CN110149582A - A kind of preparation method of MEMS structure - Google Patents
A kind of preparation method of MEMS structure Download PDFInfo
- Publication number
- CN110149582A CN110149582A CN201910415714.1A CN201910415714A CN110149582A CN 110149582 A CN110149582 A CN 110149582A CN 201910415714 A CN201910415714 A CN 201910415714A CN 110149582 A CN110149582 A CN 110149582A
- Authority
- CN
- China
- Prior art keywords
- groove
- piezoelectric
- layer
- vibration level
- mems structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title description 7
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 18
- 230000008021 deposition Effects 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 114
- 239000000463 material Substances 0.000 claims description 25
- 239000007772 electrode material Substances 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052451 lead zirconate titanate Inorganic materials 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 7
- 230000011218 segmentation Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 3
- 230000000717 retained effect Effects 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 11
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 238000006073 displacement reaction Methods 0.000 abstract description 7
- 239000010408 film Substances 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R17/00—Piezoelectric transducers; Electrostrictive transducers
- H04R17/02—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R31/00—Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Micromachines (AREA)
Abstract
This application provides a kind of methods for manufacturing MEMS (MEMS) structure, it include: to etch to form a plurality of the first parallel groove on the front of substrate, deposition forms Piezoelectric anisotropy vibration level on substrate, wherein, the Piezoelectric anisotropy vibration level formed in the bottom and side wall of the first groove constitutes corrugated portion, wherein, corrugated portion is formed on the whole surface region of Piezoelectric anisotropy vibration level；In the periphery of Piezoelectric anisotropy vibration level, etching forms the second groove on the substrate of exposing；The back side of substrate is etched to form cavity, the neighbouring periphery that cavity is arranged in of the second groove, Piezoelectric anisotropy vibration level is formed in right above cavity, also, the substrate supports Piezoelectric anisotropy vibration level of the part between the second groove and cavity.It manufactures obtained MEMS structure and improves displacement and deformation of the Piezoelectric anisotropy vibration level under acoustic pressure effect, reduce residual stress, and then improve the sensitivity of MEMS structure.
Description
Technical field
This application involves technical field of semiconductors, it particularly relates to a kind of MEMS (Microelectro
Mechanical Systems's writes a Chinese character in simplified form, i.e. MEMS) preparation method of structure.
Background technique
MEMS microphone (microphone) mainly includes condenser type and two kinds of piezoelectric type.MEMS piezoelectric microphone is to utilize micro- electricity
The microphone of sub- mechanical system technique and the preparation of piezoelectric membrane technology, due to using skills such as semiconductor planar technique and silicon bulk fabrications
Art, so its size is small, small in size, consistency is good.Bias voltage, work temperature are not needed also relative to condenser microphone simultaneously
It is big to spend range, the advantages that dust-proof, waterproof, but its remolding sensitivity is lower, restricts the development of MEMS piezoelectric microphone.Wherein, it shakes
The residual stress of dynamic film is a low major reason of its sensitivity greatly.
Aiming at the problem that residual stress and raising vibrating membrane deformation for how reducing piezoelectric type MEMS structure in the related technology,
Currently no effective solution has been proposed.
Summary of the invention
For the problem that residual stress in the related technology is larger, the application proposes a kind of preparation method of MEMS structure, energy
Residual stress is enough effectively reduced.
The technical solution of the application is achieved in that
According to the one aspect of the application, a kind of method for manufacturing MEMS (MEMS) structure is provided, comprising:
Etching forms a plurality of the first parallel groove on the front of substrate, and deposition forms Piezoelectric anisotropy over the substrate
Vibration level, wherein the Piezoelectric anisotropy vibration level formed in the bottom and side wall of first groove constitutes corrugated portion,
Wherein, the corrugated portion is formed on the whole surface region of the Piezoelectric anisotropy vibration level；
In the periphery of the Piezoelectric anisotropy vibration level, etching forms the second groove on the substrate of exposing；
The back side of the substrate is etched to form cavity, the neighbouring periphery that the cavity is arranged in of second groove, institute
It states Piezoelectric anisotropy vibration level to be formed in right above the cavity, also, the portion between second groove and the cavity
Piezoelectric anisotropy vibration level described in the substrate supports divided.
