TWI592748B - Photosensitive resin composition and photosensitive resin laminated body - Google Patents

Photosensitive resin composition and photosensitive resin laminated body Download PDF

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TWI592748B
TWI592748B TW105101582A TW105101582A TWI592748B TW I592748 B TWI592748 B TW I592748B TW 105101582 A TW105101582 A TW 105101582A TW 105101582 A TW105101582 A TW 105101582A TW I592748 B TWI592748 B TW I592748B
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photosensitive resin
group
mass
resin composition
phenyl
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TW105101582A
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TW201616234A (en
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Takayuki Matsuda
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Asahi Kasei E-Materials Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2/00Processes of polymerisation
    • C08F2/46Polymerisation initiated by wave energy or particle radiation
    • C08F2/48Polymerisation initiated by wave energy or particle radiation by ultraviolet or visible light
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/12Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
    • C07C39/15Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings with all hydroxy groups on non-condensed rings, e.g. phenylphenol
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10Esters
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F265/00Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00
    • C08F265/02Macromolecular compounds obtained by polymerising monomers on to polymers of unsaturated monocarboxylic acids or derivatives thereof as defined in group C08F20/00 on to polymers of acids, salts or anhydrides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20Exposure; Apparatus therefor
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0326Organic insulating material consisting of one material containing O
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0502Patterning and lithography
    • H05K2203/0514Photodevelopable thick film, e.g. conductive or insulating paste
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0023Etching of the substrate by chemical or physical means by exposure and development of a photosensitive insulating layer

Description

感光性樹脂組合物及感光性樹脂積層體 Photosensitive resin composition and photosensitive resin laminate

本發明係關於一種感光性樹脂組合物等。 The present invention relates to a photosensitive resin composition and the like.

於電腦、行動電話等電子機器中,為了安裝零件、半導體等而使用印刷配線板等。作為印刷配線板等之製造用抗蝕劑,先前使用所謂之乾膜光阻(以下有時稱為DF),該乾膜光阻係於支撐膜上積層感光性樹脂層,進而於該感光性樹脂層上視需要積層保護膜而成的感光性樹脂積層體。作為感光性樹脂層,目前通常為使用弱鹼性水溶液作為顯影液之鹼性顯影型者。於使用DF製作印刷配線板等時,例如經由以下步驟。於DF具有保護膜之情形時,首先剝離保護膜。其後,使用層壓機等在銅箔積層板或可撓性基板等永久電路製作用基板上層壓DF,經由配線圖案遮罩膜等進行曝光。其次,視需要剝離支撐膜,藉由顯影液將未硬化部分(例如負型時為未曝光部分)之感光性樹脂層溶解或分散去除,於基板上形成硬化抗蝕劑圖案(以下有時僅稱為抗蝕劑圖案)。 In an electronic device such as a computer or a mobile phone, a printed wiring board or the like is used for mounting components, semiconductors, and the like. As a resist for manufacturing a printed wiring board or the like, a so-called dry film resist (hereinafter sometimes referred to as DF) is used, and the dry film resist is formed by laminating a photosensitive resin layer on a support film, and further, the photosensitivity A photosensitive resin laminate in which a protective film is laminated as needed on the resin layer. As the photosensitive resin layer, an alkali-developing type using a weakly alkaline aqueous solution as a developing solution is generally used. When a printed wiring board or the like is produced using DF, for example, the following steps are performed. In the case where the DF has a protective film, the protective film is first peeled off. Then, DF is laminated on a substrate for producing a permanent circuit such as a copper foil laminate or a flexible substrate using a laminator or the like, and exposure is performed via a wiring pattern mask film or the like. Next, the support film is peeled off as needed, and the photosensitive resin layer of the uncured portion (for example, the unexposed portion in the negative type) is dissolved or dispersed by the developer to form a hardened resist pattern on the substrate (hereinafter sometimes only It is called a resist pattern).

形成抗蝕劑圖案後形成電路之製程大致可分為兩個方法。第一方法係將未由抗蝕劑圖案覆蓋之基板面(例如銅箔積層板之銅面)蝕刻去除後,利用較顯影液更強之鹼性水溶液去除抗蝕劑圖案部分的方法(蝕刻法)。第二方法係於上述基板面上進行銅、焊料、鎳、錫等之鍍敷處理後,以與第一方法相同之方式去除抗蝕劑圖案部分,進而將露出之基板面(例如銅箔積層板之銅面)蝕刻的方法(鍍敷法)。蝕刻時可 使用氯化銅、氯化鐵、銅氨錯合物溶液等。近年來,伴隨著電子機器之小型化及輕量化,印刷配線板之微細化及高密度化進步,而需求於如上述之製造步驟中提供高解析性等之高性能DF。作為可實現此種高解析性者,於專利文獻1中揭示有藉由特定之熱塑性樹脂、單體及光聚合性起始劑而使解析性提高之感光性樹脂組合物。 The process of forming a circuit after forming a resist pattern can be roughly divided into two methods. The first method is a method of removing a portion of a resist pattern by using an alkaline aqueous solution stronger than a developing solution by etching a substrate surface not covered by a resist pattern (for example, a copper surface of a copper foil laminated board) (etching method) ). In the second method, after the plating treatment of copper, solder, nickel, tin, or the like on the surface of the substrate, the resist pattern portion is removed in the same manner as the first method, and the exposed substrate surface (for example, a copper foil layer is removed). The copper surface of the board) etching method (plating method). When etching A copper chloride, a ferric chloride, a copper ammonia complex solution or the like is used. In recent years, with the miniaturization and weight reduction of electronic equipment, the miniaturization and high density of printed wiring boards have progressed, and high-performance DFs having high resolution and the like are required in the above-described manufacturing steps. Patent Document 1 discloses a photosensitive resin composition which is improved in resolution by a specific thermoplastic resin, a monomer, and a photopolymerizable initiator.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2010-249884號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2010-249884

然而,於近年來較多使用之利用描繪圖案之直接描繪等的曝光方法之情況下,焦點之位置對解析性產生較大影響。例如,若由於基板之翹曲及變形、曝光裝置之設定不良等而使曝光時之焦點之位置自基板表面挪移,則會導致解析性大幅度地劣化。其結果,存在藉由蝕刻法形成電路時產生短路問題,藉由鍍敷法形成電路時產生缺損、斷線、鍍敷不良等問題之情形。就該觀點而言,上述專利文獻1中揭示之技術仍存在改良之餘地。 However, in the case of an exposure method using a direct drawing or the like of a drawing pattern which has been used in recent years, the position of the focus has a large influence on the resolution. For example, if the position of the focus at the time of exposure is moved from the substrate surface due to warpage and deformation of the substrate, poor setting of the exposure device, or the like, the resolution is greatly deteriorated. As a result, there is a problem that a short circuit occurs when a circuit is formed by an etching method, and a problem such as a defect, a disconnection, or a plating failure occurs when a circuit is formed by a plating method. From this point of view, there is still room for improvement in the technique disclosed in the above Patent Document 1.

因此,本發明之課題在於提供一種曝光時之焦點挪移時亦表現出高解析性之感光性樹脂積層體、及用以形成該感光性樹脂積層體之感光性樹脂組合物,並且在於提供一種使用該感光性樹脂積層體之抗蝕劑圖案之形成方法及導體圖案之形成方法。 Therefore, an object of the present invention is to provide a photosensitive resin laminate which exhibits high resolution when the focus is exposed during exposure, and a photosensitive resin composition for forming the photosensitive resin laminate, and provides a use. A method of forming a resist pattern of the photosensitive resin laminate and a method of forming a conductor pattern.

本發明者為了解決上述課題而進行了潛心研究並反覆實驗。結果發現,藉由以下之技術方法可解決該課題。 The present inventors conducted intensive studies and repeated experiments in order to solve the above problems. As a result, it has been found that the subject can be solved by the following technical methods.

即,本發明係如下所述之內容。 That is, the present invention is as follows.

[1]一種感光性樹脂組合物,其係含有(A)鹼可溶性高分子、(B)具 有乙烯性不飽和雙鍵之化合物、及(C)光聚合起始劑者,且於基板表面上形成包含該感光性樹脂組合物之感光性樹脂層並進行曝光及顯影所獲得之抗蝕劑圖案中,於將焦點位置聚焦於該基板表面並進行該曝光時之圖案解析度a、與將焦點位置聚焦於自該基板表面於該基板之厚度方向上向基板內側挪移300μm之位置並進行該曝光時之圖案解析度b之差未達15μm。 [1] A photosensitive resin composition containing (A) an alkali-soluble polymer, (B) A resist obtained by forming a photosensitive resin layer containing the photosensitive resin composition on a surface of a substrate and exposing and developing the compound having an ethylenically unsaturated double bond and (C) a photopolymerization initiator In the pattern, the pattern resolution a when the focus position is focused on the surface of the substrate and the exposure is performed, and the focus position is focused on a position shifted by 300 μm from the surface of the substrate in the thickness direction of the substrate toward the inside of the substrate. The difference in pattern resolution b at the time of exposure was less than 15 μm.

[2]如[1]所記載之感光性樹脂組合物,其中以感光性樹脂組合物之總固形物成分質量基準計,含有上述(A)鹼可溶性高分子:10質量%~90質量%;上述(B)具有乙烯性不飽和雙鍵之化合物:5質量%~70質量%;及上述(C)光聚合起始劑:0.01質量%~20質量%。 [2] The photosensitive resin composition according to [1], wherein the (A) alkali-soluble polymer is contained in an amount of 10% by mass to 90% by mass based on the total solid content of the photosensitive resin composition; The above (B) compound having an ethylenically unsaturated double bond: 5% by mass to 70% by mass; and the above (C) photopolymerization initiator: 0.01% by mass to 20% by mass.

[3]如[2]所記載之感光性樹脂組合物,其中以感光性樹脂組合物之總固形物成分質量基準計,進而含有(D)苯酚衍生物:0.001質量%~10質量%。 [3] The photosensitive resin composition according to [2], further comprising (D) a phenol derivative: 0.001% by mass to 10% by mass based on the total solid content of the photosensitive resin composition.

[4]如[3]所記載之感光性樹脂組合物,其中含有下述通式(I)所表示之化合物作為(D)苯酚衍生物: [4] The photosensitive resin composition according to [3], which comprises a compound represented by the following formula (I) as (D) a phenol derivative:

{式中,R1表示可經取代之直鏈烷基、分支烷基、芳基、環己 基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基,複數個R1可彼此相同亦可不同,m表示0~4之整數,n表示1以上之整數,並且,n為1時A為一價有機基,n為2以上時A表示二價以上之有機基、單鍵或包含共軛鍵之連結基}。 Wherein R 1 represents a linear alkyl group which may be substituted, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group which mediates a divalent linking group, a branched alkyl group which mediates a divalent linking group, and an intermediate divalent group The aryl group of the cyclohexyl group or the intermediate divalent linking group of the linking group, the plurality of R 1 's may be the same or different from each other, m represents an integer of 0 to 4, n represents an integer of 1 or more, and when n is 1, A is a The valence organic group, when n is 2 or more, A represents a divalent or higher organic group, a single bond or a linking group containing a conjugated bond}.

[5]如[3]或[4]所記載之感光性樹脂組合物,其中含有下述通式(II)所表示之化合物作為(D)苯酚衍生物: [5] The photosensitive resin composition as described in [3] or [4] which contains the compound represented by the following formula (II) as (D) phenol derivative:

{式中,R2表示可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基,並且R3、R4及R5各自獨立表示氫或者可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基}。 Wherein R 2 represents a linear alkyl group which may be substituted, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group which mediates a divalent linking group, a branched alkyl group which mediates a divalent linking group, and an intermediate divalent group An aryl group of a cyclohexyl group or an intermediate divalent linking group, and each of R 3 , R 4 and R 5 independently represents hydrogen or a substituted linear alkyl group, a branched alkyl group, an aryl group, a cyclohexyl group, or an intermediate a linear alkyl group of a valent linking group, a branched alkyl group of an intermediate divalent linking group, a cyclohexyl group of an intermediate divalent linking group or an aryl group of an intermediate divalent linking group}.

[6]如[3]或[4]所記載之感光性樹脂組合物,其中含有下述通式(III)所表示之化合物作為(D)苯酚衍生物:[化3] [6] The photosensitive resin composition according to [3] or [4], which contains a compound represented by the following formula (III) as (D) a phenol derivative: [Chemical 3]

{式中,R6及R7各自獨立表示可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基,複數個R6及R7可彼此相同亦可不同,p及q各自獨立表示0~4之整數,並且B表示單鍵或包含共軛鍵之連結基}。 Wherein R 6 and R 7 each independently represent a linear alkyl group, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group having an intermediate divalent linking group, and a branched alkyl group intervening a divalent linking group; a plurality of R 6 and R 7 may be the same or different from each other, and p and q each independently represent an integer of 0 to 4, and B represents a single group. A bond or a linker containing a conjugate bond}.

[7]一種感光性樹脂組合物,其係以感光性樹脂組合物之總固形物成分質量基準計,含有(A)鹼可溶性高分子:10質量%~90質量%;(B)具有乙烯性不飽和雙鍵之化合物:5質量%~70質量%;(C)光聚合起始劑:0.01質量%~20質量%;及(D)苯酚衍生物:0.001質量%~10質量%者,且含有選自由下述通式(II)所表示之化合物及下述通式(III)所表示之化合物所組成之群中的至少一種作為(D)苯酚衍生物: [7] A photosensitive resin composition containing (A) an alkali-soluble polymer: 10% by mass to 90% by mass based on the total solid content of the photosensitive resin composition; (B) having an ethyl group Compound of unsaturated double bond: 5% by mass to 70% by mass; (C) photopolymerization initiator: 0.01% by mass to 20% by mass; and (D) phenol derivative: 0.001% by mass to 10% by mass, and (D) a phenol derivative containing at least one selected from the group consisting of a compound represented by the following formula (II) and a compound represented by the following formula (III):

{式中,R2表示可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基,並且R3、R4及R5各自獨立表示氫或者可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基}, Wherein R 2 represents a linear alkyl group which may be substituted, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group which mediates a divalent linking group, a branched alkyl group which mediates a divalent linking group, and an intermediate divalent group An aryl group of a cyclohexyl group or an intermediate divalent linking group, and each of R 3 , R 4 and R 5 independently represents hydrogen or a substituted linear alkyl group, a branched alkyl group, an aryl group, a cyclohexyl group, or an intermediate a linear alkyl group of a valent linking group, a branched alkyl group of an intermediate divalent linking group, a cyclohexyl group of an intermediate divalent linking group or an aryl group of an intermediate divalent linking group},

{式中,R6及R7各自獨立表示可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基,複數個R6及R7可彼此相同亦可不同,p及q各自獨立表示0~4之整數,並且B表示單鍵或包含共軛鍵之連結基}。 Wherein R 6 and R 7 each independently represent a linear alkyl group, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group having an intermediate divalent linking group, and a branched alkyl group intervening a divalent linking group; a plurality of R 6 and R 7 may be the same or different from each other, and p and q each independently represent an integer of 0 to 4, and B represents a single group. A bond or a linker containing a conjugate bond}.

[8]如[6]或[7]所記載之感光性樹脂組合物,其中於上述式(III)中,B為單鍵。 [8] The photosensitive resin composition according to [6] or [7] wherein, in the above formula (III), B is a single bond.

[9]如[6]至[8]中任一項所記載之感光性樹脂組合物,其中於上述式(III)中,p=q=0。 [9] The photosensitive resin composition according to any one of [6] to [8] wherein p = q = 0 in the above formula (III).

[10]如[3]至[9]中任一項所記載之感光性樹脂組合物,其中含有與過氧自由基(peroxyradical)之反應速率常數為20Lmol-1‧sec-1以上之化合物作為(D)苯酚衍生物。 [10] The photosensitive resin composition according to any one of [3] to [9] wherein a compound having a reaction rate constant with peroxyradical of 20 Lmol -1 ‧ sec -1 or more is contained as (D) a phenol derivative.

[11]如[1]至[10]中任一項所記載之感光性樹脂組合物,其中(A)鹼 可溶性高分子之單體成分具有芳香族烴基。 [11] The photosensitive resin composition as described in any one of [1] to [10] wherein (A) a base The monomer component of the soluble polymer has an aromatic hydrocarbon group.

[12]如[1]至[11]中任一項所記載之感光性樹脂組合物,其中含有吖啶類作為(C)光聚合起始劑。 [12] The photosensitive resin composition according to any one of [1] to [11] which contains an acridine as (C) photopolymerization initiator.

[13]一種感光性樹脂積層體,其係於支撐層上積層包含如[1]至[12]中任一項所記載之感光性樹脂組合物之感光性樹脂層而成者。 [13] A photosensitive resin laminate in which a photosensitive resin layer containing the photosensitive resin composition according to any one of [1] to [12] is laminated on a support layer.

[14]一種抗蝕劑圖案之形成方法,其包含:將如[13]所記載之感光性樹脂積層體積層於基板上之積層步驟;將該感光性樹脂積層體之感光性樹脂層曝光之曝光步驟;及將該感光性樹脂層之未曝光部進行顯影去除的顯影步驟。 [14] A method of forming a resist pattern, comprising the step of laminating a photosensitive resin laminated layer layer as described in [13] on a substrate; and exposing the photosensitive resin layer of the photosensitive resin laminated body An exposure step; and a development step of developing and removing the unexposed portion of the photosensitive resin layer.

[15]如[14]所記載之抗蝕劑圖案之形成方法,其中藉由利用描繪圖案之直接描繪的曝光方法、或使光罩之圖像經過透鏡而投影的曝光方法進行上述曝光步驟。 [15] The method for forming a resist pattern according to [14], wherein the exposing step is performed by an exposure method of directly drawing a pattern or by an exposure method of projecting an image of the mask through a lens.

[16]如[15]所記載之抗蝕劑圖案之形成方法,其中藉由利用描繪圖案之直接描繪的曝光方法進行上述曝光步驟。 [16] The method for forming a resist pattern according to [15], wherein the exposure step is performed by an exposure method using direct drawing of a drawing pattern.

[17]如[1]至[12]中任一項所記載之感光性樹脂組合物,其係用於藉由利用描繪圖案直接描繪的曝光方法進行曝光步驟之抗蝕劑圖案之形成方法中。 [17] The photosensitive resin composition according to any one of [1] to [12], which is used in a method of forming a resist pattern by performing an exposure step by an exposure method directly drawing a drawing pattern .

藉由本發明,可提供一種即便於曝光時之焦點挪移時亦表現出高解析性之感光性樹脂積層體及用以形成該感光性樹脂積層體之感光性樹脂組合物,以及使用該感光性樹脂積層體之抗蝕劑圖案之形成方法及導體圖案之形成方法。其結果,即使因基板之翹曲及變形、曝光裝置之設定不良等而使曝光時之焦點之位置自基板表面挪移時,亦可於藉由蝕刻法形成電路時減少短路問題,於藉由鍍敷法形成電路時減少缺損、斷線、鍍敷不良等問題。 According to the present invention, it is possible to provide a photosensitive resin laminate which exhibits high resolution even when the focus is moved during exposure, and a photosensitive resin composition for forming the photosensitive resin laminate, and the use of the photosensitive resin A method of forming a resist pattern of a laminate and a method of forming a conductor pattern. As a result, even if the position of the focus at the time of exposure is shifted from the substrate surface due to warpage and deformation of the substrate, poor setting of the exposure device, or the like, the short-circuit problem can be reduced when the circuit is formed by the etching method, and plating can be performed by plating. When the circuit is formed by the method, the defects such as defects, disconnection, and poor plating are reduced.

以下,對用以實施本發明之例示形態(以下簡稱為「實施形態」)進行詳細說明。再者,本發明並不限定於以下之實施形態,可於其主旨之範圍內進行各種變形而實施。 Hereinafter, an exemplary embodiment (hereinafter simply referred to as "embodiment") for carrying out the present invention will be described in detail. The present invention is not limited to the embodiments described below, and various modifications can be made without departing from the spirit and scope of the invention.

[感光性樹脂組合物] [Photosensitive Resin Composition]

於實施形態中,感光性樹脂組合物具有如下特徵:於基板表面上形成包含該感光性樹脂組合物之感光性樹脂層並進行曝光及顯影所獲得的抗蝕劑圖案中,於將焦點位置聚焦於該基板表面並進行該曝光時之圖案解析度a、與將焦點位置聚焦於自該基板表面於該基板之厚度方向上向基板內側挪移300μm之位置並進行該曝光時之圖案解析度b之差未達15μm。藉此,即使因基板之翹曲及變形、曝光裝置之設定不良等而使曝光時之焦點之位置自基板表面挪移時,亦可於藉由蝕刻法形成電路時減少短路問題,於藉由鍍敷法形成電路時減少缺損、斷線、鍍敷不良等問題。圖案解析度a與圖案解析度b之差較佳為12μm以下,更佳為10μm以下。另一方面,就製造容易性、感度之下降較少等觀點而言,圖案解析度a與圖案解析度b之差較佳為0μm以上,更佳為5μm以上,進而較佳為7μm以上。再者,對於本說明書中之各種測定值而言,只要無特別說明,則是依據本發明之[實施例]項中揭示之方法或業者理解為與其相同之方法進行測定。 In the embodiment, the photosensitive resin composition is characterized in that a photosensitive resin layer containing the photosensitive resin composition is formed on the surface of the substrate and exposed and developed in a resist pattern, and the focus position is focused. The pattern resolution a at the time of the exposure on the surface of the substrate, and the focus position are focused on a position shifted by 300 μm from the surface of the substrate in the thickness direction of the substrate toward the inside of the substrate, and the pattern resolution b at the time of exposure is performed. The difference is less than 15 μm. Thereby, even if the position of the focus at the time of exposure is moved from the substrate surface due to warping and deformation of the substrate, poor setting of the exposure device, etc., the short circuit problem can be reduced when the circuit is formed by the etching method, by plating When the circuit is formed by the method, the defects such as defects, disconnection, and poor plating are reduced. The difference between the pattern resolution a and the pattern resolution b is preferably 12 μm or less, and more preferably 10 μm or less. On the other hand, the difference between the pattern resolution a and the pattern resolution b is preferably 0 μm or more, more preferably 5 μm or more, and still more preferably 7 μm or more from the viewpoints of ease of production and a decrease in sensitivity. In addition, the various measured values in the present specification are measured by the method disclosed in the [Examples] of the present invention or by the same method as the above, unless otherwise specified.

