TWI575092B - A vapor deposition device with temperature control collimating unit - Google Patents

A vapor deposition device with temperature control collimating unit Download PDF

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TWI575092B
TWI575092B TW104126361A TW104126361A TWI575092B TW I575092 B TWI575092 B TW I575092B TW 104126361 A TW104126361 A TW 104126361A TW 104126361 A TW104126361 A TW 104126361A TW I575092 B TWI575092 B TW I575092B
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unit
plated
housing
collimating
gas molecules
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TW201706430A (en
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yun-xiang Wei
Jia-jun LIU
Wen-Yu Xiao
You-Zhe Cai
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Description

具有溫控準直單元的蒸鍍裝置 Vapor deposition device with temperature control collimation unit

本發明是有關於一種用於沉積有機電致發光(Organic Electro-Luminescence,EL)平面顯示器的蒸鍍裝置,特別是指一種具有溫控準直單元的蒸鍍裝置。 The present invention relates to an evaporation apparatus for depositing an organic electro-luminescence (EL) flat panel display, and more particularly to an evaporation apparatus having a temperature-controlled collimation unit.

由於技術的演進,近年來,開發了各式各樣的平面顯示器,其中,有機EL的低耗電、高速響應性受到高度矚目。有機EL是使用有機膜的層疊結構,形成紅、綠、藍三種像素,最後再由這三種像素形成圖案,技術上可以使用具有預定圖案的遮罩搭配蒸鍍來達成。 Due to the evolution of technology, various flat panel displays have been developed in recent years, and the low power consumption and high-speed response of organic ELs have been highly noticed. The organic EL is a laminated structure using an organic film, and forms three kinds of pixels of red, green, and blue, and finally forms a pattern from the three kinds of pixels, and can be technically achieved by using a mask having a predetermined pattern in combination with vapor deposition.

但由於在蒸鍍過程中,多數氣體粒子分別以直射和斜向入射通過遮罩,斜向入射的氣體粒子則因為遮罩的厚度所產生的遮蔽效應,容易造成膜厚不均(如,部分像素的膜厚中間厚但周緣薄)的現象。因此,周緣厚度較小的部分各像素使得EL平面顯示器於實際運作以進行混合時,不只容易影響畫面的解析度亦造成圖案顯示品質的劣化。 However, since most of the gas particles are incident through the mask in direct and oblique directions during the evaporation process, the obliquely incident gas particles are likely to cause uneven film thickness due to the shadowing effect of the thickness of the mask (eg, part). The phenomenon that the film thickness of the pixel is thick in the middle but the periphery is thin. Therefore, when the pixels of the peripheral portion having a small peripheral thickness allow the EL flat panel display to be actually operated for mixing, it is not only easy to affect the resolution of the screen but also deteriorate the pattern display quality.

參閱圖1,為了克服遮罩的遮蔽效應,如中國第CN 103430625 A公開號發明專利案所公開的具有限制板的蒸鍍裝置9,是用以供一原物料(圖未示)氣化成多數氣體分 子95,以令該等氣體分子95成膜於一基板96。如圖1所示,該具有限制板的蒸鍍裝置9包含:一真空腔體(圖未示),且由下而上依序還包含位在該真空腔體內的一蒸鍍源91、一組彼此平行且間隔排列並垂直于該蒸鍍源91的限制板92,及一具有複數開口941的遮罩94。該基板96設置於該真空腔體內,以位在遮罩94的上方。通過在該蒸鍍源91與該遮罩94之間所設置之平行排列的該等限制板92來提高該等氣體粒子95於行進時的指向性。也就是說,該等限制板92阻擋斜向入射的氣體粒子95,並只容許直射的氣體粒子95行進於相鄰限制板92所共同定義的一維空間中,從而令行進於各一維空間中的氣體分子95導入該遮罩94的各開口941中。 Referring to FIG. 1, in order to overcome the shadowing effect of the mask, the vapor deposition device 9 having the limiting plate disclosed in the Chinese Patent Publication No. CN 103430625 A is used for vaporizing a raw material (not shown) into a majority. Gas fraction Sub 95 is used to form the gas molecules 95 on a substrate 96. As shown in FIG. 1 , the vapor deposition device 9 having a limiting plate comprises: a vacuum chamber (not shown), and further includes an evaporation source 91 and a gas located in the vacuum chamber from bottom to top. The grouping plates 92 are parallel to each other and spaced apart and perpendicular to the evaporation source 91, and a mask 94 having a plurality of openings 941. The substrate 96 is disposed within the vacuum chamber to be positioned above the mask 94. The directivity of the gas particles 95 during traveling is improved by the restriction plates 92 arranged in parallel between the vapor deposition source 91 and the mask 94. That is, the limiting plates 92 block the obliquely incident gas particles 95 and allow only the direct gas particles 95 to travel in the one-dimensional space defined by the adjacent limiting plates 92, thereby allowing travel in each one-dimensional space. The gas molecules 95 are introduced into the respective openings 941 of the mask 94.

