JP6414926B2 - Blasting apparatus for processing substrate peripheral edge and blasting method using this apparatus - Google Patents

Description

  The present invention relates to a blasting apparatus, which is a processing apparatus for removing a thin film layer at the peripheral edge of a substrate having a thin film layer formed on the surface of a substrate, and processing of a substrate using the blasting apparatus Regarding the method.

  When the thin film layer is formed on the surface of the base material, the thickness of the thin film layer may be thicker than that of the intermediate portion at the peripheral edge of the substrate, or the thin film layer may reach the back surface.

  A thin film solar cell panel will be described as an example. In a thin film solar cell panel, a thin film layer in which a transparent electrode layer, a semiconductor layer, a metal layer, and the like are laminated is formed on the surface of a translucent substrate such as glass. The laminating step is performed by, for example, a gas phase reaction. In this case, the thin film layer may reach the back surface through the peripheral portion. The solar cell module is required to have insulation between the front surface and the back surface. In view of this, the inventors of the present application have proposed an apparatus for improving the insulation property by removing the thin film layer at the peripheral portion of the thin film solar cell panel using a blast processing technique.

WO2011 / 152073 pamphlet

  The apparatus described in Patent Document 1 can remove the thin film layer at the peripheral edge of the solar cell panel. However, with the urgent need to install solar cells as power generation, there is a need for a processing apparatus that can further improve productivity.

  The present invention is a blasting apparatus for removing an unnecessary thin film layer on a peripheral edge of a substrate on a substrate having a thin film layer formed on the surface, wherein the substrate loose insertion portion for loosely inserting the peripheral edge of the substrate is provided. A formed substrate peripheral edge processing chamber, and a nozzle that is arranged with a tip inserted into the substrate peripheral edge processing chamber and injects an injection material to the substrate peripheral edge loosely inserted into the substrate free insertion portion. And a substrate peripheral edge processing mechanism in which a dust collecting mechanism for sucking dust generated therein is communicated with the substrate peripheral edge processing chamber, and the substrate is placed relative to the nozzle. A substrate moving / rotating mechanism having a mechanism for horizontally moving and rotating the substrate, a substrate conveying mechanism for conveying the substrate above an initial stop position of the substrate moving / rotating mechanism, and lowering the substrate conveying mechanism, The substrate as a substrate moving and rotating mechanism Characterized in that it and a lifting mechanism for location. In the blasting apparatus of the present invention, the substrate moving and rotating mechanism that horizontally moves the substrate relative to the nozzle is a conventional processing apparatus (in the following description, “conventional processing apparatus”, unless otherwise specified) It is arranged at a position lower than that of the processing apparatus of Patent Document 1. That is, since the center of gravity of the substrate moving and rotating mechanism is lower than that of the conventional processing apparatus, even when the horizontal moving speed of the substrate is increased in order to improve productivity, it can move stably without vibration. Can do. As described above, according to the present invention, even when the processing speed is increased, blast processing can be performed stably, and the thin film layer on the peripheral edge of the substrate can be removed.

  In the blasting apparatus of the present invention, the nozzle may include a mechanism for sucking the spray material by a suction force generated inside the nozzle. In the blast processing apparatus of the present invention, since the nozzle is disposed at a lower position than the conventional processing apparatus, the distance between the nozzle and the injection material supply mechanism becomes long. For this reason, the suction force for sucking the propellant becomes small. That is, since the injection force for injecting a solid-gas two-phase flow from the injection nozzle is relatively increased, the processing capability is improved.

  In the blasting apparatus of the present invention, the nozzle is provided with an air nozzle for injecting compressed air, an injection material supply path for supplying the injection material, and a metal rigid material communicating with the supply path inside. A nozzle holder having a structure for sucking an injection material by a suction force generated in the mixing chamber, the nozzle holder being provided in the extension direction of the air nozzle through the mixing chamber. May be a feature. In the nozzle having the structure of the present invention, a negative pressure is generated in the mixing chamber in the nozzle holder by the compressed air jetted from the air nozzle, and this negative pressure sucks the spray material into the mixing chamber, and a solid gas is generated in the mixing chamber. A two-phase flow is formed, and this solid-gas two-phase flow is jetted from the jet nozzle. Since this nozzle can inject an injection material continuously, productivity is good.

  In the blast processing apparatus of the present invention, the injection material supply mechanism may further include a quantitative supply mechanism for supplying a predetermined amount of the injection material in communication with the nozzle. As a result, stable blasting can be performed, so that defective products due to insufficient processing do not occur.

The blasting apparatus of the present invention may further include a cleaning mechanism adjacent to the substrate peripheral edge processing mechanism. Thus, even if the spray material adheres to the substrate surface without being completely sucked by the substrate peripheral edge processing mechanism, it can be removed by the cleaning mechanism.
Further, in the blast processing apparatus of the present invention, the cleaning mechanism is disposed so as to face the surface of the substrate, and is disposed with a casing having an open lower end, a tip inserted into the casing, and the substrate. A cleaning nozzle that injects compressed air toward the head and a suction member that is provided in the casing and communicates with the dust collection mechanism may be provided. Due to the compressed air sprayed from the cleaning nozzle, the fine powder containing the spray material adhering to the substrate surface separates from the substrate surface and floats. The floating fine powder is sucked into the space in the casing by a suction mechanism. Thereby, the injection material adhering (residual) to the substrate surface can be removed.

  The blasting apparatus of the present invention may further include a housing that encloses the substrate peripheral edge processing mechanism, the substrate moving rotation mechanism, and the substrate transport mechanism. The substrate transport mechanism further includes a function of transporting the substrate into the housing and a function of transporting the substrate after removing an unnecessary thin film layer on the peripheral edge of the substrate to the outside of the housing. May be a feature. As a result, the number of substrate transport mechanisms is reduced, and the apparatus can be manufactured at low cost.

  The blasting apparatus of the present invention may further include a positioning mechanism for stopping the substrate transported above the substrate moving / rotating mechanism at a predetermined position. With such a positioning mechanism, the substrate can be processed with high accuracy.

  In the blast processing apparatus of the present invention, a pair of the substrate peripheral edge processing mechanisms are provided, and the substrate peripheral edge processing mechanisms are arranged with a predetermined interval between the substrate loose insertion portions facing each other. May be a feature. Since the peripheral portions of two sides of the substrate facing each other in parallel can be processed at the same time, the processing time can be shortened.

  Further, in the blasting apparatus of the present invention, the anti-scattering cover is disposed so as to face the substrate, the lower end is opened, the tip is inserted into the anti-scattering cover, and other than the peripheral edge of the substrate A substrate intermediate portion processing mechanism may further be provided that includes a nozzle that injects an injection material to the portion, and a suction member that is provided on the scattering prevention cover and is connected to the dust collection mechanism. . The scattering prevention cover and the dust collecting mechanism are communicated with each other by a suction member. The thin film layer at a portion (substrate intermediate portion) other than the peripheral portion of the substrate is removed by the spray material sprayed from the nozzle. Dust such as a spray material and fine particles (a spray material having a size that cannot be reused due to a collision with the removed thin film layer or the substrate) is sucked into the dust collection mechanism within the scattering prevention cover. Thus, the thin film layer inside the substrate can be removed by the substrate intermediate portion processing mechanism. By cutting the substrate from the center of the portion removed by the substrate intermediate portion processing mechanism, a plurality of substrates from which the peripheral portion has been removed can be obtained.