Wherein, the method for forming the Piezoelectric anisotropy vibration level includes:
Laying down support material forms vibration supporting layer on the substrate with first groove；
First electrode material is deposited on the vibration supporting layer, and patterns the first electrode material to form the
One electrode layer；
Piezoelectric material is formed in first electrode layer disposed thereon, and patterns the piezoelectric material to form the first piezoelectricity
Layer；
The first piezoelectric layer disposed thereon formed second electrode material, and pattern the second electrode material with
Form the second electrode lay.
Wherein, the vibration supporting layer that is formed in the bottom and side wall of first groove, the first electrode layer,
First piezoelectric layer and the second electrode lay constitute the corrugated portion.
Wherein, etching removal is formed in the bottom and side wall of first groove the first electrode layer, described the
One piezoelectric layer and the second electrode lay, the vibration supporting layer being retained in the bottom and side wall of first groove are constituted
The corrugated portion.
Wherein, wherein the central plane of first groove passes through the central point of the Piezoelectric anisotropy vibration level, and
And the Piezoelectric anisotropy vibration level is divided into two regions.
Wherein, a plurality of parallel first groove is set as equidistant.
Wherein, the method for the Piezoelectric anisotropy vibration level is formed further include:
It etches the substrate and forms a plurality of parallel third groove, wherein the central plane of a third groove passes through
The central point of the Piezoelectric anisotropy vibration level, first groove and the third groove divide the Piezoelectric anisotropy vibration level
At four regions；
Deposition forms the Piezoelectric anisotropy vibration on the substrate with first groove and the third groove
Layer.
Wherein, the method for the manufacture MEMS structure further includes etching the first electrode layer and the second electrode respectively
For layer to form the 4th groove, the first electrode layer and the second electrode lay are isolated at least two points by the 4th groove
The subregion of area, the mutual corresponding first electrode layer and the second electrode lay constitutes electrode layer pair, is then sequentially connected in series more
A electrode pair.
Wherein, it is described vibration supporting layer include silicon nitride, silica, monocrystalline silicon, polysilicon constitute single layer or multilayer
Structure of composite membrane.
Wherein, the vibration supporting layer includes the electrode material of piezoelectric material layer and the upper and lower positioned at the piezoelectric material layer
The bed of material, wherein the piezoelectric material layer includes zinc oxide, aluminium nitride, organic piezoelectric film, lead zirconate titanate (PZT) or Ca-Ti ore type
One or more layers in piezoelectric film.
Wherein, the method for the manufacture MEMS structure further includes that etching formation penetrates the multiple of the Piezoelectric anisotropy vibration level
Through-hole, wherein the multiple through-hole is compared to the corrugated portion closer to the center of the Piezoelectric anisotropy vibration level.
Wherein, etching forms and is continuous through the vibration supporting layer, the first electrode layer, first piezoelectric layer and institute
State the multiple through-hole of the second electrode lay.
Wherein, etching forms the of the lower surface that the first electrode layer is extended to from the upper surface of the second electrode lay
Five grooves, and the multiple through-hole is located in the 5th groove, and the multiple through-hole only runs through the vibration supporting layer.
Wherein, the center that the segmentation straight line that the multiple through-hole is constituted passes through the Piezoelectric anisotropy vibration level is connected,
In, the central plane of at least one first groove passes through the central point of the Piezoelectric anisotropy vibration level, first groove
Central plane it is coplanar with the segmentation straight line.
In MEMS structure manufactured by above method, Piezoelectric anisotropy vibration level is formed in the surface of cavity and is located at
Among second groove, so that the section substrate materials for support Piezoelectric anisotropy vibration level between the second groove and cavity, in turn
So that Piezoelectric anisotropy vibration level is changed into class simply-supported state by clamped state, this improves Piezoelectric anisotropy vibration levels in acoustic pressure
Displacement and deformation under effect, reduce residual stress, and then improve the sensitivity of MEMS structure.
Detailed description of the invention
In order to illustrate the technical solutions in the embodiments of the present application or in the prior art more clearly, below will be to institute in embodiment
Attached drawing to be used is needed to be briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the application
Example, for those of ordinary skill in the art, without creative efforts, can also obtain according to these attached drawings
Obtain other attached drawings.
