JP2010159454A - Film deposition apparatus and film deposition method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method, for forming an organic thin film of high density by the mask film deposition. <P>SOLUTION: As for a mask 70, an inner wall surface of a through-hole 72 is inclined, and the through-hole 72 is narrower toward a substrate 7 side, and wider toward a discharging device 50 side. Thus, even when the thickness of a mask body 71 is 50-200 μm, the vapor incident obliquely on an edge part of a bottom surface 74 of the through-hole 72 can reach the substrate 7, and an organic thin film 8 having the uniform film thickness is formed. Since the mask body 71 is thick, the mask 70 is hardly deformed, and recyclable by the cleaning or the like, and the accuracy of film deposition is not degraded. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a film forming apparatus and a film forming method.

In recent years, organic EL display devices have attracted attention in the field of display devices.
In order to form an organic thin film of an organic EL display device, a vapor deposition device as shown by reference numeral 101 in FIG. 6 is conventionally used.
The vapor deposition apparatus 101 has a vacuum chamber 111. A substrate holder 112 is horizontally disposed near the ceiling in the vacuum chamber 111. The substrate holder 112 is attached to a motor 118. When the motor 118 is operated, the substrate holder 112 rotates around a vertical rotation axis, and the substrate holder 112 rotates in a horizontal plane.

On the bottom wall side in the vacuum chamber 111, the evaporation container 115 in which the organic material 116 is disposed is disposed at a position separated from the rotation axis of the substrate holder 112. The evaporation container 115 has a small opening (discharge hole) for discharging vapor.
In order to form an organic thin film using the vapor deposition apparatus 101, first, a vacuum atmosphere is formed in the vacuum chamber 111 by the vacuum exhaust system 119, and the substrate which is a film formation target is maintained while the vacuum atmosphere is maintained. 113 is carried in and attached to the substrate holder 112.

The substrate holder 112 is rotated while the organic material 116 is heated by a heating device (not shown) to generate vapor of the organic material 116.
Reference numeral 117 schematically indicates the direction in which the vapor of the organic material 116 is discharged, and the vapor is diffused and discharged from the discharge hole of the evaporation container 115.

Since the opening of the evaporation container 115 is separated from the rotation axis of the substrate holder 112, the amount of vapor reaching the substrate 113 changes during one rotation of the substrate holder 112, and on average, approximately the same amount on the surface of the substrate 113. The steam has been made to reach.
By the way, when an organic film is formed only in a predetermined region of the substrate 113, mask film formation is performed in which a mask is disposed between the substrate and the emission hole.

FIG. 7 shows a state in which a mask 120 is mounted on the surface of the substrate 113, and an opening 125 is formed in the mask 120, and the organic film is partially exposed to the bottom surface of the opening 125 by the vapor that has passed through the opening 125. Formed on the surface.
FIG. 8 is a partially enlarged view of the opening 125, and reference numerals 121 and 122 in the drawing indicate the flight directions of vapor incident on the mask 120 and the substrate 113.

Although the vapor in the flight direction 121 that does not intersect the mask 120 passes through the opening 125 and enters the substrate 113, the vapor in the flight direction 122 that intersects the mask 120 collides with the mask 120 and cannot reach the surface of the substrate 113.
The symbol θ _{p in} the figure indicates an incident angle that is an angle formed by a perpendicular H perpendicular to the substrate surface and the direction of flight of steam.

When the vapor is inclined with respect to the normal H and enters the mask 120 at an incident angle θ _p , a shadow is formed on the bottom surface of the opening 125 by the portion of the mask 120 that intersects the flight direction 122 of the vapor, and the edge of the bottom surface of the opening 125 Steam does not reach the part. Accordingly, the thin film 130 is formed on the bottom surface of the opening 125 only in an area smaller than the opening 125.

  If the thickness of the mask 120 is reduced, the portion intersecting with the flight direction 122 of the steam is reduced, and the area where the shadow of the bottom surface of the opening 125 can be made narrow. Therefore, the area of the thin film 130 formed on the bottom surface of the opening 125 is increased. Can do.

