TWI600108B - Reflective deposition rings and substrate processing chambers incorporating same - Google Patents

Description

Reflective deposition ring and substrate processing chamber including reflective deposition ring

Embodiments of the invention are generally directed to semiconductor processing apparatus and techniques.

The semiconductor substrate is typically subjected to a heat treatment after material processing, such as depositing a material onto the substrate, the substrate containing features formed in its surface. The temperature uniformity across the semiconductor substrate is quite critical during the heat treatment to effectively deposit a reflow material onto the substrate during the deposition phase and provide a more uniform distribution of material within the features on the substrate. . Some reflow chambers use a reflective surface to direct radiation toward the back side of the semiconductor substrate. However, the space limitations within the reflow chamber substantially limit the area of the reflective surface, negatively affecting the temperature uniformity of the semiconductor substrate.

Accordingly, the inventors have provided an apparatus for processing a substrate that, in at least some embodiments, improves temperature uniformity across the substrate.

Provided herein for improving the temperature uniformity across a substrate Ready. In some embodiments, a deposition ring for processing a substrate in a substrate processing system can include: an annular body having a first surface, an opposite second surface, and a a central opening through the first and second surfaces, wherein the second surface is configured to be disposed on a substrate support, the substrate support having a support surface for supporting a substrate of a given width, and wherein the opening is sized to expose a major portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect thermal energy A central axis of the annular body, wherein the at least one reflective portion has a surface area that is between about 5 and about 50 percent of a total surface area of the first surface.

In some embodiments, a deposition ring for processing a substrate in a substrate processing system can include: an annular body having a first surface, an opposite second surface, and a a central opening through the first and second surfaces, wherein the second surface is configured to be disposed on a substrate support, the substrate support having a support surface for supporting a substrate of a given width, and wherein the opening is sized to expose a major portion of the support surface; and wherein the first surface includes at least one reflective portion configured to reflect thermal energy A central axis of the annular body, wherein the at least one reflective portion has a surface area that is at least 5 percent of a total surface area of the first surface.

In some embodiments, a substrate processing chamber can include: a substrate holder having a support surface for supporting a substrate having a given width; a source of radiant energy, the radiation Energy source is located a peripheral region of the substrate processing chamber; a reflector disposed about the source of radiant energy; and a deposition ring. The deposition ring can include: an annular body having a first surface, an opposite second surface, and a central opening through the first and second surfaces, wherein the second surface Is disposed to be disposed on the substrate holder, wherein the opening is sized to expose a main portion of the support surface; and at least one reflective portion, the at least one reflective portion being disposed on the first surface And the at least one reflective portion is configured to reflect thermal energy toward a central axis of the annular body, wherein the at least one reflective portion is about 5 to about 50 percent of a total surface area of the first surface.

Other embodiments and variations are discussed in more detail below.

100‧‧‧ chamber

102‧‧‧ 盖部

104‧‧‧ wall

106‧‧‧Substrate support

108‧‧‧ Entrance

112‧‧‧radiation source device

114‧‧‧Promotion

116‧‧‧Substrate receiving surface

118‧‧‧Sedimentation ring

122‧‧‧ entrance

124‧‧‧ delivery position

126‧‧‧radiation source plane

128‧‧‧ Heat treatment location

132‧‧‧Axis

134‧‧‧lower volume

136‧‧‧ upper volume

138‧‧‧ internal volume

Around 142‧‧

146‧‧‧External area

148‧‧‧ edge

150‧‧‧ protrusion

156‧‧‧ catheter

158‧‧‧conductor

160‧‧‧Processing position

162‧‧‧Actuator

166‧‧ ‧ cover ring

168‧‧‧Substrate

170‧‧‧ surface

172‧‧‧ Back side

174‧‧‧ center axis

176‧‧‧ first surface

178‧‧‧ second surface

180‧‧‧ openings

182‧‧‧radiation energy source

184‧‧‧Support

186‧‧‧Reflective surface

188‧‧‧Shell

204‧‧‧Reflection Department

206‧‧‧flat

208‧‧‧ Groove

210‧‧‧Sloping surface

402‧‧‧External diameter

404‧‧‧Internal diameter

406‧‧‧Central opening

408‧‧‧ protruding parts

Embodiments of the present invention, which are discussed in more detail below and briefly summarized above, may be understood by reference to the exemplary embodiments of the invention illustrated in the drawings. It is to be understood, however, that the appended claims

1 is a schematic cross-sectional view of a chamber, in accordance with some embodiments of the present invention.

