TWI587333B - Ceramic capacitor structure - Google Patents

Description

Ceramic capacitor structure

The invention provides a ceramic capacitor structure, in particular, a ceramic wall layer is used to cover the surface of at least one electrode layer, so that the dielectric ceramic body is thinned, and the ceramic wall layer is tightly bonded to the surface of the electrode layer to avoid defects. In order to achieve the effect of reducing the thickness, increasing the capacitance value and avoiding electrical arcing.

According to the booming development of the electronics industry, technology is constantly improving, and research and development are improving in a light, short, and short direction. Therefore, not only related structures, housings, or heat-dissipating components are being reduced in size, but also in electronics. In the field of components, it is also required by customers to reduce the volume. However, for capacitor products, because of the capacitance value, it is necessary to reduce the volume without reducing the capacitance value, so as to effectively reduce the occupied space, otherwise the volume and capacitance values. After it becomes smaller, more capacitors need to be installed in the product, so there is no effect of reducing the space. In addition, since the capacitor will cause arcing, it is necessary to solve the problem of arc jumping, so the research and development direction It must have the effect of reducing the volume, increasing the capacitance value and avoiding arc jumping.

Referring to the twelfth figure, the conventional method is to fabricate the electrode A0 on the surface of the ceramic layer A by printing, but it is easy to produce defects such as unevenness or depression, and the above defects are likely to cause incomplete surface insulation coating. Problems such as bubbles and tiny holes are generated, and the dielectric coefficient of the bubbles is relatively low with respect to the insulating material, and the equivalent capacitance of the ceramic material is larger than that of the insulating material The equivalent capacitance is greater than the equivalent capacitance of the bubble, so that the electric field will concentrate in the bubble, and with the gas pressure or other factors, the electric field in the bubble will be enhanced, and the gas in the bubble will be freed, when the ceramic capacitor When the voltage rises, the equivalent capacitance of the bubble is the smallest, so it is most likely to be broken and the arc is generated. When the bubble is broken down, it will be short-circuited instantaneously, and a large amount of current will cause damage, so that the withstand voltage of the ceramic capacitor drops, and The interlocking causes the destruction of ceramic materials and insulating materials, and even the problem of burning ceramic capacitors, especially when the edge is smaller than T, it is more likely to cause arc jumping.

Therefore, some manufacturers have developed a ceramic capacitor, as shown in Fig. 13, which has a bulk ceramic layer A, and the ceramic layer A has a central portion A1 and its surrounding convex upwards with a thicker thickness. In the portion A2, the lower surface of the ceramic layer A is provided with a flat bottom electrode B, the upper surface of the ceramic layer A is provided with an upper electrode C, and the upper electrode C has a depressed portion C1 on the upper surface of the central portion A1, and the outer portion of the depressed portion C1 is extended and curved. The convex portion C2 on the upper surface of the thickened portion A2 mainly uses the thickened portion A2 to increase the distance between the lower electrode B and the raised portion C2 of the upper electrode C to improve the withstand voltage value. Solving the problem of withstand voltage value and reducing the volume, but since the thickening portion A2 increases the distance between the lower electrode B and the upper electrode C, the capacitance value of the product also decreases, and the peripheral electrode of the lower electrode B and the upper electrode C The outer periphery of the raised portion C2 still produces defects of unevenness or depression.

After the ceramic capacitor is fabricated, an insulating material is externally coated to form an insulator, and the inside of the insulator may have bubbles and impurities, and the bubbles and impurities have a low dielectric constant relative to the insulating material, so that the ceramic capacitor is After the insulator is coated, it is not possible to pass through the insulator to avoid arcing.

The above-mentioned ceramic capacitors have many problems and are missing. The inventor and the people who work in this industry are aiming to improve.

Therefore, in view of the above-mentioned shortcomings, the inventors have collected relevant materials, and through multi-party evaluation and consideration, and through years of experience in the industry, through continuous trial and modification, the invention patents of such ceramic capacitor structures have been designed.