When reading in conjunction with the accompanying drawings, each side of the application may be better understood according to the following detailed description
Face.It is emphasized that all parts are not drawn on scale, and are for illustration purposes only according to the standard practices of industry.It is real
On border, in order to clearly discuss, the size of all parts can arbitrarily increase or reduce.
Fig. 1 is the stereoscopic schematic diagram according to the MEMS structure of some embodiments of the present application；
Fig. 2 is the sectional stereogram of the MEMS structure along line A-A of Fig. 1；
Fig. 3 is the enlarged diagram of corrugated portion shown in Fig. 2；
Fig. 4, Fig. 5 and Fig. 7 are the sectional views according to the intermediate stage of the formation MEMS structure of some embodiments of the present application；
Fig. 6 is the stereoscopic schematic diagram according to the MEMS structure of other embodiments of the application.
Specific embodiment
Below in conjunction with the attached drawing in the embodiment of the present application, technical solutions in the embodiments of the present application carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of embodiments of the present application, instead of all the embodiments.It is based on
Embodiment in the application, those of ordinary skill in the art's every other embodiment obtained belong to the application protection
Range.
Following disclosure provides many different embodiments or example to realize the different characteristic of the application.Below will
The particular instance of element and arrangement is described to simplify the application.Certainly these are only that example is not intended to be limiting.For example, element
Size is not limited to disclosed range or value, but performance needed for possibly relying on process conditions and/or device.In addition, with
In lower description, above second component or the upper formation first component may include that the first component and second component directly contact shape
At embodiment, and also may include additional component can be formed between the first component and second component so that
The embodiment that the first component and second component can be not directly contacted with.It, can be any in different sizes in order to simplified and clear
Draw all parts in ground.
In addition, for ease of description, spatially relative term such as " ... under (beneath) ", " in ... lower section
(below) ", " lower part (lower) ", " ... on (above) ", " top (upper) " etc. can be used for describing attached drawing herein
Shown in an element or component and another (or other) element or component relationship.Spatially relative term is intended to include
Other than orientation shown in the drawings, the different direction of the device in use or in operation.Device can otherwise be determined
To (be rotated by 90 ° or in other directions), spatial relative descriptor used herein can similarly make respective explanations.In addition, art
Language " by ... it is made " it can mean " comprising " or " consist of ".
According to an embodiment of the present application, a kind of MEMS structure 100 is provided, residual stress can reduced and improving piezoelectricity
While complex vibration layer 20 strains, reduce low frequency sound leakage, improves the stability of microphone work and preparation.
Referring to Fig. 1 and Fig. 2, wherein Fig. 2 be Fig. 1 the sectional stereogram along line A-A.Figures 1 and 2 show that according to this Shen
The MEMS structure of one embodiment please.The MEMS structure described in detail below.
MEMS structure includes substrate 10, wherein substrate 10 has the cavity 11 and the first groove 12 of neighbouring setting, and first is recessed
Slot 12 is formed in the periphery of cavity 11.Substrate 10 include silicon or any suitable silicon base compound or derivative (such as silicon wafer,
Polysilicon on SOI, SiO2/Si).
Piezoelectric anisotropy vibration level 20 is formed in the surface of cavity 11 and is located among the first groove 12.And piezoelectricity is multiple
Closing vibration level 20 has corrugated portion 26.It is the enlarged diagram of corrugated portion 26 referring to Fig. 3, Fig. 3.Corrugated portion 26 will with
Lower detailed description.
In the MEMS structure of above embodiments, Piezoelectric anisotropy vibration level 20 is formed in the surface of cavity 11 and is located at
Among first groove 12, so that the section substrate materials for support Piezoelectric anisotropy vibration level between the first groove 12 and cavity 11
20, so that Piezoelectric anisotropy vibration level 20 is changed into class simply-supported state by clamped state, this improves Piezoelectric anisotropy vibrations
Displacement and deformation of the layer 20 under acoustic pressure effect, and then improve the sensitivity of MEMS structure.Moreover, Piezoelectric anisotropy vibration level 20
Corrugated portion 26 vibrating membrane of " tight " can be made to become " soft ", thus under same acoustic pressure, Piezoelectric anisotropy vibration level 20
Each region obtains biggish displacement and deformation, and then more improves the sensitivity of MEMS structure.
