TWI597560B - Method of manufacturing a photomask, photomask and method of manufacturing a flat panel display - Google Patents
Method of manufacturing a photomask, photomask and method of manufacturing a flat panel display Download PDFInfo
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- TWI597560B TWI597560B TW105101916A TW105101916A TWI597560B TW I597560 B TWI597560 B TW I597560B TW 105101916 A TW105101916 A TW 105101916A TW 105101916 A TW105101916 A TW 105101916A TW I597560 B TWI597560 B TW I597560B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
本發明係關於一種用以將圖案轉印至被轉印體之光罩之製造方法、光罩及使用有該光罩之平面顯示器之製造方法。 The present invention relates to a method of manufacturing a photomask for transferring a pattern to a transfer target, a photomask, and a method of manufacturing a flat panel display using the same.
近年來，期望液晶面板等平面顯示器之配線圖案之微細化。繼而，期望此種微細化之理由在於：不僅會提高圖像品質例如提高平面顯示器之亮度，提高反應速度，而且自節能之觀點考慮，亦存在有利之方面。隨之，對於用以製造平面顯示器之光罩而言，對於微細圖案之線寬精度之要求亦提高。 In recent years, it has been desired to refine the wiring pattern of a flat panel display such as a liquid crystal panel. Then, the reason for such miniaturization is expected to be that not only the image quality is improved, for example, the brightness of the flat panel display is increased, the reaction speed is increased, and there is also an advantageous aspect from the viewpoint of energy saving. Accordingly, for the reticle used to manufacture the flat display, the requirement for the line width precision of the fine pattern is also improved.
作為先前技術，例如於下述專利文獻1中揭示有如下相位偏移遮罩，該相位偏移遮罩係使遮光膜圖案化，且以包覆遮光膜之方式，形成相對於i射線具有180°之相位差之膜厚之相位偏移層而成，藉此，能夠形成微細且精度高之圖案。專利文獻1所揭示之相位偏移遮罩之製造方法係使透明基板上之遮光層圖案化，以包覆該遮光層之方式而於透明基板上形成相位偏移層，且使該相位偏移層圖案化者。已揭示了藉由相位之反轉作用而形成光強度最小之區域，從而可使曝光圖案更鮮明。 As a prior art, for example, Patent Document 1 listed below discloses a phase shift mask which patterns a light shielding film and forms 180 with respect to an i-ray in such a manner as to cover the light shielding film. The phase shift layer of the film thickness of the phase difference of ° is formed, whereby a fine and highly accurate pattern can be formed. The method for manufacturing a phase shift mask disclosed in Patent Document 1 is to pattern a light shielding layer on a transparent substrate, to form a phase shift layer on the transparent substrate by coating the light shielding layer, and to shift the phase Layer patterner. It has been revealed that the region where the light intensity is the smallest is formed by the reversal of the phase, so that the exposure pattern can be made more vivid.
又，下述專利文獻2中揭示有如下光罩及其製造方法，該光罩之 特徵在於：其係具備使透明基板上之下層膜及上層膜分別圖案化而形成之包含透光部、遮光部、半透光部之轉印用圖案的光罩，上述透光部係由上述透明基板露出而成，上述遮光部係於上述透明基板上，使上層膜積層地形成於上述下層膜上而成，上述半透光部係上述下層膜形成於上述透明基板上而成，且具有與上述遮光部之邊緣相鄰接地形成之1.0μm以下之固定線寬的部分。藉此，可提供具備微細且精度高之轉印用圖案之光罩。 Further, Patent Document 2 listed below discloses a photomask and a method of manufacturing the same, the mask A light-shielding comprising a transfer pattern including a light-transmitting portion, a light-shielding portion, and a semi-transmissive portion formed by patterning a lower layer film and an upper layer film on a transparent substrate, wherein the light-transmitting portion is The transparent substrate is exposed, the light shielding portion is formed on the transparent substrate, and an upper layer film is formed on the lower layer film, and the semi-transmissive portion is formed by forming the lower layer film on the transparent substrate. A portion of the fixed line width of 1.0 μm or less which is formed adjacent to the edge of the light shielding portion. Thereby, it is possible to provide a photomask having a fine and highly precise transfer pattern.
[專利文獻1]日本專利特開2011-13283號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2011-13283
[專利文獻2]日本專利特開2013-134435號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2013-134435
然而，難以藉由單純地使光罩之轉印用圖案微細化而使平面顯示器之配線圖案微細化。 However, it is difficult to make the wiring pattern of the flat display finer by simply making the pattern for transfer of the photomask fine.
根據上述專利文獻1所揭示之相位偏移遮罩，遮光層形成於透明基板上，相位偏移層形成於該遮光層之周圍，能夠相對於300nm以上且500nm以下之複合波長區域中之任一種光而具有180°之相位差。可利用此種相位偏移層獲得相位偏移效果，另一方面，實際上不易獲得此種相位偏移遮罩。根據專利文獻1之相位偏移遮罩之製造方法，遮光層與相位偏移層之相對位置關係會受到兩次描繪之相互之對準偏差的影響。因此，會產生如下缺陷，即，形成於遮光層周圍之相位偏移層之寬度不固定，相位偏移效果產生不均。 According to the phase shift mask disclosed in Patent Document 1, the light shielding layer is formed on the transparent substrate, and the phase shift layer is formed around the light shielding layer, and is capable of being formed in any one of composite wavelength regions of 300 nm or more and 500 nm or less. Light has a phase difference of 180°. Such a phase shifting layer can be used to obtain a phase shifting effect, and on the other hand, such a phase shifting mask is not easily obtained. According to the manufacturing method of the phase shift mask of Patent Document 1, the relative positional relationship between the light shielding layer and the phase shift layer is affected by the misalignment of the two depictions. Therefore, there is a drawback that the width of the phase shift layer formed around the light shielding layer is not fixed, and the phase shift effect is uneven.
另一方面，對於上述專利文獻2所揭示之光罩而言，於其製造方法中藉由一次描繪而形成之抗蝕圖案決定上層膜與下層膜之圖案化之位置。因此，存在如下優點：可穩定且正確地形成窄寬度(1.0μm以 下)之固定寬度部分(以下亦稱為「緣邊部」)。根據本發明者之研究，於實施兩次描繪步驟之情形時，有時會產生0.1μm~0.5μm左右之相互之對準偏差，難以完全阻止該相互之對準偏差。因此，根據專利文獻2所揭示之光罩，無法正確地形成尺寸小之圖案之先前之缺陷得以解決。 On the other hand, in the photomask disclosed in Patent Document 2, the resist pattern formed by one drawing in the manufacturing method determines the position of patterning of the upper film and the lower film. Therefore, there is an advantage that a narrow width (1.0 μm can be stably and correctly formed) The fixed width portion of the lower part (hereinafter also referred to as the "edge portion"). According to the study of the present inventors, when the drawing step is performed twice, the mutual misalignment of about 0.1 μm to 0.5 μm sometimes occurs, and it is difficult to completely prevent the mutual misalignment. Therefore, according to the reticle disclosed in Patent Document 2, the previous drawback of the inability to correctly form a small-sized pattern can be solved.
然而，根據專利文獻2之光罩之製造方法，重要的是下層膜與上層膜之蝕刻特性不同，即，相對於一方之膜之蝕刻劑，另一方之膜具有耐受性。於該情形時存在如下問題：雖可穩定地形成緣邊部，但於下層膜與上層膜具有共通之蝕刻特性之情形時，難以形成緣邊部。 However, according to the method of manufacturing a photomask of Patent Document 2, it is important that the etching property of the underlayer film and the overlayer film is different, that is, the film of the other film is resistant to the etchant of one of the films. In this case, there is a problem that although the rim portion can be stably formed, it is difficult to form the rim portion when the underlayer film and the upper layer film have common etching characteristics.
此處，參照表示上述專利文獻2之光罩之製造方法之圖8，對上述問題進行說明。本申請案之圖8轉記了專利文獻2之圖3。 Here, the above problem will be described with reference to Fig. 8 showing a method of manufacturing the photomask of Patent Document 2. Figure 8 of the present application reproduces Figure 3 of Patent Document 2.
假定圖8(D)所示之下層膜20p與上層膜30a具有共通之蝕刻特性。於該情形下，通常當於圖8(E)之上層膜圖案化步驟中，欲對上層膜30a進行側蝕而形成緣邊部時，會導致下層膜20p與上層膜30a同時受到蝕刻而溶出。其結果，可設想無法形成如圖8(F)所示之由下層膜20p露出而成之寬度窄的緣邊部。即，認為當欲採用專利文獻2之方法時，需要於下層膜與上層膜中採用蝕刻特性彼此不同之材料。本發明者已著眼於該方面。 It is assumed that the underlayer film 20p and the upper layer film 30a shown in Fig. 8(D) have a common etching property. In this case, generally, in the layer film patterning step in FIG. 8(E), when the edge film portion is to be etched by the side layer film 30a, the lower layer film 20p and the upper layer film 30a are simultaneously etched and eluted. . As a result, it is conceivable that the rim portion having a narrow width exposed by the underlayer film 20p as shown in Fig. 8(F) cannot be formed. In other words, it is considered that when the method of Patent Document 2 is to be used, it is necessary to use materials having different etching characteristics from each other in the lower film and the upper film. The inventors have focused on this aspect.
另一方面，於使用蝕刻特性共通之下層膜與上層膜，使該兩個膜分別圖案化而形成轉印用圖案之情形時，可考慮使蝕刻終止膜介於該兩個膜之間。該蝕刻終止膜使用具有與下層膜及上層膜不同之蝕刻特性之材料，且對於下層膜及上層膜之蝕刻劑具有耐受性。只要使此種蝕刻終止膜介於下層膜與上層膜之間，且利用分別適合於下層膜與上層膜之蝕刻劑，依序對該下層膜與上層膜進行蝕刻，則能夠對下層膜與上層膜分別形成所期望之圖案。 On the other hand, when the film and the upper film are collectively used under the etching characteristics, and the two films are respectively patterned to form a transfer pattern, it is conceivable that the etching stopper film is interposed between the two films. The etching stopper film uses a material having an etching property different from that of the underlayer film and the upper layer film, and is resistant to the underlying film and the etchant of the upper layer film. As long as such an etch stop film is interposed between the underlayer film and the upper layer film, and the underlayer film and the upper layer film are sequentially etched by using an etchant suitable for the underlayer film and the upper layer film, respectively, the underlayer film and the upper layer can be applied The films respectively form the desired pattern.