伴隨著近年來之電子機器之小型化、薄型化,配線之高密度化、可撓性印刷配線板之應用、進而多層化之需求不斷提高。並且隨著多層化之發展,表面之起伏逐漸增大,存在伴隨著曝光時之焦點挪移的解析性之劣化或線寬再現性之劣化之憂慮,其結果,短路不良或缺損、斷線、鍍敷不良之問題及無法形成所期望之銅線之問題日益變得重要。於大型基板中,因曝光時之吸附不良或面內之膜厚不均勻性 等而亦可能產生同樣之問題。因此發現,藉由著眼於將焦點位置聚焦於基板表面並進行曝光時之圖案解析度a、與將焦點位置聚焦於自該基板表面於該基板之厚度方向上向基板內側挪移300μm之位置(作為相對於上述表面之起伏量等焦點位置之挪移量為非常大之挪移量而設定的基準值)並進行該曝光時之圖案解析度b之差而設計感光性樹脂組合物,對於解決上述問題有效。即發現,選擇使用圖案解析度a與圖案解析度b之差包含於一定範圍內之特定之感光性樹脂組合物對於以下方面有效果:即使於近年來之配線高密度化、多層化之狀況下,亦減少短路不良或缺損、斷線、鍍敷不良之問題及無法形成所期望之銅線之問題。 With the miniaturization and thinning of electronic devices in recent years, there has been an increasing demand for higher density of wiring, application of flexible printed wiring boards, and multilayering. Further, with the development of the multilayer, the undulation of the surface is gradually increased, and there is a concern that the resolution of the focus shifts during exposure or the deterioration of the line width reproducibility is caused. As a result, short-circuit defects or defects, disconnection, plating The problem of poorly applied and the inability to form the desired copper wire is becoming increasingly important. In the large substrate, poor adsorption due to exposure or film thickness non-uniformity in the plane The same problem may occur. Therefore, it has been found that by focusing on the focus of the substrate on the surface of the substrate and performing the exposure, the degree of resolution a, and focusing the focus position on the substrate from the surface of the substrate in the thickness direction of the substrate by 300 μm (as It is effective to solve the above problem by designing a photosensitive resin composition with respect to the difference between the pattern resolutions b at the time of exposure, such as the amount of fluctuation in the focus position such as the amount of fluctuation of the surface, which is set to a very large shift amount. . In other words, it has been found that the specific photosensitive resin composition which is used in a specific range in which the difference between the pattern resolution a and the pattern resolution b is selected is effective in the following aspects: even in the case where the wiring is increased in density and multilayered in recent years. It also reduces the problem of poor short circuit or defect, wire breakage, poor plating, and the inability to form the desired copper wire.

再者,作為將圖案解析度a與圖案解析度b之差設定為上述特定範圍內的方法,並無特別限定,例如可列舉:對於感光性樹脂組合物之組成,關於各成分如下詳述般進行各種調整。 In addition, the method of setting the difference between the pattern resolution a and the pattern resolution b within the above-described specific range is not particularly limited, and for example, the composition of the photosensitive resin composition is as described below in detail. Make various adjustments.

於實施形態中,感光性樹脂組合物含有(A)鹼可溶性高分子、(B)具有乙烯性不飽和雙鍵之化合物、及(C)光聚合起始劑。感光性樹脂組合物較佳為以該感光性樹脂組合物之總固形物成分質量基準計,含有(A)鹼可溶性高分子:10質量%~90質量%;(B)具有乙烯性不飽和雙鍵之化合物:5質量%~70質量%;及(C)光聚合起始劑:0.01質量%~20質量%。以下,依序說明各成分。 In the embodiment, the photosensitive resin composition contains (A) an alkali-soluble polymer, (B) a compound having an ethylenically unsaturated double bond, and (C) a photopolymerization initiator. The photosensitive resin composition preferably contains (A) an alkali-soluble polymer: 10% by mass to 90% by mass based on the total solid content of the photosensitive resin composition; (B) having an ethylenically unsaturated double The compound of the bond: 5% by mass to 70% by mass; and (C) the photopolymerization initiator: 0.01% by mass to 20% by mass. Hereinafter, each component will be described in order.

<(A)鹼可溶性高分子> <(A) alkali soluble polymer>

於本發明中,(A)鹼可溶性高分子包含易溶於鹼性物質中之高分子。更具體而言,(A)鹼可溶性高分子中所含之羧基之量以酸當量計而為100~600,較佳為250~450。所謂酸當量,係指其分子中具有1當量之羧基之聚合物之質量(單位:克)。為了對感光性樹脂層賦予對鹼性水溶液之顯影性及剝離性,(A)鹼可溶性高分子中之羧基係必需的。就提高耐顯影性、解析性及密接性之觀點而言,較佳為將酸當量 設定為100以上。並且更佳為將酸當量設定為250以上。另一方面,就提高顯影性及剝離性之觀點而言,較佳為將酸當量設定為600以下。並且更佳為將酸當量設定為450以下。於本發明中,酸當量係藉由使用電位差滴定裝置以0.1mol/L之NaOH水溶液進行滴定之電位差滴定法而測定之值。 In the present invention, the (A) alkali-soluble polymer contains a polymer which is easily soluble in an alkaline substance. More specifically, the amount of the carboxyl group contained in the (A) alkali-soluble polymer is from 100 to 600, preferably from 250 to 450, in terms of acid equivalent. The acid equivalent refers to the mass (unit: gram) of a polymer having 1 equivalent of a carboxyl group in its molecule. In order to impart developability and releasability to an aqueous alkaline solution to the photosensitive resin layer, (A) a carboxyl group in the alkali-soluble polymer is required. From the viewpoint of improving development resistance, resolution, and adhesion, it is preferred to use an acid equivalent. Set to 100 or more. More preferably, the acid equivalent is set to 250 or more. On the other hand, from the viewpoint of improving developability and peelability, it is preferred to set the acid equivalent to 600 or less. More preferably, the acid equivalent is set to 450 or less. In the present invention, the acid equivalent is a value measured by a potentiometric titration method using a potentiometric titration apparatus to titrate with a 0.1 mol/L NaOH aqueous solution.

(A)鹼可溶性高分子之重量平均分子量較佳為5,000~500,000。就提高解析性及顯影性之觀點而言,較佳為將重量平均分子量設定為500,000以下。更佳為將重量平均分子量設定為300,000以下,進而較佳設定為200,000以下。另一方面,就控制顯影凝聚物之性狀、以及製成感光性樹脂積層體之情形時之邊緣熔合性及切割碎片性等未曝光膜之性狀之觀點而言,較佳為將重量平均分子量設定為5,000以上。更佳為將重量平均分子量設定為10,000以上,進而較佳為設定為20,000以上。所謂邊緣熔合性,係指作為感光性樹脂積層體而捲取成捲筒狀之情形時,感光性樹脂層(即包含感光性樹脂組合物之層)自捲筒之端面溢出之容易度。所謂切割碎片性,係指以切割器將未曝光膜切斷之情形時,碎片飛濺之容易度。若該碎片附著於感光性樹脂積層體之上表面等,則於後續之曝光步驟等中轉印至遮罩上,成為不良品之原因。 The weight average molecular weight of the (A) alkali-soluble polymer is preferably from 5,000 to 500,000. From the viewpoint of improving the resolution and developability, it is preferred to set the weight average molecular weight to 500,000 or less. More preferably, the weight average molecular weight is set to 300,000 or less, and more preferably 200,000 or less. On the other hand, from the viewpoint of controlling the properties of the developed coacervate and the properties of the unexposed film such as the edge fusion property and the dicing property when the photosensitive resin laminate is formed, it is preferred to set the weight average molecular weight. It is 5,000 or more. More preferably, the weight average molecular weight is set to 10,000 or more, and further preferably set to 20,000 or more. When the edge fusion property is wound into a roll shape as a photosensitive resin laminate, the ease of overflow of the photosensitive resin layer (that is, the layer containing the photosensitive resin composition) from the end surface of the roll. The term "cutting fragmentation" refers to the ease with which the chips are splashed when the unexposed film is cut by the cutter. When the chips adhere to the upper surface of the photosensitive resin laminate or the like, they are transferred to the mask in the subsequent exposure step or the like, which is a cause of defective products.

(A)鹼可溶性高分子較佳為由下述第一單體之至少一種以上及下述第二單體之至少一種以上所獲得之共聚物。 (A) The alkali-soluble polymer is preferably a copolymer obtained by at least one or more of the following first monomers and at least one or more of the following second monomers.

第一單體係分子中具有一個聚合性不飽和基之羧酸或酸酐。第一單體可分為具有芳香族烴基之第一單體、與不具有芳香族烴基之第一單體。作為具有芳香族烴基之第一單體,例如可列舉肉桂酸等。作為不具有芳香族烴基之第一單體,例如可列舉:(甲基)丙烯酸、反丁烯二酸、丁烯酸、伊康酸、順丁烯二酸酐、順丁烯二酸半酯等。尤其就製造容易性、顯影性之觀點而言,較佳為(甲基)丙烯酸。於本發明 中,所謂(甲基)丙烯酸係指丙烯酸及/或甲基丙烯酸。以下相同。 A carboxylic acid or anhydride having a polymerizable unsaturated group in the first single system molecule. The first monomer may be classified into a first monomer having an aromatic hydrocarbon group and a first monomer having no aromatic hydrocarbon group. Examples of the first monomer having an aromatic hydrocarbon group include cinnamic acid and the like. Examples of the first monomer having no aromatic hydrocarbon group include (meth)acrylic acid, fumaric acid, crotonic acid, itaconic acid, maleic anhydride, maleic acid half ester, and the like. . In particular, from the viewpoint of easiness of production and developability, (meth)acrylic acid is preferred. In the present invention The term "(meth)acrylic" means acrylic acid and/or methacrylic acid. The same is true below.

第二單體係非酸性、且分子中具有至少一個聚合性不飽和基之單體。第二單體可分為具有芳香族烴基之第二單體、與不具有芳香族烴基之第二單體。作為具有芳香族烴基之第二單體,例如可列舉:(甲基)丙烯酸苄酯、苯乙烯、苯乙烯衍生物等。作為不具有芳香族烴基之第二單體,例如可列舉:(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸正丙酯、(甲基)丙烯酸異丙酯、(甲基)丙烯酸正丁酯、(甲基)丙烯酸異丁酯、(甲基)丙烯酸第三丁酯、(甲基)丙烯酸-2-羥乙酯、(甲基)丙烯酸-2-羥丙酯,(甲基)丙烯酸-2-乙基己酯,乙烯醇之酯類、例如乙酸乙烯酯,(甲基)丙烯腈等。其中,較佳為(甲基)丙烯酸甲酯、(甲基)丙烯酸正丁酯、苯乙烯、(甲基)丙烯酸-2-乙基己酯及(甲基)丙烯酸苄酯。就提高抗蝕劑圖案之解析性及密接性之觀點而言,較佳為苯乙烯及(甲基)丙烯酸苄酯。又,就減小將曝光時之焦點位置聚焦於基板表面時、與使曝光時之焦點位置自基板表面挪移時之解析度之差的觀點而言,較佳為苯乙烯及(甲基)丙烯酸苄酯。 The second single system is a monomer that is non-acidic and has at least one polymerizable unsaturated group in the molecule. The second monomer may be classified into a second monomer having an aromatic hydrocarbon group and a second monomer having no aromatic hydrocarbon group. Examples of the second monomer having an aromatic hydrocarbon group include benzyl (meth)acrylate, styrene, and a styrene derivative. Examples of the second monomer having no aromatic hydrocarbon group include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, and isopropyl (meth)acrylate. N-butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate Ester, 2-ethylhexyl (meth)acrylate, ester of vinyl alcohol, such as vinyl acetate, (meth)acrylonitrile, and the like. Among them, preferred are methyl (meth)acrylate, n-butyl (meth)acrylate, styrene, 2-ethylhexyl (meth)acrylate, and benzyl (meth)acrylate. From the viewpoint of improving the resolution and adhesion of the resist pattern, styrene and benzyl (meth)acrylate are preferred. Further, from the viewpoint of reducing the difference in resolution between when the focus position at the time of exposure is focused on the substrate surface and when the focus position at the time of exposure is shifted from the substrate surface, styrene and (meth)acrylic acid are preferable. Benzyl ester.

(A)鹼可溶性高分子較佳為含有具有芳香族烴基之單體成分者。關於該(A)鹼可溶性高分子中之具有芳香族烴基之單體成分之含有比例,以所有單體成分之合計質量為基準,較佳為10質量%以上,更佳為20質量%以上,進而較佳為30質量%以上,尤佳為50質量%以上。作為上限,並無特別限定,較佳為95質量%以下,更佳為80質量%以下。 (A) The alkali-soluble polymer is preferably one containing a monomer component having an aromatic hydrocarbon group. The content ratio of the monomer component having an aromatic hydrocarbon group in the (A) alkali-soluble polymer is preferably 10% by mass or more, and more preferably 20% by mass or more based on the total mass of all the monomer components. Further, it is preferably 30% by mass or more, and particularly preferably 50% by mass or more. The upper limit is not particularly limited, but is preferably 95% by mass or less, and more preferably 80% by mass or less.

於較佳態樣中,(A)鹼可溶性高分子可含有具有源自(甲基)丙烯酸、(甲基)丙烯酸烷基酯及苯乙烯之結構之高分子,及/或具有源自(甲基)丙烯酸、(甲基)丙烯酸苄酯及(甲基)丙烯酸烷基酯之結構之高分子。 In a preferred embodiment, the (A) alkali-soluble polymer may contain a polymer having a structure derived from (meth)acrylic acid, an alkyl (meth)acrylate, and styrene, and/or having a source derived from (a) A polymer having a structure of acrylic acid, benzyl (meth) acrylate, and alkyl (meth) acrylate.

關於第一單體及第二單體之共聚合比例,以所有聚合成分質量 基準計,較佳為第一單體為10質量%~60質量%且第二單體為40質量%~90質量%,更佳為第一單體為15質量%~35質量%且第二單體為65質量%~85質量%。 Regarding the copolymerization ratio of the first monomer and the second monomer, with the mass of all the polymerization components Preferably, the first monomer is 10% by mass to 60% by mass and the second monomer is 40% by mass to 90% by mass, more preferably the first monomer is 15% by mass to 35% by mass and second. The monomer is from 65 mass% to 85% by mass.

(A)鹼可溶性高分子可單獨使用一種,或亦可混合使用兩種以上。於混合使用兩種以上之情形時,較佳為將兩種含有具有芳香族烴基之單體成分之鹼可溶性高分子混合使用,以及將含有具有芳香族烴基之單體成分之鹼可溶性高分子、與不含具有芳香族烴基之單體成分之鹼可溶性高分子混合使用。於後者之情形時,相對於(A)鹼可溶性高分子之全部,含有具有芳香族烴基之單體成分之鹼可溶性高分子之使用比例較佳為50質量%以上,更佳為70質量%以上,進而較佳為80質量%以上,更佳為90質量%以上。 (A) The alkali-soluble polymer may be used alone or in combination of two or more. When two or more types are used in combination, it is preferred to use two kinds of alkali-soluble polymers containing a monomer component having an aromatic hydrocarbon group, and an alkali-soluble polymer containing a monomer component having an aromatic hydrocarbon group, It is used in combination with an alkali-soluble polymer which does not contain a monomer component having an aromatic hydrocarbon group. In the case of the latter, the use ratio of the alkali-soluble polymer containing a monomer component having an aromatic hydrocarbon group to all of the (A) alkali-soluble polymer is preferably 50% by mass or more, and more preferably 70% by mass or more. Further, it is preferably 80% by mass or more, and more preferably 90% by mass or more.

(A)鹼可溶性高分子之合成較佳為藉由以下方式進行:於以丙酮、甲基乙基酮、異丙醇等溶劑將第一單體與第二單體之混合物稀釋之溶液中,添加適量之過氧化苯甲醯、偶氮異丁腈等自由基聚合起始劑,進行加熱攪拌。亦存在一面將混合物之一部分滴加至反應液中一面進行合成之情形。亦存在反應結束後進而添加溶劑,調整為所期望之濃度之情形。作為合成方法,除溶液聚合以外,亦可使用塊狀聚合、懸浮聚合或乳化聚合。 (A) the synthesis of the alkali-soluble polymer is preferably carried out by diluting a mixture of the first monomer and the second monomer in a solvent such as acetone, methyl ethyl ketone or isopropanol. An appropriate amount of a radical polymerization initiator such as benzamidine peroxide or azoisobutyronitrile is added and heated and stirred. There is also a case where a part of the mixture is added dropwise to the reaction liquid for synthesis. Further, after the completion of the reaction, a solvent is further added to adjust the concentration to a desired concentration. As the synthesis method, in addition to solution polymerization, bulk polymerization, suspension polymerization or emulsion polymerization can also be used.

(A)鹼可溶性高分子相對於感光性樹脂組合物之總固形物成分質量之比例較佳為10質量%~90質量%之範圍,更佳為30質量%~70質量%,進而較佳為40質量%~60質量%。就控制顯影時間之觀點而言,較佳為將(A)鹼可溶性高分子相對於感光性樹脂組合物之比例設定為90質量%以下。另一方面,就提高耐邊緣熔合性之觀點而言,較佳為將(A)鹼可溶性高分子相對於感光性樹脂組合物之比例設定為10質量%以上。 The ratio of the (A) alkali-soluble polymer to the total solid content of the photosensitive resin composition is preferably in the range of 10% by mass to 90% by mass, more preferably 30% by mass to 70% by mass, still more preferably 40% by mass to 60% by mass. In view of controlling the development time, the ratio of the (A) alkali-soluble polymer to the photosensitive resin composition is preferably 90% by mass or less. On the other hand, from the viewpoint of improving the edge-fusing resistance, the ratio of the (A) alkali-soluble polymer to the photosensitive resin composition is preferably 10% by mass or more.

<(B)具有乙烯性不飽和雙鍵之化合物> <(B) Compound having an ethylenically unsaturated double bond>

就硬化性及與(A)鹼可溶性高分子之相容性之觀點而言,較佳為(B)具有乙烯性不飽和雙鍵之化合物含有於分子內具有(甲基)丙烯醯基之化合物。(B)化合物中之(甲基)丙烯醯基之個數為1個以上即可。 From the viewpoint of curability and compatibility with the (A) alkali-soluble polymer, it is preferred that (B) a compound having an ethylenically unsaturated double bond contains a compound having a (meth) acrylonitrile group in the molecule. . (B) The number of (meth) acrylonitrile groups in the compound may be one or more.

作為具有1個(甲基)丙烯醯基之(B)化合物,例如可列舉:於聚環氧烷之單末端加成有(甲基)丙烯酸之化合物;或於聚環氧烷之單末端加成有(甲基)丙烯酸,且將另一末端加以烷基醚化或烯丙基醚化之化合物等。 Examples of the (B) compound having one (meth) acrylonitrile group include a compound obtained by adding a (meth)acrylic acid to a single terminal of a polyalkylene oxide; or a single terminal of a polyalkylene oxide. A compound obtained by forming (meth)acrylic acid and alkylating or allyl etherifying the other end.

作為此種化合物,例如可列舉:苯氧基六乙二醇單(甲基)丙烯酸酯,其為將聚乙二醇加成至苯基上之化合物之(甲基)丙烯酸酯;4-正壬基苯氧基七乙二醇二丙二醇(甲基)丙烯酸酯,其為將加成有平均2莫耳之環氧丙烷之聚丙二醇、與加成有平均7莫耳之環氧乙烷之聚乙二醇,加成至壬基苯酚上之化合物之(甲基)丙烯酸酯;4-正壬基苯氧基五乙二醇單丙二醇(甲基)丙烯酸酯,其為將加成有平均1莫耳之環氧丙烷之聚丙二醇、與加成有平均5莫耳之環氧乙烷之聚乙二醇,加成至壬基苯酚上之化合物之(甲基)丙烯酸酯;4-正壬基苯氧基八乙二醇(甲基)丙烯酸酯(例如東亞合成(股)製造之M-114),其為將加成有平均8莫耳之環氧乙烷之聚乙二醇加成至壬基苯酚上之化合物之丙烯酸酯等。 Examples of such a compound include phenoxy hexaethylene glycol mono(meth) acrylate which is a (meth) acrylate of a compound obtained by adding polyethylene glycol to a phenyl group; Nonylphenoxy heptaethylene glycol dipropylene glycol (meth) acrylate, which is an addition of 2 moles of propylene oxide to polypropylene glycol, and an average of 7 moles of ethylene oxide. Polyethylene glycol, (meth) acrylate of a compound added to nonylphenol; 4-n-decylphenoxypentaethylene glycol monopropylene glycol (meth) acrylate, which has an average of addition 1 molar propylene oxide polypropylene glycol, and polyethylene glycol with an average of 5 moles of ethylene oxide, (meth) acrylate added to the nonylphenol compound; Nonylphenoxy octaethylene glycol (meth) acrylate (for example, M-114 manufactured by Toagosei Co., Ltd.), which is a polyethylene glycol added with an average of 8 moles of ethylene oxide. An acrylate or the like which is a compound on the nonylphenol.

作為於分子內具有2個(甲基)丙烯醯基之化合物,例如可列舉:於環氧烷鏈之兩末端具有(甲基)丙烯醯基之化合物;或於環氧乙烷鏈與環氧丙烷鏈以無規或嵌段形式鍵結之環氧烷鏈之兩末端具有(甲基)丙烯醯基之化合物等。 Examples of the compound having two (meth)acryl fluorenyl groups in the molecule include a compound having a (meth)acryl fluorenyl group at both ends of the alkylene oxide chain; or an ethylene oxide chain and an epoxy group. A compound having a (meth) acrylonitrile group at both ends of an alkylene oxide chain in which a propane chain is bonded in a random or block form.

作為此種化合物,例如可列舉:四乙二醇二(甲基)丙烯酸酯、五乙二醇二(甲基)丙烯酸酯、六乙二醇二(甲基)丙烯酸酯、七乙二醇二(甲基)丙烯酸酯、八乙二醇二(甲基)丙烯酸酯、九乙二醇二(甲基)丙 烯酸酯、十乙二醇二(甲基)丙烯酸酯、於12莫耳之環氧乙烷鏈之兩末端具有(甲基)丙烯醯基之化合物等聚乙二醇(甲基)丙烯酸酯等,除此之外亦可列舉聚丙二醇二(甲基)丙烯酸酯、聚丁二醇二(甲基)丙烯酸酯等。作為於化合物中含有環氧乙烷基與環氧丙烷基之聚環氧烷二(甲基)丙烯酸酯化合物,例如可列舉:於加成有平均12莫耳之環氧丙烷之聚丙二醇之兩末端分別進而加成有平均3莫耳之環氧乙烷的二醇之二甲基丙烯酸酯,於加成有平均18莫耳之環氧丙烷之聚丙二醇之兩末端分別進而加成有平均15莫耳之環氧乙烷的二醇之二甲基丙烯酸酯等。 Examples of such a compound include tetraethylene glycol di(meth)acrylate, pentaethylene glycol di(meth)acrylate, hexaethylene glycol di(meth)acrylate, and heptaethylene glycol. (meth) acrylate, octaethylene glycol di(meth) acrylate, octaethylene glycol di(methyl) propyl Poly(ethylene glycol) (meth) acrylate such as a compound having a (meth) acrylonitrile group at both ends of a 12-mole ethylene oxide chain Other examples include polypropylene glycol di(meth)acrylate and polybutylene glycol di(meth)acrylate. Examples of the polyalkylene oxide di(meth)acrylate compound containing an oxirane group and an oxypropylene group in the compound include, for example, two kinds of polypropylene glycol having an average of 12 moles of propylene oxide added thereto. The ends are further added with a dimethacrylate of a diol having an average of 3 moles of ethylene oxide, and an addition of an average of 15 at the two ends of the polypropylene glycol having an average of 18 moles of propylene oxide. a diol of a molar ethylene oxide such as dimethacrylate.

