TW201934210A - Substrate processing device and substrate processing method - Google Patents

Abstract

An object of the invention is to vigorously clean a substrate. A substrate processing device according to an embodiment of the invention comprises a holding section, a first cleaning body, a first movement mechanism, a second cleaning body, a second cleaning mechanism, and a control section. The holding section holds a substrate. The first cleaning body cleans one or other of the top surface and the bottom surface of the substrate held by the holding section, by discharging fluid onto the surface or by contact with the surface. The first movement mechanism moves the first cleaning body horizontally. The second cleaning body cleans the other of the top surface or bottom surface of the substrate held by the holding section by contact with the other surface. The second movement mechanism moves the second cleaning body horizontally. The control section controls the first movement mechanism and the second mechanism, so as to perform cleaning processing of both surfaces by synchronizing the horizontal movement of the first cleaning body, which discharges fluid onto or contacts one of the surfaces, with the horizontal movement of the second cleaning body which contacts the other surface.

Description

Substrate processing device and substrate processing method

Embodiments disclosed in the present invention relate to a substrate processing apparatus and a substrate processing method.

Conventionally, a substrate processing apparatus that physically cleans a substrate with a brush, a sponge, or the like has been known. For example, Patent Document 1 discloses a substrate processing apparatus including a brush for cleaning the top surface of a substrate.
[Prior technical literature]
[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2010-109225

[Problems to be solved by the invention]

However, in the conventional technology, the brush is pressed against the substrate, and the substrate is bent in a direction avoiding the brush, so it is difficult to apply a strong force to the substrate. Therefore, in the conventional technology, it is difficult to thoroughly clean the substrate.

One aspect of the present invention is to provide a substrate processing apparatus and a substrate processing method capable of thoroughly cleaning a substrate.
[Means to solve the problem]

A substrate processing apparatus according to an aspect of the present invention includes a holding unit, a first cleaning body, a first moving mechanism, a second cleaning body, a second moving mechanism, and a control unit. The holding portion holds the substrate. The first cleaning body sprays fluid on one surface of the top surface and the bottom surface of the substrate held by the holding portion or contacts the surface of the one surface to clean the surface of the one surface. The first moving mechanism moves the first washing body horizontally. The second cleaning body is in contact with the other surface of the top surface and the bottom surface of the substrate held by the holding portion to clean the other surface. The second moving mechanism moves the second washing body horizontally. The control unit controls the first moving mechanism and the second moving mechanism to discharge fluid on one surface or the first cleaning body in contact with the surface on the one side and the second cleaning body in contact with the surface on the other Simultaneously move horizontally for two-sided cleaning.
[Effect of the invention]

According to one embodiment of the present invention, the substrate can be thoroughly cleaned.

Hereinafter, aspects of the substrate processing apparatus and substrate processing method (hereinafter referred to as "implementation aspect") for implementing the present invention will be described in detail with reference to the drawings. In addition, the substrate processing apparatus and substrate processing method in this case are not limited by these implementation aspects. In addition, the respective implementation aspects can be appropriately combined within a range where the processing contents are not contradictory. In addition, in the following embodiments, the same parts are denoted by the same reference numerals, and repeated descriptions thereof are omitted.

(First embodiment)
First, the structure of the substrate processing apparatus according to the first embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing a structure of a substrate processing apparatus according to a first embodiment. In addition, FIG. 2 is a longitudinal sectional view showing the structure of the substrate processing apparatus according to the first embodiment. Hereinafter, in order to make the positional relationship clear, the X-axis, Y-axis, and Z-axis orthogonal to each other are defined, and the positive direction of the Z-axis is the vertical upward direction.

The substrate processing apparatus 1 includes two adsorption pads 10 that horizontally adsorb and hold a bottom surface of a substrate such as a semiconductor wafer or a glass substrate (hereinafter referred to as a wafer W); and horizontally adsorbs and holds the received from the adsorption pad 10 The rotating chuck 11 of the bottom surface of the wafer W; the frame 13 with the top surface open; the first cleaning unit 17 that performs the cleaning process of the top surface of the wafer W; and the cleaning process of the bottom surface of the wafer W的 第二 洗 部 18。 The second washing section 18.

A circuit is formed on at least one of the top surface and the bottom surface of the wafer W. Here, a circuit is formed on the top surface of the wafer W.

As shown in FIG. 1, the two suction pads 10 are roughly formed into an elongated rectangular shape, and are arranged to be substantially parallel with the rotation chuck 11 sandwiched in a plan view so as to hold the peripheral edge portion of the bottom surface of the wafer W. Each adsorption pad 10 is supported by a substantially rectangular support plate 14 that is longer than the adsorption pad 10. Both ends of the support plate 14 are moved by a frame 15 arbitrarily moved in a horizontal direction (X-axis direction in FIG. 1) and an up-down direction (Z-axis direction in FIG. 1) by a driving mechanism (not shown). stand by.

An upper cup 16 is provided on the top surface of the frame 15. An opening having a diameter larger than the diameter of the wafer W is formed on the top surface of the upper cup 16, and a crystal is carried out between the transport mechanism provided outside the substrate processing apparatus 1 and the suction pad 10 through the opening. Circle W passing.

As shown in FIG. 2, the chuck 11 is rotated and connected to the driving mechanism 21 through the shaft portion 20. The rotary chuck 11 is arbitrarily rotated and moved up and down by a drive mechanism 21.

Around the rotary chuck 11, for example, three lifting pins 22 are arbitrarily raised and lowered by a lifting mechanism (not shown). Thereby, the wafer W can be transferred between the lift pin 22 and a transfer mechanism (not shown) provided outside the substrate processing apparatus 1.

A drain pipe 40 for discharging the cleaning liquid and an exhaust pipe 41 for forming a downward airflow in the substrate processing apparatus 1 and discharging the airflow are provided at the bottom of the housing 13.

Next, the structures of the first washing section 17 and the second washing section 18 will be described. As shown in FIG. 2, the first cleaning unit 17 includes a first cleaning body 171, a first pillar member 172, and a first driving unit 173.

The first cleaning body 171 is a member that presses against the top surface of the wafer W. The first cleaning body 171 is, for example, a brush composed of a plurality of bristles. The bottom surface of the first cleaning body 171, that is, the contact surface with the wafer W, has a circular shape smaller than the top surface of the wafer W, for example. The first cleaning body 171 may be a sponge.

A first pillar member 172 is provided on the top surface of the first cleaning body 171. The first pillar member 172 extends in the vertical direction (Z-axis direction) and supports the first cleaning body 171 at one end.

A first driving portion 173 is provided on the other end portion of the first pillar member 172. The first driving unit 173 rotates the first pillar member 172 about a vertical axis. Thereby, the first washing body 171 supported by the first pillar member 172 can be rotated around the vertical axis.

The first washing section 17 is supported horizontally by the arm section 70. In the arm portion 70, a cleaning nozzle 70 a that supplies a cleaning fluid to the top surface of the wafer W held by the spin chuck 11 is provided adjacent to the first cleaning portion 17. As the washing fluid, for example, pure water can be used.

The arm portion 70 is provided with a load detection portion 75 that detects a pressing force of the first cleaning body 171 against the wafer W. The load detection unit 75 is, for example, a load cell.

The arm portion 70 is connected to the moving portion 71. The moving section 71 moves the arm section 70 horizontally along a rail 72 extending in a horizontal direction (here, the X-axis direction). In addition, the moving portion 71 raises and lowers the arm portion 70 in the vertical direction (Z-axis direction).

The second cleaning section 18 includes a second cleaning body 181, a second pillar member 182, and a second driving section 183.

The second cleaning body 181 is a member that presses against the bottom surface of the wafer W. The second cleaning body 181 is, for example, a brush composed of a plurality of bristles. The top surface of the second cleaning body 181, that is, the contact surface with the wafer W, for example, has a smaller circular shape than the top surface of the wafer W. The second cleaning body 181 may be a sponge.

A second pillar member 182 is provided on the bottom surface of the second cleaning body 181. The second pillar member 182 extends in the vertical direction (Z-axis direction) and supports the second cleaning body 181 at one end.

A second driving portion 183 is provided on the other end portion of the second pillar member 182. The second driving unit 183 rotates the second pillar member 182 about a vertical axis. Thereby, the second washing body 181 supported by the second pillar member 182 can be rotated around the vertical axis.

The second washing section 18 is horizontally supported by the arm section 80. A cleaning nozzle 80 a for supplying a cleaning fluid to the bottom surface of the wafer W held by the suction pad 10 or the spin chuck 11 is provided at the arm portion 80 adjacent to the second cleaning body 181. As the washing fluid, for example, pure water can be used.

The arm portion 80 is connected to the moving portion 81. The moving portion 81 moves the arm portion 80 horizontally along a rail 82 extending in the horizontal direction (here, the Y-axis direction). In addition, the moving portion 81 raises and lowers the arm portion 80 in the vertical direction (Z-axis direction).

The arm portion 80 is extended and contracted in a horizontal direction (X-axis direction) by, for example, a driving portion (not shown). Thereby, the arm part 80 can move the 2nd washing part 18 and the washing nozzle 80a along an X-axis direction (namely, the same direction as the moving direction of the 1st washing part 17).

The arm portion 80 is provided with a load detection portion 85 that detects a pressing force of the second cleaning body 181 against the wafer W. The load detection unit 85 is, for example, a load cell.

