Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67242—Apparatus for monitoring, sorting or marking
  • H01L21/67248—Temperature monitoring
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Definitions

• Semiconductor substrate materials such as silicon substrates are processed by techniques which include the use of vacuum chambers. These techniques include non-plasma applications such as electron beam deposition, as well as plasma applications, such as sputter deposition, plasma-enhanced chemical vapor deposition (PECVD), resist strip, and plasma etch.
• non-plasma applications such as electron beam deposition
• plasma applications such as sputter deposition, plasma-enhanced chemical vapor deposition (PECVD), resist strip, and plasma etch.
• PECVD plasma-enhanced chemical vapor deposition
• Plasma processing systems available today are among those semiconductor fabrication tools which are subject to an increasing need for improved accuracy and repeatability.
• One metric for plasma processing systems is increased uniformity, which includes uniformity of process results on a semiconductor substrate surface as well as uniformity of process results of a succession of substrates processed with nominally the same input parameters. Continuous improvement of on-substrate uniformity is desirable. Among other things, this calls for plasma chambers with improved uniformity, consistency and self diagnostics.
• a system operable to measure temperatures of and control a multi-zone heating plate in a substrate support assembly used to support a semiconductor substrate in a semiconductor processing apparatus, the heating plate comprising a plurality of planar heater zones, a plurality of diodes, a plurality of power supply lines and a plurality of power return lines, wherein each planar heater zone is connected to one of the power supply lines and one of the power return lines, and no two planar heater zones share the same pair of power supply line and power return line, and a diode is serially connected between each planar heater zone and the power supply line connected thereto or between each planar heater zone and the power return line connected thereto such that the diode does not allow electrical current flow in a direction from the power return line through the planar heater zone to the power supply line; the system comprising: a current measurement device; a first switching arrangement configured to connect each of the power return lines selectively to an electrical ground, a voltage supply or an electrically isolated terminal, independent of the other power return
• FIG. 1 is a schematic of the cross-sectional view of a substrate support assembly in which a heating plate with an array of planar heater zones is
• the substrate support assembly also comprising an electrostatic chuck (ESC).
• ESC electrostatic chuck
• Fig. 2 illustrates the topological connection between power supply and power return lines to an array of planar heater zones in one embodiment of a heating plate which can be incorporated in a substrate support assembly.
• FIG. 3 is a schematic of an exemplary plasma processing chamber, which can include a substrate support assembly described herein.
• Fig. 4 shows exemplary current-voltage characteristics (I-V curve) of a diode connected to a planar heater zone in the heating plate.
• Fig. 5 shows a circuit diagram of a system, according to an embodiment, configured to control the heating plate and monitor temperature of each planar heater zone therein.
• Fig. 6 shows a circuit diagram of a current measurement device in the system in Fig. 5.
• a substrate support assembly may be configured for a variety of functions during processing, such as supporting the substrate, tuning the substrate temperature, and supplying radio frequency power.
• the substrate support assembly can comprise an electrostatic chuck (ESC) useful for electrostatically clamping a substrate onto the substrate support assembly during processing.
• the ESC may be a tunable ESC (T-ESC).
• T-ESC is described in commonly assigned U.S. Patent Nos. 6,847,014 and 6,921,724, which are hereby incorporated by reference.
• the substrate support assembly may comprise a ceramic substrate holder, a fluid-cooled heat sink
• cooling plate (hereafter referred to as cooling plate) and a plurality of concentric planar heater zones to realize step by step and radial temperature control.
• the cooling plate is maintained between 0 °C and 30 °C.
• the heaters are located on the cooling plate with a layer of thermal insulator in between.
• the heaters can maintain the support surface of the substrate support assembly at temperatures about 0 °C to 80 °C above the cooling plate temperature.
• the substrate support temperature profile can be changed between center hot, center cold, and uniform.
• the mean substrate support temperature can be changed step by step within the operating range of 0 to 80 °C above the cooling plate temperature.
• a small azimuthal temperature variation poses increasingly greater challenges as CD decreases with the advance of semiconductor technology.
• Controlling temperature is not an easy task for several reasons. First, many factors can affect heat transfer, such as the locations of heat sources and heat sinks, the movement, materials and shapes of the media. Second, heat transfer is a dynamic process. Unless the system in question is in heat equilibrium, heat transfer will occur and the temperature profile and heat transfer will change with time.