  Moreover, in the blast processing apparatus of the present invention, the substrate processed by the blast processing apparatus forms a thin film solar cell panel on a flat surface of a translucent base material (glass, resin (for example, polyethylene terephthalate resin), etc.). A thin film solar cell panel in which thin film layers (transparent electrode layer, semiconductor layer, metal layer, etc.) necessary for the above are laminated may be used. With the blast processing apparatus of the present invention, a solar cell panel having excellent insulation characteristics between the front surface and the back surface can be obtained.

The present invention is also a blasting method for removing a thin film layer at a peripheral portion of a substrate by a blasting apparatus, the step of transporting the substrate above the substrate moving and rotating mechanism by the substrate transport mechanism, and the substrate A positioning step for stopping the substrate transported above the moving and rotating mechanism at a predetermined position, and lowering the substrate transporting mechanism to place the substrate on the substrate moving and rotating mechanism and rotating the substrate to rotate the substrate. A step of fixing to the mechanism, a step of horizontally moving the substrate moving / rotating mechanism to loosely insert at least one side of the substrate peripheral portion into the substrate free-moving portion of the substrate peripheral portion processing mechanism, and the substrate moving / rotating mechanism. Further, the spray material is sprayed from the nozzle while being horizontally moved to remove the thin film layer of the substrate peripheral portion loosely inserted in the substrate free insertion portion of the substrate peripheral portion processing mechanism, and the spray material is A step of sucking in serial precipitator mechanism may be characterized in that it comprises.
Further, in the blast processing method of the present invention, after removing an unnecessary thin film layer on at least one side of the peripheral edge portion of the substrate, the substrate is rotated by 90 degrees by the substrate moving rotation mechanism, and the substrate moving rotation mechanism Moving the substrate horizontally to loosely insert at least one side adjacent to the edge of the peripheral edge from which the unnecessary thin film layer of the substrate has been removed, into the substrate insertion portion of the substrate peripheral edge processing mechanism, and moving the substrate While spraying the spray material from the nozzle while further horizontally moving the rotation mechanism, the unnecessary thin film layer at the peripheral portion inserted loosely into the substrate insertion portion of the substrate peripheral portion processing mechanism is removed, and the spray material And a step of sucking the dust with the dust collecting mechanism.
With the blast processing method of the present invention, the substrate moving and rotating mechanism for horizontally moving the substrate relative to the nozzle is located at a lower position than the conventional processing apparatus. That is, since the center of gravity of the substrate moving and rotating mechanism is lowered, even when the horizontal movement speed is increased in order to improve productivity, the substrate can be stably moved without vibration. As described above, according to the present invention, it is possible to perform blasting stably even when the horizontal movement speed of the substrate is increased to increase the processing speed, and the thin film layer on the peripheral edge of the substrate can be removed.

The present invention is also a blasting method for removing a thin film layer at the peripheral edge of the substrate by a blasting apparatus, the step of transporting the substrate above the substrate moving and rotating mechanism, and the substrate transporting mechanism by the substrate transporting mechanism. A positioning step for stopping the substrate transported above the moving and rotating mechanism at a predetermined position, and lowering the substrate transporting mechanism to place the substrate on the substrate moving and rotating mechanism and rotating the substrate to rotate the substrate. A step of fixing to a mechanism, a step of horizontally moving the substrate moving and rotating mechanism, and loosely inserting a first processed side as an opposing peripheral portion of the substrate into a substrate free insertion portion of the substrate peripheral portion processing mechanism, While the substrate moving and rotating mechanism is further moved horizontally, the spray material is sprayed from the nozzle to remove the thin film layer on the first processing side, and is generated inside the substrate peripheral edge processing mechanism. A step of sucking the dust in the dust collecting mechanism may be characterized in that it comprises.
Further, in the blasting method of the present invention, a step in which the substrate from which the thin film layer on the first processing side is removed is rotated by 90 degrees by the substrate movement rotation mechanism, and the substrate movement rotation mechanism is moved horizontally to perform first processing. A step of loosely inserting the second processing side adjacent to the side into the substrate insertion portion of the substrate peripheral portion processing mechanism, and spraying an injection material from the nozzle while further horizontally moving the substrate movement rotation mechanism, A step of removing the thin film layer on the second processed side and sucking dust generated inside the substrate peripheral portion processing mechanism by the dust collecting mechanism.
Since unnecessary thin film layers at the peripheral edges of two parallel sides facing each other can be removed at the same time, unnecessary thin film layers at the peripheral edge of the substrate can be removed in a short time.

  According to the present invention, it is possible to obtain a blasting apparatus and a blasting method in which the machining time is shorter than in the prior art and the productivity is improved.

It is explanatory drawing explaining 1st embodiment of this invention. 1A is a plan sectional view, and FIG. 1B is a front sectional view. It is explanatory drawing which shows the board | substrate peripheral part processing mechanism in 1st embodiment of this invention. 2A is a side view, FIG. 2B is a plan view, FIG. 2C is a schematic diagram for explaining a configuration of a substrate peripheral edge processing mechanism, and FIG. 2D is FIG. 2B. FIG. It is explanatory drawing which shows the nozzle in 1st embodiment of this invention. 3A is a front view, and FIG. 3B is a cross-sectional view taken along line AA in FIG. It is front sectional drawing explaining the cleaning mechanism in 1st embodiment of this invention. It is explanatory drawing for demonstrating the process of processing a board | substrate in 1st embodiment of this invention. 5A is a cross-sectional view from the front direction showing Step 1 and FIG. It is explanatory drawing for demonstrating the process of processing a board | substrate in 1st embodiment of this invention. 6A is a cross-sectional view from the front direction showing Step 3, and FIG. It is explanatory drawing for demonstrating the process of processing a board | substrate in 1st embodiment of this invention. 7A is a cross-sectional view from the front direction showing Step 5 and FIG. It is explanatory drawing which shows the board | substrate intermediate part process mechanism in 2nd embodiment of this invention. FIG. 8A is a front sectional view for explaining the substrate intermediate portion machining mechanism, and FIG. 8B is a plan sectional view for explaining the blasting apparatus in which the substrate middle portion machining mechanism is arranged. It is explanatory drawing explaining the state of the board | substrate processed with the blast processing apparatus of 2nd embodiment of this invention.

  An example of the blasting apparatus of the present invention will be described with reference to the drawings. Further, “up / down / left / right direction” in the description of the embodiment refers to a direction in the drawing unless otherwise specified.

