rotary etch cleaning machine, and more particularly to a fluid collection device for separately collecting different fluids in a corresponding recovery tray by using a cover disk for actuating the fluid up and down.
濕式蝕刻為目前半導體製程當中不可或缺之程序之一,一般來說,半導體單晶圓在濕式蝕刻的過程中會經過多道蝕刻清洗的程序,例如,先以A酸進行第一次蝕刻,接著以B酸進行第二次蝕刻,最後再以去離子水沖洗洗淨,而基於成本考量,該等使用過的蝕刻液需要進行回收再利用,因此,習用之旋轉蝕刻裝置係設有多個蝕刻液收集槽,藉由將各該蝕刻液收集槽整體相對於放置單晶圓之轉盤上下作動,或者將放置單晶圓之轉盤相對於蝕刻液收集槽上下作動的方式,來分別收集不同之蝕刻液,以避免蝕刻液之間的混摻而造成汙染或發生化學變化而造成危險之情況。 Wet etching is one of the indispensable procedures in the current semiconductor manufacturing process. Generally, a semiconductor single wafer undergoes multiple etching and cleaning processes during wet etching, for example, first with A acid. Etching, followed by a second etching with B acid, and finally rinsed with deionized water, and based on cost considerations, the used etching liquid needs to be recycled and reused. Therefore, the conventional rotary etching apparatus is provided. The plurality of etching liquid collecting tanks are respectively collected by moving the entire etching liquid collecting tank up and down with respect to the turntable on which the single wafer is placed, or by moving the single wafer rotating disc up and down with respect to the etching liquid collecting tank. Different etching solutions to avoid contamination or chemical changes caused by mixing between etching solutions.
若旋轉蝕刻裝置在操作上係以將各該蝕刻液收集槽整體相對於放置單晶圓之轉盤上下作動的方式(即單晶圓不動而蝕刻液回收槽上下移動),來收集不同的蝕刻液,則與各該蝕刻液收集槽連接之排液管只能採用軟式管,且需加幫浦以將收集到的蝕刻液輸送至回收桶,同時有不易清洗蝕刻液收集槽內部之問題,從而造成軟式管中殘留蝕刻液並因清洗不乾淨而有造成污染之疑慮。 If the rotary etching apparatus is operated to collect the entire etching liquid collection tank in a manner of moving up and down with respect to the single-wafer rotating disk (that is, the single-wafer is not moved and the etching liquid recovery tank moves up and down), different etching liquids are collected. , the liquid pipe connected to each of the etching liquid collecting tanks can only adopt a soft tube, and a pump is needed to transport the collected etching liquid to the recycling barrel, and at the same time, it is difficult to clean the inside of the etching liquid collecting tank, thereby This causes the etchant to remain in the flexible tube and causes contamination due to dirty cleaning.
若旋轉蝕刻裝置在操作上係以將放置單晶圓之轉盤及單晶圓整體相對於蝕刻液收集槽上下作動的方式(即單晶圓上下移動而蝕刻液收集槽不動),來收集不同的蝕刻液,則有容易造成單晶圓的震動而使其破裂之風險,亦有不易清洗蝕刻液收集槽內部之問題。 If the rotary etching apparatus is operated in such a manner that the single-wafer turntable and the single wafer are moved up and down with respect to the etching liquid collecting tank (that is, the single wafer moves up and down and the etching liquid collecting tank does not move), different collections are collected. The etching liquid has a risk of easily causing vibration of a single wafer to be broken, and it is also difficult to clean the inside of the etching liquid collecting tank.
基於上述習用之旋轉蝕刻裝置之蝕刻液收集槽的缺失,提供一種單晶圓旋轉蝕刻清洗機台之流體收集裝置,使該流體收集裝置具有排液管有多種選擇性且不需增加幫浦以將收集到的蝕刻液輸送至回收桶以及容易清洗該流體收集裝置內部之優點係為本發明所欲積極揭露之處。 Based on the absence of the etchant collection tank of the conventional rotary etching apparatus, a fluid collection device for a single wafer rotary etching cleaning machine is provided, which has a plurality of selective discharge pipes and no need to increase the pump. The advantages of transporting the collected etchant to the recovery tank and easily cleaning the interior of the fluid collection device are those that are actively disclosed in the present invention.
