TWI594674B - 形成圖案化金屬層的方法及具有圖案化金屬層的物件 - Google Patents
形成圖案化金屬層的方法及具有圖案化金屬層的物件 Download PDFInfo
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- TWI594674B TWI594674B TW103136009A TW103136009A TWI594674B TW I594674 B TWI594674 B TW I594674B TW 103136009 A TW103136009 A TW 103136009A TW 103136009 A TW103136009 A TW 103136009A TW I594674 B TWI594674 B TW I594674B
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- active layer
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- 229910052751 metal Inorganic materials 0.000 title claims description 101
- 239000002184 metal Substances 0.000 title claims description 101
- 238000000034 method Methods 0.000 title claims description 55
- 239000010410 layer Substances 0.000 claims description 205
- 230000004913 activation Effects 0.000 claims description 20
- 239000012790 adhesive layer Substances 0.000 claims description 20
- 238000007772 electroless plating Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000009713 electroplating Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 230000000977 initiatory effect Effects 0.000 description 4
- 239000000976 ink Substances 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
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- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
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- C23C18/1601—Process or apparatus
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- C23C18/1607—Process or apparatus coating on selected surface areas by direct patterning
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
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- C23C18/1851—Pretreatment of the material to be coated of surfaces of non-metallic or semiconducting in organic material
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
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- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
- C23C18/2046—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
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- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/18—Pretreatment of the material to be coated
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- C23C18/2006—Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
