TWI591756B - 用以監測多工加熱器陣列之溫度與控制該加熱器陣列的系統及方法 - Google Patents
用以監測多工加熱器陣列之溫度與控制該加熱器陣列的系統及方法 Download PDFInfo
- Publication number
- TWI591756B TWI591756B TW105104698A TW105104698A TWI591756B TW I591756 B TWI591756 B TW I591756B TW 105104698 A TW105104698 A TW 105104698A TW 105104698 A TW105104698 A TW 105104698A TW I591756 B TWI591756 B TW I591756B
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- Taiwan
- Prior art keywords
- temperature
- heater
- zone
- measuring
- current
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 36
- 238000012544 monitoring process Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims description 86
- 238000010438 heat treatment Methods 0.000 claims description 43
- 238000012545 processing Methods 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 8
- 238000009529 body temperature measurement Methods 0.000 claims description 6
- 238000012937 correction Methods 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000001020 plasma etching Methods 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000001816 cooling Methods 0.000 description 12
- 239000000919 ceramic Substances 0.000 description 6
- 238000010292 electrical insulation Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
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- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000001360 synchronised effect Effects 0.000 description 2
- 230000002123 temporal effect Effects 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 229910052751 metal Inorganic materials 0.000 description 1
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- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Control Of Resistance Heating (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161524546P | 2011-08-17 | 2011-08-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201620073A TW201620073A (zh) | 2016-06-01 |
| TWI591756B true TWI591756B (zh) | 2017-07-11 |
Family
ID=47715468
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105104698A TWI591756B (zh) | 2011-08-17 | 2012-08-17 | 用以監測多工加熱器陣列之溫度與控制該加熱器陣列的系統及方法 |
| TW101129983A TWI534941B (zh) | 2011-08-17 | 2012-08-17 | 用以監測多工加熱器陣列之溫度與控制該加熱器陣列的系統及方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101129983A TWI534941B (zh) | 2011-08-17 | 2012-08-17 | 用以監測多工加熱器陣列之溫度與控制該加熱器陣列的系統及方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6067705B2 (enrdf_load_stackoverflow) |
| KR (1) | KR102006508B1 (enrdf_load_stackoverflow) |
| CN (1) | CN103828031B (enrdf_load_stackoverflow) |
| TW (2) | TWI591756B (enrdf_load_stackoverflow) |
| WO (1) | WO2013025852A1 (enrdf_load_stackoverflow) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8791392B2 (en) * | 2010-10-22 | 2014-07-29 | Lam Research Corporation | Methods of fault detection for multiplexed heater array |
| US9324589B2 (en) * | 2012-02-28 | 2016-04-26 | Lam Research Corporation | Multiplexed heater array using AC drive for semiconductor processing |
| US8809747B2 (en) * | 2012-04-13 | 2014-08-19 | Lam Research Corporation | Current peak spreading schemes for multiplexed heated array |
| KR102429619B1 (ko) | 2015-11-18 | 2022-08-04 | 삼성전자주식회사 | 본딩 스테이지와 이를 포함하는 본딩 장치 |
| US9812342B2 (en) | 2015-12-08 | 2017-11-07 | Watlow Electric Manufacturing Company | Reduced wire count heater array block |
| CN106920768A (zh) | 2015-12-24 | 2017-07-04 | 中微半导体设备(上海)有限公司 | 多区主动矩阵温控系统和温控方法及其适用的静电吸盘和等离子处理装置 |