In the substrate processing apparatus 1 described above, a control unit 200 is provided as shown in FIG. 1. The control unit 200 is, for example, a computer, and has a program storage unit (not shown). In the program storage section, a program that controls the processing of the wafer W in the substrate processing apparatus 1 is stored. In addition, the program storage section also stores programs for controlling the operations of the above-mentioned various driving devices, mobile devices, and other driving systems or various nozzles to realize the cleaning processing in the substrate processing apparatus 1. In addition, the above program may be recorded on a computer-readable storage medium such as a hard disk (HD), a floppy disk (FD), an optical disk (CD), a magneto-optical disk (MO), a memory card, or the like. It is mounted on the control unit 200 from this storage medium H.

Next, a cleaning process of the wafer W in the substrate processing apparatus 1 will be described. FIG. 3 is a flowchart showing a sequence of a series of cleaning processes by the substrate processing apparatus 1. In addition, FIGS. 4 and 5 are diagrams showing an example of the operation of the carry-in process, and FIGS. 6 to 8 are diagrams showing an example of the operation of the bottom surface washing process, and FIG. 9 to FIG. A diagram of an example of the operation.

As shown in FIG. 3, in the substrate processing apparatus 1, first, a carry-in process is performed (step S101). In the carrying-in process, as shown in FIG. 4, the wafer W is carried onto the upper cup 16 by a carrying mechanism 90 provided outside the substrate processing apparatus 1. Then, the lift pin 22 is raised, and the wafer W is transferred to the lift pin 22. At this time, the top surface of the suction pad 10 stands by at a position higher than the top surface of the second cleaning body 181, and the top surface of the rotary chuck 11 retracts to a position lower than the top surface of the second cleaning body 181. . Thereafter, the lift pin 22 is lowered, and as shown in FIG. 5, the wafer W is transferred to the suction pad 10 and is held by suction.

Next, a bottom surface washing process is performed (step S102). In the bottom surface cleaning process, first, as shown in FIG. 6, the suction pad 10 holding the wafer W is moved in the horizontal direction (here, the X-axis direction) together with the support plate 14 and the upper cup 16. As a result, a state in which the rotary chuck 11 is disposed near the outer peripheral portion of the wafer W and the second cleaning portion 18 is disposed near the center portion of the wafer W is formed.

Next, as shown in FIG. 7, for example, the second cleaning part 18 is raised by the moving part 81 (see FIG. 2) to press the second cleaning body 181 against the bottom surface of the wafer W. At this time, the moving unit 81 raises the second cleaning unit 18 so that the pressing force of the second cleaning body 181 against the wafer W becomes a value that we desire. The distance for raising the second washing unit 18 can be determined based on the detection result of the load detection unit 85, for example. Here, the second cleaning unit 18 is raised, but the suction pad 10 may be lowered to press the bottom surface of the wafer W against the second cleaning body 181. It is also possible to raise the second washing portion 18 and lower the suction pad 10 at the same time.

Thereafter, the supply of pure water to the bottom surface of the wafer W from the cleaning nozzle 80a (see FIG. 1) is started. In addition, rotation of the second cleaning body 181 is started.

The cleaning of the bottom surface of the wafer W by the second cleaning unit 18 is performed using a combination of the movement of the wafer W by the suction pad 10 and the movement of the second cleaning unit 18 by the moving unit 81. For example, as shown in FIG. 8, the portion between the two adsorption pads 10 is moved back and forth along the Y-axis direction with respect to the second cleaning body 181, and the seasonal adsorption is switched when the moving direction of the second cleaning body 181 is switched. The pad 10 moves in the negative direction of the X-axis by a distance equal to or smaller than the diameter of the second cleaning body 181. Thereby, the central area A of the wafer W including the area sucked and held by the spin chuck 11 is cleaned by the second cleaning body 181. Thereafter, the rotation of the second cleaning body 181 is stopped, and the supply of pure water from the cleaning nozzle 80a is stopped.

Next, a double-sided washing process is performed (step S103). In the double-sided cleaning process, first, as shown in FIG. 9, the adsorption pad 10 is moved so that the central portion of the wafer W is above the spin chuck 11, and then the adsorption of the wafer W by the adsorption pad 10 is released. And raise the spin chuck 11 to transfer the wafer W from the suction pad 10 to the spin chuck 11.

In addition, as shown in FIG. 10, the first cleaning section 17 is positioned above the center of the wafer W by the moving section 71 (see FIG. 2), and thereafter, the first cleaning section 17 is lowered to move the first cleaning body. 171 is pressed against the top surface of the wafer W. At this time, the moving unit 71 is configured such that the pressing force of the first cleaning body 171 against the wafer W is a value desired by us, specifically, the pressing force of the moving body 71 with the second cleaning body 181 against the wafer W is With the same value, the first washing unit 17 is lowered. The distance for lowering the first washing unit 17 can be determined based on the detection result of the load detection unit 75, for example.

Here, the pressure control is performed for both the first cleaning unit 17 and the second cleaning unit 18 based on the detection results of the load detection units 75 and 85 so that the abutting pressure on the wafer W becomes the value we expect. However, for one of the first washing unit 17 and the second washing unit 18, pressure control may not be performed, but position control may be implemented to maintain a state of being arranged at a predetermined height position. For example, it is also possible to maintain the state where the first cleaning body 171 is disposed at a predetermined height position for the first cleaning section 17 and to set the pressing force of the second cleaning section 18 to the wafer W to a value that we expect. The method adjusts the height position of the second washing unit 18 based on the detection result of the load detection unit 85. Thereby, the top surface and the bottom surface of the wafer W can be cleaned with the same abutment pressure only by the pressure control of one of the first and a second washer portions 17 and 18, so that the abutment pressure can be adjusted. It becomes easier.

Next, as shown in FIG. 11, the rotation chuck 11 is rotated by the driving mechanism 21, thereby rotating the wafer W. In addition, the supply of pure water to the top surface of the wafer W from the cleaning nozzle 70a is started, and the rotation of the first cleaning body 171 is started at the same time. Then, the first cleaning body 171 is moved in the horizontal direction (positive direction of the X axis) by the moving section 71. Thereby, the center area of the top surface of the wafer W is cleaned by the first cleaning body 171. Alternatively, after the wafer W and the first cleaning body 171 are rotated, the first cleaning body 171 may be pressed against the wafer W.

The second cleaning body 181 is a member that stops at a position shifted from the center of the wafer W in the direction along the rail 72 (see FIG. 1). That is, the second cleaning body 181 is disposed at a position overlapping with the advancing path of the first cleaning body 171 in a plan view.

Next, as shown in FIG. 12, when the first cleaning body 171 reaches a position where the first cleaning body 171 and the second cleaning body 181 overlap in a plan view, the cleaning is started from the cleaning nozzle 80 a (see FIG. 1). The bottom surface of the wafer W is supplied with pure water, and at the same time, the second cleaning body 181 starts to rotate. Then, as shown in FIG. 13, the first washing body 171 and the second washing body 181 are overlapped with each other in a plan view, and the first washing body 171 and the second washing body 181 are caused to crystallize. The outer periphery of the circle W moves horizontally in the same direction (positive X-axis direction) at the same speed. That is, the first washing body 171 and the second washing body 181 are moved horizontally in synchronization with each other.

While the first cleaning body 171 and the second cleaning body 181 move horizontally in synchronization, the pressing force of the first cleaning body 171 against the wafer W is adjusted to be equal to that of the second cleaning body 181 against the wafer W. The pressure is the same. Therefore, it is possible to prevent the wafer W from being bent downward by being pressed by the first cleaning body 171 or from being bent upward by being pushed by the second cleaning body 181.

When the first cleaning body 171 and the second cleaning body 181 reach the outer peripheral portion of the wafer W, the first cleaning body 171 and the second cleaning body 181 are stopped from rotating, and the cleaning nozzles 70a and 80a are stopped. Supply pure water. Then, the first cleaning body 171 and the second cleaning body 181 are separated from the wafer W.

The timing of stopping the supply of pure water from the washing nozzle 70a is preferably after stopping the supply of pure water from the washing nozzle 80a. Thereby, pure water can be suppressed from flowing around from the bottom surface of the wafer W to the circuit formation surface (that is, the top surface of the wafer W). However, the present invention is not limited to these aspects, and the supply of pure water from the cleaning nozzles 70a and 80a may be stopped at the same time.

Next, a drying process is performed (step S104). In the drying process, the rotary chuck 11 is rotated at a high speed, and the pure water adhering to the wafer W is thrown away, thereby drying the wafer W.

Thereafter, a carry-out process is performed (step S105). In the unloading process, the wafer W is transferred to the transfer mechanism 90 in the reverse order of the loading process (step S101). As a result, a series of cleaning processes for one wafer W is completed.

As described above, the substrate processing apparatus 1 of the first embodiment implements "the first cleaning unit 17 and the second cleaning unit 18 are moved horizontally in synchronization to simultaneously clean both the top and bottom surfaces of the wafer W" Wash both sides.

As a result, the wafer W can be cleaned with a stronger pressing force than when the top surface of the wafer W and the bottom surface of the wafer W are separately cleaned. This point will be described with reference to FIGS. 14 and 15. FIG. 14 is a diagram showing an example when only the bottom surface of the wafer W is cleaned, and FIG. 15 is a diagram showing an example when both surfaces of the wafer W are simultaneously cleaned.

As shown in FIG. 14, for example, when only the bottom surface of the wafer W is cleaned by the second cleaning unit 18, the second cleaning body 181 is pressed against the wafer W, which may cause the wafer W to leave the first surface. Since the direction of the cleaning body 181 is curved, it is difficult to apply a strong force to the wafer W. This also applies to the case where the top surface of the wafer W is cleaned only by the first cleaning body 171.