JP 2004-362908 A JP 2006-152396 A JP 2005-154879 A

  The organic EL display device for full color display has, for example, a pixel pitch (distance between centers) of 370 μm and a number of pixels of 1280 × 1024. Such a fine pixel pattern has a thin mask with a thickness of 18 μm or more and less than 50 μm. The film could not be formed unless it was 120.

  However, the thin mask 120 is easily bent, so that tension is applied when the mask 120 is mounted on the substrate 113, but there is a problem in that the opening 125 is distorted by the tension and film formation accuracy is lowered. In addition, since the mask 120 is easily damaged, there is a problem that cleaning is difficult.

  Therefore, a laser transfer method in which an organic material is transferred to a substrate by laser irradiation instead of the mask film formation has been proposed. However, the laser transfer method has a problem that the film formation cost is higher than the mask film formation.

  Further, in order to form a uniform film, it is necessary to generate a vapor from an evaporation source offset from the center of the substrate and rotate the substrate. However, it is difficult to rotate the substrate due to an increase in size of the substrate. In addition, since the space between the evaporation source and the substrate is wide, the waste of material is increased.

In order to solve the above-described problems, the present invention provides a vacuum chamber in which a substrate to be deposited is disposed, an evaporation source that generates vapor of a deposition material to be deposited on the substrate, and vapor generated in the evaporation source. A discharge device to be supplied, wherein at least a part of the discharge device is located inside the vacuum chamber, and a plurality of discharge holes are arranged apart from each other on a surface located inside the vacuum chamber of the discharge device A mask is disposed between the discharge portion and the substrate, and the vapor supplied to the discharge device is discharged from the discharge hole into the vacuum chamber and passes through the through hole of the mask. Reaches the substrate and forms a thin film, wherein the mask comprises a plate-like mask body having a thickness of 50 μm to 200 μm and a plurality of through holes formed in the mask body. And the mask has a surface on the basis. The substrate is disposed with the back surface facing the discharge portion, and the inner wall surface of each through-hole forms an acute angle with the substrate-side surface of the mask body, and the surface of the mask body on the discharge portion side A film forming apparatus in which an inclined portion having an obtuse angle is formed.
This invention is a film-forming apparatus, Comprising: The planar shape of the said through-hole is a polygon, The said inclination part is a film-forming apparatus formed in the all sides of the said through-hole.
The present invention is a film forming apparatus, wherein the planar shape of the through hole is elongated, and the inclined portion is formed on a long side of the through hole.
The present invention is a film forming apparatus, wherein an angle formed by the inclined portion and a perpendicular perpendicular to the surface of the mask main body is 52 ° or more and 65 ° or less.
The present invention supplies an organic material generated in an evaporation source to a discharge device, discharges the vapor into a vacuum chamber from a plurality of discharge holes provided in the discharge device, and discharges the substrate in the vacuum chamber and the discharge A film forming method in which a mask having a plurality of through holes formed in a plate-shaped mask body is disposed between the apparatus and a vapor passing through the through holes reaches the substrate to form an organic thin film. The thickness of the mask body is 50 μm or more and 200 μm or less, and the inner wall surface of the through hole forms an acute angle with the first surface that is one side of the mask body, and the first surface of the mask body The mask on which the inclined portion that forms an obtuse angle with the second surface, which is the opposite surface, is disposed such that the first surface faces the substrate and the second surface faces the discharge device. A film forming method for discharging the vapor from the discharge hole.
This invention is a film-forming method, Comprising: The film-forming method which makes the angle which the said inclination part and perpendicular | vertical perpendicular | vertical to said 1st surface make | form to 52 degrees or more and 65 degrees or less.

  Since the mask is thick, the through-holes are not easily distorted, the film formation accuracy is high, the cleaning is possible, and the life of the mask is long. Even if the pitch (distance between the centers) of the through holes is short and the through holes have a small diameter, a thin film can be uniformly formed on the bottom surface of the through hole of the substrate, and a full color organic EL with high density pixels. A display device can be manufactured. Since the organic thin film can be formed by mask film formation, the manufacturing cost of the organic EL display device is reduced.

