TWI593695B - Organic electroluminescent device and method of manufacturing the same - Google Patents
Organic electroluminescent device and method of manufacturing the same Download PDFInfo
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- TWI593695B TWI593695B TW102113218A TW102113218A TWI593695B TW I593695 B TWI593695 B TW I593695B TW 102113218 A TW102113218 A TW 102113218A TW 102113218 A TW102113218 A TW 102113218A TW I593695 B TWI593695 B TW I593695B
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- 238000004519 manufacturing process Methods 0.000 title claims description 50
- 150000001875 compounds Chemical class 0.000 claims description 259
- 229910052796 boron Inorganic materials 0.000 claims description 230
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 227
- -1 decane compound Chemical class 0.000 claims description 180
- 229910044991 metal oxide Inorganic materials 0.000 claims description 160
- 150000004706 metal oxides Chemical class 0.000 claims description 160
- 229910052757 nitrogen Inorganic materials 0.000 claims description 159
- 239000000872 buffer Substances 0.000 claims description 157
- 125000001424 substituent group Chemical group 0.000 claims description 153
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 124
- 150000002894 organic compounds Chemical class 0.000 claims description 116
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 112
- 239000000758 substrate Substances 0.000 claims description 112
- 238000005401 electroluminescence Methods 0.000 claims description 104
- 229920000642 polymer Polymers 0.000 claims description 104
- 125000004432 carbon atom Chemical group C* 0.000 claims description 92
- 238000000034 method Methods 0.000 claims description 92
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 87
- 125000003118 aryl group Chemical group 0.000 claims description 80
- 125000004429 atom Chemical group 0.000 claims description 78
- 229910052799 carbon Inorganic materials 0.000 claims description 62
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 60
- 229910052751 metal Inorganic materials 0.000 claims description 49
- 125000000217 alkyl group Chemical group 0.000 claims description 48
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 41
- 125000000304 alkynyl group Chemical group 0.000 claims description 33
- 238000000576 coating method Methods 0.000 claims description 33
- 239000000178 monomer Substances 0.000 claims description 32
- 239000011248 coating agent Substances 0.000 claims description 28
- 239000003638 chemical reducing agent Substances 0.000 claims description 24
- 150000001721 carbon Chemical group 0.000 claims description 22
- 125000005647 linker group Chemical group 0.000 claims description 21
- 229910052718 tin Inorganic materials 0.000 claims description 17
- 230000000379 polymerizing effect Effects 0.000 claims description 15
- 239000011701 zinc Substances 0.000 claims description 12
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 11
- 229910052725 zinc Inorganic materials 0.000 claims description 11
- KAESVJOAVNADME-UHFFFAOYSA-N 1H-pyrrole Natural products C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 10
- 229920000768 polyamine Polymers 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 150000004678 hydrides Chemical group 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052791 calcium Inorganic materials 0.000 claims description 4
- 239000011575 calcium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- MXMZCLLIUQEKSN-UHFFFAOYSA-N benzimidazoline Chemical class C1=CC=C2NCNC2=C1 MXMZCLLIUQEKSN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 239000010955 niobium Substances 0.000 claims description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 2
- 125000001072 heteroaryl group Chemical group 0.000 claims 1
- 239000010410 layer Substances 0.000 description 833
- 239000010408 film Substances 0.000 description 236
- 239000000463 material Substances 0.000 description 93
- 239000000243 solution Substances 0.000 description 71
- 125000000623 heterocyclic group Chemical group 0.000 description 64
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 62
- 238000005259 measurement Methods 0.000 description 58
- 230000005525 hole transport Effects 0.000 description 47
- 239000002184 metal Substances 0.000 description 47
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 44
- 238000000137 annealing Methods 0.000 description 42
- 230000000052 comparative effect Effects 0.000 description 38
- 125000005843 halogen group Chemical group 0.000 description 37
- 239000002904 solvent Substances 0.000 description 37
- 125000003342 alkenyl group Chemical group 0.000 description 36
- 230000015572 biosynthetic process Effects 0.000 description 33
- 238000002347 injection Methods 0.000 description 31
- 239000007924 injection Substances 0.000 description 31
- 238000007740 vapor deposition Methods 0.000 description 31
- 239000011787 zinc oxide Substances 0.000 description 31
- 125000003545 alkoxy group Chemical group 0.000 description 30
- 230000000694 effects Effects 0.000 description 29
- 229920002873 Polyethylenimine Polymers 0.000 description 28
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 28
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 26
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 25
- 229940125904 compound 1 Drugs 0.000 description 24
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Natural products C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 23
- JUJWROOIHBZHMG-UHFFFAOYSA-N pyridine Substances C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 23
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 21
- 230000006870 function Effects 0.000 description 21
- 239000000126 substance Substances 0.000 description 20
- 238000002425 crystallisation Methods 0.000 description 19
- 230000008025 crystallization Effects 0.000 description 19
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 19
- 239000002019 doping agent Substances 0.000 description 19
- 238000004020 luminiscence type Methods 0.000 description 18
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 18
- 125000004430 oxygen atom Chemical group O* 0.000 description 18
- 230000002829 reductive effect Effects 0.000 description 18
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 17
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 17
- 238000006068 polycondensation reaction Methods 0.000 description 17
- YLQBMQCUIZJEEH-UHFFFAOYSA-N Furan Chemical group C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 16
- 238000006243 chemical reaction Methods 0.000 description 16
- 125000005842 heteroatom Chemical group 0.000 description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 15
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 15
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 15
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 14
- 239000010931 gold Substances 0.000 description 14
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 14
- 125000003396 thiol group Chemical class [H]S* 0.000 description 14
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 13
- 125000003277 amino group Chemical group 0.000 description 13
- 230000008859 change Effects 0.000 description 13
- 150000004696 coordination complex Chemical class 0.000 description 13
- 239000011259 mixed solution Substances 0.000 description 13
- 125000001624 naphthyl group Chemical group 0.000 description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 12
- 229920000877 Melamine resin Polymers 0.000 description 12
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 125000005577 anthracene group Chemical group 0.000 description 12
- 125000003710 aryl alkyl group Chemical group 0.000 description 12
- 125000003700 epoxy group Chemical group 0.000 description 12
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 12
- 239000000203 mixture Substances 0.000 description 12
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 12
- 238000004544 sputter deposition Methods 0.000 description 12
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 11
- 125000000707 boryl group Chemical group B* 0.000 description 11
- 125000000714 pyrimidinyl group Chemical group 0.000 description 11
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 11
- 238000003786 synthesis reaction Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
- 230000007774 longterm Effects 0.000 description 10
- 238000001420 photoelectron spectroscopy Methods 0.000 description 10
- 238000007789 sealing Methods 0.000 description 10
- 239000007787 solid Substances 0.000 description 10
- 238000004528 spin coating Methods 0.000 description 10
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 9
- 125000004453 alkoxycarbonyl group Chemical group 0.000 description 9
- 125000002102 aryl alkyloxo group Chemical group 0.000 description 9
- 125000004104 aryloxy group Chemical group 0.000 description 9
- 239000013078 crystal Substances 0.000 description 9
- 238000000354 decomposition reaction Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- OAKJQQAXSVQMHS-UHFFFAOYSA-N hydrazine group Chemical group NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 9
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 9
- 239000012044 organic layer Substances 0.000 description 9
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 125000004076 pyridyl group Chemical group 0.000 description 9
- 229910052717 sulfur Inorganic materials 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- FCEHBMOGCRZNNI-UHFFFAOYSA-N 1-benzothiophene Chemical group C1=CC=C2SC=CC2=C1 FCEHBMOGCRZNNI-UHFFFAOYSA-N 0.000 description 8
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical group CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 8
- YTPLMLYBLZKORZ-UHFFFAOYSA-N Divinylene sulfide Natural products C=1C=CSC=1 YTPLMLYBLZKORZ-UHFFFAOYSA-N 0.000 description 8
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 8
- 239000012300 argon atmosphere Substances 0.000 description 8
- 125000005279 aryl sulfonyloxy group Chemical group 0.000 description 8
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 8
- 229910000420 cerium oxide Inorganic materials 0.000 description 8
- IOJUPLGTWVMSFF-UHFFFAOYSA-N cyclobenzothiazole Natural products C1=CC=C2SC=NC2=C1 IOJUPLGTWVMSFF-UHFFFAOYSA-N 0.000 description 8
- 238000005227 gel permeation chromatography Methods 0.000 description 8
- 150000002430 hydrocarbons Chemical group 0.000 description 8
- 238000005286 illumination Methods 0.000 description 8
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 8
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 description 8
- 125000002971 oxazolyl group Chemical group 0.000 description 8
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 8
- 238000006116 polymerization reaction Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000000047 product Substances 0.000 description 8
- VQGHOUODWALEFC-UHFFFAOYSA-N 2-phenylpyridine Chemical compound C1=CC=CC=C1C1=CC=CC=N1 VQGHOUODWALEFC-UHFFFAOYSA-N 0.000 description 7
- 125000004659 aryl alkyl thio group Chemical group 0.000 description 7
- 125000005110 aryl thio group Chemical group 0.000 description 7
- 125000004093 cyano group Chemical group *C#N 0.000 description 7
- 239000007788 liquid Substances 0.000 description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 7
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 7
- 230000009257 reactivity Effects 0.000 description 7
- 125000004434 sulfur atom Chemical group 0.000 description 7
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical group [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 6
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- FZWLAAWBMGSTSO-UHFFFAOYSA-N Thiazole Chemical group C1=CSC=N1 FZWLAAWBMGSTSO-UHFFFAOYSA-N 0.000 description 6
- HEDRZPFGACZZDS-MICDWDOJSA-N Trichloro(2H)methane Chemical compound [2H]C(Cl)(Cl)Cl HEDRZPFGACZZDS-MICDWDOJSA-N 0.000 description 6
- 125000005278 alkyl sulfonyloxy group Chemical group 0.000 description 6
- 125000004414 alkyl thio group Chemical group 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 238000007664 blowing Methods 0.000 description 6
- 125000006612 decyloxy group Chemical group 0.000 description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 6
- 230000005284 excitation Effects 0.000 description 6
- 239000000284 extract Substances 0.000 description 6
- 125000001188 haloalkyl group Chemical group 0.000 description 6
- 238000004770 highest occupied molecular orbital Methods 0.000 description 6
- 125000002883 imidazolyl group Chemical group 0.000 description 6
- 229910003437 indium oxide Inorganic materials 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- PZOUSPYUWWUPPK-UHFFFAOYSA-N indole Natural products CC1=CC=CC2=C1C=CN2 PZOUSPYUWWUPPK-UHFFFAOYSA-N 0.000 description 6
- RKJUIXBNRJVNHR-UHFFFAOYSA-N indolenine Natural products C1=CC=C2CC=NC2=C1 RKJUIXBNRJVNHR-UHFFFAOYSA-N 0.000 description 6
- 229910052740 iodine Inorganic materials 0.000 description 6
- CECAIMUJVYQLKA-UHFFFAOYSA-N iridium 1-phenylisoquinoline Chemical compound [Ir].C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12.C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 CECAIMUJVYQLKA-UHFFFAOYSA-N 0.000 description 6
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 6
- 239000000395 magnesium oxide Substances 0.000 description 6
- 125000000962 organic group Chemical group 0.000 description 6
- 230000010355 oscillation Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 229920001281 polyalkylene Polymers 0.000 description 6
- 125000003226 pyrazolyl group Chemical group 0.000 description 6
- 239000002994 raw material Substances 0.000 description 6
- 238000007738 vacuum evaporation Methods 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 5
- 239000004640 Melamine resin Substances 0.000 description 5
- 238000005481 NMR spectroscopy Methods 0.000 description 5
- WTKZEGDFNFYCGP-UHFFFAOYSA-N Pyrazole Chemical compound C=1C=NNC=1 WTKZEGDFNFYCGP-UHFFFAOYSA-N 0.000 description 5
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- 239000007983 Tris buffer Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 150000001639 boron compounds Chemical class 0.000 description 5
- 125000000609 carbazolyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3NC12)* 0.000 description 5
- 239000000470 constituent Substances 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 229910001882 dioxygen Inorganic materials 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 125000001153 fluoro group Chemical group F* 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 5
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 5
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 5
- 238000010030 laminating Methods 0.000 description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 5
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 5
- 239000011368 organic material Substances 0.000 description 5
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000002861 polymer material Substances 0.000 description 5
- 150000004032 porphyrins Chemical class 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010935 stainless steel Substances 0.000 description 5
- 229910001220 stainless steel Inorganic materials 0.000 description 5
- 125000001544 thienyl group Chemical group 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- 238000005160 1H NMR spectroscopy Methods 0.000 description 4
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- OAZWDJGLIYNYMU-UHFFFAOYSA-N Leucocrystal Violet Chemical compound C1=CC(N(C)C)=CC=C1C(C=1C=CC(=CC=1)N(C)C)C1=CC=C(N(C)C)C=C1 OAZWDJGLIYNYMU-UHFFFAOYSA-N 0.000 description 4
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 4
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 4
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 4
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- YNPNZTXNASCQKK-UHFFFAOYSA-N Phenanthrene Natural products C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 4
- 239000004793 Polystyrene Substances 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 4
- 125000003172 aldehyde group Chemical group 0.000 description 4
- 125000002723 alicyclic group Chemical group 0.000 description 4
- 150000001412 amines Chemical class 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 125000003785 benzimidazolyl group Chemical group N1=C(NC2=C1C=CC=C2)* 0.000 description 4
- 125000006267 biphenyl group Chemical group 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 229920001577 copolymer Polymers 0.000 description 4
- 125000000753 cycloalkyl group Chemical group 0.000 description 4
- 150000002466 imines Chemical group 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 125000002183 isoquinolinyl group Chemical group C1(=NC=CC2=CC=CC=C12)* 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000013110 organic ligand Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 229920002223 polystyrene Polymers 0.000 description 4
- 238000010926 purge Methods 0.000 description 4
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 4
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 4
- 125000000168 pyrrolyl group Chemical group 0.000 description 4
- 238000004445 quantitative analysis Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 230000002441 reversible effect Effects 0.000 description 4
- 229910052703 rhodium Inorganic materials 0.000 description 4
- 239000010948 rhodium Substances 0.000 description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 125000005504 styryl group Chemical group 0.000 description 4
- 230000001629 suppression Effects 0.000 description 4
- 229910001935 vanadium oxide Inorganic materials 0.000 description 4
- 239000012808 vapor phase Substances 0.000 description 4
- 230000000007 visual effect Effects 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 239000008096 xylene Substances 0.000 description 4
- BCMCBBGGLRIHSE-UHFFFAOYSA-N 1,3-benzoxazole Chemical group C1=CC=C2OC=NC2=C1 BCMCBBGGLRIHSE-UHFFFAOYSA-N 0.000 description 3
- LPCWDYWZIWDTCV-UHFFFAOYSA-N 1-phenylisoquinoline Chemical compound C1=CC=CC=C1C1=NC=CC2=CC=CC=C12 LPCWDYWZIWDTCV-UHFFFAOYSA-N 0.000 description 3
- IANXAXNUNBAWBA-UHFFFAOYSA-N 2,2,3-trimethylundecane Chemical compound CCCCCCCCC(C)C(C)(C)C IANXAXNUNBAWBA-UHFFFAOYSA-N 0.000 description 3
- 125000004800 4-bromophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1Br 0.000 description 3
- 125000004199 4-trifluoromethylphenyl group Chemical group [H]C1=C([H])C(=C([H])C([H])=C1*)C(F)(F)F 0.000 description 3
- 239000005964 Acibenzolar-S-methyl Substances 0.000 description 3
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001299 aldehydes Chemical class 0.000 description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- 125000005161 aryl oxy carbonyl group Chemical group 0.000 description 3
- 125000005228 aryl sulfonate group Chemical group 0.000 description 3
- DZBUGLKDJFMEHC-UHFFFAOYSA-N benzoquinolinylidene Natural products C1=CC=CC2=CC3=CC=CC=C3N=C21 DZBUGLKDJFMEHC-UHFFFAOYSA-N 0.000 description 3
- 239000004305 biphenyl Chemical group 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 125000006165 cyclic alkyl group Chemical group 0.000 description 3
- 239000000412 dendrimer Substances 0.000 description 3
- 229920000736 dendritic polymer Polymers 0.000 description 3
- 239000000706 filtrate Substances 0.000 description 3
- 125000002541 furyl group Chemical group 0.000 description 3
- 229920000578 graft copolymer Polymers 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N naphthalene-acid Natural products C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 3
- 229910017464 nitrogen compound Inorganic materials 0.000 description 3
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 125000000538 pentafluorophenyl group Chemical group FC1=C(F)C(F)=C(*)C(F)=C1F 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920001197 polyacetylene Polymers 0.000 description 3
- 229920000123 polythiophene Polymers 0.000 description 3
- HPALAKNZSZLMCH-UHFFFAOYSA-M sodium;chloride;hydrate Chemical compound O.[Na+].[Cl-] HPALAKNZSZLMCH-UHFFFAOYSA-M 0.000 description 3
- 125000001273 sulfonato group Chemical group [O-]S(*)(=O)=O 0.000 description 3
- 229930192474 thiophene Natural products 0.000 description 3
- 150000003852 triazoles Chemical class 0.000 description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 3
- 229920002554 vinyl polymer Polymers 0.000 description 3
- FNQJDLTXOVEEFB-UHFFFAOYSA-N 1,2,3-benzothiadiazole Chemical group C1=CC=C2SN=NC2=C1 FNQJDLTXOVEEFB-UHFFFAOYSA-N 0.000 description 2
- UGUHFDPGDQDVGX-UHFFFAOYSA-N 1,2,3-thiadiazole Chemical group C1=CSN=N1 UGUHFDPGDQDVGX-UHFFFAOYSA-N 0.000 description 2
- FYGHSUNMUKGBRK-UHFFFAOYSA-N 1,2,3-trimethylbenzene Chemical compound CC1=CC=CC(C)=C1C FYGHSUNMUKGBRK-UHFFFAOYSA-N 0.000 description 2
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 description 2
- IANQTJSKSUMEQM-UHFFFAOYSA-N 1-benzofuran Chemical group C1=CC=C2OC=CC2=C1 IANQTJSKSUMEQM-UHFFFAOYSA-N 0.000 description 2
- ZVFJWYZMQAEBMO-UHFFFAOYSA-N 1h-benzo[h]quinolin-10-one Chemical compound C1=CNC2=C3C(=O)C=CC=C3C=CC2=C1 ZVFJWYZMQAEBMO-UHFFFAOYSA-N 0.000 description 2
- HBEDSQVIWPRPAY-UHFFFAOYSA-N 2,3-dihydrobenzofuran Chemical compound C1=CC=C2OCCC2=C1 HBEDSQVIWPRPAY-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- 125000004172 4-methoxyphenyl group Chemical group [H]C1=C([H])C(OC([H])([H])[H])=C([H])C([H])=C1* 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 2
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- UEXCJVNBTNXOEH-UHFFFAOYSA-N Ethynylbenzene Chemical group C#CC1=CC=CC=C1 UEXCJVNBTNXOEH-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 2
- NQRYJNQNLNOLGT-UHFFFAOYSA-N Piperidine Chemical compound C1CCNCC1 NQRYJNQNLNOLGT-UHFFFAOYSA-N 0.000 description 2
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- 125000002009 alkene group Chemical group 0.000 description 2
- 125000004390 alkyl sulfonyl group Chemical group 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000006615 aromatic heterocyclic group Chemical group 0.000 description 2
- 125000005264 aryl amine group Chemical group 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 125000003943 azolyl group Chemical group 0.000 description 2
- 238000007611 bar coating method Methods 0.000 description 2
- 125000005605 benzo group Chemical group 0.000 description 2
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical group [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- ILAHWRKJUDSMFH-UHFFFAOYSA-N boron tribromide Chemical compound BrB(Br)Br ILAHWRKJUDSMFH-UHFFFAOYSA-N 0.000 description 2
- 239000012267 brine Substances 0.000 description 2
- QARVLSVVCXYDNA-UHFFFAOYSA-N bromobenzene Chemical compound BrC1=CC=CC=C1 QARVLSVVCXYDNA-UHFFFAOYSA-N 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- MGNZXYYWBUKAII-UHFFFAOYSA-N cyclohexa-1,3-diene Chemical compound C1CC=CC=C1 MGNZXYYWBUKAII-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 125000004663 dialkyl amino group Chemical group 0.000 description 2
- 125000004986 diarylamino group Chemical group 0.000 description 2
- TXCDCPKCNAJMEE-UHFFFAOYSA-N dibenzofuran Chemical compound C1=CC=C2C3=CC=CC=C3OC2=C1 TXCDCPKCNAJMEE-UHFFFAOYSA-N 0.000 description 2
- IYYZUPMFVPLQIF-UHFFFAOYSA-N dibenzothiophene Chemical compound C1=CC=C2C3=CC=CC=C3SC2=C1 IYYZUPMFVPLQIF-UHFFFAOYSA-N 0.000 description 2
- LJXTYJXBORAIHX-UHFFFAOYSA-N diethyl 2,6-dimethyl-1,4-dihydropyridine-3,5-dicarboxylate Chemical compound CCOC(=O)C1=C(C)NC(C)=C(C(=O)OCC)C1 LJXTYJXBORAIHX-UHFFFAOYSA-N 0.000 description 2
- 238000007865 diluting Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000010265 fast atom bombardment Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 2
- 239000000499 gel Substances 0.000 description 2
- 238000007756 gravure coating Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical group [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 125000005226 heteroaryloxycarbonyl group Chemical group 0.000 description 2
- 150000002391 heterocyclic compounds Chemical class 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 125000002636 imidazolinyl group Chemical group 0.000 description 2
- 125000001041 indolyl group Chemical group 0.000 description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- AWJUIBRHMBBTKR-UHFFFAOYSA-N isoquinoline Chemical compound C1=NC=CC2=CC=CC=C21 AWJUIBRHMBBTKR-UHFFFAOYSA-N 0.000 description 2
- ZLTPDFXIESTBQG-UHFFFAOYSA-N isothiazole Chemical group C=1C=NSC=1 ZLTPDFXIESTBQG-UHFFFAOYSA-N 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 2
- 239000011654 magnesium acetate Substances 0.000 description 2
- 235000011285 magnesium acetate Nutrition 0.000 description 2
- 229940069446 magnesium acetate Drugs 0.000 description 2
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 2
- 235000019341 magnesium sulphate Nutrition 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 150000002830 nitrogen compounds Chemical class 0.000 description 2
- 229910052755 nonmetal Inorganic materials 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 150000002923 oximes Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- SIOXPEMLGUPBBT-UHFFFAOYSA-N picolinic acid Chemical compound OC(=O)C1=CC=CC=N1 SIOXPEMLGUPBBT-UHFFFAOYSA-N 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- UOHMMEJUHBCKEE-UHFFFAOYSA-N prehnitene Chemical compound CC1=CC=C(C)C(C)=C1C UOHMMEJUHBCKEE-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 150000003222 pyridines Chemical class 0.000 description 2
- 150000003230 pyrimidines Chemical class 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 150000003304 ruthenium compounds Chemical class 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- RFDGVZHLJCKEPT-UHFFFAOYSA-N tris(2,4,6-trimethyl-3-pyridin-3-ylphenyl)borane Chemical compound CC1=C(B(C=2C(=C(C=3C=NC=CC=3)C(C)=CC=2C)C)C=2C(=C(C=3C=NC=CC=3)C(C)=CC=2C)C)C(C)=CC(C)=C1C1=CC=CN=C1 RFDGVZHLJCKEPT-UHFFFAOYSA-N 0.000 description 2
- SXXNJJQVBPWGTP-UHFFFAOYSA-K tris[(4-methylquinolin-8-yl)oxy]alumane Chemical compound [Al+3].C1=CC=C2C(C)=CC=NC2=C1[O-].C1=CC=C2C(C)=CC=NC2=C1[O-].C1=CC=C2C(C)=CC=NC2=C1[O-] SXXNJJQVBPWGTP-UHFFFAOYSA-K 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 239000003643 water by type Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- BVOMRRWJQOJMPA-UHFFFAOYSA-N 1,2,3-trithiane Chemical compound C1CSSSC1 BVOMRRWJQOJMPA-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- ZRQPUVXXCWZMKW-UHFFFAOYSA-N 1,4-dioxane;1,3-dioxolane Chemical compound C1COCO1.C1COCCO1 ZRQPUVXXCWZMKW-UHFFFAOYSA-N 0.000 description 1
- LFKNYYQRWMMFSM-UHFFFAOYSA-N 1-ethyl-9h-carbazole;formaldehyde Chemical compound O=C.N1C2=CC=CC=C2C2=C1C(CC)=CC=C2 LFKNYYQRWMMFSM-UHFFFAOYSA-N 0.000 description 1
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 1
- 238000001644 13C nuclear magnetic resonance spectroscopy Methods 0.000 description 1
- HYZJCKYKOHLVJF-UHFFFAOYSA-N 1H-benzimidazole Chemical compound C1=CC=C2NC=NC2=C1 HYZJCKYKOHLVJF-UHFFFAOYSA-N 0.000 description 1
- BAXOFTOLAUCFNW-UHFFFAOYSA-N 1H-indazole Chemical compound C1=CC=C2C=NNC2=C1 BAXOFTOLAUCFNW-UHFFFAOYSA-N 0.000 description 1
- UIWLITBBFICQKW-UHFFFAOYSA-N 1h-benzo[h]quinolin-2-one Chemical compound C1=CC=C2C3=NC(O)=CC=C3C=CC2=C1 UIWLITBBFICQKW-UHFFFAOYSA-N 0.000 description 1
- WOHLSTOWRAOMSG-UHFFFAOYSA-N 2,3-dihydro-1,3-benzothiazole Chemical class C1=CC=C2SCNC2=C1 WOHLSTOWRAOMSG-UHFFFAOYSA-N 0.000 description 1
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 1
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 1
- FXPLCAKVOYHAJA-UHFFFAOYSA-N 2-(4-carboxypyridin-2-yl)pyridine-4-carboxylic acid Chemical compound OC(=O)C1=CC=NC(C=2N=CC=C(C=2)C(O)=O)=C1 FXPLCAKVOYHAJA-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- IKCQWKJZLSDDSS-UHFFFAOYSA-N 2-formyloxyethyl formate Chemical compound O=COCCOC=O IKCQWKJZLSDDSS-UHFFFAOYSA-N 0.000 description 1
- NSMJMUQZRGZMQC-UHFFFAOYSA-N 2-naphthalen-1-yl-1H-imidazo[4,5-f][1,10]phenanthroline Chemical compound C12=CC=CN=C2C2=NC=CC=C2C2=C1NC(C=1C3=CC=CC=C3C=CC=1)=N2 NSMJMUQZRGZMQC-UHFFFAOYSA-N 0.000 description 1
- XBHOUXSGHYZCNH-UHFFFAOYSA-N 2-phenyl-1,3-benzothiazole Chemical compound C1=CC=CC=C1C1=NC2=CC=CC=C2S1 XBHOUXSGHYZCNH-UHFFFAOYSA-N 0.000 description 1
- FIISKTXZUZBTRC-UHFFFAOYSA-N 2-phenyl-1,3-benzoxazole Chemical compound C1=CC=CC=C1C1=NC2=CC=CC=C2O1 FIISKTXZUZBTRC-UHFFFAOYSA-N 0.000 description 1
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 1
- RSEBUVRVKCANEP-UHFFFAOYSA-N 2-pyrroline Chemical compound C1CC=CN1 RSEBUVRVKCANEP-UHFFFAOYSA-N 0.000 description 1
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- BJATUPPYBZHEIO-UHFFFAOYSA-N 3-methyl-2-phenylpyridine Chemical compound CC1=CC=CN=C1C1=CC=CC=C1 BJATUPPYBZHEIO-UHFFFAOYSA-N 0.000 description 1
- AKIIMLCQTGCWQQ-UHFFFAOYSA-N 4-(1,3-dimethyl-2h-benzimidazol-2-yl)-n,n-dimethylaniline Chemical compound C1=CC(N(C)C)=CC=C1C1N(C)C2=CC=CC=C2N1C AKIIMLCQTGCWQQ-UHFFFAOYSA-N 0.000 description 1
- YDCKPVSNPLMYRB-UHFFFAOYSA-N 5-bromo-2-(4-bromophenyl)pyridine Chemical compound C1=CC(Br)=CC=C1C1=CC=C(Br)C=N1 YDCKPVSNPLMYRB-UHFFFAOYSA-N 0.000 description 1
- GZVHEAJQGPRDLQ-UHFFFAOYSA-N 6-phenyl-1,3,5-triazine-2,4-diamine Chemical compound NC1=NC(N)=NC(C=2C=CC=CC=2)=N1 GZVHEAJQGPRDLQ-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- RAPHUPWIHDYTKU-WXUKJITCSA-N 9-ethyl-3-[(e)-2-[4-[4-[(e)-2-(9-ethylcarbazol-3-yl)ethenyl]phenyl]phenyl]ethenyl]carbazole Chemical compound C1=CC=C2C3=CC(/C=C/C4=CC=C(C=C4)C4=CC=C(C=C4)/C=C/C=4C=C5C6=CC=CC=C6N(C5=CC=4)CC)=CC=C3N(CC)C2=C1 RAPHUPWIHDYTKU-WXUKJITCSA-N 0.000 description 1
- OQLZINXFSUDMHM-UHFFFAOYSA-N Acetamidine Chemical compound CC(N)=N OQLZINXFSUDMHM-UHFFFAOYSA-N 0.000 description 1
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical group NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 description 1
- 241000156724 Antirhea Species 0.000 description 1
- 239000004135 Bone phosphate Substances 0.000 description 1
- KZMGYPLQYOPHEL-UHFFFAOYSA-N Boron trifluoride etherate Chemical compound FB(F)F.CCOCC KZMGYPLQYOPHEL-UHFFFAOYSA-N 0.000 description 1
- BLIMICVJADDXCG-UHFFFAOYSA-N BrC=1C=CC(=NC=1)C1=C(C=C(C=C1)Br)B(Br)Br Chemical compound BrC=1C=CC(=NC=1)C1=C(C=C(C=C1)Br)B(Br)Br BLIMICVJADDXCG-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- WQTFXPIWNWLHGI-UHFFFAOYSA-N C1=CC=CC=C1.NC(=C(C1=CC=CC=C1)N)C1=CC=CC=C1 Chemical compound C1=CC=CC=C1.NC(=C(C1=CC=CC=C1)N)C1=CC=CC=C1 WQTFXPIWNWLHGI-UHFFFAOYSA-N 0.000 description 1
- UJOBWOGCFQCDNV-UHFFFAOYSA-N Carbazole Natural products C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XZMCDFZZKTWFGF-UHFFFAOYSA-N Cyanamide Chemical compound NC#N XZMCDFZZKTWFGF-UHFFFAOYSA-N 0.000 description 1
- 229920000089 Cyclic olefin copolymer Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- DIIWSYPKAJVXBV-UHFFFAOYSA-N Hantzch dihydropyridine Natural products CCOC(=O)C1=CC(C(=O)OCC)=C(C)N=C1C DIIWSYPKAJVXBV-UHFFFAOYSA-N 0.000 description 1
- 101000679365 Homo sapiens Putative tyrosine-protein phosphatase TPTE Proteins 0.000 description 1
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 description 1
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical group CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 1
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical compound CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- LFZAGIJXANFPFN-UHFFFAOYSA-N N-[3-[4-(3-methyl-5-propan-2-yl-1,2,4-triazol-4-yl)piperidin-1-yl]-1-thiophen-2-ylpropyl]acetamide Chemical compound C(C)(C)C1=NN=C(N1C1CCN(CC1)CCC(C=1SC=CC=1)NC(C)=O)C LFZAGIJXANFPFN-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- BTHMYRRHBRHWTB-UHFFFAOYSA-N OC1=C(C=CC=C1)C=1SC2=C(N=1)C(=CC=C2)[Zn]C1=CC=CC2=C1N=C(S2)C1=C(C=CC=C1)O Chemical compound OC1=C(C=CC=C1)C=1SC2=C(N=1)C(=CC=C2)[Zn]C1=CC=CC2=C1N=C(S2)C1=C(C=CC=C1)O BTHMYRRHBRHWTB-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 229920000265 Polyparaphenylene Polymers 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 102100022578 Putative tyrosine-protein phosphatase TPTE Human genes 0.000 description 1
- CZPWVGJYEJSRLH-UHFFFAOYSA-N Pyrimidine Chemical compound C1=CN=CN=C1 CZPWVGJYEJSRLH-UHFFFAOYSA-N 0.000 description 1
- 239000012327 Ruthenium complex Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- PJANXHGTPQOBST-VAWYXSNFSA-N Stilbene Natural products C=1C=CC=CC=1/C=C/C1=CC=CC=C1 PJANXHGTPQOBST-VAWYXSNFSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000006069 Suzuki reaction reaction Methods 0.000 description 1
- 241000009298 Trigla lyra Species 0.000 description 1
- CKUAXEQHGKSLHN-UHFFFAOYSA-N [C].[N] Chemical group [C].[N] CKUAXEQHGKSLHN-UHFFFAOYSA-N 0.000 description 1
- GBKYFASVJPZWLI-UHFFFAOYSA-N [Pt+2].N1C(C=C2C(=C(CC)C(C=C3C(=C(CC)C(=C4)N3)CC)=N2)CC)=C(CC)C(CC)=C1C=C1C(CC)=C(CC)C4=N1 Chemical class [Pt+2].N1C(C=C2C(=C(CC)C(C=C3C(=C(CC)C(=C4)N3)CC)=N2)CC)=C(CC)C(CC)=C1C=C1C(CC)=C(CC)C4=N1 GBKYFASVJPZWLI-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- CUJRVFIICFDLGR-UHFFFAOYSA-N acetylacetonate Chemical compound CC(=O)[CH-]C(C)=O CUJRVFIICFDLGR-UHFFFAOYSA-N 0.000 description 1
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000000641 acridinyl group Chemical group C1(=CC=CC2=NC3=CC=CC=C3C=C12)* 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 125000003302 alkenyloxy group Chemical group 0.000 description 1
- 150000001345 alkine derivatives Chemical group 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 125000004448 alkyl carbonyl group Chemical group 0.000 description 1
- 125000004644 alkyl sulfinyl group Chemical group 0.000 description 1
- 125000005227 alkyl sulfonate group Chemical group 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000002178 anthracenyl group Chemical group C1(=CC=CC2=CC3=CC=CC=C3C=C12)* 0.000 description 1
- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 125000005018 aryl alkenyl group Chemical group 0.000 description 1
- 125000005098 aryl alkoxy carbonyl group Chemical group 0.000 description 1
- 125000001691 aryl alkyl amino group Chemical group 0.000 description 1
- 125000005129 aryl carbonyl group Chemical group 0.000 description 1
- 125000004391 aryl sulfonyl group Chemical group 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 150000007980 azole derivatives Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- RFRXIWQYSOIBDI-UHFFFAOYSA-N benzarone Chemical compound CCC=1OC2=CC=CC=C2C=1C(=O)C1=CC=C(O)C=C1 RFRXIWQYSOIBDI-UHFFFAOYSA-N 0.000 description 1
- 229940077388 benzenesulfonate Drugs 0.000 description 1
- SRSXLGNVWSONIS-UHFFFAOYSA-M benzenesulfonate Chemical compound [O-]S(=O)(=O)C1=CC=CC=C1 SRSXLGNVWSONIS-UHFFFAOYSA-M 0.000 description 1
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N benzo-alpha-pyrone Natural products C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 1
- 125000001164 benzothiazolyl group Chemical group S1C(=NC2=C1C=CC=C2)* 0.000 description 1
- 125000004196 benzothienyl group Chemical group S1C(=CC2=C1C=CC=C2)* 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- QGJOPFRUJISHPQ-NJFSPNSNSA-N carbon disulfide-14c Chemical compound S=[14C]=S QGJOPFRUJISHPQ-NJFSPNSNSA-N 0.000 description 1
- 125000005708 carbonyloxy group Chemical group [*:2]OC([*:1])=O 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 229940125782 compound 2 Drugs 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate group Chemical group [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- HHNHBFLGXIUXCM-GFCCVEGCSA-N cyclohexylbenzene Chemical compound [CH]1CCCC[C@@H]1C1=CC=CC=C1 HHNHBFLGXIUXCM-GFCCVEGCSA-N 0.000 description 1
- DIOQZVSQGTUSAI-NJFSPNSNSA-N decane Chemical class CCCCCCCCC[14CH3] DIOQZVSQGTUSAI-NJFSPNSNSA-N 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 125000005266 diarylamine group Chemical group 0.000 description 1
- 125000002720 diazolyl group Chemical group 0.000 description 1
- IYYZUPMFVPLQIF-ALWQSETLSA-N dibenzothiophene Chemical group C1=CC=CC=2[34S]C3=C(C=21)C=CC=C3 IYYZUPMFVPLQIF-ALWQSETLSA-N 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000012153 distilled water Substances 0.000 description 1
- GNTDGMZSJNCJKK-UHFFFAOYSA-N divanadium pentaoxide Chemical compound O=[V](=O)O[V](=O)=O GNTDGMZSJNCJKK-UHFFFAOYSA-N 0.000 description 1
- 238000007606 doctor blade method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000003480 eluent Substances 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 125000004185 ester group Chemical group 0.000 description 1
- CCIVGXIOQKPBKL-UHFFFAOYSA-N ethanesulfonic acid Chemical group CCS(O)(=O)=O CCIVGXIOQKPBKL-UHFFFAOYSA-N 0.000 description 1
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 description 1
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229930003935 flavonoid Natural products 0.000 description 1
- 150000002215 flavonoids Chemical class 0.000 description 1
- 235000017173 flavonoids Nutrition 0.000 description 1
- RMBPEFMHABBEKP-UHFFFAOYSA-N fluorene Chemical compound C1=CC=C2C3=C[CH]C=CC3=CC2=C1 RMBPEFMHABBEKP-UHFFFAOYSA-N 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- LAQNYYDYGVSPNQ-UHFFFAOYSA-N formaldehyde;hydrazine Chemical compound O=C.NN LAQNYYDYGVSPNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 125000005553 heteroaryloxy group Chemical group 0.000 description 1
- 125000005368 heteroarylthio group Chemical group 0.000 description 1
- 238000004896 high resolution mass spectrometry Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- XAKRTGZVYPZHCO-UHFFFAOYSA-O hydroxy-methoxy-oxophosphanium Chemical group CO[P+](O)=O XAKRTGZVYPZHCO-UHFFFAOYSA-O 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 239000005457 ice water Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910001867 inorganic solvent Inorganic materials 0.000 description 1
- 239000003049 inorganic solvent Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 125000002462 isocyano group Chemical group *[N+]#[C-] 0.000 description 1
- 125000000904 isoindolyl group Chemical group C=1(NC=C2C=CC=CC12)* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- ZBKFYXZXZJPWNQ-UHFFFAOYSA-N isothiocyanate group Chemical group [N-]=C=S ZBKFYXZXZJPWNQ-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- AMQDBUIQKQUCKY-UHFFFAOYSA-M magnesium;1,2,3,4,5-pentafluorobenzene-6-ide;bromide Chemical compound [Mg+2].[Br-].FC1=[C-]C(F)=C(F)C(F)=C1F AMQDBUIQKQUCKY-UHFFFAOYSA-M 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- GRVDJDISBSALJP-UHFFFAOYSA-N methyloxidanyl Chemical group [O]C GRVDJDISBSALJP-UHFFFAOYSA-N 0.000 description 1
- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 description 1
- 229910003455 mixed metal oxide Inorganic materials 0.000 description 1
- 239000002052 molecular layer Substances 0.000 description 1
- 238000004776 molecular orbital Methods 0.000 description 1
- PYLWMHQQBFSUBP-UHFFFAOYSA-N monofluorobenzene Chemical compound FC1=CC=CC=C1 PYLWMHQQBFSUBP-UHFFFAOYSA-N 0.000 description 1
- 125000002757 morpholinyl group Chemical group 0.000 description 1
- KKFHAJHLJHVUDM-UHFFFAOYSA-N n-vinylcarbazole Chemical compound C1=CC=C2N(C=C)C3=CC=CC=C3C2=C1 KKFHAJHLJHVUDM-UHFFFAOYSA-N 0.000 description 1
- 125000005186 naphthyloxy group Chemical group C1(=CC=CC2=CC=CC=C12)O* 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 125000000018 nitroso group Chemical group N(=O)* 0.000 description 1
- 239000012454 non-polar solvent Substances 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- JFNLZVQOOSMTJK-KNVOCYPGSA-N norbornene Chemical compound C1[C@@H]2CC[C@H]1C=C2 JFNLZVQOOSMTJK-KNVOCYPGSA-N 0.000 description 1
- NIHNNTQXNPWCJQ-UHFFFAOYSA-N o-biphenylenemethane Natural products C1=CC=C2CC3=CC=CC=C3C2=C1 NIHNNTQXNPWCJQ-UHFFFAOYSA-N 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 125000005429 oxyalkyl group Chemical group 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 125000005582 pentacene group Chemical group 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
- 229950000688 phenothiazine Drugs 0.000 description 1
- 125000000951 phenoxy group Chemical group [H]C1=C([H])C([H])=C(O*)C([H])=C1[H] 0.000 description 1
- HXITXNWTGFUOAU-UHFFFAOYSA-N phenylboronic acid Chemical compound OB(O)C1=CC=CC=C1 HXITXNWTGFUOAU-UHFFFAOYSA-N 0.000 description 1
- NIXKBAZVOQAHGC-UHFFFAOYSA-N phenylmethanesulfonic acid Chemical group OS(=O)(=O)CC1=CC=CC=C1 NIXKBAZVOQAHGC-UHFFFAOYSA-N 0.000 description 1
- FVZVCSNXTFCBQU-UHFFFAOYSA-N phosphanyl Chemical group [PH2] FVZVCSNXTFCBQU-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 125000000587 piperidin-1-yl group Chemical group [H]C1([H])N(*)C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 1
- 150000003053 piperidines Chemical class 0.000 description 1
- 125000003386 piperidinyl group Chemical group 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 229920001088 polycarbazole Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920000417 polynaphthalene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920002717 polyvinylpyridine Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- USPWKWBDZOARPV-UHFFFAOYSA-N pyrazolidine Chemical compound C1CNNC1 USPWKWBDZOARPV-UHFFFAOYSA-N 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- 150000003220 pyrenes Chemical class 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 150000003235 pyrrolidines Chemical class 0.000 description 1
- ZVJHJDDKYZXRJI-UHFFFAOYSA-N pyrroline Natural products C1CC=NC1 ZVJHJDDKYZXRJI-UHFFFAOYSA-N 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- DLJHXMRDIWMMGO-UHFFFAOYSA-N quinolin-8-ol;zinc Chemical compound [Zn].C1=CN=C2C(O)=CC=CC2=C1.C1=CN=C2C(O)=CC=CC2=C1 DLJHXMRDIWMMGO-UHFFFAOYSA-N 0.000 description 1
- 150000003248 quinolines Chemical class 0.000 description 1
- 125000005493 quinolyl group Chemical group 0.000 description 1
- 150000004060 quinone imines Chemical class 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- BPEVHDGLPIIAGH-UHFFFAOYSA-N ruthenium(3+) Chemical compound [Ru+3] BPEVHDGLPIIAGH-UHFFFAOYSA-N 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000010898 silica gel chromatography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 150000003413 spiro compounds Chemical class 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 125000003638 stannyl group Chemical group [H][Sn]([H])([H])* 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical compound C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 235000021286 stilbenes Nutrition 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 125000005017 substituted alkenyl group Chemical group 0.000 description 1
- 125000004426 substituted alkynyl group Chemical group 0.000 description 1
- 125000003107 substituted aryl group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 238000005211 surface analysis Methods 0.000 description 1
- 229940042055 systemic antimycotics triazole derivative Drugs 0.000 description 1
- 125000001712 tetrahydronaphthyl group Chemical group C1(CCCC2=CC=CC=C12)* 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 125000001113 thiadiazolyl group Chemical group 0.000 description 1
- 125000000335 thiazolyl group Chemical group 0.000 description 1
- ZMZDMBWJUHKJPS-UHFFFAOYSA-M thiocyanate group Chemical group [S-]C#N ZMZDMBWJUHKJPS-UHFFFAOYSA-M 0.000 description 1
- RSPCKAHMRANGJZ-UHFFFAOYSA-N thiohydroxylamine Chemical group SN RSPCKAHMRANGJZ-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- JOXIMZWYDAKGHI-UHFFFAOYSA-N toluene-4-sulfonic acid Chemical group CC1=CC=C(S(O)(=O)=O)C=C1 JOXIMZWYDAKGHI-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 125000002827 triflate group Chemical group FC(S(=O)(=O)O*)(F)F 0.000 description 1
- 125000002023 trifluoromethyl group Chemical group FC(F)(F)* 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- KBMBVTRWEAAZEY-UHFFFAOYSA-N trisulfane Chemical compound SSS KBMBVTRWEAAZEY-UHFFFAOYSA-N 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 1
- KAKZBPTYRLMSJV-UHFFFAOYSA-N vinyl-ethylene Natural products C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/16—Electron transporting layers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/06—Luminescent, e.g. electroluminescent, chemiluminescent materials containing organic luminescent materials
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/02—Boron compounds
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/322—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising boron
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Description
本發明係關於一種有機電激發光元件及其製造方法。詳細而言,係關於一種可用作電子機器之顯示部等顯示裝置或照明裝置等的有機電激發光元件及其製造方法。 The present invention relates to an organic electroluminescent device and a method of fabricating the same. More specifically, the present invention relates to an organic electroluminescence device that can be used as a display device such as a display portion of an electronic device, an illumination device, and the like, and a method of manufacturing the same.
作為可應用於顯示用裝置或照明之新穎發光元件,業界期待有機電激發光元件(有機EL元件)。 As a novel light-emitting element that can be applied to a display device or illumination, an organic electroluminescence element (organic EL element) is expected in the industry.
有機電激發光元件為如下元件:由於具有較薄、柔軟且為撓性的特徵,又,於用作顯示裝置之情形時,具有與目前成為主流之液晶顯示裝置或電漿顯示裝置相比,可實現高亮度、高精細之顯示,與液晶顯示裝置相比,視野角亦較廣等優異的特徵,故而期待今後作為電視或行動電話之顯示器等之利用擴大,或作為照明裝置之利用。 The organic electroluminescent device is characterized in that it has a thinner, softer, and flexible feature, and when used as a display device, has a liquid crystal display device or a plasma display device that is currently in the mainstream. It is possible to realize high-brightness and high-definition display, and has a superior viewing angle as compared with a liquid crystal display device. Therefore, it is expected to be expanded as a display of a television or a mobile phone or the like as an illumination device.
有機EL元件係具有於陽極與陰極之間夾持有包含含有發光性有機化合物而形成之發光層之1種或複數種層的構造,利用自陽極注入之電洞與自陰極注入之電子再結合時之能量來激發發光性有機化合物,而獲得發光。有機EL元件為電流驅動型元件,為了更有效地利用流動之電流,業界正對元件構造進行各種改良,又,亦對構成元件之層之材料進行各種研究。 The organic EL device has a structure in which one or a plurality of layers including a light-emitting layer containing a light-emitting organic compound are sandwiched between an anode and a cathode, and is recombined with electrons injected from the cathode by a hole injected from the anode. The energy of time to excite the luminescent organic compound to obtain luminescence. The organic EL element is a current-driven element, and in order to utilize the current flowing more efficiently, the industry is making various improvements in the structure of the element, and various materials for the layers constituting the element are also being studied.
有機電激發光元件具有於陰極與陽極之間積層有電子傳輸層、發光層、電洞傳輸層等複數層之構造,因而業界正對適於構成各層之 材料進行研究、開發。例如,揭示有包含具有含有硼原子之特定結構之化合物的發光材料(參照專利文獻1)。又,揭示有具有含有硼原子之特定結構之化合物適宜作為有機電激發光元件之電洞阻擋層(參照專利文獻2)。 The organic electroluminescence element has a structure in which a plurality of layers such as an electron transport layer, a light-emitting layer, and a hole transport layer are laminated between a cathode and an anode, and thus the industry is suitable for forming each layer. Materials are researched and developed. For example, a luminescent material containing a compound having a specific structure containing a boron atom is disclosed (refer to Patent Document 1). Further, a compound having a specific structure containing a boron atom is suitably used as a hole blocking layer of an organic electroluminescent device (see Patent Document 2).
又,對於利用自陽極注入之電洞與自陰極注入之電子之再結 合時之能量來激發發光性有機化合物而獲得發光的有機電激發光元件而言,重要的是自陽極之電洞注入、自陰極之電子注入均順利地進行,因此為了進行更順利之電洞注入、電子注入,亦對電洞注入層、電子注入層之材料進行各種研究,最近報告有使用聚乙亞胺(polyethyleneimine)或對聚乙亞胺進行修飾而成之化合物作為可塗佈之電子注入層之材料的順構造之有機電激發光元件(參照非專利文獻1~3)。 Moreover, for the re-junction of electrons injected from the anode and the electrons injected from the cathode In the case of an organic electroluminescence device that emits a light-emitting organic compound and emits light, it is important that the hole injection from the anode and the electron injection from the cathode are smoothly performed, so that a smoother hole is required. Injection, electron injection, and various materials for the hole injection layer and the electron injection layer have been studied. Recently, a compound modified with polyethyleneimine or polyethyleneimine has been reported as a coatable electron. An organic electroluminescence device having a smooth structure of a material of the injection layer (see Non-Patent Documents 1 to 3).
且說,關於陰極與陽極之間之層全部由有機化合物形成的有 機電激發光元件,結果容易因氧或水而劣化,為了防止該等之侵入,嚴格之密封不可或缺。上述情況成為使有機電激發光元件之製造步驟變得繁雜之原因。對此,提出有陰極與陽極之間之一部分層由無機氧化物形成的有機無機混合型電激發光元件(HOILED元件)(參照專利文獻3)。該元件中,藉由將電洞傳輸層、電子傳輸層變更為無機氧化物,可使用作為導電性氧化物電極之FTO或ITO作為陰極,且使用金作為陽極。就元件驅動之觀點而言,上述情況意味著消除了對電極之制約。結果,變得無須使用鹼金屬或鹼金屬化合物等功函數較小之金屬,可於無嚴格之密封之情況下發光。 此外,該HOILED元件係以陰極位於基板正上方為標準,具有上部電極為陽極之逆構造的特徵。隨著氧化物TFT之發展,在研究對大型有機EL顯示器之應用之過程中,因作為n型之氧化物TFT之特徵,逆構造之有機EL逐漸受到矚目。該HOILED元件作為逆構造有機EL元件之候補而期待有所發展。 And said that the layer between the cathode and the anode is formed entirely of organic compounds. Electromechanical excitation of optical elements is likely to be degraded by oxygen or water, and in order to prevent such intrusion, strict sealing is indispensable. The above-described situation is a cause of complicating the manufacturing steps of the organic electroluminescent device. In this regard, an organic-inorganic hybrid electroluminescent device (HOILED device) in which a partial layer between a cathode and an anode is formed of an inorganic oxide has been proposed (see Patent Document 3). In this device, by changing the hole transport layer and the electron transport layer to an inorganic oxide, FTO or ITO as a conductive oxide electrode can be used as a cathode, and gold can be used as an anode. From the point of view of component driving, the above situation means that the restriction on the electrode is eliminated. As a result, it becomes unnecessary to use a metal having a small work function such as an alkali metal or an alkali metal compound, and it is possible to emit light without a strict seal. Further, the HOILED element is characterized in that the cathode is located directly above the substrate and has a reverse structure in which the upper electrode is an anode. With the development of oxide TFTs, in the course of research on the application of large-scale organic EL displays, the reverse-structured organic EL has been attracting attention due to its characteristics as an n-type oxide TFT. The HOILED element is expected to be developed as a candidate for an inverse structure organic EL element.
作為先前之有機無機混合型有機電激發光元件,揭示有具有 陽極及陰極、由上述陽極與上述陰極所夾持之1層或複數層之有機化合物層、及位於上述陽極與上述有機化合物層之間及上述陰極與上述有機化合物層之間之至少1種以上之金屬氧化物薄膜的有機薄膜發光元件(參照專利文獻4)。又,揭示有具有陽極、陰極、陽極與陰極所夾持之1層或複數層之有機化合物層、及位於陽極與有機化合物層之間或陰極與有機化合物層之間的至少1種以上之金屬氧化物薄膜,且於其等各層間具有1層或複數層之對主要載子成為能量障壁,對相反載子不成為能量障壁之自組化單分子膜的有機薄膜電激發光元件(參照專利文獻5)。進而,揭示有具有將於聚乙烯基咔唑聚合物中添加有銥化合物作為摻雜劑者積層於金屬氧化物層上之構造的有機無機混合型有機電激發光元件(參照非專利文獻4)、或將於聚(9,9-二辛基茀基-2,7-二基)中添加有銥化合物者作為發光層的有機無機混合型有機電激發光元件(參照非專利文獻5)。 As a prior organic-inorganic hybrid type organic electroluminescent device, it is disclosed that An anode and a cathode, an organic compound layer of one or more layers sandwiched between the anode and the cathode, and at least one or more between the anode and the organic compound layer and between the cathode and the organic compound layer An organic thin film light-emitting device of a metal oxide thin film (see Patent Document 4). Further, an organic compound layer having one or a plurality of layers sandwiched between an anode, a cathode, an anode, and a cathode, and at least one metal or more between the anode and the organic compound layer or between the cathode and the organic compound layer are disclosed. An organic thin film electroluminescent device having an oxide film and a self-assembled monomolecular film in which the main carrier is an energy barrier between the respective layers, and the opposite carrier does not become an energy barrier (see Patent Document 5). Furthermore, an organic-inorganic hybrid organic electroluminescent device having a structure in which a ruthenium compound is added as a dopant to a metal oxide layer in a polyvinyl carbazole polymer is disclosed (see Non-Patent Document 4). Or an organic-inorganic hybrid organic electroluminescent device in which a ruthenium compound is added to a poly(9,9-dioctylfluorenyl-2,7-diyl group) as a light-emitting layer (see Non-Patent Document 5).
專利文獻1:日本特開2011-184430號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2011-184430
專利文獻2:國際公開2005/062676號 Patent Document 2: International Publication No. 2005/062676
專利文獻3:日本特開2009-70954號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2009-70954
專利文獻4:日本特開2007-53286號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 2007-53286
專利文獻5:日本特開2012-4492號公報 Patent Document 5: Japanese Laid-Open Patent Publication No. 2012-4492
非專利文獻1:Tao Xiong及其他3名,「應用物理快報(Applied Physics Letters)」93卷,2008年,pp123310-1 Non-Patent Document 1: Tao Xiong and three others, "Applied Physics Letters", Volume 93, 2008, pp123310-1
非專利文獻2:Yinhua Zhou及其他21名,「科學(Science)」336號,2012年,pp327 Non-Patent Document 2: Yinhua Zhou and 21 others, "Science" No. 336, 2012, pp327
非專利文獻3:Jianshan Chen及其他6名,「材料化學雜誌(Journal of Materials Chemistry)」2012年,22卷,pp5164 Non-Patent Document 3: Jianshan Chen and 6 others, Journal of Materials Chemistry, 2012, volume 22, pp5164
非專利文獻4:Henk J.Bolink及其他3名,「先進材料(Advanced Materials)」,2010年,第22卷,p2198-2201 Non-Patent Document 4: Henk J. Bolink and three others, "Advanced Materials", 2010, Vol. 22, p2198-2201
非專利文獻5:Henk J.Bolink及其他2名,「材料化學(Chemistry of Materials)」,2009年,第21卷,p439-441 Non-Patent Document 5: Henk J. Bolink and 2 others, "Chemistry of Materials", 2009, Vol. 21, p439-441
如上所述,對於構成有機電激發光元件之各層全部由有機物 構成之有機電激發光元件、以及有機無機混合型有機電激發光元件進行研究、開發。 As described above, all the layers constituting the organic electroluminescent device are composed of organic substances. The organic electroluminescence device and the organic-inorganic hybrid organic electroluminescence device are constructed and developed.
可認為有機無機混合型有機電激發光元件可兼具有機成分所具有之柔軟性及成形性、與無機成分所具有之強度及耐久性,又,與僅由有機化合物構成各層之有機電激發光元件相比,對氧或水之耐性較高,因此具有將元件內部之各層嚴格密閉之必要性降低,製造時之工序亦較少等優點,而期待實用化。另一方面,有機無機混合型有機電激發光元件與構成有機電激發光元件之各層全部由有機物構成之有機電激發光元件相比,於發光特性等各種特性方面尚有改善之餘地,因此謀求開發出發光特性等特性進一步提高之有機無機混合型有機電激發光元件。 It is considered that the organic-inorganic hybrid organic electroluminescent device can have both the flexibility and the formability of the organic component, the strength and durability of the inorganic component, and the organic electroluminescence of each layer composed only of the organic compound. Since the resistance to oxygen or water is higher than that of the element, the necessity of tightly sealing the layers inside the element is reduced, and the number of steps in the production is also small, and it is expected to be put into practical use. On the other hand, the organic-inorganic hybrid organic electroluminescent device has a room for improvement in various characteristics such as light-emitting characteristics as compared with an organic electroluminescent device in which all layers constituting the organic electroluminescent device are made of an organic material. An organic-inorganic hybrid organic electroluminescent device having improved characteristics such as luminescent characteristics has been developed.
通常,關於構成有機電激發光元件之各層全部由有機物構成之有機電激發光元件,已知有藉由利用真空蒸鍍等方法積層複數種低分子化合物層的方法、或於主體分子中摻雜客體分子的方法等,而獲得具有較高之發光特性之元件。另一方面,先前以來一直研究的有機無機混合型有機電激發光元件之構成之主流係塗佈成膜高分子化合物作為發光層。對此,本發明人為了改善有機無機混合型有機電激發光元件之發光特性,而對使用低分子化合物作為形成發光層或電洞傳輸層等之材料,並藉由真空蒸鍍等方法積層複數種低分子化合物層的形態或於主體分子中摻雜客體分子的形態進 行各種研究。如此發現,若設為使形成於陰極上之氧化物層與低分子化合物層相接觸之構成,則會產生發生如下不良情況之新課題:接觸於氧化物層之低分子化合物層發生結晶化,導致洩漏電流增大而電流效率降低,於明顯降低之情形時會因結晶化而無法獲得均勻之面發光。上述情況雖未觀測到,但可認為對具有塗佈型高分子有機層之元件亦存在不良影響,可認為解決該課題對有機無機混合型有機電激發光元件之壽命延長較為重要。 In general, an organic electroluminescence device in which all of the layers constituting the organic electroluminescence device are made of an organic material is known as a method of laminating a plurality of kinds of low molecular compound layers by vacuum deposition or the like, or doping in a host molecule. A method of a guest molecule or the like to obtain an element having a high luminescent property. On the other hand, the mainstream of the organic-inorganic hybrid organic electroluminescent device which has been studied in the past has been coated with a film-forming polymer compound as a light-emitting layer. In order to improve the light-emitting characteristics of the organic-inorganic hybrid organic electroluminescent device, the present inventors have used a low-molecular compound as a material for forming a light-emitting layer or a hole transport layer, and deposited a plurality of layers by vacuum evaporation or the like. The morphology of a low molecular compound layer or the morphology of a guest molecule in a host molecule Various studies are conducted. Thus, it has been found that when the oxide layer formed on the cathode is brought into contact with the low molecular compound layer, there is a new problem that the low molecular compound layer which is in contact with the oxide layer is crystallized. As a result, the leakage current increases and the current efficiency decreases, and in the case of a significant decrease, uniform surface luminescence cannot be obtained due to crystallization. Although the above-mentioned case is not observed, it is considered that the element having the coated polymer organic layer has an adverse effect, and it is considered that solving this problem is important for extending the life of the organic-inorganic hybrid organic electroluminescent device.
又,有機無機混合型有機電激發光元件中存在如下課題:自陰極注入之電子少於自陽極注入之電洞,而無法將自陽極注入之電洞充分地有效利用於發光。此外,原本無機層與有機層之長期良好之物理電性接觸較難,該情況導致裝置之壽命短而為較大課題。 Further, in the organic-inorganic hybrid organic electroluminescent device, there is a problem in that electrons injected from the cathode are smaller than holes injected from the anode, and the holes injected from the anode cannot be sufficiently effectively utilized for light emission. In addition, the long-term good physical electrical contact between the original inorganic layer and the organic layer is difficult, which leads to a short life of the device and is a major problem.
對於期待將利用擴大至顯示裝置或照明裝置等用途的有機電激發光元件而言,容易製造亦為重要要素,因此對無須嚴格密封之有機無機混合型有機電激發光元件之期待較高,謀求進一步提高有機無機混合型有機電激發光元件之發光效率及壽命的方法。此外,於顯示器用途中,具有逆構造之HOILED元件於電路上有用而盼望其發展。 In the case of an organic electroluminescence device that is expected to be expanded to a display device or a illuminating device, it is also an important factor for easy production. Therefore, there is a high expectation for an organic-inorganic hybrid organic electroluminescent device that does not require strict sealing. A method for further improving the luminous efficiency and life of an organic-inorganic hybrid organic electroluminescent device. In addition, in display applications, HOILED elements with inverse construction are useful on circuits and are expected to evolve.
本發明係鑒於上述現狀而完成者,其目的在於:(1)提供一 種使用低分子化合物層作為構成有機電激發光元件之層之情形時,低分子化合物之結晶化亦獲得抑制,發光特性優異的有機無機混合型有機電激發光元件;(2)提供一種發光特性較先前之有機無機混合型有機電激發光元件更優異的有機無機混合型有機電激發光元件;及(3)提供一種容易製造,又,發光效率及壽命亦優異的有機電激發光元件。 The present invention has been made in view of the above circumstances, and its object is to: (1) provide one When a low molecular compound layer is used as a layer constituting the organic electroluminescent device, the crystallization of the low molecular compound is also suppressed, and the organic-inorganic hybrid organic electroluminescent device having excellent luminescent properties; (2) providing a luminescent property An organic-inorganic hybrid organic electroluminescent device that is superior to the prior organic-inorganic hybrid organic electroluminescent device; and (3) provides an organic electroluminescent device that is easy to manufacture and has excellent luminous efficiency and lifetime.
