TWI593040B - Substrate processing method, substrate processing system, and computer-readable storage medium storing a substrate processing program - Google Patents
Substrate processing method, substrate processing system, and computer-readable storage medium storing a substrate processing program Download PDFInfo
- Publication number
- TWI593040B TWI593040B TW105104685A TW105104685A TWI593040B TW I593040 B TWI593040 B TW I593040B TW 105104685 A TW105104685 A TW 105104685A TW 105104685 A TW105104685 A TW 105104685A TW I593040 B TWI593040 B TW I593040B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- back surface
- processing
- peripheral portion
- substrate processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
- H01L21/0209—Cleaning of wafer backside
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Description
本發明係有關用以去除基板背面之去除對象物的基板處理方法、基板處理系統及記憶有基板處理程式之電腦可讀取記憶媒體。The present invention relates to a substrate processing method for removing an object to be removed on a back surface of a substrate, a substrate processing system, and a computer readable memory medium in which a substrate processing program is stored.
自以往，於製造半導體零件或平板顯示器等的情形，在以基板固持機構固持住半導體晶圓或液晶基板等之基板的狀態下，對基板表面反覆進行蝕刻處理、成膜處理及清洗處理等之各種處理。In the case of manufacturing a semiconductor component, a flat panel display, or the like, in a state in which a substrate such as a semiconductor wafer or a liquid crystal substrate is held by a substrate holding mechanism, an etching process, a film formation process, a cleaning process, and the like are repeatedly performed on the surface of the substrate. Various treatments.
於是，在對基板進行各種處理時，由於基板背面接觸到基板固持機構，因此會在基板背面附著粒子等之污染物質，或在基板背面形成凸部。Therefore, when various processes are performed on the substrate, since the back surface of the substrate contacts the substrate holding mechanism, contaminants such as particles are attached to the back surface of the substrate, or convex portions are formed on the back surface of the substrate.
該附著於基板背面之污染物質、或形成於基板背面之凸部存在有對於基板的各種處理造成不良影響之虞。因此，利用旋轉刷對基板背面施加清洗或拋光等之處理，以從基板背面去除污染物質或凸部等之去除對象物。此時，由於基板表面使用於形成圖案，因此無法以吸附住基板表面方式來固持基板，而一面以基板支撐體支撐住基板外周端緣，一面以刷子對於基板背面之內周部往外周側的既定範圍進行處理(例如參照專利文獻1)。 【先前技術文獻】 【專利文獻】The contaminant adhering to the back surface of the substrate or the convex portion formed on the back surface of the substrate may adversely affect various processes of the substrate. Therefore, a process such as cleaning or polishing is applied to the back surface of the substrate by a rotating brush to remove an object to be removed such as a contaminant or a convex portion from the back surface of the substrate. In this case, since the surface of the substrate is used for patterning, the substrate cannot be held by adsorbing the surface of the substrate, and the outer peripheral edge of the substrate is supported by the substrate support while the outer peripheral side of the inner peripheral portion of the back surface of the substrate is brushed. The predetermined range is processed (for example, refer to Patent Document 1). [Prior Art Literature] [Patent Literature]
【專利文獻1】日本特開平10-209254號公報[Patent Document 1] Japanese Patent Laid-Open No. Hei 10-209254
[發明所欲解決之課題][Problems to be solved by the invention]
然而，以基板支撐體支撐住基板外周端緣，而以刷子對於基板背面之內周部往外周側的既定範圍進行處理時，刷子會於基板外周端附近接觸至基板支撐體，而無法以刷子處理到基板外周端附近。However, when the outer peripheral edge of the substrate is supported by the substrate support, and the brush is treated to a predetermined range on the outer peripheral side of the inner peripheral portion of the back surface of the substrate, the brush contacts the substrate support near the outer peripheral end of the substrate, and the brush cannot be used. The treatment is performed near the outer peripheral end of the substrate.
因此，以往難以高精度地處理到基板外周端，無法良好地去除基板外周端附近的去除對象物。又，由於去除對象物之殘留，以致於基板表面的處理精度因為殘留於基板背面之污染物質或凸部的影響而降低，有對於基板表面處理造成不良影響之虞。 [解決課題之手段]Therefore, conventionally, it has been difficult to process the outer peripheral end of the substrate with high precision, and the object to be removed in the vicinity of the outer peripheral end of the substrate cannot be satisfactorily removed. Further, since the removal of the object remains, the processing accuracy of the surface of the substrate is lowered by the influence of the contaminant or the convex portion remaining on the back surface of the substrate, which may adversely affect the surface treatment of the substrate. [Means for solving the problem]
因此，本發明提供一種用以去除基板背面之去除對象物的基板處理方法，其包含有：背面處理步驟，以基板支撐體支撐住基板外周端緣，於基板背面之內周部到基板支撐體附近的既定之處理範圍，將去除對象物去除，而不去除相較於該既定之處理範圍為外周側的去除對象物；及背面周緣部處理步驟，於基板背面之外周端往內周側的既定之處理範圍，將去除對象物去除，而不去除相較於該既定之處理範圍為內周側的去除對象物；且在該基板處理方法設置：背面處理步驟之處理範圍與背面周緣部處理步驟之處理範圍二者重疊的重疊處理範圍；並且在該背面處理步驟之後進行基板的翻轉，然後進行該背面周緣部處理步驟，或者在該背面周緣部處理步驟之後進行基板的翻轉，然後進行該背面處理步驟。Therefore, the present invention provides a substrate processing method for removing an object to be removed on a back surface of a substrate, comprising: a back surface processing step of supporting an outer peripheral edge of the substrate with the substrate support, and an inner peripheral portion of the back surface of the substrate to the substrate support In the vicinity of the predetermined processing range, the object to be removed is removed without removing the object to be removed on the outer peripheral side from the predetermined processing range; and the peripheral peripheral portion is processed on the outer peripheral side of the outer peripheral side of the substrate In the predetermined processing range, the removed object is removed without removing the object to be removed on the inner peripheral side compared to the predetermined processing range; and in the substrate processing method setting: the processing range of the back surface processing step and the processing of the back peripheral portion The processing range of the step overlaps the overlap processing range; and after the back surface processing step, the substrate is reversed, and then the back peripheral portion processing step is performed, or the substrate is turned over after the back peripheral portion processing step, and then the Back processing steps.
又，本發明提供一種用以去除基板背面之去除對象物的基板處理系統，其具有：背面處理裝置，以基板支撐體支撐住基板外周端緣，於基板背面之內周部到基板支撐體附近的既定之處理範圍，將去除對象物去除，而不去除相較於該既定之處理範圍為外周側的去除對象物；背面周緣部處理裝置，於基板背面之外周端往內周側的既定之處理範圍，將去除對象物去除，而不去除相較於該既定之處理範圍為內周側的去除對象物；及基板翻轉裝置，用以使基板翻轉；且該基板處理系統設有：背面處理裝置之處理範圍與背面周緣部處理裝置之處理範圍二者重疊的重疊處理範圍；並且在利用該背面處理裝置進行去除處理之後，利用該基板翻轉裝置進行基板的翻轉，然後利用該背面周緣部處理裝置進行去除處理，或者在利用該背面周緣部處理裝置進行去除處理之後，利用該基板翻轉裝置進行基板的翻轉，然後利用該背面處理裝置進行去除處理。Moreover, the present invention provides a substrate processing system for removing an object to be removed on a back surface of a substrate, comprising: a back surface processing device for supporting an outer peripheral edge of the substrate with a substrate support, and an inner peripheral portion of the back surface of the substrate to the vicinity of the substrate support The predetermined processing range removes the removed object without removing the object to be removed on the outer peripheral side from the predetermined processing range; the peripheral peripheral portion processing device is formed on the inner peripheral side of the outer peripheral side of the substrate back surface a processing range for removing the removed object without removing the object to be removed on the inner peripheral side compared to the predetermined processing range; and a substrate inverting device for inverting the substrate; and the substrate processing system is provided with: back surface processing An overlapping processing range in which the processing range of the device overlaps with the processing range of the back peripheral processing device; and after the removal processing is performed by the back processing device, the substrate is turned over by the substrate inverting device, and then processed by the back peripheral portion The device performs a removal process or after performing the removal process using the back peripheral portion processing device The reversing device substrate using flip the substrate, and the backside treatment apparatus using removal process.