Sectional drawing which shows an example of the film-forming apparatus of this invention The top view which shows typically an example of the film-forming apparatus of this invention Plan view showing an example of mask Plan view showing another example of mask Enlarged sectional view of the through-hole part of the mask Sectional drawing which shows an example of the film-forming apparatus of a prior art Sectional drawing which shows the state which has arrange | positioned the mask to the film-forming apparatus of a prior art Enlarged cross-sectional view of a prior art mask

  Reference numeral 1 in FIGS. 1 and 2 shows an example of a film forming apparatus of the present invention, and FIG. 1 corresponds to a cross-sectional view taken along the line AA in FIG. The film forming apparatus 1 includes a vacuum chamber 11, a discharge device 50 disposed inside the vacuum chamber 11, and an evaporation source 20 disposed outside the vacuum chamber 11. In FIG. 2, the vacuum chamber is omitted.

  The evaporation source 20 includes a tank 31, a heating chamber 21 disposed below the tank 31, and a supply pipe 36 disposed between the heating chamber 21 and the tank 31. The upper end of the supply pipe 36 is connected to the tank 31 and the lower end is connected to the heating chamber 21 in an airtight manner. The tank 31 and the heating chamber 21 are connected in an airtight manner through the supply pipe 36.

  A rotation shaft 35 is inserted through the supply pipe 36. A spiral thread groove is formed on the side surface of the rotation shaft 35. FIG. 1 shows a state in which a powdery organic material 39 is accommodated in a tank 31. When a rotating shaft 35 is rotated around a central axis in a supply pipe 36 by a rotating means (not shown), the organic material 39 is It moves downward in the supply pipe 36 through the screw groove of the rotating shaft 35, and falls into the heating chamber 21 from the lower end of the supply pipe 36.

  A heating table 22 is disposed immediately below the supply pipe 36 in the heating chamber 21. A vacuum evacuation system 19 is connected to the vacuum chamber 11, the heating chamber 21, and the tank 31, and a vacuum atmosphere is formed inside the vacuum chamber 11, the heating chamber 21, and the tank 31 by the vacuum evacuation system 19, and then the vacuum chamber While continuing the vacuum evacuation of 11, the vacuum evacuation of the heating chamber 21 and the tank 31 is stopped.

  The amount of the organic material 39 necessary for film formation with a desired film thickness and the amount of rotation of the rotating shaft 35 necessary for dropping the organic material 39 are obtained. The heating table 22 is heated above the evaporation temperature of the organic material 39 by the heating means 25, the rotation axis 35 is rotated by the calculated rotation amount, and the required amount of the organic material 39 is dropped on the heating table 22 and heated. A necessary amount of vapor of the organic material 39 is generated in the heating chamber 21.

One end of a pipe 49 is connected to the heating chamber 21, and the other end of the pipe 49 is connected to a single collection pipe 47. A heating device 46 is provided in the middle of the pipe 49, and the steam generated in the heating chamber 21 is sent to the collecting pipe 47 through the pipe 49 without being precipitated.
One end of a plurality of connecting pipes 48 is connected to the collecting pipe 47, and the other end of the connecting pipe 48 is connected to the discharge device 50. After the vapor fills the collecting pipe 47 and the concentration becomes uniform, The discharge device 50 is supplied through the connecting pipe 48.

The discharge device 50 has a discharge container 51. The inside of the discharge container 51 is divided into one or a plurality, and a connection pipe 48 is connected to each of the divided spaces 52, and steam is supplied from the collection pipe 47.
A plurality of discharge holes 60 are arranged in a matrix or a staggered pattern on the ceiling of the discharge container 51. Accordingly, a plurality of rows in which a plurality of discharge holes 60 are arranged at intervals are arranged in the same surface (discharge surface), and the discharge holes 60 are scattered. The discharge hole 60 may have an elongated shape. In this case, the discharge holes 60 are arranged in parallel with each other in the same plane.

One or more rows of discharge holes 60 (or one or more elongated discharge holes 60) are connected to each divided space of the discharge container 51, and discharge is made from the discharge holes 60 constituting the row to the internal space of the vacuum chamber 11. Is done.
The substrate 7 is carried into the vacuum chamber 11 while maintaining the vacuum atmosphere in the vacuum chamber 11, and before the vapor is released from the discharge hole 60, the substrate 7 is placed on the surface where the discharge hole 60 is arranged. A mask 70 which is disposed and aligned as described later is disposed in parallel with the substrate 7 between the substrate 7 and the discharge device 50.