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- C23C18/2073—Multistep pretreatment
- C23C18/2086—Multistep pretreatment with use of organic or inorganic compounds other than metals, first
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- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
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- B41M2205/38—Intermediate layers; Layers between substrate and imaging layer
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/05—Patterning and lithography; Masks; Details of resist
- H05K2203/0502—Patterning and lithography
- H05K2203/0528—Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
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- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
Description
本發明是有關於一種形成圖案化金屬層的方法及具有圖案化金屬層的物件。
美國專利第7927454號揭露了一種在一平面上形成一金屬圖案的方法,其包括以下步驟:在靠近一接受體的位置放置一供體部件,其中供體部件包括一供體基板及一熱轉移層,且熱轉移層是靠近接受體表面放置;利用雷射光束加熱熱轉移層表面,使得受到加熱的部分熱轉移層熱轉印至接受體表面,最後移除無受到雷射加熱的熱轉移層,並利用無電沉積使金屬材料生長在熱轉移層表面,而形成一金屬圖案。然而,在現今的產業界中,更需要的是將金屬圖案形成在部分平面、凹槽內,甚至是球面或曲面等非平面上,且在利用雷射熱轉印熱轉移層的過程中,雷射供給熱轉移層的熱能會透過熱傳導的方式傳遞到非雷射
加熱的區域,使得部分非被雷射加熱的熱轉移層區域獲得熱能而具有黏性並黏附於接受體上,如此將使得在移除熱轉移層的步驟中,熱轉移層有移除不淨的問題,同時也讓金屬圖案暴露在短路與圖形定義不明確的風險中。
因此,本發明之其中一目的,即在提供一種形成圖案化金屬層的方法。
因此,本發明之其中另一目的,即在提供一種具有圖案化金屬層的物件。
於是,本發明形成圖案化金屬層的方法在一些實施態樣中,包含以下步驟:提供一具有一絕緣表面的物件;將一含有活化金屬的活化層轉印在該絕緣表面;移除該活化層的一部份,以形成一預定圖案;利用非電鍍製程在具有該預定圖案的活化層上形成一可導電的金屬層。
於是,本發明形成圖案化金屬層的方法在一些實施態樣中,包含以下步驟:提供一具有一絕緣表面的物件;將一含有活化金屬的活化層轉印在該絕緣表面;利用非電鍍製程在該活化層上形成一可導電的金屬層;
移除該金屬層及活化層的一部份,以形成一預定圖案。
於是,本發明具有圖案化金屬層的物件,在一些實施態樣中,是包含:一物件、一黏合層、含有活化金屬的活化層,及一可導電金屬層。其中,該物件具有一絕緣表面,該絕緣表面之至少部分呈非平面狀;該黏合層位於該絕緣表面上;該含有活化金屬的活化層位於該黏合層上;該可導電金屬層位於該活化層上,且與該活化層共同界定一預定圖案。
本發明之功效在於:透過在絕緣表面上形成活化層,而能在表面呈非完全平面的物件上形成可導電的金屬層。
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203‧‧‧步驟
204‧‧‧步驟
205‧‧‧步驟
301‧‧‧步驟
302‧‧‧步驟
303‧‧‧步驟
304‧‧‧步驟
305‧‧‧步驟
306‧‧‧步驟
1‧‧‧片材
11‧‧‧基層
12‧‧‧離型層
2‧‧‧活化層
21‧‧‧隔離區
22‧‧‧預定設置電路圖案區域
23‧‧‧預定設置電路圖案以外區域
3‧‧‧物件
31‧‧‧絕緣表面
32‧‧‧側壁
4‧‧‧金屬層
5‧‧‧黏合層
本發明之其他的特徵及功效,將於參照圖式的實施例詳細說明中清楚地呈現,其中:圖1是一流程方塊圖,說明本發明形成圖案化金屬層的方法之第一實施例的主要步驟;圖2至圖6是說明該第一實施例的實施步驟的流程示意圖;圖7是一立體圖,說明該實施例的一物件具有一圍繞壁及一絕緣表面;圖8是一流程方塊圖,說明本發明形成圖案化金屬層的方法之第二實施例的主要步驟;圖9至圖10是說明該第二實施例的實施步驟的流程示
意圖;圖11是一流程方塊圖,說明本發明形成圖案化金屬層的方法之第三實施例的主要步驟;圖12至圖16是說明該第三實施例的實施步驟的流程示意圖;圖17是一立體圖,說明由該第三實施例所製成的一具有圖案化金屬層的物件;圖18是一剖面圖,說明本發明形成圖案化金屬層的方法之第四實施例;及圖19是一剖面圖,說明該第四實施例的一金屬層。
