TWI575091B - A vapor deposition device with collimator tube - Google Patents
A vapor deposition device with collimator tube Download PDFInfo
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- TWI575091B TWI575091B TW104126360A TW104126360A TWI575091B TW I575091 B TWI575091 B TW I575091B TW 104126360 A TW104126360 A TW 104126360A TW 104126360 A TW104126360 A TW 104126360A TW I575091 B TWI575091 B TW I575091B
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- 238000007740 vapor deposition Methods 0.000 title claims description 14
- 238000001704 evaporation Methods 0.000 claims description 17
- 238000006243 chemical reaction Methods 0.000 claims description 16
- 230000008020 evaporation Effects 0.000 claims description 16
- 239000002994 raw material Substances 0.000 claims description 13
- 238000002309 gasification Methods 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008016 vaporization Effects 0.000 claims description 4
- 230000004308 accommodation Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 40
- 238000002347 injection Methods 0.000 description 10
- 239000007924 injection Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 241000274582 Pycnanthus angolensis Species 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000011087 paperboard Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- Physical Vapour Deposition (AREA)
Description
本發明是有關於一種用於沉積有機發光二極體(OLED)平面顯示器的蒸鍍裝置,特別是指一種具有準直管(collimator)的蒸鍍裝置。 The present invention relates to an evaporation apparatus for depositing an organic light emitting diode (OLED) flat panel display, and more particularly to an evaporation apparatus having a collimator.
近年來由於技術的演進,因而開發了各式各樣的平面顯示器;其中,又以OLED所構成的平面顯示器具有低耗電、高速響應性與自發光性等優勢,而受到高度矚目。OLED平面顯示器是使用蒸鍍裝置來使紅光、綠光與藍光等三種有機發光材料沉積在一表面形成有薄膜電晶體(TFT)的基板上,以令具有特定圖案之紅光、綠光與藍光有機材料在TFT上配置出紅、綠、藍等三種像素。前述具有特定圖案之紅光、綠光與藍光有機材料,技術上可以透過使用具有預定圖案的遮罩(即,遮罩的多數開口)搭配蒸鍍法一起來達成。 In recent years, due to the evolution of technology, various flat-panel displays have been developed. Among them, flat-panel displays composed of OLEDs have the advantages of low power consumption, high-speed responsiveness, and self-illumination, and are highly regarded. The OLED flat panel display uses an evaporation device to deposit three kinds of organic light-emitting materials such as red light, green light and blue light on a substrate on which a thin film transistor (TFT) is formed, so that the red light and the green light with a specific pattern are The blue organic material is provided with three kinds of pixels such as red, green and blue on the TFT. The aforementioned red, green and blue organic materials having a specific pattern can be technically achieved by using a mask having a predetermined pattern (i.e., a plurality of openings of the mask) in combination with an evaporation method.
但由於有機氣體分子在蒸鍍過程中,是以直射和斜向入射至遮罩的各開口處。對於斜向入射的有機氣體分子而言,遮罩本身的厚度容易對有機氣體分子造成遮蔽效應(shadowing)並導致成膜厚度不均(即,各像素中間厚但周緣薄)。因此,以此等厚度不均之有機發光材料所構成的 像素來完成的OLED平面顯示器,其在實際運作並進行混合時,極易影響顯示畫面的解析度並導致圖案顯示品質劣化。 However, since the organic gas molecules are directly and obliquely incident on the openings of the mask during the evaporation process. For obliquely incident organic gas molecules, the thickness of the mask itself tends to cause shadowing of the organic gas molecules and result in uneven film thickness (i.e., the pixels are thick in the middle but the periphery is thin). Therefore, it is composed of an organic light-emitting material having an uneven thickness The OLED flat panel display completed by pixels can easily affect the resolution of the display screen and cause deterioration of the pattern display quality when actually operating and mixing.
