TWI595974B - A jet processing apparatus for processing a peripheral portion of a substrate, and a jet processing method using the apparatus - Google Patents

A jet processing apparatus for processing a peripheral portion of a substrate, and a jet processing method using the apparatus Download PDF

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TWI595974B
TWI595974B TW102130092A TW102130092A TWI595974B TW I595974 B TWI595974 B TW I595974B TW 102130092 A TW102130092 A TW 102130092A TW 102130092 A TW102130092 A TW 102130092A TW I595974 B TWI595974 B TW I595974B
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substrate
processing
moving
peripheral
nozzle
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TW201417959A (en
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Kazuyoshi Maeda
Norihito Shibuya
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Sintokogio Ltd
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L31/00Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Description

加工基板周緣部之噴射加工裝置、及使用此裝置之噴射加工方法 Injection processing device for processing peripheral portion of substrate, and jet processing method using the same
本發明係關於一種用於去除於基材之表面形成有薄膜層之基板中之該基板周緣部之薄膜層的加工裝置即噴射加工裝置、及使用此噴射加工裝置之基板之加工方法。 The present invention relates to a jet processing apparatus which is a processing apparatus for removing a thin film layer on a peripheral edge portion of a substrate on which a thin film layer is formed on a surface of a substrate, and a processing method of a substrate using the same.
於基材之表面形成薄膜層時,有基板周緣部之薄膜層之厚度較中間部厚之情況、或薄膜層到達背面之情況。 When a thin film layer is formed on the surface of the substrate, the thickness of the thin film layer at the peripheral portion of the substrate may be thicker than the intermediate portion or the thin film layer may reach the back surface.
以薄膜太陽電池板為例進行說明。薄膜太陽電池板中,透明電極層、半導體層、金屬層等積層而成之薄膜層形成於玻璃等透光性基板之表面。積層步驟例如藉由氣相反應而進行,但此時有上述薄膜層經由周緣部而到達背面之情況。太陽電池模組追求正面與背面之間之絕緣性。因此,由本案發明者等人提出有用以藉由利用噴射加工技術去除薄膜太陽電池板之周緣部之薄膜層而提高上述絕緣性之裝置。 A thin film solar panel is taken as an example for description. In the thin film solar cell, a thin film layer in which a transparent electrode layer, a semiconductor layer, a metal layer or the like is laminated is formed on the surface of a light-transmitting substrate such as glass. The lamination step is carried out, for example, by a gas phase reaction, but in this case, the film layer reaches the back surface via the peripheral portion. Solar cell modules pursue insulation between the front and back. Therefore, the inventors of the present invention have proposed an apparatus for improving the above-described insulating property by removing the film layer on the peripheral edge portion of the thin film solar cell panel by a jet processing technique.
[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]
[專利文獻1]WO2011/152073號說明書 [Patent Document 1] WO2011/152073
專利文獻1中記載之裝置可去除太陽電池板之周緣部之薄膜層。然而,於急需設置太陽電池作為環境負荷較小之發電裝置之現狀下, 追求可進一步提高生產性之加工裝置。 The device described in Patent Document 1 can remove the thin film layer at the peripheral portion of the solar cell panel. However, in the current situation where solar cells are urgently needed as a power generating device with a small environmental load, Pursuit of processing equipment that can further improve productivity.
本發明係一種噴射加工裝置,其特徵在於:其係用以於表面形成有薄膜層之基板中去除基板周緣部之薄膜層者,且包括:基板周緣部加工機構,其包含形成有將上述基板周緣部鬆弛插入之基板鬆弛插入部之基板周緣部加工室、配置為前端插入於上述基板周緣部加工室之內部並對鬆弛插入於上述基板鬆弛插入部之上述基板周緣部噴射噴射材之噴嘴、與上述噴嘴連通並配置於該噴嘴之上方之噴射材供給機構、及與上述基板周緣部加工室連通之集塵機構;基板移動旋轉機構,其包含載置上述基板並使該基板相對於上述噴嘴相對地進行水平移動且使上述基板旋轉之機構;基板搬送機構,其將上述基板搬送至上述基板移動旋轉機構之初始停止位置之上方;及升降機構,其用於使上述基板搬送機構下降而將上述基板轉置於基板移動旋轉機構。 The present invention relates to a blasting apparatus for removing a film layer on a peripheral portion of a substrate in a substrate having a film layer formed thereon, and comprising: a substrate peripheral portion processing mechanism including the substrate a peripheral edge portion processing chamber of the substrate slack insertion portion in which the peripheral edge portion is loosely inserted, a tip end is inserted into the substrate peripheral edge processing chamber, and a nozzle for ejecting the ejection material is inserted into the substrate peripheral portion of the substrate slack insertion portion. a material supply mechanism that communicates with the nozzle and is disposed above the nozzle, and a dust collecting mechanism that communicates with the processing chamber of the substrate peripheral portion; and a substrate movement rotating mechanism that mounts the substrate and makes the substrate relative to the nozzle a mechanism for horizontally moving and rotating the substrate; a substrate transfer mechanism for transporting the substrate above an initial stop position of the substrate moving and rotating mechanism; and a lifting mechanism for lowering the substrate transfer mechanism The substrate is transferred to the substrate to move the rotating mechanism.
本發明之噴射加工裝置中,使基板相對於噴嘴相對地進行水平移動之基板移動旋轉機構配置於較先前之加工裝置(於以下之說明中,只要無特別說明,則「先前之加工裝置」係指專利文獻1之加工裝置)低之位置。即,與先前之加工裝置相比,基板移動旋轉機構之重心變低,因此即便於為提高生產性而使基板之水平移動之速度上升之情形時,亦可無振動且穩定地進行移動。如上所述,根據本發明,即便於加快加工速度之情形時亦可穩定地進行噴射加工,從而可去除基板周緣部之薄膜層。 In the jet processing apparatus of the present invention, the substrate moving and rotating mechanism that horizontally moves the substrate relative to the nozzle is disposed in the previous processing apparatus (in the following description, the "previous processing apparatus" is used unless otherwise specified. Refers to the low position of the processing device of Patent Document 1. In other words, since the center of gravity of the substrate moving and rotating mechanism is lower than that of the conventional processing apparatus, even when the speed of horizontal movement of the substrate is increased in order to improve productivity, the movement can be stably performed without vibration. As described above, according to the present invention, even when the processing speed is increased, the ejection processing can be stably performed, whereby the thin film layer at the peripheral portion of the substrate can be removed.
又,本發明之噴射加工裝置之特徵在於,上述噴嘴為藉由於該噴嘴內部產生之抽吸力而抽吸噴射材之構造者。 Further, the jet processing apparatus of the present invention is characterized in that the nozzle is a structure that sucks the material by the suction force generated inside the nozzle.
本發明之噴射加工裝置與先前之加工裝置相比,噴嘴配置於較低之位置,因此噴嘴與噴射材供給機構之間之距離變長,故而抽吸噴射材之抽吸力變小。即,自噴射噴嘴噴射氣固兩相流之噴射力相對地 變大,因此加工能力提高。 Since the jet processing apparatus of the present invention has a nozzle disposed at a lower position than the conventional processing apparatus, the distance between the nozzle and the material supply mechanism becomes long, and the suction force of the suction material is reduced. That is, the ejection force of the gas-solid two-phase flow from the injection nozzle is relatively It becomes larger, so the processing capacity is improved.
又,本發明之噴射加工裝置之特徵亦可在於,上述噴嘴為如下構造者:包含噴射壓縮空氣之空氣噴嘴、設有供給噴射材之噴射材供給路徑且於內部設有與上述供給路徑連通之混合室之噴嘴座、及與上述混合室連通並且設於上述空氣噴嘴之延長方向之噴射噴嘴;且藉由於上述混合室內產生之抽吸力而抽吸噴射材。 Further, the jet processing apparatus according to the present invention may be characterized in that the nozzle includes an air nozzle that ejects compressed air, an injection material supply path that supplies a supply material, and is internally provided in communication with the supply path. a nozzle holder of the mixing chamber, and an injection nozzle that communicates with the mixing chamber and is provided in an extending direction of the air nozzle; and the injection material is sucked by the suction force generated in the mixing chamber.
本發明之構造之噴嘴為如下構造:藉由自空氣噴嘴噴射之壓縮空氣而於噴嘴座內之混合室內產生負壓,藉由該負壓而將噴射材抽吸至混合室,於該混合室形成氣固兩相流,並自噴射噴嘴噴射該氣固兩相流。該噴嘴可連續噴射噴射材,因此生產性較好。 The nozzle of the configuration of the present invention is configured to generate a negative pressure in a mixing chamber in the nozzle holder by the compressed air injected from the air nozzle, and suction the material into the mixing chamber by the negative pressure, in the mixing chamber A gas-solid two-phase flow is formed and the gas-solid two-phase flow is injected from the injection nozzle. The nozzle can continuously eject the spray material, and thus the productivity is good.
又,於本發明記載之噴射加工裝置中,上述噴射材供給機構亦可進而包含用於將預先設定之量之噴射材連續供給至上述噴嘴之定量供給機構。由此可進行穩定之噴射加工,因此不會由於加工不足而產生不良品。 Further, in the jet processing apparatus according to the present invention, the injection material supply mechanism may further include a quantitative supply mechanism for continuously supplying a predetermined amount of the injection material to the nozzle. This makes it possible to perform stable jet processing, so that defective products are not generated due to insufficient processing.
又,於本發明記載之噴射加工裝置中,亦可進而包括鄰接於上述基板周緣部加工機構之清潔機構。 Further, in the jet processing apparatus according to the present invention, the cleaning mechanism adjacent to the peripheral portion processing mechanism of the substrate may be further included.
由此,即便藉由基板周緣部加工機構未抽吸幹凈而於基板表面附著有噴射材,亦可藉由上述清潔機構予以去除。 Thereby, even if the injection material is adhered to the surface of the substrate by the substrate peripheral edge processing means, the cleaning means can be removed by the cleaning means.
又,於本發明記載之噴射加工裝置中之上述清潔機構亦可包含:與上述基板之表面不接觸地對向配置、且下端開口之殼體;前端插入於上述殼體之內部而配置,並向上述基板噴射壓縮空氣之清潔噴嘴;及設於上述殼體、並與集塵機構連通之抽吸構件。藉由自上述清潔噴嘴噴射之壓縮空氣而使附著於基板表面之含有噴射材之微粉末剝離。剝離之微粉末漂浮於殼體內之空間。抽吸構件與抽吸機構連結,藉由該抽吸機構對殼體內之空間進行抽吸。藉此,可去除附著(殘留)於基板表面之噴射材。 Further, in the blasting apparatus according to the present invention, the cleaning mechanism may include a housing that is disposed opposite to the surface of the substrate and that is open at a lower end; the front end is inserted into the inside of the housing, and a cleaning nozzle that injects compressed air onto the substrate; and a suction member that is disposed in the casing and communicates with the dust collecting mechanism. The fine powder containing the spray material adhering to the surface of the substrate is peeled off by the compressed air jetted from the cleaning nozzle. The stripped fine powder floats in the space inside the casing. The suction member is coupled to the suction mechanism, and the suction mechanism abuts the space in the housing. Thereby, the spray material adhering (residual) to the surface of the substrate can be removed.
又,於本發明記載之噴射加工裝置中,亦可進而包括自外側包圍上述基板周緣部加工機構、上述基板移動旋轉機構、及上述基板搬送機構之框體。上述基板搬送機構亦可進而具備:將上述基板搬入上述框體內之功能、及將去除上述基板周緣部之薄膜層後之基板搬出至上述框體之外部之功能。由此,與先前之加工裝置相比基板搬送機構變少,因此可廉價地製造裝置。 Moreover, the blasting apparatus according to the present invention may further include a housing that surrounds the substrate peripheral portion processing mechanism, the substrate movement rotating mechanism, and the substrate transfer mechanism from the outside. Further, the substrate transfer mechanism may further include a function of loading the substrate into the casing and a function of transporting the substrate from which the thin film layer of the peripheral portion of the substrate is removed to the outside of the casing. As a result, the substrate transfer mechanism is reduced as compared with the conventional processing device, so that the device can be manufactured at low cost.
又,於本發明記載之噴射加工裝置中,亦可進而包括用於使被搬送至上述基板移動旋轉機構之上方之基板於特定之位置停止之定位機構。藉由此種定位機構而可精度良好地加工上述基板。 Moreover, the blasting apparatus according to the present invention may further include a positioning mechanism for stopping the substrate conveyed above the substrate moving and rotating mechanism at a specific position. The substrate can be processed with high precision by such a positioning mechanism.
又,於本發明記載之噴射加工裝置中,亦可包括一對上述基板周緣部加工機構,該基板周緣部加工機構係使各自之上述基板鬆弛插入部彼此相向且隔開特定之間隔而配置。由於可同時加工上述基板之彼此平行地對向之兩邊之基板周緣部,故而可縮短加工時間。 Further, in the jet processing apparatus according to the present invention, the pair of substrate peripheral portion processing mechanisms may be disposed, and the substrate peripheral portion processing means may be disposed such that the substrate slack insertion portions are opposed to each other with a predetermined interval therebetween. Since the peripheral portion of the substrate on both sides of the substrate parallel to each other can be simultaneously processed, the processing time can be shortened.
又,於本發明記載之噴射加工裝置中,亦可配置有基板中間部加工機構,該基板中間部加工機構包含:與上述基板之表面對向地配置且下端開口之飛散防止罩、配置為前端插入於上述飛散防止罩之內部並對除上述基板周緣部以外之部分噴射噴射材之噴嘴、及設於上述飛散防止罩並與上述集塵機構連結之抽吸構件。飛散防止罩與集塵機構藉由抽吸構件而連通。藉由自噴嘴噴射出之噴射材而去除除基板周緣部以外之部位(基板中間部)之薄膜層。噴射材或微粒子(由於與被去除之薄膜層或基板碰撞而成為無法再使用之大小之噴射材)等粉塵於飛散防止罩內由集塵機構抽吸。如此,可藉由該基板中間部加工機構而去除基板之內側之薄膜層。藉由自經該基板中間部加工機構去除之部分之中心切斷該基板,而可獲得複數片經去除周緣部之基板。 Further, in the blast processing apparatus according to the present invention, a substrate intermediate portion processing mechanism may be disposed, and the substrate intermediate portion processing mechanism includes a scattering prevention cover that is disposed opposite to the surface of the substrate and has a lower end opening, and is disposed at the front end a nozzle that is inserted into the scattering prevention cover and that ejects the injection material from a portion other than the peripheral edge portion of the substrate, and a suction member that is provided in the scattering prevention cover and that is coupled to the dust collecting mechanism. The scattering prevention cover and the dust collecting mechanism communicate by the suction member. The film layer of the portion other than the peripheral edge portion of the substrate (the intermediate portion of the substrate) is removed by the spray material ejected from the nozzle. Dust such as a spray material or fine particles (a spray material of a size that cannot be reused due to collision with the removed film layer or substrate) is sucked by the dust collecting means in the scattering prevention cover. In this manner, the film layer on the inner side of the substrate can be removed by the intermediate portion processing mechanism of the substrate. By cutting the substrate from the center of the portion removed by the substrate intermediate processing mechanism, a plurality of substrates having the peripheral portion removed can be obtained.