作為於分子內具有2個(甲基)丙烯醯基之化合物之其他例,就解析性及密接性之觀點而言,較佳為藉由將雙酚A進行環氧烷改性而於兩末端具有(甲基)丙烯醯基之化合物。環氧烷改性有環氧乙烷改性、環氧丙烷改性、環氧丁烷改性、環氧戊烷改性、環氧己烷改性等。較佳為藉由將雙酚A進行環氧乙烷改性而於兩末端具有(甲基)丙烯醯基之化合物。作為此種化合物,例如可列舉:2,2-雙(4-((甲基)丙烯醯氧基二乙氧基)苯基)丙烷(例如新中村化學工業(股)製造之NK ester BPE-200)、2,2-雙(4-((甲基)丙烯醯氧基三乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基四乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基五乙氧基)苯基)丙烷(例如新中村化學工業(股)製造之NK ester BPE-500)、2,2-雙(4-((甲基)丙烯醯氧基六乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基七乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基八乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基九乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基十乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基十一乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基十二乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基十三乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基十四乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯 氧基十五乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧基十六乙氧基)苯基)丙烷等2,2-雙(4-((甲基)丙烯醯氧基聚乙氧基)苯基)丙烷等。進而,如於雙酚A之兩端分別加成有平均2莫耳之環氧丙烷與平均6莫耳之環氧乙烷之聚伸烷基二醇之二(甲基)丙烯酸酯、或於雙酚A之兩端分別加成有平均2莫耳之環氧丙烷與平均15莫耳之環氧乙烷之聚伸烷基二醇之二(甲基)丙烯酸酯等般,經環氧乙烷改性及環氧丙烷改性之化合物亦較佳。就進一步提高解析性、密接性及柔軟性之觀點而言,藉由將雙酚A進行環氧烷改性而於兩末端具有(甲基)丙烯醯基之化合物中之環氧乙烷之莫耳數較佳為10莫耳以上、30莫耳以下。 As another example of the compound having two (meth) acryloyl fluorenyl groups in the molecule, from the viewpoint of analyticity and adhesion, it is preferred to modify the bisphenol A at both ends by alkylene oxide modification. A compound having a (meth) acrylonitrile group. The alkylene oxide modification includes ethylene oxide modification, propylene oxide modification, butylene oxide modification, pentylene oxide modification, and hexylene oxide modification. A compound having a (meth) acrylonitrile group at both terminals by modifying bisphenol A with ethylene oxide is preferred. As such a compound, for example, 2,2-bis(4-((meth)propenyloxydiethoxy)phenyl)propane (for example, NK ester BPE manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) can be cited. 200), 2,2-bis(4-((meth)propenyloxytriethoxy)phenyl)propane, 2,2-bis(4-((methyl)propenyloxytetraethoxy) Phenyl)propane, 2,2-bis(4-((meth)propenyloxypentaethoxy)phenyl)propane (eg NK ester BPE-500, manufactured by Shin-Nakamura Chemical Industry Co., Ltd.) , 2,2-bis(4-((meth)propenyloxyhexaethoxy)phenyl)propane, 2,2-bis(4-((methyl)acryloxy)heptaethoxy) Phenyl)propane, 2,2-bis(4-((meth)propenyloxy octaethoxy)phenyl)propane, 2,2-bis(4-((methyl)propenyloxy) Ethoxy)phenyl)propane, 2,2-bis(4-((meth)propenyloxydecaethoxy)phenyl)propane, 2,2-bis(4-((meth)propene)醯oxyundecyloxy)phenyl)propane, 2,2-bis(4-((meth)propenyloxydodecyloxy)phenyl)propane, 2,2-bis(4- ((Meth)propenyloxytridecylethoxy)phenyl)propane, 2,2-bis(4-((meth)propenyloxytetradecyloxy)phenyl)propane, 2, 2-double (4 -((meth)acrylonitrile 2,2-bis(4-(4-(ethoxy))phenyl)propane, 2,2-bis(4-((meth)propenyloxyhexadecyloxy)phenyl)propane (Meth) propylene decyloxypolyethoxy)phenyl)propane or the like. Further, for example, a bis(meth) acrylate having an average of 2 moles of propylene oxide and an average of 6 moles of ethylene oxide of a polyalkylene glycol is added to both ends of bisphenol A, or The two ends of bisphenol A are respectively added with an average of 2 moles of propylene oxide and an average of 15 moles of ethylene oxide of a polyalkylene glycol bis(meth) acrylate, etc. Alkane-modified and propylene oxide-modified compounds are also preferred. From the viewpoint of further improving analyticity, adhesion, and flexibility, ethylene oxide in a compound having a (meth) acrylonitrile group at both terminals by modifying bisphenol A with an alkylene oxide The number of ears is preferably 10 m or more and 30 m or less.

例如,於一分子中具有超過2個(甲基)丙烯醯基之化合物可藉由以下方式獲得:作為中心骨架,於分子內具有3莫耳以上之可加成環氧烷基之基,於其上加成伸乙氧基、伸丙氧基、伸丁氧基等伸烷氧基而獲得醇,將該醇製成(甲基)丙烯酸酯。於該情形時,作為可成為中心骨架之化合物,例如可列舉:甘油、三羥甲基丙烷、季戊四醇、二季戊四醇、異氰尿酸酯環等。 For example, a compound having more than two (meth) acryloyl fluorenyl groups in one molecule can be obtained by using, as a central skeleton, an alkylene group having an alkyl group having 3 mol or more in a molecule. An alkoxy group such as an ethoxy group, a propoxy group, or a butoxy group is added to obtain an alcohol, and the alcohol is made into a (meth) acrylate. In this case, examples of the compound which can be a central skeleton include glycerin, trimethylolpropane, pentaerythritol, dipentaerythritol, and an isocyanurate ring.

作為此種化合物,例如可列舉:三羥甲基丙烷之環氧乙烷(EO)3莫耳改性三丙烯酸酯、三羥甲基丙烷之EO 6莫耳改性三丙烯酸酯、三羥甲基丙烷之EO 9莫耳改性三丙烯酸酯、三羥甲基丙烷之EO 12莫耳改性三丙烯酸酯等。作為此種化合物,例如可列舉:甘油之EO 3莫耳改性三丙烯酸酯(例如新中村化學工業(股)製造之A-GLY-3E)、甘油之EO 9莫耳改性三丙烯酸酯(例如新中村化學工業(股)製造之A-GLY-9E)、甘油之EO 6莫耳及環氧丙烷(PO)6莫耳改性三丙烯酸酯(A-GLY-0606PE)、甘油之EO 9莫耳PO 9莫耳改性三丙烯酸酯(A-GLY-0909PE)、季戊四醇之4 EO改性四丙烯酸酯(例如日本Sartomer(股)公司製造之SR-494)、季戊四醇之35 EO改性四丙烯酸酯(例如新中村化學工業(股)公司製造之NK ester ATM-35E)等。 Examples of such a compound include ethylene oxide (EO) 3 molar modified triacrylate of trimethylolpropane, EO 6 molar modified triacrylate of trimethylolpropane, and trishydroxyl EO 9 molar modified triacrylate of propane, EO 12 molar modified triacrylate of trimethylolpropane, and the like. Examples of such a compound include EO 3 molar modified triacrylate of glycerin (for example, A-GLY-3E manufactured by Shin-Nakamura Chemical Co., Ltd.), and EO 9 molar modified triacrylate of glycerin ( For example, A-GLY-9E manufactured by Xinzhongcun Chemical Industry Co., Ltd., EO 6 molar and propylene oxide (PO) 6 molar modified triacrylate (A-GLY-0606PE), EO 9 of glycerin Moer PO 9 Moer Modified Triacrylate (A-GLY-0909PE), 4 EO modified tetraacrylate of pentaerythritol (such as SR-494 manufactured by Sartomer Co., Ltd.), 35 EO modified 4 of pentaerythritol Acrylate (for example, NK ester ATM-35E manufactured by Shin-Nakamura Chemical Co., Ltd.).

除了上述化合物以外,可適宜使用以下列舉之化合物等。例如可列舉:1,6-己二醇二(甲基)丙烯酸酯、1,4-環己二醇二(甲基)丙烯酸酯、2-二(對羥苯基)丙烷二(甲基)丙烯酸酯、2,2-雙[(4-(甲基)丙烯醯氧基聚伸丙氧基)苯基]丙烷、2,2-雙[(4-(甲基)丙烯醯氧基聚伸丁氧基)苯基]丙烷、甘油三(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、聚氧丙基三羥甲基丙烷三(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、三羥甲基丙烷三縮水甘油醚三(甲基)丙烯酸酯、β-羥丙基-β'-(丙烯醯氧基)丙基鄰苯二甲酸酯、壬基苯氧基聚丙二醇(甲基)丙烯酸酯、壬基苯氧基聚丁二醇(甲基)丙烯酸酯、聚丙二醇單(甲基)丙烯酸酯等。進而亦可列舉如以下般之胺基甲酸酯化合物。例如可列舉:六亞甲基二異氰酸酯、甲苯二異氰酸酯或二異氰酸酯化合物(例如2,2,4-三甲基六亞甲基二異氰酸酯),與於一分子中具有羥基及(甲基)丙烯醯基之化合物,例如丙烯酸-2-羥丙酯、低聚丙二醇單甲基丙烯酸酯的胺基甲酸酯化合物。具體而言,有六亞甲基二異氰酸酯與低聚丙二醇單甲基丙烯酸酯(例如日本油脂(股)製造之Blemmer PP1000)之反應產物。又,亦可列舉:藉由聚丙二醇或聚己內酯進行改性之異三聚氰酸酯之二或三(甲基)丙烯酸酯等。又,例如亦可列舉:使作為二異氰酸酯與多元醇之聚加成物而獲得之胺基甲酸酯化合物之末端、與具有乙烯性不飽和雙鍵及羥基之化合物進行反應而獲得的胺基甲酸酯低聚物等。 In addition to the above compounds, the compounds listed below and the like can be suitably used. For example, 1,6-hexanediol di(meth)acrylate, 1,4-cyclohexanediol di(meth)acrylate, 2-bis(p-hydroxyphenyl)propane di(methyl) Acrylate, 2,2-bis[(4-(methyl)propenyloxypolypropoxy)phenyl]propane, 2,2-bis[(4-(methyl)propene oxime) Butoxy)phenyl]propane, tris(meth)acrylate, trimethylolpropane tri(meth)acrylate, polyoxypropyltrimethylolpropane tri(meth)acrylate, dipentaerythritol Penta(meth)acrylate, trimethylolpropane triglycidyl ether tri(meth)acrylate, β-hydroxypropyl-β'-(propylene decyloxy)propyl phthalate, hydrazine Phenoxypolypropylene glycol (meth) acrylate, nonyl phenoxy polybutylene glycol (meth) acrylate, polypropylene glycol mono (meth) acrylate, and the like. Further, a urethane compound as described below can also be mentioned. For example, hexamethylene diisocyanate, toluene diisocyanate or a diisocyanate compound (for example, 2,2,4-trimethylhexamethylene diisocyanate), and a hydroxyl group and (meth) propylene in one molecule are mentioned. A sulfhydryl compound such as hydroxypropyl acrylate or propylene glycol monomethacrylate urethane compound. Specifically, there is a reaction product of hexamethylene diisocyanate and oligomeric polypropylene glycol monomethacrylate (for example, Blemmer PP1000 manufactured by Nippon Oil & Fats Co., Ltd.). Further, examples thereof include di- or tri(meth)acrylates of isomeric cyanurate modified by polypropylene glycol or polycaprolactone. Further, for example, an amine group obtained by reacting a terminal of a urethane compound obtained as a polyaddition of a diisocyanate with a polyhydric alcohol with a compound having an ethylenically unsaturated double bond and a hydroxyl group may be mentioned. Formate oligomers, etc.

(B)具有乙烯性不飽和雙鍵之化合物相對於感光性樹脂組合物之總固形物成分質量之比例較佳為5質量%~70質量%。就感度、解析性及密接性之觀點而言,較佳為將該比例設定為5質量%以上。更佳為將該比例設定為20質量%以上,進而較佳為設定為30質量%以上。另一方面,就抑制邊緣熔合及硬化抗蝕劑之剝離延遲之觀點而言,較佳 為將該比例設定為70質量%以下。更佳為將該比例設定為50質量%以下。 (B) The ratio of the compound having an ethylenically unsaturated double bond to the total solid content of the photosensitive resin composition is preferably from 5% by mass to 70% by mass. From the viewpoints of sensitivity, resolution, and adhesion, the ratio is preferably set to 5% by mass or more. More preferably, the ratio is set to 20% by mass or more, and more preferably 30% by mass or more. On the other hand, from the viewpoint of suppressing the edge fusion and the peeling delay of the hardened resist, it is preferred The ratio is set to 70% by mass or less. More preferably, the ratio is set to 50% by mass or less.

<(C)光聚合起始劑> <(C) Photopolymerization initiator>

作為(C)光聚合起始劑,例如可列舉:六芳基聯咪唑化合物、N-芳基-α-胺基酸化合物、醌類、芳香族酮類、苯乙酮類、醯基氧化膦類、安息香或安息香醚類、二烷基縮酮類、9-氧硫類、二烷基胺基苯甲酸酯類、肟酯類、吖啶類、吡唑啉衍生物、N-芳基胺基酸之酯化合物、鹵素化合物等。 Examples of the (C) photopolymerization initiator include a hexaarylbiimidazole compound, an N-aryl-α-amino acid compound, an anthraquinone, an aromatic ketone, an acetophenone, and a fluorenylphosphine oxide. Class, benzoin or benzoin ethers, dialkyl ketals, 9-oxosulfur And dialkylamino benzoate, oxime ester, acridine, pyrazoline derivative, ester compound of N-arylamino acid, halogen compound, and the like.

作為六芳基聯咪唑化合物,例如可列舉:2-(鄰氯苯基)-4,5-二苯基聯咪唑、2,2',5-三-(鄰氯苯基)-4-(3,4-二甲氧基苯基)-4',5'-二苯基聯咪唑、2,4-雙-(鄰氯苯基)-5-(3,4-二甲氧基苯基)-二苯基聯咪唑、2,4,5-三-(鄰氯苯基)-二苯基聯咪唑、2-(鄰氯苯基)-雙-4,5-(3,4-二甲氧基苯基)-聯咪唑、2,2'-雙-(2-氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3-二氟甲基苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,4-二氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,5-二氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,6-二氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,4-三氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,5-三氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,6-三氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,4,5-三氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,4,6-三氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,4,5-四氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,4,6-四氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑、2,2'-雙-(2,3,4,5,6-五氟苯基)-4,4',5,5'-四-(3-甲氧基苯基)-聯咪唑等。 As the hexaarylbiimidazole compound, for example, 2-(o-chlorophenyl)-4,5-diphenylbiimidazole, 2,2',5-tris-(o-chlorophenyl)-4-( 3,4-dimethoxyphenyl)-4',5'-diphenylbiimidazole, 2,4-bis-(o-chlorophenyl)-5-(3,4-dimethoxyphenyl )-diphenylbiimidazole, 2,4,5-tris-(o-chlorophenyl)-diphenylbiimidazole, 2-(o-chlorophenyl)-bis-4,5-(3,4-di Methoxyphenyl)-biimidazole, 2,2'-bis-(2-fluorophenyl)-4,4',5,5'-tetra-(3-methoxyphenyl)-biimidazole, 2,2'-bis-(2,3-difluoromethylphenyl)-4,4',5,5'-tetra-(3-methoxyphenyl)-biimidazole, 2,2'- Bis-(2,4-difluorophenyl)-4,4',5,5'-tetra-(3-methoxyphenyl)-biimidazole, 2,2'-bis-(2,5- Difluorophenyl)-4,4',5,5'-tetra-(3-methoxyphenyl)-biimidazole, 2,2'-bis-(2,6-difluorophenyl)-4 , 4',5,5'-tetra-(3-methoxyphenyl)-biimidazole, 2,2'-bis-(2,3,4-trifluorophenyl)-4,4',5 , 5'-tetrakis-(3-methoxyphenyl)-biimidazole, 2,2'-bis-(2,3,5-trifluorophenyl)-4,4',5,5'-four -(3-methoxyphenyl)-biimidazole, 2,2'-bis-(2,3,6-trifluorophenyl)-4,4',5,5'-tetra-(3-A Oxyphenyl)-biimidazole, 2,2'-bis-(2,4,5-trifluorophenyl)-4,4',5,5'-tetra-(3 -Methoxyphenyl)-biimidazole, 2,2'-bis-(2,4,6-trifluorophenyl)-4,4',5,5'-tetra-(3-methoxybenzene Bis-diimidazole, 2,2'-bis-(2,3,4,5-tetrafluorophenyl)-4,4',5,5'-tetra-(3-methoxyphenyl)- Biimidazole, 2,2'-bis-(2,3,4,6-tetrafluorophenyl)-4,4',5,5'-tetra-(3-methoxyphenyl)-biimidazole, 2,2'-bis-(2,3,4,5,6-pentafluorophenyl)-4,4',5,5'-tetra-(3-methoxyphenyl)-biimidazole and the like.

作為N-芳基-α-胺基酸化合物,例如可列舉:N-苯基甘胺酸、N- 甲基-N-苯基甘胺酸、N-乙基-N-苯基甘胺酸等。尤其N-苯基甘胺酸之增感效果較好而較佳。 As the N-aryl-α-amino acid compound, for example, N-phenylglycine, N- Methyl-N-phenylglycine, N-ethyl-N-phenylglycine, and the like. In particular, the sensitizing effect of N-phenylglycine is better and better.

作為醌類,例如可列舉:2-乙基蒽醌、八乙基蒽醌、1,2-苯并蒽醌、2,3-苯并蒽醌、2-苯基蒽醌、2,3-二苯基蒽醌、1-氯蒽醌、2-氯蒽醌、2-甲基蒽醌、1,4-萘醌、9,10-菲醌、2-甲基-1,4-萘醌、9,10-菲醌、2-甲基-1,4-萘醌、2,3-二甲基蒽醌、3-氯-2-甲基蒽醌等。 Examples of the hydrazines include 2-ethyl hydrazine, octaethyl hydrazine, 1,2-benzopyrene, 2,3-benzopyrene, 2-phenyl fluorene, and 2,3-. Diphenylanthracene, 1-chloroindole, 2-chloroindole, 2-methylindole, 1,4-naphthoquinone, 9,10-phenanthrenequinone, 2-methyl-1,4-naphthoquinone 9,10-phenanthrenequinone, 2-methyl-1,4-naphthoquinone, 2,3-dimethylhydrazine, 3-chloro-2-methylindole, and the like.

作為芳香族酮類,例如可列舉:二苯甲酮、米其勒酮[4,4'-雙(二甲胺基)二苯甲酮]、4,4'-雙(二乙胺基)二苯甲酮、4-甲氧基-4'-二甲胺基二苯甲酮等。 Examples of the aromatic ketones include benzophenone, mischidone [4,4'-bis(dimethylamino)benzophenone], and 4,4'-bis(diethylamino). Benzophenone, 4-methoxy-4'-dimethylaminobenzophenone, and the like.

作為苯乙酮類,例如可列舉:2-羥基-2-甲基-1-苯基丙烷-1-酮、1-(4-異丙基苯基)-2-羥基-2-甲基丙烷-1-酮、1-(4-十二烷基苯基)-2-羥基-2-甲基丙烷-1-酮、4-(2-羥基乙氧基)-苯基(2-羥基-2-丙基)酮、1-羥基環己基苯基酮、2-苄基-2-二甲胺基-1-(4-啉基苯基)-丁酮-1、2-甲基-1-[4-(甲硫基)苯基]-2-啉基-丙酮-1等。作為苯乙酮類之市售品,例如可列舉:Ciba Specialty Chemicals公司製造之Irgacure 907、Irgacure 369及Irgacure 379。 Examples of the acetophenones include 2-hydroxy-2-methyl-1-phenylpropan-1-one and 1-(4-isopropylphenyl)-2-hydroxy-2-methylpropane. 1-ketone, 1-(4-dodecylphenyl)-2-hydroxy-2-methylpropan-1-one, 4-(2-hydroxyethoxy)-phenyl (2-hydroxy- 2-propyl) ketone, 1-hydroxycyclohexyl phenyl ketone, 2-benzyl-2-dimethylamino-1-(4- Phenylphenyl)-butanone-1, 2-methyl-1-[4-(methylthio)phenyl]-2- Orolinyl-acetone-1 and the like. As a commercial item of acetophenone, Irgacure 907, Irgacure 369 and Irgacure 379 by Ciba Specialty Chemicals company are mentioned, for example.

作為醯基氧化膦類,例如可列舉:2,4,6-三甲基苄基二苯基氧化膦、雙(2,4,6-三甲基苯甲醯基)-氧化膦、雙(2,6-二甲氧基苯甲醯基)-2,4,4-三甲基-戊基氧化膦等。作為醯基氧化膦類之市售品,例如可列舉:BASF公司製造之Lucirin TPO及Ciba Specialty Chemicals公司製造之Irgacure 819。 Examples of the fluorenylphosphine oxides include 2,4,6-trimethylbenzyldiphenylphosphine oxide, bis(2,4,6-trimethylbenzylidene)phosphine oxide, and bis ( 2,6-Dimethoxybenzylidene)-2,4,4-trimethyl-pentylphosphine oxide, and the like. Examples of the commercially available fluorenylphosphine oxides include Lucirin TPO manufactured by BASF Corporation and Irgacure 819 manufactured by Ciba Specialty Chemicals.

作為安息香或安息香醚類,例如可列舉:安息香、安息香乙醚、安息香苯醚、甲基安息香、乙基安息香等。 Examples of the benzoin or benzoin ethers include benzoin, benzoin ethyl ether, benzoin phenyl ether, methyl benzoin, and ethyl benzoin.

作為二烷基縮酮類,例如可列舉苯偶醯二甲基縮酮、苯偶醯二乙基縮酮等。 Examples of the dialkyl ketal include benzoin dimethyl ketal and benzoin diethyl ketal.

作為9-氧硫類,例如可列舉:2,4-二乙基-9-氧硫、2,4- 二異丙基-9-氧硫、2-氯-9-氧硫等。 9-oxosulfur For the class, for example, 2,4-diethyl-9-oxosulfur 2,4-diisopropyl-9-oxosulfur 2-chloro-9-oxosulfur Wait.