因此，考慮準備如下光罩基底，應用上述專利文獻2所揭示之方 法而進行無對準偏差之圖案化，該光罩基底係於透明基板上依序積層下層膜、蝕刻終止膜及上層膜，且於其表面形成光阻膜而成。本申請案之圖9係表示該步驟之參考圖。 Therefore, it is considered to prepare a mask base as follows, and the method disclosed in the above Patent Document 2 is applied. In the method of patterning the misalignment deviation, the mask base is formed by sequentially laminating a lower layer film, an etching stopper film, and an upper layer film on the transparent substrate, and forming a photoresist film on the surface thereof. Figure 9 of the present application is a reference diagram showing this step.
首先，準備如圖9(a)所示之於透明基板1上依序積層下層膜2、蝕刻終止膜3及上層膜4而成之光罩基底。 First, a mask base formed by sequentially laminating the lower layer film 2, the etching stopper film 3, and the upper layer film 4 on the transparent substrate 1 as shown in Fig. 9(a) is prepared.
該光罩基底於透明基板1上形成有半透光膜作為下層膜2，於該半透光膜上形成有蝕刻終止膜3，進而形成有遮光膜作為上層膜4。於最上層塗佈形成有正型之光阻膜5。此處，半透光膜係使得用於光罩曝光之曝光之光的一部分透過之膜，遮光膜實質上遮光。又，例如若將半透光膜與遮光膜均設為包含Cr之材料，則能夠藉由Cr用之蝕刻劑(由於此處採用濕式蝕刻，故而該蝕刻劑為蝕刻液)進行蝕刻。另一方面，蝕刻終止膜包含對於Cr用蝕刻劑具有耐受性之材料，此處包容如下材料，該材料包含矽化鉬。 The reticle base is formed with a semi-transmissive film as the underlayer film 2 on the transparent substrate 1, and an etch stop film 3 is formed on the semi-transmissive film, and a light-shielding film is formed as the upper layer film 4. A positive resist film 5 is formed on the uppermost layer. Here, the semi-transmissive film is a film in which a part of the light for exposure of the reticle is transmitted, and the light-shielding film is substantially shielded from light. Further, for example, when both the semi-transmissive film and the light-shielding film are made of a material containing Cr, etching can be performed by an etchant for Cr (the etching agent is an etching solution because wet etching is used here). On the other hand, the etch stop film contains a material which is resistant to an etchant for Cr, and contains a material containing molybdenum telluride.
其次，使用雷射描繪裝置而對上述光罩基底進行描繪、顯影，藉此形成抗蝕圖案5a(參照圖9(b))。 Next, the mask base is drawn and developed using a laser drawing device to form a resist pattern 5a (see FIG. 9(b)).
其次，將該形成之抗蝕圖案5a作為遮罩，對上層膜4進行蝕刻而形成上層膜圖案4a(參照圖9(c))。此處，使用含有硝酸鈰銨之蝕刻液作為Cr用蝕刻液。 Next, the formed resist pattern 5a is used as a mask, and the upper layer film 4 is etched to form an upper layer film pattern 4a (see FIG. 9(c)). Here, an etching solution containing cerium ammonium nitrate is used as an etching liquid for Cr.
其次，將蝕刻液改換為氫氟酸系之蝕刻液，對蝕刻終止膜3進行蝕刻從而形成蝕刻終止膜圖案3a(參照圖9(d))。 Next, the etching liquid is changed to a hydrofluoric acid-based etching liquid, and the etching stopper film 3 is etched to form an etching stopper film pattern 3a (see FIG. 9(d)).
再次，使用Cr用之蝕刻液，對下層膜2進行蝕刻(參照圖9(e))。透明基板1之一部分露出而形成透光部。 Again, the underlayer film 2 is etched using an etching solution for Cr (see FIG. 9(e)). A portion of the transparent substrate 1 is exposed to form a light transmitting portion.
其次，與專利文獻2之(E)步驟(參照本申請案之圖8(E))同樣地，為了形成緣邊部，進而利用Cr用蝕刻液進行追加蝕刻。此時，上述抗蝕圖案5a成為遮罩，對上層膜4a進行側蝕(參照圖9(f))。其中，同樣亦對與上層膜4a相同之Cr系之下層膜2a進行側蝕。 Then, similarly to the step (E) of Patent Document 2 (refer to FIG. 8(E) of the present application), in order to form the rim portion, additional etching is further performed using an etching solution for Cr. At this time, the resist pattern 5a serves as a mask, and the upper layer film 4a is subjected to side etching (see FIG. 9(f)). Among them, the Cr-based underlayer film 2a which is the same as the upper film 4a is also subjected to side etching.
進而，進而繼續進行追加蝕刻，進行側蝕(參照圖9(g))。 Further, additional etching is continued to perform side etching (see FIG. 9(g)).
其後，剝離除去抗蝕圖案5a(參照圖9(h))。 Thereafter, the resist pattern 5a is peeled off (see FIG. 9(h)).
最後，蝕刻除去蝕刻終止膜3a之後，如圖9(i)所示，與圖8(F)所示之下層膜20p不同，未形成僅由下層膜2c露出而成之緣邊部。 Finally, after the etching stopper film 3a is removed by etching, as shown in FIG. 9(i), unlike the underlying film 20p shown in FIG. 8(F), the edge portion exposed only by the underlayer film 2c is not formed.
因此，可設想於下層膜與上層膜之蝕刻特性共通之情形時，無法應用專利文獻2之製法，利用一次描繪而使兩個膜分別圖案化為不同之尺寸。再者，根據使一個膜圖案化後，使另一個膜成膜且圖案化之方法(專利文獻1之方法)，雖能夠與膜素材無關地使各個膜圖案化，但由於會因兩次描繪而產生對準偏差，故而無法形成具有微細寬度之圖案。 Therefore, when the etching characteristics of the underlayer film and the upper layer film are common, it is conceivable that the method of Patent Document 2 cannot be applied, and the two films are respectively patterned into different sizes by one drawing. In addition, according to the method of patterning one film and then patterning and patterning another film (method of Patent Document 1), each film can be patterned regardless of the film material, but it is caused by two paintings. However, alignment deviation occurs, so that a pattern having a fine width cannot be formed.
因此，本發明之目的在於提供即使於下層膜與上層膜之蝕刻特性共通之情形時，亦能夠穩定且正確地形成寬度窄的緣邊部之方法，藉此，提供具備微細且高精度之轉印用圖案之光罩、該光罩之製造方法及平面顯示器之製造方法。 Therefore, an object of the present invention is to provide a method for stably and accurately forming a rim portion having a narrow width even when the etching properties of the underlayer film and the upper film are common to each other, thereby providing a fine and highly precise rotation. A mask for printing a pattern, a method of manufacturing the mask, and a method of manufacturing a flat panel display.
本發明者為了解決上述問題，著眼於下層膜與上層膜之側蝕特性而進行了仔細研究，結果發現可藉由具有以下構成之發明而解決上述問題，從而完成了本發明。 In order to solve the above problems, the inventors of the present invention have conducted intensive studies focusing on the undercut characteristics of the underlayer film and the overlayer film, and as a result, have found that the above problems can be solved by the invention having the following constitution, and have completed the present invention.
即，本發明具有以下構成。 That is, the present invention has the following constitution.
(構成1) (Composition 1)
一種光罩之製造方法，其特徵在於：其係具備轉印用圖案之光罩之製造方法，上述轉印用圖案係藉由使形成於透明基板上之下層膜、蝕刻終止膜及上層膜分別圖案化而形成，上述光罩之製造方法包括：準備光罩基底之步驟，上述光罩基底係由上述下層膜、上述蝕刻終止膜及上述上層膜依序積層於上述透明基板上而成；上層膜預蝕刻步驟，其將形成於上述上層膜上之抗蝕圖案作為遮罩而對上述上層膜 進行蝕刻；至少將經蝕刻之上述上層膜作為遮罩而對上述蝕刻終止膜進行蝕刻之步驟；下層膜蝕刻步驟，其至少將經蝕刻之上述蝕刻終止膜作為遮罩而對上述下層膜進行蝕刻；以及上層膜側蝕步驟，其至少將上述抗蝕圖案作為遮罩而對上述上層膜進行側蝕，藉此，形成藉由使上述上層膜之邊緣較上述下層膜之邊緣後退特定寬度而成之緣邊部，上述下層膜包含可藉由上述上層膜之蝕刻劑蝕刻之材料，上述蝕刻終止膜包含對於上述上層膜之蝕刻劑具有耐受性之材料。 A method for producing a photomask, comprising: a method for producing a photomask having a transfer pattern, wherein the transfer pattern is formed by a lower layer film, an etching stopper film, and an upper film formed on a transparent substrate Forming the mask, the method for manufacturing the mask includes the step of preparing a mask base, wherein the mask layer is formed by sequentially laminating the underlayer film, the etching stopper film, and the upper film on the transparent substrate; a film pre-etching step of the resist pattern formed on the upper film as a mask to the upper film Etching; etching at least the etched upper film as a mask to etch the etch stop film; and an underlying film etch step etching at least the etched etch stop film as a mask And an upper film side etching step of causing at least the upper resist film to be etched by using the resist pattern as a mask, whereby the edge of the upper film is formed to be retracted by a specific width from an edge of the lower film In the edge portion, the underlayer film includes a material etchable by an etchant of the upper film, and the etch stop film includes a material resistant to an etchant of the upper film.
(構成2) (constituent 2)
如構成1之光罩之製造方法，其特徵在於：於上述上層膜側蝕步驟之後，將上述上層膜作為遮罩而對上述蝕刻終止膜進行蝕刻，使上述下層膜之表面於上述緣邊部露出。 A method of manufacturing a photomask according to the first aspect, characterized in that after the upper film side etching step, the etching film is etched by using the upper film as a mask, and the surface of the lower film is on the edge portion Exposed.