參閱圖1,為了克服遮罩的遮蔽效應,中華民國第TW201437396A早期公開號發明專利案(以下稱前案)公開一種具有限制板的蒸鍍裝置9,是用以供一原物料(圖未示)氣化成多數氣體分子95,以令該等氣體分子95成膜於一基板96。如圖1所示,該具有限制板的蒸鍍裝置9包含:一真空腔體(圖未示)、一蒸鍍源91、一組沿著一Y方向彼此平行且間隔排列的上限制板92、一組沿著一垂直於該Y方向的X方向彼此平行且間隔排列的下限制板93,及一具有複數開口941的遮罩94。 Referring to Fig. 1, in order to overcome the shadowing effect of the mask, the Republic of China TW201437396A early publication invention patent case (hereinafter referred to as the previous case) discloses an evaporation device 9 having a limiting plate for supplying a raw material (not shown) The gas molecules 95 are vaporized to form the gas molecules 95 on a substrate 96. As shown in FIG. 1, the vapor deposition device 9 having a limiting plate comprises: a vacuum chamber (not shown), an evaporation source 91, and a set of upper limiting plates 92 arranged parallel to each other along a Y direction and spaced apart. A set of lower restricting plates 93 which are parallel to each other and spaced apart in the X direction perpendicular to the Y direction, and a mask 94 having a plurality of openings 941.
該蒸鍍源91、該等上限制板92、該等下限制板93,及該遮罩94皆位於該真空腔體內。該等下限制板93與該等上限制板92是位於該蒸鍍源91的上方,且位於該遮罩94的下方,其令自該蒸鍍源91所氣化出來之不具指向性的氣體分子95能透過該等上限制板92,使得通過該等下限制板93且指向性較差的氣體分子95再次受到該等上限制板92所限制,以令通過該等上限制板92的氣體分子95能夠行進至該遮罩94的該等開口941,並在該基板96上成膜。因此,該等下限制板93與該等上限制板92能夠侷限該等氣體分子95,令該等氣體分子95分成兩階段朝上行進;即,先在該等下限位板93所共同定義的一維空間內朝上行進,並進一步地在該等上限位板92所共同定義的一 維空間內朝上行進。 The evaporation source 91, the upper limiting plates 92, the lower limiting plates 93, and the mask 94 are all located within the vacuum chamber. The lower limiting plate 93 and the upper limiting plate 92 are located above the evaporation source 91 and are located below the mask 94, which is a gas that is vaporized from the evaporation source 91 and which is not directional. The molecules 95 can pass through the upper limiting plates 92 such that the gas molecules 95 passing through the lower limiting plates 93 and having poor directivity are again restricted by the upper limiting plates 92 to pass the gas molecules passing through the upper limiting plates 92. The 95 can travel to the openings 941 of the mask 94 and form a film on the substrate 96. Therefore, the lower limiting plates 93 and the upper limiting plates 92 can confine the gas molecules 95 such that the gas molecules 95 travel in two stages upward; that is, first defined in the lower limit plates 93. a one-dimensional space that travels upwards and is further defined in the upper limit plate 92 Travel in the dimension space upwards.
該前案雖提升了該等氣體分子95的指向性,但 是該等下限制板93與該等上限制板92於空間上的排列關係,使得該蒸鍍裝置9的真空腔體需整體向上延伸。因此,從該蒸鍍源91到該遮罩94的距離增加,導致需較大的真空腔體空間。 Although the former case improves the directivity of the gas molecules 95, The spatial arrangement of the lower limiting plates 93 and the upper limiting plates 92 is such that the vacuum chamber of the vapor deposition device 9 needs to extend upward as a whole. Therefore, the distance from the evaporation source 91 to the mask 94 is increased, resulting in a large vacuum chamber space.
經上述說明可知,改良用於沉積OLED平面顯 示器之蒸鍍裝置的結構,令氣體分子能夠確實受到限制以向上行進,且有效地利用真空腔體的空間,是此技術領域的相關技術人員所待突破的難題。 According to the above description, the improved method for depositing OLED plane display The structure of the vapor deposition device of the display allows the gas molecules to be reliably restricted to travel upward, and the effective use of the space of the vacuum chamber is a problem to be solved by those skilled in the art.
因此,本發明之目的,即在提供一種具有準直管的蒸鍍裝置。 Accordingly, it is an object of the present invention to provide an evaporation apparatus having a collimating tube.
於是,本發明具有準直管的蒸鍍裝置,是用以使一原物料氣化成多數氣體分子並令該等氣體分子沉積於一待鍍物上。該具有準直管的蒸鍍裝置包含:一個真空腔體單元、一個氣化單元,及至少一個準直管。 Therefore, the vapor deposition device of the present invention has a collimating tube for vaporizing a raw material into a plurality of gas molecules and depositing the gas molecules on a material to be plated. The vapor deposition apparatus having a collimating tube includes: a vacuum chamber unit, a gasification unit, and at least one collimating tube.