| US10366867B2 (en) | 2016-08-19 | 2019-07-30 | Applied Materials, Inc. | Temperature measurement for substrate carrier using a heater element array |
| WO2019140200A1 (en) * | 2018-01-15 | 2019-07-18 | Applied Materials, Inc. | Advanced temperature monitoring system and methods for semiconductor manufacture productivity |
| JP6971199B2 (ja) * | 2018-05-31 | 2021-11-24 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| WO2020010153A1 (en) * | 2018-07-05 | 2020-01-09 | Lam Research Corporation | Dynamic temperature control of substrate support in substrate processing system |
| US11183400B2 (en) | 2018-08-08 | 2021-11-23 | Lam Research Corporation | Progressive heating of components of substrate processing systems using TCR element-based heaters |
| CN111383891B (zh) | 2018-12-29 | 2023-03-10 | 中微半导体设备(上海)股份有限公司 | 用于半导体处理设备的温度控制装置及其温度控制方法 |
| KR102722106B1 (ko) | 2019-04-10 | 2024-10-28 | 엘에스일렉트릭(주) | 파워 디바이스 모니터링 시스템 및 모니터링 방법 |
| US12013291B2 (en) | 2020-10-14 | 2024-06-18 | Applied Materials, Inc. | Advanced temperature monitoring system with expandable modular layout design |
| KR20220095612A (ko) * | 2020-12-30 | 2022-07-07 | 세메스 주식회사 | 히터 어레이 및 히터 어레이를 포함하는 기판 처리 장치 |
| CN112614771A (zh) * | 2021-01-08 | 2021-04-06 | 上海谙邦半导体设备有限公司 | 一种反应腔装置及其工作方法 |
| KR20230031569A (ko) * | 2021-08-27 | 2023-03-07 | 세메스 주식회사 | 지지 유닛 및 기판 처리 장치 |
| CN114499654B (zh) * | 2022-04-01 | 2022-07-15 | 国开启科量子技术(北京)有限公司 | 用于校准不等臂干涉仪的电路装置和量子通信设备 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3440883A (en) * | 1966-12-01 | 1969-04-29 | Monsanto Co | Electronic semiconductor thermometer |
| JP2001045655A (ja) * | 1999-07-28 | 2001-02-16 | Fujitsu Ltd | 温度スイッチ回路 |
| KR20050053464A (ko) * | 2003-12-01 | 2005-06-08 | 정준호 | 직렬 연결된 2개의 다이오드를 이용한 반도체 기억소자 |
| US7141763B2 (en) * | 2004-03-26 | 2006-11-28 | Tokyo Electron Limited | Method and apparatus for rapid temperature change and control |
| JPWO2007023557A1 (ja) * | 2005-08-25 | 2009-02-26 | 株式会社アドバンテスト | 電子部品試験装置および電子部品試験装置における温度制御方法 |
| KR100849069B1 (ko) * | 2007-04-20 | 2008-07-30 | 주식회사 하이닉스반도체 | 정전기 방전 보호 장치 |
| US8092637B2 (en) * | 2008-02-28 | 2012-01-10 | Hitachi High-Technologies Corporation | Manufacturing method in plasma processing apparatus |
| US8168923B2 (en) * | 2008-10-14 | 2012-05-01 | Chon Meng Wong | System for heated food delivery and serving |
| JP2010153730A (ja) * | 2008-12-26 | 2010-07-08 | Omron Corp | 配線構造、ヒータ駆動装置、計測装置および制御システム |
| US8637794B2 (en) * | 2009-10-21 | 2014-01-28 | Lam Research Corporation | Heating plate with planar heating zones for semiconductor processing |
| CN201608925U (zh) * | 2010-01-13 | 2010-10-13 | 张红中 | 一种用于感应加热电源的多区控制电路 |
-
2012
- 2012-08-16 JP JP2014526191A patent/JP6067705B2/ja active Active
- 2012-08-16 CN CN201280040080.2A patent/CN103828031B/zh active Active
- 2012-08-16 KR KR1020147007098A patent/KR102006508B1/ko active Active
- 2012-08-16 WO PCT/US2012/051029 patent/WO2013025852A1/en active Application Filing
- 2012-08-17 TW TW105104698A patent/TWI591756B/zh active
- 2012-08-17 TW TW101129983A patent/TWI534941B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| CN103828031B (zh) | 2016-10-26 |
| KR102006508B1 (ko) | 2019-08-01 |
| WO2013025852A1 (en) | 2013-02-21 |
| JP6067705B2 (ja) | 2017-01-25 |
| TW201312690A (zh) | 2013-03-16 |
| TWI534941B (zh) | 2016-05-21 |
| TW201620073A (zh) | 2016-06-01 |
| CN103828031A (zh) | 2014-05-28 |
| JP2014529847A (ja) | 2014-11-13 |
| KR20140051431A (ko) | 2014-04-30 |
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