(構成3) (constitution 3)
如構成1或2之光罩之製造方法，其特徵在於：於上述上層膜側蝕步驟中，將所形成之上述緣邊部之緣邊寬度設為上述特定寬度，當將該緣邊寬度設為W(μm)時，0<W≦1.0。 A method of manufacturing a photomask according to claim 1 or 2, wherein in the step of etching the upper layer film, the width of the edge of the edge portion formed is set to the specific width, and when the width of the edge is set When it is W (μm), 0 < W ≦ 1.0.
(構成4) (construction 4)
如構成1至3中任一項之光罩之製造方法，其特徵在於：當將上述下層膜之膜厚設為A(Å)時，A≦300。 The method of producing a photomask according to any one of the first to third aspects, wherein when the film thickness of the underlayer film is A (Å), A ≦ 300.
(構成5) (Constituent 5)
如構成1至4中任一項之光罩之製造方法，其特徵在於：於上述上層膜側蝕步驟中，每單位時間之上述上層膜之平均側蝕量為上述下層膜之平均側蝕量之1.5倍以上。 The method of manufacturing a reticle according to any one of claims 1 to 4, characterized in that, in the step of etching the upper layer film, the average side etching amount of the upper layer film per unit time is an average side etching amount of the lower layer film 1.5 times or more.
(構成6) (constituent 6)
如構成1至5中任一項之光罩之製造方法，其特徵在於：當將上述下層膜之膜厚設為A(Å)，將上述上層膜之膜厚設為B(Å)時，B≧2A。 The method of manufacturing a photomask according to any one of the first to fifth aspect, wherein when the film thickness of the underlayer film is A (Å) and the film thickness of the upper film is B (Å), B≧2A.
(構成7) (constituent 7)
如構成1至6中任一項之光罩之製造方法，其特徵在於：上述轉印用圖案包括：透光部，其由上述透明基板表面露出而成；遮光部，其由上述下層膜、上述蝕刻終止膜及上述上層膜積層於上述透明基板上而成；以及半透光部，其由上述下層膜或上述下層膜與上述蝕刻終止膜之積層膜形成於上述透明基板上而成，上述緣邊部為位於上述透光部與上述遮光部之間之固定寬度之上述半透光部。 The method for producing a photomask according to any one of the first to sixth aspect, wherein the transfer pattern includes: a light transmitting portion which is exposed from a surface of the transparent substrate; and a light blocking portion which is formed by the underlayer film And the semi-transmissive portion is formed on the transparent substrate by the underlayer film or the laminated film of the underlayer film and the etch stop film, wherein the etch stop film and the upper film are laminated on the transparent substrate, and the semi-transmissive portion is formed on the transparent substrate. The rim portion is the semi-transmissive portion having a fixed width between the light transmitting portion and the light blocking portion.
(構成8) (Composition 8)
如構成1至7中任一項之光罩之製造方法，其特徵在於：上述下層膜係對於用於上述光罩曝光之曝光之光之透射率為5%~80%的半透光膜。 The method of manufacturing a photomask according to any one of the first to seventh aspect, wherein the lower layer film is a semi-transmissive film having a transmittance of 5% to 80% for light exposed to the exposure of the mask.
(構成9) (constituent 9)
如構成1至8中任一項之光罩之製造方法，其特徵在於：上述轉印用圖案包含線與間隙圖案。 The method of manufacturing a photomask according to any one of the first to eighth aspect, wherein the transfer pattern includes a line and a gap pattern.
(構成10) (construction 10)
如構成1至8中任一項之光罩之製造方法，其特徵在於：上述轉印用圖案包含孔圖案或點圖案。 The method of manufacturing a photomask according to any one of the first to eighth aspect, wherein the transfer pattern includes a hole pattern or a dot pattern.
(構成11) (Structure 11)
如構成1至10中任一項之光罩之製造方法，其特徵在於：上述下層膜對於用於上述光罩曝光之曝光之光中所含之代表性波長之光的相位偏移量為60度以下。 The method of manufacturing a photomask according to any one of the items 1 to 10, characterized in that the phase shift amount of the light of a representative wavelength contained in the light for exposure of the mask exposure is 60. Below the degree.
(構成12) (construction 12)
一種光罩，其特徵在於：其係於透明基板上包括轉印用圖案者，上述轉印用圖案包括：透光部，其由上述透明基板表面露出而成；遮光部，其由下層膜、蝕刻終止膜及上層膜積層於上述透明基板上而成；以及緣邊部，其為鄰接於上述遮光部而以特定寬度形成者， 且由上述下層膜或上述下層膜與上述蝕刻終止膜之積層膜形成於上述透明基板上而成，上述下層膜包含可藉由上述上層膜之蝕刻劑蝕刻之材料，上述蝕刻終止膜包含對於上述上層膜之蝕刻劑具有耐受性之材料。 A photomask comprising a transfer pattern on a transparent substrate, wherein the transfer pattern includes: a light transmissive portion exposed from a surface of the transparent substrate; and a light shielding portion, the lower layer film, The etching stopper film and the upper film layer are formed on the transparent substrate; and the rim portion is formed to have a specific width adjacent to the light shielding portion. And the laminated film formed by the underlayer film or the underlayer film and the etch stop film is formed on the transparent substrate, and the underlayer film comprises a material etchable by an etchant of the upper film, wherein the etch stop film comprises The etchant of the upper film is resistant to the material.
(構成13) (construction 13)
如構成12之光罩，其特徵在於：當將上述緣邊部之寬度設為W(μm)時，0<W≦1.0。 In the reticle of the configuration 12, when the width of the rim portion is W (μm), 0 < W ≦ 1.0.
(構成14) (construction 14)
如構成12或13之光罩，其特徵在於：當將上述下層膜之膜厚設為A(Å)時，A≦300。 A photomask according to 12 or 13, characterized in that when the film thickness of the underlayer film is A (Å), A ≦ 300.
(構成15) (construction 15)
如構成12至14中任一項之光罩，其特徵在於：當將上述下層膜之膜厚設為A(Å)，將上述上層膜之膜厚設為B(Å)時，B≧2A。 The photomask according to any one of 12 to 14, wherein when the film thickness of the underlayer film is A (Å) and the film thickness of the upper film is B (Å), B ≧ 2A .
(構成16) (construction 16)
如構成12至15中任一項之光罩，其特徵在於：上述轉印用圖案包含線與間隙圖案。 The photomask according to any one of 12 to 15, wherein the transfer pattern includes a line and a gap pattern.
(構成17) (Construction 17)
如構成12至15中任一項之光罩，其特徵在於：上述轉印用圖案包含孔圖案或點圖案。 The photomask according to any one of 12 to 15, wherein the transfer pattern comprises a hole pattern or a dot pattern.
(構成18) (Composition 18)
一種平面顯示器之製造方法，其包括如下步驟：準備藉由如構成1至11中任一項之光罩之製造方法而製造之光罩、或如構成12至17中任一項之光罩，藉由曝光裝置將上述轉印用圖案轉印至被轉印體上。 A method of manufacturing a flat panel display, comprising the steps of: preparing a photomask manufactured by the method of manufacturing a photomask according to any one of 1 to 11, or a photomask according to any one of 12 to 17; The transfer pattern is transferred onto the transfer target by an exposure device.
根據本發明，即使於下層膜與上層膜之蝕刻特性共通之情形 時，亦能夠穩定且正確地形成寬度窄的緣邊部。根據本發明，可緩和與用於光罩之下層膜與上層膜之材料相關之制約，且可穩定且正確地形成寬度窄的圖案。 According to the present invention, even in the case where the etching characteristics of the underlayer film and the upper layer film are common At the same time, it is also possible to form the narrow edge portion stably and correctly. According to the present invention, the restrictions associated with the material for the underlayer film and the upper film of the photomask can be alleviated, and the pattern having a narrow width can be stably and correctly formed.
又，藉此，可提供具備微細且精度高之轉印用圖案之光罩及其製造方法。又，使用本發明所獲得之光罩而製造平面顯示器，藉此，能夠實現平面顯示器之配線圖案之微細化。 Further, by this, it is possible to provide a photomask having a fine and highly precise transfer pattern and a method of manufacturing the same. Moreover, by manufacturing a flat display using the reticle obtained by this invention, the wiring pattern of a flat display can be made fine.
1‧‧‧透明基板 1‧‧‧Transparent substrate
2、2a、2c、20p‧‧‧下層膜 2, 2a, 2c, 20p‧‧‧ underlayer
2b‧‧‧半透光膜 2b‧‧‧ semi-transparent film
3‧‧‧蝕刻終止膜 3‧‧‧etching stop film
3a‧‧‧蝕刻終止膜(蝕刻終止膜圖案) 3a‧‧‧etch stop film (etch stop film pattern)
4、30a‧‧‧上層膜 4, 30a‧‧‧ upper film
4a‧‧‧上層膜圖案 4a‧‧‧Upper film pattern
4b、4c‧‧‧遮光膜圖案 4b, 4c‧‧‧ shading film pattern
5‧‧‧抗蝕膜 5‧‧‧Resist film
5a‧‧‧抗蝕圖案 5a‧‧‧resist pattern
200‧‧‧光罩基底 200‧‧‧Photomask base
300‧‧‧光罩 300‧‧‧Photomask
A‧‧‧遮光部 A‧‧‧Lighting Department
H‧‧‧孔部 H‧‧‧ Hole Department
R、Rl、Rr‧‧‧緣邊部 R, Rl, Rr‧‧‧ edge
W‧‧‧緣邊寬度 W‧‧‧ rim width
圖1(a)~圖1(i)係依照步驟順序而表示本發明之一實施形態之光罩之製造方法的光罩基底等之剖面構成圖。 1(a) to 1(i) are cross-sectional structural views showing a mask base and the like of a method of manufacturing a mask according to an embodiment of the present invention, in order of steps.
圖2係表示半透光膜之膜厚為430Å時之蝕刻時間與遮光膜(上層膜)及半透光膜(下層膜)之側蝕量之相互關係的圖。 Fig. 2 is a view showing the relationship between the etching time when the film thickness of the semi-transmissive film is 430 Å and the amount of side etching of the light shielding film (upper film) and the semi-transmissive film (lower film).