The process described in detail below for forming the MEMS structure.In order to clearly illustrate, following figure 4, Fig. 5
It is not drawn according to ratio shown in FIG. 1 with Fig. 7, but relatively increases the size of the first groove 13, in order to understand
And explanation.
It is comprehensive referring to fig. 4, in some embodiments, etch substrate 10 to form a plurality of the second parallel groove 13 and in addition
A plurality of parallel third groove 14.Wherein the central plane of second groove 12 passes through the central point of substrate 10, the second groove
Substrate 10 is divided into two regions by 13.And wherein the central plane of a third groove 14 passes through 10 central point of substrate, the
The substrate 10 is divided into four regions by two grooves 13 and third groove 14.In some embodiments, a plurality of parallel second is recessed
Slot 13 is set as equidistant.In some embodiments, a plurality of parallel third groove 14 is set as equidistant.
Next, referring to Fig. 5.It is sequentially depositing and patterns on the substrate 10 with the second groove 13 and third groove 14
Form vibration supporting layer 24, first electrode layer 21, the first piezoelectric layer 22 and the second electrode lay 23.Wherein, supporting layer 24, the are vibrated
One electrode layer 21, the first piezoelectric layer 22 and the second electrode lay 23 constitute Piezoelectric anisotropy vibration level 20.It is worth noting that, piezoelectricity is multiple
Closing vibration level 20 includes the part for being formed in the bottom and side wall of the second groove 13 and third groove 14, i.e., ripple shown in Fig. 3
Part 26.
It is formed in the bottom and side wall of the second groove 13 and third groove 14 since Piezoelectric anisotropy vibration level 20 has
Piezoelectric anisotropy vibration level 20 is divided into four regions, the side in each region by part, i.e. corrugated portion 26, these corrugated portions 26
Edge is connected by corrugated portion 26, so that the stress of entire Piezoelectric anisotropy vibration level 20 is discharged, while being reached
The effect of class cantilever beam structure, so that the Piezoelectric anisotropy vibration level 20 of " tight " becomes " soft ".In this way under the effect of same acoustic pressure,
Each region of Piezoelectric anisotropy vibration level 20 obtains biggish displacement and strain, has also reached and has improved the sensitive of MEMS structure
The effect of degree.
In further embodiments, can etch the second groove 13 of removal and first electrode layer 21 in third groove 14,
First piezoelectric layer 22 and third electrode layer 23.Only vibration supporting layer 24 is retained in the second groove 13 and third groove 14.?
In this case, corrugated portion 26 only includes the material of vibration supporting layer 24.
In some embodiments, substrate 10 can only have the second groove 13, without third groove 14.
In some embodiments, vibration supporting layer 24 includes silicon nitride (Si3N4), silica, monocrystalline silicon, polysilicon constitute
Single layer or MULTILAYER COMPOSITE membrane structure or other suitable backing materials.
In some embodiments, vibration supporting layer 24 may include piezoelectric material layer and positioned at the piezoelectric material layer up and down
The electrode material layer of side.Wherein, piezoelectric material layer includes zinc oxide, aluminium nitride, organic piezoelectric film, lead zirconate titanate (PZT), calcium titanium
One or more layers or other suitable material in mine type piezoelectric film.In this case, which plays simultaneously
The effect of support and piezoelectricity.
In some embodiments, the first piezoelectric layer 22 can be by the pressure conversion of application at voltage, and first electrode layer 21
Generated voltage can be sent to other integrated circuit device with the second electrode lay 23.In some embodiments, the first piezoelectricity
Layer 22 includes zinc oxide, aluminium nitride, organic piezoelectric film, lead zirconate titanate (PZT), perouskite type piezoelectric film or other suitable materials
Material.First electrode layer 21 and the second electrode lay 23 include aluminium, gold, platinum, molybdenum, titanium, chromium and composite membrane that they are formed or other
Suitable material.
