JP5705666B2 - Substrate processing method, substrate processing system, and computer-readable storage medium storing substrate processing program - Google Patents

Substrate processing method, substrate processing system, and computer-readable storage medium storing substrate processing program Download PDF

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JP5705666B2
JP5705666B2 JP2011151123A JP2011151123A JP5705666B2 JP 5705666 B2 JP5705666 B2 JP 5705666B2 JP 2011151123 A JP2011151123 A JP 2011151123A JP 2011151123 A JP2011151123 A JP 2011151123A JP 5705666 B2 JP5705666 B2 JP 5705666B2
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substrate
processing
back surface
range
processing step
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JP2013021026A5 (en
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範臣 内田
範臣 内田
光則 中森
光則 中森
章一郎 日高
章一郎 日高
信彦 毛利
信彦 毛利
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Tokyo Electron Ltd
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Priority to TW101123769A priority patent/TWI529836B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02082—Cleaning product to be cleaned
    • H01L21/0209—Cleaning of wafer backside
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes

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Description

本発明は、基板の裏面の除去対象物を除去するための基板処理方法、基板処理システム及び基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体に関するものである。   The present invention relates to a substrate processing method, a substrate processing system, and a computer readable storage medium storing a substrate processing program for removing an object to be removed from the back surface of a substrate.

従来より、半導体部品やフラットパネルディスプレイなどを製造する場合には、半導体ウエハや液晶基板などの基板を基板保持機構で保持した状態で、基板の表面に対してエッチング処理や成膜処理や洗浄処理などの各種の処理を繰り返し行っている。   Conventionally, when manufacturing semiconductor components, flat panel displays, etc., the substrate surface such as a semiconductor wafer or a liquid crystal substrate is held by a substrate holding mechanism, and etching, film formation or cleaning is performed on the surface of the substrate. Various processes such as are repeated.

そのため、基板に対して各種の処理を行う際に、基板の裏面が基板保持機構に接触することによって、基板の裏面にパーティクル等の汚染物質が付着したり、基板の裏面に凸部が形成されてしまうことがある。   Therefore, when various types of processing are performed on the substrate, the back surface of the substrate comes into contact with the substrate holding mechanism, so that contaminants such as particles adhere to the back surface of the substrate or convex portions are formed on the back surface of the substrate. May end up.

この基板の裏面に付着した汚染物質や基板の裏面に形成された凸部は、基板の各種処理に悪影響を及ぼすおそれがある。そのため、基板の裏面に回転するブラシで洗浄や研磨などの処理を施して基板の裏面から汚染物質や凸部などの除去対象物を除去している。その際には、基板の表面がパターン形成に使用されるために基板の表面を吸着して基板を保持することができず、基板の外周端縁を基板支持体で支持しながら基板の裏面の内周部から外周側の所定範囲をブラシで処理している（たとえば、特許文献１参照。）。   Contaminants adhering to the back surface of the substrate and convex portions formed on the back surface of the substrate may adversely affect various types of processing of the substrate. For this reason, the object to be removed such as contaminants and convex portions is removed from the back surface of the substrate by performing processing such as cleaning and polishing with a rotating brush on the back surface of the substrate. In that case, since the surface of the substrate is used for pattern formation, the substrate surface cannot be adsorbed and held, and the outer peripheral edge of the substrate is supported by the substrate support while A predetermined range from the inner periphery to the outer periphery is processed with a brush (see, for example, Patent Document 1).

特開平１０−２０９２５４号公報Japanese Patent Laid-Open No. 10-209254

ところが、基板の外周端縁を基板支持体で支持した場合には、基板の裏面の内周部から外周側の所定範囲をブラシで処理しても、基板の外周端縁付近ではブラシが基板支持体に接触してしまい、基板の外周端縁付近までブラシで処理することができなかった。   However, when the outer peripheral edge of the substrate is supported by the substrate support, the brush supports the substrate near the outer peripheral edge of the substrate even if a predetermined range from the inner peripheral part to the outer peripheral side of the back surface of the substrate is processed with a brush. It contacted the body and could not be processed with a brush up to the vicinity of the outer peripheral edge of the substrate.

そのため、従来においては、基板の外周端縁まで精度良く処理することが困難であり、基板の外周端縁付近の除去対象物を良好に除去することができず、基板の裏面に残存する汚染物質や基板の裏面の凸部の影響で基板の表面での処理精度が低下してしまい、除去対象物が残存することによって基板の表面の処理に悪影響を与えるおそれがあった。   Therefore, in the past, it is difficult to accurately process to the outer peripheral edge of the substrate, the removal target object near the outer peripheral edge of the substrate cannot be removed well, and contaminants remaining on the back surface of the substrate Further, the processing accuracy on the surface of the substrate is lowered due to the influence of the convex portion on the back surface of the substrate, and there is a possibility that the processing of the surface of the substrate is adversely affected by the removal target.

そこで、本発明では、基板の裏面の除去対象物を除去する基板処理方法において、基板支持体で基板の外周端縁を支持し、基板の裏面の内周部から基板支持体の近傍までの所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも外周側の除去対象物を除去しない裏面処理工程と、基板の裏面の外周端から内周側の所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも内周側の除去対象物を除去しない裏面周縁部処理工程とを有し、裏面処理工程での処理範囲と裏面周縁部処理工程での処理範囲とが重なる重畳処理範囲を設け、前記裏面処理工程の後に基板の反転を行ってから前記裏面周縁部処理工程を行う、又は、前記裏面周縁部処理工程の後に基板の反転を行ってから前記裏面処理工程を行うことにした。
Therefore, in the present invention, in a substrate processing method for removing an object to be removed on the back surface of a substrate, the substrate support supports the outer peripheral edge of the substrate, and the predetermined distance from the inner periphery of the back surface of the substrate to the vicinity of the substrate support is determined. The removal target object is removed in the processing range of the substrate and the removal target object on the outer peripheral side than the predetermined processing range is not removed, and the removal target object in the predetermined processing range on the inner peripheral side from the outer peripheral edge of the back surface of the substrate. And a back edge processing step that does not remove the object to be removed on the inner periphery side of the predetermined processing range, and the processing range in the back surface processing step overlaps the processing range in the back surface periphery processing step. An overlap processing range is provided , and the back surface peripheral portion processing step is performed after the substrate is reversed after the back surface processing step, or the substrate is reversed after the back surface peripheral portion processing step. Decided to do .

また、前記重畳処理範囲は、裏面処理工程と裏面周縁部処理工程のうちで先に行う工程で用いる基板保持機構の偏心量よりも広い範囲とすることにした。   In addition, the superimposing process range is set to a range wider than the amount of eccentricity of the substrate holding mechanism used in the first process among the back surface process and the back surface edge process.

また、前記裏面処理工程を行った後に、前記裏面周縁部処理工程を行い、その後、基板の表面の除去対象物を除去する表面処理工程を行うことにした。   Moreover, after performing the said back surface treatment process, it decided to perform the said back surface peripheral part process process, and the surface treatment process which removes the removal target object of the surface of a board | substrate after that.

また、前記裏面周縁部処理工程を行った後に、基板の表面の除去対象物を除去する表面処理工程を行い、その後、前記裏面処理工程を行うことにした。   Moreover, after performing the said back surface peripheral part process process, the surface process process which removes the removal target object of the surface of a board | substrate was performed, and it decided to perform the said back surface process process after that.

また、前記裏面周縁部処理工程では、基板の裏面の内周部を吸着して保持することにした。   Moreover, in the said back surface peripheral part process process, it decided to adsorb | suck and hold | maintain the inner peripheral part of the back surface of a board | substrate.