圖3係表示半透光膜之膜厚為280Å時之蝕刻時間與遮光膜(上層膜)及半透光膜(下層膜)之側蝕量之相互關係的圖。 Fig. 3 is a view showing the relationship between the etching time when the film thickness of the semi-transmissive film is 280 Å and the amount of side etching of the light shielding film (upper film) and the semi-transmissive film (lower film).
圖4係表示半透光膜之膜厚為210Å時之蝕刻時間與遮光膜(上層膜)及半透光膜(下層膜)之側蝕量之相互關係的圖。 Fig. 4 is a view showing the relationship between the etching time when the film thickness of the semi-transmissive film is 210 Å and the amount of side etching of the light shielding film (upper film) and the semi-transmissive film (lower film).
圖5係表示半透光膜之膜厚為160Å時之蝕刻時間與遮光膜(上層膜)及半透光膜(下層膜)之側蝕量之相互關係的圖。 Fig. 5 is a graph showing the relationship between the etching time when the film thickness of the semi-transmissive film is 160 Å and the amount of side etching of the light shielding film (upper film) and the semi-transmissive film (lower film).
圖6係表示Cr系半透光膜之透射率與膜厚之相互關係之圖。 Fig. 6 is a view showing the relationship between the transmittance and the film thickness of the Cr-based semi-transmissive film.
圖7(a)、圖7(b)、圖7(c)係分別表示光罩之轉印用圖案例之俯視圖。 7(a), 7(b), and 7(c) are plan views each showing an example of a pattern for transfer of a photomask.
圖8(A)~圖8(F)係表示先前文獻所揭示之光罩之製造步驟之圖。 8(A) to 8(F) are views showing the steps of manufacturing the photomask disclosed in the prior literature.
圖9(a)~圖9(i)係表示應用有先前文獻所揭示之方法之光罩之製造步驟的參考圖。 9(a) to 9(i) are reference diagrams showing the manufacturing steps of the photomask to which the method disclosed in the prior art is applied.
以下，參照圖式對用以實施本發明之形態進行詳述。 Hereinafter, embodiments for carrying out the invention will be described in detail with reference to the drawings.
圖1係依照步驟順序而表示本發明之一實施形態之光罩之製造方 法的光罩基底等之剖面構成圖。 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing the manufacture of a photomask according to an embodiment of the present invention in accordance with the order of steps A cross-sectional view of a mask base or the like of the method.
首先，如圖1(a)所示，準備光罩基底200。該光罩基底200具備與上述圖9(a)相同之構成。即，於透明基板1上依序積層有下層膜2、蝕刻終止膜3及上層膜4，進而於最表面形成有抗蝕膜5。 First, as shown in FIG. 1(a), a mask substrate 200 is prepared. The mask base 200 has the same configuration as that of Fig. 9(a) described above. That is, the lower layer film 2, the etching stopper film 3, and the upper layer film 4 are sequentially laminated on the transparent substrate 1, and the resist film 5 is formed on the outermost surface.
作為本實施形態之光罩200中所使用之透明基板1，可使用將玻璃等透明材料研磨得平坦、平滑所得之透明基板。作為用於製造平面顯示器等顯示裝置之光罩200，主平面之一邊為300mm以上者較佳。 As the transparent substrate 1 used in the mask 200 of the present embodiment, a transparent substrate obtained by polishing a transparent material such as glass to be flat and smooth can be used. As the photomask 200 for manufacturing a display device such as a flat panel display, it is preferable that one side of the main plane is 300 mm or more.
於本實施形態中，下層膜2設為半透光膜，上層膜4設為遮光膜。 In the present embodiment, the lower layer film 2 is a semi-transmissive film, and the upper layer film 4 is a light shielding film.
關於上述半透光膜之材料，於Cr系之情形時，除了可使用Cr單體之外，亦可使用Cr之化合物(Cr之氧化物、氮化物、碳化物、氮氧化物、碳氮化物、碳氮氧化物等)。能夠藉由Cr用之蝕刻劑(例如包含硝酸鈰銨之蝕刻液)對該Cr系之半透光膜進行蝕刻。 Regarding the material of the semi-transmissive film, in the case of the Cr system, in addition to the Cr monomer, a compound of Cr (a oxide, a nitride, a carbide, an oxynitride, or a carbonitride of Cr) may be used. , carbon oxynitride, etc.). The Cr-based semi-transmissive film can be etched by an etchant for Cr (for example, an etchant containing cerium ammonium nitrate).
又，上述半透光膜亦可設為Si系之膜。於該情形時，亦可使用Si之化合物(SiON等)或過渡金屬矽化物(MoSi等)之化合物。作為MoSi之化合物，可例示MoSi之氮化物、氮氧化物、碳氮氧化物等。 Further, the semi-transmissive film may be a Si-based film. In this case, a compound of Si (SiON or the like) or a transition metal halide (MoSi or the like) may also be used. Examples of the compound of MoSi include a nitride of MoSi, an oxynitride, a oxycarbonitride, and the like.
根據光罩之用途而選擇半透光膜所具有之光學特性。例如，半透光膜對於用於光罩曝光之曝光之光之透射率可設為5%~80%。更佳為10%~60%，且相位偏移量為90度以下，更佳可設為5度~60度。 The optical characteristics of the semi-transmissive film are selected according to the use of the photomask. For example, the transmissivity of the semi-transmissive film for exposure to reticle exposure can be set to 5% to 80%. More preferably, it is 10% to 60%, and the phase shift amount is 90 degrees or less, and more preferably 5 degrees to 60 degrees.
或者，半透光膜對於用於光罩曝光之曝光之光之透射率為2%~30%，更佳為3%~10%，且相位偏移量為90度~270度，更佳可設為150度~210度。 Alternatively, the semi-transmissive film has a transmittance of 2% to 30%, more preferably 3% to 10%, and a phase shift amount of 90 to 270 degrees for the exposure light used for exposure of the mask, and more preferably Set to 150 degrees to 210 degrees.
再者，作為用於光罩曝光之曝光之光，包含i射線、h射線、g射線中之任一者之曝光之光較佳，更佳為使用包含全部之i射線、h射線、g射線之波長區域之光源，藉此可獲得充分之照射量。於該情形時，對於波長區域中所含之代表性波長(例如h射線)之透射率及相位 偏移量較佳處於上述範圍內。 Further, as the light for exposure of the reticle exposure, it is preferable to include the exposure light of any one of the i-ray, the h-ray, and the g-ray, and it is more preferable to use all the i-rays, h-rays, and g-rays. A light source in the wavelength region, whereby a sufficient amount of illumination can be obtained. In this case, the transmittance and phase of a representative wavelength (for example, h-ray) contained in the wavelength region The offset is preferably within the above range.
又，於本發明中，當將半透光膜之膜厚設為A(Å)時，較佳為A≦300。關於該內容將於下文敍述。 Further, in the present invention, when the film thickness of the semi-transmissive film is A (Å), A ≦ 300 is preferable. This content will be described below.
上述光罩基底200中，於上述半透光膜(下層膜2)上形成蝕刻終止膜3。該蝕刻終止膜3設為蝕刻特性與上述半透光膜不同之膜，即具有蝕刻選擇性之膜。因此，於半透光膜為Cr系之情形時，蝕刻終止膜3可設為Si系之膜，於半透光膜為Si系之情形時，蝕刻終止膜3可設為Cr系之膜。作為蝕刻終止膜3之材料之具體例，可列舉與作為上述半透光膜之材料而列舉之材料相同之材料。 In the above mask substrate 200, an etching stopper film 3 is formed on the semi-transmissive film (lower layer film 2). The etching stopper film 3 is a film having an etching property different from that of the above-described semi-transmissive film, that is, a film having an etching selectivity. Therefore, when the semi-transmissive film is a Cr-based film, the etching-stop film 3 can be a Si-based film, and when the semi-transmissive film is a Si-based film, the etching-stop film 3 can be a Cr-based film. Specific examples of the material of the etching stopper film 3 include the same materials as those exemplified as the material of the semi-transmissive film.
又，於上述蝕刻終止膜3上形成遮光膜作為上層膜4。遮光膜之材料設為具有與上述半透光膜共通之蝕刻特性之材料。於本實施形態中，於半透光膜為Cr系之情形時，遮光膜亦設為Cr系之膜。作為遮光膜之材料，可列舉與作為上述半透光膜之材料而列舉之材料相同之材料。再者，較佳為於遮光膜之表面形成具有抗反射功能之表層(抗反射層)，例如，可較佳地列舉Cr化合物層(例如Cr之氧化物等)。 Further, a light shielding film is formed on the etching stopper film 3 as the upper layer film 4. The material of the light shielding film is made of a material having etching characteristics common to the above-described semi-transmissive film. In the present embodiment, when the semi-transmissive film is Cr-based, the light-shielding film is also a Cr-based film. Examples of the material of the light-shielding film include the same materials as those exemplified as the material of the semi-transmissive film. Further, it is preferable to form a surface layer (antireflection layer) having an antireflection function on the surface of the light shielding film. For example, a Cr compound layer (for example, an oxide of Cr or the like) is preferably exemplified.
再者，於本實施形態中，半透光膜及遮光膜均為Cr系之膜，蝕刻終止膜為Si系之膜。 Further, in the present embodiment, the semi-transmissive film and the light-shielding film are both Cr-based films, and the etching stopper film is a Si-based film.
上述下層膜2、蝕刻終止膜3、上層膜4等之成膜方法可應用濺鍍法等眾所周知之方法。除了單層地構成各膜之情形之外，亦可積層地構成各膜。又，於不影響本發明之作用效果之範圍內，其他構成膜亦可存在於下層膜2、蝕刻終止膜3、上層膜4中之任一者的上方、下方或中間。 A well-known method such as a sputtering method can be applied to the film formation method of the underlayer film 2, the etching stopper film 3, and the upper layer film 4. In addition to the case where each film is formed in a single layer, each film may be laminated. Further, the other constituent film may be present above, below or in the middle of any of the underlayer film 2, the etching stopper film 3, and the overlayer film 4 within a range that does not affect the effects of the present invention.
於使用雷射描繪裝置作為描繪裝置之情形時，形成於上述光罩基底200之最表面之抗蝕膜5作為光阻膜。光阻膜可為正型，亦可為負型，但於本實施形態中，作為正型而進行說明。 When a laser drawing device is used as the drawing device, the resist film 5 formed on the outermost surface of the mask substrate 200 serves as a photoresist film. The resist film may be a positive type or a negative type, but in the present embodiment, it will be described as a positive type.