本發明之主要目的在於改善習用之旋轉蝕刻裝置有蝕刻液回收管之形式可選擇性少及不易清洗蝕刻液回收槽內部之問題。 SUMMARY OF THE INVENTION The main object of the present invention is to improve the conventional rotary etching apparatus which has a problem that the etching liquid recovery tube is less selective and difficult to clean the inside of the etching liquid recovery tank.
為達上述目的及其他目的,本發明提出一種單晶圓旋轉蝕刻清洗機台之流體收集裝置,用於收集蝕刻單晶圓之一流體,包含:一轉盤,係固定及旋轉一單晶圓;至少一回收盤,係固設於該轉盤之外緣,用以收集該單晶圓旋轉時甩出的該流體;至少一蓋盤,係對應並蓋設於該回收盤上,用以導引該流體流至該回收盤中;至少一升降組,該升降組包括對稱之二升降單元,該升降組係連設於該蓋盤,用以相對於該轉盤及該回收盤而上下作動該蓋盤。 To achieve the above and other objects, the present invention provides a fluid collection device for a single wafer rotary etch cleaning machine for collecting and etching a fluid of a single wafer, comprising: a turntable for fixing and rotating a single wafer; At least one recovery tray is fixed on the outer edge of the turntable for collecting the fluid that is ejected when the single wafer is rotated; at least one cover tray is correspondingly disposed on the recovery tray for guiding The fluid flows into the recovery tray; at least one lift group, the lift group includes a symmetrical second lift unit, the lift group is connected to the cover tray for actuating the cover up and down with respect to the turntable and the recovery tray plate.
於本發明之一實施例中,其中該蓋盤係一環狀且中央部具有一徑向開口。 In an embodiment of the invention, the cover disk has an annular shape and a central portion has a radial opening.
於本發明之一實施例中,其中該徑向開口與該轉盤之外周距離1~10mm。 In an embodiment of the invention, the radial opening is spaced from the outer circumference of the turntable by a distance of 1 to 10 mm.
於本發明之一實施例中,其中該徑向開口與該轉盤之外周距離較佳為3~5mm。 In an embodiment of the invention, the radial opening and the outer circumference of the turntable are preferably 3 to 5 mm.
於本發明之一實施例中,其中該回收盤係一環狀。 In an embodiment of the invention, the recovery tray is annular.
於本發明之一實施例中,其中該蓋盤更具有一導引頂壁及一導引側壁,該導引頂壁係朝外方傾斜之環狀頂面,該導引側壁係該蓋盤之側面,該導引側壁之一部分係與該回收盤的側壁之一部分相互重疊。 In an embodiment of the present invention, the cover disk further has a guiding top wall and a guiding side wall, wherein the guiding top wall is an annular top surface inclined toward the outside, and the guiding side wall is the cover disk On one side, a portion of the guiding side wall overlaps with a portion of the side wall of the recovery tray.
於本發明之一實施例中,其中該回收盤與該蓋盤的數目係相等。 In an embodiment of the invention, the recovery tray is equal in number to the cover tray.
於本發明之一實施例中,其中該回收盤係連接一回收管,用以排出該流體。 In an embodiment of the invention, the recovery tray is connected to a recovery tube for discharging the fluid.
藉此,本發明之流體收集裝置藉由固定不動的回收盤與轉盤及相對於回收盤及轉盤而可上下作動的蓋盤,來完成導引不同之流體流至對應的回收盤,並且由於回收盤係固定不動,因此連接該回收盤的回收管可選擇使用硬式管或軟式管,以及由於回收盤與蓋盤係可分離,因此可容易地清洗該回收盤的內部。 Thereby, the fluid collecting device of the present invention completes guiding different fluids to the corresponding recovery tray by the stationary fixed recovery tray and the turntable and the cover tray which can be moved up and down with respect to the recovery tray and the turntable, and is recovered due to recycling. Since the tray is fixed, the recovery tube connected to the recovery tray can be selected to use a hard tube or a flexible tube, and since the recovery tray is separable from the cover tray, the inside of the recovery tray can be easily cleaned.