また、本発明では、基板の裏面の除去対象物を除去する基板処理システムにおいて、基板支持体で基板の外周端縁を支持し、基板の裏面の内周部から基板支持体の近傍までの所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも外周側の除去対象物を除去しない裏面処理装置と、基板の裏面の外周端から内周側の所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも内周側の除去対象物を除去しない裏面周縁部処理装置と、基板を反転させる基板反転装置とを有し、裏面処理装置での処理範囲と裏面周縁部処理装置での処理範囲とが重なる重畳処理範囲を設け、前記裏面処理装置による除去処理の後に前記基板反転装置による基板の反転を行ってから前記裏面周縁部処理装置による除去処理を行う、又は、前記裏面周縁部処理装置による除去処理の後に前記基板反転装置による基板の反転を行ってから前記裏面処理装置による除去処理を行うことにした。
Further, according to the present invention, in the substrate processing system for removing an object to be removed on the back surface of the substrate, the substrate support supports the outer peripheral edge of the substrate, and the predetermined distance from the inner periphery of the back surface of the substrate to the vicinity of the substrate support is determined. A back surface processing apparatus that removes an object to be removed within the processing range and does not remove an object to be removed on the outer peripheral side of the predetermined processing range; and the back edge processing apparatus without removing the inner peripheral side of the removal target than the predetermined processing range to remove, and a substrate inverting device for inverting the substrate, the processing range in the rear surface treatment apparatus and a back side rim portion A superposition processing range that overlaps with a processing range in the processing apparatus is provided , and after the removal process by the back surface processing apparatus, the substrate is reversed by the substrate reversing apparatus and then the removal processing by the back surface peripheral edge processing apparatus is performed, or The back edge And after performing the inversion of the substrate by the substrate reversing device after removal processing by the processing unit to perform the removal processing by the rear surface treatment apparatus.

また、前記重畳処理範囲は、裏面処理装置と裏面周縁部処理装置のうちで先に動作させる装置で用いる基板保持機構の偏心量よりも広い範囲とすることにした。   In addition, the superimposition processing range is set to a range wider than the amount of eccentricity of the substrate holding mechanism used in the apparatus that operates first among the back surface processing apparatus and the back surface peripheral edge processing apparatus.

また、前記裏面処理装置で基板の裏面を処理した後に、前記裏面周縁部処理装置で基板の裏面を処理し、その後、基板の表面の除去対象物を除去する表面処理装置で基板の表面を処理することにした。   In addition, after the back surface of the substrate is processed by the back surface processing apparatus, the back surface of the substrate is processed by the back surface peripheral portion processing apparatus, and then the surface of the substrate is processed by the surface processing apparatus that removes an object to be removed from the surface of the substrate. Decided to do.

また、前記裏面周縁部処理装置で基板の裏面を処理した後に、基板の表面の除去対象物を除去する表面処理装置で基板の表面を処理し、その後、前記裏面処理装置で基板の裏面を処理することにした。   In addition, after the back surface of the substrate is processed by the back surface peripheral edge processing apparatus, the surface of the substrate is processed by a surface processing apparatus that removes an object to be removed from the surface of the substrate, and then the back surface of the substrate is processed by the back surface processing apparatus. Decided to do.

また、前記裏面周縁部処理装置は、基板の裏面の内周部を吸着して保持することにした。   In addition, the back surface peripheral portion processing apparatus adsorbs and holds the inner peripheral portion of the back surface of the substrate.

また、本発明では、基板の裏面の除去対象物を除去する基板処理システムを用いて基板の裏面を処理させる基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体において、基板支持体で基板の外周端を支持し、基板の裏面の内周部から基板支持体の近傍までの所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも外周側の除去対象物を除去しない裏面処理装置を用いて基板の裏面を処理させる裏面処理工程と、基板の裏面の外周端から内周側の所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも内周側の除去対象物を除去しない裏面周縁部処理装置を用いて基板の裏面を処理させる裏面周縁部処理工程とを有し、裏面処理工程での処理範囲と裏面周縁部処理工程での処理範囲とが重なる重畳処理範囲を設け、前記裏面処理工程の後に基板反転装置によって基板を反転させてから前記裏面周縁部処理工程を行う、又は、前記裏面周縁部処理工程の後に基板反転装置によって基板を反転させてから前記裏面処理工程を行うことにした。 Further, according to the present invention, in a computer-readable storage medium storing a substrate processing program for processing a back surface of a substrate using a substrate processing system for removing an object to be removed from the back surface of the substrate, an outer peripheral edge of the substrate is supported by the substrate support. A back surface processing apparatus that removes an object to be removed in a predetermined processing range from the inner periphery of the back surface of the substrate to the vicinity of the substrate support and does not remove an object to be removed on the outer peripheral side of the predetermined processing range. Using a back surface processing step for processing the back surface of the substrate, and removing an object to be removed in a predetermined processing range on the inner peripheral side from an outer peripheral edge of the back surface of the substrate, and removing an object on the inner peripheral side from the predetermined processing range. using backside edge processing apparatus is not removed and a back side rim portion processing step of processing the back surface of the substrate, the superimposition processing range and the processing ranges overlap in the processing range and the back edge processing steps in the back surface treatment process Only performs the back edge processing step from inverts the substrate by the substrate inverting device after the backside processing steps, or, the back processing from inverts the substrate by the substrate inverting device after the back edge processing step Decided to do the process .

本発明では、基板の裏面の端縁部から除去対象物を良好に除去することができ、除去対象物が残存することによる基板の表面の処理に与える悪影響を抑制することができる。   In the present invention, the removal target can be satisfactorily removed from the edge of the back surface of the substrate, and adverse effects on the processing of the surface of the substrate due to the removal target remaining can be suppressed.

基板処理システムを示す平面説明図。Plane explanatory drawing which shows a substrate processing system. 表面処理装置を示す側面説明図。Side surface explanatory drawing which shows a surface treatment apparatus. 表面処理装置の動作を示す側面説明図。Side surface explanatory drawing which shows operation | movement of a surface treatment apparatus. 裏面処理装置を示す側面説明図。Side surface explanatory drawing which shows a back surface processing apparatus. 裏面処理装置の動作を示す側面説明図。Side surface explanatory drawing which shows operation | movement of a back surface processing apparatus. 処理範囲を示す説明図。Explanatory drawing which shows a process range. 裏面周縁部処理装置を示す側面説明図。Side surface explanatory drawing which shows a back surface peripheral part processing apparatus. 裏面周縁部処理装置の動作を示す側面説明図。Side surface explanatory drawing which shows operation | movement of a back surface peripheral part processing apparatus. 処理工程を示す説明図。Explanatory drawing which shows a process process.

以下に、本発明に係る基板処理システム及び基板処理方法並びに基板処理プログラムの具体的な構成について図面を参照しながら説明する。   A specific configuration of a substrate processing system, a substrate processing method, and a substrate processing program according to the present invention will be described below with reference to the drawings.

図１に示すように、基板処理システム１は、筺体２の前端部に基板搬入出台３を形成するとともに、基板搬入出台３の後部に基板処理室４を形成している。   As shown in FIG. 1, the substrate processing system 1 forms a substrate loading / unloading table 3 at the front end of the housing 2 and forms a substrate processing chamber 4 at the rear of the substrate loading / unloading table 3.

基板搬入出台３は、基板５（ここでは、半導体ウエハ。）を複数枚（たとえば、25枚。）まとめて収容した複数個（ここでは、３個。）のキャリア６を上部に左右に並べて載置している。   The substrate carry-in / out table 3 has a plurality of (here, three) carriers 6 in which a plurality of (for example, 25, here) substrates 5 (here, semiconductor wafers) are collectively accommodated and placed side by side on the top. It is location.

そして、基板搬入出台３は、キャリア６と後部の基板処理室４との間で基板５の搬入及び搬出を行うようにしている。   The substrate loading / unloading table 3 loads and unloads the substrate 5 between the carrier 6 and the rear substrate processing chamber 4.

基板処理室４は、中央部に基板搬送装置７を配置し、基板搬送装置７の一側部に基板反転装置８と表面処理装置９とを前後に並べて配置するとともに、基板搬送装置７の他側部に裏面処理装置10と裏面周縁部処理装置11とを前後に並べて配置している。ここで、基板反転装置８は、基板５の表裏を反転させる装置である。表面処理装置９は、具体的な構成は後述するが、基板５の表面に付着した汚染物質や基板５の表面に形成された凸部などの除去対象物を基板５の表面から除去する装置である。裏面処理装置10は、具体的な構成は後述するが、基板支持体で外周端縁を支持した基板５の裏面の内周部から基板支持体の近傍までの範囲の除去対象物を除去する装置である。裏面周縁部処理装置11は、具体的な構成は後述するが、基板５の外周端から内周側の範囲の除去対象物を除去する装置である。
In the substrate processing chamber 4, the substrate transfer device 7 is arranged at the center, and the substrate reversing device 8 and the surface treatment device 9 are arranged side by side on one side of the substrate transfer device 7. The back surface processing device 10 and the back surface edge processing device 11 are arranged side by side on the side. Here, the substrate reversing device 8 is a device for reversing the front and back of the substrate 5. The surface treatment device 9 is a device that removes contaminants attached to the surface of the substrate 5 and removal objects such as protrusions formed on the surface of the substrate 5 from the surface of the substrate 5, although a specific configuration will be described later. is there. Rear surface treatment apparatus 10, a specific configuration will be described later, removing the removal target ranging from the inner peripheral portion of the back surface of the board 5 supporting the outer circumferential edge in the substrate support to the vicinity of the substrate support device It is. Although a specific configuration will be described later, the back surface peripheral edge processing apparatus 11 is an apparatus that removes a removal target in a range from the outer peripheral end of the substrate 5 to the inner peripheral side.