又，本發明提供一種記憶有基板處理程式之電腦可讀取記憶媒體，該基板處理程式採用用以去除基板背面之去除對象物的基板處理系統來處理基板背面；該基板處理程式包含有：背面處理步驟，採用背面處理裝置來處理基板背面，該背面處理裝置以基板支撐體支撐住基板外周端緣，於基板背面之內周部到基板支撐體附近的既定之處理範圍，將去除對象物去除，而不去除相較於該既定之處理範圍為外周側的去除對象物；及背面周緣部處理步驟，採用背面周緣部處理裝置來處理基板背面，該背面周緣部處理裝置於基板背面之外周端往內周側的既定之處理範圍，將去除對象物去除，而不去除相較於該既定之處理範圍為內周側的去除對象物；且設置背面處理步驟之處理範圍與背面周緣部處理步驟之處理範圍二者重疊的重疊處理範圍；並且在該背面處理步驟之後，利用基板翻轉裝置使得基板翻轉，然後進行該背面周緣部處理步驟，或者在該背面周緣部處理步驟之後，利用基板翻轉裝置使得基板翻轉，然後進行該背面處理步驟。 [發明之效果]Moreover, the present invention provides a computer readable memory medium having a substrate processing program for processing a substrate back surface by using a substrate processing system for removing an object to be removed from a back surface of the substrate; the substrate processing program includes: a back surface In the processing step, the back surface of the substrate is processed by a back surface processing device that supports the outer peripheral edge of the substrate with the substrate support, and removes the object to be removed from the inner peripheral portion of the back surface of the substrate to a predetermined processing range in the vicinity of the substrate support. And removing the object to be removed on the outer peripheral side from the predetermined processing range; and the step of treating the outer peripheral portion of the back surface, the back surface of the substrate is processed by the back peripheral portion processing device on the outer peripheral end of the back surface of the substrate The object to be removed is removed to a predetermined processing range on the inner circumference side without removing the object to be removed on the inner circumference side from the predetermined processing range; and the processing range of the back surface processing step and the back peripheral portion processing step are set Overlapping processing range in which both processing ranges overlap; and in the back processing step After using such a substrate reversing device reversing the substrate, then the peripheral edge portion of the rear surface processing step, or after the peripheral edge portion of the rear surface processing step, such that the substrate by the substrate reversing means reversing, and then the rear surface processing step. [Effects of the Invention]
本發明可良好地從基板之背面端緣部將去除對象物去除，能夠將因為去除對象物之殘留而對基板之表面處理造成的不良影響加以抑制。According to the present invention, the object to be removed can be removed from the edge of the back surface of the substrate, and the adverse effect on the surface treatment of the substrate can be suppressed by the residue of the removed object.
[實施發明之最佳形態][Best Mode for Carrying Out the Invention]
以下，一面參照圖式，一面針對依本發明之基板處理系統、基板處理方法及基板處理程式的具體結構進行說明。Hereinafter, the specific structure of the substrate processing system, the substrate processing method, and the substrate processing program according to the present invention will be described with reference to the drawings.
如圖1所示，基板處理系統1中，在框體2之前端部形成有基板送入送出台3，並在基板送入送出台3之後部形成有基板處理室4。As shown in FIG. 1, in the substrate processing system 1, a substrate feeding/unloading stage 3 is formed at an end portion of the front side of the casing 2, and a substrate processing chamber 4 is formed behind the substrate feeding/feeding stage 3.
基板送入送出台3係於上部以左右並排方式載置有複數個(在此為3個)載具6，該載具6集中容納有複數片(例如25片)基板5(在此為半導體晶圓)。The substrate feeding/unloading table 3 is mounted on the upper portion side by side, and a plurality of (here, three) carriers 6 are mounted side by side. The carrier 6 collectively houses a plurality of (for example, 25) substrates 5 (here, semiconductors). Wafer).
而且，基板送入送出台3設計成在載具6與後部的基板處理室4之間進行基板5的送入及送出。Further, the substrate feeding/unloading table 3 is designed to feed and eject the substrate 5 between the carrier 6 and the substrate processing chamber 4 at the rear.
基板處理室4中，在中央部配置有基板搬運裝置7，於基板搬運裝置7之一側部以前後並排方式配置有基板翻轉裝置8與表面處理裝置9，並於基板搬運裝置7之另一側部以前後並排方式配置有背面處理裝置10與背面周緣部處理裝置11。在此，基板翻轉裝置8係使得基板5之表背面翻轉的裝置。表面處理裝置9係用以從基板5之表面，將基板5之表面所附著的污染物質、或基板5之表面所形成的凸部等之去除對象物加以去除，其具體結構如後述。背面處理裝置10係用以對於以基板支撐部支撐住外周端緣的基板5，將該基板5背面之內周部到基板支撐部附近的範圍之去除對象物加以去除，其具體結構如後述。又，背面周緣部處理裝置11係用以將基板5之外周端往內周側的範圍之去除對象物加以去除，其具體結構如後述。In the substrate processing chamber 4, the substrate transfer device 7 is disposed at the center portion, and the substrate inverting device 8 and the surface treatment device 9 are arranged side by side in the side portion of the substrate transfer device 7, and the other is the substrate transfer device 7. The back surface processing device 10 and the back surface peripheral portion processing device 11 are disposed side by side in the side portion. Here, the substrate inverting device 8 is a device that flips the front and back surfaces of the substrate 5. The surface treatment apparatus 9 is for removing the object to be removed such as a contaminant adhered to the surface of the substrate 5 or a convex portion formed on the surface of the substrate 5 from the surface of the substrate 5, and the specific structure thereof will be described later. The back surface processing apparatus 10 is for removing the object to be removed in the range from the inner peripheral portion of the back surface of the substrate 5 to the vicinity of the substrate supporting portion with respect to the substrate 5 that supports the outer peripheral edge of the substrate supporting portion, and the specific structure thereof will be described later. Further, the back peripheral portion processing device 11 is for removing the object to be removed in the range from the outer peripheral end of the substrate 5 to the inner peripheral side, and the specific configuration thereof will be described later.
另外，基板處理室4以基板搬運裝置7從基板送入送出台3之既定的載具6承接1片基板5，以基板搬運裝置7在表面處理裝置9、背面處理裝置10、背面周緣部處理裝置11與基板翻轉裝置8之間輸送基板5。基板5係於各裝置9～11接受處理，並採用基板搬運裝置7加以傳遞至基板送入送出台3之既定的載具6。In addition, the substrate processing chamber 4 receives one substrate 5 from a predetermined carrier 6 that is fed from the substrate to the delivery table 3 by the substrate transfer device 7, and the substrate processing device 7 processes the surface treatment device 9, the back surface processing device 10, and the peripheral edge portion of the substrate. The substrate 5 is transported between the device 11 and the substrate inverting device 8. The substrate 5 is processed by each of the devices 9 to 11, and is transferred to a predetermined carrier 6 of the substrate feeding/unloading table 3 by the substrate transfer device 7.
該基板處理系統1連接有控制裝置12(電腦)，並按照可採用控制裝置12讀取之記憶媒體13所記憶的基板處理程式來處理基板5。又，記憶媒體13只要是能記憶住基板處理程式等之各種程式的媒體即可，可為ROM(唯讀記憶體)或RAM(隨機存取記憶體)等之半導體記憶體型的記憶媒體，也可為硬式磁碟片或CD-ROM(唯讀光碟)等之碟片型的記憶媒體。The substrate processing system 1 is connected to a control device 12 (computer), and processes the substrate 5 in accordance with a substrate processing program stored in the memory medium 13 that can be read by the control device 12. Further, the memory medium 13 may be a medium that can store various programs such as a substrate processing program, and may be a semiconductor memory type memory medium such as a ROM (read only memory) or a RAM (random access memory). It can be a disc-type memory medium such as a hard disk or a CD-ROM (CD-ROM only).
又，依本發明之基板處理系統並不限於：如上述結構般使基板翻轉裝置8、表面處理裝置9、背面處理裝置10與背面周緣部處理裝置11一體構成的系統，也可為使各裝置8～11分別各自獨立所構成的系統。又，基板處理系統係從基板5之背面將去除對象物去除者，且如後述般，不限於藉由使用清洗液之清洗處理來將去除對象物去除的情形，也可藉由使用拋光材料之拋光處理來將去除對象物去除。Further, the substrate processing system according to the present invention is not limited to the system in which the substrate inverting device 8, the surface treatment device 9, the back surface processing device 10, and the back surface peripheral processing device 11 are integrally formed as in the above configuration, and the respective devices may be used. 8 to 11 are separate systems. Further, the substrate processing system removes the object removed from the back surface of the substrate 5, and as described later, the removal target is not limited to the cleaning process by using the cleaning liquid, and the polishing material may be used. A polishing process is performed to remove the removed object.
該基板處理系統1中，表面處理裝置9如圖2所示般，在殼體14之內部容納有基板固持機構15及基板處理機構16。In the substrate processing system 1, as shown in FIG. 2, the surface treatment apparatus 9 houses the substrate holding mechanism 15 and the substrate processing mechanism 16 inside the casing 14.