1‧‧‧流體收集裝置 1‧‧‧Fluid collecting device
10‧‧‧轉盤 10‧‧‧ Turntable
101‧‧‧轉軸 101‧‧‧ shaft
11‧‧‧回收盤 11‧‧‧Recycling tray
111‧‧‧第一回收盤 111‧‧‧First recovery tray
112‧‧‧第二回收盤 112‧‧‧Second recovery tray
113‧‧‧第三回收盤 113‧‧‧ Third recovery tray
114‧‧‧第一回收盤側壁 114‧‧‧First recovery tray side wall
115‧‧‧第二回收盤側壁 115‧‧‧Second recovery tray side wall
116‧‧‧第三回收盤側壁 116‧‧‧ Third recovery tray side wall
12‧‧‧回收管 12‧‧‧Recycling tube
121‧‧‧第一回收管 121‧‧‧First recovery pipe
122‧‧‧第二回收管 122‧‧‧Second recovery pipe
123‧‧‧第三回收管 123‧‧‧ Third recovery pipe
13‧‧‧通孔 13‧‧‧through hole
131‧‧‧第一通孔 131‧‧‧First through hole
131’‧‧‧第一通孔 131’‧‧‧ first through hole
132‧‧‧第二通孔 132‧‧‧Second through hole
132’‧‧‧第二通孔 132’‧‧‧second through hole
133‧‧‧第三通孔 133‧‧‧ third through hole
133’‧‧‧第三通孔 133’‧‧‧ third through hole
14‧‧‧蓋盤 14‧‧‧ Cover
141‧‧‧第一蓋盤 141‧‧‧First cover
141a‧‧‧第一導引頂壁 141a‧‧‧First guiding top wall
141b‧‧‧第一導引側壁 141b‧‧‧First guiding side wall
142‧‧‧第二蓋盤 142‧‧‧Second cover
142a‧‧‧第二導引頂壁 142a‧‧‧Second guiding top wall
142b‧‧‧第二導引側壁 142b‧‧‧Second guiding side wall
143‧‧‧第三蓋盤 143‧‧‧The third cover
143a‧‧‧第三導引頂壁 143a‧‧‧3rd guiding top wall
143b‧‧‧第三導引側壁 143b‧‧‧ third guiding sidewall
15‧‧‧升降組 15‧‧‧ Lifting group
151‧‧‧第一升降單元 151‧‧‧First lifting unit
151’‧‧‧第一升降單元 151’‧‧‧First Lifting Unit
152‧‧‧第二升降單元 152‧‧‧Second lifting unit
152’‧‧‧第二升降單元 152’‧‧‧Second lifting unit
153‧‧‧第三升降單元 153‧‧‧ third lifting unit
153’‧‧‧第三升降單元 153’‧‧‧ Third Lifting Unit
20‧‧‧噴嘴 20‧‧‧ nozzle
d‧‧‧距離 D‧‧‧distance
W‧‧‧單晶圓 W‧‧‧Single wafer
〔圖1〕係為本發明一實施例中之流體收集裝置的開蓋示意圖。 FIG. 1 is a schematic view showing the opening of a fluid collecting device according to an embodiment of the present invention.
〔圖2〕係為本發明一實施例中之流體收集裝置的下視圖。 Fig. 2 is a bottom view of the fluid collecting device in an embodiment of the present invention.
〔圖3〕係為本發明一實施例中之流體收集裝置的截面示意圖。 Fig. 3 is a schematic cross-sectional view showing a fluid collecting device in an embodiment of the present invention.
〔圖4〕係為本發明一實施例中之流體收集裝置的第一使用狀態截面示意圖。 Fig. 4 is a schematic cross-sectional view showing the first use state of the fluid collecting device in an embodiment of the present invention.
〔圖5〕係為本發明一實施例中之流體收集裝置的第二使用狀態截面示意圖。 Fig. 5 is a schematic cross-sectional view showing a second use state of the fluid collecting device in an embodiment of the present invention.