又,於本發明記載之噴射加工裝置中,藉由上述噴射加工裝置進行加工之基板亦可為於透光性基材(玻璃或樹脂(例如聚對苯二甲酸 乙二酯樹脂)等)之平面上積層有用於形成薄膜太陽電池板之薄膜層(透明電極層、光半導體層、金屬層等)的薄膜太陽電池板。藉由本發明之噴射加工裝置,可獲得正面與背面之絕緣特性優異之太陽電池板。 Further, in the jet processing apparatus according to the present invention, the substrate processed by the jet processing apparatus may be a light-transmitting substrate (glass or resin (for example, polyterephthalic acid). A thin film solar cell layer for forming a thin film layer (a transparent electrode layer, a photo-semiconductor layer, a metal layer, or the like) of a thin film solar cell panel is laminated on a plane of an ethylenediester resin or the like. According to the blast processing apparatus of the present invention, a solar cell panel having excellent insulation properties on the front side and the back side can be obtained.
又,本發明係一種噴射加工方法,其特徵在於:其係用於藉由噴射加工裝置而去除基板周緣部之薄膜層者,且包括:藉由上述基板搬送機構將上述基板搬送至上述基板移動旋轉機構之上方之步驟;用於使被搬送至上述基板移動旋轉機構之上方之基板於特定之位置停止之定位步驟;將上述基板搬送機構下降而將上述基板轉置於上述基板移動旋轉機構,並且將該基板固定於基板移動旋轉機構之步驟;將上述基板移動旋轉機構水平移動而將上述基板周緣部之至少一邊鬆弛插入於上述基板周緣部加工機構之基板鬆弛插入部之步驟;及一邊使上述基板移動旋轉機構進一步水平移動一邊自上述噴嘴噴射噴射材,而去除鬆弛插入於上述基板鬆弛插入部之上述基板周緣部之薄膜層,並且藉由上述集塵機構抽吸該噴射材之步驟。 Moreover, the present invention is directed to a jet processing method for removing a thin film layer on a peripheral portion of a substrate by a jet processing apparatus, and comprising: transporting the substrate to the substrate by the substrate transfer mechanism a step of positioning the substrate above the rotating mechanism to stop at a specific position; and lowering the substrate transfer mechanism to transfer the substrate to the substrate moving and rotating mechanism And a step of fixing the substrate to the substrate moving and rotating mechanism; and horizontally moving the substrate moving and rotating mechanism to loosely insert at least one side of the peripheral edge portion of the substrate into the substrate slack insertion portion of the substrate peripheral portion processing mechanism; The substrate moving and rotating mechanism further ejects the ejecting material from the nozzle while horizontally moving, and removes a film layer that is loosely inserted into the peripheral edge portion of the substrate in the substrate slack insertion portion, and sucks the ejecting material by the dust collecting mechanism.
又,於本發明記載之噴射加工方法中,亦可進而包括:於去除上述基板周緣部之至少一邊之薄膜層後,藉由上述基板移動旋轉機構使該基板旋轉90度之步驟;將上述基板移動旋轉機構移動而將上述基板之與經去除薄膜層之周緣部之邊鄰接之至少一邊分別鬆弛插入於上述基板鬆弛插入部之步驟;及一邊將上述基板移動旋轉機構進一步水平移動一邊自上述噴嘴噴射噴射材,而去除鬆弛插入於該基板鬆弛插入部之周緣部之薄膜層,並且藉由上述集塵機構抽吸該噴射材之步驟。 Further, the blasting method according to the present invention may further include the step of rotating the substrate by 90 degrees by the substrate moving and rotating mechanism after removing the film layer on at least one side of the peripheral portion of the substrate; Moving the rotating mechanism to move at least one side adjacent to a side of the peripheral edge portion of the removed film layer to the substrate slack insertion portion; and moving the substrate moving and rotating mechanism further horizontally from the nozzle The ejecting material is ejected, and the step of relaxing the film layer inserted in the peripheral portion of the slack insertion portion of the substrate and sucking the ejecting material by the dust collecting mechanism is removed.
根據本發明之噴射加工方法,使基板相對於噴嘴相對地進行水平移動之基板移動旋轉機構配置於較先前之加工裝置低之位置。即,基板移動旋轉機構之重心變低,因此即便於為提高生產性而使基板之水平移動之速度上升之情形時,亦可無振動且穩定地進行移動。如上所述,根據本發明,即便於加快加工速度之情形時亦可穩定地進行噴 射加工,從而可去除基板周緣部之薄膜層。 According to the blasting method of the present invention, the substrate moving and rotating mechanism that relatively moves the substrate relative to the nozzle is disposed at a position lower than that of the previous processing apparatus. In other words, since the center of gravity of the substrate moving and rotating mechanism is lowered, even when the speed of horizontal movement of the substrate is increased in order to improve productivity, the movement can be stably performed without vibration. As described above, according to the present invention, it is possible to stably perform the spraying even in the case of accelerating the processing speed. The film is processed so that the film layer on the peripheral portion of the substrate can be removed.
又,本發明係一種噴射加工方法,其特徵在於:其係用於藉由噴射加工裝置而去除基板周緣部之薄膜層者,且包括:將上述基板搬送至上述基板移動旋轉機構之上方之步驟;用於使經上述基板搬送機構搬送至基板移動旋轉機構之上方之基板於特定之位置停止之定位步驟;將上述基板搬送機構下降而將上述基板轉置於上述基板移動旋轉機構,並且將該基板固定於基板移動旋轉機構之步驟;將上述基板移動旋轉機構水平移動而將上述基板之作為相對向之周緣部之第一加工邊分別鬆弛插入於上述基板鬆弛插入部之步驟;一邊將上述基板移動旋轉機構進一步水平移動一邊自上述噴嘴噴射噴射材,而去除上述第一加工邊之薄膜層,並且藉由上述集塵機構抽吸於上述基板周緣部加工機構之內部產生之粉塵之步驟。 Moreover, the present invention is directed to a jet processing method for removing a film layer on a peripheral portion of a substrate by a jet processing apparatus, and comprising: transferring the substrate to the substrate moving rotating mechanism a positioning step for stopping the substrate conveyed by the substrate transfer mechanism to the upper side of the substrate moving and rotating mechanism at a specific position; lowering the substrate transfer mechanism to transfer the substrate to the substrate moving and rotating mechanism, and a step of fixing the substrate to the substrate moving and rotating mechanism; and horizontally moving the substrate moving and rotating mechanism to loosen and insert the first processed side of the substrate as a peripheral edge portion into the substrate slack insertion portion; The moving rotary mechanism further moves the ejection material from the nozzle to remove the thin film layer of the first processed side, and the dust collecting means sucks the dust generated inside the peripheral processing portion of the substrate.
又,亦可進而包括:藉由上述基板移動旋轉機構使經去除上述第一加工邊之薄膜層之基板旋轉90度之步驟;將上述基板移動旋轉機構水平移動而將與第一加工邊鄰接之第二加工邊分別鬆弛插入於上述基板周緣部加工機構之基板鬆弛插入部之步驟;一邊將上述基板移動旋轉機構進一步水平移動一邊自上述噴嘴噴射噴射材,而去除上述第二加工邊之薄膜層,並且藉由上述集塵機構抽吸於上述基板周緣部加工機構之內部產生之粉塵之步驟。由於可同時去除相對向且平行之兩邊之周緣部之不需要的薄膜層,故而可短時間內去除基板周緣部之薄膜層。 Furthermore, the method further includes: a step of rotating the substrate on which the thin film layer of the first processed side is removed by the substrate moving and rotating mechanism by 90 degrees; and moving the substrate moving rotating mechanism horizontally to be adjacent to the first processed edge a step of loosely inserting the second processed side into the substrate slack insertion portion of the substrate peripheral portion processing means; and ejecting the spray material from the nozzle while moving the substrate moving and rotating mechanism to remove the film layer of the second processed side And the step of sucking dust generated inside the peripheral processing portion of the substrate by the dust collecting mechanism. Since the unnecessary film layer on the peripheral edge portions of the opposite and parallel sides can be simultaneously removed, the film layer on the peripheral edge portion of the substrate can be removed in a short time.
根據本發明,可獲得與先前之加工裝置相比加工時間較短且生產性提高之噴射加工裝置及噴射加工方法。 According to the present invention, it is possible to obtain an injection processing apparatus and an injection processing method which are shorter in processing time and more productive than conventional processing apparatuses.
10‧‧‧噴射加工裝置 10‧‧‧Jet processing equipment
11‧‧‧框體 11‧‧‧ frame
11a‧‧‧基板搬入口 11a‧‧‧Substrate entrance
11b‧‧‧基板搬出口 11b‧‧‧Substrate removal
12‧‧‧基板周緣部加工機構 12‧‧‧The peripheral processing part of the substrate
12a‧‧‧上部殼體 12a‧‧‧Upper casing
12b‧‧‧下部殼體 12b‧‧‧ Lower housing
12c‧‧‧抽吸構件 12c‧‧‧ suction member
12d‧‧‧間隔件 12d‧‧‧ spacers
12e‧‧‧基板鬆弛插入部 12e‧‧‧Substrate slack insertion
12f‧‧‧噴嘴固定構件 12f‧‧‧Nozzle fixing member
13‧‧‧清潔機構 13‧‧‧ Cleaning institutions
13a‧‧‧殼體 13a‧‧‧Shell
13b‧‧‧清潔噴嘴 13b‧‧‧Clean nozzle
13c‧‧‧抽吸構件 13c‧‧‧ suction member
14‧‧‧基板搬送機構 14‧‧‧Substrate transport mechanism
14a‧‧‧搬送輥 14a‧‧‧Transport roller
14b‧‧‧架台 14b‧‧‧Rack
14c‧‧‧輥構件 14c‧‧‧roller components
14d‧‧‧軸 14d‧‧‧Axis
14e‧‧‧軸承 14e‧‧‧ bearing
15‧‧‧升降機構 15‧‧‧ Lifting mechanism
16‧‧‧定位機構 16‧‧‧ Positioning agency
16a‧‧‧第一固定構件 16a‧‧‧First fixed component
16b‧‧‧第二固定構件 16b‧‧‧Second fixed component
16c‧‧‧調整構件 16c‧‧‧Adjusting components
16d‧‧‧調整機構 16d‧‧‧Adjustment agency
17‧‧‧基板移動旋轉機構 17‧‧‧Substrate moving rotating mechanism
17a‧‧‧載置台 17a‧‧‧ mounting table
17b‧‧‧移行機構 17b‧‧‧Transition agency
17c‧‧‧轉動機構 17c‧‧‧Rotating mechanism
18‧‧‧噴射材供給機構 18‧‧‧Spray material supply mechanism
18a‧‧‧料斗 18a‧‧‧ hopper
18b‧‧‧定量供給機構 18b‧‧‧Quantitative supply agency
19‧‧‧基板中間部加工機構 19‧‧‧Substrate intermediate processing mechanism
19a‧‧‧飛散防止罩 19a‧‧‧Diffuse prevention cover
19b‧‧‧噴嘴 19b‧‧‧Nozzles
19c‧‧‧抽吸構件 19c‧‧‧ suction member
F1、F2‧‧‧凸緣部 F 1 , F 2 ‧‧‧Flange
H‧‧‧軟管 H‧‧‧Hose
M‧‧‧加工區域 M‧‧‧Processing area
N‧‧‧噴嘴 N‧‧‧ nozzle
Na‧‧‧空氣噴嘴 Na‧‧ Air nozzle
Nb‧‧‧噴射噴嘴 Nb‧‧·jet nozzle
Nc‧‧‧噴嘴座 Nc‧‧‧ nozzle holder
Nd‧‧‧噴射材供給路徑 Nd‧‧‧Spray supply path
Ne‧‧‧混合室 Ne‧‧‧Mixed room
S‧‧‧基板 S‧‧‧Substrate
S'‧‧‧(切斷後之)基板 S'‧‧‧ (cut) substrate
U‧‧‧基板周緣部加工單元 U‧‧‧Surface peripheral processing unit
U'‧‧‧基板中間部加工單元 U'‧‧‧Substrate intermediate processing unit
圖1係對本發明之第一實施形態進行說明之說明圖。圖1(A)為俯 視剖面圖,圖1(B)為前視剖面圖。 Fig. 1 is an explanatory view for explaining a first embodiment of the present invention. Figure 1 (A) is a bow Referring to the cross-sectional view, Fig. 1(B) is a front cross-sectional view.
圖2係表示本發明之第一實施形態中之基板周緣部加工機構之說明圖。圖2(A)為側視圖,圖2(B)為俯視圖,圖2(C)為用於對基板周緣部加工機構之構成進行說明之模式圖,圖2(D)為圖2(B)之縱剖面圖。 Fig. 2 is an explanatory view showing a peripheral portion processing mechanism of a substrate in the first embodiment of the present invention. 2(A) is a side view, FIG. 2(B) is a plan view, and FIG. 2(C) is a schematic view for explaining a configuration of a substrate peripheral portion processing mechanism, and FIG. 2(D) is FIG. 2(B) Longitudinal section view.
圖3係表示本發明之第一實施形態中之噴嘴之說明圖。圖3(A)為前視圖,圖3(B)為圖3(A)中之A-A剖面圖。 Fig. 3 is an explanatory view showing a nozzle in the first embodiment of the present invention. Fig. 3(A) is a front view, and Fig. 3(B) is a cross-sectional view taken along line A-A of Fig. 3(A).
