TWI586632B - 金屬－陶瓷基板，及製造金屬－陶瓷基板之方法 - Google Patents

金屬－陶瓷基板，及製造金屬－陶瓷基板之方法 Download PDF

Info

Publication number
TWI586632B
TWI586632B TW102134547A TW102134547A TWI586632B TW I586632 B TWI586632 B TW I586632B TW 102134547 A TW102134547 A TW 102134547A TW 102134547 A TW102134547 A TW 102134547A TW I586632 B TWI586632 B TW I586632B
Authority
TW
Taiwan
Prior art keywords
weight
range
ceramic
metal
ceramic layer
Prior art date
Application number
TW102134547A
Other languages
English (en)
Other versions
TW201422562A (zh
Inventor
卡斯坦 施密特
安卓斯 梅爾
亞歷山大 雷蓋斯
馬汀納 史契米勒
Original Assignee
庫拉米克電子有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=49488447&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TWI586632(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 庫拉米克電子有限公司 filed Critical 庫拉米克電子有限公司
Publication of TW201422562A publication Critical patent/TW201422562A/zh
Application granted granted Critical
Publication of TWI586632B publication Critical patent/TWI586632B/zh

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/10—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on aluminium oxide
    • C04B35/111—Fine ceramics
    • C04B35/117—Composites
    • C04B35/119—Composites with zirconium oxide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/028—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles by means of an interlayer consisting of an organic adhesive, e.g. phenol resin or pitch
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/52—Constituents or additives characterised by their shapes
    • C04B2235/5208—Fibers
    • C04B2235/5216—Inorganic
    • C04B2235/524—Non-oxidic, e.g. borides, carbides, silicides or nitrides
    • C04B2235/5248—Carbon, e.g. graphite
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9607—Thermal properties, e.g. thermal expansion coefficient
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/402—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/62—Forming laminates or joined articles comprising holes, channels or other types of openings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/706—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the metallic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/86—Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
    • H05K2201/0137—Materials
    • H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/032—Materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/06—Thermal details
    • H05K2201/062—Means for thermal insulation, e.g. for protection of parts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/266—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension of base or substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)

