TWI593063B - Biometrics sensor and method of manufacturing the same - Google Patents

Description

Biometric sensor and method of manufacturing same

The present invention relates to a biometric sensor and a method of fabricating the same, and more particularly to a biometric sensor fabricated using a prior sacrificial layer removal process and a method of fabricating the same.

In the conventional microcomputer inductance measuring device, in order to form a plurality of cavities therein, a wafer-bonded bonding on cavity may be used, or a sacrificial eavity technique may be used to etch a sacrificial eavity. For example, when a sensor layer microstructure is conventionally fabricated using a sacrificial layer technique, it is usually used to penetrate the entire sensor structure (including multiple layers of material) with one or a small number of through holes near the final fabrication step. Reach the sacrificial layer and remove the sacrificial layer. In order to avoid damage to the structure of the sensor, the number of through holes cannot be too large, and even the position of the through holes must be disposed on the side of the structure body, so that the distance for removing the sacrificial layer is elongated and the etching time is prolonged, thus generating Two very large drawbacks, the first is the etching and position selection of the through holes, because the design of the overall structure becomes complicated. If the structure is a multi-layer material, the through-hole process may require different etching methods for different materials ( For example, dry and wet etching and formulation) cannot be penetrated at one time, resulting in many additional costs. Second, the extended sacrificial layer etching time increases the cost, and it is possible that the sacrificial layer etchant will damage the different structural materials of the sensor structure, which makes the selection of the sacrificial layer etchant relatively limited, and at the same time limits the structural layer. Material selection, these limitations are reflected in the actual The business behavior is to reduce the yield and increase the cost. In addition, after the sacrificial layer is etched, in order to complete the integrity and stability of the structural layer, it is necessary to select a suitable material to seal the through hole. This sealing action requires additional materials and lithography in this conventional manufacturing process (will be part of Removal, such as bare bonding pads, adds further cost and process complexity (reducing yield).

The object of the present invention is to solve the above problems, and to apply the innovation of the present invention to a biometric sensing, which can achieve higher yield and lower cost than conventional structures and manufacturing. In addition, another object of the present invention is to provide a single petrochemical manufacturing technique in which the sensor structure is disposed above an integrated working circuit (IC) and can be adapted to any standard semiconductor process and material (especially sacrificial layer material and etching).

Accordingly, it is an object of embodiments of the present invention to provide a biometric sensor fabricated using an advanced sacrificial layer removal process and a method of fabricating the same that can be used with a semiconductor without adding too much mask and cost Process integration creates a low cost and high stability biometric sensor.

To achieve the above objective, an embodiment of the present invention provides a biometric sensor including at least: a substrate; a base structure layer formed on the substrate and having a plurality of cavities arranged in a two-dimensional array, and respectively a plurality of microchannel groups in which the cavities are connected, wherein each microchannel group comprises a plurality of microchannels; and a working structural layer formed on the base structural layer and having a plurality of seals partially filling the microchannel groups unit. Each sealing portion comprises a plurality of sealing plugs and a sealing cover, the sealing cover connects the sealing plugs together, the sealing plug is filled into the microchannels, and the sealing cover is located on the flat surface of the base structural layer, so that the sealing portion has Part of the material is located in the infrastructure layer. Each cavity is surrounded by a substrate, a base structure layer and a working structure layer, and the working structure layer senses the biological characteristics of an organism.

The embodiment of the present invention further provides a method for manufacturing a biometric sensor, comprising at least the steps of: providing a substrate; forming a base structure mother layer on the substrate; forming a plurality of microchannel groups on the base structure mother layer, wherein Each microchannel group includes a plurality of microchannels; a plurality of sacrificial layers of the base mother layer or a plurality of portions of a sacrificial parent layer are removed through the microchannel groups to form a base structural layer and located in the infrastructure layer The microchannel groups and the plurality of cavities arranged in a two-dimensional array, such microchannel groups are respectively connected to the cavities; and a working structural layer is formed on the infrastructure layer, and the working structure is The layers are partially filled into the microchannel groups to form a plurality of sealing portions. Each sealing portion comprises a plurality of sealing plugs and a sealing cover, the sealing cover connects the sealing plugs together, the sealing plug is filled into the microchannels, and the sealing cover is located on the flat surface of the base structural layer, so that the sealing portion has Part of the material is located in the infrastructure layer. Each cavity is surrounded by a substrate, a base structure layer and a working structure layer, and the working structure layer senses the biological characteristics of an organism.