2 is a schematic view of a deposition ring, in accordance with some embodiments of the present invention.

2A is a cross-sectional side view of a deposition ring, in accordance with some embodiments of the present invention.

According to some embodiments of the present invention, Figures 3A-C illustrate Shen A cross-sectional side view of the collar.

Figure 4 is a top view of an exemplary deposition ring, in accordance with some embodiments of the present invention.

To promote understanding, the same element symbols have been used wherever possible to refer to the same elements in the drawings. The drawings are not drawn to dimensions and may be simplified for clarity. It will be appreciated that elements and features of an embodiment may be beneficially incorporated in other embodiments without further recitation.

Embodiments of the present invention provide an improved apparatus for processing a substrate. In at least some embodiments, the device can provide improved temperature uniformity across the substrate. For example, embodiments consistent with the present invention can be used in a dual function chamber in which the normal deposition of material on the substrate is followed by heating of the same substrate. Generally, after the material is deposited on the first surface of the substrate, the first surface of the substrate is highly reflective, and therefore, heating the substrate by irradiating the reflective first surface of the substrate with a high intensity light source may be inefficient. . However, the second surface of the substrate (relative to the first surface, such as the bottom surface) may be more absorbing light energy and may provide better thermal coupling. In addition, because of space constraints, the heat source must be positioned such that movement of the pedestal is not obstructed. Therefore, the heat source must be located outside the perimeter of the base of the substrate support. In an embodiment consistent with the present invention, a combination of a reflective surface and a protective shield is provided, the combination of the reflective surface and the protective shield reflecting thermal energy from the surrounding heat source toward the substrate.

1 is a schematic cross-sectional view of a chamber 100, in accordance with some embodiments of the present invention. The chamber 100 is configured to deposit material onto the substrate On a first side of the plate and on a second side of the substrate, the second side of the substrate is opposite the first side of the substrate. Such a chamber 100 is a dual function chamber that can perform both material processing and heat treatment on the substrate without removing the substrate from the chamber. In the example of the metal deposition process, the heat treatment may be a reflow process, for example, to reduce protrusion of metal in the recess of the substrate.

The chamber 100 has a wall portion 104 and a lid portion 102 that surrounds the interior volume 138 of the chamber 100. The substrate support 106 divides the interior volume 138 into an upper volume 136 and a lower volume 134. The process gas is allowed to enter the upper volume 136 of the chamber through the inlet 108 formed in the cover portion 102, and the substrate 168 disposed on the substrate receiving surface 116 of the substrate support 106 is exposed to the process at the processing location 160 of the chamber 100. gas.

In operation, the substrate support 106 moves vertically within the chamber 100, stretching and retracting to various positions during different stages of processing. For example, the substrate support 106 can be vertically actuated to move the substrate 168 disposed on the substrate receiving surface 116 of the substrate support 106 between the processing location 160 of the chamber and the delivery location 124. The delivery location 124 defines a substrate handling device (not shown) that can manipulate the position of the substrate 168 of the substrate 168 through the inlet 122.

The plurality of lift pins 114 are disposed through the substrate receiving surface 116 of the substrate support 106. The plurality of lift pins 114 can be extended by the actuator 162 and moved independently of the substrate support 106 by a motor (not shown) coupled to the actuator 162. For example, in some embodiments, the plurality of lift pins 114 can be actuated to lift and maintain the substrate 168 near the processing location 160 while the substrate support 106 is retracted below the radiation source plane 126. In some embodiments, the substrate 168 can be positioned at a different heat treatment than the processing location 160 by actuating the lift pins At location 128, the processing location 160 may be a material processing location.

The substrate receiving surface 116 can include an electrostatic chuck that typically includes a conductor 158 disposed in the insulated substrate receiving surface 116. Conductor 158 can be a sheet metal, a wire grid, or a single path wire that is bypassed through substrate receiving surface 116. Power is typically coupled to conductor 158 by a conduit 156 that is disposed through shaft portion 132 of the substrate support. When the substrate receiving surface 116 is bonded to the substrate 168, the electrostatic chuck can be energized to secure the substrate 168 to the substrate support 106. At this point, cooling gas can also be established through conduit 156.