Next, not being formed in the one of the middle section of substrate 10 in the second groove 13 and third groove 14 referring to Fig. 6
In a little embodiments, etches to be formed continuously to penetrate in the middle section of substrate 10 and vibrate supporting layer 24, the pressure of first electrode layer 21, first
Multiple through-holes 25 of electric layer 22, the second electrode lay 23.Or it can also etch to be formed from the second electricity in the middle section of substrate 10
The upper surface of pole layer 23 extends to the 5th groove (not shown) of the lower surface of first electrode layer 21, and multiple through-holes 25 are located at
In 5th groove, in this case, multiple through-holes 25 are only through vibration supporting layer 24.In other words, in the embodiment of the present application
Multiple through-holes 25 can continuously penetrate vibration supporting layer 24, first electrode layer 21, the first piezoelectric layer 22, the second electrode lay 23 etc.
Four layers can also only penetrate a vibration supporting layer 24.
Multiple through-holes 25 are compared to corrugated portion 26 closer to the center of Piezoelectric anisotropy vibration level 20.In some embodiments
In, connect the central point that the segmentation straight line that multiple through-holes 25 are constituted passes through Piezoelectric anisotropy vibration level 20.Wherein, at least one the
The central plane of two grooves 13 passes through the central point of Piezoelectric anisotropy vibration level 20, and the central plane of the second groove 13 and the segmentation are straight
Line is coplanar.Multiple through-hole 25 discharges the stress of the middle section of Piezoelectric anisotropy vibration level 20, while reaching
The effect of class cantilever beam structure.In some embodiments, it is convenient to omit or skip the step of forming multiple through-hole 25.
Next, in some embodiments, etching vibration supporting layer 24, first electrode layer 21, the first piezoelectric layer 22 and the
Two electrode layers 23, thus the substrate 10 of exposed portion.
Referring to such as 7, in some embodiments, in the outer of first electrode layer 21, the first piezoelectric layer 22 and the second electrode lay 23
It encloses, etched on the substrate 10 of exposing and forms the first groove 12 extended in substrate 10.In other embodiments, may be used
To pass through etching first electrode layer 21, the first piezoelectric layer 22 and the second electrode lay 23, to expose the periphery of vibration supporting layer 24
Part.Then in the outer groove placing etching formation and extending in substrate 10 of vibration supporting layer 24, which is located at substrate 10
Interior part constitutes first groove 12.Then it removes the part of the substrate 10 outside the first groove 12 and vibrates supporting layer 24
Part, to obtain the first groove 12 shown in Fig. 7.
In some embodiments, the back side of substrate 10 is etched to form cavity 11, and cavity 11 is arranged in the first groove 12
Periphery.Also, vibration supporting layer 24, first electrode layer 21, the first piezoelectric layer 22 and the second electrode lay 23 are being formed in cavity 11 just
Top.Particularly: being sequentially depositing to form insulating materials (not shown) at the back side of substrate 10 by standard photolithography process
And photoresist, the photoresist is patterned to form mask layer, the insulating materials and substrate 10 of exposing is etched, to form cavity
11.Then the insulating materials 24 at the back side of substrate 10 is removed.Substrate in Fig. 7, between the second groove 12 and cavity 11
10 part it is small-sized so that Piezoelectric anisotropy vibration level 20 is contacted and is supported with substrate 10 with being only capable of zonule, to mention
High displacement and deformation of the Piezoelectric anisotropy vibration level 20 under acoustic pressure effect.
Based on above embodiments, referring to Fig. 3, after forming cavity 11, Piezoelectric anisotropy vibration level 20 is formed as such as Fig. 3 institute
The corrugated portion 26 shown.Piezoelectric anisotropy vibration level 20 is formed in the surface of cavity 11 and is located among the first groove 12, makes
The section substrate materials for support Piezoelectric anisotropy vibration level 20 between the first groove 12 and cavity 11 is obtained, so that piezoelectricity is multiple
It closes vibration level 20 and class simply-supported state is changed by clamped state, this improves Piezoelectric anisotropy vibration levels 20 under acoustic pressure effect
Displacement and deformation, and then improve the sensitivity of MEMS structure.
Further, the method for manufacturing MEMS structure further include etch respectively first electrode layer 21 and the second electrode lay 23 with
The 4th groove (not shown) is formed, first electrode layer 21 and the second electrode lay 23 are isolated at least two points by the 4th groove
The subregion of area, mutual corresponding first electrode layer 21 and the second electrode lay 23 constitutes electrode layer pair, is then sequentially connected in series multiple electricity
It is extremely right, so that the piezoelectric thin film transducer of multiple cantilever beam structures realizes series connection electrically, to further improve
The sensitivity of MEMS structure.