其次，使用描繪裝置而於上述光罩基底200描繪所期望之圖案， 其次進行顯影，藉此形成抗蝕圖案5a(參照圖1(b))。 Next, the desired pattern is drawn on the mask substrate 200 using a drawing device, Next, development is performed to form a resist pattern 5a (see Fig. 1(b)).
繼而，將所形成之抗蝕圖案5a作為遮罩，對上層膜4之遮光膜進行蝕刻(預蝕刻)(參照圖1(c))。藉此，形成上層膜圖案4a。此處，遮光膜為Cr系之膜，因此，藉由Cr用之蝕刻液進行濕式蝕刻。 Then, the formed resist pattern 5a is used as a mask, and the light shielding film of the upper film 4 is etched (pre-etched) (see FIG. 1(c)). Thereby, the upper film pattern 4a is formed. Here, since the light-shielding film is a Cr-based film, wet etching is performed by an etching solution for Cr.
其次，至少將經蝕刻之遮光膜(上層膜圖案4a)作為遮罩，使用緩衝氫氟酸作為蝕刻液，對蝕刻終止膜3進行蝕刻(參照圖1(d))。藉此，形成蝕刻終止膜圖案3a。 Next, at least the etched light-shielding film (upper layer film pattern 4a) is used as a mask, and the etching stopper film 3 is etched using buffered hydrofluoric acid as an etching liquid (refer FIG. 1 (d)). Thereby, the etching stopper film pattern 3a is formed.
繼而，至少將經蝕刻之蝕刻終止膜(蝕刻終止膜圖案3a)作為遮罩，再次藉由Cr用蝕刻液而對下層膜2之半透光膜進行蝕刻(參照圖1(e))。藉此，形成下層膜圖案2a，並且透明基板1之一部分露出，從而形成透光部。 Then, at least the etched etch stop film (etch stop film pattern 3a) is used as a mask, and the semi-transmissive film of the underlayer film 2 is etched again by the etching solution for Cr (see FIG. 1(e)). Thereby, the underlayer film pattern 2a is formed, and one portion of the transparent substrate 1 is exposed, thereby forming a light transmitting portion.
其次，利用Cr用蝕刻液進行追加蝕刻(上層膜之側蝕)(參照圖1(f))。此時，上述抗蝕圖案5a成為遮罩，遮光膜受到側蝕，藉此，遮光膜之邊緣移動(後退)至較抗蝕圖案5a之邊緣更靠內側處，從而成為遮光膜圖案4b。藉此，遮光膜之邊緣移動(後退)至較蝕刻終止膜3a之邊緣及半透光膜2b之邊緣中之任一者更靠內側處。此時，半透光膜之邊緣亦與蝕刻液接觸，因此，半透光膜亦受到側蝕。然而，實際上若與上述遮光膜作比較，則藉由側蝕產生之半透光膜邊緣之後退量極小。 Next, additional etching (side etching of the upper film) is performed using an etching solution for Cr (see FIG. 1(f)). At this time, the resist pattern 5a serves as a mask, and the light-shielding film is subjected to side etching, whereby the edge of the light-shielding film is moved (retracted) to the inner side of the edge of the resist pattern 5a, thereby forming the light-shielding film pattern 4b. Thereby, the edge of the light shielding film is moved (retracted) to the inner side of either the edge of the etching stopper film 3a and the edge of the semi-transmissive film 2b. At this time, the edge of the semi-transmissive film is also in contact with the etching liquid, and therefore, the semi-transmissive film is also subjected to side etching. However, in actuality, when compared with the above-mentioned light shielding film, the edge of the semi-transmissive film produced by the side etching is extremely small.
繼而，進一步繼續進行追加蝕刻(參照圖1(g))。於上述透光部形成(上述圖1(e)步驟)後經過160秒之時間點結束蝕刻。 Then, additional etching is further continued (see FIG. 1(g)). The etching was terminated at a time point of 160 seconds after the formation of the light transmitting portion (step (e) of Fig. 1 described above).
其結果，藉由遮光膜之側蝕，遮光膜之邊緣進一步移動(後退)至內側，成為遮光膜圖案4c。沿遮光膜之邊緣形成有如下緣邊部，該緣邊部係半透光膜及蝕刻終止膜以較窄之固定寬度突出而成之形態之緣邊部。此處，若將遮光膜之邊緣與半透光膜之邊緣之間隔設為緣邊寬度，則於本實施形態中，緣邊寬度為1μm以下。 As a result, the edge of the light-shielding film is further moved (retracted) to the inner side by the side etching of the light-shielding film to become the light-shielding film pattern 4c. A rim portion is formed along the edge of the light-shielding film, and the rim portion is a rim portion of the form in which the semi-transmissive film and the etch stop film are protruded by a narrow fixed width. Here, when the distance between the edge of the light-shielding film and the edge of the semi-transmissive film is the rim width, in the present embodiment, the rim width is 1 μm or less.
繼而，剝離除去抗蝕圖案5a(參照圖1(h))。 Then, the resist pattern 5a is peeled off (see FIG. 1(h)).
然而，於蝕刻除去蝕刻終止膜之情形時(參照下述)，亦可於其後除去抗蝕圖案。即，亦可於全部之蝕刻步驟完成之後，除去抗蝕圖案。 However, in the case where the etching stopper film is removed by etching (refer to the following), the resist pattern may be removed thereafter. That is, the resist pattern may be removed after all the etching steps are completed.
又，接續上述步驟，將表面之遮光膜(上層膜圖案4c)作為遮罩，使用緩衝氫氟酸作為蝕刻液，蝕刻除去已露出之部分之蝕刻終止膜3a，藉此，成為緣邊部(Rl、Rr)之半透光膜表面露出之狀態(參照圖1(i))。 Further, in the above-described step, the surface light-shielding film (upper layer film pattern 4c) is used as a mask, and the etch-stop film 3a which is exposed is removed by using buffered hydrofluoric acid as an etching liquid, thereby forming a rim portion ( The surface of the semi-transmissive film of R1 and Rr) is exposed (see Fig. 1(i)).
以上述方式獲得之本實施形態之光罩300為具備轉印用圖案之光罩，該轉印用圖案具有：透光部，其由透明基板1露出而成；遮光部，其由半透光膜(下層膜2)、蝕刻終止膜3及遮光膜(上層膜4)積層於透明基板1上而成；以及寬度窄的緣邊部(Rl、Rr)，其於透明基板1上形成有半透光膜且未形成有遮光膜。再者，將對本實施形態之光罩所具備之轉印用圖案進行俯視所得之圖例示於圖7，於後文中對此進行說明。 The photomask 300 of the present embodiment obtained as described above is a photomask including a transfer pattern having a light transmitting portion which is exposed by the transparent substrate 1 and a light blocking portion which is semi-transparent. The film (lower film 2), the etching stopper film 3, and the light shielding film (upper film 4) are laminated on the transparent substrate 1; and the narrow edge portions (R1, Rr) are formed on the transparent substrate 1 by half. The light transmissive film is not formed with a light shielding film. In addition, a drawing obtained by looking down the transfer pattern provided in the photomask of the present embodiment is shown in FIG. 7, which will be described later.
再者，雖存在如下情形，即，於上述半透光膜蝕刻步驟(圖1(e))中開始對上層側之遮光膜進行側蝕，但該情形無任何缺陷。根據本發明之較佳形態，由於半透光膜之膜厚十分小，且半透光膜蝕刻步驟之時間短，故而於該階段中產生之遮光膜之側蝕量極小。無論如何，可利用上述追加蝕刻(圖1(f)、(g))之步驟，對最終之遮光膜之側蝕量進行調整，獲得所期望之緣邊寬度。 Further, there is a case where the light-shielding film on the upper layer side is subjected to side etching in the above-described semi-transmissive film etching step (Fig. 1 (e)), but this case is not defective. According to a preferred embodiment of the present invention, since the film thickness of the semi-transmissive film is extremely small and the time of the semi-transmissive film etching step is short, the amount of side etching of the light-shielding film generated in this stage is extremely small. In any case, the amount of side etching of the final light-shielding film can be adjusted by the above-described additional etching (Fig. 1 (f), (g)) to obtain a desired rim width.
然而，蝕刻除去上述蝕刻終止膜3a之步驟(圖1(i))亦可省略。即，亦能夠使蝕刻終止膜殘留於緣邊部。於該情形時，蝕刻終止膜3只要為使光透過之素材，且適當地選擇其透射率等光學特性即可。 However, the step of etching away the above-described etching stopper film 3a (Fig. 1 (i)) may also be omitted. That is, it is also possible to leave the etching stopper film on the rim portion. In this case, the etching stopper film 3 may be an optical property such as a transmittance thereof as long as it is a material that transmits light.
又，即使不設置上述蝕刻終止膜之蝕刻除去步驟，亦可利用其他步驟(例如於全部之蝕刻步驟結束之後，剝離抗蝕圖案或將已完成 之光罩洗淨之過程等)將蝕刻終止膜之露出部分除去。 Moreover, even if the etching removal step of the etching stopper film is not provided, other steps may be used (for example, after all the etching steps are finished, the resist pattern is peeled off or will be completed). The process of cleaning the photomask, etc.) removes the exposed portion of the etch stop film.
如上所述，亦可使蝕刻終止膜殘留於緣邊部，但更佳為利用任一個步驟而除去該蝕刻終止膜。 As described above, the etching stopper film may remain in the rim portion, but it is more preferable to remove the etching stopper film by any one of the steps.