The substrate support 106 (with the substrate positioned thereon) moves the substrate 168 toward the processing locations 128 and 160. When the substrate holder 106 is raised toward the processing position 160, the substrate holder 106 (where the deposition ring 118 is placed over the protrusion 150) passes through the radiation source device 112. When the substrate receiving surface 116 reaches the processing location 160, the substrate 168 can be subjected to material processing, such as deposition, implantation, or etching. As described below, the deposition ring 118 can be configured to engage the cover ring 166, which can be metal or ceramic, and the cover ring 166 extends outwardly from the deposition ring 118 toward the cover portion 102. The engaged cover ring 166 can improve the function of the deposition ring 118 by controlling the flow of air from the upper volume 136 through the cover ring 166 into the lower volume 134. The deposition ring 118 engages the cover ring 166 as the substrate support 106 moves toward the processing locations 160 and 128. As the substrate support 106 moves from the processing position 160 toward the processing position 128, the cover ring 166 moves with the deposition ring 118 and the substrate support 106.

The radiation source device 112 is disposed at a perimeter 142 of the chamber 100, and the radiation source device 112 defines a radiation source plane 126 that is between the processing location 160 and the delivery location 124. The radiation source device 112 generally surrounds the substrate support 106. The radiation source device 112 includes a housing 188, a source of radiant energy 182, at least one seat 184 that protrudes from the housing 188 and supports a source of radiant energy 182, and a reflective surface 186 of the housing 188. Housing 188 is typically made of a thermally conductive material such as a metal such as stainless steel. The support 184 can be a thermally conductive material such as a metal such as stainless steel or a refractive material such as ceramic. The radiant energy source 182 can be a lamp that produces radiation having a wavelength from infrared to violet, or the radiant energy source 182 can be a microwave, millimeter wave, megahertz, submillimeter wave, or far infrared source. The radiant energy source 182 can produce radiation having a wavelength of from about 5 x 10 ^-2 m to about 1 x 10 ^-7 m. Exemplary sources of radiant energy include heat lamps, halogen lamps, arc lamps, and coaxial microwave or millimeter wave sources.

The reflective surface 186 of the housing 188 is shaped to reflect radiation from the radiant energy source 182 toward the back side 172 of the substrate 168 at the processing location 128 or 160 (eg, as a reflector). In some embodiments, the reflective surface 186 of the housing 188 is shaped to allow for substantially uniform illumination of the substrate. The reflective surface 186 of the housing 188 can have any desired shape, such as a cylindrical shape, a toroidal surface, an elliptical shape, an oval shape, or an irregular curved shape. In addition to or instead of being curved, the reflective surface 186 of the housing 188 can be a small plane. In some embodiments, the reflective surface 186 of the housing 188 can be a combined portion of a plurality of cylinders having the same or different radii of curvature, each of the cylinders being tapered or partially Small plane. In some embodiments, the reflective surface 186 of the housing 188 is semi-pericyclic. In some embodiments, the reflective surface 186 of the housing 188 includes a plurality of reflective members, each of which can be substantially flat, curved, independently of one another. A tapered or small plane at the end, the reflectors being positioned to approximate a curved surface. The support 184 is generally non-continuous, such as a support pin, rod, or tab, such that radiation from the radiant energy source 182 reaches substantially the entire reflective surface 186 of the housing 188 and is reflected toward the back side 172 of the substrate 168.

A deposition ring 118 is disposed around the edge 148 of the substrate receiving surface 116. The deposition ring 118 can be a metal or metal coated ceramic such as stainless steel, alumina, or the like. Typically, the deposition ring 118 is formed from a material that is resistant to high temperatures. Additionally, as described below, the first surface 176 of the deposition ring 118 is reflective.

The deposition ring 118 substantially covers the outer region 146 of the substrate support 106 to prevent deposition on the outer region 146. The deposition ring includes an annular body having a first surface 176 and an opposite second surface 178. The second surface 178 is placed, for example, on the protrusion 150 formed in the outer region 146 of the substrate receiving surface 116. In certain embodiments, the deposition ring has a diameter of from about 12 吋 to about 15 吋. The deposition ring also includes an opening 180 that is disposed through the center of the deposition ring 118. The opening 180 disposed through the center of the deposition ring 118 is sized to expose a major portion of the substrate receiving surface 116. In some embodiments, the substrate 168 disposed on the substrate receiving surface 116 is in contact with the deposition ring 118. In an alternate embodiment, the substrate 168 can have an outer radius that is less than the inner radius of the deposition ring 118 such that the substrate 168 does not contact the deposition ring 118.