そして、基板処理室４は、基板搬送装置７で基板搬入出台３の所定のキャリア６から１枚の基板５を受取り、基板搬送装置７で表面処理装置９、裏面処理装置10、裏面周縁部処理装置11、及び基板反転装置８との間で基板５を搬送するとともに各装置9〜11で基板５を処理し、その基板５を基板搬送装置７で基板搬入出台３の所定のキャリア６に受渡すようにしている。   The substrate processing chamber 4 receives one substrate 5 from a predetermined carrier 6 of the substrate loading / unloading table 3 by the substrate transfer device 7, and the substrate transfer device 7 performs the surface processing device 9, the back surface processing device 10, and the back surface peripheral portion processing. The substrate 5 is transferred between the device 11 and the substrate reversing device 8, and the substrate 5 is processed by each of the devices 9 to 11, and the substrate 5 is received by the predetermined carrier 6 of the substrate loading / unloading table 3 by the substrate transfer device 7. I am trying to pass it.

この基板処理システム１は、制御装置12（コンピュータ）が接続されており、制御装置12で読み取り可能な記憶媒体13に記憶した基板処理プログラムにしたがって基板５を処理する。なお、記憶媒体13は、基板処理プログラム等の各種プログラムを記憶できる媒体であればよく、ＲＯＭやＲＡＭなどの半導体メモリ型の記憶媒体であってもハードディスクやＣＤ−ＲＯＭなどのディスク型の記憶媒体であってもよい。   The substrate processing system 1 is connected to a control device 12 (computer) and processes the substrate 5 in accordance with a substrate processing program stored in a storage medium 13 readable by the control device 12. The storage medium 13 may be any medium that can store various programs such as a substrate processing program. Even if it is a semiconductor memory type storage medium such as a ROM or a RAM, a disk type storage medium such as a hard disk or a CD-ROM. It may be.

なお、本発明に係る基板処理システムは、上記構成のように基板反転装置８と表面処理装置９と裏面処理装置10と裏面周縁部処理装置11とを一体的に構成したシステムに限定されるものではなく、各装置8〜11をそれぞれ別々に独立して構成したシステムであってもよい。また、基板処理システムは、基板５の裏面から除去対象物を除去するものであり、後述するように、洗浄液を用いた洗浄処理によって除去対象物を除去する場合に限られず、研磨材を用いた研磨処理によって除去対象物を除去するものでもよい。   The substrate processing system according to the present invention is limited to a system in which the substrate reversing device 8, the surface processing device 9, the back surface processing device 10, and the back surface edge processing device 11 are integrally configured as described above. Instead, it may be a system in which each of the devices 8 to 11 is independently configured. In addition, the substrate processing system is for removing the removal target from the back surface of the substrate 5, and is not limited to the case where the removal target is removed by a cleaning process using a cleaning liquid, as will be described later. The object to be removed may be removed by a polishing process.

この基板処理システム１において、表面処理装置９は、図２に示すように、ケーシング14の内部に基板保持機構15と基板処理機構16とを収容している。   In the substrate processing system 1, the surface processing apparatus 9 houses a substrate holding mechanism 15 and a substrate processing mechanism 16 in a casing 14 as shown in FIG.

基板保持機構15は、基板５の表面（主面：回路形成面）を上側に向けた状態で基板５の裏面の中央部（内周部）を吸着して基板５を水平に保持するとともに、保持した基板５を回転させる機構である。この基板保持機構15は、回転軸17の上端部に円板状の吸引テーブル18を取付けている。回転軸17には、基板回転駆動機構20が接続されており、吸引テーブル18には、吸引機構21が接続されている。基板回転駆動機構20及び吸引機構21は、制御装置12に接続されており、制御装置12でそれぞれ制御される。なお、吸引テーブル18の外周外方には、処理液等の飛散を防止するカップ22を設けている。基板保持機構15は、基板５の裏面を吸着して基板５を保持する構造に限られず、基板５の外周端縁を基板支持体で支持して基板５を保持する構造としてもよい。
The substrate holding mechanism 15 holds the substrate 5 horizontally by adsorbing the central portion (inner peripheral portion) of the back surface of the substrate 5 with the front surface (main surface: circuit forming surface) of the substrate 5 facing upward. This is a mechanism for rotating the held substrate 5. The substrate holding mechanism 15 has a disk-like suction table 18 attached to the upper end portion of the rotating shaft 17. A substrate rotation drive mechanism 20 is connected to the rotation shaft 17, and a suction mechanism 21 is connected to the suction table 18. The substrate rotation drive mechanism 20 and the suction mechanism 21 are connected to the control device 12, and are controlled by the control device 12, respectively. A cup 22 is provided outside the outer periphery of the suction table 18 to prevent the processing liquid and the like from scattering. The substrate holding mechanism 15 is not limited to a structure that holds the substrate 5 by sucking the back surface of the substrate 5, and may be a structure that holds the substrate 5 by supporting the outer peripheral edge of the substrate 5 with a substrate support.

基板処理機構16は、基板５の表面に洗浄液を供給し、基板５の表面を洗浄液で洗浄処理することによって基板５の表面から除去対象物を除去する機構である。この基板処理機構16は、支持軸23の上端部にアーム24の基端部を取付け、アーム24の先端部にノズル25を取付けている。また、基板処理機構16は、洗浄液を供給するための洗浄液供給源26をノズル25に流量調整器27を介して接続している。支持軸23には、アーム回転駆動機構28が接続されている。流量調整器27及びアーム回転駆動機構28は、制御装置12に接続されており、制御装置12でそれぞれ制御される。   The substrate processing mechanism 16 is a mechanism that removes an object to be removed from the surface of the substrate 5 by supplying a cleaning liquid to the surface of the substrate 5 and cleaning the surface of the substrate 5 with the cleaning liquid. In the substrate processing mechanism 16, the base end portion of the arm 24 is attached to the upper end portion of the support shaft 23, and the nozzle 25 is attached to the distal end portion of the arm 24. Further, the substrate processing mechanism 16 connects a cleaning liquid supply source 26 for supplying a cleaning liquid to the nozzle 25 via a flow rate regulator 27. An arm rotation drive mechanism 28 is connected to the support shaft 23. The flow rate regulator 27 and the arm rotation drive mechanism 28 are connected to the control device 12, and are controlled by the control device 12, respectively.

そして、表面処理装置９は、図３に示すように、基板保持機構15で基板５を水平に保持しながら回転させ、基板処理機構16で基板５の表面に洗浄液を供給し、ノズル25を基板５の表面の中央部から外周端へ移動させる。これにより、表面処理装置９は、基板５の表面全体を洗浄処理して基板５の表面から除去対象物を除去する。   Then, as shown in FIG. 3, the surface treatment apparatus 9 rotates while holding the substrate 5 horizontally by the substrate holding mechanism 15, supplies the cleaning liquid to the surface of the substrate 5 by the substrate processing mechanism 16, and sets the nozzle 25 to the substrate. 5 is moved from the center of the surface of the surface 5 to the outer peripheral edge. As a result, the surface treatment apparatus 9 cleans the entire surface of the substrate 5 and removes the removal target from the surface of the substrate 5.

また、基板処理システム１において、裏面処理装置10は、図４に示すように、ケーシング29の内部に基板保持機構30と基板処理機構31とを収容している。   Further, in the substrate processing system 1, the back surface processing apparatus 10 houses a substrate holding mechanism 30 and a substrate processing mechanism 31 inside a casing 29 as shown in FIG. 4.