先前，已說明認為於下層膜與上層膜之蝕刻特性共通之情形時，極難以應用專利文獻2之製法，利用一次描繪而使兩個膜分別圖案化為不同之尺寸。然而實際上，根據上述步驟顯而易見，使用具有如圖1(a)所示之積層構造之光罩基底200，利用一次描繪(圖1(b)步驟)與上層膜之側蝕(圖1(f)、(g)步驟)，藉此，可形成如下半透光部，該半透光部係由形成於透明基板1上之半透光膜(下層膜2)之表面、或半透光膜與蝕刻終止膜之積層膜之表面以特定寬度露出而成。本發明者進行仔細研究後才發現了上述內容。 In the case where it is considered that the etching property of the underlayer film and the upper film is common, it is extremely difficult to apply the method of Patent Document 2, and the two films are respectively patterned into different sizes by one drawing. Actually, however, it is apparent from the above-described steps that the mask substrate 200 having the laminated structure as shown in Fig. 1(a) is used, and the side etching (Fig. 1 (b)) and the upper film are used for the side etching (Fig. 1 (f) And (g) step), whereby a semi-transmissive portion formed by a surface of the semi-transparent film (lower film 2) formed on the transparent substrate 1 or a semi-transparent film may be formed The surface of the laminated film with the etching stopper film is exposed at a specific width. The inventors have found out the above contents after careful study.
該半透光部為如下部位，其以固定寬度沿遮光部之周緣形成，因此相當於緣邊部。再者，該半透光部位於遮光部與透光部之間，因此，亦可被認作形成於透光部之周緣之緣邊部。於緣邊部，將遮光膜之邊緣(即，遮光部之邊緣)與半透光膜之邊緣之間隔設為緣邊寬度。 The semi-transmissive portion is a portion that is formed along the peripheral edge of the light-shielding portion with a fixed width, and thus corresponds to the rim portion. Further, since the semi-transmissive portion is located between the light-shielding portion and the light-transmitting portion, it may be considered to be formed at the edge portion of the periphery of the light-transmitting portion. At the rim portion, the distance between the edge of the light-shielding film (that is, the edge of the light-shielding portion) and the edge of the semi-transmissive film is set as the rim width.
已確認於圖1(f)~圖1(g)之步驟中，儘管半透光膜與遮光膜均為可藉由Cr系蝕刻液蝕刻之材料，但半透光膜之每單位時間之側蝕之進行尺寸(側蝕量)小於遮光膜。其結果，應能夠形成上述緣邊部。 It has been confirmed in the steps of FIG. 1(f) to FIG. 1(g) that although the semi-transmissive film and the light-shielding film are both materials which can be etched by the Cr-based etching solution, the side of the semi-transparent film per unit time The size of the etching (the amount of side etching) is smaller than that of the light shielding film. As a result, it is possible to form the above-mentioned rim portion.
與此相關地，將Cr用蝕刻液之蝕刻時間與遮光膜(上層膜)及半透光膜(下層膜)之側蝕量之相互關係表示於圖2~圖5。圖2~圖5分別係對如下情形時之半透光膜與遮光膜各自之側蝕量(邊緣之後退尺寸)進行測定所得之圖，上述情形係指準備於透明基板上依序積層半透光膜、蝕刻終止膜及遮光膜而成之光罩基底，實施圖1(a)~圖1(e)之步驟後，利用Cr用蝕刻液進行側蝕之情形。 In connection with this, the relationship between the etching time of the etching liquid for Cr and the amount of side etching of the light shielding film (upper film) and the semi-transmissive film (lower film) is shown in FIGS. 2 to 5 . Fig. 2 to Fig. 5 are graphs for measuring the amount of side etching (edge retreat size) of the semi-transmissive film and the light-shielding film in the following cases, which are prepared by sequentially laminating a transparent substrate. The mask base formed of the light film, the etching stopper film, and the light-shielding film is subjected to the side etching of the etching liquid of Cr after the steps of FIGS. 1(a) to 1(e) are performed.
於圖2~圖5中，半透光膜之膜厚不同。詳細而言，半透光膜之膜厚於圖2中為430Å(相當於對於h射線之透射率為10%)，於圖3中為 280Å(相當於對於h射線之透射率為20%)，於圖4中為210Å(相當於對於h射線之透射率為30%)，於圖5中為160Å(相當於對於h射線之透射率為40%)。再者，Cr系半透光膜之透射率與膜厚之相互關係如圖6所示。然而，亦可藉由變更半透光膜之組成而將Cr系半透光膜之透射率與膜厚之相互關係設為與圖6不同之相互關係。例如，於藉由濺鍍法進行成膜之情形時，能夠根據所導入之氣體種類(氮、氧、二氧化碳等)及其流量而進行調整。 In FIGS. 2 to 5, the film thickness of the semi-transmissive film is different. In detail, the film thickness of the semi-transmissive film is 430 Å in FIG. 2 (corresponding to a transmittance of 10% for h rays), which is shown in FIG. 280 Å (corresponding to a transmittance of 20% for h-rays), 210 Å in Figure 4 (corresponding to a transmittance of 30% for h-rays), and 160 Å in Figure 5 (corresponding to the transmittance for h-rays) 40%). Further, the relationship between the transmittance of the Cr-based semi-transmissive film and the film thickness is shown in Fig. 6. However, the relationship between the transmittance of the Cr-based semi-transmissive film and the film thickness can be changed to be different from that of FIG. 6 by changing the composition of the semi-transmissive film. For example, when a film is formed by a sputtering method, it can be adjusted depending on the type of gas to be introduced (nitrogen, oxygen, carbon dioxide, etc.) and its flow rate.
另一方面，遮光膜之膜厚均設為1200Å(光學濃度為3以上)。 On the other hand, the film thickness of the light-shielding film was set to 1200 Å (the optical density was 3 or more).
此處，於圖2(半透光膜之膜厚為430Å)之情形時，遮光膜之側蝕速度為平均96nm/min，半透光膜之側蝕速度為平均67nm/min，兩個膜之側蝕速度之差小。又，經過160秒後之兩個膜之側蝕量之差(相當於半透光膜表面露出而形成之緣邊部之寬度(緣邊寬度))為77nm左右。 Here, in the case of FIG. 2 (the film thickness of the semi-transmissive film is 430 Å), the undercut speed of the light-shielding film is 96 nm/min on average, and the undercut speed of the semi-transmissive film is 67 nm/min on average, two films. The difference in the etch rate is small. Further, the difference in the amount of side etching between the two films after 160 seconds (corresponding to the width (edge width) of the edge portion formed by exposing the surface of the semi-transmissive film) was about 77 nm.
另一方面，於圖5(半透光膜之膜厚為160Å)之情形時，遮光膜之側蝕速度增加至平均116nm/min，另一方面，半透光膜之側蝕速度停留於平均58nm/min，經過160秒後之兩個膜之側蝕量之差為153nm左右。 On the other hand, in the case of Fig. 5 (the film thickness of the semi-transmissive film is 160 Å), the side etching speed of the light-shielding film is increased to an average of 116 nm/min, and on the other hand, the side etching speed of the semi-transmissive film is maintained at an average At 58 nm/min, the difference in the amount of side etching between the two films after 160 seconds was about 153 nm.
即，根據圖2~圖5之結果可知，當半透光膜之膜厚為某程度以下時，半透光膜與遮光膜之側蝕量之差會變得明確，結果會形成如圖1(i)所示之緣邊寬度W之緣邊部(Rl、Rr)。 That is, according to the results of FIGS. 2 to 5, when the film thickness of the semi-transmissive film is a certain degree or less, the difference in the amount of side etching between the semi-transmissive film and the light-shielding film becomes clear, and as a result, it is formed as shown in FIG. (i) The edge portion (Rl, Rr) of the rim width W shown.
於本發明中，緣邊寬度W(μm)較佳為0<W≦1.0。更佳為0<W≦0.8，進而較佳為0.05≦W≦0.6。根據本發明，可穩定且正確地形成此種寬度窄的緣邊部，因此，本發明極其有用。 In the present invention, the rim width W (μm) is preferably 0 < W ≦ 1.0. More preferably, it is 0 < W ≦ 0.8, and further preferably 0.05 ≦ W ≦ 0.6. According to the present invention, such a narrow edge portion can be stably and accurately formed, and therefore, the present invention is extremely useful.
根據本發明者之研究，為了產生兩個膜之側蝕量之差而形成上述緣邊部，可考慮例如對膜材料進行選擇，但更有利的是應用適當範圍之膜厚。 According to the study of the present inventors, in order to form the rim portion in order to produce a difference in the amount of side etching between the two films, it is conceivable, for example, to select the film material, but it is more advantageous to apply a film thickness in an appropriate range.
根據上述圖2~圖5之結果可設想，當半透光膜之膜厚為300Å以下時，容易獲得兩個膜之側蝕速度之差。 According to the results of the above-described FIGS. 2 to 5, it is conceivable that when the film thickness of the semi-transmissive film is 300 Å or less, the difference in the side etching speed between the two films is easily obtained.
又，於本發明中，遮光膜之膜厚較佳為相對於半透光膜之膜厚更大，例如較為理想的是當將半透光膜(下層膜)之膜厚設為A(Å)，將遮光膜(上層膜)之膜厚設為B(Å)時，B≧2A。具體而言，B≧800，更佳為B≧1000。 Further, in the present invention, the film thickness of the light shielding film is preferably larger than the film thickness of the semi-transmissive film. For example, it is preferable to set the film thickness of the semi-transmissive film (lower film) to A (Å). When the film thickness of the light shielding film (upper film) is B (Å), B ≧ 2A. Specifically, B ≧ 800, more preferably B ≧ 1000.
又，根據本發明者之研究，已發現當將上述側蝕步驟中之每單位時間之平均之側蝕量設為「平均側蝕速度」，將半透光膜之平均側蝕速度設為Vh，將遮光膜之平均側蝕速度設為Vo時，於Vo≧1.5Vh，更佳為Vo≧1.8Vh之情形下，容易形成緣邊部。此處之側蝕係指於與基板主面平行之方向上進行之蝕刻。 Further, according to the study of the inventors, it has been found that when the average amount of side etching per unit time in the side etching step is "average side etching rate", the average side etching speed of the semi-transmissive film is set to Vh. When the average side etching rate of the light shielding film is set to Vo, it is easy to form the rim portion in the case of Vo ≧ 1.5 Vh, more preferably Vo ≧ 1.8 Vh. Here, the side etching refers to etching performed in a direction parallel to the main surface of the substrate.
再者，對圖2與圖3~圖5各自進行比較後，可理解當半透光膜之膜厚小，側蝕受到抑制時，出現了遮光膜之側蝕量反而得到促進之傾向。 Further, after comparing each of FIG. 2 and FIG. 3 to FIG. 5, it can be understood that when the film thickness of the semi-transmissive film is small and the side etching is suppressed, the amount of side etching of the light-shielding film tends to be promoted.