基板固持機構15為如下之機構：於使基板5之表面(主面：電路形成面)朝上側的狀態下，以吸附住基板5背面之中央部(內周部)的方式將基板5固持成水平，並使得所固持的基板5旋轉。該基板固持機構15係於旋轉軸17之上端部安裝有圓板狀的吸附台18。旋轉軸17連接有基板旋轉驅動機構20，吸附台18連接有抽吸機構21。基板旋轉驅動機構20及抽吸機構21連接於控制裝置12，以控制裝置12分別加以控制。又，在吸附台18之外周外方設有用以防止處理液等之飛散的杯體22。基板固持機構15不限於以吸附住基板5背面之方式來固持基板5的構造，也可設計成以基板支撐體支撐住基板5之外周端緣來固持基板5的構造。The substrate holding mechanism 15 is a mechanism for holding the substrate 5 so as to adsorb the central portion (inner peripheral portion) of the back surface of the substrate 5 while the surface (main surface: circuit forming surface) of the substrate 5 is facing upward. Horizontal, and the substrate 5 held by the rotation is rotated. The substrate holding mechanism 15 is attached to a disk-shaped adsorption stage 18 at an upper end portion of the rotating shaft 17. The substrate rotation driving mechanism 20 is connected to the rotating shaft 17, and the suction mechanism 18 is connected to the suction table 18. The substrate rotation driving mechanism 20 and the suction mechanism 21 are connected to the control device 12, and are controlled by the control device 12, respectively. Further, a cup 22 for preventing scattering of the treatment liquid or the like is provided outside the outer periphery of the adsorption stage 18. The substrate holding mechanism 15 is not limited to the structure in which the substrate 5 is held so as to adsorb the back surface of the substrate 5, and may be designed such that the substrate support supports the outer peripheral edge of the substrate 5 to hold the substrate 5.
基板處理機構16為如下之機構：對基板5之表面供給清洗液，以清洗液將基板5之表面進行清洗處理，藉以從基板5之表面將去除對象物去除。該基板處理機構16係於支撐軸23之上端部安裝有臂部24之基端部，於臂部24之前端部安裝有噴嘴25。又，基板處理機構16中，用來供給清洗液的清洗液供給源26經由流量調整器27而連接於噴嘴25。支撐軸23連接有臂部旋轉驅動機構28。流量調整器27及臂部旋轉驅動機構28連接於控制裝置12，以控制裝置12分別加以控制。The substrate processing mechanism 16 is a mechanism that supplies a cleaning liquid to the surface of the substrate 5, and cleans the surface of the substrate 5 with a cleaning liquid, thereby removing the removed object from the surface of the substrate 5. The substrate processing mechanism 16 has a base end portion of the arm portion 24 attached to the upper end portion of the support shaft 23, and a nozzle 25 is attached to the end portion of the arm portion 24. Further, in the substrate processing mechanism 16, the cleaning liquid supply source 26 for supplying the cleaning liquid is connected to the nozzle 25 via the flow rate adjuster 27. An arm rotation drive mechanism 28 is coupled to the support shaft 23. The flow rate adjuster 27 and the arm rotation drive mechanism 28 are connected to the control device 12, and are controlled by the control device 12, respectively.
而且，表面處理裝置9如圖3所示般，以基板固持機構15使基板5一面固持成水平，一面進行旋轉，並以基板處理機構16對基板5之表面供給清洗液，使噴嘴25從基板5之表面的中央部往外周端移動。藉此，表面處理裝置9將基板5之表面整體進行清洗處理，而從基板5之表面將去除對象物去除。Further, as shown in FIG. 3, the surface treatment apparatus 9 rotates while holding the substrate 5 horizontally by the substrate holding mechanism 15, and supplies the cleaning liquid to the surface of the substrate 5 by the substrate processing mechanism 16, and the nozzle 25 is driven from the substrate. The central portion of the surface of 5 moves toward the outer peripheral end. Thereby, the surface treatment apparatus 9 cleans the entire surface of the substrate 5, and removes the removed object from the surface of the substrate 5.
又，基板處理系統1中，背面處理裝置10如圖4所示般，在殼體29之內部容納有基板固持機構30及基板處理機構31。Further, in the substrate processing system 1, as shown in FIG. 4, the back surface processing apparatus 10 houses the substrate holding mechanism 30 and the substrate processing mechanism 31 inside the casing 29.
基板固持機構30為如下之機構：於使基板5之背面朝上側的狀態下，以夾持住基板5之外周端緣的方式將基板5固持成水平，並使得所固持的基板5旋轉。背面處理裝置10中，由於要在使得基板5之表面(主面)朝下側的狀態下固持住基板，因此無法以吸附住中央部的方式來固持基板5，而以夾持住外周端緣的方式來固持基板5。該基板固持機構30係於旋轉軸32之上端部安裝有圓板狀的平台33，並於平台33之外周部，以在圓周方向上空出間隔的方式安裝有3個基板支撐體34。基板支撐體34可在從基板搬運裝置7承接住基板5的承接位置、與夾持住基板5外周端緣的固持位置之間進行移動，並於固持位置覆蓋住基板5之外周端上方(參照圖6)。旋轉軸32連接有基板旋轉驅動機構35，基板支撐體34連接有移動機構36。基板旋轉驅動機構35及移動機構36連接於控制裝置12，以控制裝置12分別加以控制。又，在平台33之外周外方設有用以防止處理液等之飛散的杯體37。The substrate holding mechanism 30 is a mechanism for holding the substrate 5 horizontally and holding the substrate 5 held by the substrate 5 so as to sandwich the outer peripheral edge of the substrate 5 with the back surface of the substrate 5 facing upward. In the back surface processing apparatus 10, since the substrate is held in a state in which the surface (main surface) of the substrate 5 is placed on the lower side, the substrate 5 cannot be held by the center portion, and the outer peripheral edge is held. The way to hold the substrate 5 is. In the substrate holding mechanism 30, a disk-shaped platform 33 is attached to an upper end portion of the rotating shaft 32, and three substrate supporting bodies 34 are attached to the outer peripheral portion of the stage 33 so as to be spaced apart in the circumferential direction. The substrate support 34 is movable between a receiving position at which the substrate 5 is received by the substrate transfer device 7 and a holding position sandwiching the outer peripheral edge of the substrate 5, and covers the outer peripheral end of the substrate 5 at the holding position (refer to Figure 6). A substrate rotation driving mechanism 35 is connected to the rotating shaft 32, and a moving mechanism 36 is connected to the substrate supporting body 34. The substrate rotation driving mechanism 35 and the moving mechanism 36 are connected to the control device 12, and are controlled by the control device 12, respectively. Further, a cup body 37 for preventing scattering of the treatment liquid or the like is provided outside the platform 33.
該基板固持機構30中，在旋轉軸32及平台33之中央部形成有噴吐流路38。該噴吐流路38係經由流量調整器40而連接有用以供給惰性氣體(例如氮氣)的惰性氣體供給源39。流量調整器40連接於控制裝置12，以控制裝置12加以控制。In the substrate holding mechanism 30, a discharge flow path 38 is formed in a central portion of the rotating shaft 32 and the stage 33. The discharge flow path 38 is connected to an inert gas supply source 39 for supplying an inert gas (for example, nitrogen gas) via the flow rate adjuster 40. The flow regulator 40 is coupled to the control unit 12 for control by the control unit 12.
基板處理機構31為如下之機構：一面對基板5之背面供給清洗液，一面以刷子將基板5之背面進行清洗處理，藉以從基板5之背面將去除對象物去除。該基板處理機構31係於支撐軸41之上端部安裝有臂部42之基端部，於臂部42之前端部安裝有刷頭43，於刷頭43安裝有清洗刷44。支撐軸41連接有臂部升降‧旋轉驅動機構48，刷頭43連接有刷子旋轉驅動機構49。又，於基板處理機構31中，以朝向基板5(平台33)之中央部的方式配置有噴嘴45，且經由流量調整器47而連接有用以對噴嘴45供給清洗液的清洗液供給源46。流量調整器47、臂部升降‧旋轉驅動機構48及刷子旋轉驅動機構49連接於控制裝置12，以控制裝置12分別加以控制。The substrate processing mechanism 31 is a mechanism that cleans the back surface of the substrate 5 with a brush while supplying the cleaning liquid to the back surface of the substrate 5, thereby removing the removed object from the back surface of the substrate 5. In the substrate processing mechanism 31, a base end portion of the arm portion 42 is attached to an upper end portion of the support shaft 41, a brush head 43 is attached to a front end portion of the arm portion 42, and a cleaning brush 44 is attached to the brush head 43. An arm raising/lowering rotational driving mechanism 48 is connected to the support shaft 41, and a brush rotating drive mechanism 49 is connected to the brush head 43. Further, in the substrate processing mechanism 31, the nozzle 45 is disposed so as to face the central portion of the substrate 5 (platform 33), and the cleaning liquid supply source 46 for supplying the cleaning liquid to the nozzle 45 is connected via the flow rate adjuster 47. The flow rate adjuster 47, the arm lifter ‧ the rotary drive mechanism 48 and the brush rotation drive mechanism 49 are connected to the control device 12, and are controlled by the control device 12, respectively.