In addition, when only the bottom surface of the wafer W is cleaned by the second cleaning unit 18, the second cleaning body 181 is pressed against the wafer W, and an upward force is applied to the wafer W. Therefore, the wafer W may be It will come off from the rotating chuck 11. Therefore, the abutting pressure of the second cleaning body 181 is restricted by the suction force of the rotary chuck 11. That is, it is limited to an abutment pressure to such an extent that the wafer W does not fall off from the spin chuck 11. For these reasons, it is particularly difficult to thoroughly clean the bottom surface of the wafer W.

In contrast, in the substrate processing apparatus 1 according to the first embodiment, the wafer W is sandwiched between the first cleaning unit 17 and the second cleaning unit 18, and the wafer is pushed from above and below. W. Thereby, the force by which the first washing unit 17 presses the wafer W and the force by which the second washing unit 18 pushes the wafer W can be cancelled out. Therefore, the wafer W is not warped, and it is not restricted by the suction force of the spin chuck 11, and the abutment pressure of the first cleaning section 17 and the second cleaning section 18 can be set to be relatively high. For example, the first cleaning body 171 is determined by a force that is allowed to be applied to the top surface of the wafer W (for example, a pressure that does not excessively remove the film layer) or a force that can effectively clean the top surface of the wafer W. The total of the abutment pressure of the wafer W and the abutment pressure of the bottom surface of the wafer W can be used to thoroughly clean the bottom surface of the wafer W by a stronger abutting pressure than that determined by considering the restriction of the adsorption force of the spin chuck 11.

As described above, according to the substrate processing apparatus 1 according to the first embodiment, the wafer W can be more thoroughly cleaned than when the one surface of the wafer W is cleaned with only a single cleaning body.

In addition, according to the substrate processing apparatus 1 according to the first embodiment, by cleaning the top surface and the bottom surface of the wafer W at the same time, as compared with, for example, cleaning the surface of one side of the wafer W with the flip mechanism, By turning the front and back surfaces of the circle W and then cleaning the other surface, the time required to clean both sides of the wafer W can be further shortened.

In the substrate processing apparatus 1 according to the first embodiment, for example, when the first cleaning body 171 and the second cleaning body 181 are completely overlapped in a plan view, specifically, the first cleaning body 171 is When the rotation center is aligned with the rotation center of the second cleaning body 181 in a plan view, the second cleaning body 181 and the first cleaning body 171 are moved horizontally in synchronization. This makes it possible to move the first washing body 171 and the second washing body 181 horizontally in a state where the rotation center of the first washing body 171 and the rotation center of the second washing body 181 are staggered. The warpage of the wafer W is more reliably suppressed.

When the first cleaning body 171 is shifted toward the center side of the wafer W, the force received by the first cleaning body 171 is lower than when the position of the first cleaning body 171 is not shifted, and it is shifted toward the outer peripheral side. When shifted, it is higher than when the position of the first cleaning body 171 is not shifted. Therefore, the control unit 200 may detect the positional deviation of the first cleaning body 171 based on the detection result of the load detection unit 75 (see FIG. 2). The same applies to the second cleaning body 181. The control unit 200 can detect a positional deviation of the second cleaning body 181 based on the detection result of the load detection unit 85.

The size of the contact surface between the first cleaning body 171 and the wafer W may be the same as or different from the size of the contact surface between the second cleaning body 181 and the wafer W. For example, we sometimes expect that the circuit formation surface of the wafer W is more gently cleaned than the non-circuit formation surface. At this time, the size of the contact surface of the first cleaning body 171 that can clean the circuit formation surface (ie, the top surface) of the wafer W can be made larger than the size of the contact surface of the second cleaning body 181. By increasing the size of the contact surface, even when the first cleaning body 171 and the second cleaning body 181 are pressed against the wafer W with the same force, it is possible to make the The force per unit area is smaller than the force per unit area applied to the bottom surface. Therefore, the top surface of the wafer W can be cleaned more gently than the bottom surface. In addition, the size of the contact surface of the second cleaning body 181 for cleaning the bottom surface of the wafer W may be made larger than the size of the contact surface of the first cleaning body 171. By increasing the size of the contact surface, the object surface can be washed in a shorter time. In addition, by increasing the size of the contact surface, the cleaning target portion of the wafer W can be cleaned with a smaller amount of movement, so that the driving unit (for example, the rails 72 and 82) can be miniaturized. Therefore, the substrate processing apparatus 1 can be miniaturized.

In addition, when the circuit formation surface of the wafer W is to be gently cleaned, a material that is softer than the second cleaning body 181 may be used to form the first surface of the circuit formation surface (that is, the top surface) of the cleaned wafer W.洗 体 171. By forming the first cleaning body 171 with a soft material, the circuit forming surface is less likely to be damaged. Therefore, the top surface of the wafer W can be cleaned more gently than the bottom surface.

Here, when the first washing body 171 and the second washing body 181 completely overlap each other in a plan view, in other words, between the rotation center of the first washing body 171 and the rotation center of the second washing body 181. When aligned in a plan view, the second cleaning body 181 and the first cleaning body 171 are moved in synchronization with each other. However, the timing for starting the synchronization of the first washing body 171 and the second washing body 181 is not limited to the example described above. This point will be described with reference to FIGS. 16 and 17. FIG. 16 and FIG. 17 are diagrams showing another example of a timing for starting synchronization of the first washing body 171 and the second washing body 181.

In the above example, the first cleaning body 171 moves along the positive direction of the X axis, and the rotation center R1 of the first cleaning body 171 and the rotation center R2 of the second cleaning body 181 are aligned in a plan view. At that time, the second washing body 181 and the first washing body 171 are moved in synchronization with each other. However, the synchronization between the first cleaning body 171 and the second cleaning body 181 requires that the contact surface between the first cleaning body 171 and the wafer W and the contact surface between the second cleaning body 181 and the wafer W be viewed from above. You can start within the repeating period.

Therefore, for example, as shown in FIG. 16, a part of the contact surface of the first cleaning body 171 and a part of the contact surface of the second cleaning body 181 may be moved to each other in the X-axis direction of the first cleaning body 171. After overlapping, before the rotation center R1 of the first cleaning body 171 and the rotation center R2 of the second cleaning body 181 are aligned in plan view, the second cleaning body 181 and the first cleaning body 171 are moved in synchronization. As shown in FIG. 17, as long as the contact surface of the first cleaning body 171 and the contact surface of the second cleaning body 181 overlap each other, the rotation center R1 of the first cleaning body 171 and the first After the rotation centers R2 of the two washing bodies 181 are aligned in a plan view, the second washing body 181 and the first washing body 171 are moved in synchronization with each other.

The contact surface of the second cleaning body 181 does not necessarily have to overlap the contact surface of the first cleaning body 171 in a plan view. This point will be described with reference to FIG. 18. FIG. 18 is a diagram showing another example of positions where the second cleaning body 181 and the first cleaning body 171 overlap.

As shown in FIG. 18, "the area where the first cleaning body 171 is in contact with the top surface of the wafer W (hereinafter referred to as the contact area B) and The method of maintaining the contact surface between the second cleaning body 181 and the wafer W in a state repeated in the plan view "causes the second cleaning body 181 to move horizontally in synchronization with the first cleaning body 171. Even in these cases, the power of the first cleaning unit 17 to press the wafer W down can be used to weaken the power of the second cleaning unit 18 to push the wafer W up. Therefore, the wafer W is not bent, and further, the pressing force of the second cleaning unit 18 can be set to be relatively high without being restricted by the suction force of the spin chuck 11.

An example of the double-sided washing process in this aspect will be described with reference to FIGS. 19 to 21. 19 to 21 are diagrams showing another operation example of the double-sided washing process.

For example, as shown in FIG. 19, the 1st cleaning body 171 is made to contact the top surface of the edge part of the X-axis positive direction side of the wafer W, and the 2nd cleaning body 181 is made to be positive to the X-axis of the wafer W The bottom surface of the end portion on the direction side is in contact. Next, the first cleaning body 171 and the second cleaning body 181 are rotated, and the ends of the first cleaning body 171 and the second cleaning body 181 toward the negative side of the X axis of the wafer W are along the X axis. The negative direction moves at the same speed. Thereby, the second cleaning body 181 moves while maintaining a state overlapping with the contact area B in a plan view.

Next, as shown in FIG. 20, the movement and rotation of the second cleaning body 181 are stopped at a position before the rotation chuck 11 is interfered with. On the other hand, the first cleaning body 171 is continued to move. Thereby, the synchronization between the first washing body 171 and the second washing body 181 is released.

Next, as shown in FIG. 21, the first cleaning body 171 is further moved toward the negative side of the X axis, and when the second cleaning body 181 and the contact area B are repeated again in a plan view, the second cleaning body is caused 181 rotates, and moves the 2nd washing body 181 in the direction opposite to the 1st washing body 171 at the same speed as the 1st washing body 171. Thereby, the second cleaning body 181 moves again while maintaining a state overlapping with the contact area B in a plan view. After that, when the first cleaning body 171 reaches the end portion on the X-axis negative side of the wafer W, and the second cleaning body 181 reaches the end portion on the X-axis positive side of the wafer W, the first cleaning is stopped. The rotation of the body 171 and the second cleaning body 181 completes the double-sided washing process.