  The mask 70 has a plate-shaped mask body 71 and a plurality of through holes 72 that penetrate the mask body 71 from the front surface to the back surface. The planar shape of the through holes 72 is a polygon such as a quadrangle and is arranged in a matrix or a staggered pattern (FIG. 3). Therefore, a plurality of rows in which the plurality of through holes 72 are arranged are arranged in the same plane with an interval.

  FIG. 5 is a cross-sectional view taken along the line BB of FIG. And is inclined so as to form an obtuse angle with the opposite surface (second surface 79). Therefore, the through hole 72 is narrower on the first surface 78 side than on the second surface 79 side.

The mask 70 is arranged with the first surface 78 facing the substrate 7 and the second surface 79 facing the discharge device 50. The through-hole 72 is wider on the discharge device 50 side than the substrate 7 side, and the inner wall surface 77 of the through-hole 72 is inclined from the perpendicular H perpendicular to the first and second surfaces 78 and 79.
Code theta _b in FIG. 5 illustrates the inclination angle is an angle formed by the perpendicular line H and the through hole 72 in the wall 77 (≦ 90 °).

In the conventional apparatus 101, the edge portion of the bottom surface of the through-hole (opening 125) is a shadow of the mask 120, and the vapor flying at the incident angle θ _p toward the edge portion cannot be reached (FIG. 8). In the present invention, the inner wall surface 77 of the through-hole 72 is inclined and the bottom surface 74 of the through-hole 72 is not shaded. Therefore, if the incident angle θ _i is equal to or less than the inclination angle θ _b , steam flying toward the edge portion of the bottom surface 74 Can pass through the through hole 72 and reach the substrate 7.
Therefore, even if the thickness of the mask main body 71 is as large as 50 μm or more and 200 μm or less, the vapor can reach the edge portion of the bottom surface 74, and the film thickness of the edge portion becomes thicker than the conventional one. 8 is formed.

Since the substrate 7 and the mask 70 are parallel to each other, the perpendicular H is also perpendicular to the substrate 7. If the angle between the perpendicular H and the flight direction D of the vapor is the incident angle θ _i (≦ 90 °), the incident angle The average of θ _i is smaller than the average of the incident angle θ _p of the conventional apparatus 101. That is, in the present invention, vapor having an incident angle θ _i equal to or smaller than the inclination angle θ _b can enter the periphery of the through-hole 72, so that the film formation efficiency of the organic thin film 8 is increased.

  When the necessary amount of the organic material 39 evaporates and the vapor is discharged from the discharge hole 60, the organic thin film 8 reaches the desired film thickness. The substrate 7 on which the organic thin film 8 is formed is carried out together with the mask 70 to the outside of the vacuum chamber 11, or the substrate 7 is removed from the mask 70, and the mask 70 is left inside the vacuum chamber 11. Unload from.

When leaving the mask 70 in the vacuum chamber 11, the unprocessed substrate 7 is carried into the vacuum chamber 11, and the mask 70 and the substrate 7 are exposed so that each film forming portion of the substrate 7 is exposed on the bottom surface of the through hole 72. In a state where the aligned mask 70 and the substrate 7 are disposed on the discharge device 50, vapor is discharged into the vacuum chamber 11 to start film formation.
When the mask 70 is carried out together with the substrate 7, the new substrate 7 and the mask 70 are aligned outside the vacuum chamber 11, and the positional relationship between the mask 70 and the substrate 7 is fixed and then the inside of the vacuum chamber 11. You may carry it in.

  If the film formation of the organic thin film 8 is continued, vapor is deposited on the mask 70 and the shape of the through-holes 72 becomes narrow, so that the film formation accuracy is lowered. Therefore, after forming the organic thin film 8 on one or more predetermined number of substrates 7 The mask 70 is removed from the substrate 7 and cleaning is performed.

The cleaning is not particularly limited to chemical cleaning such as etching, mechanical cleaning such as vacuum plasma cleaning, or brushing. However, since the mask body 71 is as thick as 50 μm or more, it is difficult to be deformed by any cleaning method. Therefore, the mask 70 can be used repeatedly, and as a result, the manufacturing cost of the organic EL display device is reduced.
Further, if the thickness of the mask 70 is as thick as 50 μm or more, the mask 70 does not bend even if tension is not applied as in the conventional case, and therefore a frame for the mask 70 is unnecessary.