The main object of the present invention is to fabricate a dielectric ceramic body green body by using a first dielectric ceramic material, printing an electrode layer on the upper and lower surfaces of the dielectric ceramic body, and then using the second dielectric ceramic material to form a ceramic wall. The layered embryos are covered by the ceramic wall layer on the surface of at least one of the conductive layers, and the ceramic wall layer is tightly bonded to the surface of the electrode layer to solve the defects generated on the surface of the electrode layer, and the defects cause the insulation layer to be incompletely covered, and bubbles are generated. The tiny holes are easy to cause the arc jump of the electric appliance, so the thickness of the dielectric ceramic body can be reduced, thereby achieving the triple effect of reducing the thickness of the product, increasing the capacitance value and avoiding electric arc jump.

A secondary object of the present invention is to form a dielectric ceramic body by using a first dielectric ceramic material, and to form a ceramic wall layer by using a second dielectric ceramic material, and covering the ceramic wall layer with at least one electrode layer Surface, because the ceramic wall layer has the advantage of not being damaged by collision, the purpose of avoiding product damage can be achieved.

1‧‧‧dielectric ceramic body

2‧‧‧electrode layer

3‧‧‧Ceramic wall layer

30‧‧‧ empty slots

4‧‧‧ Conductive layer

5‧‧‧ pins

51‧‧‧Docking Department

52‧‧‧ Solder

6‧‧‧Insulating outer layer

A‧‧‧ceramic layer

A0‧‧‧electrode

A1‧‧‧Central Department

A2‧‧‧ Thickening Department

B‧‧‧ lower electrode

C‧‧‧Upper electrode

C1‧‧‧Depression

C2‧‧‧ raised parts

The first figure is a side cross-sectional view of a dielectric ceramic body blank of the present invention.

The second drawing is a side cross-sectional view of the printed electrode layer of the present invention.

The third figure is a side cross-sectional view of the ceramic wall layer of the present invention after stacking.

The fourth figure is a side cross-sectional view of the second metallization of the present invention.

The fifth figure is a top view of the rectangular capacitor clip of the present invention.

Figure 6 is a top plan view of the circular capacitor of the present invention.

The seventh figure is a top view of the rectangular capacitor coated insulating outer layer of the present invention.

The eighth figure is a plan view of the circular capacitor coated with an insulating outer layer of the present invention.

Figure 9 is a flow chart showing the steps of a preferred embodiment of the present invention.

Figure 11 is a flow chart showing the steps of another embodiment of the present invention.

Figure 11 is a perspective view showing a stacked appearance of another embodiment of the present invention.

Figure 12 is a side cross-sectional view of the prior art.

Figure 13 is a side cross-sectional view of another conventional use.

In order to achieve the above objects and effects, the technical means and the configuration of the present invention will be described in detail with reference to the preferred embodiments of the present invention.

Please refer to the first, second, third, fourth, fifth, sixth, seventh, and eighth diagrams. It can be clearly seen from the figure that the ceramic capacitor includes dielectric ceramic body 1, two electrode layers 2, and two ceramic wall layers. The second conductive layer 4, the two pins 5 and the insulating outer layer 6, the dielectric ceramic body 1 may be a rectangular body or a circular plate type geometric block, and the upper surface and the lower surface of the dielectric ceramic body 1 are respectively provided with an electrode layer. 2, and the outer sidewall of the two-electrode layer 2 corresponds to the outer sidewall of the dielectric ceramic body 1, and the surface of at least one of the electrode layers 2 is further provided with an annular ceramic wall layer 3 covering the local electrode layer 2, and the center of the ceramic wall layer 3 is exposed. The outer side wall of the ceramic layer 2 is flush with the outer side wall of the dielectric ceramic body 1 and the electrode layer 2, and the conductive layer 4 covering the outer surface of the electrode layer 2 is disposed in the hollow groove 30, The conductive layer 4 does not extend beyond the surface of the ceramic wall layer 3 away from the dielectric ceramic body 1, and then The opposite side of the ceramic wall layer 3 is respectively provided with a pin 5, and one end of the pin 5 is provided with an abutting portion 51 extending across the ceramic wall layer 3 to the outside, and the other end of the pin 5 extends to the upper surface of the conductive layer 4 and is provided with solder. 52, further, the dielectric ceramic body 1, the electrode layer 2, the ceramic wall layer 3, the hollow groove 30, the conductive layer 4 and the pin 5 are covered with a sealed insulating outer layer 6, and the abutting portion 51 of the two pins 5 is exposed. Outside the insulating outer layer 6.