As described above, the substrate processing apparatus 1 according to the first embodiment includes the rotary chuck 11 (an example of a holding portion), the first cleaning body 171, the arm portion 70, the moving portion 71, and the rail 72 (first movement An example of a mechanism), a second cleaning body 181, an arm portion 80, a moving portion 81, and a rail 82 (an example of a second moving mechanism), and a control portion 200. The chuck 11 is rotated to hold the wafer W (an example of a substrate). The first cleaning body 171 contacts the top surface of the wafer W held by the spin chuck 11 and cleans the top surface of the wafer W. The arm portion 70, the moving portion 71, and the rail 72 move the first cleaning body 171 horizontally. The second cleaning body 181 contacts the bottom surface of the wafer W held by the spin chuck 11 and cleans the bottom surface of the wafer W. The arm part 80, the moving part 81, and the rail 82 move the second washing body 181 horizontally. The control unit 200 controls the moving unit 71 and the arm unit 80 to perform horizontal movement of the first cleaning body 171 in contact with the top surface of the wafer W and the second cleaning body 181 in contact with the bottom surface of the wafer W in synchronization with each other. Wash and process.

For example, the control unit 200 maintains the contact surface between the first cleaning body 171 and the top surface of the wafer W and the second cleaning body in a plan view of the wafer W held by the spin chuck 11 from the thickness direction. In a state where the contact surfaces of 181 and the bottom surface of the wafer W overlap, the process of horizontally moving the first cleaning body 171 and the second cleaning body 181 is performed as a double-side cleaning process.

With this, for example, the force by which the first cleaning unit 17 pushes down the wafer W and the force by which the second cleaning unit 18 pushes up the wafer W can be canceled out, so that the wafer W is not bent, and Without being restricted by the suction force of the spin chuck 11, the abutting pressure of the first cleaning body 171 and the second cleaning portion 18 can be set to be relatively high. Therefore, according to the substrate processing apparatus 1 according to the first embodiment, the wafer W can be thoroughly cleaned by the first cleaning body 171 and the second cleaning body 181.

The substrate processing apparatus 1 further includes a first driving unit 173 that rotates the first cleaning body 171 around the vertical axis, a second driving unit 183 that rotates the second cleaning body 181 around the vertical axis, and a control unit 200. In the state where the rotation center of the first cleaning body 171 formed by the first driving portion 173 and the rotation center of the second cleaning body 181 formed by the second driving portion 183 are aligned, the first The process of horizontally moving the cleaning body 171 and the second cleaning body 181 is performed as a double-sided cleaning process. Thereby, compared with the state where the rotation center of the 1st cleaning body 171 and the rotation center of the 2nd cleaning body 181 are staggered, the curvature of the wafer W can be suppressed more reliably.

In addition, in the double-side cleaning process, the control unit 200 uses the same pressing force of the first cleaning body 171 against the top surface of the wafer W and the second cleaning body 181 against the bottom surface of the wafer W. In a mode, at least one of the moving unit 71 or the moving unit 81 is controlled, and the height position of at least one of the first washing body 171 and the second washing body 181 is adjusted. In this way, by making the pressing force of the first cleaning body 171 on the top surface of the wafer W the same as that of the second cleaning body 181 on the bottom surface of the wafer W, it is possible to suppress, for example, because the first When the abutment pressure of the cleaning body 171 exceeds the abutment pressure of the second cleaning body 181 and the wafer W is bent downward, or because the abutment pressure of the second cleaning body 181 exceeds the abutment pressure of the first cleaning body 171 When the wafer W is bent upward.

The substrate processing apparatus 1 further includes load detection units 75 and 85 that detect the pressing force of the first cleaning body 171 against the top surface of the wafer W or the pressing force of the second cleaning body 181 against the bottom surface of the wafer W. Then, the control unit 200 arranges one of the first cleaning body 171 and the second cleaning body 181 at a predetermined height position, and adjusts the first cleaning body 171 and the first cleaning body 171 and Height position of the other of the second cleaning body 181. This makes it easier to adjust the resistance.

(Second embodiment)
In the first embodiment described above, the bottom surface washing process (step S102) and the two-side washing process (step S103) are performed while the height of the upper cup 16 is fixed. However, the bottom surface washing process may be performed The height of the upper cup 16 was changed during the cleaning process and the double-sided cleaning process. These aspects will be described with reference to FIGS. 22 and 23. FIG. 22 is a diagram showing the height position of the upper cup 16 in the bottom surface washing process, and FIG. 23 is a diagram showing the height position of the upper cup 16 in the double side washing process.

For example, as shown in FIG. 22, the substrate processing apparatus 1A according to the second embodiment includes an elevating mechanism 45 that is independent of the upper cup 16 and that raises and lowers the support plate 14. The elevating mechanism 45 includes, for example, a pillar member 46 that supports the support plate 14 and a driving unit 47 that raises and lowers the pillar member 46.

In the substrate processing apparatus 1A, during the bottom surface cleaning process, the support plate 14 is raised by the lifting mechanism 45 to set the height position of the upper cup 16 to H1. The height position of the upper cup 16 refers to the height position of the upper cup 16 when the top surface of the wafer W sucked and held by the suction pad 10 or the spin chuck 11 is used as a reference. The height position H1 is a position at which pure water or the like can be prevented from flowing around from the bottom surface to the top surface of the wafer W.

Next, in the substrate processing apparatus 1A, after the height position of the upper cup 16 is set to H2 higher than H1, a double-sided cleaning process is performed. That is, after the height position of the upper cup 16 is changed to H2, the supply of pure water from the cleaning nozzle 70a to the top surface of the wafer W is started. The height position H2 is a height position capable of suppressing splashing of pure water or the like splashed from the rotating first washing body 171 to the outside of the upper cup 16. The height position of the upper cup 16 can be changed, for example, by adjusting the height position of the rotary chuck 11.

As described above, the substrate processing apparatus 1A may change the height position of the upper cup 16 based on the wafer W when performing the bottom surface cleaning process and when performing the double surface cleaning process. Thereby, for example, pure water or the like can be prevented from flowing around to the top surface of the wafer W during the bottom surface cleaning process, or pure water or the like can be splashed out of the upper cup 16 during the two-side cleaning process.

(Third embodiment)
In each of the above-mentioned embodiments, the example in which the substrate processing apparatuses 1 and 1A are provided with the first cleaning section 17 and the second cleaning section 18 as cleaning tools will be described, but other cleaning methods may be provided. Net tools. This point will be described with reference to FIG. 24. FIG. 24 is a view showing an example of another cleaning tool.

As shown in FIG. 24, the substrate processing apparatus 1B according to the third embodiment may include, in addition to the first cleaning section 17 and the second cleaning section 18, for example, a cleaning body using a brush, a sponge, or the like. The third cleaning section 30 that cleans the end of the wafer W, the fourth cleaning section 31 that supplies the cleaning fluid to the bottom surface of the wafer W, and the third cleaning section 31 that supplies the cleaning fluid to the top surface of the wafer W. 5 Washing section 32 and so on. The substrate processing apparatus 1B can select and use an optimal tool from among the plurality of cleaning tools in accordance with the type of the target wafer W.

For example, in the bottom surface cleaning process, the bottom surface of the wafer W may be cleaned by the fourth cleaning unit 31 in addition to the second cleaning unit 18. In addition, in the double-side cleaning process, the top surface of the wafer W may be cleaned by the fifth cleaning unit 32 in addition to the first cleaning unit 17. In this way, the washing time can be shortened by simultaneously washing with a plurality of washing tools. In addition, for example, the fourth washing unit 31 or the fifth washing unit 32 can effectively remove impurities and the like that appear due to the first washing body 171 or the second washing body 181. Alternatively, after the two-side washing process is completed, the washing process may be performed by the fourth washing unit 31 and the fifth washing unit 32, and the drying process may be performed thereafter.

The fourth washing section 31 and the fifth washing section 32 are, for example, two-fluid nozzles. The fourth cleaning section 31 and the fifth cleaning section 32, which are two-fluid nozzles, atomize the cleaning liquid and spray it onto the wafer W. The fourth cleaning section 31 and the fifth cleaning section 32 are not limited to two-fluid nozzles, and may be ordinary nozzles that discharge the cleaning liquid.

The substrate processing apparatus 1B may include a plurality of first cleaning sections 17 each having a different removal performance. For example, when high removal performance is required, the first cleaning portion 17 having the first cleaning body 171 having high removal ability may be used. When the top surface is to be cleaned in a manner that does not cause damage as much as possible, A first washing section 17 having a soft first washing body 171 is used. Similarly, the substrate processing apparatus 1B may include a plurality of second cleaning units 18 having different removal performances.

As described above, the substrate processing apparatus 1B may include cleaning tools other than the first cleaning section 17 and the second cleaning section 18.

(Fourth embodiment)
In the above embodiment, the first cleaning body 171 and the second cleaning body 181 are synchronized in the two-side cleaning process to simultaneously clean both sides of the wafer W, but the second cleaning body 181 is synchronized The cleaning tool is not limited to the first cleaning body 171. This point will be described with reference to FIG. 25. FIG. 25 is a diagram showing an operation example of the double-sided washing process in the fourth embodiment.

As shown in FIG. 25, the substrate processing apparatus 1C according to the fourth embodiment includes, for example, a second cleaning section 18 and a fifth cleaning section 32 as a cleaning tool. The fifth washing section 32 is a two-fluid nozzle.