With the above embodiments of the present invention, it is possible to manufacture a biometric sensor that is simple in structure and can be easily integrated with a semiconductor process, and can not only be mass-produced, but also does not greatly increase the manufacturing cost, thereby contributing to a reduction in biometrics. The cost of the detector.

In order to make the above description of the present invention more comprehensible, the preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings.

F‧‧‧ organisms

W1‧‧‧First vibration wave

W2‧‧‧second vibration wave

1‧‧‧Biometric Sensor

10‧‧‧Substrate

12‧‧‧Integrated working circuit

13‧‧‧First electrode

14‧‧‧ Sacrifice layer

14'‧‧‧sacrificial mother layer

18‧‧‧etching inhibition layer

19‧‧‧ peripheral circuits

20, 20'‧‧‧ infrastructure layer

21‧‧‧ cavity

22‧‧‧Microchannel

23‧‧‧ Coverage

30‧‧‧Working structure

31‧‧‧ Sealing Department

31a‧‧‧ Sealing plug

31b‧‧‧ Sealing cover

35‧‧‧ Piezoelectric vibration wave working element

35'‧‧‧ Piezoelectric vibration wave working element

39‧‧‧Protective layer

50‧‧‧Connecting mat

60‧‧‧Basic structure mother layer

90‧‧‧ Cover panel

351‧‧‧Insulation

352, 352'‧‧‧ bottom electrode

353, 353'‧‧‧ piezoelectric layer

354, 354'‧‧‧ top electrode

1 shows a partial cross-sectional view of a biometric sensor in accordance with a first embodiment of the present invention.

2 shows a top plan view of a biometric sensor in accordance with a first embodiment of the present invention.

3 is a partial cross-sectional view showing a biometric sensor in accordance with a second embodiment of the present invention.

4 is a partial cross-sectional view showing a biometric sensor in accordance with a third embodiment of the present invention.

Figure 5 is a partial cross-sectional view showing a biometric sensor in accordance with a fourth embodiment of the present invention.

6A to 6F are partial cross-sectional views showing respective steps of a method of fabricating a biometric sensor according to a first embodiment of the present invention.

7A through 7F are partial cross-sectional views showing respective steps of a method of fabricating a biometric sensor in accordance with a fifth embodiment of the present invention.

1 and 2 respectively show a partial cross-sectional view and a top plan view of a biometric sensor 1 according to a first embodiment of the present invention. As shown in FIG. 1 and FIG. 2, the biometric sensor 1 of the present embodiment includes at least a substrate 10, a base structure layer 20, and a working structure layer 30.

The substrate 10 may further have a plurality of integrated working circuits 12 (this non-essential condition, another embodiment concept, may also be controlled and processed by an external integrated working circuit or a peripheral circuit 19 formed around the substrate 10, Alternatively, the peripheral circuit 19 can replace the plurality of integrated working circuits 12). In one example, the substrate 10 is a semiconductor substrate, such as a germanium substrate, and the integrated working circuit 12 can be completed using a CMOS semiconductor process. The substrate 10 may be a CMOS wafer in another embodiment, and the manufacturing method of the present invention may be mass-produced by using wafer level manufacturing technology, but the present invention is of course not limited thereto, and any semiconductor process is applicable to the present invention. .

The base layer 20 is formed on the substrate 10 and has a plurality of cavities 21 arranged in a two-dimensional array, and a plurality of microchannel groups respectively communicating with the cavities 21, wherein each microchannel group comprises a plurality of microchannels twenty two. The infrastructure layer 20 is primarily provided to form an empty The cavity 21 is used, and the material thereof is not particularly limited, but in the present embodiment, it is a top layer of a CMOS process, which may be ruthenium oxide, or tantalum nitride, or a combination of both, or other insulating materials such as Alumina, tantalum carbide, carbon-like diamond film, etc. The top layer of the structure can also be planarized by chemical mechanical polishing (CMP) for subsequent better lithography processes.