基板保持機構30は、基板５の裏面を上側に向けた状態で基板５の外周端縁を挟持して基板５を水平に保持するとともに、保持した基板５を回転させる機構である。この基板保持機構30は、回転軸32の上端部に円板状のテーブル33を取付け、テーブル33の外周部に３個の基板支持体34を円周方向に間隔をあけて取付けている。基板支持体34は、基板搬送装置７から基板５を受取る受取位置と基板５の外周端縁を挟持する保持位置との間を移動可能となっており、保持位置では基板５の外周端上方を覆っている（図６参照。）。回転軸32には、基板回転駆動機構35が接続されており、基板支持体34には、移動機構36が接続されている。基板回転駆動機構35及び移動機構36は、制御装置12に接続されており、制御装置12でそれぞれ制御される。なお、テーブル33の外周外方には、処理液等の飛散を防止するカップ37を設けている。 Substrate holding mechanism 30, the rear surface of the substrate 5 by sandwiching the peripheral edge of the substrate 5 in a state of facing upward while holding the substrate 5 horizontally, a mechanism for rotating the substrate 5 held. In the substrate holding mechanism 30, a disk-shaped table 33 is attached to the upper end portion of the rotary shaft 32, and three substrate supports 34 are attached to the outer peripheral portion of the table 33 at intervals in the circumferential direction. The substrate support 34 is movable between a holding position for holding the outer peripheral edge of the receiving position and the substrate 5 for receiving the substrate 5 from the substrate transport device 7, in the holding position the outer peripheral edge above the substrate 5 It covers (see FIG. 6). A substrate rotation drive mechanism 35 is connected to the rotating shaft 32, and a moving mechanism 36 is connected to the substrate support. The substrate rotation driving mechanism 35 and the moving mechanism 36 are connected to the control device 12, and are controlled by the control device 12, respectively. A cup 37 is provided outside the outer periphery of the table 33 to prevent the processing liquid and the like from scattering.

この基板保持機構30には、回転軸32及びテーブル33の中央部に吐出流路38が形成されており、その吐出流路38に、不活性ガス（たとえば、窒素ガス）を供給するための不活性ガス供給源39を流量調整器40を介して接続している。流量調整器40は、制御装置12に接続されており、制御装置12で制御される。   The substrate holding mechanism 30 has a discharge channel 38 formed at the center of the rotary shaft 32 and the table 33, and an inert gas (for example, nitrogen gas) is supplied to the discharge channel 38. An active gas supply source 39 is connected via a flow rate regulator 40. The flow rate regulator 40 is connected to the control device 12 and is controlled by the control device 12.

基板処理機構31は、基板５の裏面に洗浄液を供給しながら基板５の裏面をブラシで洗浄処理することによって基板５の裏面から除去対象物を除去する機構である。この基板処理機構31は、支持軸41の上端部にアーム42の基端部を取付け、アーム42の先端部にブラシヘッド43を取付け、ブラシヘッド43に洗浄ブラシ44を取付けている。また、基板処理機構31は、基板５（テーブル33）の中央部に向けてノズル45を配置し、ノズル45に洗浄液を供給するための洗浄液供給源46を流量調整器47を介して接続している。支持軸41には、アーム昇降・回転駆動機構48が接続されており、ブラシヘッド43には、ブラシ回転駆動機構49が接続されている。流量調整器47、アーム昇降・回転駆動機構48及びブラシ回転駆動機構49は、制御装置12に接続されており、制御装置12でそれぞれ制御される。   The substrate processing mechanism 31 is a mechanism that removes an object to be removed from the back surface of the substrate 5 by cleaning the back surface of the substrate 5 with a brush while supplying a cleaning liquid to the back surface of the substrate 5. In the substrate processing mechanism 31, the base end portion of the arm 42 is attached to the upper end portion of the support shaft 41, the brush head 43 is attached to the distal end portion of the arm 42, and the cleaning brush 44 is attached to the brush head 43. Further, the substrate processing mechanism 31 has a nozzle 45 disposed toward the center of the substrate 5 (table 33), and a cleaning liquid supply source 46 for supplying a cleaning liquid to the nozzle 45 is connected via a flow rate regulator 47. Yes. An arm raising / lowering / rotation drive mechanism 48 is connected to the support shaft 41, and a brush rotation drive mechanism 49 is connected to the brush head 43. The flow rate regulator 47, the arm raising / lowering / rotation drive mechanism 48, and the brush rotation drive mechanism 49 are connected to the control device 12, and are controlled by the control device 12, respectively.

そして、裏面処理装置10は、図５に示すように、基板保持機構30で基板５を裏面を上側に向けた状態で水平に保持しながら回転させ、基板処理機構31で基板５の裏面に洗浄液を供給し、洗浄ブラシ44を回転させながら基板５の裏面の内周部（ここでは、中央部）から洗浄ブラシ44が基板支持体34に接触しない位置まで移動させる。これにより、裏面処理装置10は、図６(a)に示すように、基板５の裏面の内周部から基板支持体34の近傍までの所定の処理範囲50を洗浄処理して基板５の裏面から除去対象物を除去する。   Then, as shown in FIG. 5, the back surface processing apparatus 10 rotates the substrate 5 while holding the substrate 5 horizontally with the back surface facing upward by the substrate holding mechanism 30, and the substrate processing mechanism 31 applies the cleaning liquid to the back surface of the substrate 5. And the cleaning brush 44 is moved from the inner peripheral portion (here, the central portion) of the back surface of the substrate 5 to a position where the cleaning brush 44 does not contact the substrate support 34 while rotating the cleaning brush 44. As a result, the back surface processing apparatus 10 cleans a predetermined processing range 50 from the inner periphery of the back surface of the substrate 5 to the vicinity of the substrate support 34 as shown in FIG. Remove the object to be removed.

また、基板処理システム１において、裏面周縁部処理装置11は、図７に示すように、ケーシング52の内部に基板保持機構53と基板処理機構54とを収容している。   Further, in the substrate processing system 1, the rear surface peripheral edge processing apparatus 11 houses a substrate holding mechanism 53 and a substrate processing mechanism 54 inside a casing 52 as shown in FIG. 7.

基板保持機構53は、基板５の表面を上側に向けた状態で基板５の裏面の中央部（内周部）を吸着して基板５を水平に保持するとともに、保持した基板５を回転させる機構である。この基板保持機構53は、回転軸55の上端部に円板状の吸引テーブル56を取付けている。回転軸55には、回転駆動機構57が接続されており、吸引テーブル56には、吸引機構58が接続されている。回転駆動機構57及び吸引機構58は、制御装置12に接続されており、制御装置12でそれぞれ制御される。なお、吸引テーブル56の外周外方には、処理液等の飛散を防止するカップ59を設けている。   The substrate holding mechanism 53 holds the substrate 5 horizontally by adsorbing the central portion (inner peripheral portion) of the back surface of the substrate 5 with the front surface of the substrate 5 facing upward, and rotates the held substrate 5. It is. The substrate holding mechanism 53 has a disk-like suction table 56 attached to the upper end portion of the rotating shaft 55. A rotation drive mechanism 57 is connected to the rotation shaft 55, and a suction mechanism 58 is connected to the suction table 56. The rotation drive mechanism 57 and the suction mechanism 58 are connected to the control device 12, and are controlled by the control device 12, respectively. A cup 59 is provided outside the outer periphery of the suction table 56 to prevent the processing liquid and the like from scattering.