另外，背面處理裝置10如圖5所示般，利用基板固持機構30，使基板5一面於其背面朝上側的狀態下固持成水平，一面進行旋轉；且利用基板處理機構31，對基板5之背面供給清洗液，並使清洗刷44一面進行旋轉，一面從基板5之背面的內周部(在此為中央部)移動至：基板支撐體34之附近，且清洗刷44不會接觸到基板支撐體34的位置。藉此，背面處理裝置10如圖6(a)所示般，對於基板5背面之內周部到基板支撐體34附近的既定之處理範圍50進行清洗處理，而從基板5之背面將去除對象物去除。In the back surface processing apparatus 10, as shown in FIG. 5, the substrate holding mechanism 30 rotates the substrate 5 while being horizontally held on the back side thereof, and the substrate processing mechanism 31 is used for the substrate 5. The cleaning liquid is supplied to the back surface, and the cleaning brush 44 is moved from the inner peripheral portion (here, the central portion) of the back surface of the substrate 5 to the vicinity of the substrate support 34, and the cleaning brush 44 does not contact the substrate. The position of the support body 34. As a result, as shown in FIG. 6(a), the back surface processing apparatus 10 cleans the predetermined processing range 50 from the inner peripheral portion of the back surface of the substrate 5 to the vicinity of the substrate support 34, and removes the object from the back surface of the substrate 5. Removal of matter.
又，基板處理系統1中，背面周緣部處理裝置11如圖7所示般，在殼體52之內部容納有基板固持機構53及基板處理機構54。Further, in the substrate processing system 1, the back surface peripheral portion processing device 11 houses the substrate holding mechanism 53 and the substrate processing mechanism 54 inside the casing 52 as shown in FIG.
基板固持機構53為如下之機構：於使基板5之表面朝上側的狀態下，以吸附住基板5背面之中央部(內周部)的方式將基板5固持成水平，並使得所固持的基板5旋轉。該基板固持機構53係於旋轉軸55之上端部安裝有圓板狀的吸附台56。背面周緣部處理裝置11中，由於要將基板5之周緣部進行清洗處理，因此無法以夾持住外周端緣的方式來固持基板5，而以吸附住基板5背面之中央部的方式進行固持。旋轉軸55連接有旋轉驅動機構57，吸附台56連接有抽吸機構58。旋轉驅動機構57及抽吸機構58連接於控制裝置12，以控制裝置12分別加以控制。又，在吸附台56之外周外方設有用以防止處理液等之飛散的杯體59。The substrate holding mechanism 53 is a mechanism for holding the substrate 5 horizontally and holding the substrate held so that the central portion (inner peripheral portion) of the back surface of the substrate 5 is adsorbed while the surface of the substrate 5 is facing upward. 5 rotation. The substrate holding mechanism 53 is attached to a disk-shaped suction stage 56 at an end portion of the rotating shaft 55. In the back peripheral edge portion processing apparatus 11, since the peripheral edge portion of the substrate 5 is subjected to the cleaning process, the substrate 5 cannot be held by sandwiching the outer peripheral edge, and the substrate 5 is held by the center portion of the back surface of the substrate 5 . A rotary drive mechanism 57 is coupled to the rotary shaft 55, and a suction mechanism 58 is coupled to the suction stage 56. The rotary drive mechanism 57 and the suction mechanism 58 are connected to the control device 12, and are controlled by the control device 12, respectively. Further, a cup 59 for preventing scattering of the treatment liquid or the like is provided outside the outer periphery of the adsorption stage 56.
基板處理機構54為如下之機構：一面對基板5之外周端緣及基板5之背面外周端供給清洗液，一面以刷子將基板5之外周端緣與基板5之背面周緣部同時進行清洗處理，藉以從基板5之外周端緣及背面周緣部將去除對象物去除。所謂基板5之背面周緣部，係指基板5之外周端往內周側的既定之處理範圍。該基板處理機構54係於支撐軸60之上端部安裝有臂部61之基端部，於臂部61之前端部安裝有刷頭62，於刷頭62安裝有清洗刷63。又，於基板處理機構54中，以朝向基板5之外周端的方式配置有噴嘴64，且經由流量調整器66而連接有用以對噴嘴64供給清洗液的清洗液供給源65。支撐軸60連接有旋轉驅動機構67，刷頭62連接有旋轉驅動機構68。流量調整器66及旋轉驅動機構67、68連接於控制裝置12，以控制裝置12分別加以控制。在此，清洗刷63由下述部分構成：小直徑刷子部69，抵接於基板5之外周端緣以進行清洗處理；以及大直徑刷子部70，連設於小直徑刷子部69之下方，且較小直徑刷子部69為大直徑者，而抵接於基板5之背面外周端，以將周緣部進行清洗處理。藉由使小直徑刷子部69抵接於基板5之外周端緣，並且使大直徑刷子部70抵接於基板5之背面外周端，可將基板5之外周端緣與背面周緣部同時進行清洗處理。又，清洗刷63也可設計成：省略小直徑刷子部69，而僅以大直徑刷子部70構成，並使得大直徑刷子部70接觸於基板5之外周端緣後，再使其從外周端往內周方向移動，以將背面周緣部進行處理。The substrate processing mechanism 54 is a mechanism for simultaneously supplying cleaning liquid to the outer peripheral edge of the substrate 5 and the outer peripheral end of the substrate 5, and simultaneously cleaning the outer peripheral edge of the substrate 5 and the peripheral edge of the substrate 5 with a brush. The object to be removed is removed from the outer peripheral edge and the peripheral edge of the back surface of the substrate 5. The peripheral edge portion of the back surface of the substrate 5 refers to a predetermined processing range from the outer peripheral end of the substrate 5 to the inner peripheral side. The substrate processing mechanism 54 has a base end portion of the arm portion 61 attached to the upper end portion of the support shaft 60, a brush head 62 attached to the front end portion of the arm portion 61, and a cleaning brush 63 attached to the brush head 62. Further, in the substrate processing mechanism 54, the nozzle 64 is disposed so as to face the outer peripheral end of the substrate 5, and the cleaning liquid supply source 65 for supplying the cleaning liquid to the nozzle 64 is connected via the flow rate adjuster 66. A rotation drive mechanism 67 is coupled to the support shaft 60, and a rotation drive mechanism 68 is coupled to the brush head 62. The flow regulator 66 and the rotary drive mechanisms 67, 68 are connected to the control device 12 and are controlled by the control device 12, respectively. Here, the cleaning brush 63 is composed of a small-diameter brush portion 69 that abuts against the outer peripheral edge of the substrate 5 to perform a cleaning process, and a large-diameter brush portion 70 that is connected below the small-diameter brush portion 69. Further, the smaller diameter brush portion 69 is a large diameter, and abuts against the outer peripheral end of the back surface of the substrate 5 to clean the peripheral portion. By abutting the small-diameter brush portion 69 against the outer peripheral edge of the substrate 5 and abutting the large-diameter brush portion 70 against the outer peripheral end of the substrate 5, the outer peripheral edge and the peripheral peripheral portion of the substrate 5 can be simultaneously cleaned. deal with. Further, the cleaning brush 63 may be designed such that the small-diameter brush portion 69 is omitted, and only the large-diameter brush portion 70 is formed, and the large-diameter brush portion 70 is brought into contact with the outer peripheral edge of the substrate 5, and then from the outer peripheral end. Move in the inner circumferential direction to treat the peripheral edge portion of the back surface.
另外，背面周緣部處理裝置11如圖8所示般，利用基板固持機構53，使基板5一面於其背面朝下側的狀態下固持成水平，一面進行旋轉；且利用基板處理機構54，對基板5之背面外周端供給清洗液，並使清洗刷63一面進行旋轉，一面往基板5之外周端緣移動。藉此，背面周緣部處理裝置11如圖6(b)所示般，對於基板5之外周端緣以及背面周緣部亦即從外周端往內周側的既定之處理範圍71進行清洗處理，而從基板5之外周端緣及背面周緣部將去除對象物去除。In addition, as shown in FIG. 8, the back surface peripheral processing apparatus 11 rotates the substrate 5 while being horizontally held by the substrate holding mechanism 53, and the substrate processing mechanism 54 is used. The cleaning liquid is supplied to the outer peripheral end of the back surface of the substrate 5, and the cleaning brush 63 is moved while moving toward the outer peripheral edge of the substrate 5. As a result, as shown in FIG. 6( b ), the back surface peripheral portion processing apparatus 11 performs cleaning processing on the outer peripheral edge and the rear peripheral edge portion of the substrate 5 , that is, from the outer peripheral end to the inner peripheral side. The object to be removed is removed from the outer peripheral edge and the peripheral edge of the back surface of the substrate 5.