The working structural layer 30 is formed on the base structural layer 20 and has a plurality of sealing portions 31 that are partially filled into the microchannels 22 of the microchannel groups. Each cavity 21 is surrounded by a substrate 10, a base structure layer 20 and a working structure layer 30. The design of the microchannel 22 and the sealing portion 31 is the core of the invention, in order to make a sacrificial layer (as shown in FIG. 6A). The reference numeral 14 is removed with optimum efficiency. The microchannel 22 has a two-dimensional array of small pitches and is evenly distributed over the sacrificial layer 14. An important design concept is that the small pitch G is about the sacrificial layer. The thickness T (that is, the height of the cavity 21) is twice, whereby when the sacrificial layer etching is performed, the etching is designed to be isotropic etching, and the depth of the etching down is approximately equal to the lateral etching. Length, so complete removal of the sacrificial layer can be done most efficiently. Of course, the G/T ratio can be fine-tuned to the stability of the structural design, up to five times, to reduce the etching time. At the same time, the size of the microchannel may not be too large, otherwise the subsequent sealing portion 31 will not be easily completed. Another important feature of the present invention is that the sealing portion 31 can not only seal the microchannel 22, but also the sealing portion after sealing can be provided. A near planar surface layer to facilitate fabrication of subsequent materials, wherein the size of the microchannel 22 is less than or equal to 2 micrometers (μm) in the preferred embodiment, and greater than or equal to 0.2 micrometers, the lower limit in other embodiments. Is greater than or equal to 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 or 1.0 microns. The working structure layer 30 is electrically connected to the integrated working circuit 12 and senses the biological characteristics of a living body F, and the integrated working circuit 12 generates a plurality of sensing signals from the sensing result of the working structural layer 30 to the peripheral circuit 19 deal with.

In this embodiment, a capacitive/electrostatically driven biological sensation is provided. The detector, such as a fingerprint sensor or a blood vessel pattern sensor, is composed of a different material from the base layer 20 and each sealing portion 31. For example, the material of the base layer 20 is an insulating material (such as a single material), and the material of the sealing portion 31 is a conductive material, such as a metal material, such as aluminum, or a semiconductor or an insulating material. Therefore, the base layer 20 is a flattened insulating layer filled with aluminum as the sealing portion 31, and the sealing portion 31 forms a sensing capacitance with the living body F, and the air gap of the cavity 21 is utilized to reduce the influence of the parasitic capacitance. . That is, the sealing portions 31 of the working structure layer 30 are used as a sensing electrode, and the sensing electrodes are respectively arranged corresponding to the cavities 21 and electrically connected to the integrated working circuits 12. In the present embodiment, each sealing portion 31 includes a plurality of sealing plugs 31a and a sealing cover 31b, and the sealing cover 31b connects the sealing plugs 31a together. The sealing plug 31a is filled into the microchannel 22. The sealing cover 31b is located on the flat surface of the base structural layer 20. Therefore, in the sealing portion 31 provided in the present embodiment, a part of the material (the sealing plug 31a) is located in the base structure layer 20, and this structure has never been mentioned. The working structure layer 30 may further comprise a protective layer 39 covering the sensing electrodes. The biological body F and the sensing electrodes form a plurality of sensing capacitors, and the sensing signals are obtained by sensing the sensing capacitances. In practical applications, the protective layer 39 can be adhered to a cover panel 90 through an adhesive (not shown), such as an under glass or under cover, or directly under the screen of the mobile phone (under display) ). It should be noted that the protective layer 39 is not an essential component, and the sealing portion 31 may be adhered to the cover panel through an adhesive. The connection pads 50 of FIG. 2 are formed on or around the cavity 21, and are electrically connected to the integrated working circuit 12 and the respective working structure layers 30 for signal input and output.

It is worth noting that biometrics refer to the subtle patterns of living organisms, used as biometrics, rather than the contactless sensing of living organisms, so they are completely different from the conventional touch panel/screen sensing fingers. . In addition, the working structure layer is not etched through the sacrificial layer etching channel (as in the prior art), so the sensing structure is not damaged (this is a matter of the prior art). One of the questions).

3 is a partial cross-sectional view showing a biometric sensor in accordance with a second embodiment of the present invention. As shown in FIG. 3, this embodiment provides an electrostatically driven sensor, which is not described similarly to the first embodiment. Therefore, the substrate 10 further has a plurality of first electrodes 13 disposed above the integrated working circuits 12 and electrically connected to the integrated working circuits 12 and corresponding to the cavities 21, respectively. Each of the sealing portions 31 of the working structure layer 30 is used as a second electrode, and the second electrodes are respectively arranged corresponding to the cavities 21 and electrically connected to the integrated working circuits 12. In addition, the working structure layer 30 further includes a protective layer 39 covering the second electrode and the base structure layer 20. In actual operation, the integrated working circuit 12 outputs a driving signal to the first electrode 13 or the second electrode, so that the second electrode generates a plurality of first vibration waves W1, and the first vibration waves W1 are interfered by the biological body F. Turning into a plurality of second vibration waves W2 opposite to the traveling direction of the first vibration wave W1, the first electrodes 13 and the second electrodes sense properties related to the second vibration waves W2 (for example, reflected waves) Or the interference wave produces such a sensing signal, such as a change in the capacitance value between the two electrodes.