In the substrate processing apparatus 1C according to the fourth embodiment, the second cleaning unit 18 and the fifth cleaning unit 32 are synchronized to perform a double-sided cleaning process. Specifically, it is the same as that in which the first washing body 171 and the second washing body 181 are synchronized. As shown in FIG. 25, when the fifth washing section 32 reaches the ejection position of the fifth washing section 32 and When the contact surface of the second cleaning body 181 repeats in a plan view, the second cleaning body 181 is rotated, and at the same time, the second cleaning body 181 is rotated in the same direction (positive X-axis direction) at the same speed as the fifth cleaning section 32. Move horizontally.

According to the substrate processing apparatus 1C according to the fourth embodiment, the power of the mist cleaning liquid supplied by the fifth cleaning unit 32 to press down the wafer W can be weakened, and the second cleaning unit 18 can weaken the wafer W. Push up power. Therefore, the wafer W is not bent, and it is not restricted by the suction force of the spin chuck 11, and the abutting pressure of the second cleaning unit 18 can be set to be relatively high. In addition, in the two-side washing process using the second washing part 18 and the fifth washing part 32, it is also preferable to set the height position of the upper cup 16 to a position higher than the height position H1 during the bottom surface washing process. . Thereby, it is possible to suppress the atomized cleaning liquid supplied from the fifth cleaning unit 32 from splashing out of the upper cup 16.

(Fifth embodiment)
In the fifth embodiment, a process of cleaning both cleaning tools by a cleaning tool that cleans the top surface of the wafer W and a cleaning tool that cleans the bottom surface of the wafer W will be described with reference to FIG. 26. FIG. 26 is a diagram showing an operation example of the tool cleaning process.

For example, as shown in FIG. 26, the substrate processing apparatus 1D according to the fifth embodiment includes a first cleaning unit 17 and a second cleaning unit 18. When the substrate processing apparatus 1D does not suck and hold the wafer W on the suction pad 10 and the spin chuck 11, for example, after the carrying-out process (step S105), the carrying-in process of the next wafer W is carried out (step S101) Prior to this, a tool washing process is performed.

Specifically, the substrate processing apparatus 1D makes the first cleaning body in a state where the contact surface between the first cleaning body 171 and the wafer W and the contact surface between the second cleaning body 181 and the wafer W are in contact with each other. 171 and the second washing body 181 rotate. The substrate processing apparatus 1D supplies pure water from the cleaning nozzle 70 a to the second cleaning body 181. Accordingly, the contact surface of the first cleaning body 171 and the contact surface of the second cleaning body 181 can be washed at the same time. At this time, by rotating the first cleaning body 171 in a direction opposite to the rotation direction of the second cleaning body 181, the contact surface of the first cleaning body 171 and the second cleaning body 181 can be more thoroughly. Wash the contact surface.

The tool cleaning process is not limited to the example described above. For example, the substrate processing apparatus 1B according to the third embodiment may supply a cleaning fluid to the contact surface of the second cleaning body 181 from the fifth cleaning unit 32 to wash the contact surface of the second cleaning body 181. Clean tools for clean processing. In addition, the substrate processing apparatus 1B may perform a tool cleaning process of supplying a cleaning fluid from the fourth cleaning unit 31 to the contact surface of the first cleaning body 171 to clean the contact surface of the first cleaning body 171. .

(Sixth embodiment)
Each of the above-mentioned embodiments is described with respect to an example of a situation in which the first washing section 17 and the second washing section 18 are synchronized in the double-sided washing process, but the first washing section 17 may also be made. It is completely synchronized with the second washing section 18. This point will be described with reference to FIGS. 27 to 30. FIG. 27 is a plan view showing the structure of a substrate processing apparatus according to a sixth embodiment. FIG. 28 is a longitudinal sectional view showing a structure of a substrate processing apparatus according to a sixth embodiment. 29 and 30 are diagrams showing an operation example of the double-sided washing process according to the sixth embodiment.

As shown in FIGS. 27 and 28, the substrate processing apparatus 1E according to the sixth embodiment includes a ring-shaped holding portion 24 including a plurality of holding portions 23 that hold a peripheral portion of the wafer W, and a holding portion 24 in the holding portion 24. The outer peripheral side and the holding portion 24 are arranged in a concentric circular ring-shaped fixing portion 25, and the ring-shaped bearing 26 is arranged between the holding portion 24 and the fixing portion 25.

The fixing portion 25 is fixed to the inner wall of the upper cup 16E, for example. The holding portion 24 is rotatably supported by the fixing portion 25 through a bearing 26. The bearing 26 is, for example, a ball bearing.

The substrate processing apparatus 1E includes a belt 27 that is wound around the peripheral surface of the holding portion 24 and a driving portion 28 that rotates the holding portion 24 through the belt 27. The belt 27 is, for example, pulled out to the outside of the upper cup 16E through an opening portion 161 formed on a side surface of the upper cup 16E, and is connected to the driving portion 28.

Moreover, as shown in FIG. 27, the 2nd washing part 18 of 6th Embodiment is supported horizontally by the arm part 80E. The arm portion 80E is connected to the moving portion 81E. The moving portion 81E moves the arm portion 80E horizontally along a rail 82E extending in the horizontal direction (here, the X-axis direction). In addition, the moving portion 81E raises and lowers the arm portion 80E in the vertical direction (the Z-axis direction).

The substrate processing apparatus 1E according to the sixth embodiment does not perform a bottom surface cleaning process (step S102) after the carrying-in process (step S101), but starts a two-surface cleaning process (step S103). As shown in FIG. 29, in the double-sided cleaning process according to the sixth embodiment, the first cleaning body 171 is pressed against the center portion of the top surface of the wafer W, and the second cleaning body 181 is pressed simultaneously. On the center of the bottom surface of the wafer W. Thereafter, the holding portion 24 is rotated by the driving portion 28 to rotate the wafer W. Then, the first cleaning body 171 and the second cleaning body 181 are rotated. In addition, after the wafer W, the first cleaning body 171, and the second cleaning body 181 are rotated, the first cleaning body 171 and the second cleaning body 181 may be pressed against the wafer W.

Next, as shown in FIG. 30, the first cleaning body 171 and the second cleaning body 181 are horizontally moved at the same speed in the same direction (positive direction of the X axis) toward the outer peripheral portion of the wafer W. Thereby, the entire surface of the top surface of the wafer W is cleaned by the first cleaning body 171, and the entire surface of the bottom surface of the wafer W is cleaned by the second cleaning body 181.

As described above, since the substrate processing apparatus 1E according to the sixth embodiment does not have the rotation chuck 11 at the center of the bottom surface of the wafer W, the second cleaning body 181 can be moved from the bottom surface of the wafer W Start at the center. Therefore, according to the substrate processing apparatus 1E according to the sixth embodiment, the first cleaning body 171 and the second cleaning body 181 can be completely synchronized during the double-sided cleaning process.

Here, the double-sided cleaning process is started from the center of the wafer W, but the double-sided cleaning process may be started from the end of one side of the wafer W (for example, the X-axis negative direction side). That is, the first cleaning body 171 and the second cleaning body 181 may be moved at the same speed from one end portion to the other end portion of the wafer W.

In addition, here is an example in which the holding portion 24 is rotated by the belt 27, but the method of rotating the holding portion 24 is not limited to the example described above. For example, the holding portion 24 may be rotated by a gear box. In addition, "a holding plate holding the outer periphery of the wafer W, a shaft portion connected to the lower portion of the holding plate, and a driving portion for rotating the shaft portion, and a through hole penetrating the holding plate and the shaft portion up and down may be provided. An arm portion supporting the second cleaning body 181 is inserted into the through hole to arrange the second cleaning body 181 between the wafer W and the holding plate. According to this structure, the second cleaning body 181 can be moved from the central portion of the wafer W to the outer peripheral portion without interfering with the shaft portion.

(Seventh embodiment)
In the seventh embodiment, another configuration example of the first cleaning body 171 and the second cleaning body 181 will be described. As an example, another structural example of the second washing body 181 is disclosed in FIGS. 31 to 33. FIG. 31 is a perspective view showing a structure of a second cleaning body according to a seventh embodiment. In addition, FIG. 32 is a longitudinal sectional view showing a structure of a second cleaning body in a seventh embodiment. In addition, FIG. 33 is a view showing a state where the second cleaning body of the seventh embodiment is pressed against the wafer W.

The second cleaning body 181F according to the seventh embodiment shown in FIG. 31 has a function as a polishing body that polishes the bottom surface of the wafer W in addition to its function as a cleaning body.

Specifically, as shown in FIG. 31, the second cleaning body 181F includes, for example, a polishing member 50 having a polishing surface 50a composed of a urethane foam, a nonwoven fabric, or the like; for example, polyvinyl alcohol A cleaning member 51 made of a flexible material such as polypropylene, nylon, or the like; and a support member 52 that supports the polishing member 50 and the cleaning member 51. The polishing surface 50a of the polishing member 50 is, for example, attached to the top surface of a substantially annular ring-shaped member 50b formed smaller than the diameter of the wafer W (for example, about a quarter of the diameter of the wafer W). Composed of urethane foam or sheet made of nonwoven fabric. In addition, in FIG. 31, as an example of the shape of the polishing member 50, eight arc-shaped polishing surfaces 50a having a predetermined width are drawn in a concentric circle shape at a predetermined interval.

The cleaning member 51 is formed in a fan shape, for example, and a plurality of cleaning members 51 are arranged inside the annular polishing member 50 so as to form a concentric circle with the polishing member 50. In addition, FIG. 31 shows an example of a state in which four cleaning members 51 forming a fan shape are arranged inside the polishing member 50.