• the substrate temperature profile in a plasma processing apparatus is affected by many factors, such as the plasma density profile, the RF power profile and the detailed structure of the various heating the cooling elements in the chuck, hence the substrate temperature profile is often not uniform and difficult to control with a small number of heating or cooling elements. This deficiency translates to non-uniformity in the processing rate across the whole substrate and non-uniformity in the critical dimension of the device dies on the substrate.
• a heating plate for a substrate support assembly in a semiconductor processing apparatus with multiple independently controllable planar heater zones is disclosed in commonly-owned U.S. Patent Publication No. 2011/0092072, the disclosure of which is hereby incorporated by reference.
• This heating plate comprises a scalable multiplexing layout scheme of the planar heater zones and the power supply and power return lines. By tuning the power of the planar heater zones, the temperature profile during processing can be shaped both radially and azimuthally.
• this heating plate is primarily described for a plasma processing apparatus, this heating plate can also be used in other semiconductor processing apparatuses that do not use plasma.
• planar heater zones in this heating plate are preferably arranged in a defined pattern, for example, a rectangular grid, a hexagonal grid, a polar array, concentric rings or any desired pattern.
• Each planar heater zone may be of any suitable size and may have one or more heater elements. In certain embodiments, all heater elements in a planar heater zone are turned on or off together.
• power supply lines and power return lines are arranged such that each power supply line is connected to a different group of planar heater zones, and each power return line is connected to a different group of planar heater zones wherein each planar heater zone is in one of the groups connected to a particular power supply line and one of the groups connected to a particular power return line.
• a planar heater zone can be activated by directing electrical current through a pair of power supply and power return lines to which this particular planar heater zone is connected.
• the power of the heater elements is preferably smaller than 20 W, more preferably 5 to 10 W.
• the heater elements may be resistive heaters, such as polyimide heaters, silicone rubber heaters, mica heaters, metal heaters (e.g. W, Ni/Cr alloy, Mo or Ta), ceramic heaters (e.g. WC), semiconductor- heaters or carbon heaters.
• the heater elements may be screen printed, wire wound or etched foil heaters.
• each planar heater zone is not larger than four device dies being manufactured on a
• semiconductor substrate or not larger than two device dies being manufactured on a semiconductor substrate, or not larger than one device die being manufactured on a
• the thickness of the heater elements may range from 2 micrometers to 1 millimeter, preferably 5-80 micrometers.
• the total area of the planar heater zones may be up to 90% of the area of the upper surface of the substrate support assembly, e.g. 50- 90% of the area.
• the power supply lines or the power return lines may be arranged in gaps ranging from 1 to 10 mm between the planar heater zones, or in separate planes separated from the planar heater zones plane by electrically insulating layers.
• the power supply lines and the power return lines are preferably made as wide as the space allows, in order to carry large current and reduce Joule heating.
• the width of the power lines is preferably between 0.3 mm and 2 mm.
• the width of the power lines can be as large as the planar heater zones, e.g. for a 300 mm chuck, the width can be 1 to 2 inches.
• the materials of the power lines may be the same as or different from the materials of the heater elements.
• the materials of the power lines are materials with low resistivity, such as Cu, Al, W, Inconel® or Mo.
• Figs. 1-2 show a substrate support assembly comprising one embodiment of the heating plate having an array of planar heater zones 101 incorporated in two electrically insulating layers 104 A and 104B.
• the electrically insulating layers may be a polymer material, an inorganic material, a ceramic such as silicon oxide, alumina, yttria, aluminum nitride or other suitable material.
• the substrate support assembly further comprises (a) an ESC having a ceramic layer 103 (electrostatic clamping layer) in which an electrode 102 (e.g. monopolar or bipolar) is embedded to electrostatically clamp a substrate to the surface of the ceramic layer 103 with a DC voltage, (b) a thermal barrier layer 107, (c) a cooling plate 105 containing channels 106 for coolant flow.
• each of the planar heater zones 101 is connected to one of the power supply lines 201 and one of the power return lines 202.
• No two planar heater zones 101 share the same pair of power supply 201 line and power return 202 line.
• aiTangements it is possible to connect a pair of power supply 201 and power return 202 lines to a power supply (not shown), whereby only the planar heater zone connected to this pair of lines is turned on.
• the time-averaged heating power of each planar heater zone can be individually tuned by time-domain multiplexing.