圖4係對本發明之第一實施形態中之清潔機構進行說明之前視剖面圖。 Fig. 4 is a front cross-sectional view showing the cleaning mechanism in the first embodiment of the present invention.
圖5係用於對本發明之第一實施形態中之加工基板之步驟進行說明之說明圖。圖5(A)係表示步驟1之自前視方向觀察之剖面圖,圖5(B)係表示步驟2之自前視方向觀察之剖面圖。 Fig. 5 is an explanatory view for explaining a procedure of processing a substrate in the first embodiment of the present invention. Fig. 5(A) is a cross-sectional view of the step 1 as viewed from the front view, and Fig. 5(B) is a cross-sectional view of the step 2 as viewed from the front view.
圖6係用於對本發明之第一實施形態中之加工基板之步驟進行說明之說明圖。圖6(A)係表示步驟3之自前視方向觀察之剖面圖,圖6(B)係表示步驟4之自前視方向觀察之剖面圖。 Fig. 6 is an explanatory view for explaining a procedure of processing a substrate in the first embodiment of the present invention. Fig. 6(A) is a cross-sectional view showing the step 3 in a front view direction, and Fig. 6(B) is a cross-sectional view showing the step 4 in a front view direction.
圖7係用於對本發明之第一實施形態中之加工基板之步驟進行說明之說明圖。圖7(A)係表示步驟5之自前視方向觀察之剖面圖,圖7(B)係表示步驟6之自前視方向觀察之剖面圖。 Fig. 7 is an explanatory view for explaining a procedure of processing a substrate in the first embodiment of the present invention. Fig. 7(A) is a cross-sectional view of the step 5 as viewed from the front view, and Fig. 7(B) is a cross-sectional view of the step 6 as viewed from the front view.
圖8係表示本發明之第二實施形態中之基板中間部加工機構之說明圖。圖8(A)係對基板中間部加工機構進行說明之前視剖面圖,圖8(B)係對配置有基板中間部加工機構之噴射加工裝置進行說明之俯視剖面圖。 Fig. 8 is an explanatory view showing a substrate intermediate portion processing mechanism in a second embodiment of the present invention. 8(A) is a front cross-sectional view showing a substrate intermediate portion processing mechanism, and FIG. 8(B) is a plan cross-sectional view for explaining a jet processing device in which a substrate intermediate portion processing mechanism is disposed.
圖9(A)~(D)係對藉由本發明之第二實施形態之噴射加工裝置加工之基板之狀態進行說明之說明圖。 9(A) to 9(D) are explanatory views for explaining a state of a substrate processed by the jet processing apparatus according to the second embodiment of the present invention.
參照圖對本發明之噴射加工裝置之一例進行說明。又,只要無特別說明,實施形態之說明中之「上下左右方向」係指圖中之方向。 An example of the jet processing apparatus of the present invention will be described with reference to the drawings. In addition, unless otherwise indicated, the "up-and-down direction" in the description of an embodiment means the direction in the figure.
如圖1(A)及圖1(B)所示,第一實施形態之噴射加工裝置10具備:一對基板周緣部加工單元U、基板搬送機構14、升降機構15、定位機構16、基板移動旋轉機構17、噴射材供給機構18、自外側將其等包圍之框體11、及控制該等機構等之動作之控制器件(未圖示)。基板周緣部加工單元U包括基板周緣部加工機構12、及與該基板周緣部加工機構12之左右(基板S之行進方向)鄰接之清潔機構13。又,於框體11上,於該圖之上部及下部之壁面,分別形成有用於將基板S搬入噴射加工裝置10內之開口部即基板搬入口11a、及用於將噴射加工結束之基板S自噴射加工裝置10搬出之開口部即基板搬出口11b。 As shown in Fig. 1 (A) and Fig. 1 (B), the jet processing apparatus 10 of the first embodiment includes a pair of substrate peripheral portion processing unit U, a substrate transfer mechanism 14, a lifting mechanism 15, a positioning mechanism 16, and substrate movement. The rotating mechanism 17, the injection material supply mechanism 18, the casing 11 that surrounds the same from the outside, and a control device (not shown) that controls the operations of the mechanisms and the like. The substrate peripheral portion processing unit U includes a substrate peripheral portion processing mechanism 12 and a cleaning mechanism 13 adjacent to the left and right (the traveling direction of the substrate S) of the substrate peripheral portion processing mechanism 12. Further, on the frame body 11, on the wall surfaces of the upper portion and the lower portion of the drawing, a substrate loading port 11a for opening the substrate S into the jet processing apparatus 10, and a substrate S for ending the ejection process are formed. The substrate transfer port 11b which is an opening which is ejected from the jet processing apparatus 10.
如圖2所示,基板周緣部加工機構12具備基板周緣部加工室、及向基板S噴射噴射材之噴嘴N,上述基板周緣部加工室具備底面開放之箱體即上部殼體12a、上表面開放且橫截面之截面積自上端部朝向下方而縮小之中空之下部殼體12b、與上述下部殼體12b之底部連結之中空之抽吸構件12c、及用於將上述上部殼體12a與上述下部殼體12b隔開間隔地連結之間隔件12d。上部殼體12a之下端面與下部殼體12b之上端面形狀相同,並隔開配置。 As shown in Fig. 2, the substrate peripheral portion processing mechanism 12 includes a substrate peripheral portion processing chamber and a nozzle N that ejects a spray material onto the substrate S. The substrate peripheral portion processing chamber includes an upper casing 12a and an upper surface, which are open to the bottom surface. a hollow lower casing 12b that is open and has a cross-sectional area that is reduced from the upper end portion toward the lower side, a hollow suction member 12c coupled to the bottom of the lower casing 12b, and the upper casing 12a and the above The lower casing 12b is spaced apart from the spacer 12d. The lower end surface of the upper casing 12a has the same shape as the upper end surface of the lower casing 12b, and is disposed apart from each other.
於上部殼體12a之下端及下部殼體12b之上端,分別設有字狀且形狀大致相同之凸緣部F1、F2。又,上述間隔件12d之上端面及下端面與上述凸緣F1、F2形狀大致相同。藉由經由上述間隔件12d將上述凸緣F1、F2連結,而將上部殼體12a與下部殼體12b連結,並且形成供基板S之周緣部鬆弛插入之基板鬆弛插入部12e。上述基板鬆弛插入部12e之間隔(圖2(A)之上下方向之長度)必須以於鬆弛插入基板S時,在基板S與開口端之間至少形成上下方向之適度之間隙的方式進行選擇。即,使基板S不與基板鬆弛插入部接觸。若間隙過小,則有基板S與開口端接觸,而基板S受損之虞。若間隙過大,則抽吸外部空氣之風速變小,因此無法充分抽吸粉塵(自噴嘴N噴射之噴射材及由於噴射 材碰撞基板S而產生之基板S之切削粉等微粒子)。其結果,該粉塵向基板周緣部加工機構12外漏出。上述基板鬆弛插入部12e之間隔由間隔件12d之厚度決定,因此可根據基板S之厚度適當地選擇該間隔件12d之厚度。於本實施形態中,以基板S之正面及背面、與上述基板鬆弛插入部12e之端面之間隔為1.0~5.0mm之方式選擇間隔件。 The lower end of the upper housing 12a and the upper end of the lower housing 12b are respectively provided The flange portions F 1 and F 2 having substantially the same shape and shape. And, on the spacer 12d and the lower end surface of the end face of the flange F 1, F 2 is substantially the same shape. By connecting the flanges F 1 and F 2 via the spacer 12d, the upper casing 12a and the lower casing 12b are coupled to each other, and the substrate slack insertion portion 12e for loosely inserting the peripheral portion of the substrate S is formed. The interval between the substrate slack insertion portions 12e (the length in the upper and lower directions in FIG. 2(A)) must be selected such that at least a proper gap in the vertical direction is formed between the substrate S and the open end when the substrate S is loosely inserted. That is, the substrate S is not brought into contact with the substrate slack insertion portion. If the gap is too small, the substrate S is in contact with the open end, and the substrate S is damaged. When the gap is too large, the wind speed of the suction outside air is small, so that it is not possible to sufficiently suck the dust (the particles ejected from the nozzle N and the fine particles such as the cutting powder of the substrate S generated by the collision of the material with the substrate S). As a result, the dust leaks to the outside of the substrate peripheral portion processing mechanism 12. Since the interval between the substrate slack insertion portions 12e is determined by the thickness of the spacer 12d, the thickness of the spacer 12d can be appropriately selected in accordance with the thickness of the substrate S. In the present embodiment, the spacer is selected such that the distance between the front surface and the back surface of the substrate S and the end surface of the substrate slack insertion portion 12e is 1.0 to 5.0 mm.
噴嘴N係使下端即噴射口插入於上述上部殼體12a之內部而固定。又,於抽吸構件12c連結有用於抽吸並回收於基板周緣部加工機構12之內部產生之粉塵之集塵機構(未圖示)。粉塵係經由抽吸構件12c藉由上述集塵機構抽吸並回收。藉由上述集塵機構之抽吸力而自上述基板鬆弛插入部12e抽吸外部空氣,因此於該基板鬆弛插入部12e附近產生自外部向內部流動之氣流。藉此,粉塵不會自該基板鬆弛插入部12e向基板周緣部加工機構12之外部漏出。 In the nozzle N, the lower end, that is, the injection port, is inserted into the upper casing 12a and fixed. Further, a dust collecting means (not shown) for sucking and collecting dust generated inside the peripheral portion processing means 12 of the substrate is connected to the suction member 12c. The dust is sucked and recovered by the dust collecting means via the suction member 12c. The outside air is sucked from the substrate slack insertion portion 12e by the suction force of the dust collecting means, so that the airflow flowing from the outside to the inside is generated in the vicinity of the substrate slack insertion portion 12e. Thereby, the dust does not leak from the substrate slack insertion portion 12e to the outside of the substrate peripheral portion processing mechanism 12.
噴嘴N之噴射口之形狀並無特別限定,藉由形成為矩形並以長邊與基板S之加工邊正交之方式配置,可擴大加工區域M之寬度。於基板周緣部加工機構12之內部,產生向抽吸構件12c之方向流動之氣流,因此,藉由使噴射材自噴嘴N之噴射方向以朝向基板周緣部側之方式傾斜,而可利用抽吸構件12c效率良好地抽吸粉塵。關於該角度,使噴嘴N之中心線相對於基板S而為30~70度即可。於將噴嘴N傾斜配置之情形時,設置可將噴嘴N傾斜固定之構件即可。例如圖2所示,亦可使用具有特定角度之斜面之三角柱形狀之噴嘴固定構件12f、或五邊形等多邊形固定構件等。 The shape of the ejection opening of the nozzle N is not particularly limited, and is formed in a rectangular shape and arranged such that the long side is orthogonal to the processed side of the substrate S, whereby the width of the processing region M can be enlarged. Since the airflow flowing in the direction of the suction member 12c is generated inside the substrate peripheral portion processing mechanism 12, the ejection material can be inclined by ejecting the ejection direction from the nozzle N toward the peripheral edge portion side of the substrate. The member 12c sucks dust efficiently. Regarding this angle, the center line of the nozzle N may be 30 to 70 degrees with respect to the substrate S. In the case where the nozzle N is disposed obliquely, a member that can tilt the nozzle N is provided. For example, as shown in FIG. 2, a nozzle fixing member 12f having a triangular column shape having a specific angle of a slope, or a polygonal fixing member such as a pentagon may be used.
噴嘴N之構造並無特別限定,設為利用於噴嘴N之內部產生之負壓抽吸噴射材並且於內部與壓縮空氣混合而作為氣固兩相流自噴射口噴射之構造即可。作為具體例,如圖3所示,噴嘴N具備:用於向噴嘴N導入壓縮空氣之空氣噴嘴Na、用於噴射作為氣固兩相流之噴射材之噴射噴嘴Nb、及將上述空氣噴嘴Na自上端插入並嵌合且於下端連 結上述噴射噴嘴Nb之噴嘴座Nc。空氣噴嘴Na為兩端開口之中空形狀,且內徑朝向壓縮空氣流動之方向(圖3下方)而變小。噴射噴嘴Nb設有自上端朝向下端為相同形狀之流路截面。噴嘴座Nc之內部亦可為設有混合室Ne及與該混合室Ne連通之噴射材供給路徑(供給孔)Nd之構成。 The structure of the nozzle N is not particularly limited, and may be a structure in which the spray material is sucked by the negative pressure generated inside the nozzle N and mixed with the compressed air inside, and is injected as a gas-solid two-phase flow from the injection port. As a specific example, as shown in FIG. 3, the nozzle N includes an air nozzle Na for introducing compressed air into the nozzle N, an injection nozzle Nb for ejecting the injection material as a gas-solid two-phase flow, and the air nozzle Na Inserted and fitted from the top and connected at the bottom The nozzle holder Nc of the above-described ejection nozzle Nb is junctioned. The air nozzle Na has a hollow shape with both ends open, and the inner diameter becomes smaller toward the direction in which the compressed air flows (lower in Fig. 3). The injection nozzle Nb is provided with a flow path cross section having the same shape from the upper end toward the lower end. The inside of the nozzle holder Nc may be configured to include a mixing chamber Ne and a material supply path (supply hole) Nd that communicates with the mixing chamber Ne.
噴射材供給路徑Nd經由軟管H而與配置於噴嘴N之上方之噴射材供給機構18連結。噴射材供給機構18具備:貯存噴射材之料斗18a、及用於自該料斗連續取出(切出)特定量之定量供給機構18b。若可僅藉由料斗18a穩定地取出特定量之噴射材,則亦可不設置定量供給機構18b。定量供給機構18b可選自台式給料器(table feeder)或螺旋給料器(screw feeder)等公知之方法。於本實施形態中,使用螺旋給料器。 The shot material supply path Nd is coupled to the shot material supply mechanism 18 disposed above the nozzle N via the hose H. The shot material supply mechanism 18 includes a hopper 18a for storing the spray material, and a quantitative supply mechanism 18b for continuously taking out (cutting out) a specific amount from the hopper. If the specific amount of the spray material can be stably taken out only by the hopper 18a, the quantitative supply mechanism 18b may not be provided. The dosing mechanism 18b may be selected from known methods such as a table feeder or a screw feeder. In the present embodiment, a screw feeder is used.