基板処理機構54は、基板５の外周端縁及び基板５の裏面の外周端に洗浄液を供給しながら基板５の外周端縁及び基板５の裏面の外周端を同時にブラシで洗浄処理することによって基板５の裏面から除去対象物を除去する機構である。この基板処理機構54は、支持軸60の上端部にアーム61の基端部を取付け、アーム61の先端部にブラシヘッド62を取付け、ブラシヘッド62に洗浄ブラシ63を取付けている。また、基板処理機構54は、基板５の外周端に向けてノズル64を配置し、ノズル64に洗浄液を供給するための洗浄液供給源65を流量調整器66を介して接続している。支持軸60には、回転駆動機構67が接続されており、ブラシヘッド62には、回転駆動機構68が接続されている。流量調整器66及び回転駆動機構67,68は、制御装置12に接続されており、制御装置12でそれぞれ制御される。ここで、洗浄ブラシ63は、基板５の外周端縁に当接して洗浄処理する小径ブラシ部69と、小径ブラシ部69の下方に連設し、小径ブラシ部69よりも大径で基板５の裏面の外周端に当接して洗浄処理する大径ブラシ部70とで構成し、小径ブラシ部69を基板５の外周端縁に当接させるとともに大径ブラシ部70を基板５の裏面の外周端に当接させる。さらに、基板５の外周端縁と裏面の外周端とを同時に洗浄処理できる。なお、洗浄ブラシ63は、小径ブラシ部69を省略して大径ブラシ部70だけで構成し、大径ブラシ部70を基板５の外周端縁から内周方向に移動させて基板５の裏面の外周端を処理するようにしてもよい。   The substrate processing mechanism 54 simultaneously cleans the outer peripheral edge of the substrate 5 and the outer peripheral edge of the back surface of the substrate 5 with a brush while supplying cleaning liquid to the outer peripheral edge of the substrate 5 and the outer peripheral edge of the back surface of the substrate 5. 5 is a mechanism for removing an object to be removed from the back surface of the member 5. In the substrate processing mechanism 54, the base end portion of the arm 61 is attached to the upper end portion of the support shaft 60, the brush head 62 is attached to the distal end portion of the arm 61, and the cleaning brush 63 is attached to the brush head 62. Further, the substrate processing mechanism 54 has a nozzle 64 disposed toward the outer peripheral edge of the substrate 5, and a cleaning liquid supply source 65 for supplying a cleaning liquid to the nozzle 64 is connected via a flow rate regulator 66. A rotation drive mechanism 67 is connected to the support shaft 60, and a rotation drive mechanism 68 is connected to the brush head 62. The flow rate regulator 66 and the rotation drive mechanisms 67 and 68 are connected to the control device 12, and are controlled by the control device 12, respectively. Here, the cleaning brush 63 is arranged in contact with the outer peripheral edge of the substrate 5 to perform a cleaning process, and is provided below the small diameter brush portion 69, and has a diameter larger than that of the small diameter brush portion 69. A large-diameter brush portion 70 that is in contact with the outer peripheral edge of the back surface and performs a cleaning process. The small-diameter brush portion 69 is in contact with the outer peripheral edge of the substrate 5 and the large-diameter brush portion 70 is connected to the outer peripheral edge of the back surface of the substrate 5. Abut. Furthermore, the outer peripheral edge of the substrate 5 and the outer peripheral edge of the back surface can be cleaned at the same time. The cleaning brush 63 is configured by only the large-diameter brush portion 70, omitting the small-diameter brush portion 69, and the large-diameter brush portion 70 is moved from the outer peripheral edge of the substrate 5 to the inner peripheral direction so as to be disposed on the back surface of the substrate 5. The outer peripheral edge may be processed.

そして、裏面周縁部処理装置11は、図８に示すように、基板保持機構53で基板５を裏面を下側に向けた状態で水平に保持しながら回転させ、基板処理機構54で基板５の裏面の外周端に洗浄液を供給し、洗浄ブラシ63を回転させながら基板５の外周端縁へ移動させる。これにより、裏面周縁部処理装置11は、図６(b)に示すように、基板５の外周端縁及び裏面の外周端から内周側の所定の処理範囲71を洗浄処理して基板５の裏面から除去対象物を除去する。   Then, as shown in FIG. 8, the back surface peripheral edge processing apparatus 11 rotates the substrate 5 while holding the substrate 5 horizontally with the back surface facing downward by the substrate holding mechanism 53. The cleaning liquid is supplied to the outer peripheral edge of the back surface, and the cleaning brush 63 is rotated and moved to the outer peripheral edge of the substrate 5. As a result, as shown in FIG. 6 (b), the rear surface peripheral edge processing apparatus 11 cleans the predetermined processing range 71 on the inner peripheral side from the outer peripheral edge of the substrate 5 and the outer peripheral edge of the rear surface, Remove the object to be removed from the back side.

基板処理システム１では、図６(c)に示すように、裏面処理装置10で処理する基板５の裏面の処理範囲50と、裏面周縁部処理装置11で処理する基板５の裏面の処理範囲71との間に、裏面処理装置10及び裏面周縁部処理装置11の両方で処理する略リング状の重畳処理範囲72を設定している。基板処理システム１では、この重畳処理範囲72を裏面処理装置10と裏面周縁部処理装置11とで前後して重ねて処理することで、基板５の裏面から除去対象物を良好に除去して、除去対象物が残存することによる基板５の表面の処理に与える悪影響を抑制している。   In the substrate processing system 1, as shown in FIG. 6 (c), the processing range 50 of the back surface of the substrate 5 processed by the back surface processing apparatus 10 and the processing range 71 of the back surface of the substrate 5 processed by the back surface peripheral edge processing apparatus 11. Between the two, a substantially ring-shaped superimposition processing range 72 to be processed by both the back surface processing device 10 and the back surface edge processing device 11 is set. In the substrate processing system 1, the removal processing object 72 is removed from the back surface of the substrate 5 satisfactorily by processing the overlapping processing range 72 by the back surface processing apparatus 10 and the back surface peripheral edge processing apparatus 11 in an overlapping manner. The adverse effect on the processing of the surface of the substrate 5 due to the removal object remaining is suppressed.

この重畳処理範囲72は、広く設定するほど除去対象物を良好に除去することができるが、その分だけ処理時間が長くなりスループットの低下を招くため、少なくとも裏面処理装置10の基板保持機構30と裏面周縁部処理装置11の基板保持機構53のうちで先に基板５の処理を行ういずれかの基板保持機構30,53の偏心量よりも広い範囲とすれば、基板保持機構30,53の構造上の偏心量を吸収して基板５の裏面を良好に処理することができる。特に、洗浄ブラシ63を小径ブラシ部69と大径ブラシ部70とで構成した場合には、小径ブラシ部69から張出した大径ブラシ部70の半径方向の張出量を基板保持機構30,53の偏心量よりも大きくすることで、重畳処理範囲72を基板保持機構30,53の偏心量よりも広い範囲とすることが容易にできる。   The wider the overlapping processing range 72, the better the removal target can be removed.However, the processing time becomes longer and the throughput is reduced, so that at least the substrate holding mechanism 30 of the back surface processing apparatus 10 and If the range is larger than the amount of eccentricity of any of the substrate holding mechanisms 30 and 53 that process the substrate 5 first among the substrate holding mechanisms 53 of the back surface peripheral edge processing apparatus 11, the structure of the substrate holding mechanisms 30 and 53 By absorbing the amount of eccentricity above, the back surface of the substrate 5 can be processed satisfactorily. In particular, when the cleaning brush 63 is composed of the small-diameter brush portion 69 and the large-diameter brush portion 70, the amount of protrusion in the radial direction of the large-diameter brush portion 70 protruding from the small-diameter brush portion 69 is determined by the substrate holding mechanism 30, 53. By making the amount larger than the amount of eccentricity, it is possible to easily make the overlapping processing range 72 a range wider than the amount of eccentricity of the substrate holding mechanisms 30 and 53.

基板処理システム１は、以上に説明したように構成しており、記憶媒体13に記憶した基板処理プログラムにしたがって以下に説明するように基板５の処理を行う。   The substrate processing system 1 is configured as described above, and processes the substrate 5 as described below according to the substrate processing program stored in the storage medium 13.

まず、基板処理プログラムでは、図９(a)に示すように、基板反転工程を実行する。この基板反転工程では、基板反転装置８を用いて基板５の表裏を反転させ、基板５の裏面を上方に向けた状態にする。   First, in the substrate processing program, as shown in FIG. In this substrate reversal process, the substrate reversing device 8 is used to reverse the front and back of the substrate 5 so that the back surface of the substrate 5 faces upward.

次に、基板処理プログラムでは、図９(a)に示すように、裏面処理工程を実行する。この裏面処理工程では、裏面処理装置10を用いて基板５の裏面の内周部から基板支持体34の近傍までの所定の処理範囲50を洗浄処理して基板５の裏面から除去対象物を除去する。   Next, in the substrate processing program, as shown in FIG. In this back surface processing step, a predetermined processing range 50 from the inner periphery of the back surface of the substrate 5 to the vicinity of the substrate support 34 is cleaned using the back surface processing apparatus 10 to remove the removal target from the back surface of the substrate 5. To do.

具体的には、基板処理システム１は、図５に示すように、制御装置12で基板保持機構30の移動機構36を制御して基板支持体34を開いた状態とし、基板搬送装置７から１枚の基板５を受取った後に移動機構36を制御して基板支持体34を閉じた状態とし、これにより、基板５の外周端縁を基板支持体34で保持する。   Specifically, as shown in FIG. 5, the substrate processing system 1 controls the moving mechanism 36 of the substrate holding mechanism 30 with the control device 12 to open the substrate support 34, so After receiving the substrate 5, the moving mechanism 36 is controlled to close the substrate support 34, whereby the outer peripheral edge of the substrate 5 is held by the substrate support 34.