該真空腔體單元包括一底部及一相反於該底部的頂部,並定義出一密閉反應室。該待鍍物是設置在該頂部以位在該密閉反應室內。該氣化單元設置於該真空腔體單元的底部,並能令該原物料氣化成該等氣體分子。該氣化單元包括一位在該密閉反應室內的殼體,該殼體界定出一用以容置該原物料的容置空間,且該殼體的一頂部形成有至少一與該容置空間連通的射出口。該準直管能拆卸地 設置於該殼體與該待鍍物間,該準直管具有一面向該殼體之射出口的入口端,及一面向該待鍍物的出口端,且是自該入口端朝向該待鍍物準直地延伸。 The vacuum chamber unit includes a bottom and a top opposite the bottom and defines a closed reaction chamber. The object to be plated is placed on the top to be positioned in the closed reaction chamber. The gasification unit is disposed at the bottom of the vacuum chamber unit and can vaporize the raw material into the gas molecules. The gasification unit includes a housing in the closed reaction chamber, the housing defines an accommodating space for accommodating the raw material, and a top portion of the housing is formed with at least one and the accommodating space Connected shots. The collimating tube is detachably Between the housing and the object to be plated, the collimating tube has an inlet end facing the ejection opening of the housing, and an outlet end facing the object to be plated, and is from the inlet end toward the plate to be plated The object extends straight.
本發明之功效在於,利用該準直管是自該射出 口朝向該待鍍物準直地延伸,且該準直管之入口端與出口端分別面向該殼體之射出口與該待鍍物,即可令該等氣體分子在該準直管內所限定的二維空間中有效地朝上行進,並藉此縮減該準直管於該密閉反應室內所佔據的空間。 The effect of the invention is that the collimating tube is used to shoot from the same a port extending toward the object to be plated, and an inlet end and an outlet end of the collimating tube respectively facing the ejection opening of the housing and the object to be plated, so that the gas molecules are in the collimating tube The defined two-dimensional space effectively travels upwards and thereby reduces the space occupied by the collimating tube within the closed reaction chamber.
1‧‧‧真空腔體單元 1‧‧‧vacuum chamber unit
11‧‧‧底部 11‧‧‧ bottom
12‧‧‧頂部 12‧‧‧ top
13‧‧‧密閉反應室 13‧‧‧Closed reaction chamber
2‧‧‧氣化單元 2‧‧‧ gasification unit
21‧‧‧殼體 21‧‧‧ housing
211‧‧‧頂部 211‧‧‧ top
22‧‧‧容置空間 22‧‧‧ accommodating space
23‧‧‧射出口 23‧‧‧ shots
24‧‧‧凸伸部 24‧‧‧Stretching
3‧‧‧準直管 3‧‧‧ Collimation tube
31‧‧‧入口端 31‧‧‧ entrance end
32‧‧‧出口端 32‧‧‧export end
4‧‧‧遮罩 4‧‧‧ mask
40‧‧‧開口 40‧‧‧ openings
5‧‧‧框板 5‧‧‧Box board
51‧‧‧內環面 51‧‧‧ Inner torus
81‧‧‧原物料 81‧‧‧Original materials
82‧‧‧氣體分子 82‧‧‧ gas molecules
83‧‧‧待鍍物 83‧‧‧The object to be plated
Z‧‧‧軸線方向 Z‧‧‧ axis direction
本發明之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:圖1是一立體示意圖,說明中華民國第TW201437396A早期公開號發明專利案所公開之具有限制板的蒸鍍裝置;圖2是一立體示意圖,說明本發明具有準直管的蒸鍍裝置的一實施例;圖3是一沿圖2的直線Ⅲ-Ⅲ所取得的剖視示意圖,說明該實施例的一真空腔體單元、一氣化單元,及複數準直管。 Other features and effects of the present invention will be apparent from the following description of the drawings, wherein: FIG. 1 is a perspective view showing the steaming of the limiting plate disclosed in the Korean Patent Publication No. TW201437396A. FIG. 2 is a perspective view showing an embodiment of a vapor deposition apparatus having a collimating tube according to the present invention; and FIG. 3 is a cross-sectional view taken along line III-III of FIG. 2, illustrating the embodiment. A vacuum chamber unit, a gasification unit, and a plurality of collimating tubes.