  As shown in FIGS. 1 (A) and 1 (B), the blasting apparatus 10 of the first embodiment includes a pair of substrate peripheral edge processing units U, a substrate transport mechanism 14, an elevating mechanism 15, and a positioning mechanism. 16, a substrate moving and rotating mechanism 17, an injection material supply mechanism 18, a casing 11 that encloses these, and a control means (not shown) that controls operations of these mechanisms and the like. The substrate peripheral edge processing unit U includes a substrate peripheral edge processing mechanism 12 and a cleaning mechanism 13 adjacent to the left and right of the substrate peripheral edge processing mechanism 12 (advancing direction of the substrate S). Further, the housing 11 has a substrate carry-in port 11a which is an opening for carrying the substrate S into the blasting apparatus 10, and an opening for carrying out the blasted substrate S from the blasting apparatus 10. Are formed on the upper and lower wall surfaces of the figure, respectively.

  As shown in FIG. 2, the substrate peripheral portion processing mechanism 12 has an upper casing 12a that is a box whose bottom is open, and a cross-sectional area of a cross section that is open from the top and downward from the upper end. A hollow lower casing 12b, a hollow suction member 12c connected to the bottom of the lower casing 12b, and a spacer 12d for connecting the upper casing 12a and the lower casing 12b with a space therebetween. A substrate peripheral portion processing chamber and a nozzle N that injects an injection material toward the substrate S are provided. The lower end surface of the upper casing 12a and the upper end surface of the lower casing 12b have the same shape and are spaced apart.

At the lower end of the upper casing 12a and the upper end of the lower casing 12b, U-shaped flange portions F ₁ and F ₂ having substantially the same shape are respectively provided. The upper end surface and the lower end surface of the spacer 12d have substantially the same shape as the flanges F ₁ and F ₂ . By connecting the flanges F ₁ and F ₂ via the spacer 12d, the upper casing 12a and the lower casing 12b are connected, and a board loose insertion portion 12e that loosely inserts the peripheral edge of the substrate S is formed. The The distance between the board loose insertion portions 12e (the length in the vertical direction in FIG. 2A) is such that when the board S is loosely inserted, there is at least an appropriate gap in the vertical direction between the board S and the opening end. It needs to be selected to be formed. That is, the substrate S and the substrate loose insertion portion are prevented from contacting each other. If the gap is too small, the substrate S may come into contact with the open end and the substrate S may be damaged. If the gap is too large, the wind speed for sucking the outside air becomes small, so that dust (the spray material sprayed from the nozzle N and the fine particles such as the cutting powder of the substrate S generated by the collision of the spray material with the substrate S) is sufficient. Can not be sucked into. As a result, the dust leaks out of the substrate peripheral edge processing mechanism 12. Since the distance between the board insertion portions 12e is determined by the thickness of the spacer 12d, the thickness of the spacer 12d can be appropriately selected according to the thickness of the board S. In the present embodiment, the spacers are selected so that the distance between the front and back surfaces of the substrate S and the end surface of the substrate loose insertion portion 12e is 1.0 to 5.0 mm.

  The nozzle N is fixed by inserting an injection port which is a lower end into the upper casing 12a. The suction member 12c is connected to a dust collection mechanism (not shown) for sucking and collecting dust generated inside the substrate peripheral edge processing mechanism 12. The dust is sucked and collected by the dust collecting mechanism via the suction member 12c. Since the outside air is sucked from the board loose insertion portion 12e by the suction force of the dust collecting mechanism, an air flow flowing from the outside toward the inside is generated in the vicinity of the board loose insertion portion 12e. Thereby, dust does not leak out of the substrate peripheral edge processing mechanism 12 from the substrate loose insertion portion 12e.

  The shape of the injection port of the nozzle N is not particularly limited, but the width of the processing region M can be widened by arranging the long side perpendicular to the processing side of the substrate S as a rectangle. Inside the substrate peripheral edge processing mechanism 12, an airflow is generated that flows in the direction of the suction member 12 c, so that the dust can be removed by tilting so that the injection direction of the injection material from the nozzle N faces the substrate peripheral edge side. Suction can be efficiently performed from the suction member 12c. This angle may be such that the center line of the nozzle N is 30 to 70 degrees with respect to the substrate S. When the nozzle N is disposed at an angle, a member that can be fixed by tilting the nozzle N may be provided. For example, as shown in FIG. 2, a triangular prism-shaped nozzle fixing member 12f having a slope with a predetermined angle, a polygonal fixing member such as a pentagon, or the like may be used.

  The structure of the nozzle N is not particularly limited. If the injection material is sucked by the negative pressure generated in the nozzle N and mixed with the compressed air, the structure is injected as a solid-gas two-phase flow from the injection port. Good. As a specific example, as shown in FIG. 3, an air nozzle Na for introducing compressed air into the nozzle N, an injection nozzle Nb for injecting an injection material as a solid-gas two-phase flow, and the air nozzle Na A nozzle holder Nc that is inserted and fitted from the upper end, and the injection nozzle Nb is connected to the lower end. The air nozzle Na has a hollow shape with both ends opened, and has an inner diameter that decreases in the direction in which the compressed air flows (downward in the figure). The injection nozzle Nb is provided with a channel cross section having the same shape from the upper end to the lower end. The nozzle holder Nc may be provided with a mixing chamber Ne and an injection material supply path (supply port) Nd communicating with the mixing chamber Ne.

  The injection material supply path Nd is connected to the injection material supply mechanism 18 disposed above the nozzle N via a hose H. The injection material supply mechanism 18 includes a hopper 18a for storing the injection material, and a fixed amount supply mechanism 18b for continuously taking out (cutting out) a predetermined amount from the hopper. If the predetermined amount of the injection material can be stably taken out only by the hopper 18a, the fixed amount supply mechanism 18b may not be provided. You may select the fixed_quantity | feed_rate supply mechanism 18b from well-known methods, such as a table feeder and a screw feeder. In the present embodiment, a screw feeder is used.

  A compressed air supply mechanism (not shown) is connected to the upper end of the air nozzle Na via a hose (not shown). When the compressed air supply mechanism is operated to inject compressed air into the mixing chamber Ne, which is the space inside the nozzle N, a negative pressure is generated in the mixing chamber Ne. The injection material taken out from the injection material supply mechanism 18 disposed above the nozzle N passes through the injection material supply path Nd by the negative pressure and is sucked into the mixing chamber Ne. The sucked injection material is mixed with compressed air in the mixing chamber Ne, and is injected from the injection nozzle Nb as a solid-gas two-phase flow.

  The shape of the injection port which is the lower end of the injection nozzle Nb may be circular or rectangular. In the present embodiment, the shape of the injection port is a rectangle, and the long side is disposed in a direction orthogonal to the processing side. Thereby, a wide width can be processed.