その後、基板処理システム１は、制御装置12で基板保持機構30の基板回転駆動機構35を制御して回転軸32を回転させ、基板５を回転させる。また、制御装置12で基板処理機構31の流量調整器47を制御して、洗浄液供給源46からノズル45を介して基板５の裏面中央部に向けて洗浄液を吐出する。さらに、制御装置12で基板処理機構31のアーム昇降・回転駆動機構48及びブラシ回転駆動機構49を制御して、洗浄ブラシ44を回転させながら基板５の裏面中央部と基板支持体34の近傍の間の処理範囲50を基板５の裏面に沿って移動させ、これにより、基板５の裏面の内周部（中央部）から基板支持体34の近傍までの所定の処理範囲50で除去対象物を除去する。その際に、制御装置12で流量調整器40を制御して、不活性ガス供給源39から吐出流路38を介して基板５の表面（下面：パターン形成面）に向けて不活性ガスを吐出するようにしている。これにより、基板５の裏面（上面）で除去された除去対象物が基板５の表面（下面）に回り込んで付着してしまうのを防止している。   Thereafter, the substrate processing system 1 controls the substrate rotation drive mechanism 35 of the substrate holding mechanism 30 with the control device 12 to rotate the rotation shaft 32 and rotate the substrate 5. Further, the controller 12 controls the flow rate regulator 47 of the substrate processing mechanism 31 to discharge the cleaning liquid from the cleaning liquid supply source 46 toward the center of the back surface of the substrate 5 through the nozzle 45. Further, the control device 12 controls the arm raising / lowering / rotation drive mechanism 48 and the brush rotation drive mechanism 49 of the substrate processing mechanism 31 to rotate the cleaning brush 44 while rotating the cleaning brush 44 in the vicinity of the center of the back surface of the substrate 5 and the substrate support 34. The processing range 50 is moved along the back surface of the substrate 5, thereby removing the object to be removed within a predetermined processing range 50 from the inner peripheral portion (center portion) of the back surface of the substrate 5 to the vicinity of the substrate support 34. Remove. At that time, the control device 12 controls the flow rate regulator 40 to discharge the inert gas from the inert gas supply source 39 to the surface (lower surface: pattern formation surface) of the substrate 5 through the discharge flow path 38. Like to do. This prevents the object to be removed that has been removed on the back surface (upper surface) of the substrate 5 from going around and adhering to the front surface (lower surface) of the substrate 5.

その後、基板処理システム１は、制御装置12で流量調整器40,47を制御して洗浄液及び不活性ガスの吐出を停止し、必要に応じて基板５のリンス処理や乾燥処理を行った後に、制御装置12で基板保持機構30の基板回転駆動機構35を制御して基板５の回転を停止し、その後、制御装置12で基板保持機構30の移動機構36を制御して基板支持体34を開いた状態とし、基板搬送装置７へ基板５を受渡す。   Thereafter, the substrate processing system 1 controls the flow rate regulators 40 and 47 with the control device 12 to stop the discharge of the cleaning liquid and the inert gas, and after rinsing and drying the substrate 5 as necessary, The control device 12 controls the substrate rotation driving mechanism 35 of the substrate holding mechanism 30 to stop the rotation of the substrate 5, and then the control device 12 controls the moving mechanism 36 of the substrate holding mechanism 30 to open the substrate support 34. The substrate 5 is delivered to the substrate transfer device 7.

次に、基板処理プログラムでは、図９(a)に示すように、基板反転工程を実行する。この基板反転工程では、基板反転装置８を用いて基板５の表裏を反転させ、基板５の表面を上方に向けた状態にする。   Next, in the substrate processing program, as shown in FIG. In this substrate reversal process, the substrate reversing device 8 is used to reverse the front and back of the substrate 5 so that the surface of the substrate 5 faces upward.

次に、基板処理プログラムでは、図９(a)に示すように、裏面周縁部処理工程を実行する。この裏面周縁部処理工程では、裏面周縁部処理装置11を用いて基板５の外周端縁及び基板５の外周端から内周側の所定の処理範囲71を洗浄処理して基板５の裏面から除去対象物を除去する。   Next, in the substrate processing program, as shown in FIG. In this back surface peripheral edge processing step, a predetermined processing range 71 on the inner peripheral side from the outer peripheral edge of the substrate 5 and the outer peripheral edge of the substrate 5 is cleaned and removed from the back surface of the substrate 5 using the back surface peripheral edge processing device 11. Remove the object.

具体的には、基板処理システム１は、図８に示すように、基板搬送装置７から１枚の基板５を受取った後に、制御装置12で基板保持機構53の吸引機構58を制御して吸引テーブル56で基板５の裏面の中央部を吸引し、吸引テーブル56の上部に基板５を保持する。   Specifically, as shown in FIG. 8, the substrate processing system 1 controls the suction mechanism 58 of the substrate holding mechanism 53 by the control device 12 after receiving a single substrate 5 from the substrate transfer device 7 and performs suction. The center portion of the back surface of the substrate 5 is sucked by the table 56, and the substrate 5 is held on the upper portion of the suction table 56.

その後、基板処理システム１は、制御装置12で基板保持機構53の回転駆動機構57を制御して回転軸55を回転させ、基板５を回転させる。また、制御装置12で基板処理機構54の流量調整器66を制御して、洗浄液供給源65からノズル64を介して基板５の裏面の外周端に向けて洗浄液を吐出する。さらに、制御装置12で基板処理機構54の回転駆動機構67,68を制御して、洗浄ブラシ63を回転させながら基板５の外周端縁に当接させ、洗浄ブラシ63の小径ブラシ部69で基板５の外周端縁を洗浄すると同時に洗浄ブラシ63の大径ブラシ部70で基板５の裏面の外周端から内周側の所定の処理範囲71を洗浄する。これにより、基板５の外周端縁及び基板５の外周端から内周側の所定の処理範囲71で除去対象物を除去する。   Thereafter, the substrate processing system 1 controls the rotation driving mechanism 57 of the substrate holding mechanism 53 with the control device 12 to rotate the rotation shaft 55 and rotate the substrate 5. Further, the controller 12 controls the flow controller 66 of the substrate processing mechanism 54 to discharge the cleaning liquid from the cleaning liquid supply source 65 toward the outer peripheral edge of the back surface of the substrate 5 through the nozzle 64. Further, the control device 12 controls the rotation driving mechanisms 67 and 68 of the substrate processing mechanism 54 to contact the outer peripheral edge of the substrate 5 while rotating the cleaning brush 63, and the substrate is moved by the small-diameter brush portion 69 of the cleaning brush 63. At the same time, a predetermined processing range 71 from the outer peripheral end of the back surface of the substrate 5 to the inner peripheral side is cleaned by the large-diameter brush portion 70 of the cleaning brush 63. As a result, the object to be removed is removed from the outer peripheral edge of the substrate 5 and the outer peripheral end of the substrate 5 within a predetermined processing range 71 on the inner peripheral side.

その後、基板処理システム１は、制御装置12で流量調整器66を制御して洗浄液の吐出を停止し、必要に応じて基板５のリンス処理や乾燥処理を行った後に、制御装置12で基板保持機構53の回転駆動機構57を制御して基板５の回転を停止し、その後、制御装置12で基板保持機構53の吸引機構58を制御して基板５の吸引を停止し、基板搬送装置７へ基板５を受渡す。   Thereafter, the substrate processing system 1 controls the flow controller 66 with the control device 12 to stop the discharge of the cleaning liquid, and after the substrate 5 is rinsed and dried as necessary, the substrate is held by the control device 12. The rotation drive mechanism 57 of the mechanism 53 is controlled to stop the rotation of the substrate 5, and then the suction mechanism 58 of the substrate holding mechanism 53 is controlled by the control device 12 to stop the suction of the substrate 5, and the substrate transfer device 7 is moved to. Deliver the substrate 5.

次に、基板処理プログラムでは、図９(a)に示すように、表面処理工程を実行する。この表面処理工程では、表面処理装置９を用いて基板５の表面を洗浄処理して基板５の表面から除去対象物を除去する。   Next, in the substrate processing program, as shown in FIG. In this surface treatment process, the surface of the substrate 5 is cleaned using the surface treatment apparatus 9 to remove the removal target from the surface of the substrate 5.

具体的には、基板処理システム１は、図３に示すように、基板搬送装置７から１枚の基板５を受取った後に、制御装置12で基板保持機構15の吸引機構21を制御して吸引テーブル19で基板５の裏面の中央部を吸引し、吸引テーブル19の上部に基板５を保持する。   Specifically, as shown in FIG. 3, the substrate processing system 1 receives a single substrate 5 from the substrate transfer device 7 and then controls the suction mechanism 21 of the substrate holding mechanism 15 with the control device 12 to perform suction. The center of the back surface of the substrate 5 is sucked by the table 19 and the substrate 5 is held on the suction table 19.