The surfaces of the polishing member 50 and the cleaning member 51 on the opposite sides of the support member 52 are the polishing surface 50a and the cleaning surface 51a which are respectively disposed to face the wafer W. For example, as shown in FIG. The cleaning surface 51 a is formed so as to protrude upward from the polishing surface 50 a of the polishing member 50. Therefore, when the second cleaning body 181F is brought close to the bottom surface of the wafer W, the cleaning member 51 comes into contact with the bottom surface of the wafer W first. Then, since the cleaning member 51 is made of a flexible material, the second cleaning body 181F is further pushed toward the wafer W side after the cleaning member 51 contacts the wafer W, as shown in FIG. 33. As shown, the cleaning member 51 is compressed and the polishing member 50 is also in contact with the bottom surface of the wafer W, so that the wafer W is polished.

In this manner, the second cleaning body 181F may have a function as a polishing body. At this time, for example, as shown in FIG. 33, by rotating the second cleaning body 181F while the polishing member 50 is in contact with the bottom surface of the wafer W, the bottom surface of the wafer W can be polished. In addition, after the second cleaning body 181F is slightly lowered to form only the cleaning member 51 in contact with the bottom surface of the wafer W, the second cleaning body 181F is rotated to wash the bottom surface of the wafer W. net.

(Embodiment 8)
In the eighth aspect, the structure of a substrate processing apparatus each including a cleaning body and a polishing unit will be described with reference to FIGS. 34 to 36. FIG. 34 is a side view showing the structure of a substrate processing apparatus according to an eighth embodiment. 35 and 36 are plan views showing the wafer W, the cleaning body, the polishing body, and the rotating plate.

As shown in FIG. 34, the substrate processing apparatus 1G according to the eighth embodiment includes, for example, a circular plate, and the wafer processing device 1G is arranged to face the wafer W held by the suction pad 10 or the rotary chuck 11 so as to face each other. A planar rotating body 101 and a cleaning body 6A and a polishing body 6B provided on the rotating plate 101. The rotating plate 101 has a structure in which a rotation shaft 102 provided on a bottom surface side thereof is arbitrarily rotated about a vertical axis by a driving mechanism 103. The swivel shaft 102 is provided at the center of the rotating plate 101. Therefore, the center of the rotation plate 101 is aligned with the center of the rotation axis 102 in plan view, and the center is the rotation center O1. In this example, the turning mechanism is formed by the rotating plate 101, the turning shaft 102, and the driving mechanism 103.

As shown in FIG. 35, the radius r1 of the rotating plate 101 is set smaller than the radius r2 of the wafer W. In addition, when the area including the central portion of the bottom surface of the wafer W is to be cleaned, the wafer W is held on the suction pad 10 and moved horizontally, and the rotary shaft 102 is provided in the moving area of the wafer W. That is, when the area including the central portion of the bottom surface of the wafer W is to be cleaned, the swivel axis 102 is disposed at a position overlapping the wafer W. In addition, in a plan view, the rotation axis 102 of the rotation plate 101 and the shaft portion 20 of the rotation chuck 11 are provided side by side along the horizontal direction (X-axis direction).

The cleaning body 6A and the polishing body 6B are formed of, for example, cylindrical brushes, and are connected to the driving mechanisms 112A and 112B through the driving shafts 111A and 111B. The driving mechanisms 112A and 112B are provided on the rotating plate 101 to raise and lower the cleaning body 6A and the polishing body 6B and to rotate around the vertical axis.

The cleaning body 6A and the polishing body 6B are arranged on the rotating plate 101 so as to be spaced apart from each other in the horizontal direction. In addition, the cleaning body 6A and the polishing body 6B can be rotated in a single direction while the wafer W is held and rotated by the spin chuck 11, so that both the cleaning body 6A and the polishing body 6B can be cleaned. And polishing all areas except the central portion of the bottom surface of the wafer W ”. The so-called turning in a single direction means that when the shaft portion 20 of the rotary chuck 11 is viewed from the turning shaft 102 of the rotating plate 101, the cleaning body 6A on one side (left side in this example) of the cleaning chuck 11 is on the other side (Right side in this example) Swiveling.

In this example, "the polishing body 6A is located at the center when the cleaning body 6A is located at the center with respect to the wafer W held by the rotary chuck 11 in plan view, and the cleaning body 6A is located at the center of the polishing body 6B. At the periphery. " The term “located at the periphery” means that the cleaning body 6A and the polishing body 6B are located at the outer edge of the wafer W held by the cleaning (polishing) rotating chuck 11; the term “located at the center” means the cleaning body 6A and the polishing body 6B is located at a position on a straight line L connecting the rotation center O2 and the rotation center O1 of the spin chuck 11. FIG. 35 shows a state where the cleaning body 6A is located at the periphery and the abrasive body 6B is located at the center, and FIG. 36 shows a state where the cleaning body 6A is located at the center and the abrasive body 6B is located at the periphery.

In this way, when the rotation of the cleaning body 6A on the left side starts to the right, the grinding body 6B is located on a straight line L connecting the rotation axis 102 of the rotation plate 101 and the shaft portion 20 of the rotation chuck 11 when the rotation is completed. At this time, the cleaning body 6A is positioned on the straight line L. Furthermore, since the radius r1 of the rotating plate 101 is shorter than the radius r2 of the wafer W, the radius of rotation of the cleaning body 6A and the polishing body 6B is shorter than the radius r2 of the wafer W. The turning radius refers to the length of the connecting line between the centers of the cleaning body 6A and the polishing body 6B and the turning center O1 of the rotating plate 101.

If so, the cleaning body 6A and the polishing body 6B are not limited to being provided in an integrated manner like the second cleaning body 181F of the seventh embodiment, and may be separately provided.

(9th embodiment)
Next, a ninth embodiment will be described with reference to FIGS. 37 to 39. First, a configuration example of a substrate processing apparatus according to a ninth embodiment will be described with reference to FIG. 37. FIG. 37 is a plan view showing the structure of a substrate processing apparatus according to a ninth embodiment.

As shown in FIG. 37, the substrate processing apparatus 1H according to the ninth embodiment includes a first cleaning unit 17H.

The first cleaning unit 17H includes a first cleaning body 171H. The first cleaning body 171H is, for example, a two-fluid nozzle. The first cleaning body 171H mixes a gas supplied from a gas supply source not shown in the figure with a liquid supplied from a liquid supply source not shown in the figure, and sprays the mixed fluid mixed with the gas and the liquid to Top surface of wafer W. The gas supplied from the gas supply source is, for example, an inert gas such as nitrogen. The liquid supplied from the liquid supply source is, for example, pure water.

The first washing portion 17H is horizontally supported by the arm portion 70H, and the arm portion 70H is connected to the moving portion 71H. The moving portion 71H moves the arm portion 70H horizontally along a rail 72H extending in the horizontal direction (here, the Y-axis direction).

In addition, in the substrate processing apparatus 1H according to the ninth embodiment, the arm portion 80 of the second cleaning portion 18 is supported and connected to the turning portion 81H, and the turning portion 81H rotates the arm portion 80 about the vertical axis. In addition, the substrate processing apparatus 1H may have a structure including a moving portion 81 that horizontally moves the arm portion 80 in the same manner as the substrate processing apparatus 1 of the first embodiment.

Next, a bottom surface washing process according to a ninth embodiment will be described with reference to FIG. 38. Fig. 38 is a diagram showing an example of the operation of the bottom surface washing process in the ninth embodiment.

As shown in FIG. 38, in the ninth embodiment, the cleaning of the bottom surface of the wafer W by the second cleaning unit 18 is performed by the movement and movement of the wafer W by the suction pad 10 (see FIG. 37). The combination of the rotation movement of the 2nd washing part 18 by the rotation part 81H is performed. Specifically, the control unit 200H rotates the second washing body 181 while repeating a predetermined number of rotation movements to one side (for example, the positive direction of the Y-axis) and the other movement (for example, negative direction of the Y-axis). In addition, the control unit 200H moves the wafer W in the negative X-axis direction using the suction pad 10. Thereby, the central area A is washed by the second washing body 181.

Next, a double-sided washing process according to a ninth embodiment will be described with reference to FIG. 39. FIG. 39 is a diagram showing an operation example of the double-sided washing process in the ninth embodiment.

As shown in FIG. 39, the control unit 200H moves the first washing body 171H and the second washing body 181 in a direction in which the first washing body 171H and the second washing body 181 are separated from each other during the double-side washing process. Move horizontally.

When the ejection position of the first cleaning body 171H and the rotation center of the second cleaning body 181 do not overlap in a plan view, if the distance between the first cleaning body 171H and the second cleaning body 181 is close, there will be a first The cleaning body 181 may not properly clean the bottom surface of the wafer W. This is because the wafer W is bent by the pressure of the mixed fluid sprayed from the first cleaning body 171H, so that the wafer W is partially lifted from the second cleaning body 181. Therefore, when the ejection position of the first cleaning body 171H and the rotation center of the second cleaning body 181 do not overlap in a plan view, it is preferable that the first cleaning body 171H and the second cleaning body 181 be separated as much as possible.

Therefore, in the ninth embodiment, in the double-side washing process, the first washing body 171H and the second washing body 181 are moved horizontally in a direction in which the first washing body 171H and the second washing body 181 are separated from each other. . This prevents the first cleaning body 171H and the second cleaning body 181 from approaching each other, so that it is possible to suppress the pressure of the mixed fluid from warping the wafer W and causing a part of the wafer W to be lifted from the second cleaning body 181. Therefore, the second cleaning body 181 can clean the bottom surface of the wafer W appropriately. Therefore, the second cleaning body 181 can be used to thoroughly clean the wafer W.

