TWI570654B - Use the test data for quality control - Google Patents

Use the test data for quality control Download PDF

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TWI570654B
TWI570654B TW103101432A TW103101432A TWI570654B TW I570654 B TWI570654 B TW I570654B TW 103101432 A TW103101432 A TW 103101432A TW 103101432 A TW103101432 A TW 103101432A TW I570654 B TWI570654 B TW I570654B
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wafer
test
data
parameter
component
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TW103101432A
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TW201528189A (en
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Kun-Zhong Chen
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Signality System Engineering Co Ltd
Kun-Zhong Chen
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Priority to CN201410288603.6A priority patent/CN104778525A/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/30Computing systems specially adapted for manufacturing

Description

利用測試數據進行品管方法 Using test data for quality control methods

本發明係有關一種品管方法,尤指一種利用測試數據進行品管方法。 The invention relates to a quality control method, in particular to a quality control method using test data.

如第11圖所示,為習知晶圓之品管方法,主要係晶圓領貨且準備好晶圓測試的安排(CP-setup)後,便開始進行晶圓測試(circuit probing,CP),主要係將晶圓分成複數被測元件(device under test,DUT)且各別測試。經過晶圓測試後,將不合格的被測元件上墨(inking),經烘烤(baking)後將測試完成之晶圓經由晶圓測試整貨站進行整貨,再經過對即將出貨的物品之品質控管(out-going quality control,OQC)後送至庫房直至出貨。 As shown in Fig. 11, the quality control method of the conventional wafer is mainly based on the wafer pick-up and preparation of the wafer test arrangement (CP-setup), and then the circuit probing (CP) is started. The wafer is divided into a plurality of device under test (DUT) and tested separately. After the wafer test, the unqualified test component is inking, and after baking, the test wafer is processed through the wafer test whole goods station, and then the shipment is ready for shipment. After the item's out-going quality control (OQC) is sent to the warehouse until shipment.

然而,在晶圓測試的過程中,被測元件之良率除了被測元件之製程本身的問題外,也包含了其他的因素,例如測試機的問題,意即測試機台的探針未正確校正,或測試機台的程式並未以正確的測試參數為基礎,皆會影響被測元件之良率,惟上述晶圓測試之品管流程無法分析被測元件不合格的問題為製程本身或測試機台所致,便無法正確地解決被測元件不合格的問題,且合格被測元件的測試資料同樣無記錄可循,若最終產品有需要校正的話,便無法 提供校正之相關數據。 However, in the process of wafer testing, the yield of the component under test contains other factors besides the process of the component under test, such as the problem of the tester, which means that the probe of the test machine is not correct. The calibration, or the test machine's program is not based on the correct test parameters, which will affect the yield of the component under test. However, the quality control process of the wafer test cannot analyze the failure of the component under test. The test machine is not able to correctly solve the problem of the unqualified component under test, and the test data of the qualified test component is also unrecordable. If the final product needs to be corrected, it will not be able to Provide relevant data for calibration.

因此,如何解決上述習用晶圓之品管方法之問題者,即為本發明之主要重點所在。 Therefore, how to solve the problem of the above-mentioned conventional wafer quality control method is the main focus of the present invention.

本發明目的之一,在於解決上述的問題而提供一種利用測試數據進行品管方法,透過收集單元在晶圓進行晶圓測試後收集測試結果之數據,並將數據送往一測試數據分析站進行分析,以此數據製作各種收集資料的常態分佈圖,計算出差異數與標準差,作為品質管制監控手段或測試程式穩定度分析。 One of the objects of the present invention is to solve the above problems and provide a quality control method using test data, collecting data of test results after wafer testing by a collecting unit, and sending the data to a test data analysis station. Analysis, using this data to produce a normal distribution map of various collected data, calculate the difference number and standard deviation, as a quality control monitoring means or test program stability analysis.