In conclusion, using the method for the manufacture MEMS structure, reducing pressure by means of the above-mentioned technical proposal of the application
It replies the residual stress for closing vibration level 20 by cable, deformation of the Piezoelectric anisotropy vibration level 20 under acoustic pressure effect is improved, to improve
The sensitivity of MEMS structure.
The foregoing is merely the preferred embodiments of the application, not to limit the application, all essences in the application
Within mind and principle, any modification, equivalent replacement, improvement and so on be should be included within the scope of protection of this application.
Claims (14)
1. a kind of method for manufacturing MEMS (MEMS) structure characterized by comprising
Etching forms a plurality of the first parallel groove on the front of substrate, and deposition forms Piezoelectric anisotropy vibration over the substrate
Layer, wherein the Piezoelectric anisotropy vibration level formed in the bottom and side wall of first groove constitutes corrugated portion,
In, the corrugated portion is formed on the whole surface region of the Piezoelectric anisotropy vibration level；
In the periphery of the Piezoelectric anisotropy vibration level, etching forms the second groove on the substrate of exposing；
The back side of the substrate is etched to form cavity, the neighbouring periphery that the cavity is arranged in of second groove, the pressure
Conjunction vibration level is replied by cable to be formed in right above the cavity, also, the part between second groove and the cavity
Piezoelectric anisotropy vibration level described in the substrate supports.
2. the method for manufacture MEMS structure according to claim 1, which is characterized in that form the Piezoelectric anisotropy vibration level
Method include:
Laying down support material forms vibration supporting layer on the substrate with first groove；
First electrode material is deposited on the vibration supporting layer, and patterns the first electrode material to form the first electricity
Pole layer；
Piezoelectric material is formed in first electrode layer disposed thereon, and patterns the piezoelectric material to form the first piezoelectric layer；
Second electrode material is formed in the first piezoelectric layer disposed thereon, and patterns the second electrode material to be formed
The second electrode lay.
3. it is according to claim 2 manufacture MEMS structure method, which is characterized in that first groove bottom and
The vibration supporting layer, the first electrode layer, first piezoelectric layer and the second electrode lay formed on side wall is constituted
The corrugated portion.
4. the method for manufacture MEMS structure according to claim 2, which is characterized in that etching removal is in first groove
Bottom and side wall on the first electrode layer, first piezoelectric layer and the second electrode lay that are formed, be retained in described
The vibration supporting layer in the bottom and side wall of first groove constitutes the corrugated portion.
5. the method for manufacture MEMS structure according to claim 1, which is characterized in that wherein first groove
Central plane passes through the central point of the Piezoelectric anisotropy vibration level, and the Piezoelectric anisotropy vibration level is divided into the area Liang Ge
Domain.
6. the method for manufacture MEMS structure according to claim 1, which is characterized in that a plurality of parallel first groove
It is set as equidistant.
7. the method for manufacture MEMS structure according to claim 1, which is characterized in that form the Piezoelectric anisotropy vibration level
Method further include:
It etches the substrate and forms a plurality of parallel third groove, wherein described in the central plane process of a third groove
The Piezoelectric anisotropy vibration level is divided into four by the central point of Piezoelectric anisotropy vibration level, first groove and the third groove
A region；
Deposition forms the Piezoelectric anisotropy vibration level on the substrate with first groove and the third groove.
8. the method for manufacture MEMS structure according to claim 2, which is characterized in that the method for the manufacture MEMS structure
It further include etching the first electrode layer and the second electrode lay respectively to form the 4th groove, the 4th groove will be described
First electrode layer and the second electrode lay are isolated at least two subregions, the mutual corresponding first electrode layer and described
The subregion of two electrode layers constitutes electrode layer pair, is then sequentially connected in series multiple electrodes pair.
9. MEMS structure according to claim 2, which is characterized in that the vibration supporting layer include silicon nitride, silica,
The single layer or MULTILAYER COMPOSITE membrane structure that monocrystalline silicon, polysilicon are constituted.