4 is a partial cross-sectional view showing a biometric sensor in accordance with a third embodiment of the present invention. As shown in FIG. 4, this embodiment provides a piezoelectric capacitive sensor, which is not described similarly to the second embodiment. In this embodiment, the substrate 10 further has a plurality of first electrodes 13 disposed above the integrated working circuits 12 and electrically connected to the integrated working circuits 12 and corresponding to the cavities 21, respectively. In addition, each sealing portion 31 of the working structure layer 30 is used as a second electrode, and the second electrodes are respectively arranged corresponding to the cavities 21 and electrically connected to the integrated working circuits 12. To achieve the sensed function, the working structure layer 30 further includes a plurality of piezoelectric vibration wave working elements 35 located above the second electrodes. In a non-limiting example, the piezoelectric vibration wave operating element 35 can be electrically coupled to the peripheral circuitry 19. The piezoelectric vibration wave working elements 35 emit a plurality of first vibration waves W1 to the living body F to generate a plurality of The second vibration wave W2 is opposite to the traveling direction of the first vibration wave W1. The first electrodes 13 and the second electrodes sense the properties associated with the second vibrational waves W2 (eg, the capacitance values between the two electrodes change) to produce the sensing signals. The protective layer 39 covers these piezoelectric vibration wave working elements 35. In the present embodiment, each piezoelectric vibration wave working element 35 includes an insulating layer 351, a bottom electrode 352, a piezoelectric layer 353, and a top electrode 354. The insulating layer 351 is located on the second electrode and the base structure layer 20. The bottom electrode 352 is located above the second electrode and on the insulating layer 351. The piezoelectric layer 353 is located on the bottom electrode 352. The top electrode 354 is located on the piezoelectric layer 353. The top electrode 354 and the bottom electrode 352 are connected to a driving signal to vibrate the piezoelectric layer 353, thereby causing the second electrode to generate the first vibration wave W1. It should be noted that the material of the piezoelectric layer 353 may be any piezoelectric material such as aluminum nitride, lead zirconate titanate (PZT), zinc oxide or the like. The above is an application that uses a piezoelectric principle to achieve a driving function and a capacitive function to achieve a sensing function.

It should be noted that the structure of FIG. 4 can also be changed to use the electrostatic principle to achieve the driving function, and the piezoelectric principle is used to achieve the application of the sensing function. In a variant implementation example, the integrated working circuit 12 outputs a driving signal to the first electrode 13 or the second electrode such that the second electrode generates a plurality of first vibration waves W1, and the first vibration waves W1 are interfered by the biological body F. And converting into a plurality of second vibration waves W2 opposite to the traveling direction of the first vibration wave W1, and the piezoelectric vibration wave working elements 35 sense the properties related to the second vibration waves W2 to generate the sensing signals. . That is, the piezoelectric layer 353 senses the properties associated with the second vibrational waves W2 to generate such sensing signals.

Figure 5 is a partial cross-sectional view showing a biometric sensor in accordance with a fourth embodiment of the present invention. As shown in FIG. 5, this embodiment provides a piezoelectric sensor, which is not described similarly to the third embodiment. In the present embodiment, the base structure layer 20 and the sealing portion 31 are composed of the same material (for example, an insulating material such as cerium oxide or tantalum nitride). It should be noted that in other embodiments, the material of the base layer 20 is an insulating material, and the sealing plug 31a of the sealing portion 31 and the material of the sealing cover 31b may be the piezoelectric material, such as aluminum nitride (AlN), Lead zirconate titanate (PZT), zinc oxide, etc., but the present invention is of course not limited thereto. The working structure layer 30 further includes a plurality of piezoelectric vibration wave working elements 35' located above the sealing portions 31 and electrically connected to the integrated working circuits 12. The piezoelectric vibration wave working elements 35' emit a plurality of first vibration waves W1 to the living body F to generate a plurality of second vibration waves W2 opposite to the traveling direction of the first vibration wave W1, and the piezoelectric vibration wave working elements 35' senses the properties associated with the second vibrational waves W2 to produce such sensed signals. This can be achieved using techniques for time-divisional emission and sensing. In addition, the protective layer 39 covers these piezoelectric vibration wave working elements 35'. Each piezoelectric vibration wave working element 35' includes a bottom electrode 352', a piezoelectric layer 353', and a top electrode 354'. The bottom electrode 352' is located on the sealing portion 31. The piezoelectric layer 353' is located on the bottom electrode 352'. The top electrode 354' is located on the piezoelectric layer 353', and the top electrode 354' and the bottom electrode 352' are connected to a driving signal to vibrate the piezoelectric layer 353', thereby generating the first vibration wave W1, and the piezoelectric layer 353' Sensing the properties associated with the second vibrational waves W2 produces the sensing signals that are output through the top electrode 354' and the bottom electrode 352'.