本發明目的之二,在於解決上述的問題而提供一種利用測試數據進行品管方法,透過收集單元在晶圓進行晶圓測試後收集測試結果之數據,並將數據送往一測試數據分析站進行分析,以此數據可依客戶的需求重新調整被測元件分級的參數,此參數為相對值或其他的差異值而非絕對值,而可達到重新分級的效果。 The second object of the present invention is to solve the above problems and provide a quality control method using test data, and collect data of test results after performing wafer test on a wafer through a collecting unit, and send the data to a test data analysis station. Analysis, with this data can be re-adjusted according to the customer's needs parameters of the component under test, this parameter is the relative value or other difference value rather than the absolute value, but can achieve the effect of re-grading.

本發明目的之三,在於解決上述的問題而提供一種利用測試數據進行品管方法,透過收集單元在晶圓進行晶圓測試後收集測試結果之數據,並將數據送往一測試數據分析站進行分析,透過多片多批晶圓的透視分析,可觀察產品可靠度與穩定度,幫助製程與設計。 The third object of the present invention is to solve the above problems and provide a quality control method using test data, collecting data of test results after performing wafer test on a wafer through a collecting unit, and sending the data to a test data analysis station. Analysis, through the perspective analysis of multiple wafers, can observe product reliability and stability, and help process and design.

本發明目的之四,在於解決上述的問題而提供一種利用測試數據進行品管方法,透過以三維空間座標表現出常態分佈圖,而使數據能以三維空間呈現,藉此達到讓數據 之觀看者能一目瞭然之便利性。 The fourth object of the present invention is to solve the above problems and provide a quality control method using test data, and the data can be presented in a three-dimensional space by displaying a normal distribution map in a three-dimensional space coordinate, thereby achieving data. The viewer can see the convenience at a glance.

本發明目的之五,在於解決上述的問題而提供一種利用測試數據進行品管方法,透過收集單元在晶圓進行晶圓測試後收集測試結果之數據,並將數據送往一測試數據分析站進行分析,若爾後成品需大量的原始資料,可在雲端上公佈該數據。 The fifth object of the present invention is to solve the above problems and provide a quality control method using test data, collect data of test results after performing wafer test on a wafer through a collecting unit, and send the data to a test data analysis station. Analysis, if the finished product requires a large amount of original data, the data can be published in the cloud.

為達前述之目的,本發明係包括:晶圓被分為複數被測元件,各被測元件經晶圓測試電氣特性及效能時,以一收集單元在晶圓進行晶圓測試後收集晶圓之批號、晶圓之型號、被測元件在晶圓上的座標、被測元件號以及被測元件測試之參數與測試結果之數據,並送往一測試數據分析站進行分析,以此數據製作各種收集資料的常態分佈圖,計算出差異數與標準差,作為品質管制監控手段或測試程式穩定度分析。 For the purposes of the foregoing, the present invention includes: a wafer is divided into a plurality of components to be tested, and each of the components to be tested is tested for electrical characteristics and performance by a wafer, and the wafer is collected by a collection unit after wafer testing. The batch number, the model of the wafer, the coordinates of the component under test on the wafer, the component number to be tested, and the parameters of the test component and the test results are sent to a test data analysis station for analysis. The normal distribution map of various collected data is used to calculate the difference number and standard deviation, as a quality control monitoring method or test program stability analysis.

晶圓被分為複數被測元件,各被測元件經晶圓測試電氣特性及效能時,以一收集單元在晶圓進行晶圓測試後收集晶圓之批號、晶圓之型號、被測元件在晶圓上的座標、被測元件號以及被測元件測試之參數與測試結果之數據,並送往一測試數據分析站進行分析,以此分析可依客戶的需求重新調整被測元件分級的參數,此參數為相對值或其他的差異值而非絕對值,而可達到重新分級的效果。 The wafer is divided into a plurality of components to be tested. When the components to be tested are tested for electrical characteristics and performance by the wafer, the batch number of the wafer, the type of the wafer, and the component to be tested are collected after wafer testing by a collecting unit on the wafer. The coordinates of the coordinates on the wafer, the component number to be tested, and the parameters of the test component and the test results are sent to a test data analysis station for analysis, so that the analysis of the component under test can be re-adjusted according to the customer's needs. Parameter, which is a relative value or other difference value instead of an absolute value, and can achieve the effect of re-rating.