When forming an organic EL display device for color display by forming organic thin film 8 of two or more colors such as red, blue, green, etc. at different locations, a plurality of film forming devices 1 of FIGS. The organic thin film 8 may be formed by a separate film forming apparatus 1.
Alternatively, the organic thin film 8 having two or more colors may be formed by one film forming apparatus 1. In this case, a plurality of evaporation sources 20 are connected to the discharge apparatus 50, and vapors of the organic materials 39 of the respective colors are separately supplied. The evaporation source 20 is evaporated.

In any case, after forming the organic thin film 8 of the first color, the mask 70 is replaced or the positional relationship between the mask 70 and the substrate 7 is changed, and the film forming portion 74 on which the organic thin film 8 is formed is masked. The second color film is formed after the film forming part 74 that is covered with the main body 71 and the organic thin film 8 is not formed is exposed to the bottom surface of the through hole 72.
If the replacement of the mask 70 (or the change of the positional relationship between the mask 70 and the substrate 7) and the film formation with the organic thin film 8 are repeated, the organic thin film 8 of two or more colors is formed in different locations, and the full color display is performed. An organic EL display device can also be manufactured.

  When manufacturing an organic EL display device for color display, a plurality of pixel electrodes are formed on one of the two substrates 7, and a common electrode is formed on the other substrate 7. Two substrates 7 are bonded so that the thin film 8 is sandwiched, and the organic thin film 8 of any one color is disposed on each pixel electrode.

When the pixel electrodes are scattered in a matrix or zigzag pattern, the staggered or matrix organic thin film 8 is formed using the mask 70 as shown in FIG. In this organic EL display device, a transistor such as a TFT is connected to each pixel electrode, and a voltage is applied to the selected pixel electrode, whereby the organic thin film 8 having a desired color and a desired position can emit light.
The planar shape of the through hole 72 of the mask 70 is not particularly limited, and may be a polygon such as a triangle or a quadrangle, or a circle such as a perfect circle.
When a plurality of elongated pixel electrodes are arranged in parallel, an elongated organic thin film is formed using a mask in which elongated holes such as ellipses and rectangles are formed.

  FIG. 4 is a plan view showing a mask 75 in which a plurality of elongated through-holes 76 are formed. The through-holes 76 are arranged in parallel to each other so that their centers are located on the same straight line L. FIG. Since the planar shape of the through hole 76 is elongated, it has two long sides parallel to each other, and the long side is adjacent to the other through hole 76.

Of the inner wall surface 77 of the through hole 76, an inclined portion that forms an acute angle with the first surface 78 on the substrate 7 side and forms an obtuse angle with the second surface 79 on the discharge device 50 side is at least a portion of the long side of the through hole 76. Is formed.
That is, an inclined portion is formed in a portion of the inner wall surface 77 of the through-hole 76 adjacent to the other through-hole 76, and even when the distance (pitch) between the centers of the through-holes 76 is narrow, with high accuracy. An organic thin film 8 can be formed.

  When the pixel electrode and the organic thin film 8 are elongated, the counter electrode is also elongated, and the two substrates 7 are bonded so that the pixel electrode and the counter electrode intersect. When the pixel electrode and the counter electrode are selected and a voltage is applied, the organic thin film 8 at the intersection of the electrodes emits light. Therefore, also in this case, light of a desired color can be emitted at a desired position.

As described above, the shapes of the masks 70 and 75 and the through holes 72 and 76 are not particularly limited. However, if the inclination angle θ _b is too large, it is difficult to narrow the interval between the through holes 72, and the inclination angle θ If _b is too small, since the vapor oblique incidence is blocked, the thickness of the mask body 71 in the case of 50μm or 200μm or less, the inclination angle theta _b to 52 ° over 65 ° or less. In the present invention, it is not necessary to increase the inclination angle theta _b since release holes 60 are a plurality, also it is possible to shorten the distance of the release holes and a mask.