Description

金屬-陶瓷基板，及製造金屬-陶瓷基板之方法
本發明關於如申請專利範圍第1項之前言中所主張的金屬-陶瓷基板，及如申請專利範圍第10項之前言中所主張之製造金屬-陶瓷基板的方法。
大量各式類型之金屬-陶瓷基板以從陶瓷所形成之絕緣層及接合至該從陶瓷所形成之絕緣層的表面之一的至少一個結構化金屬化所組成的電路板形式存在，用於形成導體、接觸、接觸區或固定區。
為了減少施加至陶瓷層之金屬化層的厚度，需要提高該陶瓷層的熱傳導性。為此，例如從DE 10 2004 012 231 B4已知經金屬化之陶瓷基板，該專利中，為了獲得高機械強度及高熱傳導性，該陶瓷層係從具有某一比例之二氧化鋯的陶瓷材料製造。除了氧化鋁(Al2O3)之外，該陶瓷材料含有二氧化鋯(ZrO2)以及氧化釔(Y2O3)及/或氧化鈣(CaO)，其中Al2O3,ZrO2 以及Y2O3及/或CaO係以下列相對於該陶瓷層之總重量的比例包含於該層中：Al2O3介於91重量%與97.96重量%之間；ZrO2介於2重量%與9重量%之間；及Y2O3及/或CaO介於0.04重量%與1重量%之間。此類型之陶瓷層在室溫下的熱傳導性係介於20與23W/mK之間。然而，需要進一步提高熱傳導性，同時維持該陶瓷層或該經金屬化陶瓷基板的彎曲強度或只少許變差。
另一實例為所謂「DCB法」(直接銅接合)，其使用金屬或銅薄片或表面上具有一層或塗層(「熔融層」，其係由該金屬與反應性氣體(較佳為氧)之化學化合物所形成)的金屬或銅箔，用於將金屬層或薄片(較佳為銅薄片或箔)接合在一起及/或與陶瓷或陶瓷層接合。在該描述之方法中，例如在US-PS 37 44 120或在DE-PS 23 19 854中，該層或塗層(「熔融層」)形成熔點低於該金屬(例如銅)之熔點的共熔物，因此藉由將該金屬或銅箔施加至該陶瓷並加熱全部的層，可藉由基本上只熔融在該熔融層或氧化層之區中的金屬或銅而接合在一起。此種DCB法則例如具有下列程序步驟：˙氧化銅箔以使得產生均勻氧化銅層；˙將該具有均勻氧化銅層的銅箔施加至該陶瓷層；˙將該組合件加熱至介於約1025℃與1083℃之間的加工溫度，例如加熱至約1071℃； ˙冷卻至室溫。
此外，文件DE 22 13 115及EP-A-153 168揭示所謂活性軟焊法，其用於接合形成金屬化之金屬層或金屬箔(尤其是銅層或銅箔)與陶瓷材料或陶瓷層。該方法中，其例如亦可尤其用於製造金屬-陶瓷基板，在介於大約800至1000℃之間的溫度下使用硬焊料在金屬箔(例如銅箔)與陶瓷基板(例如氮化鋁陶瓷)之間產生接合，其中該硬焊料除了諸如銅、銀及/或金之主要組分外，亦含有活性金屬。該活性金屬(其為例如選自Hf、Ti、Zr、Nb及Ce之群組中的至少一種元素)藉由化學反應在該硬焊料接合與該陶瓷之間產生接合，同時該硬焊料與該金屬之間的接合為金屬硬焊料接合。
根據前文所討論之先前技術，本發明目的係提出一種金屬-陶瓷基板以及其製造之相關方法，其包含具有經改良熱傳導性之具有二氧化鋯的陶瓷材料。該目標係藉由根據申請專利範圍1或10之金屬-陶瓷基板或其製造方法而達成。
本發明之金屬-陶瓷基板的基本方面係氧化鋁、二氧化鋯以及氧化釔係相對於該陶瓷層之總重量以下列比例包含在該陶瓷層中：二氧化鋯在2重量%至15重量%之範圍中；氧化釔在0.01重量%至1重量%之範圍中；且氧化鋁在84重量%至97重量%之範圍中，其中所使用之氧 化鋁的平均晶粒大小在2至8微米之範圍中，且該氧化鋁晶粒之晶界長度對所有晶界的總長度之比大於0.6。藉由本發明之陶瓷層具有在2重量%至15重量%的範圍中之二氧化鋯以及使用平均晶粒大小在2至8微米之範圍中的氧化鋁，熱傳導性可提高至多達10%。特別有利的是，該陶瓷層具有超過25W/mK之熱傳導性。以此方式，可根據應用而使金屬化層的厚度縮減至0.05mm。