於上述空氣噴嘴Na之上端,經由軟管(未圖示)而連結有壓縮空氣供給機構(未圖示)。若使該壓縮空氣供給機構作動而向噴嘴N之內部之空間即混合室Ne噴射壓縮空氣,則於混合室Ne產生負壓。自配置於噴嘴N之上方之上述噴射材供給機構18取出之噴射材藉由上述負壓而通過噴射材供給路徑Nd被抽吸至混合室Ne。所抽吸之噴射材於該混合室Ne與壓縮空氣混合,並作為氣固兩相流自噴射噴嘴Nb噴射。 A compressed air supply mechanism (not shown) is connected to the upper end of the air nozzle Na via a hose (not shown). When the compressed air supply mechanism is actuated to inject compressed air into the mixing chamber Ne, which is a space inside the nozzle N, a negative pressure is generated in the mixing chamber Ne. The injection material taken out from the above-described injection material supply mechanism 18 disposed above the nozzle N is sucked into the mixing chamber Ne by the injection material supply path Nd by the above-described negative pressure. The sucked spray material is mixed with the compressed air in the mixing chamber Ne, and is injected as a gas-solid two-phase flow from the injection nozzle Nb.
噴射噴嘴Nb之下端即噴射口之形狀可為圓形亦可為矩形。於本實施形態中,使噴射口之形狀為長方形,並以長邊位於與加工邊正交之方向之方式而配置。藉此,可加工較寬之寬度。 The shape of the lower end of the injection nozzle Nb, that is, the ejection opening, may be circular or rectangular. In the present embodiment, the shape of the ejection opening is a rectangle, and the long side is disposed so as to be orthogonal to the processing side. Thereby, a wider width can be processed.
關於將噴射材貯存於加壓罐並藉由對該加壓罐加壓而將噴射材供給至噴嘴之機構之噴射加工裝置(所謂之加壓式),可連續進行噴射加工之時間受加壓罐之容量限制。與此相對,使用本實施形態之噴嘴N之噴射加工裝置不需要上述加壓罐,而可於大氣壓下貯存噴射材並供給至噴嘴N。噴射出之噴射材可如後所述般藉由分離機構分離而再次使用(噴射)。即,可循環噴射噴射材,因此可連續進行噴射加工。 又,可藉由上述噴射材供給機構18穩定且連續地供給特定量之噴射材,因此可進行穩定之噴射加工。又,於本實施形態中,可將噴嘴N配置於較先前之噴射加工裝置低之位置,因此與先前之噴射加工裝置相比加工能力較高。自空氣噴嘴Na被供給至噴嘴N之內部之壓縮空氣之壓力被分解為自噴射噴嘴Nb之噴射力與噴射材之抽吸力之產生力。若將噴射材供給機構18配置於噴嘴N之上方,且延長該噴射材供給機構18與噴嘴N之距離,則噴射材之抽吸力變小。其結果,自噴射噴嘴Nb之噴射力增大,因此加工能力提高。 The blasting apparatus (so-called pressurized type) for storing the shot material in the pressurized tank and feeding the shot material to the nozzle by pressurizing the press tank, the time during which the jet processing can be continuously performed is pressurized The capacity of the tank is limited. On the other hand, the jet processing apparatus using the nozzle N of the present embodiment does not require the above-described pressurized tank, and can store the spray material under atmospheric pressure and supply it to the nozzle N. The ejected shot material can be reused (sprayed) by being separated by a separating mechanism as will be described later. That is, the spray material can be sprayed continuously, so that the jet processing can be continuously performed. Further, the injection material supply mechanism 18 can stably and continuously supply a specific amount of the injection material, so that stable injection processing can be performed. Further, in the present embodiment, since the nozzle N can be disposed at a position lower than that of the prior art jet processing apparatus, the processing capability can be made higher than that of the prior art jet processing apparatus. The pressure of the compressed air supplied from the air nozzle Na to the inside of the nozzle N is decomposed into the generating force of the ejection force from the ejection nozzle Nb and the suction force of the ejection material. When the shot material supply mechanism 18 is disposed above the nozzle N and the distance between the shot material supply mechanism 18 and the nozzle N is extended, the suction force of the spray material becomes small. As a result, since the ejection force from the ejection nozzle Nb is increased, the processing capability is improved.
以可良好地去除不需要之薄膜層且不損傷除此以外之部分之薄膜層之方式選擇噴射材及噴射壓力。噴射材只要為通常用於噴射加工者,則並無特別限定。例如,可選自陶瓷系之磨粒或砂粒(氧化鋁系、碳化矽系、氧化鋯系等)、金屬系之丸粒、切丸或砂粒(鐵系、不鏽鋼系、非鐵系等)、玻璃系之珠粒或粉末、樹脂系之丸粒(尼龍樹脂、三聚氰胺樹脂、脲樹脂等)、及植物系之丸粒(核桃、桃、杏等)。又,關於噴射材之粒徑,只要可無脈動等且穩定地自噴嘴N噴射即可,例如可選自0.01~0.6mm、較理想為0.02~0.06mm之範圍。噴射壓力可選自0.2~0.8MPa、較理想為0.3~0.6MPa之範圍。 The shot material and the ejection pressure are selected in such a manner that the unnecessary film layer can be well removed without damaging the film layer other than the film layer. The material to be sprayed is not particularly limited as long as it is generally used for jet processing. For example, it may be selected from ceramic-based abrasive grains or sand grains (alumina type, tantalum carbide type, zirconia type, etc.), metal type pellets, cut pellets or sand grains (iron type, stainless steel type, non-ferrous type, etc.), Glass-based beads or powders, resin-based pellets (nylon resin, melamine resin, urea resin, etc.), and plant-based pellets (walnut, peach, apricot, etc.). In addition, the particle diameter of the material to be sprayed may be stably injected from the nozzle N without pulsation or the like, and may be, for example, selected from the range of 0.01 to 0.6 mm, preferably 0.02 to 0.06 mm. The injection pressure may be selected from the range of 0.2 to 0.8 MPa, preferably 0.3 to 0.6 MPa.
以供基板S之相對向之兩邊(圖1(A)中之上下之邊)鬆弛插入之方式配置有兩台該基板周緣部加工機構12。具體而言,基板周緣部加工機構12之基板鬆弛插入部12e以彼此相對之方式配置。於基板周緣部加工機構12,連結有用於配合基板S之尺寸而調整基板周緣部加工機構12彼此之間隔之間隔調整機構(未圖示),可藉由該間隔調整機構使基板周緣部加工機構12沿圖1(A)之上下方向移動。 Two of the substrate peripheral portion processing mechanisms 12 are disposed so that the opposite sides (the upper and lower sides in FIG. 1(A)) of the substrate S are loosely inserted. Specifically, the substrate slack insertion portions 12e of the substrate peripheral portion processing mechanism 12 are disposed to face each other. An interval adjusting mechanism (not shown) for adjusting the interval between the peripheral edge portion processing mechanisms 12 of the substrate is coupled to the substrate peripheral portion processing mechanism 12, and the peripheral peripheral portion processing mechanism can be formed by the interval adjusting mechanism. 12 moves in the up and down direction of Fig. 1(A).
使用圖4進一步對與基板周緣部加工機構12連結之清潔機構13進行說明。於圖4中,基板S之行進方向為左右方向。清潔機構13具備:下端開口之箱體即殼體13a、配置於頂面之中央部之清潔噴嘴13b、及 兩端開口之圓筒形狀之抽吸構件13c。清潔噴嘴13b與上述壓縮空氣供給機構連結,下端(前端)即噴射口插入於上述殼體13a之內部而固定。上述抽吸構件13c以其一端位於上述清潔噴嘴13b之左右(即,基板S之行進方向)之方式與上述殼體13a之頂面連結,另一端經由軟管而與集塵機構連結。藉此,上述殼體13a之內側空間與集塵機構連通。 The cleaning mechanism 13 coupled to the peripheral edge portion processing mechanism 12 will be further described with reference to Fig. 4 . In FIG. 4, the traveling direction of the substrate S is the left-right direction. The cleaning mechanism 13 includes a casing 13a that is a casing that is open at the lower end, a cleaning nozzle 13b that is disposed at a central portion of the top surface, and A cylindrical suction member 13c that is open at both ends. The cleaning nozzle 13b is coupled to the compressed air supply mechanism, and the lower end (front end), that is, the injection port, is inserted into the casing 13a and fixed. The suction member 13c is connected to the top surface of the casing 13a so that one end thereof is located on the left and right sides of the cleaning nozzle 13b (that is, the traveling direction of the substrate S), and the other end is coupled to the dust collecting mechanism via a hose. Thereby, the inner space of the casing 13a communicates with the dust collecting means.
清潔機構13係以於基板S於下方通過時在殼體13a之下端與該基板S之間形成適度之間隙之方式而配置。於附著有粉塵之基板S於清潔機構13之下方通過時,自清潔噴嘴13b向該基板S吹送壓縮空氣而使粉塵自基板S之表面脫離並升起,並且藉由利用抽吸構件13c抽吸該粉塵,而去除基板S表面之粉塵。於殼體13a之下端部附近,自設於殼體13a與基板S之間之間隙抽吸外部空氣,故而產生自該殼體13a之外側向內側流動之氣流。因此,粉塵不會向清潔機構13之外部漏出。但,若殼體13a之下端與基板S之間隙過小,則有基板S與殼體13a之下端接觸,而基板S受損之虞。若間隔過大,則抽吸外部空氣之風速變小,因此無法充分抽吸飛散於清潔機構13之內部之粉塵。其結果,該粉塵向上述清潔機構13之外部漏出。因此,上述間隙必須設定於基板S不與殼體13a接觸且無損抽吸力之範圍。於本實施形態中,以基板S之表面與上述殼體13a之下端之間隔(間隙)成為0.5~4.5mm之方式進行設定。 The cleaning mechanism 13 is disposed such that a moderate gap is formed between the lower end of the casing 13a and the substrate S when the substrate S passes below. When the substrate S to which the dust adheres passes under the cleaning mechanism 13, the self-cleaning nozzle 13b blows compressed air to the substrate S to cause the dust to be detached from the surface of the substrate S and lifted, and is sucked by the suction member 13c. The dust is removed while the dust on the surface of the substrate S is removed. In the vicinity of the lower end portion of the casing 13a, the outside air is sucked from the gap provided between the casing 13a and the substrate S, so that the airflow flowing from the outer side to the inner side of the casing 13a is generated. Therefore, the dust does not leak to the outside of the cleaning mechanism 13. However, if the gap between the lower end of the casing 13a and the substrate S is too small, the substrate S comes into contact with the lower end of the casing 13a, and the substrate S is damaged. If the interval is too large, the wind speed at which the outside air is sucked becomes small, so that the dust scattered inside the cleaning mechanism 13 cannot be sufficiently sucked. As a result, the dust leaks to the outside of the cleaning mechanism 13. Therefore, the above gap must be set in a range in which the substrate S is not in contact with the casing 13a and the suction force is not impaired. In the present embodiment, the distance (gap) between the surface of the substrate S and the lower end of the casing 13a is set to 0.5 to 4.5 mm.
為效率良好地去除附著於基板S之表面之粉塵,亦可與壓縮空氣一併地自清潔噴嘴13b噴射減弱附著力之物質(少許水分、靜電去除劑、離子或自由基等)。或者,亦可自清潔噴嘴13b吹送高速脈衝空氣(超音波鼓風)。於本實施形態中使用超音波鼓風。 In order to efficiently remove the dust adhering to the surface of the substrate S, a substance (a little water, an electrostatic remover, ions, radicals, or the like) which weakens the adhesion may be ejected from the cleaning nozzle 13b together with the compressed air. Alternatively, high-speed pulsed air (ultrasonic blast) may be blown from the cleaning nozzle 13b. Ultrasonic blast is used in the present embodiment.
清潔噴嘴13b之噴射口之形狀並無特別限定,可適當地選擇圓形或矩形等。 The shape of the ejection opening of the cleaning nozzle 13b is not particularly limited, and a circular shape, a rectangular shape, or the like can be appropriately selected.
基板搬送機構14具備:彼此等間隔且平行地排列配置之複數個搬送輥14a、及支持該搬送輥14a之架台14b。搬送輥14a具備:用於搬送基板S之輥構件14c、及成為該輥構件14c之旋轉軸之軸14d。輥構件14c除配置於最外部者以外,沿軸14d之長度方向以特定之間隔而設置。又,輥構件14c除配置於最外部者以外,以鄰接之搬送輥14a之輥構件14c相對於搬送方向(於圖1(A)中為下方向)成為鋸齒狀之方式而配置。藉由將輥構件14c配置為鋸齒狀,搬送基板S時之直行性提高。 The substrate transport mechanism 14 includes a plurality of transport rollers 14a that are arranged at equal intervals and in parallel, and a gantry 14b that supports the transport roller 14a. The conveying roller 14a includes a roller member 14c for conveying the substrate S, and a shaft 14d serving as a rotating shaft of the roller member 14c. The roller member 14c is disposed at a specific interval along the longitudinal direction of the shaft 14d except for being disposed at the outermost portion. In addition, the roller member 14c is disposed so as to be in a zigzag shape with respect to the conveyance direction (the downward direction in FIG. 1(A)) of the roller member 14c of the adjacent conveyance roller 14a. By arranging the roller member 14c in a zigzag shape, the straightness is improved when the substrate S is conveyed.
各搬送輥14a之軸14d經由軸承14e而可旋轉地支持於架台14b。又,上述軸14d與馬達等旋轉機構(未圖示)連結。藉由使上述旋轉機構旋轉而可旋轉驅動搬送輥14a(於圖1(A)中為上表面向下方向旋轉),因此可藉由輥構件14c將搬送力傳遞至基板S而進行搬送。 The shaft 14d of each of the conveying rollers 14a is rotatably supported by the gantry 14b via a bearing 14e. Further, the shaft 14d is coupled to a rotating mechanism (not shown) such as a motor. By rotating the rotation mechanism, the conveyance roller 14a can be rotationally driven (the upper surface is rotated in the downward direction in FIG. 1(A)), so that the conveyance force can be transmitted to the substrate S by the roller member 14c and conveyed.