在本發明被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。
參閱圖1,為本發明形成圖案化金屬層的方法之第一實施例主要實施步驟的流程方塊圖,此第一實施例的主要步驟包含:步驟101,在一具撓性的片材表面形成一含有能引發化學鍍覆的活化金屬的活化層;步驟102,將活化層以熱轉印方式轉移至一物件的絕緣表面上;步驟103,移除片材;步驟104,利用一雷射光束移除活化層的一部份,以形成一預定圖案;步驟105,利用化學鍍製程在具有預定圖案的活
化層上形成一可導電的金屬層。
以下配合圖2至圖7具體說明第一實施例的實施步驟。
參閱圖2與步驟101,在一具撓性的片材1表面形成一含有能引發化學鍍覆的活化金屬的活化層2。其中,片材1包括一基層11及一形成在基層11與金屬活化層2之間的離型層12,離型層12使片材1容易與活化層2分離。基層11在本實施例中主要是由聚對苯二甲酸乙二酯(Polyethylene Terephthalate,PET)或環氧丙烷(Propylene Oxide,PO)等具撓性的材質所製成。而離型層12主要是由矽樹脂(Silicon Resin)、矽油(Silicone Oil)或其他具有相同功能的離型油墨所製成。
活化層2主要是由混摻催化材料的油墨所製成。催化材料是可在化學鍍的製程中催化金屬生長之材料,其主要是由金屬、金屬鹽或錯合物所組成,金屬可為鈀、鉈、鋁、鈧、鈦、釩、錳或其組合等,金屬鹽可為鈀、鉑或銀之鹽類等。本實施例中是將上述混摻催化材料的油墨噴塗在片材1表面以形成活化層2,且活化層2的厚度範圍介於15微米至60微米之間,然非以此為限,例如亦可透過網印方式將油墨在片材1表面形成活化層2。
參閱圖3與步驟102,將撓性片材1具有活化層2的表面壓合於一物件3的絕緣表面31上,而以熱轉印方式將活化層2轉移至絕緣表面31上。物件3包括此絕緣表面31及一圍繞此絕緣表面31的側壁32,且由於此側壁32
的存在,使得物件3的表面為非平面。而在本實施例中,物件3為一車燈燈座(見圖7),且絕緣表面31的製作方式是在物件3的一金屬表面上塗佈一層環氧樹脂(Epoxy Resin)或陶瓷材料(Ceramic Material)的絕緣層,使絕緣表面31具電絕緣性。在其他實施例中,物件3本身可為塑膠或其他絕緣材質,故其本身即具備一絕緣表面31而無須額外形成一絕緣層。此外,如前所述,本例中由於片材1本身具備撓性,故絕緣表面31除了可為一完全水平或局部水平的平面外,亦可為一曲面或球面等非平面,撓性片材1則可配合絕緣表面31曲度而緊密壓合於絕緣表面31,以使活化層2完整轉印至絕緣表面31上。此外,在本實施例中,熱轉印壓力的範圍介於6至6.5公斤之間,溫度介於130至140之間,且是利用習知熱壓機(圖未示)方式達成熱轉印效果,如此能在熱轉印的過程中達到最佳的附著效果與生產良率,且在化學鍍的製程中能達到最佳的金屬成長效率。
參閱圖4與步驟103,將片材1由活化層2上移除,留下活化層2結合於絕緣表面31,亦即藉此於物件3的絕緣表面31上形成活化層2。由於已在基層11與金屬活化層2之間形成一離型層12,且片材1具撓性,因此在片材1由活化層2移除的過程中使用者能更加方便、省力。
參閱圖5與步驟104,利用一雷射光束移除活化層2的一部份,以形成一預定圖案(參見圖7)。本實施例中預定圖案是一電路圖案,而係利用雷射光束將活化層2預
定設置該電路圖案以外的區域去除,亦即只留下該電路圖案所在區域的活化層2。利用雷射光束剝除的優點在於此預定圖案的圖形精確度高、預定圖案內的最小線距可隨雷射光束的線寬微縮而微縮、圖案區與非圖案區的交界處不會有毛邊或是剝除不淨的疑慮,且生產的良率與穩定性佳。而在本實施例中,雷射光束機台的線距大於0.3毫米,線寬大於0.2毫米。然須指出者,於其他實施例中,亦可以雷射以外方式,例如以電腦數值控制工具機(CNC)等習知方式選擇性移除活化層2的一部份以形成預定圖案。
參閱圖6、圖7與步驟105,利用化學鍍或其他非電鍍製程在具有預定圖案的活化層2上形成一可導電的金屬層4。由於活化層2的存在,使得例如銅、鎳、金、銀、鈀、銠、錫、鈷等金屬能藉由化學鍍製程依預定圖案的形狀形成在活化層2上而成為一金屬圖案。而在化學鍍製程後,亦可再利用電鍍製程增加金屬層4的厚度,以達到使用上的需求。
因此,物件3不需為一全平面,而是僅需具有局部平面、曲面,或是球面等,即可透過熱轉印的方式轉印活化層2,並利用例如雷射光束形成預定圖案,進而將可導電的金屬層4沉積在物件3上,大大地增加了在非平面的物體上形成金屬圖案的可能性。
參閱圖8,為本發明形成圖案化金屬層的方法之第二實施例主要實施步驟的流程方塊圖。本實施例與第一實施例的主要差別在於本實施例是利用雷射光束一次性地