本發明所形成之緣邊部之尺寸亦會受到一般所謂之蝕刻速率之影響，該一般所謂之蝕刻速率係指取決於被蝕刻材料與蝕刻劑之組合之蝕刻進行速度。然而，根據本發明者之研究，新發現了即使取決於半透光膜與遮光膜之材料之蝕刻速率無大差異，亦可形成緣邊部。 The size of the rim portion formed by the present invention is also affected by the so-called etch rate, which is generally referred to as the etch rate depending on the combination of the material being etched and the etchant. However, according to the study by the inventors, it has been newly found that the rim portion can be formed even if there is no large difference in the etching rate depending on the material of the semi-transmissive film and the light-shielding film.
作為用以實施本發明之蝕刻法，考慮到乾式蝕刻與濕式蝕刻，但為了獲得上述側蝕之效果，具有等向性蝕刻之性質之濕式蝕刻較佳。 As the etching method for carrying out the present invention, dry etching and wet etching are considered, but in order to obtain the effect of the above-described side etching, wet etching having the property of isotropic etching is preferable.
上述緣邊部為如下區域，其於將形成於光罩之轉印用圖案轉印至被轉印體時，發揮光學功能。例如，於緣邊部為使曝光之光之代表性波長之相位大致反轉之相位偏移部之情形時(即，於緣邊部之光透射率為2%~30%，且相位偏移量90度~270度之情形時)，可使透過光罩之光之強度分佈更佳，從而提高轉印圖像之對比度。又，於上述緣 邊部不使曝光之光之代表性波長之相位反轉而使一部分之曝光之光透過之情形時(即，於緣邊部之光透射率為5%~80%，且相位偏移量為90度以下之情形時)，可使透過光罩之光量整體增加，從而確實地使被轉印體上之抗蝕膜感光。 The rim portion is an area that functions as an optical function when the transfer pattern formed on the photomask is transferred to the transfer target. For example, when the edge portion is a phase shift portion that substantially reverses the phase of the representative wavelength of the exposed light (that is, the light transmittance at the edge portion is 2% to 30%, and the phase shift is When the amount is 90 degrees to 270 degrees, the intensity distribution of the light transmitted through the mask can be better, thereby improving the contrast of the transferred image. Again, at the above edge When the edge portion does not reverse the phase of the representative wavelength of the exposed light to transmit a part of the exposed light (that is, the light transmittance at the edge portion is 5% to 80%, and the phase shift amount is When the temperature is 90 degrees or less, the amount of light transmitted through the photomask can be increased as a whole, and the resist film on the transfer target can be surely received.
圖7(a)~圖7(c)中表示本發明之具體之轉印用圖案例之俯視圖。 7(a) to 7(c) are plan views showing an example of a specific transfer pattern of the present invention.
圖7(a)~圖7(c)之轉印用圖案均包含透光部、遮光部、及半透光部。透光部係透明基板表面露出而成之部位。遮光部係於透明基板上積層下層膜、蝕刻終止膜及上層膜而成之部位。半透光部係於透明基板上形成有下層膜(或下層膜與蝕刻終止膜之積層膜)且未形成有上層膜之部位。上述緣邊部係由位於上述透光部與遮光部之間之固定寬度之半透光部形成。 The transfer patterns of FIGS. 7(a) to 7(c) each include a light transmitting portion, a light blocking portion, and a semi-light transmitting portion. The light transmitting portion is a portion where the surface of the transparent substrate is exposed. The light shielding portion is a portion where a lower layer film, an etching stopper film, and an upper layer film are laminated on the transparent substrate. The semi-transmissive portion is a portion where an underlayer film (or a laminate film of the underlayer film and the etching stopper film) is formed on the transparent substrate and the upper layer film is not formed. The rim portion is formed by a semi-transmissive portion having a fixed width between the light transmitting portion and the light shielding portion.
再者，於本實施形態中，下層膜、上層膜分別設為半透光膜、遮光膜，但當然無需限於該情形，可為構成光罩之任一種光學膜或功能膜。 In the present embodiment, the lower film and the upper film are each a semi-transmissive film or a light-shielding film. However, it is needless to say that it is not limited to this case, and may be any optical film or functional film constituting the photomask.
又，轉印用圖案內亦可包含緣邊部以外之半透光部例如為具有較緣邊部更大之寬度(例如超過1μm之寬度)之半透光部作為半透光部。 Further, the semi-transmissive portion other than the rim portion may be included in the transfer pattern as a semi-transmissive portion having a larger width (for example, a width exceeding 1 μm) than the rim portion.
以下，更詳細地對圖7所示之具體之轉印用圖案例進行說明。 Hereinafter, a specific example of the transfer pattern shown in FIG. 7 will be described in more detail.
圖7(a)係線與間隙圖案之例示。 Figure 7 (a) is an illustration of a line and gap pattern.
此處，線部與間隙部以特定之間距配置，該線部包含兩側具有半透光部之緣邊部Rl、Rr之遮光部A，該間隙部包含透明基板露出而成之透光部。本發明之包含半透光部之緣邊部尤其於將微細之圖案轉印至被轉印體上時特別有用，因此，線與間隙圖案之間距P(μm)(P=線寬度L+間隙寬度S)較佳為3μm~7μm，當線寬度L為2μm~4μm，間隙寬度S亦為2μm~4μm時，本發明之效果顯著。 Here, the line portion and the gap portion are disposed at a specific distance, and the line portion includes a light shielding portion A having rim portions R1 and Rr of the semi-transmissive portion on both sides, the gap portion including the transparent portion exposed by the transparent substrate . The edge portion including the semi-transmissive portion of the present invention is particularly useful especially when the fine pattern is transferred onto the object to be transferred, and therefore, the distance between the line and the gap pattern is P (μm) (P = line width L + gap width) S) is preferably 3 μm to 7 μm, and when the line width L is 2 μm to 4 μm and the gap width S is also 2 μm to 4 μm, the effect of the present invention is remarkable.
此處，緣邊寬度W(μm)較佳為具有0<W≦1.0之範圍之固定寬 度，如圖7(a)所示，緣邊部對稱地配置於線部之遮光部A之兩側。即，與遮光部A之相對向之兩側之兩條邊緣相鄰接的各緣邊部分別為實質上相同之寬度。當將遮光部A兩側之各緣邊部分別設為Rl、Rr，且將其緣邊寬度分別設為Wl與Wr時，Wr可處於Wl±0.1μm之範圍內。 Here, the rim width W (μm) is preferably a fixed width having a range of 0 < W ≦ 1.0. As shown in Fig. 7(a), the rim portions are symmetrically arranged on both sides of the light shielding portion A of the line portion. That is, each of the edge portions adjacent to the two edges on the opposite sides of the light shielding portion A has substantially the same width. When the edge portions on both sides of the light shielding portion A are respectively R1 and Rr, and the rim widths thereof are W1 and Wr, respectively, Wr can be in the range of W1 ± 0.1 μm.
又，較佳為，上述緣邊部之寬度尺寸較理想的是於光罩面內之不均小，於本發明中，當將緣邊寬度之中心值設為Wc(μm)時，可設為Wc-0.05≦W≦Wc+0.05。 Further, it is preferable that the width of the rim portion is less than the unevenness in the mask surface. In the present invention, when the center value of the rim width is Wc (μm), it may be set. It is Wc-0.05≦W≦Wc+0.05.
如此，於本發明中，可穩定且正確地於線部之遮光部A之兩側形成對稱且寬度尺寸之不均小的寬度窄的緣邊部之圖案。 As described above, in the present invention, the pattern of the rim portion having a narrow width and a small width unevenness can be stably and accurately formed on both sides of the light shielding portion A of the line portion.
又，圖7(b)係孔圖案之例示。 Further, Fig. 7(b) shows an example of a hole pattern.
此處，包含中央之透光部之孔部H(例如孔直徑為2μm~20μm左右)鄰接於包含半透光部之緣邊部R且被該緣邊部R包圍，進而被遮光部A包圍。此處，緣邊寬度W較佳為處於與上述線與間隙圖案相同之範圍。又，與透光部之相對向之兩條邊緣相鄰接的例如兩側之緣邊部Rl、Rr之寬度為與上述線與間隙圖案實質上相同之寬度。又，與上述線與間隙圖案同樣地，光罩面內之緣邊寬度之不均亦小。 Here, the hole portion H including the central light transmitting portion (for example, a hole diameter of about 2 μm to 20 μm) is adjacent to and surrounded by the rim portion R including the semi-transmissive portion, and is surrounded by the light shielding portion A. . Here, the rim width W is preferably in the same range as the above-described line and gap pattern. Further, for example, the widths of the edge portions R1 and Rr adjacent to the two opposite edges of the light transmitting portion are substantially the same as the width of the line and the gap pattern. Further, similarly to the above-described line and gap pattern, the unevenness of the rim width in the mask surface is small.
再者，圖7(b)所例示之孔圖案為如下形狀，即，由半透光部之緣邊部R包圍正方形之透光部之孔部H，進而由遮光部A包圍該半透光部之緣邊部R，但孔圖案並非必需為正方形，亦可為正多邊形(正六邊形、正八邊形等)或其他形狀。該情形時之直徑可設為多邊形之內徑。 Further, the hole pattern illustrated in FIG. 7(b) has a shape in which the hole portion H of the square light transmitting portion is surrounded by the edge portion R of the semi-light transmitting portion, and the semi-transparent portion is surrounded by the light shielding portion A. The edge of the portion is R, but the hole pattern does not have to be a square, and may be a regular polygon (a regular hexagon, a regular octagon, etc.) or other shapes. In this case, the diameter can be set to the inner diameter of the polygon.
又，圖7(c)係點圖案之例示。 Further, Fig. 7(c) shows an example of a dot pattern.