Please refer to the first, second, third, fourth, fifth, sixth, seventh, eighth, and ninth diagrams. The process steps of the above ceramic capacitors are as follows: (700) fabricating a dielectric ceramic body 1 using a dielectric The first dielectric ceramic material having a coefficient (k) greater than 20 and less than 20,000 is made into a dielectric ceramic body 1 having a predetermined thickness, and the first dielectric ceramic material may be a dielectric material mainly composed of barium titanate.

(701) printing the electrode layer 2, printing the electrode layer 2 of the conductive material matching the expansion coefficient of the barium titanate on the upper surface and the lower surface of the dielectric ceramic body 1, the electrode layer 2 and the outside of the dielectric ceramic body 1 There is no gap between the walls.

(702) Making a ceramic wall layer 3 raw embryos, using a second dielectric ceramic material to form a ceramic wall layer 3 raw embryos, and the second dielectric ceramic material may be a dielectric material mainly composed of barium titanate.

(703) stacking, stacking the ceramic wall layer 3 on the surface of the at least one electrode layer 2, and the ceramic wall layer 3 has a hollow groove 30 exposing the electrode layer 2 in the center of the green embryo, and is located in the dielectric ceramic body 1 and the ceramic The outer side wall of the electrode layer 2 between the raw layers of the wall layer 3 is exposed.

(704) Degreasing, heating to a temperature at which the polymer conjugate is volatilized (250 ° C - 600 ° C), and maintaining the temperature for a predetermined time (about 2-10 hours) will be dielectric ceramics The polymer in the raw body of the porcelain body 1 and the ceramic wall layer 3 vaporized and evaporated.

(705) Sintering, heating up to the ceramic phase change temperature point (1200 ° C - 1400 ° C), dielectric ceramic body 1 raw embryo and ceramic wall layer 3 green embryo firing ceramic body, and ceramic wall layer 3 width W and dielectric The ratio of the thickness T of the ceramic body 1 is greater than or equal to 1.

(706) Secondary metallization, a solder resistive conductive layer 4 is formed on the surface of the electrode layer 2 exposed in the hollow trench 30 of the ceramic wall layer 3.

(707) The leg is soldered to one end of the two pins 5 to the conductive layer 4 exposed in the hollow groove 30, and the pin 5 is passed over the ceramic wall layer 3 such that the one end abutting portion 51 is located outside.

(708) coating the insulating outer layer 6, coating the resin on the dielectric ceramic body 1, the electrode layer 2, the ceramic wall layer 3, the hollow groove 30, the conductive layer 4, and the surface of the pin 5 to form an insulating outer layer 6, and two pins The abutting portion 51 of the 5 is exposed to the outside of the insulating outer layer 6.

In the above process steps, the dielectric ceramic body 1 is prepared by using the first dielectric ceramic material having a dielectric constant (k) of more than 20 and less than 20,000, and the finished product can have sufficient capacitance value and the electrode layer. 2 is made by using a conductive material that is matched with the thermal expansion coefficient of barium titanate. After the sintering process in the subsequent operation, the thermal expansion coefficient of the electrode layer 2 matches the barium titanate (dielectric ceramic body 1 and ceramic wall layer 3). In order to improve the production yield due to heat expansion and contraction, the dielectric ceramic body 1 raw embryo and ceramic wall layer 3 embryos can be produced by dry process or wet lamination. The dry process is made by slurrying the ceramic material into a slurry shape by using a coating device, and laying it on the PET film to form a strip shape, and the wet lamination method is used to prepare the ceramic material into a slurry form directly by using a lamination method. product.

The first dielectric ceramic material and ceramic wall of the above dielectric ceramic body 1 In the second dielectric ceramic material of the layer 3 raw embryo, since a polymer conjugate such as a solvent or a binder is required to be shaped, after the stacking, the degreasing operation in the step (704) is performed, in the atmosphere or nitrogen. In the environment, first heat up to 250 ° C -600 ° C, and maintain the temperature for about 2-10 hours, its temperature and temperature maintenance time depends on the dielectric ceramic body 1 raw embryo thickness, ceramic wall layer 3 raw embryo thickness, first dielectric The formulation of the ceramic material and the formulation of the second dielectric ceramic material are changed, so that the polymer conjugate of the dielectric ceramic body 1 and the ceramic wall layer 3 is vaporized and evaporated, and then the sintering operation of the step (705) is performed. In order to raise the temperature to 1200 ° C - 1400 ° C, the dielectric ceramic body 1 and the ceramic wall layer 3 are fired into a ceramic body to form a dielectric ceramic body 1 and a ceramic wall layer 3.

After sintering, the secondary metallization operation of step (706) is performed, and a solder resistive conductive layer 4 is formed on the surface of the electrode layer 2 exposed in the hollow trench 30 of the ceramic wall layer 3, and the metallization operation method of the conductive layer 4 is performed. It can be deposited or printed, and the deposition method can be chemical deposition or physical deposition. Electroless deposition is electroless plating (such as electroless nickel plating, electroless tin plating or electroless copper plating) or electrolytic plating (such as electrolytic nickel plating, Electrolytic tin plating or electrolytic copper plating), physical deposition method is sputtering or ion plating (for example, Ni (nickel), Ni-Cr (nickel chromium), Ti (titanium), Ti-W (titanium tungsten) or Cu (copper) ) such as solder resist metal deposited on the surface, and the printing coverage is to apply solder resist material (such as Ag (silver), Ag-Pd (silver palladium), Ag-Pt (silver platinum), Cu (copper) or Ni (nickel) The metal or alloy is adjusted into a paste to directly cover the surface of the electrode layer 2 exposed in the hollow groove 30 of the ceramic wall layer 3.

Then, the second pin 5 is soldered to the conductive layer 4 exposed in the hollow groove 30, and the resin is applied to the dielectric ceramic body 1, the electrode layer 2, the ceramic wall layer 3, the hollow groove 30, The surface of the conductive layer 4 and the pin 5 is formed with an insulating outer layer 6. The butt portion 51 of the pin 5 that is located outside the ceramic wall layer 3 is not covered by the insulating outer layer 6 and can be electrically connected to the second pin 5 during use. Preset on the board.

Referring to the first, second, third, fourth, fifth, sixth, seventh, eighth, tenth, and eleventh diagrams, the above-described ceramic capacitor manufacturing process steps are for manufacturing a single ceramic capacitor, but another embodiment is simultaneous fabrication. The plurality of ceramic capacitors are manufactured by the steps of: (800) fabricating a dielectric ceramic body 1 and forming a predetermined thickness using a first dielectric ceramic material having a dielectric constant (k) of greater than 20 and less than 20,000. The electric ceramic body 1 is a raw material, and the first dielectric ceramic material may be a dielectric material mainly composed of barium titanate.

(801) printing the electrode layer 2, printing a plurality of electrode layers 2 of a conductive material matching the expansion coefficient of barium titanate on the upper surface and the lower surface of the dielectric ceramic body 1, the electrode layer 2 and the dielectric ceramic body 1 There is no space between the outer sidewalls of the raw embryo.