基板處理系統1如圖6(c)所示般，在以背面處理裝置10進行處理之基板5背面的處理範圍50、與以背面周緣部處理裝置11進行處理之基板5背面的處理範圍71之間設定有：以背面處理裝置10與背面周緣部處理裝置11兩者進行處理之大致環狀的重疊處理範圍72。基板處理系統1以背面處理裝置10與背面周緣部處理裝置11二者前後重複地對該重疊處理範圍72進行處理，藉以良好地從基板5之背面將去除對象物去除，來將因為去除對象物之殘留而對基板5之表面處理造成的不良影響加以抑制。As shown in FIG. 6(c), the substrate processing system 1 has a processing range 50 on the back surface of the substrate 5 processed by the back surface processing apparatus 10 and a processing range 71 on the back surface of the substrate 5 processed by the back surface peripheral processing apparatus 11. The substantially annular overlapping processing range 72 that is processed by both the back surface processing apparatus 10 and the back surface peripheral processing apparatus 11 is set. In the substrate processing system 1, the overlap processing range 72 is processed repeatedly by the back surface processing apparatus 10 and the back surface peripheral processing apparatus 11, and the object to be removed is removed from the back surface of the substrate 5, and the object to be removed is removed. The residual effect is suppressed by the surface treatment of the substrate 5.
該重疊處理範圍72設定得越廣，越能良好地將去除對象物去除，但是處理時間會隨之相應地變長，而導致處理量的降低。另一方面，形成重疊處理範圍72的距離，亦即背面處理裝置10之處理範圍50外周、背面周緣部處理裝置11之處理範圍71內周二者間的距離越是較基板固持機構30、53的偏心量為長，越能將基板固持機構30、53在構造上的偏心量吸收，而良好地對基板5之背面進行處理。尤其，在以小直徑刷子部69與大直徑刷子部70來構成清洗刷63的情形，可依下述方式形成重疊處理範圍72：使得大直徑刷子部70在半徑方向上從小直徑刷子部69所延伸出來的延伸量較長於背面處理裝置10在基板固持機構30偏心時之基板外周端到處理範圍50外周的距離中之最長距離。The wider the overlap processing range 72 is set, the more the object to be removed can be removed, but the processing time becomes correspondingly longer, resulting in a decrease in the amount of processing. On the other hand, the distance between the overlapping processing range 72, that is, the outer circumference of the processing range 50 of the back surface processing apparatus 10 and the inner circumference of the processing range 71 of the back surface peripheral processing apparatus 11 is higher than that of the substrate holding mechanisms 30, 53. When the amount of eccentricity is long, the eccentric amount of the substrate holding mechanisms 30 and 53 can be absorbed, and the back surface of the substrate 5 can be satisfactorily processed. In particular, in the case where the cleaning brush 63 is constituted by the small-diameter brush portion 69 and the large-diameter brush portion 70, the overlapping processing range 72 can be formed in such a manner that the large-diameter brush portion 70 is radially from the small-diameter brush portion 69. The extended amount of extension is longer than the longest distance from the outer peripheral end of the substrate when the substrate holding mechanism 10 is eccentric to the outer circumference of the processing range 50.
基板處理系統1係構成為如以上所說明，並按照記憶媒體13所記憶的基板處理程式，而如以下所說明般進行基板5的處理。The substrate processing system 1 is configured to perform the processing of the substrate 5 as described below in accordance with the substrate processing program stored in the memory medium 13 as described above.
首先，如圖9(a)所示，以基板處理程式執行基板翻轉步驟。該基板翻轉步驟中，利用基板翻轉裝置8使得基板5之表背面翻轉，以形成使基板5之背面朝上側的狀態。First, as shown in FIG. 9(a), the substrate inversion step is performed in the substrate processing program. In the substrate inverting step, the front and back surfaces of the substrate 5 are inverted by the substrate inverting device 8 to form a state in which the back surface of the substrate 5 faces upward.
接著，如圖9(a)所示，以基板處理程式執行背面處理步驟。基板處理系統1如圖5所示般，以控制裝置12對基板固持機構30之移動機構36進行控制，以使基板支撐體34成為開啟的狀態；在將基板搬運裝置7從基板翻轉裝置8所搬運來的1片基板5加以承接後，對移動機構36進行控制，以使基板支撐體34成為閉合的狀態，藉此利用基板支撐體34固持住基板5之外周端緣。Next, as shown in FIG. 9(a), the back surface processing step is executed in the substrate processing program. As shown in FIG. 5, the substrate processing system 1 controls the moving mechanism 36 of the substrate holding mechanism 30 with the control device 12 so that the substrate supporting body 34 is opened; and the substrate carrying device 7 is rotated from the substrate turning device 8. After the conveyed one substrate 5 is received, the moving mechanism 36 is controlled so that the substrate support 34 is closed, whereby the outer peripheral edge of the substrate 5 is held by the substrate support 34.
其後，基板處理系統1以控制裝置12對基板固持機構30之基板旋轉驅動機構35進行控制，以使旋轉軸32旋轉，而使基板5旋轉。又，以控制裝置12對基板處理機構31之流量調整器47進行控制，而從清洗液供給源46經由噴嘴45朝向基板5之背面中央部噴吐出清洗液。進而，以控制裝置12對基板處理機構31之臂部升降‧旋轉驅動機構48及刷子旋轉驅動機構49進行控制，而使清洗刷44一面進行旋轉，一面在基板5的背面中央部與基板支撐體34附近之間以沿基板5背面的方式移動。藉此，於基板5背面之內周部(中央部)到基板支撐部34附近的既定之處理範圍50，將去除對象物去除。此時，以控制裝置12對於流量調整器40進行控制，而從惰性氣體供給源39經由噴吐流路38朝向基板5之表面(底面：圖案形成面)噴吐出惰性氣體。藉此，用以防止：於基板5之背面(頂面)所去除的去除對象物迴流至基板5之表面(底面)而附著。Thereafter, the substrate processing system 1 controls the substrate rotation driving mechanism 35 of the substrate holding mechanism 30 by the control device 12 to rotate the rotating shaft 32 to rotate the substrate 5. Moreover, the flow rate adjuster 47 of the substrate processing mechanism 31 is controlled by the control device 12, and the cleaning liquid is ejected from the cleaning liquid supply source 46 toward the center portion of the back surface of the substrate 5 via the nozzle 45. Further, the control device 12 controls the arm lift/elevation drive mechanism 48 and the brush rotation drive mechanism 49 of the substrate processing mechanism 31 to rotate the cleaning brush 44 while the center of the back surface of the substrate 5 and the substrate support are rotated. The vicinity of 34 moves along the back side of the substrate 5. Thereby, the object to be removed is removed from the inner peripheral portion (center portion) of the back surface of the substrate 5 to a predetermined processing range 50 in the vicinity of the substrate supporting portion 34. At this time, the flow rate adjuster 40 is controlled by the control device 12, and the inert gas is ejected from the inert gas supply source 39 to the surface (bottom surface: pattern forming surface) of the substrate 5 via the ejection flow path 38. Thereby, it is prevented that the object to be removed which is removed on the back surface (top surface) of the substrate 5 is reflowed to the surface (bottom surface) of the substrate 5 and adhered.
其後，基板處理系統1以控制裝置12對於流量調整器40、47進行控制，而使清洗液及惰性氣體的噴吐停止，並依所需，進行基板5的潤洗處理或乾燥處理。然後，以控制裝置12對基板固持機構30之基板旋轉驅動機構35進行控制，而使基板5的旋轉停止。然後，以控制裝置12對基板固持機構30之移動機構36進行控制，而使基板支撐體34成為開啟的狀態，並將基板5傳遞往基板搬運裝置7。Thereafter, the substrate processing system 1 controls the flow rate adjusters 40 and 47 by the control device 12, stops the ejection of the cleaning liquid and the inert gas, and performs the rinsing treatment or the drying treatment of the substrate 5 as needed. Then, the substrate rotation driving mechanism 35 of the substrate holding mechanism 30 is controlled by the control device 12 to stop the rotation of the substrate 5. Then, the control device 12 controls the moving mechanism 36 of the substrate holding mechanism 30 to open the substrate support 34, and transfers the substrate 5 to the substrate transfer device 7.