その後、基板処理システム１は、制御装置12で基板保持機構15の基板回転駆動機構20を制御して回転軸17を回転させ、基板５を回転させる。また、制御装置12で基板処理機構16の流量調整器27を制御して、洗浄液供給源26からノズル25を介して基板５の表面中央部に向けて洗浄液を吐出する。さらに、制御装置12で基板処理機構16のアーム回転駆動機構28を制御して、ノズル25を基板５の表面中央部と外周端縁の間を移動させ、これにより、基板５の表面から除去対象物を除去する。   Thereafter, the substrate processing system 1 controls the substrate rotation drive mechanism 20 of the substrate holding mechanism 15 with the control device 12 to rotate the rotation shaft 17 and rotate the substrate 5. Further, the controller 12 controls the flow rate regulator 27 of the substrate processing mechanism 16 to discharge the cleaning liquid from the cleaning liquid supply source 26 toward the center of the surface of the substrate 5 through the nozzle 25. Further, the control device 12 controls the arm rotation drive mechanism 28 of the substrate processing mechanism 16 to move the nozzle 25 between the center of the surface of the substrate 5 and the outer peripheral edge, thereby removing the nozzle 25 from the surface of the substrate 5. Remove objects.

その後、基板処理システム１は、制御装置12で流量調整器27を制御して洗浄液の吐出を停止し、必要に応じて基板５のリンス処理や乾燥処理を行った後に、制御装置12で基板保持機構15の基板回転駆動機構20を制御して基板５の回転を停止し、その後、制御装置12で基板保持機構15の吸引機構21を制御して基板５の吸引を停止し、基板搬送装置７へ基板５を受渡す。   Thereafter, the substrate processing system 1 controls the flow rate regulator 27 with the control device 12 to stop the discharge of the cleaning liquid, and rinses and drys the substrate 5 as necessary, and then holds the substrate with the control device 12. The substrate rotation drive mechanism 20 of the mechanism 15 is controlled to stop the rotation of the substrate 5, and then the suction mechanism 21 of the substrate holding mechanism 15 is controlled by the control device 12 to stop the suction of the substrate 5. Deliver the substrate 5 to.

基板処理プログラムで実行する基板処理方法は、図９(a)に示すように基板反転工程・裏面処理工程・基板反転工程・裏面周縁部処理工程・表面処理工程の順で行う場合に限られず、裏面処理工程と裏面周縁部処理工程とを適宜組み合わせて処理することができ、図９(b)に示すように、裏面周縁部処理工程を行った後に、表面処理工程を行い、その後、基板反転工程を行い、裏面処理工程と基板反転工程を行うようにしてもよい。さらに、図９(c),(d)に示すように、裏面周縁部処理工程において、基板５の裏面を吸着して保持し基板５の裏面の周縁部の処理に加えて基板５の表面の処理（表面処理工程）を同じ処理装置で行うようにしてもよい。   The substrate processing method executed by the substrate processing program is not limited to the case of performing the substrate inversion process, the back surface processing process, the substrate inversion process, the back edge processing process, and the surface processing process as shown in FIG. The back surface processing step and the back surface peripheral portion processing step can be appropriately combined and processed, as shown in FIG. 9B, after the back surface peripheral portion processing step is performed, the surface processing step is performed, and then the substrate is inverted. You may make it perform a process and to perform a back surface process and a substrate inversion process. Further, as shown in FIGS. 9C and 9D, in the back surface peripheral edge processing step, the back surface of the substrate 5 is sucked and held, and in addition to the processing of the peripheral edge of the back surface of the substrate 5, You may make it perform a process (surface treatment process) with the same processing apparatus.

図９(a)に示すように、裏面処理工程を行った後に、裏面周縁部処理工程を行い、その後、表面処理工程を行った場合には、表面処理工程が最後に行われるために、基板５の表面を良好な状態にすることができ、また、基板５の裏面の処理が表面の処理よりも先に行われるために、基板５の表面を処理する際に基板保持機構15の吸引テーブル18を汚染することがない。   As shown in FIG. 9A, after performing the back surface processing step, performing the back surface edge processing step, and then performing the surface processing step, the surface processing step is performed last. The surface of the substrate 5 can be in a good state, and the processing of the back surface of the substrate 5 is performed before the processing of the surface, so that the suction table of the substrate holding mechanism 15 is processed when the surface of the substrate 5 is processed. 18 will not be polluted.

また、図９(b)に示すように、裏面周縁部処理工程を行った後に、表面処理工程を行い、その後、裏面処理工程を行った場合には、裏面周縁部処理工程や表面処理工程で基板５の裏面に付着するおそれのある汚染物質等を最後の裏面処理工程で除去することができ、基板５の表面への転写を防止することができ、また、裏面周縁部処理工程で基板５の裏面に吸引跡が残ってしまっても最後の裏面処理工程で吸引跡を除去することができる。   Moreover, as shown in FIG.9 (b), after performing a back surface peripheral part treatment process, when performing a surface treatment process and then performing a back surface process process, in a back surface peripheral part process process and a surface treatment process, Contaminants and the like that may adhere to the back surface of the substrate 5 can be removed in the final back surface processing step, and transfer to the surface of the substrate 5 can be prevented. Even if the suction trace remains on the back surface of the substrate, the suction trace can be removed in the last back surface processing step.

また、図９(c),(d)に示すように、裏面周縁部処理工程で表面処理工程を同時に行う場合には、基板５の表裏の処理に要する時間を短縮することができスループットを向上させることができる。   Further, as shown in FIGS. 9C and 9D, when the surface treatment process is simultaneously performed in the back surface peripheral edge treatment process, the time required for processing the front and back of the substrate 5 can be shortened and the throughput is improved. Can be made.

以上に説明したように、基板処理システム１では、裏面処理工程で基板５の裏面の内周部から基板支持体34の近傍までの所定の処理範囲50を処理して基板５の裏面から除去対象物を除去するとともに、裏面周縁部処理工程で基板５の外周端から内周側の所定の処理範囲71を処理して基板５の裏面から除去対象物を除去し、裏面処理工程及び裏面周縁部処理工程で重畳処理範囲72を重ねて処理している。これにより、基板処理システム１では、基板５の裏面から除去対象物を良好に除去することができ、汚染物質等の転写や基板５の裏面の凹凸によるデフォーカスなどといった除去対象物が残存することによる基板５の表面の処理に与える悪影響を抑制することができる。   As described above, in the substrate processing system 1, the predetermined processing range 50 from the inner peripheral portion of the back surface of the substrate 5 to the vicinity of the substrate support 34 is processed in the back surface processing step to be removed from the back surface of the substrate 5. In addition to removing the object, a predetermined processing range 71 from the outer peripheral edge of the substrate 5 to the inner peripheral side is processed in the back surface peripheral edge processing step to remove the object to be removed from the back surface of the substrate 5. The superimposition processing range 72 is overlapped and processed in the processing step. Thereby, in the substrate processing system 1, the removal target can be satisfactorily removed from the back surface of the substrate 5, and the removal target such as transfer of contaminants or defocus due to unevenness on the back surface of the substrate 5 remains. The adverse effect on the surface treatment of the substrate 5 can be suppressed.