本發明人發現,藉由使第1電極與第2電極之間具有金屬氧 化物層的有機無機混合型有機電激發光元件成為於金屬氧化物層上具有由有機化合物形成之緩衝層者,可解決上述課題。此處所謂之緩衝層,係指解決上述有機無機混合型有機電激發光元件之課題即發光層等有機層之結 晶化、較低之電子注入能力、以及界面之物理上化學上之長期穩定性的層。 具體而言,為了防止由存在於氧化物表面上之凹凸等引起之結晶化,較佳為更高分子量之有機物,此外,為了提高電子注入能力,較佳為使直至發光層之能階形成為階梯狀,進而為了順利地進行作為逆構造所特有之問題而存在的能量之泵式供給(pumping)(逐步提高能階(上坡(up hill))),進而較佳為藉由摻雜等方法來增加載子數。為了提高電子注入能力,亦有藉由將較多氮元素配置於表面上而產生界面偶極的方法,該方法亦較佳。並且,為了使該等長期穩定地存在,較佳為準備防止局部電場之存在或能夠承受局部電場之存在的化學鍵。前者係由利用摻雜等方法實現之載子數增大引起之廣範圍之能階變化、與階梯狀之平衡良好之電子能階之形成。後者係緩衝層有機物與氧化物表面之金屬元素等之化學鍵。將具體例記載於以下。 The inventors have found that by having metal oxygen between the first electrode and the second electrode The organic-inorganic hybrid organic electroluminescent device of the chemical layer has a buffer layer formed of an organic compound on the metal oxide layer, and the above problem can be solved. The buffer layer referred to herein is a junction of an organic layer such as a light-emitting layer that solves the above-described problem of the organic-inorganic hybrid organic electroluminescent device. A layer of crystallization, lower electron injecting ability, and physical chemical long-term stability of the interface. Specifically, in order to prevent crystallization caused by irregularities or the like existing on the surface of the oxide, an organic substance having a higher molecular weight is preferable, and in order to improve the electron injecting ability, it is preferable to form the energy level up to the light-emitting layer. In order to smoothly perform the pumping of energy (gradually increasing the energy level (uphill)), which is a problem unique to the reverse structure, it is preferable to do it by doping or the like. Method to increase the number of carriers. In order to improve the electron injecting ability, there is also a method of generating an interface dipole by disposing a large amount of nitrogen elements on the surface, which is also preferable. Further, in order to stably exist such long-term, it is preferable to prepare a chemical bond which prevents the existence of a local electric field or can withstand the existence of a local electric field. The former is formed by a wide range of energy level changes caused by an increase in the number of carriers by doping or the like, and a good energy balance with a stepped shape. The latter is a chemical bond between the organic layer of the buffer layer and the metal element on the surface of the oxide. Specific examples are described below.
本發明人對針對改善有機無機混合型有機電激發光元件之發光特性之方法進行各種研究之過程中所發現的低分子化合物層之結晶化之新課題之解決方法進行研究,結果發現,若設為於形成於陰極上之氧化物層與發光層等低分子化合物層之間配置藉由塗佈有機化合物而形成之特定膜厚之緩衝層,並於該緩衝層上積層有發光層等低分子化合物層的構成,則低分子化合物層中之低分子化合物之結晶化獲得抑制,藉此於有機無機混合型有機電激發光元件具有由低分子化合物形成之層作為發光層等之情形時,亦可獲得洩漏電流之抑制、及均勻之面發光。 The present inventors have studied a solution to a new problem of crystallization of a low molecular compound layer which has been found in various processes for improving the luminescent properties of an organic-inorganic hybrid organic electroluminescent device, and as a result, found that A buffer layer having a specific film thickness formed by coating an organic compound is disposed between the oxide layer formed on the cathode and the low molecular compound layer such as the light-emitting layer, and a low molecular layer such as a light-emitting layer is laminated on the buffer layer. In the case of the compound layer, the crystallization of the low molecular compound in the low molecular compound layer is suppressed, and when the organic-inorganic hybrid organic electroluminescent device has a layer formed of a low molecular compound as a light-emitting layer or the like, Suppression of leakage current and uniform surface illumination are obtained.
進而本發明人發現,若使用具有特定結構之含硼化合物或含硼聚合物作為形成緩衝層之有機化合物,則由該有機化合物形成之緩衝層亦發揮出作為電子傳輸層之優異功能。 Further, the inventors have found that when a boron-containing compound having a specific structure or a boron-containing polymer is used as the organic compound forming the buffer layer, the buffer layer formed of the organic compound also exhibits an excellent function as an electron transport layer.
進而,本發明人對改善有機無機混合型有機電激發光元件之發光特性之方法進行各種研究,結果發現,若製成於第1電極與第2電極之間具有 金屬氧化物層,於該金屬氧化物層上具有由有機化合物形成之緩衝層的構成之有機電激發光元件,並使該有機電激發光元件之緩衝層中含有還原劑,則還原劑作為供給電子之n型摻雜劑發揮作用,與先前之有機無機混合型有機電激發光元件相比,成為發光特性優異之有機電激發光元件。進而亦發現,較佳為製成於第1電極與第2電極之間依序具有第1金屬氧化物層、緩衝層、積層於該緩衝層上之包含發光層之低分子化合物層、及第2金屬氧化物層的構成之有機電激發光元件,並使該有機電激發光元件之緩衝層中含有還原劑的形態之有機電激發光元件。 Further, the present inventors conducted various studies on a method for improving the light-emitting characteristics of an organic-inorganic hybrid organic electroluminescent device, and as a result, it has been found that the first electrode and the second electrode are formed between the first electrode and the second electrode. a metal oxide layer having an organic electroluminescence element having a buffer layer formed of an organic compound on the metal oxide layer, and a reducing agent contained in a buffer layer of the organic electroluminescence element; The electron n-type dopant functions as an organic electroluminescence device having excellent light-emitting characteristics as compared with the conventional organic-inorganic hybrid organic electroluminescence device. Further, it has been found that the first metal oxide layer, the buffer layer, and the low molecular compound layer including the light emitting layer laminated on the buffer layer are preferably formed between the first electrode and the second electrode. An organic electroluminescence device having a structure in which a metal oxide layer is composed of a metal oxide layer and a buffer layer of the organic electroluminescence device contains a reducing agent.
進而,本發明人對進一步提高無需嚴格密封之有機無機混合型有機電激發光元件之發光效率及壽命之方法進行各種研究,結果發現,若於陽極與陰極之間所具有之金屬氧化物層上形成特定厚度之含氮膜,則電子注入特性提高,元件壽命延長。其中,亦發現更佳為具有構成含氮膜之原子中之氮原子比率較高的含氮膜或藉由使含氮化合物分解而形成含氮膜之方法所形成的含氮膜者,進而發現,進而較佳為藉由含氮化合物之分解而形成且構成含氮膜之原子中之氮原子比率較高者。本發明人發現,若使用此種含氮膜作為構成有機無機混合型有機電激發光元件之層,則成為不僅發光效率優異,而且驅動穩定性較高,驅動壽命較長的有機電激發光元件,想到可完美地解決上述課題,從而完成了本發明。 Further, the present inventors conducted various studies on a method of further improving the luminous efficiency and lifetime of an organic-inorganic hybrid type organic electroluminescent device which does not require strict sealing, and as a result, found that it is present on the metal oxide layer between the anode and the cathode. When a nitrogen-containing film having a specific thickness is formed, electron injection characteristics are improved and the life of the device is prolonged. Among them, it has been found that a nitrogen-containing film formed by a method of forming a nitrogen-containing film having a high ratio of nitrogen atoms in atoms constituting the nitrogen-containing film or a method of decomposing a nitrogen-containing compound is further found. Further, it is preferably one which is formed by decomposition of a nitrogen-containing compound and which has a higher ratio of nitrogen atoms in atoms constituting the nitrogen-containing film. The present inventors have found that when such a nitrogen-containing film is used as a layer constituting an organic-inorganic hybrid organic electroluminescent device, it is an organic electroluminescence device which is excellent not only in luminous efficiency but also has high driving stability and long driving life. The present invention has been completed in view of solving the above problems perfectly.
即,本發明係一種有機電激發光元件,其係具有積層有複數 層之構造者,其特徵在於:上述有機電激發光元件於第1電極與第2電極之間具有金屬氧化物層,於上述金屬氧化物層上具有由有機化合物形成之緩衝層。 That is, the present invention is an organic electroluminescent device having a laminate In the layer structure, the organic electroluminescent device has a metal oxide layer between the first electrode and the second electrode, and has a buffer layer made of an organic compound on the metal oxide layer.
又,如下有機電激發光元件為本發明之有機電激發光元件之第1較佳形態,該有機電激發光元件係具有積層有複數層之構造者,其特徵在於:上述有機電激發光元件於第1電極與第2電極之間依序具有第1金屬氧化 物層、緩衝層、積層於上述緩衝層上之包含發光層之低分子化合物層、及第2金屬氧化物層,上述緩衝層為藉由塗佈含有有機化合物之溶液而形成之平均厚度為5~50nm之層。 Further, the organic electroluminescence device is a first preferred embodiment of the organic electroluminescence device of the present invention, and the organic electroluminescence device has a structure in which a plurality of layers are laminated, and the organic electroluminescence device is characterized in that the organic electroluminescence device First metal oxidation between the first electrode and the second electrode a material layer, a buffer layer, a low molecular compound layer comprising a light emitting layer laminated on the buffer layer, and a second metal oxide layer, wherein the buffer layer is formed by applying a solution containing an organic compound to have an average thickness of 5 ~50nm layer.
進而,如下有機電激發光元件為本發明之有機電激發光元件之第2較佳形態,該有機電激發光元件係具有積層有複數層之構造者,其特徵在於:上述有機電激發光元件於第1電極與第2電極之間依序具有第1金屬氧化物層、緩衝層、積層於上述緩衝層上之包含發光層之低分子化合物層、及第2金屬氧化物層,上述緩衝層含有還原劑。 Further, the organic electroluminescence device is a second preferred embodiment of the organic electroluminescence device of the present invention, and the organic electroluminescence device has a structure in which a plurality of layers are laminated, and the organic electroluminescence device is characterized in that the organic electroluminescence device is The first metal oxide layer, the buffer layer, the low molecular compound layer including the light emitting layer and the second metal oxide layer laminated on the buffer layer, and the buffer layer are sequentially provided between the first electrode and the second electrode. Contains a reducing agent.
進而,如下有機電激發光元件為本發明之有機電激發光元件之第3較佳形態,該有機電激發光元件係具有於陽極與形成於基板上之陰極之間積層有複數層之構造者,其特徵在於:上述有機電激發光元件於陽極與陰極之間具有金屬氧化物層,於上述金屬氧化物層上具有由含氮膜構成且平均厚度為3~150nm之層。 Further, the organic electroluminescence device is a third preferred embodiment of the organic electroluminescence device of the present invention, and the organic electroluminescence device has a structure in which a plurality of layers are laminated between an anode and a cathode formed on a substrate. The organic electroluminescent device has a metal oxide layer between the anode and the cathode, and has a layer composed of a nitrogen-containing film and having an average thickness of 3 to 150 nm on the metal oxide layer.
以下對本發明進行詳細說明。 The invention is described in detail below.
再者,組合以下所記載之本發明之各較佳形態2個以上者亦又為本發明之較佳形態。 Further, a combination of two or more preferred embodiments of the present invention described below is also a preferred embodiment of the present invention.
本發明之有機電激發光元件係具有積層有複數層之構造之 有機電激發光元件,且於第1電極與第2電極之間具有金屬氧化物層,於該金屬氧化物層上具有由有機化合物形成之緩衝層。 The organic electroluminescent device of the present invention has a structure in which a plurality of layers are laminated. The organic electroluminescent device has a metal oxide layer between the first electrode and the second electrode, and has a buffer layer formed of an organic compound on the metal oxide layer.
第1電極為形成於基板上之陰極,於與作為第2電極之陽極之間依序具有金屬氧化物層、以及由有機化合物形成之緩衝層的形態為本發明之有機電激發光元件之較佳形態。 The first electrode is a cathode formed on a substrate, and has a metal oxide layer and a buffer layer formed of an organic compound in sequence with the anode as the second electrode, which is the organic electroluminescent device of the present invention. Good form.
又,緩衝層為藉由塗佈含有有機化合物之溶液而形成之平均厚度3nm以上之層,該緩衝層鄰接形成於金屬氧化物層上的形態亦為本發明之有機電激發光元件之較佳形態。 Further, the buffer layer is a layer having an average thickness of 3 nm or more formed by applying a solution containing an organic compound, and the buffer layer is formed adjacent to the metal oxide layer, which is also preferable for the organic electroluminescent device of the present invention. form.
本發明之有機電激發光元件有元件之層構成或緩衝層不同之3個較佳形態。以下,對該等3個較佳形態依序進行說明。再者,符合該等3個較佳形態之2個以上的形態亦又為本發明之有機電激發光元件之較佳形態。 The organic electroluminescent device of the present invention has three preferred embodiments in which the layer structure or the buffer layer of the device is different. Hereinafter, the three preferred embodiments will be described in order. Further, two or more forms conforming to the three preferred embodiments are also preferred embodiments of the organic electroluminescent device of the present invention.
[本發明之第1較佳形態之有機電激發光元件] [Organic Electroluminescent Device of the First Preferred Embodiment of the Present Invention]
本發明之第1較佳形態之有機電激發光元件(以下亦記作本發明之第1有機電激發光元件)於第1電極與第2電極之間依序具有第1金屬氧化物層、緩衝層、積層於該緩衝層上之包含發光層之低分子化合物層、及第2金屬氧化物層,且緩衝層之平均厚度為3nm。進而,緩衝層之平均厚度較佳為5~50nm。又,緩衝層亦較佳為具有使自形成於基板上之電極起直至發光層之各層之電子能階之高低順序成為該等層之積層順序的電子能階者。 The organic electroluminescent device of the first preferred embodiment of the present invention (hereinafter also referred to as the first organic electroluminescent device of the present invention) has a first metal oxide layer between the first electrode and the second electrode. The buffer layer, the low molecular compound layer including the light emitting layer and the second metal oxide layer laminated on the buffer layer, and the buffer layer has an average thickness of 3 nm. Further, the average thickness of the buffer layer is preferably 5 to 50 nm. Further, it is preferable that the buffer layer has an electron energy level in which the order of the electron levels from the electrodes formed on the substrate to the layers of the light-emitting layer is the order of the layers of the layers.
本發明之第1有機電激發光元件藉由具有此種構成,而於使發光層等構成有機電激發光元件之層為低分子化合物層之情形時,亦可抑制低分子化合物層之結晶化,可抑制洩漏電流,獲得均勻之面發光。 When the first organic electroluminescent device of the present invention has such a configuration, when the layer constituting the organic electroluminescent device such as the light-emitting layer is a low molecular compound layer, the crystallization of the low molecular compound layer can be suppressed. It can suppress leakage current and obtain uniform surface illumination.
有機無機混合型有機電激發光元件中低分子化合物層發生結晶化之原因可認為如下所述。 The reason why the low molecular compound layer is crystallized in the organic-inorganic hybrid organic electroluminescent device can be considered as follows.
有機無機混合型有機電激發光元件中,存在配置於玻璃等之基板上之第1電極及第1金屬氧化物層,並於其上成膜包含發光層之低分子化合物層。此處,根據先前之方法,第1金屬氧化物層係利用噴霧熱分解法、溶膠-凝膠法、濺鍍法等方法而成膜,表面不平滑而具有凹凸。於在該第1金屬氧化物層上利用真空蒸鍍等方法成膜包含發光層之低分子化合物層之情形時,第1金屬氧化物層之表面之凹凸成為結晶核,促進接觸於第1金屬氧化物層之低分子化合物層之結晶化。因此,即便完成有機電激發光元件,亦會有較大之洩漏電流流動,發光面變得不均勻,而無法獲得能夠經受實用之元件。 In the organic-inorganic hybrid organic electroluminescence device, the first electrode and the first metal oxide layer are disposed on a substrate such as glass, and a low molecular compound layer containing the light-emitting layer is formed thereon. Here, according to the conventional method, the first metal oxide layer is formed by a method such as a spray pyrolysis method, a sol-gel method, or a sputtering method, and the surface is not smooth and has irregularities. When a low molecular compound layer containing a light-emitting layer is formed on the first metal oxide layer by a method such as vacuum deposition, the unevenness on the surface of the first metal oxide layer serves as a crystal nucleus and promotes contact with the first metal. Crystallization of the low molecular compound layer of the oxide layer. Therefore, even if the organic electroluminescence element is completed, a large leakage current flows, and the light-emitting surface becomes uneven, and a component that can withstand practical use cannot be obtained.
另一方面,第1電極上不具有第1金屬氧化物層之所謂之通常構造之有機電激發光元件中,可獲取將第1電極表面研磨成充分平滑者,即便於第1電極表面上直接成膜包含發光層之低分子化合物層,亦不易引起結晶化之問題。因此,此種結晶化係有機無機混合型有機電激發光元件所特有之課題,本發明之第1有機電激發光元件藉由具有如上所述之構成,可解決此種有機無機混合型有機電激發光元件所特有之課題。 On the other hand, in the organic electroluminescence device of the so-called normal structure in which the first metal oxide layer is not provided on the first electrode, the surface of the first electrode can be obtained to be sufficiently smooth, even on the surface of the first electrode. The formation of a low molecular compound layer containing a light-emitting layer also causes a problem of crystallization. Therefore, the first organic electroluminescence device of the present invention has the above-described configuration, and the organic-inorganic hybrid organic battery can be solved by the above-described organic-inorganic hybrid organic electroluminescent device. A problem specific to the excitation light element.
於本發明之第1有機電激發光元件為上述較佳構造者之情 形時,只要為於第1電極與第2電極之間依序具有第1金屬氧化物層、由有機化合物形成之平均厚度為5~50nm之緩衝層、積層於該緩衝層上之包含發光層之低分子化合物層、及第2金屬氧化物層者,則亦可具有該等以外之其他層。 The first organic electroluminescent device of the present invention is the above-mentioned preferred constructor In the case of a shape, a first metal oxide layer is sequentially provided between the first electrode and the second electrode, a buffer layer having an average thickness of 5 to 50 nm formed of an organic compound, and a light-emitting layer laminated on the buffer layer. The low molecular compound layer and the second metal oxide layer may have other layers than those described above.
再者,本發明中,所謂低分子化合物,意指並非高分子化合物(聚合物)之化合物,而未必意指分子量較低之化合物。 Further, in the present invention, the term "low molecular compound" means a compound which is not a polymer compound (polymer), and does not necessarily mean a compound having a relatively low molecular weight.
上述所謂包含發光層之低分子化合物層,係指由低分子化合 物形成的1個層、或由低分子化合物形成之複數層積層而成且其中1個層為發光層的層。即,所謂包含發光層之低分子化合物層,係指由低分子化合物形成的發光層、或由低分子化合物形成之發光層與由低分子化合物形成之其他層積層而成者中之任一者。由低分子化合物形成之其他層可為1層,亦可為2層以上。又,發光層與其他層之積層順序並無特別限制。 The above-mentioned "low molecular compound layer containing a light-emitting layer" means low molecular combination One layer formed of the substance or a plurality of layers formed of a low molecular compound and one of which is a layer of the light-emitting layer. In other words, the low molecular compound layer including the light-emitting layer means any one of a light-emitting layer formed of a low molecular compound or a light-emitting layer formed of a low molecular compound and another laminated layer formed of a low molecular compound. . The other layer formed of the low molecular compound may be one layer or two or more layers. Further, the order of lamination of the light-emitting layer and the other layers is not particularly limited.
上述由低分子化合物形成之其他層較佳為電洞傳輸層或電 子傳輸層。即,於低分子化合物層為由複數層構成者之情形時,較佳為具有電洞傳輸層及/或電子傳輸層作為發光層以外之其他層。如此,有機電激發光元件具有電洞傳輸層及/或電子傳輸層作為與發光層不同之獨立之層的形態為本發明之第1有機電激發光元件之較佳實施形態之一。 The other layer formed of the low molecular compound is preferably a hole transport layer or electricity. Sub transport layer. That is, in the case where the low molecular compound layer is composed of a plurality of layers, it is preferred to have a hole transport layer and/or an electron transport layer as a layer other than the light emitting layer. As described above, the organic electroluminescence device has a hole transport layer and/or an electron transport layer as a separate layer from the light-emitting layer, and is one of preferred embodiments of the first organic electroluminescence device of the present invention.
於本發明之第1有機電激發光元件具有電洞傳輸層作為獨立之層之情 形時,較佳為於發光層與第2金屬氧化物層之間具有電洞傳輸層。於本發明之第1有機電激發光元件具有電子傳輸層作為獨立之層之情形時,較佳為於由有機化合物形成之緩衝層與發光層之間具有電子傳輸層。 The first organic electroluminescent device of the present invention has a hole transport layer as an independent layer In the case of a shape, it is preferred to have a hole transport layer between the light-emitting layer and the second metal oxide layer. In the case where the first organic electroluminescent device of the present invention has an electron transport layer as an independent layer, it is preferred to have an electron transport layer between the buffer layer formed of the organic compound and the light-emitting layer.
於本發明之第1有機電激發光元件不具有電洞傳輸層或電子傳輸層作為獨立之層之情形時,作為本發明之第1有機電激發光元件之必需構成而具有之層之任一者兼具該等層之功能。 When the first organic electroluminescent device of the present invention does not have a hole transport layer or an electron transport layer as an independent layer, any one of the layers of the first organic electroluminescent device of the present invention has a necessary structure. Both have the functions of these layers.
本發明之第1有機電激發光元件之較佳形態之一為有機電 激發光元件僅由第1電極、第1金屬氧化物層、由有機化合物形成之緩衝層、發光層、電洞傳輸層、第2金屬氧化物層、第2電極構成,且該等層之任一者兼具電子傳輸層之功能的形態。 One of the preferred embodiments of the first organic electroluminescent device of the present invention is organic electricity. The excitation light element is composed only of the first electrode, the first metal oxide layer, the buffer layer formed of the organic compound, the light-emitting layer, the hole transport layer, the second metal oxide layer, and the second electrode, and the layers are One has the function of the function of the electron transport layer.
又,有機電激發光元件僅由第1電極、第1金屬氧化物層、由有機化合物形成之緩衝層、發光層、第2金屬氧化物層、第2電極構成,且該等層之任一者兼具電洞傳輸層及電子傳輸層之功能的形態亦又為本發明之第1有機電激發光元件之較佳形態之一。 Further, the organic electroluminescence device is composed only of the first electrode, the first metal oxide layer, the buffer layer formed of the organic compound, the light-emitting layer, the second metal oxide layer, and the second electrode, and any of the layers The form of the function of the hole transport layer and the electron transport layer is also one of the preferred embodiments of the first organic electroluminescence device of the present invention.
本發明之第1有機電激發光元件中,第1電極為陰極,第2 電極為陽極。本發明之有機電激發光元件中,作為陽極及陰極,可適當使用公知之導電性材料,但就光提取而言,較佳為至少任一者為透明。作為公知之透明導電性材料之例子,可列舉:ITO(摻錫氧化銦)、ATO(摻銻氧化銦)、IZO(摻銦氧化鋅)、AZO(摻鋁氧化鋅)、FTO(摻氟氧化銦)、In3O3、SnO2、含Sb之SnO2、含Al之ZnO等氧化物等。作為不透明之導電性材料之例子,可列舉:鈣、鎂、鋁、錫、銦、銅、銀、金、鉑或該等之合金等。 In the first organic electroluminescence device of the present invention, the first electrode is a cathode, and the second electrode is an anode. In the organic electroluminescent device of the present invention, a known conductive material can be suitably used as the anode and the cathode. However, at least one of the light extraction is preferably transparent. Examples of the known transparent conductive material include ITO (tin-doped indium oxide), ATO (indium-doped indium oxide), IZO (indium-doped zinc oxide), AZO (aluminized zinc oxide-doped), and FTO (fluorine-doped oxidation). indium), In 3 O 3, SnO 2, Sb-containing of SnO 2, or ZnO containing Al of oxides. Examples of the opaque conductive material include calcium, magnesium, aluminum, tin, indium, copper, silver, gold, platinum, or the like.
作為陰極,其中,較佳為ITO、IZO、FTO。 As the cathode, among them, ITO, IZO, and FTO are preferable.
作為陽極,可列舉:Au、Pt、Ag、Cu、Al或包含該等之合金等。該等之中,較佳為Au、Ag、Al。 Examples of the anode include Au, Pt, Ag, Cu, Al, and alloys containing the same. Among these, Au, Ag, and Al are preferable.
如上所述,由於可將通常用於陽極之金屬用於陰極及陽極,故而於設想自上部電極提取光之情形(頂部發光(top emission)構造之情形)時亦可容易地實現,可選擇各種上述電極而用於各電極。例如,下部電極為Al,上部電極為ITO等。 As described above, since the metal generally used for the anode can be used for the cathode and the anode, it can be easily realized in the case where it is assumed that light is extracted from the upper electrode (in the case of a top emission structure), and various types can be selected. The above electrodes are used for the respective electrodes. For example, the lower electrode is Al, and the upper electrode is ITO or the like.
上述第1電極之平均厚度並無特別限制,較佳為10~500 nm。更佳為100~200nm。第1電極之平均厚度可藉由觸針式段差計、分光橢圓偏光儀測定。 The average thickness of the first electrode is not particularly limited, and is preferably 10 to 500. Nm. More preferably, it is 100 to 200 nm. The average thickness of the first electrode can be measured by a stylus type step meter and a spectroscopic ellipsometer.
上述第2電極之平均厚度並無特別限定,較佳為10~1000nm。更佳為30~150nm。又,於使用非透射之材料之情形時,例如亦可藉由使平均厚度成為10~30nm左右,而用作頂部發光型及透明型之陽極。 The average thickness of the second electrode is not particularly limited, but is preferably 10 to 1000 nm. More preferably 30 to 150 nm. Further, when a non-transmissive material is used, for example, it can be used as an anode of a top emission type and a transparent type by making the average thickness into about 10 to 30 nm.
第2電極之平均厚度可藉由晶體振盪膜厚儀於成膜時測定。 The average thickness of the second electrode can be measured by a crystal oscillation film thickness gauge at the time of film formation.
上述第1金屬氧化物層係作為電子注入層或電極(陰極)而 發揮功能之層,第2金屬氧化物層係作為電洞注入層而發揮功能之層。 The first metal oxide layer is used as an electron injection layer or an electrode (cathode) The functional layer is a layer in which the second metal oxide layer functions as a hole injection layer.
第1金屬氧化物層為由單質之金屬氧化物膜之一層構成的層、或為作為積層及/或混合單質或兩種以上之金屬氧化物而成之層的半導體或絕緣體積層薄膜之層。構成金屬氧化物之金屬元素係自由鎂、鈣、鍶、鋇、鈦、鋯、鉿、釩、鈮、鉭、鉻、鉬、鎢、錳、銦、鎵、鐵、鈷、鎳、銅、鋅、鎘、鋁、矽、錫所組成之群中選擇。該等之中,較佳為構成積層或混合金屬氧化物層之至少一種金屬元素由鎂、鋁、鈣、鋯、鉿、矽、鈦、鋅、錫構成之層,其中,若為單質之金屬氧化物,則較佳為包含選自由氧化鎂、氧化鎢、氧化鈮、氧化鐵、氧化鋁、氧化鋯、氧化鉿、氧化矽、氧化鈦、氧化鋅、氧化錫所組成之群中之金屬氧化物。 The first metal oxide layer is a layer composed of one layer of a single metal oxide film, or a layer of a semiconductor or an insulating volume layer film which is a layer formed by laminating and/or mixing a simple substance or two or more metal oxides. The metal elements constituting the metal oxide are free of magnesium, calcium, barium, strontium, titanium, zirconium, hafnium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, indium, gallium, iron, cobalt, nickel, copper, zinc. Choose from a group consisting of cadmium, aluminum, antimony and tin. Among these, it is preferable that at least one metal element constituting the laminated or mixed metal oxide layer is composed of magnesium, aluminum, calcium, zirconium, hafnium, tantalum, titanium, zinc, tin, and if it is a simple metal The oxide preferably contains a metal oxide selected from the group consisting of magnesium oxide, tungsten oxide, cerium oxide, iron oxide, aluminum oxide, zirconium oxide, cerium oxide, cerium oxide, titanium oxide, zinc oxide, and tin oxide. Things.
上述積層及/或混合單質或兩種以上之金屬氧化物而成之 層之例子,可列舉:積層及/或混合氧化鈦/氧化鋅、氧化鈦/氧化鎂、氧化鈦/氧化鋯、氧化鈦/氧化鋁、氧化鈦/氧化鉿、氧化鈦/氧化矽、 氧化鋅/氧化鎂、氧化鋅/氧化鋯、氧化鋅/氧化鉿、氧化鋅/氧化矽、氧化鈣/氧化鋁等金屬氧化物之組合而成者,或積層及/或混合氧化鈦/氧化鋅/氧化鎂、氧化鈦/氧化鋅/氧化鋯、氧化鈦/氧化鋅/氧化鋁、氧化鈦/氧化鋅/氧化鉿、氧化鈦/氧化鋅/氧化矽、氧化銦/氧化鎵/氧化鋅等三種金屬氧化物之組合而成者等。該等之中亦包含作為特殊之組成而顯示出良好之特性的作為氧化物半導體之IGZO或作為駐極體之12CaO.7Al2O3。 Examples of the layer formed by laminating and/or mixing a single or two or more metal oxides include laminated and/or mixed titanium oxide/zinc oxide, titanium oxide/magnesium oxide, titanium oxide/zirconia, and titanium oxide. /alumina, titanium oxide / cerium oxide, titanium oxide / cerium oxide, zinc oxide / magnesium oxide, zinc oxide / zirconium oxide, zinc oxide / cerium oxide, zinc oxide / cerium oxide, calcium oxide / alumina and other metal oxides Combination, or laminated and / or mixed titanium oxide / zinc oxide / magnesium oxide, titanium oxide / zinc oxide / zirconia, titanium oxide / zinc oxide / aluminum oxide, titanium oxide / zinc oxide / cerium oxide, titanium oxide / A combination of three kinds of metal oxides such as zinc oxide/yttria, indium oxide/gallium oxide/zinc oxide. These include IGZO as an oxide semiconductor or 12CaO as an electret which exhibits good characteristics as a special composition. 7Al 2 O 3 .
再者,本發明中,薄片電阻低於100Ω/□者被分類為導電體,薄片電阻高於100Ω/□者被分類為半導體或絕緣體。因此,作為透明電極而已知之ITO(摻錫氧化銦)、ATO(摻銻氧化銦)、IZO(摻銦氧化鋅)、AZO(摻鋁氧化鋅)、FTO(摻氟氧化銦)等之薄膜由於導電性較高而不包含於半導體或絕緣體之範疇,故而不符合構成本發明之第1金屬氧化物層之一層。 Further, in the present invention, those having a sheet resistance of less than 100 Ω/□ are classified as electric conductors, and those having sheet resistances higher than 100 Ω/□ are classified as semiconductors or insulators. Therefore, thin films of ITO (tin-doped indium oxide), ATO (indium-doped indium oxide), IZO (indium-doped zinc oxide), AZO (aluminum-doped zinc oxide), FTO (fluorine-doped indium oxide), etc., which are known as transparent electrodes, are known. The conductivity is high and is not included in the range of the semiconductor or the insulator, so it does not conform to one of the layers of the first metal oxide layer constituting the present invention.
作為上述第2金屬氧化物層,並無特別限制,可使用氧化釩 (V2O5)、氧化鉬(MoO3)、氧化鎢(WO3)、氧化釕(RuO2)等之1種或2 種以上。該等之中,較佳為以氧化釩或氧化鉬為主成分者。若第2金屬氧化物層由以氧化釩或氧化鉬為主成分者構成,則第2金屬氧化物層成為自第2電極注入電洞並傳輸至發光層或電洞傳輸層的作為電洞注入層之功能更優異者。又,氧化釩或氧化鉬由於其本身之電洞傳輸性較高,故而具有亦可較佳地防止自第2電極向發光層或電洞傳輸層的電洞之注入效率降低的優點。更佳為由氧化釩及/或氧化鉬構成者。 The second metal oxide layer is not particularly limited, and one type of vanadium oxide (V 2 O 5 ), molybdenum oxide (MoO 3 ), tungsten oxide (WO 3 ), ruthenium oxide (RuO 2 ), or the like may be used. More than 2 types. Among these, it is preferred to use vanadium oxide or molybdenum oxide as a main component. When the second metal oxide layer is composed of vanadium oxide or molybdenum oxide as a main component, the second metal oxide layer is injected into the hole from the second electrode and transmitted to the light-emitting layer or the hole transport layer as a hole injection. The function of the layer is more excellent. Further, since vanadium oxide or molybdenum oxide has high hole transportability itself, it has an advantage that the injection efficiency of the hole from the second electrode to the light-emitting layer or the hole transport layer can be preferably prevented from being lowered. More preferably, it is composed of vanadium oxide and/or molybdenum oxide.
上述第1金屬氧化物層之平均厚度可容許為1nm至數μm 左右,並無特別限定,但就製成可以低電壓驅動之有機電激發光元件之方面而言,較佳為1~1000nm。更佳為2~100nm。 The average thickness of the first metal oxide layer may be allowed to be 1 nm to several μm. The left and right sides are not particularly limited, but from the viewpoint of forming an organic electroluminescence device that can be driven at a low voltage, it is preferably 1 to 1000 nm. More preferably 2 to 100 nm.
上述第2金屬氧化物層之平均厚度並無特別限定,較佳為1~1000nm。 更佳為5~50nm。 The average thickness of the second metal oxide layer is not particularly limited, but is preferably 1 to 1000 nm. More preferably 5 to 50 nm.
第1金屬氧化物層之平均厚度可藉由觸針式段差計、分光橢圓偏光儀測定。 The average thickness of the first metal oxide layer can be measured by a stylus type step meter or a spectroscopic ellipsometer.
第2金屬氧化物層之平均厚度可藉由晶體振盪膜厚儀於成膜時測定。 The average thickness of the second metal oxide layer can be measured by a crystal oscillation film thickness gauge at the time of film formation.
作為發光層之材料,可使用通常可用作發光層之材料之任一 種低分子化合物,亦可將該等混合使用。 As the material of the light-emitting layer, any of materials which are generally used as the light-emitting layer can be used. A low molecular compound may also be used in combination.
作為低分子系者,可列舉:具有2,2'-聯吡啶-4,4'-二羧酸作為配位子的三配位之銥錯合物、面式三(2-苯基吡啶)銥(Ir(ppy)3)、8-羥基喹啉鋁(Alq3)、三(4-甲基-8-羥基喹啉)鋁(III)(Almq3)、8-羥基喹啉鋅(Znq2)、(1,10-啡啉)-三-(4,4,4-三氟-1-(2-噻吩基)-丁烷-1,3-二酸)銪(III)(Eu(TTA)3(phen))、2,3,7,8,12,13,17,18-八乙基-21H,23H-卟吩鉑(II)之類的各種金屬錯合物;二苯乙烯基苯(DSB)、二胺基二苯乙烯基苯(DADSB)之類的苯系化合物,萘系化合物、菲系化合物、系化合物、苝系化合物、蔻系化合物、蒽系化合物、芘系化合物、吡喃系化合物、吖啶系化合物、茋系化合物、咔唑系化合物、噻吩系化合物、苯并唑系化合物、苯并咪唑系化合物、苯并噻唑系化合物、丁二烯系化合物、萘二甲醯亞胺系化合物、香豆素系化合物、紫環酮系化合物、二唑系化合物、醛連氮系化合物、環戊二烯系化合物、喹吖啶酮系化合物、吡啶系化合物、2,2',7,7'-四苯基-9,9'-螺二茀之類的螺環化合物、金屬或非金屬之酞菁系化合物、進而日本特開2009-155325號公報、日本特願2010-28273號、日本特願2010-230995號及日本特願2011-6458號中所記載之硼化合物材料等,可使用該等之1種或2種以上。 As a low molecular group, a tricoordinate ruthenium complex having a 2,2'-bipyridyl-4,4'-dicarboxylic acid as a ligand, a surface tris(2-phenylpyridine) can be cited.铱(Ir(ppy) 3 ), 8-hydroxyquinoline aluminum (Alq 3 ), tris(4-methyl-8-hydroxyquinoline)aluminum (III) (Almq 3 ), 8-hydroxyquinoline zinc (Znq) 2 ), (1,10-morpholine)-tris-(4,4,4-trifluoro-1-(2-thienyl)-butane-1,3-diacid) ruthenium (III) (Eu ( TTA) 3 (phen)), 2,3,7,8,12,13,17,18-octaethyl-21H, 23H-porphine platinum (II) and other metal complexes; stilbene a benzene compound such as benzene (DSB) or diaminostilbene benzene (DADSB), a naphthalene compound, a phenanthrene compound, a compound, an anthraquinone compound, an anthraquinone compound, an anthraquinone compound, an anthraquinone compound, a pyran compound, an acridine compound, an anthraquinone compound, an oxazole compound, a thiophene compound, a benzo compound An azole compound, a benzimidazole compound, a benzothiazole compound, a butadiene compound, a naphthyl imine compound, a coumarin compound, a purple ketone compound, Diazole compound, aldehyde nitrogen compound, cyclopentadiene compound, quinacridone compound, pyridine compound, 2,2',7,7'-tetraphenyl-9,9'-spiro A spiro compound such as a ruthenium, a metal or a non-metallic phthalocyanine compound, and the Japanese Patent Publication No. 2009-155325, Japanese Patent Application No. 2010-28273, Japanese Patent Application No. 2010-230995, and Japanese Patent Application No. 2011-6458 One or two or more kinds of these may be used as the boron compound material or the like.
上述發光層亦可含有摻雜劑。作為摻雜劑,可使用通常可用 作摻雜劑之任一種化合物。作為可用作摻雜劑之化合物之例子,可列舉:銥化合物;4,4'-雙(9-乙基-3-咔唑乙烯基)-1,1'-聯苯(BCzVBi)等 低分子有機化合物等,可使用該等之1種或2種以上。 The above light-emitting layer may also contain a dopant. As a dopant, it can be used generally available As a compound of any of the dopants. Examples of the compound which can be used as a dopant include an anthracene compound; 4,4'-bis(9-ethyl-3-carbazolevinyl)-1,1'-biphenyl (BCzVBi), etc. One type or two or more types may be used for the low molecular organic compound or the like.
於上述發光層含有摻雜劑之情形時,摻雜劑之含量相對於形 成發光層之材料100質量%,較佳為0.5~20質量%。若為此種含量,則可使發光特性變得更良好。更佳為0.5~10質量%,進而較佳為1~6質量%。 In the case where the above light-emitting layer contains a dopant, the content of the dopant is relative to the shape The material of the light-emitting layer is 100% by mass, preferably 0.5 to 20% by mass. If it is such a content, the luminescent property can be made more favorable. More preferably, it is 0.5 to 10% by mass, and further preferably 1 to 6% by mass.
上述發光層之平均厚度並無特別限定,較佳為10~150nm。 更佳為20~100nm。進而較佳為40~100nm。 The average thickness of the light-emitting layer is not particularly limited, but is preferably 10 to 150 nm. More preferably 20 to 100 nm. Further preferably, it is 40 to 100 nm.
發光層之平均厚度於低分子化合物之情形時可藉由晶體振盪膜厚儀測定,於高分子化合物之情形時可藉由接觸式段差計測定。 The average thickness of the light-emitting layer can be measured by a crystal oscillator film thickness meter in the case of a low molecular compound, and can be measured by a contact type step meter in the case of a polymer compound.
作為上述電洞傳輸層之材料,可使用通常可用作電洞傳輸層 之材料之任一種低分子化合物,亦可將該等混合使用。 As the material of the above hole transport layer, it can be used as a hole transport layer. Any of the low molecular compounds of the materials may be used in combination.
作為低分子化合物,可列舉:芳基環烷烴系化合物、芳基胺系化合物、苯二胺系化合物、咔唑系化合物、茋系化合物、唑系化合物、三苯基甲烷系化合物、吡唑啉系化合物、石油醚(環己二烯)系化合物、三唑系化合物、咪唑系化合物、二唑系化合物、蒽系化合物、茀酮系化合物、苯胺系化合物、矽烷系化合物、吡咯系化合物、茀系化合物、卟啉系化合物、喹吖啶酮系化合物、金屬或非金屬之酞菁系化合物、金屬或非金屬之萘酚菁系化合物、聯苯胺系化合物等,可使用該等之1種或2種以上。 Examples of the low molecular compound include an arylcycloalkane compound, an arylamine compound, a phenylenediamine compound, an oxazole compound, an anthraquinone compound, and An azole compound, a triphenylmethane compound, a pyrazoline compound, a petroleum ether (cyclohexadiene) compound, a triazole compound, an imidazole compound, A bisazole compound, an anthraquinone compound, an anthrone compound, an aniline compound, a decane compound, a pyrrole compound, an anthraquinone compound, a porphyrin compound, a quinacridone compound, a metal or a non-metal phthalocyanine system One type or two or more types of the compound, the metal or the non-metal naphthol phthalocyanine compound, the benzidine compound, and the like can be used.
該等之中,較佳為N,N'-二(1-萘基)-N,N'-二苯基-1,1'-聯苯-4,4'-二胺(α-NPD)、TPTE之類的芳基胺系化合物。 Among these, N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (α-NPD) is preferred. An arylamine compound such as TPTE.
於本發明之第1有機電激發光元件具有電洞傳輸層作為獨 立之層之情形時,電洞傳輸層之平均厚度並無特別限定,較佳為10~150nm。更佳為20~100nm,進而較佳為40~100nm。 The first organic electroluminescent device of the present invention has a hole transport layer as a single In the case of the standing layer, the average thickness of the hole transport layer is not particularly limited, and is preferably 10 to 150 nm. More preferably, it is 20 to 100 nm, and further preferably 40 to 100 nm.
電洞傳輸層之平均厚度可藉由晶體振盪膜厚儀於成膜時測定。 The average thickness of the hole transport layer can be measured by a crystal oscillation film thickness gauge at the time of film formation.
作為上述電子傳輸層之材料,可使用通常可用作電子傳輸層 之材料之任一種低分子化合物,亦可將該等混合使用。 As a material of the above electron transport layer, it can be used as an electron transport layer. Any of the low molecular compounds of the materials may be used in combination.
作為可用作電子傳輸層之材料之低分子化合物之例子,除後述之式(1)所表示之含硼化合物以外,亦可列舉:吡啶衍生物、喹啉衍生物、嘧啶衍生物、吡衍生物、啡啉衍生物、三衍生物、三唑衍生物、唑衍生物、二唑衍生物、咪唑衍生物、芳香環四羧酸酐、以雙[2-(2-羥基苯基)苯并噻唑基]鋅(Zn(BTZ)2)、三(8-羥基喹啉)鋁(Alq3)等為代表之各種金屬錯合物、以矽羅衍生物為代表之有機矽烷衍生物等,可使用該等之1種或2種以上。 Examples of the low molecular compound which can be used as the material of the electron transporting layer include a pyridine derivative, a quinoline derivative, a pyrimidine derivative, and a pyrene, in addition to the boron-containing compound represented by the formula (1) to be described later. Derivative, phenanthroline derivative, three Derivatives, triazole derivatives, Azole derivatives, An oxadiazole derivative, an imidazole derivative, an aromatic cyclic tetracarboxylic anhydride, bis[2-(2-hydroxyphenyl)benzothiazolyl]zinc (Zn(BTZ) 2 ), tris(8-hydroxyquinoline)aluminum One or two or more kinds of these may be used, and various metal complexes represented by (Alq 3 ) and the like, and an organic decane derivative represented by a pyrene derivative.
該等之中,較佳為Alq3之類的金屬錯合物、三-1,3,5-(3'-(吡啶-3"-基)苯基)苯(TmPyPhB)之類的吡啶衍生物。 Among these, a metal complex such as Alq 3 or a pyridine derivative such as tris-1,3,5-(3'-(pyridine-3"-yl)phenyl)benzene (TmPyPhB) is preferred. Things.
於本發明之第1有機電激發光元件具有電子傳輸層作為獨 立之層之情形時,電子傳輸層之平均厚度並無特別限定,較佳為10~150nm。更佳為20~100nm,進而較佳為40~100nm。 The first organic electroluminescent device of the present invention has an electron transport layer as a single In the case of the standing layer, the average thickness of the electron transport layer is not particularly limited, and is preferably 10 to 150 nm. More preferably, it is 20 to 100 nm, and further preferably 40 to 100 nm.
電子傳輸層之平均厚度可藉由晶體振盪膜厚儀於成膜時測定。 The average thickness of the electron transport layer can be measured by a crystal oscillation film thickness gauge at the time of film formation.
本發明之第1有機電激發光元件中,形成第1、第2金屬氧 化物層、第2電極、發光層、電洞傳輸層、電子傳輸層之方法並無特別限制,可使用作為氣相成膜法之電漿CVD、熱CVD、雷射CVD等化學蒸鍍法(CVD),真空蒸鍍、濺鍍、離子電鍍等乾式鍍敷法,噴敷法,以及作為液相成膜法之電解鍍敷、浸漬鍍敷、無電解鍍敷等濕式鍍敷法,溶膠-凝膠法、MOD法、噴霧熱分解法、使用微粒子分散液之刮刀法、旋轉塗佈法、噴墨法、網版印刷法等印刷技術、原子層堆積(ALD)法等,可選擇使用與材料相應之適當之方法。 In the first organic electroluminescence device of the present invention, the first and second metal oxygen are formed The method of the chemical layer, the second electrode, the light-emitting layer, the hole transport layer, and the electron transport layer is not particularly limited, and a chemical vapor deposition method such as plasma CVD, thermal CVD, or laser CVD which is a vapor phase film formation method can be used ( CVD), dry plating such as vacuum deposition, sputtering, ion plating, spray coating, wet plating such as electrolytic plating, immersion plating, electroless plating, or the like as a liquid phase film formation method, sol - Gel method, MOD method, spray pyrolysis method, doctor blade method using fine particle dispersion, spin coating method, inkjet method, screen printing method, printing technology, atomic layer deposition (ALD) method, etc. The appropriate method corresponding to the material.
本發明之第1有機電激發光元件所含之緩衝層為藉由塗佈 含有有機化合物之溶液而形成之層。藉由利用塗佈形成特定厚度之緩衝層,可有效地抑制於緩衝層上成膜之低分子化合物之結晶化。 The buffer layer contained in the first organic electroluminescent device of the present invention is coated by coating A layer formed by a solution containing an organic compound. By forming a buffer layer having a specific thickness by coating, crystallization of a low molecular compound formed on the buffer layer can be effectively suppressed.
上述塗佈含有有機化合物之溶液之方法並無特別限制,可使用旋轉塗 佈法、澆鑄法、微凹版塗佈法、凹版塗佈法、棒式塗佈法、輥式塗佈法、線棒塗佈法、狹縫式塗佈法、浸漬塗佈法、噴塗法、網版印刷法、柔版印刷法、平版印刷法、噴墨印刷法等各種塗佈方法。其中,較佳為旋轉塗佈法。 The method of applying the solution containing the organic compound described above is not particularly limited, and spin coating can be used. Cloth method, casting method, micro gravure coating method, gravure coating method, bar coating method, roll coating method, wire bar coating method, slit coating method, dip coating method, spray coating method, Various coating methods such as screen printing, flexographic printing, lithography, and inkjet printing. Among them, a spin coating method is preferred.
藉由塗佈成膜緩衝層,而存在於第1金屬氧化物層表面之凹凸變得平滑,因此繼而於緩衝層上成膜之低分子化合物之結晶化獲得抑制。 By coating the film formation buffer layer, the unevenness on the surface of the first metal oxide layer is smooth, and thus the crystallization of the low molecular compound formed on the buffer layer is suppressed.
作為用以製備上述含有有機化合物之溶液之溶劑,只要為可 溶解有機化合物者,則並無特別限制,例如可列舉:硝酸、硫酸、氨、過氧化氫、水、二硫化碳、四氯化碳、碳酸乙二酯等無機溶劑,或酮系溶劑、醇系溶劑、醚系溶劑、賽路蘇系溶劑、己烷、戊烷、庚烷、環己烷等脂肪族烴系溶劑,甲苯、二甲苯、苯等芳香族烴系溶劑,芳香族雜環化合物系溶劑、醯胺系溶劑、鹵素化合物系溶劑、酯系溶劑、硫化合物系溶劑、腈系溶劑、有機酸系溶劑等各種有機溶劑,或包含該等之混合溶劑等。該等之中,較佳為THF、甲苯、氯仿。 As a solvent for preparing the above solution containing an organic compound, as long as it is The organic compound is not particularly limited, and examples thereof include inorganic solvents such as nitric acid, sulfuric acid, ammonia, hydrogen peroxide, water, carbon disulfide, carbon tetrachloride, and ethylene carbonate, or ketone solvents and alcohol solvents. , an ether solvent, a serosol solvent, an aliphatic hydrocarbon solvent such as hexane, pentane, heptane or cyclohexane; an aromatic hydrocarbon solvent such as toluene, xylene or benzene; and an aromatic heterocyclic compound solvent; Various organic solvents such as a guanamine-based solvent, a halogen compound-based solvent, an ester-based solvent, a sulfur compound-based solvent, a nitrile-based solvent, and an organic acid-based solvent, or a mixed solvent thereof. Among these, THF, toluene, and chloroform are preferable.
上述含有有機化合物之溶液較佳為溶劑中之有機化合物之 濃度為0.05~10質量%。若為此種濃度,則可抑制塗佈時之塗敷不均或凹凸之產生。溶劑中之有機化合物之濃度更佳為0.1~5質量%,進而較佳為0.1~3質量%。 The above organic compound-containing solution is preferably an organic compound in a solvent The concentration is 0.05 to 10% by mass. If it is such a concentration, uneven coating or unevenness at the time of coating can be suppressed. The concentration of the organic compound in the solvent is more preferably 0.1 to 5% by mass, still more preferably 0.1 to 3% by mass.
上述緩衝層較佳為具有使自形成於基板上之電極起直至發 光層之各層之電子能階之高低順序成為該等層之積層順序的電子能階者。 自形成於基板上之電極(陰極)起直至發光層之各層之電子能階之高低順序與積層順序相同,電子能階之高度自電極(陰極)向發光層階段性地變高,藉此自電極(陰極)起直至發光層之電子遷移即便於上坡過程中亦可相對較順利地進行。 Preferably, the buffer layer has an electrode formed on the substrate until it is emitted The order of the electron energy levels of the layers of the optical layer becomes the electron energy level of the stacking order of the layers. The height of the electron energy level from the electrode (cathode) formed on the substrate to the layers of the light-emitting layer is the same as the order of the layer, and the height of the electron energy level is gradually increased from the electrode (cathode) to the light-emitting layer. The electron migration from the electrode (cathode) up to the luminescent layer can be performed relatively smoothly even during the ascending process.
上述緩衝層較佳為平均厚度為5~50nm。藉由使平均厚度 為此種範圍,可充分地發揮出抑制包含發光層之低分子化合物層之結晶化之效果。若緩衝層之平均厚度薄於5nm,則有無法使存在於第1金屬氧化物表面之凹凸充分平滑化,洩漏電流變大而無法充分地發揮出本發明之效果之虞。又,若緩衝層之平均厚度厚於50nm,則驅動電壓上升而於實用上欠佳。又,於使用後述之本發明中之較佳結構之化合物作為有機化合物之情形時,緩衝層亦可充分發揮出作為電子傳輸層之功能。上述緩衝層之平均厚度更佳為10~30nm。 The buffer layer preferably has an average thickness of 5 to 50 nm. By making the average thickness For this range, the effect of suppressing the crystallization of the low molecular compound layer containing the light-emitting layer can be sufficiently exhibited. When the average thickness of the buffer layer is less than 5 nm, the unevenness of the surface of the first metal oxide is not sufficiently smoothed, and the leakage current is increased, so that the effect of the present invention cannot be sufficiently exhibited. Further, when the average thickness of the buffer layer is thicker than 50 nm, the driving voltage rises and it is practically unsatisfactory. Further, when a compound having a preferred structure in the present invention described later is used as the organic compound, the buffer layer can sufficiently exhibit the function as an electron transport layer. The average thickness of the above buffer layer is preferably 10 to 30 nm.
緩衝層之平均厚度可藉由觸針式段差計、分光橢圓偏光儀測定。 The average thickness of the buffer layer can be measured by a stylus type step meter and a spectroscopic ellipsometer.
且說,上述日本特開2012-4492號公報(專利文獻5)中揭 示有具有陽極、陰極、陽極與陰極所夾持之1層或複數層之有機化合物層、及位於陽極與有機化合物層之間或陰極與有機化合物層之間的至少1種以上之金屬氧化物薄膜,且於其等各層間具有1層或複數層之對主要載子成為能量障壁,對相反載子不成為能量障壁之自組化單分子膜的有機薄膜電激發光元件。該專利文獻中關於有機無機混合型電激發光元件,對藉由使具有特定能階之自組化單分子膜於氧化物基板上(藉由包括塗佈之成膜方法)成膜,使與主要載子相反之載子藉由穿隧而進行載子注入的元件構成進行記載。進而記載有利用穿隧之載子注入於該自組化單分子膜為2nm以下之薄膜之情形時較佳地發揮功能(根據專利文獻5之記載,推測有機化合物層之平均厚度為2nm以下)。另一方面,如後述實施例所述,為了對本發明所欲解決之課題獲得充分之效果,而必須使有機化合物層之平均厚度為5nm以上。 Further, it is disclosed in Japanese Laid-Open Patent Publication No. 2012-4492 (Patent Document 5). An organic compound layer having one or a plurality of layers sandwiched between an anode, a cathode, an anode and a cathode, and at least one metal oxide between the anode and the organic compound layer or between the cathode and the organic compound layer A film, and an organic thin film electroluminescent device having a single layer or a plurality of layers between the layers and the like, and the main carrier is an energy barrier, and the opposite carrier does not become an energy barrier of the self-assembled monomolecular film. This patent document relates to an organic-inorganic hybrid electroluminescent device which is formed by forming a self-assembled monomolecular film having a specific energy level on an oxide substrate (by a film forming method including coating). The element configuration in which the carrier having the opposite main carrier is subjected to carrier injection by tunneling is described. Further, it is described that when a film having a tunneling carrier is injected into a film having a self-assembled monomolecular film of 2 nm or less, it is preferably functional (the average thickness of the organic compound layer is estimated to be 2 nm or less according to Patent Document 5) . On the other hand, as described in the examples below, in order to obtain a sufficient effect on the problem to be solved by the present invention, it is necessary to make the organic compound layer have an average thickness of 5 nm or more.
如此,本發明之應解決之課題、解決之手段與專利文獻5中所揭示之發明本質上不同,應明確地加以區分。 As described above, the problem to be solved and the means for solving the problem of the present invention are substantially different from the invention disclosed in Patent Document 5, and should be clearly distinguished.
本發明之第1有機電激發光元件亦可為於基板上積層有構 成有機電激發光元件之各層者。於為在基板上積層有各層者之情形時,較 佳為於形成於基板上之第1電極上形成有各層者。於此情形時,本發明之第1有機電激發光元件可為於與具有基板之側相反之側提取光的頂部發光型者,亦可為於具有基板之側提取光的底部發光(bottom emission)型者。 The first organic electroluminescent device of the present invention may also be laminated on a substrate. The layers of the organic electroluminescent element are formed. When it is a case where layers are stacked on a substrate, It is preferable that each layer is formed on the first electrode formed on the substrate. In this case, the first organic electroluminescent device of the present invention may be a top emission type that extracts light on the side opposite to the side having the substrate, or may be a bottom emission that extracts light on the side having the substrate. ) type.
作為上述基板之材料,可列舉:聚對苯二甲酸乙二酯、聚萘 二甲酸乙二酯、聚丙烯、環烯烴聚合物、聚醯胺、聚醚碸、聚甲基丙烯酸甲酯、聚碳酸酯、聚芳酯之類的樹脂材料,或石英玻璃、鈉玻璃之類的玻璃材料等,可使用該等之1種或2種以上。 Examples of the material of the substrate include polyethylene terephthalate and polynaphthalene. a resin material such as ethylene diformate, polypropylene, cycloolefin polymer, polyamine, polyether oxime, polymethyl methacrylate, polycarbonate, polyarylate, or quartz glass, soda glass or the like One or two or more of these may be used.
又,於頂部發光型之情形時,亦可使用不透明基板,例如亦可使用由氧化鋁之類的陶瓷材料構成的基板、於不鏽鋼之類的金屬基板之表面形成有氧化膜(絕緣膜)者、由樹脂材料構成之基板等。 Further, in the case of the top emission type, an opaque substrate may be used. For example, a substrate made of a ceramic material such as alumina or an oxide film (insulating film) formed on the surface of a metal substrate such as stainless steel may be used. A substrate made of a resin material or the like.
上述基板之平均厚度較佳為0.1~30mm。更佳為0.1~10 mm。 The average thickness of the substrate is preferably 0.1 to 30 mm. More preferably 0.1~10 Mm.
基板之平均厚度可藉由數位萬用表、游標卡尺測定。 The average thickness of the substrate can be measured by a digital multimeter and a vernier caliper.
本發明之第1有機電激發光元件具有塗佈含有有機化合物 之溶液而形成緩衝層,並於其上積層有發光層等低分子化合物層之構成,藉此可解決低分子化合物之結晶化之有機無機混合型有機電激發光元件所特有之課題。如下本發明之第1較佳形態之有機電激發光元件之製造方法亦又為本發明之一,該製造方法係上述本發明之第1較佳形態之有機無機混合型有機電激發光元件之製造方法、即具有積層有複數層之構造之有機電激發光元件之製造方法,其特徵在於:該製造方法包括下述步驟:以使有機電激發光元件成為於第1電極與第2電極之間依序具有第1金屬氧化物層、緩衝層、積層於該緩衝層上之包含發光層之低分子化合物層、及第2金屬氧化物層者之方式,積層構成有機電激發光元件之各層,該積層步驟包括塗佈含有有機化合物之溶液而形成平均厚度為3nm以上之緩衝層的步驟。 The first organic electroluminescent device of the present invention has a coating containing an organic compound The solution is formed into a buffer layer, and a low molecular compound layer such as a light-emitting layer is laminated thereon, whereby the problem of the organic-inorganic hybrid organic electroluminescent device in which the low molecular compound is crystallized can be solved. The method for producing an organic electroluminescence device according to the first preferred embodiment of the present invention is also one of the inventions, and the method of production is the organic-inorganic hybrid organic electroluminescent device according to the first preferred embodiment of the present invention. A manufacturing method, that is, a method of manufacturing an organic electroluminescence device having a structure in which a plurality of layers are laminated, characterized in that the manufacturing method includes the step of causing an organic electroluminescence device to be a first electrode and a second electrode The first metal oxide layer, the buffer layer, the low molecular compound layer including the light emitting layer laminated on the buffer layer, and the second metal oxide layer are sequentially laminated to form each layer of the organic electroluminescent device. The step of laminating includes the step of applying a solution containing an organic compound to form a buffer layer having an average thickness of 3 nm or more.
於本發明之有機電激發光元件之製造方法中,塗佈含有有機化合物之溶液而形成緩衝層的步驟較佳為形成平均厚度為5~50nm之緩衝層的步驟。 In the method for producing an organic electroluminescent device of the present invention, the step of applying a solution containing an organic compound to form a buffer layer is preferably a step of forming a buffer layer having an average thickness of 5 to 50 nm.
上述本發明之第1較佳形態之有機電激發光元件之製造方 法只要包括上述步驟,則亦可包括其他步驟,亦可包括形成第1、第2金屬氧化物層、緩衝層、包含發光層之低分子化合物層以外之層的步驟。又,形成有機電激發光元件之各層之材料、形成方法、有機化合物、用以製備含有有機化合物之溶液之溶劑、及各層之厚度與本發明之第1有機電激發光元件相同,較佳者亦相同。 The manufacturer of the organic electroluminescent device of the first preferred embodiment of the present invention The method may include other steps as long as the above steps are included, and may include a step of forming a layer other than the first and second metal oxide layers, the buffer layer, and the low molecular compound layer including the light emitting layer. Further, a material for forming each layer of the organic electroluminescence element, a method for forming the organic compound, a solvent for preparing a solution containing the organic compound, and a thickness of each layer are the same as those of the first organic electroluminescence device of the present invention, preferably The same is true.
本發明之第1有機電激發光元件中,形成緩衝層之有機化合 物只要為可藉由塗佈而形成有機化合物之層者,則並無特別限制,作為有機化合物之例子,可列舉:反型聚乙炔、順型聚乙炔、聚(二苯乙炔)(PDPA)、聚(烷基/苯乙炔)(PAPA)之類的聚乙炔系化合物;聚對苯乙炔系化合物;聚噻吩系化合物;聚茀系化合物;聚對苯系化合物;聚咔唑系化合物;聚矽烷系化合物、聚乙亞胺(PEI)、或下述式(1)所表示之含硼化合物、使含有下述式(2)所表示之含硼化合物之單體成分聚合而獲得的含硼聚合物等含硼化合物,或3TPYMB:三(2,4,6-三甲基-3-(吡啶-3-基)苯基)硼烷等含硼之電子傳輸材料。該等可使用1種,亦可使用2種以上。 In the first organic electroluminescent device of the present invention, an organic compound of a buffer layer is formed The material is not particularly limited as long as it can form a layer of an organic compound by coating. Examples of the organic compound include trans-polyacetylene, cis-polyacetylene, and poly(diphenylacetylene) (PDPA). a polyacetylene compound such as poly(alkyl/phenylacetylene) (PAPA); a polyparaphenylene acetylene compound; a polythiophene compound; a polyfluorene compound; a polyparaphenylene compound; a polycarbazole compound; a boron-containing compound, a polyethyleneimine (PEI), or a boron-containing compound represented by the following formula (1), and a boron-containing compound obtained by polymerizing a monomer component containing a boron-containing compound represented by the following formula (2) A boron-containing compound such as a polymer, or a boron-containing electron transporting material such as 3TPYMB: tris(2,4,6-trimethyl-3-(pyridin-3-yl)phenyl)borane. These may be used alone or in combination of two or more.