此處需補充說明的是,為了避免沉積在各限制板92之一表面上的氣體粒子95受到二次氣化而重新進行蒸鍍,該等限制板92的溫度須保持在低於該蒸鍍源91的溫度,甚至需另外於該等限制板92連接一冷卻裝置(圖未示)以進一步降溫。雖然經降溫的該等限制板92能提高該等氣體粒子95的指向性且防止二次蒸鍍。但是部分斜向入射的氣體粒子95仍會沉積在各限制板92的表面,造成該等限制板92的間距減少,甚至堵塞相鄰限制板92間的一維空間,因而降低蒸鍍效率。 It should be additionally noted here that in order to prevent the gas particles 95 deposited on one surface of each of the limiting plates 92 from being vaporized by secondary gasification, the temperature of the limiting plates 92 must be kept below the vapor deposition. The temperature of the source 91 is even further connected to the limiting plate 92 to a cooling device (not shown) for further cooling. Although the temperature limiting plate 92 can improve the directivity of the gas particles 95 and prevent secondary vapor deposition. However, a portion of the obliquely incident gas particles 95 are still deposited on the surface of each of the restricting plates 92, causing the spacing of the restricting plates 92 to be reduced, and even blocking the one-dimensional space between the adjacent restricting plates 92, thereby reducing the evaporation efficiency.

因此,如何設計一套蒸鍍裝置,在利用限制板92以克服該遮罩94所造成的遮蔽效應,同時亦能提升蒸鍍效率,是此技術領域的相關技術人員所待突破的難題。 Therefore, how to design a vapor deposition device, using the limiting plate 92 to overcome the shielding effect caused by the mask 94, and also improving the evaporation efficiency, is a problem to be solved by those skilled in the art.

因此,本發明之目的,即在提供一種具有溫控準直單元的蒸鍍裝置。 Accordingly, it is an object of the present invention to provide an evaporation apparatus having a temperature-controlled collimating unit.

於是,本發明具有溫控準直單元的蒸鍍裝置,是用以使一原物料氣化成多數氣體分子並令該等氣體分子沉積於一待鍍物上。該具有溫控準直單元的蒸鍍裝置包含:一真空腔體單元、一氣化單元、一準直單元,及一加熱單元。 Thus, the vapor deposition apparatus of the present invention having a temperature-controlled collimation unit is for vaporizing a raw material into a plurality of gas molecules and depositing the gas molecules on a material to be plated. The vapor deposition device with a temperature-controlled collimating unit comprises: a vacuum chamber unit, a gasification unit, a collimating unit, and a heating unit.

該真空腔體單元包括一底部及一相反於該底部的頂部,並定義出一密閉反應室,該待鍍物是設置在該真空腔體單元的頂部以位在該密閉反應室內。該氣化單元設置於該真空腔體單元的底部並能令該原物料氣化成該等氣體分子。該氣化單元包括一位在該密閉反應室內的殼體,該殼體界定出一用以容置該原物料的容置空間,且該殼體的一頂部形成有至少一與該容置空間連通的射出口。該準直單元能拆卸地設置於該殼體與該待鍍物間並形成有至少一通道。該通道具有一面向該殼體之射出口的入口端及一面向該待鍍物的出口端,且是自該入口端朝該待鍍物準直地延伸,令該等氣體分子自該射出口離開該容置空間時能通過該通道以朝該待鍍物行進。該加熱單元連接於該準直單元並用以氣化堆積於該準直單元之一內部的一沉積物。該沉積物是一部分氣體分子於行經該通道時所堆積而成。 The vacuum chamber unit includes a bottom portion and a top portion opposite to the bottom portion, and defines a closed reaction chamber, the object to be plated being disposed at the top of the vacuum chamber unit to be positioned in the closed reaction chamber. The gasification unit is disposed at the bottom of the vacuum chamber unit and is capable of vaporizing the raw material into the gas molecules. The gasification unit includes a housing in the closed reaction chamber, the housing defines an accommodating space for accommodating the raw material, and a top portion of the housing is formed with at least one and the accommodating space Connected shots. The collimating unit is detachably disposed between the housing and the object to be plated and formed with at least one passage. The passage has an inlet end facing the injection opening of the casing and an outlet end facing the object to be plated, and extends from the inlet end toward the object to be plated, so that the gas molecules are from the injection port When exiting the accommodating space, the passage can be made to travel toward the object to be plated. The heating unit is coupled to the collimating unit and is used to vaporize a deposit deposited inside one of the collimating units. The deposit is formed by a portion of the gas molecules as they travel through the channel.