Specifically, the control unit 200H first rotates the spin chuck 11 to rotate the wafer W. In addition, the control unit 200H arranges the second cleaning body 181 on the inner side in the radial direction from the outer peripheral portion of the wafer W, and moves in the moving direction of the first cleaning body 171H described later than the center of the wafer W ( This is the position shifted on the negative side of the Y-axis). This position may be the position of the second cleaning body 181 at the end of the above-mentioned bottom surface cleaning process. After that, the control unit 200H starts to supply pure water from the cleaning nozzle 80 a to the bottom surface of the wafer W while bringing the second cleaning body 181 into contact with the bottom surface of the wafer W, and simultaneously rotates the second cleaning body 181.

Next, the control unit 200H controls the turning unit 81H to rotate the second cleaning body 181 to the side opposite to the moving direction of the first cleaning body 171H than the center of the wafer W (here, the Y axis) Positive direction side) The outer peripheral portion of the wafer W at the offset position. Then, the control unit 200H stops the turning movement of the second cleaning body 181 caused by the turning portion 81H when the second cleaning body 181 reaches the outer peripheral portion of the wafer W, and causes the second cleaning body 181 to This part rotates for a certain time.

In addition, the control unit 200H controls the moving unit 71H to arrange the first cleaning body 171H above the center of the wafer W, and ejects the mixed fluid from the first cleaning body 171H to the center of the top surface of the wafer W. Then, the control unit 200H moves after the second cleaning body 181 has moved at least to the opposite side of the moving direction of the first cleaning body 171H than the center of the wafer W (here, the Y-axis positive direction side). In the timing sequence, the first cleaning body 171H is moved to the outer peripheral part in the negative direction of the Y axis more than the center of the wafer W by controlling the moving part 71H. Thereby, the double-sided washing process can be performed so that the first washing body 171H and the second washing body 181 are not close to each other.

As described above, the substrate processing apparatus 1H according to the ninth embodiment includes the holding section (for example, the spin chuck 11), the first cleaning body 171H, and the first moving mechanism (for example, the arm section 70H, the moving section 71H, and the rail). 72H), the second cleaning body 181, the second moving mechanism (for example, the arm portion 80 and the turning portion 81H), and the control portion 200H. The holding portion holds a substrate (for example, a wafer W). The first cleaning body 171H sprays fluid (for example, a mixed fluid) on one surface (for example, the top surface) of the top surface and the bottom surface of the substrate held by the holding part to clean the surface on the one side. The first moving mechanism moves the first cleaning body 171H horizontally. The second cleaning body 181 is in contact with the other surface (for example, the bottom surface) of the top surface and the bottom surface of the substrate held by the holding portion to clean the other surface. The second moving mechanism moves the second cleaning body 181 horizontally. The control unit 200H controls the first moving mechanism and the second moving mechanism to synchronously move the first cleaning body 171H which ejects fluid to one surface and the second cleaning body in contact with the bottom surface to perform two-side cleaning deal with.

Specifically, the control unit 200H controls the first moving mechanism and the second moving mechanism during the two-side cleaning process, and causes the first cleaning body 171H and the second cleaning body 181 to the first cleaning body 171H and the second The cleaning bodies 181 move horizontally in a direction separated from each other.

Therefore, according to the substrate processing apparatus 1H according to the ninth embodiment, the wafer W is not easily affected by the bending of the wafer W caused by the pressure of the mixed fluid. Therefore, the second cleaning body 181 can be used to thoroughly clean the wafer W.

In addition, here is an example in which the top surface of the wafer W is cleaned by the first cleaning body 171H and the bottom surface of the wafer W is cleaned by the second cleaning body 181, but the first cleaning may also be used. The portion 17H cleans the bottom surface of the wafer W, and cleans the top surface of the wafer W with the second cleaning body 181.

In addition, here is an example in which the first washing body 171H is moved to the negative side of the Y axis, but the moving direction of the first washing body 171H is not limited to this. For example, it may be moved to Y The positive axis side moves. At this time, the control unit 200H only needs to move the second cleaning body 181 from a position shifted from the center of the wafer W toward the positive side of the Y-axis direction to a side shifted from the center of the wafer W toward the negative side of the Y-axis. The outer peripheral portion of the wafer W at the shifted position may be sufficient.

In addition, here is an example in which the first cleaning body 171H is a two-fluid nozzle that ejects a mixed fluid of a gas and a liquid, but the first cleaning body 171H only needs to be a person who supplies a fluid to the wafer W It does not have to be a 2 fluid nozzle.

(Variation Example)
In the embodiment described above, the period from the start of the double-side cleaning process to the time when the first cleaning body 171 and the second cleaning body 181 are synchronized, that is, the wafer W is cleaned in the first cleaning body 171 The second washing body 181 is stopped during the period of the central part of the body. However, the present invention is not limited to this, and the bottom surface of the wafer W may be cleaned by the second cleaning body 181 while the central portion of the wafer W is cleaned by the first cleaning body 171.

In the above embodiment, the first cleaning body 171 and the second cleaning body 181 are rotated in the same direction as the wafer W. However, the first cleaning body 171 and the second cleaning body may be rotated. The body 181 and the wafer W rotate in opposite directions. In addition, in the above embodiment, the first washing body 171 and the second washing body 181 are rotated in the same direction, but the first washing body 171 and the second washing body 181 may be opposite to each other. Direction of rotation. The rotation speed of the first cleaning body 171 and the second cleaning body 181 may be the same as the rotation speed of the wafer W, may be slower than the rotation speed of the wafer W, or may be faster than the rotation speed of the wafer W. The first washing body 171 and the second washing body 181 may not necessarily be rotated.

In the above embodiment, the first cleaning body 171 and the second cleaning body 181 are moved linearly along the rails 72 and 82. However, the first cleaning body 171 and the second cleaning body 181 may be supported by the first swivel arm portion that rotates about the vertical axis. The first washing body 171 supports the second washing body 181 at the same time as the second turning arm portion which rotates around the vertical axis, thereby moving the first washing body 171 and the second washing body 181 in an arc shape. . At this time, the movements of the first and second washing bodies 171 and 181 can be synchronized by aligning the positions of the turning centers of the first and second turning arms.

In addition, in the embodiment described above, an example in which a double-sided cleaning process is performed is described, but for example, only the bottom-side cleaning process may be performed depending on the type of the wafer W. When only the bottom surface cleaning process is performed without performing the double-side cleaning process, in order to suppress the flow of pure water and the like to the top surface side of the wafer W, the rotation speed of the wafer W may be reduced to a state where the double-side cleaning process is performed. Kind lower. It is also possible to perform cleaning of only the top surface of the wafer W without performing the double-sided cleaning process.

Here, the cleaning process on both sides of the wafer W is not limited to the cleaning of the circuit formation surface and the non-circuit formation surface. For example, it may be a member in which at least one side of the wafer W is bonded to the circuit formation surface. In this case, it may be a protective member that protects the circuit, or a bonded wafer to which each wafer is bonded. In addition, it may be the wafer W before the circuit is formed.

Further effects or modified embodiments can be easily derived by those skilled in the art. Therefore, the aspects of the present invention in a wide range are not limited to the specific details and representative implementation aspects shown and described above. Therefore, various changes can be made without departing from the spirit or scope of the general inventive concept as defined by the appended patent claims and their equivalents.

1‧‧‧ substrate processing device

10‧‧‧ Adsorption Pad

101‧‧‧ rotating plate

102‧‧‧rotation axis

11‧‧‧ Rotating Chuck

111A, 111B‧‧‧Drive shaft

103, 112A, 112B‧‧‧Drive mechanism

13, 15‧‧‧ frame

14‧‧‧ support board

16, 16E‧‧‧upper cup

161‧‧‧ opening

17‧‧‧The first cleaning department

171, 171H‧‧‧The first washing body

172‧‧‧The first pillar member

173‧‧‧1st drive unit

17H‧‧‧The first cleaning department

18‧‧‧The second cleaning department

181, 181F‧‧‧ 2nd washing body

182‧‧‧ 2nd pillar member

183‧‧‧Second driving unit

1A, 1B, 1C, 1D, 1E, 1G, 1H‧‧‧ substrate processing equipment

20‧‧‧ Shaft

200, 200H‧‧‧Control Department

21‧‧‧Drive mechanism

22‧‧‧ Lifting Pin

23‧‧‧ holding section

24‧‧‧ Holding Department

25‧‧‧Fixed section

26‧‧‧bearing

27‧‧‧Belt

28‧‧‧Driver

30‧‧‧The third cleaning department

31‧‧‧The fourth cleaning department

32‧‧‧The fifth cleaning department

40‧‧‧Drain tube

41‧‧‧Exhaust pipe

45‧‧‧Lifting mechanism

46‧‧‧ pillar members

47‧‧‧Driver

50‧‧‧ abrasive components

50a‧‧‧ polished surface

50b‧‧‧ ring member

51‧‧‧washing components

51a‧‧‧wash face

52‧‧‧ supporting components

6A‧‧‧washing body

6B‧‧‧Grinding body

70‧‧‧ arm

70a‧‧‧washing nozzle

70H‧‧‧arm

71, 71H‧‧‧Mobile

72, 72H‧‧‧ orbit

75, 85‧‧‧Load detection department

80, 80E‧‧‧arm

80a‧‧‧washing nozzle

81, 81E‧‧‧Mobile

81H‧‧‧Round Department

82, 82E‧‧‧ track

90‧‧‧ handling mechanism

A‧‧‧Central Area

B‧‧‧ Contact Area

C‧‧‧center axis

H‧‧‧Memory Media

H1, H2‧‧‧ height position

L‧‧‧Straight

O1‧‧‧ Roundabout Center

O2, R1, R2‧‧‧ center of rotation

r1, r2‧‧‧radius

Steps S101 ～ S105‧‧‧‧

W‧‧‧ Wafer

X, Y, Z‧‧‧ directions

1 is a plan view showing a structure of a substrate processing apparatus according to a first embodiment.