本發明之第1有機電激發光元件中,形成緩衝層之有機化合 物較佳為具有硼原子之有機化合物。更佳為具有硼原子之有機化合物為下述式(1)所表示之結構之化合物,或者為使含有下述式(2)所表示之含硼化合物之單體成分聚合而獲得的含硼聚合物。 In the first organic electroluminescent device of the present invention, an organic compound of a buffer layer is formed The substance is preferably an organic compound having a boron atom. More preferably, the organic compound having a boron atom is a compound represented by the following formula (1), or a boron-containing polymerization obtained by polymerizing a monomer component containing a boron-containing compound represented by the following formula (2). Things.
即,本發明之第1有機電激發光元件中,形成緩衝層之具有硼原子之有機化合物較佳為下述式(1)所表示之含硼化合物,或者為使含有下述式
(2)所表示之含硼化合物之單體成分聚合而獲得的含硼聚合物:
(式中,虛線之圓弧表示與實線所表示之骨架部分一起形成
環結構;實線所表示之骨架部分中之虛線部分表示以虛線連結之1對原子亦可以雙鍵連結;自氮原子指向硼原子之箭頭表示氮原子對硼原子進行配位;Q1及Q2相同或不同,為實線所表示之骨架部分中之連結基,至少一部分與虛線之圓弧部分一起形成環結構,亦可具有取代基;X1、X2、X3及X4相同或不同,表示氫原子、或成為環結構之取代基的1價取代基,亦可於形成虛線之圓弧部分之環結構上鍵結複數個;n1表示2~10之整數;Y1為直接鍵或n1價之連結基,表示與所存在之n1個Y1以外之結構部分分別獨立地於形成虛線之圓弧部分之環結構、Q1、Q2、X1、X2、X3、X4中之任一部位鍵結)
(式中,虛線之圓弧表示與連結硼原子與氮原子之骨架部分 之一部分一起形成環結構;連結硼原子與氮原子之骨架部分中之虛線部分 表示至少1對原子以雙鍵連結,該雙鍵亦可與環結構共軛;自氮原子指向硼原子之箭頭表示氮原子對硼原子進行配位;X5及X6相同或不同,表示氫原子或成為環結構之取代基的1價取代基,亦可於形成虛線之圓弧部分之環結構上鍵結複數個;R1及R2相同或不同,表示氫原子或1價取代基;X5、X6、R1及R2中之至少一者為具有反應性基之取代基)。 (wherein, the circular arc of the dotted line indicates a ring structure together with a portion of the skeleton portion linking the boron atom and the nitrogen atom; and the broken line portion in the skeleton portion connecting the boron atom and the nitrogen atom indicates that at least one pair of atoms are linked by a double bond, The double bond may also be conjugated to the ring structure; the arrow from the nitrogen atom to the boron atom indicates that the nitrogen atom coordinates the boron atom; and X 5 and X 6 are the same or different, indicating a hydrogen atom or a valence of a substituent which becomes a ring structure. The substituent may also be bonded to a plurality of ring structures forming a circular arc portion of a broken line; R 1 and R 2 are the same or different and represent a hydrogen atom or a monovalent substituent; X 5 , X 6 , R 1 and R 2 At least one of them is a substituent having a reactive group).
已知有機無機混合型電激發光元件中,自陽極之電洞注入較 自陰極之電子注入更高效地進行,發光位置存在於陰極側氧化物(相當於本發明中之第1金屬氧化物)界面附近。為了避免自接觸於第1金屬氧化物層之緩衝層之發光,作為形成緩衝層之有機化合物,較佳為選擇具有深於發光層中所含之發光性化合物之HOMO能階的HOMO能階之化合物。進而,為了避免發光層中所生成之激子之能量轉移至緩衝層之化合物而發光,更佳為選擇具有廣於發光層中所含之發光性化合物之HOMO-LUMO能隙的HOMO-LUMO能隙之化合物。上述式(1)所表示之含硼化合物或使包含式(2)所表示之含硼化合物之單體成分聚合而獲得的含硼聚合物兼具非常深之HOMO與較廣之HOMO-LUMO能隙,為可塗佈之化合物,因此可對各種發光層有效地發揮功能。 It is known that in the organic-inorganic hybrid electroluminescent device, the hole injection from the anode is more The electron injection from the cathode proceeds more efficiently, and the light-emitting position exists in the vicinity of the interface of the cathode-side oxide (corresponding to the first metal oxide in the present invention). In order to avoid luminescence from the buffer layer of the first metal oxide layer, as the organic compound forming the buffer layer, it is preferred to select a HOMO level having a HOMO level deeper than the luminescent compound contained in the luminescent layer. Compound. Further, in order to prevent the energy of the excitons generated in the light-emitting layer from being transferred to the compound of the buffer layer to emit light, it is more preferable to select the HOMO-LUMO energy having a HOMO-LUMO energy gap which is wider than the light-emitting compound contained in the light-emitting layer. The compound of the gap. The boron-containing compound represented by the above formula (1) or the boron-containing polymer obtained by polymerizing the monomer component containing the boron-containing compound represented by the formula (2) has both a very deep HOMO and a wider HOMO-LUMO energy. The gap is a coatable compound and thus can effectively function for various light-emitting layers.
又,若具有硼原子之有機化合物為具有此種結構之化合物,則由有機化合物形成之緩衝層成為作為電子傳輸層之功能亦優異者,無須除緩衝層外另外設置電子傳輸層。 Further, when the organic compound having a boron atom is a compound having such a structure, the buffer layer formed of the organic compound is excellent in function as an electron transport layer, and it is not necessary to provide an electron transport layer in addition to the buffer layer.
以下,首先對上述式(1)所表示之含硼化合物進行記述,其次對使包含上述式(2)所表示之含硼化合物之單體成分聚合而獲得的含硼聚合物進行記述。 In the following, first, the boron-containing compound represented by the above formula (1) will be described, and then the boron-containing polymer obtained by polymerizing the monomer component containing the boron-containing compound represented by the above formula (2) will be described.
上述式(1)所表示之含硼化合物具有(i)為熱穩定性化合 物,(i)HOMO、LUMO之能階較低,(iii)可製作良好之塗佈膜等各種特性,可較佳地用作本發明之第1有機電激發光元件之材料。 The boron-containing compound represented by the above formula (1) has (i) a thermal stability compound The material (i) has a low energy level of HOMO and LUMO, and (iii) can produce various properties such as a good coating film, and can be preferably used as a material of the first organic electroluminescent device of the present invention.
上述式(1)中,虛線之圓弧表示與實線所表示之骨架部分、 即連結硼原子、Q1、及氮原子之骨架部分之一部分或連結硼原子與Q2之骨架部分之一部分一起形成環結構。其表示上述式(1)所表示之化合物於結構中具有至少4個環結構,且上述式(1)中含有連結硼原子、Q1、及氮原子之骨架部分及連結硼原子與Q2之骨架部分作為該環結構之一部分。再者,X1所鍵結之環結構為其環結構骨架不含碳原子以外之原子而由碳原子構成者。 In the above formula (1), the arc of the broken line indicates a part of the skeleton portion indicated by the solid line, that is, a part of the skeleton portion to which the boron atom, Q 1 , and the nitrogen atom is bonded, or a part of the skeleton portion to which the boron atom and the Q 2 are bonded. Form a ring structure. It is shown that the compound represented by the above formula (1) has at least four ring structures in the structure, and the above formula (1) contains a skeleton moiety linking a boron atom, Q 1 , and a nitrogen atom, and a boron atom and a Q 2 bond. The skeleton portion serves as a part of the ring structure. Further, the ring structure to which X 1 is bonded is a structure in which the ring structure skeleton does not contain an atom other than a carbon atom and is composed of carbon atoms.
上述式(1)中,實線所表示之骨架部分、即連結硼原子、Q1、及氮原子之骨架部分及連結硼原子與Q2之骨架部分中的虛線部分表示於各自之骨架部分中以虛線連結之1對原子亦可以雙鍵連結。 In the above formula (1), the skeleton portion indicated by the solid line, that is, the skeleton portion linking the boron atom, Q 1 , and the nitrogen atom, and the dotted line portion in the skeleton portion connecting the boron atom and Q 2 are represented in the respective skeleton portions. A pair of atoms linked by a broken line may also be linked by a double bond.
上述式(1)中,自氮原子指向硼原子之箭頭表示氮原子對 硼原子進行配位。此處,所謂配位,意指氮原子對硼原子以與配位子相同之方式發揮作用而產生化學影響,可形成配位鍵(共價鍵),亦可不形成配位鍵。較佳為形成配位鍵。 In the above formula (1), an arrow pointing from a nitrogen atom to a boron atom indicates a pair of nitrogen atoms The boron atom is coordinated. Here, the term "coordination" means that a nitrogen atom acts on the boron atom in the same manner as a ligand to cause a chemical influence, and a coordinate bond (covalent bond) may be formed or a coordinate bond may not be formed. Preferably, a coordinate bond is formed.
上述式(1)中,Q1及Q2相同或不同,為實線所表示之骨架 部分中之連結基,至少一部分與虛線之圓弧部分一起形成環結構,且亦可具有取代基。其表示Q1及Q2分別作為該環結構之一部分而併入。 In the above formula (1), Q 1 and Q 2 are the same or different, and are a linking group in a skeleton portion represented by a solid line, and at least a part thereof forms a ring structure together with a circular arc portion of a broken line, and may have a substituent. It is meant that Q 1 and Q 2 are incorporated as part of the ring structure, respectively.
上述式(1)中,X1、X2、X3及X4相同或不同,表示氫原子、或成為環結構之取代基的1價取代基,亦可於形成虛線之圓弧部分之環結構上鍵結複數個。即,於X1、X2、X3及X4為氫原子之情形時,表示上述式(1)所表示之化合物之結構中,具有X1、X2、X3及X4之4個環結構不具有取代基,於X1、X2、X3及X4之任一者或全部為1價取代基之情形時,該4個環結構之任一者或全部具有取代基。於此情形時,1個環結構所具有之取代基之個數可為1個,亦可為2個以上。 In the above formula (1), X 1 , X 2 , X 3 and X 4 are the same or different and each represents a hydrogen atom or a monovalent substituent which is a substituent of the ring structure, and may also form a ring of a circular arc portion of a broken line. There are a plurality of structural bonds. In other words, when X 1 , X 2 , X 3 and X 4 are a hydrogen atom, it means that the structure of the compound represented by the above formula (1) has 4 of X 1 , X 2 , X 3 and X 4 . The ring structure does not have a substituent, and when any one or all of X 1 , X 2 , X 3 and X 4 is a monovalent substituent, any one or all of the four ring structures have a substituent. In this case, the number of substituents in one ring structure may be one or two or more.
再者,本說明書中,所謂取代基,意指包括含碳之有機基、及鹵素原 子、羥基等不含碳之基的基。 In addition, in the present specification, the term "substituent" means including a carbon-containing organic group, and a halogen atom. A group having no carbon group such as a hydroxyl group or a hydroxyl group.
上述式(1)中,n1表示2~10之整數,Y1為直接鍵或n1價 之連結基。即,上述式(1)所表示之化合物中,Y1為直接鍵,所存在之2個Y1以外之結構部分彼此分別獨立地於形成虛線之圓弧部分之環結構、Q1、Q2、X1、X2、X3、X4中之任一部位鍵結,或者Y1為n1價之連結基,上述式(1)中之Y1以外之結構部分存在複數個,其等經由作為連結基之Y1而鍵結。 In the above formula (1), n 1 represents an integer of 2 to 10, and Y 1 is a direct bond or a n 1 valent linkage. That is, in the compound represented by the above formula (1), Y 1 is a direct bond, and the two structural portions other than Y 1 are independently formed independently of the ring structure forming the circular arc portion of the broken line, Q 1 , Q 2 Any one of X 1 , X 2 , X 3 , and X 4 is bonded, or Y 1 is a n 1 valent linking group, and a plurality of structural portions other than Y 1 in the above formula (1) are present, etc. Bonded via Y 1 as a linking group.
上述式(1)中,於Y1為直接鍵之情形時,上述式(1)表 示所存在之2個Y1以外之結構部分之一者的形成虛線之圓弧部分之環結構、Q1、Q2、X1、X2、X3、X4中之任一部位與另一者的形成虛線之圓弧部分之環結構、Q1、Q2、X1、X2、X3、X4中之任一部位直接鍵結。該鍵結位置並無特別限制,但較佳為Y1以外之結構部分之一者的鍵結有X1之環或鍵結有X2之環與另一者的鍵結有X1之環或鍵結有X2之環直接鍵結。更佳為Y1以外之結構部分之一者的鍵結有X2之環與另一者的鍵結有X2之環直接鍵結。 In the above formula (1), when Y 1 is a direct bond, the above formula (1) represents a ring structure of a circular arc portion forming a dotted line of one of the two structural portions other than Y 1 present, Q 1 a ring structure of a circular arc portion forming a dotted line with any one of Q 2 , X 1 , X 2 , X 3 , and X 4 , Q 1 , Q 2 , X 1 , X 2 , X 3 , Any part of X 4 is directly bonded. The bonding position is not particularly limited, but preferably one of the structural portions other than Y 1 has a ring of X 1 or a ring with X 2 bonded to the other with a ring of X 1 Or the key is directly bonded to the ring of X 2 . More preferably, one of the structural parts other than Y 1 has a bond of X 2 and a bond of the other with a direct bond of X 2 .
於此情形時,所存在之2個Y1以外之結構部分之結構可相同,亦可不同。 In this case, the structures of the structural parts other than the two Y 1 existing may be the same or different.
上述式(1)中,於Y1為n1價之連結基,上述式(1)中之 Y1以外之結構部分存在複數個,其等經由作為連結基之Y1而鍵結之情形時,如此般所存在之複數個上述式(1)中之Y1以外之結構部分經由作為連結基之Y1而鍵結之結構與Y1以外之結構部分直接鍵結之結構相比,變得更耐氧化,製膜性亦提高,就此而言更佳。 In the above formula (1), when Y 1 is a linking group of n 1 valence, a plurality of structural portions other than Y 1 in the above formula (1) are plural, and when they are bonded via Y 1 as a linking group, The structure in which a plurality of structural portions other than Y 1 in the above formula (1) are bonded via Y 1 as a linking group is directly bonded to a structure in which a structure other than Y 1 is directly bonded. It is more resistant to oxidation and has improved film formability, which is better in this respect.
再者,於Y1為n1價之連結基之情形時,Y1與所存在之n1個Y1以外之結構部分分別獨立地於形成虛線之圓弧部分之環結構、Q1、Q2、X1、X2、X3、X4中之任一部位鍵結,其表示只要Y1以外之結構部分於形成虛線之圓弧部分之環結構、Q1、Q2、X1、X2、X3、X4中之任一部位與Y1鍵結即可,關於 Y1以外之結構部分與Y1之鍵結部位,所存在之n1個Y1以外之結構部分分別獨立,可全部為同一部位,可一部分為同一部位,亦可全部為不同部位。 該鍵結位置並無特別限制,較佳為所存在之n1個Y1以外之結構部分之全部於X1所鍵結之環或X2所鍵結之環上與Y1鍵結。更佳為所存在之n1個Y1以外之結構部分之全部於X2所鍵結之環上與Y1鍵結。 Furthermore, in the case where Y 1 is a n 1 valent linking group, Y 1 and the existing n 1 Y 1 structural portions are independently independent of the ring structure forming the circular arc portion of the dotted line, Q 1 , Q 2. Any one of X 1 , X 2 , X 3 , and X 4 is bonded, and represents a ring structure other than Y 1 in a ring structure forming a circular arc portion of a broken line, Q 1 , Q 2 , X 1 , X 2, X 3, X 4 in any of a portion bonded to the Y 1, Y 1 on the structure of the portion other than the bonding portion of Y 1, the n moieties are present other than the Y-11 are each independently All may be the same part, and some may be the same part, or all of them may be different parts. The bonding position is not particularly limited, and it is preferred that all of the structural portions other than n 1 Y 1 present are bonded to Y 1 on the ring to which X 1 is bonded or the ring to which X 2 is bonded. More preferably, all of the structural moieties other than n 1 Y 1 are bonded to Y 1 on the ring to which X 2 is bonded.
又,所存在之n1個Y1以外之結構部分之結構可全部相同,可一部分相同,亦可全部不同。 Further, the structures of the structural portions other than the n 1 Y 1 may be all the same, and may be partially the same or all different.
於上述式(1)中之Y1為n1價之連結基之情形時,作為該連 結基,例如可列舉:可具有取代基之鏈狀、支鏈狀或環狀之烴基,可具有取代基之含有雜原子之基,可具有取代基之芳基,可具有取代基之雜環基。 該等之中,較佳為可具有取代基之芳基、可具有取代基之雜環基等具有芳香環之基。即,上述式(1)中之Y1為具有芳香環之基亦又為本發明之較佳實施形態之一。 When in (1) in the case where Y in the above Formula 1 is a divalent linking group of n 1, the Examples of the linking group, examples thereof include: chain may have a substituent group, the hydrocarbon group of the branched-chain or cyclic, may have a substituent The hetero atom-containing group, the aryl group which may have a substituent, and the heterocyclic group which may have a substituent. Among these, a group having an aromatic ring such as an aryl group which may have a substituent and a heterocyclic group which may have a substituent is preferable. That is, Y 1 in the above formula (1) is a group having an aromatic ring and is also one of preferred embodiments of the present invention.
進而,Y1亦可為具有組合複數個上述連結基而成之結構之連結基。 Further, Y 1 may be a linking group having a structure in which a plurality of the above-mentioned linking groups are combined.
作為上述鏈狀、支鏈狀或環狀之烴基,較佳為下述式(3-1)~(3-8)之任一者所表示之基。該等之中,更佳為下述式(3-1)、(3-7)。 The chain, branched or cyclic hydrocarbon group is preferably a group represented by any one of the following formulae (3-1) to (3-8). Among these, the following formulas (3-1) and (3-7) are more preferable.
作為上述含有雜原子之基,較佳為下述式(3-9)~(3-13)之任一者所表示之基。該等之中,更佳為下述式(3-12)、(3-13)。 The group containing a hetero atom is preferably a group represented by any one of the following formulas (3-9) to (3-13). Among these, the following formulas (3-12) and (3-13) are more preferable.
作為上述芳基,較佳為下述式(3-14)~(3-20)之任一者所表示之基。該等之中,更佳為下述式(3-14)、(3-20)。 The aryl group is preferably a group represented by any one of the following formulas (3-14) to (3-20). Among these, the following formulas (3-14) and (3-20) are more preferable.
作為上述雜環基,較佳為下述式(3-21)~(3-27)之任一者所表示之基。該等之中,更佳為下述式(3-23)、(3-24)。 The heterocyclic group is preferably a group represented by any one of the following formulas (3-21) to (3-27). Among these, the following formulas (3-23) and (3-24) are more preferable.
作為上述鏈狀、支鏈狀或環狀之烴基,含有雜原子之基,芳 基,雜環基所具有的取代基,可列舉:鹵素原子;鹵烷基;碳數1~20之直鏈狀或支鏈狀烷基;碳數5~7之環狀烷基;碳數1~20之直鏈狀或支鏈 狀烷氧基;硝基;氰基;具有碳數1~10之烷基之二烷基胺基;二苯基胺基、咔唑基等二芳基胺基;醯基;碳數2~30之烯基;碳數2~30之炔基;可經鹵素原子或烷基、烷氧基、烯基、炔基等取代之芳基;可經鹵素原子或烷基、烷氧基、烯基、炔基取代之雜環基;N,N-二烷基胺甲醯基;二氧雜硼雜環戊基(dioxaborolanyl)、錫烷基、矽基、酯基、甲醯基、硫醚基、環氧基、異氰酸酯基等。再者,該等基亦可經鹵素原子或雜原子、烷基、芳香環等取代。 As the above-mentioned chain, branched or cyclic hydrocarbon group, a group containing a hetero atom, Examples of the substituent of the heterocyclic group include a halogen atom; a haloalkyl group; a linear or branched alkyl group having 1 to 20 carbon atoms; a cyclic alkyl group having 5 to 7 carbon atoms; Straight chain or branch of 1~20 Alkoxy; nitro; cyano; dialkylamino group having an alkyl group having 1 to 10 carbon atoms; diarylamino group such as diphenylamino group or carbazolyl; fluorenyl group; carbon number 2~ An alkenyl group of 30; an alkynyl group having 2 to 30 carbon atoms; an aryl group which may be substituted by a halogen atom or an alkyl group, an alkoxy group, an alkenyl group, an alkynyl group or the like; may be a halogen atom or an alkyl group, an alkoxy group or an alkene group; Alkynyl-substituted heterocyclic group; N,N-dialkylaminecarbamyl; dioxaborolanyl, stannyl, fluorenyl, ester, mercapto, thioether Base, epoxy group, isocyanate group, and the like. Further, the groups may be substituted by a halogen atom or a hetero atom, an alkyl group, an aromatic ring or the like.
該等之中,作為Y1中之鏈狀、支鏈狀或環狀之烴基,含有雜原子之基,芳基,雜環基所具有的取代基,較佳為鹵素原子、碳數1~20之直鏈狀或支鏈狀烷基、碳數1~20之直鏈狀或支鏈狀烷氧基、芳基、雜環基、二芳基胺基。更佳為烷基、芳基、烷氧基、二芳基胺基。 Among these, the chain group, the branched chain or the cyclic hydrocarbon group in Y 1 contains a substituent of a hetero atom, a aryl group or a heterocyclic group, and preferably has a halogen atom and a carbon number of 1 to a linear or branched alkyl group of 20, a linear or branched alkoxy group having 1 to 20 carbon atoms, an aryl group, a heterocyclic group or a diarylamino group. More preferably, it is an alkyl group, an aryl group, an alkoxy group, or a diarylamine group.
於上述Y1中之鏈狀、支鏈狀或環狀之烴基,含有雜原子之基,芳基,雜環基具有取代基之情形時,取代基鍵結之位置或個數並無特別限制。 In the case where the chain, branched or cyclic hydrocarbon group in the above Y 1 contains a hetero atom group, an aryl group or a heterocyclic group has a substituent, the position or number of the substituent bond is not particularly limited. .
上述式(1)中之n1表示2~10之整數,較佳為2~6。更佳 為2~5之整數,進而較佳為2~4之整數,就對溶劑之溶解性之觀點而言,尤佳為2或3。最佳為2。即,上述式(1)所表示之含硼化合物最佳為二聚物。 n 1 in the above formula (1) represents an integer of 2 to 10, preferably 2 to 6. More preferably, it is an integer of 2 to 5, and further preferably an integer of 2 to 4, and particularly preferably 2 or 3 from the viewpoint of solubility of the solvent. The best is 2. That is, the boron-containing compound represented by the above formula (1) is preferably a dimer.
作為上述式(1)中之Q1及Q2,可列舉下述式(4-1)~(4
-8)所表示之結構:
再者,上述式(4-2)為碳原子上鍵結2個氫原子,進而鍵 結3個原子之結構,該氫原子以外之鍵結於碳原子上之3個原子均為氫原子以外之原子。上述式(4-1)~(4-8)之中,較佳為(4-1)、(4-7)、(4-8)之任一者。更佳為(4-1)。即,Q1及Q2相同或不同,表示碳數1之連結基的形態亦又為本發明之較佳實施形態之一。 Further, the above formula (4-2) is a structure in which two hydrogen atoms are bonded to a carbon atom, and three atoms are bonded, and three atoms other than the hydrogen atom bonded to the carbon atom are hydrogen atoms. The atom. Among the above formulae (4-1) to (4-8), any of (4-1), (4-7), and (4-8) is preferable. More preferably (4-1). That is, Q 1 and Q 2 are the same or different, and the form of the linking group having a carbon number of 1 is also one of the preferred embodiments of the present invention.
上述式(1)中,由虛線之圓弧與實線所表示之骨架部分之 一部分所形成的環結構只要X1所鍵結之環結構之骨架由碳原子構成,只要為環狀結構,則並無特別限制。 In the above formula (1), the ring structure formed by a portion of the skeleton portion indicated by the arc of the broken line and the solid line is composed of carbon atoms as long as the skeleton of the ring structure to which X 1 is bonded is a ring structure. There are no special restrictions.
上述式(1)中,於Y1為直接鍵且n1為2之情形時,作為X1所鍵結之環,例如可列舉:苯環、萘環、蒽環、稠四苯環、稠五苯環、聯三伸苯環、芘環、茀環、茚環、噻吩環、呋喃環、吡咯環、苯并噻吩環、苯并呋喃環、吲哚環、二苯并噻吩環、二苯并呋喃環、咔唑環、噻唑環、苯并噻唑環、唑環、苯并唑環、咪唑環、吡唑環、苯并咪唑環、吡啶環、嘧啶環、吡環、嗒環、喹啉環、異喹啉環、喹啉環、苯并噻二唑環。 In the above formula (1), when Y 1 is a direct bond and n 1 is 2, examples of the ring to which X 1 is bonded include a benzene ring, a naphthalene ring, an anthracene ring, a thick tetraphenyl ring, and a thick one. Pentabenzene ring, triazine ring, anthracene ring, anthracene ring, anthracene ring, thiophene ring, furan ring, pyrrole ring, benzothiophene ring, benzofuran ring, anthracene ring, dibenzothiophene ring, diphenyl And furan ring, carbazole ring, thiazole ring, benzothiazole ring, Oxazole ring, benzo Oxazole ring, imidazole ring, pyrazole ring, benzimidazole ring, pyridine ring, pyrimidine ring, pyridyl Ring, 嗒 Ring, quinoline ring, isoquinoline ring, quin A phenyl ring, a benzothiadiazole ring.
該等之中,較佳為環結構骨架僅由碳原子構成者,較佳為苯環、萘環、蒽環、稠四苯環、稠五苯環、聯三伸苯環、芘環、茀環、茚環。更佳為苯環、萘環、茀環,進而較佳為苯環。 Among these, it is preferred that the ring structure skeleton is composed only of carbon atoms, and is preferably a benzene ring, a naphthalene ring, an anthracene ring, a condensed tetraphenyl ring, a fused pentacene ring, a ternary benzene ring, an anthracene ring or an anthracene. Ring, ring. More preferably, it is a benzene ring, a naphthalene ring, an anthracene ring, and further preferably a benzene ring.
上述式(1)中,於Y1為直接鍵且n1為2之情形時,作為 X2所鍵結之環,例如可列舉下述式(5-1)~(5-17)所表示之環。再者,下述式(5-1)~(5-17)中之記號*表示構成X1所鍵結之環且構成連結上述式(1)中之硼原子、Q1、及氮原子之骨架部分的碳原子與標附有記號*之任一碳原子鍵結。又,亦可於標附有記號*之碳原子除外之位置上與其他環結構縮環。該等之中,較佳為吡啶環、嘧啶環、喹啉環、啡啶環。 更佳為吡啶環、嘧啶環、喹啉環。進而較佳為吡啶環。 In the above formula (1), when Y 1 is a direct bond and n 1 is 2, the ring to which X 2 is bonded is, for example, represented by the following formulas (5-1) to (5-17). Ring. Further, the symbol * in the following formulae (5-1) to (5-17) represents a ring constituting X 1 and constitutes a boron atom, a Q 1 , and a nitrogen atom in the above formula (1). The carbon atom of the backbone moiety is bonded to any carbon atom to which the symbol * is attached. Further, it may be condensed with other ring structures at a position other than the carbon atom to which the mark * is attached. Among these, a pyridine ring, a pyrimidine ring, a quinoline ring, and a pyridine ring are preferable. More preferably, it is a pyridine ring, a pyrimidine ring, and a quinoline ring. Further, a pyridine ring is preferred.
又,上述式(1)中,於Y1為直接鍵且n1為2之情形時,作 為X3所鍵結之環及X4所鍵結之環,可列舉與上述Y1為直接鍵且n1為2之情形時X1所鍵結之環相同的環。該等之中,較佳為苯環、萘環、苯并噻吩環。更佳為苯環。 Further, in the above formula (1), when Y 1 is a direct bond and n 1 is 2, the ring to which X 3 is bonded and the ring to which X 4 is bonded may be a direct bond with Y 1 described above. And when n 1 is 2, the ring to which X 1 is bonded is the same ring. Among these, a benzene ring, a naphthalene ring, and a benzothiophene ring are preferable. More preferably, it is a benzene ring.
上述式(1)中,X1、X2、X3及X4相同或不同,表示氫原子、 或成為環結構之取代基的1價取代基。作為該1價取代基,並無特別限制,作為X1、X2、X3及X4,例如可列舉:氫原子、可具有取代基之芳基、雜環基、烷基、烯基、炔基、烷氧基、芳氧基、芳基烷氧基、矽基、羥基、胺基、鹵素原子、羧基、硫醇基、環氧基、醯基、可具有取代基之低聚芳基、1價低聚雜環基、烷硫基、芳硫基、芳基烷基、芳基烷氧基、芳基烷硫基、偶氮基、錫烷基、膦基、矽基氧基、可具有取代基之芳氧基羰基、可具有取代基之烷氧基羰基、可具有取代基之胺甲醯基、可具有取代基之芳基羰基、可具有取代基之烷基羰基、可具有取代基之芳基磺醯基、可具有取代基之烷基磺醯基、可具有取代基之芳基亞磺醯基、可具有取代基之烷基亞磺醯基、甲醯基、氰基、硝基、芳基磺醯氧基、烷基磺醯氧基;甲磺酸酯基、乙磺酸酯基、三氟甲磺酸酯基等烷基磺酸酯基;苯磺酸酯基、對甲苯磺酸酯基等芳基磺酸酯基;磺酸苄酯基等磺酸芳烷基酯基、硼烷基、鋶甲基、鏻甲基、膦酸酯甲基、磺酸芳酯基、醛基、乙腈基等。 In the above formula (1), X 1 , X 2 , X 3 and X 4 are the same or different and each represents a hydrogen atom or a monovalent substituent which is a substituent of the ring structure. The monovalent substituent is not particularly limited, and examples of X 1 , X 2 , X 3 and X 4 include a hydrogen atom, an aryl group which may have a substituent, a heterocyclic group, an alkyl group, and an alkenyl group. Alkynyl, alkoxy, aryloxy, arylalkoxy, fluorenyl, hydroxy, amine, halogen atom, carboxyl, thiol, epoxy, fluorenyl, oligoaryl group which may have a substituent a monovalent oligo heterocyclic group, an alkylthio group, an arylthio group, an arylalkyl group, an arylalkoxy group, an arylalkylthio group, an azo group, a tin alkyl group, a phosphino group, a decyloxy group, An aryloxycarbonyl group which may have a substituent, an alkoxycarbonyl group which may have a substituent, an amine carbenyl group which may have a substituent, an arylcarbonyl group which may have a substituent, an alkylcarbonyl group which may have a substituent, may have An arylsulfonyl group of a substituent, an alkylsulfonyl group which may have a substituent, an arylsulfinylene group which may have a substituent, an alkylsulfinyl group which may have a substituent, a mercapto group, a cyano group , nitro, arylsulfonyloxy, alkylsulfonyloxy; alkylsulfonate group such as mesylate group, ethanesulfonate group, triflate group; benzenesulfonate An aryl sulfonate group such as a p-toluenesulfonate group; an aralkyl sulfonate group such as a benzyl sulfonate group; a boryl group, a fluorenylmethyl group, a fluorenylmethyl group, a phosphonate methyl group, and a sulfonic acid aryl group; Ester group, aldehyde group, acetonitrile group and the like.
作為上述X1、X2、X3及X4中之取代基,可列舉:鹵素原子; 鹵烷基;碳數1~20之直鏈狀或支鏈狀烷基;碳數5~7之環狀烷基;碳數1~20之直鏈狀或支鏈狀烷氧基;羥基;硫醇基;硝基;氰基;胺基;偶氮基;具有碳數1~40之烷基之單或二烷基胺基;二苯基胺基、咔唑基等胺基;醯基;碳數2~20之烯基;碳數2~20之炔基;烯氧基;炔氧基;苯氧基、萘氧基、聯苯氧基、芘氧基等芳氧基;全氟基及進而之長鏈全氟基;硼烷基;羰基;羰氧基;烷氧基羰基;亞磺醯基;烷基磺醯氧基;芳基磺醯氧基;膦基;矽基;矽基氧基;錫烷基;可經鹵素原子或烷基、烷氧基等取代之苯基、2,6-二甲苯基、2,4,6-三甲苯基、荰基、聯苯基、聯三苯基、萘基、蒽基、芘基、甲苯甲醯基、大茴香基、氟苯基、二苯基胺基苯基、二甲基胺基苯基、二乙基胺基苯基、菲基等芳基;噻吩基、呋喃基、矽雜環戊二烯基、唑基、二唑基、噻唑基、噻二唑基、吖啶基、喹啉 基、喹啉基、啡啉基、苯并噻吩基、苯并噻唑基、吲哚基、咔唑基、吡啶基、吡咯基、苯并唑基、嘧啶基、咪唑基等雜環基;羧基;羧酸酯;環氧基;異氰基;氰酸酯基;異氰酸酯基;硫氰酸酯基;異硫氰酸酯基;胺甲醯基;N,N-二烷基胺甲醯基;甲醯基;亞硝基;甲醯氧基等。再者,該等基亦可經鹵素原子或烷基、芳基等取代,進而,該等基亦可相互於任意位置鍵結而形成環。 Examples of the substituent in the above X 1 , X 2 , X 3 and X 4 include a halogen atom; a haloalkyl group; a linear or branched alkyl group having 1 to 20 carbon atoms; and a carbon number of 5 to 7. a cyclic alkyl group; a linear or branched alkoxy group having 1 to 20 carbon atoms; a hydroxyl group; a thiol group; a nitro group; a cyano group; an amine group; an azo group; and an alkyl group having 1 to 40 carbon atoms Mono or dialkylamino group; amine group such as diphenylamino group or carbazolyl; fluorenyl group; alkenyl group having 2 to 20 carbon atoms; alkynyl group having 2 to 20 carbon atoms; alkenyloxy group; An aryloxy group such as a phenoxy group, a naphthyloxy group, a biphenyloxy group or a decyloxy group; a perfluoro group and further a long-chain perfluoro group; a boron alkyl group; a carbonyl group; a carbonyloxy group; an alkoxycarbonyl group; Sulfhydryl; alkylsulfonyloxy; arylsulfonyloxy; phosphino; fluorenyl; decyloxy; tin alkyl; phenyl substituted by halogen atom or alkyl, alkoxy, etc. 2,6-xylyl, 2,4,6-trimethylphenyl, fluorenyl, biphenyl, terphenyl, naphthyl, anthracenyl, fluorenyl, tolylmethyl, anisyl, fluorobenzene An aryl group such as a diphenylaminophenyl group, a dimethylaminophenyl group, a diethylaminophenyl group or a phenanthryl group; a thienyl group; Furanyl, silicon heterocyclyl pentadienyl, Azolyl, Diazolyl, thiazolyl, thiadiazolyl, acridinyl, quinolinyl, quin Boryl, morpholinyl, benzothienyl, benzothiazolyl, indolyl, oxazolyl, pyridyl, pyrrolyl, benzo a heterocyclic group such as an azolyl group, a pyrimidinyl group or an imidazolyl group; a carboxyl group; a carboxylate; an epoxy group; an isocyano group; a cyanate group; an isocyanate group; a thiocyanate group; an isothiocyanate group; Sulfhydryl; N,N-dialkylaminecarbamyl; indolyl; nitroso; methyloxy. Further, the groups may be substituted by a halogen atom, an alkyl group, an aryl group or the like, and further, the groups may be bonded to each other at any position to form a ring.
該等之中,作為X1、X2、X3及X4,較佳為氫原子;鹵素原 子、羧基、羥基、硫醇基、環氧基、胺基、偶氮基、醯基、烯丙基、硝基、烷氧基羰基、甲醯基、氰基、矽基、錫烷基、硼烷基、膦基、矽基氧基、芳基磺醯氧基、烷基磺醯氧基等反應性基;碳數1~20之直鏈狀或支鏈狀烷基;碳數1~8之直鏈狀或支鏈狀烷基、碳數1~8之直鏈狀或支鏈狀烷氧基、芳基、碳數2~8之烯基、碳數2~8之炔基或經該反應性基取代之碳數1~20之直鏈狀或支鏈狀烷基;碳數1~20之直鏈狀或支鏈狀烷氧基;碳數1~8之直鏈狀或支鏈狀烷基、碳數1~8之直鏈狀或支鏈狀烷氧基、芳基、碳數2~8之烯基、碳數2~8之炔基或經該反應性基取代之碳數1~20之直鏈狀或支鏈狀烷氧基;芳基;碳數1~8之直鏈狀或支鏈狀烷基、碳數1~8之直鏈狀或支鏈狀烷氧基、芳基、碳數2~8之烯基、碳數2~8之炔基或經該反應性基取代之芳基;低聚芳基;碳數1~8之直鏈狀或支鏈狀烷基、碳數1~8之直鏈狀或支鏈狀烷氧基、芳基、碳數2~8之烯基、碳數2~8之炔基或經該反應性基取代之低聚芳基;1價雜環基;碳數1~8之直鏈狀或支鏈狀烷基、碳數1~8之直鏈狀或支鏈狀烷氧基、芳基、碳數2~8之烯基、碳數2~8之炔基或經該反應性基取代之1價雜環基;1價低聚雜環基;碳數1~8之直鏈狀或支鏈狀烷基、碳數1~8之直鏈狀或支鏈狀烷氧基、芳基、碳數2~8之烯基、碳數2~8之炔基或經該反應性基取代之1價低聚雜環基;烷硫基;芳氧基;芳硫基;芳基烷基;芳基烷氧基;芳基烷硫基;烯 基;碳數1~8之直鏈狀或支鏈狀烷基、碳數1~8之直鏈狀或支鏈狀烷氧基、芳基、碳數2~8之烯基、碳數2~8之炔基或經該反應性基取代之烯基;炔基;碳數1~8之直鏈狀或支鏈狀烷基、碳數1~8之直鏈狀或支鏈狀烷氧基、芳基、碳數2~8之烯基、碳數2~8之炔基或經該反應性基取代之炔基。 Among these, as X 1 , X 2 , X 3 and X 4 , a hydrogen atom is preferred; a halogen atom, a carboxyl group, a hydroxyl group, a thiol group, an epoxy group, an amine group, an azo group, a decyl group, an alkene group. Propyl, nitro, alkoxycarbonyl, decyl, cyano, decyl, tin alkyl, boralkyl, phosphino, decyloxy, arylsulfonyloxy, alkylsulfonyloxy a reactive group; a linear or branched alkyl group having 1 to 20 carbon atoms; a linear or branched alkyl group having 1 to 8 carbon atoms; and a linear or branched chain having 1 to 8 carbon atoms; Alkoxy group, aryl group, alkenyl group having 2 to 8 carbon atoms, alkynyl group having 2 to 8 carbon atoms or linear or branched alkyl group having 1 to 20 carbon atoms substituted by the reactive group; carbon number a linear or branched alkoxy group of 1 to 20; a linear or branched alkyl group having 1 to 8 carbon atoms; a linear or branched alkoxy group having 1 to 8 carbon atoms; , an alkenyl group having 2 to 8 carbon atoms, an alkynyl group having 2 to 8 carbon atoms, or a linear or branched alkoxy group having 1 to 20 carbon atoms substituted by the reactive group; an aryl group; a carbon number of 1~ a linear or branched alkyl group of 8 , a linear or branched alkoxy group having 1 to 8 carbon atoms, an aryl group, an alkenyl group having 2 to 8 carbon atoms, an alkynyl group having 2 to 8 carbon atoms or Reactivity a substituted aryl group; an oligoaryl group; a linear or branched alkyl group having 1 to 8 carbon atoms; a linear or branched alkoxy group having 1 to 8 carbon atoms; an aryl group; Alkenyl group of ~8, alkynyl group having 2 to 8 carbon atoms or oligomeric aryl group substituted by the reactive group; monovalent heterocyclic group; linear or branched alkyl group having 1 to 8 carbon atoms, carbon a linear or branched alkoxy group of 1 to 8, an aryl group, an alkenyl group having 2 to 8 carbon atoms, an alkynyl group having 2 to 8 carbon atoms or a monovalent heterocyclic group substituted with the reactive group; a monovalent oligo heterocyclic group; a linear or branched alkyl group having 1 to 8 carbon atoms; a linear or branched alkoxy group having 1 to 8 carbon atoms; an aryl group; and a carbon number of 2 to 8 An alkenyl group, an alkynyl group having 2 to 8 carbon atoms or a monovalent oligomeric heterocyclic group substituted with the reactive group; an alkylthio group; an aryloxy group; an arylthio group; an arylalkyl group; an arylalkoxy group; Arylalkylthio; alkenyl; linear or branched alkyl having 1 to 8 carbon atoms; linear or branched alkoxy having 1 to 8 carbon atoms; aryl group, carbon number 2 to 8 Alkenyl group, alkynyl group having 2 to 8 carbon atoms or alkenyl group substituted with the reactive group; alkynyl group; linear or branched alkyl group having 1 to 8 carbon atoms; linear chain having 1 to 8 carbon atoms Or branched alkoxy, aryl, carbon An alkenyl group of 2 to 8 or an alkynyl group having 2 to 8 carbon atoms or an alkynyl group substituted by the reactive group.
更佳為氫原子、溴原子、碘原子、胺基、硼烷基、炔基、烯基、甲醯基、矽基、錫烷基、膦基、經該反應性基取代之芳基、經該反應性基取代之低聚芳基、1價雜環基或經該反應性基取代之1價雜環基、經該反應性基取代之1價低聚雜環基、烯基或經該反應性基取代之烯基、炔基或經該反應性基取代之炔基。其中,作為X1及X2,進而較佳為氫原子、烷基、芳基、含氮雜芳香族基、烯基、烷氧基、芳氧基、矽基等耐還原之官能基。尤佳為氫原子、芳基、含氮雜芳香族基。又,作為X3及X4,進而較佳為氫原子、咔唑基、三苯基胺基、噻吩基、呋喃基、烷基、芳基、吲哚基等耐氧化之官能基。尤佳為氫原子、咔唑基、三苯基胺基、噻吩基。如此,可認為若設為具有耐還原之官能基作為X1及X2,具有耐氧化之官能基作為X3及X4者,則含硼化合物整體進而成為耐還原且耐氧化之化合物。 More preferably, it is a hydrogen atom, a bromine atom, an iodine atom, an amine group, a boryl group, an alkynyl group, an alkenyl group, a decyl group, a decyl group, a tin alkyl group, a phosphino group, an aryl group substituted with the reactive group, The reactive group-substituted oligoaryl group, monovalent heterocyclic group or a monovalent heterocyclic group substituted with the reactive group, a monovalent oligo heterocyclic group substituted with the reactive group, an alkenyl group or the like A reactive group-substituted alkenyl group, alkynyl group or an alkynyl group substituted with the reactive group. Among them, X 1 and X 2 are more preferably a functional group which is resistant to reduction such as a hydrogen atom, an alkyl group, an aryl group, a nitrogen-containing heteroaromatic group, an alkenyl group, an alkoxy group, an aryloxy group or a fluorenyl group. More preferably, it is a hydrogen atom, an aryl group, or a nitrogen-containing heteroaromatic group. Further, X 3 and X 4 are more preferably an oxidation-resistant functional group such as a hydrogen atom, a carbazolyl group, a triphenylamine group, a thienyl group, a furyl group, an alkyl group, an aryl group or a fluorenyl group. More preferably, it is a hydrogen atom, a carbazolyl group, a triphenylamino group, and a thienyl group. As described above, when the functional group having a reduction-resistant functional group is used as X 1 and X 2 and the functional group having oxidation resistance is used as X 3 and X 4 , the boron-containing compound as a whole is further resistant to reduction and oxidation.
再者,上述式(1)中,於X1、X2、X3及X4為1價取代基之情形時,X1、X2、X3及X4對環結構之鍵結位置或鍵結個數並無特別限制。 Further, in the above formula (1), when X 1 , X 2 , X 3 and X 4 are a monovalent substituent, X 1 , X 2 , X 3 and X 4 are bonded to the ring structure or The number of key combinations is not particularly limited.
上述式(1)中,於Y1為n1價之連結基且n1為2~10之情形 時,X1所鍵結之環與上述式(1)中Y1為直接鍵且n1為2之情形時X1所鍵結之環相同。其等環之中,較佳為苯環、萘環、苯并噻吩環。更佳為苯環。 When in the above formula (1), in Y 1 is n 1 price of the linking group and n 1 is the case of 2 to 10 of, X 1 are bonded Ring above formula (1), Y 1 is a direct bond and n 1 In the case of 2, the ring to which X 1 is bonded is the same. Among the isocyclic rings, a benzene ring, a naphthalene ring, and a benzothiophene ring are preferred. More preferably, it is a benzene ring.
上述式(1)中,於Y1為n1價之連結基且n1為2~10之情形 時,X2所鍵結之環、X3所鍵結之環、及X4所鍵結之環分別與上述式(1)中Y1為直接鍵且n1為2之情形時作為X2所鍵結之環、X3所鍵結之環、及X4所鍵結之環所列舉之環相同,較佳結構亦相同。 In the above formula (1), when Y 1 is a linking group of n 1 valence and n 1 is 2 to 10, a ring bonded by X 2 , a ring bonded by X 3 , and a bond of X 4 The ring is respectively a ring in which Y 1 is a direct bond and n 1 is 2 in the above formula (1), as a ring to which X 2 is bonded, a ring to which X 3 is bonded, and a ring to which X 4 is bonded. The rings are the same and the preferred structure is the same.
即,上述式(1)中之Y1為直接鍵且n1為2之情形及Y1為
n1價之連結基且n1為2~10之情形之任一情形時,上述式(1)所表示之含硼化合物為下述式(6)所表示之含硼化合物的形態均亦又為本發明之較佳實施形態之一:
(式中,自氮原子指向硼原子之箭頭、X1、X2、X3、X4、n1 及Y1與式(1)相同)。 (In the formula, the arrow from the nitrogen atom to the boron atom, X 1 , X 2 , X 3 , X 4 , n 1 and Y 1 are the same as in the formula (1)).
上述式(1)所表示之含硼化合物可藉由使用Suzuki偶合反 應等通常所應用之各種反應而合成。又,亦可藉由美國化學會誌(Journal of the American Chemical Society),2009年,第131卷,第40號,14549-14559頁中所記載之方法而合成。 The boron-containing compound represented by the above formula (1) can be reversed by using Suzuki coupling It should be synthesized in accordance with various reactions which are usually applied. Further, it can also be synthesized by the method described in Journal of the American Chemical Society, 2009, Vol. 131, No. 40, pp. 14549-14559.
若列舉上述式(1)所表示之含硼化合物之合成流程之一例,則如下述反應式所示。下述反應式(I)表示上述式(1)所表示之含硼化合物中Y1為直接鍵,n1為2的化合物之合成流程之一例,下述反應式(II)表示上述式(1)所表示之含硼化合物中Y1為n1價之連結基,n1為2~10的化合物之合成流程之一例。但是,上述式(1)所表示之含硼化合物之製造方法並不限制於此。 An example of the synthesis scheme of the boron-containing compound represented by the above formula (1) is shown in the following reaction formula. The reaction represented by the following formula (I) of the boron-containing compound represented by the above formula (1), Y 1 is a direct bond, N1 is an example of the process of synthesis of Compound 2, the reaction represented by the following formula (II) above formula (1) In the boron-containing compound, an example of a synthesis scheme in which Y 1 is a linking group of n 1 valence and n 1 is a compound of 2 to 10. However, the method for producing the boron-containing compound represented by the above formula (1) is not limited thereto.
再者,下述流程中,成為原料之(a)之化合物例如可藉由有機化學雜誌(Journal of Organic Chemistry),2010年,第75卷,第24號,8709-8712頁中所記載之方法而合成。又,成為原料之(b)之化合物可與(a)之化合 物藉由下述反應式(III)所表示之硼化反應而合成。 Further, in the following scheme, the compound (a) which is a raw material can be, for example, a method described in Journal of Organic Chemistry, 2010, Vol. 75, No. 24, No. 8709-8712. And synthesis. Further, the compound of (b) which becomes a raw material can be combined with (a) The product was synthesized by a boronation reaction represented by the following reaction formula (III).
其次,對使包含上述式(2)所表示之含硼化合物之單體成 分聚合而獲得的含硼聚合物進行記述。 Next, the monomer containing the boron-containing compound represented by the above formula (2) is formed. The boron-containing polymer obtained by partial polymerization is described.
上述式(2)中,虛線之圓弧表示與連結硼原子與氮原子之骨架部分之一部分一起形成環結構。即,表示上述式(2)所表示之含硼化合物於結構中具有至少2個環結構,且上述式(2)中含有連結硼原子與氮原子之骨架部分作為該環結構之一部分。 In the above formula (2), an arc of a broken line indicates a ring structure together with a portion of a skeleton portion to which a boron atom and a nitrogen atom are bonded. That is, the boron-containing compound represented by the above formula (2) has at least two ring structures in the structure, and the above formula (2) contains a skeleton portion linking a boron atom and a nitrogen atom as a part of the ring structure.
上述式(2)中,連結硼原子與氮原子之骨架部分中之虛線部分表示至少1對原子以雙鍵連結,表示該雙鍵亦可與環結構共軛。式(1)所表示之化合物中,作為雙鍵與環結構共軛者,例如可列舉如下述式(7-1)~(7-4)之結構者。 In the above formula (2), the dotted line in the skeleton portion connecting the boron atom and the nitrogen atom indicates that at least one pair of atoms is linked by a double bond, and the double bond may be conjugated to the ring structure. In the compound represented by the formula (1), the double bond and the ring structure are conjugated, and examples thereof include those of the following formulae (7-1) to (7-4).
上述式(2)中,自氮原子指向硼原子之箭頭表示氮原子對 硼原子進行配位。所謂配位,係指與上述式(1)中之氮原子對硼原子之配位相同之含義。 In the above formula (2), an arrow pointing from a nitrogen atom to a boron atom indicates a pair of nitrogen atoms The boron atom is coordinated. The term "coordination" means the same meaning as the coordination of the nitrogen atom in the above formula (1) with respect to the boron atom.
上述式(2)中,X5及X6相同或不同,表示氫原子或成為環結構之取代基的1價取代基,亦可於形成虛線之圓弧部分之環結構上鍵結複數個。即,於X5及X6為氫原子之情形時,表示式(2)所表示之含硼化合物之結構中,具有X5及X6之2個環結構不具有取代基,於X5及/或X6為1價取代基之情形時,該2個環結構之任一者或全部具有取代基。於此情形時,1個環結構所具有之取代基之個數可為1個,亦可為2個。 In the above formula (2), X 5 and X 6 are the same or different and each represents a hydrogen atom or a monovalent substituent which is a substituent of the ring structure, and may be bonded to a plurality of ring structures forming a circular arc portion of a broken line. In other words, when X 5 and X 6 are a hydrogen atom, the structure of the boron-containing compound represented by the formula (2) has two ring structures of X 5 and X 6 having no substituent, and X 5 and In the case where X 6 is a monovalent substituent, any one or all of the two ring structures have a substituent. In this case, the number of substituents in one ring structure may be one or two.
上述式(2)中,R1及R2相同或不同,表示氫原子或1價取 代基。該R1及R2可相同亦可不同,較佳為相同。作為該R1及R2,並無特別限制,例如可列舉:氫原子、可具有取代基之芳基、雜環基、烷基、烷氧基、芳基烷氧基、矽基、羥基、氧硼氧基、胺基、鹵素原子、R1與R2鍵結而成的2,2'-聯苯基、可具有取代基之低聚芳基、1價低聚雜環基、烷硫基、芳硫基、芳基烷基、芳基烷氧基、芳基烷硫基、偶氮基、錫烷基、膦基、矽基氧基、芳基磺醯氧基、烷基磺醯氧基;烷基磺酸酯基;芳基磺酸酯基;芳基烷基磺酸酯基;下述式(8-1)~(8-4)所表示之基等硼烷基;下述式(8-5)~(8-6)所表示之基等鋶甲基;下述式(8-7)所表示之基等 鏻甲基;下述式(8-8)所表示之基等膦酸酯甲基;磺酸芳酯基;醛基;乙腈基;下述式(8-9)所表示之鹵化鎂等。 In the above formula (2), R 1 and R 2 are the same or different and each represents a hydrogen atom or a monovalent substituent. The R 1 and R 2 may be the same or different, and are preferably the same. The R 1 and R 2 are not particularly limited, and examples thereof include a hydrogen atom, an aryl group which may have a substituent, a heterocyclic group, an alkyl group, an alkoxy group, an arylalkoxy group, a decyl group, and a hydroxyl group. Oxyboronic acid, amine group, halogen atom, 2,2'-biphenyl group in which R 1 and R 2 are bonded, oligoaryl group which may have a substituent, monovalent oligomeric heterocyclic group, alkyl sulfide , arylthio, arylalkyl, arylalkoxy, arylalkylthio, azo, stanny, phosphino, decyloxy, arylsulfonyloxy, alkylsulfonyl An oxyalkyl group; an aryl sulfonate group; an arylalkyl sulfonate group; a boroalkyl group represented by the following formulas (8-1) to (8-4); The methyl group represented by the formula (8-5) to (8-6); the methyl group represented by the following formula (8-7); the methyl group represented by the following formula (8-8); Phosphonic acid methyl group; aryl sulfonate group; aldehyde group; acetonitrile group; magnesium halide represented by the following formula (8-9).
再者,式中Me表示甲基。Et表示乙基。X表示鹵素原子。R'表示烷基、芳基、或芳基烷基。 Further, in the formula, Me represents a methyl group. Et represents an ethyl group. X represents a halogen atom. R' represents an alkyl group, an aryl group or an arylalkyl group.
作為上述芳基,可列舉:苯基、聯苯基、萘基、四氫萘基、 茚基、二氫茚基等。該等之中,較佳為苯基、聯苯基、萘基。 Examples of the aryl group include a phenyl group, a biphenyl group, a naphthyl group, and a tetrahydronaphthyl group. Mercapto, dihydroindenyl and the like. Among these, a phenyl group, a biphenyl group, and a naphthyl group are preferable.
作為上述雜環基,可列舉:吡咯基、吡啶基、喹啉基、哌啶基(piperidinyl)、N-六氫吡啶基(piperidino)、呋喃基、噻吩基等。該等之中,較佳為吡啶基、噻吩基。 Examples of the heterocyclic group include a pyrrolyl group, a pyridyl group, a quinolyl group, a piperidinyl group, an N-hexahydropyridyl group (piperidino), a furyl group, and a thienyl group. Among these, a pyridyl group and a thienyl group are preferable.
作為上述鹵素原子,可列舉:氟原子、氯原子、溴原子、碘原子,該等之中,較佳為溴原子、碘原子。 The halogen atom may, for example, be a fluorine atom, a chlorine atom, a bromine atom or an iodine atom, and among these, a bromine atom or an iodine atom is preferred.
作為上述烷基,可列舉:碳數1~30之直鏈狀或支鏈狀烴 基、碳數3~30之脂環式烴基。即,本發明之第1有機電激發光元件中,緩衝層由使包含上述式(2)所表示之含硼化合物之單體成分聚合而獲得的含硼聚合物形成,式(2)所表示之含硼化合物中之R1及R2相同或不同,為碳數1~30之直鏈狀或支鏈狀烴基、或碳數3~30之脂環式烴基的形態亦又為本發明之較佳實施形態之一。 The alkyl group may, for example, be a linear or branched hydrocarbon group having 1 to 30 carbon atoms or an alicyclic hydrocarbon group having 3 to 30 carbon atoms. In the first organic electroluminescent device of the present invention, the buffer layer is formed of a boron-containing polymer obtained by polymerizing a monomer component containing the boron-containing compound represented by the above formula (2), and is represented by the formula (2). In the boron-containing compound, R 1 and R 2 are the same or different, and a form of a linear or branched hydrocarbon group having 1 to 30 carbon atoms or an alicyclic hydrocarbon group having 3 to 30 carbon atoms is also a form of the present invention. One of the preferred embodiments.
作為上述烷基,該等之中,較佳為甲基、乙基、異丙基、異丁基、辛基。更佳為甲基、乙基、異丁基、辛基。 Among the above alkyl groups, among these, a methyl group, an ethyl group, an isopropyl group, an isobutyl group, and an octyl group are preferable. More preferably, it is a methyl group, an ethyl group, an isobutyl group, or an octyl group.
作為上述R1及R2中之取代基,可列舉與上述式(1)之X1 ~X4中之取代基相同的取代基。 Examples of the substituent in R 1 and R 2 include the same substituents as those in X 1 to X 4 of the above formula (1).
該等之中,作為上述R1及R2中之1價取代基所具有的取代基,較佳為鹵素原子、碳數1~4之直鏈狀或支鏈狀烷基、碳數1~8之直鏈狀或支鏈狀烷氧基、芳基、鹵烷基。更佳為乙基、異丙基、辛基、氟原子、溴原子、乙烯基、乙炔基、二苯基胺基、二苯基胺基苯基、三氟甲基。 Among these, the substituent which the monovalent substituent in the above R 1 and R 2 has is preferably a halogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, and a carbon number of 1~. a linear or branched alkoxy group, an aryl group or a haloalkyl group of 8. More preferred are ethyl, isopropyl, octyl, fluorine atom, bromine atom, vinyl group, ethynyl group, diphenylamino group, diphenylaminophenyl group, trifluoromethyl group.
作為上述R1及R2,上述者之中,更佳為氫原子、溴原子、 甲基、乙基、異丙基、異丁基、正辛基、苯基、4-甲氧基苯基、4-三氟甲基苯基、五氟苯基、4-溴苯基、2,2'-聯苯基、苯乙烯基、二苯基胺基苯基。進而較佳為溴原子、甲基、乙基、異丙基、異丁基、正辛基、苯基、4-甲氧基苯基、4-三氟甲基苯基、五氟苯基、4-溴苯基、2,2'-聯苯基、苯乙烯基、二苯基胺基苯基,尤佳為溴原子、異丙基、異丁基、正辛基、苯基、4-三氟甲基苯基、五氟苯基、4-溴苯基、2,2'-聯苯基、苯乙烯基、二苯基胺基苯基。 The above R 1 and R 2 are more preferably a hydrogen atom, a bromine atom, a methyl group, an ethyl group, an isopropyl group, an isobutyl group, an n-octyl group, a phenyl group or a 4-methoxyphenyl group. 4-trifluoromethylphenyl, pentafluorophenyl, 4-bromophenyl, 2,2'-biphenyl, styryl, diphenylaminophenyl. Further preferred are a bromine atom, methyl, ethyl, isopropyl, isobutyl, n-octyl, phenyl, 4-methoxyphenyl, 4-trifluoromethylphenyl, pentafluorophenyl, 4-bromophenyl, 2,2'-biphenyl, styryl, diphenylaminophenyl, especially bromine, isopropyl, isobutyl, n-octyl, phenyl, 4- Trifluoromethylphenyl, pentafluorophenyl, 4-bromophenyl, 2,2'-biphenyl, styryl, diphenylaminophenyl.
上述式(2)中,X5及X6相同或不同,表示氫原子或成為環 結構之取代基的1價取代基。作為該1價取代基,並無特別限制,可列舉與上述R1及R2相同者。 In the above formula (2), X 5 and X 6 are the same or different and each represents a hydrogen atom or a monovalent substituent which is a substituent of the ring structure. The monovalent substituent is not particularly limited, and examples thereof are the same as those of R 1 and R 2 described above.
該等之中,作為X5及X6,較佳為氫原子;鹵素原子、羧基、 羥基、硫醇基、環氧基、異氰酸酯基、胺基、偶氮基、醯基、烯丙基、硝基、烷氧基羰基、甲醯基、氰基、矽基、錫烷基、硼烷基、膦基、矽基氧基、芳基磺醯氧基、烷基磺醯氧基等反應性基;碳數1~4之直鏈狀或支鏈狀烷基或經該反應性基取代之碳數1~4之直鏈狀或支鏈狀烷基;碳數1~8之直鏈狀或支鏈狀烷氧基或經該反應性基取代之碳數1~8之直鏈狀或支鏈狀烷氧基;芳基或經該反應性基取代之芳基;低聚芳基或經該反應性基取代之低聚芳基;1價雜環基或經該反應性基取代之1價雜環基;1價低聚雜環基或經該反應性基取代之1價低聚雜環基;烷硫基;芳氧基;芳硫基;芳基烷基;芳基烷氧基;芳基烷硫基;烯基或經該反應性基取代之烯基;炔基或經該反應性基取代之炔基。更佳為氫原子、溴原子、碘原子、硼烷基、炔基、烯基、甲醯基、錫烷基、膦基、芳基或經該反應性基取代之芳基、經該反應性基取代之低聚芳基、二苯基胺基等胺基、下述式(8-10)所表示之基等1價雜環基或經該反應性基取代之1價雜環基、經該反應性基取代之1價低聚雜環基、烯基或經該反應性基取代之烯基、炔基或經該反應性基取代之炔基。 Among these, X 5 and X 6 are preferably a hydrogen atom; a halogen atom, a carboxyl group, a hydroxyl group, a thiol group, an epoxy group, an isocyanate group, an amine group, an azo group, a decyl group, an allyl group, Reactivity such as nitro, alkoxycarbonyl, decyl, cyano, decyl, tin alkyl, boralkyl, phosphino, decyloxy, arylsulfonyloxy, alkylsulfonyloxy a linear or branched alkyl group having 1 to 4 carbon atoms or a linear or branched alkyl group having 1 to 4 carbon atoms substituted with the reactive group; a linear chain having 1 to 8 carbon atoms; Or a branched alkoxy group or a linear or branched alkoxy group having 1 to 8 carbon atoms substituted with the reactive group; an aryl group or an aryl group substituted with the reactive group; an oligomeric aryl group or An oligomeric aryl group substituted with the reactive group; a monovalent heterocyclic group or a monovalent heterocyclic group substituted with the reactive group; a monovalent oligo heterocyclic group or a monovalent oligomeric group substituted with the reactive group Heterocyclyl; alkylthio; aryloxy; arylthio; arylalkyl; arylalkoxy; arylalkylthio; alkenyl or alkenyl substituted by the reactive group; The alkynyl group substituted with the reactive group. More preferably, it is a hydrogen atom, a bromine atom, an iodine atom, a boryl group, an alkynyl group, an alkenyl group, a decyl group, a tin alkyl group, a phosphino group, an aryl group or an aryl group substituted with the reactive group, and the reactivity a monovalent heterocyclic group such as an oligoaryl group or a diphenylamino group, a monovalent heterocyclic group such as a group represented by the following formula (8-10), or a monovalent heterocyclic group substituted with the reactive group; The reactive group-substituted monovalent oligo heterocyclic group, alkenyl group or an alkenyl group substituted with the reactive group, an alkynyl group or an alkynyl group substituted with the reactive group.