The thickness of the mask body 71 is not less 50μm or 200μm or less, the inclination when the angle theta _b within 65 ° or less 52 ° or more, or less 40μm distance 20μm or more between the center of the through hole 72 and 76, discharge hole 60 and the mask 70 , 75, when the distance between them is 90 mm or more and 120 mm or less, the filling rate of the film on the bottom surface of the through holes 72 and 76 exceeded 95%, and the film thickness distribution in the pixel was good at ± 2%.

The diameter d at the tip of the discharge hole 60 of the present invention is so narrow that the distribution of the emitted steam becomes a candle flame shape. When the radiation angle of the steam from the center line of the discharge hole 60 is θ, the distribution of the steam radiated from the discharge hole 60 is represented by cos ⁿ θ, and the larger the n value, the sharper the flame shape of the steam. The average of the incident angles θ _i can be reduced.

  The smaller the diameter d of the discharge hole 60, the larger the n value, and the longer the length t of the discharge hole 60, the larger the n value. Therefore, when forming the organic thin film 8 with a fine pattern, the n value is increased. The aperture diameter d and the length t are set so that is 15 or more.

  If the vapor is deposited before being discharged from the discharge hole 60, the deposition efficiency is lowered. Therefore, the flow path of the vapor from the heating chamber 21 to the discharge hole 60 (the heating chamber 21, the pipe 49, the collection pipe 47, the connection pipe 48, the discharge device). 50) is heated by the heating means 25 to a temperature that is equal to or higher than the vapor deposition temperature and does not denature the organic material 39 (for example, 400 ° C.).

  When the emission device 50 is heated, the masks 70 and 75 and the substrate 7 are heated by the radiant heat from the emission device 50, and the masks 70 and 75 are distorted and the organic thin film 8 is deteriorated. A cooling member is disposed between the two.

Reference numeral 65 in FIG. 1 shows an example of the cooling member. The cooling member 65 has a cooling plate 66, and a plurality of through holes 67 are formed in the cooling plate 66 at the same interval (distance between the centers) as the discharge holes 60.
Each through hole 67 is wider than the discharge hole 60, and the cooling member 65 is arranged so that the through hole 67 is located immediately above the discharge hole 60, and the vapor is not blocked by the cooling plate 66, and the inside of the vacuum chamber 11. To be released.

In order to prevent the discharge device 50 from being cooled, the discharge device 50 and the cooling member 65 are separated from each other, or a heat insulating material is disposed between the discharge device 50 and the cooling member 65.
In order to avoid the vapor from coming into contact with the cooling plate 66, the tip of the discharge hole 60 is flush with the surface of the cooling member 65 on the mask 70, 75 side (the surface of the cooling plate 66), or more than the cooling member 65. It is desirable to protrude to the masks 70 and 75 side.

  Specifically, a through hole is formed in the ceiling of the discharge container 51, and a discharge cylinder 62 is provided on the discharge container 51 so that the through hole and the internal space communicate with each other in an airtight manner. The discharge hole 60 is constituted by the through-hole of the discharge container 51.

The through hole 67 of the cooling member 65 is made larger in diameter than the discharge cylinder 62. The end (front end) of the discharge cylinder 62 opposite to the discharge container 51 is inserted into the through hole 67 so as not to contact the cooling member 65, and the front end is connected to the mask 70, 75 side surface of the cooling member 65. Either flush with each other or protrude toward the masks 70 and 75.
Although the structure of the cooling member 65 is not particularly limited, cooling efficiency can be improved by drawing a pipe around the cooling plate 66 or on the surface of the cooling plate 66 and flowing a cooling medium such as water into the pipe.

The material of the masks 70 and 75 is not particularly limited as long as they are excellent in rigidity, heat resistance, and workability, but there are Invar (cobalt nickel alloy), SUS, and the like.
By polishing the surface (second surface 79) of the masks 70 and 75 on the emission device 50 side to increase the reflectance, the radiant heat is reflected, and the surface of the cooling plate 66 on the masks 70 and 75 side is black. If it is colored, the radiant heat that has flowed toward the masks 70 and 75 is absorbed, so that it is difficult for the masks 70 and 75 to rise in temperature.