作為二烷基胺基苯甲酸酯類,例如可列舉:二甲胺基苯甲酸乙酯、二乙胺基苯甲酸乙酯、對二甲胺基苯甲酸乙酯、4-(二甲胺基)苯甲酸-2-乙基己酯等。 Examples of the dialkylamino benzoate include ethyl dimethylaminobenzoate, ethyl diethylaminobenzoate, ethyl p-dimethylaminobenzoate, and 4-(dimethylamino). ) 2-ethylhexyl benzoate and the like.

作為肟酯類,例如可列舉:1-苯基-1,2-丙二酮-2-O-苯甲醯基肟、1-苯基-1,2-丙二酮-2-(O-乙氧基羰基)肟等。作為肟酯類之市售品,例如可列舉:Ciba Specialty Chemicals公司製造之CGI-325、Irgacure OXE01及Irgacure OXE02。 Examples of the oxime esters include 1-phenyl-1,2-propanedione-2-O-benzimidoxime, 1-phenyl-1,2-propanedione-2-(O- Ethoxycarbonyl) hydrazine and the like. As a commercial item of an oxime ester, CGI-325, Irgacure OXE01, and Irgacure OXE02 by Ciba Specialty Chemicals company are mentioned, for example.

作為吖啶類,例如可列舉:1,7-雙(9,9'-吖啶基)庚烷、9-苯基吖啶、9-甲基吖啶、9-乙基吖啶、9-氯乙基吖啶、9-甲氧基吖啶、9-乙氧基吖啶、9-(4-甲基苯基)吖啶、9-(4-乙基苯基)吖啶、9-(4-正丙基苯基)吖啶、9-(4-正丁基苯基)吖啶、9-(4-第三丁基苯基)吖啶、9-(4-甲氧基苯基)吖啶、9-(4-乙氧基苯基)吖啶、9-(4-乙醯基苯基)吖啶、9-(4-二甲胺基苯基)吖啶、9-(4-氯苯基)吖啶、9-(4-溴苯基)吖啶、9-(3-甲基苯基)吖啶、9-(3-第三丁基苯基)吖啶、9-(3-乙醯基苯基)吖啶、9-(3-二甲胺基苯基)吖啶、9-(3-二乙胺基苯基)吖啶、9-(3-氯苯基)吖啶、9-(3-溴苯基)吖啶、9-(2-吡啶基)吖啶、9-(3-吡啶基)吖啶、9-(4-吡啶基)吖啶等。該等之中,就感度、解析性、獲取性等方面而言,較佳為1,7-雙(9,9'-吖啶基)庚烷或9-苯基吖啶。 Examples of the acridines include 1,7-bis(9,9'-acridinyl)heptane, 9-phenyl acridine, 9-methyl acridine, 9-ethyl acridine, and 9- Chloroethyl acridine, 9-methoxyacridine, 9-ethoxy acridine, 9-(4-methylphenyl)acridine, 9-(4-ethylphenyl)acridine, 9- (4-n-propylphenyl) acridine, 9-(4-n-butylphenyl)acridine, 9-(4-t-butylphenyl)acridine, 9-(4-methoxybenzene Acridine, 9-(4-ethoxyphenyl)acridine, 9-(4-ethylphenylphenyl)acridine, 9-(4-dimethylaminophenyl)acridine, 9- (4-chlorophenyl) acridine, 9-(4-bromophenyl)acridine, 9-(3-methylphenyl)acridine, 9-(3-tert-butylphenyl)acridine, 9-(3-Ethylphenyl) acridine, 9-(3-dimethylaminophenyl) acridine, 9-(3-diethylaminophenyl) acridine, 9-(3-chloro Phenyl) acridine, 9-(3-bromophenyl)acridine, 9-(2-pyridyl)acridine, 9-(3-pyridyl)acridine, 9-(4-pyridyl)acridine Wait. Among these, in terms of sensitivity, resolution, availability, and the like, 1,7-bis(9,9'-acridinyl)heptane or 9-phenylacridine is preferred.

作為吡唑啉衍生物,例如可列舉:1-(4-第三丁基-苯基)-3-苯乙烯基-5-苯基-吡唑啉、1-苯基-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡唑啉、1,5-雙-(4-第三丁基-苯基)-3-(4-第三丁基-苯乙烯基)-吡唑啉、1-(4-第三辛基-苯基)-3-苯乙烯基-5-苯基-吡唑啉、1-苯基-3-(4-第三丁基-苯乙烯基)-5-(4-乙氧基-苯基)-吡唑啉、1-苯基-3-(4-第三辛基-苯乙烯基)-5-(4-第三辛基-苯基)-吡唑啉、1,5-雙-(4-第三辛基-苯基)-3-(4-第三辛基-苯乙烯基)-吡唑啉、1-(4-十二烷基-苯基)-3-苯乙烯 基-5-苯基-吡唑啉、1-苯基-3-(4-十二烷基-苯乙烯基)-5-(4-十二烷基-苯基)-吡唑啉、1-(4-十二烷基-苯基)-3-(4-十二烷基-苯乙烯基)-5-(4-十二烷基-苯基)-吡唑啉、1-(4-第三辛基-苯基)-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡唑啉、1-(4-第三丁基-苯基)-3-(4-第三辛基-苯乙烯基)-5-(4-第三辛基-苯基)-吡唑啉、1-(4-十二烷基-苯基)-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡唑啉、1-(4-第三丁基-苯基)-3-(4-十二烷基-苯乙烯基)-5-(4-十二烷基-苯基)-吡唑啉、1-(4-十二烷基-苯基)-3-(4-第三辛基-苯乙烯基)-5-(4-第三辛基-苯基)-吡唑啉、1-(4-第三辛基-苯基)-3-(4-十二烷基-苯乙烯基)-5-(4-十二烷基-苯基)-吡唑啉、1-(2,4-二丁基-苯基)-3-(4-十二烷基-苯乙烯基)-5-(4-十二烷基-苯基)-吡唑啉等。 Examples of the pyrazoline derivative include 1-(4-t-butyl-phenyl)-3-styryl-5-phenyl-pyrazoline and 1-phenyl-3-(4- Tert-butyl-styryl-5-(4-tert-butyl-phenyl)-pyrazoline, 1,5-bis-(4-tert-butyl-phenyl)-3-(4 -T-butyl-styryl)-pyrazoline, 1-(4-t-octyl-phenyl)-3-styryl-5-phenyl-pyrazoline, 1-phenyl-3 -(4-t-butyl-styryl)-5-(4-ethoxy-phenyl)-pyrazoline, 1-phenyl-3-(4-th-octyl-styryl) -5-(4-t-octyl-phenyl)-pyrazoline, 1,5-bis-(4-t-octyl-phenyl)-3-(4-trioctyl-styryl )-pyrazoline, 1-(4-dodecyl-phenyl)-3-styrene 5-phenyl-pyrazoline, 1-phenyl-3-(4-dodecyl-styryl)-5-(4-dodecyl-phenyl)-pyrazoline, 1 -(4-dodecyl-phenyl)-3-(4-dodecyl-styryl)-5-(4-dodecyl-phenyl)-pyrazoline, 1-(4 -Third octyl-phenyl)-3-(4-t-butyl-styryl)-5-(4-t-butyl-phenyl)-pyrazoline, 1-(4-third Butyl-phenyl)-3-(4-t-octyl-styryl)-5-(4-th-octyl-phenyl)-pyrazoline, 1-(4-dodecyl- Phenyl)-3-(4-t-butyl-styryl)-5-(4-t-butyl-phenyl)-pyrazoline, 1-(4-t-butyl-phenyl) -3-(4-dodecyl-styryl)-5-(4-dodecyl-phenyl)-pyrazoline, 1-(4-dodecyl-phenyl)-3- (4-tert-octyl-styryl)-5-(4-th-octyl-phenyl)-pyrazoline, 1-(4-t-octyl-phenyl)-3-(4- Dodecyl-styryl)-5-(4-dodecyl-phenyl)-pyrazoline, 1-(2,4-dibutyl-phenyl)-3-(4-12 Alkyl-styryl)-5-(4-dodecyl-phenyl)-pyrazoline and the like.

作為吡唑啉衍生物,進而可列舉:1-苯基-3-(3,5-二-第三丁基-苯乙烯基)-5-(3,5-二-第三丁基-苯基)-吡唑啉、1-苯基-3-(2,6-二-第三丁基-苯乙烯基)-5-(2,6-二-第三丁基-苯基)-吡唑啉、1-苯基-3-(2,5-二-第三丁基-苯乙烯基)-5-(2,5-二-第三丁基-苯基)-吡唑啉、1-苯基-3-(2,6-二-正丁基-苯乙烯基)-5-(2,6-二-正丁基-苯基)-吡唑啉、1-(3,4-二-第三丁基-苯基)-3-苯乙烯基-5-苯基-吡唑啉、1-(3,5-二-第三丁基-苯基)-3-苯乙烯基-5-苯基-吡唑啉、1-(4-第三丁基-苯基)-3-(3,5-二-第三丁基-苯基)-5-苯基-吡唑啉、1-(3,5-二-第三丁基-苯基)-3-(3,5-二-第三丁基-苯乙烯基)-5-(3,5-二-第三丁基-苯基)-吡唑啉、1-(4-(5-第三丁基-苯并唑-2-基)苯基)-3-苯乙烯基-5-苯基-吡唑啉、1-(4-(苯并唑-2-基)苯基)-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡唑啉、1-(4-(4-第三丁基-苯并唑-2-基)苯基)-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡唑啉、1-(4-(5-第三辛基-苯并唑-2-基)苯基)-3-苯乙烯基-5-苯基-吡唑啉、1-(4-(苯并唑-2-基)苯基)-3-(4-第三辛基-苯乙烯基)-5-(4-第三辛基-苯基)-吡唑啉、1-(4-(5-第三辛基-苯并唑-2-基)苯 基)-3-(4-第三辛基-苯乙烯基)-5-(4-第三辛基-苯基)-吡唑啉、1-(4-(5-十二烷基-苯并唑-2-基)苯基)-3-苯乙烯基-5-苯基-吡唑啉、1-(4-(苯并唑-2-基)苯基)-3-(4-十二烷基-苯乙烯基)-5-(4-十二烷基-苯基)-吡唑啉、1-(4-(5-十二烷基-苯并唑-2-基)苯基)-3-(4-十二烷基-苯乙烯基)-5-(4-十二烷基-苯基)-吡唑啉、1-(4-(5-第三辛基-苯并唑-2-基)苯基)-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡唑啉等。 Further, as the pyrazoline derivative, 1-phenyl-3-(3,5-di-t-butyl-styryl)-5-(3,5-di-t-butyl-benzene) -Pyrazoline, 1-phenyl-3-(2,6-di-t-butyl-styryl)-5-(2,6-di-t-butyl-phenyl)-pyridyl Oxazoline, 1-phenyl-3-(2,5-di-t-butyl-styryl)-5-(2,5-di-t-butyl-phenyl)-pyrazoline, 1 -phenyl-3-(2,6-di-n-butyl-styryl)-5-(2,6-di-n-butyl-phenyl)-pyrazoline, 1-(3,4- Di-t-butyl-phenyl)-3-styryl-5-phenyl-pyrazoline, 1-(3,5-di-t-butyl-phenyl)-3-styryl- 5-phenyl-pyrazoline, 1-(4-t-butyl-phenyl)-3-(3,5-di-t-butyl-phenyl)-5-phenyl-pyrazoline, 1-(3,5-di-t-butyl-phenyl)-3-(3,5-di-t-butyl-styryl)-5-(3,5-di-t-butyl -phenyl)-pyrazoline, 1-(4-(5-tert-butyl-benzo) Zin-2-yl)phenyl)-3-styryl-5-phenyl-pyrazoline, 1-(4-(benzoxyl) Zin-2-yl)phenyl)-3-(4-t-butyl-styryl)-5-(4-t-butyl-phenyl)-pyrazoline, 1-(4-(4) - tert-butyl-benzo Zin-2-yl)phenyl)-3-(4-t-butyl-styryl)-5-(4-t-butyl-phenyl)-pyrazoline, 1-(4-(5) - third octyl-benzo Zin-2-yl)phenyl)-3-styryl-5-phenyl-pyrazoline, 1-(4-(benzoxyl) Zin-2-yl)phenyl)-3-(4-t-octyl-styryl)-5-(4-th-octyl-phenyl)-pyrazoline, 1-(4-(5) - third octyl-benzo Zin-2-yl)phenyl)-3-(4-t-octyl-styryl)-5-(4-th-octyl-phenyl)-pyrazoline, 1-(4-(5) -dodecyl-benzo Zin-2-yl)phenyl)-3-styryl-5-phenyl-pyrazoline, 1-(4-(benzoxyl) Zin-2-yl)phenyl)-3-(4-dodecyl-styryl)-5-(4-dodecyl-phenyl)-pyrazoline, 1-(4-(5 -dodecyl-benzo Zin-2-yl)phenyl)-3-(4-dodecyl-styryl)-5-(4-dodecyl-phenyl)-pyrazoline, 1-(4-(5 - third octyl-benzo Zyridin-2-yl)phenyl)-3-(4-t-butyl-styryl)-5-(4-t-butyl-phenyl)-pyrazoline and the like.

作為吡唑啉衍生物,進而可列舉:1-(4-(5-第三丁基-苯并唑-2-基)苯基)-3-(4-第三辛基-苯乙烯基)-5-(4-第三辛基-苯基)-吡唑啉、1-(4-(5-十二烷基-苯并唑-2-基)苯基)-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡唑啉、1-(4-(5-第三丁基-苯并唑-2-基)苯基)-3-(4-十二烷基-苯乙烯基)-5-(4-十二烷基-苯基)-吡唑啉、1-(4-(5-十二烷基-苯并唑-2-基)苯基)-3-(4-第三辛基-苯乙烯基)-5-(4-第三辛基-苯基)-吡唑啉、1-(4-(5-第三辛基-苯并唑-2-基)苯基)-3-(4-十二烷基-苯乙烯基)-5-(4-十二烷基-苯基)-吡唑啉、1-(4-(4,6-二丁基-苯并唑-2-基)苯基)-3-(4-十二烷基-苯乙烯基)-5-(4-十二烷基-苯基)-吡唑啉、1-(4-(苯并唑-2-基)苯基)-3-(3,5-二-第三丁基苯乙烯基)-5-(3,5-二-第三丁基-苯基)-吡唑啉、1-(4-(苯并唑-2-基)苯基)-3-(2,6-二-第三丁基-苯乙烯基)-5-(2,6-二-第三丁基-苯基)-吡唑啉、1-(4-(苯并唑-2-基)苯基)-3-(2,5-二-第三丁基-苯乙烯基)-5-(2,5-二-第三丁基-苯基)-吡唑啉、1-(4-(苯并唑-2-基)苯基)-3-(2,6-二-正丁基-苯乙烯基)-5-(2,6-二-正丁基-苯基)-吡唑啉、1-(4-(4,6-二-第三丁基-苯并唑-2-基)苯基)-3-苯乙烯基-5-苯基-吡唑啉、1-(4-(5,7-二-第三丁基-苯并唑-2-基)苯基)-3-苯乙烯基-5-苯基-吡唑啉、1-(4-(5-第三丁基-苯并唑-2-基)苯基)-3-(3,5-二-第三丁基-苯乙烯基)-5-苯基-吡唑啉、1-(4-(4,6-二-第三丁基-苯并唑-2-基)苯基)-3-(3,5-二-第三丁基-苯乙烯基)-5-(3,5-二-第三丁基-苯基)-吡唑啉、1-苯基-3-(4-第三丁基-苯乙烯基)-5-(4-胺基-苯 基)-吡唑啉、1-苯基-3-(4-第三丁基-苯乙烯基)-5-(4-N-乙基-苯基)-吡唑啉及1-苯基-3-(4-第三丁基-苯乙烯基)-5-(4-N,N-二乙基-苯基)-吡唑啉等。 Further, as the pyrazoline derivative, 1-(4-(5-tert-butyl-benzo) Zin-2-yl)phenyl)-3-(4-t-octyl-styryl)-5-(4-th-octyl-phenyl)-pyrazoline, 1-(4-(5) -dodecyl-benzo Zin-2-yl)phenyl)-3-(4-t-butyl-styryl)-5-(4-t-butyl-phenyl)-pyrazoline, 1-(4-(5) - tert-butyl-benzo Zin-2-yl)phenyl)-3-(4-dodecyl-styryl)-5-(4-dodecyl-phenyl)-pyrazoline, 1-(4-(5 -dodecyl-benzo Zin-2-yl)phenyl)-3-(4-t-octyl-styryl)-5-(4-th-octyl-phenyl)-pyrazoline, 1-(4-(5) - third octyl-benzo Zin-2-yl)phenyl)-3-(4-dodecyl-styryl)-5-(4-dodecyl-phenyl)-pyrazoline, 1-(4-(4) ,6-dibutyl-benzo Zin-2-yl)phenyl)-3-(4-dodecyl-styryl)-5-(4-dodecyl-phenyl)-pyrazoline, 1-(4-(benzene and Zin-2-yl)phenyl)-3-(3,5-di-t-butylstyryl)-5-(3,5-di-t-butyl-phenyl)-pyrazoline, 1-(4-(benzo) Zin-2-yl)phenyl)-3-(2,6-di-t-butyl-styryl)-5-(2,6-di-t-butyl-phenyl)-pyrazoline , 1-(4-(benzoxyl) Zin-2-yl)phenyl)-3-(2,5-di-tert-butyl-styryl)-5-(2,5-di-tert-butyl-phenyl)-pyrazoline , 1-(4-(benzoxyl) Zin-2-yl)phenyl)-3-(2,6-di-n-butyl-styryl)-5-(2,6-di-n-butyl-phenyl)-pyrazoline, 1 -(4-(4,6-di-t-butyl-benzo-benzo) Zin-2-yl)phenyl)-3-styryl-5-phenyl-pyrazoline, 1-(4-(5,7-di-t-butyl-benzo) Zin-2-yl)phenyl)-3-styryl-5-phenyl-pyrazoline, 1-(4-(5-tert-butyl-benzo) Zin-2-yl)phenyl)-3-(3,5-di-t-butyl-styryl)-5-phenyl-pyrazoline, 1-(4-(4,6-di-) Third butyl-benzo Zin-2-yl)phenyl)-3-(3,5-di-t-butyl-styryl)-5-(3,5-di-t-butyl-phenyl)-pyrazoline , 1-phenyl-3-(4-t-butyl-styryl)-5-(4-amino-phenyl)-pyrazoline, 1-phenyl-3-(4-third -styryl)-5-(4-N-ethyl-phenyl)-pyrazoline and 1-phenyl-3-(4-t-butyl-styryl)-5-(4- N,N-Diethyl-phenyl)-pyrazoline and the like.

作為吡唑啉衍生物,進而可列舉:1-苯基-3-(4-聯苯基)-5-(4-正丁基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-第三丁基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-異丁基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-正戊基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-異戊基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-新戊基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-己基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-庚基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-正辛基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-第三辛基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-壬基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-癸基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-十一烷基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-十二烷基-苯基)-吡唑啉等。 Further, as the pyrazoline derivative, 1-phenyl-3-(4-biphenyl)-5-(4-n-butyl-phenyl)-pyrazoline, 1-phenyl-3- (4-biphenyl)-5-(4-t-butyl-phenyl)-pyrazoline, 1-phenyl-3-(4-biphenyl)-5-(4-isobutyl- Phenyl)-pyrazoline, 1-phenyl-3-(4-biphenyl)-5-(4-n-pentyl-phenyl)-pyrazoline, 1-phenyl-3-(4- Biphenyl)-5-(4-isopentyl-phenyl)-pyrazoline, 1-phenyl-3-(4-biphenyl)-5-(4-neopentyl-phenyl)- Pyrazoline, 1-phenyl-3-(4-biphenyl)-5-(4-hexyl-phenyl)-pyrazoline, 1-phenyl-3-(4-biphenyl)-5 -(4-heptyl-phenyl)-pyrazoline, 1-phenyl-3-(4-biphenyl)-5-(4-n-octyl-phenyl)-pyrazoline, 1-benzene 3-(4-biphenyl)-5-(4-t-octyl-phenyl)-pyrazoline, 1-phenyl-3-(4-biphenyl)-5-(4- Mercapto-phenyl)-pyrazoline, 1-phenyl-3-(4-biphenyl)-5-(4-indolyl-phenyl)-pyrazoline, 1-phenyl-3-( 4-biphenyl)-5-(4-undecyl-phenyl)-pyrazoline, 1-phenyl-3-(4-biphenyl)-5-(4-dodecyl- Phenyl)-pyrazoline and the like.

上述列舉之吡唑啉衍生物之中,就密接性及抗蝕劑圖案之矩形性之觀點而言,較佳為使用選自由1-苯基-3-(4-第三丁基-苯乙烯基)-5-(4-第三丁基-苯基)-吡唑啉、1-苯基-3-(4-聯苯基)-5-(4-第三丁基-苯基)-吡唑啉及1-苯基-3-(4-聯苯基)-5-(4-第三辛基-苯基)-吡唑啉所組成之群中之至少一種。 Among the above-mentioned pyrazoline derivatives, from the viewpoint of the adhesion and the rectangularity of the resist pattern, it is preferred to use a substrate selected from 1-phenyl-3-(4-t-butyl-styrene). 5-(4-tert-butyl-phenyl)-pyrazoline, 1-phenyl-3-(4-biphenyl)-5-(4-t-butyl-phenyl)- At least one of a group consisting of pyrazoline and 1-phenyl-3-(4-biphenyl)-5-(4-thanooctyl-phenyl)-pyrazoline.

作為N-芳基胺基酸之酯化合物,例如可列舉:N-苯基甘胺酸之甲酯、N-苯基甘胺酸之乙酯、N-苯基甘胺酸之正丙酯、N-苯基甘胺酸之異丙酯、N-苯基甘胺酸之1-丁酯、N-苯基甘胺酸之2-丁酯、N-苯基甘胺酸之第三丁酯、N-苯基甘胺酸之戊酯、N-苯基甘胺酸之己酯、N-苯基甘胺酸之戊酯、N-苯基甘胺酸之辛酯等。 Examples of the ester compound of the N-arylamino acid include methyl ester of N-phenylglycine, ethyl ester of N-phenylglycine, and n-propyl N-phenylglycine. Isopropyl ester of N-phenylglycine, 1-butyl ester of N-phenylglycine, 2-butyl ester of N-phenylglycine, and third butyl ester of N-phenylglycine And amyl ester of N-phenylglycine, hexyl ester of N-phenylglycine, amyl ester of N-phenylglycine, octyl ester of N-phenylglycine, and the like.