• a diode 250 is serially connected between each planar heater zone 101 and the power supply line 201 connected thereto (as shown in Fig. 2), or between each planar heater zone 101 and the power return line 202 connected thereto (not shown) such that the diode 250 does not allow electrical current flow in a direction from the power return line 201 through the planar heater zone 101 to the power supply line 202,
• the diode 250 is physically located in or adjacent the planar heater zone.
• a substrate support assembly can comprise an embodiment of the heating plate, wherein each planar heater zone of the heating plate is of similar size to or smaller than a single device die or group of device dies on the substrate so that the substrate temperature, and consequently the plasma etching process, can be controlled for each device die position to maximize the yield of devices from the substrate.
• the heating plate can include 10-100, 100-200, 200-300 or more planar heating zones. The scalable architecture of the heating plate can readily
• the substrate support assembly can comprise features such as lift pins for lifting the substrate, helium back cooling, temperature sensors for providing temperature feedback signals, voltage and current sensors for providing heating power feedback signals, power feed for heaters and/or clamp electrode, and/or RF filters.
• FIG. 3 shows a schematic of a plasma processing chamber comprising a chamber 713 in which an upper showerhead electrode 703 and a substrate support assembly 704 are disposed.
• a substrate 712 is loaded through a loading port 711 onto the substrate support assembly 704.
• a gas line 709 supplies process gas to the upper showerhead electrode 703 which delivers the process gas into the chamber.
• a gas source 708 e.g. a mass flow controller power supplying a suitable gas mixture
• a RF power source 702 is connected to the upper showerhead electrode 703.
• the chamber is evacuated by a vacuum pump 710 and the RF power is capacitively coupled between the upper showerhead electrode 703 and a lower electrode in the substrate support assembly 704 to energize the process gas into a plasma in the space between the substrate 712 and the upper showerhead electrode 703.
• the plasma can be used to etch device die features into layers on the substrate 712.
• the substrate support assembly 704 may have heaters incorporated therein. It should be appreciated that while the detailed design of the plasma processing chamber may vary, RF power is coupled to the plasma through the substrate support assembly 704. [0022] Electrical power supplied to each planar heater zone 101 can be adjusted based on the actual temperature thereof in order to achieve a desired substrate support temperature profile.
• the actual temperature at each planar heater zone 101 can be monitored by measuring a reverse saturation current of the diode 250 connected thereto.
• Fig. 4 shows exemplary current- voltage characteristics (I-V curve) of the diode 250.
• I-V curve current- voltage characteristics
• Fig. 5 shows a circuit diagram of a system 500 configured to control the heating plate and monitor temperature of each planar heater zone 101 therein by measuring the reverse saturation current /, ⁇ of the diode 250 connected to each planar heater zone 101. For simplicity, only four planar heater zones are shown. This system 500 can be configured to work with any number of planar heater zones.
• the system 500 comprises a current measurement device 560, a switching arrangement 1000, a switching arrangement 2000, an optional on-off switch 575, an optional calibration device 570.
• the switching arrangement 1000 is configured to connect each power return line 202 selectively to the electrical ground, a voltage source 520 or an electrically isolated terminal, independent of the other power return lines.
• the switching arrangement 2000 is configured to selectively connect each power supply line 201 to an electrical ground, a power source 510, the current measurement device 560 or an electrically isolated terminal, independent of the other power supply lines.
• the voltage source 520 supplies non-negative voltage.
• the optional calibration device 570 can be provided for calibrating the relationship between the reverse saturation current /, ⁇ of each diode 250 and its temperature T.
• the calibration device 570 comprises a calibration heater 571 thermally isolated from the planar heater zones 101 and the diodes 250, a calibrated temperature meter 572 (e.g. a thermal couple) and a calibration diode 573 of the same type as
• the calibration device 570 can be located in the system 500.
• the calibration heater 571 and the temperature meter 572 can be powered by the voltage source 520.
• the cathode of the calibration diode 573 is configured to connect to the voltage source 520 and the anode is connected to the current measurement device 560 through the on-off switch 575 (i.e. the calibration diode 573 is reverse biased).
• the calibration heater 571 maintains the calibration diode 573 at a temperature close to operating temperatures of the planar heater zones 101 (e.g. 20 to 200 °C).
• a processor 5000 e.g.