本發明之功效在於,該部分氣體分子能夠在該準直單元所限定的通道中有效地朝上行進,並同時藉由該 加熱單元氣化沉積於該準直單元內部的沉積物,避免該通道受該沉積物所阻塞,並從而提升蒸鍍效率。 The effect of the present invention is that the portion of the gas molecules can effectively travel upward in the channel defined by the collimating unit, and at the same time The heating unit vaporizes the deposit deposited inside the collimating unit to prevent the passage from being blocked by the deposit and thereby increasing the evaporation efficiency.

1‧‧‧真空腔體單元 1‧‧‧vacuum chamber unit

11‧‧‧底部 11‧‧‧ bottom

12‧‧‧頂部 12‧‧‧ top

13‧‧‧密閉反應室 13‧‧‧Closed reaction chamber

2‧‧‧氣化單元 2‧‧‧ gasification unit

21‧‧‧殼體 21‧‧‧ housing

211‧‧‧頂部 211‧‧‧ top

22‧‧‧容置空間 22‧‧‧ accommodating space

23‧‧‧射出口 23‧‧‧ shots

3‧‧‧框板 3‧‧‧Box board

30‧‧‧通道 30‧‧‧ channel

301‧‧‧內環面 301‧‧‧ Inner torus

31‧‧‧入口端 31‧‧‧ entrance end

32‧‧‧出口端 32‧‧‧export end

4‧‧‧遮罩 4‧‧‧ mask

40‧‧‧開口 40‧‧‧ openings

6‧‧‧加熱單元 6‧‧‧heating unit

7‧‧‧冷卻單元 7‧‧‧Cooling unit

71‧‧‧金屬板 71‧‧‧Metal plates

711‧‧‧貫孔 711‧‧‧through holes

72‧‧‧冷卻管路 72‧‧‧Cooling line

81‧‧‧原物料 81‧‧‧Original materials

82‧‧‧氣體分子 82‧‧‧ gas molecules

83‧‧‧待鍍物 83‧‧‧The object to be plated

Z‧‧‧軸線方向 Z‧‧‧ axis direction

本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一立體示意圖,說明中國第CN 103430625 A公開號發明專利案所公開的具有限制板的蒸鍍裝置;圖2是一立體示意圖,說明本發明具有溫控準直單元的蒸鍍裝置的一實施例;圖3是一沿圖2的直線Ⅲ-Ⅲ所取得的剖視示意圖,說明該實施例的一真空腔體單元、一氣化單元、一準直單元、一加熱單元、一遮罩,及一冷卻單元。 Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a perspective view showing the steaming of the limiting plate disclosed in the Chinese Patent Publication No. WO 103430625 A. FIG. 2 is a perspective view showing an embodiment of the vapor deposition apparatus having a temperature-controlled collimating unit of the present invention; and FIG. 3 is a cross-sectional view taken along line III-III of FIG. 2, illustrating the implementation. For example, a vacuum chamber unit, a gasification unit, a collimation unit, a heating unit, a mask, and a cooling unit.

參閱圖2與圖3,本發明具有溫控準直單元的蒸鍍裝置的一實施例,是用以使一原物料81氣化成多數氣體分子82並令該等氣體分子82沉積於一待鍍物83上。該實施例包含:一真空腔體單元1、一氣化單元2、一準直單元、一遮罩4、一加熱單元6,及一冷卻單元7。 Referring to FIG. 2 and FIG. 3, an embodiment of an evaporation device having a temperature-controlled collimating unit is used to vaporize a raw material 81 into a plurality of gas molecules 82 and deposit the gas molecules 82 in a gas to be plated. On object 83. This embodiment comprises: a vacuum chamber unit 1, a gasification unit 2, a collimation unit, a mask 4, a heating unit 6, and a cooling unit 7.