作為鹵素化合物,例如可列舉:溴戊烷、溴異戊烷、溴異丁烯、二溴乙烷、二苯基溴甲烷、苄基溴、二溴甲烷、三溴甲基苯基 碸、四溴化碳、磷酸三(2,3-二溴丙基)酯、三氯乙醯胺、碘戊烷、碘異丁烷、1,1,1-三氯-2,2-雙(對氯苯基)乙烷、氯化三化合物、二烯丙基錪化合物等,尤佳為三溴甲基苯基碸。 Examples of the halogen compound include bromopentane, bromoisopentane, bromoisobutylene, dibromoethane, diphenylbromomethane, benzyl bromide, dibromomethane, tribromomethylphenylhydrazine, and carbon tetrabromide. Tris(2,3-dibromopropyl) phosphate, trichloroacetamide, iodopentane, iodoisobutane, 1,1,1-trichloro-2,2-bis(p-chlorophenyl)B Alkane, chlorination A compound, a diallyl hydrazine compound or the like is particularly preferably tribromomethylphenyl hydrazine.

上述列舉之(C)光聚合起始劑可單獨使用亦可併用兩種以上。該等(C)光聚合起始劑之中,就感光性樹脂組合物之感度、解析性等觀點而言,較佳為使用選自由六芳基聯咪唑化合物、N-芳基-α-胺基酸化合物、醌類、吖啶類及吡唑啉衍生物所組成之群中之至少一種,更佳為使用選自由六芳基聯咪唑化合物、N-芳基-α-胺基酸化合物及吖啶類所組成之群中之至少一種。就感光性樹脂組合物之感度、解析性等觀點,抑制曝光時之焦點挪移時之解析度之劣化之觀點,或抑制曝光時之焦點挪移時之鄰接之抗蝕劑線間之間隙部分之狹小化之觀點而言,進而較佳為使用吖啶類。 The (C) photopolymerization initiators listed above may be used singly or in combination of two or more. Among these (C) photopolymerization initiators, from the viewpoints of sensitivity and resolution of the photosensitive resin composition, etc., it is preferred to use a compound selected from a hexaarylbiimidazole compound and an N-aryl-α-amine. At least one selected from the group consisting of a basic acid compound, an anthracene, an acridine, and a pyrazoline derivative, more preferably a compound selected from the group consisting of a hexaarylbiimidazole compound, an N-aryl-α-amino acid compound, and At least one of the group consisting of acridines. From the viewpoints of sensitivity, resolution, and the like of the photosensitive resin composition, the viewpoint of deterioration of resolution at the time of focus shift during exposure or the narrowing of a gap portion between adjacent resist lines at the time of focus shift during exposure is suppressed. From the viewpoint of chemistry, it is further preferred to use an acridine.

(C)光聚合起始劑相對於感光性樹脂組合物之總固形物成分質量之比例較佳為0.01質量%~20質量%。就獲得良好之感度之觀點而言,較佳為將該比例設定為0.01質量%以上。該比例更佳為設定為0.1質量%以上,進而較佳為設定為0.5質量%以上。另一方面,就獲得較高之解析性且抑制於顯影液中之凝聚性之觀點而言,較佳為將該比例設定為20質量%以下。該比例更佳為設定為10質量%以下。 The ratio of the (C) photopolymerization initiator to the total solid content of the photosensitive resin composition is preferably from 0.01% by mass to 20% by mass. From the viewpoint of obtaining a good sensitivity, the ratio is preferably set to 0.01% by mass or more. The ratio is more preferably set to 0.1% by mass or more, and further preferably set to 0.5% by mass or more. On the other hand, from the viewpoint of obtaining high resolution and suppressing cohesiveness in the developer, it is preferred to set the ratio to 20% by mass or less. The ratio is more preferably set to 10% by mass or less.

於使用六芳基聯咪唑化合物作為(C)光聚合起始劑之情形時,相對於感光性樹脂組合物之總固形物成分質量,該六芳基聯咪唑化合物之含量較佳為0.1質量%~15質量%。就獲得良好之感度之觀點而言,較佳為將該調配量設定為0.1質量%以上。該調配量更佳為設定為1質量%以上,尤佳為設定為3質量%以上。另一方面,就獲得較高之解析性且抑制於顯影液中之凝聚性之觀點而言,較佳為將該調配量設定為15質量%以下。該調配量更佳為設定為10質量%以下,尤佳為設定為6質量%以下。 When the hexaarylbiimidazole compound is used as the (C) photopolymerization initiator, the content of the hexaarylbiimidazole compound is preferably 0.1% by mass based on the total solid content of the photosensitive resin composition. ~15% by mass. From the viewpoint of obtaining good sensitivity, it is preferred to set the blending amount to 0.1% by mass or more. The blending amount is more preferably 1% by mass or more, and particularly preferably 3% by mass or more. On the other hand, from the viewpoint of obtaining high resolution and suppressing cohesiveness in the developer, it is preferred to set the blending amount to 15% by mass or less. The blending amount is more preferably set to 10% by mass or less, and particularly preferably set to 6% by mass or less.

又,於使用N-芳基-α-胺基酸化合物作為(C)光聚合起始劑之情形時,相對於感光性樹脂組合物之總固形物成分質量,該N-芳基-α-胺基酸化合物之含量較佳為0.001質量%~5質量%。就獲得良好之感度之觀點而言,較佳為將該調配量設定為0.001質量%以上。該調配量更佳為設定為0.01質量%以上,尤佳為設定為0.1質量%以上。另一方面,就獲得較高之解析性且提高色相穩定性之觀點而言,較佳為將該調配量設定為5質量%以下。該調配量更佳為設定為1質量%以下,尤佳為設定為0.5質量%以下。 Further, in the case where an N-aryl-α-amino acid compound is used as the (C) photopolymerization initiator, the N-aryl-α- is relative to the total solid component mass of the photosensitive resin composition. The content of the amino acid compound is preferably from 0.001% by mass to 5% by mass. From the viewpoint of obtaining a good sensitivity, it is preferred to set the blending amount to 0.001% by mass or more. The blending amount is more preferably 0.01% by mass or more, and particularly preferably 0.1% by mass or more. On the other hand, from the viewpoint of obtaining high resolution and improving hue stability, it is preferred to set the blending amount to 5% by mass or less. The blending amount is more preferably 1% by mass or less, and particularly preferably 0.5% by mass or less.

進而,於使用吖啶類作為(C)光聚合起始劑之情形時,相對於感光性樹脂組合物之總固形物成分質量,吖啶類之含量較佳為0.01質量%~5質量%。就獲得良好之感度之觀點而言,較佳為將該調配量設定為0.01質量%以上。該調配量更佳為設定為0.1質量%以上,尤佳為設定為0.2質量%以上。另一方面,就獲得矩形之抗蝕劑形狀且提高色相穩定性之觀點而言,該調配量較佳為設定為5質量%以下。該調配量更佳為設定為3質量%以下,尤佳為設定為2質量%以下。又,就減小使曝光時之焦點之位置於基板表面上聚焦時、與使曝光時之焦點之位置自基板表面挪移時的解析度之差的觀點而言,設定為上述範圍之調配量亦較佳。 Further, when acridine is used as the (C) photopolymerization initiator, the content of the acridine is preferably 0.01% by mass to 5% by mass based on the total solid content of the photosensitive resin composition. From the viewpoint of obtaining good sensitivity, it is preferred to set the blending amount to 0.01% by mass or more. The blending amount is more preferably 0.1% by mass or more, and particularly preferably 0.2% by mass or more. On the other hand, from the viewpoint of obtaining a rectangular resist shape and improving hue stability, the blending amount is preferably set to 5% by mass or less. The blending amount is more preferably set to 3% by mass or less, and particularly preferably set to 2% by mass or less. Further, from the viewpoint of reducing the difference between the resolution when the position of the focus at the time of exposure is focused on the substrate surface and the position of the focus at the time of exposure from the substrate surface, the amount of the setting is also set to the above range. Preferably.

<(D)苯酚衍生物> <(D) phenol derivative>

於實施形態中,感光性樹脂組合物較佳為進而含有(D)苯酚衍生物。其中,感光性樹脂組合物較佳為含有下述通式(I)所表示之化合物作為(D)苯酚衍生物:[化6] In the embodiment, the photosensitive resin composition preferably further contains (D) a phenol derivative. Among them, the photosensitive resin composition preferably contains a compound represented by the following formula (I) as (D) a phenol derivative: [Chem. 6]

{式中,R1表示可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基,複數個R1可彼此相同亦可不同,m表示0~4之整數,n表示1以上之整數,並且,n為1時A為一價有機基,n為2以上時A表示二價以上之有機基、單鍵或包含共軛鍵之連結基}。就抑制感光性樹脂組合物之感度下降之觀點、及不受焦點位置之影響而維持良好之解析度之觀點而言,通式(I)所表示之化合物優異。就相同之觀點而言,n較佳為2以上之整數。 Wherein R 1 represents a linear alkyl group which may be substituted, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group which mediates a divalent linking group, a branched alkyl group which mediates a divalent linking group, and an intermediate divalent group The aryl group of the cyclohexyl group or the intermediate divalent linking group of the linking group, the plurality of R 1 's may be the same or different from each other, m represents an integer of 0 to 4, n represents an integer of 1 or more, and when n is 1, A is a The valence organic group, when n is 2 or more, A represents a divalent or higher organic group, a single bond or a linking group containing a conjugated bond}. The compound represented by the formula (I) is excellent in terms of suppressing the sensitivity of the photosensitive resin composition and maintaining a good resolution without being affected by the focus position. From the same viewpoint, n is preferably an integer of 2 or more.

作為通式(I)所表示之化合物,較佳為含有選自由下述通式(II)所表示之化合物: The compound represented by the formula (I) preferably contains a compound selected from the group consisting of the following formula (II):

{式中,R2表示可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介 二價連結基之環己基或中介二價連結基之芳基,並且R3、R4及R5各自獨立表示氫或可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基}、及下述通式(III)所表示之化合物: Wherein R 2 represents a linear alkyl group which may be substituted, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group which mediates a divalent linking group, a branched alkyl group which mediates a divalent linking group, and an intermediate divalent group An aryl group of a cyclohexyl group or an intermediate divalent linking group, and each of R 3 , R 4 and R 5 independently represents hydrogen or a substituted linear alkyl group, a branched alkyl group, an aryl group, a cyclohexyl group, or an intermediate a linear alkyl group of a valent linking group, a branched alkyl group of an intermediate divalent linking group, a cyclohexyl group of an intermediate divalent linking group or an aryl group of an intermediate divalent linking group, and a compound represented by the following formula (III) :

{式中,R6及R7各自獨立表示可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基,複數個R6及R7可彼此相同亦可不同,p及q各自獨立表示0~4之整數,並且B表示單鍵或包含共軛鍵之連結基}所組成之群中之至少一種,更佳為含有通式(III)所表示之化合物。再者,作為通式(II)所表示之化合物,將相當於通式(III)所表示之化合物除外。 Wherein R 6 and R 7 each independently represent a linear alkyl group, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group having an intermediate divalent linking group, and a branched alkyl group intervening a divalent linking group; a plurality of R 6 and R 7 may be the same or different from each other, and p and q each independently represent an integer of 0 to 4, and B represents a single group. At least one of the group consisting of a bond or a linking group containing a conjugated bond is more preferably a compound represented by the formula (III). Further, the compound represented by the formula (II) is excluded from the compound represented by the formula (III).

分別就提高感光性樹脂組合物之解析性之觀點、抑制曝光時之焦點挪移時的解析性之劣化之觀點、抑制曝光時之焦點挪移時的抗蝕劑線與抗蝕劑線之間的間隙部分之狹小化之觀點、及抑制感度下降之觀點而言,通式(II)所表示之化合物及通式(III)所表示之化合物尤其優異。 The viewpoint of improving the resolution of the photosensitive resin composition, the viewpoint of suppressing the deterioration of the resolution at the time of focus shift during exposure, and the gap between the resist line and the resist line when the focus shift during exposure is suppressed. The compound represented by the formula (II) and the compound represented by the formula (III) are particularly excellent from the viewpoint of the narrowness of the partial reduction and the decrease in the suppression sensitivity.

對於通式(II)所表示之化合物,分別就提高感光性樹脂組合物之解析性之觀點、抑制曝光時之焦點挪移時的解析性之劣化之觀點、抑 制曝光時之焦點挪移時的抗蝕劑線與抗蝕劑線之間的間隙部分之狹小化之觀點、及抑制感度下降之觀點而言,較佳為於式(II)中R2、R3、R4及R5中之至少1個具有芳香環。就相同之觀點而言,通式(II)所表示之化合物較佳為具有2核以上之苯酚核。 From the viewpoint of improving the resolution of the photosensitive resin composition, the viewpoint of suppressing the deterioration of the resolution at the time of focus shift during exposure, and the prevention of the resist during the focus shift during exposure, respectively, the compound represented by the formula (II) From the viewpoint of narrowing the gap portion between the agent line and the resist line and suppressing the decrease in sensitivity, it is preferable that at least R 2 , R 3 , R 4 and R 5 in the formula (II) One has an aromatic ring. From the same viewpoint, the compound represented by the formula (II) is preferably a phenol core having two or more cores.

就相同之觀點而言,通式(II)所表示之化合物之羥基濃度較佳為0.10mol/100g~0.75mol/100g。又,就相同之觀點而言,較佳為於上述通式(II)中,R2中之至少1個為直鏈或分支烷基、苄基、1-或2-苯基乙基、或者可經羥基或烷基取代之苯硫基。並且,作為較佳之烷基,例如可列舉:甲基、乙基、正丙基、異丙基、正丁基、第二丁基、異丁基、第三丁基等。 From the same viewpoint, the hydroxyl group concentration of the compound represented by the formula (II) is preferably from 0.10 mol/100 g to 0.75 mol/100 g. Further, from the same viewpoint, it is preferred that in the above formula (II), at least one of R 2 is a linear or branched alkyl group, a benzyl group, a 1- or 2-phenylethyl group, or a phenylthio group which may be substituted with a hydroxyl group or an alkyl group. Further, preferred examples of the alkyl group include a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, a second butyl group, an isobutyl group, and a t-butyl group.

就相同之觀點而言,通式(II)所表示之化合物之分子量較佳為約130~約1000,更佳為約130~約600,進而較佳為約130~約400,尤佳為約180~約400。就相同之觀點而言,通式(II)所表示之化合物較佳為具有約1.02~約1.12之比重、或約155℃以上(例如約208℃以上)之熔點,或相對於水而為難溶性且相對於甲醇、丙酮、甲苯等有機溶劑而為易溶性,或於使用時為固體(例如粉末、結晶等)或液體。 From the same viewpoint, the molecular weight of the compound represented by the formula (II) is preferably from about 130 to about 1,000, more preferably from about 130 to about 600, still more preferably from about 130 to about 400, and most preferably about 180 ~ about 400. From the same viewpoint, the compound represented by the formula (II) preferably has a specific gravity of from about 1.02 to about 1.12, or a melting point of about 155 ° C or higher (for example, about 208 ° C or higher), or is poorly soluble with respect to water. Further, it is easily soluble with respect to an organic solvent such as methanol, acetone or toluene, or is a solid (for example, powder, crystal, etc.) or a liquid at the time of use.

作為通式(II)所表示之化合物,例如可列舉:4,4'-硫代雙(6-第三丁基-間甲酚)、4,4'-亞丁基雙(3-甲基-6-第三丁基苯酚)、1,1,3-三(2-甲基-4-羥基-5-第三丁基苯基)丁烷、苯乙烯化苯酚(例如川口化學工業(股)製造之Antage SP)、三苄基苯酚(例如川口化學工業(股)製造之TBP、具有1~3個苄基之苯酚)等。 Examples of the compound represented by the formula (II) include 4,4′-thiobis(6-t-butyl-m-cresol) and 4,4′-butylenebis(3-methyl-). 6-tert-butylphenol), 1,1,3-tris(2-methyl-4-hydroxy-5-t-butylphenyl)butane, styrenated phenol (eg Kawaguchi Chemical Industry Co., Ltd.) Antage SP) manufactured, tribenzyl phenol (for example, TBP manufactured by Kawaguchi Chemical Industry Co., Ltd., phenol having 1 to 3 benzyl groups), and the like.

於通式(III)所表示之化合物中,B表示單鍵或包含共軛鍵之連結基。包含共軛鍵之連結基較佳為由C、N、O、S等形成之共軛鍵結性連結基,更佳為伸烯基、伸炔基、伸芳基、二價之芳香族雜環、偶氮及亞胺、以及該等之一個以上與N之組合等基。 In the compound represented by the formula (III), B represents a single bond or a linking group containing a conjugated bond. The linking group containing a conjugated bond is preferably a conjugated linking group formed of C, N, O, S or the like, more preferably an alkenyl group, an alkynyl group, an extended aryl group or a divalent aromatic group. a ring, an azo, and an imine, and a combination of one or more of these and N.

對於通式(III)所表示之化合物,就提高感光性樹脂組合物之解析 性之觀點、抑制曝光時之焦點挪移時的解析性之劣化之觀點、抑制曝光時之焦點挪移時的抗蝕劑線與抗蝕劑線之間的間隙部分之狹小化之觀點、及抑制感度下降之觀點而言,較佳為式(III)中B為單鍵。 For the compound represented by the formula (III), the resolution of the photosensitive resin composition is improved. From the viewpoint of the nature, the viewpoint of suppressing the deterioration of the resolution at the time of focus shift during exposure, the viewpoint of suppressing the narrowing of the gap portion between the resist line and the resist line at the time of focus shift during exposure, and the suppression sensitivity From the viewpoint of the decrease, it is preferred that B in the formula (III) is a single bond.

對於通式(III)所表示之化合物,就相同之觀點而言,較佳為於式(III)中p=q=0,尤佳為聯苯酚。 From the same viewpoint, the compound represented by the formula (III) is preferably p = q = 0 in the formula (III), and particularly preferably biphenol.

於實施形態中,作為(D)苯酚衍生物,可進而含有通式(II)及通式(III)各自所表示之化合物以外之化合物。作為通式(II)及通式(III)各自所表示之化合物以外之化合物,例如可列舉:2,6-二-第三丁基-4-甲基苯酚、2,5-二-第三戊基對苯二酚、2,5-二-第三丁基對苯二酚、2,2'-亞甲基雙(4-甲基-6-第三丁基苯酚)、雙(2-羥基-3-第三丁基-5-乙基苯基)甲烷、三乙二醇-雙[3-(3-第三丁基-5-甲基-4-羥基苯基)丙酸酯]、1,6-己二醇-雙[3-(3,5-二-第三丁基-4-羥基苯基)丙酸酯]、季戊四醇基-四[3-(3,5-二-第三丁基-4-羥基苯基)丙酸酯]、2,2-硫代-二伸乙基雙[3-(3,5-二-第三丁基-4-羥基苯基)丙酸酯]、十八烷基-3-(3,5-二-第三丁基-4-羥基苯基)丙酸酯、N,N'-六亞甲基雙(3,5-二-第三丁基-4-羥基-苯丙醯胺)、3,5-二-第三丁基-4-羥基苄基膦酸酯-二乙酯、1,3,5-三甲基-2,4,6-三(3,5-二-第三丁基-4-羥基苄基)苯、異氰尿酸三(3,5-二-第三丁基-4-羥基苄基)酯等。 In the embodiment, the (D) phenol derivative may further contain a compound other than the compound represented by the formula (II) and the formula (III). Examples of the compound other than the compound represented by each of the formula (II) and the formula (III) include 2,6-di-tert-butyl-4-methylphenol and 2,5-di-third. Pentohydroquinone, 2,5-di-t-butyl hydroquinone, 2,2'-methylenebis(4-methyl-6-tert-butylphenol), double (2- Hydroxy-3-t-butyl-5-ethylphenyl)methane, triethylene glycol-bis[3-(3-t-butyl-5-methyl-4-hydroxyphenyl)propionate] 1,6-hexanediol-bis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate], pentaerythritol-tetraki [3-(3,5-di-) Tert-butyl-4-hydroxyphenyl)propionate], 2,2-thio-di-extension ethyl bis[3-(3,5-di-t-butyl-4-hydroxyphenyl)propane Acid ester], octadecyl-3-(3,5-di-t-butyl-4-hydroxyphenyl)propionate, N,N'-hexamethylenebis(3,5-di- Third butyl-4-hydroxy-phenylpropanamide), 3,5-di-t-butyl-4-hydroxybenzylphosphonate-diethyl ester, 1,3,5-trimethyl-2 , 4,6-tris(3,5-di-t-butyl-4-hydroxybenzyl)benzene, tris(3,5-di-t-butyl-4-hydroxybenzyl) isocyanurate, etc. .

作為實施形態中之(D)苯酚衍生物與過氧自由基之反應速率常數,較佳為20L‧mol-1‧sec-1以上(更佳為30L‧mol-1‧sec-1以上,進而較佳為40L‧mol-1‧sec-1以上)之化合物,且較佳為500L‧mol-1‧sec-1以下(更佳為300L‧mol-1‧sec-1以下,進而較佳為200L‧mol-1‧sec-1以下)之化合物。 The reaction rate constant of the (D) phenol derivative and the peroxy radical in the embodiment is preferably 20 L ‧ mol -1 ‧ sec -1 or more (more preferably 30 L ‧ mol -1 ‧ sec -1 or more, and further Preferably, it is a compound of 40 L ‧ mol -1 ‧ sec -1 or more, and is preferably 500 L ‧ mol -1 ‧ sec -1 or less (more preferably 300 L ‧ mol -1 ‧ sec -1 or less, further preferably 200 L ‧ mol -1 ‧ sec -1 or less of the compound.

此處,關於如上述之(D)苯酚衍生物之選擇是否對圖案解析度a與圖案解析度b之差之值造成影響,進而是否對於近年來之配線高密度化、多層化之狀況下亦減少短路不良或缺損、斷線、鍍敷不良之問題 及無法形成所期望之銅線之問題的感光性樹脂組合物之選擇造成影響,其詳細之機制並雖不明確,但可如以下般考慮。 Here, whether the selection of the (D) phenol derivative as described above affects the value of the difference between the pattern resolution a and the pattern resolution b, and whether or not the wiring is increased in density and multilayered in recent years. Reduce the problem of poor short circuit or defect, wire breakage, poor plating The selection of the photosensitive resin composition which does not cause the problem of the desired copper wire affects, and the detailed mechanism is not clear, but can be considered as follows.

關於苯酚衍生物之抗氧化作用,可認為就與自由基種之反應性之方面、及與自由基種反應後生成之苯氧基自由基之穩定性之方面考慮,存在最適點。例如,相對於苯酚之OH基而為鄰位之取代基越大,苯氧基自由基變得越穩定。另一方面,若該鄰位取代基之位阻(steric hindrance)過大,則與自由基種之反應性變低。又,位阻之程度之最適值根據經氧化之化學種之特性(易被氧化)而有所不同。 Regarding the antioxidant action of the phenol derivative, it is considered that there is an optimum point in terms of the reactivity with the radical species and the stability of the phenoxy radical generated after the reaction with the radical species. For example, the larger the substituent which is ortho to the OH group of phenol, the more stable the phenoxy radical becomes. On the other hand, if the steric hindrance of the ortho substituent is too large, the reactivity with the radical species becomes low. Moreover, the optimum value of the degree of steric hindrance varies depending on the characteristics of the oxidized chemical species (easy to be oxidized).