  In a blasting device (so-called pressurization type) having a mechanism for storing the spray material in a pressurized tank and supplying the spray material to the nozzle by pressurizing the pressure tank, the time during which blasting can be performed continuously is the pressure tank. Limited by capacity. On the other hand, the blast processing apparatus using the nozzle N of the present embodiment does not require the above-described pressurized tank, and can store the spray material under the atmospheric pressure and supply it to the nozzle N. The injected spray material can be used (injected) again after being separated by a separation mechanism as described later. That is, since the injection material can be circulated and injected, continuous blasting can be performed. In addition, since a predetermined amount of the spray material can be stably supplied by the spray material supply mechanism 18, stable blasting can be performed. Moreover, in this embodiment, since the nozzle N can be arrange | positioned in the position lower than the conventional blast processing apparatus, its processing capability is high compared with the conventional blast processing apparatus. The pressure of the compressed air supplied from the air nozzle Na to the inside of the nozzle N is decomposed into an injection force from the injection nozzle Nb and a generation force of the suction force of the injection material. When the injection material supply mechanism 18 is disposed above the nozzle N and the distance between the injection material supply mechanism 18 and the nozzle N is increased, the suction force of the injection material is reduced. As a result, since the injection force from the injection nozzle Nb increases, the processing capability increases.

  The injection material and the injection pressure are selected so that unnecessary thin film layers can be satisfactorily removed and other thin film layers are not damaged. The propellant is not particularly limited as long as it is generally used for blasting. For example, ceramic-based abrasive grains and grids (alumina-based, silicon carbide-based, zirconia-based, etc.), metal-based shots and cut wires and grids (iron-based, stainless-based, non-ferrous based, etc.), glass-based beads or It can be selected from powder, resin-based shots (nylon resin, melamine resin, urea resin, etc.) and plant-based shots (walnut, peach, apricot, etc.). Moreover, the particle diameter of an injection material should just be able to inject from the nozzle N stably without a pulsation etc., for example, can be selected from the range of 0.01-0.6 mm, desirably 0.02-0.06 mm. The injection pressure can be selected from the range of 0.2 to 0.8 MPa, desirably 0.3 to 0.6 MPa.

  Two of the substrate peripheral portion processing mechanisms 12 are arranged so that two opposing sides (upper and lower sides in FIG. 1A) of the substrate S are loosely inserted. Specifically, the board free-moving portions 12e of the board peripheral edge processing mechanism 12 are arranged so as to face each other. An interval adjusting mechanism (not shown) for adjusting the distance between the substrate peripheral edge processing mechanisms 12 according to the size of the substrate S is connected to the substrate peripheral edge processing mechanism 12. The substrate peripheral edge processing mechanism 12 can be moved in the vertical direction in FIG.

  The cleaning mechanism 13 connected to the substrate peripheral edge processing mechanism 12 will be further described with reference to FIG. In FIG. 4, the traveling direction of the substrate S is the left-right direction. The cleaning mechanism 13 includes a casing 13a which is a box having a lower end opened, a cleaning nozzle 13b disposed in the center of the ceiling surface, and a cylindrical suction member 13c opened at both ends. The cleaning nozzle 13b is connected to the compressed air supply mechanism, and an injection port which is a lower end (tip) is inserted and fixed inside the casing 13a. The suction member 13c is connected to the ceiling surface of the casing 13a so that one end thereof is positioned on the left and right of the cleaning nozzle 13b (that is, the traveling direction of the substrate S), and the other end is connected to the dust collecting mechanism via a hose. Are connected. Thereby, the inner space of the casing 13a communicates with the dust collecting mechanism.

  The cleaning mechanism 13 is arranged such that an appropriate gap is formed between the lower end of the casing 13a and the substrate S when the substrate S passes below. When the substrate S to which dust adheres passes under the cleaning mechanism 13, the compressed air is sprayed toward the substrate S from the cleaning nozzle 13b to float the dust away from the surface of the substrate S, and this dust is collected by the dust collector. The dust on the surface of the substrate S is removed by suction from the suction member 13c. In the vicinity of the lower end portion of the casing 13a, since the outside air is sucked through a gap provided between the casing 13a and the substrate S, an airflow that flows from the outside to the inside of the casing 13a is generated. Therefore, dust does not leak out of the cleaning mechanism 13. However, if the gap between the lower end of the casing 13a and the substrate S is too small, the substrate S may come into contact with the lower end of the casing 13a and the substrate S may be damaged. If the interval is too large, the wind speed for sucking outside air becomes small, so that dust scattered inside the cleaning mechanism 13 cannot be sucked sufficiently. As a result, the dust leaks out of the cleaning mechanism 13. For this reason, the gap needs to be set in a range where the substrate S does not come into contact with the casing 13a and the suction force is not impaired. In the present embodiment, the interval (gap) between the surface of the substrate S and the lower end of the casing 13a is set to 0.5 to 4.5 mm.

  In order to efficiently remove the dust adhering to the surface of the substrate S, means for weakening the adhesive force together with the compressed air (some moisture, electrostatic remover, ions or radicals, etc.) may be sprayed from the cleaning nozzle 13b. . Alternatively, high-speed pulsed air may be blown from the cleaning nozzle 13b (ultrasonic air blow). In this embodiment, ultrasonic air blow is used.

  The shape of the ejection port of the cleaning nozzle 13b is not particularly limited, and may be appropriately selected such as a circle or a rectangle.

  The substrate transport mechanism 14 includes a plurality of transport rollers 14a arranged in parallel with each other at equal intervals, and a gantry 14b that supports the transport rollers 14a. The transport roller 14a includes a roller member 14c for transporting the substrate S, and a shaft 14d serving as a rotation shaft of the roller member 14c. The roller members 14c are provided at predetermined intervals along the longitudinal direction of the shaft 14d, except for the outermost member. The roller members 14c are arranged so that the roller members 14c of the adjacent transport rollers 14a are staggered with respect to the transport direction (downward in FIG. 1 (A)), except for the outermost members. Has been. By arranging the roller members 14c in a staggered manner, the straightness when the substrate S is transported is improved.

  The shaft 14d of each transport roller 14a is rotatably supported by the gantry 14b via a bearing 14e. The shaft 14d is connected to a rotation mechanism (not shown) such as a motor. Since the transport roller 14a is rotationally driven by rotating the rotation mechanism (in FIG. 1A, the upper surface rotates downward), the transport force can be transmitted to the substrate S by the roller member 14c. .

  The contact member that contacts the substrate S and transmits the conveying force to the substrate S in the roller member 14c is preferably made of a closed-cell structure urethane resin, and the hardness of the urethane resin is 50-60 in JIS-A. It is more preferable to set the hardness to a level (specified in JIS K6253). For example, when the substrate S is made of a material that is easily damaged, such as glass or resin, if the dust enters between the substrate S and the transport roller 14c, the substrate S is damaged by the dust when the substrate S is transported. As described above, when the contact member is made of urethane resin having a closed cell structure, even if dust enters between the substrate S and the transport roller 14c, it prevents the dust from being pressed against the substrate S more than necessary. Therefore, it is possible to prevent the substrate S from being damaged.

  An elevating mechanism 15 is connected to the gantry 14b, and the elevating mechanism 15 can move the conveying roller 14a up and down (vertical direction with respect to the paper surface in FIG. 1A and up and down direction in FIG. 1B). . The raising / lowering mechanism can be selected from known methods such as a cylinder driven by hydraulic pressure, pneumatic pressure, or electricity, an electric slider provided with a ball screw or a belt, a rack and pinion, and the like. In this embodiment, a cylinder (air cylinder) driven by air pressure is used.