參閱圖2與圖3,為本發明具有準直管的蒸鍍裝置的一實施例,是用以使一原物料81氣化成多數氣體分子82並令該等氣體分子82沉積於一待鍍物83上。該實施例包含:一真空腔體單元1、一氣化單元2、複數準直管3, 及一遮罩4。 Referring to FIG. 2 and FIG. 3, an embodiment of the vapor deposition apparatus having a collimating tube is used to vaporize a raw material 81 into a plurality of gas molecules 82 and deposit the gas molecules 82 on a material to be plated. 83. The embodiment comprises: a vacuum chamber unit 1, a gasification unit 2, and a plurality of collimating tubes 3, And a mask 4.
該真空腔體單元1包括一底部11及一相反於該底部11的頂部12,並定義出一密閉反應室13。該待鍍物83是設置在該頂部12以位在該密閉反應室13內。熟悉此技術領域的相關技術人員都能知道,該真空腔體單元1實質上具有一包括該底部11與頂部12並界定出該密閉反應室13之不鏽鋼腔體,以及一用以令該密閉反應室13呈現真空狀態的抽氣幫浦(圖未示),但不鏽鋼腔體與抽氣幫浦並非本發明之技術特徵,於此不再多加贅述。 The vacuum chamber unit 1 includes a bottom portion 11 and a top portion 12 opposite the bottom portion 11, and defines a closed reaction chamber 13. The object to be plated 83 is disposed at the top portion 12 to be positioned in the sealed reaction chamber 13. As will be appreciated by those skilled in the art, the vacuum chamber unit 1 essentially has a stainless steel chamber including the bottom portion 11 and the top portion 12 defining the closed reaction chamber 13, and a means for the sealing reaction. The chamber 13 presents a pumping pump in a vacuum state (not shown), but the stainless steel chamber and the pumping pump are not technical features of the present invention, and will not be further described herein.
該氣化單元2設置於該真空腔體單元1的底部11,並能令該原物料81氣化成該等氣體分子82。該氣化單元2包括一位在該密閉反應室13內的殼體21,該殼體21界定出一用以容置該原物料81的容置空間22,且該殼體21的一頂部211形成有至少一與該容置空間22連通的射出口23。熟悉此技術領域的相關技術人員應當知道,該氣化單元2能令原物料81氣化成該等氣體分子82,除了包括該殼體21外(如,坩堝),實質上還包括一圍繞該殼體21之用以加熱並氣化該容置空間22內之原物料81的加熱線圈(圖未示),或一帶有一聚焦透鏡組與一電子束(electron beam)產生件的電子槍(electron gun)。前述加熱線圈或電子槍等構件並非本發明之技術特徵,於此不再多加贅述。 The gasification unit 2 is disposed at the bottom 11 of the vacuum chamber unit 1 and is capable of vaporizing the raw material 81 into the gas molecules 82. The gasification unit 2 includes a housing 21 in the closed reaction chamber 13. The housing 21 defines an accommodating space 22 for accommodating the raw material 81, and a top portion 211 of the housing 21. At least one injection port 23 communicating with the accommodating space 22 is formed. Those skilled in the art will appreciate that the gasification unit 2 can vaporize the raw material 81 into the gas molecules 82, except that the housing 21 (e.g., helium) is included, and substantially includes a shell surrounding the shell. a heating coil (not shown) of the body 21 for heating and gasifying the raw material 81 in the accommodating space 22, or an electron gun with a focusing lens group and an electron beam generating member . The components such as the heating coil or the electron gun are not the technical features of the present invention, and will not be further described herein.
該等準直管3能拆卸地設置於該殼體21與該待鍍物83間。該等準直管3具有一面向該殼體21之射出口23的入口端31,及一面向該待鍍物83的出口端32,且是 自各入口端31朝向該待鍍物83準直地延伸。 The collimating tubes 3 are detachably disposed between the housing 21 and the object to be plated 83. The collimating tubes 3 have an inlet end 31 facing the injection opening 23 of the housing 21, and an outlet end 32 facing the object to be plated 83, and The inlet ends 31 extend straightly toward the object to be plated 83.
該遮罩4設置於該待鍍物83的一表面與各準直管3之出口端32間。該遮罩4具有多數供該等氣體分子82的開口40,且各準直管3的出口端32是面向該遮罩4的各開口40。 The mask 4 is disposed between a surface of the object to be plated 83 and an exit end 32 of each of the collimating tubes 3. The mask 4 has a plurality of openings 40 for the gas molecules 82, and the outlet ends 32 of the respective collimating tubes 3 are openings 40 facing the mask 4.
詳細地來說明,在本實施例中,該殼體21之頂部211所形成之射出口23的數量為複數個,且該殼體21還自其頂部211之各射出口23處朝各準直管3凸伸出有一凸伸部24,以令各凸伸部24對應定義出各射出口23。更具體地來說,各凸伸部24是分別令各射出口23呈現出一個直立的通道,以令該等氣體分子82在離開該容置空間22前,能夠先行於該等凸伸部24內有效地朝上行進。 In detail, in the present embodiment, the number of the ejection openings 23 formed by the top portion 211 of the housing 21 is plural, and the housing 21 is also collimated from the respective ejection openings 23 of the top portion 211 thereof. A protruding portion 24 is protruded from the tube 3 so that each of the protruding portions 24 defines the respective ejection openings 23. More specifically, each of the protrusions 24 is such that each of the ejection openings 23 presents an upright passage, so that the gas molecules 82 can advance before the detachment of the accommodating space 22 The inside effectively moves upwards.
在本發明該實施例中,該等準直管3是由一實質平行於該遮罩4設置,且內設有複數內環面51的框板5所構成;換句話說,該框板5的各內環面51對應定義出各準直管3的一通道。較佳地,各準直管3的通道於平行於該框板5之一頂面的一截面形狀是一圓形、一六角形、一四角形,或一三角形。在本發明該實施例中,各準直管3之通道於平行於該框板5之頂面的截面形狀是以一如圖2所示的一圓形並具有一直徑,且各直徑為0.5至10公分為例作說明,但不以此為限。更佳地,各準直管3的入口端31到該殼體21之各射出口23的一最短距離為1至150公分,各準直管3的出口端32到該遮罩4的一最短距離為1至150公分。 In this embodiment of the invention, the collimating tubes 3 are formed by a frame plate 5 disposed substantially parallel to the mask 4 and having a plurality of inner annular faces 51 therein; in other words, the frame plate 5 Each of the inner annular faces 51 defines a passage of each of the collimating tubes 3. Preferably, the cross-sectional shape of the passage of each of the collimating tubes 3 parallel to a top surface of the frame plate 5 is a circle, a hexagon, a square, or a triangle. In this embodiment of the present invention, the cross-sectional shape of the passage of each of the collimating tubes 3 parallel to the top surface of the frame plate 5 is a circle as shown in FIG. 2 and has a diameter, and each diameter is 0.5. To 10 centimeters for illustration, but not limited to this. More preferably, a shortest distance from the inlet end 31 of each collimating tube 3 to each of the ejection openings 23 of the housing 21 is 1 to 150 cm, and the outlet end 32 of each collimating tube 3 is the shortest to the mask 4. The distance is from 1 to 150 cm.
此處需補充說明的是,當該等氣體分子82自該殼體21之容置空間22內往各凸伸部24的射出口23行進時,是先沿著各凸伸部24的一軸線方向Z自各射出口23射出;該等氣體分子82於射出後,經該殼體21之各射出口23射出的一部分氣體分子82是能夠通過該等準直管3的入口端31,且經該殼體21之各射出口23射出的剩餘氣體分子82是被該等準直管3所修正。根據上述各段說明可知,本發明該實施例之各準直管3的通道是由該框板5之內設的各內環面51所對應定義而成。因此,通過該等準直管3之入口端31的該部分氣體82,可有效地位在各內環面51所限定的二維空間內朝上行進,並自該等準直管3的出口端32離開,以持續沿著該軸線方向Z朝該遮罩4的各開口40行進,並從而沉積於該待鍍物83的表面上。 It should be noted that when the gas molecules 82 travel from the accommodating space 22 of the housing 21 to the ejection opening 23 of each protruding portion 24, they are first along an axis of each protruding portion 24. The direction Z is emitted from each of the injection ports 23; after the gas molecules 82 are emitted, a part of the gas molecules 82 emitted through the respective injection ports 23 of the casing 21 are able to pass through the inlet end 31 of the collimating tubes 3, and The remaining gas molecules 82 emitted from the respective injection ports 23 of the casing 21 are corrected by the collimator tubes 3. According to the description of each of the above paragraphs, the passage of each of the collimating tubes 3 of the embodiment of the present invention is defined by the respective inner annular faces 51 provided in the frame plate 5. Therefore, the portion of the gas 82 passing through the inlet end 31 of the collimating tube 3 can effectively travel upward in the two-dimensional space defined by the inner annular faces 51, and from the outlet end of the collimating tubes 3 32 exits to continue along the axis direction Z toward the respective openings 40 of the mask 4 and thereby deposit on the surface of the object to be plated 83.
又,在本發明該實施例中,該殼體21與該框板5是能相對該遮罩4呈現出水平式的移動,以令該殼體21與該框板5於水平移動的過程中,進行大面積的蒸鍍製程。然而,該殼體21亦能相對於該框板5水平式的移動,該框板5則固定於該真空腔體單元1,故不以本實施例為限。 Moreover, in the embodiment of the present invention, the housing 21 and the frame plate 5 are horizontally movable relative to the mask 4 to allow the housing 21 and the frame plate 5 to move horizontally. , a large-area evaporation process. However, the housing 21 can also be horizontally moved relative to the frame plate 5. The frame plate 5 is fixed to the vacuum chamber unit 1 and is not limited to this embodiment.
此處要補充說明的是,該遮罩4的開口40大小與該等準直管3之通道的直徑相關,亦即平均開口40較大的遮罩4,是搭配直徑較大的準直管3,反之亦然。藉此,可強化該等準直管3的對準能力,更能大幅減少該遮罩4所造成的遮蔽效應。 It should be added here that the size of the opening 40 of the mask 4 is related to the diameter of the channel of the collimating tube 3, that is, the mask 4 having a larger average opening 40, which is a collimating tube with a larger diameter. 3, and vice versa. Thereby, the alignment ability of the collimating tubes 3 can be enhanced, and the shadowing effect caused by the mask 4 can be greatly reduced.
整合上述內容具體地來說,當該氣化單元2內 的該原物料81氣化成該等氣體分子82後,該等氣體分子82是先受該等凸伸部24的射出口23所限制,以沿著該軸線方向Z朝該等準直管3的入口端31行進,噴射角度(即分子行進方向與該軸線方向Z的夾角)較大的氣體分子82(即,前述剩餘氣體分子82)是受該框板5的內環面51所修正,使前述剩餘氣體分子82的噴射角度減小,而噴射角度較小(較準直)的該部分氣體分子82則可順利地進入各準直管3的入口端31,以在各內環面51所限定的二維空間內朝上行進,並自該出口端32離開以持續沿著該軸線方向Z朝該遮罩4的各開口40行進,從而沉積於該待鍍物83的表面上。換句話說,該等準直管3能修正噴射角度較大且容易造成遮蔽效應的氣體分子82,使通過該等準直管3的氣體分子82之噴射角度減小。因此,一方面能夠大幅減少該遮罩4所造成的遮蔽效應,令通過該遮罩4之各開口40且沉積於該待鍍物83表面上之氣體分子82所構成的一鍍膜具有更加精確的圖案;另一方面,該框板5內設的該等內環面51可直接限定出各準直管3的二維空間,縮減了該等準直管3於該密閉反應室13內所佔用的空間,無需如同該前案般,尚需透過該等下限位板93與該等上限位板92所各自限定的一維空間來侷限該等氣體分子95的指向性,以致於該蒸鍍源91到該遮罩94的距離增加,且需要較大的真空腔體來設置該等下限位板93與該等上限位板92。 Integrating the above content, specifically, within the gasification unit 2 After the raw material 81 is vaporized into the gas molecules 82, the gas molecules 82 are first restricted by the injection ports 23 of the protrusions 24 to face the alignment tubes 3 along the axis direction Z. The inlet end 31 travels, and the gas molecules 82 (i.e., the aforementioned residual gas molecules 82) having a larger injection angle (i.e., the angle between the molecular traveling direction and the axial direction Z) are corrected by the inner annular surface 51 of the frame plate 5, so that The injection angle of the remaining gas molecules 82 is reduced, and the portion of the gas molecules 82 having a smaller injection angle (more collimated) can smoothly enter the inlet end 31 of each of the collimating tubes 3 to be in each inner annular surface 51. The defined two-dimensional space travels upwardly and exits from the outlet end 32 to continue along the axis direction Z toward the respective openings 40 of the mask 4 for deposition on the surface of the object to be plated 83. In other words, the collimating tubes 3 can correct the gas molecules 82 having a large ejection angle and easily causing a shadowing effect, so that the ejection angle of the gas molecules 82 passing through the collimating tubes 3 is reduced. Therefore, on the one hand, the shadowing effect caused by the mask 4 can be greatly reduced, and a coating film formed by the openings 40 of the mask 4 and deposited on the surface of the object to be plated 83 can be more precise. The inner ring surface 51 of the frame plate 5 directly defines the two-dimensional space of each of the collimating tubes 3, which reduces the occupation of the collimating tubes 3 in the closed reaction chamber 13. The space of the gas molecules 95 is limited by the one-dimensional space defined by the lower limit plates 93 and the upper limit plates 92, as in the previous case, so that the directivity of the gas molecules 95 is limited, so that the evaporation source The distance from the 91 to the mask 94 is increased, and a larger vacuum chamber is required to position the lower limit plate 93 and the upper limit plates 92.