After the processing at processing location 160 is complete, substrate holder 106 can be positioned to perform a backside heat treatment of substrate 168. By interrupting the power to the conductor 158 (or in the embodiment of the vacuum chuck, it is interrupted to the substrate) Receiving the vacuum of the surface), any clamping force of the substrate 168 can be released, then the substrate support 106 is retracted and the lift pins 114 are actuated into the extended position. This disengages the substrate 168 from the substrate receiving surface 116 and maintains the substrate 168 at the processing location 160 when the substrate holder 106 is retracted to a heat treated position below the radiation source plane 126. The back side of the substrate is thereby exposed to radiation from the radiation source device 112. Substrate 168 can be moved to a heat treatment location 128 that is different from processing location 160 by actuating the lift pins, if desired. In such an embodiment, the processing location 160 can be a material processing location. According to the energy exposure requirements of certain embodiments, as desired, the heat treatment location can be above or below the material processing location. The substrate 168 is illustrated in the first embodiment in the heat treatment position.

During the heat treatment, the radiation source device 112 is powered up and energy is emitted from the radiation source device 112 toward the back side of the substrate 168. The back side 172 of the substrate 168 is the substrate surface opposite the surface 170 on which the material processing is performed. In addition to providing an integrated material and heat treatment chamber, illuminating the back side 172 of the substrate 168 in this manner can improve the energy efficiency of the heat treatment by illuminating the less reflective surface of the substrate 168. In some embodiments, material processing performed on substrate 168 can form a reflective layer or partial layer on surface 170 that reduces energy absorption. Irradiation of the back side 172 avoids increased reflectivity. Additionally, the reflectivity of surface 170 can reflect radiation from radiation source device 112, and radiation from radiation source device 112 travels through substrate 168 and back through substrate 168 to further improve efficiency.

As described above, the deposition ring 118 includes a first surface 176 that is configured to increase the amount of radiation that is reflected from the radiant energy source 182 toward the substrate at the processing location 160 (eg, at least portions of the first surface) Is configured to reflect radiation radially inward toward the central axis 174 of the processing chamber). In certain embodiments, the deposition ring 118 can be configured as an extension of the reflective surface 186 of the radiation source device 112.

In some embodiments, the first surface 176 is textured to enhance adhesion of material deposited on the first surface 176, thereby reducing deposition that is grown on the first surface 176 of the deposition ring 118 during substrate processing. Any peeling of the material. In certain embodiments, the first surface 176 has a roughness of from about 80 to about 100 micro 吋 RMS.

2 illustrates a cross-sectional side view of an exemplary deposition ring 118, in accordance with some embodiments of the present invention. 2A is a detailed cross-sectional side view of the deposition ring 118 of FIG. 2. 3A-C illustrate various non-limiting, exemplary embodiments of the first surface 176 of the deposition ring.

In some embodiments, as depicted in Figures 2-2A and 3A-C, the first surface 176 of the deposition ring 118 includes at least one reflective portion 204 that is configured to reflect light energy toward The central axis of the deposition ring (eg, the deposition ring is also a reflector). For example, as depicted in Figures 2A and 3A-B, the first surface 176 of the deposition ring 118 can include a reflective portion 204. The first surface 176 of the deposition ring 118 can also include more than one reflective portion 204, as depicted in Figure 3C. Although the entire first surface 176 of the deposition ring 118 can be reflective, the term "reflecting surface" or "reflecting surface" is used to describe the configuration to reflect light energy toward deposition when used herein in connection with a deposition ring. The surface of the central axis of the ring.

In some embodiments, the reflective portion 204 includes a major portion of the first surface 176. In some embodiments, the reflective portion 204 is the first surface 176 About 5 to about 50 percent. The reflecting portion 204 is disposed to reflect thermal energy toward the central axis 174 of the annular body. In some embodiments, the angle of the reflective portion relative to the central axis of the annular body is an angle of from about 0 degrees to about 30 degrees, or up to about 30 degrees. The first surface 176 including at least one reflective portion 204 and configured to reflect thermal energy toward the central axis 174 of the annular body advantageously increases the amount of radiation directed toward the back side 172 of the substrate, thereby improving (eg, reducing) the substrate Temperature non-uniformity. Additionally, the inventors have discovered that at least one reflective portion 204 can advantageously be incorporated into the deposition ring along a portion of the first surface 176 (eg, having a surface area that is about 5 percent of the total surface area of the first surface 176 to About 50 percent) to advantageously improve (eg, reduce) temperature non-uniformity of the substrate while maintaining the function of the deposition ring. The increase in the amount of radiation directed toward the back side 172 of the substrate can advantageously be performed within the space constraints of the reflow chamber.