[Fig. 2] A longitudinal sectional view showing a structure of a substrate processing apparatus according to a first embodiment.

FIG. 3 is a flowchart showing a sequence of a series of cleaning processes by the substrate processing apparatus.

[Fig. 4] A diagram showing an operation example of a carry-in process.

[FIG. 5] A diagram showing an operation example of a carry-in process.

[Fig. 6] Fig. 6 is a diagram illustrating an operation example of a bottom surface washing process.

[Fig. 7] Fig. 7 is a diagram showing an operation example of a bottom surface washing process.

[Fig. 8] Fig. 8 is a diagram illustrating an operation example of a bottom surface washing process.

[Fig. 9] Fig. 9 is a diagram showing an operation example of a double-sided washing process.

[Fig. 10] Fig. 10 is a diagram illustrating an operation example of a double-sided washing process.

[Fig. 11] Fig. 11 is a diagram showing an operation example of a double-sided washing process.

[Fig. 12] Fig. 12 is a diagram showing an operation example of a double-sided washing process.

[Fig. 13] Fig. 13 is a diagram illustrating an operation example of a double-sided washing process.

14 is a view showing an example when only the bottom surface of a wafer is cleaned.

[FIG. 15] A diagram showing an example when both sides of a wafer are cleaned at the same time.

FIG. 16 is a diagram showing another example of a timing for starting synchronization of the first washing body and the second washing body.

17 is a diagram showing another example of a timing for starting synchronization of a first washing body and a second washing body.

18 is a view showing another example of positions where the second cleaning body and the first cleaning body overlap.

[FIG. 19] A diagram showing another operation example of the double-sided washing process.

FIG. 20 is a diagram showing another operation example of the double-sided washing process.

[FIG. 21] It is a figure which shows the other operation example of a double-sided washing process.

[FIG. 22] It is a figure which shows the height position of the upper cup in a bottom surface washing process.

FIG. 23 is a view showing a height position of an upper cup in a double-sided washing process. FIG.

[FIG. 24] A diagram showing another example of a cleaning tool.

[FIG. 25] A diagram showing an operation example of a double-sided washing process in a fourth embodiment.

[FIG. 26] A diagram showing an operation example of a tool washing process.

27 is a plan view showing a structure of a substrate processing apparatus according to a sixth embodiment.

[Fig. 28] Fig. 28 is a longitudinal sectional view showing a structure of a substrate processing apparatus according to a sixth embodiment.

[Fig. 29] Fig. 29 is a diagram showing an operation example of a double-sided washing process in a sixth embodiment.

[Fig. 30] Fig. 30 is a diagram showing an operation example of a double-sided washing process in a sixth embodiment.

[Fig. 31] Fig. 31 is a perspective view showing a structure of a second washing body according to a seventh embodiment.

[Fig. 32] Fig. 32 is a longitudinal sectional view showing a structure of a second cleaning body according to a seventh embodiment.

[Fig. 33] Fig. 33 is a view showing a state where the second cleaning body of the seventh embodiment is pressed against the wafer.

[FIG. 34] A side view showing the structure of a substrate processing apparatus according to an eighth embodiment.

FIG. 35 is a plan view showing a wafer, a cleaning body, a polishing body, and a rotating plate.

[FIG. 36] A plan view showing a wafer, a cleaning body, a polishing body, and a rotating plate.

[FIG. 37] A plan view showing a structure of a substrate processing apparatus according to a ninth embodiment.

[Fig. 38] Fig. 38 is a diagram showing an example of the operation of the bottom surface washing process in the ninth embodiment.

[Fig. 39] Fig. 39 is a diagram illustrating an operation example of the double-sided washing process in the ninth embodiment.

Claims (12)

A substrate processing device includes: A holding portion that holds a substrate; The first cleaning body sprays fluid on one surface of one of the top surface and the bottom surface of the substrate held by the holding portion, or contacts the surface of the one surface to clean the surface of the one surface. ; A first moving mechanism that moves the first washing body horizontally; A second cleaning body, which is in contact with a surface on the other side of the top surface and the bottom surface of the substrate held by the holding portion to clean the surface on the other side; A second moving mechanism that moves the second washing body horizontally; and A control unit that controls the first moving mechanism and the second moving mechanism, and causes the first cleaning body to spit the fluid to the surface on one side or contact the surface on the one side and the surface on the other side. The contacted second cleaning body is moved horizontally in synchronization to perform a double-sided cleaning process. For example, the substrate processing apparatus of the scope of application for patent No. 1 wherein: The first cleaning body is a person who sprays the fluid on the surface of one side to clean the surface of the one side; The control unit controls the first moving mechanism and the second moving mechanism so that the first cleaning body and the second cleaning body face the first cleaning body and the second during the two-side cleaning process. The washing bodies move horizontally in a direction separated from each other. For example, the substrate processing apparatus of the scope of application for patent No. 2 wherein, The holding section contains: A first holding portion that is rotatable and sucks and holds a first region including a central portion of the surface of the other side of the substrate; and A second holding portion that holds and holds a second region other than the first region of the surface on the other side of the substrate; The control unit controls the second moving mechanism in a state where the substrate is held by the second holding unit by suction, so that the second cleaning body is brought into contact with the first area and the first area is moved horizontally to implement After the surface is cleaned on the other side, the second cleaning body is brought into contact with the second area in a state where the substrate is held by the first holding portion and the substrate is rotated, thereby performing the two-side washing. Net deal. For example, the substrate processing apparatus of the scope of application for patent No. 1 wherein: The first cleaning body is in contact with the top surface of the substrate to clean the top surface; The second cleaning body is brought into contact with the bottom surface of the substrate to clean the bottom surface. For example, the substrate processing device of the scope of application for patent No. 4 wherein, The control unit is configured to maintain a contact surface between the first cleaning body and the top surface, a second cleaning body, and the bottom surface in a plan view of the substrate held by the holding portion from a thickness direction. In a state where the contact surfaces are repeated, a process in which the first washing body and the second washing body are horizontally moved on one side is used as the two-face washing process. For example, the substrate processing device of the scope of application for patent No. 4 wherein, Contains: A first driving unit that rotates the first cleaning body about a vertical axis; and A second driving unit that rotates the second cleaning body about a vertical axis; The control unit is configured to cause the rotation center of the first cleaning body formed by the first driving unit to align with the rotation center of the second cleaning body formed by the second driving unit. The process of horizontally moving the first washing body and the second washing body is used as the double-side washing process. For example, a substrate processing apparatus according to any one of claims 4 to 6, in which: The first moving mechanism can raise and lower the first washing body; The second moving mechanism can raise and lower the second washing body; The control unit controls the first movement in the two-side cleaning process in such a manner that the pressing force of the first cleaning body against the top surface and the second washing body against the bottom surface are the same magnitude At least one of the mechanism and the second moving mechanism. For example, the substrate processing apparatus of the scope of application for patent No. 7 wherein, Contains: A load detection unit that detects an abutting pressure of the first cleaning body on the top surface or an abutting pressure of the second cleaning body on the bottom surface; The control unit arranges one of the first washing body and the second washing body at a predetermined height position, and adjusts the first washing body and the second washing body based on a detection result of the load detection unit. The height position of the other side of the body. For example, a substrate processing apparatus according to any one of claims 4 to 6, in which: One of the top surface and the bottom surface is a circuit formation surface; Among the first cleaning body and the second cleaning body, the contact surface of one of the cleaning bodies in contact with the circuit forming surface with the substrate is more than that of the other cleaning body with the substrate. The contact surface is larger. For example, a substrate processing apparatus according to any one of claims 4 to 6, in which: One of the top surface and the bottom surface is a circuit formation surface; Among the first and second cleaning bodies, one of the cleaning bodies in contact with the circuit-forming surface is softer than the other cleaning body. For example, a substrate processing apparatus according to any one of claims 4 to 6, in which: The holding section contains: A first holding portion that is rotatable and sucks and holds a first region including a central portion of the bottom surface of the substrate; and A second holding portion that sucks and holds a second region other than the first region of the bottom surface of the substrate; The control unit controls the second moving mechanism in a state where the substrate is held by the second holding unit by suction, so that the second cleaning body is brought into contact with the first area and the first area is moved horizontally to implement The bottom surface washing process, and then the second cleaning body is brought into contact with the second area in a state where the substrate is sucked and held by the first holding portion and the substrate is rotated, so that the two surface washing process is performed. A substrate processing method includes: A holding step that holds the substrate; and The two-side cleaning step includes a first cleaning body that sprays fluid from the surface of one of the top surface and the bottom surface of the substrate or contacts the surface of the one surface to clean the surface of the one surface. The surface of the one side sprays the fluid, or the first cleaning body is brought into contact with the surface of the one side, and the other side of the top surface and the bottom surface of the substrate is brought into contact to make the other side The second cleaning body on the surface is brought into contact with the surface on the other side, and then in this state, the first cleaning body and the second cleaning body are moved horizontally in synchronization to move the top surface and the Wash the underside.