本發明之有利變化中，二氧化鋯之比例係在2重量%至10重量%之範圍中，氧化釔之比例係在0.01重量%至1重量%之範圍中，及氧化鋁之比例係在89重量%至97重量%之範圍中。藉由使二氧化鋯比例降至低於10重量%，較佳係同時提高燒結溫度，可獲得熱傳導性之進一步顯著改善，其中太高之燒結溫度造成彎曲強度降低。
本發明另一具體實例中，該陶瓷層具有超過500MPa之彎曲強度。
本發明之有利變化中，結晶相中之二氧化鋯主要具有四方晶體結構，其中該二氧化鋯之總晶體結構中的四方晶體結構之分率超過80%。結晶相中之四方晶體結構增加及相關聯之從該陶瓷排除玻化相亦造成熱傳導性改善。
本發明另一具體實例中，本發明之金屬-陶瓷基板係例如形成如下，使該陶瓷層具有在0.1mm至1.0mm之範圍中，較佳在0.2mm至0.5mm之範圍中的層厚度；及/或 該金屬化具有在0.05mm至1.2mm之範圍中，較佳在0.1mm至0.5mm之範圍中的層厚度；及/或該金屬化係經結構以使得可形成接觸或接合表面；及/或該金屬化係藉由銅或銅合金及/或鋁或鋁合金之箔或層所形成；其中所引用之特徵可獨立使用或以任何組合使用。
本發明亦關於一種製造包含至少一個具有第一及第二表面之陶瓷層的金屬-陶瓷基板之方法，其中該等表面中之至少一者係與至少一個金屬化接合，其中陶瓷層係從包含氧化鋁、二氧化鋯及氧化釔之陶瓷材料製造。根據本發明，為了製造該陶瓷層，使用相對於該陶瓷層之總重量為以下比例之氧化鋁、二氧化鋯及氧化釔：二氧化鋯在2重量%至15重量%之範圍中；氧化釔在0.01重量%至1重量%之範圍中；且氧化鋁在84重量%至97重量%之範圍中，其中所使用之氧化鋁的平均晶粒大小在2至8微米之範圍中，且該氧化鋁晶粒之晶界長度對所有晶界的總長度之比大於0.6。
本發明之方法係在例如以下方面進一步發展：形成至少一個呈由銅或銅合金所形成之箔或層形式的金屬化，該金屬化藉由直接銅接合方法或活性軟焊方法，或藉由使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑，尤其是碳奈米纖維)的黏著接合而接合至該陶瓷層； 及/或形成至少一個呈由鋁或鋁合金所形成之箔或層形式的金屬化，該金屬化藉由直接鋁接合(DAB)方法，或藉由使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑，尤其是碳奈米纖維)的黏著接合而與該陶瓷層接合在一起，其中所引用之特徵可獨立使用或組合使用。
再次，就該陶瓷層之製造而言，有利的是使用結晶相主要具有四方晶體結構之二氧化鋯，其中該四方晶體結構對該二氧化鋯之總晶體結構的比例超過80%。
本發明內文中所使用的「大約」、「基本上」或「約」等用辭意指與個別精確值的平均偏差為±10%，較佳為±5%，及/或偏差呈與該函數無關之差異的形式。
從以下範例具體實例之描述及圖式可明暸本發明之其他具體實例、優點及應用。為此，不論是在申請專利範圍之總論或其附項項中，獨立或以任何組合描述或圖示的所有特徵獨立地構成本發明主題。此外，該等申請專利範圍之內容應被視為形成本說明的構成部分。
1‧‧‧金屬-陶瓷基板
2‧‧‧陶瓷層
2a‧‧‧第一表面
2b‧‧‧第二表面
3‧‧‧第一金屬化
4‧‧‧第二金屬化
茲將藉助於圖式及實例描述本發明，其中圖1顯示通過具有一個金屬化之本發明金屬-陶瓷基板的簡化斷面圖；及圖2顯示通過具有兩個金屬化之本發明金屬-陶瓷基 板的簡化斷面圖；及圖3顯示圖2之具有兩個金屬化的金屬-陶瓷基板之其他具體實例的簡化斷面圖；及圖4顯示慣用陶瓷層與本發明金屬-陶瓷基板中具有各種氧化鋯之陶瓷層的熱傳導性之溫度曲線圖。
圖1以簡化形式顯示通過包含至少一個具有兩個相反表面(換言之，第一及第二表面2a，2b)的陶瓷層2之本發明金屬-陶瓷基板的斷面。