移除活化層2(見圖9)與金屬層4(見圖9)的一部分以形成一預定圖案。具體實施步驟如下:參閱步驟203、204與圖9,在步驟203移除片材1後,步驟204是先利用化學鍍製程或其他非電鍍在活化層2表面形成一可導電的金屬層4。參閱圖10與步驟205,接著利用雷射光束移除活化層2與金屬層4的一部分,以形成預定圖案,且如前所述,在化學鍍製程後,亦可選擇性再利用電鍍製程增加金屬層4的厚度。換言之,在本實施例中,是先在活化層2上形成金屬層4,再利用雷射光束一次性地移除活化層2與金屬層4的一部分以形成一預定圖案。而本實施例與上述的第一實施例皆可達到最後形成預定圖案的功效,但藉由製程的變化,能提供使用者更多的製程選擇,以達到其製造的效果與目的。而本實施例其餘各部件之特徵、材料特性及製作步驟與上述之第一實施例相似,故不再贅述。
參閱圖11,為本發明形成圖案化金屬層的方法之第三實施例主要實施步驟的流程方塊圖。本實施例與第一實施例的差別在於在活化層2上多形成了一層黏合層5。本實施例的具體實施步驟如下:參閱步驟301、302與圖12,在步驟301,也就是在一具撓性的片材1表面形成一含有能引發化學鍍覆的活化金屬的活化層2後,接著在活化層2上再形成一黏合層5,且此黏合層5具有黏性。參閱步驟303與圖13,透過黏合層5的黏性,使得活化層2藉由黏合層5而轉印在物件3的絕緣表面31上。因此,若活化層2無法藉由加熱而熱轉印至物件3的絕緣表面31時,即
可透過具黏性的黏合層5使得活化層2能透過黏附的方式而轉印至物件3上。參閱步驟304與圖14,移除片材1,此時黏合層5位於活化層2及絕緣表面31之間。參閱步驟305、306及圖15與16,如同第一實施例般,接下來則藉由雷線光束移除活化層2的一部分以形成一預定圖案(見圖17),最後再利用化學鍍或其他非電鍍製程形成一金屬層4。此外,如圖13至17所示,本實施例中物件3的絕緣表面31係特別以一從周緣件往中央下凹的弧面例示,而如前述,撓性片材1可撓曲而配合貼緊絕緣表面31之弧面,故而將活化層2完整轉印至絕緣表面31,當然,此弧面狀絕緣表面31亦可適用於前述第一、第二實施例,而非僅適於本實施例之製程。
因此,參閱圖16與17,利用本實施例所製成的具有圖案化金屬層的物件包含一物件3、一黏合層5、一活化層2及一可導電金屬層4。物件3具有一呈一往中央下凹弧面狀的絕緣表面31,且值得一提的是,在其他的實施態樣中,此絕緣表面31亦可呈一曲面或球面等非完全平面。黏合層5位於絕緣表面31上。活化層2透過黏合層5而黏附於絕緣表面31上。且活化層2含有能在化學鍍製程中引發金屬材料沉積及成長的活化金屬(圖未示)。可導電金屬層4透過活化層2內的活化金屬在化學鍍製程中引發金屬沉積而形成於活化層2上,並與活化層2共同形成一預定圖案。因此,透過在絕緣表面31上沉積活化層2,而能在表面呈非完全平面的物件3上形成可導電的金屬層4,使得使
用者能在表面呈非完全平面的物件3上製作其他需供電的元件而增加應用的可能性。而本實施例其餘各部件之特徵、材料特性及製作步驟與上述之第一實施例相似,故不再贅述。
參閱圖18,本發明形成圖案化金屬層的方法之第四實施例,其與第一實施例的主要差別在於,在第一實施例中,利用雷射光束移除活化層2一部份以形成預定圖案的步驟中(即步驟104),係將活化層2預定設置電路圖案以外區域去除而只留下電路圖案所在區域的活化層2;本實施例則是利用雷射在活化層2切蝕形成一溝槽狀隔離區21,用以隔離位於隔離區21內側的預定設置電路圖案區域22及隔離區21外側的預定設置電路圖案以外區域23,亦即使兩區域22、23相互絕緣而不導通。而後,對應第一實施例利用化學鍍或其他非電鍍製程在活化層2上形成金屬層4之步驟(即步驟105),如圖19所示,本實施例中金屬層4將形成於兩區域22、23內的活化層2上,隔離區21內的活化層2因已被雷射去除,故將不會在此區域21內形成金屬層4。雖然實際的電路圖案僅存在於預定設置電路圖案區域22,但由於隔離區21之隔離,預定設置電路圖案以外區域23之活化層2及金屬層4仍可保留而不致影響預定設置電路圖案區域22的電路圖案,亦即可省去利用雷射或其他方式去除預定設置電路圖案以外區域23內之活化層2及金屬層4之工序。
綜上所述,透過轉印活化層2及藉由雷射光束
或其他方式形成預定圖案,使得可導電的金屬層4得以沉積在僅具有局部平面、曲面,或是球面的物件3上,故確實能達成本發明之目的。
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。
3‧‧‧物件
31‧‧‧絕緣表面
32‧‧‧側壁
4‧‧‧金屬層
Claims (18)
- 一種形成圖案化金屬層的方法,包含以下步驟:提供一具有一絕緣表面的物件;提供一片材,並在該片材表面形成一含有活化金屬的活化層;將該活化層以轉印方式轉移至該絕緣表面並移除該片材,而使該活化層形成在該絕緣表面;移除該活化層的一部份,以形成一預定圖案;及利用非電鍍製程在具有該預定圖案的活化層上形成一可導電的金屬層。
- 如請求項1所述形成圖案化金屬層的方法,其中,該片材包括一基層,及一形成在該基層與該活化層之間的離型層,該離型層使該片材容易與該活化層分離。
- 如請求項1所述形成圖案化金屬層的方法,其中,該絕緣表面至少部分為非平面,該片材則具撓性。
- 如請求項1所述形成圖案化金屬層的方法,其中,該物件還具有一圍繞該絕緣表面設置的側壁。
- 如請求項1所述形成圖案化金屬層的方法,其中,位於該片材表面的該活化層的厚度範圍介於15微米至60微米之間。
- 如請求項1所述形成圖案化金屬層的方法,其中,該移除該活化層的步驟包括利用雷射照射該活化層。