此處,實施形態中之感光性樹脂組合物為光自由基聚合性,故而為了捕捉可能導致解析度劣化之過氧自由基,對(D)苯酚衍生物要求與自由基種之高反應性。 Here, since the photosensitive resin composition in the embodiment is photoradical polymerizable, the (D) phenol derivative is required to have high reactivity with a radical species in order to capture peroxy radicals which may cause deterioration in resolution.

於綜合考慮以上各種要素之情形時,作為(D)苯酚衍生物,較佳為通式(I)所表示之化合物,進而較佳為選自由通式(II)所表示之化合物及通式(III)所表示之化合物所組成之群中之至少一種。對於通式(II)所表示之化合物,可認為由於鄰位取代基之位阻經調整為最適,故與過氧自由基之反應性及苯氧基自由基之穩定性兩者優異。又,通式(III)所表示之化合物中,可認為若鄰位取代基之位阻較小,則與過氧自由基之反應性較高,聯苯酚型苯氧基自由基因苯氧基自由基之共振結構多而變穩定。 In view of the above various factors, the (D) phenol derivative is preferably a compound represented by the formula (I), and more preferably a compound represented by the formula (II) and a formula ( III) at least one of the group consisting of the compounds represented. With respect to the compound represented by the formula (II), it is considered that since the steric hindrance of the ortho substituent is adjusted to be optimum, both the reactivity with the peroxy radical and the stability of the phenoxy radical are excellent. Further, in the compound represented by the formula (III), it is considered that if the steric hindrance of the ortho substituent is small, the reactivity with the peroxy radical is high, and the biphenol type phenoxy free gene phenoxy is free. The resonance structure of the base is many and stable.

作為上述作為通式(II)或通式(III)所表示之化合物之具體例而揭示之化合物、且滿足上述反應速率常數之範圍者,例如1,1,3-三(2-甲基-4-羥基-5-第三丁基苯基)丁烷為45.4L‧mol-1‧sec-1,4,4'-亞丁基雙(3-甲基-6-第三丁基苯酚)為48.6L‧mol-1‧sec-1The compound disclosed as a specific example of the compound represented by the formula (II) or the formula (III) and satisfying the range of the above reaction rate constant, for example, 1,1,3-tris(2-methyl-) 4-hydroxy-5-t-butylphenyl)butane is 45.4 L ‧ mol -1 ‧ sec -1 , 4,4'-butylene bis(3-methyl-6-tert-butylphenol) 48.6L‧mol -1 ‧sec -1 .

由感光性樹脂組合物之殘膜率所得之γ值(伽馬值)較佳為0.5以上,更佳為1.0以上,進而較佳為2.0以上,尤佳為5.0以上。由C=C雙鍵之反應率所得之γ值(伽馬值)較佳為0.18以上,更佳為0.19以上,進 而較佳為0.20以上,尤佳為0.25以上。 The γ value (gamma value) obtained from the residual film ratio of the photosensitive resin composition is preferably 0.5 or more, more preferably 1.0 or more, still more preferably 2.0 or more, and particularly preferably 5.0 or more. The γ value (gamma value) obtained from the reaction rate of the C=C double bond is preferably 0.18 or more, more preferably 0.19 or more. It is preferably 0.20 or more, and particularly preferably 0.25 or more.

(D)苯酚衍生物相對於感光性樹脂組合物之總固形物成分質量之比例較佳為0.001質量%~10質量%。就提高感光性樹脂組合物之解析性之觀點、抑制曝光時之焦點挪移時的解析性之劣化之觀點、及抑制曝光時之焦點挪移時的抗蝕劑線與抗蝕劑線之間的間隙部分之狹小化之觀點而言,該比例較佳為0.001質量%以上,更佳為0.01質量%以上,進而較佳為0.1質量%以上,尤佳為0.2質量%以上,最佳為0.5質量%以上。另一方面,就感度下降較少之方面及提高解析性之方面而言,該比例較佳為10質量%以下,更佳為5質量%以下,進而較佳為3質量%以下,尤佳為2質量%以下,最佳為1.5質量%以下。 The ratio of the (D) phenol derivative to the total solid content of the photosensitive resin composition is preferably 0.001% by mass to 10% by mass. From the viewpoint of improving the resolution of the photosensitive resin composition, the viewpoint of suppressing the deterioration of the resolution at the time of focus shift during exposure, and the gap between the resist line and the resist line when the focus shift during exposure is suppressed. The ratio is preferably 0.001% by mass or more, more preferably 0.01% by mass or more, still more preferably 0.1% by mass or more, particularly preferably 0.2% by mass or more, and most preferably 0.5% by mass. the above. On the other hand, the ratio is preferably 10% by mass or less, more preferably 5% by mass or less, still more preferably 3% by mass or less, particularly preferably in terms of a decrease in sensitivity and an improvement in resolution. 2% by mass or less, preferably 1.5% by mass or less.

<添加劑> <additive> (染料及著色物質) (dye and coloring matter)

實施形態中,感光性樹脂組合物可根據期望進而含有選自由染料(例如隱色染料、螢烷染料等)及著色物質所組成之群中之至少一種。 In the embodiment, the photosensitive resin composition may further contain at least one selected from the group consisting of a dye (for example, a leuco dye, a fluorescein dye, etc.) and a coloring matter, as desired.

作為著色物質,例如可列舉:品紅、酞菁綠、金黃胺鹼、對品紅、結晶紫、甲基橙、尼祿藍2B、維多利亞藍、孔雀綠(例如保土谷化學(股)製造之Aizen(註冊商標)MALACHITE GREEN)、鹼性藍20、鑽石綠(例如保土谷化學(股)製造之Aizen(註冊商標)DIAMOND GREEN GH)。關於感光性樹脂組合物中之著色物質之含量,於將感光性樹脂組合物之總固形物成分質量設定為100質量%時,較佳為0.001質量%~1質量%。就提高感光性樹脂組合物之處理性之觀點而言,較佳為將該含量設定為0.001質量%以上。另一方面,就維持感光性樹脂組合物之保存穩定性之觀點而言,較佳為將該含量設定為1質量%以下。 Examples of the coloring matter include magenta, phthalocyanine green, golden amine base, p-magenta, crystal violet, methyl orange, Nero blue 2B, Victoria blue, and malachite green (for example, manufactured by Hodogaya Chemical Co., Ltd.). Aizen (registered trademark) MALACHITE GREEN), alkaline blue 20, diamond green (for example, Aizen (registered trademark) DIAMOND GREEN GH manufactured by Hodogaya Chemical Co., Ltd.). The content of the coloring matter in the photosensitive resin composition is preferably 0.001% by mass to 1% by mass when the total solid content of the photosensitive resin composition is 100% by mass. From the viewpoint of improving the rationality of the photosensitive resin composition, the content is preferably set to 0.001% by mass or more. On the other hand, from the viewpoint of maintaining the storage stability of the photosensitive resin composition, the content is preferably set to 1% by mass or less.

感光性樹脂組合物藉由含有染料而使曝光部分顯色,故而於視 認性之方面而言較佳,又,於檢查機等讀取用以進行曝光之對位標記之情形時,曝光部與未曝光部之對比度較大之情況下容易識別而有利。就該觀點而言,作為較佳染料,可列舉隱色染料及螢烷染料。 The photosensitive resin composition develops an exposed portion by containing a dye, so In the case of the visibility, when the inspection machine or the like reads the alignment mark for exposure, it is advantageous to easily recognize the contrast between the exposed portion and the unexposed portion. From this point of view, preferred dyes include leuco dyes and fluorin dyes.

作為隱色染料,可列舉:三(4-二甲胺基苯基)甲烷[隱色結晶紫]、雙(4-二甲胺基苯基)苯基甲烷[隱色孔雀綠]等。尤其就對比度變得良好之觀點而言,作為隱色染料,較佳為使用隱色結晶紫。相對於感光性樹脂組合物之總固形物成分質量,感光性樹脂組合物中之隱色染料之含量較佳為0.1質量%~10質量%。就使曝光部分與未曝光部分之對比度良好之觀點而言,較佳為將該含量設定為0.1質量%以上。該含量更佳為設定為0.2質量%以上,尤佳為設定為0.4質量%以上。另一方面,就維持保存穩定性之觀點而言,較佳為將該含量設定為10質量%以下。該含量更佳為設定為5質量%以下,尤佳為設定為2質量%以下。 Examples of the leuco dye include tris(4-dimethylaminophenyl)methane [leuco crystal violet], bis(4-dimethylaminophenyl)phenylmethane [hidden malachite green], and the like. In particular, from the viewpoint of a good contrast, it is preferable to use a leuco crystal violet as a leuco dye. The content of the leuco dye in the photosensitive resin composition is preferably from 0.1% by mass to 10% by mass based on the total solid content of the photosensitive resin composition. From the viewpoint of making the contrast between the exposed portion and the unexposed portion good, the content is preferably made 0.1% by mass or more. The content is more preferably 0.2% by mass or more, and particularly preferably 0.4% by mass or more. On the other hand, from the viewpoint of maintaining storage stability, it is preferred to set the content to 10% by mass or less. The content is more preferably 5% by mass or less, and particularly preferably 2% by mass or less.

又,就使密接性及對比度最適化之觀點而言,較佳為於感光性樹脂組合物中組合使用隱色染料與(C)光聚合起始劑中之上述鹵素化合物。於將隱色染料與該鹵素化合物併用之情形時,就維持感光層之色相之保存穩定性之觀點而言,於將感光性樹脂組合物之總固形物成分質量設定為100質量%時,感光性樹脂組合物中之該鹵化合物之含量較佳為0.01質量%~3質量%。 Moreover, from the viewpoint of optimizing the adhesion and the contrast, it is preferred to use the above-mentioned halogen compound in combination with the leuco dye and (C) photopolymerization initiator in the photosensitive resin composition. When the leuco dye is used in combination with the halogen compound, the photosensitive solid content of the photosensitive resin composition is set to 100% by mass, and the photosensitive material is maintained at a mass stability of the photosensitive layer. The content of the halogen compound in the resin composition is preferably from 0.01% by mass to 3% by mass.

(其他添加劑) (other additives)

為了提高熱穩定性及保存穩定性,感光性樹脂組合物可進而含有選自由自由基聚合抑制劑、苯并三唑類及羧基苯并三唑類所組成之群中之至少一種化合物。 In order to improve thermal stability and storage stability, the photosensitive resin composition may further contain at least one compound selected from the group consisting of a radical polymerization inhibitor, a benzotriazole, and a carboxybenzotriazole.

作為自由基聚合抑制劑,例如可列舉:對甲氧基苯酚、對苯二酚、鄰苯三酚、萘胺、第三丁基兒茶酚、氯化亞銅、2,6-二-第三丁基-對甲酚、2,2'-亞甲基雙(4-甲基-6-第三丁基苯酚)、2,2'-亞甲基雙(4-乙 基-6-第三丁基苯酚)、亞硝基苯基羥基胺鋁鹽、二苯基亞硝基胺等。為了不損及感光性樹脂組合物之感度,較佳為亞硝基苯基羥基胺鋁鹽。 Examples of the radical polymerization inhibitor include p-methoxyphenol, hydroquinone, pyrogallol, naphthylamine, t-butylcatechol, cuprous chloride, and 2,6-di- Tributyl-p-cresol, 2,2'-methylenebis(4-methyl-6-tert-butylphenol), 2,2'-methylene double (4-B Base-6-tert-butylphenol), nitrosophenylhydroxylamine aluminum salt, diphenylnitrosamine, and the like. In order not to impair the sensitivity of the photosensitive resin composition, a nitrosophenylhydroxylamine aluminum salt is preferred.

作為苯并三唑類,例如可列舉:1,2,3-苯并三唑、1-氯-1,2,3-苯并三唑、雙(N-2-乙基己基)胺基亞甲基-1,2,3-苯并三唑、雙(N-2-乙基己基)胺基亞甲基-1,2,3-甲苯三唑、雙(N-2-羥基乙基)胺基亞甲基-1,2,3-苯并三唑等。 Examples of the benzotriazoles include 1,2,3-benzotriazole, 1-chloro-1,2,3-benzotriazole, and bis(N-2-ethylhexyl)aminone. Methyl-1,2,3-benzotriazole, bis(N-2-ethylhexyl)aminomethylene-1,2,3-toluenetriazole, bis(N-2-hydroxyethyl) Aminomethylene-1,2,3-benzotriazole and the like.

作為羧基苯并三唑類,例如可列舉:4-羧基-1,2,3-苯并三唑、5-羧基-1,2,3-苯并三唑、N-(N,N-二-2-乙基己基)胺基亞甲基羧基苯并三唑、N-(N,N-二-2-羥基乙基)胺基亞甲基羧基苯并三唑、N-(N,N-二-2-乙基己基)胺基亞甲基羧基苯并三唑等。 Examples of the carboxybenzotriazoles include 4-carboxy-1,2,3-benzotriazole, 5-carboxy-1,2,3-benzotriazole, and N-(N,N-di 2-ethylhexyl)aminomethylenecarboxybenzotriazole, N-(N,N-di-2-hydroxyethyl)aminomethylenecarboxybenzotriazole, N-(N,N -Di-2-ethylhexyl)aminomethylenecarboxybenzotriazole and the like.

關於自由基聚合抑制劑、苯并三唑類及羧基苯并三唑類之總含量,於將感光性樹脂組合物之總固形物成分質量設定為100質量%時,較佳為0.01質量%~3質量%,更佳為0.05質量%~1質量%。就對感光性樹脂組合物賦予保存穩定性之觀點而言,較佳為將該含量設定為0.01質量%以上。另一方面,就維持感度且抑制染料之脫色之觀點而言,較佳為將該含量設定為3質量%以下。 The total content of the radical polymerization inhibitor, the benzotriazole, and the carboxybenzotriazole is preferably 0.01% by mass when the total solid content of the photosensitive resin composition is 100% by mass. 3 mass%, more preferably 0.05 mass% to 1 mass%. From the viewpoint of imparting storage stability to the photosensitive resin composition, it is preferred to set the content to 0.01% by mass or more. On the other hand, from the viewpoint of maintaining sensitivity and suppressing discoloration of the dye, it is preferred to set the content to 3% by mass or less.

實施形態中,感光性樹脂組合物可進而含有雙酚A之環氧化合物類。作為雙酚A之環氧化合物類,例如可列舉:將雙酚A以聚丙二醇修飾而使末端環氧化之化合物等。 In the embodiment, the photosensitive resin composition may further contain an epoxy compound of bisphenol A. Examples of the epoxy compound of bisphenol A include a compound obtained by modifying bisphenol A with polypropylene glycol and epoxidizing a terminal.

實施形態中,感光性樹脂組合物可進而含有塑化劑。作為塑化劑,例如可列舉:鄰苯二甲酸酯類(例如鄰苯二甲酸二乙酯等)、鄰甲苯磺醯胺、對甲苯磺醯胺、檸檬酸三丁酯、檸檬酸三乙酯、乙醯基檸檬酸三乙酯、乙醯基檸檬酸三正丙酯、乙醯基檸檬酸三正丁酯、聚乙二醇、聚丙二醇、聚乙二醇烷基醚、聚丙二醇烷基醚等。又,亦可列舉:ADEKANOL SDX-1569、ADEKANOL SDX-1570、ADEKANOL SDX-1571、ADEKANOL SDX-479(以上為旭電化(股)製造),Newpol BP-23P、Newpol BP-3P、Newpol BP-5P、Newpol BPE-20T、Newpol BPE-60、Newpol BPE-100、Newpol BPE-180(以上為三洋化成(股)製造),Uniol DB-400、Uniol DAB-800、Uniol DA-350F、Uniol DA-400、Uniol DA-700(以上為日本油脂(股)製造),BA-P4U glycol、BA-P8 glycol(以上為日本乳化劑(股)製造)等具有雙酚骨架之化合物。 In the embodiment, the photosensitive resin composition may further contain a plasticizer. Examples of the plasticizer include phthalic acid esters (for example, diethyl phthalate), o-toluenesulfonamide, p-toluenesulfonamide, tributyl citrate, and triethyl citrate. , Ethyltriethyl citrate, tri-n-propyl ethyl citrate, tri-n-butyl citrate, polyethylene glycol, polypropylene glycol, polyethylene glycol alkyl ether, polypropylene glycol alkyl Ether, etc. Also, list: ADEKANOL SDX-1569, ADEKANOL SDX-1570, ADEKANOL SDX-1571, ADEKANOL SDX-479 (above is manufactured by Asahi Kasei Co., Ltd.), Newpol BP-23P, Newpol BP-3P, Newpol BP-5P, Newpol BPE-20T, Newpol BPE-60, Newpol BPE-100, Newpol BPE-180 (above is manufactured by Sanyo Chemical Co., Ltd.), Uniol DB-400, Uniol DAB-800, Uniol DA-350F, Uniol DA-400, Uniol DA-700 (above manufactured by Japan Oils and Fats Co., Ltd.), BA a compound having a bisphenol skeleton such as P4U glycol or BA-P8 glycol (manufactured by Nippon Emulsifier Co., Ltd.).

相對於感光性樹脂組合物之總固形物成分質量,感光性樹脂組合物中之塑化劑之含量較佳為1質量%~50質量%,更佳為1質量%~30質量%。就抑制顯影時間之延遲且對硬化膜賦予柔軟性之觀點而言,較佳為將該含量設定為1質量%以上。另一方面,就抑制硬化不足及冷流之觀點而言,較佳為將該含量設定為50質量%以下。 The content of the plasticizer in the photosensitive resin composition is preferably from 1% by mass to 50% by mass, and more preferably from 1% by mass to 30% by mass based on the total mass of the solid content of the photosensitive resin composition. From the viewpoint of suppressing the delay of the development time and imparting flexibility to the cured film, it is preferred to set the content to 1% by mass or more. On the other hand, from the viewpoint of suppressing insufficient hardening and cold flow, it is preferred to set the content to 50% by mass or less.

[溶劑] [solvent]

感光性樹脂組合物可溶解於溶劑中而以感光性樹脂組合物調和液之形態用於製造感光性樹脂積層體。作為溶劑,可列舉酮類、醇類等。上述酮類係以甲基乙基酮(MEK)為代表。上述醇類係以甲醇、乙醇及異丙醇為代表。溶劑較佳為於感光性樹脂積層體之製造時,以塗佈於支撐層上之感光性樹脂組合物調和液之25℃下之黏度成為500mPa‧s~4,000mPa‧s的量而添加至感光性樹脂組合物中。 The photosensitive resin composition can be used in the production of a photosensitive resin laminate in the form of a photosensitive resin composition solution in a solvent. Examples of the solvent include ketones, alcohols, and the like. The above ketones are represented by methyl ethyl ketone (MEK). The above alcohols are represented by methanol, ethanol and isopropanol. In the production of the photosensitive resin laminate, the solvent is preferably added to the photosensitive material at a viscosity of 25 mPa·s to 4,000 mPa·s at 25° C. of the photosensitive resin composition preparation liquid applied to the support layer. In the resin composition.

[感光性樹脂積層體] [Photosensitive Resin Laminate]

實施形態中,提供一種將包含如上述之感光性樹脂組合物之感光性樹脂層積層於支撐層(例如支撐膜等)上而成之感光性樹脂積層體。視需要,感光性樹脂積層體亦可於與感光性樹脂層之與支撐層側為相反側之表面上具有保護層。 In the embodiment, a photosensitive resin laminate in which a photosensitive resin containing the photosensitive resin composition as described above is laminated on a support layer (for example, a support film or the like) is provided. The photosensitive resin laminate may have a protective layer on the surface opposite to the support layer side of the photosensitive resin layer, as needed.

作為支撐層,較佳為可使自曝光光源放射之光穿透的透明之支撐膜。作為此種支撐膜,例如可列舉:聚對苯二甲酸乙二酯膜、聚乙烯醇膜、聚氯乙烯膜、氯乙烯共聚物膜、聚偏二氯乙烯膜、偏二氯乙 烯共聚合膜、聚甲基丙烯酸甲酯共聚物膜、聚苯乙烯膜、聚丙烯腈膜、苯乙烯共聚物膜、聚醯胺膜、纖維素衍生物膜等。該等膜視需要亦可使用經延伸者。支撐膜較佳為霧度為5以下者。膜之厚度越薄,越可提高圖像形成性及經濟性,故而有利,但為了維持感光性樹脂積層體之強度,可較佳地使用10μm~30μm者。 As the support layer, a transparent support film which can penetrate light emitted from the exposure light source is preferable. Examples of such a support film include a polyethylene terephthalate film, a polyvinyl alcohol film, a polyvinyl chloride film, a vinyl chloride copolymer film, a polyvinylidene chloride film, and a vinylidene chloride. An olefin copolymer film, a polymethyl methacrylate copolymer film, a polystyrene film, a polyacrylonitrile film, a styrene copolymer film, a polyamide film, a cellulose derivative film, or the like. These films may also be used as extensions as needed. The support film preferably has a haze of 5 or less. The thinner the thickness of the film, the more advantageous the image formation property and the economical efficiency are. However, in order to maintain the strength of the photosensitive resin laminate, 10 μm to 30 μm can be preferably used.

感光性樹脂積層體中所使用之保護層之重要特性係與感光性樹脂層之密接力較支撐層而為充分小,可容易地剝離。例如聚乙烯膜或聚丙烯膜可較佳地用作保護層。又,亦可使用日本專利特開昭59-202457號公報中所示之剝離性優異之膜。保護層之膜厚較佳為10μm~100μm,更佳為10μm~50μm。 The important property of the protective layer used in the photosensitive resin laminate is that the adhesion to the photosensitive resin layer is sufficiently smaller than that of the support layer, and can be easily peeled off. For example, a polyethylene film or a polypropylene film can be preferably used as the protective layer. Further, a film excellent in peeling properties as shown in Japanese Laid-Open Patent Publication No. SHO 59-202457 can also be used. The film thickness of the protective layer is preferably from 10 μm to 100 μm, more preferably from 10 μm to 50 μm.

於聚乙烯膜表面上,有時存在被稱為魚眼之凝膠。於將具有魚眼之聚乙烯膜用作保護層之情形時,有時該魚眼會轉印至感光性樹脂層上。若魚眼轉印至感光性樹脂層上,則有時於層壓時捲入空氣而成為空隙,導致抗蝕劑圖案之缺損。就防止魚眼之觀點而言,作為保護層之材質,較佳為延伸聚丙烯。作為具體例,可列舉王子製紙(股)製造之ALPHAN E-200A。 On the surface of a polyethylene film, there is sometimes a gel called a fisheye. In the case where a polyethylene film having a fisheye is used as the protective layer, the fisheye is sometimes transferred onto the photosensitive resin layer. When the fisheye is transferred onto the photosensitive resin layer, air may be trapped during lamination to form a void, resulting in a defect in the resist pattern. From the viewpoint of preventing fish eyes, as a material of the protective layer, extended polypropylene is preferred. As a specific example, ALPHAN E-200A manufactured by Oji Paper Co., Ltd. can be cited.