In some embodiments, the reflective portion 204 of the deposition ring 118 is first coated with a reflective material prior to placing the deposition ring 118 into the chamber. In some embodiments, the deposition ring 118 is coated with a reflective material within the chamber 100. The reflective portion 204 can be coated with a reflective material such as copper, gold, aluminum, or the like.

The manner in which the reflective portion 204 of the deposition ring 118 is curved and/or faceted is compatible with the curvature and/or facet of the reflective surface 186 of the housing 188 such that the reflective surface 186 of the housing 188 and the reflective ring 118 are reflected. The portions 204 together form a composite reflector that is configured to direct as much radiation as possible from the radiant energy source 182 to the back side of the substrate above the radiant energy source 182 as much as possible.

In certain embodiments, the first surface 176 includes an angled surface 210. In FIGS. 2A and 3A-B, the reflection portion 204 is provided in the vicinity of the inclined surface 210. The inclined surface advantageously acts to facilitate containment of the deposited material, and/or when the substrate 168 is lowered into the central opening of the deposition ring 118, the inclined surface advantageously acts to guide the substrate 168 into the proper position. In some embodiments, the inclined surface 210 can also be a reflective portion (eg, a second reflective portion), similar to the reflective portion 204.

In some embodiments, as depicted in Figures 2A and 3A-B, the first surface 176 includes a flat portion 206 disposed adjacent the outer periphery of the deposition ring 118 to engage the cover ring 166, the cover The ring 166 can be metal or ceramic and the cover ring 166 extends outwardly from the deposition ring 118 toward the cover portion 102. By controlling the flow of air from the upper volume 136 through the cover ring 166 into the lower volume 134, the cover ring 166 and the flat portion 206 can improve the function of the deposition ring 118. The deposition ring 118 engages the cover ring 166 as the substrate support 106 moves toward the processing locations 160 and 128. As the substrate support 106 moves from the processing position 160 toward the processing position 128, the cover ring 166 moves with the deposition ring 118 and the substrate support 106.

In certain embodiments, as depicted in Figures 2A and 3A-B, the first surface 176 includes a recess 208. In some embodiments, the groove 208 can be disposed radially inward of the flat portion 206. The grooves 208 advantageously provide a storage tank for the growth of the deposited material during substrate processing. In some embodiments, the angled surface 210 can be disposed adjacent or beside the groove 208. For example, in some embodiments, the inclined surface 210 can form one wall of the recess 208.

4 is a top view of an exemplary deposition ring 118, in accordance with some embodiments of the present invention. The deposition ring 118 includes an outer diameter 402, an inner diameter 404, and a central opening 406. In some embodiments, the deposition ring 118 can include one or more Protrusions 408, which may help position the deposition ring 118.

Referring back to FIG. 1, after the heat treatment is completed, the substrate is typically re-bonded to the substrate receiving surface 116 by retracting the lift pins 114. The clamping force can be applied again, and the cooling gas is again established to cool the substrate. If desired, the substrate holder 106 can then be moved to the appropriate position for further processing, or returned to the delivery position for substrate retrieval. When the substrate holder 106 is at the transport position, the substrate is accessed by extending the lift pins 114 so that the robot blade can be interposed between the substrate and the substrate receiving surface 116.

For materials (ie, deposition or implantation) and heat treatment, the substrates need not be positioned at the same location. In the foregoing, it is suggested that the processing position 160 is the same during the material and heat treatment, but need not necessarily be the case. For example, the heat treatment location can be different than the material processing location. The substrate can be raised or lowered from the material processing location to the heat treatment location. The location of the heat treatment location relative to the material processing location typically depends on the design of the radiation source and the needs of the material processing.

Accordingly, improved apparatus for improving temperature uniformity across a substrate has been disclosed herein. The apparatus of the present invention can advantageously facilitate a reflow stage such that material deposited on the sidewalls of the feature can be moved to the bottom of the feature, thereby reducing the aspect ratio of the structure.