輥構件14c中之與基板S抵接並向該基板S傳遞搬送力之抵接構件較佳為使用獨立氣泡構造之胺基甲酸酯樹脂,進而較佳為將該胺基甲酸酯樹脂之硬度設為JIS-A中50~60(於JIS K6253中之規定)左右之硬度。例如於基板S為玻璃或樹脂等易損傷之材質之情形時,若粉塵進入基板S與搬送輥14c之間,則於搬送基板S時會由於上述粉塵而損傷基板S。如上所述,若使抵接構件為獨立氣泡構造之胺基甲酸酯樹脂,則即便粉塵進入基板S與搬送輥14c之間,亦可防止將粉塵過度按壓於基板S之情況,因此可防止基板S受損。 The abutting member of the roller member 14c that abuts against the substrate S and transmits the conveying force to the substrate S is preferably a urethane resin using a closed cell structure, and further preferably the urethane resin. The hardness is set to a hardness of about 50 to 60 (specified in JIS K6253) in JIS-A. For example, when the substrate S is a easily damaged material such as glass or resin, if the dust enters between the substrate S and the transfer roller 14c, the substrate S may be damaged by the dust when the substrate S is transferred. As described above, when the contact member is a urethane resin having a closed cell structure, even if dust enters between the substrate S and the transfer roller 14c, it is possible to prevent the dust from being excessively pressed against the substrate S, thereby preventing the dust from being excessively pressed against the substrate S. The substrate S is damaged.
於架台14b連結有升降機構15,可藉由該升降機構15而使搬送輥14a升降(於圖1(A)中為相對於紙面為鉛垂方向,於圖1(B)中為上下方向)。升降機構可選自以油壓、氣壓或電氣進行驅動之缸體、具備滾珠螺桿或皮帶等之電動滑塊、齒條小齒輪等公知之方法。於本實施形態中,使用藉由氣壓進行驅動之缸體(氣缸)。 The elevating mechanism 15 is coupled to the gantry 14b, and the transporting roller 14a can be moved up and down by the elevating mechanism 15 (the vertical direction with respect to the paper surface in FIG. 1(A) and the vertical direction in FIG. 1(B)) . The elevating mechanism may be selected from a known method such as a cylinder that is driven by hydraulic pressure, air pressure, or electric power, an electric slider including a ball screw or a belt, and a rack pinion. In the present embodiment, a cylinder (cylinder) that is driven by air pressure is used.
定位機構16具備:相對於搬送之基板S而配置於搬送方向側(於圖1(A)中為下方)之第一固定構件16a、配置於與搬送方向側之邊鄰接之 一側之邊側(於圖1(A)中為左方)之第二固定構件16b、及配置於另一邊(於圖1(A)中為右方向)之調整構件16c。第一固定構件16a固定於設定基板S之下邊之位置的位置,第二固定構件16b固定於設定基板S之左邊之位置的位置。調整構件16c與前進機構16d連結,可藉由該前進機構16d而向該圖之左方向前進。自基板搬入口11a鬆弛插入並與搬送輥14a之上表面接觸之基板S藉由基板搬送機構14而向圖1(A)中之下方搬送。若被搬送至特定之位置,則基板S之下邊會碰撞第一固定構件16a,藉此不會進一步前進。繼而,調整構件16c向左方前進並與基板S之右邊接觸。藉由使該調整構件16c前進且進行推壓,而使基板S向左方移動,從而基板S之左邊與第二固定構件16b接觸。藉由以上之步驟,將基板S定位於停止在初始停止位置之後述之載置台17a之上方,且以該基板S之中心點位於該載置台17a之進行轉動之軸之鉛垂方向延長線上的方式進行定位。第一固定構件16a、第二固定構件16b、調整構件16c由於要與基板S接觸,故而較佳為軟質材料,但若硬度過低則定位精度變差,因此必須設為不損傷基板S之程度之硬度。於本實施形態中,使用聚對苯二甲酸乙二酯(PET)樹脂。又,前進機構16d亦可選自以油壓、氣壓或電氣進行驅動之缸體、具備滾珠螺桿或皮帶等之電動滑塊、齒條小齒輪等公知之方法。於本實施形態中使用氣缸。 The positioning mechanism 16 includes a first fixing member 16a disposed on the transport direction side (lower in FIG. 1(A)) with respect to the transported substrate S, and is disposed adjacent to the side on the transport direction side. The second fixing member 16b on the side of one side (leftward in FIG. 1(A)) and the adjusting member 16c disposed on the other side (in the right direction in FIG. 1(A)). The first fixing member 16a is fixed at a position where the lower side of the substrate S is set, and the second fixing member 16b is fixed at a position to the left of the setting substrate S. The adjustment member 16c is coupled to the advancement mechanism 16d, and is advanced in the left direction of the figure by the advancement mechanism 16d. The substrate S which is loosely inserted from the substrate carrying-in port 11a and is in contact with the upper surface of the conveying roller 14a is conveyed to the lower side in FIG. 1(A) by the substrate conveying mechanism 14. When being transported to a specific position, the lower side of the substrate S collides with the first fixing member 16a, so that it does not advance further. Then, the adjustment member 16c advances to the left and comes into contact with the right side of the substrate S. By advancing and pressing the adjustment member 16c, the substrate S is moved to the left, and the left side of the substrate S is in contact with the second fixing member 16b. By the above steps, the substrate S is positioned above the mounting table 17a which is stopped after the initial stop position, and the center point of the substrate S is located on the extension line of the axis on which the mounting table 17a is rotated. Way to locate. Since the first fixing member 16a, the second fixing member 16b, and the adjustment member 16c are preferably made of a soft material because they are in contact with the substrate S, if the hardness is too low, the positioning accuracy is deteriorated, and therefore it is necessary to set the degree of damage to the substrate S. Hardness. In the present embodiment, polyethylene terephthalate (PET) resin is used. Further, the forward mechanism 16d may be selected from a known method such as a cylinder that is driven by hydraulic pressure, air pressure, or electric power, an electric slider including a ball screw or a belt, and a rack pinion. In the present embodiment, a cylinder is used.
基板移動旋轉機構17具備:載置並且固定基板S之載置台17a、使該載置台17a沿左右方向移動之移行機構17b、及使該載置台17a轉動之轉動機構17c。載置台17a只要可載置基板S,且於利用移行機構17b進行移動時基板S於載置台17a上不會移動即可,因此可選自配置機械式固定之構造或摩擦係數較高之片材等公知之方法。於本實施形態中,設為如下構造:於平板上配置複數個與真空泵等抽吸機構(未圖示)連接之吸附墊,於該吸附墊上載置基板S後藉由啟動該抽吸機構,而利用抽吸力使基板S密接於該吸附墊上。又,載置台17a於藉由 基板搬送機構14搬送基板S時配置於搬送輥14a之下方。如後所述,為使載置台17a載置基板S,而使搬送輥14a下降。因此,載置台17a以於搬送輥14a下降時不與其接觸的方式構成。 The substrate moving and rotating mechanism 17 includes a mounting table 17a on which the substrate S is placed and fixed, a moving mechanism 17b that moves the mounting table 17a in the left-right direction, and a rotating mechanism 17c that rotates the mounting table 17a. The mounting table 17a only needs to be able to mount the substrate S, and the substrate S does not move on the mounting table 17a when moving by the moving mechanism 17b. Therefore, the substrate can be selected from a mechanically fixed structure or a sheet having a high coefficient of friction. And other known methods. In the present embodiment, a plurality of adsorption pads connected to a suction mechanism (not shown) such as a vacuum pump are disposed on the flat plate, and the suction mechanism is activated by placing the substrate S on the adsorption pad. The substrate S is adhered to the adsorption pad by suction. Moreover, the mounting table 17a is used by When the substrate transfer mechanism 14 transports the substrate S, it is disposed below the conveyance roller 14a. As will be described later, in order to mount the substrate S on the mounting table 17a, the conveying roller 14a is lowered. Therefore, the mounting table 17a is configured so as not to come into contact with the conveying roller 14a when it is lowered.
移行機構17b可使載置有基板S之載置台17a沿左右方向移動以加工基板S。於基板S移動時,必須使基板S以不與基板周緣部加工機構12之基板鬆弛插入部12e之端部及清潔機構13之下端接觸之方式移動。又,若不使基板S以固定速度移動,則會產生加工不均。移行機構17b只要可使基板S不於圖1(B)之上下方向振動且可使基板S於通過基板周緣部加工機構12時以固定之速度沿左右方向移動,則其構造並無特別限定。例如,可選自具備滾珠螺桿或皮帶等之電動滑塊、齒條小齒輪、可自行式台車等公知之方法。於本實施形態中,使用具備皮帶之電動滑塊。又,於自初始停止位置開始移動時及停止時會對基板S施加不必要之衝擊之情形時,較佳為使用變換器等可調整移動速度者,控制開始時及停止時之速度。 The transfer mechanism 17b can move the mounting table 17a on which the substrate S is placed in the left-right direction to process the substrate S. When the substrate S is moved, the substrate S must be moved so as not to come into contact with the end portion of the substrate slack insertion portion 12e of the substrate peripheral portion processing mechanism 12 and the lower end of the cleaning mechanism 13. Further, if the substrate S is not moved at a constant speed, processing unevenness occurs. The structure of the transition mechanism 17b is not particularly limited as long as the substrate S can be prevented from vibrating in the vertical direction of FIG. 1(B) and the substrate S can be moved in the left-right direction at a fixed speed when passing through the substrate peripheral portion processing mechanism 12. For example, it can be selected from known methods such as an electric slider including a ball screw or a belt, a rack pinion, and a self-propelled trolley. In the present embodiment, an electric slider including a belt is used. Further, when an unnecessary impact is applied to the substrate S at the time of starting from the initial stop position and at the time of stopping, it is preferable to adjust the moving speed using an inverter or the like to control the speed at the start and stop.
轉動機構17c係以圖1(A)中之載置台17a之上表面之中心為軸使載置台17a轉動90度。又,因於載置台17a上載置有基板S,故若於使載置台17a轉動時對基板S施加較強之振動或離心力,則有基板S之位置自載置台17a偏移之虞。如此,轉動機構17c只要可不對基板S施加較強之振動或衝擊力地進行轉動即可,其構造未特別限定。例如,可選自馬達或缸體等公知之方法。又,於轉動開始時及停止時會對基板S施加不必要之衝擊之情形時,較佳為使用可調整旋轉速度者,控制開始時及停止時之速度。於該情形時,例如可選自直接驅動馬達、伺服馬達、可調整伸縮速度之缸體(例如伺服缸體)等公知之方法。於本實施形態中,使用直接驅動馬達。 The rotating mechanism 17c rotates the mounting table 17a by 90 degrees with the center of the upper surface of the mounting table 17a in Fig. 1(A) as an axis. Further, since the substrate S is placed on the mounting table 17a, when a strong vibration or centrifugal force is applied to the substrate S when the mounting table 17a is rotated, the position of the substrate S is shifted from the mounting table 17a. As described above, the rotation mechanism 17c is not particularly limited as long as it can be rotated without applying a strong vibration or impact force to the substrate S. For example, it can be selected from known methods such as a motor or a cylinder. Further, when an unnecessary impact is applied to the substrate S at the start of the rotation and at the time of the stop, it is preferable to use the adjustable rotational speed to control the speed at the start and stop. In this case, for example, a known method such as a direct drive motor, a servo motor, or a cylinder (for example, a servo cylinder) that can adjust the speed of expansion and contraction can be selected. In the present embodiment, a direct drive motor is used.
繼而,使用圖5~圖7進一步對藉由本實施形態之噴射加工裝置去除基板S之周緣部之薄膜層的步驟進行說明。圖4~圖6分別表示自 前視方向觀察之剖面圖。此處,以加工長方形之薄膜太陽電池板用基板之情況為例進行說明。 Next, the procedure of removing the thin film layer on the peripheral edge portion of the substrate S by the jet processing apparatus of the present embodiment will be further described with reference to FIGS. 5 to 7. Figure 4 to Figure 6 show A cross-sectional view of the front view. Here, a case where a substrate for a rectangular thin film solar cell panel is processed will be described as an example.
(準備步驟) (preparation step)
對上述控制器件輸入用於良好地加工基板S之條件(基板S之尺寸、基板S之移動速度、噴射壓力、掃描次數、加工寬度等)。於輸入後,藉由將加工開始按鈕接通(ON),而以輸入之條件開始加工,且自動完成加工。此處,控制器件只要可輸入並控制噴射加工裝置10之動作即可,例如可使用可程式邏輯控制器(PLC,Programmable Logic Controller)或數位信號處理器(DSP,Digital Signal Processor)等運動控制器、高功能移動終端、高功能行動電話等。 The conditions for well-processing the substrate S (the size of the substrate S, the moving speed of the substrate S, the ejection pressure, the number of scans, the processing width, and the like) are input to the above-described control device. After the input, the machining start button is turned ON, and the machining is started under the condition of the input, and the machining is automatically completed. Here, the control device can input and control the operation of the jet processing apparatus 10, for example, a motion controller such as a programmable logic controller (PLC) or a digital signal processor (DSP) can be used. High-performance mobile terminals, high-performance mobile phones, etc.