上述式(2)中之X5、X6、R1及R2中之至少一者為具有反應 性基之取代基。作為具有反應性基之取代基,較佳為鹵素原子、羧基、羥 基、硫醇基、環氧基、異氰酸酯基、胺基、偶氮基、醯基、烯丙基、硝基、烷氧基羰基、甲醯基、氰基、矽基、錫烷基、硼烷基、膦基、矽基氧基、芳基磺醯氧基、烷基磺醯氧基等反應性基;經該反應性基取代之碳數1~4之直鏈狀或支鏈狀烷基;經該反應性基取代之碳數1~8之直鏈狀或支鏈狀烷氧基;經該反應性基取代之芳基;經該反應性基取代之低聚芳基;經該反應性基取代之1價雜環基;經該反應性基取代之1價低聚雜環基;烯基或經該反應性基取代之烯基;炔基或經該反應性基取代之炔基。更佳為溴原子、碘原子、硼烷基、甲醯基、錫烷基、膦基、經該反應性基取代之芳基、經該反應性基取代之低聚芳基、經該反應性基取代之1價雜環基、經該反應性基取代之1價低聚雜環基、烯基或經該反應性基取代之烯基、炔基或經該反應性基取代之炔基。進而較佳為溴原子、硼烷基、甲醯基、錫烷基、膦基、經該反應性基取代之芳基、經該反應性基取代之低聚芳基、經該反應性基取代之1價雜環基、經該反應性基取代之1價低聚雜環基、烯基或經該反應性基取代之烯基、炔基或經該反應性基取代之炔基。 At least one of X 5 , X 6 , R 1 and R 2 in the above formula (2) is a substituent having a reactive group. The substituent having a reactive group is preferably a halogen atom, a carboxyl group, a hydroxyl group, a thiol group, an epoxy group, an isocyanate group, an amine group, an azo group, a decyl group, an allyl group, a nitro group or an alkoxy group. a reactive group such as a carbonyl group, a decyl group, a cyano group, a decyl group, a tin alkyl group, a boryl group, a phosphino group, a decyloxy group, an arylsulfonyloxy group or an alkylsulfonyloxy group; a linear or branched alkyl group having 1 to 4 carbon atoms; a linear or branched alkoxy group having 1 to 8 carbon atoms substituted by the reactive group; substituted by the reactive group An aryl group; an oligomeric aryl group substituted with the reactive group; a monovalent heterocyclic group substituted with the reactive group; a monovalent oligo heterocyclic group substituted with the reactive group; an alkenyl group or the reactivity a substituted alkenyl group; an alkynyl group or an alkynyl group substituted with the reactive group. More preferably, it is a bromine atom, an iodine atom, a boryl group, a decyl group, a tin alkyl group, a phosphino group, an aryl group substituted with the reactive group, an oligomeric aryl group substituted with the reactive group, and the reactivity a monovalent heterocyclic group substituted with a monovalent group, a monovalent oligo heterocyclic group substituted with the reactive group, an alkenyl group or an alkenyl group substituted with the reactive group, an alkynyl group or an alkynyl group substituted with the reactive group. Further preferred are a bromine atom, a boryl group, a decyl group, a tin alkyl group, a phosphino group, an aryl group substituted with the reactive group, an oligomeric aryl group substituted with the reactive group, and substituted with the reactive group. a monovalent heterocyclic group, a monovalent oligo heterocyclic group substituted with the reactive group, an alkenyl group or an alkenyl group substituted with the reactive group, an alkynyl group or an alkynyl group substituted with the reactive group.
於上述X5、X6、R1及R2中之兩者為具有反應性基之取代基之情形時,將該等兩個取代基所具有之反應性基設為不同者,成為1種含硼化合物可單獨聚縮合的反應性基組合,或者包含2種以上之式(2)所表示之含硼化合物,成為具有該等含硼化合物可共聚合的反應性基組合者,或者成為具有式(2)所表示之含硼化合物之1種或2種以上與具有至少1個反應性基之其他化合物可共聚合的反應性基組合者,藉此可較佳地用作聚合物之原料。 In the case where both of X 5 , X 6 , R 1 and R 2 are a substituent having a reactive group, the reactive groups of the two substituents are different, and one type is used. The boron-containing compound may be a combination of a reactive group which is condensed by a single polymerization, or a boron-containing compound represented by the formula (2), or a reactive group which has such a boron-containing compound to be copolymerized, or may have A combination of one or more boron-containing compounds represented by the formula (2) and a reactive group copolymerizable with another compound having at least one reactive group, whereby it can be preferably used as a raw material of the polymer .
上述式(2)中,作為X5所鍵結之環,例如可列舉:苯環、 噻吩環、苯并噻吩環、噻唑環、唑環、萘環、蒽環、稠四苯環、稠五苯環、咪唑環、吡唑環、吡啶環、嗒環、吡環、嘧啶環、喹啉環、異喹啉環,該等分別以下述式(9-1)~(9-17)表示。該等之中,較佳為苯 環、萘環、苯并噻吩環。 In the above formula (2), examples of the ring to which X 5 is bonded include a benzene ring, a thiophene ring, a benzothiophene ring, and a thiazole ring. Oxazole ring, naphthalene ring, anthracene ring, fused tetraphenyl ring, fused pentabenzene ring, imidazole ring, pyrazole ring, pyridine ring, hydrazine Ring, pyr The ring, the pyrimidine ring, the quinoline ring, and the isoquinoline ring are represented by the following formulas (9-1) to (9-17), respectively. Among these, a benzene ring, a naphthalene ring, and a benzothiophene ring are preferable.
又,上述式(2)中,作為X6所鍵結之環,例如可列舉:吡 咯環、吡唑環、咪唑環、吡啶環、嗒環、吡環、嘧啶環、吲哚環、異吲哚環、喹啉環、異喹啉環、啡啶環、噻唑環、唑環。該等分別以下述式(10-1)~(10-14)表示。該等之中,較佳為吡啶環、嘧啶環、喹啉環、啡啶環。更佳為吡啶環、嘧啶環、喹啉環。 Further, in the above formula (2), examples of the ring to which X 6 is bonded include a pyrrole ring, a pyrazole ring, an imidazole ring, a pyridine ring, and an anthracene. Ring, pyr Ring, pyrimidine ring, anthracene ring, isoindole ring, quinoline ring, isoquinoline ring, pyridine ring, thiazole ring, Oxazole ring. These are represented by the following formulas (10-1) to (10-14), respectively. Among these, a pyridine ring, a pyrimidine ring, a quinoline ring, and a pyridine ring are preferable. More preferably, it is a pyridine ring, a pyrimidine ring, and a quinoline ring.
上述式(2)所表示之含硼化合物中,於X5及/或X6為1 價取代基之情形時,X5及/或X6對環結構之鍵結位置或鍵結個數並無特別限制。 In the boron-containing compound represented by the above formula (2), when X 5 and/or X 6 is a monovalent substituent, the bonding position or the number of bonding of the ring structure of X 5 and/or X 6 is There are no special restrictions.
又,環結構上鍵結有至少2個1價取代基作為X5,該1價取代基中之一者為可具有取代基之硼烷基,該1價取代基中之另一者為可具有取代基之吡啶基,且該吡啶基之氮原子對該硼烷基之硼原子進行配位的形態亦又為本發明之較佳實施形態之一。即,上述式(2)所表示之含硼化合物於結 構中存在2個以上氮原子對硼原子進行配位之部分的形態亦又為本發明之較佳實施形態之一。 Further, at least two monovalent substituents are bonded to the ring structure as X 5 , and one of the monovalent substituents is a boryl group which may have a substituent, and the other of the monovalent substituents may be The pyridyl group having a substituent, and the nitrogen atom of the pyridyl group is coordinated to the boron atom of the boron alkyl group is also one of preferred embodiments of the present invention. That is, the form in which the boron-containing compound represented by the above formula (2) has a portion in which two or more nitrogen atoms are coordinated to a boron atom in the structure is also one of preferred embodiments of the present invention.
本發明中,上述式(2)中,X5及X6之至少一者為具有於末 端部具有2個原子以雙鍵連結之結構,且以該2個原子中之一原子與形成虛線之圓弧部分之環結構鍵結的結構之取代基的形態亦又為本發明之較佳實施形態之一。即,形成有機電激發光元件之緩衝層之具有硼原子之有機化合物為含硼聚合物,成為該含硼聚合物之原料之單體成分所含的含硼化合物為具有硼原子及雙鍵的含硼化合物,且該含硼化合物為特徵在於以下述式(2)表示,且上述X5及X6之至少一者具有於末端部具有2個原子以雙鍵鍵結之結構,且以該2個原子中之一原子與形成虛線之圓弧部分之環結構鍵結的結構之含硼化合物的形態亦又為本發明之較佳實施形態之一: In the above formula (2), at least one of X 5 and X 6 has a structure in which two atoms are bonded to each other at a terminal portion by a double bond, and one of the two atoms forms a dotted line. The form of the substituent of the structure of the ring structure of the arc portion is also one of the preferred embodiments of the present invention. That is, the organic compound having a boron atom forming the buffer layer of the organic electroluminescent device is a boron-containing polymer, and the boron-containing compound contained in the monomer component of the raw material of the boron-containing polymer has a boron atom and a double bond. a boron-containing compound, wherein the boron-containing compound is represented by the following formula (2), and at least one of the above-mentioned X 5 and X 6 has a structure in which two atoms are bonded at a terminal portion by a double bond, and The form of the boron-containing compound in which one of the two atoms is bonded to the ring structure forming the arc portion of the dotted line is also one of the preferred embodiments of the present invention:
(式中,虛線之圓弧表示與連結硼原子與氮原子之骨架部分 之一部分一起形成環結構;連結硼原子與氮原子之骨架部分中之虛線部分表示至少1對原子以雙鍵連結,該雙鍵亦可與環結構共軛;自氮原子指向硼原子之箭頭表示氮原子對硼原子進行配位;X5及X6相同或不同,表示氫原子或成為環結構之取代基的1價取代基,亦可於形成虛線之圓弧部分之環結構上鍵結複數個;R1及R2相同或不同,表示氫原子或1價取代基)。 (wherein, the circular arc of the dotted line indicates a ring structure together with a portion of the skeleton portion linking the boron atom and the nitrogen atom; and the broken line portion in the skeleton portion connecting the boron atom and the nitrogen atom indicates that at least one pair of atoms are linked by a double bond, The double bond may also be conjugated to the ring structure; the arrow from the nitrogen atom to the boron atom indicates that the nitrogen atom coordinates the boron atom; and X 5 and X 6 are the same or different, indicating a hydrogen atom or a valence of a substituent which becomes a ring structure. The substituent may be bonded to a plurality of ring structures forming a circular arc portion of a broken line; R 1 and R 2 are the same or different and represent a hydrogen atom or a monovalent substituent).
上述所謂於末端部具有2個原子以雙鍵連結之結構,且以該 2個原子中之一原子與形成虛線之圓弧部分之環結構鍵結的結構,即意指構成X5及/或X6之原子團中,各結構之末端部存在至少2個,該末端部中與 上述式(2)中形成虛線之圓弧部分之環結構鍵結之末端部具有與形成虛線之圓弧部分之環結構鍵結之原子與該原子之相鄰原子以雙鍵連結的結構。 作為此種取代基,可列舉如下述式(11-1)~(11-2)所表示之結構。 The above-mentioned structure in which two atoms are connected by a double bond at the terminal portion, and a structure in which one of the two atoms is bonded to a ring structure forming a circular arc portion of a broken line means that X 5 and/or In the atomic group of X 6 , at least two end portions of each structure are present, and the end portion of the end portion which is bonded to the ring structure forming the arc portion of the broken line in the above formula (2) has a circular arc portion which forms a broken line. A structure in which an atom of a ring structure is bonded to a neighboring atom of the atom by a double bond. Examples of such a substituent include the structures represented by the following formulas (11-1) to (11-2).
再者,式(11-1)~(11-2)中,*表示與式(2)中形成虛線之圓弧部分之環結構鍵結之原子。r1、r2、r3及r4相同或不同,表示可於r1與r2之間、及r3與r4之間分別形成雙鍵之原子。式(11-1)中,q1表示氫原子或1價有機基,表示亦可根據r2之原子價而於r2上鍵結複數個。式(11-2)中,虛線之圓弧表示與由r3及r4形成之雙鍵部分一起形成環結構。q2表示氫原子或成為環結構之取代基的1價取代基,表示亦可於式(11-2)中之形成虛線之圓弧部分之環結構上鍵結複數個。 Further, in the formulae (11-1) to (11-2), * represents an atom bonded to a ring structure forming a circular arc portion of a broken line in the formula (2). r 1 , r 2 , r 3 and r 4 are the same or different and each represents an atom which can form a double bond between r 1 and r 2 and between r 3 and r 4 . In the formula (11-1), q 1 represents a hydrogen atom or a monovalent organic group, and it is also indicated that a plurality of bonds may be bonded to r 2 depending on the valence of r 2 . In the formula (11-2), the circular arc of the broken line indicates that a ring structure is formed together with the double bond portion formed by r 3 and r 4 . Further, q 2 represents a hydrogen atom or a monovalent substituent which is a substituent of the ring structure, and it is also indicated that a plurality of ring structures which form a circular arc portion of a broken line in the formula (11-2) can be bonded.
上述式(11-1)~(11-2)中,r1、r2、r3及r4相同或不同, 表示可於r1與r2之間、及r3與r4之間分別形成雙鍵之原子,較佳為碳原子、氮原子、磷原子、硫原子。更佳為碳原子、氮原子。 In the above formulae (11-1) to (11-2), r 1 , r 2 , r 3 and r 4 are the same or different, and represent between r 1 and r 2 and between r 3 and r 4 respectively. The atom forming a double bond is preferably a carbon atom, a nitrogen atom, a phosphorus atom or a sulfur atom. More preferably, it is a carbon atom or a nitrogen atom.
上述式(11-1)中,q1表示氫原子或1價有機基,表示亦 可根據r2之原子價而於r2上鍵結複數個,其表示例如於r2為氮原子之情形時,1個q1鍵結於r2上,於r2為碳原子之情形時,2個q1鍵結於r2上。於複數個q1鍵結於r2上之情形時,q1可全部相同,亦可分別不同。作為上述1價有機基,並無特別限制,可列舉與上述式(2)中之R1及R2相同者。 In the above formula (11-1), q 1 represents a hydrogen atom or a monovalent organic group, and it is also indicated that a plurality of bonds may be bonded to r 2 depending on the valence of r 2 , which means, for example, that r 2 is a nitrogen atom. At the time, one q 1 bond is bonded to r 2 , and when r 2 is a carbon atom, two q 1 bonds are bonded to r 2 . In the case where a plurality of q 1 bonds are attached to r 2 , q 1 may be all the same or different. The monovalent organic group is not particularly limited, and examples thereof are the same as those of R 1 and R 2 in the above formula (2).
該等之中,作為q1,較佳為氫原子;鹵素原子、羧基、羥基、 硫醇基、環氧基、異氰酸酯基、胺基、偶氮基、醯基、烯丙基、硝基、烷氧基羰基、甲醯基、氰基、矽基、錫烷基、硼烷基、膦基、矽基氧基、芳基磺醯氧基、烷基磺醯氧基等反應性基;碳數1~4之直鏈狀或支鏈狀烷基 或經該反應性基取代之碳數1~4之直鏈狀或支鏈狀烷基;碳數1~8之直鏈狀或支鏈狀烷氧基或經該反應性基取代之碳數1~8之直鏈狀或支鏈狀烷氧基;芳基或經該反應性基取代之芳基;低聚芳基或經該反應性基取代之低聚芳基;1價雜環基或經該反應性基取代之1價雜環基;1價低聚雜環基或經該反應性基取代之1價低聚雜環基;烷硫基;芳氧基;芳硫基;芳基烷基;芳基烷氧基;芳基烷硫基;烯基或經該反應性基取代之烯基;炔基或經該反應性基取代之炔基。更佳為氫原子、溴原子、碘原子、硼烷基、炔基、烯基、甲醯基、錫烷基、膦基、芳基或經該反應性基取代之芳基、經該反應性基取代之低聚芳基、經該反應性基取代之1價雜環基、經該反應性基取代之1價低聚雜環基、烯基或經該反應性基取代之烯基、炔基或經該反應性基取代之炔基。 Among these, as q 1 , a hydrogen atom is preferred; a halogen atom, a carboxyl group, a hydroxyl group, a thiol group, an epoxy group, an isocyanate group, an amine group, an azo group, a decyl group, an allyl group, a nitro group, a reactive group such as an alkoxycarbonyl group, a decyl group, a cyano group, a decyl group, a tin alkyl group, a boryl group, a phosphino group, a decyloxy group, an arylsulfonyloxy group or an alkylsulfonyloxy group; a linear or branched alkyl group of 1 to 4 or a linear or branched alkyl group having 1 to 4 carbon atoms substituted by the reactive group; a linear or branched chain having 1 to 8 carbon atoms; Alkoxy or a linear or branched alkoxy group having 1 to 8 carbon atoms substituted with the reactive group; an aryl group or an aryl group substituted with the reactive group; an oligomeric aryl group or a reaction thereof a aryl group-substituted oligoaryl group; a monovalent heterocyclic group or a monovalent heterocyclic group substituted with the reactive group; a monovalent oligo heterocyclic group or a monovalent oligo heterocyclic group substituted with the reactive group ; alkylthio; aryloxy; arylthio; arylalkyl; arylalkoxy; arylalkylthio; alkenyl or alkenyl substituted by the reactive group; alkynyl or via the reactivity a substituted alkynyl group. More preferably, it is a hydrogen atom, a bromine atom, an iodine atom, a boryl group, an alkynyl group, an alkenyl group, a decyl group, a tin alkyl group, a phosphino group, an aryl group or an aryl group substituted with the reactive group, and the reactivity a substituted oligoaryl group, a monovalent heterocyclic group substituted with the reactive group, a monovalent oligo heterocyclic group substituted with the reactive group, an alkenyl group or an alkenyl group or alkyne substituted with the reactive group Or an alkynyl group substituted with the reactive group.
上述式(11-2)中,q2表示氫原子或成為環結構之取代基 的1價取代基,表示亦可於式(11-2)中之形成虛線之圓弧部分之環結構上鍵結複數個。 In the above formula (11-2), q 2 represents a hydrogen atom or a monovalent substituent which is a substituent of the ring structure, and represents a ring structure which can also form a circular arc portion of a broken line in the formula (11-2). Combine several.
即,於q2為氫原子之情形時,表示式(11-2)所表示之結構中具有q2之環結構不具有取代基,於q2為1價取代基之情形時,該環結構具有取代基。於此情形時,該環結構所具有之取代基之個數可為1個,亦可為2個以上。 That is, when q 2 is a hydrogen atom, it means that the ring structure having q 2 in the structure represented by the formula (11-2) does not have a substituent, and when q 2 is a monovalent substituent, the ring structure Has a substituent. In this case, the number of substituents in the ring structure may be one or two or more.
作為上述1價取代基,可列舉與上述式(2)中之X5及X6相同者,該等之中,尤佳為上述式(8-10)所表示之基、萘基、苯基。 The above-mentioned monovalent substituent may be the same as X 5 and X 6 in the above formula (2), and among these, a group represented by the above formula (8-10), a naphthyl group or a phenyl group is particularly preferable. .
於本發明中,進而上述式(2)中之X5及X6均為具有於末
端部具有2個原子以雙鍵連結之結構,且以該2個原子中之一原子與形成虛線之圓弧部分之環結構鍵結的結構之取代基的形態亦又為本發明之較佳實施形態之一。即,形成有機電激發光元件之緩衝層之具有硼原子之有機化合物為含硼聚合物,成為該含硼聚合物之原料之單體成分所含的含硼化
合物為具有硼原子及雙鍵之含硼化合物,且該含硼化合物為特徵在於以下述式(2)表示,且上述X5及X6均具有於末端部具有2個原子以雙鍵連結之結構,且以該2個原子中之一原子與形成虛線之圓弧部分之環結構鍵結的結構之含硼化合物的形態亦又為本發明之較佳實施形態之一:
(式中,虛線之圓弧表示與連結硼原子與氮原子之骨架部分 之一部分一起形成環結構;連結硼原子與氮原子之骨架部分中之虛線部分表示至少1對原子以雙鍵連結,該雙鍵亦可與環結構共軛;自氮原子指向硼原子之箭頭表示氮原子對硼原子進行配位;X5及X6相同或不同,表示成為環結構之取代基之1價取代基,亦可於形成虛線之圓弧部分之環結構上鍵結複數個;R1及R2相同或不同,表示氫原子或1價取代基)。 (wherein, the circular arc of the dotted line indicates a ring structure together with a portion of the skeleton portion linking the boron atom and the nitrogen atom; and the broken line portion in the skeleton portion connecting the boron atom and the nitrogen atom indicates that at least one pair of atoms are linked by a double bond, The double bond may also be conjugated to the ring structure; the arrow from the nitrogen atom to the boron atom indicates that the nitrogen atom coordinates the boron atom; and X 5 and X 6 are the same or different, indicating a monovalent substituent which becomes a substituent of the ring structure, A plurality of ring structures may be bonded to the ring structure forming the arc portion of the broken line; R 1 and R 2 are the same or different and represent a hydrogen atom or a monovalent substituent).
作為上述式(2)中X5及X6均具有於末端部具有2個原子以 雙鍵連結之結構,且以該2個原子中之一原子與形成虛線之圓弧部分之環結構鍵結的結構之含硼化合物,大體而言可列舉:與上述式(2)中形成虛線之圓弧部分之環結構鍵結之原子所構成的上述雙鍵部分未構成環結構的形態、及構成環結構之一部分的形態,具體而言,可列舉下述式(2'-1)~(2'-4)之形態。 In the above formula (2), both of X 5 and X 6 have a structure in which two atoms are bonded at a terminal portion by a double bond, and one of the two atoms is bonded to a ring structure forming a circular arc portion of a broken line. In general, a boron-containing compound having a structure in which the double bond portion which is bonded to a ring structure forming a circular arc portion of a broken line in the above formula (2) does not constitute a ring structure, and a constituent ring Specific examples of the form of the structure include the following formulas (2'-1) to (2'-4).
再者,式(2'-1)~(2'-4)中,連結硼原子與氮原子之骨架部分中之虛線部分、自氮原子指向硼原子之箭頭、及R1及R2與式(1)相同。式(2'-1)中,虛線之圓弧與式(2)相同。式(2'-2)~(2'-4)中,與連結硼原子與氮原子之骨架部分之一部分相連接的虛線之圓弧與式(2)同樣 地表示與連結硼原子與氮原子之骨架部分之一部分一起形成環結構,又,與r5及r6所形成之雙鍵部分及/或r7及r8所形成之雙鍵部分相連接的虛線之圓弧表示與該雙鍵部分一起形成環結構。r5~r8相同或不同,與上述式(11-1)~(11-2)中之r1~r4相同。q3及q4相同或不同,與上述式(11-1)中之q1相同。q5及q6相同或不同,與上述式(11-2)中之q2相同。其中,於含硼化合物為式(2'-4)之形態者之情形時,q5、q6之至少一者為具有反應性基之取代基。 Further, in the formulas (2'-1) to (2'-4), a dotted line in a skeleton portion connecting a boron atom and a nitrogen atom, an arrow pointing from a nitrogen atom to a boron atom, and R 1 and R 2 and a formula (1) Same. In the formula (2'-1), the arc of the broken line is the same as the formula (2). In the formulae (2'-2) to (2'-4), the arc of a broken line connecting a part of the skeleton portion connecting the boron atom and the nitrogen atom is the same as the formula (2), and the boron atom and the nitrogen atom are bonded. One of the skeleton portions forms a ring structure together, and a circular arc of a dotted line formed by the double bond portion formed by r 5 and r 6 and/or the double bond portion formed by r 7 and r 8 represents the double bond The parts together form a ring structure. r 5 to r 8 are the same or different and are the same as r 1 to r 4 in the above formulas (11-1) to (11-2). q 3 and q 4 are the same or different and are the same as q 1 in the above formula (11-1). q 5 and q 6 are the same or different and are the same as q 2 in the above formula (11-2). In the case where the boron-containing compound is in the form of the formula (2'-4), at least one of q 5 and q 6 is a substituent having a reactive group.
該等形態之中,較佳為與上述式(2)中形成虛線之圓弧部 分之環結構鍵結之原子所構成的雙鍵部分一起未構成環結構之形態,或構成環結構之一部分之形態之任一形態。即,較佳為上述式(2'-1)、(2'-4)之形態。 Among these forms, it is preferable to form a circular arc portion with a broken line in the above formula (2). The double bond portion composed of the atoms bonded by the ring structure does not constitute the form of the ring structure or any form of the form of a part of the ring structure. That is, it is preferably in the form of the above formulas (2'-1) and (2'-4).
此種形成有機電激發光元件之緩衝層之具有硼原子之有機化合物為使包含上述式(2'-1)所表示之含硼化合物、或上述式(2'-4)所表示之含硼化合物之單體成分聚合而獲得的含硼聚合物的形態亦又為本發明之較佳 實施形態之一。 The organic compound having a boron atom in the buffer layer forming the organic electroluminescent device is a boron-containing compound represented by the above formula (2'-1) or boron-containing represented by the above formula (2'-4) The form of the boron-containing polymer obtained by polymerizing the monomer component of the compound is also preferred in the present invention. One of the embodiments.
上述式(2'-1)中,虛線之圓弧與式(1)同樣地表示與連 結硼原子與氮原子之骨架部分之一部分一起形成環結構,上述式(2'-1)中,由虛線之圓弧與連結硼原子與氮原子之骨架部分之一部分形成之環結構只要為環狀結構,則並無特別限制,作為式(2'-1)中具有q3之基所鍵結之環,可列舉與式(2)中之X5所鍵結之環相同者。又,作為式(2'-1)中具有q4之基所鍵結之環,可列舉與式(2)中之X6所鍵結之環相同者。 In the above formula (2'-1), the circular arc of the broken line shows a ring structure together with a part of the skeleton portion connecting the boron atom and the nitrogen atom, similarly to the formula (1), and in the above formula (2'-1), The ring structure formed by the arc of the dotted line and the portion of the skeleton portion connecting the boron atom and the nitrogen atom is not particularly limited as long as it has a cyclic structure, and is bonded as a group having q 3 in the formula (2'-1). The ring may be the same as the ring to which X 5 in the formula (2) is bonded. Further, examples of the ring to which the group having q 4 in the formula (2'-1) is bonded are the same as those ringed by X 6 in the formula (2).
上述式(2'-2)~(2'-4)中,與連結硼原子與氮原子之 骨架部分之一部分相連接的虛線之圓弧與式(2)同樣地表示與連結硼原子與氮原子之骨架部分之一部分一起形成環結構,又,與r5及r6所形成之雙鍵部分及/或r7及r8所形成之雙鍵部分相連接的虛線之圓弧表示與該雙鍵部分一起形成環結構。即,表示上述式(2'-2)~(2'-3)所表示之含硼化合物於結構中具有至少3個環結構,且含有連結硼原子與氮原子之骨架部分及1個雙鍵部分作為該環結構之一部分。又,表示上述式(2'-4)所表示之含硼化合物於結構中具有至少4個環結構,且含有連結硼原子與氮原子之骨架部分及2個雙鍵部分作為該環結構之一部分。 In the above formulas (2'-2) to (2'-4), an arc of a broken line connecting a part of a skeleton portion connecting a boron atom and a nitrogen atom is similar to the formula (2), and a boron atom and a nitrogen atom are bonded. One of the skeleton portions of the atom forms a ring structure together, and a double-bonded portion formed by r 5 and r 6 and/or a double-bonded portion formed by r 7 and r 8 represents a double arc The key portions together form a ring structure. That is, the boron-containing compound represented by the above formulas (2'-2) to (2'-3) has at least three ring structures in the structure, and contains a skeleton portion and a double bond connecting a boron atom and a nitrogen atom. Part of it is part of the ring structure. Further, the boron-containing compound represented by the above formula (2'-4) has at least four ring structures in the structure, and contains a skeleton portion linking a boron atom and a nitrogen atom and two double bond portions as a part of the ring structure. .
上述式(2'-2)~(2'-4)中,由與連結硼原子與氮原子 之骨架部分之一部分相連接的虛線之圓弧、與連結硼原子與氮原子之骨架部分之一部分形成的環結構只要為環狀結構,則並無特別限制,作為包含r5及r6所形成之雙鍵部分之基所鍵結之環,可列舉與式(2)中之X5所鍵結之環相同者。又,作為包含r7及r8所形成之雙鍵部分之基所鍵結之環,可列舉與式(2)中之X6所鍵結之環相同者。 In the above formula (2'-2) to (2'-4), an arc of a broken line connected to a portion of a skeleton portion linking a boron atom and a nitrogen atom, and a portion of a skeleton portion connecting a boron atom and a nitrogen atom The ring structure to be formed is not particularly limited as long as it has a cyclic structure, and the ring to which the group including the double bond portion formed by r 5 and r 6 is bonded may be exemplified by the bond of X 5 in the formula (2). The ring is the same. Further, examples of the ring to which the group including the double bond portion formed by r 7 and r 8 are bonded may be the same as the ring to which X 6 is bonded in the formula (2).
又,上述式(2'-2)~(2'-4)中,作為由與r5及r6所形 成之雙鍵部分及/或r7及r8所形成之雙鍵部分相連接的虛線之圓弧與該雙鍵部分形成的環結構,例如可列舉與式(2)中之X5所鍵結之環、及式(2) 中之X6所鍵結之環相同者。再者,上述式(2'-4)中,由與r5及r6所形成之雙鍵部分及r7及r8所形成之雙鍵部分相連接的虛線之圓弧與該雙鍵部分形成的環結構存在至少2個,其等可相同亦可不同。 Further, in the above formulas (2'-2) to (2'-4), the double bond portion formed by r 5 and r 6 and/or the double bond portion formed by r 7 and r 8 are connected. The ring structure formed by the circular arc of the dotted line and the double bond portion may be, for example, the same as the ring bonded by X 5 in the formula (2) and the ring bonded by X 6 in the formula (2). Further, in the above formula (2'-4), an arc of a dotted line connected to a double bond portion formed by r 5 and r 6 and a double bond portion formed by r 7 and r 8 and the double bond portion There are at least two ring structures formed, and the like may be the same or different.
上述式(2)所表示之含硼化合物之製造方法並無特別限制, 例如可藉由日本特開2011-184430號公報中所記載之方法而製造。 The method for producing the boron-containing compound represented by the above formula (2) is not particularly limited. For example, it can be produced by the method described in JP-A-2011-184430.
使包含上述式(2)所表示之含硼化合物之單體成分聚合而
獲得的含硼聚合物具有使式(2)中之X5、X6、R1及R2之至少2個基聚縮合或使至少1個基聚合而形成的重複單元。即,為具有下述式(12)所表示之重複單元之結構的含硼聚合物:
(式中,虛線之圓弧、連結硼原子與氮原子之骨架部分中之 虛線部分、自氮原子指向硼原子之箭頭與式(2)相同;X5'、X6'、R1'及R2'分別表示與式(2)之X5、X6、R1及R2相同之基、2價基、3價基、或直接鍵)。上述式(12)表示X5'、X6'、R1'及R2'中之任一者以上作為聚合物之主鏈之一部分而形成鍵。於上述式(2)中之X5、X6、R1及R2中之至少2個基聚縮合而形成含硼聚合物之情形時,上述式(12)中之X5'、X6'、R1'及R2'中之至少2個為2價基、或直接鍵。於上述式(2)中之X5、X6、R1及R2中之至少1個基單獨聚合而形成含硼聚合物之情形時,上述式(12)中之X5'、X6'、R1'及R2'中之至少1個為3價基、或直接鍵。 (wherein, the arc of the dotted line, the dotted line in the skeleton portion connecting the boron atom and the nitrogen atom, and the arrow pointing from the nitrogen atom to the boron atom are the same as in the formula (2); X 5 ' , X 6 ' , R 1 ' and R 2 'is the same group as the X 5 , X 6 , R 1 and R 2 of the formula (2), a divalent group, a trivalent group or a direct bond, respectively. The above formula (12) represents that any one of X 5 ' , X 6 ' , R 1 ' and R 2 ' is a part of the main chain of the polymer to form a bond. When at least two of X 5 , X 6 , R 1 and R 2 in the above formula (2) are polycondensed to form a boron-containing polymer, X 5 ' and X 6 in the above formula (12) At least two of ' , R 1 ' and R 2' are a divalent group or a direct bond. When at least one of X 5 , X 6 , R 1 and R 2 in the above formula (2) is polymerized alone to form a boron-containing polymer, X 5 ' and X 6 in the above formula (12) At least one of ' , R 1 ' and R 2' is a trivalent group or a direct bond.
具有上述式(12)所表示之重複單元之含硼聚合物可為由上述式(12) 所表示之1種結構所構成者,亦可為包含上述式(12)所表示之2種以上之結構者。於為包含上述式(12)所表示之2種以上之結構者之情形時,該2種以上之結構可為無規聚合物,可為嵌段聚合物,亦可為接枝聚合物等。 又,亦可為高分子主鏈上存在分支且存在3個以上末端部之情況或樹枝狀聚合物。 The boron-containing polymer having the repeating unit represented by the above formula (12) may be the above formula (12) The one of the structures shown may be one or more of the structures including the above formula (12). When two or more types of structures represented by the above formula (12) are included, the two or more types of structures may be a random polymer, a block polymer, or a graft polymer. Further, it may be a case where a branch is present in the polymer main chain and three or more terminal portions are present or a dendrimer.
具有上述式(12)所表示之重複單元之結構的含硼聚合物 中,較佳為上述式(12)中之R1'及R2'分別為與式(2)中之R1及R2相同之基。並且,進而較佳為上述式(12)中之R1'及R2'為碳數1~30之直鏈狀或支鏈狀烴基、碳數3~30之脂環式烴基。 Boron-containing polymer having structural repeating units represented by the above formula (12), preferably in the above formula (12) R 1 'and R 2' are of the formula R (2) and R 1 in the 2 the same base. Further, it is preferable that R 1 ' and R 2 ' in the above formula (12) are a linear or branched hydrocarbon group having 1 to 30 carbon atoms and an alicyclic hydrocarbon group having 3 to 30 carbon atoms.
即,形成有機電激發光元件之緩衝層之具有硼原子之有機化合物為使包含式(2)所表示之含硼化合物之單體成分聚合而獲得的含硼聚合物,且式(2)中之R1及R2相同或不同,為碳數1~30之直鏈狀或支鏈狀烴基、或碳數3~30之脂環式烴基的形態亦又為本發明之較佳實施形態之一。 That is, the organic compound having a boron atom forming the buffer layer of the organic electroluminescent device is a boron-containing polymer obtained by polymerizing a monomer component containing the boron-containing compound represented by the formula (2), and is in the formula (2) R 1 and R 2 are the same or different, and the form of a linear or branched hydrocarbon group having 1 to 30 carbon atoms or an alicyclic hydrocarbon group having 3 to 30 carbon atoms is also a preferred embodiment of the present invention. One.
上述式(12)所表示之重複單元之結構之具體例中,作為藉由聚縮合而獲得之結構,例如有如以下之式(13-1)~(13-6)之結構。該等之中,較佳為(13-1)、(13-6)之結構。更佳為(13-1)之結構。即,由具有式(2)所表示之結構且式(2)中之X5及X6為具有反應性基之取代基的含硼化合物獲得的含硼聚合物亦又為本發明之一。 In the specific example of the structure of the repeating unit represented by the above formula (12), the structure obtained by the polycondensation is, for example, a structure of the following formulas (13-1) to (13-6). Among these, the structures of (13-1) and (13-6) are preferable. More preferably, the structure of (13-1). That is, the boron-containing polymer obtained from the boron-containing compound having the structure represented by the formula (2) and wherein X 5 and X 6 in the formula (2) are substituents having a reactive group is also one of the inventions.
作為上述可進行聚縮合之反應性基之組合,只要為可進行聚 合者,則並無特別限制,例如可列舉:羧基與羥基、羧基與硫醇基、羧基與胺基、羧酸酯基與胺基、羧基與環氧基、羥基與環氧基、硫醇基與環氧基、胺基與環氧基、異氰酸酯基與羥基、異氰酸酯基與硫醇基、異氰酸酯基與胺基、羥基與鹵素原子、硫醇基與鹵素原子、硼烷基與鹵素原子、錫烷基與鹵素原子、醛基與鏻甲基、乙烯基與鹵素原子、醛基與膦酸酯甲基、鹵烷基與鹵烷基、鋶甲基與鋶甲基、醛基與乙腈基、醛基與醛基、鹵素原子與硼烷基、鹵素原子與鹵化鎂、鹵素原子與鹵素原子等。 As a combination of the above reactive groups capable of undergoing polycondensation, as long as it is capable of being polymerized The combination is not particularly limited, and examples thereof include a carboxyl group and a hydroxyl group, a carboxyl group and a thiol group, a carboxyl group and an amine group, a carboxylate group and an amine group, a carboxyl group and an epoxy group, a hydroxyl group and an epoxy group, and a thiol group. And epoxy groups, amine groups and epoxy groups, isocyanate groups and hydroxyl groups, isocyanate groups and thiol groups, isocyanate groups and amine groups, hydroxyl groups and halogen atoms, thiol groups and halogen atoms, borane groups and halogen atoms, Tin alkyl and halogen atoms, aldehyde and methyl, vinyl and halogen atoms, aldehyde and phosphonate methyl, haloalkyl and haloalkyl, fluorenylmethyl and fluorenylmethyl, aldehyde and acetonitrile An aldehyde group and an aldehyde group, a halogen atom and a boron alkyl group, a halogen atom and a magnesium halide, a halogen atom and a halogen atom, and the like.
該等之中,較佳為鹵素原子與硼烷基之組合、鹵素原子與鹵素原子之組合。 Among these, a combination of a halogen atom and a borane group, and a combination of a halogen atom and a halogen atom are preferred.
於上述式(2)中之X5、X6、R1及R2中之至少2個基進行聚 縮合而形成含硼聚合物之情形時,上述式(12)中之X5'、X6'、R1'及R2'中之至少2個表示2價基、或直接鍵,該2價基表示不會藉由具有反應性基之取代基間之聚縮合反應而脫離的殘基。於具有成為上述可進行聚縮合之反應性基之組合之反應性基的取代基進行聚縮合反應之情形時,有殘基殘留於聚合物中之情況、及未殘留之情形,於前者之情形時,X5'、X6'、R1'及R2'中至少一者表示不會藉由具有反應性基之取代基間之聚縮合反應而脫離之殘基,於後者之情形時,X5'、X6'、R1'及R2'中至少一者表示直接鍵。 When at least two of X 5 , X 6 , R 1 and R 2 in the above formula (2) are polycondensed to form a boron-containing polymer, X 5 ' and X in the above formula (12) At least two of 6' , R 1 ' and R 2' represent a divalent group or a direct bond, and the divalent group represents a residue which is not desorbed by a polycondensation reaction between substituents having a reactive group. . In the case where a substituent having a reactive group which is a combination of the above-mentioned reactive groups capable of undergoing polycondensation is subjected to a polycondensation reaction, there are cases in which residues remain in the polymer and remain in the case of the former. When at least one of X 5 ' , X 6 ' , R 1 ' and R 2 ' represents a residue which is not desorbed by a polycondensation reaction between substituents having a reactive group, in the latter case, At least one of X 5 ' , X 6 ' , R 1 ' and R 2 ' represents a direct bond.
又,於上述式(12)所表示之重複單元2個以上連續之情形時,於2個重複單元之間如例如-X5'-X6'-般形成X5'、X6'、R1'及R2'中之2個連續之鍵,於此情形時,該2個中之任一者為直接鍵。 Further, when two or more repeating units represented by the above formula (12) are continuous, X 5 ' , X 6 ' , and R are formed between two repeating units such as, for example, -X 5' -X 6 ' Two consecutive keys of 1' and R 2' , in which case either of the two is a direct key.
作為具有成為上述可進行聚縮合之反應性基之組合之反應 性基的取代基進行聚縮合反應且殘基殘存於聚合物中之情形之具體例,可列舉具有羧基之取代基與具有羥基之取代基之組合。例如於-CH2COOH基與-CH2CH2OH基進行聚縮合反應之情形時,殘存於聚合物中之殘基成為- CH2(CO)-O-CH2CH2-基。又,例如於如-COOH基與-OH基之反應般,具有反應性基之取代基僅由反應性基構成之情形時,殘存於聚合物中之殘基成為-(CO)-O-基。 Specific examples of the case where a substituent having a reactive group which is a combination of the above-mentioned reactive group capable of undergoing polycondensation is subjected to a polycondensation reaction and a residue remains in the polymer include a substituent having a carboxyl group and a hydroxyl group. A combination of substituents. For example, when a -CH 2 COOH group is subjected to a polycondensation reaction with a -CH 2 CH 2 OH group, the residue remaining in the polymer becomes a -CH 2 (CO)-O-CH 2 CH 2 - group. Further, for example, when a substituent having a reactive group is composed only of a reactive group as in the reaction of a -COOH group and an -OH group, the residue remaining in the polymer becomes a -(CO)-O- group. .
又,作為上述可進行聚縮合之反應性基之組合進行聚縮合反應且殘基不殘存於聚合物中之情形之具體例,可列舉:硼烷基與鹵素原子、鹵素原子與鹵素原子之組合。 Further, specific examples of the case where the combination of the reactive groups capable of undergoing polycondensation is subjected to a polycondensation reaction and the residue does not remain in the polymer include a combination of a boryl group and a halogen atom, a halogen atom and a halogen atom. .
上述式(12)所表示之重複單元之結構之具體例中,作為上 述式(2)中之X5、X6、R1及R2中之至少1個基單獨聚合而獲得的結構,例如X6進行聚合而獲得之結構為如下述式(14)之結構。如此,於式(2)中之X6為於結構中具有單獨聚合而獲得之反應性基的取代基之情形時,成為X6'為3價基或直接鍵之結構之重複單元。同樣地,於式(2)中之X5、X6、R1及R2中之任一者為於結構中具有單獨聚合而獲得之反應性基的取代基之情形時,分別成為X5'、X6'、R1'及R2'為3價基或直接鍵之結構之重複單元。 In a specific example of the structure of the repeating unit represented by the above formula (12), a structure obtained by polymerizing at least one of X 5 , X 6 , R 1 and R 2 in the above formula (2), for example, is, for example, The structure obtained by the polymerization of X 6 is a structure of the following formula (14). Thus, when X 6 in the formula (2) is a substituent having a reactive group obtained by polymerization alone in the structure, a repeating unit having a structure in which X 6 ' is a trivalent group or a direct bond is obtained. Similarly, in the case where any of X 5 , X 6 , R 1 and R 2 in the formula (2) is a substituent having a reactive group obtained by polymerization alone in the structure, it becomes X 5 respectively. ' , X 6' , R 1 ' and R 2 ' are repeating units of a structure of a trivalent group or a direct bond.
作為上述可單獨聚合之反應性基,可列舉:3,5-二溴苯基、 烯基、炔基、環氧基、鹵素原子等。藉由使上述式(2)之含硼化合物具有至少1個該等基之任一者,而上述式(2)之含硼化合物可單獨聚合。該等之中,較佳為烯基、環氧基、3,5-二溴苯基。 Examples of the reactive group which can be polymerized alone include 3,5-dibromophenyl group. An alkenyl group, an alkynyl group, an epoxy group, a halogen atom or the like. The boron-containing compound of the above formula (2) can be polymerized by allowing the boron-containing compound of the above formula (2) to have at least one of these groups. Among these, an alkenyl group, an epoxy group, and a 3,5-dibromophenyl group are preferable.
上述式(2)中之X5、X6、R1及R2中,進行聚縮合之基只要 為結構中具有上述可進行聚縮合之反應性基的取代基即可。同樣,單獨進行聚合之基只要為結構中具有上述可單獨聚合之反應性基的取代基即可。 作為此種取代基,可列舉:碳數1~4之直鏈狀或支鏈狀烷基、碳數3~7之環狀烷基、碳數1~8之直鏈狀或支鏈狀烷氧基、芳基或雜環基等任一基之氫原子經上述可進行聚縮合之反應性基或可單獨聚合之反應性基取代的基。該等之中,較佳為苯乙烯基、3,5-二溴苯基。 In the X 5 , X 6 , R 1 and R 2 in the above formula (2), the group to be subjected to polycondensation may be a substituent having a reactive group capable of undergoing polycondensation in the structure. Similarly, the group to be polymerized alone may be a substituent having the above-mentioned separately polymerizable reactive group in the structure. Examples of such a substituent include a linear or branched alkyl group having 1 to 4 carbon atoms, a cyclic alkyl group having 3 to 7 carbon atoms, and a linear or branched alkyl group having 1 to 8 carbon atoms. The hydrogen atom of any of the oxygen group, the aryl group or the heterocyclic group may be substituted with the above-mentioned reactive group capable of undergoing polycondensation or a reactive group which may be polymerized alone. Among these, a styryl group and a 3,5-dibromophenyl group are preferable.
本發明之含硼聚合物只要為由包含上述式(2)所表示之含 硼化合物之單體成分獲得者,則單體成分中亦可包含其他單體。 The boron-containing polymer of the present invention is contained as long as it is represented by the above formula (2). If the monomer component of the boron compound is obtained, other monomer may be included in the monomer component.
即,使式(2)所表示之含硼化合物與下述式(15)所表示之其他單體進行聚合而形成的含硼聚合物亦又包含於本發明中之含硼聚合物中: X7-A-X8 (15) That is, the boron-containing polymer formed by polymerizing the boron-containing compound represented by the formula (2) and another monomer represented by the following formula (15) is also included in the boron-containing polymer of the present invention: X 7 -AX 8 (15)
(式中,A表示2價基;X7及X8相同或不同,表示氫原子或1價取代基,X7及X8之至少1個基為具有反應性基之取代基)。 (In the formula, A represents a divalent group; and X 7 and X 8 are the same or different and each represents a hydrogen atom or a monovalent substituent, and at least one of X 7 and X 8 is a substituent having a reactive group).
上述式(15)中之A只要為2價基,則並無特別限制,若以符合其結構之化合物名進行列舉,則例如可列舉:苯、萘、蒽、菲、、紅螢烯、芘、苝、茚、薁、金剛烷、茀、茀酮、二苯并呋喃、咔唑、二苯并噻吩、呋喃、吡咯、吡咯啉、吡咯啶、噻吩、二氧雜環戊烷(dioxolane)、吡唑、吡唑啉、吡唑啶、咪唑、唑、噻唑、二唑、三唑、噻二唑、吡喃、吡啶、哌啶、二烷、啉、嗒、嘧啶、吡、哌、三、三噻烷、降莰烯、苯并呋喃、吲哚、苯并噻吩、苯并咪唑、苯并唑、苯并噻唑、苯并噻二唑、苯并二唑、嘌呤、喹啉、異喹啉、香豆素、啉、喹啉、吖啶、啡啉、酚噻嗪、黃酮、三苯基胺、乙醯丙酮、二苯甲醯甲烷、吡啶甲酸、矽羅、卟啉、銥等金屬配位化合物、或其等具有取代基之衍生物、包含其等衍生物之結構之聚合物或低聚物等。 The A in the above formula (15) is not particularly limited as long as it is a divalent group, and examples thereof include benzene, naphthalene, anthracene, phenanthrene, and the like. , ruthenium, anthracene, anthracene, anthracene, anthracene, adamantane, anthracene, anthrone, dibenzofuran, oxazole, dibenzothiophene, furan, pyrrole, pyrroline, pyrrolidine, thiophene, dioxane Dioxolane, pyrazole, pyrazoline, pyrazolidine, imidazole, Oxazole, thiazole, Diazole, triazole, thiadiazole, pyran, pyridine, piperidine, two alkyl, Porphyrin Pyrimidine, pyridyl Piper ,three , trithiane, norbornene, benzofuran, anthracene, benzothiophene, benzimidazole, benzo Azole, benzothiazole, benzothiadiazole, benzo Diazole, hydrazine, quinoline, isoquinoline, coumarin, Porphyrin a metal complex such as a porphyrin, an acridine, a phenanthroline, a phenothiazine, a flavonoid, a triphenylamine, an acetoacetone, a benzhydrazine, a picolinic acid, a pyrene, a porphyrin or a hydrazine, or the like a derivative, a polymer or oligomer containing a structure of a derivative thereof, and the like.
再者,作為上述取代基,可使用與上述R1及R2中之取代基相同者。 Further, as the above substituent, the same substituent as in the above R 1 and R 2 can be used.
作為上述A,除上述者以外,例如亦可列舉下述式(16-1)~(16-4)之結構。 As the above-mentioned A, in addition to the above, for example, the structures of the following formulas (16-1) to (16-4) may be mentioned.
(式中,Ar1、Ar2、Ar3相同或不同,表示伸芳基、2價雜環基或具有金屬錯合物結構之2價基;Z1表示-C≡C-、-N(Q3)-、-(SiQ4Q5)b-、或直接鍵;Z2表示-CQ1=CQ2-、-C≡C-、-N(Q3)-、-(SiQ4Q5)b-、或直接鍵;Q1及Q2相同或不同,表示氫原子、烷基、芳基、1價雜環基、羧基、烷氧基羰基、芳氧基羰基、芳基烷氧基羰基、雜芳氧基羰基、或氰基;Q3、Q4及Q5相同或不同,表示氫原子、烷基、芳基、1價雜環基、或芳基烷基;a表示0~1之整數;b表示1~12之整數) (wherein, Ar1, Ar2, and Ar3 are the same or different and each represents an extended aryl group, a divalent heterocyclic group or a divalent group having a metal complex structure; and Z1 represents -C≡C-, -N(Q3)-, -(SiQ4Q5)b-, or a direct bond; Z2 represents -CQ1=CQ2-, -C≡C-, -N(Q3)-, -(SiQ4Q5)b-, or a direct bond; Q1 and Q2 are the same or different, Represents a hydrogen atom, an alkyl group, an aryl group, a monovalent heterocyclic group, a carboxyl group, an alkoxycarbonyl group, an aryloxycarbonyl group, an arylalkoxycarbonyl group, a heteroaryloxycarbonyl group, or a cyano group; Q3, Q4, and Q5 The same or different, representing a hydrogen atom, an alkyl group, an aryl group, a monovalent heterocyclic group, or an arylalkyl group; a represents an integer of 0 to 1; b represents an integer of 1 to 12)
上述所謂伸芳基,係指自芳香族烴中去除2個氫原子所得之原子團,構成環之碳數通常為6~60左右,較佳為6~20。作為該芳香族烴,亦包含具有縮合環者、獨立之苯環或縮合環2個以上直接鍵結或經由伸乙烯基等基鍵結而成者。 The above-mentioned "aryl group" means an atomic group obtained by removing two hydrogen atoms from an aromatic hydrocarbon, and the carbon number of the ring is usually from about 6 to 60, preferably from 6 to 20. The aromatic hydrocarbon also includes a condensed ring, a benzene ring or a condensed ring in which two or more direct bonds are bonded, or a group such as a vinyl group is bonded.
作為上述伸芳基,例如可列舉下述式(17-1)~(17-23)所表示之基等。該等之中,較佳為伸苯基、伸聯苯基、茀-二基、茋-二基。 Examples of the above-mentioned extended aryl group include a group represented by the following formulas (17-1) to (17-23). Among these, a phenyl group, a biphenyl group, a fluorene-diyl group, and a fluorenyl-diyl group are preferred.
再者,式(17-1)~(17-23)中,R相同或不同,表示氫原子、鹵素原子、烷基、烷氧基、烷硫基、芳基、芳氧基、芳硫基、芳基烷基、芳基烷氧基、芳基烷硫基、醯基、醯氧基、醯胺基、醯亞胺基、亞胺殘基、胺基、經取代之胺基、經取代之矽基、經取代之矽基氧基、經取代之矽烷 硫基、經取代之矽基胺基、1價雜環基、雜芳氧基、雜芳硫基、芳基烯基、芳基乙炔基、羧基、烷氧基羰基、芳氧基羰基、芳基烷氧基羰基、雜芳氧基羰基或氰基。 Further, in the formulae (17-1) to (17-23), R is the same or different and represents a hydrogen atom, a halogen atom, an alkyl group, an alkoxy group, an alkylthio group, an aryl group, an aryloxy group, or an arylthio group. , arylalkyl, arylalkoxy, arylalkylthio, decyl, decyloxy, decylamino, quinone imine, imine residue, amine, substituted amine, substituted Mercapto group, substituted decyloxy group, substituted decane Thio group, substituted mercaptoamine group, monovalent heterocyclic group, heteroaryloxy group, heteroarylthio group, arylalkenyl group, arylethynyl group, carboxyl group, alkoxycarbonyl group, aryloxycarbonyl group, aromatic Alkoxycarbonyl, heteroaryloxycarbonyl or cyano.
式(17-1)中,如x-y所表示之線般與環結構交叉而標附之線表示環結構與被鍵結部分中之原子直接鍵結。即,表示與構成式(17-1)中標附有x-y所表示之線之環之任一碳原子直接鍵結,該環結構中之鍵結位置並無限定。式(17-10)中,如z-所表示之線般,環結構之頂點上所標附之線表示於該位置上環結構與被鍵結部分中之原子直接鍵結。又,與環結構交叉而標附之R上所標附之線表示R相對於該環結構可鍵結1個,亦可鍵結複數個,其鍵結位置亦無限定。 In the formula (17-1), a line intersecting the ring structure as indicated by x-y and a line attached indicates that the ring structure is directly bonded to an atom in the bonded portion. That is, it means that it is directly bonded to any carbon atom of the ring of the line represented by x-y in the formula (17-1), and the bonding position in the ring structure is not limited. In the formula (17-10), as indicated by the line z-, the line marked on the apex of the ring structure indicates that the ring structure is directly bonded to the atom in the bonded portion at this position. Further, the line marked with R attached to the ring structure indicates that R can be bonded to the ring structure, and a plurality of bonds can be bonded, and the bonding position is not limited.
又,式(17-1)~(17-10)及(17-15)~(17-20)中,碳原子亦可被取代成氮原子、氧原子或硫原子,氫原子亦可被取代成氟原子。 Further, in the formulae (17-1) to (17-10) and (17-15) to (17-20), a carbon atom may be substituted with a nitrogen atom, an oxygen atom or a sulfur atom, and a hydrogen atom may be substituted. A fluorine atom.
上述所謂2價雜環基,係指自雜環化合物中去除2個氫原子 所得之殘餘之原子團,構成環之碳數通常為3~60左右。作為該雜環化合物,具有環式結構之有機化合物中亦包含構成環之元素不僅為碳原子,而且環內亦包含氧、硫、氮、磷、硼、砷等雜原子者。 The above-mentioned divalent heterocyclic group means that two hydrogen atoms are removed from the heterocyclic compound. The residual atomic group obtained usually has a carbon number of about 3 to 60. As the heterocyclic compound, the organic compound having a cyclic structure also includes not only a carbon atom but also a hetero atom such as oxygen, sulfur, nitrogen, phosphorus, boron or arsenic in the ring.
作為上述2價雜環基,例如可列舉下述式(18-1)~(18-38)所表示之雜環基等。 Examples of the above-mentioned divalent heterocyclic group include a heterocyclic group represented by the following formulas (18-1) to (18-38).
再者,式(18-1)~(18-38)中,R與上述伸芳基所具有之R相同。 Y表示O、S、SO、SO2、Se、或Te。關於與環結構交叉而標附之線、環結構之頂點上所標附之線、與環結構交叉而標附之R上所標附之線,與式(17-1)~(17-23)相同。 Further, in the formulae (18-1) to (18-38), R is the same as R of the above-mentioned extended aryl group. Y represents O, S, SO, SO 2 , Se, or Te. Regarding the line attached to the ring structure, the line marked on the apex of the ring structure, the line marked on the R attached to the ring structure, and the formula (17-1)~(17-23 )the same.
又,式(18-1)~(18-38)中,碳原子亦可被取代成氮原子、氧原子或硫原子,氫原子亦可被取代成氟原子。 Further, in the formulae (18-1) to (18-38), a carbon atom may be substituted with a nitrogen atom, an oxygen atom or a sulfur atom, and a hydrogen atom may be substituted with a fluorine atom.
上述所謂具有金屬錯合物結構之2價基,係指自具有有機配位子之金屬錯合物之有機配位子中去除2個氫原子所得之殘餘之2價基。該有機配位子之碳數通常為4~60左右,例如可列舉:8-羥基喹啉及其衍生物、苯并羥基喹啉及其衍生物、2-苯基-吡啶及其衍生物、2-苯基-苯并噻唑及其衍生物、2-苯基-苯并唑及其衍生物、卟啉及其衍生物等。 The above-mentioned divalent group having a metal complex structure means a residual divalent group obtained by removing two hydrogen atoms from an organic ligand of a metal complex having an organic ligand. The carbon number of the organic ligand is usually about 4 to 60, and examples thereof include 8-hydroxyquinoline and derivatives thereof, benzoquinolinol and derivatives thereof, 2-phenyl-pyridine and derivatives thereof, 2-phenyl-benzothiazole and its derivatives, 2-phenyl-benzo Oxazole and its derivatives, porphyrins and their derivatives.
作為上述金屬錯合物之中心金屬,例如可列舉:鋁、鋅、鈹、 銥、鉑、金、銪、鋱等,作為上述具有有機配位子之金屬錯合物,可列舉低分子之螢光材料,作為磷光材料,可列舉公知之金屬錯合物、三重態發光錯合物等。 Examples of the center metal of the above metal complex include aluminum, zinc, and antimony. Examples of the metal complex having an organic ligand include ruthenium, platinum, gold, rhodium, iridium, etc., and a low molecular fluorescent material. Examples of the phosphorescent material include a known metal complex and triplet luminescence. Compounds, etc.
作為上述具有金屬錯合物結構之2價基,具體而言,例如可 列舉下述式(19-1)~(19-7)所表示之基。 As the above-mentioned divalent group having a metal complex structure, specifically, for example, The groups represented by the following formulas (19-1) to (19-7) are listed.
再者,式(19-1)~(19-7)中,R與上述伸芳基所具有之R相同。 關於環結構之頂點上所標附之線,與式(17-1)~(17-23)同樣地表示直接鍵結。 Further, in the formulae (19-1) to (19-7), R is the same as R of the above-mentioned extended aryl group. The line attached to the apex of the ring structure indicates direct bonding as in the equations (17-1) to (17-23).
又,式(19-1)~(19-7)中,碳原子亦可被取代成氮原子、氧原子或硫原子,氫原子亦可被取代成氟原子。 Further, in the formulae (19-1) to (19-7), a carbon atom may be substituted with a nitrogen atom, an oxygen atom or a sulfur atom, and a hydrogen atom may be substituted with a fluorine atom.
又,作為A之結構,亦可列舉如下述式(16-5)之結構。 Further, as the structure of A, a structure of the following formula (16-5) can also be mentioned.
(式中,Ar4、Ar5、Ar6及Ar7相同或不同,表示伸芳基或 2價雜環基;Ar8、Ar9及Ar10相同或不同,表示芳基或1價雜環基;o及p相同或不同,表示0或1,且0≦o+p≦1) (wherein Ar4, Ar5, Ar6 and Ar7 are the same or different and represent an aryl group or a divalent heterocyclic group; Ar8, Ar9 and Ar10 are the same or different and represent an aryl group or a monovalent heterocyclic group; o and p are the same or different and represent 0 or 1, and 0≦o+p≦1)
作為上述式(16-5)所表示之結構之具體例,可列舉下述式(20-1)~(20-8)所表示之結構。 Specific examples of the structure represented by the above formula (16-5) include the structures represented by the following formulas (20-1) to (20-8).