While the foregoing is a description of the embodiments of the present invention, further and further embodiments of the invention may be

176‧‧‧ first surface

204‧‧‧Reflection Department

206‧‧‧flat

208‧‧‧ Groove

210‧‧‧Sloping surface

Claims (17)

A deposition ring for use in a substrate processing system for processing a substrate, the deposition ring comprising: an annular body having a first surface, a second opposing surface, a recess, and a central opening through the first and second surfaces, wherein the second surface is configured to be disposed on a substrate support, the substrate support having a support surface for supporting a substrate of a given width, and wherein the central opening is sized to expose a major portion of the support surface; wherein the first surface includes at least one reflective portion configured to reflect thermal energy a central axis facing the annular body, wherein the at least one reflective portion has a surface area that is about 5 to about 50 percent of a total surface area of the first surface; and wherein the recess is disposed in the first In a surface, and the groove is configured to receive a growth of deposited material during substrate processing. The deposition ring of claim 1, wherein the at least one reflective portion is coated with a reflective material. The deposition ring of claim 1, wherein the annular body further comprises: a flat portion disposed adjacent an outer periphery of the deposition ring to support a cover ring; and an inclined surface, the inclined surface Provided on the first surface and adjacent to the groove, wherein the inclined surface is configured to have the base when the substrate is present The plate is positioned above the central opening. The deposition ring of any of claims 1 to 3, wherein the first surface has a roughness of from about 80 micro Torr to about 100 micro 吋 RMS. The deposition ring of any of claims 1-3, wherein the deposition ring has a diameter of from about 12 吋 to about 15 吋. The deposition ring of any one of claims 1 to 3, wherein an inclination of the at least one reflection portion is from about 0 degrees to about 30 degrees. The deposition ring of any of claims 1 to 3, wherein the annular body comprises a plurality of reflective portions, each reflective portion having an angle to reflect thermal energy toward the substrate when the substrate is present. The deposition ring of any of claims 1 to 3, wherein the annular body further comprises a first step connecting the second surface to an inner diameter of the annular body. The deposition ring of any of claims 1-3, wherein the at least one reflective portion is a major portion of the first surface. A deposition ring for use in a substrate processing system for processing a substrate, the deposition ring comprising: An annular body having a first surface, an opposite second surface, a recess, and a central opening through the first and second surfaces, wherein the second surface is configured Arranging on a substrate support, the substrate support has a support surface for supporting a substrate having a given width, and wherein the central opening is sized to expose the support surface a main portion; wherein the first surface includes at least one reflective portion configured to reflect thermal energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is the first surface At least 5 percent of a total surface area; and wherein the recess is recessed into the first surface of the annular body and the recess extends toward the second surface, wherein the recess is configured to be processed during substrate processing Receive the growth of deposited material. The deposition ring of claim 10, further comprising: an inclined surface disposed on the first surface adjacent to the groove, wherein the inclined surface is configured to present the substrate when the substrate is present Located above the central opening. The deposition ring of any one of claims 10-11, further comprising: a flat portion disposed adjacent an outer periphery of the first surface of the deposition ring to support a cover ring. A substrate processing chamber comprising: a substrate holder having a support surface for supporting a substrate having a given width; a source of radiant energy, the radiant energy source being located at a peripheral region of the substrate processing chamber; a reflector disposed around the radiant energy source; and a deposition ring, the deposition ring including: an annular body having a first surface, a second opposing surface, and a central opening The central opening passes through the first and second surfaces, wherein the second surface is configured to be disposed over the substrate support, and wherein the central opening is sized to expose a major portion of the support surface And the first surface includes at least one reflective portion configured to reflect thermal energy toward a central axis of the annular body, wherein the at least one reflective portion has a surface area that is one of the first surfaces At least 5 percent of the total surface area. The substrate processing chamber of claim 13, wherein the annular body of the deposition ring further comprises: a flat portion disposed adjacent an outer periphery of the deposition ring to support a cover ring; a groove a recess disposed in the first surface, the recess being configured to receive a growth of the deposited material during processing of the substrate; and an inclined surface disposed on the first surface adjacent to the a groove, wherein the inclined surface is configured to have the base when the substrate is present The plate is positioned above the central opening. The substrate processing chamber of any of claims 13-14, wherein the at least one reflective portion of the deposition ring is coated with a reflective material. The substrate processing chamber of any of claims 13-14, the deposition ring further comprising a first surface having a roughness of from about 80 micro Torr to about 100 micro 吋 RMS. The substrate processing chamber of any of claims 13-14, wherein the first surface of the deposition ring is an extension of the reflector.