感光性樹脂積層體中之感光性樹脂層之厚度根據用途而有所不同,較佳為5μm~100μm,更佳為7μm~60μm。感光性樹脂層之厚度越薄則解析度越提高,又,越厚則膜強度越提高。 The thickness of the photosensitive resin layer in the photosensitive resin laminate is different depending on the application, and is preferably 5 μm to 100 μm, more preferably 7 μm to 60 μm. The thinner the thickness of the photosensitive resin layer, the higher the resolution, and the thicker the film strength is.

其次,對感光性樹脂積層體之製造方法加以說明。 Next, a method of producing a photosensitive resin laminate will be described.

作為依序積層支撐層及感光性樹脂層、以及視需要之保護層而製作感光性樹脂積層體之方法,可採用已知之方法。例如,將感光性樹脂層中所使用之感光性樹脂組合物與溶解其之溶劑混合而製成均勻之溶液,首先使用棒塗機或輥塗機塗佈於支撐層上,繼而加以乾燥將上述溶劑去除,藉此可於支撐層上積層包含感光性樹脂組合物之感光性樹脂層。繼而視需要,於感光性樹脂層上層壓保護層,藉此可製作 感光性樹脂積層體。 A known method can be employed as a method of producing a photosensitive resin laminate by sequentially laminating a support layer, a photosensitive resin layer, and an optional protective layer. For example, a photosensitive resin composition used in a photosensitive resin layer is mixed with a solvent dissolved therein to form a uniform solution, which is first applied onto a support layer by a bar coater or a roll coater, and then dried. By removing the solvent, a photosensitive resin layer containing the photosensitive resin composition can be laminated on the support layer. Then, a protective layer is laminated on the photosensitive resin layer as needed, thereby making it possible Photosensitive resin laminate.

<抗蝕劑圖案之形成方法> <Method of Forming Resist Pattern>

其次,對使用本實施形態之感光性樹脂積層體製造抗蝕劑圖案之方法之一例加以說明。該方法可包含如下步驟:將感光性樹脂積層體積層於基板上之積層步驟、將該感光性樹脂積層體之感光性樹脂層曝光之曝光步驟、及將該感光性樹脂層之未曝光部顯影去除之顯影步驟。作為抗蝕劑圖案,例如可列舉:印刷配線板、半導體元件、印刷版、液晶顯示器面板、可撓性基板、導線架基板、COF(Chip On Film,覆晶薄膜)用基板、半導體封裝用基板、液晶用透明電極、液晶用TFT(Thin Film Transistor,薄膜電晶體)用配線、PDP(Plasma Display Panel,電漿顯示器面板)用電極等之圖案。作為一例,如下般說明印刷配線板之製造方法。 Next, an example of a method of producing a resist pattern using the photosensitive resin laminate of the present embodiment will be described. The method may include the steps of laminating a photosensitive resin layer on a substrate, exposing the photosensitive resin layer of the photosensitive resin laminate, and developing the unexposed portion of the photosensitive resin layer. The development step of removal. Examples of the resist pattern include a printed wiring board, a semiconductor element, a printing plate, a liquid crystal display panel, a flexible substrate, a lead frame substrate, a COF (Chip On Film) substrate, and a semiconductor package substrate. A transparent electrode for liquid crystal, a TFT for liquid crystal (Thin Film Transistor), a PDP (Plasma Display Panel) electrode, or the like. As an example, a method of manufacturing a printed wiring board will be described below.

印刷配線板係經由以下各步驟而製造。 The printed wiring board is manufactured through the following steps.

(1)積層步驟 (1) Lamination step

於本步驟中,一邊剝離感光性樹脂積層體之保護層(有保護層之情形),一邊使用熱輥層壓機使感光性樹脂積層體密接於銅箔積層板、可撓性基板等基板上。 In the present step, the photosensitive resin laminate is adhered to a substrate such as a copper foil laminate or a flexible substrate by using a hot roll laminator while peeling off the protective layer of the photosensitive resin laminate (in the case of a protective layer). .

(2)曝光步驟 (2) Exposure step

於本步驟中,藉由以下曝光方法將感光性樹脂層曝光:使具有所期望之配線圖案之遮罩膜密接於支撐層上並使用活性光源進行之曝光方法、利用作為所期望之配線圖案之描繪圖案之直接描繪的曝光方法、或使光罩之圖像經過透鏡而投影之曝光方法。實施形態之感光性樹脂組合物之優點於利用描繪圖案之直接描繪的曝光方法、或使光罩之圖像經過透鏡而投影之曝光方法中更顯著,於利用描繪圖案之直接描繪的曝光方法中尤其顯著。 In this step, the photosensitive resin layer is exposed by the following exposure method: an exposure method in which a mask film having a desired wiring pattern is adhered to the support layer and an active light source is used, and the desired wiring pattern is utilized. An exposure method for directly drawing a pattern or an exposure method for projecting an image of a reticle through a lens. The advantage of the photosensitive resin composition of the embodiment is more remarkable in an exposure method using a direct drawing of a drawing pattern or an exposure method in which an image of a mask is projected through a lens, in an exposure method using a direct drawing of a drawing pattern. Especially remarkable.

(3)顯影步驟 (3) Development step

於本步驟中,曝光後,將感光性樹脂層上之支撐層剝離,繼而使用鹼性水溶液之顯影液將未曝光部顯影去除,藉此於基板上形成抗蝕劑圖案。 In this step, after the exposure, the support layer on the photosensitive resin layer is peeled off, and then the unexposed portion is developed and removed using a developing solution of an alkaline aqueous solution, whereby a resist pattern is formed on the substrate.

作為鹼性水溶液,使用Na2CO3或K2CO3之水溶液。鹼性水溶液係根據感光性樹脂層之特性而適宜選擇,較佳為約0.2質量%~約2質量%之濃度且約20℃~約40℃之Na2CO3水溶液。 As the alkaline aqueous solution, an aqueous solution of Na 2 CO 3 or K 2 CO 3 is used. The alkaline aqueous solution is appropriately selected depending on the characteristics of the photosensitive resin layer, and is preferably a Na 2 CO 3 aqueous solution having a concentration of from about 0.2% by mass to about 2% by mass and from about 20 ° C to about 40 ° C.

可經由上述(1)~(3)之各步驟而獲得抗蝕劑圖案。該等步驟之後,根據情形,亦可進而進行約100℃~約300℃之加熱步驟。藉由實施該加熱步驟,可進一步提高耐化學品性。加熱時,可使用熱風、紅外線或遠紅外線之方式之加熱爐。 A resist pattern can be obtained through each of the above steps (1) to (3). After the steps, depending on the case, a heating step of about 100 ° C to about 300 ° C may be further carried out. By performing this heating step, the chemical resistance can be further improved. When heating, a heating furnace of hot air, infrared rays or far infrared rays can be used.

(4)蝕刻步驟或鍍敷步驟 (4) etching step or plating step

對藉由顯影而露出之基板表面(例如銅箔積層板之銅面)進行蝕刻或鍍敷,製造導體圖案。 A conductor pattern is produced by etching or plating a surface of a substrate exposed by development (for example, a copper surface of a copper foil laminate).

(5)剝離步驟 (5) Stripping step

其後,藉由較顯影液具有更強鹼性之水溶液將抗蝕劑圖案自基板上剝離。對剝離用之鹼性水溶液並無特別限制,較佳為約2質量%~約5質量%之濃度且約40~約70℃之溫度之NaOH或KOH之水溶液。亦可於剝離液中添加少量之水溶性溶劑。 Thereafter, the resist pattern is peeled off from the substrate by an aqueous solution having a more alkaline solution than the developer. The alkaline aqueous solution for peeling is not particularly limited, and is preferably an aqueous solution of NaOH or KOH having a concentration of about 2% by mass to about 5% by mass and a temperature of about 40 to about 70 °C. A small amount of a water-soluble solvent may also be added to the stripping solution.

本實施形態之感光性樹脂積層體係適於製造印刷配線板、可撓性基板、導線架基板、COF用基板、半導體封裝用基板、液晶用透明電極、液晶用TFT用配線、PDP用電極等導體圖案的感光性樹脂積層體。 The photosensitive resin layering system of the present embodiment is suitable for producing a printed wiring board, a flexible substrate, a lead frame substrate, a COF substrate, a semiconductor package substrate, a liquid crystal transparent electrode, a liquid crystal TFT wiring, and a PDP electrode. A patterned photosensitive resin laminate.

再者,關於上述各種參數,只要無特別說明,則係依據下述實施例之測定方法或業者理解為與其相同之方法而測定。 Incidentally, the above various parameters are measured by the measurement method of the following examples or by the same method as the above, unless otherwise specified.

[實施例] [Examples]

繼而,列舉實施例及比較例進一步具體說明本實施形態。然 而,本實施形態只要不挪移其主旨,則不受以下實施例之限定。實施例中之物性係藉由以下方法而測定。 Next, the present embodiment will be further specifically described by way of examples and comparative examples. Of course However, the present embodiment is not limited to the following examples as long as the gist of the present invention is not removed. The physical properties in the examples were determined by the following methods.

<感度評價> <sensitivity evaluation>

首先,以噴霧壓力0.2MPa使用研磨材(日本Carlit(股)製造,Saku random R(註冊商標# 220))對積層有35μm壓延銅箔之0.4mm厚之銅箔積層板進行噴射刷磨。 First, a 0.4 mm-thick copper foil laminate having a laminated copper foil of 35 μm laminated was spray-brushed using a polishing material (manufactured by Carlit, Japan, Saku random R (registered trademark #220)) at a spray pressure of 0.2 MPa.

其次,一邊剝離感光性樹脂積層體之聚乙烯膜(保護層),一邊於經預熱至60℃之銅箔積層板上,藉由熱輥層壓機(旭化成(股)公司製造,AL-700)以輥溫度105℃層壓感光性樹脂積層體。空氣壓力係設定為0.35MPa,層壓速度係設定為1.5m/min。 Next, the polyethylene film (protective layer) of the photosensitive resin laminate was peeled off, and the laminate was preheated to 60 ° C on a copper foil laminate, and was manufactured by Asahi Kasei Co., Ltd., AL- 700) The photosensitive resin laminate was laminated at a roll temperature of 105 °C. The air pressure was set to 0.35 MPa, and the laminating speed was set to 1.5 m/min.

繼而,藉由直接描繪式曝光裝置(Orbotech(股)製造,Paragon-Ultra 100),以Stauffer製21級階段式曝光表作為遮罩,以各種曝光量進行曝光。此時,將曝光時之焦點之位置聚焦於基板表面。 Then, by a direct delineation exposure apparatus (manufactured by Orbotech Co., Ltd., Paragon-Ultra 100), a 21-stage stage exposure meter manufactured by Stauffer was used as a mask, and exposure was performed at various exposure amounts. At this time, the position of the focus at the time of exposure is focused on the surface of the substrate.

進而,剝離聚對苯二甲酸乙二酯膜(支撐層)後,使用鹼性顯影機(富士機工製造,乾膜用顯影機),以特定時間噴霧30℃之1質量%Na2CO3水溶液,以最小顯影時間之2倍時間將感光性樹脂層之未曝光部分溶解去除。此時,將未曝光部分之感光性樹脂層完全溶解所需之最少時間作為最小顯影時間。 Further, after the polyethylene terephthalate film (support layer) was peeled off, an alkali developing machine (manufactured by Fuji Machine Co., Ltd., a dry film developing machine) was used to spray a 1% by mass Na 2 CO 3 aqueous solution at 30 ° C for a specific period of time. The unexposed portion of the photosensitive resin layer was dissolved and removed by twice the minimum development time. At this time, the minimum time required to completely dissolve the photosensitive resin layer of the unexposed portion was taken as the minimum development time.

藉由以上操作而獲得硬化抗蝕劑圖案。求出顯影後之殘膜極限級數成為7級之曝光量。 A hardened resist pattern is obtained by the above operation. The amount of exposure of the residual film limit level after development was determined to be 7 steps.

<解析度評價(通常)> <resolution evaluation (usual)>

首先,以噴霧壓力0.2MPa使用研磨材(日本Carlit(股)製造,Saku random R(註冊商標# 220))對積層有35μm壓延銅箔之0.4mm厚之銅箔積層板進行噴射刷磨。 First, a 0.4 mm-thick copper foil laminate having a laminated copper foil of 35 μm laminated was spray-brushed using a polishing material (manufactured by Carlit, Japan, Saku random R (registered trademark #220)) at a spray pressure of 0.2 MPa.

其次,一邊剝離感光性樹脂積層體之聚乙烯膜(保護層),一邊於經預熱至60℃之銅箔積層板上,藉由熱輥層壓機(旭化成(股)公司製 造,AL-700)以輥溫度105℃層壓感光性樹脂積層體。空氣壓力係設定為0.35MPa,層壓速度係設定為1.5m/min。 Then, the polyethylene film (protective layer) of the photosensitive resin laminate was peeled off from the copper foil laminate which was preheated to 60 ° C by a hot roll laminator (Asahi Kasei Co., Ltd.) Manufacture, AL-700) A photosensitive resin laminate was laminated at a roll temperature of 105 °C. The air pressure was set to 0.35 MPa, and the laminating speed was set to 1.5 m/min.

繼而,藉由直接描繪式曝光裝置(Orbotech(股)製造,Paragon-Ultra 100),將未曝光部成為線(間隙)之圖案曝光。此時之曝光係以將上述Stauffer製21級階段式曝光表作為遮罩進行曝光、顯影時之最高殘膜級數成為7級之曝光量進行曝光。此時,將曝光時之焦點之位置聚焦於基板表面。進而,剝離聚對苯二甲酸乙二酯膜(支撐層)後,以最小顯影時間之2倍之顯影時間進行顯影。此時,將正常形成未曝光部之線及間隙的最小線寬之值作為圖案解析度a。 Then, the pattern in which the unexposed portion was a line (gap) was exposed by a direct drawing exposure apparatus (manufactured by Orbotech Co., Ltd., Paragon-Ultra 100). At this time, the exposure was performed by exposing the above-mentioned Stauffer 21-stage staged exposure meter as a mask to an exposure amount in which the highest residual film level was 7 steps. At this time, the position of the focus at the time of exposure is focused on the surface of the substrate. Further, after the polyethylene terephthalate film (support layer) was peeled off, development was carried out at a development time twice as long as the minimum development time. At this time, the value of the minimum line width of the line and the gap in which the unexposed portion is normally formed is taken as the pattern resolution a.

於本發明中,將未曝光部分之感光性樹脂層完全溶解所需之最少時間作為最小顯影時間。再者,對硬化抗蝕劑圖案中,未曝光部分之基板表面上未殘留抗蝕劑而基板表面顯現、亦不存在自硬化抗蝕劑拉絲般之抗蝕劑成分之突起、線之直線性亦良好、硬化抗蝕劑彼此亦未密接而正常形成的最小線寬進行評價。作為解析度之值,使用30μm以下係以2μm為單位而獲得、30μm以上係以5μm為單位而獲得之描繪圖案進行曝光。 In the present invention, the minimum time required to completely dissolve the photosensitive resin layer of the unexposed portion is taken as the minimum development time. Further, in the hardened resist pattern, no resist remains on the surface of the unexposed portion of the substrate, and the surface of the substrate appears, and there is no protrusion of the resist component and the linearity of the line as the hardened resist is drawn. The minimum line width which was also good and the hardened resists were not closely bonded to each other and were normally formed was evaluated. As a value of the resolution, a drawing pattern obtained by using 30 μm or less in units of 2 μm and 30 μm or more in units of 5 μm is used for exposure.

<解析度評價(焦點挪移)> <resolution evaluation (focus shift)>

使曝光時之焦點之位置自基板表面於該基板之厚度方向上向基板內側挪移300μm。除此以外,以與上述解析度評價(通常)相同之方式進行操作。此時,將正常形成未曝光部之線(間隙)的最小線寬之值作為圖案解析度b。 The position of the focus at the time of exposure was shifted from the substrate surface to the inside of the substrate by 300 μm in the thickness direction of the substrate. Except for this, the operation is performed in the same manner as the above-described resolution evaluation (usually). At this time, the value of the minimum line width of the line (gap) in which the unexposed portion is normally formed is taken as the pattern resolution b.

<解析度之差> <difference in resolution>

關於將曝光時之焦點之位置聚焦於基板表面時、與使曝光時之焦點之位置自基板表面挪移300μm時之解析度之差,係藉由自上述<解析度評價(焦點挪移)>之圖案解析度b之值減去<解析度評價(通常)>之圖案解析度a之值而求得。 The difference in resolution when the position of the focus at the time of exposure is focused on the surface of the substrate and the position of the focus at the time of exposure is shifted by 300 μm from the substrate surface is determined by the above-mentioned <resolution evaluation (focus shift) pattern The value of the resolution b is obtained by subtracting the value of the pattern resolution a of the <resolution evaluation (normal)>.

<間隙寬之差> <difference in gap width>

首先,以噴霧壓力0.2MPa使用研磨材(日本Carlit(股)製造,Saku random R(註冊商標# 220))對積層有35μm壓延銅箔之0.4mm厚之銅箔積層板進行噴射刷磨。 First, a 0.4 mm-thick copper foil laminate having a laminated copper foil of 35 μm laminated was spray-brushed using a polishing material (manufactured by Carlit, Japan, Saku random R (registered trademark #220)) at a spray pressure of 0.2 MPa.

其次,一邊剝離感光性樹脂積層體之聚乙烯膜(保護層),一邊於經預熱至60℃之銅箔積層板上,藉由熱輥層壓機(旭化成(股)公司製造,AL-700)以輥溫度105℃層壓感光性樹脂積層體。空氣壓力係設定為0.35MPa,層壓速度係設定為1.5m/min。 Next, the polyethylene film (protective layer) of the photosensitive resin laminate was peeled off, and the laminate was preheated to 60 ° C on a copper foil laminate, and was manufactured by Asahi Kasei Co., Ltd., AL- 700) The photosensitive resin laminate was laminated at a roll temperature of 105 °C. The air pressure was set to 0.35 MPa, and the laminating speed was set to 1.5 m/min.

其次,藉由直接描繪式曝光裝置(Orbotech(股)製造,Paragon-Ultra 100),將曝光部及未曝光部各自之寬度成為2:1之比率之圖案曝光。此時之曝光係以將上述Stauffer製21級階段式曝光表作為遮罩進行曝光、顯影時之最高殘膜級數成為7級之曝光量進行曝光。進而,剝離聚對苯二甲酸乙二酯膜(支撐層)後,以最小顯影時間之2倍之顯影時間進行顯影。對於所得圖案中之未曝光部之線(間隙)寬為40μm之部分,藉由顯微鏡實測其間隙寬。對於各積層體之試樣,進行將曝光時之焦點之位置聚焦於基板表面之情形、與使曝光時之焦點之位置自基板表面於該基板之厚度方向上向基板內側挪移300μm之情形之兩種圖案形成。 Next, the pattern of each of the exposed portion and the unexposed portion was formed to have a ratio of 2:1 by a direct drawing exposure apparatus (manufactured by Orbotech Co., Ltd., Paragon-Ultra 100). At this time, the exposure was performed by exposing the above-mentioned Stauffer 21-stage staged exposure meter as a mask to an exposure amount in which the highest residual film level was 7 steps. Further, after the polyethylene terephthalate film (support layer) was peeled off, development was carried out at a development time twice as long as the minimum development time. The width of the line (gap) of the unexposed portion in the obtained pattern was 40 μm wide, and the gap width was measured by a microscope. For the sample of each laminated body, the case where the position of the focus at the time of exposure is focused on the surface of the substrate, and the case where the position of the focus at the time of exposure is shifted from the substrate surface to the inside of the substrate by 300 μm in the thickness direction of the substrate Pattern formation.

關於將曝光時之焦點之位置聚焦於基板表面時、與使曝光時之焦點之位置自基板表面挪移300μm時的間隙寬之差,係藉由自將曝光時之焦點之位置聚焦於基板表面時之間隙寬減去使曝光時之焦點之位置自基板表面向基板內側挪移300μm時之間隙寬而求得。 The difference in the gap width when the position of the focus at the time of exposure is focused on the surface of the substrate and the position of the focus at the time of exposure is shifted from the substrate surface by 300 μm is achieved by focusing the position of the focus at the time of exposure on the surface of the substrate. The gap width was obtained by subtracting the gap width when the position of the focus at the time of exposure was shifted from the substrate surface to the inside of the substrate by 300 μm.

<重量平均分子量> <weight average molecular weight>

藉由日本分光(股)製造之凝膠滲透層析儀(GPC)[泵:Gulliver,PU-1580型,管柱:昭和電工(股)製造之Shodex(註冊商標)(KF-807、KF-806M、KF-806M、KF-802.5)4根串聯,移動層溶劑:四氫呋喃, 使用由聚苯乙烯標準樣品(昭和電工(股)製造之Shodex STANDARD SM-105)所得之校準曲線],以聚苯乙烯換算值之形式求出重量平均分子量。 Gel permeation chromatography (GPC) manufactured by Japan Spectroscopic Co., Ltd. [Pump: Gulliver, PU-1580, column: Shodex (registered trademark) manufactured by Showa Denko (share) (KF-807, KF- 806M, KF-806M, KF-802.5) 4 in series, moving layer solvent: tetrahydrofuran, The weight average molecular weight was determined as a polystyrene-converted value using a calibration curve obtained from a polystyrene standard sample (Shodex STANDARD SM-105 manufactured by Showa Denko Co., Ltd.).

<與過氧自由基之反應速率常數> <Reaction rate constant with peroxy radicals>

根據J.Macromol.Sci.Chem.,A11(10),p1975(1977)中記載之方法。 According to the method described in J. Macromol. Sci. Chem., A11 (10), p1975 (1977).

<由殘膜率所得之γ值(伽馬值)> <γ value (gamma value) obtained from the residual film rate>

首先,以噴霧壓力0.2MPa使用研磨材(日本Carlit(股)製造,Saku random R(註冊商標# 220))對積層有35μm壓延銅箔之0.4mm厚之銅箔積層板進行噴射刷磨。 First, a 0.4 mm-thick copper foil laminate having a laminated copper foil of 35 μm laminated was spray-brushed using a polishing material (manufactured by Carlit, Japan, Saku random R (registered trademark #220)) at a spray pressure of 0.2 MPa.

其次,一邊剝離感光性樹脂積層體之聚乙烯膜(保護層),一邊於經預熱至60℃之銅箔積層板上,藉由熱輥層壓機(旭化成(股)公司製造,AL-700)以輥溫度105℃層壓感光性樹脂積層體。空氣壓力係設定為0.35MPa,層壓速度係設定為1.5m/min。 Next, the polyethylene film (protective layer) of the photosensitive resin laminate was peeled off, and the laminate was preheated to 60 ° C on a copper foil laminate, and was manufactured by Asahi Kasei Co., Ltd., AL- 700) The photosensitive resin laminate was laminated at a roll temperature of 105 °C. The air pressure was set to 0.35 MPa, and the laminating speed was set to 1.5 m/min.