〔圖6〕係為本發明一實施例中之流體收集裝置的第三使用狀態截面示意圖。 Fig. 6 is a schematic cross-sectional view showing a third use state of the fluid collecting device in an embodiment of the present invention.
〔圖7〕係為本發明一實施例中之流體收集裝置的第四使用狀態截面示意圖。 Fig. 7 is a schematic cross-sectional view showing a fourth use state of the fluid collecting device in an embodiment of the present invention.
為充分瞭解本發明之目的、特徵及功效,茲藉由下述具體之實施例,並配合所附之圖式,對本發明做一詳細說明,說明如後:請參考圖1~圖4,本發明之流體收集裝置1,係用於收集單晶圓W旋轉蝕刻時甩出的一流體,該流體收集裝置1包含一轉盤10、至少一回收盤11、至少一蓋盤14及至少一升降組15。 In order to fully understand the object, features and effects of the present invention, the present invention will be described in detail by the following specific embodiments and the accompanying drawings, which are illustrated as follows: Please refer to FIG. 1 to FIG. The fluid collecting device 1 of the present invention is for collecting a fluid that is ejected during a single wafer W-rotation etching. The fluid collecting device 1 includes a turntable 10, at least one recovery tray 11, at least one cover tray 14, and at least one lifting group. 15.
該轉盤10係連設一轉軸101,以固定及旋轉一單晶圓W。 The turntable 10 is connected with a rotating shaft 101 for fixing and rotating a single wafer W.
該回收盤11係一環狀且固設於該轉盤之外緣,用以收集該單晶圓W旋轉時甩出的該流體,該回收盤11係連接一回收管12以排出該流體,該回收管12再連接一回收桶(圖未示)以承接通過該回收管12排出的流體。 The recovery tray 11 is annular and fixed on the outer edge of the turntable for collecting the fluid that is ejected when the single wafer W is rotated. The recovery tray 11 is connected to a recovery tube 12 for discharging the fluid. The recovery pipe 12 is further connected to a recovery tank (not shown) to receive the fluid discharged through the recovery pipe 12.
該回收盤11包括一第一回收盤111、一第二回收盤112及一第三回收盤113,其中該第一回收盤111係固設於最靠近該轉盤10者,該第三回收盤113係固設於最遠離該轉盤10者,該第二回收盤112係固設於該第一回收盤111及該第三回收盤113之間。該第一回收盤111具有一第一回收盤側壁114,該第二回收盤112具有一第二回收盤側壁115,該第三回收盤113具有一第三回收盤側壁116。該第一回收盤111、該第二回收盤112及該第三回收盤113的底部係呈一凹槽狀。該第一回收盤111、該第二回收盤112及該第三回收盤113 係分別連接一第一回收管121、一第二回收管122及一第三回收管123,以分別排出不同之流體。 The recovery tray 11 includes a first recovery tray 111, a second recovery tray 112, and a third recovery tray 113. The first recovery tray 111 is fixed to the closest to the rotary tray 10. The third recovery tray 113 The second recovery tray 112 is fixed between the first recovery tray 111 and the third recovery tray 113. The first recovery tray 111 has a first recovery tray sidewall 114, the second recovery tray 112 has a second recovery tray sidewall 115, and the third recovery tray 113 has a third recovery tray sidewall 116. The bottoms of the first recovery tray 111, the second recovery tray 112, and the third recovery tray 113 are in a groove shape. The first recovery tray 111, the second recovery tray 112, and the third recovery tray 113 A first recovery pipe 121, a second recovery pipe 122 and a third recovery pipe 123 are respectively connected to discharge different fluids.
