TWI599017B - 晶圓等級之發光二極體陣列及其製造方法 - Google Patents
晶圓等級之發光二極體陣列及其製造方法 Download PDFInfo
- Publication number
- TWI599017B TWI599017B TW102128317A TW102128317A TWI599017B TW I599017 B TWI599017 B TW I599017B TW 102128317 A TW102128317 A TW 102128317A TW 102128317 A TW102128317 A TW 102128317A TW I599017 B TWI599017 B TW I599017B
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- emitting diode
- semiconductor layer
- interlayer insulating
- layer
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 40
- 239000010410 layer Substances 0.000 claims description 311
- 239000004065 semiconductor Substances 0.000 claims description 149
- 239000011229 interlayer Substances 0.000 claims description 82
- 239000000758 substrate Substances 0.000 claims description 50
- 239000004020 conductor Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052703 rhodium Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 2
- 210000004027 cell Anatomy 0.000 description 106
- 230000008569 process Effects 0.000 description 19
- 230000015572 biosynthetic process Effects 0.000 description 14
- 238000005530 etching Methods 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 12
- 230000004888 barrier function Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000009413 insulation Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910008599 TiW Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 210000004508 polar body Anatomy 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20120086329 | 2012-08-07 | ||
| KR20120094107 | 2012-08-28 | ||
| KR1020130088710A KR101949505B1 (ko) | 2012-08-28 | 2013-07-26 | 웨이퍼 레벨의 발광 다이오드 어레이 및 그의 제조방법 |
| KR1020130088709A KR101892213B1 (ko) | 2012-08-07 | 2013-07-26 | 웨이퍼 레벨의 발광 다이오드 어레이 및 그의 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201413915A TW201413915A (zh) | 2014-04-01 |
| TWI599017B true TWI599017B (zh) | 2017-09-11 |
Family
ID=54393891
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW102128317A TWI599017B (zh) | 2012-08-07 | 2013-08-07 | 晶圓等級之發光二極體陣列及其製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE202013012471U1 (fr) |
| IN (1) | IN2015KN00390A (fr) |
| TW (1) | TWI599017B (fr) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI591849B (zh) | 2015-11-27 | 2017-07-11 | 隆達電子股份有限公司 | 半導體發光結構及其半導體封裝結構 |
| CN111933654A (zh) * | 2020-08-19 | 2020-11-13 | 惠科股份有限公司 | 显示装置与其制造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6573537B1 (en) | 1999-12-22 | 2003-06-03 | Lumileds Lighting, U.S., Llc | Highly reflective ohmic contacts to III-nitride flip-chip LEDs |
| KR101158071B1 (ko) | 2005-09-28 | 2012-06-22 | 서울옵토디바이스주식회사 | 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 |
| KR101115535B1 (ko) | 2006-06-30 | 2012-03-08 | 서울옵토디바이스주식회사 | 확장된 금속 반사층을 갖는 플립 본딩형 발광다이오드 및그 제조방법 |
-
2013
- 2013-08-06 DE DE202013012471.7U patent/DE202013012471U1/de not_active Expired - Lifetime
- 2013-08-06 IN IN390KON2015 patent/IN2015KN00390A/en unknown
- 2013-08-07 TW TW102128317A patent/TWI599017B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| IN2015KN00390A (fr) | 2015-07-10 |
| TW201413915A (zh) | 2014-04-01 |
| DE202013012471U1 (de) | 2017-02-17 |
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