(步驟1:搬入步驟) (Step 1: Move in step)
於基板搬送機構14作動後,自基板搬入口11a將基板S鬆弛插入。此處,以自長邊方向鬆弛插入之情況為例進行說明。自基板搬入口11a鬆弛插入之基板S藉由基板搬送機構14而前進。繼而,碰撞第一固定構件16a,從而搬送方向端之定位完成。之後,調整構件16c前進,使基板S向左方移動。之後,基板S之左邊碰撞第二固定構件16b,從而左右方向之定位完成。若基板S之定位結束,則上述基板搬送機構14停止。再者,第一固定構件16a以該第一固定構件16a彼此之間隔成為該基板之短邊之長度以上的方式而配置,以使其於加工結束後不與基板S碰撞。(參照圖5(A)) After the substrate transfer mechanism 14 is actuated, the substrate S is loosely inserted from the substrate transfer inlet 11a. Here, a case where the insertion is slack from the longitudinal direction will be described as an example. The substrate S that has been loosely inserted from the substrate carrying-in port 11a advances by the substrate transfer mechanism 14. Then, the first fixing member 16a is collided, so that the positioning of the conveying direction end is completed. Thereafter, the adjustment member 16c advances to move the substrate S to the left. Thereafter, the left side of the substrate S collides with the second fixing member 16b, so that the positioning in the left-right direction is completed. When the positioning of the substrate S is completed, the substrate transfer mechanism 14 is stopped. Further, the first fixing member 16a is disposed such that the distance between the first fixing members 16a is equal to or longer than the length of the short side of the substrate so as not to collide with the substrate S after the processing is completed. (Refer to Figure 5 (A))
(步驟2:載置步驟) (Step 2: Loading step)
升降機構15作動,從而基板搬送機構14下降。基板移動旋轉機構17之載置台17a係停止於基板S之下方(初始停止位置)。若基板搬送機構14較載置台17a而位於下方,則基板S自基板搬送機構14轉置於載置台17a。若基板S轉置於載置台17a,則抽吸機構作動,從而基板S被固定於該載置台17a上。如此,基板S以彼此對向之長邊即第一加工邊 位於上下方向且基板S之平面中心與載置台17a轉動時之軸心一致之方式載置並固定於載置台17a上。(參照圖5(B)) When the elevating mechanism 15 is actuated, the substrate transport mechanism 14 is lowered. The mounting table 17a of the substrate moving and rotating mechanism 17 is stopped below the substrate S (initial stop position). When the substrate transfer mechanism 14 is positioned below the mounting table 17a, the substrate S is transferred from the substrate transfer mechanism 14 to the mounting table 17a. When the substrate S is placed on the mounting table 17a, the suction mechanism is actuated, and the substrate S is fixed to the mounting table 17a. Thus, the substrate S is opposite to each other, that is, the first processed side The center of the plane of the substrate S is placed in the vertical direction and is placed on the mounting table 17a so as to match the axis of the mounting table 17a. (Refer to Figure 5(B))
(步驟3:第一加工邊之加工步驟) (Step 3: Processing steps of the first processing edge)
上述間隔調整機構作動,從而一對基板周緣部加工單元U(基板周緣部加工機構12及與該基板周緣部加工機構12之左右鄰接之清潔機構13)配合第一加工邊彼此之間隔而於圖1(A)之上下方向移動。藉此,調整基板周緣部加工單元U彼此之間隔。繼而,集塵機構作動,對基板周緣部加工機構12內及清潔機構13內進行抽吸。進而,壓縮空氣供給機構及噴射材供給機構18作動,自噴嘴N噴射噴射材,並自清潔噴嘴13b噴射壓縮空氣。之後,移行機構17b作動,從而載置台17a向右方向移動。繼而,基板S之第一加工邊鬆弛插入並通過基板周緣部加工機構12之基板鬆弛插入部12e。藉由鬆弛插入於基板鬆弛插入部12e之第一加工邊通過噴嘴N之下方,而去除上述第一加工邊之薄膜層。於通過基板周緣部加工機構12後之基板S之表面,有粉塵未被抽吸幹凈而殘留之情況。該粉塵藉由通過與基板周緣部加工機構12之右方鄰接之清潔機構13之下方而被去除。又,由於如上所述般與先前之噴射加工裝置相比可降低基板S之重心進行移動,故而上下方向之振動變小,可穩定地進行移動。(參照圖6(A)) The interval adjusting mechanism is actuated to match the pair of substrate peripheral edge processing units U (the substrate peripheral edge processing mechanism 12 and the cleaning mechanism 13 adjacent to the left and right sides of the substrate peripheral edge processing mechanism 12) with respect to the first processed edges. 1 (A) moves up and down. Thereby, the interval between the peripheral portions of the substrate processing units U is adjusted. Then, the dust collecting mechanism is actuated to suction the inside of the substrate peripheral portion processing mechanism 12 and the cleaning mechanism 13. Further, the compressed air supply means and the injection material supply means 18 are actuated to eject the injection material from the nozzle N and to eject the compressed air from the cleaning nozzle 13b. Thereafter, the moving mechanism 17b is actuated, and the mounting table 17a is moved in the right direction. Then, the first processed side of the substrate S is loosely inserted and passed through the substrate slack insertion portion 12e of the substrate peripheral portion processing mechanism 12. The film layer of the first processed side is removed by loosely inserting the first processed side of the substrate slack insertion portion 12e below the nozzle N. On the surface of the substrate S that has passed through the substrate peripheral portion processing mechanism 12, dust may remain without being sucked clean. This dust is removed by passing under the cleaning mechanism 13 adjacent to the right side of the substrate peripheral edge processing mechanism 12. Further, since the center of gravity of the substrate S can be moved lower than that of the conventional jet processing apparatus as described above, the vibration in the vertical direction is reduced, and the movement can be stably performed. (Refer to Figure 6(A))
(步驟4:轉動步驟) (Step 4: Turn the step)
若第一加工邊之全長通過上述基板周緣部加工單元U,並且基板S前進至右方之特定之位置(去路停止位置),則移行機構17b之作動停止。於停止後,轉動機構17c以使與第一加工邊鄰接之第二加工邊(彼此對向之短邊)位於上下方向之方式進行作動,使基板S轉動90度。又,上述間隔調整機構作動,從而上述一基板周緣部加工單元U沿圖1(A)之上下方向移動。藉此,調整基板周緣部加工單元U彼此之間隔。(參照圖6(B)) When the entire length of the first processed side passes through the substrate peripheral portion processing unit U and the substrate S advances to a specific position on the right side (outward stop position), the operation of the transition mechanism 17b is stopped. After the stop, the rotating mechanism 17c operates to move the substrate S by 90 degrees so that the second processed edges (the short sides facing each other) adjacent to the first machined edge are positioned in the vertical direction. Further, the interval adjusting mechanism is actuated to move the one-substrate peripheral portion processing unit U in the vertical direction of FIG. 1(A). Thereby, the interval between the peripheral portions of the substrate processing units U is adjusted. (Refer to Figure 6(B))
(步驟5:第二加工邊之加工步驟) (Step 5: Processing steps of the second processing side)
移行機構17b作動,從而基板S及載置台17a向左方向移動。繼而,上述第二加工邊鬆弛插入並通過基板周緣部加工機構12之基板鬆弛插入部12e。藉由鬆弛插入於基板鬆弛插入部12e之第二加工邊通過噴嘴N之下方,而去除上述第二加工邊之薄膜層。於通過基板周緣部加工機構12後之基板S之表面,有粉塵未被抽吸幹凈而殘留之情況。該粉塵藉由通過與基板周緣部加工機構12之左方鄰接之清潔機構13之下方而被去除。繼而,若第二加工邊之全長通過上述基板周緣部加工單元U,並且載置台17a前進至左方之特定之位置(初始停止位置),則移行機構17b之作動停止。(參照圖7(A)) When the transition mechanism 17b is actuated, the substrate S and the mounting table 17a move in the left direction. Then, the second processed side is loosely inserted and passed through the substrate slack insertion portion 12e of the substrate peripheral portion processing mechanism 12. The thin film layer of the second processed side is removed by loosely inserting the second processed side of the substrate slack insertion portion 12e below the nozzle N. On the surface of the substrate S that has passed through the substrate peripheral portion processing mechanism 12, dust may remain without being sucked clean. This dust is removed by passing under the cleaning mechanism 13 adjacent to the left side of the substrate peripheral edge processing mechanism 12. Then, when the entire length of the second processed side passes through the substrate peripheral portion processing unit U, and the mounting table 17a advances to a specific position (initial stop position) on the left side, the operation of the transition mechanism 17b is stopped. (Refer to Figure 7(A))
(步驟6:搬出步驟) (Step 6: Move out step)
於移行機構17b之作動停止後,上述噴射材供給機構18及上述壓縮空氣供給機構之作動停止,而停止噴射材及壓縮空氣之噴射。之後,上述集塵機構之作動停止。又,上述抽吸機構之作動停止,從而基板S之固定被解除。繼而,升降機構15作動,基板搬送機構14上升,而將基板S轉置於搬送輥14a上。若基板搬送機構14上升至特定之位置,則上述升降機構15之作動停止。之後,藉由上述旋轉機構之作動而使基板搬送機構14作動,從而基板S前進。並且,自基板搬出口11b搬出。如此,可利用同一基板搬送機構14進行基板S之搬入及搬出,因此與先前之噴射加工裝置相比,可廉價地製造噴射加工裝置。 After the operation of the moving mechanism 17b is stopped, the operation of the injection material supply mechanism 18 and the compressed air supply mechanism is stopped, and the ejection of the injection material and the compressed air is stopped. Thereafter, the operation of the dust collecting mechanism is stopped. Further, the operation of the suction mechanism is stopped, and the fixation of the substrate S is released. Then, the elevating mechanism 15 is actuated, the substrate transport mechanism 14 is raised, and the substrate S is transferred to the transport roller 14a. When the substrate transfer mechanism 14 is raised to a specific position, the operation of the lift mechanism 15 is stopped. Thereafter, the substrate transfer mechanism 14 is actuated by the operation of the rotating mechanism, whereby the substrate S advances. Then, it is carried out from the substrate discharge port 11b. In this manner, since the substrate S can be carried in and out by the same substrate transfer mechanism 14, the jet processing apparatus can be manufactured at a lower cost than the conventional jet processing apparatus.
(參照圖7(B)) (Refer to Figure 7(B))
藉由重複進行步驟1~步驟5,而可連續加工複數片基板S。於連續加工複數片基板S之情形時,於步驟5中亦可不使噴射材供給機構18、壓縮空氣供給機構、集塵機構之作動停止。 The plurality of substrates S can be continuously processed by repeating steps 1 to 5. In the case where the plurality of substrates S are continuously processed, the operation of the shot material supply mechanism 18, the compressed air supply mechanism, and the dust collecting mechanism may not be stopped in step 5.
於基板S之薄膜層較硬之情形等,藉由一次加工無法完全去除不需要之薄膜層之情形時,亦可藉由重複進行步驟3~步驟5而增加掃描 次數。於增加掃描次數之情形時,亦可於再次進行步驟3之前使轉動機構17c作動而使基板S轉動90度。 When the film layer of the substrate S is hard, and the film layer cannot be completely removed by one process, the scanning may be further performed by repeating steps 3 to 5. frequency. When the number of scans is increased, the rotation mechanism 17c may be actuated to rotate the substrate S by 90 degrees before the step 3 is performed again.
由集塵器件抽吸並回收之噴射材被送至旋風分離器(cyclone)等分離機構(未圖示),且被分離為可再利用之噴射材及除此以外之粉末,可再利用之噴射材被送至噴射材供給機構18,並再次自噴嘴N噴射。 The sprayed material sucked and recovered by the dust collecting device is sent to a separating mechanism (not shown) such as a cyclone, and is separated into a reusable sprayed material and powders other than the above, which can be reused. The shot material is sent to the shot material supply mechanism 18 and ejected again from the nozzle N.
本實施形態之噴射加工裝置10具備一對基板周緣部加工機構12,但亦可根據所期望之加工時間而增減基板周緣部加工機構12之台數。例如,於配置有一台基板周緣部加工機構12(例如僅配置於圖1(A)之上方)之情形時,可藉由使掃描次數(步驟3~步驟5之實施次數)為兩次以上而完成加工。於該構成中,雖基板之加工時間變長,但可使噴射加工裝置之製造費用為廉價。又,若對於一邊增加基板周緣部加工機構12之台數,則加工能力提高,因此可加快基板S之移動速度。其結果,可縮短基板S之加工時間,因此生產性提高。 Although the jet processing apparatus 10 of the present embodiment includes a pair of substrate peripheral portion processing mechanisms 12, the number of substrate peripheral portion processing mechanisms 12 can be increased or decreased depending on the desired processing time. For example, when a substrate peripheral portion processing mechanism 12 is disposed (for example, only disposed above FIG. 1(A)), the number of scans (the number of steps 3 to 5) can be made twice or more. Finished processing. In this configuration, although the processing time of the substrate is long, the manufacturing cost of the jet processing apparatus can be made inexpensive. Moreover, when the number of the peripheral portion processing means 12 of the substrate is increased, the processing capability is improved, so that the moving speed of the substrate S can be increased. As a result, the processing time of the substrate S can be shortened, and productivity is improved.
於本實施形態中,於1台基板周緣部加工機構12配置有1台噴嘴N,但亦可配置複數台噴嘴。藉由增加噴嘴之個數而使加工能力提高,因此可縮短加工時間。 In the present embodiment, one nozzle N is disposed in one substrate peripheral portion processing mechanism 12, but a plurality of nozzles may be disposed. By increasing the number of nozzles, the processing capability is improved, so that the processing time can be shortened.
[實施例] [Examples]
將使用第一實施形態之噴射加工裝置去除基板S之周緣部之不需要之薄膜層的結果作為實施例進行說明。於實施例中,對於1100mm×1400mm×厚度3mm之薄膜太陽電池板,使用第一實施形態之噴射加工裝置以表1之條件去除周緣部之不需要之薄膜層。實施例中使用之薄膜太陽電池板係於透光性基材(於本實施例中為玻璃基材)之平面上積層有形成薄膜太陽電池板(以下記為面板)所需之薄膜層(透明電極層、或光半導體層、或金屬層等)者。又,以使用專利文獻1記載之噴射加工裝置(先前之噴射加工裝置)進行同樣之加工之例為比較例1,以將面板之移動速度設為200mm/sec且其他之條件與比較例1相同 地加工面板之例為比較例2而進行說明。再者,將目標加工寬度(去除薄膜層之自周緣端起算之寬度)設為16mm。 The result of removing the unnecessary thin film layer of the peripheral edge portion of the substrate S by the jet processing apparatus of the first embodiment will be described as an example. In the examples, for a thin film solar cell panel of 1100 mm × 1400 mm × 3 mm in thickness, an unnecessary film layer of the peripheral portion was removed under the conditions of Table 1 using the jet processing apparatus of the first embodiment. The thin film solar cell panel used in the embodiment is laminated on a plane of a light-transmitting substrate (in the present embodiment, a glass substrate) to form a film layer (formed as a panel) required for forming a thin film solar cell panel (hereinafter referred to as a panel) (transparent Electrode layer, or optical semiconductor layer, or metal layer, etc.). In addition, an example in which the same processing is performed using the jet processing apparatus (previously the jet processing apparatus) described in Patent Document 1 is Comparative Example 1, and the moving speed of the panel is set to 200 mm/sec and the other conditions are the same as in Comparative Example 1. An example of the ground processing panel is described in Comparative Example 2. Further, the target processing width (the width from which the film layer was removed from the peripheral edge) was set to 16 mm.
藉由掃描式電子顯微鏡(SEM)觀察加工後之面板並對其進行評估。於實施例中,於加工區域M未殘留有薄膜層,又,於除加工區域M以外之薄膜層未發現有損傷。於比較例1中,於加工區域M殘留有薄膜層。又,於比較例2中,於加工區域未殘留有薄膜層,並且於除加工區域以外之薄膜層未發現有損傷。其結果顯示,先前之噴射加工裝置於與本實施形態之噴射加工裝置相同之條件下無法充分去除面板上之不需要之薄膜層,即,本實施形態之噴射加工裝置與先前之噴射加工裝置相比加工能力較強,並可以其1.25倍之加工速度進行加工。 The processed panels were observed by a scanning electron microscope (SEM) and evaluated. In the examples, no film layer remained in the processing region M, and no damage was observed in the film layer except the processing region M. In Comparative Example 1, a film layer remained in the processed region M. Further, in Comparative Example 2, no film layer remained in the processed region, and no damage was observed in the film layer other than the processed region. As a result, it has been found that the prior art jet processing apparatus cannot sufficiently remove the unnecessary film layer on the panel under the same conditions as the jet processing apparatus of the present embodiment, that is, the jet processing apparatus of the present embodiment is different from the previous jet processing apparatus. It has higher processing capacity and can process at 1.25 times its processing speed.
繼而,將於一對基板周緣部加工機構12之間,配置有具備基板中間部加工機構19及與該基板中間部加工機構19鄰接之清潔機構13之基板中間部加工單元U'的情況作為第二實施形態進行說明。此處,以於一對基板周緣部加工單元U之中央設有一台基板中間部加工單元U',並藉由基板周緣部加工U及基板中間部加工單元U'同時加工基板S的情況為例進行說明。根據該構成,噴射加工後之基板S係於第一加工邊、第二加工邊、及以與第一加工邊以及第二加工邊對向之方式形 成於該等邊彼此之間的邊,形成有加工區域M。而且,藉由切斷利用上述基板中間部加工機構19而形成之加工區域M之中央,可獲得經去除周緣部之不需要之薄膜層之四片基板S'。再者,第二實施形態之噴射加工裝置僅於配置有基板中間部加工單元之方面有所不同,故而此處僅對與第一實施形態之不同點進行說明。 Then, a case where the substrate intermediate portion processing unit 19 and the substrate intermediate portion processing unit U' of the cleaning mechanism 13 adjacent to the substrate intermediate portion processing unit 19 are disposed between the pair of substrate peripheral portion processing mechanisms 12 The second embodiment will be described. Here, a case where the substrate intermediate portion processing unit U' is provided in the center of the pair of substrate peripheral portion processing units U, and the substrate S is processed by the substrate peripheral portion processing unit U and the substrate intermediate portion processing unit U'. Be explained. According to this configuration, the substrate S after the blast processing is formed on the first processed side, the second processed side, and the first processed side and the second processed side. A processing region M is formed on the side between the sides. Further, by cutting the center of the processing region M formed by the substrate intermediate portion processing mechanism 19, four substrates S' having the unnecessary thin film layers removed from the peripheral portion can be obtained. Further, the jet processing apparatus according to the second embodiment differs only in the case where the substrate intermediate portion processing unit is disposed. Therefore, only differences from the first embodiment will be described herein.
如圖8(A)所示,基板中間部加工機構19具備:下端開口之箱體即飛散防止罩19a、配置於頂面之中央部之噴嘴19b、及兩端開口之圓筒形狀之抽吸構件19c。噴嘴19b以下端即噴射口位於上述飛散防止罩19a之內部之方式而固定,又,與噴射材供給機構18及壓縮空氣供給機構連結。上述抽吸構件19c以位於噴嘴19b之左右(即,基板S之行進方向)之方式與上述飛散防止罩19a之頂面連結,且另一端經由軟管而與集塵機構連結。藉此,上述飛散防止罩19a內側之空間與集塵機構連通。再者,上述飛散防止罩19a之橫截面形狀並無特別限定,可為四邊形等多邊形亦可為圓形。 As shown in Fig. 8(A), the intermediate portion processing mechanism 19 includes a scattering prevention cover 19a which is a lower opening, a nozzle 19b which is disposed at a central portion of the top surface, and a cylindrical suction which is open at both ends. Member 19c. The lower end of the nozzle 19b, that is, the injection port is fixed inside the scattering prevention cover 19a, and is coupled to the injection material supply mechanism 18 and the compressed air supply mechanism. The suction member 19c is connected to the top surface of the scattering prevention cover 19a so as to be positioned on the right and left sides of the nozzle 19b (that is, the traveling direction of the substrate S), and the other end is coupled to the dust collecting mechanism via a hose. Thereby, the space inside the scattering prevention cover 19a communicates with the dust collecting means. Further, the cross-sectional shape of the scattering preventing cover 19a is not particularly limited, and may be a polygon such as a quadrangle or a circular shape.
噴嘴19b較佳為設為與上述噴嘴N同樣之構造。但,噴嘴19b之噴射口之寬度較佳為寬於上述噴嘴N之噴射口之寬度。如上所述,對於加工後之基板S,要切斷藉由基板中間部加工機構19加工之加工區域M之中央,因此基板中間部加工機構19之加工區域之寬度較佳為寬於第一加工邊及第二加工邊之加工寬度。例如以基板中間部加工機構19之加工區域M之寬度成為第一加工邊及第二加工邊之兩倍左右之方式選擇噴嘴19b之噴射口之寬度。噴嘴19b係不與基板S之表面接觸地與該表面對向配置。 The nozzle 19b is preferably configured similarly to the nozzle N described above. However, the width of the ejection opening of the nozzle 19b is preferably wider than the width of the ejection opening of the nozzle N described above. As described above, in the processed substrate S, the center of the processing region M processed by the substrate intermediate portion processing mechanism 19 is cut, so that the width of the processing region of the substrate intermediate portion processing mechanism 19 is preferably wider than the first processing. The processing width of the edge and the second machined edge. For example, the width of the ejection opening of the nozzle 19b is selected such that the width of the processing region M of the substrate intermediate portion processing mechanism 19 is about twice the width of the first processed edge and the second processed edge. The nozzle 19b is disposed opposite to the surface without coming into contact with the surface of the substrate S.
基板中間部加工機構19係以於基板S於下方通過時在飛散防止罩19a之下端與該基板S之間形成適度之間隙的方式而配置。即,以飛散防止罩19a之下端不與基板S接觸之方式而配置。於飛散防止罩19a之下端部附近,自設於飛散防止罩19a與基板S之間之間隙抽吸外部空 氣,因此產生自該飛散防止罩19a之外側向內側流動之氣流。因此,粉塵不會向基板中間部加工機構19之外部漏出。然而,若飛散防止罩19a之下端與基板S之間隔過小,則有基板S與飛散防止罩19a之下端接觸而受損之虞。若間隔過大,則抽吸外部空氣之風速變小,因此無法充分抽吸飛散於基板中間部加工機構19之內部之粉塵。其結果,該粉塵向上述基板中間部加工機構19之外部漏出。若上述間隙過窄,則有基板S與飛散防止罩19a之下端接觸而受損之虞。因此,上述間隙必須設定於基板S不與飛散防止罩19a接觸且無損抽吸力之範圍。於第二實施形態中,以基板S之表面與上述飛散防止罩19a之下端之間隔(間隙)成為1.0~5.0mm之方式進行設定。 The substrate intermediate portion processing mechanism 19 is disposed such that an appropriate gap is formed between the lower end of the scattering preventing cover 19a and the substrate S when the substrate S passes downward. That is, the lower end of the scattering preventing cover 19a is disposed so as not to be in contact with the substrate S. In the vicinity of the lower end portion of the scattering preventing cover 19a, the space is externally provided between the scattering preventing cover 19a and the substrate S. The gas thus generates a flow of air flowing from the outside to the outside of the scattering preventing cover 19a. Therefore, the dust does not leak to the outside of the substrate intermediate portion processing mechanism 19. However, if the distance between the lower end of the scattering preventing cover 19a and the substrate S is too small, the substrate S may be damaged by contact with the lower end of the scattering preventing cover 19a. If the interval is too large, the wind speed at which the outside air is sucked becomes small, so that the dust scattered inside the processing portion 19 of the intermediate portion of the substrate cannot be sufficiently sucked. As a result, the dust leaks to the outside of the substrate intermediate portion processing mechanism 19. When the gap is too narrow, the substrate S is in contact with the lower end of the scattering preventing cover 19a and is damaged. Therefore, the above-described gap must be set in a range in which the substrate S is not in contact with the scattering prevention cover 19a and the suction force is not impaired. In the second embodiment, the distance between the surface of the substrate S and the lower end of the scattering preventing cover 19a (gap) is set to 1.0 to 5.0 mm.
於基板中間部加工機構19之左右,與基板周緣部加工機構12同樣地鄰接有上述清潔機構13。於通過基板中間部加工機構19後之基板S之表面附著有粉塵之情形時,可藉由該清潔機構13去除該粉塵。 The cleaning mechanism 13 is adjacent to the substrate peripheral portion processing mechanism 12 on the left and right sides of the substrate intermediate portion processing mechanism 19. When dust adheres to the surface of the substrate S after passing through the substrate intermediate portion processing mechanism 19, the dust can be removed by the cleaning mechanism 13.
如圖8(B)所示,將具備基板中間部加工機構19及與該中央加工室19鄰接之清潔機構13之基板中間部加工單元U'以位於一對基板周緣部加工單元U彼此之中央之方式而配置。而且,於按照上述第一實施形態記載之步驟1~步驟6加工基板時,藉由上述集塵機構對基板中間部加工單元U'之飛散防止罩19a與清潔機構13之內部進行抽吸,並且自上述噴嘴19b噴射噴射材,自上述清潔噴嘴13b噴射壓縮空氣而加工基板S。藉由該加工,而完成去除4邊之周緣部及位於該等邊之中央並與4邊對向之兩直線之不需要之薄膜層的加工(參照圖9(A))。於加工結束後,切斷藉由基板中間部加工機構19加工之加工區域之中央,藉此可獲得經去除周緣部之不需要之薄膜層之四片基板S'(參照圖9(B))。 As shown in Fig. 8(B), the substrate intermediate portion processing unit U' including the substrate intermediate portion processing mechanism 19 and the cleaning mechanism 13 adjacent to the central processing chamber 19 is located at the center of each of the pair of substrate peripheral portion processing units U. Configured in a way. Further, when the substrate is processed in the steps 1 to 6 described in the first embodiment, the scattering preventing cover 19a and the inside of the cleaning mechanism 13 of the substrate intermediate portion processing unit U' are sucked by the dust collecting means, and The nozzle 19b ejects an injection material, and ejects compressed air from the cleaning nozzle 13b to process the substrate S. By this processing, the processing of the unnecessary thin film layer which removes the peripheral portion of the four sides and the two straight lines which are located at the center of the sides and the four sides is completed (see FIG. 9(A)). After the completion of the processing, the center of the processing region processed by the substrate intermediate portion processing mechanism 19 is cut, whereby the four substrates S' having the unnecessary thin film layers removed from the peripheral portion can be obtained (see FIG. 9(B)). .
亦可配置複數台基板中間部加工機構19。例如於一對基板周緣部加工單元U之間配置兩台基板中間部加工機構19,並進行同樣之加工,藉此可獲得如圖9(C)所示之基板S。又,與基板中間部加工機構 19之台數無關,亦可僅於步驟3或步驟5之任一者之情形時藉由基板中間部加工機構19進行加工,藉此可獲得如圖9(D)所示之基板S(於圖9(D)中,僅於步驟5時自基板中間部加工機構19之噴嘴19b噴射噴射材而進行加工)。 A plurality of substrate intermediate portion processing mechanisms 19 may also be disposed. For example, two substrate intermediate portion processing mechanisms 19 are disposed between the pair of substrate peripheral portion processing units U, and the same processing is performed, whereby the substrate S as shown in FIG. 9(C) can be obtained. Moreover, the processing mechanism with the intermediate portion of the substrate Regardless of the number of the steps of 19, it can be processed by the substrate intermediate processing mechanism 19 only in the case of either step 3 or step 5, whereby the substrate S as shown in Fig. 9(D) can be obtained. In Fig. 9(D), only in the step 5, the spray material is ejected from the nozzle 19b of the intermediate portion processing mechanism 19 of the substrate and processed.
[產業上之可利用性] [Industrial availability]
於實施例中,對加工薄膜太陽電池板進行了說明,但只要為去除基板周緣部之不需要之薄膜層之用途,便可較佳地使用本發明之噴射加工裝置而不限於薄膜太陽電池板。 In the embodiment, the processed thin film solar cell panel has been described, but the jet processing apparatus of the present invention can be preferably used instead of the thin film solar panel as long as it is used for removing the unnecessary thin film layer on the peripheral portion of the substrate. .
10‧‧‧噴射加工裝置 10‧‧‧Jet processing equipment
11‧‧‧框體 11‧‧‧ frame
11a‧‧‧基板搬入口 11a‧‧‧Substrate entrance
11b‧‧‧基板搬出口 11b‧‧‧Substrate removal
12‧‧‧基板周緣部加工機構 12‧‧‧The peripheral processing part of the substrate
13‧‧‧清潔機構 13‧‧‧ Cleaning institutions
14‧‧‧基板搬送機構 14‧‧‧Substrate transport mechanism
14a‧‧‧搬送輥 14a‧‧‧Transport roller
14b‧‧‧架台 14b‧‧‧Rack
14c‧‧‧輥構件 14c‧‧‧roller components
14d‧‧‧軸 14d‧‧‧Axis
14e‧‧‧軸承 14e‧‧‧ bearing
15‧‧‧升降機構 15‧‧‧ Lifting mechanism
16‧‧‧定位機構 16‧‧‧ Positioning agency
16a‧‧‧第一固定構件 16a‧‧‧First fixed component
16b‧‧‧第二固定構件 16b‧‧‧Second fixed component
16c‧‧‧調整構件 16c‧‧‧Adjusting components
16d‧‧‧調整機構 16d‧‧‧Adjustment agency
17‧‧‧基板移動旋轉機構 17‧‧‧Substrate moving rotating mechanism
17a‧‧‧載置台 17a‧‧‧ mounting table
17b‧‧‧移行機構 17b‧‧‧Transition agency
17c‧‧‧轉動機構 17c‧‧‧Rotating mechanism
18‧‧‧噴射材供給機構 18‧‧‧Spray material supply mechanism
18a‧‧‧料斗 18a‧‧‧ hopper
18b‧‧‧定量供給機構 18b‧‧‧Quantitative supply agency
H‧‧‧軟管 H‧‧‧Hose
S‧‧‧基板 S‧‧‧Substrate
U‧‧‧基板周緣部加工單元 U‧‧‧Surface peripheral processing unit

Claims (15)

  1. 一種噴射加工裝置,其特徵在於:其係用以於表面形成有薄膜層之基板中去除基板周緣部之薄膜層者,且包括:基板周緣部加工機構,其包含形成有供上述基板周緣部鬆弛插入之基板鬆弛插入部之基板周緣部加工室、配置為前端插入於上述基板周緣部加工室之內部並對鬆弛插入於上述基板鬆弛插入部之上述基板周緣部噴射噴射材之噴嘴、與上述噴嘴連通並配置於該噴嘴之上方之噴射材供給機構、及與上述基板周緣部加工室連通之集塵機構;基板移動旋轉機構,其包含載置上述基板並使該基板相對於上述噴嘴相對地進行水平移動且使上述基板旋轉之機構;基板搬送機構,其將上述基板搬送至上述基板移動旋轉機構之初始停止位置之上方;及升降機構,其與上述基板搬送機構連結,用於使上述基板搬送機構下降而將上述基板轉置於基板移動旋轉機構。 A jet processing apparatus for removing a film layer on a peripheral portion of a substrate in a substrate having a thin film layer formed thereon, and comprising: a peripheral portion processing mechanism for forming a substrate, wherein the peripheral portion of the substrate is formed to be relaxed a substrate peripheral portion processing chamber of the inserted substrate slack insertion portion, a nozzle that is inserted into the peripheral portion of the substrate peripheral processing chamber, and a nozzle that ejects the ejection material into the substrate peripheral portion of the substrate slack insertion portion, and the nozzle a spray material supply mechanism that communicates with and is disposed above the nozzle, and a dust collection mechanism that communicates with the processing chamber of the peripheral portion of the substrate; and a substrate moving and rotating mechanism that mounts the substrate and horizontally positions the substrate relative to the nozzle a mechanism for moving the substrate to rotate, a substrate transfer mechanism for transporting the substrate above an initial stop position of the substrate moving and rotating mechanism, and a lifting mechanism coupled to the substrate transfer mechanism for causing the substrate transfer mechanism The substrate is transferred to the substrate moving rotary mechanism by lowering.
  2. 如請求項1之噴射加工裝置,其中上述噴嘴為藉由於該噴嘴內部產生之抽吸力而抽吸噴射材之構造者。 The jet processing apparatus of claim 1, wherein the nozzle is a constructor that sucks the spray material by a suction force generated inside the nozzle.
  3. 如請求項1或2之噴射加工裝置,其中上述噴嘴為如下構造者:包含噴射壓縮空氣之空氣噴嘴、設有供給噴射材之噴射材供給路徑且於內部設有與上述供給路徑連通之混合室之噴嘴座、及與上述混合室連通並且設於上述空氣噴嘴之延長方向之噴射噴嘴;且藉由於上述混合室內產生之抽吸力而抽吸噴射材。 The jet processing apparatus according to claim 1 or 2, wherein the nozzle is a structure including an air nozzle that injects compressed air, a spray material supply path provided with a supply of the spray material, and a mixing chamber that is internally connected to the supply path. a nozzle holder, and an injection nozzle that communicates with the mixing chamber and is provided in an extending direction of the air nozzle; and suctions the material by a suction force generated in the mixing chamber.
  4. 如請求項1或2之噴射加工裝置,其中上述噴射材供給機構進而包含用於將預先設定之量之噴射材連續供給至上述噴嘴之定量供給機構。 The jet processing apparatus according to claim 1 or 2, wherein the injection material supply mechanism further includes a quantitative supply mechanism for continuously supplying a predetermined amount of the injection material to the nozzle.
  5. 如請求項1或2之噴射加工裝置,其進而包括鄰接於上述基板周緣部加工機構之清潔機構。 The blasting apparatus of claim 1 or 2, further comprising a cleaning mechanism adjacent to the peripheral processing portion of the substrate.
  6. 如請求項5之噴射加工裝置,其中上述清潔機構包含:以與上述基板之表面對向之方式而配置、且下端開口之殼體;前端插入於上述殼體之內部而配置,並向上述基板噴射壓縮空氣之清潔噴嘴;及設於上述殼體、並與集塵機構連通之抽吸構件。 The blasting apparatus according to claim 5, wherein the cleaning means includes: a housing that is disposed to face the surface of the substrate and has a lower end; the front end is inserted into the inside of the housing, and is disposed to the substrate a cleaning nozzle that sprays compressed air; and a suction member that is disposed in the casing and communicates with the dust collecting mechanism.
  7. 如請求項1或2之噴射加工裝置,其進而包括自外側包圍上述基板周緣部加工機構、上述基板移動旋轉機構、及上述基板搬送機構之框體,上述基板搬送機構進而具備:將上述基板搬入上述框體內之功能、及將去除上述基板周緣部之薄膜層後之基板搬出至上述框體之外部之功能。 The blasting apparatus according to claim 1 or 2, further comprising a frame that surrounds the substrate peripheral portion processing mechanism, the substrate movement rotation mechanism, and the substrate transfer mechanism from the outside, the substrate transfer mechanism further comprising: loading the substrate The function in the inside of the casing and the function of removing the substrate after removing the thin film layer on the peripheral portion of the substrate to the outside of the casing.
  8. 如請求項1或2之噴射加工裝置,其包括用於使被搬送至上述基板移動旋轉機構之上方之基板於特定之位置停止之定位機構。 The jet processing apparatus according to claim 1 or 2, further comprising: a positioning mechanism for stopping the substrate conveyed above the substrate moving and rotating mechanism at a specific position.
  9. 如請求項1或2之噴射加工裝置,其包括一對上述基板周緣部加工機構,該基板周緣部加工機構係使各自之上述基板鬆弛插入部彼此相向且隔開特定之間隔而配置。 The jet processing apparatus according to claim 1 or 2, further comprising a pair of the substrate peripheral portion processing means, wherein the substrate peripheral edge processing means is disposed such that the respective substrate slack insertion portions face each other with a predetermined interval therebetween.
  10. 如請求項1或2之噴射加工裝置,其中進而配置有基板中間部加工機構,該基板中間部加工機構包含:以與上述基板之表面對向之方式而配置且下端開口之飛散防止罩、配置為前端插入於上述飛散防止罩之內部並對除上述基板周緣部以外之部分噴射噴射材之噴嘴、及設於上述飛散防止罩並與上述集塵機構連結之抽吸構件。 The blasting apparatus according to claim 1 or 2, further comprising: a substrate intermediate portion processing mechanism including: a scattering prevention cover disposed at a position opposite to a surface of the substrate and having a lower end opening A nozzle that is inserted into the inside of the scattering prevention cover and that ejects the injection material from a portion other than the peripheral edge portion of the substrate, and a suction member that is provided in the scattering prevention cover and that is coupled to the dust collecting mechanism.
  11. 如請求項1或2之噴射加工裝置,其中藉由上述噴射加工裝置進行加工之基板為於透光性基材之平面上積層有用於形成薄膜太陽電池板之薄膜層的薄膜太陽電池板。 The blasting apparatus according to claim 1 or 2, wherein the substrate processed by the blasting apparatus is a thin film solar panel in which a thin film layer for forming a thin film solar cell is laminated on a plane of the light-transmitting substrate.
  12. 一種噴射加工方法,其特徵在於:其係用於藉由如請求項1至11中任一項之噴射加工裝置而去除上述基板周緣部之薄膜層者,且包括:藉由上述基板搬送機構將上述基板搬送至上述基板移動旋轉機構之上方之步驟;用於使被搬送至上述基板移動旋轉機構之上方之基板於特定之位置停止之定位步驟;將上述基板搬送機構下降而將上述基板轉置於上述基板移動旋轉機構,並且將該基板固定於基板移動旋轉機構之步驟;將上述基板移動旋轉機構水平移動而將上述基板周緣部之至少一邊鬆弛插入於上述基板周緣部加工機構之基板鬆弛插入部之步驟;及一邊使上述基板移動旋轉機構進一步水平移動、一邊自上述噴嘴噴射噴射材,而去除鬆弛插入於上述基板鬆弛插入部之上述基板周緣部之薄膜層,並且藉由上述集塵機構抽吸該噴射材之步驟。 A blast processing method for removing a film layer of a peripheral portion of the substrate by the blast processing apparatus according to any one of claims 1 to 11, and comprising: by the substrate transfer mechanism a step of transporting the substrate to the upper side of the substrate moving and rotating mechanism; a positioning step for stopping the substrate conveyed to the upper side of the substrate moving and rotating mechanism at a specific position; and lowering the substrate carrying mechanism to transpose the substrate a step of moving the rotation mechanism to the substrate, and fixing the substrate to the substrate moving and rotating mechanism; and horizontally moving the substrate moving and rotating mechanism to loosely insert at least one side of the peripheral edge portion of the substrate into the substrate slack insertion mechanism of the substrate peripheral portion processing mechanism And a step of ejecting the ejecting material from the nozzle while moving the substrate moving and rotating mechanism further horizontally, and removing the thin film layer that is loosely inserted into the peripheral edge portion of the substrate in the substrate slack insertion portion, and is pumped by the dust collecting mechanism The step of sucking the spray material.
  13. 如請求項12之噴射加工方法,其進而包括:於去除上述基板周緣部之至少一邊之薄膜層後,藉由上述基板移動旋轉機構使該基板旋轉90度之步驟;將上述基板移動旋轉機構移動而將上述基板之與經去除薄膜層之周緣部之邊鄰接之至少一邊鬆弛插入於上述基板鬆弛插入部之步驟;及一邊將上述基板移動旋轉機構進一步水平移動一邊自上述噴嘴噴射噴射材,而去除鬆弛插入於該基板鬆弛插入部之周緣部之薄膜層,並且藉由上述集塵機構抽吸該噴射材之步驟。 The blasting method according to claim 12, further comprising: a step of rotating the substrate by 90 degrees by the substrate moving and rotating mechanism after removing the film layer on at least one side of the peripheral portion of the substrate; and moving the substrate moving rotating mechanism And inserting at least one side of the substrate adjacent to a side of the peripheral edge portion of the removed film layer into the substrate slack insertion portion; and ejecting the spray material from the nozzle while moving the substrate moving and rotating mechanism horizontally The step of relaxing the film layer inserted in the peripheral portion of the slack insertion portion of the substrate and sucking the spray material by the dust collecting mechanism is removed.
  14. 一種噴射加工方法,其特徵在於:其係用於藉由如請求項10之 噴射加工裝置而去除上述基板周緣部之薄膜層者,且包括:將上述基板搬送至上述基板移動旋轉機構之上方之步驟;用於使經上述基板搬送機構搬送至基板移動旋轉機構之上方之基板於特定之位置停止之定位步驟;將上述基板搬送機構下降而將上述基板轉置於上述基板移動旋轉機構,並且將該基板固定於基板移動旋轉機構之步驟;將上述基板移動旋轉機構水平移動而將上述基板之作為相對向之周緣部之第一加工邊分別鬆弛插入於上述基板鬆弛插入部之步驟;及一邊將上述基板移動旋轉機構進一步水平移動一邊自上述噴嘴噴射噴射材,而去除上述第一加工邊之薄膜層,並且藉由上述集塵機構抽吸於上述基板周緣部加工機構之內部產生之粉塵之步驟。 A jet processing method characterized in that it is used by claim 10 The blasting apparatus removes the thin film layer on the peripheral edge portion of the substrate, and includes: a step of transporting the substrate above the substrate moving and rotating mechanism; and a substrate for transporting the substrate transfer mechanism to the substrate moving rotating mechanism a positioning step of stopping at a specific position; a step of lowering the substrate transfer mechanism to transfer the substrate to the substrate moving and rotating mechanism, and fixing the substrate to the substrate moving rotating mechanism; and moving the substrate moving rotating mechanism horizontally a step of loosely inserting the first processed side of the substrate as a peripheral edge portion into the substrate slack insertion portion; and ejecting the spray material from the nozzle while moving the substrate moving and rotating mechanism horizontally to remove the first A step of processing the film layer on the side and sucking the dust generated inside the peripheral processing portion of the substrate by the dust collecting means.
  15. 如請求項14之噴射加工方法,其進而包括:藉由上述基板移動旋轉機構使經去除上述第一加工邊之薄膜層之基板旋轉90度之步驟;將上述基板移動旋轉機構水平移動而將與第一加工邊鄰接之第二加工邊分別鬆弛插入於上述基板周緣部加工機構之基板鬆弛插入部之步驟;及一邊將上述基板移動旋轉機構進一步水平移動一邊自上述噴嘴噴射噴射材,而去除上述第二加工邊之薄膜層,並且藉由上述集塵機構抽吸於上述基板周緣部加工機構之內部產生之粉塵之步驟。 The blasting method of claim 14, further comprising: a step of rotating the substrate on which the film layer of the first processed edge is removed by the substrate moving rotation mechanism by 90 degrees; and moving the substrate moving rotating mechanism horizontally a step of loosely inserting the second processed edge adjacent to the first processed edge into the substrate slack insertion portion of the substrate peripheral edge processing mechanism; and ejecting the sprayed material from the nozzle while moving the substrate moving and rotating mechanism horizontally And a step of sucking dust generated inside the peripheral processing portion of the substrate by the dust collecting means by the dust collecting means.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102267101A (en) * 2010-06-04 2011-12-07 新东工业株式会社 Apparatus for treating a plate-like member and method of treating the same

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AU2002344609A1 (en) * 2002-10-30 2004-05-25 Bando Kiko Co., Ltd. Glass pane machining device
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JP5321978B2 (en) * 2009-10-07 2013-10-23 新東工業株式会社 Continuous conveyor type shot peening apparatus and shot peening method

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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