其次,藉由直接描繪式曝光裝置(Orbotech(股)製造,Paragon-Ultra 100),以Stauffer製41級階段式曝光表作為遮罩,以各種曝光量進行曝光。此時,將曝光時之焦點之位置聚焦於基板表面。 Next, a direct-drawing type exposure apparatus (manufactured by Orbotech Co., Ltd., Paragon-Ultra 100) was used as a mask by a 41-stage stage exposure meter manufactured by Stauffer, and exposure was performed at various exposure amounts. At this time, the position of the focus at the time of exposure is focused on the surface of the substrate.

進而,剝離聚對苯二甲酸乙二酯膜(支撐層)後,使用鹼性顯影機(富士機工製造,乾膜用顯影機)以特定時間噴霧30℃之1質量%Na2CO3水溶液,以最小顯影時間之2倍時間將感光性樹脂層之未曝光部分溶解去除。 Further, after the polyethylene terephthalate film (support layer) was peeled off, an aqueous solution of 1% by mass Na 2 CO 3 at 30 ° C was sprayed for a predetermined time using an alkaline developing machine (manufactured by Fuji Machine Co., Ltd., a dry film developing machine). The unexposed portion of the photosensitive resin layer was dissolved and removed by twice the minimum development time.

藉由表面粗度形狀測定機(東京精密(股)製造,SURFCOM 575A)測定藉由以上操作而獲得之硬化抗蝕劑圖案之膜厚,由該膜厚求得殘膜率。又,根據曝光量與Stauffer製41級階段式曝光表之穿透率算出實質曝光量。根據該殘膜率與實質曝光量求得γ值。再者,γ值之計算方法可藉由「感光性樹脂從頭學起,P.60,池田章彥、水野晶好著,工業調查會」中記載之方法而求得。 The film thickness of the hardened resist pattern obtained by the above operation was measured by a surface roughness measuring machine (manufactured by Tokyo Seiko Co., Ltd., SURFCOM 575A), and the residual film ratio was determined from the film thickness. Further, the substantial exposure amount was calculated from the exposure amount and the transmittance of the 41-stage stage exposure meter manufactured by Stauffer. The γ value was obtained from the residual film ratio and the substantial exposure amount. In addition, the calculation method of the gamma value can be obtained by the method described in "The photosensitive resin is learned from the beginning, P.60, Ikeda Akiko, Mizuno, and the industrial investigation meeting".

<由C=C雙鍵之反應率所得之γ值(伽馬值)> <γ value (gamma value) obtained from the reaction rate of the C=C double bond>

自感光性樹脂積層體之聚對苯二甲酸乙二酯膜(支撐層)側,藉由直接描繪式曝光裝置(Orbotech(股)製造,Paragon-Ultra 100)以Stauffer製41級階段式曝光表作為遮罩,以各種曝光量進行曝光。此時,將曝光時之焦點之位置聚焦於抗蝕劑底部。 From the side of the polyethylene terephthalate film (support layer) of the photosensitive resin laminate, a 41-stage stage exposure meter was prepared by Stauffer by a direct drawing exposure apparatus (Orragon Co., Paragon-Ultra 100). As a mask, exposure is performed at various exposure amounts. At this time, the position of the focus at the time of exposure is focused on the bottom of the resist.

藉由FT-IR(Thermo SCIENTIFIC製造,NICOLET 380)求得藉由以上操作而獲得之硬化抗蝕劑圖案之C=C雙鍵之反應率。再者,C=C雙鍵係測定810cm-1之波峰高度。又,根據曝光量與Stauffer製41級階段式曝光表之穿透率算出實質曝光量。根據該C=C雙鍵之反應率與實質曝光量求出γ值。再者,γ值之計算方法係與上述相同。 The reaction rate of the C=C double bond of the hardened resist pattern obtained by the above operation was determined by FT-IR (manufactured by Thermo SCIENTIFIC, NICOLET 380). Further, the C=C double bond system measures the peak height of 810 cm -1 . Further, the substantial exposure amount was calculated from the exposure amount and the transmittance of the 41-stage stage exposure meter manufactured by Stauffer. The γ value was obtained from the reaction rate of the C=C double bond and the substantial exposure amount. Furthermore, the calculation method of the γ value is the same as described above.

<感光性樹脂組合物調和液之色相穩定性> <Hue phase stability of photosensitive resin composition blending liquid>

使用紫外-可見光(UV-Vis)測定裝置(日立日立高新技術(股)製造,U-3010形分光光度計)如以下般測定感光性樹脂積層體之600nm及630nm之穿透率: The transmittance of the photosensitive resin laminate at 600 nm and 630 nm was measured by using an ultraviolet-visible (UV-Vis) measuring device (manufactured by Hitachi Hitachi High-Tech Co., Ltd., U-3010 spectrophotometer) as follows:

(i)剝離感光性樹脂積層體之聚乙烯膜並測定600nm及630nm之穿透率。 (i) The polyethylene film of the photosensitive resin laminate was peeled off and the transmittance at 600 nm and 630 nm was measured.

(ii)使用在40℃下保存3天後之感光性樹脂組合物調和液製作感光性樹脂積層體,剝離該感光性樹脂積層體之聚乙烯膜並測定600nm及630nm之穿透率。 (ii) A photosensitive resin laminate was prepared by using a photosensitive resin composition preparation liquid which was stored at 40 ° C for 3 days, and the polyethylene film of the photosensitive resin laminate was peeled off, and the transmittances at 600 nm and 630 nm were measured.

藉由(ii)之穿透率-(i)之穿透率之計算而求出色相之變化。 The change in hue is obtained by calculation of the transmittance of (ii) penetration rate - (i).

[實施例1~11及比較例1~15] [Examples 1 to 11 and Comparative Examples 1 to 15]

將表1及2所示之組成(其中,各成分之數字係表示作為固形物成分之調配量(質量份))之感光性樹脂組合物及溶劑(甲基乙基酮及乙醇)充分攪拌、混合,獲得感光性樹脂組合物調和液(感光性樹脂組合物成為55質量%之溶液)。準備16μm厚之聚對苯二甲酸乙二酯膜(帝人杜邦薄膜(股)製造,GR-16)作為支撐層,使用棒塗機於該膜之表面上均 勻塗佈感光性樹脂組合物調和液,於95℃之乾燥器中乾燥4分鐘,形成感光性樹脂層。感光性樹脂層之厚度為35μm。 The photosensitive resin composition and the solvent (methyl ethyl ketone and ethanol) which have the composition shown in Tables 1 and 2 (the number of each component shows the compounding amount (mass part) as a solid content component) are fully stirred, The mixture was mixed to obtain a photosensitive resin composition-containing solution (a solution in which the photosensitive resin composition was 55% by mass). A 16 μm thick polyethylene terephthalate film (manufactured by Teijin DuPont Film Co., Ltd., GR-16) was prepared as a support layer, and a bar coater was used on the surface of the film. The photosensitive resin composition conditioning liquid was uniformly applied, and dried in a dryer at 95 ° C for 4 minutes to form a photosensitive resin layer. The thickness of the photosensitive resin layer was 35 μm.

繼而,於感光性樹脂層之未積層聚對苯二甲酸乙二酯膜之表面上貼合作為保護層之19μm厚之聚乙烯膜(Tamapoly(股)製造,GF-18),獲得感光性樹脂積層體。對所得感光性樹脂積層體進行各種評價。結果一併記載於表1中。又,間隙寬之差之結果於實施例1中為-5.9μm,於實施例3中為-5.2μm,於實施例4中為-5.6μm,於實施例5中為-6.0μm,於比較例1中為-7.5μm,於比較例2中為-9.5μm。又,由殘膜率所得之γ值(伽馬值)之結果於實施例4中為1.3,於實施例5中為0.6。由C=C雙鍵之反應率所得之γ值(伽馬值)之結果於實施例3中為0.192,於比較例1中為0.177。 Then, a 19 μm thick polyethylene film (manufactured by Tamapoly Co., Ltd., GF-18) which adhered to a protective layer on the surface of the uncovered polyethylene terephthalate film of the photosensitive resin layer was obtained to obtain a photosensitive resin. Laminated body. Various evaluations were performed on the obtained photosensitive resin laminate. The results are also shown in Table 1. Further, the result of the difference in the gap width was -5.9 μm in Example 1, -5.2 μm in Example 3, -5.6 μm in Example 4, and -6.0 μm in Example 5, in comparison. In Example 1, it was -7.5 μm, and in Comparative Example 2, it was -9.5 μm. Further, the result of the γ value (gamma value) obtained from the residual film ratio was 1.3 in Example 4 and 0.6 in Example 5. The γ value (gamma value) obtained from the reaction rate of the C=C double bond was 0.192 in Example 3 and 0.177 in Comparative Example 1.

將利用蝕刻之L/S=60/60μm之電路圖案製作重複8次,嘗試積層,結果最表面之起伏為約30μm。於此時之最表面之電路圖案中,比較例1之組成之情況下觀察到銅線之短路,實施例3之組成之情況下未觀察到短路,推測可減少不良。 The circuit pattern of L/S = 60/60 μm by etching was repeated eight times, and lamination was attempted, and the undulation of the outermost surface was about 30 μm. In the circuit pattern on the outermost surface at this time, in the case of the composition of Comparative Example 1, a short circuit of the copper wire was observed, and in the case of the composition of Example 3, no short circuit was observed, and it was presumed that the defect was reduced.

[實施例12] [Embodiment 12]

將表1所示之實施例1之H-1(1質量份)換成1,1,3-三(2-甲基-4-羥基-5-第三丁基苯基)丁烷(與過氧化自由基之反應速率常數=45.4L‧mol-1‧sec-1)(1質量份),除此以外設定為與實施例1相同。其結果,感度(必要曝光量)為21mJ/cm2,解析度(通常)為18μm,解析度(焦點挪移)為30μm,解析度之差為12μm。 H-1 (1 part by mass) of Example 1 shown in Table 1 was changed to 1,1,3-tris(2-methyl-4-hydroxy-5-t-butylphenyl)butane (with The reaction rate constant of the peroxide radical = 45.4 L ‧ mol -1 ‧ sec -1 ) (1 part by mass) was set to be the same as in Example 1. As a result, the sensitivity (required exposure amount) was 21 mJ/cm 2 , the resolution (usually) was 18 μm, the resolution (focus shift) was 30 μm, and the difference in resolution was 12 μm.

[比較例16] [Comparative Example 16]

將表1所示之實施例1之H-1(1質量份)換成H-4(1質量份),除此以外設定與實施例1相同。其結果,感度(必要曝光量)為80mJ/cm2,解析度(通常)為45μm。 The same procedure as in Example 1 was carried out except that H-1 (1 part by mass) of Example 1 shown in Table 1 was changed to H-4 (1 part by mass). As a result, the sensitivity (required exposure amount) was 80 mJ/cm 2 and the resolution (usually) was 45 μm.

關於感光性樹脂組合物調和液之色相穩定性之結果,實施例1中 600nm下為1%,630nm下為5%,實施例3中600nm下為0%,630nm下為5%,實施例12中600nm下為2%,630nm下為7%,比較例1中600nm下為0%,630nm下為5%,比較例2中600nm下為-21%,630nm下為3%,比較例8中600nm下為5%,630nm下為11%,比較例9中600nm下為11%,630nm下為27%,比較例16中600nm下為-41%,630nm下為-8%。關於比較例13、14、15,於通常之(i)之穿透率之時點下脫色極大,故而若以(ii)之穿透率-比較例1之(i)之穿透率之計算而求出,則比較例13中600nm下為12%,630nm下為30%,比較例14中600nm下為16%,630nm下為37%,比較例15中600nm下為16%,630nm下為37%。 As a result of the hue stability of the photosensitive resin composition blending solution, in Example 1. 1% at 600nm, 5% at 630nm, 0% at 600nm in Example 3, 5% at 630nm, 2% at 600nm in Example 12, 7% at 630nm, and 600nm in Comparative Example 1 It is 0%, 5% at 630 nm, -21% at 600 nm in Comparative Example 2, 3% at 630 nm, 5% at 600 nm in Comparative Example 8, 11% at 630 nm, and 600% at 630 nm in Comparative Example 9. 11%, 27% at 630 nm, -41% at 600 nm in Comparative Example 16, and -8% at 630 nm. With respect to Comparative Examples 13, 14, and 15, the discoloration was extremely large at the time point of the usual (i) transmittance, and therefore, the transmittance of (ii) - the transmittance of (i) of Comparative Example 1 was calculated. The comparison was found to be 12% at 600 nm in Comparative Example 13 and 30% at 630 nm, 16% at 600 nm in Comparative Example 14, 37% at 630 nm, 16% at 600 nm in Comparative Example 15, and 37 at 630 nm. %.

由表1及2之結果可讀取以下內容。 The following can be read from the results of Tables 1 and 2.

根據實施例與比較例之對比,若使用本實施形態之感光性樹脂組合物,則可表現高解析性,尤其於曝光時之焦點挪移時亦可表現出高解析性。進而亦可維持高感度。藉由使用該感光性樹脂組合物,應用於多層配線之情形時亦可於藉由蝕刻法形成電路時抑制短路問題。 According to the comparison between the examples and the comparative examples, when the photosensitive resin composition of the present embodiment is used, high resolution can be exhibited, and in particular, high resolution can be exhibited even when the focus is shifted during exposure. Furthermore, high sensitivity can be maintained. When the photosensitive resin composition is used, when it is applied to a multilayer wiring, the short-circuit problem can be suppressed when a circuit is formed by an etching method.

[產業上之可利用性] [Industrial availability]

本實施形態之感光性樹脂積層體可表現出高感度及高解析性,尤其於曝光時之焦點挪移時亦可表現出高解析性,因此即便於因基板之翹曲及變形、曝光裝置之設定不良等而使曝光時之焦點之位置自基板表面挪移時,亦可於藉由蝕刻法形成電路時防止短路問題,於藉由鍍敷法形成電路時防止缺損、斷線、鍍敷不良等問題。故而,該感光性樹脂積層體可較佳用於製造印刷配線板、可撓性基板、導線架基 板、COF(Chip On Film)用基板、半導體封裝用基板、液晶用透明電極、液晶用TFT用配線、PDP(Plasma Display Panel)用電極等導體圖案。 The photosensitive resin laminate of the present embodiment can exhibit high sensitivity and high resolution, and can exhibit high resolution even when the focus is shifted during exposure. Therefore, even if the substrate is warped and deformed, the exposure device is set. When the position of the focus at the time of exposure is shifted from the surface of the substrate due to defects or the like, the short circuit problem can be prevented when the circuit is formed by the etching method, and defects such as defects, disconnection, plating failure, and the like can be prevented when the circuit is formed by the plating method. . Therefore, the photosensitive resin laminate can be preferably used for manufacturing a printed wiring board, a flexible substrate, and a lead frame base. A conductor pattern such as a plate, a COF (Chip On Film) substrate, a semiconductor package substrate, a liquid crystal transparent electrode, a liquid crystal TFT wiring, or a PDP (Plasma Display Panel) electrode.

Claims (14)

一種感光性樹脂組合物,其係含有(A)鹼可溶性高分子、(B)具有乙烯性不飽和雙鍵之化合物、(C)光聚合起始劑、及(D)苯酚衍生物者,上述感光性樹脂組合物係以感光性樹脂組合物之總固形物成分質量基準計,含有上述(A)鹼可溶性高分子:10質量%~90質量%,上述(B)具有乙烯性不飽和雙鍵之化合物:5質量%~70質量%,上述(C)光聚合起始劑:0.01質量%~20質量%,及上述(D)苯酚衍生物:0.001質量%~10質量%;且上述(C)光聚合起始劑含有吖啶類,上述(D)苯酚衍生物含有與過氧自由基之反應速率常數為20Lmol-1‧sec-1以上之化合物。 A photosensitive resin composition containing (A) an alkali-soluble polymer, (B) a compound having an ethylenically unsaturated double bond, (C) a photopolymerization initiator, and (D) a phenol derivative, The photosensitive resin composition contains the above-mentioned (A) alkali-soluble polymer: 10% by mass to 90% by mass based on the total solid content of the photosensitive resin composition, and the (B) has an ethylenically unsaturated double bond. The compound: 5 mass% to 70 mass%, the above (C) photopolymerization initiator: 0.01% by mass to 20% by mass, and the above (D) phenol derivative: 0.001% by mass to 10% by mass; and the above (C) The photopolymerization initiator contains an acridine, and the (D) phenol derivative contains a compound having a reaction rate constant with a peroxy radical of 20 Lmol -1 ‧ sec -1 or more. 如請求項1之感光性樹脂組合物,其中於基板表面上形成包含上述感光性樹脂組合物之感光性樹脂層並進行曝光及顯影所獲得的抗蝕劑圖案中,於將焦點位置聚焦於該基板表面並進行該曝光時之圖案解析度a、與將焦點位置聚焦於自該基板表面於該基板之厚度方向上向基板內側挪移300μm之位置並進行該曝光時之圖案解析度b之差未達15μm。 The photosensitive resin composition of claim 1, wherein a resist pattern obtained by forming a photosensitive resin layer containing the photosensitive resin composition on the surface of the substrate and performing exposure and development is focused on the focus position The pattern resolution a at the time of the exposure of the substrate surface, and the difference in the pattern resolution b when the focus position is focused on the substrate from the substrate in the thickness direction of the substrate by 300 μm and the exposure is performed. Up to 15μm. 如請求項1之感光性樹脂組合物,其中含有下述通式(I)所表示之化合物作為(D)苯酚衍生物: {式中,R1表示可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基,複數個R1可彼此相同亦可不同,m表示0~4之整數,n表示1以上之整數,並且,n為1時A為一價有機基,n為2以上時A表示二價以上之有機基、單鍵或包含共軛鍵之連結基}。 The photosensitive resin composition of claim 1, which comprises a compound represented by the following formula (I) as (D) a phenol derivative: Wherein R 1 represents a linear alkyl group which may be substituted, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group which mediates a divalent linking group, a branched alkyl group which mediates a divalent linking group, and an intermediate divalent group The aryl group of the cyclohexyl group or the intermediate divalent linking group of the linking group, the plurality of R 1 's may be the same or different from each other, m represents an integer of 0 to 4, n represents an integer of 1 or more, and when n is 1, A is a The valence organic group, when n is 2 or more, A represents a divalent or higher organic group, a single bond or a linking group containing a conjugated bond}. 如請求項3之感光性樹脂組合物,其中上述通式(I)中之n為2以上。 The photosensitive resin composition of claim 3, wherein n in the above formula (I) is 2 or more. 如請求項1之感光性樹脂組合物,其中含有下述通式(II)所表示之化合物作為(D)苯酚衍生物: {式中,R2表示可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基,並且R3、R4及R5各自獨立表示氫或可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基}。 The photosensitive resin composition of claim 1, which comprises a compound represented by the following formula (II) as (D) a phenol derivative: Wherein R 2 represents a linear alkyl group which may be substituted, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group which mediates a divalent linking group, a branched alkyl group which mediates a divalent linking group, and an intermediate divalent group An aryl group of a cyclohexyl group or an intermediate divalent linking group, and each of R 3 , R 4 and R 5 independently represents hydrogen or a substituted linear alkyl group, a branched alkyl group, an aryl group, a cyclohexyl group, or an intermediate a linear alkyl group of a valent linking group, a branched alkyl group of an intermediate divalent linking group, a cyclohexyl group of an intermediate divalent linking group or an aryl group of an intermediate divalent linking group}. 如請求項1之感光性樹脂組合物,其中含有下述通式(III)所表示 之化合物作為(D)苯酚衍生物: {式中,R6及R7各自獨立表示可經取代之直鏈烷基、分支烷基、芳基、環己基、中介二價連結基之直鏈烷基、中介二價連結基之分支烷基、中介二價連結基之環己基或中介二價連結基之芳基,複數個R6及R7可彼此相同亦可不同,p及q各自獨立表示0~4之整數,並且B表示單鍵或包含共軛鍵之連結基}。 The photosensitive resin composition of claim 1, which comprises a compound represented by the following formula (III) as (D) a phenol derivative: Wherein R 6 and R 7 each independently represent a linear alkyl group, a branched alkyl group, an aryl group, a cyclohexyl group, a linear alkyl group having an intermediate divalent linking group, and a branched alkyl group intervening a divalent linking group; a plurality of R 6 and R 7 may be the same or different from each other, and p and q each independently represent an integer of 0 to 4, and B represents a single group. A bond or a linker containing a conjugate bond}. 如請求項6之感光性樹脂組合物,其中於上述式(III)中,B為單鍵。 The photosensitive resin composition of claim 6, wherein in the above formula (III), B is a single bond. 如請求項6之感光性樹脂組合物,其中於上述式(III)中,p=q=0。 The photosensitive resin composition of claim 6, wherein in the above formula (III), p = q = 0. 如請求項1至8中任一項之感光性樹脂組合物,其中(A)鹼可溶性高分子之單體成分具有芳香族烴基。 The photosensitive resin composition according to any one of claims 1 to 8, wherein the monomer component of the (A) alkali-soluble polymer has an aromatic hydrocarbon group. 一種感光性樹脂積層體,其係於支撐層上積層包含如請求項1至9中任一項之感光性樹脂組合物之感光性樹脂層而成者。 A photosensitive resin laminate which is obtained by laminating a photosensitive resin layer containing the photosensitive resin composition according to any one of claims 1 to 9 on a support layer. 一種抗蝕劑圖案之形成方法,其包含:將如請求項10之感光性樹脂積層體積層於基板上之積層步驟、將該感光性樹脂積層體之感光性樹脂層曝光之曝光步驟、及將該感光性樹脂層之未曝光部進行顯影去除的顯影步驟。 A method for forming a resist pattern, comprising: a step of laminating a photosensitive resin laminated layer on a substrate according to claim 10; an exposing step of exposing the photosensitive resin layer of the photosensitive resin laminate; and The developing step of developing and removing the unexposed portion of the photosensitive resin layer. 如請求項11之抗蝕劑圖案之形成方法,其中藉由利用描繪圖案之直接描繪的曝光方法、或使光罩之圖像經過透鏡而投影之曝光方法進行上述曝光步驟。 The method of forming a resist pattern according to claim 11, wherein the exposing step is performed by an exposure method using a direct drawing of a drawing pattern or an exposure method of projecting an image of the mask through a lens. 如請求項12之抗蝕劑圖案之形成方法,其中藉由利用描繪圖案之直接描繪的曝光方法進行上述曝光步驟。 The method of forming a resist pattern of claim 12, wherein the exposing step is performed by an exposure method using direct drawing of a drawing pattern. 如請求項1至8中任一項之感光性樹脂組合物,其係用於藉由利用描繪圖案直接描繪的曝光方法進行曝光步驟之抗蝕劑圖案之形成方法中。 The photosensitive resin composition according to any one of claims 1 to 8, which is used in a method of forming a resist pattern by performing an exposure step by an exposure method directly drawing a drawing pattern.
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