再者,式(20-1)~(20-8)中,R與上述伸芳基所具有 之R相同。關於環結構之頂點上所標附之線,與式(17-1)~(17-23)同樣地表示直接鍵結。上述式(20-1)~(20-8)中,1個結構式中具有複數個R,其等可相同,亦可為不同之基。為了提高對溶劑之溶解性,較佳為具有1個以上氫原子以外之基,又,較佳為包含取代基在內之結構之形狀之對稱性較小。進而,上述式(20-1)~(20-8)中,於R於其一部分中包含芳基或雜環基之情形時,其等可進而具有1個以上之取代基。又,於R包含烷基鏈之取代基中,其等可為直鏈、分支或環狀之任一者或其等之組合,作為非直鏈之情況,例如可列舉:異戊基、2-乙基己基、3,7-二甲基辛基、環己基、4-C1~C12烷基環己基等。為了提高本發明之含硼之共聚物對溶劑之溶解性,較佳為1個以上包含環狀或具有分支之烷基鏈。 Furthermore, in the formulae (20-1) to (20-8), R and the above-mentioned extended aryl group have The same R. The line attached to the apex of the ring structure indicates direct bonding as in the equations (17-1) to (17-23). In the above formulae (20-1) to (20-8), one structural formula has a plurality of R's, and the like may be the same or different bases. In order to improve the solubility in a solvent, it is preferable to have a group other than one or more hydrogen atoms, and it is preferable that the shape of the structure including the substituent has a small symmetry. Further, in the above formulae (20-1) to (20-8), when R contains an aryl group or a heterocyclic group in a part thereof, the one or more substituents may further have one or more substituents. Further, in the substituent in which R includes an alkyl chain, the substituent may be any of a straight chain, a branch or a ring, or a combination thereof, and examples of the case of a non-linear chain include, for example, isopentyl group, and Ethylhexyl, 3,7-dimethyloctyl, cyclohexyl, 4-C1-C12 alkylcyclohexyl, and the like. In order to improve the solubility of the boron-containing copolymer of the present invention in a solvent, it is preferred that one or more alkyl chains having a cyclic or branched group are contained.
又,複數個R亦可連結而形成環。進而,於R為包含烷基鏈之基之情 形時,該烷基鏈亦可經包含雜原子之基中斷。作為該雜原子,可列舉:氧原子、硫原子、氮原子等。 Further, a plurality of Rs may be joined to form a ring. Further, in the case where R is a group containing an alkyl chain In the form, the alkyl chain may also be interrupted via a group containing a hetero atom. Examples of the hetero atom include an oxygen atom, a sulfur atom, and a nitrogen atom.
作為上述A之結構,上述者中,較佳為式(16-5)、式(17-9)、式(18-16)、式(18-28)。 As the structure of the above A, among the above, the formula (16-5), the formula (17-9), the formula (18-16), and the formula (18-28) are preferable.
上述含硼聚合物為具有使式(2)中之X5、X6、R1及R2之至少1個基與式(15)中之X7及X8之至少1個基聚合而形成之重複單元者。即,具有下述式(21)所表示之重複單元之結構的含硼聚合物亦又包含於本發明中之含硼聚合物中:
(式中,虛線之圓弧、連結硼原子與氮原子之骨架部分中之虛線部分、自氮原子指向硼原子之箭頭與式(2)相同;X5'、X6'、R1'及R2'與式(12)相同;A相同或不同,表示2價基;X7'及X8'分別表示與式(15)之X7及X8相同之基、2價基、3價基、或直接鍵)。 (wherein, the arc of the dotted line, the dotted line in the skeleton portion connecting the boron atom and the nitrogen atom, and the arrow pointing from the nitrogen atom to the boron atom are the same as in the formula (2); X 5 ' , X 6 ' , R 1 ' and R 2 'is the same as formula (12); A is the same or different and represents a divalent group; X 7 ' and X 8 ' respectively represent the same group as X 7 and X 8 of formula (15), a divalent group, and a trivalent group. Base, or direct key).
上述式(21)表示X5'、X6'、R1'及R2'中之任一者以上且X7'及X8'中之任一者以上作為聚合物之主鏈之一部分而形成鍵。 The above formula (21) represents any one of X 5 ' , X 6 ' , R 1 ' and R 2 ' and any one of X 7 ' and X 8 ' is a part of the main chain of the polymer. Form a bond.
具有上述式(21)所表示之重複單元的含硼聚合物中,源自上述式(2)之重複單元、源自上述式(15)之重複單元可為無規聚合物,可為嵌段聚合物,亦可為接枝聚合物。又,亦可為高分子主鏈上存在分支且存在3個以上末端部之情況或樹枝狀聚合物。又,亦可為使上述式(2)所表示之含硼化合物與上述式(15)所表示之化合物進行聚縮合而形成之聚合物。 In the boron-containing polymer having the repeating unit represented by the above formula (21), the repeating unit derived from the above formula (2) and the repeating unit derived from the above formula (15) may be a random polymer and may be a block. The polymer may also be a graft polymer. Further, it may be a case where a branch is present in the polymer main chain and three or more terminal portions are present or a dendrimer. Further, a polymer obtained by polycondensing a boron-containing compound represented by the above formula (2) and a compound represented by the above formula (15) may be used.
又,具有上述式(21)所表示之重複單元的含硼聚合物可為分別含有1種源自上述式(2)之重複單元、源自上述式(15)之重複單元者,亦可為含有2種以上者。於為含有2種以上之重複單元者之情形時,該2種以上之結構可為無規聚合物,可為嵌段聚合物,亦可為接枝聚合物。又,亦可為高分子主鏈上存在分支且存在3個以上末端部之情況或樹枝狀聚合物。 Further, the boron-containing polymer having the repeating unit represented by the above formula (21) may be one containing one repeating unit derived from the above formula (2) and the repeating unit derived from the above formula (15), or may be Contains 2 or more types. In the case where two or more types of repeating units are contained, the two or more kinds of structures may be a random polymer, may be a block polymer, or may be a graft polymer. Further, it may be a case where a branch is present in the polymer main chain and three or more terminal portions are present or a dendrimer.
作為上述式(21)所表示之含硼聚合物,有(i)上述式(2) 中之X5、X6、R1及R2中之任兩者與上述式(15)中之X7及X8作為聚合物之主鏈之一部分而形成鍵的情形;(i)上述式(2)中之X5、X6、R1及R2中之任一者與上述式(15)中之X7及X8中之任一個基作為聚合物之主鏈之一部分而形成鍵的情形。作為該等情形之重複單元之結構之具體例,例如有如下述式(22)、(23)之結構。 The boron-containing polymer represented by the above formula (21) has (i) any one of X 5 , X 6 , R 1 and R 2 in the above formula (2) and X in the above formula (15). 7 and X 8 are formed as a part of a main chain of the polymer; (i) any one of X 5 , X 6 , R 1 and R 2 in the above formula (2) and the above formula (15) The case where any one of X 7 and X 8 forms a bond as a part of the main chain of the polymer. Specific examples of the configuration of the repeating unit in such a case include the following formulas (22) and (23).
(i)上述式(2)中之X5、X6、R1及R2中之任兩者與上述式 (15)中之X7及X8作為聚合物之主鏈之一部分而形成鍵的情形時,可為源自上述式(2)之重複單元、源自上述式(15)之重複單元進行無規加成而成者,可為進行嵌段加成而成者,亦可為上述式(2)中之X5、X6、R1及R2之任一個基與上述式(15)中之X7及/或X8進行聚縮合而成者,該等之中,作為上述式(2)中之X5、X6、R1及R2之任兩個基與上述式(15)中之X7及/或X8進行聚縮合而成的聚合物之一例之上述式(2)中之X5、X6與上述式(15)中之X7及X8進行聚縮合而成者成為以下述式(24)所表示之結構為重複單元之聚合物。 (i) either of X 5 , X 6 , R 1 and R 2 in the above formula (2) and X 7 and X 8 in the above formula (15) form a bond as a part of the main chain of the polymer In the case of random addition of the repeating unit derived from the above formula (2) and the repeating unit derived from the above formula (15), it may be a block addition or a Any one of X 5 , X 6 , R 1 and R 2 in the above formula (2) is polycondensed with X 7 and/or X 8 in the above formula (15), among which In the above formula (2), the polymer of any one of X 5 , X 6 , R 1 and R 2 is polycondensed with X 7 and/or X 8 in the above formula (15). In the formula (2), X 5 and X 6 are polycondensed with X 7 and X 8 in the above formula (15), and the polymer represented by the following formula (24) is a repeating unit.
於上述(i)之結構之情形時,上述式(21)所表示之重複 單元中,作為源自上述式(2)之結構部分之具體例,有如上述式(13-1)~(13-6)之結構。該等之中,較佳為(13-1)、(13-6)之結構。更佳為(13-1)之結構。 In the case of the structure of the above (i), the repetition represented by the above formula (21) In the unit, as a specific example of the structural part derived from the above formula (2), there are structures of the above formulas (13-1) to (13-6). Among these, the structures of (13-1) and (13-6) are preferable. More preferably, the structure of (13-1).
作為上述式(2)中之X5、X6、R1及R2之任一個基與上述式 (15)中之X7及X8之任一個基進行聚縮合之情形時的反應性基之組合,可列舉與上述者相同者。即,於上述式(2)中之X5、X6、R1及R2之任一個基與上述式(15)中之X7及X8之任一個基進行聚縮合之情形時,上述式(15)中之X7及X8中,作為該聚縮合之基,較佳為結構中具有上述可進行聚縮合之反應性基之任一取代基。 A reactive group in the case where any one of X 5 , X 6 , R 1 and R 2 in the above formula (2) is polycondensed with any one of X 7 and X 8 in the above formula (15) The combination of the above may be the same as the above. That is, in the case where any one of X 5 , X 6 , R 1 and R 2 in the above formula (2) is polycondensed with any of X 7 and X 8 in the above formula (15), In X 7 and X 8 in the formula (15), as the group of the polycondensation, any substituent having the above-mentioned reactive group capable of undergoing polycondensation is preferably contained in the structure.
又,於上述式(15)中之X7及X8之任一者為結構中具有可單獨聚合之 反應性基之取代基之情形時,該取代基較佳為結構中具有上述可單獨聚合之反應性基之任一取代基。 Further, in the case where any of X 7 and X 8 in the above formula (15) is a substituent having a reactive group which can be polymerized alone in the structure, the substituent preferably has the above-mentioned separately polymerizable structure. Any substituent of the reactive group.
本發明之含硼聚合物之兩末端上所鍵結之基並無特別限 制,又,可相同亦可不同。作為上述兩末端上所鍵結之基,例如可列舉:氫原子、鹵素原子、可具有取代基之芳基、低聚芳基、1價雜環基、1價低聚雜環基、烷基、烷氧基、烷硫基、芳氧基、芳硫基、芳基烷基、芳基烷氧基、芳基烷硫基、烯基、炔基、烯丙基、胺基、偶氮基、羧基、醯基、烷氧基羰基、甲醯基、硝基、氰基、矽基、錫烷基、硼烷基、膦基、矽基氧基、芳基磺醯氧基、烷基磺醯氧基等。 The group to be bonded at both ends of the boron-containing polymer of the present invention is not particularly limited System, again, can be the same or different. Examples of the group bonded to the both terminals include a hydrogen atom, a halogen atom, an aryl group which may have a substituent, an oligoaryl group, a monovalent heterocyclic group, a monovalent oligomeric heterocyclic group, and an alkyl group. , alkoxy, alkylthio, aryloxy, arylthio, arylalkyl, arylalkoxy, arylalkylthio, alkenyl, alkynyl, allyl, amine, azo ,carboxy, fluorenyl, alkoxycarbonyl, decyl, nitro, cyano, decyl, tin alkyl, boralkyl, phosphino, decyloxy, arylsulfonyloxy, alkyl sulfonate Alkoxy groups, etc.
本發明中之含硼聚合物之重量平均分子量較佳為103~108。 若重量平均分子量為此種範圍,則可良好地薄膜化。更佳為103~107,進而較佳為104~106。 The weight average molecular weight of the boron-containing polymer in the present invention is preferably from 10 3 to 10 8 . When the weight average molecular weight is in such a range, it can be favorably thinned. More preferably, it is 10 3 to 10 7 , and further preferably 10 4 to 10 6 .
上述重量平均分子量可以聚苯乙烯換算,藉由凝膠滲透層析儀(GPC裝置,展開溶劑:氯仿)於以下裝置、及測定條件下測定。 The weight average molecular weight can be measured by a gel permeation chromatography (GPC apparatus, developing solvent: chloroform) in the following apparatus and measurement conditions in terms of polystyrene.
高速GPC裝置:HLC-8220GPC(東曹(Tosoh)公司製造) High-speed GPC device: HLC-8220GPC (manufactured by Tosoh Corporation)
展開溶劑 氯仿 Developing solvent chloroform
管柱 TSK-gel GMHXL×2根 Column TSK-gel GMHXL×2
溶離液流量1ml/min Dissolution flow rate 1ml/min
管柱溫度40℃ Column temperature 40 ° C
本發明中之含硼聚合物係藉由使包含上述式(2)所表示之含硼化合物之單體成分聚合而製造。該單體成分只要包含上述式(2)所表示之含硼化合物,則亦可包含其他單體,較佳為相對於單體成分整體100質量%包含上述式(2)所表示之含硼化合物0.1~99.9質量%。更佳為10~90質量%。 The boron-containing polymer in the present invention is produced by polymerizing a monomer component containing the boron-containing compound represented by the above formula (2). The monomer component may contain another monomer as long as it contains the boron-containing compound represented by the above formula (2), and preferably contains a boron-containing compound represented by the above formula (2) with respect to 100% by mass of the entire monomer component. 0.1 to 99.9 mass%. More preferably, it is 10 to 90% by mass.
又,聚合反應時,單體成分之固形物成分濃度可於0.01質量%~溶解 之最大濃度之範圍內適當設定,但若過於稀薄,則有反應之效率變差之虞,若過於濃厚,則有難以控制反應之虞,就此而言較佳為0.1~20質量%。 Further, in the polymerization reaction, the solid content concentration of the monomer component can be dissolved at 0.01% by mass. If it is too thin, the efficiency of the reaction may be deteriorated. If it is too thick, it may be difficult to control the reaction. Therefore, it is preferably 0.1 to 20% by mass.
作為上述其他單體,較佳為具有上述式(15)所表示之結構 者。再者,上述單體成分中,上述式(2)所表示之含硼化合物、式(15)所表示之化合物均可含有1種,亦可含有2種以上。 As the other monomer, it is preferred to have the structure represented by the above formula (15) By. In the above-mentioned monomer component, the boron-containing compound represented by the above formula (2) and the compound represented by the formula (15) may be contained alone or in combination of two or more.
作為上述其他單體,於包含具有上述式(15)所表示之結構 之化合物之情形時,較佳為相對於單體成分中所含之上述式(2)所表示之含硼化合物1莫耳,以0.3~3莫耳之比例包含具有上述式(15)所表示之結構之化合物。更佳為相對於上述式(2)所表示之含硼化合物1莫耳為0.2~2莫耳之比例。 As the other monomer, the structure represented by the above formula (15) is contained In the case of the compound, it is preferred to contain the boron-containing compound 1 mol represented by the above formula (2) contained in the monomer component, and the ratio represented by the above formula (15) is contained in a ratio of 0.3 to 3 mol. a compound of structure. More preferably, it is a ratio of 0.2 to 2 moles with respect to the boron-containing compound 1 represented by the above formula (2).
上述式(15)所表示之化合物中,X7及X8可使用與上述X5 及X6中之具有反應性基之取代基相同者。 In the compound represented by the above formula (15), X 7 and X 8 may be the same as those having a reactive group in the above X 5 and X 6 .
於藉由聚縮合反應而形成本發明中之含硼聚合物之情形 時,含硼聚合物之製造方法並無特別限制,例如可藉由日本特開2011-184430號公報中所記載之製造方法而製造。 In the case of forming a boron-containing polymer in the present invention by a polycondensation reaction The method for producing the boron-containing polymer is not particularly limited, and can be produced, for example, by the production method described in JP-A-2011-184430.
上述式(1)所表示之含硼化合物、或使包含上述式(2)所 表示之含硼化合物之單體成分聚合而獲得的含硼聚合物均可實現利用塗佈之均勻成膜,且具有較低之HOMO、LUMO能階,因此可較佳地用作本發明之第1有機電激發光元件之材料。 The boron-containing compound represented by the above formula (1) or the above formula (2) The boron-containing polymer obtained by polymerizing the monomer component of the boron-containing compound can achieve uniform film formation by coating, and has a lower HOMO, LUMO energy level, and thus can be preferably used as the first aspect of the present invention. 1 material of organic electroluminescent element.
[本發明之第2較佳形態之有機電激發光元件] [Organic Electroluminescent Device of Second Preferred Embodiment of the Present Invention]
本發明之第2較佳形態之有機電激發光元件(以下亦記作本發明之第2有機電激發光元件)係緩衝層含有還原劑者。本發明之有機電激發光元件中,如下所述,第1電極為陰極,第2電極為陽極,緩衝層為根據形成緩衝層之材料之選擇而可發揮出作為電子傳輸層之功能之層。 The organic electroluminescent device of the second preferred embodiment of the present invention (hereinafter also referred to as the second organic electroluminescent device of the present invention) is a buffer layer containing a reducing agent. In the organic electroluminescent device of the present invention, as described below, the first electrode is a cathode, the second electrode is an anode, and the buffer layer is a layer that functions as an electron transport layer depending on the material for forming the buffer layer.
有機電激發光元件中,自陽極供給電洞,自陰極供給電子,該等於發 光層中再結合而引起發光,自陽極供給之一部分電洞通過第2金屬氧化物層、發光層、緩衝層、第1金屬氧化物層而到達至陰極,可認為其為使有機電激發光元件之效率降低之一個原因。藉由設置特定厚度之緩衝層,可抑制電洞到達至陰極,因此可提高元件之效率。但是另一方面,若增厚緩衝層之厚度,則會妨礙電子自陰極向發光層之遷移,於緩衝層之厚度之影響相對較少之邊緣部與邊緣部以外之部分中,到達至發光層之電子之比例上產生差異,而產生僅邊緣部發光之現象。相對於此,若使緩衝層中含有具有供給電子之功能之還原劑,則可對發光層供給充分之電子,從而使電子與電洞之再結合有效地進行,發光所必需之驅動電壓亦變低。藉此,可製成發光效率極其優異之有機電激發光元件。 In the organic electroluminescent device, a hole is supplied from the anode, and electrons are supplied from the cathode, which is equal to The light layer is recombined to cause light emission, and a part of the hole from the anode supply reaches the cathode through the second metal oxide layer, the light-emitting layer, the buffer layer, and the first metal oxide layer, and is considered to be an organic electroluminescence light. One reason for the reduced efficiency of components. By providing a buffer layer of a specific thickness, it is possible to suppress the hole from reaching the cathode, thereby improving the efficiency of the element. On the other hand, if the thickness of the buffer layer is thickened, the migration of electrons from the cathode to the light-emitting layer is hindered, and the light-emitting layer is reached in a portion other than the edge portion and the edge portion where the thickness of the buffer layer is relatively less affected. There is a difference in the proportion of the electrons, and a phenomenon in which only the edge portion emits light is generated. On the other hand, when the buffer layer contains a reducing agent having a function of supplying electrons, sufficient electrons can be supplied to the light-emitting layer, and re-engagement of electrons and holes can be efficiently performed, and the driving voltage necessary for light emission also changes. low. Thereby, an organic electroluminescence device having extremely excellent luminous efficiency can be obtained.
本發明之第2有機電激發光元件較佳為於第1電極與第2 電極之間依序具有第1金屬氧化物層、緩衝層、積層於該緩衝層上之包含發光層之低分子化合物層、及第2金屬氧化物層,且該緩衝層含有還原劑。 The second organic electroluminescent device of the present invention is preferably the first electrode and the second electrode. The electrodes have a first metal oxide layer, a buffer layer, a low molecular compound layer containing a light emitting layer laminated on the buffer layer, and a second metal oxide layer, and the buffer layer contains a reducing agent.
本發明之第2有機電激發光元件只要於第1電極與第2電極之間依序具有第1金屬氧化物層、緩衝層、積層於該緩衝層上之包含發光層之低分子化合物層、及第2金屬氧化物層,則亦可具有該等以外之其他層。本發明中之低分子化合物之含義如上所述。 In the second organic electroluminescent device of the present invention, the first metal oxide layer, the buffer layer, and the low molecular compound layer containing the light emitting layer laminated on the buffer layer are sequentially provided between the first electrode and the second electrode. Further, the second metal oxide layer may have other layers than those described above. The meaning of the low molecular compound in the present invention is as described above.
本發明之第2有機電激發光元件中,緩衝層較佳為藉由塗佈 含有有機化合物之溶液而形成之平均厚度為5~100nm之層。 In the second organic electroluminescent device of the present invention, the buffer layer is preferably coated by coating A layer having an average thickness of 5 to 100 nm formed by a solution containing an organic compound.
本發明之第2有機電激發光元件於設為於第1金屬氧化物層上積層包含發光層之低分子化合物層之構成之情形時,有產生如下不良情況之虞:接觸於金屬氧化物層之低分子化合物層發生結晶化,因此洩漏電流增大而電流效率降低,於顯著之情形時會因結晶化而無法獲得均勻之面發光。有機無機混合型有機電激發光元件中,低分子化合物層發生結晶化之原因如上所述。此種結晶化係有機無機混合型有機電激發光元件所特有之課題, 為使用低分子化合物作為發光層之主體之情形時新產生之課題。 In the case where the second organic electroluminescent device of the present invention has a configuration in which a low molecular compound layer containing a light-emitting layer is laminated on the first metal oxide layer, there is a problem that the metal oxide layer is contacted. Since the low molecular compound layer is crystallized, the leakage current increases and the current efficiency decreases, and in a remarkable case, uniform surface light emission cannot be obtained due to crystallization. In the organic-inorganic hybrid organic electroluminescent device, the reason why the low molecular compound layer is crystallized is as described above. Such a crystallization is a problem unique to an organic-inorganic hybrid organic electroluminescence device. A new problem in the case of using a low molecular compound as a main component of the light-emitting layer.
針對該課題,若於第1金屬氧化物層與包含發光層之低分子化合物層之間設置藉由塗佈含有有機化合物之溶液而形成之平均厚度為5~100nm之緩衝層,則低分子化合物層中之低分子化合物之結晶化獲得抑制,藉此即便於有機無機混合型有機電激發光元件具有由低分子化合物形成之層作為發光層等之情形時,亦可抑制洩漏電流,又,可抑制由洩漏電流引起之不均勻之面發光。 In order to solve this problem, when a buffer layer having an average thickness of 5 to 100 nm formed by coating a solution containing an organic compound is provided between the first metal oxide layer and the low molecular compound layer containing the light-emitting layer, the low molecular compound When the crystallization of the low-molecular compound in the layer is suppressed, even when the organic-inorganic hybrid organic electroluminescent device has a layer formed of a low molecular compound as a light-emitting layer or the like, leakage current can be suppressed, and It suppresses uneven surface luminescence caused by leakage current.
如上所述,若增厚緩衝層之厚度,則可觀察到僅發光層之邊緣部分與其他部分相比較強地發光之現象,相對於此,藉由使緩衝層中含有還原劑,則可抑制此種僅邊緣部之發光,獲得均勻之面發光。因此,若應用本發明,則即便緩衝層之平均厚度為5~100nm,亦可獲得良好之元件特性。 As described above, when the thickness of the buffer layer is thickened, it is observed that only the edge portion of the light-emitting layer emits light more strongly than other portions, whereas the buffer layer contains a reducing agent, thereby suppressing This kind of illumination only at the edge portion achieves uniform surface illumination. Therefore, according to the present invention, even if the buffer layer has an average thickness of 5 to 100 nm, good element characteristics can be obtained.
本發明之第2有機電激發光元件為如此般藉由塗佈而形成可作為電子傳輸層而發揮功能之緩衝層,使該緩衝層中含有作為n型摻雜劑之還原劑者,藉由設為此種構成,亦可由低分子化合物形成發光層,又,發光效率亦優異。 The second organic electroluminescent device of the present invention is formed by coating to form a buffer layer capable of functioning as an electron transport layer, and the buffer layer contains a reducing agent as an n-type dopant. With such a configuration, the light-emitting layer can be formed of a low molecular compound, and the light-emitting efficiency is also excellent.
緩衝層之形成方法或材料、較佳厚度等如下所述。 The method or material for forming the buffer layer, the preferred thickness, and the like are as follows.
上述緩衝層所含之還原劑只要為推電子性之化合物,則並無 特別限制,較佳為可進行氫化物還原之氫化物還原劑。 The reducing agent contained in the buffer layer is not a compound for electron-donating, and there is no Particularly limited, a hydride reducing agent capable of performing hydride reduction is preferred.
作為氫化物還原劑,可使用2,3-二氫苯并[d]咪唑化合物;2,3-二氫苯并[d]噻唑化合物;2,3-二氫苯并[d]唑化合物;三苯基甲烷化合物;二氫吡啶化合物等之1種或2種以上。 As the hydride reducing agent, a 2,3-dihydrobenzo[d]imidazole compound; a 2,3-dihydrobenzo[d]thiazole compound; 2,3-dihydrobenzo[d] can be used. One or two or more kinds of the azole compound, the triphenylmethane compound, and the dihydropyridine compound.
如此,氫化物還原劑為選自由2,3-二氫苯并[d]咪唑化合物、2,3-二氫苯并[d]噻唑化合物、2,3-二氫苯并[d]唑化合物、三苯基甲烷化合物、及二氫吡啶化合物所組成之群中之至少1種化合物的形態為本發明之較佳實施形態之一。 Thus, the hydride reducing agent is selected from the group consisting of 2,3-dihydrobenzo[d]imidazole compounds, 2,3-dihydrobenzo[d]thiazole compounds, 2,3-dihydrobenzo[d] The form of at least one of the group consisting of the azole compound, the triphenylmethane compound, and the dihydropyridine compound is one of the preferred embodiments of the present invention.
作為氫化物還原劑,其中較佳為2,3-二氫苯并[d]咪唑化合物或二氫吡啶化合物。更佳為(4-(1,3-二甲基-2,3-二氫-1H-苯并咪唑-2-基)苯基)二甲基胺(N-DMBI)、或2,6-二甲基-1,4-二氫吡啶-3,5-二羧酸二乙酯(漢斯酯(Hantzsch ester))。 As the hydride reducing agent, a 2,3-dihydrobenzo[d]imidazole compound or a dihydropyridine compound is preferred among them. More preferably (4-(1,3-dimethyl-2,3-dihydro-1H-benzimidazol-2-yl)phenyl)dimethylamine (N-DMBI), or 2,6- Dimethyl-1,4-dihydropyridine-3,5-dicarboxylic acid diethyl ester (Hantzsch ester).
上述緩衝層所含之還原劑之量相對於形成緩衝層之有機化 合物100質量%,較佳為0.1~15質量%。若以此種比例含有還原劑,則可使有機電激發光元件之發光效率變得足夠高。更佳為相對於形成緩衝層之有機化合物100質量%為0.5~10質量%,進而較佳為1~5質量%。 The amount of the reducing agent contained in the buffer layer is relative to the organication forming the buffer layer The compound is 100% by mass, preferably 0.1 to 15% by mass. When the reducing agent is contained in such a ratio, the luminous efficiency of the organic electroluminescent device can be made sufficiently high. More preferably, it is 0.5 to 10% by mass, and more preferably 1 to 5% by mass based on 100% by mass of the organic compound forming the buffer layer.
本發明之第2有機電激發光元件包含積層於緩衝層上之包 含發光層之低分子化合物層,所謂包含發光層之低分子化合物層,係指由低分子化合物形成之1個層或由低分子化合物形成之複數層積層而成且其中1個層為發光層者。即,所謂包含發光層之低分子化合物層,係指由低分子化合物形成之發光層、或由低分子化合物形成之發光層與由低分子化合物形成之其他層積層而成者中之任一者。由低分子化合物形成之其他層可為1層,亦可為2層以上。又,發光層與其他層之積層順序並無特別限制。 The second organic electroluminescent device of the present invention comprises a package laminated on a buffer layer The low molecular compound layer containing the light emitting layer, the low molecular compound layer containing the light emitting layer means one layer formed of a low molecular compound or a plurality of laminated layers formed of a low molecular compound and one of which is a light emitting layer. By. In other words, the low molecular compound layer including the light-emitting layer means any one of a light-emitting layer formed of a low molecular compound or a light-emitting layer formed of a low molecular compound and another laminated layer formed of a low molecular compound. . The other layer formed of the low molecular compound may be one layer or two or more layers. Further, the order of lamination of the light-emitting layer and the other layers is not particularly limited.
上述由低分子化合物形成之其他層較佳為電洞傳輸層或電 子傳輸層。即,於低分子化合物層為由複數層構成者之情形時,較佳為具有電洞傳輸層及/或電子傳輸層作為發光層以外之其他層。如此,有機電激發光元件具有電洞傳輸層及/或電子傳輸層作為與發光層不同之獨立之層的形態為本發明之第2有機電激發光元件之較佳實施形態之一。 The other layer formed of the low molecular compound is preferably a hole transport layer or electricity. Sub transport layer. That is, in the case where the low molecular compound layer is composed of a plurality of layers, it is preferred to have a hole transport layer and/or an electron transport layer as a layer other than the light emitting layer. As described above, the organic electroluminescence device has one of a preferred embodiment of the second organic electroluminescence device of the present invention in that the hole transport layer and/or the electron transport layer are separate layers from the light-emitting layer.
於本發明之第2有機電激發光元件具有電洞傳輸層作為獨立之層之情形時,較佳為於發光層與第2金屬氧化物層之間具有電洞傳輸層。於本發明之第2有機電激發光元件具有電子傳輸層作為獨立之層之情形時,較佳為於緩衝層與發光層之間具有電子傳輸層。 In the case where the second organic electroluminescent device of the present invention has a hole transport layer as an independent layer, it is preferable to have a hole transport layer between the light-emitting layer and the second metal oxide layer. In the case where the second organic electroluminescent device of the present invention has an electron transport layer as an independent layer, it is preferred to have an electron transport layer between the buffer layer and the light-emitting layer.
於本發明之第2有機電激發光元件不具有電洞傳輸層或電子傳輸層作為獨立之層之情形時,作為本發明之第2有機電激發光元件之必需構成而具有之層之任一者兼具該等層之功能。 When the second organic electroluminescent device of the present invention does not have a hole transport layer or an electron transport layer as an independent layer, any one of the layers of the second organic electroluminescent device of the present invention has a necessary structure. Both have the functions of these layers.
本發明之第2有機電激發光元件之較佳形態之一為有機電 激發光元件僅由第1電極、第1金屬氧化物層、緩衝層、發光層、電洞傳輸層、第2金屬氧化物層、第2電極構成,且該等層之任一者兼具電子傳輸層之功能的形態。 One of the preferred embodiments of the second organic electroluminescent device of the present invention is organic electricity. The excitation light element is composed only of the first electrode, the first metal oxide layer, the buffer layer, the light-emitting layer, the hole transport layer, the second metal oxide layer, and the second electrode, and any of the layers has both electrons The form of the function of the transport layer.
又,有機電激發光元件僅由第1電極、第1金屬氧化物層、緩衝層、發光層、第2金屬氧化物層、第2電極構成,且該等層之任一者兼具電洞傳輸層及電子傳輸層之功能的形態亦又為本發明之第2有機電激發光元件之較佳形態之一。 Further, the organic electroluminescence device is composed only of the first electrode, the first metal oxide layer, the buffer layer, the light-emitting layer, the second metal oxide layer, and the second electrode, and any of the layers has a hole The form of the function of the transport layer and the electron transport layer is also one of the preferred embodiments of the second organic electroluminescent device of the present invention.
本發明之第2有機電激發光元件中,第1電極為陰極,第2 電極為陽極。可用作第1電極、第2電極之化合物及其中之較佳者與上述本發明之第1有機電激發光元件相同。 In the second organic electroluminescence device of the present invention, the first electrode is a cathode, and the second The electrode is an anode. The compound which can be used as the first electrode and the second electrode and the like thereof are the same as those of the first organic electroluminescent device of the present invention described above.
又,第1電極、第2電極之平均厚度之較佳值亦與上述本發明之第1有機電激發光元件相同。 Further, preferred values of the average thickness of the first electrode and the second electrode are also the same as those of the first organic electroluminescent device of the present invention.
上述第1金屬氧化物層係作為電子注入層而發揮功能之層,第2金屬氧化物層係作為電洞注入層而發揮功能之層。 The first metal oxide layer is a layer that functions as an electron injection layer, and the second metal oxide layer functions as a hole injection layer.
形成第1金屬氧化物層、第2金屬氧化物層之化合物之具體例及其中之較佳者與上述本發明之第1有機電激發光元件相同。 Specific examples of the compound forming the first metal oxide layer and the second metal oxide layer and preferred ones thereof are the same as those of the first organic electroluminescence device of the present invention described above.
上述第1金屬氧化物層之平均厚度並無特別限定,較佳為1~1000nm。更佳為2~100nm。 The average thickness of the first metal oxide layer is not particularly limited, but is preferably 1 to 1000 nm. More preferably 2 to 100 nm.
上述第2金屬氧化物層之平均厚度並無特別限定,較佳為1~1000nm。更佳為5~50nm。 The average thickness of the second metal oxide layer is not particularly limited, but is preferably 1 to 1000 nm. More preferably 5 to 50 nm.
第1金屬氧化物層之平均厚度可藉由觸針式段差計、分光橢圓偏光儀 測定。 The average thickness of the first metal oxide layer can be obtained by a stylus type step meter and a spectroscopic ellipsometer Determination.
第2金屬氧化物層之平均厚度可藉由晶體振盪膜厚儀於成膜時測定。 The average thickness of the second metal oxide layer can be measured by a crystal oscillation film thickness gauge at the time of film formation.
作為發光層之材料,可使用通常可用作發光層之材料之任一 種低分子化合物,亦可將該等混合使用。 As the material of the light-emitting layer, any of materials which are generally used as the light-emitting layer can be used. A low molecular compound may also be used in combination.
作為低分子系者,可使用與上述本發明之第1有機電激發光元件中之低分子系者相同者。 As the low molecular weight, the same as the low molecular weight of the first organic electroluminescence device of the present invention described above can be used.
上述發光層亦可含有摻雜劑。作為摻雜劑,可使用與上述本 發明之第1有機電激發光元件中之摻雜劑相同者,發光層含有摻雜劑之情形時的摻雜劑之含量之較佳範圍亦與上述本發明之第1有機電激發光元件之情形相同。 The above light-emitting layer may also contain a dopant. As a dopant, it can be used with the above In the case where the dopant in the first organic electroluminescence device of the invention is the same, the preferable range of the content of the dopant in the case where the light-emitting layer contains a dopant is also the same as that of the first organic electroluminescent device of the present invention. The situation is the same.
關於本發明之第2有機電激發光元件之發光層,上述者中較 佳為含有發磷光材料者。藉由使發光層含有發磷光材料,而有機電激發光元件成為發光效率更優異者。 Regarding the light-emitting layer of the second organic electroluminescence device of the present invention, among the above Jia is a person who contains phosphorescent materials. By including the phosphorescent material in the light-emitting layer, the organic electroluminescent device is more excellent in luminous efficiency.
於發光層含有發磷光材料之情形時,較佳為由使主體材料中含有發磷光材料作為客體材料(摻雜劑)的材料形成發光層。於發光層為由此種材料形成者之情形時,發磷光材料相對於形成發光層之材料的含量較佳為與上述發光層含有摻雜劑之情形時的摻雜劑相對於形成發光層之材料的含量相同。 In the case where the light-emitting layer contains a phosphorescent material, it is preferred to form the light-emitting layer from a material containing a phosphorescent material as a guest material (dopant) in the host material. In the case where the light-emitting layer is formed of such a material, the content of the phosphorescent material relative to the material forming the light-emitting layer is preferably such that the dopant in the case where the light-emitting layer contains a dopant is opposite to the light-emitting layer. The content of the materials is the same.
作為上述發磷光材料,可較佳地使用下述式(25)、(26)之 任一者所表示之化合物。 As the phosphorescent material, the following formulas (25) and (26) can be preferably used. A compound represented by either.
(式(25)中,虛線之圓弧表示與由氧原子與3個碳原子構
成之骨架部分之一部分一起形成環結構,包含氮原子而形成之環結構為雜環結構;X'、X"相同或不同,表示氫原子、或成為環結構之取代基的1價取代基,亦可於形成虛線之圓弧部分之環結構上鍵結複數個;X'、X"亦可鍵結而與虛線之圓弧所表示之2個環結構之一部分一起形成新的環結構;又,於n2為2以上之情形時,亦可複數個X'彼此或X"彼此鍵結而形成1個取代基;由氮原子與3個碳原子構成之骨架部分中之虛線表示以虛線連結之2個原子以單鍵或雙鍵鍵結;M'表示金屬原子;自氮原子指向M'之箭頭表示氮原子對M'原子進行配位;n2表示金屬原子M'之價數)
(式(26)中,虛線之圓弧表示與由氧原子與3個碳原子構 成之骨架部分之一部分一起形成環結構,包含氮原子而形成之環結構為雜環結構;X'、X"相同或不同,表示氫原子、或成為環結構之取代基的1價取代基,亦可於形成虛線之圓弧部分之環結構上鍵結複數個;X'、X"亦可鍵結而與虛線之圓弧所表示之2個環結構之一部分一起形成新的環結構。由 氮原子與3個碳原子構成之骨架部分中之虛線表示以虛線連結之2個原子以單鍵或雙鍵鍵結;M'表示金屬原子;自氮原子指向M'之箭頭表示氮原子對M'原子進行配位;n2表示金屬原子M'之價數;連結Xa與Xb之實線之圓弧表示Xa與Xb介隔至少1個其他原子而鍵結,亦可Xa與Xb一起形成環結構;Xa、Xb相同或不同,表示氧原子、氮原子、碳原子之任一者;自Xb指向M'之箭頭表示Xb對M'原子進行配位;m'為1~3之數) (In the formula (26), a circular arc of a broken line indicates a ring structure together with a part of a skeleton portion composed of an oxygen atom and three carbon atoms, and a ring structure formed by containing a nitrogen atom is a heterocyclic structure; X', X" The same or different, a monovalent substituent representing a hydrogen atom or a substituent which becomes a ring structure may be bonded to a ring structure forming a circular arc portion of a broken line; X', X" may also be bonded and A part of the two ring structures represented by the arc of the dotted line together form a new ring structure. The dotted line in the skeleton portion composed of a nitrogen atom and three carbon atoms represents two atoms linked by a broken line as a single bond or a double bond. M' represents a metal atom; the arrow from the nitrogen atom pointing to M' indicates that the nitrogen atom coordinates the M'atom; n 2 represents the valence of the metal atom M'; the arc connecting the solid line of X a and X b It is indicated that X a and X b are bonded by at least one other atom, and X a and X b together form a ring structure; X a and X b are the same or different, and represent any of an oxygen atom, a nitrogen atom and a carbon atom. The arrow from X b to M' indicates that X b coordinates to the M'atom;m' is the number from 1 to 3)
作為上述式(25)及式(26)中之虛線之圓弧所表示之環結構,可列舉碳數2~20之芳香環或雜環,可列舉:苯環、萘環、蒽環等芳香族烴環;吡啶環、嘧啶環、吡環、三環、苯并噻唑環、苯并硫醇環、苯并唑環、苯并氧雜環戊烯環、苯并咪唑環、喹啉環、異喹啉環、喹啉環、及啡啶環、噻吩環、呋喃環、苯并噻吩環、苯并呋喃環等雜環。 Examples of the ring structure represented by the circular arc of the dotted line in the above formulas (25) and (26) include an aromatic ring or a heterocyclic ring having 2 to 20 carbon atoms, and examples thereof include a benzene ring, a naphthalene ring, and an anthracene ring. Hydrocarbon ring; pyridine ring, pyrimidine ring, pyridyl Ring, three Ring, benzothiazole ring, benzothiol ring, benzo Oxazole ring, benzoxetylene ring, benzimidazole ring, quinoline ring, isoquinoline ring, quin a sulfonate ring, and a heterocyclic ring such as a pyridine ring, a thiophene ring, a furan ring, a benzothiophene ring, or a benzofuran ring.
上述式(25)及式(26)中,作為X'、X"所表示之環結構所具有之取代基,可列舉:鹵素原子,碳數1~20、較佳為碳數1~10之烷基,碳數1~20、較佳為碳數1~10之芳烷基,碳數1~20、較佳為碳數1~10之烯基,碳數1~20、較佳為碳數1~10之芳基,芳基胺基,氰基,胺基,醯基,碳數1~20、較佳為碳1~10之烷氧基羰基,羧基,碳數1~20、較佳為碳數1~10之烷氧基,碳數1~20、較佳為碳數1~10之烷基胺基,碳數1~20、較佳為碳數1~10之二烷基胺基,碳數1~20、較佳為碳數1~10之芳烷基胺基,碳數1~20、較佳為碳數1~10之鹵烷基,羥基,芳氧基,咔唑基等。 In the above formula (25) and (26), examples of the substituent of the ring structure represented by X' and X" include a halogen atom, a carbon number of 1 to 20, preferably a carbon number of 1 to 10. An alkyl group having 1 to 20 carbon atoms, preferably an aralkyl group having 1 to 10 carbon atoms, an alkenyl group having 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, and 1 to 20 carbon atoms, preferably carbon. 1 to 10 aryl, arylamine, cyano, amine, fluorenyl, alkoxycarbonyl having 1 to 20 carbon atoms, preferably 1 to 10 carbon, carboxyl group, carbon number 1 to 20, Preferably, it is an alkoxy group having 1 to 10 carbon atoms, a carbon number of 1 to 20, preferably an alkylamino group having 1 to 10 carbon atoms, a carbon number of 1 to 20, preferably a dialkyl group having 1 to 10 carbon atoms. Amino group, arylalkylamino group having 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, haloalkyl group having 1 to 20 carbon atoms, preferably 1 to 10 carbon atoms, hydroxyl group, aryloxy group, hydrazine Azolyl and the like.
再者,於X'、X"所表示之環結構所具有之取代基為芳基、芳基胺基之情形時,芳基、芳基胺基中所含之芳香環亦可進而具有取代基,作為此情形時之取代基,可列舉與上述X'、X"所表示之取代基之具體例相同者。 In the case where the substituent represented by X' and X" has an aryl group or an arylamine group, the aromatic ring contained in the aryl group or the arylamine group may further have a substituent. The substituent in this case is the same as the specific example of the substituent represented by the above X' and X".
上述式(25)及式(26)中,於X'、X"所表示之 取代基彼此鍵結而與虛線之圓弧所表示之2個環結構之一部分一起形成新的環結構之情形時,作為合併虛線之圓弧所表示之2個環結構與新的環結構之環結構,例如可列舉如下述(27-1)、(27-2)之結構。 In the above formulas (25) and (26), represented by X' and X" When the substituents are bonded to each other and form a new ring structure together with one of the two ring structures represented by the arc of the broken line, the two ring structures represented by the arcs of the merged dashed line and the ring of the new ring structure The structure is, for example, the following structures (27-1) and (27-2).
上述式(25)及式(26)中,作為M'所表示之金屬原子,可列舉:釕、銠、鈀、銀、錸、鋨、銥、鉑及金。 In the above formula (25) and formula (26), examples of the metal atom represented by M' include ruthenium, rhodium, palladium, silver, rhodium, iridium, iridium, platinum, and gold.
作為上述式(26)所表示之結構,可列舉下述式(28-1)、(28-2)之結構等。 Examples of the structure represented by the above formula (26) include the structures of the following formulas (28-1) and (28-2).
(式(28-1)、(28-2)中,R3~R5相同或不同,表示氫原 子或1價取代基;式(28-2)中,於R3~R5為1價取代基之情形時,環結構亦可具有複數個1價取代基;自氮原子指向M'之箭頭及自氧原子指向M'之箭頭表示氮原子、氧原子對M'原子進行配位;虛線之圓弧、由氮原子與3個碳原子構成之骨架部分中之虛線、X'、X"、M'、n2、m'與式(26)相同) (In the formulae (28-1) and (28-2), R 3 to R 5 are the same or different and each represents a hydrogen atom or a monovalent substituent; and in the formula (28-2), R 3 to R 5 are monovalent. In the case of a substituent, the ring structure may have a plurality of monovalent substituents; an arrow pointing from the nitrogen atom to M' and an arrow pointing from the oxygen atom to M' indicate that the nitrogen atom and the oxygen atom coordinate the M'atom; The circular arc, the dotted line in the skeleton portion composed of a nitrogen atom and three carbon atoms, X', X", M', n 2 , m' is the same as in the formula (26)
作為R3~R5之1價取代基,可列舉與上述式(25)、(26)中X'、X"所表示之環結構所具有之取代基相同者。 Examples of the monovalent substituent of R 3 to R 5 include the same substituents as those of the ring structure represented by X' and X" in the above formulas (25) and (26).
作為上述式(25)或式(26)所表示之化合物之具體例,可列舉下述式(29-1)~(29-30)所表示之化合物等。 Specific examples of the compound represented by the above formula (25) or (26) include compounds represented by the following formulas (29-1) to (29-30).
作為本發明中之發磷光材料,可使用上述者之1種或2種以 上,該等之中,較佳為上述式(29-1)所表示之三(2-苯基吡啶)銥(Ir(ppy)3)、上述式(29-19)所表示之三(1-苯基異喹啉)銥(Ir(piq)3)、上述式(29-27)所表示之雙(2-甲基二苯并-[f,h]喹啉)(乙醯丙酮)銥(Ir(MDQ)2(acac))、上述式(29-28)所表示之三[3-甲基-2-苯基吡啶]銥(Ir(mpy)3)等。 As the phosphorescent material of the present invention, one type or two or more types of the above may be used, and among these, tris(2-phenylpyridine)anthracene (Ir) represented by the above formula (29-1) is preferable. (ppy) 3 ), tris(1-phenylisoquinoline)indole (Ir(piq) 3 ) represented by the above formula (29-19), and bis(2-A represented by the above formula (29-27) Dibenzo-[f,h]quina (i(MDQ) 2 (acac)), three [3-methyl-2-phenylpyridine] oxime (Ir(mpy) 3 ) represented by the above formula (29-28) Wait.
作為上述主體材料,可列舉:下述式(30)所表示之金屬錯 合物、下述式(31)所表示之金屬錯合物、下述式(32)所表示之金屬錯合物,可使用該等之1種或2種以上。 As the host material, a metal error represented by the following formula (30) is exemplified. The metal complex represented by the following formula (31) and the metal complex represented by the following formula (32) may be used alone or in combination of two or more.
(式(30)中,虛線之圓弧表示與連結氧原子與氮原子之骨 架部分之一部分一起形成環結構,包含Z1與氮原子而形成之環結構為雜環 結構;X'、X"相同或不同,表示氫原子、或成為環結構之取代基的1價取代基,亦可於形成虛線之圓弧部分之環結構上鍵結複數個;X'、X"亦可鍵結而與虛線之圓弧所表示之2個環結構之一部分一起形成新的環結構;連結氧原子與氮原子之骨架部分中之虛線表示以虛線連結之2個原子以單鍵或雙鍵鍵結;M表示金屬原子;Z1表示碳原子或氮原子;自氮原子指向M之箭頭表示氮原子對M原子進行配位;R0表示1價取代基或2價連結基;m表示R0之個數,為0或1之數;n3表示金屬原子M之價數;r為1或2之數) (In the formula (30), the circular arc of the broken line indicates a ring structure together with a portion of the skeleton portion connecting the oxygen atom and the nitrogen atom, and the ring structure including Z 1 and the nitrogen atom is a heterocyclic structure; X', X" The same or different, a monovalent substituent representing a hydrogen atom or a substituent which becomes a ring structure may be bonded to a ring structure forming a circular arc portion of a broken line; X', X" may also be bonded and One of the two ring structures represented by the arc of the dotted line together forms a new ring structure; the dotted line in the skeleton portion connecting the oxygen atom and the nitrogen atom indicates that two atoms linked by a broken line are bonded by a single bond or a double bond; Represents a metal atom; Z 1 represents a carbon atom or a nitrogen atom; an arrow pointing from the nitrogen atom to M indicates that the nitrogen atom coordinates the M atom; R 0 represents a monovalent substituent or a divalent linking group; m represents the number of R 0 , is 0 or 1; n 3 represents the valence of the metal atom M; r is the number of 1 or 2)
(式中,X'、X"相同或不同,表示氫原子、或成為喹啉環結 構之取代基之1價取代基,亦可於喹啉環結構上鍵結複數個;M表示金屬原子;自氮原子指向M之箭頭表示氮原子對M原子進行配位;R0表示1價取代基或2價連結基;m表示R0之個數,為0或1之數;n3表示金屬原子M之價數;r為1或2之數) (wherein X' and X" are the same or different and each represents a hydrogen atom or a monovalent substituent which becomes a substituent of a quinoline ring structure, and may also be bonded to a plurality of quinoline ring structures; M represents a metal atom; The arrow from the nitrogen atom to M indicates that the nitrogen atom coordinates the M atom; R 0 represents a monovalent substituent or a divalent linking group; m represents the number of R 0 , which is a number of 0 or 1; n 3 represents a metal atom The price of M; r is the number of 1 or 2)
(式中,虛線之圓弧表示與連結氧原子與氮原子之骨架部分 之一部分一起形成環結構,包含Z1與氮原子而形成之環結構為雜環結構; X'、X"相同或不同,表示氫原子、或成為環結構之取代基的1價取代基,亦可於形成虛線之圓弧部分之環結構上鍵結複數個;X'、X"亦可鍵結而與虛線之圓弧所表示之2個環結構之一部分一起形成新的環結構;連結氧原子與氮原子之骨架部分中之虛線表示以虛線連結之2個原子以單鍵或雙鍵鍵結;M表示金屬原子;Z1表示碳原子或氮原子;自氮原子指向M之箭頭表示氮原子對M原子進行配位;n3表示金屬原子M之價數;連結Xa與Xb之實線之圓弧表示Xa與Xb介隔至少1個其他原子而鍵結,亦可Xa與Xb一起形成環結構;又,介隔至少1個其他原子之Xa與Xb之鍵中亦可包含配位鍵;Xa、Xb相同或不同,表示氧原子、氮原子、碳原子之任一者;自Xb指向M之箭頭表示Xb對M原子進行配位;m'為1~3之數) (wherein, the circular arc of the dotted line indicates a ring structure together with a portion of the skeleton portion connecting the oxygen atom and the nitrogen atom, and the ring structure formed by including Z 1 and the nitrogen atom is a heterocyclic structure; X', X" are the same or different , a hydrogen atom, or a monovalent substituent which becomes a substituent of a ring structure, may also be bonded to a ring structure forming a circular arc portion of a broken line; X', X" may also be bonded to a circle of a dotted line One of the two ring structures represented by the arc forms a new ring structure together; the dotted line in the skeleton portion connecting the oxygen atom and the nitrogen atom indicates that two atoms linked by a broken line are bonded by a single bond or a double bond; M represents a metal atom. Z 1 represents a carbon atom or a nitrogen atom; an arrow pointing from the nitrogen atom to M indicates that the nitrogen atom coordinates the M atom; n 3 represents the valence of the metal atom M; an arc representing the solid line connecting X a and X b X a and X b are bonded by at least one other atom, and X a and X b together form a ring structure; and, in addition, at least one other atom may also contain a bond between X a and X b . bond; X a, X b are the same or different, represent any one of an oxygen atom, a nitrogen atom, a carbon atom of one Arrow pointing from X b X b M represents the atom is coordinated to M; m 'is a number of 1 to 3)
上述式(30)中,於r為1之情形時,成為結構中具有1個M原子之下述式(33-1)所表示之金屬錯合物,於r為2之情形時,成為結構中具有2個M原子之下述式(33-2)所表示之金屬錯合物。 In the case of the above formula (30), when r is 1, it is a metal complex represented by the following formula (33-1) having one M atom in the structure, and when r is 2, it becomes a structure. A metal complex represented by the following formula (33-2) having two M atoms.
上述式(30)、式(32)中,作為虛線之圓弧所表示之環結 構,可為由1個環構成之環結構,亦可為由2個以上之環構成之環結構。作為此種環結構,可列舉碳數2~20之芳香環或雜環,可列舉:苯環、萘環、蒽環等芳香環;二唑環、噻唑環、異噻唑環、唑環、異唑環、噻二唑環、二唑環、三唑環、咪唑環、咪唑啉環、吡啶環、吡環、嗒環、嘧啶環、二環、三環、苯并咪唑環、苯并噻唑環、苯并唑環、苯并三唑環等雜環。 In the above formulas (30) and (32), the ring structure represented by the circular arc of the broken line may be a ring structure composed of one ring or a ring structure composed of two or more rings. Examples of the ring structure include an aromatic ring or a heterocyclic ring having 2 to 20 carbon atoms, and examples thereof include an aromatic ring such as a benzene ring, a naphthalene ring or an anthracene ring; a diazole ring, a thiazole ring, and an isothiazole ring. Oxazole ring, different Oxazole ring, thiadiazole ring, Diazole ring, triazole ring, imidazole ring, imidazoline ring, pyridine ring, pyridyl Ring, 嗒 Ring, pyrimidine ring, two Ring, three Ring, benzimidazole ring, benzothiazole ring, benzo A heterocyclic ring such as an azole ring or a benzotriazole ring.
該等之中,較佳為苯環、噻唑環、異噻唑環、唑環、異唑環、噻二唑環、二唑環、三唑環、咪唑環、咪唑啉環、吡啶環、嗒環、嘧啶環、苯并咪唑環、苯并噻唑環、苯并唑環、苯并三唑環。 Among these, a benzene ring, a thiazole ring, an isothiazole ring, Oxazole ring, different Oxazole ring, thiadiazole ring, Diazole ring, triazole ring, imidazole ring, imidazoline ring, pyridine ring, hydrazine Ring, pyrimidine ring, benzimidazole ring, benzothiazole ring, benzo Oxazole ring, benzotriazole ring.
上述式(30)~(32)中,作為X'、X"所表示之環結構所具有之取代基,可列舉與上述式(25)、式(26)中X'、X"所表示之環結構所具有之取代基相同者。 In the above formulae (30) to (32), examples of the substituent of the ring structure represented by X' and X" include those represented by X' and X" in the above formulas (25) and (26). The ring structure has the same substituents.
上述式(30)、式(32)中,於X'、X"所表示之環結構所具有之取代基彼此鍵結而與虛線之圓弧所表示之2個環結構之一部分一起形成新的環結構之情形時,作為合併虛線之圓弧所表示之2個環結構與新的環結構之環結構,例如可列舉如上述(27-1)、(27-2)之結構。 In the above formulas (30) and (32), the substituents of the ring structure represented by X' and X" are bonded to each other and form a new one together with one of the two ring structures represented by the arc of the broken line. In the case of the ring structure, as the ring structure of the two ring structures and the new ring structure represented by the arc of the merging line, for example, the structures of the above (27-1) and (27-2) can be cited.
上述式(30)~(32)中,作為M所表示之金屬原子,較佳為週期表之第1~3族、9族、10族、12族或13族之金屬原子,較佳為鋅、鋁、鎵、鉑、銠、銥、鈹、鎂之任一者。 In the above formulae (30) to (32), the metal atom represented by M is preferably a metal atom of Groups 1 to 3, Group 9, Group 10, Group 12 or Group 13 of the periodic table, preferably zinc. Any of aluminum, gallium, platinum, rhodium, ruthenium, osmium, and magnesium.
上述式(30)、式(31)中,於R0為1價取代基之情形時,1價取代基較佳為下述式(34-1)~(34-3)之任一者。 In the above formula (30) and formula (31), when R 0 is a monovalent substituent, the monovalent substituent is preferably any one of the following formulas (34-1) to (34-3).
(式中,Ar1~Ar5表示可具有取代基之芳香環、雜環、或2 個以上芳香環或雜環直接鍵結之結構,Ar3~Ar5可為相同結構亦可為不同結構;Q0表示矽原子或鍺原子) (wherein, Ar 1 to Ar 5 represent a structure in which an aromatic ring, a hetero ring, or two or more aromatic rings or heterocyclic rings which may have a substituent may be directly bonded, and Ar 3 to Ar 5 may have the same structure or different structures. ;Q 0 represents a helium atom or a helium atom)
作為Ar1~Ar5之芳香環或雜環之具體例,可列舉與上述式(30)中虛線之圓弧所表示之環結構的芳香環或雜環之具體例相同者,作為2個以上芳香環或雜環直接鍵結之結構,可列舉作為該等芳香環或雜環之具體例所列舉之環結構2個以上直接鍵結之結構。再者,於此情形時,直接鍵結之2個以上之芳香環或雜環可為相同之環結構,亦可為不同之環結構。 Specific examples of the aromatic ring or the hetero ring of Ar 1 to Ar 5 include the same as the specific examples of the aromatic ring or the hetero ring of the ring structure represented by the arc of the broken line in the above formula (30), and two or more examples thereof. The structure in which the aromatic ring or the hetero ring is directly bonded may be a structure in which two or more ring structures exemplified as specific examples of the aromatic ring or the hetero ring are directly bonded. Further, in this case, two or more aromatic rings or heterocyclic rings directly bonded may have the same ring structure or different ring structures.
作為芳香環或雜環之取代基之具體例,可列舉與上述式(30)中虛線之圓弧所表示之環結構的芳香環或雜環之取代基之具體例相同者。 Specific examples of the substituent of the aromatic ring or the hetero ring include the same as the specific examples of the substituent of the aromatic ring or the hetero ring represented by the ring structure represented by the circular arc in the above formula (30).
上述式(30)、式(31)中,於R0為2價連結基之情形時, R0較佳為-O-、-CO-之任一者。 In the above formulas (30) and (31), when R 0 is a divalent linking group, R 0 is preferably any of -O- and -CO-.
上述式(32)中,由Xa、Xb與連結Xa與Xb之實線之圓弧形 成之結構可包含1個或複數個環結構。環結構亦可包含Xa、Xb而形成,作為此情形之環結構,可列舉與上述式(30)、式(32)中虛線之圓弧所表示之環結構相同者或吡唑環。較佳為包含Xa、Xb而形成吡唑環之結構。 The above-described formula (32), the structure is formed by an arc of a solid line X a, X b and X a and X b connected to it or may comprise a plurality of ring structures. The ring structure may be formed by including X a and X b , and the ring structure in this case may be the same as the ring structure represented by the arc of the broken line in the above formulas (30) and (32) or the pyrazole ring. A structure comprising X a and X b to form a pyrazole ring is preferred.
上述式(32)中,連結Xa與Xb之實線之圓弧可為僅由碳原 子構成者,亦可包含其他原子。作為其他原子,可列舉:硼原子、氮原子、硫原子等。 In the above formula (32), the arc of the solid line connecting X a and X b may be composed only of carbon atoms, and may contain other atoms. Examples of the other atom include a boron atom, a nitrogen atom, and a sulfur atom.
又,連結Xa與Xb之實線之圓弧亦可包含1個或2個以上包含Xa、Xb而形成之環結構以外之環結構,作為此情形之環結構,可列舉與上述式 (30)、式(32)中虛線之圓弧所表示之環結構相同者或吡唑環。 Further, the circular arc connecting the solid lines of X a and X b may include one or two or more ring structures other than the ring structure formed by X a and X b , and the ring structure in this case may be exemplified above. The ring structure represented by the arc of the broken line in the formula (30) or the formula (32) is the same or the pyrazole ring.
作為上述式(32)所表示之結構,可列舉下述式(35)之結構等。 The structure represented by the above formula (32) includes the structure of the following formula (35).
(式(35)中,R3~R5相同或不同,表示氫原子或1價取代 基;自氮原子指向M之箭頭及自氧原子指向M之箭頭表示氮原子、氧原子對M原子進行配位;虛線之圓弧、連結氧原子與氮原子之骨架部分中之虛線、X'、X"、M、Z1、n3、m'與式(32)相同) (In the formula (35), R 3 to R 5 are the same or different and each represents a hydrogen atom or a monovalent substituent; an arrow pointing from the nitrogen atom to M and an arrow pointing from the oxygen atom to M indicate that a nitrogen atom or an oxygen atom is used for the M atom. Coordination; the arc of the dotted line, the dotted line in the skeleton portion connecting the oxygen atom and the nitrogen atom, X', X", M, Z 1 , n 3 , m' are the same as in the formula (32)
作為式(35)之R3~R5之1價取代基,可列舉與上述式(25)、(26)中X'、X"所表示之環結構所具有之取代基相同者。 Examples of the monovalent substituent of R 3 to R 5 in the formula (35) include the same substituents as those of the ring structure represented by X' and X" in the above formulas (25) and (26).
作為上述式(30)所表示之化合物之具體例,可列舉下述式 (36-1)~(36-40)所表示之結構之化合物等。 Specific examples of the compound represented by the above formula (30) include the following formula a compound of the structure represented by (36-1) to (36-40).
作為上述式(31)所表示之化合物之具體例,可列舉下述式(37-1)~(37-3)所表示之結構之化合物等。 Specific examples of the compound represented by the above formula (31) include compounds represented by the following formulas (37-1) to (37-3).
作為上述式(32)所表示之化合物之具體例,可列舉下述式(38-1)~(38-8)所表示之結構之化合物等。 Specific examples of the compound represented by the above formula (32) include compounds represented by the following formulas (38-1) to (38-8).
作為本發明中之主體材料,可使用上述者之1種或2種以 上,該等之中,較佳為上述式(36-11)所表示之雙[2-(2-苯并噻唑基)苯酚]鋅、上述式(36-34)所表示之雙(10-羥基苯并[h]喹啉)鈹(Bebq2)、上述式(36-35)所表示之雙[2-(2-羥基苯基)-吡啶]鈹(Bepp2)。 One or two or more of the above may be used as the host material in the present invention, and among these, bis[2-(2-benzothiazolyl) represented by the above formula (36-11) is preferred. Phenol]zinc, bis(10-hydroxybenzo[h]quinoline)indole (Bebq 2 ) represented by the above formula (36-34), and bis [2-(2-) represented by the above formula (36-35) Hydroxyphenyl)-pyridine]indole (Bepp 2 ).
上述發光層之平均厚度並無特別限定,較佳為10~150nm。更佳為20~100nm。 The average thickness of the light-emitting layer is not particularly limited, but is preferably 10 to 150 nm. More preferably 20 to 100 nm.