• a micro controller unit controls the switching arrangement 1000 and 2000, the calibration device 570 and the switch 575, receives current readings from the current measurement device 560, and receives temperature readings from the calibration device 570.
• the processor 5000 can be included in the system 500.
• the current measurement device 560 can be any suitable device such as an amp meter or a device based on an operational amplifier (op amp) as shown in Fig. 6.
• An electrical current to be measured flows to an input terminal 605, which is connected to the inverting input 601a of an op amp 601 through an optional capacitor 602.
• the inverting input 601a of the op amp 601 is also connected to the output 601c of the op amp 601 through a resistor 603 of a resistance Rl.
• the non- inverting input 601b of the op amp 601 is connected to electrical ground.
• the device shown in Fig. 6 converts a current signal of a diode (one of the diodes 250 or the calibration diode 573) on the input terminal 605 to a voltage signal on the output terminal 606 to be sent to the processor 5000 as a temperature reading.
• a method for measuring temperatures of and controlling the heating template comprises a temperature measurement step that includes connecting the power supply line 201 connected to a planar heater zone 101 to the current measurement device 560, connecting all the other power supply line(s) to electrical ground, connecting the power return line 202 connected to the planar heater zone 101 to the voltage source 520, connecting all the other power return line(s) to an electrically isolated terminal, taking a current reading of a reverse saturation current of the diode 250 serially connected to the planar heater zone 101 from the current measurement device 560, calculating the temperature T of the planar heater zone 101 from the current reading based on Eq.
• the method further comprises a powering step after the temperature measurement step, the powering step including maintaining a connection between the power supply line 201 connected to the planar heater zone 101 and the power supply 510 and a connection between the power return line 202 connected to the planar heater zone 101 and electrical ground for the time duration t.
• the method can further comprise repeating the temperature measurement step and the powering step on each of the planar heater zones 101.
• the method can further comprise an optional discharge step before conducting the temperature measurement step on a planar heater zone 101, the discharge step including connecting the power supply line 201 connected to the planar heater zone 101 to ground to discharge the junction capacitance of the diode 250 connected to the planar heater zone 101.
• the method can further comprise an optional zero point correction step before conducting the temperature measurement step on a planar heater zone 101, the zero point correction step including connecting the power supply line 201 connected to the planar heater zone 101 to the current measurement device 560, connecting all the other power supply line(s) to the electrical ground, connecting the power return line 202 connected to the planar heater zone 101 to the electrical ground, connecting each of the other power return lines to an electrically isolated terminal, taking a current reading (zero point current) from the current measurement device 560.
• the zero point current can be subtracted from the current reading in the temperature measurement step, before calculating the temperature T of the planar heater zone.
• the zero point correction step eliminates errors resulting from any leakage current from the power supply 510 through the switching arrangement 2000. All of the measuring, zeroing and discharge steps may be performed with sufficient speed to use synchronous detection on the output of operational amplifier 601 by controller 5000 or additional synchronous detection electronics. Synchronous detection of the measured signal may reduce measurement noise and improve accuracy.
• the method can further comprise an optional calibration step to correct any temporal shift of temperature dependence of the reverse saturation current of any diode 250.
• the calibration step includes disconnecting all power supply lines 201 and power return lines 202 from the current measurement device 560, closing the on-off switch 575, heating the calibration diode 573 with the calibration heater 571 to a temperature preferably in a working temperature range of the diodes 250, measuring the temperature of the calibration diode 573 with the calibrated temperature meter 572, measuring the reverse saturation current of the calibration diode 573, and adjusting the parameters A and y in Eq. 1 for each diode 250 based on the measured temperature and measured reverse saturation current.
• a method of processing a semiconductor in a plasma etching apparatus comprising a substrate support assembly and the system described herein, comprises (a) supporting a semiconductor substrate on the substrate support assembly, (b) creating a desired temperature profile across the heating plate by powering the planar heater zones therein with the system, (c) energizing a process gas into a plasma, (d) etching the semiconductor with the plasma, and (e) during etching the semiconductor with the plasma maintaining the desired temperature profile using the system.
• the system maintains the desired temperature profile by measuring a temperature of each planar heater zone in the heating plate and powering each planar heater zone based on its measured temperature. The system measures the temperature of each planar heater zone by taking a current reading of a reverse saturation current of the diode serially connected to the planar heater zone.

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• 2012
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