10. MEMS structure according to claim 2, which is characterized in that the vibration supporting layer include piezoelectric material layer and
Positioned at the electrode material layer of the upper and lower of the piezoelectric material layer, wherein the piezoelectric material layer include zinc oxide, aluminium nitride,
One or more layers in organic piezoelectric film, lead zirconate titanate (PZT) or perouskite type piezoelectric film.
11. the method for manufacture MEMS structure according to claim 2, which is characterized in that the side of the manufacture MEMS structure
Method further includes that etching forms the multiple through-holes for penetrating the Piezoelectric anisotropy vibration level, wherein the multiple through-hole is compared to described
Center of the corrugated portion closer to the Piezoelectric anisotropy vibration level.
12. the method for manufacture MEMS structure according to claim 11, which is characterized in that etching formation is continuous through described
Vibrate the multiple through-hole of supporting layer, the first electrode layer, first piezoelectric layer and the second electrode lay.
13. the method for manufacture MEMS structure according to claim 11, which is characterized in that etching is formed from second electricity
The upper surface of pole layer extends to the 5th groove of the lower surface of the first electrode layer, and the multiple through-hole is located at described the
In five grooves, the multiple through-hole only runs through the vibration supporting layer.
14. MEMS structure according to claim 11, which is characterized in that it is straight to connect the segmentation that the multiple through-hole is constituted
Line passes through the center of the Piezoelectric anisotropy vibration level, wherein the central plane of at least one first groove passes through the pressure
Reply the central point for closing vibration level by cable, the central plane of first groove is coplanar with the segmentation straight line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910415714.1A CN110149582B (en) | 2019-05-18 | 2019-05-18 | Preparation method of MEMS structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910415714.1A CN110149582B (en) | 2019-05-18 | 2019-05-18 | Preparation method of MEMS structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110149582A true CN110149582A (en) | 2019-08-20 |
| CN110149582B CN110149582B (en) | 2020-12-25 |
Family
ID=67591848
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910415714.1A Active CN110149582B (en) | 2019-05-18 | 2019-05-18 | Preparation method of MEMS structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110149582B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113460949A (en) * | 2021-06-30 | 2021-10-01 | 青岛芯笙微纳电子科技有限公司 | MEMS piezoelectric chip and MEMS device |
| WO2021213095A1 (en) * | 2020-04-20 | 2021-10-28 | 海信视像科技股份有限公司 | Display device and sound on display |
| WO2022110358A1 (en) * | 2020-11-30 | 2022-06-02 | 瑞声声学科技(深圳)有限公司 | Piezoelectric mems microphone and array thereof |
| WO2022110420A1 (en) * | 2020-11-30 | 2022-06-02 | 瑞声声学科技(深圳)有限公司 | Piezoelectric mems microphone, and array thereof and preparation method therefor |
| WO2024040679A1 (en) * | 2022-08-26 | 2024-02-29 | 见闻录(浙江)半导体有限公司 | Bulk acoustic resonator, fabrication method therefor, filter, and electronic device |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1812661A (en) * | 2005-12-29 | 2006-08-02 | 电子科技大学 | Acoustic frequency directional ultrasonic wave Loudspeaker |
| CN201063346Y (en) * | 2007-02-09 | 2008-05-21 | 中国科学院声学研究所 | Sensing vibration diaphragm for dual polarization partitioning electrode |
| US20090185701A1 (en) * | 2008-01-18 | 2009-07-23 | Industrial Technology Research Institute | Flexible piezoelectric sound-generating devices |
| CN103369441A (en) * | 2012-04-04 | 2013-10-23 | 英飞凌科技股份有限公司 | MEMS device, MEMS structure and method of making MEMS device |
| CN103843370A (en) * | 2011-08-30 | 2014-06-04 | 高通Mems科技公司 | Piezoelectric microphone fabricated on glass |