發光層之平均厚度可藉由晶體振盪膜厚儀於成膜時測定。 The average thickness of the light-emitting layer can be measured by a crystal oscillation film thickness gauge at the time of film formation.
作為上述電洞傳輸層之材料,可使用與上述本發明之第1有機電激發光元件中之電洞傳輸層之材料相同者。 As the material of the hole transport layer, the same material as that of the hole transport layer in the first organic electroluminescence device of the present invention can be used.
又,電洞傳輸層之平均厚度之較佳值亦與上述本發明之第1有機電激發光元件之情形相同。 Further, the preferable value of the average thickness of the hole transport layer is also the same as that of the above-described first organic electroluminescent device of the present invention.
作為上述電子傳輸層之材料,可使用與上述本發明之第1有機電激發光元件中之電子傳輸層之材料相同者。 As the material of the electron transport layer, the same material as that of the electron transport layer in the first organic electroluminescence device of the present invention can be used.
又,電子傳輸層之平均厚度之較佳值亦與上述本發明之第1有機電激發光元件之情形相同。 Further, the preferable value of the average thickness of the electron transporting layer is also the same as that of the above-described first organic electroluminescent device of the present invention.
本發明之有機電激發光元件中,形成第1、第2金屬氧化物層、第2電極、發光層、電洞傳輸層、電子傳輸層之方法亦又與上述本發明之第1有機電激發光元件中之該等層之形成方法相同。 In the organic electroluminescent device of the present invention, the method of forming the first and second metal oxide layers, the second electrode, the light-emitting layer, the hole transport layer, and the electron transport layer is also in combination with the first organic charge of the present invention. The formation of the layers in the optical element is the same.
如上所述,本發明之有機電激發光元件所含之緩衝層較佳為藉由塗佈含有有機化合物之溶液而形成之層。藉由利用塗佈形成特定厚度之緩衝層,可有效地抑制於緩衝層上成膜之低分子化合物之結晶化。 As described above, the buffer layer contained in the organic electroluminescent device of the present invention is preferably a layer formed by coating a solution containing an organic compound. By forming a buffer layer having a specific thickness by coating, crystallization of a low molecular compound formed on the buffer layer can be effectively suppressed.
上述塗佈含有有機化合物之溶液之方法、用以製備含有有機化合物之溶液之溶劑、及溶劑中之有機化合物之濃度亦又與上述本發明之第1有機電激發光元件中塗佈含有有機化合物之溶液而形成緩衝層之情形之方法、及溶劑、及濃度相同。藉由塗佈成膜緩衝層,而存在於第1金屬氧化物層表面之凹凸變得平滑,因此繼而於緩衝層上成膜之低分子化合物之結晶化獲得抑制。 The method of applying the solution containing the organic compound, the solvent for preparing the solution containing the organic compound, and the concentration of the organic compound in the solvent are also coated with the organic compound in the first organic electroluminescent device of the present invention. The method of forming a buffer layer by the solution, the solvent, and the same concentration. By coating the film formation buffer layer, the unevenness on the surface of the first metal oxide layer is smooth, and thus the crystallization of the low molecular compound formed on the buffer layer is suppressed.
此種緩衝層與日本特開2012-4492號公報(專利文獻5)中所揭示之發明之不同點如上所述。 The difference between the buffer layer and the invention disclosed in Japanese Laid-Open Patent Publication No. 2012-4492 (Patent Document 5) is as described above.
上述緩衝層較佳為平均厚度為5~100nm。藉由使平均厚度 為此種範圍,可充分地發揮出抑制包含發光層之低分子化合物層之結晶化之效果。若緩衝層之平均厚度薄於5nm,則有無法使存在於第1金屬氧化物表面之凹凸充分平滑化,洩漏電流變大而無法充分發揮出形成緩衝層之效果之虞。又,若緩衝層之平均厚度厚於100nm,則驅動電壓上升而於實用上欠佳。又,於使用後述之本發明中之較佳結構之化合物作為有機化合物之情形時,緩衝層亦可充分發揮出作為電子傳輸層之功能。上述緩衝層之平均厚度更佳為10~60nm。 The buffer layer preferably has an average thickness of 5 to 100 nm. By making the average thickness For this range, the effect of suppressing the crystallization of the low molecular compound layer containing the light-emitting layer can be sufficiently exhibited. When the average thickness of the buffer layer is less than 5 nm, the unevenness of the unevenness on the surface of the first metal oxide cannot be sufficiently smoothed, and the leakage current is increased, so that the effect of forming the buffer layer cannot be sufficiently exhibited. Further, when the average thickness of the buffer layer is thicker than 100 nm, the driving voltage rises and it is practically unsatisfactory. Further, when a compound having a preferred structure in the present invention described later is used as the organic compound, the buffer layer can sufficiently exhibit the function as an electron transport layer. The average thickness of the above buffer layer is preferably from 10 to 60 nm.
緩衝層之平均厚度可藉由觸針式段差計、分光橢圓偏光儀而測定。 The average thickness of the buffer layer can be measured by a stylus type step meter and a spectroscopic ellipsometer.
本發明之第2有機電激發光元件亦可為於基板上積層有構 成有機電激發光元件之各層者。於為在基板上積層有各層者之情形時,較佳為於形成於基板上之第1電極上形成有各層者。於此情形時,本發明之有機電激發光元件可為於與具有基板之側相反之側提取光之頂部發光型者,亦可為於具有基板之側提取光之底部發光型者。 The second organic electroluminescent device of the present invention may also be laminated on a substrate. The layers of the organic electroluminescent element are formed. In the case where each layer is laminated on the substrate, it is preferable that each layer is formed on the first electrode formed on the substrate. In this case, the organic electroluminescent device of the present invention may be a top emission type that extracts light on the side opposite to the side having the substrate, or may be a bottom emission type that extracts light on the side having the substrate.
上述基板之材料、基板之平均厚度與上述本發明之第1有機 電激發光元件中之基板之材料、基板之平均厚度相同。 The material of the substrate, the average thickness of the substrate, and the first organic of the present invention described above The material of the substrate in the electroluminescent device and the average thickness of the substrate are the same.
本發明之第2有機電激發光元件中,作為形成緩衝層之有機 化合物之例子,可列舉與上述本發明之第1有機電激發光元件中之形成緩衝層之有機化合物相同者。 In the second organic electroluminescence device of the present invention, as an organic layer forming a buffer layer Examples of the compound include the same as the organic compound forming the buffer layer in the first organic electroluminescent device of the present invention.
又,本發明之第2有機電激發光元件中,形成緩衝層之有機化合物較佳為具有硼原子之有機化合物,更佳為上述式(1)所表示之含硼化合物。較佳為此種結構之含硼化合物之理由如上所述。 Further, in the second organic electroluminescent device of the present invention, the organic compound forming the buffer layer is preferably an organic compound having a boron atom, and more preferably a boron-containing compound represented by the above formula (1). The reason why the boron-containing compound of such a structure is preferable is as described above.
又,式(1)所表示之含硼化合物中之較佳結構亦與本發明之第1有機電激發光元件之情形相同。 Further, a preferred structure of the boron-containing compound represented by the formula (1) is also the same as in the case of the first organic electroluminescent device of the present invention.
上述式(1)所表示之含硼化合物可實現利用塗佈之均勻成 膜,且具有較低之HOMO、LUMO能階,因此可較佳地用作本發明之第2有機電激發光元件之材料。 The boron-containing compound represented by the above formula (1) can achieve uniform formation by coating Since the film has a low HOMO and LUMO energy level, it can be preferably used as a material of the second organic electroluminescent device of the present invention.
本發明之第2有機電激發光元件為本發明之有機電激發光 元件中緩衝層含有還原劑者,藉此可使有機電激發光元件成為發光特性優異者。此種本發明之第2有機電激發光元件中,亦較佳為於第1電極與第2電極之間依序具有第1金屬氧化物層、緩衝層、積層於該緩衝層上之包含發光層之低分子化合物層、及第2金屬氧化物層,且該緩衝層含有還原劑者。 The second organic electroluminescent device of the present invention is the organic electroluminescent light of the present invention In the element, the buffer layer contains a reducing agent, whereby the organic electroluminescent device can be made excellent in light-emitting characteristics. In the second organic electroluminescent device of the present invention, it is preferable that the first metal oxide layer, the buffer layer, and the layered on the buffer layer are sequentially provided between the first electrode and the second electrode. The layer of the low molecular compound layer and the second metal oxide layer, and the buffer layer contains a reducing agent.
如下本發明之第2較佳形態之有機電激發光元件之製造方法亦又為本發明之一,該方法係上述本發明之第2較佳形態之有機無機混合型有機電激發光元件之製造方法、即具有積層有複數層之構造之有機電激發光元件之製造方法,其特徵在於:該製造方法包括下述步驟:以使有機電激發光元件成為於第1電極與第2電極之間依序具有第1金屬氧化物層、含有還原劑之緩衝層、積層於該緩衝層上之包含發光層之低分子化合物層、及第2金屬氧化物層者之方式,積層構成有機電激發光元件之各層。 The method for producing an organic electroluminescence device according to a second preferred embodiment of the present invention is also one of the inventions, which is the manufacture of the organic-inorganic hybrid organic electroluminescent device according to the second preferred embodiment of the present invention. A method of manufacturing an organic electroluminescent device having a structure in which a plurality of layers are laminated, characterized in that the manufacturing method includes the step of causing an organic electroluminescent device to be between the first electrode and the second electrode The organic electroluminescence light is laminated to form a first metal oxide layer, a buffer layer containing a reducing agent, a low molecular compound layer including a light emitting layer laminated on the buffer layer, and a second metal oxide layer. The layers of the component.
本發明之第2較佳形態之有機電激發光元件之製造方法較佳為包括塗佈含有有機化合物之溶液而形成平均厚度為5~100nm之緩衝層之步驟。 The method for producing an organic electroluminescence device according to a second preferred embodiment of the present invention preferably comprises the step of applying a solution containing an organic compound to form a buffer layer having an average thickness of 5 to 100 nm.
上述本發明之第2較佳形態之有機電激發光元件之製造方 法只要包括上述步驟,則亦可包括其他步驟,亦可包括形成第1、第2金屬氧化物層、緩衝層、包含發光層之低分子化合物層以外之層的步驟。又,形成有機電激發光元件之各層之材料、形成方法、有機化合物、用以製備含有有機化合物之溶液之溶劑、及各層之厚度與本發明之第2有機電激發光元件相同,較佳者亦相同。 The manufacturer of the organic electroluminescent device of the second preferred embodiment of the present invention The method may include other steps as long as the above steps are included, and may include a step of forming a layer other than the first and second metal oxide layers, the buffer layer, and the low molecular compound layer including the light emitting layer. Further, a material for forming each layer of the organic electroluminescence element, a method for forming the organic compound, a solvent for preparing a solution containing the organic compound, and a thickness of each layer are the same as those of the second organic electroluminescence device of the present invention, preferably The same is true.
[本發明之第3較佳形態之有機電激發光元件] [Organic Electroluminescent Device of the Third Preferred Embodiment of the Present Invention]
本發明之第3較佳形態之有機發光元件(以下亦記作本發明之第3有 機電激發光元件)係本發明之有機發光元件中緩衝層為由含氮膜構成且平均厚度為3~150nm的層者。 An organic light-emitting device according to a third preferred embodiment of the present invention (hereinafter also referred to as a third aspect of the present invention) Electromechanical Excitation Element) The buffer layer of the organic light-emitting device of the present invention is a layer composed of a nitrogen-containing film and having an average thickness of 3 to 150 nm.
換言之,本發明之第3有機電激發光元件係具有於陽極與形成於基板上之陰極之間積層有複數層之構造的有機電激發光元件,且上述有機電激發光元件於陽極與陰極之間具有金屬氧化物層,於上述金屬氧化物層上具有由含氮膜構成且平均厚度為3~150nm之層。 In other words, the third organic electroluminescent device of the present invention has an organic electroluminescent device having a structure in which a plurality of layers are laminated between an anode and a cathode formed on a substrate, and the organic electroluminescent device is applied to the anode and the cathode. There is a metal oxide layer interposed therebetween, and the metal oxide layer has a layer composed of a nitrogen-containing film and having an average thickness of 3 to 150 nm.
含氮膜較佳為不具有電子傳輸性者。再者,此處所謂之不具有電子傳輸性,係指電子遷移率極低。具體而言,係指符合電子遷移率小於10-6cm2/Vs左右或導電率小於10-6S/m左右之任一情況。 The nitrogen-containing film is preferably one which does not have electron transport properties. Further, the term "no electron transport property" as used herein means that the electron mobility is extremely low. Specifically, it refers to any case where the electron mobility is less than about 10 -6 cm 2 /Vs or the conductivity is less than 10 -6 S/m.
本發明之第3有機電激發光元件只要為具有於陽極與形成 於基板上之陰極之間積層有複數層之構造的逆構造之有機電激發光元件,且於陽極與陰極之間具有金屬氧化物層,於該金屬氧化物層上具有由含氮膜構成且平均厚度為3~150nm之層,則其他層之層數、構成其他層之材料或積層順序並無特別限制,較佳為金屬氧化物層與含氮化合物層位於陰極與發光層之間。含氮化合物為電子注入特性優異者,具有此種層構成之有機電激發光元件具有較高之電子注入特性,成為發光效率優異之元件。 The third organic electroluminescent device of the present invention is formed to have an anode and a a reverse-structured organic electroluminescent device having a plurality of layers formed between the cathodes on the substrate, and having a metal oxide layer between the anode and the cathode, and having a nitrogen-containing film on the metal oxide layer The layer having an average thickness of 3 to 150 nm is not particularly limited as to the number of layers of the other layers, the material constituting the other layers, or the order of lamination. Preferably, the metal oxide layer and the nitrogen-containing compound layer are located between the cathode and the light-emitting layer. The nitrogen-containing compound is excellent in electron injection characteristics, and the organic electroluminescence device having such a layer structure has high electron injection characteristics and is an element excellent in luminous efficiency.
本發明之第3有機電激發光元件中所使用之含氮膜存在如 下合計4種:(1)於金屬氧化物層上由含氮化合物形成的含氮膜、(2)於金屬氧化物層上由含氮化合物形成的含高氮之膜、(3)於金屬氧化物層上藉由使含氮化合物分解而形成的含氮膜、(4)於金屬氧化物層上藉由使含氮化合物分解而形成的含高氮之膜。 The nitrogen-containing film used in the third organic electroluminescence device of the present invention is as There are four kinds in total: (1) a nitrogen-containing film formed of a nitrogen-containing compound on a metal oxide layer, (2) a high-nitrogen-containing film formed of a nitrogen-containing compound on a metal oxide layer, and (3) a metal a nitrogen-containing film formed by decomposing a nitrogen-containing compound on the oxide layer, and (4) a high-nitrogen-containing film formed by decomposing the nitrogen-containing compound on the metal oxide layer.
關於藉由形成此種膜而使有機電激發光元件之性能提高之理由,推測如下。 The reason for improving the performance of the organic electroluminescent device by forming such a film is presumed as follows.
首先,第一於含有氮原子之情形時,存在其孤電子對與基材中之金屬原子形成鍵之傾向。該金屬-氮鍵間之極化表現出較強之電子注入特性。 上述(1)~(4)全部之含氮膜均滿足上述情況。更佳為具有孤電子對之氮原子比率較高之上述(2)。 First, when the first is in the case of a nitrogen atom, there is a tendency for its lone pair to form a bond with a metal atom in the substrate. The polarization between the metal-nitrogen bonds exhibits strong electron injection characteristics. All of the nitrogen-containing films of the above (1) to (4) satisfy the above conditions. More preferably, the above-mentioned (2) has a higher nitrogen atom ratio of a lone electron pair.
上述(3)、(4)中,期待藉由關係到膜生成之分解現象而成為氮原子以高密度存在於基材上之膜,結果可期待出現多彩之金屬-氮鍵。並且,可認為其中亦存在較先前牢固之金屬-氮鍵。進而,根據分解之狀況,亦有不需要之碳等其他成分消失,藉此氮原子分率相對上升,結果實現更佳之環境的情況(4)。由於該等含氮膜中主要之氮之起源為金屬-氮鍵,故而可期待氮原子以較通常之分子之物理吸附更高之密度集聚。根據該等主要原因,可認為藉由具有此種含氮膜,而有機電激發光元件成為發光效率優異,元件驅動穩定性與元件壽命優異者。實際上,上述含氮化合物之分解所引起之現象可藉由作為表面分析方法之一之X射線光電子分光法證明。具體結果示於實施例中,但藉由使用含有氮與碳作為構成元素之化合物作為含氮化合物,進行使該化合物分解之處理,而觀測到碳:氮比(CN比)由2:1變為1:1而成為高氮比率。又,同時藉由上述處理,而觀測到氮之光譜之半高寬之增加,上述情況顯示出化學環境之擴大,亦暗示了出現更牢固的金屬-氮鍵。 In the above (3) and (4), it is expected that a film having a high density of nitrogen atoms on the substrate is formed by a decomposition phenomenon related to film formation, and as a result, a colorful metal-nitrogen bond is expected to occur. Moreover, it can be considered that there is also a stronger metal-nitrogen bond than before. Further, depending on the state of decomposition, there is a case where other components such as carbon which are not required are eliminated, whereby the nitrogen atomic ratio is relatively increased, and as a result, a better environment is achieved (4). Since the origin of the main nitrogen in the nitrogen-containing films is a metal-nitrogen bond, it is expected that the nitrogen atoms are concentrated at a higher density than the physical adsorption of the usual molecules. Based on these factors, it is considered that the organic electroluminescence device has excellent light-emitting efficiency and excellent device drive stability and device life by having such a nitrogen-containing film. In fact, the phenomenon caused by the decomposition of the above nitrogen-containing compound can be confirmed by X-ray photoelectron spectroscopy which is one of the surface analysis methods. The specific results are shown in the examples, but by using a compound containing nitrogen and carbon as a constituent element as a nitrogen-containing compound, a treatment for decomposing the compound is carried out, and it is observed that the carbon:nitrogen ratio (CN ratio) is changed from 2:1. It is a high nitrogen ratio of 1:1. At the same time, by the above treatment, an increase in the half-height width of the spectrum of nitrogen is observed, which shows an enlargement of the chemical environment and implies a stronger metal-nitrogen bond.
因此,可認為由含氮膜構成之層之基底為含有金屬元素之膜的情況亦非常有助於如上所述之本發明之第3有機電激發光元件所發揮之效果的表現。 Therefore, it is considered that the case where the base of the layer composed of the nitrogen-containing film is a film containing a metal element contributes greatly to the performance of the third organic electroluminescent device of the present invention as described above.
上述(1)、(2)之含氮膜為形成於金屬氧化物層上之由含氮 化合物構成之膜、即於不使含氮化合物分解之情況下形成膜者。上述(2)之含氮膜係使用氮原子數相對於構成含氮化合物之總原子數的比例較高者作為含氮化合物而形成者。 The nitrogen-containing film of the above (1) and (2) is a nitrogen-containing film formed on the metal oxide layer. A film composed of a compound, that is, a film formed without decomposing a nitrogen-containing compound. The nitrogen-containing film of the above (2) is formed by using a nitrogen-containing compound as a ratio of the number of nitrogen atoms to the total number of atoms constituting the nitrogen-containing compound.
上述(1)、(2)之含氮膜之形成方法並無特別限制,可較佳地使用將含氮化合物之溶液塗佈於金屬氧化物層上後,使溶劑揮發之方法。 The method for forming the nitrogen-containing film of the above (1) and (2) is not particularly limited, and a method of volatilizing a solvent after applying a solution containing a nitrogen-containing compound onto a metal oxide layer can be preferably used.
上述(3)、(4)之含氮膜為於金屬氧化物層上藉由使含氮化 合物分解而形成之膜,含氮化合物之一部分中亦可殘存未分解者。較佳為含氮化合物之全部分解。 The nitrogen-containing film of the above (3) and (4) is formed by nitriding on the metal oxide layer. The film formed by decomposition of the compound may also remain undecomposed in one of the nitrogen-containing compounds. Preferably, all of the nitrogen-containing compound is decomposed.
上述(3)、(4)之含氮膜之形成方法並無特別限制,可較佳地使用將含氮化合物之溶液塗佈於金屬氧化物層上後,使含氮化合物分解而形成的方法。 The method for forming the nitrogen-containing film of the above (3) and (4) is not particularly limited, and a method of forming a solution containing a nitrogen-containing compound on a metal oxide layer and decomposing the nitrogen-containing compound can be preferably used. .
上述含氮膜較佳為藉由包括於金屬氧化物層上塗佈含有含 氮化合物之溶液之步驟的方法而形成者。藉由利用包括此種步驟之方法形成含氮膜,而具有金屬氧化物層之有機電激發光元件可獲得洩漏電流之抑制、及均勻之面發光。 Preferably, the nitrogen-containing film is coated on the metal oxide layer by containing Formed by the method of the step of the solution of the nitrogen compound. By forming a nitrogen-containing film by a method including such a step, the organic electroluminescent device having the metal oxide layer can suppress leakage current and uniform surface light emission.
其理由與上述本發明之第1有機發光元件中,藉由具有藉由塗佈含有有機化合物之溶液而形成之緩衝層,可獲得洩漏電流之抑制、及均勻之面發光的理由相同。 The reason and the first organic light-emitting device of the present invention described above have the same reason for suppressing leakage current and uniform surface light emission by having a buffer layer formed by applying a solution containing an organic compound.
上述含氮膜較佳為含有氮元素與碳元素作為構成膜之元 素,構成該膜之氮原子與碳原子之存在比率滿足 The above nitrogen-containing film preferably contains nitrogen and carbon as elements constituting the film. The ratio of the existence of the nitrogen atom and the carbon atom constituting the film satisfies
氮原子數/(氮原子數+碳原子數)>1/8 Number of nitrogen atoms / (number of nitrogen atoms + number of carbon atoms) > 1/8
之關係。 Relationship.
如此,若含氮膜中之氮原子數之比例較高,則金屬-氮鍵之總數增加,結果藉由更強之極化而成為電子注入特性更高者。含氮膜中之氮原子數/(氮原子數+碳原子數)更佳為大於1/5。 As described above, when the ratio of the number of nitrogen atoms in the nitrogen-containing film is high, the total number of metal-nitrogen bonds increases, and as a result, the electron injection characteristics are higher by the stronger polarization. The number of nitrogen atoms in the nitrogen-containing film / (number of nitrogen atoms + number of carbon atoms) is more preferably more than 1/5.
含氮膜中之氮元素、碳元素之存在比率可藉由光電子分光法(XPS)測定。 The ratio of the presence of nitrogen and carbon in the nitrogen-containing film can be determined by photoelectron spectroscopy (XPS).
上述(3)、(4)之含氮膜只要為於金屬氧化物層上藉由使含 氮化合物分解而形成者,則使含氮化合物分解之方法並無特別限制,較佳為藉由利用加熱使含氮化合物分解而形成者。 The nitrogen-containing film of the above (3) and (4) is only required to be contained on the metal oxide layer. When the nitrogen compound is decomposed and formed, the method of decomposing the nitrogen-containing compound is not particularly limited, and it is preferably formed by decomposing the nitrogen-containing compound by heating.
若藉由加熱使含氮化合物分解,則可將金屬氧化物層中之金屬原子與氮原子之鍵結強化,藉此有機電激發光元件成為更長期地發揮出較高之驅動穩定性者。 When the nitrogen-containing compound is decomposed by heating, the bonding between the metal atom and the nitrogen atom in the metal oxide layer can be strengthened, whereby the organic electroluminescent device can exhibit a higher driving stability for a longer period of time.
因此,上述含氮膜最佳為利用藉由在金屬氧化物層上塗佈含 有含氮化合物之溶液後,藉由加熱使含氮化合物分解而形成的方法所形成者,藉由以此種方法形成,可獲得如下效果:獲得洩漏電流之抑制及均勻之面發光的效果、及使有機電激發光元件成為更長期地發揮出較高之驅動穩定性者的效果。 Therefore, the above nitrogen-containing film is preferably utilized by coating a metal oxide layer. When a solution containing a nitrogen-containing compound is formed by a method in which a nitrogen-containing compound is decomposed by heating, by the formation of such a method, the following effects can be obtained: suppression of leakage current and effect of uniform surface light emission, Further, the organic electroluminescence device is effective in that it exhibits high driving stability for a longer period of time.
如下有機電激發光元件之製造方法亦又為本發明之一,其係上述HOILED元件之製造方法、即具有於陽極與形成於基板上之陰極之間積層有複數層之構造的有機電激發光元件之製造方法,且上述製造方法包括於金屬氧化物層上塗佈含有含氮化合物之溶液的步驟、及於使該含氮化合物分解之溫度下進行加熱處理而製造由本發明之含氮膜構成之層的步驟。 The method for producing an organic electroluminescence element according to the present invention is also a method for producing the above HOILED element, that is, an organic electroluminescence light having a structure in which a plurality of layers are laminated between an anode and a cathode formed on a substrate. A method for producing a device, comprising the steps of: applying a solution containing a nitrogen-containing compound to a metal oxide layer, and heat-treating at a temperature at which the nitrogen-containing compound is decomposed to produce a nitrogen-containing film of the present invention. The steps of the layer.
用以使上述含氮化合物分解之加熱處理較佳為於大氣下進 行。藉由在大氣下進行,可充分促進含氮化合物之分解,使有機電激發光元件成為長期發揮出更高驅動穩定性者。 The heat treatment for decomposing the above nitrogen-containing compound is preferably carried out under the atmosphere Row. By performing in the atmosphere, the decomposition of the nitrogen-containing compound can be sufficiently promoted, and the organic electroluminescent device can exhibit a higher driving stability for a long period of time.
用以使上述含氮化合物分解之加熱處理之溫度較佳為80~200℃,時間較佳為1~30分鐘。 The heat treatment for decomposing the nitrogen-containing compound is preferably 80 to 200 ° C, and the time is preferably 1 to 30 minutes.
加熱處理之溫度或時間只要於上述範圍內根據含氮化合物之種類而適當設定即可。例如於使用下述主鏈骨架上具有聚伸烷基亞胺結構之聚合物作為含氮化合物之情形時,聚合物之分子量越大分解溫度越高,因此可考慮聚合物之分子量,以後述實施例中之加熱處理條件為參考,適當設定加熱處理之溫度、及時間。 The temperature or time of the heat treatment may be appropriately set depending on the type of the nitrogen-containing compound within the above range. For example, when a polymer having a polyalkyleneimine structure on a main chain skeleton is used as a nitrogen-containing compound, the molecular weight of the polymer is higher as the decomposition temperature is higher, so that the molecular weight of the polymer can be considered, which will be described later. The heat treatment conditions in the examples are reference, and the temperature and time of the heat treatment are appropriately set.
含氮化合物是否分解可藉由X射線光電子分光法(XPS)測定而確認。 Whether or not the nitrogen-containing compound is decomposed can be confirmed by X-ray photoelectron spectroscopy (XPS).
上述含氮膜亦可為在進行於金屬氧化物層上使含氮化合物 分解之步驟後進行利用乙醇、甲氧基乙醇等有機溶劑將膜之表面洗淨之步驟而形成者。 The above nitrogen-containing film may also be a nitrogen-containing compound on the metal oxide layer. After the decomposition step, a step of washing the surface of the film with an organic solvent such as ethanol or methoxyethanol is carried out.
作為上述含氮化合物,例如可列舉:聚乙烯基吡咯啶酮之類 的吡咯啶酮類、聚吡咯之類的吡咯類或聚苯胺之類的苯胺類、或聚乙烯基吡啶之類的吡啶類,同樣可列舉:吡咯啶類、咪唑類、哌啶類、嘧啶類、三類等具有含氮雜環之化合物或胺化合物。其中,較佳為氮含有率較多之化合物,較佳為多胺類或含三環之化合物。 Examples of the nitrogen-containing compound include pyrrolidone such as polyvinylpyrrolidone, aniline such as polypyrrole or polyaniline, or pyridine such as polyvinylpyridine. Also, the pyrrolidines, imidazoles, piperidines, pyrimidines, and the like A compound having a nitrogen-containing hetero ring or an amine compound. Among them, a compound having a high nitrogen content is preferable, and a polyamine or a tri-containing compound is preferred. a compound of the ring.
多胺類由於氮原子數相對於構成化合物之總原子數的比率較高,故而使有機電激發光元件成為具有較高之電子注入性與驅動穩定性者,就此方面而言較佳。 Since the ratio of the number of nitrogen atoms to the total number of atoms of the constituent compound is high, the polyamine has a high electron injecting property and driving stability, and is preferable in this respect.
作為多胺類,較佳為可藉由塗佈而形成層者,可為低分子化合物,亦可為高分子化合物。作為低分子化合物,可較佳地使用二乙三胺之類的聚伸烷基多胺,高分子化合物中,可較佳地使用具有聚伸烷基亞胺結構之聚合物。尤佳為聚乙亞胺。 The polyamine is preferably a layer which can be formed by coating, and may be a low molecular compound or a polymer compound. As the low molecular compound, a polyalkylene polyamine such as diethylenetriamine can be preferably used. Among the polymer compounds, a polymer having a polyalkyleneimine structure can be preferably used. Especially preferred is polyethyleneimine.
再者,此處所謂低分子化合物,意指非高分子化合物(聚合物)之化合物,而未必意指分子量較低之化合物。 Further, the term "low molecular compound" as used herein means a compound of a non-polymer compound (polymer), and does not necessarily mean a compound having a relatively low molecular weight.
上述多胺類中,使用主鏈骨架上具有聚伸烷基亞胺結構之直 鏈狀結構之聚合物的形態為本發明之較佳實施形態之一。 In the above polyamines, a straight chain alkylimine structure is used on the backbone of the main chain. The form of the polymer of the chain structure is one of the preferred embodiments of the present invention.
多胺類中,藉由使用此種結構之聚合物,而成為元件驅動穩定性與元件壽命更優異者。推測其原因在於,此種主鏈骨架上具有聚伸烷基亞胺結構之聚合物為直鏈狀結構,因而為固體,藉此於裝置中穩定地存在。 Among the polyamines, by using a polymer having such a structure, component driving stability and element life are more excellent. It is presumed that the reason is that the polymer having a polyalkyleneimine structure on the main chain skeleton has a linear structure and thus is solid, thereby being stably present in the apparatus.
由此種主鏈骨架上具有聚伸烷基亞胺結構之直鏈狀結構之聚合物於金屬氧化物層上形成的含氮膜成為上述(1)之含氮膜。 The nitrogen-containing film formed on the metal oxide layer by the polymer having a linear structure of a polyalkyleneimine structure on the main chain skeleton is the nitrogen-containing film of the above (1).
再者,主鏈骨架上具有聚伸烷基亞胺結構之直鏈狀結構之聚合物只要為形成主鏈骨架之聚伸烷基亞胺結構之大部分連結成直鏈狀者即可,亦可 為一部分中具有分支結構者。較佳為形成主鏈骨架之聚伸烷基亞胺結構之80%以上連結成直鏈狀者,更佳為90%以上連結成直鏈狀者,進而較佳為95%以上連結成直鏈狀者,最佳為形成主鏈骨架之聚伸烷基亞胺結構之100%連結成直鏈狀者。 Further, the polymer having a linear structure having a polyalkylene structure on the main chain skeleton may be a linear one of a polyalkylenimine structure forming a main chain skeleton, and can For those who have a branch structure in one part. Preferably, 80% or more of the polyalkylene imine structure forming the main chain skeleton is bonded to a linear chain, more preferably 90% or more is bonded to a linear chain, and more preferably 95% or more is bonded to a linear chain. Preferably, it is preferably 100% of the polyalkylene structure forming the backbone skeleton to be linearly linked.
上述具有聚伸烷基亞胺結構之聚合物之聚伸烷基亞胺結構 較佳為由碳數2~4之伸烷基亞胺形成之結構。更佳為由碳數2或3之伸烷基亞胺形成之結構。 Polyalkylene imine structure of the above polymer having a polyalkyleneimine structure It is preferably a structure formed of an alkyleneimine having 2 to 4 carbon atoms. More preferably, it is a structure formed of a stretched alkylimine having 2 or 3 carbon atoms.
上述具有聚伸烷基亞胺結構之聚合物只要為主鏈骨架上具 有聚伸烷基亞胺結構者即可,亦可為具有聚伸烷基亞胺結構以外之結構之共聚物。 The above polymer having a polyalkyleneimine structure is only required to have a main chain skeleton It may be a polyalkyleneimine structure or a copolymer having a structure other than the polyalkyleneimine structure.
於上述具有聚伸烷基亞胺結構之聚合物具有聚伸烷基亞胺 結構以外之結構之情形時,作為成為聚伸烷基亞胺結構以外之結構之原料的單體,例如可列舉:乙烯、丙烯、丁烯、乙炔、丙烯酸、苯乙烯、或乙烯基咔唑等,可使用該等之1種或2種以上。又,亦可較佳地使用該等單體之碳原子上所鍵結之氫原子被取代為其他有機基之結構者。作為與氫原子進行取代之其他有機基,例如可列舉:可含有選自由氧原子、氮原子、硫原子所組成之群中之至少1種原子的碳數1~10之烴基等。 The above polymer having a polyalkyleneimine structure has a polyalkyleneimine In the case of a structure other than the structure, examples of the monomer which is a raw material for the structure other than the polyalkylene imine structure include ethylene, propylene, butylene, acetylene, acrylic acid, styrene, or vinyl carbazole. One or two or more of these may be used. Further, it is also preferred to use a structure in which a hydrogen atom bonded to a carbon atom of the monomer is substituted with another organic group. Examples of the other organic group to be substituted with a hydrogen atom include a hydrocarbon group having 1 to 10 carbon atoms and at least one atom selected from the group consisting of an oxygen atom, a nitrogen atom and a sulfur atom.
上述具有聚伸烷基亞胺結構之聚合物於形成聚合物之主鏈 骨架之單體成分100質量%中,形成聚伸烷基亞胺結構之單體較佳為50質量%以上。更佳為66質量%以上,進而較佳為80質量%以上。最佳為形成聚伸烷基亞胺結構之單體為100質量%、即具有聚伸烷基亞胺結構之聚合物為聚伸烷基亞胺之均聚物。 The above polymer having a polyalkyleneimine structure is formed in the main chain of the polymer In 100% by mass of the monomer component of the skeleton, the monomer forming the polyalkyleneimine structure is preferably 50% by mass or more. More preferably, it is 66% by mass or more, and further preferably 80% by mass or more. The polymer which is preferably a monomer having a polyalkyleneimine structure is 100% by mass, that is, a polymer having a polyalkyleneimine structure is a homopolymer of a polyalkyleneimine.
上述具有聚伸烷基亞胺結構之聚合物較佳為重量平均分子 量為100000以下。使用此種重量平均分子量者,進行使聚合物分解之溫度下之加熱處理而形成層,藉此可使有機電激發光元件成為驅動穩定性更優 異者。更佳為10000以下,進而較佳為100~1000。又,於具有聚伸烷基亞胺結構之聚合物為上述直鏈狀結構之聚合物之情形時,聚合物之重量平均分子量更佳為250000以下,進而較佳為10000~50000。 The above polymer having a polyalkyleneimine structure is preferably a weight average molecule The amount is 100,000 or less. When such a weight average molecular weight is used, a layer is formed by heat treatment at a temperature at which the polymer is decomposed, whereby the organic electroluminescent device can be made to have better driving stability. Different. More preferably, it is 10,000 or less, and further preferably 100 to 1000. Further, in the case where the polymer having a polyalkyleneimine structure is a polymer having a linear structure, the weight average molecular weight of the polymer is more preferably 250,000 or less, still more preferably 10,000 to 50,000.
重量平均分子量可於以下條件下藉由GPC(凝膠滲透層析儀)測定而求出。 The weight average molecular weight can be determined by GPC (gel permeation chromatography) measurement under the following conditions.
測定機器:Waters Alliance(2695)(商品名,Waters公司製造) Measuring machine: Waters Alliance (2695) (trade name, manufactured by Waters Corporation)
分子量管柱:將TSKguard column(保護管柱)α、TSKgel α-3000、TSKgel α-4000、TSKgel α-5000(均為東曹公司製造)串列連接而使用 Molecular weight column: TSKguard column (protective column) α, TSKgel α-3000, TSKgel α-4000, TSKgel α-5000 (both manufactured by Tosoh Corporation) are connected in series.
溶離液:於100mM硼酸水溶液14304g中混合50mM氫氧化鈉水溶液96g與乙腈3600g而成之溶液 Eluent: a solution of 96 g of a 50 mM aqueous sodium hydroxide solution and 3,600 g of acetonitrile in 14304 g of a 100 mM aqueous boric acid solution.
校準曲線用標準物質:聚乙二醇(東曹公司製造) Standard material for calibration curve: polyethylene glycol (manufactured by Tosoh Corporation)
測定方法:將測定對象物以使固形物成分成為約0.2質量%之方式溶解於溶離液中,將經過濾器過濾者作為樣品而測定分子量。 In the measurement method, the object to be measured is dissolved in the eluate so that the solid content is about 0.2% by mass, and the molecular weight is measured by using the filter as a sample.
作為上述含三環之化合物,適宜為三聚氰胺或胍胺類, 其原因在於,其為含氮之環狀化合物,氮原子數相對於構成化合物之總原子數的比率較高,且為剛性。於在金屬氧化物層上形成由三聚氰胺或胍胺類構成之膜之情形時,成為上述(2)之含高氮之膜。 As the above three The compound of the ring is preferably melamine or decylamine because it is a nitrogen-containing cyclic compound, and the ratio of the number of nitrogen atoms to the total number of atoms of the constituent compound is high and rigidity. When a film made of melamine or decylamine is formed on the metal oxide layer, it is a film containing the high nitrogen of the above (2).
作為上述含三環之化合物,除三聚氰胺或苯并胍胺/乙 胍等胍胺類以外,亦可使用經羥甲基化之三聚氰胺或胍胺類、三聚氰胺樹脂/胍胺樹脂等具有三聚氰胺/胍胺骨架之化合物之1種或2種以上,該等之中,就構成化合物之全部原子中之氮原子之比例較高之方面而言,較佳為三聚氰胺。 As the above three a compound of a ring, other than melamine or benzoguanamine/acetamidine In addition to the guanamine, one or more compounds having a melamine/melamine skeleton such as melamine or melamine, a melamine resin/melamine resin, or the like may be used. The melamine is preferred in that the proportion of the nitrogen atoms in all the atoms constituting the compound is high.
又,作為上述具有含氮雜環之化合物或胺化合物,亦可較佳 地使用具有下述式(39)~(47)所表示之結構之重複單元之聚合物或式(48)之三乙胺、式(49)之乙二胺。 Further, as the above compound having a nitrogen-containing hetero ring or an amine compound, it is also preferred A polymer having a repeating unit of the structure represented by the following formulas (39) to (47), a triethylamine of the formula (48), and an ethylenediamine of the formula (49) are used.
又,若於金屬氧化物層上使該等含氮化合物分解,則成為上 述(3)之含氮膜或(4)之含高氮之膜。可認為藉由使用如多胺類或含三環之化合物等之含氮比例較高之化合物作為含氮化合物,可使含氮化合物之分解物更緻密地堆積於金屬氧化物層上。此種金屬氧化物上之含氮之薄膜亦為本專利之發明之一。含氮之薄膜進而如下所述。 Further, when the nitrogen-containing compound is decomposed on the metal oxide layer, the nitrogen-containing film of the above (3) or the high-nitrogen-containing film of (4) is obtained. Can be considered by using, for example, polyamines or As the nitrogen-containing compound, a compound having a high nitrogen content such as a ring compound can cause the decomposition product of the nitrogen-containing compound to be more densely deposited on the metal oxide layer. The nitrogen-containing film on such a metal oxide is also one of the inventions of this patent. The nitrogen-containing film is further described below.
本發明中之含氮膜之平均厚度為3~150nm。若含氮膜為此 種平均厚度,則可良好地發揮出具有上述含氮膜之效果。含氮膜之平均厚度較佳為5~100nm。更佳為5~50nm。尤其於為含氮化合物分解而成之含氮膜之情形時,較佳為5~100nm,更佳為5~50nm。 The nitrogen-containing film of the present invention has an average thickness of 3 to 150 nm. If the nitrogen film is used for this purpose The average thickness is excellent in that the effect of having the above nitrogen-containing film can be exhibited. The average thickness of the nitrogen-containing film is preferably from 5 to 100 nm. More preferably 5 to 50 nm. In particular, in the case of a nitrogen-containing film in which a nitrogen-containing compound is decomposed, it is preferably 5 to 100 nm, more preferably 5 to 50 nm.
含氮膜之平均厚度可藉由接觸式段差計於成膜時測定。接觸式段差計於極薄膜之測定時很大程度上依賴於測定環境,測定值之不均變大。因此,測定本專利內之平均厚度時係由複數次測定之平均值所決定。 The average thickness of the nitrogen-containing film can be measured by a contact step meter at the time of film formation. The contact type step meter largely depends on the measurement environment in the measurement of the polar film, and the variation in the measured value becomes large. Therefore, the determination of the average thickness in this patent is determined by the average of a number of measurements.
本發明之第3有機電激發光元件較佳為具有陽極及陰極、以 及由上述陽極與上述陰極所夾持之1層或複數層之有機化合物層,於上述陰極與上述有機化合物層之間具有金屬氧化物層,進而於上述金屬氧化物層與上述有機化合物層之間具有由本發明之含氮膜構成之層。此處,有機化合物層為包含發光層,且視需要此外亦包含電子傳輸層或電洞傳輸層之層。 The third organic electroluminescent device of the present invention preferably has an anode and a cathode, And an organic compound layer of one or more layers sandwiched between the anode and the cathode, having a metal oxide layer between the cathode and the organic compound layer, and further between the metal oxide layer and the organic compound layer There is a layer composed of the nitrogen-containing film of the present invention. Here, the organic compound layer is a layer including a light-emitting layer and, if necessary, an electron transport layer or a hole transport layer.
其中,本發明之第3有機電激發光元件較佳為於基板上鄰接形成陰極,於陽極與陰極之間具有金屬氧化物層之有機無機混合型有機電激發光元件,且具有發光層與陽極,於陰極與發光層之間具有電子注入層及視需要之電子傳輸層,於陽極與發光層之間具有電洞傳輸層及/或電洞注入層的構成之元件。本發明之第3有機電激發光元件亦可於該等各層之間具有其他層,但較佳為僅由該等各層構成之元件。即,較佳為依序鄰接積層陰極、電子注入層、視需要之電子傳輸層、發光層、電洞傳輸層及/或電洞注入層、陽極之各層而成之元件。再者,該等各層可為由1層構成者,亦可為由2層以上構成者。 Preferably, the third organic electroluminescent device of the present invention is an organic-inorganic hybrid organic electroluminescent device having a metal oxide layer between the anode and the cathode, and having a light-emitting layer and an anode. An electron injection layer and an electron transport layer as needed between the cathode and the light-emitting layer, and an element having a hole transport layer and/or a hole injection layer between the anode and the light-emitting layer. The third organic electroluminescent device of the present invention may have other layers between the layers, but is preferably an element composed only of the layers. That is, it is preferably an element in which the laminated cathode, the electron injecting layer, the optional electron transporting layer, the light emitting layer, the hole transporting layer, and/or the hole injecting layer and the anode are sequentially adjacent to each other. Further, each of the layers may be composed of one layer, or may be composed of two or more layers.
如上所述,含氮膜由於電子注入特性優異,故而較佳為用於電子注入側、即陰極側。又,如下所述,金屬氧化物層較佳為作為陰極之一部分或電子注入層之一層及/或陽極之一部分或電洞注入層之一層而積層。 As described above, since the nitrogen-containing film is excellent in electron injection characteristics, it is preferably used for the electron injection side, that is, the cathode side. Further, as described below, the metal oxide layer is preferably laminated as a part of the cathode or a layer of the electron injecting layer and/or a part of the anode or a layer of the hole injecting layer.
上述構成之有機電激元件中,於元件不具有電子傳輸層之情形時,電子注入層與發光層鄰接。又,於元件僅具有電洞傳輸層、電洞注入層之任一者之情形時,將該一者之層鄰接於發光層與陽極而積層,於元件具有電洞傳輸層與電洞注入層兩者之情形時,以發光層、電洞傳輸層、電洞注入層、陽極之順序將該等層鄰接積層。 In the organic electro-active element having the above configuration, when the element does not have an electron-transporting layer, the electron injecting layer is adjacent to the light-emitting layer. Further, when the element has only one of a hole transport layer and a hole injection layer, the layer of the one layer is laminated adjacent to the light-emitting layer and the anode, and the element has a hole transport layer and a hole injection layer. In the case of both, the layers are adjacent to each other in the order of the light-emitting layer, the hole transport layer, the hole injection layer, and the anode.
本發明之第3有機電激發光元件中,作為形成發光層之材 料,可使用通常可用作發光層之材料之任一種化合物,可為低分子化合物,亦可為高分子化合物,亦可將該等混合使用。 In the third organic electroluminescence device of the present invention, as a material for forming a light-emitting layer For the material, any compound which is generally used as a material for the light-emitting layer may be used, and it may be a low molecular compound or a high molecular compound, or may be used in combination.
再者,本發明中所謂低分子材料,意指非高分子材料(聚合物)之材料,而未必意指分子量較低之有機化合物。 Further, the term "low molecular material" as used in the present invention means a material of a non-polymer material (polymer), and does not necessarily mean an organic compound having a relatively low molecular weight.
作為形成上述發光層之高分子材料,例如可列舉:上述本發 明之第1有機發光元件中作為形成緩衝層之有機化合物之例子所記載之化合物中聚乙亞胺(PEI)除外之其以外之化合物、或進而日本特願2010-230995號、日本特願2011-6457號中所記載之硼化合物系高分子材料等。 Examples of the polymer material forming the light-emitting layer include the above-mentioned present invention. In the first organic light-emitting device of the first embodiment, the compound described in the example of the organic compound forming the buffer layer is a compound other than the polyethyleneimine (PEI), or the Japanese Patent Application No. 2010-230995, Japanese Patent Application No. 2011- The boron compound described in No. 6457 is a polymer material or the like.
作為形成上述發光層之低分子材料,例如可使用與上述本發 明之第1有機發光元件中可用作發光層之材料的低分子化合物相同者。 As the low molecular material forming the above light-emitting layer, for example, the above-mentioned hair can be used The low molecular compound which can be used as the material of the light-emitting layer in the first organic light-emitting element of the same is the same.
上述發光層之平均厚度並無特別限定,較佳為與上述本發明 之第1有機發光元件之發光層的平均厚度相同。 The average thickness of the light-emitting layer is not particularly limited, and is preferably the same as the above invention. The average thickness of the light-emitting layer of the first organic light-emitting element is the same.
於本發明之第3有機電激發光元件具有電子傳輸層之情形 時,作為其材料,可使用通常可用作電子傳輸層之材料之任一種化合物,亦可將該等混合使用。 In the case where the third organic electroluminescent device of the present invention has an electron transport layer In the case of the material, any of the compounds which are generally used as the material of the electron transport layer may be used, or these may be used in combination.
作為可用作電子傳輸層之材料之化合物之例子,可列舉與上述可用作本發明之第1有機發光元件中之電子傳輸層之材料的低分子化合物相同之化合物,較佳之化合物亦相同。 Examples of the compound which can be used as the material of the electron transporting layer include the same compounds as the low molecular weight compound which can be used as the material of the electron transporting layer in the first organic light emitting device of the present invention, and preferred compounds are also the same.
於本發明之第3有機電激發光元件具有電洞傳輸層之情形 時,用作電洞傳輸層之電洞傳輸性有機材料可單獨或組合使用各種p型之高分子材料或、各種p型之低分子材料。 In the case where the third organic electroluminescent device of the present invention has a hole transport layer In the case of the hole transporting organic material used as the hole transporting layer, various p-type polymer materials or various p-type low molecular materials may be used singly or in combination.
作為p型之高分子材料(有機聚合物),例如可列舉:聚芳基胺、茀-芳基胺共聚物、茀-聯噻吩共聚物、聚(N-乙烯基咔唑)、聚乙烯基芘、聚乙烯基蒽、聚噻吩、聚烷基噻吩、聚己基噻吩、聚(對苯乙炔)、聚噻吩乙炔(polythienylenevinylene)、芘甲醛樹脂、乙基咔唑甲醛樹脂或其衍生物等。 Examples of the p-type polymer material (organic polymer) include a polyarylamine, a fluorene-arylamine copolymer, a fluorene-biphenylene copolymer, a poly(N-vinylcarbazole), and a polyvinyl group. Anthracene, polyvinyl hydrazine, polythiophene, polyalkylthiophene, polyhexylthiophene, poly(p-phenylacetylene), polythienylenevinylene, hydrazine formaldehyde resin, ethyl carbazole formaldehyde resin or derivatives thereof.
又,該等化合物亦可以與其他化合物之混合物之形式使用。作為一例,可列舉:作為含有聚噻吩之混合物的聚(3,4-乙二氧基噻吩/苯乙烯磺酸)(PEDOT/PSS)等。 Further, the compounds can also be used in the form of a mixture with other compounds. As an example, poly(3,4-ethylenedioxythiophene/styrenesulfonic acid) (PEDOT/PSS) which is a mixture containing polythiophene, etc. are mentioned.
作為上述p型之低分子材料,可列舉與上述本發明之第1 有機發光元件中用作電洞傳輸層之材料的低分子化合物相同之化合物。 As the p-type low molecular material, the first aspect of the present invention can be cited. The same compound as the low molecular compound used as the material of the hole transport layer in the organic light-emitting element.
於本發明之第3有機電激發光元件具有電子傳輸層或電洞 傳輸層之情形時,該等層之平均厚度並無特別限定,較佳為與上述本發明之第1有機發光元件中之電子傳輸層或電洞傳輸層之平均厚度相同。 The third organic electroluminescent device of the present invention has an electron transport layer or a hole In the case of the transport layer, the average thickness of the layers is not particularly limited, and is preferably the same as the average thickness of the electron transport layer or the hole transport layer in the first organic light-emitting device of the present invention.
電子傳輸層或電洞傳輸層之平均厚度於低分子化合物之情形時可藉由晶體振盪膜厚儀測定,於高分子化合物之情形時可藉由接觸式段差計測定。 The average thickness of the electron transport layer or the hole transport layer can be measured by a crystal oscillator film thickness meter in the case of a low molecular compound, and can be measured by a contact type step meter in the case of a polymer compound.
本發明之第3有機電激發光元件於陰極至發光層之間、陽極 至發光層之間之任一處或兩處具有金屬氧化物層,較佳為於陰極至發光層之間與發光層至陽極之間之兩處具有金屬氧化物層。若將陰極至發光層之間之金屬氧化物層設為第1金屬氧化物層,將陽極至發光層之間之金屬氧化物層設為第2金屬氧化物層來表示本發明之第3有機電激發光元件之較佳之元件構成之一例,則為依序鄰接積層有陰極、第1金屬氧化物層、由含氮膜構成之層、發光層、電洞傳輸層、第2金屬氧化物層、陽極之構成。 再者,亦可於由含氮膜構成之層與發光層之間視需要具有電子傳輸層。關 於金屬氧化物層之重要性,第1金屬氧化物層之重要性較高,第2金屬氧化物層亦可經最低未占分子軌域極深之有機材料、例如HATCN、F4TCNQ等置換。 The third organic electroluminescent device of the present invention has a metal oxide layer between the cathode and the light-emitting layer and between the anode and the light-emitting layer, preferably between the cathode and the light-emitting layer and the light-emitting layer. There are metal oxide layers at two places between the anodes. When the metal oxide layer between the cathode and the light-emitting layer is the first metal oxide layer, and the metal oxide layer between the anode and the light-emitting layer is the second metal oxide layer, the third aspect of the present invention is shown. An example of a preferred element configuration of the electromechanical excitation device is a layer in which a cathode, a first metal oxide layer, a layer composed of a nitrogen-containing film, a light-emitting layer, a hole transport layer, and a second metal oxide layer are sequentially laminated. The composition of the anode. Further, an electron transport layer may be provided between the layer composed of the nitrogen-containing film and the light-emitting layer as needed. Regarding the importance of the metal oxide layer, the first metal oxide layer is of high importance, and the second metal oxide layer can also be replaced by an organic material having a minimum unoccupied molecular orbital depth, such as HATCN, F 4 TCNQ, or the like. .
上述第1金屬氧化物層、第2金屬氧化物層之材料或層之構 成、及層之平均厚度與上述本發明之第1有機發光元件中者相同。 The material or layer structure of the first metal oxide layer and the second metal oxide layer The average thickness of the layer and the layer is the same as that of the first organic light-emitting device of the present invention.
本發明之第3有機發光元件中,陽極及陰極之材料或平均厚 度與上述本發明之第1有機發光元件中者相同。 In the third organic light-emitting device of the present invention, the material of the anode and the cathode or the average thickness The degree is the same as that of the first organic light-emitting device of the present invention described above.
本發明之第3有機電激發光元件為本發明之有機電激發光 元件中緩衝層為由含氮膜構成且平均厚度為3~150nm之層者,藉此可使有機電激發光元件成為發光效率及壽命優異者。 The third organic electroluminescent device of the present invention is the organic electroluminescent light of the present invention In the element, the buffer layer is a layer composed of a nitrogen-containing film and having an average thickness of 3 to 150 nm, whereby the organic electroluminescence device can be excellent in luminous efficiency and life.
如下本發明之第3較佳形態之有機電激發光元件之製造方法亦又為本發明之一,該製造方法係上述本發明之第3較佳形態之有機無機混合型有機電激發光元件之製造方法、即具有積層有複數層之構造之有機電激發光元件之製造方法,其特徵在於:該製造方法包括下述步驟:以使有機電激發光元件成為於第1電極與第2電極之間依序具有金屬氧化物層、積層於該金屬氧化物層上之由含氮膜構成之層者之方式,積層構成有機電激發光元件之各層,該積層步驟包括形成平均厚度為3~150nm之含氮膜的步驟。 The method for producing an organic electroluminescence device according to a third preferred embodiment of the present invention is also one of the inventions, and the method for producing the organic-inorganic hybrid organic electroluminescent device according to the third preferred embodiment of the present invention A manufacturing method, that is, a method of manufacturing an organic electroluminescence device having a structure in which a plurality of layers are laminated, characterized in that the manufacturing method includes the step of causing an organic electroluminescence device to be a first electrode and a second electrode Each of the layers of the organic electroluminescent device is laminated in a manner that has a metal oxide layer and a layer of a nitrogen-containing film laminated on the metal oxide layer, and the layering step includes forming an average thickness of 3 to 150 nm. The step of the nitrogen-containing film.
上述本發明之第3較佳形態之有機電激發光元件之製造方 法只要包括上述步驟,則亦可包括其他步驟,亦可包括形成金屬氧化物層、由含氮膜構成之層以外之層的步驟。又,形成有機電激發光元件之各層之材料、形成方法、有機化合物、用以製備含有有機化合物之溶液之溶劑、及各層之厚度與本發明之第3有機電激發光元件相同,較佳者亦相同。 The manufacturer of the organic electroluminescent device of the third preferred embodiment of the present invention The method may include other steps as long as it includes the above steps, and may also include a step of forming a metal oxide layer and a layer other than the layer composed of the nitrogen-containing film. Further, a material for forming each layer of the organic electroluminescence element, a method for forming the organic compound, a solvent for preparing a solution containing the organic compound, and a thickness of each layer are the same as those of the third organic electroluminescence device of the present invention, preferably The same is true.
本發明之有機電激發光元件中,由有機化合物形成之層之成 膜方法並無特別限定,可根據材料之特性而適當使用各種方法,於可製成溶液而塗佈之情形時,可使用上述本發明之第1有機發光元件中形成緩衝 層時之各種塗佈法而成膜。其中,就更容易控制膜厚之方面而言,較佳為旋轉塗佈法或狹縫式塗佈法。於無法塗佈之情形或溶劑溶解性較低之情形時,可列舉真空蒸鍍法或ESDUS(Evaporative Spray Deposition from Ultra-dilute Solution,自超稀溶液之蒸發噴霧沈積)法等作為較佳例。 In the organic electroluminescent device of the present invention, a layer formed of an organic compound The film method is not particularly limited, and various methods can be appropriately used depending on the characteristics of the material. When the solution can be applied as a solution, the first organic light-emitting device of the present invention can be used to form a buffer. A film is formed by various coating methods at the time of layer. Among them, in terms of easier control of the film thickness, a spin coating method or a slit coating method is preferred. In the case where coating is impossible or the solvent solubility is low, a vacuum vapor deposition method or an ESDUS (Evaporative Spray Deposition from Ultra-dilute Solution) method is preferably used.
於塗佈有機化合物溶液而形成由上述有機化合物形成之層 之情形時,作為用以溶解有機化合物之溶劑,可使用與上述本發明之第1有機發光元件中用以製備含有有機化合物之溶液之溶劑相同者,其等之中,作為溶劑,較佳為非極性溶劑,例如可列舉:二甲苯、甲苯、環己基苯、二氫苯并呋喃、三甲基苯、四甲基苯等芳香族烴系溶劑,吡啶、吡、呋喃、吡咯、噻吩、甲基吡咯啶酮等芳香族雜環化合物系溶劑,己烷、戊烷、庚烷、環己烷等脂肪族烴系溶劑等,該等可單獨或混合使用。 When the organic compound solution is applied to form a layer formed of the above organic compound, as a solvent for dissolving the organic compound, a solution for preparing an organic compound-containing compound in the first organic light-emitting device of the present invention described above can be used. Among the solvents, the solvent is preferably a nonpolar solvent, and examples thereof include aromatics such as xylene, toluene, cyclohexylbenzene, dihydrobenzofuran, trimethylbenzene, and tetramethylbenzene. Hydrocarbon solvent, pyridine, pyr A solvent such as an aromatic heterocyclic compound such as furan, pyrrole, thiophene or methylpyrrolidone; an aliphatic hydrocarbon solvent such as hexane, pentane, heptane or cyclohexane; these may be used singly or in combination.
於使用多胺類作為上述含氮化合物之情形時,可使用水或低 級醇作為含有含氮化合物之溶液的溶劑。作為低級醇,較佳為使用碳數1~4之醇,可單獨或混合使用甲醇、乙醇、丙醇、乙氧基乙醇、甲氧基乙醇等。 When polyamines are used as the above nitrogen-containing compound, water or low can be used. The alcohol is used as a solvent for a solution containing a nitrogen-containing compound. As the lower alcohol, it is preferred to use an alcohol having 1 to 4 carbon atoms, and methanol, ethanol, propanol, ethoxyethanol, methoxyethanol or the like may be used singly or in combination.
上述陰極、陽極、及氧化物層可藉由與上述第1有機電激發 光元件中形成第1、第2金屬氧化物層、第2電極、發光層、電洞傳輸層、電子傳輸層之方法相同的方法形成。於形成陽極、陰極時,亦可使用金屬箔之接合。該等方法較佳為根據各層之材料之特性而選擇,製作方法亦可針對各層而有所不同。關於第2金屬氧化物層,該等之中,更佳為使用氣相製膜法而形成。根據氣相製膜法,可於不損壞有機化合物層之表面之情況下潔淨且與陽極接觸良好地形成,其結果,使利用具有如上所述之第2金屬氧化物層而獲得之效果變得更顯著。 The cathode, the anode, and the oxide layer may be excited by the first organic electricity described above The method of forming the first and second metal oxide layers, the second electrode, the light-emitting layer, the hole transport layer, and the electron transport layer in the optical element is formed by the same method. When the anode and the cathode are formed, the joining of the metal foil can also be used. Preferably, the methods are selected based on the properties of the materials of the layers, and the method of fabrication may vary from layer to layer. Among the second metal oxide layers, these are more preferably formed by a vapor phase film formation method. According to the vapor phase film formation method, it is possible to clean and form a good contact with the anode without damaging the surface of the organic compound layer, and as a result, the effect obtained by using the second metal oxide layer as described above becomes More significant.
出於進一步提高本發明之第3有機電激發光元件之特性等 理由,亦可視需要具有例如電洞阻擋層、電子元件層等。可使用通常用以 形成該等層之材料作為用以形成該等層之材料,又,藉由通常用以形成該等層之方法而形成層。 In order to further improve the characteristics of the third organic electroluminescent device of the present invention, etc. For reasons, it is also possible to have, for example, a hole blocking layer, an electronic component layer, and the like. Can be used usually The materials forming the layers are used as the material for forming the layers, and the layers are formed by a method generally used to form the layers.
本發明之第3有機電激發光元件若與構成元件之全部層由 有機化合物構成之有機電激發光元件相比,則無需嚴格之密封,但亦可視需要實施密封。作為密封步驟,可適當使用通常之方法。例如可列舉:於惰性氣體中接著密封容器的方法或於有機EL元件上直接形成密封膜之方法等。除該等方法以外,亦可併用封入水分吸收材之方法。 The third organic electroluminescent device of the present invention is composed of all layers of the constituent elements Compared to an organic electroluminescent device composed of an organic compound, a strict seal is not required, but sealing may be performed as needed. As the sealing step, a usual method can be suitably used. For example, a method of sealing a container in an inert gas or a method of directly forming a sealing film on an organic EL element can be mentioned. In addition to these methods, a method of enclosing a moisture absorbing material may be used in combination.
本發明之第3有機電激發光元件為於基板上鄰接形成陰極 的逆構造之有機電激發光元件。本發明之第3有機電激發光元件可為於與具有基板之側相反之側提取光之頂部發光型者,亦可為於具有基板之側提取光之底部發光型者。 The third organic electroluminescent device of the present invention is formed on the substrate adjacent to the cathode The counter-structured organic electroluminescent element. The third organic electroluminescence device of the present invention may be a top emission type that extracts light on the side opposite to the side having the substrate, or may be a bottom emission type that extracts light on the side having the substrate.