The arrangement of the substrate 7 and the masks 70 and 75 is not particularly limited. However, in order to improve the film formation accuracy, the substrate 7 and the masks 70 and 75 are parallel to each other, and the distance between the substrate 7 and the masks 70 and 75 is 2 μm or less. .
As long as the discharge device 50 faces the masks 70 and 75, the installation location is not particularly limited. As shown in FIG. 1, the substrate 7 and the masks 70 and 75 may be disposed on the discharge container 51 with the surface (ceiling) of the discharge container 51 on which the discharge holes 60 are disposed facing upward. The substrate 7 and the mask 70 may be disposed below the discharge container 51 with the ceiling of 51 facing downward. Furthermore, the discharge container 51 may be erected and the ceiling may be directed to the side.

In addition, at least a part where the discharge hole is arranged in the discharge device 50 may be positioned inside the vacuum chamber 11, and a part thereof may be positioned outside the vacuum chamber.
The internal space of the discharge container 51 may not be divided. However, if the internal space is wide, uneven distribution of the vapor occurs, and the amount of vapor discharged from the discharge holes 60 becomes non-uniform. It is desirable to classify.

  The sizes of the substrate 7 and the masks 70 and 75 are not particularly limited. For example, the substrate 7 is a rectangle having a planar shape of 730 mm in length and 920 mm in width. Moreover, it is desirable that the region where the discharge hole 60 of the discharge device 50 is disposed is wider than the region of the substrate 7 where the organic thin film 8 is to be formed.

  DESCRIPTION OF SYMBOLS 1 ... Film-forming device 7 ... Substrate 8 ... Organic thin film 11 ... Evaporation device 20 ... Evaporation source 39 ... Organic material 50 ... Emission device 60 ... Emission hole 70, 75 ... Mask 71 ... Mask Main body 72, 76 …… Through hole

Claims (6)

A vacuum chamber in which a substrate to be deposited is placed;
An evaporation source for generating vapor of a vapor deposition material to be deposited on the substrate;
A discharge device to which the vapor generated in the evaporation source is supplied;
At least a part of the discharge device is located inside the vacuum chamber, and a plurality of discharge holes are spaced apart from each other on a surface located inside the vacuum chamber of the discharge device,
A mask is disposed between the emitting portion and the substrate,
The vapor supplied to the discharge device is discharged from the discharge hole into the vacuum chamber, and the vapor that has passed through the through-hole of the mask reaches the substrate to form a thin film. And
The mask has a plate-like mask body having a thickness of 50 μm or more and 200 μm or less, and a plurality of through holes formed in the mask body,
The mask is arranged with the front side facing the substrate and the back side facing the emitting part,
A film forming apparatus in which an inner wall surface of each through-hole is formed with an inclined portion that forms an acute angle with the surface of the mask body on the substrate side and an obtuse angle with the surface of the mask body on the emission portion side. The planar shape of the through hole is a polygon,
The film forming apparatus according to claim 1, wherein the inclined portion is formed on all sides of the through hole. The planar shape of the through hole is elongated,
The film forming apparatus according to claim 1, wherein the inclined portion is formed on a long side of the through hole.   4. The film forming apparatus according to claim 1, wherein an angle formed between the inclined portion and a perpendicular perpendicular to the surface of the mask main body is 52 ° or more and 65 ° or less. Supply the organic material generated in the evaporation source to the discharge device,
The steam is discharged into the vacuum chamber from a plurality of discharge holes provided in the discharge device,
Between the substrate inside the vacuum chamber and the discharge device, a mask in which a plurality of through holes are formed in a plate-shaped mask body is disposed,
It is a film forming method for forming an organic thin film by causing the vapor passing through the through hole to reach the substrate,
The thickness of the mask body is 50 μm or more and 200 μm or less, and the inner wall surface of the through-hole forms an acute angle with the first surface which is one side of the mask body, and the surface opposite to the first surface of the mask body The mask in which the inclined portion forming an obtuse angle with the second surface is formed,
The film-forming method which arrange | positions so that said 1st surface may face the said board | substrate, and said 2nd surface may face the said discharge | release apparatus, and discharge | releases the said vapor | steam from the said discharge | release hole.   The film forming method according to claim 5, wherein an angle formed by the inclined portion and a perpendicular perpendicular to the first surface is 52 ° or more and 65 ° or less.

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