接著，如圖9(a)所示，以基板處理程式執行基板翻轉步驟。該基板翻轉步驟中，已從基板搬運裝置7承接到基板5的基板翻轉裝置8使得基板5之表背面翻轉，以形成使基板5之表面朝上側的狀態。Next, as shown in FIG. 9(a), the substrate inversion step is performed in the substrate processing program. In the substrate inverting step, the substrate inverting device 8 that has been received from the substrate transfer device 7 to the substrate 5 reverses the front and back surfaces of the substrate 5 to form a state in which the surface of the substrate 5 faces upward.
接下來，如圖9(a)所示，以基板處理程式執行背面周緣部處理步驟。基板處理系統1如圖8所示般，在將基板搬運裝置7從基板翻轉裝置8所搬運來的1片基板5加以承接後，以控制裝置12對基板固持機構53之抽吸機構58進行控制，而以吸附台56抽吸住基板5之背面中央部，將基板5固持於吸附台56的上部。Next, as shown in FIG. 9(a), the back peripheral portion processing step is executed in the substrate processing program. As shown in FIG. 8, the substrate processing system 1 receives the substrate 5 conveyed by the substrate transfer device 7 from the substrate inverting device 8, and then controls the suction mechanism 58 of the substrate holding mechanism 53 by the control device 12. On the other hand, the center portion of the back surface of the substrate 5 is sucked by the suction stage 56, and the substrate 5 is held by the upper portion of the adsorption stage 56.
其後，基板處理系統1以控制裝置12對基板固持機構53之旋轉驅動機構57進行控制，以使旋轉軸55旋轉，而使基板5旋轉。又，以控制裝置12對基板處理機構54之流量調整器66進行控制，而從清洗液供給源65經由噴嘴64朝向基板5之背面外周端噴吐出清洗液。進而，以控制裝置12對基板處理機構54之旋轉驅動機構67、68進行控制，使清洗刷63一面進行旋轉，一面抵接於基板5之外周端緣，而以清洗刷63之小直徑刷子部69將基板5之外周端緣進行清洗，同時以清洗刷63之大直徑刷子部70，將基板5之背面周緣部亦即從外周端往內周側的既定之處理範圍71加以清洗。藉此，於基板5之外周端緣、及基板5之周緣部亦即從外周端往內周側的既定之處理範圍71，將去除對象物去除。Thereafter, the substrate processing system 1 controls the rotation driving mechanism 57 of the substrate holding mechanism 53 by the control device 12 to rotate the rotating shaft 55 to rotate the substrate 5. Moreover, the flow rate adjuster 66 of the substrate processing mechanism 54 is controlled by the control device 12, and the cleaning liquid is ejected from the cleaning liquid supply source 65 toward the outer peripheral end of the back surface of the substrate 5 via the nozzle 64. Further, the control device 12 controls the rotation drive mechanisms 67 and 68 of the substrate processing mechanism 54 to rotate the cleaning brush 63 while abutting against the outer peripheral edge of the substrate 5, and the small diameter brush portion of the cleaning brush 63. In the outer peripheral edge of the substrate 5, the outer peripheral edge of the substrate 5 is cleaned, and the peripheral portion of the back surface of the substrate 5, that is, the predetermined processing range 71 from the outer peripheral end to the inner peripheral side is cleaned by the large-diameter brush portion 70 of the cleaning brush 63. Thereby, the object to be removed is removed at the outer peripheral edge of the substrate 5 and the peripheral edge portion of the substrate 5, that is, the predetermined processing range 71 from the outer peripheral end to the inner peripheral side.
其後，基板處理系統1以控制裝置12對於流量調整器66進行控制，而使清洗液的噴吐停止，並依所需，進行基板5的潤洗處理或乾燥處理。然後，以控制裝置12對基板固持機構53之旋轉驅動機構57進行控制，而使基板5的旋轉停止。然後，以控制裝置12對基板固持機構53之抽吸機構58進行控制，而使基板5的抽吸停止，並將基板5傳遞往基板搬運裝置7。Thereafter, the substrate processing system 1 controls the flow rate adjuster 66 by the control device 12, stops the ejection of the cleaning liquid, and performs the rinsing treatment or the drying processing of the substrate 5 as needed. Then, the rotation driving mechanism 57 of the substrate holding mechanism 53 is controlled by the control device 12 to stop the rotation of the substrate 5. Then, the suction device 58 of the substrate holding mechanism 53 is controlled by the control device 12 to stop the suction of the substrate 5, and the substrate 5 is transferred to the substrate transfer device 7.
接著，如圖9(a)所示，以基板處理程式執行表面處理步驟。基板處理系統1如圖3所示般，在從基板搬運裝置7承接住1片基板5後，以控制裝置12對基板固持機構15之抽吸機構21進行控制，而以吸附台18抽吸住基板5之背面中央部，將基板5固持於吸附台18的上部。Next, as shown in FIG. 9(a), the surface treatment step is performed in the substrate processing program. As shown in FIG. 3, the substrate processing system 1 controls the suction mechanism 21 of the substrate holding mechanism 15 by the control device 12 after receiving one substrate 5 from the substrate transfer device 7, and sucks it by the adsorption table 18. At the central portion of the back surface of the substrate 5, the substrate 5 is held by the upper portion of the adsorption stage 18.
其後，基板處理系統1以控制裝置12對基板固持機15之基板旋轉驅動機構20進行控制，以使旋轉軸17旋轉，而使基板5旋轉。又，以控制裝置12對基板處理機構16之流量調整器27進行控制，而從清洗液供給源26經由噴嘴25朝向基板5之表面中央部噴吐出清洗液。進而，以控制裝置12對基板處理機構16之臂部旋轉驅動機構28進行控制，而使噴嘴25在基板5的表面中央部與外周端之間移動，藉以從基板5之表面將去除對象物去除。Thereafter, the substrate processing system 1 controls the substrate rotation driving mechanism 20 of the substrate holding machine 15 by the control device 12 to rotate the rotating shaft 17 to rotate the substrate 5. Moreover, the flow rate adjuster 27 of the substrate processing mechanism 16 is controlled by the control device 12, and the cleaning liquid is ejected from the cleaning liquid supply source 26 toward the central portion of the surface of the substrate 5 via the nozzle 25. Further, the control unit 12 controls the arm rotation driving mechanism 28 of the substrate processing mechanism 16 to move the nozzle 25 between the central portion and the outer peripheral end of the substrate 5, thereby removing the removed object from the surface of the substrate 5. .
其後，基板處理系統1以控制裝置12對於流量調整器27進行控制，而使清洗液的噴吐停止，並依所需，進行基板5的潤洗處理或乾燥處理。然後，以控制裝置12對基板固持機構15之基板旋轉驅動機構20進行控制，而使基板5的旋轉停止。然後，以控制裝置12對基板固持機構15之抽吸機構21進行控制，而使基板5的抽吸停止，並將基板5傳遞往基板搬運裝置7。Thereafter, the substrate processing system 1 controls the flow rate adjuster 27 by the control device 12, stops the ejection of the cleaning liquid, and performs the rinsing treatment or the drying processing of the substrate 5 as needed. Then, the substrate rotation driving mechanism 20 of the substrate holding mechanism 15 is controlled by the control device 12 to stop the rotation of the substrate 5. Then, the suction device 21 of the substrate holding mechanism 15 is controlled by the control device 12 to stop the suction of the substrate 5, and the substrate 5 is transferred to the substrate transfer device 7.
以基板處理程式執行的基板處理方法並不限於：如圖9(a)所示，以基板翻轉步驟‧背面處理步驟‧基板翻轉步驟‧背面周緣部處理步驟‧表面處理步驟之順序進行的情形，可將背面處理步驟與背面周緣部處理步驟二者適當組合來進行處理，而亦可如圖9(b)所示，進行背面周緣部處理步驟後，進行表面處理步驟，然後進行基板翻轉步驟，再進行背面處理步驟與基板翻轉步驟。而且，亦可如圖9(c)、9(d)所示，於背面周緣部處理步驟中，以吸附住基板5背面之方式進行固持，而在同處理裝置中，除了基板5之背面周緣部處理外，也進行基板5之表面處理(表面處理步驟)。The substrate processing method performed by the substrate processing program is not limited to the case where the substrate inverting step ‧ the back surface processing step ‧ the substrate inversion step ‧ the back peripheral portion processing step ‧ the surface treatment step is performed as shown in FIG. 9( a ) The back surface processing step and the back surface peripheral portion processing step may be appropriately combined for processing, or as shown in FIG. 9(b), after the back surface peripheral portion processing step is performed, the surface treatment step is performed, and then the substrate inverting step is performed. The backside processing step and the substrate inversion step are performed. Further, as shown in FIGS. 9(c) and 9(d), in the process of treating the back surface portion of the back surface, the substrate 5 is held by the back surface of the substrate 5, and in the same processing device, except for the back surface of the substrate 5. In addition to the partial processing, the surface treatment of the substrate 5 (surface treatment step) is also performed.