上述基板之材料、及平均厚度與上述第1有機電激發光元件相同。 The material and the average thickness of the substrate are the same as those of the first organic electroluminescence device.
本發明之有機電激發光元件如上所述般於金屬氧化物層上 具有由含氮膜構成之層,藉此成為電子注入特性提高,發光效率優異,並且元件之驅動穩定性及元件壽命亦優異者。 The organic electroluminescent device of the present invention is as described above on the metal oxide layer The layer which consists of a nitrogen-containing film improves the electron injection characteristics, is excellent in luminous efficiency, and is excellent in the drive stability of the element and the lifetime of the element.
此種電子注入特性提高之效果並不限於有機電激發光元件,對於太陽電池或有機半導體等其他光電子裝置亦為有助於性能提高之有益者。如下含氮膜亦又為本發明之一,該膜係上述有助於光電子裝置之性能提高的含氮膜、即 The effect of improving such electron injection characteristics is not limited to organic electroluminescence devices, and is also beneficial to other optoelectronic devices such as solar cells and organic semiconductors. The following nitrogen-containing film is also one of the inventions, and the film is a nitrogen-containing film which contributes to the improvement of the performance of the optoelectronic device, that is,
含有氮之膜,其特徵在於:該膜形成於含有金屬之基材上,由固體之含氮化合物形成,或者含有氮元素與碳元素作為構成膜之元素,構成該膜之氮原子與碳原子之存在比率滿足氮原子數/(氮原子數+碳原子數)>1/8 a film containing nitrogen, characterized in that the film is formed on a substrate containing a metal, formed of a solid nitrogen-containing compound, or contains a nitrogen element and a carbon element as elements constituting the film, and constitutes a nitrogen atom and a carbon atom of the film. The ratio of existence satisfies the number of nitrogen atoms / (number of nitrogen atoms + number of carbon atoms) > 1/8
之關係。本發明之含氮膜之較佳形態或製造方法與上述本發明之有機電激發光元件中之由含氮膜構成之層相同。 Relationship. The preferred embodiment or production method of the nitrogen-containing film of the present invention is the same as the layer composed of the nitrogen-containing film in the above-described organic electroluminescent device of the present invention.
本發明之電激發光元件可藉由對陽極與陰極之間施加電壓(通常為15伏特以下)而發光。通常係施加直流電壓,但亦可包含交流成分。 The electroluminescent device of the present invention can emit light by applying a voltage (usually 15 volts or less) between the anode and the cathode. A DC voltage is usually applied, but an AC component can also be included.
本發明之有機電激發光元件雖為有機無機混合型元件,但有機無機混合型元件所特有的低分子化合物之結晶化獲得抑制,可達成洩漏電流之抑制、及均勻之面發光,且可較佳地用作顯示裝置或照明裝置之材料。本發明之有機電激發光元件可藉由適當選擇有機化合物層之材料而改變發光色,亦可併用彩色濾光片等而獲得所需之發光色。因此,可較佳地用作顯示裝置之發光部位或照明裝置。尤其就逆構造之特性,較佳為與氧化物TFT組合而成之顯示裝置。 The organic electroluminescence device of the present invention is an organic-inorganic hybrid device, but the crystallization of a low-molecular compound peculiar to the organic-inorganic hybrid device is suppressed, and leakage current suppression and uniform surface luminescence can be achieved. Goodly used as a material for a display device or a lighting device. In the organic electroluminescent device of the present invention, the luminescent color can be changed by appropriately selecting the material of the organic compound layer, and a color filter or the like can be used in combination to obtain a desired luminescent color. Therefore, it can be preferably used as a light-emitting portion or a lighting device of a display device. In particular, in view of the characteristics of the reverse structure, a display device in combination with an oxide TFT is preferable.
此種使用本發明之有機電激發光元件所形成之顯示裝置亦又為本發明之一。進而使用本發明之有機電激發光元件所形成之照明裝置亦又為本發明之一。 Such a display device formed using the organic electroluminescent device of the present invention is also one of the inventions. Further, an illumination device formed by using the organic electroluminescent device of the present invention is also one of the inventions.
本發明之第1有機電激發光元件係由上述構成所構成,可達成洩漏電流之抑制、及均勻之面發光。 The first organic electroluminescent device of the present invention is constituted by the above-described configuration, and can suppress leakage current and uniform surface light emission.
又,本發明之第2有機電激發光元件藉由具有緩衝層,而與先前之有機無機混合型有機電激發光元件相比,發光壽命較長,又,藉由使緩衝層含有還原劑,而使發光效率優異。有機無機混合型有機電激發光元件具有如構成有機電激發光元件之各層全部由有機物構成之有機電激發光元件般將各層嚴格密閉之必要性降低等製造上之優點,具有上述優點、及優異之發光壽命、發光效率等發光特性。 Further, the second organic electroluminescence device of the present invention has a buffer layer, and has a longer luminescence lifetime than the conventional organic-inorganic hybrid organic electroluminescence device, and the buffer layer contains a reducing agent. The luminous efficiency is excellent. The organic-inorganic hybrid organic electroluminescent device has the advantages of manufacturing, such as an organic electroluminescent device in which all of the layers of the organic electroluminescent device are made of an organic material, and the necessity of tightly sealing the layers, and has the above advantages and advantages. Luminescence characteristics such as luminescence lifetime and luminescence efficiency.
進而,本發明之第3有機電激發光元件係由上述構成所構成,且無需嚴格之密封之有機無機混合型之具有逆構造之有機電激發光元件,發光效率優異,並且發光之重複穩定性與發光之均勻性優異,具有較高之驅動穩定性,元件之壽命亦較長。 Further, the third organic electroluminescent device of the present invention is composed of the above-described configuration, and does not require a strict sealing organic-inorganic hybrid type organic electroluminescence device having an inverse structure, and has excellent luminous efficiency and repeatability of luminescence. Excellent uniformity with luminescence, high driving stability, and long life of components.
本發明之有機電激發光元件具有上述優異特性,可適宜地用於顯示裝置或照明裝置之材料等。 The organic electroluminescent device of the present invention has the above-described excellent characteristics and can be suitably used for a material of a display device or a lighting device.
1‧‧‧基板 1‧‧‧Substrate
2‧‧‧陰極 2‧‧‧ cathode
3‧‧‧第1金屬氧化物層 3‧‧‧1st metal oxide layer
4‧‧‧含氮膜之層 4‧‧‧ layer of nitrogen-containing film
5‧‧‧有機化合物層 5‧‧‧Organic compound layer
6‧‧‧第2金屬氧化物層 6‧‧‧2nd metal oxide layer
7‧‧‧陽極 7‧‧‧Anode
圖1係將使含硼化合物1溶解於THF而成之溶液塗佈於附有ITO之透明玻璃基板上時的SEM照片。 Fig. 1 is a SEM photograph of a solution obtained by dissolving a boron-containing compound 1 in THF on a transparent glass substrate with ITO.
圖2係表示實施例1及比較例1中所製作之有機電激發光元件之電壓-電流效率特性的圖表。 2 is a graph showing voltage-current efficiency characteristics of the organic electroluminescent device produced in Example 1 and Comparative Example 1.
圖3係表示實施例2~4及比較例2中所製作之有機電激發光元件之電壓-電流效率特性的圖表。 3 is a graph showing voltage-current efficiency characteristics of the organic electroluminescence devices produced in Examples 2 to 4 and Comparative Example 2.
圖4係表示實施例5及比較例2中所製作之有機電激發光元件之電壓-電流效率特性的圖表。 4 is a graph showing voltage-current efficiency characteristics of the organic electroluminescent device produced in Example 5 and Comparative Example 2.
圖5係表示實施例6及比較例3中所製作之有機電激發光元件之電壓-電流效率特性的圖表。 Fig. 5 is a graph showing voltage-current efficiency characteristics of the organic electroluminescent device produced in Example 6 and Comparative Example 3.
圖6係表示實施例7及比較例4中所製作之有機電激發光元件之電壓-亮度特性的圖表。 Fig. 6 is a graph showing voltage-luminance characteristics of the organic electroluminescent device produced in Example 7 and Comparative Example 4.
圖7係表示實施例7及比較例4中所製作之有機電激發光元件之電流密度-電流效率特性的圖表。 Fig. 7 is a graph showing current density-current efficiency characteristics of the organic electroluminescent device produced in Example 7 and Comparative Example 4.
圖8係表示實施例8及比較例5中所製作之有機電激發光元件之電壓-亮度特性的圖表。 Fig. 8 is a graph showing voltage-luminance characteristics of the organic electroluminescent device produced in Example 8 and Comparative Example 5.
圖9係表示實施例8及比較例5中所製作之有機電激發光元件之電流密度-電流效率特性的圖表。 Fig. 9 is a graph showing current density-current efficiency characteristics of the organic electroluminescent device produced in Example 8 and Comparative Example 5.
圖10係表示實施例9、10及比較例6中所製作之有機電激發光元件之電壓-亮度特性的圖表。 Fig. 10 is a graph showing the voltage-luminance characteristics of the organic electroluminescent elements produced in Examples 9 and 10 and Comparative Example 6.
圖11係表示實施例9、10及比較例6中所製作之有機電激發光元件之電流密度-電流效率特性的圖表。 Fig. 11 is a graph showing current density-current efficiency characteristics of the organic electroluminescent devices produced in Examples 9 and 10 and Comparative Example 6.
圖12係表示實施例11及比較例7中所製作之有機電激發光元件之電壓-亮度特性的圖表。 Fig. 12 is a graph showing voltage-luminance characteristics of the organic electroluminescent device produced in Example 11 and Comparative Example 7.
圖13係表示實施例11及比較例7中所製作之有機電激發光元件之電流密度-電流效率特性的圖表。 Fig. 13 is a graph showing current density-current efficiency characteristics of the organic electroluminescent device produced in Example 11 and Comparative Example 7.
圖14係表示實施例12及比較例8中所製作之有機電激發光元件之電壓-亮度特性的圖表。 Fig. 14 is a graph showing voltage-luminance characteristics of the organic electroluminescent device produced in Example 12 and Comparative Example 8.
圖15係表示實施例12、13及比較例8中所製作之有機電激發光元件之電流密度-電流效率特性的圖表。 Fig. 15 is a graph showing current density-current efficiency characteristics of the organic electroluminescent device produced in Examples 12 and 13 and Comparative Example 8.
圖16係表示本發明中所示之第3有機電激發光元件之積層構造之一例的概略圖。 Fig. 16 is a schematic view showing an example of a laminated structure of a third organic electroluminescence device shown in the present invention.
圖17-1係表示實施例14中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、(b)電流密度-電流效率特性之測定結果的圖。 Fig. 17-1 is a graph showing the results of measurement of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 14.
圖17-2係表示實施例14中所製作之有機電激發光元件之(c-1)恆定電流密度下(相當於100cd/m2)之連續驅動特性、及(c-2)恆定電流密度下(相當於1000cd/m2)之連續驅動特性之測定結果的圖。 17-2 shows the continuous driving characteristics (c-2) constant current density at (c-1) constant current density (corresponding to 100 cd/m 2 ) of the organic electroluminescent device fabricated in Example 14. A graph showing the measurement results of the continuous driving characteristics (corresponding to 1000 cd/m 2 ).
圖18係表示比較例9中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、及(b)電流密度-電流效率特性之測定結果的圖。 18 is a view showing measurement results of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Comparative Example 9.
圖19-1係表示實施例15中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、(b)電流密度-電流效率特性之測定結果的圖。 Fig. 19-1 is a graph showing the measurement results of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 15.
圖19-2係表示實施例15中所製作之有機電激發光元件之(c-2)恆定電流密度下(相當於1000cd/m2)之連續驅動特性之測定結果的圖。 Fig. 19-2 is a graph showing the measurement results of the continuous driving characteristics at (c-2) constant current density (corresponding to 1000 cd/m 2 ) of the organic electroluminescent device produced in Example 15.
圖20-1係表示實施例16中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、(b)電流密度-電流效率特性之測定結果的圖。 Fig. 20-1 is a graph showing the measurement results of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 16.
圖20-2係表示實施例16中所製作之有機電激發光元件之(c-2)恆定電流密度下(相當於1000cd/m2)之連續驅動特性之測定結果的圖。 Fig. 20-2 is a graph showing the measurement results of the continuous driving characteristics at (c-2) constant current density (corresponding to 1000 cd/m 2 ) of the organic electroluminescent device produced in Example 16.
圖21係表示實施例17中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、及(c-1)恆定電流密度下(相當於100cd/m2)之連續驅動特性之測定結果的圖。 Figure 21 is a graph showing (a) voltage-current density/luminance characteristics of the organic electroluminescent device produced in Example 17, and continuous driving characteristics at (c-1) constant current density (corresponding to 100 cd/m 2 ). A graph of the measurement results.
圖22-1係表示實施例18中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、(b)電流密度-電流效率特性之測定結果的圖。 Fig. 22-1 is a graph showing the results of measurement of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 18.
圖22-2係表示實施例18中所製作之有機電激發光元件(c-1)恆定電流密度下(相當於100cd/m2)之連續驅動特性之測定結果的圖。 Fig. 22-2 is a graph showing the measurement results of the continuous driving characteristics at a constant current density (corresponding to 100 cd/m 2 ) of the organic electroluminescent device (c-1) produced in Example 18.
圖23-1係表示實施例19中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、(b)電流密度-電流效率特性之測定結果的圖。 23-1 is a graph showing measurement results of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 19.
圖23-2係表示實施例19中所製作之有機電激發光元件之(c-1)恆定電流密度下(相當於100cd/m2)之連續驅動特性之測定結果的圖。 Fig. 23-2 is a graph showing the measurement results of the continuous driving characteristics at (c-1) constant current density (corresponding to 100 cd/m 2 ) of the organic electroluminescent device produced in Example 19.
圖24-1係表示實施例20中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、(b)電流密度-電流效率特性之測定結果的圖。 Fig. 24-1 is a graph showing the measurement results of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 20.
圖24-2係表示實施例20中所製作之有機電激發光元件之(c-2)恆定電流密度下(相當於1000cd/m2)之連續驅動特性之測定結果的圖。 Fig. 24-2 is a graph showing the measurement results of the continuous driving characteristics at (c-2) constant current density (corresponding to 1000 cd/m 2 ) of the organic electroluminescent device produced in Example 20.
圖25-1係表示實施例21中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、(b)電流密度-電流效率特性之測定結果的圖。 Fig. 25-1 is a graph showing the results of measurement of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 21.
圖25-2係表示實施例21中所製作之有機電激發光元件之(c-2)恆定電流密度下(相當於1000cd/m2)之連續驅動特性之測定結果的圖。 Fig. 25-2 is a graph showing the measurement results of the continuous driving characteristics at (c-2) constant current density (corresponding to 1000 cd/m 2 ) of the organic electroluminescent device produced in Example 21.
圖26-1係表示實施例22中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、(b)電流密度-電流效率特性之測定結果的圖。 Fig. 26-1 is a graph showing the measurement results of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 22.
圖26-2係表示實施例22中所製作之有機電激發光元件之(c-1)恆定電流密度下(相當於100cd/m2)之連續驅動特性之測定結果的圖。 Fig. 26-2 is a graph showing the measurement results of the continuous driving characteristics at (c-1) constant current density (corresponding to 100 cd/m 2 ) of the organic electroluminescent device produced in Example 22.
圖27-1係表示實施例23中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、(b)電流密度-電流效率特性之測定結果的圖。 27-1 is a graph showing measurement results of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 23.
圖27-2係表示實施例23中所製作之有機電激發光元件之(c-2)恆定電流密度下(相當於1000cd/m2)之連續驅動特性之測定結果的圖。 Fig. 27-2 is a graph showing the measurement results of the continuous driving characteristics at (c-2) constant current density (corresponding to 1000 cd/m 2 ) of the organic electroluminescent device produced in Example 23.
圖28係表示進行製造例1中所製作之含氮膜的光電子分光測定之結果的圖。 Fig. 28 is a view showing the results of photoelectron spectroscopy measurement of the nitrogen-containing film produced in Production Example 1.
圖29係表示進行製造例2中所製作之含氮膜的光電子分光測定之結果的圖。 Fig. 29 is a view showing the results of photoelectron spectroscopy measurement of the nitrogen-containing film produced in Production Example 2.
圖30係表示進行製造例3中所製作之含氮膜的光電子分光測定之結果的圖。 Fig. 30 is a view showing the results of photoelectron spectroscopy measurement of the nitrogen-containing film produced in Production Example 3.
圖31係表示進行製造例4中所製作之含氮膜的光電子分光測定之結果的圖。 Fig. 31 is a view showing the results of photoelectron spectroscopy measurement of the nitrogen-containing film produced in Production Example 4.
圖32係表示實施例24-1中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、及(b)電流密度-電流效率特性之測定結果的圖。 Fig. 32 is a graph showing the results of measurement of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 24-1.
圖33係表示實施例24-2中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、及(b)電流密度-電流效率特性之測定結果的圖。 Fig. 33 is a graph showing the measurement results of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 24-2.
圖34係表示實施例25中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、及(b)電流密度-電流效率特性之測定結果的圖。 Fig. 34 is a graph showing the measurement results of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Example 25.
圖35係表示比較例10中所製作之有機電激發光元件之(a)電壓-電流密度/亮度特性、及(b)電流密度-電流效率特性之測定結果的圖。 35 is a view showing measurement results of (a) voltage-current density/luminance characteristics and (b) current density-current efficiency characteristics of the organic electroluminescent device produced in Comparative Example 10.
以下,列舉實施例對本發明進行更詳細說明,但本發明並不僅限定於該等實施例。再者,只要無特別說明,則「份」表示「重量份」,「%」表示「質量%」。 Hereinafter, the present invention will be described in more detail by way of examples, but the invention is not limited to the examples. In addition, unless otherwise indicated, "part" means "parts by weight", and "%" means "mass%".
以下之實施例中,各種物性係藉由如下方式測定。 In the following examples, various physical properties were determined by the following methods.
<1H-NMR> < 1 H-NMR>
將所獲得之含硼化合物製成氘化氯仿之溶液,使用高解析核磁共振裝置(製品名「Gemini 2000」:300MHz,Varian,Inc.公司製造)進行測定。化學位移係以自四甲基矽烷於低磁場側之100萬分之1(ppm:δ標度)而記錄,以四甲基矽烷之氫核(δ 0.00)作為參照。 The obtained boron-containing compound was made into a solution of deuterated chloroform, and the measurement was performed using a high-resolution nuclear magnetic resonance apparatus (product name "Gemini 2000": 300 MHz, manufactured by Varian, Inc.). The chemical shift was recorded on a low magnetic field side of 1 part per million (ppm: δ scale) from tetramethyl decane, and the hydrogen nucleus (δ 0.00) of tetramethyl decane was used as a reference.
<13C-NMR> < 13 C-NMR>
將所獲得之含硼化合物製成氘化氯仿之溶液,使用高解析核磁共振裝置(製品名「Gemini 2000」:75MHz,Varian,Inc.公司製造)進行測定。化學位移係以自四甲基矽烷於低磁場側之100萬分之1(ppm:δ標度)而記錄,以NMR溶劑中之碳核(CDCl3:δ=77.0,CD2Cl2:δ=53.1,CD3CN:δ=1.32,DMSO-d6:δ=39.52)作為參照。 The obtained boron-containing compound was made into a solution of deuterated chloroform, and the measurement was performed using a high-resolution nuclear magnetic resonance apparatus (product name "Gemini 2000": 75 MHz, manufactured by Varian, Inc.). The chemical shift is recorded as 1 part per million (ppm: δ scale) from tetramethyl decane on the low magnetic field side, with carbon nuclei in NMR solvent (CDCl 3 : δ = 77.0, CD 2 Cl 2 : δ = 53.1, CD 3 CN: δ = 1.32, DMSO-d 6 : δ = 39.52) as a reference.
<11B-NMR> < 11 B-NMR>
將所獲得之含硼化合物製成氘化氯仿之溶液,使用高解析核磁共振裝置(製品名「Mercury-400」:128MHz,Varian,Inc.公司製造)進行測定。化學位移係以將三氟化硼-二乙醚錯合物之硼核(δ=0.00)作為基準之100萬分之1(ppm:δ標度)而記錄。 The obtained boron-containing compound was made into a solution of deuterated chloroform, and the measurement was performed using a high-resolution nuclear magnetic resonance apparatus (product name "Mercury-400": 128 MHz, manufactured by Varian, Inc.). The chemical shift was recorded by using a boron nucleus (δ = 0.00) of a boron trifluoride-diethyl ether complex as a reference of 1 part per million (ppm: δ scale).
<高解析質譜分析光譜> <High-resolution mass spectrometry analysis spectrum>
使用高解析質譜儀(製品名「JMS-SX101A」、「JMS-MS700」、「JMS-BU250」,日本電子公司製造),藉由電子離子化法(EI,electron ionization)或高速原子衝擊法(FAB,fast atom bombardment)進行測定。 Using a high-resolution mass spectrometer (product name "JMS-SX101A", "JMS-MS700", "JMS-BU250", manufactured by JEOL), by electron ionization (EI) or high-speed atomic impact method ( FAB, fast atom bombardment).
<重量平均分子量> <weight average molecular weight>
重量平均分子量係以聚苯乙烯換算,藉由凝膠滲透層析儀(GPC裝置,展開溶劑:氯仿)於以下裝置及測定條件下測定。 The weight average molecular weight was measured by a gel permeation chromatography (GPC apparatus, developing solvent: chloroform) in the following apparatus and measurement conditions in terms of polystyrene.
高速GPC裝置:HLC-8220GPC(東曹公司製造) High-speed GPC device: HLC-8220GPC (manufactured by Tosoh Corporation)
測定條件:展開溶劑 氯仿 Determination conditions: developing solvent chloroform
管柱 TSK-gel GMHXL×2根 Column TSK-gel GMHXL×2
溶離液流量 1ml/min Dissolution flow rate 1ml/min
管柱溫度 40℃ Column temperature 40 ° C
<本發明之第1有機電激發光元件> <First organic electroluminescent device of the present invention>
(合成例1) (Synthesis Example 1)
(2,7-雙(3-二苯并硼雜環戊二烯基-4-吡啶基苯基)-9,9'-螺茀之合成) Synthesis of (2,7-bis(3-dibenzoboronocyclopentadienyl-4-pyridylphenyl)-9,9'-spiro)
於100mL之兩口圓底燒瓶中添加2-(二苯并硼雜環戊二烯基苯基)-5-溴吡啶(2.6g,6.5mmol)、2,7-雙(4,4,5,5-四甲基-1,3,2-二氧雜硼雜環戊基)-9,9'-螺茀(1.5g,2.7mmol)、Pd(PtBu3)2(170mg,0.32mmol)。使燒瓶內處於氮氣環境下,添加THF(65mL)進行攪拌。 Add 2-(dibenzoborohedylphenyl)-5-bromopyridine (2.6 g, 6.5 mmol), 2,7-bis (4,4,5, in a 100 mL two-neck round bottom flask. 5- tetramethyl-1,3,2-dioxaborolan-pentyl) -9,9' fluorene (1.5g, 2.7mmol), Pd ( PtBu 3) 2 (170mg, 0.32mmol). The inside of the flask was placed under a nitrogen atmosphere, and THF (65 mL) was added and stirred.
於其中添加2M磷酸三鉀水溶液(11mL,22mmol),一面於70℃下回流一面加熱攪拌。12小時後,冷卻至室溫,將反應溶液移至分液漏斗中並添加水,利用乙酸乙酯進行萃取。利用3N鹽酸、水、飽和食鹽水將有機層洗淨後,利用硫酸鎂進行乾燥。將過濾所得之濾液濃縮,利用甲醇將所獲得之固體洗淨,以產率47%獲得2,7-雙(3-二苯并硼雜環戊二烯基-4-吡啶基苯基)-9,9'-螺茀(含硼化合物1)(1.2g,1.3mmol)。 2M aqueous solution of tribasic phosphate (11 mL, 22 mmol) was added thereto, and the mixture was heated and stirred while refluxing at 70 °C. After 12 hours, it was cooled to room temperature, and the reaction solution was transferred to a separatory funnel, and water was added, and extracted with ethyl acetate. The organic layer was washed with 3N hydrochloric acid, water, and brine, and dried over magnesium sulfate. The filtrate obtained by filtration was concentrated, and the obtained solid was washed with methanol to obtain 2,7-bis(3-dibenzoborofyl-4-pyridylphenyl) in a yield of 47%. 9,9'-spiropyrene (boron-containing compound 1) (1.2 g, 1.3 mmol).
其物性值如下所述。 The physical property values are as follows.
1H-NMR(CDCl3):δ 6.67(d,J=7.6Hz,2H),6.75(d,J=1.2Hz,2H),6.82(d,J=7.2Hz,4H),6.97(dt,J=7.2,1.2Hz,4H),7.09(dt,J=7.2,0.8Hz,2H),7.24-7.40(m,14H),7.74-7.77(m,6H),7.84-7.95(m,10H) 1 H-NMR (CDCl 3 ): δ 6.67 (d, J = 7.6 Hz, 2H), 6.75 (d, J = 1.2 Hz, 2H), 6.82 (d, J = 7.2 Hz, 4H), 6.97 (dt, J=7.2, 1.2 Hz, 4H), 7.09 (dt, J=7.2, 0.8 Hz, 2H), 7.24-7.40 (m, 14H), 7.74-7.77 (m, 6H), 7.84-7.95 (m, 10H)
又,合成例1之反應如下述反應式所示。 Further, the reaction of Synthesis Example 1 is shown by the following reaction formula.
對合成例1中所合成之含硼化合物1評價以下所示之元件物性。 The elemental properties shown below were evaluated for the boron-containing compound 1 synthesized in Synthesis Example 1.
<塗佈製膜性> <Coating film formation property>
若將使含硼化合物1溶解於THF而成之溶液塗佈於附有ITO之透明玻璃基板上,則可獲得平滑之薄膜。將其SEM(掃描式電子顯微鏡)照片(倍率:10000倍)示於圖1。根據該結果可證明,含硼化合物1為低分子,並且為可實現由溶液之塗佈製膜之化合物。 When a solution obtained by dissolving the boron-containing compound 1 in THF is applied onto a transparent glass substrate with ITO, a smooth film can be obtained. The SEM (Scanning Electron Microscope) photograph (magnification: 10000 times) is shown in Fig. 1 . From this result, it was confirmed that the boron-containing compound 1 is a low molecule and is a compound which can form a film formed by coating of a solution.
(合成例2) (Synthesis Example 2)
在氬氣環境下,於含有5-溴-2-(4-溴苯基)吡啶(94mg,0.30mmol)之二氯甲烷溶液(0.3ml)中添加乙基二異丙基胺(39mg,0.30mmol)後,於0℃下添加三溴化硼(1.0M,0.9ml,0.9mmol),於室溫下攪拌9小時。將反應溶液冷卻至0℃後,添加飽和碳酸鉀水溶液,利用氯仿進行萃取。利用飽和食鹽水將有機層洗淨,利用硫酸鎂進行乾燥並過濾。利用旋轉蒸發器使濾液濃縮後,濾取所生成之白色固體,利用己烷洗淨,以產率28%獲得下述式(50)所表示之含硼化合物2(40mg,0.082mmol),
其物性值如下所述。 The physical property values are as follows.
1H-NMR(CDCl3):7.57-7.59(m,2H),7.80(dd,J=8.4,0.6Hz,1H),7.99(s,1H),8.27(dd,J=8.4,2.1Hz,1H),9.01(d,J=1.5Hz,1H); 1 H-NMR (CDCl 3 ): 7.57-7.59 (m, 2H), 7.80 (dd, J = 8.4, 0.6 Hz, 1H), 7.99 (s, 1H), 8.27 (dd, J = 8.4, 2.1 Hz, 1H), 9.01 (d, J = 1.5 Hz, 1H);
(合成例3) (Synthesis Example 3)
在氮氣環境下,將溴化五氟苯基鎂之二乙醚溶液(1M,61.2ml,70.4mmol)冷卻至0℃,一面攪拌一面向其中滴加氯化鋅之二乙醚溶液(1M,17ml,17mmol)。滴加結束後,於室溫下攪拌1小時。向其中添加含有上述式(26)所表示之5-溴-2-(4-溴-2-二溴硼烷基苯基)吡啶(3.8g,8mmol)之甲苯溶液(80ml),於80℃下加熱攪拌15小時。冷卻至室溫,將反應溶液添加至冰水中,利用氯仿進行萃取。利用飽和食鹽水將有機層洗淨,利用硫酸鈉進行乾燥並過濾。利用旋轉蒸發器將濾液濃縮後,利用矽膠層析法(己烷:二氯甲烷=1:1)進行純化,藉此以產率58%獲得下述式(51)所表示之含硼化合物3(2.2g,4.61mmol),
其物性值如下所述。 The physical property values are as follows.
1H-NMR(CDCl3):δ 7.16-7.26(m,10H),7.45-7.48(m,1H),7.69-7.71(m,1H),7.81(d,J=2.0Hz,1H),7.90(d,J=8.0Hz,1H),8.15-8.18(m,1H),8.56(d,J=2.0Hz,1H) 1 H-NMR (CDCl 3 ): δ 7.16-7.26 (m, 10H), 7.45-7.48 (m, 1H), 7.69-7.71 (m, 1H), 7.81 (d, J = 2.0 Hz, 1H), 7.90 (d, J = 8.0 Hz, 1H), 8.15-8.18 (m, 1H), 8.56 (d, J = 2.0 Hz, 1H)
(合成例4) (Synthesis Example 4)
將上述式(51)所表示之BC6F5二溴化物(含硼化合物3)(337mg, 0.51mmol)、下述式(52)所表示之F8硼酸二酯(292mg,0.52mmol)溶解於甲苯(3ml)與THF(3ml)中,在氬氣環境下,於室溫下攪拌10分鐘。向其中添加Aliquat 336(21mg)、25質量%Et4NOH水溶液(0.86ml)與蒸餾水(0.75ml)之混合水溶液,在氬氣環境下,於室溫下進而攪拌20分鐘而完成脫氣。於其中添加四(三苯基膦)鈀(8.9mg,0.007mmol)後,一面於115℃下回流一面加熱攪拌48小時。為了進行封端,而添加溴苯(105mg,0.67mmol)攪拌5小時,進而添加苯基硼酸(294mg,2.41mmol)攪拌5小時。放置冷卻至室溫,將經甲苯稀釋之反應溶液利用鹽酸分液洗淨1次,利用純水分液洗淨2次,使有機層濃縮至數ml左右。將濃縮液滴加至300ml之甲醇中,直接攪拌10分鐘,濾取所獲得之沈澱。重複進行合計3次相同之純化過程,將固體減壓乾燥,藉此獲得下述式(53)所表示之含硼聚合物F8BC6F5。含硼聚合物F8BC6F5之重量平均分子量為126000。 The BC6F5 dibromide (boron-containing compound 3) represented by the above formula (51) (337 mg, 0.51 mmol) and the F8 boric acid diester (292 mg, 0.52 mmol) represented by the following formula (52) were dissolved in toluene (3 ml). With THF (3 ml), the mixture was stirred at room temperature for 10 minutes under an argon atmosphere. A mixed aqueous solution of Aliquat 336 (21 mg), a 25% by mass aqueous solution of Et 4 NOH (0.86 ml) and distilled water (0.75 ml) was added thereto, and further stirred under an argon atmosphere at room temperature for 20 minutes to complete degassing. After adding tetrakis(triphenylphosphine)palladium (8.9 mg, 0.007 mmol) thereto, the mixture was heated and stirred while refluxing at 115 ° C for 48 hours. To carry out blocking, bromobenzene (105 mg, 0.67 mmol) was added and stirred for 5 hours, and phenylboric acid (294 mg, 2.41 mmol) was further added and stirred for 5 hours. The mixture was cooled to room temperature, and the reaction solution diluted with toluene was washed once with hydrochloric acid, and washed twice with a pure water solution to concentrate the organic layer to a few ml. The concentrated liquid was added to 300 ml of methanol, stirred directly for 10 minutes, and the obtained precipitate was collected by filtration. The same purification process was repeated three times in total, and the solid was dried under reduced pressure to obtain a boron-containing polymer F8BC6F5 represented by the following formula (53). The weight average molecular weight of the boron-containing polymer F8BC6F5 was 126,000.
(有機電激發光元件之製作) (Production of organic electroluminescent elements)
以下之實施例中,緩衝層之平均厚度係使用觸針式段差計(製品名「Alpha Step IQ」,KLA Tencor公司製造)進行測定。 In the following examples, the average thickness of the buffer layer was measured using a stylus type step meter (product name "Alpha Step IQ", manufactured by KLA Tencor Co., Ltd.).
(實施例1) (Example 1)
[1]準備市售之平均厚度0.7mm之附有ITO電極層之透明玻璃基板。此 時,基板之ITO電極(第1電極)係使用圖案化為寬度2mm者。將該基板於丙酮中、異丙醇中分別進行10分鐘超音波洗淨後,於異丙醇中煮沸5分鐘。將該基板自異丙醇中取出,藉由氮吹法使之乾燥,進行20分鐘UV臭氧洗淨。 [1] A commercially available transparent glass substrate with an ITO electrode layer having an average thickness of 0.7 mm was prepared. this At the time, the ITO electrode (first electrode) of the substrate was patterned to have a width of 2 mm. The substrate was ultrasonicated for 10 minutes in acetone and isopropanol, and then boiled in isopropyl alcohol for 5 minutes. The substrate was taken out from isopropyl alcohol, dried by a nitrogen blowing method, and washed by UV ozone for 20 minutes.
[2]將該基板固定於具有鋅金屬靶之Mirror Tron濺鍍裝置之基板固持器上。減壓至約1×10-4 Pa後,於導入有氬氣與氧氣之狀態下進行濺鍍,製成膜厚約2nm之氧化鋅層。此時,併用金屬掩膜使ITO電極之一部分不成膜氧化鋅以取出電極。 [2] The substrate was fixed on a substrate holder of a Mirror Tron sputtering apparatus having a zinc metal target. After depressurization to about 1 × 10 -4 Pa, sputtering was carried out while introducing argon gas and oxygen gas to form a zinc oxide layer having a film thickness of about 2 nm. At this time, a portion of the ITO electrode was not formed into a film of zinc oxide by a metal mask to take out the electrode.
[3]製成乙酸鎂之1%水-乙醇(以體積比計為1:3)混合溶液。將步驟[2]中製成之基板以與步驟[1]相同之方式再次洗淨。將洗淨之附有氧化鋅薄膜之基板設置於旋轉塗佈機上。於該基板上滴加乙酸鎂溶液,以每分鐘1300轉旋轉60秒。將其於大氣中、設置為400℃之加熱板上焙燒2小時,藉此形成氧化鋅/氧化鎂層(第1金屬氧化物層)。 [3] A mixed solution of 1% water-ethanol (1:3 by volume) of magnesium acetate was prepared. The substrate prepared in the step [2] was washed again in the same manner as in the step [1]. The washed substrate with the zinc oxide film was placed on a spin coater. A magnesium acetate solution was added dropwise to the substrate and rotated at 1300 rpm for 60 seconds. This was baked in a hot plate set at 400 ° C for 2 hours in the atmosphere to form a zinc oxide/magnesium oxide layer (first metal oxide layer).
[4]製成含硼化合物1之0.2%四氫呋喃溶液。將步驟[3]中製成之附有氧化鋅/氧化鎂薄膜之基板設置於旋轉塗佈機上。於該基板上滴加含硼化合物1溶液,以每分鐘2000轉旋轉30秒,形成由含硼有機化合物構成之緩衝層。緩衝層之平均厚度為5nm。 [4] A solution of a boron-containing compound 1 in 0.2% tetrahydrofuran was prepared. The substrate prepared in the step [3] with the zinc oxide/magnesia film was placed on a spin coater. A solution containing a boron compound 1 was dropped on the substrate and rotated at 2000 rpm for 30 seconds to form a buffer layer composed of a boron-containing organic compound. The buffer layer has an average thickness of 5 nm.
[5]將形成至含硼有機化合物之層的基板固定於真空蒸鍍裝置之基板固持器上。將4,4'-雙[9-二咔唑基]-2,2'-聯苯(CBP)、三(1-苯基異喹啉)銥(Ir(piq)3)、N,N'-二(1-萘基)-N,N'-二苯基-1,1'-聯苯-4,4'-二胺(α-NPD)分別添加至氧化鋁坩堝中而設置為蒸鍍源。將真空蒸鍍裝置內減壓至約1×10-5 Pa,將CBP作為主體,將Ir(piq)3作為摻雜劑,共蒸鍍35nm,形成發光層。此時,摻雜濃度係使Ir(piq)3相對於發光層整體成為6重量%。繼而,將α-NPD蒸鍍60nm,形成電洞傳輸層。繼而,進行一次氮氣沖洗後,將三氧化鉬、金添加至氧化鋁坩堝中而設置為蒸鍍源。 將真空蒸鍍裝置內減壓至約1×10-5 Pa,以成為膜厚10nm之方式蒸鍍三氧化鉬(第2金屬氧化物層)。繼而,以成為膜厚50nm之方式蒸鍍金(第2電極),製作有機電激發光元件1-1。蒸鍍第2電極時,係使用不鏽鋼製蒸鍍掩膜以使蒸鍍面成為寬度2mm之帶狀之方式進行。即,所製作之有機電激發光元件之發光面積係設定為4mm2。 [5] A substrate formed to a layer containing a boron-containing organic compound is fixed on a substrate holder of a vacuum evaporation apparatus. 4,4'-bis[9-dicarbazolyl]-2,2'-biphenyl (CBP), tris(1-phenylisoquinoline)indole (Ir(piq) 3 ), N,N'-Di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (α-NPD) was added to alumina crucible and set to evaporate source. The pressure in the vacuum vapor deposition apparatus was reduced to about 1 × 10 -5 Pa, and CBP was mainly used, and Ir(piq) 3 was used as a dopant, and 35 nm was vapor-deposited to form a light-emitting layer. At this time, the doping concentration was such that Ir(piq) 3 became 6 wt% with respect to the entire light-emitting layer. Then, α-NPD was vapor-deposited at 60 nm to form a hole transport layer. Then, after performing a nitrogen purge once, molybdenum trioxide and gold were added to the alumina crucible to provide a vapor deposition source. The pressure in the vacuum vapor deposition apparatus was reduced to about 1 × 10 -5 Pa, and molybdenum trioxide (second metal oxide layer) was vapor-deposited so as to have a film thickness of 10 nm. Then, gold (second electrode) was vapor-deposited so as to have a film thickness of 50 nm to fabricate an organic electroluminescence device 1-1. In the vapor deposition of the second electrode, a vapor deposition mask made of stainless steel was used to form the vapor deposition surface in a strip shape having a width of 2 mm. That is, the light-emitting area of the produced organic electroluminescent device was set to 4 mm 2 .
(比較例1) (Comparative Example 1)
省略步驟[4],除此以外,以與實施例1相同之方式製作有機電激發光元件1-2。 The organic electroluminescent device 1-2 was produced in the same manner as in Example 1 except that the step [4] was omitted.
(實施例2) (Example 2)
[1]準備市售之平均厚度0.7mm之附有ITO電極層之透明玻璃基板。此時,基板之ITO電極(第1電極)係使用圖案化為寬度2mm者。將該基板於丙酮中、異丙醇中分別進行10分鐘超音波洗淨後,於異丙醇中煮沸5分鐘。將該基板自異丙醇中取出,藉由氮吹法使之乾燥,進行20分鐘UV臭氧洗淨。 [1] A commercially available transparent glass substrate with an ITO electrode layer having an average thickness of 0.7 mm was prepared. At this time, the ITO electrode (first electrode) of the substrate was patterned to have a width of 2 mm. The substrate was ultrasonicated for 10 minutes in acetone and isopropanol, and then boiled in isopropyl alcohol for 5 minutes. The substrate was taken out from isopropyl alcohol, dried by a nitrogen blowing method, and washed by UV ozone for 20 minutes.
[2]將該基板固定於具有鋅金屬靶之Mirror Tron濺鍍裝置之基板固持器上。減壓至約1×10-4 Pa後,於導入有氬氣與氧氣之狀態下進行濺鍍,製成膜厚約2nm之氧化鋅層(第1金屬氧化物層)。此時,併用金屬掩膜使ITO電極之一部分不成膜氧化鋅以取出電極。 [2] The substrate was fixed on a substrate holder of a Mirror Tron sputtering apparatus having a zinc metal target. After the pressure was reduced to about 1 × 10 -4 Pa, sputtering was carried out while introducing argon gas and oxygen gas to form a zinc oxide layer (first metal oxide layer) having a film thickness of about 2 nm. At this time, a portion of the ITO electrode was not formed into a film of zinc oxide by a metal mask to take out the electrode.
[3]製成含硼聚合物F8BC6F5之0.2%四氫呋喃溶液。將步驟[2]中製成之附有氧化鋅薄膜之基板設置於旋轉塗佈機上。於該基板上滴加含硼聚合物F8BC6F5溶液,以每分鐘2000轉旋轉30秒,形成由含硼有機化合物構成之緩衝層。緩衝層之平均厚度為10nm。 [3] A 0.2% tetrahydrofuran solution of a boron-containing polymer F8BC6F5 was prepared. The substrate with the zinc oxide film prepared in the step [2] was placed on a spin coater. A boron-containing polymer F8BC6F5 solution was dropped on the substrate and rotated at 2000 rpm for 30 seconds to form a buffer layer composed of a boron-containing organic compound. The buffer layer has an average thickness of 10 nm.
[4]將形成至含硼有機化合物之層的基板固定於真空蒸鍍裝置之基板固持器上。將三(8-羥基喹啉)鋁(Alq3)、N,N'-二(1-萘基)-N,N'-二苯基-1,1'-聯苯-4,4'-二胺(α-NPD)分別添加至氧化鋁坩堝中而設置 為蒸鍍源。將真空蒸鍍裝置內減壓至約1×10-4 Pa,將Alq3共蒸鍍65nm,形成發光層。繼而,將α-NPD蒸鍍60nm,形成電洞傳輸層。繼而,進行一次氮氣沖洗後,將三氧化鉬、金添加至氧化鋁坩堝中而設置為蒸鍍源。將真空蒸鍍裝置內減壓至約1×10-4 Pa,以成為膜厚10nm之方式蒸鍍三氧化鉬(第2金屬氧化物層)。繼而,以成為膜厚30nm之方式蒸鍍金(第2電極),製作有機電激發光元件1-3。蒸鍍第2電極時,係使用不鏽鋼製蒸鍍掩膜以使蒸鍍面成為寬度2mm之帶狀之方式進行。即,所製作之有機電激發光元件之發光面積係設定為4mm2。 [4] A substrate formed to a layer containing a boron-containing organic compound is fixed on a substrate holder of a vacuum evaporation apparatus. Tris(8-hydroxyquinoline)aluminum (Alq 3 ), N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'- Diamine (α-NPD) was added to the alumina crucible and set as a vapor deposition source. The pressure in the vacuum vapor deposition apparatus was reduced to about 1 × 10 -4 Pa, and Alq 3 was vapor-deposited to 65 nm to form a light-emitting layer. Then, α-NPD was vapor-deposited at 60 nm to form a hole transport layer. Then, after performing a nitrogen purge once, molybdenum trioxide and gold were added to the alumina crucible to provide a vapor deposition source. The pressure in the vacuum vapor deposition apparatus was reduced to about 1 × 10 -4 Pa, and molybdenum trioxide (second metal oxide layer) was vapor-deposited so as to have a film thickness of 10 nm. Then, gold (second electrode) was vapor-deposited so as to have a film thickness of 30 nm to fabricate an organic electroluminescence element 1-3. In the vapor deposition of the second electrode, a vapor deposition mask made of stainless steel was used to form the vapor deposition surface in a strip shape having a width of 2 mm. That is, the light-emitting area of the produced organic electroluminescent device was set to 4 mm 2 .
(實施例3) (Example 3)
將實施例2中之步驟[3]中所使用的含硼聚合物F8BC6F5之0.2%四氫呋喃溶液變更為市售之聚(二辛基茀-交替-苯并噻二唑)(F8BT)之0.2%二甲苯溶液,除此以外,以相同之方式製作有機電激發光元件1-4。緩衝層之平均厚度為10nm。 The 0.2% tetrahydrofuran solution of the boron-containing polymer F8BC6F5 used in the step [3] in Example 2 was changed to 0.2% of a commercially available poly(dioctylfluorene-alternate-benzothiadiazole) (F8BT). An organic electroluminescence element 1-4 was produced in the same manner except for the xylene solution. The buffer layer has an average thickness of 10 nm.
(實施例4) (Example 4)
將實施例2中之步驟[3]中所使用的含硼聚合物F8BC6F5之0.2%四氫呋喃溶液變更為市售之聚(二辛基茀)(PFO)之0.2%二甲苯溶液,除此以外,以相同之方式製作有機電激發光元件1-5。緩衝層之平均厚度為10nm。 The 0.2% tetrahydrofuran solution of the boron-containing polymer F8BC6F5 used in the step [3] in Example 2 was changed to a commercially available poly(dioctylfluorene) (PFO) 0.2% xylene solution, and The organic electroluminescent device 1-5 was produced in the same manner. The buffer layer has an average thickness of 10 nm.
(比較例2) (Comparative Example 2)
省略步驟[3],除此以外,以與實施例2相同之方式製作有機電激發光元件1-6。 The organic electroluminescent device 1-6 was produced in the same manner as in Example 2 except that the step [3] was omitted.
(實施例5) (Example 5)
將實施例2中之步驟[3]中所使用的含硼聚合物F8BC6F5之0.2%四氫呋喃溶液變更為日本觸媒公司製造之聚乙亞胺SP-200之1%乙醇溶液,除此以外,以相同之方式製作有機電激發光元件1-7。緩衝層之平均厚度為10nm。 The 0.2% tetrahydrofuran solution of the boron-containing polymer F8BC6F5 used in the step [3] in Example 2 was changed to a 1% ethanol solution of polyethylenimine SP-200 manufactured by Nippon Shokubai Co., Ltd., and The organic electroluminescent elements 1-7 were produced in the same manner. The buffer layer has an average thickness of 10 nm.
(實施例6) (Example 6)
[1]準備市售之平均厚度0.7mm之附有ITO電極層之透明玻璃基板。此時,基板之ITO電極(第1電極)係使用圖案化為寬度2mm者。將該基板於丙酮中、異丙醇中分別進行10分鐘超音波洗淨後,於異丙醇中煮沸5分鐘。將該基板自異丙醇中取出,藉由氮吹法使之乾燥,進行20分鐘UV臭氧洗淨。 [1] A commercially available transparent glass substrate with an ITO electrode layer having an average thickness of 0.7 mm was prepared. At this time, the ITO electrode (first electrode) of the substrate was patterned to have a width of 2 mm. The substrate was ultrasonicated for 10 minutes in acetone and isopropanol, and then boiled in isopropyl alcohol for 5 minutes. The substrate was taken out from isopropyl alcohol, dried by a nitrogen blowing method, and washed by UV ozone for 20 minutes.
[2]將該基板固定於具有鈦金屬靶之Mirror Tron濺鍍裝置之基板固持器上。減壓至約1×10-4 Pa後,於導入有氬氣與氧氣之狀態下進行濺鍍,製成膜厚約2nm之氧化鈦層(第1金屬氧化物層)。此時,併用金屬掩膜使ITO電極之一部分不成膜氧化鈦以取出電極。 [2] The substrate was fixed on a substrate holder of a Mirror Tron sputtering apparatus having a titanium metal target. After the pressure was reduced to about 1 × 10 -4 Pa, sputtering was carried out while introducing argon gas and oxygen gas to form a titanium oxide layer (first metal oxide layer) having a film thickness of about 2 nm. At this time, a portion of the ITO electrode was not formed into a film with a metal mask to take out the electrode.
[3]製成含硼聚合物F8BC6F5之0.2%四氫呋喃溶液。將步驟[2]中製成之附有氧化鈦薄膜之基板設置於旋轉塗佈機上。於該基板上滴加含硼聚合物F8BC6F5溶液,以每分鐘2000轉旋轉30秒,形成由含硼有機化合物構成之緩衝層。緩衝層之平均厚度為10nm。 [3] A 0.2% tetrahydrofuran solution of a boron-containing polymer F8BC6F5 was prepared. The substrate with the titanium oxide film prepared in the step [2] was placed on a spin coater. A boron-containing polymer F8BC6F5 solution was dropped on the substrate and rotated at 2000 rpm for 30 seconds to form a buffer layer composed of a boron-containing organic compound. The buffer layer has an average thickness of 10 nm.
[4]將形成至含硼有機化合物之層的基板固定於真空蒸鍍裝置之基板固持器上。將三(8-羥基喹啉)鋁(Alq3)、N,N'-二(1-萘基)-N,N'-二苯基-1,1'-聯苯-4,4'-二胺(α-NPD)分別添加至氧化鋁坩堝中而設置為蒸鍍源。將真空蒸鍍裝置內減壓至約1×10-4 Pa,將Alq3共蒸鍍65nm,形成發光層。繼而,將α-NPD蒸鍍60nm,形成電洞傳輸層。繼而,進行一次氮氣沖洗後,將三氧化鉬、金添加至氧化鋁坩堝中而設置為蒸鍍源。將真空蒸鍍裝置內減壓至約1×10-4 Pa,以成為膜厚10nm之方式蒸鍍三氧化鉬(第2金屬氧化物層)。繼而,以成為膜厚30nm之方式蒸鍍金(第2電極),製作有機電激發光元件1-8。蒸鍍第2電極時,係使用不鏽鋼製蒸鍍掩膜以使蒸鍍面成為寬度2mm之帶狀之方式進行。即,所製作之有機電激發光元件之發光面積係設定為4mm2。 [4] A substrate formed to a layer containing a boron-containing organic compound is fixed on a substrate holder of a vacuum evaporation apparatus. Tris(8-hydroxyquinoline)aluminum (Alq 3 ), N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'- Diamine (α-NPD) was added to the alumina crucible and set as a vapor deposition source. The pressure in the vacuum vapor deposition apparatus was reduced to about 1 × 10 -4 Pa, and Alq 3 was vapor-deposited to 65 nm to form a light-emitting layer. Then, α-NPD was vapor-deposited at 60 nm to form a hole transport layer. Then, after performing a nitrogen purge once, molybdenum trioxide and gold were added to the alumina crucible to provide a vapor deposition source. The pressure in the vacuum vapor deposition apparatus was reduced to about 1 × 10 -4 Pa, and molybdenum trioxide (second metal oxide layer) was vapor-deposited so as to have a film thickness of 10 nm. Then, gold (second electrode) was vapor-deposited so as to have a film thickness of 30 nm, and the organic electroluminescent device 1-8 was produced. In the vapor deposition of the second electrode, a vapor deposition mask made of stainless steel was used to form the vapor deposition surface in a strip shape having a width of 2 mm. That is, the light-emitting area of the produced organic electroluminescent device was set to 4 mm 2 .
(比較例3) (Comparative Example 3)
進行步驟[3b]代替步驟[3],除此以外,以與實施例6相同之方式製作有機電激發光元件1-9。 The organic electroluminescent device 1-9 was produced in the same manner as in Example 6 except that the step [3b] was carried out instead of the step [3].
[3b]製作利用乙醇將日本特開2012-4492號公報(專利文獻5)之段落[0064]~[0066]中所記載之自組化單分子膜用材料F8TES稀釋成1%而成之溶液。將步驟[2]中製成之附有氧化鈦薄膜之基板設置於旋轉塗佈機上。於該基板上滴加自組化單分子膜用材料F8TES溶液,以每分鐘2000轉旋轉30秒。其後立即藉由乙醇進行沖洗,進而進行10分鐘利用乙醇之超音波洗淨。沖洗後,藉由加熱板於90℃、10分鐘之條件下進行固定化,形成自組化單分子膜層。緩衝層之平均厚度為2nm。F8TES為下述式(54)之化合物。 [3b] A solution prepared by diluting the self-assembled monomolecular film material F8TES described in paragraphs [0064] to [0066] of JP-A-2012-4492 (Patent Document 5) to 1% by using ethanol . The substrate with the titanium oxide film prepared in the step [2] was placed on a spin coater. A F8TES solution of a self-assembled monomolecular film was dropped on the substrate and rotated at 2000 rpm for 30 seconds. Immediately thereafter, it was washed with ethanol, and further washed with ultrasonic waves for 10 minutes. After rinsing, the plate was fixed by heating at 90 ° C for 10 minutes to form a self-assembled monomolecular film layer. The buffer layer has an average thickness of 2 nm. F8TES is a compound of the following formula (54).
(有機電激發光元件之發光特性測定) (Measurement of Luminescence Characteristics of Organic Electroluminescence Element)
藉由吉時利(Keithley)公司製造之「2400型電源電錶(SourceMeter)」,進行對元件之電壓施加、及電流測定。藉由柯尼卡美能達(Konica Minolta)公司製造之「LS-100」,測定發光亮度。又,藉由目視確認發光面之均勻性。 The voltage application and current measurement of the device were performed by a "2400 type power meter (SourceMeter)" manufactured by Keithley. The luminance of the light was measured by "LS-100" manufactured by Konica Minolta. Moreover, the uniformity of the light-emitting surface was confirmed by visual observation.
將對實施例1及比較例1中所製作之有機電激發光元件於氬氣環境下施加4V~10V之直流電壓時的電壓-電流效率特性示於圖2。可知比較例1中所製作之元件之電流效率較低,洩漏電流較大。另一方面,可知實施例1中所製作之元件之電流效率較高,洩漏電流獲得抑制。又,目視觀察下可對實施例1中所製作之元件確認到非常均勻之發光。 The voltage-current efficiency characteristics when the organic electroluminescence device produced in Example 1 and Comparative Example 1 was applied with a DC voltage of 4 V to 10 V under an argon atmosphere are shown in Fig. 2 . It can be seen that the element fabricated in Comparative Example 1 has a low current efficiency and a large leakage current. On the other hand, it was found that the current efficiency of the element fabricated in Example 1 was high, and the leakage current was suppressed. Further, it was confirmed by visual observation that the element produced in Example 1 was able to emit light with a very uniform light.
將對實施例2~4及比較例2中所製作之有機電激發光元件於氬氣環境 下施加4V~15V之直流電壓時的電壓-電流效率特性示於圖3。又,將對實施例5及比較例2中所製作之有機電激發光元件於氬氣環境下施加4V~15V之直流電壓時的電壓-電流效率特性示於圖4。比較例2中所製作之元件之洩漏電流非常大而完全不發光。另一方面,可知實施例2~5中所製作之元件之電流效率較高,洩漏電流獲得抑制。又,目視觀察下對實施例2~5中所製作之元件確認到非常均勻之發光。 The organic electroluminescent elements produced in Examples 2 to 4 and Comparative Example 2 were subjected to an argon atmosphere. The voltage-current efficiency characteristics when a DC voltage of 4V to 15V is applied downward is shown in Fig. 3. Further, the voltage-current efficiency characteristics when the organic electroluminescence device produced in Example 5 and Comparative Example 2 was applied with a DC voltage of 4 V to 15 V under an argon atmosphere are shown in Fig. 4 . The leakage current of the element fabricated in Comparative Example 2 was very large and did not emit light at all. On the other hand, it is understood that the current efficiency of the elements fabricated in Examples 2 to 5 is high, and the leakage current is suppressed. Further, it was confirmed by visual observation that the elements produced in Examples 2 to 5 showed very uniform light emission.
將對實施例6及比較例3中所製作之有機電激發光元件於氬氣環境下施加4V~15V之直流電壓時的電壓-電流效率特性示於圖5。比較例3中所製作之元件之洩漏電流非常大,一瞬間發光後立刻完全不發光。另一方面,可知實施例6中所製作之元件之電流效率較高,洩漏電流獲得抑制。又,目視觀察下對實施例6中所製作之元件可確認到非常均勻之發光。 The voltage-current efficiency characteristics when the organic electroluminescence device produced in Example 6 and Comparative Example 3 was applied with a DC voltage of 4 V to 15 V under an argon atmosphere are shown in Fig. 5 . The leakage current of the element fabricated in Comparative Example 3 was very large, and it did not emit light at all immediately after the light was emitted. On the other hand, it was found that the current efficiency of the element fabricated in Example 6 was high, and the leakage current was suppressed. Further, it was confirmed by visual observation that the element produced in Example 6 was able to emit light with a very uniform light.
根據以上內容,可確認有機無機混合型有機電激發光元件中,藉由將有機化合物塗佈成膜而成之層,可達成洩漏電流之抑制及均勻之面發光。 From the above, it has been confirmed that in the organic-inorganic hybrid organic electroluminescent device, by laminating an organic compound into a film, leakage current suppression and uniform surface light emission can be achieved.
<本發明之第2有機電激發光元件> <The second organic electroluminescent device of the present invention>
以下之實施例中,構成有機電激發光元件之各層之平均厚度係使用觸針式段差計(製品名「Alpha Step IQ」,KLA Tencor公司製造)進行測定。 In the following examples, the average thickness of each layer constituting the organic electroluminescent device was measured using a stylus type step meter (product name "Alpha Step IQ", manufactured by KLA Tencor Co., Ltd.).
(有機電激發光元件之製作) (Production of organic electroluminescent elements)
(實施例7) (Example 7)
[1]準備市售之平均厚度0.7mm之附有ITO電極層之透明玻璃基板。此時,基板之ITO電極(第1電極)係使用圖案化為寬度2mm者。將該基板於丙酮中、異丙醇中分別進行10分鐘超音波洗淨後,於異丙醇中煮沸5分鐘。將該基板自異丙醇中取出,藉由氮吹法使之乾燥,進行20分鐘UV臭氧洗淨。 [1] A commercially available transparent glass substrate with an ITO electrode layer having an average thickness of 0.7 mm was prepared. At this time, the ITO electrode (first electrode) of the substrate was patterned to have a width of 2 mm. The substrate was ultrasonicated for 10 minutes in acetone and isopropanol, and then boiled in isopropyl alcohol for 5 minutes. The substrate was taken out from isopropyl alcohol, dried by a nitrogen blowing method, and washed by UV ozone for 20 minutes.
[2]將該基板固定於具有鋅金屬靶之Mirror Tron濺鍍裝置之基板固持器上。減壓至約1×10-4 Pa後,於導入有氬氣與氧氣之狀態下進行濺鍍,製成 膜厚約2nm之氧化鋅層。此時,併用金屬掩膜使ITO電極之一部分不成膜氧化鋅以取出電極。將其於大氣中、設置為400℃之加熱板上焙燒1小時,藉此形成氧化鋅層(第1金屬氧化物層)。 [2] The substrate was fixed on a substrate holder of a Mirror Tron sputtering apparatus having a zinc metal target. After depressurization to about 1 × 10 -4 Pa, sputtering was carried out while introducing argon gas and oxygen gas to form a zinc oxide layer having a film thickness of about 2 nm. At this time, a portion of the ITO electrode was not formed into a film of zinc oxide by a metal mask to take out the electrode. This was baked in a hot plate set at 400 ° C for 1 hour in the atmosphere to form a zinc oxide layer (first metal oxide layer).
[3]製成上述合成例1中所合成之含硼化合物1之0.2%、(4-(1,3-二甲基-2,3-二氫-1H-苯并咪唑-2-基)苯基)二甲基胺(N-DMBI)之0.002%的1,2-二氯乙烷混合溶液。將步驟[2]中製成之附有氧化鋅薄膜之基板設置於旋轉塗佈機上。於該基板上滴加含硼化合物1、N-DMBI混合溶液,以每分鐘2000轉旋轉30秒,形成含有含硼有機化合物之緩衝層。進而,將其於氮氣環境下、設置為100℃之加熱板上實施1小時退火處理。緩衝層之平均厚度為10nm。 [3] 0.2% of the boron-containing compound 1 synthesized in the above Synthesis Example 1, (4-(1,3-dimethyl-2,3-dihydro-1H-benzimidazol-2-yl)) A mixed solution of 0.002% of 1,2-dichloroethane of phenyl)dimethylamine (N-DMBI). The substrate with the zinc oxide film prepared in the step [2] was placed on a spin coater. A mixed solution of a boron-containing compound 1 and an N-DMBI was dropped on the substrate, and the mixture was rotated at 2000 rpm for 30 seconds to form a buffer layer containing a boron-containing organic compound. Further, this was subjected to an annealing treatment for 1 hour on a hot plate set to 100 ° C in a nitrogen atmosphere. The buffer layer has an average thickness of 10 nm.
[4]將形成至含硼有機化合物之層的基板固定於真空蒸鍍裝置之基板固持器上。將雙(10-羥基苯并[h]喹啉)鈹(Bebq2)、三(1-苯基異喹啉)銥(Ir(piq)3)、N,N'-二(1-萘基)-N,N'-二苯基-1,1'-聯苯-4,4'-二胺(α-NPD)分別添加至氧化鋁坩堝中而設置為蒸鍍源。將真空蒸鍍裝置內減壓至約1×10-5 Pa,將Bebq2作為主體,將1r(piq)3作為摻雜劑,共蒸鍍35nm,形成發光層。此時,摻雜濃度係使Ir(piq)3相對於發光層整體成為6重量%。繼而,將α-NPD蒸鍍60nm,形成電洞傳輸層。 [4] A substrate formed to a layer containing a boron-containing organic compound is fixed on a substrate holder of a vacuum evaporation apparatus. Bis(10-hydroxybenzo[h]quinoline)indole (Bebq 2 ), tris(1-phenylisoquinoline)indole (Ir(piq) 3 ), N,N'-di(1-naphthyl) -N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine (α-NPD) was added to the alumina crucible and set as a vapor deposition source. The pressure in the vacuum vapor deposition apparatus was reduced to about 1 × 10 -5 Pa, and Bebq 2 was used as a main component, and 1r (piq) 3 was used as a dopant, and 35 nm was vapor-deposited to form a light-emitting layer. At this time, the doping concentration was such that Ir(piq) 3 became 6 wt% with respect to the entire light-emitting layer. Then, α-NPD was vapor-deposited at 60 nm to form a hole transport layer.