  The positioning mechanism 16 has a first fixing member 16a disposed on the transport direction side (downward in FIG. 1A) with respect to the transported substrate S, and one side side adjacent to the transport direction side side ( 1A includes a second fixing member 16b disposed on the left side and an adjustment member 16c disposed on the other side (rightward in FIG. 1A). The first fixing member 16a is fixed at a position for setting the position of the lower side of the substrate S, and the second fixing member 16b is fixed at a position for setting the position of the left side of the substrate S. The adjustment member 16c is connected to the advance mechanism 16d, and can be advanced in the left direction of the drawing by the advance mechanism 16d. The substrate S loosely inserted from the substrate carry-in port 11a and coming into contact with the upper surface of the carrying roller 14a is carried downward by the substrate carrying mechanism 14 in FIG. When transported to a predetermined position, the lower side of the substrate S collides with the first fixing member 16a and does not advance further. Next, the adjustment member 16c moves forward to contact the right side of the substrate S. The adjustment member 16c is advanced and pressed to move the substrate S to the left, and the left side of the substrate S comes into contact with the second fixing member 16b. Through the above-described steps, the substrate S is above a later-described mounting table 17a stopped at the initial stop position, and the center point of the substrate S is on the vertical extension line of the axis of rotation of the mounting table 17a. Positioning is performed so as to be positioned. The first fixing member 16a, the second fixing member 16b, and the adjusting member 16c are preferably made of a soft material because they come into contact with the substrate S. However, if the hardness is too low, the positioning accuracy is deteriorated, so that the substrate S is not damaged. It is necessary to have a degree of hardness. In this embodiment, polyethylene terephthalate (PET) resin is used. Further, the advance mechanism 16d may be selected from known methods such as a cylinder driven by hydraulic pressure, air pressure, or electricity, an electric slider including a ball screw, a belt, or the like, a rack and pinion, and the like. In this embodiment, an air cylinder is used.

  The substrate moving / rotating mechanism 17 includes a mounting table 17a for mounting and fixing the substrate S, a traveling mechanism 17b for moving the mounting table 17a in the left-right direction, and a rotating mechanism for rotating the mounting table 17a. 17c. The placement table 17a can be placed on the substrate S, and the substrate S does not have to move on the placement table 17a when moving by the traveling mechanism 17b. Therefore, a mechanically fixed structure, a sheet having a high friction coefficient, or the like It can be selected from known methods such as arranging In the present embodiment, a plurality of suction pads connected to a suction mechanism (not shown) such as a vacuum pump are arranged on a flat plate, and the suction mechanism is activated after the substrate S is placed on the suction pad. The substrate S is brought into close contact with the suction pad by a suction force. The placement table 17a is disposed below the transport roller 14a when the substrate S is transported by the substrate transport mechanism 14. As will be described later, in order to place the substrate S on the placement table 17a, the transport roller 14a is lowered. Therefore, the mounting table 17a is configured not to contact when the transport roller 14a is lowered.

  In order to process the substrate S, the traveling mechanism 17b can move the mounting table 17a on which the substrate S is mounted in the left-right direction. When the substrate S moves, it must be moved so that the substrate S does not come into contact with the end portion of the substrate free-insertion portion 12e of the substrate peripheral portion processing mechanism 12 and the lower end of the cleaning mechanism 13. Further, if the substrate S is not moved at a constant speed, it causes processing unevenness. The travel mechanism 17b does not vibrate the substrate S in the vertical direction in FIG. 1B, and can move in the left-right direction at a constant speed when the substrate S passes through the substrate peripheral edge processing mechanism 12. The structure is not particularly limited. For example, it can be selected from known methods such as an electric slider provided with a ball screw, a belt, etc., a rack and pinion, a self-propelled carriage, and the like. In the present embodiment, an electric slider provided with a belt is used. In addition, when an unnecessary impact is applied to the substrate S at the start and stop of the movement from the initial stop position, it is possible to control the speed at the start and stop by using an inverter or the like that can adjust the moving speed. preferable.

  The rotation mechanism 17c rotates the mounting table 17a by 90 degrees about the center of the upper surface of the mounting table 17a in FIG. Further, since the substrate S is mounted on the mounting table 17a, when vibration or centrifugal force is strongly applied to the substrate S when the mounting table 17a is rotated, the position of the substrate S is more than the mounting table 17a. There is a risk of shifting. Thus, the rotation mechanism 17c only needs to be able to rotate without applying strong vibration or impact force to the substrate S, and the structure is not particularly limited. For example, it can select from well-known methods, such as a motor and a cylinder. Further, when an unnecessary impact is applied to the substrate S at the start and stop of rotation, it is preferable to use a device that can adjust the rotation speed and control the speed at the start and stop. In this case, for example, a direct drive motor, a servo motor, a cylinder (for example, a servo cylinder) whose expansion / contraction speed can be adjusted can be selected from known methods. In this embodiment, a direct drive motor is used.

  Next, the process of removing the thin film layer at the peripheral edge of the substrate S with the blast processing apparatus of this embodiment will be further described with reference to FIGS. 4 to 6 are sectional views as seen from the front direction. Here, a case where a rectangular thin film solar cell panel substrate is processed will be described as an example.

(Preparation process)
Conditions for processing the substrate S satisfactorily (the dimension of the substrate S, the moving speed of the substrate S, the spray pressure, the number of scans, the processing width, etc.) are input to the control means. After the input, the processing start button is turned ON to start processing under the input conditions, and the processing is automatically completed. Here, the control means only needs to be able to input and control the operation of the blast processing apparatus 10, for example, a motion controller such as a programmable logic controller (PLC) or a digital signal processor (DSP), a high-function mobile terminal, a high-function A mobile phone or the like may be used.

(Process 1; import process)
After the substrate transport mechanism 14 is activated, the substrate S is loosely inserted from the substrate carry-in port 11a. Here, the case where it is loosely inserted from the long side direction will be described as an example. The substrate S loosely inserted from the substrate carry-in port 11a is advanced by the substrate transfer mechanism 14. And it collides with the 1st fixing member 16a, and positioning of the conveyance direction end is completed. Thereafter, the adjustment member 16c moves forward and moves the substrate S to the left. Thereafter, the left side of the substrate S collides with the second fixing member 16b, and the positioning in the left-right direction is completed. When the positioning of the substrate S is completed, the substrate transport mechanism 14 stops. The first fixing members 16a are arranged so that the distance between the first fixing members 16a is equal to or longer than the length of the short side of the substrate so as not to collide with the substrate S after the completion of processing. (Refer to FIG. 5 (A))

(Process 2; Placement process)
The raising / lowering mechanism 15 operates to lower the substrate transport mechanism 14. Below the substrate S, the mounting table 17a of the substrate moving and rotating mechanism 17 is stopped (initial stop position). When the substrate transport mechanism 14 is positioned below the placement table 17a, the substrate S is transferred from the substrate transport mechanism 14 to the placement table 17a. When the substrate S is transferred to the placement table 17a, the suction mechanism is activated to fix the substrate S on the placement table 17a. In this way, the substrate S is such that the first processed sides, which are long sides facing each other, are positioned in the vertical direction, and the plane center of the substrate S coincides with the axis when the mounting table 17a rotates. It is mounted on the mounting table 17a and fixed. (See Fig. 5 (B))

(Step 3: Processing step of the first processing side)
The pair of substrate peripheral edge processing units U (the substrate peripheral edge processing mechanism 12 and the cleaning mechanism 13 adjacent to the left and right of the substrate peripheral edge processing mechanism 12) are operated by the interval adjusting mechanism. It moves in the vertical direction in FIG. Thereby, the space | interval between board | substrate peripheral part processing units U is adjusted. Next, the dust collecting mechanism is activated to suck the inside of the substrate peripheral edge processing mechanism 12 and the cleaning mechanism 13. Further, the compressed air supply mechanism and the injection material supply mechanism 18 are operated, the injection material is injected from the nozzle N, and the compressed air is injected from the cleaning nozzle 13b. Thereafter, the traveling mechanism 17b is operated, and the placement table 17a is moved in the right direction. And the 1st process edge of the board | substrate S is loosely inserted in the board | substrate loose insertion part 12e of the board | substrate peripheral part process mechanism 12, and passes. The first processed side that is loosely inserted into the board free insertion portion 12e passes under the nozzle N, whereby the thin film layer on the first processed side is removed. Dust may remain on the surface of the substrate S that has passed through the substrate peripheral edge processing mechanism 12 without being completely sucked. This dust is removed by passing below the cleaning mechanism 13 adjacent to the right side of the substrate peripheral edge processing mechanism 12. In addition, as described above, since the center of gravity of the substrate S can be lowered as compared with the conventional blast processing apparatus, the vibration in the vertical direction is reduced, and the substrate S can be moved stably. (See FIG. 6 (A))

(Process 4; rotation process)
When the entire length of the first processed side passes through the substrate peripheral edge processing unit U and the substrate S advances to a predetermined position on the right side (outward path stop position), the operation of the traveling mechanism 17b is stopped. After the stop, the rotation mechanism 17c operates to rotate the substrate S by 90 degrees so that the second processing sides (short sides facing each other) adjacent to the first processing side are positioned in the vertical direction. Further, the interval adjusting mechanism is operated, and the one substrate peripheral edge processing unit U is moved downward in the heavy direction in FIG. Thereby, the space | interval between board | substrate peripheral part processing units U is adjusted. (Refer to FIG. 6 (B))

(Step 5: Machining step of the second machining side)
The travel mechanism 17b is activated, and the substrate S and the placement table 17a are moved in the left direction. Then, the second processing side is loosely inserted into the substrate free-moving portion 12e of the substrate peripheral edge processing mechanism 12 and passes therethrough. The second processed side that is loosely inserted into the board insertion portion 12e passes below the nozzle N, whereby the thin film layer on the second processed side is removed. Dust may remain on the surface of the substrate S that has passed through the substrate peripheral edge processing mechanism 12 without being completely sucked. This dust is removed by passing under the cleaning mechanism 13 adjacent to the left side of the substrate peripheral edge processing mechanism 12. Then, when the entire length of the second processing side passes through the substrate peripheral edge processing unit U and the placement table 17a advances to a predetermined position (initial stop position) on the left side, the operation of the traveling mechanism 17b is stopped. (Refer to FIG. 7 (A))

(Process 6; Unloading process)
After the operation of the traveling mechanism 17b is stopped, the operation of the injection material supply mechanism 18 and the compressed air supply mechanism is stopped, and the injection of the injection material and the compressed air is stopped. Thereafter, the operation of the dust collecting mechanism is stopped. Further, the operation of the suction mechanism is stopped, and the fixation of the substrate S is released. Next, the elevating mechanism 15 operates to raise the substrate transport mechanism 14, and the substrate S is transferred onto the transport roller 14a. When the substrate transport mechanism 14 is raised to a predetermined position, the operation of the lifting mechanism 15 is stopped. Thereafter, the substrate transport mechanism 14 is operated by the operation of the rotation mechanism, and the substrate S advances. And it is carried out from the board | substrate carry-out exit 11b. As described above, since the substrate S can be carried in and out by the same substrate transport mechanism 14, the blasting apparatus can be manufactured at a lower cost than the conventional blasting apparatus. (Refer to FIG. 7 (B))

  By repeating Step 1 to Step 5, a plurality of substrates S can be processed continuously. When processing a plurality of substrates S continuously, it is not necessary to stop the operation of the injection material supply mechanism 18, the compressed air supply mechanism, and the dust collection mechanism in Step 5.

  When an unnecessary thin film layer cannot be completely removed by a single process, such as when the thin film layer of the substrate S is hard, the number of scans may be increased by repeating Step 3 to Step 5. When the number of scans is increased, the substrate S may be rotated 90 degrees by operating the rotation mechanism 17c before performing Step 3 again.

  The injection material sucked and collected by the dust collecting means is sent to a separation mechanism (not shown) such as a cyclone, separated into reusable injection material and other powders, and the reusable injection material is Then, it is sent to the injection material supply mechanism 18 and is again injected from the nozzle N.

  The blast processing apparatus 10 of this embodiment includes a pair of substrate peripheral edge processing mechanisms 12, but the number of substrate peripheral edge processing mechanisms 12 may be increased or decreased according to a desired processing time. For example, when one substrate peripheral portion processing mechanism 12 is disposed (for example, disposed only in the upper part in FIG. 1A), the number of scans (the number of executions of step 3 to step 5) is set to two or more. Processing can be completed. In this configuration, the processing time of the substrate becomes long, but the manufacturing cost of the blast processing apparatus can be reduced. Further, when the number of substrate peripheral edge processing mechanisms 12 is increased with respect to one side, the processing capability is improved, so that the moving speed of the substrate S can be increased. As a result, the processing time of the substrate S can be shortened, so that productivity is improved.

  In the present embodiment, one nozzle N is arranged in one substrate peripheral edge processing mechanism 12, but a plurality of nozzles may be arranged. Since the processing capability is improved by increasing the number of nozzles, the processing time can be shortened.

  The results of removing unnecessary thin film layers on the peripheral edge of the substrate S using the blast processing apparatus of the first embodiment will be described as examples. In the examples, an unnecessary thin film layer at the periphery was removed from the thin film solar cell panel of 1100 mm × 1400 mm × thickness 3 mm using the blast processing apparatus of the first embodiment under the conditions shown in Table 1. The thin film solar cell panel used in the examples is a thin film layer necessary for forming a thin film solar cell panel (hereinafter referred to as a panel) on the plane of a translucent substrate (a glass substrate in this example). (Transparent electrode layer, optical semiconductor layer, metal layer, etc.) are laminated. Moreover, the example which performed the same process using the blasting apparatus (conventional blasting apparatus) of patent document 1 is Comparative Example 1, the panel moving speed is 200 mm / sec, and other conditions are comparative examples. An example in which the panel is processed in the same manner as 1 will be described as Comparative Example 2. The target processing width (the width from the peripheral edge from which the thin film layer was removed) was 16 mm.

  The processed panel was observed and evaluated with a scanning electron microscope (SEM). In the example, no thin film layer remained in the processing region M, and no scratch was found in the thin film layer other than the processing region M. In Comparative Example 1, the thin film layer remained in the processing region M. In Comparative Example 2, no thin film layer remained in the processed region, and no scratch was found in the thin film layer other than the processed region. As a result, the conventional blasting apparatus cannot sufficiently remove the unnecessary thin film layer on the panel under the same conditions as the blasting apparatus of the present embodiment, that is, the blasting apparatus of the present embodiment is not subjected to the conventional blasting process. This indicates that the machining capability is higher than that of the apparatus, and that machining can be performed at a machining speed of 1.25 times.

  Next, a case where the substrate intermediate portion processing unit U ′ including the substrate intermediate portion processing mechanism 19 and the cleaning mechanism 13 adjacent to the substrate intermediate portion processing mechanism 19 is disposed between the pair of substrate peripheral portion processing mechanisms 12. This will be described as a second embodiment. Here, an example is shown in which one substrate intermediate portion processing unit U ′ is provided at the center of a pair of substrate peripheral portion processing units U and the substrate S is processed simultaneously by the substrate peripheral portion processing unit U and the substrate intermediate portion processing unit U ′. Explained. With this configuration, the blasted substrate S is processed into the first processed side, the second processed side, and the side formed between the sides so as to face the first processed side and the second processed side. Region M is formed. Then, by cutting the center of the processing region M formed by the substrate intermediate portion processing mechanism 19, four substrates S 'from which unnecessary thin film layers at the peripheral portion have been removed can be obtained. Since the blasting apparatus of the second embodiment is different only in that the substrate intermediate part processing unit is arranged, only the differences from the first embodiment will be described here.

  As shown in FIG. 8A, the substrate intermediate portion processing mechanism 19 has a scattering prevention cover 19a that is a box having a lower end opened, a nozzle 19b disposed in the center of the ceiling surface, and both ends opened. A cylindrical suction member 19c. The nozzle 19b is fixed so that the injection port as the lower end is positioned inside the scattering prevention cover 19a, and is connected to the injection material supply mechanism 18 and the compressed air supply mechanism. The suction member 19c is connected to the ceiling surface of the scattering prevention cover 19a so as to be positioned on the left and right of the nozzle 19b (that is, the traveling direction of the substrate S), and the other end is connected to the dust collecting mechanism via a hose. Yes. Thereby, the space inside the scattering prevention cover 19a and the dust collecting mechanism are in communication. The cross-sectional shape of the scattering prevention cover 19a is not particularly limited, and may be a polygon such as a quadrangle or a circle.

  The nozzle 19b preferably has the same structure as the nozzle N. However, it is preferable that the width of the nozzle 19b is wider than the width of the nozzle N. As described above, the processed substrate S cuts the center of the processing region M processed by the substrate intermediate portion processing mechanism 19, so the width of the processing region by the substrate intermediate portion processing mechanism 19 is the first processing side and the second processing edge. It is preferable to make it wider than the processing width of the two processing sides. For example, the width of the injection port of the nozzle 19b is selected so that the width of the processing area M by the substrate intermediate processing mechanism 19 is about twice the width of the first processing side and the second processing side. The nozzle 19b is disposed to face the surface of the substrate S without contacting the surface.

  The substrate intermediate portion processing mechanism 19 is disposed such that an appropriate gap is formed between the lower end of the scattering prevention cover 19a and the substrate S when the substrate S passes below. That is, the lower end of the scattering prevention cover 19a and the substrate S are arranged so as not to contact each other. In the vicinity of the lower end portion of the scattering prevention cover 19a, outside air is sucked through a gap provided between the scattering prevention cover 19a and the substrate S, so that an airflow flowing from the outside to the inside of the scattering prevention cover 19a is generated. Yes. Therefore, dust does not leak out of the substrate intermediate part processing mechanism 19. However, if the distance between the lower end of the scattering prevention cover 19a and the substrate S is too small, the substrate S may come into contact with the lower end of the scattering prevention cover 19a and be damaged. If the interval is too large, the wind speed for sucking the outside air becomes small, so that the dust scattered inside the substrate intermediate portion processing mechanism 19 cannot be sufficiently sucked. As a result, the dust leaks out of the substrate intermediate portion processing mechanism 19. If the gap is too narrow, the substrate S may come into contact with the lower end of the scattering prevention cover 19a and be damaged. Therefore, the gap needs to be set in a range where the substrate S does not come into contact with the scattering prevention cover 19a and the suction force is not impaired. In 2nd embodiment, it set so that the space | interval (gap) between the surface of the board | substrate S and the lower end of the said scattering prevention cover 19a might be set to 1.0-5.0 mm.

  Similar to the substrate peripheral edge processing mechanism 12, the cleaning mechanism 13 is adjacent to the left and right sides of the substrate intermediate processing mechanism 19. When dust adheres to the surface of the substrate S that has passed through the substrate intermediate portion processing mechanism 19, the dust can be removed by the cleaning mechanism 13.

  A substrate intermediate portion processing unit U ′ having a substrate intermediate portion processing mechanism 19 and a cleaning mechanism 13 adjacent to the central processing chamber 19 is formed between a pair of substrate peripheral portion processing units U as shown in FIG. It arrange | positioned so that it might be located in the center. And when processing a board | substrate according to the process 1-process 6 described in said 1st embodiment, while attracting | sucking the inside of the scattering prevention cover 19a of the board | substrate intermediate part process unit U 'and the cleaning mechanism 13 with the said dust collection mechanism. The substrate S is processed by spraying the spray material from the nozzle 19b and the compressed air from the cleaning nozzle 13b. By this process, the process of removing the unnecessary thin film layers of the two straight lines located at the peripheral portions of the four sides and the centers of those sides and facing the four sides is completed (see FIG. 9A). After the processing is completed, the center of the processing region processed by the substrate intermediate portion processing mechanism 19 is cut to obtain four substrates S ′ from which unnecessary thin film layers at the peripheral portion are removed ( (See FIG. 9B).

  A plurality of substrate intermediate processing mechanisms 19 may be arranged. For example, a substrate S as shown in FIG. 9C can be obtained by arranging two substrate intermediate portion processing mechanisms 19 between a pair of substrate peripheral portion processing units U and performing the same processing. In addition, regardless of the number of substrate intermediate portion processing mechanisms 19, the substrate intermediate portion processing mechanism 19 performs processing only in either step 3 or step 5, so that the substrate S as shown in FIG. (In FIG. 9D, the injection material is injected from the nozzle 19b of the substrate intermediate portion processing mechanism 19 for processing only in the step 5).