該真空腔體單元1包括一底部11及一相反於該底部11的頂部12,並定義出一密閉反應室13。該待鍍物83是設置在該真空腔體單元1的頂部12,以位在該密閉反應室13內。熟悉此技術領域的相關技術人員都能知道,該真空腔體單元單元1實質上具有一包括該底部11與頂部12 並界定出該密閉反應室13之不鏽鋼腔體,以及一用以令該密閉反應室13呈現真空狀態的抽氣幫浦(圖未示)。但不鏽鋼腔體與抽氣幫浦並非本發明之技術特徵,於此不再多加贅述。 The vacuum chamber unit 1 includes a bottom portion 11 and a top portion 12 opposite the bottom portion 11, and defines a closed reaction chamber 13. The object to be plated 83 is disposed at the top portion 12 of the vacuum chamber unit 1 to be positioned in the sealed reaction chamber 13. Those skilled in the art will appreciate that the vacuum chamber unit unit 1 has substantially one including the bottom portion 11 and the top portion 12. And defining a stainless steel cavity of the closed reaction chamber 13 and an evacuation pump (not shown) for causing the sealed reaction chamber 13 to assume a vacuum state. However, the stainless steel cavity and the pumping pump are not technical features of the present invention, and will not be further described herein.

該氣化單元2設置於該真空腔體單元1的底部11,並能令該原物料81氣化成該等氣體分子82。該氣化單元2包括一位在該密閉反應室13內的殼體21。該殼體21界定出一用以容置該原物料81的容置空間22,且該殼體21的一頂部211形成有至少一與該容置空間22連通的射出口23。熟悉此技術領域的相關技術人員應當知道,該氣化單元2能令該原物料81氣化成該等氣體分子82,除了包括該殼體(如,坩堝)21外,實質上還包括一圍繞該殼體21之用以加熱並氣化該容置空間22內之原物料81的電阻式加熱線圈(圖未示),或一帶有一聚焦透鏡組與一電子束(electron beam)產生件的電子槍(electron gun)。前述電阻式加熱線圈或電子槍等構件並非本發明之技術特徵,於此不再多加贅述。 The gasification unit 2 is disposed at the bottom 11 of the vacuum chamber unit 1 and is capable of vaporizing the raw material 81 into the gas molecules 82. The gasification unit 2 includes a housing 21 in the closed reaction chamber 13. The housing 21 defines an accommodating space 22 for receiving the raw material 81. A top portion 211 of the housing 21 is formed with at least one injection opening 23 communicating with the accommodating space 22. Those skilled in the art will appreciate that the gasification unit 2 can vaporize the raw material 81 into the gas molecules 82, including, in addition to the housing (e.g., helium) 21, a surrounding a resistive heating coil (not shown) of the housing 21 for heating and gasifying the raw material 81 in the accommodating space 22, or an electron gun with a focusing lens group and an electron beam generating member ( Electron gun). The components such as the aforementioned resistive heating coil or electron gun are not technical features of the present invention, and will not be further described herein.

該準直單元能拆卸地設置於該殼體21與該待鍍物83間,並形成有至少一通道30。該通道30具有一面向該殼體21之射出口23的入口端31,及一面向該待鍍物83的出口端32,是自該入口端31朝該待鍍物83準直地延伸。該準直單元令該等氣體分子82自該射出口23離開該容置空間22時能通過該通道30以朝該待鍍物83行進。在本發明該實施例中,該殼體21之頂部211所形成之射出口23 的數量為複數個,且該準直單元之通道30的數量為複數個。 The collimating unit is detachably disposed between the housing 21 and the object to be plated 83, and is formed with at least one passage 30. The passage 30 has an inlet end 31 facing the injection opening 23 of the housing 21, and an outlet end 32 facing the object to be plated 83 extending from the inlet end 31 toward the object to be plated 83. The collimating unit can pass the gas molecules 82 through the channel 30 to travel toward the object to be plated 83 when the gas molecules 82 exit the accommodating space 22. In this embodiment of the invention, the ejection opening 23 formed by the top 211 of the housing 21 The number of the channels is plural, and the number of the channels 30 of the collimating unit is plural.

該遮罩4設置於該待鍍物83的一表面與該準直單元之各出口端32間。該遮罩4具有多數供該等氣體分子82通過的開口40。 The mask 4 is disposed between a surface of the object to be plated 83 and each of the outlet ends 32 of the collimating unit. The mask 4 has a plurality of openings 40 through which the gas molecules 82 pass.

該加熱單元6連接於該準直單元並用以氣化堆積於該準直單元之一內部的一沉積物(圖未示)。該沉積物是一部分氣體分子82於行經各通道30時所堆積而成。 The heating unit 6 is connected to the collimating unit and is used to vaporize a deposit (not shown) deposited inside one of the collimating units. The deposit is formed by a portion of the gas molecules 82 as they travel through each of the channels 30.