此處，中央之遮光部A受到半透光部之緣邊部R包圍而成之點圖案(例如直徑為2μm~20μm左右)進而被透光部包圍。此處，緣邊寬度W較佳為處於與上述線與間隙圖案相同之範圍。又，與中央之遮光 部之相對向之兩條邊緣相鄰接的例如兩側之緣邊部Rl、Rr之寬度為與上述線與間隙圖案實質上相同之寬度。又，與上述線與間隙圖案同樣地，光罩面內之緣邊寬度之不均亦小。 Here, the central light-shielding portion A is surrounded by a rim edge portion R of the semi-transmissive portion (for example, having a diameter of about 2 μm to 20 μm) and is surrounded by the light-transmitting portion. Here, the rim width W is preferably in the same range as the above-described line and gap pattern. Also, with the central shading For example, the widths of the edge portions R1 and Rr adjacent to the two edges adjacent to each other are substantially the same width as the line and gap patterns. Further, similarly to the above-described line and gap pattern, the unevenness of the rim width in the mask surface is small.
再者，圖7(c)所例示之點圖案為如下形狀，即，由半透光部之緣邊部R包圍正方形之遮光部A，進而由透光部包圍該半透光部之緣邊部R，但點圖案並非必需為正方形，亦可為正多邊形(正六邊形、正八邊形等)或其他形狀。 Further, the dot pattern illustrated in FIG. 7(c) has a shape in which the rim portion R of the semi-transmissive portion surrounds the square light-shielding portion A, and the light-transmitting portion surrounds the rim of the semi-transmissive portion. Part R, but the dot pattern is not necessarily a square, and may be a regular polygon (a regular hexagon, a regular octagon, etc.) or other shapes.
以上，將本發明之光罩所具有之轉印用圖案之具體例表示於圖7(a)~圖7(c)而進行了說明，但當然該等圖案為例示，並不限定於該等圖案。 The specific examples of the transfer pattern of the photomask of the present invention have been described with reference to FIGS. 7(a) to 7(c). However, the patterns are not limited to these. pattern.
又，於本發明之光罩所具有之轉印用圖案中，較佳為遮光部與透光部不具有直接鄰接之部分。又，當於轉印用圖案內具有包含半透光部之緣邊部以外之半透光部時，較佳為該半透光部不具有與透光部直接鄰接之部分。緣邊部以外之半透光部係依據與上述側蝕不同之形成方法而形成，當與透光部鄰接時，不易維持線寬精度。 Further, in the transfer pattern included in the photomask of the present invention, it is preferable that the light shielding portion and the light transmission portion do not have a portion directly adjacent to each other. Further, when the transfer pattern has a semi-transmissive portion other than the rim portion including the semi-transmissive portion, it is preferable that the semi-transmissive portion does not have a portion directly adjacent to the light-transmitting portion. The semi-transmissive portion other than the rim portion is formed according to a different forming method from the side etching described above, and when adjacent to the light transmitting portion, it is difficult to maintain line width accuracy.
又，本發明亦提供包含如下步驟之平面顯示器之製造方法，該步驟係指準備本發明之光罩，藉由曝光裝置將轉印用圖案轉印至被轉印體上。使用本發明所獲得之光罩而製造平面顯示器，藉此，能夠實現平面顯示器之配線圖案之微細化。 Further, the present invention also provides a method of manufacturing a flat panel display comprising the steps of preparing a photomask of the present invention, and transferring the transfer pattern onto the transfer target by an exposure device. By manufacturing a flat display using the reticle obtained by the present invention, it is possible to realize the miniaturization of the wiring pattern of the flat display.
本發明之光罩能夠藉由平面顯示器用之曝光裝置而較佳地轉印其轉印用圖案。例如，可使用等倍曝光用投影曝光裝置，該等倍曝光用投影曝光裝置具備包含i射線、h射線、g射線作為曝光之光之光源(亦稱為寬波長光源)，光學系統之數值孔徑(NA)為0.08~0.15，同調因子(σ)為0.4~0.9。或者，亦能夠使用具備上述寬波長光源之近接式曝光裝置。 The photomask of the present invention can preferably transfer its transfer pattern by an exposure device for a flat panel display. For example, a projection exposure apparatus for equal exposure can be used, and the projection exposure apparatus for the double exposure has a light source including an i-ray, an h-ray, and a g-ray as an exposure light (also referred to as a wide-wavelength light source), and a numerical aperture of the optical system. (NA) is 0.08~0.15, and the homology factor (σ) is 0.4~0.9. Alternatively, a proximity exposure apparatus having the above-described wide wavelength light source can also be used.
本發明之光罩之用途並無特別限制。例如，線與間隙圖案可較 佳地用於液晶顯示裝置之像素電極等，孔圖案、點圖案可用於液晶顯示裝置之彩色濾光片等。對於該等圖案而言，藉由具備寬度窄的半透光部之緣邊部，可使直徑或間距小之微細圖案之轉印性提高。進而，於本發明中，由於可防止由複數次之描繪引起之對準偏差，故而存在如下優點，例如可提高座標精度或可精緻地轉印微細線寬，於被轉印體上，與其他光罩之重合精度變得極其有利。 The use of the photomask of the present invention is not particularly limited. For example, the line and gap patterns can be compared It is preferably used for a pixel electrode or the like of a liquid crystal display device, and a hole pattern or a dot pattern can be used for a color filter of a liquid crystal display device or the like. In the pattern, by providing the edge portion of the semi-transmissive portion having a narrow width, the transfer property of the fine pattern having a small diameter or a small pitch can be improved. Further, in the present invention, since the alignment deviation caused by the plurality of drawing can be prevented, there are advantages such as improved coordinate accuracy or fine transfer of fine line width on the object to be transferred, and the like. The coincidence accuracy of the mask becomes extremely advantageous.
又，本發明之光罩除了包括具備上述緣邊部之線與間隙圖案等轉印用圖案之外，亦可包括其他轉印用圖案。於該情形時，為了形成其他轉印用圖案，不妨於形成本發明之轉印用圖案之前，或形成該轉印用圖案之中途，或形成該轉印用圖案之後，實施附加之其他步驟。 Moreover, the photomask of the present invention may include other transfer patterns in addition to the transfer pattern such as the line and the gap pattern including the rim portion. In this case, in order to form another transfer pattern, additional steps may be performed before forming the transfer pattern of the present invention, or during formation of the transfer pattern, or after forming the transfer pattern.
1‧‧‧透明基板 1‧‧‧Transparent substrate
2、2a、2c‧‧‧下層膜 2, 2a, 2c‧‧‧ underlayer
2b‧‧‧半透光膜 2b‧‧‧ semi-transparent film
3‧‧‧蝕刻終止膜 3‧‧‧etching stop film
3a‧‧‧蝕刻終止膜(蝕刻終止膜圖案) 3a‧‧‧etch stop film (etch stop film pattern)
4‧‧‧上層膜 4‧‧‧Upper film
4a‧‧‧上層膜圖案 4a‧‧‧Upper film pattern
4b、4c‧‧‧遮光膜圖案 4b, 4c‧‧‧ shading film pattern
5‧‧‧抗蝕膜 5‧‧‧Resist film
5a‧‧‧抗蝕圖案 5a‧‧‧resist pattern
200‧‧‧光罩基底 200‧‧‧Photomask base
300‧‧‧光罩 300‧‧‧Photomask
Rl、Rr‧‧‧緣邊部 Rl, Rr‧‧‧ edge
W‧‧‧緣邊寬度 W‧‧‧ rim width
Claims (20)
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| JP2015067785A JP6456748B2 (en) | 2015-03-28 | 2015-03-28 | Photomask manufacturing method, photomask and flat panel display manufacturing method |
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| TWI597560B true TWI597560B (en) | 2017-09-01 |
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| JP (1) | JP6456748B2 (en) |
| KR (1) | KR101821037B1 (en) |
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| JP6368000B1 (en) * | 2017-04-04 | 2018-08-01 | 株式会社エスケーエレクトロニクス | Photomask, photomask blank, and photomask manufacturing method |
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| JP3312653B2 (en) * | 1990-12-26 | 2002-08-12 | 株式会社ニコン | Photo mask |
| JP4073882B2 (en) * | 2004-03-22 | 2008-04-09 | Ｈｏｙａ株式会社 | Halftone phase shift mask blank |
| JP4490980B2 (en) * | 2007-02-16 | 2010-06-30 | クリーンサアフェイス技術株式会社 | Halftone blanks |
| JP2009258357A (en) * | 2008-04-16 | 2009-11-05 | Geomatec Co Ltd | Substrate for photomask, photomask, and method of manufacturing the same |
| JP5182029B2 (en) * | 2008-11-18 | 2013-04-10 | 大日本印刷株式会社 | Gradation mask |
| JP5588633B2 (en) | 2009-06-30 | 2014-09-10 | アルバック成膜株式会社 | Phase shift mask manufacturing method, flat panel display manufacturing method, and phase shift mask |
| JP5274393B2 (en) * | 2009-06-30 | 2013-08-28 | アルバック成膜株式会社 | Method for manufacturing halftone mask |
| JP5662032B2 (en) | 2010-02-05 | 2015-01-28 | アルバック成膜株式会社 | Mask blanks and halftone masks |
| TWI461833B (en) * | 2010-03-15 | 2014-11-21 | Hoya Corp | Multi-tone photomask, method of manufacturing a multi-tone photomask, and pattern transfer method |
| JP5605917B2 (en) * | 2011-12-27 | 2014-10-15 | Ｈｏｙａ株式会社 | Photomask manufacturing method, pattern transfer method, and flat panel display manufacturing method |
| JP6063650B2 (en) * | 2012-06-18 | 2017-01-18 | Hoya株式会社 | Photomask manufacturing method |
| KR101560385B1 (en) * | 2012-06-20 | 2015-10-26 | 알박 세이마쿠 가부시키가이샤 | Phase-shifting mask blank, and phase-shifting mask and process for producing same |
| CN104718496B (en) * | 2012-12-27 | 2019-06-28 | 爱发科成膜株式会社 | The manufacturing method of phase-shift mask |
| JP2015049282A (en) * | 2013-08-30 | 2015-03-16 | Hoya株式会社 | Photomask for manufacturing a display device, manufacturing method of photomask, pattern transfer method, and manufacturing method of display device |
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| CN106019807A (en) | 2016-10-12 |
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| KR20160115755A (en) | 2016-10-06 |
| JP2016188881A (en) | 2016-11-04 |
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| CN106019807B (en) | 2020-04-14 |
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