１ 基板処理システム
５ 基板
10 裏面処理装置
11 裏面周縁部処理装置
34 基板支持体
50 処理範囲
71 処理範囲
72 重畳処理範囲 1 Substrate processing system 5 Substrate
10 Backside processing equipment
11 Back edge processing equipment
34 Substrate support
50 Processing range
71 Processing range
72 Overlay processing range

Claims (11)

基板の裏面の除去対象物を除去する基板処理方法において、
基板支持体で基板の外周端を支持し、基板の裏面の内周部から基板支持体の近傍までの所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも外周側の除去対象物を除去しない裏面処理工程と、
基板の裏面の外周端から内周側の所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも内周側の除去対象物を除去しない裏面周縁部処理工程と、
を有し、
裏面処理工程での処理範囲と裏面周縁部処理工程での処理範囲とが重なる重畳処理範囲を設け、
前記裏面処理工程の後に基板の反転を行ってから前記裏面周縁部処理工程を行う、又は、前記裏面周縁部処理工程の後に基板の反転を行ってから前記裏面処理工程を行うことを特徴とする基板処理方法。 In the substrate processing method for removing the object to be removed on the back surface of the substrate,
The substrate support is used to support the outer peripheral edge of the substrate, and the removal target is removed in a predetermined processing range from the inner peripheral portion of the back surface of the substrate to the vicinity of the substrate support, and the removal target on the outer peripheral side from the predetermined processing range. A backside treatment process that does not remove objects ,
A back edge processing step that removes the removal target in a predetermined processing range on the inner peripheral side from the outer peripheral edge of the back surface of the substrate, and does not remove the removal target on the inner peripheral side from the predetermined processing range ;
Have
Provide a superimposition processing range where the processing range in the back surface processing step and the processing range in the back edge processing step overlap ,
The back surface peripheral portion processing step is performed after the substrate is inverted after the back surface processing step, or the back surface processing step is performed after the substrate is inverted after the back surface peripheral portion processing step. Substrate processing method. 前記重畳処理範囲は、裏面処理工程と裏面周縁部処理工程のうちで先に行う工程で用いる基板保持機構の偏心量よりも広い範囲としたことを特徴とする請求項１に記載の基板処理方法。   2. The substrate processing method according to claim 1, wherein the superimposition processing range is a range wider than the amount of eccentricity of the substrate holding mechanism used in the first step of the back surface processing step and the back surface peripheral edge processing step. . 前記裏面処理工程を行った後に、前記裏面周縁部処理工程を行い、その後、基板の表面の除去対象物を除去する表面処理工程を行うことを特徴とする請求項１又は請求項２に記載の基板処理方法。   3. The method according to claim 1, wherein after the back surface processing step is performed, the back surface edge portion processing step is performed, and thereafter, a surface processing step of removing a removal target on the surface of the substrate is performed. Substrate processing method. 前記裏面周縁部処理工程を行った後に、基板の表面の除去対象物を除去する表面処理工程を行い、その後、前記裏面処理工程を行うことを特徴とする請求項１又は請求項２に記載の基板処理方法。   3. The method according to claim 1, wherein after performing the back surface peripheral portion processing step, performing a surface processing step of removing an object to be removed from the surface of the substrate, and thereafter performing the back surface processing step. Substrate processing method. 前記裏面周縁部処理工程では、基板の裏面の内周部を吸着して保持することを特徴とする請求項１〜請求項４のいずれかに記載の基板処理方法。   5. The substrate processing method according to claim 1, wherein in the back surface peripheral portion processing step, the inner peripheral portion of the back surface of the substrate is sucked and held. 基板の裏面の除去対象物を除去する基板処理システムにおいて、
基板支持体で基板の外周端を支持し、基板の裏面の内周部から基板支持体の近傍までの所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも外周側の除去対象物を除去しない裏面処理装置と、
基板の裏面の外周端から内周側の所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも内周側の除去対象物を除去しない裏面周縁部処理装置と、
基板を反転させる基板反転装置と、
を有し、
裏面処理装置での処理範囲と裏面周縁部処理装置での処理範囲とが重なる重畳処理範囲を設け、
前記裏面処理装置による除去処理の後に前記基板反転装置による基板の反転を行ってから前記裏面周縁部処理装置による除去処理を行う、又は、前記裏面周縁部処理装置による除去処理の後に前記基板反転装置による基板の反転を行ってから前記裏面処理装置による除去処理を行うことを特徴とする基板処理システム。 In a substrate processing system for removing an object to be removed on the back side of a substrate,
The substrate support is used to support the outer peripheral edge of the substrate, and the removal target is removed in a predetermined processing range from the inner peripheral portion of the back surface of the substrate to the vicinity of the substrate support, and the removal target on the outer peripheral side from the predetermined processing range. A backside treatment device that does not remove objects ,
A back surface peripheral portion processing apparatus that removes the removal target object in a predetermined processing range on the inner peripheral side from the outer peripheral end of the back surface of the substrate and does not remove the removal target object on the inner peripheral side than the predetermined processing range ;
A substrate reversing device for reversing the substrate;
Have
Provide a superimposition processing range where the processing range in the back surface processing device and the processing range in the back surface edge processing device overlap ,
After the removal process by the back surface processing apparatus, the substrate is reversed by the substrate reversing apparatus and then the removal process by the back surface peripheral edge processing apparatus is performed, or after the removal process by the back surface peripheral edge processing apparatus A substrate processing system characterized in that after the substrate is inverted by the step, the removal processing by the back surface processing apparatus is performed . 前記重畳処理範囲は、裏面処理装置と裏面周縁部処理装置のうちで先に動作させる装置で用いる基板保持機構の偏心量よりも広い範囲としたことを特徴とする請求項６に記載の基板処理システム。   The substrate processing according to claim 6, wherein the superimposition processing range is a range wider than an eccentric amount of a substrate holding mechanism used in a device that is operated first among the back surface processing device and the back surface edge processing device. system. 前記裏面処理装置で基板の裏面を処理した後に、前記裏面周縁部処理装置で基板の裏面を処理し、その後、基板の表面の除去対象物を除去する表面処理装置で基板の表面を処理することを特徴とする請求項６又は請求項７に記載の基板処理システム。   After the back surface of the substrate is processed by the back surface processing apparatus, the back surface of the substrate is processed by the back surface periphery processing apparatus, and then the surface of the substrate is processed by a surface processing apparatus that removes an object to be removed from the surface of the substrate. The substrate processing system according to claim 6, wherein: 前記裏面周縁部処理装置で基板の裏面を処理した後に、基板の表面の除去対象物を除去する表面処理装置で基板の表面を処理し、その後、前記裏面処理装置で基板の裏面を処理することを特徴とする請求項６又は請求項７に記載の基板処理システム。   After processing the back surface of the substrate with the back surface peripheral portion processing apparatus, processing the surface of the substrate with a surface processing apparatus that removes an object to be removed from the surface of the substrate, and then processing the back surface of the substrate with the back surface processing apparatus. The substrate processing system according to claim 6, wherein: 前記裏面周縁部処理装置は、基板の裏面の内周部を吸着して保持することを特徴とする請求項６〜請求項９のいずれかに記載の基板処理システム。   The substrate processing system according to claim 6, wherein the back surface peripheral portion processing apparatus sucks and holds the inner peripheral portion of the back surface of the substrate. 基板の裏面の除去対象物を除去する基板処理システムを用いて基板の裏面を処理させる基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体において、
基板支持体で基板の外周端を支持し、基板の裏面の内周部から基板支持体の近傍までの所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも外周側の除去対象物を除去しない裏面処理装置を用いて基板の裏面を処理させる裏面処理工程と、
基板の裏面の外周端から内周側の所定の処理範囲で除去対象物を除去し前記所定の処理範囲よりも内周側の除去対象物を除去しない裏面周縁部処理装置を用いて基板の裏面を処理させる裏面周縁部処理工程と、
を有し、
裏面処理工程での処理範囲と裏面周縁部処理工程での処理範囲とが重なる重畳処理範囲を設け、
前記裏面処理工程の後に基板反転装置によって基板を反転させてから前記裏面周縁部処理工程を行う、又は、前記裏面周縁部処理工程の後に基板反転装置によって基板を反転させてから前記裏面処理工程を行うことを特徴とする基板処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体。
In a computer-readable storage medium storing a substrate processing program for processing a back surface of a substrate using a substrate processing system for removing an object to be removed from the back surface of the substrate,
The substrate support is used to support the outer peripheral edge of the substrate, and the removal target is removed in a predetermined processing range from the inner peripheral portion of the back surface of the substrate to the vicinity of the substrate support, and the removal target on the outer peripheral side from the predetermined processing range. A back surface processing step of processing the back surface of the substrate using a back surface processing apparatus that does not remove the object ,
The back surface of the substrate using a back surface peripheral portion processing apparatus that removes the object to be removed in a predetermined processing range on the inner peripheral side from the outer peripheral edge of the back surface of the substrate and does not remove the target to be removed on the inner peripheral side from the predetermined processing range. Back surface peripheral edge processing step for processing,
Have
Provide a superimposition processing range where the processing range in the back surface processing step and the processing range in the back edge processing step overlap ,
After the back surface processing step, the substrate is reversed by a substrate reversing device and then the back surface peripheral portion processing step is performed, or after the back surface peripheral portion processing step, the substrate is reversed by the substrate reversing device and then the back surface processing step is performed. computer-readable storage medium storing a substrate processing program and performs.
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