6A to 6F are partial cross-sectional views showing respective steps of a method of fabricating a biometric sensor according to a first embodiment of the present invention. The method of manufacturing the biometric sensor 1 includes at least the following steps. First, a substrate 10 is provided. In another embodiment, a plurality of integrated working circuits 12 may be further provided. Then, a plurality of sacrificial layers 14 are formed on the substrate 10, as shown in FIG. 6A. In this embodiment, aluminum is used as the material of the sacrificial layer. In a CMOS process, the aluminum may be the topmost metal layer, and the thickness thereof is about 1 μm. Of course, it is also possible to adjust the thickness to adjust the thickness to meet actual needs. . In other embodiments, other materials may also be used as the sacrificial layer, such as germanium, polymer, cerium oxide or other metallic materials. Then, a base structure layer 20 is formed on the sacrificial layer 14 and the substrate 10, such as 6B, for example, a top-layer passivation of a CMOS process, which may be tantalum oxide, or tantalum nitride, or a combination of the two, or other insulating materials such as aluminum oxide, tantalum carbide, carbon-like diamond film, etc. . At the same time, the top layer of the structure can be planarized by CMP to facilitate a subsequent better lithography process. In this embodiment, it may be yttrium oxide and has a thickness of about 0.5 to 0.8 μm. Then, a plurality of microchannels 22 of a plurality of microchannel groups are formed on the base layer 20 to expose the sacrificial layers 14, as shown in FIG. 6C, the microchannels 22 have a two-dimensional array of small pitches and are evenly distributed. Above the sacrificial layer 14, an important design concept is that the small pitch G is about twice the thickness T of the sacrificial layer 14, up to five times, to reduce the etching time, and the size of the microchannel is not too large. Otherwise, the subsequent sealing portion 31 will not be easily completed. Another important feature of the present invention is that the sealing portion 31 can not only seal the microchannel 22, but also the sealed sealing portion can provide a near-surface layer for subsequent materials. The fabrication, where the microchannel size is less than 2 [mu]m in the preferred embodiment. A preferred embodiment of the present invention utilizes aluminum (Al) dry etching techniques for etching as a sacrificial layer, and adjusts the formulation to be isotropic etching, that is, lateral etching is possible. Effect, whereby the Al sacrificial layer can be removed vertically and laterally through a plurality of through vias (the microchannels of such microchannel groups), which is completely compatible with the sacrificial layer etching of semiconductor processes and devices, It is also a feature of the present invention and has never been mentioned. That is, the sacrificial layers 14 are removed through the microchannels 22 of the microchannel groups by etching, for example, to form a plurality of cavities 21 arranged in a two-dimensional array, such microchannel groups. These microchannels 22 are in communication with the cavities 21, respectively, as shown in Figure 6D. When the sacrificial layer 14 is removed, the photoresist 50 of FIG. 2 can be protected by photoresist. Finally, a working structure layer 30 (including the sealing portion 31 of FIG. 6E and the protective layer 39 of FIG. 6F) is formed on the base layer 20, and the working structure layer 30 is partially filled into the microchannels of the microchannel groups. 22, a plurality of sealing portions 31 are formed as described above. When the size of the through hole is, for example, 0.5 μm, the sealing portion 31 has a material thickness of about 0.3 to 0.5 μm, which can be effectively sealed. In another embodiment of the invention, a thicker sealing portion 31 can also be fabricated, and then a portion of the material of the sealing portion 31 can be etched back to provide a flat surface for subsequent processing, such as etching or CMP.

It should be noted that the steps of FIGS. 6A and 6B can be considered as forming a base structure mother layer 60 on the substrate 10. The step of FIG. 6C can be viewed as forming a plurality of microchannel groups on the base structure mother layer 60, each microchannel group comprising a plurality of microchannels 22. The steps of FIG. 6D can be viewed as removing the plurality of sacrificial layers 14 of the base mother layer 60 through the microchannels 22 of the microchannel groups to form the base layer 20, and located at the base layer 20 The microchannels 22 of the microchannel groups and the plurality of cavities 21 arranged in a two-dimensional array.