如圖9(a)所示，進行背面處理步驟後，進行背面周緣部處理步驟，然後進行表面處理步驟時，由於最後進行表面處理步驟，因此能使基板5之表面形成良好狀態。又，因為相較於基板5之背面周緣部處理或表面處理，先進行基板5之背面處理，故在對基板5之表面進行處理時，不會污染到基板固持機構53、15之吸附台56、18。As shown in Fig. 9(a), after the back surface treatment step, the back surface peripheral portion treatment step is performed, and when the surface treatment step is performed, the surface treatment step is finally performed, so that the surface of the substrate 5 can be formed into a good state. Further, since the back surface treatment of the substrate 5 is performed in comparison with the processing of the peripheral portion of the back surface of the substrate 5 or the surface treatment, the adsorption table 56 of the substrate holding mechanisms 53 and 15 is not contaminated when the surface of the substrate 5 is processed. 18.
又，如圖9(b)所示，進行背面周緣部處理步驟後，進行表面處理步驟，然後進行背面處理步驟時，可於最後的背面處理步驟中，將在背面周緣部處理步驟或表面處理步驟所附著於基板5之背面的污染物質等加以去除，能防止其轉印到基板5之表面。又，即使於背面周緣部處理步驟中，基板5之背面上留下抽吸痕跡，也可於最後的背面處理步驟中，將抽吸痕跡去除。又，由於先進行基板之外周端緣或背面周緣部的處理，因此在進行背面處理步驟時，即使基板支撐體34夾持住基板之外周端緣，也不會污染到基板支撐體34。Further, as shown in FIG. 9(b), after the step of treating the back surface portion of the back surface, the surface treatment step is performed, and then the back surface treatment step is performed, and in the final back surface treatment step, the processing step or surface treatment at the peripheral portion of the back surface portion may be performed. The contaminant or the like adhering to the back surface of the substrate 5 is removed in the step, and the transfer to the surface of the substrate 5 can be prevented. Further, even in the back peripheral portion processing step, a suction mark is left on the back surface of the substrate 5, and the suction trace can be removed in the last back surface processing step. Further, since the outer peripheral edge or the outer peripheral edge portion of the substrate is processed first, even when the substrate support 34 sandwiches the outer peripheral edge of the substrate, the substrate support 34 is not contaminated.
又，如圖9(c)、9(d)所示，於背面周緣部處理步驟同時進行表面處理步驟的情形，可使得基板5之表背面處理所需的時間縮短，而能夠提高處理量。Further, as shown in FIGS. 9(c) and 9(d), in the case where the surface treatment step is simultaneously performed in the process of treating the back surface portion of the back surface, the time required for the front and back surface treatment of the substrate 5 can be shortened, and the amount of processing can be increased.
如以上所說明，基板處理系統1係於背面處理步驟對基板5背面之內周部到基板支撐體34附近的既定之處理範圍50進行處理，而從基板5之背面將去除對象物去除，並於背面周緣部處理步驟對基板5之外周端往內周側的既定之處理範圍71進行處理，而從基板5之背面將去除對象物去除；且於背面處理步驟及背面周緣部處理步驟，將重疊處理範圍72加以重複地進行處理。藉此，基板處理系統1可良好地從基板5之背面將去除對象物去除，能夠將污染物質等之轉印、或基板5之背面凹凸所產生的失焦等，亦即因為去除對象物之殘留而對基板5之表面處理造成的不良影響加以抑制。As described above, the substrate processing system 1 processes the predetermined processing range 50 in the vicinity of the inner peripheral portion of the back surface of the substrate 5 to the vicinity of the substrate support 34 in the back surface processing step, and removes the removed object from the back surface of the substrate 5, and In the back peripheral portion processing step, the predetermined processing range 71 on the outer peripheral side of the substrate 5 is processed on the inner peripheral side, and the removed object is removed from the back surface of the substrate 5; and in the back surface processing step and the back peripheral portion processing step, The overlapping processing range 72 is processed repeatedly. Thereby, the substrate processing system 1 can remove the object to be removed from the back surface of the substrate 5, and can transfer the contaminant or the like, or the defocus of the back surface of the substrate 5, that is, the object to be removed. The residual effect on the surface treatment of the substrate 5 is suppressed.
1‧‧‧基板處理系統
2‧‧‧框體
3‧‧‧基板送入送出台
4‧‧‧基板處理室
5‧‧‧基板
6‧‧‧載具
7‧‧‧基板搬運裝置
8‧‧‧基板翻轉裝置
9‧‧‧表面處理裝置
10‧‧‧背面處理裝置
11‧‧‧背面周緣部處理裝置
12‧‧‧控制裝置
13‧‧‧記憶媒體
14‧‧‧殼體
15‧‧‧基板固持機構
16‧‧‧基板處理機構
17‧‧‧旋轉軸
18‧‧‧吸附台
20‧‧‧基板旋轉驅動機構
21‧‧‧抽吸機構
22‧‧‧杯體
23‧‧‧支撐軸
24‧‧‧臂部
25‧‧‧噴嘴
26‧‧‧清洗液供給源
27‧‧‧流量調整器
28‧‧‧臂部旋轉驅動機構
29‧‧‧殼體
30‧‧‧基板固持機構
31‧‧‧基板處理機構
32‧‧‧旋轉軸
33‧‧‧平台
34‧‧‧基板支撐體
35‧‧‧基板旋轉驅動機構
36‧‧‧移動機構
37‧‧‧杯體
38‧‧‧噴吐流路
39‧‧‧惰性氣體供給源
40‧‧‧流量調整器
41‧‧‧支撐軸
42‧‧‧臂部
43‧‧‧刷頭
44‧‧‧清洗刷
45‧‧‧噴嘴
46‧‧‧清洗液供給源
47‧‧‧流量調整器
48‧‧‧臂部升降‧旋轉驅動機構
49‧‧‧刷子旋轉驅動機構
50‧‧‧處理範圍
52‧‧‧殼體
53‧‧‧基板固持機構
54‧‧‧基板處理機構
55‧‧‧旋轉軸
56‧‧‧吸附台
57‧‧‧旋轉驅動機構
58‧‧‧抽吸機構
59‧‧‧杯體
60‧‧‧支撐軸
61‧‧‧臂部
62‧‧‧刷頭
63‧‧‧清洗刷
64‧‧‧噴嘴
65‧‧‧清洗液供給源
66‧‧‧流量調整器
67、68‧‧‧旋轉驅動機構
69‧‧‧小直徑刷子部
70‧‧‧大直徑刷子部
71‧‧‧處理範圍
72‧‧‧重疊處理範圍1‧‧‧Substrate processing system
2‧‧‧ frame
3‧‧‧Substrate feeding station
4‧‧‧Substrate processing room
5‧‧‧Substrate
6‧‧‧ Vehicles
7‧‧‧Substrate handling device
8‧‧‧Substrate turning device
9‧‧‧ Surface treatment equipment
10‧‧‧Back processing unit
11‧‧‧Back peripheral processing unit
12‧‧‧Control device
13‧‧‧Memory Media
14‧‧‧Shell
15‧‧‧Substrate holding mechanism
16‧‧‧Substrate processing mechanism
17‧‧‧Rotary axis
18‧‧‧Adsorption station
20‧‧‧Substrate rotary drive mechanism
21‧‧‧sucking mechanism
22‧‧‧ cup body
23‧‧‧Support shaft
24‧‧‧arm
25‧‧‧ nozzle
26‧‧‧cleaning fluid supply source
27‧‧‧Flow Regulator
28‧‧‧ Arm rotary drive mechanism
29‧‧‧Shell
30‧‧‧Substrate retention mechanism
31‧‧‧Substrate processing mechanism
32‧‧‧Rotary axis
33‧‧‧ platform
34‧‧‧Substrate support
35‧‧‧Substrate rotary drive mechanism
36‧‧‧Mobile agencies
37‧‧‧ cup body
38‧‧‧Spray flow path
39‧‧‧Inert gas supply
40‧‧‧Flow Regulator
41‧‧‧Support shaft
42‧‧‧arms
43‧‧‧ brush head
44‧‧‧ cleaning brush
45‧‧‧Nozzles
46‧‧‧cleaning fluid supply
47‧‧‧Flow Regulator
48‧‧‧ Arm lift, rotary drive mechanism
49‧‧‧Brush rotary drive mechanism
50‧‧‧Scope of treatment
52‧‧‧ housing
53‧‧‧Substrate holding mechanism
54‧‧‧Substrate processing mechanism
55‧‧‧Rotary axis
56‧‧‧Adsorption station
57‧‧‧Rotary drive mechanism
58‧‧‧Smoking mechanism
59‧‧‧ cup body
60‧‧‧Support shaft
61‧‧‧arms
62‧‧‧ brush head
63‧‧‧ cleaning brush
64‧‧‧Nozzles
65‧‧‧cleaning fluid supply source
66‧‧‧Flow Regulator
67, 68‧‧‧Rotary drive mechanism
69‧‧‧Small diameter brush section
70‧‧‧ Large diameter brush section
71‧‧‧Scope of treatment
72‧‧‧Overlapping range
圖1係顯示基板處理系統的平面說明圖。 圖2係顯示表面處理裝置的側面說明圖。 圖3係顯示表面處理裝置之動作的側面說明圖。 圖4係顯示背面處理裝置的側面說明圖。 圖5係顯示背面處理裝置之動作的側面說明圖。 圖6(a)～6(c)係顯示處理範圍的說明圖。 圖7係顯示背面周緣部處理裝置的側面說明圖。 圖8係顯示背面周緣部處理裝置之動作的側面說明圖。 圖9(a)～9(d)係顯示處理步驟的說明圖。1 is a plan explanatory view showing a substrate processing system. Fig. 2 is a side explanatory view showing a surface treatment apparatus. Fig. 3 is a side explanatory view showing the operation of the surface treatment apparatus. Fig. 4 is a side explanatory view showing the back surface processing apparatus. Fig. 5 is a side explanatory view showing the operation of the back surface processing apparatus. 6(a) to 6(c) are explanatory views showing the processing range. Fig. 7 is a side explanatory view showing the processing device for the back peripheral portion. Fig. 8 is a side explanatory view showing the operation of the back peripheral portion processing apparatus. 9(a) to 9(d) are explanatory views showing the processing steps.