(802) fabricating a ceramic wall layer 3 raw embryo, using a second dielectric ceramic material to form a ceramic wall layer 3 raw embryo, the second dielectric ceramic material may be a barium titanate-based dielectric material, and the ceramic wall layer 3 The green embryo has a plurality of hollow grooves 30 corresponding to the electrode layers 2 in an array.

(803) stacking, covering the surface of the at least one electrode layer 2 with the ceramic wall layer 3, and exposing the electrode layer 2 in the hollow space 30 of the ceramic wall layer 3, in the dielectric ceramic body 1 and the ceramic wall layer 3 The outer side wall of the electrode layer 2 between the raw embryos is exposed.

(804) cutting, using a mechanical processing method, the dielectric ceramic body 1 raw embryo and the ceramic wall layer 3 raw embryos are cut into a plurality of predetermined shapes according to the electrode layers 2, and the predetermined shape may be square or circular. Fixed geometry, that is, a plurality of semi-finished products are produced.

(805) Degreasing, heating to the temperature at which the polymer conjugate is volatilized (250 ° C - 600 ° C), and maintaining the temperature for a predetermined time (about 2-10 hours) to form a plurality of semi-finished dielectric ceramic bodies 1 embryo and ceramic fence The polymer in the layer 3 embryo is vaporized and evaporated.

(806) sintering, heating up to the ceramic phase change temperature point (1200 ° C - 1400 ° C), to a plurality of semi-finished dielectric ceramic body 1 raw embryo and ceramic wall layer 3 raw embryos fired into the ceramic body, and each semi-finished ceramic The ratio of the width W of the wall layer 3 to the thickness T of the dielectric ceramic body 1 is greater than or equal to one.

(807) Secondary metallization, each semi-finished product is formed with a solder-resistant conductive layer 4 on the surface of the electrode layer 2 exposed in the hollow groove 30 of the ceramic wall layer 3.

(808) The pin is formed by soldering one end of the two pins 5 to the conductive layer 4 exposed in each of the semi-finished hollow slots 30, and the pins 5 are passed over the ceramic wall layer 3 such that the one end abutting portion 51 is located outside.

(809) coating the insulating outer layer 6, and coating the resin on the surface of the dielectric ceramic body 1, the electrode layer 2, the ceramic wall layer 3, the hollow groove 30, the conductive layer 4, and the pin 5 of each semi-finished product to form an insulating outer layer 6, and The abutting portion 51 of the two pins 5 is exposed outside the insulating outer layer 6.

In the process step of manufacturing the other embodiment, a plurality of electrode layers 2 are simultaneously printed on the upper surface and the lower surface of the green ceramic body 1 in an array, and then formed on the green ceramic layer 3 The electrode layer 2 is in the form of an array of a plurality of hollow slots 30, so that a single ceramic wall layer 3 raw embryo stack can be overlaid on the electrode layer 2 and the dielectric ceramic body 1 in a single operation, and then the cutting operation can be performed to generate a plurality of The semi-finished product can be cut into a square shape by using a cutter to cut the dielectric ceramic body 1, the plurality of electrode layers 2 and the ceramic wall layer 3, and can also be used. The die is stamped into a round shape or other fixed geometry (such as triangle or diamond). Since a single ceramic capacitor semi-finished product can be produced in a single operation, the operation procedure can be saved and the operation time can be reduced, thereby achieving mass production and reduction. The purpose of cost.