綜上所述,本發明具有準直管的蒸鍍裝置,該等準直管3是自各入口端31朝該待鍍物83準直地延伸, 以致於噴射角度較大的氣體分子82能受該等準直管3(即,該框板5的內環面51)所調整使其噴射角度減小,且噴射角度較小的氣體分子82能夠在各準直管3內所限定的二維空間中有效地朝上行進至該待鍍物83表面,避免該遮罩4所造成的遮蔽效應,同時縮減該等準直管3於該密閉反應室13內所占據的空間,故確實能達成本發明之目的。 In summary, the present invention has a vapor deposition device for collimating tubes, and the collimating tubes 3 are vertically aligned from the inlet ends 31 toward the object to be plated 83. Therefore, the gas molecules 82 having a larger injection angle can be adjusted by the collimating tubes 3 (i.e., the inner annular surface 51 of the frame plate 5) so that the ejection angle is reduced, and the gas molecules 82 having a smaller ejection angle can Effectively moving upward in the two-dimensional space defined in each of the collimating tubes 3 to the surface of the object to be plated 83, avoiding the shadowing effect caused by the mask 4, and reducing the collimating tube 3 in the sealing reaction The space occupied by the chamber 13 is indeed capable of achieving the object of the present invention.
惟以上所述者,僅為本發明之實施例而已,當不能以此限定本發明實施之範圍,即凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本發明專利涵蓋之範圍內。 However, the above is only the embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, all the equivalent equivalent changes and modifications according to the scope of the patent application and the patent specification of the present invention are still It is within the scope of the patent of the present invention.
1‧‧‧真空腔體單元 1‧‧‧vacuum chamber unit
11‧‧‧底部 11‧‧‧ bottom
12‧‧‧頂部 12‧‧‧ top
13‧‧‧密閉反應室 13‧‧‧Closed reaction chamber
21‧‧‧殼體 21‧‧‧ housing
24‧‧‧凸伸部 24‧‧‧Stretching
3‧‧‧準直管 3‧‧‧ Collimation tube
4‧‧‧遮罩 4‧‧‧ mask
5‧‧‧框板 5‧‧‧Box board
83‧‧‧待鍍物 83‧‧‧The object to be plated
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TW104126360A TWI575091B (en) | 2015-08-13 | 2015-08-13 | A vapor deposition device with collimator tube |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4006268A (en) * | 1975-03-17 | 1977-02-01 | Airco, Inc. | Vapor collimation in vacuum deposition of coatings |
US5290358A (en) * | 1992-09-30 | 1994-03-01 | International Business Machines Corporation | Apparatus for directional low pressure chemical vapor deposition (DLPCVD) |
US5803973A (en) * | 1995-10-31 | 1998-09-08 | Balzers Und Leybold Deutschland Holding Ag | Apparatus for coating a substrate by chemical vapor deposition |
US6592728B1 (en) * | 1998-08-04 | 2003-07-15 | Veeco-Cvc, Inc. | Dual collimated deposition apparatus and method of use |
-
2015
- 2015-08-13 TW TW104126360A patent/TWI575091B/en not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4006268A (en) * | 1975-03-17 | 1977-02-01 | Airco, Inc. | Vapor collimation in vacuum deposition of coatings |
US5290358A (en) * | 1992-09-30 | 1994-03-01 | International Business Machines Corporation | Apparatus for directional low pressure chemical vapor deposition (DLPCVD) |
US5803973A (en) * | 1995-10-31 | 1998-09-08 | Balzers Und Leybold Deutschland Holding Ag | Apparatus for coating a substrate by chemical vapor deposition |
US6592728B1 (en) * | 1998-08-04 | 2003-07-15 | Veeco-Cvc, Inc. | Dual collimated deposition apparatus and method of use |
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