圖1所示之本發明的金屬-陶瓷基板1係設置有至少一個金屬化3。在本發明範例具體實例中，該第一表面2a係設置有第一金屬化3，而與該第一表面相反的第二表面2b不具有任何金屬化。
圖2及圖3顯示本發明金屬-陶瓷基板1之兩個其他具體實例，其中第一表面2a係設置有第一金屬化3，而與該第一表面2a相反的第二表面2b係設置有第二金屬化4。
該第一及/或第二金屬化3，4較佳係結構化之形式，即，產生複數個用於連接電子組件之接觸區或接觸表面。圖1及2以實例方式個別結構化之第一金屬化3，而圖3顯示結構化之第一及第二金屬化3，4。
此類型之金屬-陶瓷基板以已知方式作為用於電或電子開關或開關模組(特別是用於電源切換)的電路板。為 此，金屬化3，4之結構化係使用一般技術(諸如遮罩及蝕刻技術)產生。
根據本發明，用以製造金屬-陶瓷基板1之陶瓷層2的陶瓷材料包含氧化鋁(Al2O3)、二氧化鋯(ZrO2)以及氧化釔(Y2O3)。該陶瓷層2以下列相對於該陶瓷層2之總重量的比例含有氧化鋁、二氧化鋯及氧化釔：˙二氧化鋯在2重量%至15重量%之範圍中；˙氧化釔在0.01重量%至1重量%之範圍中；且˙氧化鋁在84重量%至97重量%之範圍中。
該實例中所使用之氧化鋁的平均晶粒大小在2至8微米之範圍中。使用具有以下比例之組成尤其可獲得更佳熱傳導性：˙二氧化鋯在2重量%至10重量%之範圍中；˙氧化釔在0.01重量%至1重量%之範圍中；且˙氧化鋁在89重量%至97重量%之範圍中。
該陶瓷層2具有晶體結構，即其係由複數個彼此材料之微晶體或晶粒組成。具有不同定向但為相同晶體結構之微晶體或晶粒係由所謂晶界而彼此分開。若將氧化鋁晶粒之晶界長度對所有成分之晶界的總長度之比選擇為大於0.6，則發現熱傳導性相當大幅改善。此外，該陶瓷層2之強度實質上提高。該陶瓷層2之熱傳導性較佳係大於25W/mK，即比具有二氧化鋯內容物的已知陶瓷層2提高8%至10%。
較佳地，結晶相中所使用之二氧化鋯主要具有四方晶 體結構，其中該四方晶體結構對該二氧化鋯之總晶體結構的比例超過80%。
此外，該陶瓷層2具有在0.1mm至1.0mm之範圍中，較佳在0.2mm至0.5mm之範圍中的層厚度，然而該陶瓷層2之彎曲強度係經選擇為例如超過500MPa。
該等金屬化3，4係例如藉由銅或銅合金及/或鋁或鋁合金之箔或層所形成，即，可想像銅或銅合金及鋁或鋁合金的組合。為此，該等金屬化3，4之層厚度在0.05mm至1.2mm之範圍中，較佳在0.1mm至0.5mm之範圍中。
各種方法適用於將該陶瓷層2平坦接合至該第一或第二金屬化3，4；其係取決於該陶瓷層2及該等金屬化3，4所使用之材料。
如此，呈銅或銅合金之箔或層形式的金屬化3，4係藉由例如使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑，尤其是碳奈米纖維)的接合而與該陶瓷層2接合。或者，該陶瓷層之平坦接合可使用DCB法或借助活性軟焊法進行。
從鋁或鋁合金所產生之金屬化3，4係使用例如直接鋁接合(DAB)或藉由使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑，尤其是碳奈米纖維)的接合而與該陶瓷層2接合。
圖4將先前技術陶瓷層之實例及本發明金屬-陶瓷基板中所使用的陶瓷層2顯示成不同氧化鋯含量(換言之， 具有5%比例之ZrO2的陶瓷層、具有7%含量之ZrO2的陶瓷層及具有9%含量之ZrO2的陶瓷層)之熱傳導性(W/mK表示)與溫度(以℃表示)的圖。此顯示在大約24℃之室溫下的熱傳導性大於25W/mK，因此提供熱傳導性提高約8至10%。
本發明於本文中已使用範例具體實例加以說明。應暸解在不違背在本發明之發明概念的情況下，可能有許多修改及變化。
1‧‧‧金屬-陶瓷基板
2‧‧‧陶瓷層
2a‧‧‧第一表面
2b‧‧‧第二表面
3‧‧‧第一金屬化

Claims (13)

  1. 一種金屬-陶瓷基板，包含至少一個具有第一及第二表面(2a，2b)之陶瓷層(2)，該陶瓷層(2)的該等表面(2a，2b)中之至少一者上有提供金屬化(3，4)，其中形成該陶瓷層(2)之陶瓷材料含有氧化鋁、二氧化鋯及氧化釔，其特徵在於氧化鋁、二氧化鋯以及氧化釔係相對於該陶瓷層(2)之總重量以下列比例包含在該陶瓷層(2)中：˙二氧化鋯在2重量%至15重量%之範圍中；˙氧化釔在0.01重量%至1重量%之範圍中；且˙氧化鋁在84重量%至97重量%之範圍中，其中所使用之氧化鋁的平均晶粒大小在2至8微米之範圍中，且該氧化鋁晶粒之晶界長度對所有晶界的總長度之比大於0.6。
  2. 如申請專利範圍第1項之金屬-陶瓷基板，其中在該陶瓷層(2)中之氧化鋁、二氧化鋯及氧化釔相對於該陶瓷層(2)之總重量之比例如下：˙二氧化鋯在2重量%至10重量%之範圍中；˙氧化釔在0.01重量%至1重量%之範圍中；且˙氧化鋁在89重量%至97重量%之範圍中。
  3. 如申請專利範圍第1項之金屬-陶瓷基板，其中該陶瓷層(2)具有超過25W/mK之熱傳導性。
  4. 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板，其中該陶瓷層(2)具有超過500MPa之彎曲強 度。
  5. 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板，其中該陶瓷層(2)具有在0.1mm至1.0mm範圍中，較佳在0.2mm至0.5mm範圍中之層厚度。
  6. 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板，其中結晶相中之二氧化鋯主要具有四方晶體結構，其中該二氧化鋯之總晶體結構中的四方晶體結構之分率超過80%。
  7. 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板，其中該金屬化(3)具有在0.05mm至1.2mm範圍中，較佳在0.1mm至0.5mm範圍中之層厚度。
  8. 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板，其中該金屬化(3)係經結構化以使得可形成接觸或接合表面。
  9. 如申請專利範圍第1至3項中任一項之金屬-陶瓷基板，其中該金屬化(3，4)係藉由銅或銅合金及/或鋁或鋁合金之箔或層所形成。
  10. 一種製造包含至少一個具有第一及第二表面(2a，2b)之陶瓷層(2)的金屬-陶瓷基板(2)之方法，其中該等表面(2a，2b)中之至少一者係與至少一個金屬化(4)平坦接合，其中該陶瓷層(2)係從包含氧化鋁、二氧化鋯及氧化釔之陶瓷材料製造，該方法特徵在於，為了製造該陶瓷層(2)，使用相對於該陶瓷層(2)之總重量為以下比例之氧化鋁、二氧化鋯及氧化釔： ˙二氧化鋯在2重量%至15重量%之範圍中；˙氧化釔在0.01重量%至1重量%之範圍中；且˙氧化鋁在84重量%至97重量%之範圍中，其中所使用之氧化鋁的平均晶粒大小在2至8微米之範圍中，且該氧化鋁晶粒之晶界長度對所有晶界的總長度之比係經選擇以使之大於0.6。
  11. 如申請專利範圍第10項之方法，其中形成至少一個呈由銅或銅合金所形成之箔或層形式的金屬化(3，4)，該金屬化(3，4)藉由直接銅接合方法或活性軟焊方法，或藉由使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑，尤其是碳奈米纖維)的黏著接合而接合至該陶瓷層(2)。
  12. 如申請專利範圍第10項之方法，其中形成至少一個呈由鋁或鋁合金所形成之箔或層形式的金屬化(3，4)，該金屬化(3，4)藉由直接鋁接合(DAB)方法，或藉由使用塑膠黏著劑或適於用作黏著劑之聚合物(較佳係使用含有碳纖維之黏著劑，尤其是碳奈米纖維)的黏著接合而與該陶瓷層接合在一起。
  13. 如申請專利範圍第11或12項中任一項之方法，其中二氧化鋯係用於該陶瓷層(2)之製造，該二氧化鋯之結晶相主要具有四方晶體結構，其中該四方晶體結構相對於該二氧化鋯之總晶體結構的比例超過80%。
TW102134547A 2012-10-29 2013-09-25 金屬－陶瓷基板，及製造金屬－陶瓷基板之方法 TWI586632B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102012110322.4A DE102012110322B4 (de) 2012-10-29 2012-10-29 Metall-Keramik-Substrat sowie Verfahren zum Herstellen eines Metall-Keramik-Substrates

Publications (2)

Publication Number Publication Date
TW201422562A TW201422562A (zh) 2014-06-16
TWI586632B true TWI586632B (zh) 2017-06-11

Family

ID=49488447

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102134547A TWI586632B (zh) 2012-10-29 2013-09-25 金屬－陶瓷基板，及製造金屬－陶瓷基板之方法

Country Status (9)

Country Link
US (1) US9642247B2 (zh)
EP (1) EP2911994B1 (zh)
JP (1) JP2015534280A (zh)
KR (1) KR102034335B1 (zh)
CN (1) CN104755445B (zh)
DE (2) DE102012110322B4 (zh)
HU (1) HUE047369T2 (zh)
TW (1) TWI586632B (zh)
WO (1) WO2014067511A1 (zh)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014101926A1 (de) * 2014-02-17 2015-05-07 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul
DE102014114132B4 (de) 2014-09-29 2018-03-15 Rogers Germany Gmbh Metall-Keramik-Substrat und Verfahren zum Herstellen eines Metall-Keramik-Substrates
DE202016008287U1 (de) 2016-02-26 2017-06-21 Heraeus Deutschland GmbH & Co. KG Kupfer-Keramik-Verbund
DE202016008286U1 (de) 2016-02-26 2017-06-21 Heraeus Deutschland GmbH & Co. KG Kupfer-Keramik-Verbund
DE202016008307U1 (de) 2016-02-26 2017-07-10 Heraeus Deutschland GmbH & Co. KG Kupfer-Keramik-Verbund
DE102016203097B3 (de) * 2016-02-26 2017-05-18 Heraeus Deutschland GmbH & Co. KG Kupfer-Keramik-Verbund und Modul
DE102016203112B4 (de) 2016-02-26 2019-08-29 Heraeus Deutschland GmbH & Co. KG Kupfer-Keramik-Verbund
EP3210957B1 (de) 2016-02-26 2019-01-02 Heraeus Deutschland GmbH & Co. KG Kupfer-keramik-verbund
DE102016203058B3 (de) * 2016-02-26 2017-05-18 Heraeus Deutschland GmbH & Co. KG Kupfer-Keramik-Verbund und Modul
EP3210951B9 (de) 2016-02-26 2021-05-19 Heraeus Deutschland GmbH & Co. KG Kupfer-keramik-verbund
DE202016008371U1 (de) 2016-02-26 2017-09-11 Heraeus Deutschland GmbH & Co. KG Kupfer-Keramik-Verbund
DE102016203030A1 (de) 2016-02-26 2017-08-31 Heraeus Deutschland GmbH & Co. KG Kupfer-Keramik-Verbund
DE202016008370U1 (de) 2016-02-26 2017-09-11 Heraeus Deutschland GmbH & Co. KG Kupfer-Keramik-Verbund
JP6858786B2 (ja) 2016-02-26 2021-04-14 ヘレウス ドイチュラント ゲーエムベーハー ウント カンパニー カーゲー 銅−セラミックス複合材料
EP3210956B1 (de) 2016-02-26 2018-04-11 Heraeus Deutschland GmbH & Co. KG Kupfer-keramik-verbund
US10000423B1 (en) 2016-03-31 2018-06-19 Ixys, Llc Direct metal bonding on carbon-covered ceramic contact projections of a ceramic carrier
DE102017114893B4 (de) * 2017-07-04 2023-11-23 Rogers Germany Gmbh Lötmaterial zum Aktivlöten und Verfahren zum Aktivlöten
DE102017128316B4 (de) * 2017-11-29 2019-12-05 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats und Metall-Keramik-Substrat
DE102018101750A1 (de) * 2018-01-26 2019-08-01 Rogers Germany Gmbh Verbundkeramik für eine Leiterplatte und Verfahren zu deren Herstellung
JP7269084B2 (ja) * 2018-04-24 2023-05-08 キヤノン株式会社 セラミックス物品の製造方法およびセラミックス物品
EP3595002A1 (de) * 2018-07-12 2020-01-15 Heraeus Deutschland GmbH & Co KG Metall-keramik-substrat mit einer zur direkten kühlung geformten folie als substratunterseite
CN112805822A (zh) 2018-12-06 2021-05-14 日本碍子株式会社 半导体装置用基板
EP3854767A4 (en) 2018-12-06 2022-05-11 NGK Insulators, Ltd. SINTERED CERAMIC BODY AND SUBSTRATE FOR SEMICONDUCTOR DEVICES
CN112789256B (zh) * 2018-12-06 2022-11-08 日本碍子株式会社 陶瓷烧结体以及半导体装置用基板
CN110330317B (zh) * 2019-07-23 2020-09-22 南充三环电子有限公司 一种氧化锆复合氧化铝陶瓷烧结体、其制备方法及应用
DE102019126954A1 (de) * 2019-10-08 2021-04-08 Rogers Germany Gmbh Verfahren zur Herstellung eines Metall-Keramik-Substrats, Lötsystem und Metall-Keramik-Substrat, hergestellt mit einem solchen Verfahren
DE102019135146B4 (de) * 2019-12-19 2022-11-24 Rogers Germany Gmbh Metall-Keramik-Substrat
CN113929487B (zh) * 2020-06-29 2023-03-31 南京纳研企业管理合伙企业(有限合伙) 压电陶瓷复合材料及其制备方法和应用
CN112441821B (zh) * 2020-11-06 2023-02-28 南充三环电子有限公司 一种陶瓷封装基座及其制备方法
EP4242192A1 (en) 2022-03-11 2023-09-13 CeramTec GmbH Ceramic substrate

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102395540A (zh) * 2009-04-03 2012-03-28 株式会社住友金属电设备 陶瓷烧结体及采用其的半导体装置用基板

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2213115C3 (de) 1972-03-17 1975-12-04 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum hochfesten Verbinden von Keramiken aus Karbiden, einschließlich des Diamanten, Boriden, Nitriden oder Suiziden mit Metall nach dem Trocken-Lötverfahren
US3766634A (en) 1972-04-20 1973-10-23 Gen Electric Method of direct bonding metals to non-metallic substrates
US3744120A (en) 1972-04-20 1973-07-10 Gen Electric Direct bonding of metals with a metal-gas eutectic
JPH0810710B2 (ja) 1984-02-24 1996-01-31 株式会社東芝 良熱伝導性基板の製造方法
DE4029066A1 (de) * 1990-09-13 1992-03-19 Friedrichsfeld Ag Keramischer formkoerper
JP2883787B2 (ja) * 1993-07-20 1999-04-19 富士電機株式会社 パワー半導体装置用基板
US5675181A (en) * 1995-01-19 1997-10-07 Fuji Electric Co., Ltd. Zirconia-added alumina substrate with direct bonding of copper
JP4465173B2 (ja) * 2003-09-10 2010-05-19 京セラ株式会社 複合セラミックスおよびその製法
DE102004012231B4 (de) * 2004-03-09 2006-03-23 Curamik Electronics Gmbh Metall-Keramik-Substrat
IL164054A (en) * 2004-09-13 2010-06-16 Cohen Michael Alumina ceramic products
JP4695002B2 (ja) * 2006-03-30 2011-06-08 京セラ株式会社 絶縁セラミックとそれを用いたセラミックヒータおよびヒータ一体型素子。
DE102009041574A1 (de) * 2008-10-29 2010-05-12 Electrovac Ag Verbundmaterial, Verfahren zum Herstellen eines Verbundmaterials sowie Kleber oder Bondmaterial
EP2513010B1 (de) * 2009-12-16 2017-08-30 CeramTec GmbH Keramischer verbundwerkstoff, bestehend aus den hauptbestandteilen aluminiumoxid und zirkonoxid und einer dispersoiden phase
JP2013032265A (ja) * 2011-07-01 2013-02-14 Maruwa Co Ltd 半導体装置用アルミナジルコニア焼結基板及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102395540A (zh) * 2009-04-03 2012-03-28 株式会社住友金属电设备 陶瓷烧结体及采用其的半导体装置用基板