該冷卻單元7設置於該遮罩4及該準直單元間,並包括一金屬板71與一冷卻管路72。該金屬板71具有多數供該等氣體分子82通過的貫孔711。該冷卻管路72連接該金屬板71且能供一冷卻水(圖未示)循環流通。各通道30之出口端32是分別面向該金屬板71的各貫孔711。更具體地來說,該準直單元是由一實質平行於該遮罩4設置,且內設有複數如圖3所示之內環面301的框板3所構成。在本發明該實施例中,該框板3的各內環面301對應定義出各通道30,且該加熱單元6是一與該準直單元(即,框板5)接觸的加熱線圈。 The cooling unit 7 is disposed between the mask 4 and the collimating unit, and includes a metal plate 71 and a cooling pipe 72. The metal plate 71 has a plurality of through holes 711 through which the gas molecules 82 pass. The cooling line 72 is connected to the metal plate 71 and can be circulated through a cooling water (not shown). The outlet end 32 of each channel 30 is a respective through hole 711 facing the metal plate 71. More specifically, the collimating unit is constituted by a frame plate 3 which is disposed substantially parallel to the mask 4 and is provided with a plurality of inner ring faces 301 as shown in FIG. In this embodiment of the present invention, each inner ring surface 301 of the frame plate 3 defines each channel 30, and the heating unit 6 is a heating coil that is in contact with the collimating unit (ie, the frame plate 5).

較佳地,各通道30於平行於該框板3之一頂面的一截面形狀是一圓形、一六角形、一四角形,或一三角形。在本發明該實施例中,各通道30的截面形狀是一如圖2所示的圓形並具有一直徑,且各直徑為0.5至10公分為例做說明,但不以此為限。更佳地,各通道30的入口端31到該殼體21之各射出口23的一最短距離為1至150公分,各通道30的出口端32到該遮罩4的一最短距離為1至150 公分。換句話說,該框板3之各內環面301能使各通道30呈現出一個二維空間。該等冷卻單元7與該與該加熱單元6的一最短距離為0.01公分至10公分。 Preferably, a cross-sectional shape of each channel 30 parallel to a top surface of the frame plate 3 is a circle, a hexagon, a quadrangle, or a triangle. In this embodiment of the present invention, the cross-sectional shape of each of the channels 30 is a circular shape as shown in FIG. 2 and has a diameter, and each of the diameters is 0.5 to 10 cm, for example, but not limited thereto. More preferably, a shortest distance from the inlet end 31 of each channel 30 to each of the ejection openings 23 of the housing 21 is 1 to 150 cm, and a shortest distance from the outlet end 32 of each channel 30 to the mask 4 is 1 to 150 Centimeters. In other words, the inner annular faces 301 of the frame plate 3 enable each of the channels 30 to assume a two-dimensional space. The shortest distance between the cooling unit 7 and the heating unit 6 is from 0.01 cm to 10 cm.

經上述兩段說明可知,自該殼體21之各射出口23離開該容置空間22的該等氣體分子82於進入各通道30的入口端31後,是能在各內環面301所限定的二維空間中朝各通道30的出口端32準直地行進。 As can be seen from the above two paragraphs, the gas molecules 82 exiting the accommodating space 22 from the respective outlets 23 of the casing 21 can be defined by the inner ring faces 301 after entering the inlet end 31 of each channel 30. The two-dimensional space travels straight toward the exit end 32 of each channel 30.

值得一提的是,在本發明該實施例中,該殼體21與該框板3是能相對該遮罩4呈現出水平式的移動,以令該殼體21與該框板3於水平移動的過程中,進行大面積的蒸鍍製程。然而,該殼體21亦能相對於該框板3水平式的移動,該框板3則固定於該真空腔體單元1,故不以本實施例為限。 It should be noted that in the embodiment of the present invention, the housing 21 and the frame plate 3 can be horizontally moved relative to the mask 4 to make the housing 21 and the frame plate 3 horizontal. During the moving process, a large-area evaporation process is performed. However, the housing 21 can also be horizontally moved relative to the frame plate 3. The frame plate 3 is fixed to the vacuum chamber unit 1, and is not limited to this embodiment.