Since the capacitance calculation formula is C=ε*A/d, C is the capacitance, the unit is Farah (F), ε is the dielectric coefficient, A is the area, the unit is square meters (m ² ), and d is the distance, the unit In the meter (m), the distance d is the thickness of the dielectric ceramic body 1 between the two electrode layers 2 and the two conductive layers 4, so that the dielectric ceramic body 1 is thinned to increase the capacitance of the product. After the thickness of the dielectric ceramic body 1 becomes smaller, the distance between the two conductive layers 4 becomes shorter, which is liable to cause electrical arcing in the outside air under high pressure conditions, and is covered by the ceramic wall layer 3 The electrode layer 2 is exposed, and only the conductive layer 4 is exposed in the hollow groove 30 in the center of the ceramic wall layer 3, and the dielectric ceramic body 1, the electrode layer 2 and the ceramic wall layer 3 can be co-fired at a high temperature by ceramics. The characteristic is that the ceramic wall layer 3 is tightly bonded to the surface of the electrode layer 2, and the insulating outer layer 6 is coated on the surface of the ceramic wall layer 3, so as to avoid defects (such as unevenness or depression) caused by the surface of the electrode layer 2, so that the insulating outer layer 6 Avoiding electrical generation when coating is incomplete, and bubbles and tiny holes are generated. Arc of the situation, so the product is not easily damaged.

Furthermore, when the surface of the electrode layer 2 is sintered or uneven, a strong electric field is easily generated, and the surface electric field is uneven, but after the electrode layer 2 is sintered, it is exposed in the hollow groove 30 of the ceramic wall layer 3. The surface of the electrode layer 2 is formed with a solder-resistant conductive layer 4, so that the surface does not cause bumps or unevenness due to sintering, so that the electric field can be made uniform to reduce the occurrence of electrical arcing in the outside air, thereby improving product life. And the purpose of using security.

In addition, since the dielectric constant (k) is greater than 20 and less than 20,000 The first dielectric ceramic material is made into a dielectric ceramic body 1 with a predetermined thickness, so that the dielectric ceramic body 1 of the product can have a higher capacitance value, and further, the second dielectric ceramic material is used to make the ceramic wall. Layer 3 raw embryos, the ceramic wall layer 3 located on the outer layer has greater strength and will also make the product less likely to collide and damage.

Therefore, the present invention is mainly directed to a ceramic capacitor structure, and the electrode layer can be printed on the upper and lower surfaces of the dielectric ceramic body preform made of the first dielectric ceramic material, and the second dielectric ceramic material is used to form the ceramic wall layer. The embryo stack covers the surface of at least one electrode layer, and then degreased and sintered sequentially to reduce the thickness of the dielectric ceramic body and to closely bond the surface of the electrode layer to the surface of the electrode layer to avoid defects, and has a reduced product. The advantages of the present invention and the contents of the drawings are as follows. The simple modification and the equivalent structural change are all included in the scope of the patent of the present invention and are combined with Chen Ming.

In summary, the above-mentioned ceramic capacitor structure of the present invention can achieve its efficacy and purpose during implementation and operation. Therefore, the present invention is an invention with excellent practicability, and is an application for conforming to the invention patent, and is proposed according to law. To apply, I hope that the trial committee will grant this case as soon as possible to protect the intensive research and development of the inventor. If there is any doubt in the bureau, please do not hesitate to give instructions to the inventor, and the inventor will try his best to cooperate with him.

1‧‧‧dielectric ceramic body

2‧‧‧electrode layer

3‧‧‧Ceramic wall layer

30‧‧‧ empty slots

4‧‧‧ Conductive layer

Claims (9)