  In the examples, the processing of the thin film solar cell panel has been described. However, the blast processing apparatus of the present invention is preferably used in addition to the thin film solar cell panel as long as it is an application for removing an unnecessary thin film layer on the peripheral portion of the substrate. Can do.

DESCRIPTION OF SYMBOLS 10 Blast processing apparatus 11 Housing | casing 11a Substrate carrying-in port 11b Substrate carrying-out port 12 Substrate peripheral part processing mechanism 12a Upper casing 12b Lower casing 12c Suction member 12d Spacer 12e Substrate loose insertion part 12f Nozzle fixing member 13 Cleaning mechanism 13a Casing 13b Cleaning nozzle 13c Suction member 14 Substrate transport mechanism 14a Transport roller 14b Mount 14c Roller member 14d Shaft 14e Bearing 15 Lifting mechanism 16 Positioning mechanism 16a First fixed member 16b Second fixed member 16c Adjusting member 16d Adjusting mechanism 17 Substrate moving rotating mechanism 17a Mounting table 17b Traveling mechanism 17c Rotating mechanism 18 Injection material supply mechanism 18a Hopper 18b Fixed amount supply mechanism 19 Substrate intermediate portion processing mechanism 19a Spattering prevention cover 19b Nozzle 19c Suction member _{1, F 2} flange portion H hose M processing region N nozzles S substrate S '(after cutting) substrate U substrate edge machining unit U' substrate intermediate section machining unit

Claims (9)

In a substrate having a thin film layer formed on the surface, a blasting apparatus for removing an unnecessary thin film layer on the peripheral edge of the substrate,
A substrate peripheral portion processing chamber in which a substrate free insertion portion for loosely inserting the substrate peripheral portion is formed, and a tip is inserted into the substrate peripheral portion processing chamber and is loosely inserted into the substrate free insertion portion. A nozzle for injecting an injection material to the peripheral edge of the substrate, the nozzle having a mechanism for sucking the injection material by a suction force generated inside the nozzle, and a dust collection mechanism for sucking the dust generated inside A substrate peripheral edge processing mechanism communicated with the substrate peripheral edge processing chamber;
An injection material supply mechanism disposed above the nozzle and connected to the nozzle via a hose;
A substrate moving / rotating mechanism including a mechanism on which the substrate is placed, the substrate is moved horizontally relative to the nozzle, and the substrate is rotated;
A substrate transport mechanism for transporting the substrate above an initial stop position of the substrate moving rotation mechanism;
An elevating mechanism coupled to the substrate transport mechanism, for lowering the substrate transport mechanism, and for transposing the substrate to a substrate moving and rotating mechanism stopped below the substrate;
A blasting apparatus comprising: The blast processing apparatus according to claim 1 , wherein the injection material supply mechanism further includes a fixed amount supply mechanism for supplying a predetermined amount of the injection material in communication with the nozzle. Blasting machine according to claim 1 or 2, further comprising a cleaning mechanism that is adjacent to the peripheral portion of the substrate processing mechanism. A housing that encloses the substrate peripheral edge processing mechanism, the substrate moving rotation mechanism, and the substrate transport mechanism;
The substrate transport mechanism further includes a function of transporting the substrate into the housing and a function of transporting the substrate after removing the thin film layer at the peripheral edge of the substrate to the outside of the housing. The blasting apparatus according to any one of claims 1 to 3 . The substrate peripheral portion processing mechanism includes a pair of substrate peripheral portion processing mechanisms, and the substrate peripheral portion processing mechanisms are arranged at predetermined intervals with each of the substrate loose insertion portions facing each other. The blasting apparatus according to any one of 4 . A scattering prevention cover that is disposed so as to face the substrate and that has a lower end opened, and a nozzle that is disposed with a tip inserted into the scattering prevention cover and that ejects an injection material to a portion other than the peripheral edge of the substrate. If the provided scattering prevention cover any of claims 1 to 5, characterized in that the substrate intermediate portion processing mechanism and a suction member connected to the dust collecting mechanism is further arranged 1 The blasting machine described in 1. The substrate processed by the blast processing apparatus is a thin film solar cell panel in which a thin film layer for forming a thin film solar cell panel is laminated on a plane of a translucent base material. Item 7. The blasting apparatus according to any one of Items 6 above. A substrate peripheral portion processing chamber in which a substrate free insertion portion for loosely inserting a substrate peripheral portion of a substrate on which a thin film layer is formed is formed, and a tip is inserted and disposed inside the substrate peripheral portion processing chamber; A nozzle for injecting an injection material to the peripheral edge portion of the substrate loosely inserted into the substrate insertion portion, the nozzle having a mechanism for sucking the injection material by a suction force generated inside the nozzle, and A dust collecting mechanism for sucking dust generated inside is provided with a substrate peripheral portion processing mechanism communicated with the substrate peripheral portion processing chamber, and an injection material supply disposed above the nozzle and connected to the nozzle via a hose. A mechanism for moving and rotating the substrate relative to the nozzle, and a mechanism for rotating the substrate; and an initial stage of the substrate moving and rotating mechanism. Transport above the stop position A board transport mechanism; and a lifting mechanism connected to the substrate transport mechanism, for lowering the substrate transport mechanism, and for transposing the substrate to a substrate moving and rotating mechanism stopped below the substrate. A blasting method for removing a thin film layer at the peripheral edge of the substrate by a blasting apparatus characterized by comprising:
A step of moving the substrate forward by the substrate transport mechanism and transporting it above the substrate moving rotation mechanism;
A positioning step for stopping the substrate conveyed above the substrate moving rotation mechanism at a predetermined position;
It lowered the substrate transfer mechanism actuates the lifting mechanism, fixing the substrate on the placing table as well as placing the substrate on the placing table of the substrate moving rotating mechanism is stopped below the substrate And a process of
Horizontally moving the substrate moving rotation mechanism to loosely insert at least one side of the substrate peripheral portion into the substrate insertion portion of the substrate peripheral portion processing mechanism;
While spraying an injection material from the nozzle while further horizontally moving the substrate moving and rotating mechanism, the thin film layer of the substrate peripheral portion loosely inserted into the substrate free insertion portion of the substrate peripheral portion processing mechanism is removed, Sucking the propellant with the dust collecting mechanism;
A blasting method comprising: A step of rotating the substrate by 90 degrees by the substrate moving rotation mechanism after removing an unnecessary thin film layer on at least one side of the peripheral edge of the substrate;
A step of horizontally moving the substrate moving and rotating mechanism to loosely insert at least one side adjacent to the edge of the peripheral edge from which the thin film layer of the substrate has been removed into the substrate insertion portion of the substrate peripheral edge processing mechanism;
While spraying a spray material from the nozzle while further horizontally moving the substrate moving rotation mechanism, and removing the unnecessary thin film layer of the peripheral portion loosely inserted into the substrate insertion portion of the substrate peripheral portion processing mechanism, Sucking the spray material with the dust collecting mechanism;
The blasting method according to claim 8 , further comprising:

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