具體地說,當該等氣體分子82自該殼體21之容置空間22內往各射出口23行進時,是先沿著各射出口23的一軸線方向Z自各射出口23射出。該等氣體分子82於射出後,經該殼體21之各射出口23射出之指向性高的氣體分子82(即分子行進方向與該軸線方向Z的夾角小者)是能夠通過各通道30的入口端31,且經該殼體21之各射出口23射出之指向性低的氣體分子82是被該框板3的內環面301(即,該準直單元)修正以降低其噴射角度(即分子行進方向與該軸線方向Z的夾角)。因此,通過各通道30之入口端31的該部分氣體分子82,可有效地位在各內環面301所限定的二維空間內朝上行進,並自各通道30的出口 端32離開,以持續沿著該軸線方向Z朝該遮罩4的各開口40行進,並從而沉積於該待鍍物83的表面上。 Specifically, when the gas molecules 82 travel from the accommodation space 22 of the casing 21 to the respective injection ports 23, they are first emitted from the respective injection ports 23 along the axial direction Z of each of the injection ports 23. After the gas molecules 82 are emitted, the gas molecules 82 having high directivity emitted through the respective ejection openings 23 of the casing 21 (that is, the angle between the molecular traveling direction and the axial direction Z is small) are able to pass through the respective channels 30. The inlet end 31, and the gas molecules 82 having low directivity emitted through the respective ejection openings 23 of the housing 21 are corrected by the inner annular surface 301 of the frame plate 3 (i.e., the collimating unit) to lower the ejection angle thereof ( That is, the angle between the direction of travel of the molecules and the direction Z of the axis). Therefore, the portion of the gas molecules 82 passing through the inlet end 31 of each channel 30 can effectively travel upward in the two-dimensional space defined by each inner annulus 301, and from the outlet of each channel 30. The end 32 exits to continue along the axis direction Z toward the respective openings 40 of the mask 4 and thereby deposit on the surface of the object to be plated 83.

須進一步說明的是,在行進於各通道30內的該部分氣體分子82中,噴射角度稍大於直射行進的氣體分子82因容易堆積於各內環面301上而形成該沉積物,使各通道30阻塞而導致蒸鍍效率下降。因此,本發明藉由該加熱單元(加熱線圈)6加熱該框板3(即,該準直單元),令沉積於各內環面301的該沉積物重新氣化,以防止各通道30阻塞。又,為了防止該加熱單元6所產生的一熱能損壞該遮罩4,該熱能可透過該冷卻單元7的金屬板71先行導出,並進一步地透過該冷卻管路72內部所流通的該冷卻水(圖未示)將引導至該金屬板71的熱能導出。 It should be further noted that in the portion of the gas molecules 82 traveling in each channel 30, the gas molecules 82 whose ejection angle is slightly larger than the direct traveling are formed by being easily deposited on the inner ring faces 301, so that the channels are formed. 30 blocking causes the evaporation efficiency to decrease. Therefore, the present invention heats the frame plate 3 (i.e., the collimating unit) by the heating unit (heating coil) 6, and re-vaporizes the deposit deposited on each inner ring surface 301 to prevent the respective channels 30 from being blocked. . Moreover, in order to prevent a thermal energy generated by the heating unit 6 from damaging the mask 4, the thermal energy can be firstly conducted through the metal plate 71 of the cooling unit 7, and further transmitted through the cooling water flowing through the inside of the cooling pipe 72. (not shown) the heat energy guided to the metal plate 71 is led out.

綜上所述,本發明具有溫控準直單元的蒸鍍裝置,該部分氣體分子82能夠在各內環面301所限定的二維空間(即,各通道30)中有效地朝上行進,避免該遮罩4所造成的遮蔽效應,並同時藉由該加熱單元6氣化沉積於各內環面301上的該沉積物以避免各通道30阻塞,並從而提升蒸鍍效率,故確實能達成本發明之目的。 In summary, the present invention has an evaporation device of a temperature-controlled collimating unit, and the portion of the gas molecules 82 can effectively travel upward in a two-dimensional space defined by each inner ring surface 301 (ie, each channel 30). The shielding effect caused by the mask 4 is avoided, and at the same time, the deposit deposited on each inner ring surface 301 by the heating unit 6 avoids the blockage of the respective channels 30, thereby improving the evaporation efficiency, so The object of the invention is achieved.

惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,即凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 However, the above is only the embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, all the equivalent equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still It is within the scope of the patent of the present invention.