Therefore, this embodiment can integrate an ASIC process, especially a CMOS process. After the sacrificial layer 14 is formed in the CMOS process, only one mask can be used to complete a capacitive or electrostatic acoustic biometric sensor, wherein the first mask The cover is used to form a metal plug around the sacrificial layer 14 (to achieve an electrical connection between the integrated working circuit 12 and the working structure layer 30, such as a tungsten (W) plug), the second mask is used The microchannel 22 is formed and the photoresist 50 is protected by a photoresist, and the third mask is used to define the material of the sealing portion 31. Because the entire CMOS process requires about 20 masks, the extra three masks added will not add too much cost, nor will it add too much difficulty, and the materials and equipment are also compatible with CMOS. Process, no additional investment required.

The manufacturing method of the first embodiment can be applied to the second embodiment, except that the substrate 10 is first formed with the first electrode 13, which can be achieved by using a metal layer or a plurality of channel plugs in conjunction with a connecting line.

The manufacturing method of the first embodiment can be applied to the third embodiment, except that after the sealing portion 31 is formed, the insulation of the piezoelectric vibration wave working unit 35 is sequentially formed. The layer 351, the bottom electrode 352, the piezoelectric layer 353, and the top electrode 354 are then covered with a protective layer 39 on the top electrode 354.

The manufacturing method of the third embodiment can be applied to the fourth embodiment, except that the base structural layer 20 and the sealing portion 31 are composed of the same material (for example, an insulating material), but are formed at different stages. Therefore, it is not necessary to form the insulating layer 351 again.

7A through 7F are partial cross-sectional views showing respective steps of a method of fabricating a biometric sensor in accordance with a fifth embodiment of the present invention. As shown in Figs. 7A to 7F, the fifth embodiment is similar to the first embodiment. The steps of FIGS. 7A and 7B can be considered to form a base structure mother layer 60 on the substrate 10. As shown in FIG. 7A, a sacrificial mother layer 14' is formed on the substrate 10. As shown in FIG. 7B, a cap layer 23 is formed on the sacrificial mother layer 14', wherein the substrate 10 has an etch stop layer 18 in direct contact with the cavities 21 and the sacrificial parent layer 14'. The step of FIG. 7C can be viewed as forming a plurality of microchannels 22 on the base structure mother layer 60. The steps of FIG. 7D can be considered to remove portions of a sacrificial parent layer 14' of the base structure mother layer 60 through the microchannels 22 to form the base structure layer 20, and in the base structure layer 20. The microchannels 22 and the plurality of cavities 21 arranged in a two-dimensional array, in this embodiment, the sacrificial parent layer 14' may be, for example, yttrium oxide, of course not limited thereto, and the cover layer 23 is For example, tantalum nitride, tantalum, niobium telluride, etc., of course, is not limited thereto, such a design can further simplify the process steps, further reduce the cost, does not need to specifically define the sacrificial layer step, but utilizes the microchannel 22 and the like The same structure can be accomplished by a directional etching method such as steam hydrofluoric acid (Vapor HF). The steps of Figures 7E and 7F are similar to the first embodiment and will not be described in detail.

Thus, the base structure layer 20' of the biometric sensor of FIG. 7F includes a sacrificial parent layer 14' on the substrate 10 and is formed with the cavities 21; and a cover layer 23 on the sacrificial parent layer 14' And forming the microchannels 22 of the microchannel groups. Yu Yi In the example, the material of the sacrificial mother layer 14' is an oxide, the material of the cap layer 23 is a nitride, and the material of the sealing portion 31 is a conductive material. In another example, the material of the cover layer 23 is a conductive material such as tantalum or tantalum or the like. The biometric sensor of the fifth embodiment can also achieve effects similar to those of the first embodiment.

With the above embodiments of the present invention, it is possible to manufacture a biometric sensor that is simple in structure and can be easily integrated with a semiconductor process, and can not only be mass-produced, but also does not greatly increase the manufacturing cost, thereby contributing to a reduction in biometrics. The cost of the detector.

The specific embodiments of the present invention are intended to be illustrative only and not to limit the invention to the above embodiments, without departing from the spirit of the invention and the following claims. The scope of the invention and the various changes made are within the scope of the invention.

F‧‧‧ organisms

G‧‧‧Small spacing

T‧‧‧ thickness

1‧‧‧Biometric Sensor

10‧‧‧Substrate

12‧‧‧Integrated working circuit

19‧‧‧ peripheral circuits

20‧‧‧Basic structural layer

21‧‧‧ cavity

22‧‧‧Microchannel

30‧‧‧Working structure

31‧‧‧ Sealing Department

31a‧‧‧ Sealing plug

31b‧‧‧ Sealing cover

39‧‧‧Protective layer

90‧‧‧ Cover panel

Claims (20)

A biometric sensor comprising: at least one substrate; a base structure layer formed on the substrate and having a plurality of cavities arranged in a two-dimensional array, and a plurality of microchannels respectively communicating with the cavities a group, wherein each of the microchannel groups comprises a plurality of microchannels; and a working structural layer formed on the base structural layer and having a plurality of sealing portions partially filled in the microchannel groups, each of the sealing portions comprising a plurality of a sealing plug and a sealing cover, the sealing cover connecting the sealing plugs together, the sealing plug is filled into the microchannel, and the sealing cover is located on a flat surface of the base structural layer, so that the sealing portion A portion of the material is located in the base layer, wherein each of the cavities is surrounded by the substrate, the base layer, and the working structure layer, the working structure layer sensing a biological characteristic of an organism. The biometric sensor of claim 1, wherein a ratio of a pitch of the microchannels of each of the microchannel groups to a height of each of the cavities is between 2 and 5. The biometric sensor of claim 1, wherein the substrate has a plurality of integrated working circuits electrically connected to the working structural layer to generate a plurality of sensing signals. The biometric sensor of claim 3, wherein each of the sealing portions of the working structural layer is used as a sensing electrode, and the sensing electrodes are respectively arranged corresponding to the cavities, and Electrically connected to these integrated work And the working structure layer further includes a protective layer covering the sensing electrodes, wherein the living body and the sensing electrodes form a plurality of sensing capacitors, and the sensing capacitances are obtained by sensing the sensing capacitors Sensing signal. The biometric sensor of claim 3, wherein the substrate further has a plurality of first electrodes located above the integrated working circuits and electrically connected to the integrated working circuits, and respectively Corresponding to the cavities; and each of the sealing portions of the working structure layer is used as a second electrode, and the second electrodes are respectively arranged corresponding to the cavities and electrically connected to the integrated working circuits And the working structure layer further includes: a protective layer covering the second electrodes and the base structure layer, wherein the integrated working circuit outputs a driving signal to the first electrode or the second electrode, so that the first The two electrodes generate a plurality of first vibration waves, and the first vibration waves are converted into a plurality of second vibration waves opposite to the traveling direction of the first vibration wave by the biological interference, and the first electrodes and the second electrodes The electrodes sense the properties associated with the second vibrational waves to produce the sensing signals. The biometric sensor of claim 3, wherein the substrate further has a plurality of first electrodes located above the integrated working circuits and electrically connected to the integrated working circuits, and respectively Corresponding to the cavities; and each of the sealing portions of the working structure layer is used as a second electrode, and the second electrodes are respectively arranged corresponding to the cavities and electrically connected to the integrated working circuits And the working structure layer further includes: a plurality of piezoelectric vibration wave working elements located above the second electrodes, the piezoelectric vibration wave working elements emitting a plurality of first vibration waves to the living body to generate a plurality of opposite directions of the first vibration wave traveling a second vibration wave, the first electrodes and the second electrodes sense the properties associated with the second vibration waves to generate the sensing signals; and a protective layer covering the piezoelectric vibration wave working elements . The biometric sensor of claim 6, wherein each of the piezoelectric vibration wave working elements comprises: an insulating layer on the second electrode and the base structure layer; and a bottom electrode located at the bottom a second electrode above the insulating layer; a piezoelectric layer on the bottom electrode; and a top electrode on the piezoelectric layer, the top electrode and the bottom electrode being connected to a driving signal to make the piezoelectric The layer vibrates, thereby causing the second electrode to generate the first vibrational waves. The biometric sensor of claim 3, wherein the substrate further has a plurality of first electrodes located above the integrated working circuits and electrically connected to the integrated working circuits, and respectively Corresponding to the cavities; and each of the sealing portions of the working structure layer is used as a second electrode, and the second electrodes are respectively arranged corresponding to the cavities and electrically connected to the integrated working circuits And the working structure layer further comprises: a plurality of piezoelectric vibration wave working elements located