| US20160362292A1 (en) * | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| CN107511318A (en) * | 2017-09-28 | 2017-12-26 | 瑞声科技(新加坡)有限公司 | Piezoelectric ultrasonic transducer and preparation method thereof |
| CN206948610U (en) * | 2017-06-16 | 2018-01-30 | 歌尔科技有限公司 | A kind of piezoelectric microphones and electronic equipment |
| CN109704269A (en) * | 2017-10-25 | 2019-05-03 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method, electronic device |
-
2019
- 2019-05-18 CN CN201910415714.1A patent/CN110149582B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1812661A (en) * | 2005-12-29 | 2006-08-02 | 电子科技大学 | Acoustic frequency directional ultrasonic wave Loudspeaker |
| CN201063346Y (en) * | 2007-02-09 | 2008-05-21 | 中国科学院声学研究所 | Sensing vibration diaphragm for dual polarization partitioning electrode |
| US20090185701A1 (en) * | 2008-01-18 | 2009-07-23 | Industrial Technology Research Institute | Flexible piezoelectric sound-generating devices |
| CN103843370A (en) * | 2011-08-30 | 2014-06-04 | 高通Mems科技公司 | Piezoelectric microphone fabricated on glass |
| CN103369441A (en) * | 2012-04-04 | 2013-10-23 | 英飞凌科技股份有限公司 | MEMS device, MEMS structure and method of making MEMS device |
| US20160362292A1 (en) * | 2015-06-15 | 2016-12-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and manufacturing method thereof |
| CN206948610U (en) * | 2017-06-16 | 2018-01-30 | 歌尔科技有限公司 | A kind of piezoelectric microphones and electronic equipment |
| CN107511318A (en) * | 2017-09-28 | 2017-12-26 | 瑞声科技(新加坡)有限公司 | Piezoelectric ultrasonic transducer and preparation method thereof |
| CN109704269A (en) * | 2017-10-25 | 2019-05-03 | 中芯国际集成电路制造(上海)有限公司 | A kind of MEMS device and preparation method, electronic device |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021213095A1 (en) * | 2020-04-20 | 2021-10-28 | 海信视像科技股份有限公司 | Display device and sound on display |
| WO2022110358A1 (en) * | 2020-11-30 | 2022-06-02 | 瑞声声学科技(深圳)有限公司 | Piezoelectric mems microphone and array thereof |
| WO2022110420A1 (en) * | 2020-11-30 | 2022-06-02 | 瑞声声学科技(深圳)有限公司 | Piezoelectric mems microphone, and array thereof and preparation method therefor |
| CN113460949A (en) * | 2021-06-30 | 2021-10-01 | 青岛芯笙微纳电子科技有限公司 | MEMS piezoelectric chip and MEMS device |
| WO2024040679A1 (en) * | 2022-08-26 | 2024-02-29 | 见闻录(浙江)半导体有限公司 | Bulk acoustic resonator, fabrication method therefor, filter, and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110149582B (en) | 2020-12-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110149582A (en) | A kind of preparation method of MEMS structure | |
| CN110099344B (en) | MEMS structure | |
| US7902615B2 (en) | Micromechanical structure for receiving and/or generating acoustic signals, method for producing a micromechanical structure, and use of a micromechanical structure | |
| US10065852B2 (en) | MEMS device and manufacturing method thereof | |
| US20090302716A1 (en) | Piezoelectric device | |
| CN110099345B (en) | MEMS structure | |
| CN110149574B (en) | MEMS structure | |
| CN110798788B (en) | MEMS structure and forming method thereof | |
| JP2008517523A (en) | Silicon microphone | |
| US20220369041A1 (en) | Mems device with enhanced membrane structure and method of forming the same | |
| CN110113703B (en) | Preparation method of MEMS structure | |
| CN110113702B (en) | Manufacturing method of MEMS structure | |
| CN110113699B (en) | Preparation method of MEMS structure | |
| CN209748812U (en) | MEMS structure | |
| CN209627695U (en) | A kind of MEMS structure | |
| CN209748811U (en) | MEMS structure | |
| CN111901736B (en) | MEMS structure | |
| US9331668B2 (en) | Vibrator with a beam-shaped portion above a recess in a substrate, and oscillator using same | |
| CN110677795A (en) | MEMS structure | |
| CN212324361U (en) | MEMS structure | |
| CN111866684B (en) | MEMS structure | |
| CN210609703U (en) | MEMS structure | |
| CN209608857U (en) | A kind of MEMS structure | |
| KR101573518B1 (en) | Ultrasonic transducer and fabricating method thereof | |
| KR101893486B1 (en) | Rigid Backplate Structure Microphone and Method of Manufacturing the Same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |