TWI582850B - 氮氧化矽膜之形成方法及附有由其所製造之氮氧化矽膜之基板 - Google Patents

氮氧化矽膜之形成方法及附有由其所製造之氮氧化矽膜之基板 Download PDF

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Publication number
TWI582850B
TWI582850B TW100120802A TW100120802A TWI582850B TW I582850 B TWI582850 B TW I582850B TW 100120802 A TW100120802 A TW 100120802A TW 100120802 A TW100120802 A TW 100120802A TW I582850 B TWI582850 B TW I582850B
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TW
Taiwan
Prior art keywords
film
forming
substrate
oxynitride film
ultraviolet irradiation
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TW100120802A
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English (en)
Chinese (zh)
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TW201205673A (en
Inventor
尼那多 信德
長原達郎
高野祐輔
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默克專利有限公司
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Publication of TW201205673A publication Critical patent/TW201205673A/zh
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Publication of TWI582850B publication Critical patent/TWI582850B/zh

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Classifications

    • H10P14/6927—
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/065—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208—Oxides, e.g. ceramics
    • C23C18/1216—Metal oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/122—Inorganic polymers, e.g. silanes, polysilazanes, polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
    • C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
    • H10P14/6342—
    • H10P14/6538—
    • H10P14/6689—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Materials For Photolithography (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
TW100120802A 2010-06-17 2011-06-15 氮氧化矽膜之形成方法及附有由其所製造之氮氧化矽膜之基板 TWI582850B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010138102A JP2012004349A (ja) 2010-06-17 2010-06-17 シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板

Publications (2)

Publication Number Publication Date
TW201205673A TW201205673A (en) 2012-02-01
TWI582850B true TWI582850B (zh) 2017-05-11

Family

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Family Applications (1)

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TW100120802A TWI582850B (zh) 2010-06-17 2011-06-15 氮氧化矽膜之形成方法及附有由其所製造之氮氧化矽膜之基板

Country Status (5)

Country Link
US (1) US9029071B2 (enExample)
EP (1) EP2584593B8 (enExample)
JP (1) JP2012004349A (enExample)
TW (1) TWI582850B (enExample)
WO (1) WO2011158119A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2980394B1 (fr) * 2011-09-26 2013-10-18 Commissariat Energie Atomique Structure multicouche offrant une etancheite aux gaz amelioree
US20150209826A1 (en) * 2014-01-29 2015-07-30 University Of Washington Silicon oxynitride materials having particular surface energies and articles including the same, and methods for making and using them
JP2015149404A (ja) 2014-02-06 2015-08-20 富士フイルム株式会社 シリコンオキシナイトライド膜およびその製造方法、トランジスタ
KR102675982B1 (ko) * 2014-05-23 2024-06-17 코닝 인코포레이티드 감소된 스크래치 및 지문 가시성을 갖는 저 명암의 반사-방지 제품
US10647578B2 (en) * 2016-12-11 2020-05-12 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude N—H free and SI-rich per-hydridopolysilzane compositions, their synthesis, and applications
JP7033667B2 (ja) 2018-02-21 2022-03-10 レール・リキード－ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ペルヒドロポリシラザン組成物及びそれを使用する酸化物膜の形成方法
US11724963B2 (en) 2019-05-01 2023-08-15 Corning Incorporated Pharmaceutical packages with coatings comprising polysilazane
KR20250007571A (ko) * 2022-04-18 2025-01-14 메르크 파텐트 게엠베하 홈을 갖는 기판 상에 질화규소 필름을 제조하는 방법
JP2024043265A (ja) * 2022-09-16 2024-03-29 国立大学法人山形大学 バリア層構造の製造方法およびバリア層構造
US11972973B1 (en) 2023-10-04 2024-04-30 Chun-Ming Lin Semiconductor structure and method of manufacturing a semiconductor structure

Citations (2)

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JP2006261616A (ja) * 2005-03-18 2006-09-28 Seiko Epson Corp 成膜方法、半導体装置および電子機器
WO2010024378A1 (ja) * 2008-08-29 2010-03-04 独立行政法人産業技術総合研究所 酸化ケイ素薄膜または酸窒化ケイ素化合物薄膜の製造方法およびこの方法で得られる薄膜

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JP2790163B2 (ja) 1993-07-29 1998-08-27 富士通株式会社 シリコン酸化膜の形成方法、半導体装置の製造方法及びフラットディスプレイ装置の製造方法
JPH07206410A (ja) 1994-01-17 1995-08-08 Toshiba Corp シリコン窒化膜の形成方法
JP4049841B2 (ja) 1996-12-27 2008-02-20 Ａｚエレクトロニックマテリアルズ株式会社 窒化珪素薄膜の形成方法
US6107172A (en) 1997-08-01 2000-08-22 Advanced Micro Devices, Inc. Controlled linewidth reduction during gate pattern formation using an SiON BARC
US6306560B1 (en) * 1998-12-02 2001-10-23 Advanced Micro Devices, Inc. Ultra-thin resist and SiON/oxide hard mask for metal etch
JP2001176788A (ja) 1999-12-21 2001-06-29 Hitachi Ltd パターン形成方法および半導体装置
WO2002009478A1 (fr) 2000-07-24 2002-01-31 Tdk Corporation Dispositif luminescent
JP2003118029A (ja) 2001-10-16 2003-04-23 Asahi Glass Co Ltd ガスバリヤ性有機基材およびそれを用いたエレクトロルミネッセンス素子
JP2002270690A (ja) * 2002-02-07 2002-09-20 Nec Corp 半導体装置における配線構造
JP2008305974A (ja) 2007-06-07 2008-12-18 Elpida Memory Inc 酸化膜形成用塗布組成物およびそれを用いた半導体装置の製造方法
JP2010080709A (ja) * 2008-09-26 2010-04-08 Toshiba Corp シリコン酸化膜の形成方法および不揮発性半導体記憶装置の製造方法
JP4976590B2 (ja) 2009-06-10 2012-07-18 パイオニア株式会社 コンタクトホールの形成方法、半導体装置の製造方法及び半導体装置
IN2012DN00642A (enExample) 2009-07-17 2015-08-21 Mitsui Chemicals Inc

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006261616A (ja) * 2005-03-18 2006-09-28 Seiko Epson Corp 成膜方法、半導体装置および電子機器
WO2010024378A1 (ja) * 2008-08-29 2010-03-04 独立行政法人産業技術総合研究所 酸化ケイ素薄膜または酸窒化ケイ素化合物薄膜の製造方法およびこの方法で得られる薄膜

Also Published As

Publication number Publication date
US20130164690A1 (en) 2013-06-27
WO2011158119A3 (ja) 2012-03-01
WO2011158119A2 (ja) 2011-12-22
EP2584593B8 (en) 2019-09-25
EP2584593A4 (en) 2013-12-11
JP2012004349A (ja) 2012-01-05
TW201205673A (en) 2012-02-01
EP2584593A2 (en) 2013-04-24
US9029071B2 (en) 2015-05-12
EP2584593B1 (en) 2019-05-08

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