該蓋盤14係一環狀且具有一徑向開口,以蓋設於該回收盤11上,用以導引該流體流至該回收盤11中。該蓋盤14包括一第一蓋盤141、一第二蓋盤142及一第三蓋盤143,其中該第一蓋盤141係對應蓋設該第一回收盤111,該第二蓋盤142係對應蓋設該第二回收盤112,該第三蓋盤143係對應蓋設該第三回收盤113。該第一蓋盤141、該第二蓋盤142及該第三蓋盤143之徑向開口與該轉盤10的外周之距離d可為1~10mm,較佳的距離d為3~5mm,以避免使用時因旋轉之該單晶圓W的離心力而朝外飛散的流體會噴濺至非對應收集該流體之回收盤。 The cover tray 14 is annular and has a radial opening for covering the recovery tray 11 for guiding the fluid to the recovery tray 11. The cover tray 14 includes a first cover tray 141, a second cover tray 142, and a third cover tray 143. The first cover tray 141 is correspondingly disposed to cover the first recovery tray 111. The second cover tray 142 The second recovery tray 112 is correspondingly disposed, and the third cover tray 143 is corresponding to the third recovery tray 113. The distance d between the radial opening of the first cover disk 141, the second cover disk 142 and the third cover disk 143 and the outer circumference of the turntable 10 may be 1 to 10 mm, and the preferred distance d is 3 to 5 mm. The fluid that is scattered outward due to the centrifugal force of the single wafer W that is rotated during use is prevented from being sprayed onto the recovery tray that does not correspond to the collection of the fluid.
該第一蓋盤141具有一第一導引頂壁141a及一第一導引側壁141b,該第二蓋盤142具有一第二導引頂壁142a及一第二導引側壁142b,該第三蓋盤143具有一第三導引頂壁143a及一第三導引側壁143b。該第一導引頂壁141a、該第二導引頂壁142a及該第三導引頂壁143a係朝外方傾斜之環狀頂面,用以提供單晶圓W甩出之流體之撞擊,再將流體分別導引至該第一回收盤111、該第二回收盤112及該第三回收盤113。該第一導引側壁141b、該第二導引側壁142b及該第三導引側壁143b的一部分係分別與該第一回收盤側壁114、該第二回收盤側壁115及該第三回收盤側壁116的一部分相互重疊,以確保單晶圓W甩出之流體不會滲出該第一回收盤111、該第二回收盤112及該第三回收盤113而造成流體之間的汙染。 The first cover disk 141 has a first guiding top wall 141a and a first guiding side wall 141b. The second cover disk 142 has a second guiding top wall 142a and a second guiding side wall 142b. The three cover disk 143 has a third guiding top wall 143a and a third guiding side wall 143b. The first guiding top wall 141a, the second guiding top wall 142a and the third guiding top wall 143a are outwardly inclined annular top surfaces for providing a single wafer W impacting fluid impact And directing the fluid to the first recovery tray 111, the second recovery tray 112, and the third recovery tray 113, respectively. The first guiding sidewall 141b, the second guiding sidewall 142b and a portion of the third guiding sidewall 143b are respectively associated with the first recovery tray sidewall 114, the second recovery tray sidewall 115 and the third recovery tray sidewall A portion of 116 overlaps each other to ensure that the fluid that is ejected from the single wafer W does not seep out of the first recovery tray 111, the second recovery tray 112, and the third recovery tray 113, causing contamination between the fluids.
該升降組15包括第一升降組、第二升降組及第三升降組,其中該第一升降組包括對稱之第一升降單元151,151’,該第二升降組包括對稱之第二升降單元152,152’,該第三升降組包括對稱之第三升降單元153,153’。 The hoisting group 15 includes a first hoisting group, a second hoisting group, and a third hoisting group, wherein the first hoisting group includes a symmetrical first lifting unit 151, 151', and the second hoisting group includes a symmetrical second lifting unit 152, 152' The third lifting group includes a symmetrical third lifting unit 153, 153'.
該第一回收盤側壁114、該第二回收盤側壁115及該第三回收盤側壁116分別於同一徑向上設有一對第一通孔131,131’、第二通孔132,132’及第三通孔133,133’,以分別穿設第一升降單元151,151’、第二升降單元152,152’及第三升降單元153,153’。 The first recovery tray side wall 114, the second recovery tray side wall 115 and the third recovery tray side wall 116 are respectively provided with a pair of first through holes 131, 131', second through holes 132, 132' and third through holes 133, 133 in the same radial direction. ', to respectively pass the first lifting unit 151, 151', the second lifting unit 152, 152' and the third lifting unit 153, 153'.
第一升降單元151,151’、第二升降單元152,152’及第三升降單元153,153’係分別穿過第一通孔131,131’、第二通孔132,132’及第三通孔133,133’,而與該第一導引側壁141b、該第二導引側壁142b及該第三導引側壁143b相連接,以將該第一蓋盤141、該第二蓋盤142及該第三蓋盤143相對於該第一回收盤111、該第二回收盤112、該第三回收盤113及該轉盤10而上下作動。 The first lifting unit 151, 151', the second lifting unit 152, 152' and the third lifting unit 153, 153' respectively pass through the first through holes 131, 131', the second through holes 132, 132' and the third through holes 133, 133', and the first The guiding sidewall 141b, the second guiding sidewall 142b and the third guiding sidewall 143b are connected to the first cover disk 141, the second cover disk 142 and the third cover disk 143 relative to the first The recovery tray 111, the second recovery tray 112, the third recovery tray 113, and the turntable 10 are operated up and down.
以下將詳細說明本發明之流體收集裝置1於不同操作狀態時之作動方式。以下,將假設第一回收盤111係收集注入添加於單晶圓W之第一流體;第二回收盤112係收集注入添加於單晶圓W之第二流體;第三回收盤113係收集注入添加於單晶圓W之第三流體,其中該第一流體係混合酸,該第二流體係稀氫氟酸,該第三流體係去離子水。並假設整個蝕刻製程係以依序對單晶圓W注入混合酸、稀氫氟酸及去離子水為一個循環。 The mode of operation of the fluid collection device 1 of the present invention in different operating states will be described in detail below. Hereinafter, it will be assumed that the first recovery tray 111 collects the first fluid added to the single wafer W; the second recovery tray 112 collects and implants the second fluid added to the single wafer W; and the third recovery tray 113 collects the injection. A third fluid is added to the single wafer W, wherein the first stream system mixes the acid, the second stream system dilute hydrofluoric acid, and the third stream system deionized water. It is also assumed that the entire etching process sequentially injects mixed acid, dilute hydrofluoric acid, and deionized water into a single wafer W in one cycle.
然而,在此須說明的是,注入添加於單晶圓W之流體的順序並不限於上述,而是可以根據使用者之需求來設定各回收盤對應收集不同之流體;並且,本發明之流體收集裝置1的回收盤之數量亦不以三個為限,而可以為一個, 或者更多個;該第一流體及該第二流體、該第三流體亦不限於使用混合酸、稀氫氟酸及去離子水,而可以根據使用者之製程需求來使用不同之流體。 However, it should be noted that the order of injecting the fluid added to the single wafer W is not limited to the above, but the respective recovery trays may be set to collect different fluids according to the needs of the user; and, the fluid of the present invention The number of collection trays of the collection device 1 is not limited to three, but may be one. Or more; the first fluid and the second fluid and the third fluid are not limited to use mixed acid, dilute hydrofluoric acid and deionized water, and different fluids can be used according to the process requirements of the user.
請參考圖4,其為流體收集裝置1於第一使用狀態之截面示意圖,其顯示單晶圓W載置時或卸除時之狀態。該第一蓋盤141、該第二蓋盤142及該第三蓋盤143的頂面位於比該轉盤10略低之位置,以便於放置或卸除單晶圓W。 Please refer to FIG. 4 , which is a schematic cross-sectional view of the fluid collection device 1 in a first use state, showing the state of the single wafer W when it is placed or removed. The top surfaces of the first cover disk 141, the second cover disk 142 and the third cover disk 143 are located slightly lower than the turntable 10 to facilitate placement or removal of the single wafer W.
請參考圖5,其為流體收集裝置1於第二使用狀態之截面示意圖。首先,一單晶圓W置於該轉盤10上;接著,第一升降單元151,151’、第二升降單元152,152’及第三升降單元153,153’將該第一蓋盤141、該第二蓋盤142及該第三蓋盤143的頂面上升超過該轉盤10;接著,該轉盤20帶動該單晶圓W旋轉;接著,一噴嘴20朝該單晶圓W上注入混合酸以作第一次蝕刻,於此時,該混合酸係因旋轉之該單晶圓W的離心力而朝外飛散,並撞擊至該第一導引頂壁141a或該第一導引側壁141b然後再流至該第一回收盤111以排出。 Please refer to FIG. 5 , which is a schematic cross-sectional view of the fluid collection device 1 in a second use state. First, a single wafer W is placed on the turntable 10; then, the first lifting unit 151, 151', the second lifting unit 152, 152', and the third lifting unit 153, 153', the first cover disk 141, the second cover disk 142 And the top surface of the third cover disk 143 rises above the turntable 10; then, the turntable 20 drives the single wafer W to rotate; then, a nozzle 20 injects mixed acid onto the single wafer W for the first etching At this time, the mixed acid is scattered outward due to the centrifugal force of the single wafer W being rotated, and impinges on the first guiding top wall 141a or the first guiding sidewall 141b and then flows to the first The tray 111 is recovered for discharge.
接著請參考圖6,其為流體收集裝置1於第三使用狀態之截面示意圖。使用該混合酸對該單晶圓W作第一次蝕刻後,再使用稀氫氟酸對該單晶圓W作第二次蝕刻。首先,第一升降單元151,151’將該第一蓋盤141的頂面下降至低於該轉盤10之位置,即前述第一使用狀態之位置;接著,該轉盤20帶動該單晶圓W旋轉;接著,一噴嘴20朝該單晶圓W上注入稀氫氟酸以作第二次蝕刻,於此時,該稀氫氟酸係因旋轉之該單晶圓W的離心力而朝外飛散,並撞擊至該第二導引頂壁142a或該第二導引側壁142b然後再流至該第二回收盤112以排出。 Please refer to FIG. 6 , which is a schematic cross-sectional view of the fluid collection device 1 in a third use state. After the single wafer W is first etched using the mixed acid, the single wafer W is etched a second time using dilute hydrofluoric acid. First, the first lifting unit 151, 151' lowers the top surface of the first cover disk 141 to a position lower than the position of the turntable 10, that is, the position of the first use state; then, the turntable 20 drives the single wafer W to rotate; Next, a nozzle 20 injects dilute hydrofluoric acid into the single wafer W for the second etching. At this time, the dilute hydrofluoric acid is scattered outward due to the centrifugal force of the single wafer W being rotated, and The second guiding top wall 142a or the second guiding side wall 142b is struck and then flows to the second recovery tray 112 for discharge.
接著請參考圖7,其為流體收集裝置1於第四使用狀態之截面示意圖。使用該稀氫氟酸對該單晶圓W作第二次蝕刻後,最後使用去離子水對該單晶 圓W作洗淨之動作。首先,第二升降單元152,152’將該第二蓋盤142的頂面下降至低於該轉盤10之位置,即前述第一使用狀態之位置;接著,該轉盤10帶動該單晶圓W旋轉;接著,一噴嘴20朝該單晶圓W上注入去離子水以洗淨,於此時,該去離子水係因旋轉之該單晶圓W的離心力而朝外飛散,並撞擊至該第三導引頂壁143a或該第三導引側壁143b然後再流至該第三回收盤113以排出。此時,即完成整個蝕刻製程。然後第三升降單元153,153’將該第三蓋盤143的頂面下降至低於該轉盤10之位置,即前述第一使用狀態之位置,再將該單晶圓W於該轉盤10上取出。 Next, please refer to FIG. 7, which is a schematic cross-sectional view of the fluid collection device 1 in a fourth use state. After the second etching of the single wafer W by using the dilute hydrofluoric acid, the single crystal is finally used using deionized water. Round W is the action of washing. First, the second lifting unit 152, 152' lowers the top surface of the second cover disk 142 to a position lower than the position of the turntable 10, that is, the position of the first use state; then, the turntable 10 drives the single wafer W to rotate; Then, a nozzle 20 injects deionized water onto the single wafer W to be washed. At this time, the deionized water is scattered outward due to the centrifugal force of the single wafer W being rotated, and impinges on the third The guiding top wall 143a or the third guiding side wall 143b then flows to the third recovery tray 113 for discharge. At this point, the entire etching process is completed. Then, the third lifting unit 153, 153' lowers the top surface of the third cover disk 143 to a position lower than the position of the turntable 10, that is, the position of the first use state, and then takes out the single wafer W on the turntable 10.
綜上所述,本發明之單晶圓旋轉蝕刻清洗機台之流體收集裝置係用於分別收集蝕刻單晶圓之不同流體,藉由固定不動的回收盤與轉盤及相對於回收盤及轉盤而可上下作動的蓋盤,來完成導引不同之流體流至對應的回收盤,並且由於回收盤係固定不動,因此連接該回收盤的回收管可選擇使用硬式管或軟式管及不需增加幫浦將收集到的流體通過回收管輸送至回收桶,以及由於回收盤與蓋盤係可分離,因此可容易地清洗該回收盤的內部。 In summary, the fluid collection device of the single-wafer rotary etching and cleaning machine of the present invention is used for separately collecting different fluids for etching a single wafer, by fixing the fixed recovery tray and the turntable and relative to the recovery tray and the turntable. A cover plate that can be actuated up and down to guide the flow of different fluids to the corresponding recovery tray, and since the recovery tray is fixed, the recovery tube connecting the recovery tray can be selected to use a hard tube or a soft tube and does not need to be added. The collected fluid is transported to the recovery tank through the recovery pipe, and since the recovery tray is separable from the cover tray, the inside of the recovery tray can be easily cleaned.
本發明在上文中已以較佳實施例揭露,然熟習本項技術者應理解的是,該實施例僅用於描繪本發明,而不應解讀為限制本發明之範圍。應注意的是,舉凡與該實施例等效之變化與置換,均應設為涵蓋於本發明之範疇內。因此,本發明之保護範圍當以申請專利範圍所界定者為準。 The invention has been described above in terms of the preferred embodiments, and it should be understood by those skilled in the art that the present invention is not intended to limit the scope of the invention. It should be noted that variations and permutations equivalent to those of the embodiments are intended to be included within the scope of the present invention. Therefore, the scope of protection of the present invention is defined by the scope of the patent application.
10‧‧‧轉盤 10‧‧‧ Turntable
111‧‧‧第一回收盤 111‧‧‧First recovery tray
112‧‧‧第二回收盤 112‧‧‧Second recovery tray
113‧‧‧第三回收盤 113‧‧‧ Third recovery tray
14‧‧‧蓋盤 14‧‧‧ Cover
141‧‧‧第一蓋盤 141‧‧‧First cover
141a‧‧‧第一導引頂壁 141a‧‧‧First guiding top wall
141b‧‧‧第一導引側壁 141b‧‧‧First guiding side wall
142‧‧‧第二蓋盤 142‧‧‧Second cover
142a‧‧‧第二導引頂壁 142a‧‧‧Second guiding top wall
142b‧‧‧第二導引側壁 142b‧‧‧Second guiding side wall
143‧‧‧第三蓋盤 143‧‧‧The third cover
143a‧‧‧第三導引頂壁 143a‧‧‧3rd guiding top wall
143b‧‧‧第三導引側壁 143b‧‧‧ third guiding sidewall
15‧‧‧升降組 15‧‧‧ Lifting group
151‧‧‧第一升降單元 151‧‧‧First lifting unit
151’‧‧‧第一升降單元 151’‧‧‧First Lifting Unit
152‧‧‧第二升降單元 152‧‧‧Second lifting unit
152’‧‧‧第二升降單元 152’‧‧‧Second lifting unit
153‧‧‧第三升降單元 153‧‧‧ third lifting unit
153’‧‧‧第三升降單元 153’‧‧‧ Third Lifting Unit
d‧‧‧距離 D‧‧‧distance
W‧‧‧單晶圓 W‧‧‧Single wafer
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