1‧‧‧真空腔體單元 1‧‧‧vacuum chamber unit

11‧‧‧底部 11‧‧‧ bottom

12‧‧‧頂部 12‧‧‧ top

13‧‧‧密閉反應室 13‧‧‧Closed reaction chamber

21‧‧‧殼體 21‧‧‧ housing

3‧‧‧框板 3‧‧‧Box board

30‧‧‧通道 30‧‧‧ channel

4‧‧‧遮罩 4‧‧‧ mask

6‧‧‧加熱單元 6‧‧‧heating unit

7‧‧‧冷卻單元 7‧‧‧Cooling unit

71‧‧‧金屬板 71‧‧‧Metal plates

711‧‧‧貫孔 711‧‧‧through holes

72‧‧‧冷卻管路 72‧‧‧Cooling line

83‧‧‧待鍍物 83‧‧‧The object to be plated

Claims (8)

一種具有溫控準直單元的蒸鍍裝置,是用以使一原物料氣化成多數氣體分子並令該等氣體分子沉積於一待鍍物上,該具有溫控準直單元的蒸鍍裝置包含:一真空腔體單元,包括一底部及一相反於該底部的頂部,並定義出一密閉反應室,該待鍍物是設置在該真空腔體單元的頂部以位在該密閉反應室內;一氣化單元,設置於該真空腔體單元的底部並能令該原物料氣化成該等氣體分子,該氣化單元包括一位在該密閉反應室內的殼體,該殼體界定出一用以容置該原物料的容置空間,且該殼體的一頂部形成有至少一與該容置空間連通的射出口;一準直單元,能拆卸地設置於該殼體與該待鍍物間並形成有至少一通道,該通道具有一面向該殼體之射出口的入口端及一面向該待鍍物的出口端,且是自該入口端朝該待鍍物準直地延伸,令該等氣體分子自該射出口離開該容置空間時能通過該通道以朝該待鍍物行進;及一加熱單元,連接於該準直單元並用以氣化堆積於該準直單元之一內部的一沉積物,該沉積物是一部分氣體分子於行經該通道時所堆積而成;其中,該加熱單元是一與該準直單元接觸的加熱線圈。 An evaporation device having a temperature-controlled collimating unit for vaporizing a raw material into a plurality of gas molecules and depositing the gas molecules on a material to be plated, the vapor deposition device having a temperature-controlled collimating unit comprises a vacuum chamber unit comprising a bottom portion and a top portion opposite to the bottom portion, and defining a closed reaction chamber, the object to be plated being disposed at the top of the vacuum chamber unit to be positioned in the closed reaction chamber; a chemical unit, disposed at the bottom of the vacuum chamber unit and capable of vaporizing the raw material into the gas molecules, the gasification unit comprising a housing in the sealed reaction chamber, the housing defining a capacity An accommodating space of the raw material is disposed, and a top portion of the housing is formed with at least one ejection opening communicating with the accommodating space; a collimating unit detachably disposed between the housing and the object to be plated Forming at least one passage having an inlet end facing the injection opening of the housing and an outlet end facing the object to be plated, and extending from the inlet end toward the object to be plated, so that Gas molecules exit from the exit Passing through the channel to travel toward the object to be plated; and a heating unit coupled to the collimating unit and for vaporizing a deposit deposited inside one of the collimating units, the deposit being part of The gas molecules are stacked as they pass through the channel; wherein the heating unit is a heating coil in contact with the collimating unit. 一種具有溫控準直單元的蒸鍍裝置,是用以使一原物料氣化成多數氣體分子並令該等氣體分子沉積於一待鍍 物上,該具有溫控準直單元的蒸鍍裝置包含:一真空腔體單元,包括一底部及一相反於該底部的頂部,並定義出一密閉反應室,該待鍍物是設置在該真空腔體單元的頂部以位在該密閉反應室內;一氣化單元,設置於該真空腔體單元的底部並能令該原物料氣化成該等氣體分子,該氣化單元包括一位在該密閉反應室內的殼體,該殼體界定出一用以容置該原物料的容置空間,且該殼體的一頂部形成有至少一與該容置空間連通的射出口;一準直單元,能拆卸地設置於該殼體與該待鍍物間並形成有至少一通道,該通道具有一面向該殼體之射出口的入口端及一面向該待鍍物的出口端,且是自該入口端朝該待鍍物準直地延伸,令該等氣體分子自該射出口離開該容置空間時能通過該通道以朝該待鍍物行進;一加熱單元,連接於該準直單元並用以氣化堆積於該準直單元之一內部的一沉積物,該沉積物是一部分氣體分子於行經該通道時所堆積而成;及一遮罩及一冷卻單元,該遮罩設置於該待鍍物的一表面與該準直單元間,該冷卻單元設置於該遮罩及該準直單元間。 An evaporation device having a temperature-controlled collimating unit for vaporizing a raw material into a plurality of gas molecules and depositing the gas molecules in a gas to be plated The vapor deposition device having a temperature-controlled collimating unit comprises: a vacuum chamber unit including a bottom portion and a top portion opposite to the bottom portion, and defining a closed reaction chamber, wherein the object to be plated is disposed The top of the vacuum chamber unit is located in the closed reaction chamber; a gasification unit is disposed at the bottom of the vacuum chamber unit and can vaporize the raw material into the gas molecules, and the gasification unit includes one of the gas seals a housing in the reaction chamber, the housing defines an accommodating space for accommodating the raw material, and a top portion of the housing