1‧‧‧基板處理系統 1‧‧‧Substrate processing system
2‧‧‧框體 2‧‧‧ frame
3‧‧‧基板送入送出台 3‧‧‧Substrate feeding station
4‧‧‧基板處理室 4‧‧‧Substrate processing room
5‧‧‧基板 5‧‧‧Substrate
6‧‧‧載具 6‧‧‧ Vehicles
7‧‧‧基板搬運裝置 7‧‧‧Substrate handling device
8‧‧‧基板翻轉裝置 8‧‧‧Substrate turning device
9‧‧‧表面處理裝置 9‧‧‧ Surface treatment equipment
10‧‧‧背面處理裝置 10‧‧‧Back processing unit
11‧‧‧背面周緣部處理裝置 11‧‧‧Back peripheral processing unit
12‧‧‧控制裝置 12‧‧‧Control device
13‧‧‧記憶媒體 13‧‧‧Memory Media
Claims (11)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2011151123A JP5705666B2 (en) | 2011-07-07 | 2011-07-07 | Substrate processing method, substrate processing system, and computer-readable storage medium storing substrate processing program |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201624595A TW201624595A (en) | 2016-07-01 |
| TWI593040B true TWI593040B (en) | 2017-07-21 |
Family
ID=47692204
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105104685A TWI593040B (en) | 2011-07-07 | 2012-07-02 | Substrate processing method, substrate processing system, and computer-readable storage medium storing a substrate processing program |
| TW101123769A TWI529836B (en) | 2011-07-07 | 2012-07-02 | Substrate processing method, substrate processing system, and computer-readable storage medium storing a substrate processing program |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101123769A TWI529836B (en) | 2011-07-07 | 2012-07-02 | Substrate processing method, substrate processing system, and computer-readable storage medium storing a substrate processing program |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5705666B2 (en) |
| KR (2) | KR101600938B1 (en) |
| TW (2) | TWI593040B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5904169B2 (en) | 2013-07-23 | 2016-04-13 | 東京エレクトロン株式会社 | Substrate cleaning apparatus, substrate cleaning method, and storage medium |
| KR102478317B1 (en) | 2015-04-08 | 2022-12-16 | 도쿄엘렉트론가부시키가이샤 | Substrate processing system |
| US10155252B2 (en) * | 2015-04-30 | 2018-12-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor apparatus and washing method |
| JP6552404B2 (en) * | 2015-12-17 | 2019-07-31 | 東京エレクトロン株式会社 | Substrate processing method, substrate processing system, substrate processing apparatus, and computer readable storage medium storing substrate processing program |
| JP7175119B2 (en) * | 2018-07-25 | 2022-11-18 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
| WO2022185929A1 (en) | 2021-03-03 | 2022-09-09 | 東京エレクトロン株式会社 | Substrate processing method, and substrate processing system |
| JP2022152751A (en) | 2021-03-29 | 2022-10-12 | 東京エレクトロン株式会社 | Droplet discharge device and method |
| JP2022188854A (en) | 2021-06-10 | 2022-12-22 | 東京エレクトロン株式会社 | Substrate processing apparatus and control method of substrate processing apparatus |
| KR20230161356A (en) | 2022-05-18 | 2023-11-27 | 도쿄엘렉트론가부시키가이샤 | Substrate processing apparatus, substrate processing method, and recording medium |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3892635B2 (en) * | 2000-02-04 | 2007-03-14 | 大日本スクリーン製造株式会社 | Cleaning device |
| JP2004247582A (en) * | 2003-02-14 | 2004-09-02 | Tokyo Electron Ltd | Cleaning brush and substrate cleaning device |
| US8356376B2 (en) * | 2008-06-18 | 2013-01-22 | Tokyo Electron Limited | Substrate cleaning apparatus, substrate cleaning method, and storage medium |
-
2011
- 2011-07-07 JP JP2011151123A patent/JP5705666B2/en active Active
-
2012
- 2012-06-28 KR KR1020120070058A patent/KR101600938B1/en active IP Right Grant
- 2012-07-02 TW TW105104685A patent/TWI593040B/en active
- 2012-07-02 TW TW101123769A patent/TWI529836B/en active
-
2016
- 2016-02-23 KR KR1020160021071A patent/KR101688492B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013021026A (en) | 2013-01-31 |
| TW201624595A (en) | 2016-07-01 |
| JP5705666B2 (en) | 2015-04-22 |
| KR101600938B1 (en) | 2016-03-08 |
| KR20160026959A (en) | 2016-03-09 |
| TWI529836B (en) | 2016-04-11 |
| KR20130006309A (en) | 2013-01-16 |
| KR101688492B1 (en) | 2016-12-21 |
| TW201308492A (en) | 2013-02-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI593040B (en) | Substrate processing method, substrate processing system, and computer-readable storage medium storing a substrate processing program | |
| TWI787555B (en) | Substrate processing apparatus and processing method | |
| TW202220094A (en) | Substrate treatment device, substrate treatment method and recording medium | |
| TWI612558B (en) | Substrate processing apparatus and substrate processing method, and computer readable recording medium on which a substrate processing program is recorded | |
| TWI759364B (en) | Substrate treatment device, substrate treatment method and recording medium | |
| JP6335596B2 (en) | Grinding equipment | |
| TWI502685B (en) | Detachment method and computer storage medium and detachment apparatus and detachment system | |
| TWI584366B (en) | A substrate processing apparatus and a substrate processing method and a computer-readable recording medium for recording a substrate processing program | |
| TW201620676A (en) | Processing module, processing apparatus, and processing method | |
| JP2018086692A (en) | Grinder | |
| TW201934210A (en) | Substrate processing device and substrate processing method | |
| JP2007053154A (en) | Cleaning device for mask substrate, and cleaning method for mask substrate using the device | |
| TWI584362B (en) | Stripping system and stripping method | |
| TWI501332B (en) | Detachment system and detachment method and computer strage medium | |
| TWI584364B (en) | Substrate liquid processing device and substrate liquid treatment method | |
| JP7002874B2 (en) | Board processing system | |
| CN111386598B (en) | Substrate conveying device, substrate processing system, substrate processing method and computer storage medium | |
| TWI765125B (en) | Substrate processing apparatus, substrate processing method, and storage medium storing program | |
| TWI417951B (en) | Substrate liquid treatment apparatus, substrate liquid treatment method and storage medium storing substrate liquid treatment program | |
| JP6027640B2 (en) | Substrate processing system | |
| JP2011066198A (en) | Grinding processing device | |
| JP6983311B2 (en) | Board processing system and board processing method | |
| JP6513492B2 (en) | Substrate processing method, substrate processing apparatus and storage medium | |
| US20230013401A1 (en) | Post-chemical mechanical polishing brush cleaning box | |
| JP2024044924A (en) | Substrate cleaning equipment and substrate cleaning method |