[5]其次,進行一次氮氣沖洗後,將三氧化鉬、金添加至氧化鋁坩堝中而設置為蒸鍍源。將真空蒸鍍裝置內減壓至約1×10-5 Pa,以成為膜厚10nm之方式蒸鍍三氧化鉬(第2金屬氧化物層)。繼而,以成為膜厚50nm之方式蒸鍍金(第2電極),製作有機電激發光元件2-1。蒸鍍第2電極時,係使用不鏽鋼製蒸鍍掩膜以使蒸鍍面成為寬度2mm之帶狀之方式進行。即,所製作之有機電激發光元件之發光面積係設定為4mm2。 [5] Next, after performing a nitrogen purge, molybdenum trioxide and gold were added to the alumina crucible to provide a vapor deposition source. The pressure in the vacuum vapor deposition apparatus was reduced to about 1 × 10 -5 Pa, and molybdenum trioxide (second metal oxide layer) was vapor-deposited so as to have a film thickness of 10 nm. Then, gold (second electrode) was vapor-deposited so as to have a film thickness of 50 nm to fabricate an organic electroluminescence device 2-1. In the vapor deposition of the second electrode, a vapor deposition mask made of stainless steel was used to form the vapor deposition surface in a strip shape having a width of 2 mm. That is, the light-emitting area of the produced organic electroluminescent device was set to 4 mm 2 .
(比較例4) (Comparative Example 4)
於步驟[3]中,使用含硼化合物1之0.2%之1,2-二氯乙烷溶液代替含硼 化合物1之0.2%、N-DMBI之0.002%的1,2-二氯乙烷混合溶液,除此以外,以與實施例7相同之方式製作有機電激發光元件2-2。 In step [3], a boron-containing compound 1 of 0.2% 1,2-dichloroethane is used instead of boron. An organic electroluminescent device 2-2 was produced in the same manner as in Example 7 except that a mixed solution of 0.2% of the compound 1 and 0.002% of N-DMBI was used.
(實施例8) (Example 8)
於步驟[3]中,使用含硼化合物1之1%、N-DMBI之0.01%的1,2-二氯乙烷混合溶液代替含硼化合物1之0.2%、N-DMBI之0.002%的1,2-二氯乙烷混合溶液,除此以外,以與實施例7相同之方式製作有機電激發光元件2-3。緩衝層之平均厚度為60nm。 In the step [3], a mixed solution of 1% of a boron-containing compound 1 and 0.01% of N-DMBI is used in place of 0.2% of the boron-containing compound 1 and 0.002% of the N-DMBI. An organic electroluminescent device 2-3 was produced in the same manner as in Example 7 except that a mixed solution of 2-dichloroethane was used. The buffer layer has an average thickness of 60 nm.
(比較例5) (Comparative Example 5)
於步驟[3]中,使用含硼化合物1之1%之1,2-二氯乙烷溶液代替含硼化合物1之1%、N-DMBI之0.01%的1,2-二氯乙烷混合溶液,除此以外,以與實施例8相同之方式製作有機電激發光元件2-4。 In the step [3], a 1% solution of a boron compound 1 is used in place of 1% of a boron-containing compound 1 and a 0.01% mixture of 1,2-dichloroethane of N-DMBI. An organic electroluminescent device 2-4 was produced in the same manner as in Example 8 except for the solution.
(實施例9) (Example 9)
進行步驟[4b]代替步驟[4],除此以外,以與實施例8相同之方式製作有機電激發光元件2-5。 The organic electroluminescent device 2-5 was produced in the same manner as in Example 8 except that the step [4b] was carried out instead of the step [4].
[4b]將形成至含硼有機化合物之層的基板固定於真空蒸鍍裝置之基板固持器上。將三(8-羥基喹啉)鋁(Alq3)、N,N'-二(1-萘基)-N,N'-二苯基-1,1'-聯苯-4,4'-二胺(α-NPD)分別添加至氧化鋁坩堝中而設置為蒸鍍源。將真空蒸鍍裝置內減壓至約1×10-4 Pa,將Alq3蒸鍍35nm,形成發光層。繼而,將α-NPD蒸鍍60nm,形成電洞傳輸層。 [4b] The substrate formed to the layer containing the boron-containing organic compound is fixed on the substrate holder of the vacuum evaporation apparatus. Tris(8-hydroxyquinoline)aluminum (Alq 3 ), N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'- Diamine (α-NPD) was added to the alumina crucible and set as a vapor deposition source. The pressure in the vacuum vapor deposition apparatus was reduced to about 1 × 10 -4 Pa, and Alq 3 was vapor-deposited to 35 nm to form a light-emitting layer. Then, α-NPD was vapor-deposited at 60 nm to form a hole transport layer.
(實施例10) (Embodiment 10)
於步驟[3]中,使用含硼化合物1之1%、N-DMBI之0.05%的1,2-二氯乙烷混合溶液代替含硼化合物1之1%、N-DMBI之0.01%的1,2-二氯乙烷混合溶液,除此以外,以與實施例7相同之方式製作有機電激發光元件2-6。緩衝層之平均厚度為60nm。 In the step [3], a mixed solution of 1% of a boron-containing compound 1 and 0.05% of N-DMBI is used in place of 1% of the boron-containing compound 1 and 0.01% of the N-DMBI. An organic electroluminescent device 2-6 was produced in the same manner as in Example 7 except that a mixed solution of 2-dichloroethane was used. The buffer layer has an average thickness of 60 nm.
(比較例6) (Comparative Example 6)
進行步驟[4b]代替步驟[4],除此以外,以與比較例5相同之方式製作有機電激發光元件2-7。 The organic electroluminescent device 2-7 was produced in the same manner as in Comparative Example 5 except that the step [4b] was carried out instead of the step [4].
(實施例11) (Example 11)
於步驟[3]中,使用市售之聚(二辛基茀-交替-苯并噻二唑)(F8BT)之1%、N-DMBI之0.01%的四氫呋喃混合溶液代替含硼化合物1之1%、N-DMBI之0.01%的1,2-二氯乙烷混合溶液,除此以外,以與實施例9相同之方式製作有機電激發光元件2-8。 In the step [3], a commercially available poly(dioctylfluorene-alternate-benzothiadiazole) (F8BT) 1%, N-DMBI 0.01% tetrahydrofuran mixed solution is used instead of the boron-containing compound 1 The organic electroluminescent device 2-8 was produced in the same manner as in Example 9 except that a mixed solution of 0.01% of 1,2-dichloroethane of 0.01% of N-DMBI was used.
(比較例7) (Comparative Example 7)
於步驟[3]中,使用F8BT之1%之四氫呋喃溶液代替F8BT之1%、N-DMBI之0.01%的四氫呋喃混合溶液,除此以外,以與實施例10相同之方式製作有機電激發光元件2-9。 An organic electroluminescent device was produced in the same manner as in Example 10 except that a 1% tetrahydrofuran solution of F8BT was used in place of a 1% solution of F8BT and a 0.01% tetrahydrofuran mixed solution of N-DMBI in the step [3]. 2-9.
(實施例12) (Embodiment 12)
進行步驟[3b]代替步驟[3],除此以外,以與實施例9相同之方式製作有機電激發光元件2-10。 The organic electroluminescent device 2-10 was produced in the same manner as in Example 9 except that the step [3b] was carried out instead of the step [3].
[3b]製成含硼化合物1之1%、隱色結晶紫之0.01%的1,2-二氯乙烷混合溶液。將步驟[2]中製成之附有氧化鋅薄膜之基板設置於旋轉塗佈機上。於該基板上滴加含硼化合物1、隱色結晶紫混合溶液,以每分鐘2000轉旋轉30秒,形成含有含硼有機化合物之緩衝層。進而,將其於氮氣環境下、設置為200℃之加熱板上實施1小時退火處理。緩衝層之平均厚度為60nm。 [3b] A 1,2-dichloroethane mixed solution containing 1% of a boron-containing compound 1 and 0.01% of a leuco crystal violet was prepared. The substrate with the zinc oxide film prepared in the step [2] was placed on a spin coater. A boron-containing compound 1 and a leuco crystal violet mixed solution were dropped on the substrate, and rotated at 2000 rpm for 30 seconds to form a buffer layer containing a boron-containing organic compound. Further, this was subjected to an annealing treatment for 1 hour on a hot plate set at 200 ° C in a nitrogen atmosphere. The buffer layer has an average thickness of 60 nm.
(比較例8) (Comparative Example 8)
於步驟[3b]中,使用含硼化合物1之1%之1,2-二氯乙烷溶液代替含硼化合物1之1%、隱色結晶紫之0.01%的1,2-二氯乙烷混合溶液,除此以外,以與實施例11相同之方式製作有機電激發光元件2-11。 In the step [3b], a 1% solution of a boron-containing compound 1 is used in place of 1% of the boron-containing compound 1, and 0.01% of the leuco crystal violet is 1,2-dichloroethane. An organic electroluminescent device 2-11 was produced in the same manner as in Example 11 except that the solution was mixed.
(實施例13) (Example 13)
於步驟[3b]中,使用漢斯酯(=2,6-二甲基-1,4-二氫吡啶-3,5-二 羧酸二乙酯)代替隱色結晶紫,除此以外,以與實施例12相同之方式製作有機電激發光元件2-12。 In the step [3b], Hans ester (=2,6-dimethyl-1,4-dihydropyridine-3,5-di) is used. The organic electroluminescent device 2-12 was produced in the same manner as in Example 12 except that diethyl carboxylic acid was used instead of the leuco crystal violet.
將實施例7~13、比較例4~8中所製作之有機電激發光元件之匯總示於表1。還原劑之wt%係相對於緩衝層中所使用之有機化合物之量的比例。
(有機電激發光元件之發光特性測定) (Measurement of Luminescence Characteristics of Organic Electroluminescence Element)
藉由吉時利公司製造之「2400型電源電錶」,進行對元件之電壓施加、及電流測定。藉由柯尼卡美能達公司製造之「LS-100」測定發光亮度。 The voltage application and current measurement of the components are performed by the "2400-type power supply meter" manufactured by Keithley. The luminance of the light was measured by "LS-100" manufactured by Konica Minolta.
將對實施例7~13及比較例4~8中所製作之有機電激發光元件於氬氣環境下施加直流電壓時的電壓-亮度特性、電流密度-電流效率特性示於圖6~15。可知於任一情形時,實施例中所製作之經摻雜之元件與比較例中所製作之未經摻雜之元件相比,亮度、電流效率均較高而為優異之特性。 The voltage-luminance characteristics and current density-current efficiency characteristics when the organic electroluminescent elements produced in Examples 7 to 13 and Comparative Examples 4 to 8 were applied with a DC voltage under an argon atmosphere are shown in Figs. 6 to 15 . It can be seen that in either case, the doped element produced in the examples has higher luminance and current efficiency than the undoped element produced in the comparative example, and is excellent in characteristics.
<本發明之第3有機電激發光元件> <The third organic electroluminescent device of the present invention>
(有機電激發光元件之製作) (Production of organic electroluminescent elements)
(實施例14) (Example 14)
[1]準備市售之平均厚度0.7mm之附有ITO電極層之透明玻璃基板1。此時,基板之ITO電極2係使用圖案化為寬度2mm者。將該基板於丙酮中、異丙醇中分別進行10分鐘超音波洗淨後,於異丙醇中煮沸5分鐘。將該基板自異丙醇中取出,藉由氮吹法使之乾燥,進行20分鐘UV臭氧洗淨。 [1] A commercially available transparent glass substrate 1 with an ITO electrode layer having an average thickness of 0.7 mm was prepared. At this time, the ITO electrode 2 of the substrate was patterned to have a width of 2 mm. The substrate was ultrasonicated for 10 minutes in acetone and isopropanol, and then boiled in isopropyl alcohol for 5 minutes. The substrate was taken out from isopropyl alcohol, dried by a nitrogen blowing method, and washed by UV ozone for 20 minutes.
[2]將該基板再次固定於具有鋅金屬靶之Mirror Tron濺鍍裝置之基板固持器上。減壓至約1×10-4 Pa後,於導入有氬氣與氧氣之狀態下進行濺鍍,製成膜厚約2nm之氧化鋅層作為第1金屬氧化物層3。此時,併用金屬掩膜使ITO電極之一部分不成膜氧化鋅以取出電極。 [2] The substrate was again fixed on a substrate holder of a Mirror Tron sputtering apparatus having a zinc metal target. After the pressure was reduced to about 1 × 10 -4 Pa, sputtering was carried out while introducing argon gas and oxygen gas to form a zinc oxide layer having a film thickness of about 2 nm as the first metal oxide layer 3. At this time, a portion of the ITO electrode was not formed into a film of zinc oxide by a metal mask to take out the electrode.
[3]將該基板再次進行[1]之洗淨步驟(於丙酮中、異丙醇中分別進行10分鐘超音波洗淨後,於異丙醇中煮沸5分鐘,其後藉由氮吹法使之乾燥,進行20分鐘UV臭氧洗淨)之後,於400℃之加熱板上進行1小時退火。 [3] The substrate was again subjected to the washing step of [1] (supersonic washing in acetone and isopropanol for 10 minutes, followed by boiling in isopropanol for 5 minutes, followed by nitrogen blowing) After drying, it was subjected to UV ozone washing for 20 minutes), and then annealed on a hot plate at 400 ° C for 1 hour.
[4]其次,為了形成含氮膜之層4,而於2000rpm、30秒之條件下旋轉塗佈利用乙醇將日本觸媒公司製造之聚乙亞胺(註冊商標:EPOMIN)稀釋成0.5重量%而成者。 [4] Next, in order to form the layer 4 containing the nitrogen-containing film, spin coating was performed at 2000 rpm for 30 seconds to dilute the polyethyleneimine (registered trademark: EPOMIN) manufactured by Nippon Shokubai Co., Ltd. to 0.5% by weight with ethanol. Founder.
此處所使用之EPOMIN為分子量300之sp003。 The EPOMIN used herein is sp003 having a molecular weight of 300.
[5]將[4]中所製作之薄膜(基板)於大氣下、加熱板上、150℃下進行5分鐘退火。退火後測得之含氮膜之層之平均厚度為5nm。 [5] The film (substrate) produced in [4] was annealed at 150 ° C for 5 minutes in the air under a hot plate. The average thickness of the layer of the nitrogen-containing film measured after annealing was 5 nm.
[6]其次,將進行了[5]之處理之基板導入至真空裝置中,減壓至1×10-4 Pa以下。作為有機化合物層5,分別依序藉由真空蒸鍍法將Alq3積層32.5nm作為發光層,將α-NPD積層60nm作為電洞傳輸層。 [6] Next, the substrate subjected to the treatment of [5] was introduced into a vacuum apparatus, and the pressure was reduced to 1 × 10 -4 Pa or less. As the organic compound layer 5, 32.5 nm of an Alq 3 layer was used as a light-emitting layer by a vacuum deposition method, and 60 nm of an α-NPD layer was used as a hole transport layer.
[7]其次,於有機化合物層5上形成第2金屬氧化物層6。此處,藉由作為氣相製膜法之真空蒸鍍法形成10nm之氧化鉬。 [7] Next, the second metal oxide layer 6 is formed on the organic compound layer 5. Here, 10 nm of molybdenum oxide was formed by a vacuum vapor deposition method as a vapor phase film formation method.
[8]其次,作為最終步驟,於第2金屬氧化物層6上形成陽極7。此處,藉由真空蒸鍍法將鋁製膜150nm。 [8] Next, as a final step, the anode 7 is formed on the second metal oxide layer 6. Here, a film of aluminum was 150 nm by a vacuum evaporation method.
[9]藉由下述(有機電激發光元件之發光特性測定)及(有機電激發光元件之壽命特性測定)而測定有機電激發光元件特性(電壓-電流密度/亮度特性、電流密度-電流效率特性、恆定電流密度下(相當於100cd/m2、相當於1000cd/m2)之連續驅動特性)。將測定結果分別示於圖17-1、17-2之(a)、(b)、(c-1)及(c-2)。 [9] The characteristics of the organic electroluminescent device (voltage-current density/luminance characteristic, current density) are measured by the following (measurement of the luminescence characteristics of the organic electroluminescence device) and (the measurement of the lifetime characteristics of the organic electroluminescence device). Current efficiency characteristics, continuous drive characteristics at a constant current density (corresponding to 100 cd/m 2 , equivalent to 1000 cd/m 2 ). The measurement results are shown in (a), (b), (c-1), and (c-2) of Figs. 17-1 and 17-2, respectively.
(有機電激發光元件之發光特性測定) (Measurement of Luminescence Characteristics of Organic Electroluminescence Element)
藉由吉時利公司製造之「2400型電源電錶」進行對元件之電壓施加、及電流測定。藉由TOPCON公司製造之「BM-7」測定發光亮度。測定係於氬氣環境下進行。 The voltage application and current measurement of the device were performed by a "2400-type power supply meter" manufactured by Keithley. The luminance of the light was measured by "BM-7" manufactured by TOPCON Corporation. The measurement was carried out under an argon atmosphere.
(有機電激發光元件之壽命特性測定) (Measurement of life characteristics of organic electroluminescent elements)
藉由系統技研公司製造之「有機EL壽命測定裝置」進行對元件之電壓施加、及相對亮度測定。於該裝置中,一面以使元件中流通固定電流之方式自動地調整電壓,一面進行利用光電二極體之相對亮度測定。以使測定開始時之亮度成為100cd/m2及1000cd/m2之方式針對各元件設定電流值。將該等之結果示於各實施例及比較例中之(c-1)、(c-2)。 The voltage application to the device and the relative luminance were measured by an "organic EL life measuring device" manufactured by System Technology Co., Ltd. In this apparatus, the relative luminance measurement by the photodiode is performed while automatically adjusting the voltage so that a fixed current flows through the element. The current value was set for each element so that the luminance at the start of the measurement was 100 cd/m 2 and 1000 cd/m 2 . The results of the above are shown in (c-1) and (c-2) of the respective examples and comparative examples.
再者,圖(c-1)、(c-2)之欄外之例如「t1/2=200h@1000cd/m2」等 記載係表示半衰壽命,上述情形時,表示以恆定電流持續供給相當於初期1000cd/m2之電流密度時的亮度半衰壽命為200小時。 In addition, the descriptions such as "t 1/2 =200h@1000cd/m 2 " outside the columns of (c-1) and (c-2) indicate the half life, and in the above case, the continuous supply is performed at a constant current. The luminance half life of the current density equivalent to 1000 cd/m 2 was 200 hours.
(比較例9) (Comparative Example 9)
省略實施例14之步驟[4]、[5],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、及電流密度-電流效率特性。將該等之結果分別示於圖18(a)、(b)。 The organic electroluminescent device was fabricated in the same manner except that the steps [4] and [5] of Example 14 were omitted, and the voltage-current density/brightness of the organic electroluminescent device was measured in the same manner as in Example 14. Characteristics, and current density - current efficiency characteristics. The results of these are shown in Figures 18(a) and (b), respectively.
(實施例15) (Example 15)
將實施例14之步驟[4]之步驟變更為以下之[4-2],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性、及恆定電流密度下(相當於1000cd/m2)之連續驅動特性。將該等之結果分別示於圖19-1、19-2之(a)、(b)及(c-2)。再者,含氮膜之層之平均膜厚為6nm。 The organic electroluminescent device was produced in the same manner as in Example 14 except that the step of the step [4] of the example 14 was changed to the following [4-2], and the organic electroluminescent device was measured in the same manner as in the example 14. Voltage-current density/luminance characteristics, current density-current efficiency characteristics, and continuous drive characteristics at a constant current density (corresponding to 1000 cd/m 2 ). The results of these are shown in (a), (b) and (c-2) of Figures 19-1 and 19-2, respectively. Further, the average film thickness of the layer containing the nitrogen film was 6 nm.
[4-2]其次,為了形成含氮膜之層4,而於2000rpm、30秒之條件下旋轉塗佈利用乙醇將日本觸媒公司製造之聚乙亞胺(註冊商標:EPOMIN)稀釋成0.5重量%而成者。此處所使用之EPOMIN為分子量70000之P1000。 [4-2] Next, in order to form the layer 4 containing the nitrogen-containing film, spin coating was performed at 2000 rpm for 30 seconds to dilute the polyethyleneimine (registered trademark: EPOMIN) manufactured by Nippon Shokubai Co., Ltd. to 0.5 using ethanol. % by weight. The EPOMIN used herein is P1000 having a molecular weight of 70,000.
(實施例16) (Embodiment 16)
將實施例14之步驟[4]、[5]之步驟變更為以下之[4-3]、[5-3],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性、及恆定電流密度下(相當於1000cd/m2)之連續驅動特性。將該等之結果分別示於圖20-1、20-2之(a)、(b)及(c-2)。再者,含氮膜之層之平均膜厚為5nm。 The steps of steps [4] and [5] of the fourteenth embodiment were changed to the following [4-3] and [5-3], and an organic electroluminescent device was produced in the same manner as in the example. In the same manner, the voltage-current density/luminance characteristics, current density-current efficiency characteristics, and continuous driving characteristics at a constant current density (corresponding to 1000 cd/m 2 ) of the organic electroluminescent device were measured in the same manner. The results of these are shown in (a), (b) and (c-2) of Figs. 20-1 and 20-2, respectively. Further, the average film thickness of the layer containing the nitrogen film was 5 nm.
[4-3]其次,為了形成含氮膜之層4,而於2000rpm、30秒之條件下旋 轉塗佈利用乙醇將二乙三胺稀釋成1.0重量%而成者。 [4-3] Next, in order to form the layer 4 of the nitrogen-containing film, it is rotated at 2000 rpm for 30 seconds. The transfer coating was carried out by diluting diethylenetriamine to 1.0% by weight with ethanol.
將[5-3]、[4-3]中所製作之薄膜(基板)於大氣下、加熱板上、100℃下進行2分鐘退火。 The film (substrate) produced in [5-3] and [4-3] was annealed in a hot plate at 100 ° C for 2 minutes.
(實施例17) (Example 17)
省略實施例14之步驟[5],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、及恆定電流密度下(相當於100cd/m2)之連續驅動特性。將該等之結果分別示於圖21(a)及(c-1)。再者,關於含氮膜之層之膜厚,由於未進行退火,故而該薄膜未固化而無法測定,但已知實施例14中之退火後的含氮膜之層之膜厚及藉由大氣下之退火的膜厚減少,由此推測為10nm左右。 The organic electroluminescent device was fabricated in the same manner except that the step [5] of Example 14 was omitted, and the voltage-current density/luminance characteristics and constant of the organic electroluminescent device were measured in the same manner as in Example 14. Continuous drive characteristics at current density (equivalent to 100 cd/m 2 ). The results of these are shown in Figures 21(a) and (c-1), respectively. Further, since the film thickness of the layer containing the nitrogen film is not annealed, the film is not cured and cannot be measured, but the film thickness of the layer of the nitrogen-containing film after annealing in Example 14 is known and the atmosphere is used. The film thickness of the next annealing is reduced, and it is estimated to be about 10 nm.
(實施例18) (Embodiment 18)
將實施例14之步驟[4]之步驟變更為上述[4-2],將[5]之步驟變更為以下之[5-5],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性、及恆定電流密度下(相當於100cd/m2)之連續驅動特性。將該等之結果分別示於圖22-1、22-2之(a)、(b)及(c-1)。再者,含氮膜之層之平均膜厚為8nm。 The procedure of the step [4] of the fourteenth embodiment is changed to the above [4-2], and the step of [5] is changed to the following [5-5], and otherwise, the organic electroluminescent element is produced in the same manner. The voltage-current density/luminance characteristics, current density-current efficiency characteristics, and continuous driving characteristics at a constant current density (corresponding to 100 cd/m 2 ) of the organic electroluminescent device were measured in the same manner as in Example 14. The results of these are shown in (a), (b) and (c-1) of Figs. 22-1 and 22-2, respectively. Further, the average film thickness of the layer containing the nitrogen film was 8 nm.
將[5-5]、[4-2]中所製作之薄膜(基板)於大氣下、加熱板上、100℃下進行10分鐘退火。 The film (substrate) produced in [5-5] and [4-2] was annealed in a hot plate at 100 ° C for 10 minutes.
(實施例19) (Embodiment 19)
將實施例14之步驟[4]之步驟變更為上述[4-2],將[5]之步驟變更為以下之[5-6],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性、及恆定電流密度下(相當於100cd/m2)之連續驅動 特性。將該等之結果分別示於圖23-1、23-2之(a)、(b)及(c-1)。再者,含氮膜之層之平均膜厚為7nm。 The procedure of the step [4] of the fourteenth embodiment is changed to the above [4-2], and the step of [5] is changed to the following [5-6], except that the organic electroluminescent element is produced in the same manner. The voltage-current density/luminance characteristics, current density-current efficiency characteristics, and continuous driving characteristics at a constant current density (corresponding to 100 cd/m 2 ) of the organic electroluminescent device were measured in the same manner as in Example 14. The results of these are shown in (a), (b) and (c-1) of Figures 23-1 and 23-2, respectively. Further, the average film thickness of the layer containing the nitrogen film was 7 nm.
將[5-6]、[4-2]中所製作之薄膜(基板)於大氣下、加熱板上、150℃下進行10分鐘退火。 The film (substrate) prepared in [5-6] and [4-2] was annealed at 150 ° C for 10 minutes in the air under a hot plate.
(實施例20) (Embodiment 20)
將實施例14之步驟[4]之步驟變更為上述[4-2],將[5]之步驟變更為以下之[5-7],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性、及恆定電流密度下(相當於1000cd/m2)之連續驅動特性。將該等之結果分別示於圖24-1、24-2之(a)、(b)及(c-2)。再者,含氮膜之層之平均膜厚為5nm。 The procedure of the step [4] of the fourteenth embodiment is changed to the above [4-2], and the step of [5] is changed to the following [5-7], and otherwise, the organic electroluminescent element is produced in the same manner. The voltage-current density/luminance characteristics, current density-current efficiency characteristics, and continuous driving characteristics at a constant current density (corresponding to 1000 cd/m 2 ) of the organic electroluminescent device were measured in the same manner as in Example 14. The results of these are shown in (a), (b) and (c-2) of Figures 24-1 and 24-2, respectively. Further, the average film thickness of the layer containing the nitrogen film was 5 nm.
將[5-7]、[4-2]中所製作之薄膜(基板)於大氣下、加熱板上、150℃下進行30分鐘退火。 The film (substrate) prepared in [5-7] and [4-2] was annealed in the atmosphere at 150 ° C for 30 minutes on a hot plate.
(實施例21) (Example 21)
將實施例14之步驟[5]之步驟變更為以下之[5-8],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性、及恆定電流密度下(相當於1000cd/m2)之連續驅動特性。將該等之結果分別示於圖25-1、25-2之(a)、(b)及(c-2)。再者,含氮膜之層之平均膜厚為5nm。 The organic electroluminescent device was produced in the same manner as in Example 14 except that the procedure of the step [5] of the Example 14 was changed to the following [5-8], and the organic electroluminescent device was measured in the same manner as in Example 14. Voltage-current density/luminance characteristics, current density-current efficiency characteristics, and continuous drive characteristics at a constant current density (corresponding to 1000 cd/m 2 ). The results of these are shown in (a), (b) and (c-2) of Figures 25-1 and 25-2, respectively. Further, the average film thickness of the layer containing the nitrogen film was 5 nm.
[5-8]將[4]中所製作之薄膜(基板)於大氣下、加熱板上、100℃下進行30分鐘退火。 [5-8] The film (substrate) produced in [4] was annealed at 100 ° C for 30 minutes in the air under a hot plate.
(實施例22) (Example 22)
將實施例14之步驟[4]之步驟變更為上述[4-2],將[5]之步驟變更為以下之[5-9],除此以外,以相同之方式製作有機電激發光元件,以與實施例 14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性、及恆定電流密度下(相當於100cd/m2)之連續驅動特性。將該等之結果分別示於圖26-1、26-2之(a)、(b)及(c-1)。再者,含氮膜之層之平均膜厚為8nm。 The procedure of the step [4] of the fourteenth embodiment is changed to the above [4-2], and the step of [5] is changed to the following [5-9], and otherwise, the organic electroluminescent element is produced in the same manner. The voltage-current density/luminance characteristics, current density-current efficiency characteristics, and continuous driving characteristics at a constant current density (corresponding to 100 cd/m 2 ) of the organic electroluminescent device were measured in the same manner as in Example 14. The results of these are shown in (a), (b) and (c-1) of Figures 26-1 and 26-2, respectively. Further, the average film thickness of the layer containing the nitrogen film was 8 nm.
[5-9]將[4-2]中所製作之薄膜(基板)於氮氣下、加熱板上、150℃下進行10分鐘退火。 [5-9] The film (substrate) produced in [4-2] was annealed on a hot plate at 150 ° C for 10 minutes under nitrogen.
(實施例23) (Example 23)
將實施例14之步驟[5]之步驟變更為以下之[5-11],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性、及恆定電流密度下(相當於1000cd/m2)之連續驅動特性。將該等之結果分別示於圖27-1、27-2之(a)、(b)及(c-2)。再者,含氮膜之層之平均膜厚為5nm。 The organic electroluminescent device was produced in the same manner as in Example 14 except that the procedure of the step [5] of the example 14 was changed to the following [5-11], and the organic electroluminescent device was measured in the same manner as in the example 14. Voltage-current density/luminance characteristics, current density-current efficiency characteristics, and continuous drive characteristics at a constant current density (corresponding to 1000 cd/m 2 ). The results of these are shown in (a), (b) and (c-2) of Figures 27-1 and 27-2, respectively. Further, the average film thickness of the layer containing the nitrogen film was 5 nm.
[5-11]將[4]中所製作之薄膜(基板)於大氣下、加熱板上、150℃下進行5分鐘退火。其後,利用乙醇進行沖洗。 [5-11] The film (substrate) produced in [4] was annealed at 150 ° C for 5 minutes in the air under a hot plate. Thereafter, it was washed with ethanol.
(製造例1) (Manufacturing Example 1)
對利用實施例14之[1]~[5]之操作所獲得之含氮膜進行下述光電子分光測定。 The following photoelectron spectroscopy was carried out on the nitrogen-containing film obtained by the operation of [1] to [5] of Example 14.
藉由同時進行碳1S軌域及氮1S軌域之測定而進行定量分析。 Quantitative analysis was performed by simultaneously measuring the carbon 1S orbital and the nitrogen 1S orbital domain.
將該等示於圖28(d)、(e)。 These are shown in Figs. 28(d) and (e).
(X射線光電子分光法之測定) (Measurement by X-ray photoelectron spectroscopy)
使用日本電子公司製造(JPS-9000MX)之光電子分光測定裝置,於以下條件下進行測定。 The measurement was carried out under the following conditions using a photoelectron spectroscopy apparatus manufactured by JEOL Ltd. (JPS-9000MX).
X射線源:MgK α X-ray source: MgK α
射束輸出(加速電壓-電流量):10kV-10mA Beam output (acceleration voltage - current amount): 10kV-10mA
通能(Pass Energy):10eV Pass Energy: 10eV
步長(Step):0.1eV Step: 0.1eV
(製造例2) (Manufacturing Example 2)
對利用實施例14之[1]~[4]之操作所獲得之含氮膜進行上述光電子分光測定。 The above photoelectron spectroscopy was carried out on the nitrogen-containing film obtained by the operation of [1] to [4] of Example 14.
藉由同時進行碳1S軌域及氮1S軌域之測定而進行定量分析。 Quantitative analysis was performed by simultaneously measuring the carbon 1S orbital and the nitrogen 1S orbital domain.
將該等示於圖29(d)、(e)。 These are shown in Figs. 29(d) and (e).
(製造例3) (Manufacturing Example 3)
對藉由實施例14之[1]~[3]之步驟及下述[4-12]及[5-12]之步驟而製作之含氮膜進行上述光電子分光測定。再者,含氮膜之層之平均膜厚為10nm。 The photoelectron spectroscopy was carried out on the nitrogen-containing film produced by the steps [1] to [3] of Example 14 and the following steps [4-12] and [5-12]. Further, the average film thickness of the layer containing the nitrogen film was 10 nm.
[4-12]其次,為了形成含氮膜之層4,而於5000rpm、60秒之條件下旋轉塗佈利用乙氧基乙醇將Aldrich製造之乙氧基化聚乙亞胺(分子量:70000)稀釋成0.4重量%而成者。 [4-12] Next, in order to form the layer 4 containing the nitrogen-containing film, ethoxylated polyethyleneimine (molecular weight: 70,000) manufactured by Aldrich using ethoxyethanol was spin-coated at 5000 rpm for 60 seconds. Diluted to 0.4% by weight.
[5-12]將[4-12]中所製作之薄膜(基板)於大氣下、加熱板上、100℃下進行10分鐘退火。 [5-12] The film (substrate) produced in [4-12] was annealed at 100 ° C for 10 minutes in the air under a hot plate.
藉由同時進行碳1S軌域及氮1S軌域之測定而進行定量分析。 Quantitative analysis was performed by simultaneously measuring the carbon 1S orbital and the nitrogen 1S orbital domain.
將該等示於圖30(d)、(e)。 These are shown in Figs. 30(d) and (e).
(製造例4) (Manufacturing Example 4)
依序進行實施例14之[1]~[3]、以下所示之[4-13]、以及[5]之操作,對所獲得之含氮膜進行上述光電子分光測定。再者,含氮膜之層之膜厚為即便藉由複數次測定亦無法估算平均膜厚之程度的膜厚。由此推測為未達3nm。 The operation of [1] to [3] of Example 14, and the following [4-13] and [5] of Example 14 were carried out, and the obtained photo-electron spectroscopy was performed on the obtained nitrogen-containing film. Further, the film thickness of the layer containing the nitrogen film is a film thickness at which the average film thickness cannot be estimated even by a plurality of measurements. This is presumed to be less than 3 nm.
[4-13]其次,為了形成含氮膜之層4,而於2000rpm、30秒之條件下旋轉塗佈利用乙醇將日本觸媒公司製造之聚乙亞胺(註冊商標:EPOMIN)稀 釋成0.125重量%而成者。此處所使用之EPOMIN為分子量70000之P1000。 [4-13] Next, in order to form the layer 4 containing the nitrogen-containing film, spin coating was performed at 2000 rpm for 30 seconds to dilute the polyethyleneimine (registered trademark: EPOMIN) manufactured by Nippon Shokubai Co., Ltd. using ethanol. Released into 0.125% by weight. The EPOMIN used herein is P1000 having a molecular weight of 70,000.
藉由同時進行碳1S軌域及氮1S軌域之測定而進行定量分析。 Quantitative analysis was performed by simultaneously measuring the carbon 1S orbital and the nitrogen 1S orbital domain.
將該等示於圖31(d)、(e)。 These are shown in Figs. 31(d) and (e).
(實施例24-1) (Example 24-1)
將實施例14之步驟[4]及[5]之步驟變更為以下之[4-18]、[5-18],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性。將該等之結果分別示於圖32(a)及(b)。再者,含氮膜之層之平均膜厚為10nm。 The organic electroluminescent device was produced in the same manner except that the steps [4] and [5] of the fourteenth embodiment were changed to the following [4-18] and [5-18]. The voltage-current density/luminance characteristics, current density-current efficiency characteristics of the organic electroluminescent device were measured in the same manner. The results of these are shown in Figures 32(a) and (b), respectively. Further, the average film thickness of the layer containing the nitrogen film was 10 nm.
[4-18]其次,為了形成含氮膜之層4,而於2000rpm、30秒之條件下旋轉塗佈利用乙醇將直鏈聚乙亞胺(自Polysciences公司購買,分子量:25000)稀釋成0.1重量%而成者。 [4-18] Next, in order to form the layer 4 containing the nitrogen-containing film, spin-coating was carried out at 2000 rpm for 30 seconds to dilute the linear polyethyleneimine (purchased from Polysciences, molecular weight: 25,000) to 0.1 using ethanol. % by weight.
[5-18]將[4-18]中所製作之薄膜(基板)於大氣下、加熱板上、150℃下進行5分鐘退火。 [5-18] The film (substrate) produced in [4-18] was annealed at 150 ° C for 5 minutes in the air under a hot plate.
(實施例24-2) (Example 24-2)
省略實施例24-1之步驟[5-18],除此以外,全部以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性。將該等之結果分別示於圖33(a)及(b)。再者,含氮膜之層之平均膜厚為12nm。 The organic electroluminescent device was fabricated in the same manner except that the steps [5-18] of Example 24-1 were omitted, and the voltage-current density of the organic electroluminescent device was measured in the same manner as in Example 14. Brightness characteristics, current density - current efficiency characteristics. The results of these are shown in Figures 33(a) and (b), respectively. Further, the average film thickness of the layer containing the nitrogen film was 12 nm.
(實施例25) (Embodiment 25)
將實施例14之步驟[4]及[5]之步驟變更為以下之[4-20]、[5-20],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性。將該等之結果分別示於圖34(a)及(b)。再者,含氮膜之層之平均膜厚為10nm。 The organic electroluminescent device was fabricated in the same manner except that the steps [4] and [5] of the fourteenth embodiment were changed to the following [4-20] and [5-20], and the examples were The voltage-current density/luminance characteristics, current density-current efficiency characteristics of the organic electroluminescent device were measured in the same manner. The results of these are shown in Figures 34(a) and (b), respectively. Further, the average film thickness of the layer containing the nitrogen film was 10 nm.
[4-20]其次,為了應用三聚氰胺樹脂作為用以形成含氮膜之層4的含氮化合物,而於2000rpm、30秒之條件下旋轉塗佈以1:3混合三聚氰胺及甲醛並以0.1重量%溶解於甲醇:水=1:1之混合溶劑中而成者。 [4-20] Next, in order to apply the melamine resin as the nitrogen-containing compound for forming the layer 4 of the nitrogen-containing film, spin coating was performed at 2000 rpm for 30 seconds to mix melamine and formaldehyde with 1:3 and to 0.1 weight. % is dissolved in a mixed solvent of methanol: water = 1:1.
[5-20]將[4-20]中所製作之薄膜(基板)於大氣下、加熱板上、80℃下進行60分鐘退火。 [5-20] The film (substrate) prepared in [4-20] was annealed at 80 ° C for 60 minutes in the air under a hot plate.
(比較例10) (Comparative Example 10)
將實施例14之步驟[4]及[5]之步驟變更為以下之[4-21]、[5-21],除此以外,以相同之方式製作有機電激發光元件,以與實施例14相同之方式測定有機電激發光元件之電壓-電流密度/亮度特性、電流密度-電流效率特性。將該等之結果分別示於圖35(a)及(b)。 The organic electroluminescent device was fabricated in the same manner except that the steps [4] and [5] of the fourteenth embodiment were changed to the following [4-21] and [5-21], and the examples were The voltage-current density/luminance characteristics, current density-current efficiency characteristics of the organic electroluminescent device were measured in the same manner. The results of these are shown in Figures 35(a) and (b), respectively.
[4-21]其次,使用作為不含氮之有機膜之聚苯乙烯膜(10nm)代替含氮膜之層4,並使用甲苯藉由旋轉塗佈而製膜。 [4-21] Next, a polystyrene film (10 nm) as a nitrogen-free organic film was used instead of the layer 4 containing a nitrogen-containing film, and a film was formed by spin coating using toluene.
[5-21]將[4-21]中所製作之薄膜(基板)於大氣下、加熱板上、150℃下進行5分鐘退火。 [5-21] The film (substrate) produced in [4-21] was annealed at 150 ° C for 5 minutes in the air under a hot plate.
關於圖17~圖27及圖32~圖35,(a)~(c)分別表示以下內容。 17 to 27 and 32 to 35, (a) to (c) respectively show the following.
(a)為電壓-電流密度(黑圓點)/亮度(白圓點)特性。第-,以亮度較高為佳。第二,以可於更低電壓下表現出較高亮度為佳。 (a) is a voltage-current density (black dot) / brightness (white dot) characteristic. The first -, the higher the brightness is better. Second, it is better to exhibit higher brightness at lower voltages.
(b)為電流密度-電流效率(黑菱形)特性。第一,以電流效率(以下表述為「效率」)較高為佳。第二,以電流效率固定為佳。尤其以於高電流密度區域(高亮度區域)較高且固定為佳。 (b) is the current density-current efficiency (black diamond shape) characteristic. First, it is better to have higher current efficiency (hereinafter referred to as "efficiency"). Second, it is better to fix the current efficiency. In particular, the high current density region (high luminance region) is high and fixed.
(c)為表示固定電流下(此處為成為初期亮度1000cd/m2之電流值)之電壓隨時間經過之變化及相對亮度隨時間經過之變化者。第一,以相對亮度隨時間經過之變化較小(可長時間維持初期亮度)(以下表述為「壽命較長」)為佳。第二,以作為與其相關之內容的其過程中之電壓上升較小為 佳。 (c) is a change in voltage over time at a constant current (here, a current value of 1000 cd/m 2 which is an initial luminance) and a change in relative luminance with time. First, it is preferable that the change in relative luminance with time is small (the initial luminance can be maintained for a long period of time) (hereinafter referred to as "long life"). Second, it is preferable to have a smaller voltage rise in the process as a content related thereto.
亮度、效率、壽命之3要素均重要,但其中,於實用上壽命應第一優先考慮。 The three elements of brightness, efficiency, and longevity are all important, but among them, life expectancy should be the first priority.
以上述內容為前提,對圖17~27、32~34之結果進行說明。 Based on the above, the results of FIGS. 17 to 27 and 32 to 34 will be described.
圖17:自低電壓(約2V)起開始發光,於6V下達到3000cd/m2之高亮度。總體而言,效率亦較高為4cd/A以上。又,關於長期變化,亦可實現亮度至半衰為止維持200小時左右的較高之可靠性。於初期亮度100cd/m2之另一驅動條件下,估算具有數千小時之半衰壽命,由此明確再現性亦較高。 Fig. 17: luminescence started from a low voltage (about 2 V), and reached a high luminance of 3000 cd/m 2 at 6V. Overall, the efficiency is also higher than 4 cd/A. Moreover, with respect to long-term changes, it is also possible to achieve high reliability of about 200 hours from brightness to half-life. At an initial luminance of 100cd / m under the driving condition of the other two, with the estimated half lifetime of several thousand hours, thereby clearly also high reproducibility.
圖18:圖18係於金屬氧化物層與發光層之間不具有層之元件的測定結果。可知亮度、效率均為圖17之1/10以下。圖19以下之測定結果中,必定優於該圖18之值,由此顯示出具有含氮膜之層時有效果。 Fig. 18: Fig. 18 shows the measurement results of an element having no layer between the metal oxide layer and the light-emitting layer. It can be seen that the brightness and efficiency are both 1/10 or less of FIG. The measurement results below in Fig. 19 are necessarily superior to the values of Fig. 18, thereby showing an effect when a layer having a nitrogen-containing film is used.
圖19:效率優於圖17(實施例14之元件),但初期數小時內之亮度之下降急遽,就壽命之方面而言,成為圖17較優異之結果。根據該結果推測,作為膜之氧化還原下之穩定性係實施例14之元件優異。 Fig. 19: The efficiency is superior to that of Fig. 17 (the element of the embodiment 14), but the decrease in the luminance in the initial few hours is imminent, and in terms of the life, the result is superior to Fig. 17. From the results, it is estimated that the stability of the film under the redox reaction is excellent in the element of Example 14.
圖20:亮度、效率均與圖17(實施例14之元件)匹敵。關於壽命,亦推移至初期10小時左右,與圖17同等。然而,結果其後引起急遽劣化。 Figure 20: Brightness and efficiency are comparable to those of Figure 17 (component of Example 14). The life is also about 10 hours from the initial stage, which is equivalent to FIG. However, the result subsequently caused rapid deterioration.
根據圖19、20之結果,即便使用分子量不同之聚乙亞胺,初期之特性上亦不會產生較大差異,成為任一者與不具有含氮膜者相比均優異之結果。但是,關於長期穩定性,結果產生差異。 According to the results of Figs. 19 and 20, even if polyethyleneimine having a different molecular weight is used, there is no significant difference in initial characteristics, and it is excellent as compared with those having no nitrogen-containing film. However, with regard to long-term stability, the results vary.
圖21~圖27(實施例17~23)中,確認塗佈含氮化合物而製膜後之製程(退火條件(溫度、時間、環境)及沖洗)對元件特性之影響(製程依賴性)。此外,表示對其等之分子量依賴性。 In FIGS. 21 to 27 (Examples 17 to 23), the influence of the process (annealing conditions (temperature, time, environment) and rinsing) on the device characteristics (process dependency) after coating with a nitrogen-containing compound was confirmed. In addition, it indicates the molecular weight dependence of them.
圖21:為於無退火下使用液狀之分支聚乙亞胺(低分子量)之情形時的元件特性之測定結果。幾乎觀察不到發光,而未達稱作特性之水準。 Fig. 21 is a measurement result of the element characteristics in the case where liquid branched polyethyleneimine (low molecular weight) is used without annealing. Almost no luminescence is observed, and it is not as high as the characteristic.
圖22及圖23:為測定使用液狀之分支聚乙亞胺(高分子量)並改變退火溫度而獲得的元件之特性之結果。獲得溫度較高者於亮度、效率方面均良好的結果。獲得退火溫度之影響於壽命上稍顯著,於半衰壽命方面2倍以上高溫下之退火者良好的結果。可認為其差異起因於經高溫下之退火者初期之亮度下降較小。包括圖21在內,上述情況暗示出退火對壽命延長、即氧化還原之長期穩定性有效果。此處雖未記載,但於在200℃下進行退火之情形時,由於變色為茶色,故而未進行元件測定。由此推測,關於退火溫度,存在最佳值。 Fig. 22 and Fig. 23 are the results of measuring the characteristics of the element obtained by using the liquid branched polyethyleneimine (high molecular weight) and changing the annealing temperature. A result of obtaining a higher temperature in terms of brightness and efficiency. The effect of obtaining the annealing temperature is slightly remarkable on the life, and the result of the annealing at a high temperature of 2 times or more in terms of the half life is good. It can be considered that the difference is caused by a small decrease in luminance at the initial stage of the annealing at a high temperature. Including the case of Fig. 21, the above case implies that annealing has an effect on the life extension, that is, the long-term stability of redox. Although not described here, in the case of annealing at 200 ° C, since the discoloration was brown, the element measurement was not performed. From this, it is estimated that there is an optimum value with respect to the annealing temperature.
圖24:為實施例20中於由實施例17~19(圖21~23)之結果獲得之退火溫度之最佳值即150℃下改變退火時間而進行含氮膜之製作的結果。亮度、效率與圖23(實施例19)相比均稍微降低。又,關於壽命曲線,亦可知初期之劣化開始表現得略強。由該等情況推測,關於退火時間,亦存在最佳值。 Fig. 24 is a view showing the results of producing a nitrogen-containing film by changing the annealing time at 150 ° C which is the optimum value of the annealing temperature obtained in the results of Examples 17 to 19 (Figs. 21 to 23) in Example 20. The brightness and efficiency were slightly lower than those of Fig. 23 (Example 19). Further, regarding the life curve, it is also known that the initial deterioration starts to be slightly stronger. It is speculated from these cases that there is also an optimum value for the annealing time.
圖26:為最後對於進行退火之環境,於上述最佳條件下進行研究的結果。於在氮氣下進行圖23(實施例19)之條件下的含氮膜之製作之情形時,於初期特性(亮度、效率)方面與圖23之間未見較大差異。由此推測,此處之具有含氮膜之效果為非化學吸附之物理吸附下之利用金屬-氮間之極化及分子中之碳-氮間之極化的電子吸引效果。應注意的是於圖26中壽命變得極短。由此可認為,引起壽命延長之本發明中之退火製程不僅伴隨脫溶劑或形態之變化,而且伴隨化學性變化之可能性亦較高(為何種化學變化如下所述)。 Figure 26: Results of the last study under the above optimal conditions for the environment in which annealing was performed. When the production of the nitrogen-containing film under the conditions of Fig. 23 (Example 19) was carried out under nitrogen, no significant difference was observed between the initial characteristics (brightness and efficiency) and Fig. 23. From this, it is presumed that the effect of having a nitrogen-containing film here is an electron attraction effect utilizing the polarization between the metal-nitrogen and the polarization between the carbon and nitrogen in the molecule under physical adsorption which is not chemically adsorbed. It should be noted that the life in Figure 26 becomes extremely short. From this, it can be considered that the annealing process in the present invention which causes the life extension is not only accompanied by a change in solvent removal or morphology, but also has a high possibility of chemical change (which chemical change is as follows).
圖25:根據上述考察之結果推測,關於退火條件,材料自不待言,而且亦依賴於分子量,因此結果對其進行研究。 Figure 25: Based on the results of the above investigations, it is speculated that the annealing conditions, the materials are self-evident, and also depend on the molecular weight, so the results were investigated.
對液狀之分支聚乙亞胺(低分子量)於低於最佳溫度之溫度下進行長時間退火,結果於初期特性方面獲得亮度、效率均接近圖17的結果,但於 發光以前之電壓下及逆向偏壓下觀測到電流密度值較高。上述情況表示存在無助於發光之無用之電流流動(以下表述為「洩漏電流」),多數情況下,於長期穩定性方面存在問題。此次,壽命自初期起亮度急遽下降等而較短,認為上述洩漏電流為原因。 The liquid branched polyethyleneimine (low molecular weight) is annealed at a temperature lower than the optimum temperature for a long time, and as a result, brightness and efficiency are obtained in terms of initial characteristics, and the results are close to those in Fig. 17, but The current density value was observed to be higher under the previous voltage and reverse bias. The above case indicates that there is a useless current flow (hereinafter referred to as "leakage current") which does not contribute to light emission, and in many cases, there is a problem in long-term stability. This time, the life is shortened due to a sudden drop in brightness from the beginning, and the above leakage current is considered to be the cause.
根據該結果可明確,關於退火條件之最佳值,材料自不待言,而且亦依賴於分子量。此外,即便如此般於最佳溫度以下進行長時間之退火,亦無法獲得良好特性,由此暗示出亦存在依賴於材料或分子量之溫度之閾值。 From this result, it is clear that the material is self-evident about the optimum value of the annealing condition, and it also depends on the molecular weight. In addition, even if annealing is performed for a long time below the optimum temperature, good characteristics are not obtained, thereby suggesting that there is also a threshold depending on the temperature of the material or molecular weight.
圖27:若對上述最佳條件(實施例14之條件)下之沖洗效果進行確認,則初期特性(亮度、效率)與圖17(實施例14)大致同等,但洩漏電流略大。認為其係壽命特性較圖17(實施例14)惡化之主要原因。然而,該圖中雖未表示,但製作元件間之特性之不均變小,就再現性之方面而言有所提高。可認為上述方面就實用化之觀點而言為重要之製程。關於壽命,亦認為藉由找出更佳之沖洗條件會獲得改善。 Fig. 27: When the rinsing effect under the above-described optimum conditions (conditions of Example 14) was confirmed, the initial characteristics (brightness, efficiency) were substantially the same as those of Fig. 17 (Example 14), but the leakage current was slightly large. It is considered that the life characteristics of the system are worse than those of FIG. 17 (Example 14). However, although not shown in the figure, the variation in the characteristics between the fabrication elements is small, and the reproducibility is improved. It is considered that the above aspects are important processes from the viewpoint of practical use. Regarding the longevity, it is also believed that an improvement will be obtained by finding better rinsing conditions.
圖32及圖33:為使用直鏈聚乙亞胺作為含氮化合物的結 果。無論有無退火處理,均顯示出良好之初期特性(亮度、效率)。該情況與分支聚乙亞胺不同,認為主要原因為其係固體。即,推測退火之效果在於以下3方面。(i)使之固化。(ii)藉由金屬-氮鍵之豐富化而準備牢固之鍵種類。(iii)改變碳元素:氮元素比,使氮元素存在比率相對提高。 Figure 32 and Figure 33: For the use of linear polyethyleneimine as a nitrogen-containing compound fruit. Good initial properties (brightness, efficiency) were exhibited with or without annealing. This situation is different from branched polyethyleneimine, and it is considered that the main reason is that it is a solid. That is, it is estimated that the effect of annealing is as follows. (i) to cure it. (ii) Preparing a strong bond type by enriching the metal-nitrogen bond. (iii) Changing the carbon element ratio of nitrogen to the relative increase in the ratio of the presence of nitrogen.
該等退火之效果進而如下所述。 The effects of these annealings are further as follows.
圖34:為對應用三聚氰胺樹脂作為氮比率較高之材料進行 研究的結果。與圖18相比,獲得良好之結果,可確認有效果。由於在發光方面亦存在不均,故而認為若找出詳細之較佳條件,則可獲得更良好之結果。 Figure 34: For the application of melamine resin as a material with a high nitrogen ratio The results of the study. As compared with Fig. 18, good results were obtained, and it was confirmed that there was an effect. Since there is also unevenness in light emission, it is considered that better results can be obtained if detailed conditions are found.
圖35:為應用不含氮之有機膜的結果。可知於初期特性方面,亮度、效率均差於圖19。由此可認為,該有機膜僅作為絕緣層而發揮功能。又, 本元件之壽命極短為數分鐘,預想電子注入之機制係藉由發光層中之電荷儲存而引起發光層之能帶彎曲。根據條件之詳細研究,可認為聚苯乙烯亦可改善初期特性,但由於驅動機制如上所述,故而認為長期可靠性無法期待如本發明之元件般。 Figure 35: Results for the application of a nitrogen-free organic film. It can be seen that the brightness and efficiency are inferior to those in Fig. 19 in terms of initial characteristics. From this, it is considered that the organic film functions only as an insulating layer. also, The life of the device is extremely short for a few minutes. The mechanism of electron injection is expected to cause the band of the luminescent layer to bend by the charge storage in the luminescent layer. According to the detailed study of the conditions, it is considered that the polystyrene can also improve the initial characteristics. However, since the driving mechanism is as described above, it is considered that the long-term reliability cannot be expected as the element of the present invention.
其次,對圖28~31(製造例1~4)進行說明。 Next, FIGS. 28 to 31 (manufacturing examples 1 to 4) will be described.
製造例1~4中,於含氮膜之退火前,液狀之分支聚乙亞胺之所有情形時均無法測定。另一方面,藉由退火而變得可測定。由此暗示退火藉由某種效果(僅由該結果無法得出分解之結論)而固化(上述效果(i))。 In Production Examples 1 to 4, the liquid branched polyethyleneimine was not measured in all cases before the annealing of the nitrogen-containing film. On the other hand, it becomes measurable by annealing. This suggests that the annealing is cured by an effect (only the result cannot be decomposed) (the above effect (i)).
圖28~31之碳1s軌域之X射線光電子分光測定之結果(d)及氮1s軌域之X射線光電子分光測定之結果(e)全部為退火後之測定結果。可確認退火前,除圖30以外,全部C:N≒2:1。圖30中,退火前為C:N≒4:1。該等比率為與由化學結構估算之化學計量比一致的值。該元素存在比率係由各自之軌域之波峰面積之比率估算。於圖28及圖29之比較中,可確認存在根據有無退火而有比率之變化者及無比率之變化者。藉由退火,碳及氮之波峰面積均變小,但碳波峰之減少較大,從而引起氮元素比率之相對提高。圖30中,退火後與退火前(化學計量比)相比亦無變化,由此可知無較大之化學變化。上述情況暗示,上述非專利文獻1~3中所記載之由聚乙亞胺或對聚乙亞胺進行修飾而成之化合物形成的薄膜之效果與本發明內進行之藉由退火使液狀之分支聚乙亞胺(低分子量)變化而成的薄膜不同。圖31為藉由將液狀之分支聚乙亞胺(高分子量)薄膜化至低分子量者之同等以上而進行相同之退火處理的結果。本結果中,高分子量聚乙亞胺中元素存在比率亦未變化。由此暗示碳元素:氮元素之存在比率於某種條件下、例如若在非低分子量下則不會變化(上述效果(iii))。 The results of X-ray photoelectron spectroscopy (d) of the carbon 1s orbital domain of FIGS. 28 to 31 and the results of X-ray photoelectron spectroscopy of the nitrogen 1s orbital domain (e) are all measurement results after annealing. It can be confirmed that all of C:N≒2:1 except for Fig. 30 before annealing. In Fig. 30, before annealing, it is C:N≒4:1. These ratios are values consistent with stoichiometric ratios estimated from chemical structures. The element presence ratio is estimated from the ratio of the peak areas of the respective orbital domains. In the comparison between FIG. 28 and FIG. 29, it can be confirmed that there is a change in the ratio and a change in the ratio according to the presence or absence of annealing. By annealing, the peak areas of carbon and nitrogen are all reduced, but the reduction of the carbon wave peak is large, resulting in a relative increase in the ratio of nitrogen elements. In Fig. 30, there was no change after annealing and before annealing (stoichiometric ratio), and it was found that there was no major chemical change. The above-mentioned circumstances suggest that the effect of the film formed of the compound modified with polyethyleneimine or polyethyleneimine described in the above Non-Patent Documents 1 to 3 is performed by annealing in the present invention to make the liquid The film formed by the change of branched polyethyleneimine (low molecular weight) is different. Fig. 31 shows the results of the same annealing treatment by thinning the liquid branched polyethyleneimine (high molecular weight) to the same or higher than those of the low molecular weight. In the present results, the ratio of the elements in the high molecular weight polyethyleneimine did not change. This suggests that the ratio of the presence of the carbon element: nitrogen element does not change under certain conditions, for example, at a non-low molecular weight (effect (iii) above).
圖28~30之(f)係表示對氮1s軌域之X射線光電子分光測定之結果進行波峰分割所得之結果的圖。設想本體系中氮原子之鍵之種類有碳-氮 鍵與金屬-氮鍵兩種。根據先前之文獻,最低能量側之波峰屬於金屬-氮鍵。進而,關於下一個波峰,若屬於碳-氮鍵,則全部兩個波峰間之能量差為0.6eV~0.7eV而大致一致,暗示該等波峰分割與歸屬正確。 Figs. 28 to 30(f) are diagrams showing the results of peak division of the results of X-ray photoelectron spectroscopy of the nitrogen 1s orbital region. Imagine that the type of nitrogen atom bond in this system is carbon-nitrogen. The bond is two kinds of metal-nitrogen bonds. According to the previous literature, the peak of the lowest energy side belongs to the metal-nitrogen bond. Further, regarding the next peak, if it belongs to the carbon-nitrogen bond, the energy difference between all the two peaks is approximately 0.6 eV to 0.7 eV, which is substantially identical, suggesting that the peak division and attribution are correct.
再者,此處雖未表示,但退火前於全部之圖28~圖30之實施例中半高寬均為1.2eV。由此認為,圖28及圖30之情形時半高寬增大,其使壽命延長(上述效果(i))。 Further, although not shown here, the full width at half maximum of all of Figs. 28 to 30 before annealing was 1.2 eV. From this, it is considered that in the case of Figs. 28 and 30, the full width at half maximum is increased, which prolongs the life (the above effect (i)).
根據以上內容,可認為圖28之實例中,表現出上述(i)~(iii)之全部效果,可實現初期特性(亮度、效率)及長期可靠性(壽命)。推測圖30中,於(i)與(i)下可實現初期特性及某種程度之壽命,同樣於圖29中,於(i)之效果下可實現初期特性及某種程度之壽命。根據該等情況可認為:雖然無X射線光電子分光測定之結果,但由於圖32及圖33中所使用之固體之直鏈聚乙亞胺實現了(i),故而即便無退火之效果,亦可實現某種程度之壽命。圖34中亦相同。 From the above, it can be considered that the examples of FIG. 28 exhibit all the effects (i) to (iii) described above, and can realize initial characteristics (brightness, efficiency) and long-term reliability (life). It is estimated that in Fig. 30, initial characteristics and a certain degree of life can be achieved under (i) and (i), and in Fig. 29, initial characteristics and a certain degree of life can be achieved under the effect of (i). According to these circumstances, it is considered that although the result of the X-ray photoelectron spectroscopy is not obtained, since the solid linear polyethyleneimine used in FIGS. 32 and 33 achieves (i), even if there is no annealing effect, A certain degree of life can be achieved. The same is true in Fig. 34.
根據以上結果,可明確以下情況。 Based on the above results, the following can be clarified.
根據圖18與其他圖之比較,可確認於將含氮之薄膜配置於位於下部陰極上之氧化物上之情形時,會使亮度或效率等有機電激發光元件之特性提高。關於退火處理,根據圖33,可確認根據材料不同,亦有無需退火之情況,並非必須。然而,可確認藉由進行退火,多數情況下會使相當於長期可靠性之壽命特性提高。又,關於使用材料,亦確認可使用聚乙亞胺(分子量不同或形狀不同<直鏈與分支>)、二乙三胺、三聚氰胺樹脂之類的豐富之含氮化合物。又,亦可確認其等不僅依賴於材料,而且亦依賴於分子量或形狀而必須選擇製程。尤其是直鏈之聚乙亞胺與其他聚乙亞胺不同,為固體,因此認為即便無退火,亦表現出效果。又,亦確認到製膜後進行沖洗亦有效果。 From the comparison of Fig. 18 with the other figures, it was confirmed that when the nitrogen-containing film is disposed on the oxide on the lower cathode, the characteristics of the organic electroluminescence element such as brightness or efficiency are improved. Regarding the annealing treatment, according to Fig. 33, it was confirmed that there is no need to anneal depending on the material, and it is not essential. However, it has been confirmed that by performing annealing, in many cases, the life characteristics corresponding to long-term reliability are improved. Further, regarding the materials used, it was also confirmed that a rich nitrogen-containing compound such as polyethyleneimine (different molecular weight or shape <linear and branched>), diethylenetriamine or melamine resin can be used. Further, it has been confirmed that the method and the like must be selected depending not only on the material but also on the molecular weight or shape. In particular, linear polyethylenimine is a solid unlike other polyethylenes, and therefore it is considered to exhibit an effect even without annealing. Further, it was confirmed that it was effective to perform rinsing after film formation.
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