A ceramic capacitor structure comprising a dielectric ceramic body, a two-electrode layer, two ceramic wall layers, two conductive layers, two pins and an insulating outer layer, using a first dielectric ceramic having a dielectric constant (k) greater than 20 and less than 20,000 The material is made of a dielectric ceramic body preform having a predetermined thickness, and the upper surface and the lower surface of the dielectric ceramic body are respectively provided with electrode layers, and the outer side walls of the two electrode layers correspond to the outer side walls of the dielectric ceramic body, the electrode layer and the dielectric ceramic There is no spacing between the outer sidewalls of the body embryo, and at least one of the upper and lower surfaces of the dielectric ceramic dielectric body is respectively provided with an annular ceramic wall layer covering the partial electrode layer, and the ceramic wall is made of the second dielectric ceramic material. The layered embryo has a hollowed-out groove in the center of the ceramic wall layer, and the outer side wall of the ceramic wall layer is flush with the outer wall of the dielectric ceramic, and is located between the dielectric ceramic body and the ceramic layer. The outer side wall is exposed, and the ratio of the width of the ceramic wall layer to the thickness of the dielectric ceramic body is greater than or equal to 1. The hollow space is provided with a conductive layer covering the outer surface of the electrode layer, and the conductive layer does not exceed the ceramic wall layer. The surface of the dielectric ceramic body is respectively provided with a pin on the opposite outer side of the two ceramic wall layer, and one end of the pin is provided with an abutting portion extending beyond the ceramic wall layer to the outside, and the other end of the pin extends to the upper surface of the conductive layer. Solder is provided, and then the dielectric ceramic body, the electrode layer, the ceramic wall layer, the hollow groove, the conductive layer and the outer portion of the pin are covered with a sealed insulating outer layer, and the abutting portions of the two pins are exposed outside the insulating outer layer. The ceramic capacitor structure according to claim 1, wherein the first dielectric ceramic material is a dielectric material mainly composed of barium titanate, and the dielectric ceramic body is a rectangular body or a circular plate type. The ceramic capacitor structure according to claim 1, wherein the second dielectric ceramic material is a dielectric material mainly composed of barium titanate. The ceramic capacitor structure of claim 1, wherein the conductive layer is nickel, A metal of tin, copper, silver or titanium or an alloy thereof. A ceramic capacitor structure comprising a dielectric ceramic body, a two-electrode layer, a two-ceramic wall layer and two conductive layers, and a predetermined thickness is formed by using a first dielectric ceramic material having a dielectric constant (k) of more than 20 and less than 20,000 The electric ceramic body is formed with an electrode layer on the upper surface and the lower surface of the dielectric ceramic body, and the outer side wall of the two electrode layer corresponds to the outer side wall of the dielectric ceramic body, and between the electrode layer and the outer side wall of the dielectric ceramic body. Without spacing, the upper surface and the lower surface of the dielectric ceramic body are respectively provided with an annular ceramic wall layer covering the partial electrode layer, and the second dielectric ceramic material is used to form the ceramic wall layer green embryo, and the ceramic wall layer has an exposed electrode in the center. The outer side wall of the layer is flush with the outer side wall of the dielectric ceramic layer, and the outer side wall of the electrode layer between the dielectric ceramic body embryo and the ceramic wall layer is exposed, and the ceramic wall layer is The ratio of the width to the thickness of the dielectric ceramic body is greater than or equal to 1. The hollow space is provided with a conductive layer covering the outer surface of the electrode layer, and the conductive layer does not extend beyond the surface of the ceramic wall layer away from the dielectric ceramic body. The ceramic capacitor structure according to claim 5, wherein the first dielectric ceramic material is a dielectric material mainly composed of barium titanate, and the dielectric ceramic body is a rectangular body or a circular plate type. The ceramic capacitor structure according to claim 5, wherein the second dielectric ceramic material is a dielectric material mainly composed of barium titanate. The ceramic capacitor structure of claim 5, wherein the conductive layer is a metal of nickel, tin, copper, silver or titanium or an alloy thereof. The ceramic capacitor structure of claim 5, wherein the opposite sides of the two ceramic wall layers are respectively provided with pins, and one end of the pins is provided with an abutting portion extending across the ceramic wall layer to the outside, and the other end of the pin is Extending to the upper surface of the conductive layer and providing solder, and then dielectric ceramic The body, the electrode layer, the ceramic wall layer, the hollow groove, the conductive layer and the outer portion of the pin are covered with a sealed insulating outer layer, and the abutting portions of the two pins are exposed outside the insulating outer layer.