Also Published As

Publication number Publication date
EP2911994B1 (de) 2020-01-01
KR102034335B1 (ko) 2019-10-18
US9642247B2 (en) 2017-05-02
DE102012110322B4 (de) 2014-09-11
US20150230334A1 (en) 2015-08-13
EP2911994A1 (de) 2015-09-02
TW201422562A (zh) 2014-06-16
CN104755445B (zh) 2017-11-03
HUE047369T2 (hu) 2020-04-28
DE202013012790U1 (de) 2019-08-23
WO2014067511A1 (de) 2014-05-08
JP2015534280A (ja) 2015-11-26
CN104755445A (zh) 2015-07-01
DE102012110322A1 (de) 2014-04-30
KR20150079836A (ko) 2015-07-08

Similar Documents

Publication Publication Date Title
TWI586632B (zh) 金屬－陶瓷基板，及製造金屬－陶瓷基板之方法
JP5641451B2 (ja) 金属セラミック基板
JP6168268B2 (ja) 金属−セラミック基板及びそのような基板を製造するための方法
US8435640B2 (en) Metal-ceramic substrate
JP6753869B2 (ja) 複合材料を製作するための方法
KR101476343B1 (ko) 금속화된 세라믹 베이스를 갖는 컴포넌트
JP2022501827A (ja) 電気部品用、特に電子部品用のキャリア基板およびキャリア基板の製造方法
US11021406B2 (en) Copper-ceramic composite
JP7461506B2 (ja) キャリア基板およびキャリア基板の製造方法
KR101411956B1 (ko) 이종접합 구조체 및 그 제조방법
JP2022087102A (ja) 金属半製品を製造する方法、金属－セラミック基板を製造する方法および金属－セラミック基板
US20210188718A1 (en) Copper-ceramic composite
KR20180111939A (ko) 구리-세라믹 복합체
KR20180111938A (ko) 구리-세라믹 복합체
US20230031736A1 (en) Solder material, method for producing a solder material of this type and use of a solder material of this type in order to connect a metal layer to a ceramic layer
JP2021513744A (ja) 金属セラミック基板および金属セラミック基板の製造方法
JP4468338B2 (ja) セラミックス回路基板の製造方法
JP7398565B2 (ja) 金属－セラミック基板を生産する方法及びそのような方法によって生産された金属－セラミック基板
JP7400109B2 (ja) 金属－セラミック基板を生産する方法及びそのような方法によって生産された金属－セラミック基板
US20220295641A1 (en) Method for producing a metal-ceramic substrate, and metal-ceramic substrate produced using such a method
JP5050070B2 (ja) セラミックス銅回路基板および半導体装置
CN113892216B (zh) 适配器元件、具有适配器元件的系统及用于制造适配器元件的方法
JP2013060350A (ja) 炭化ホウ素含有セラミックス−酸化物セラミックス接合体及び該接合体の製造方法
EP2811512B1 (en) Circuit board, and electronic device using same