above the second electrodes, wherein the integrated working circuit outputs a driving signal to the first electrode or the second electrode, so that The second electrode generates a plurality of first vibrations Waves, the first vibration waves are transformed by the living body into a plurality of second vibration waves opposite to a direction in which the first vibration wave travels, and the piezoelectric vibration wave working element sensing is related to the second vibration waves The sensing signals are generated by the nature; and a protective layer covering the piezoelectric vibration wave working elements. The biometric sensor of claim 8, wherein each of the piezoelectric vibration wave working elements comprises: an insulating layer on the second electrode and the base structure layer; and a bottom electrode located at the bottom Above the second electrode and on the insulating layer; a piezoelectric layer on the bottom electrode; and a top electrode on the piezoelectric layer, the piezoelectric layer sensing the properties related to the second vibration wave The sensing signals. The biometric sensor of claim 3, wherein the working structural layer further comprises: a plurality of piezoelectric vibration wave working elements located above the sealing portions, the piezoelectric vibration wave working elements are emitted a plurality of first vibration waves to the living body to generate a plurality of second vibration waves opposite to a direction in which the first vibration wave travels, and the piezoelectric vibration wave working elements further sense the properties related to the second vibration waves The sensing signals; and a protective layer covering the piezoelectric vibration wave working elements. The biometric sensor of claim 10, wherein each of the piezoelectric vibration wave working elements comprises: a bottom electrode on the sealing portion; a piezoelectric layer on the bottom electrode; a top electrode is disposed on the piezoelectric layer, the top electrode and the bottom electrode are connected to a driving signal to vibrate the piezoelectric layer to generate the first vibration wave, and the piezoelectric layer senses the second The sensing signals are generated by vibration wave related properties. The biometric sensor of claim 1, wherein the infrastructure layer comprises: a sacrificial mother layer on the substrate and formed with the cavities; and a cover layer located at the sacrificial mother The microchannel groups are formed on the layer, wherein the substrate has an etch stop layer in direct contact with the cavities and the sacrificial mother layer. The biometric sensor of claim 1, wherein each of the microchannels has a size of less than or equal to 2 microns and greater than or equal to 0.2 microns. A method for manufacturing a biometric sensor includes at least the steps of: providing a substrate; forming a base structure mother layer on the substrate; forming a plurality of microchannel groups on the base structure mother layer, wherein each of the microchannel groups Having a plurality of microchannels; removing a plurality of sacrificial layers of the base mother layer or portions of a sacrificial parent layer through the microchannel groups to form a base structural layer, and the layer located in the infrastructure layer a plurality of microchannel groups and a plurality of cavities arranged in a two-dimensional array, such that the microchannel groups are respectively in communication with the cavities; Forming a working structure layer on the base structure layer, and partially filling the working structure layer into the micro channel groups to form a plurality of sealing portions, each of the sealing portions comprising a plurality of sealing plugs and a sealing cover, the sealing cover The sealing plugs are joined together, the sealing plug is filled into the microchannel, and the sealing cover is located on a flat surface on the base structural layer such that a part of the material of the sealing portion is located in the structural layer Wherein each of the cavities is surrounded by the substrate, the base structural layer and the working structural layer, the working structural layer sensing a biological characteristic of an organism. The manufacturing method of claim 14, wherein a ratio of a pitch of the microchannels of each of the microchannel groups to a height of each of the cavities is between 2 and 5. The manufacturing method of claim 14, wherein the substrate has a plurality of integrated working circuits electrically connected to the working structural layer to generate a plurality of sensing signals. The manufacturing method according to claim 14, wherein the material of the sacrificial layer is aluminum, and in the step of removing each of the sacrificial layers through the microchannel groups, an isotropic etching technique using aluminum is used. The etching of the sacrificial layer is performed to remove the sacrificial layer vertically and laterally through the microchannel groups. The manufacturing method of claim 14, wherein the forming the base mother layer on the substrate comprises: forming the sacrificial layer on the substrate; and forming the sacrificial layer and the substrate Infrastructure layer. The manufacturing method of claim 14, wherein the step of forming the base mother layer on the substrate comprises: forming the sacrificial mother layer on the substrate; and forming a cap layer on the sacrificial mother layer, The substrate has an etch stop layer in direct contact with the cavities and the sacrificial mother layer. The manufacturing method of claim 14, wherein each of the microchannels has a size of less than or equal to 2 micrometers and greater than or equal to 0.2 micrometers.