- 如請求項1所述形成圖案化金屬層的方法,其步驟還包含將該活化層轉印在該絕緣表面前,於該活化層表面形 成一黏合層,使該活化層轉印在該絕緣表面後,該黏合層係位於該活化層及該絕緣表面之間。
- 如請求項1所述形成圖案化金屬層的方法,其中,該提供該具有絕緣表面的物件的步驟包括於該物件的一金屬表面上形成一絕緣層。
- 如請求項1所述形成圖案化金屬層的方法,其中,該移除該活化層的一部份以形成該預定圖案的步驟包括將該活化層預定設置該圖案以外的區域去除。
- 如請求項1所述形成圖案化金屬層的方法,其中,該移除該活化層的一部份以形成該預定圖案的步驟包括在該活化層形成一隔離區,以隔離位於該隔離區內側的一預定設置該圖案的區域及該隔離區外側的一預定設置該圖案以外的區域。
- 一種形成圖案化金屬層的方法,包含以下步驟:提供一具有一絕緣表面的物件;提供一片材,並在該片材表面形成一含有活化金屬的活化層;將該活化層以轉印方式轉移至該絕緣表面並移除該片材,而使該活化層形成在該絕緣表面;利用非電鍍製程在該活化層上形成一可導電的金屬層;及移除該金屬層及活化層的一部份,以形成一預定圖案。
- 如請求項11所述形成圖案化金屬層的方法,其中,該片 材包括一基層,及一形成在該基層與該活化層之間的離型層,該離型層使該片材容易與該活化層分離。
- 如請求項11所述形成圖案化金屬層的方法,其中,該絕緣表面至少部分為非平面,該片材則具撓性。
- 如請求項11所述形成圖案化金屬層的方法,其中,該移除該金屬層及活化層的步驟包括利用雷射照射該金屬層及活化層。
- 如請求項11所述形成圖案化金屬層的方法,其步驟還包含將該活化層轉印在該絕緣表面前,於該活化層表面形成一黏合層,使該活化層轉印在該絕緣表面後,該黏合層係位於該活化層及該絕緣表面之間。
- 一種具有圖案化金屬層的物件,包含:一物件,具有一絕緣表面,該絕緣表面之至少部分呈非平面狀;一黏合層,位於該絕緣表面上;一含有活化金屬的活化層,位於該黏合層上;一可導電金屬層,位於該活化層上,且與該活化層共同界定一預定圖案。
- 如請求項16所述具有圖案化金屬層的物件,其中,該物件的非平面狀絕緣表面是呈一弧面。
- 如請求項16所述具有圖案化金屬層的物件,其中,該物件還具有一圍繞該絕緣表面設置的側壁。
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US14/885,509 US9982348B2 (en) | 2014-10-17 | 2015-10-16 | Method of forming patterned metal unit, and patterned article formed with the same |
US15/967,041 US10443131B2 (en) | 2014-10-17 | 2018-04-30 | Method of forming patterned metal unit, and patterned article formed with the same |
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TW546670B (en) * | 2001-05-15 | 2003-08-11 | Ibm | Method for electroless deposition and patterning of a metal on a substrate |
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TW539763B (en) * | 1999-06-18 | 2003-07-01 | Ibm | Method for printing a catalyst on substrates for electroless deposition |
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DE102004034139A1 (de) * | 2004-07-15 | 2006-02-02 | Pemeas Gmbh | Verfahren zur Herstellung von Membran-Elektroden-Einheiten |
ATE389317T1 (de) * | 2006-02-23 | 2007-10-15 | Atotech Deutschland Gmbh | Verfahren zur herstellung eines mikroreaktors und dessen verwendung als reformer |
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JP5590598B2 (ja) * | 2007-04-24 | 2014-09-17 | 独立行政法人産業技術総合研究所 | カーボンナノチューブ含有樹脂複合体及びその製造方法 |
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US9982348B2 (en) | 2018-05-29 |
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