is formed with at least one ejection opening communicating with the accommodating space; a collimating unit, Removably disposed between the housing and the object to be plated and formed with at least one passage, the passage having an inlet end facing the injection opening of the housing and an outlet end facing the object to be plated, and The inlet end is collimated toward the object to be plated, so that the gas molecules can pass through the channel to travel toward the object to be plated from the exit port; a heating unit is connected to the collimating unit and used Gasified in the collimation list An internal deposit formed by a portion of the gas molecules as they travel through the passage; and a mask and a cooling unit disposed on a surface of the object to be plated and the collimating The cooling unit is disposed between the unit and the collimating unit. 如請求項2所述的具有溫控準直單元的蒸鍍裝置,其中,該遮罩具有多數供該等氣體分子通過的開口;該冷卻單元包括一金屬板與一冷卻管路,該金屬板具有多數供該等氣體分子通過的貫孔,該冷卻管路連接該金屬板 且能供一冷卻水循環流通。 The vapor deposition device of claim 2, wherein the mask has a plurality of openings through which the gas molecules pass; the cooling unit includes a metal plate and a cooling pipe, the metal plate Having a plurality of through holes for the passage of the gas molecules, the cooling pipe connecting the metal plates And can supply a cooling water circulation. 如請求項3所述的具有溫控準直單元的蒸鍍裝置,其中,該殼體之頂部所形成之射出口的數量為複數個,該準直單元之通道的數量為複數個,且各通道之出口端是分別面向該金屬板的各貫孔。 The vapor deposition device with a temperature-controlled collimating unit according to claim 3, wherein the number of the ejection openings formed at the top of the housing is plural, and the number of the channels of the collimating unit is plural, and each The outlet ends of the channels are respectively facing the through holes of the metal plate. 如請求項4所述的具有溫控準直單元的蒸鍍裝置,其中,該準直單元是由一實質平行於該遮罩設置且內設有複數內環面的框板所構成,該框板的各內環面對應定義出各通道。 The vapor deposition device with a temperature-controlled collimation unit according to claim 4, wherein the collimation unit is constituted by a frame plate substantially parallel to the mask and having a plurality of inner annular surfaces therein, the frame Each inner ring surface of the board defines each channel. 如請求項5所述的具有溫控準直單元的蒸鍍裝置,其中,各通道的入口端到該殼體之各射出口的一最短距離為1至150公分,各通道的出口端到該遮罩的一最短距離為1至150公分。 The vapor deposition device with a temperature-controlled collimating unit according to claim 5, wherein a shortest distance from the inlet end of each channel to each of the ejection openings of the housing is 1 to 150 cm, and the outlet end of each channel is The shortest distance of the mask is 1 to 150 cm. 如請求項5所述的具有準直管的蒸鍍裝置,其中,各通道於平行於該框板之一頂面的一截面形狀是一圓形、一六角形、一四角形,或一三角形。 An evaporation device having a collimating tube according to claim 5, wherein each of the channels has a circular shape, a hexagonal shape, a square shape, or a triangular shape in a cross-sectional shape parallel to a top surface of the frame plate. 如請求項7所述的具有溫控準直單元的蒸鍍裝置,其中,各截面形狀是一圓形並具有一直徑,且各直徑為0.5至10公分。 An evaporation apparatus having a temperature-controlled collimating unit according to claim 7, wherein each of the cross-sectional shapes is a circle and has a diameter, and each diameter is 0.5 to 10 cm.
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Publication number Priority date Publication date Assignee Title
US4006268A (en) * 1975-03-17 1977-02-01 Airco, Inc. Vapor collimation in vacuum deposition of coatings
US4233937A (en) * 1978-07-20 1980-11-18 Mcdonnell Douglas Corporation Vapor deposition coating machine
US5290358A (en) * 1992-09-30 1994-03-01 International Business Machines Corporation Apparatus for directional low pressure chemical vapor deposition (DLPCVD)
CN103430625A (en) * 2011-03-15 2013-12-04 夏普株式会社 Vapor deposition device, vapor deposition method, and method for producing organic EL display device

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