晶圓被分為複數被測元件,各被測元件經晶圓測試電氣特性及效能時,以一收集單元在晶圓進行晶圓測試後收集晶圓之批號、晶圓之型號、被測元件在晶圓上的座標、 被測元件號以及被測元件測試之參數與測試結果之數據,並送往一測試數據分析站進行分析,透過多片多批晶圓的透視分析,可觀察產品可靠度與穩定度,幫助製程與設計。 The wafer is divided into a plurality of components to be tested. When the components to be tested are tested for electrical characteristics and performance by the wafer, the batch number of the wafer, the type of the wafer, and the component to be tested are collected after wafer testing by a collecting unit on the wafer. Coordinates on the wafer, The measured component number and the parameters of the tested component and the test results are sent to a test data analysis station for analysis. Through the perspective analysis of multiple wafers, the reliability and stability of the product can be observed to help the process. And design.

其中,若爾後成品需大量的原始資料,可在雲端上公佈該數據。 Among them, if the finished product requires a large amount of original data, the data can be published in the cloud.

其中,該常態分佈圖係以三維空間座標呈現,包括代表第一參數之X座標軸、代表第二參數之Y座標軸以及代表第三參數之Z座標軸,該三維空間座標中複數座標點X、Y、Z形成立體化圖形之常態分佈圖。 Wherein, the normal distribution map is represented by a three-dimensional space coordinate, and includes an X coordinate axis representing a first parameter, a Y coordinate axis representing a second parameter, and a Z coordinate axis representing a third parameter, wherein the plurality of coordinate points X, Y, Z forms a normal distribution map of the three-dimensional figure.

本發明之上述及其他目的與優點,不難從下述所選用實施例之詳細說明與附圖中,獲得深入了解。 The above and other objects and advantages of the present invention will be readily understood from

當然,本發明在某些另件上,或另件之安排上容許有所不同,但所選用之實施例,則於本說明書中,予以詳細說明,並於附圖中展示其構造。 Of course, the invention may be varied on certain components, or in the arrangement of the components, but the selected embodiments are described in detail in the specification and their construction is shown in the drawings.

1‧‧‧晶圓 1‧‧‧ wafer

11‧‧‧被測元件 11‧‧‧Measured components

2‧‧‧收集單元 2‧‧‧Collection unit

3‧‧‧測試數據分析站 3‧‧‧Test data analysis station

4‧‧‧電腦 4‧‧‧ computer

5‧‧‧電腦 5‧‧‧ computer

6‧‧‧測試機主控制電腦 6‧‧‧Tester main control computer

7、8‧‧‧分類群組 7, 8‧‧ ‧ classification group

9‧‧‧內部網路 9‧‧‧Internal network

第1圖係本發明之品管方法所採用之晶圓構造圖。 Fig. 1 is a diagram showing the structure of a wafer used in the quality control method of the present invention.

第2圖係本發明之品管方法之流程圖。 Figure 2 is a flow chart of the quality control method of the present invention.

第3圖係本發明之品管方法用以測試數據之設備之示意圖。 Figure 3 is a schematic illustration of the apparatus for testing data of the quality control method of the present invention.

第4圖係本發明之晶圓為批量之數據時所繪製之一常態分佈圖。 Figure 4 is a diagram showing a normal distribution of the wafer of the present invention when it is a batch of data.

第5圖係本發明之晶圓為批量之數據時所繪製之另一常態分佈圖。 Figure 5 is another normal distribution diagram of the wafer of the present invention when it is a batch of data.

第6圖係本發明之晶圓為批量之數據時所繪製之又一常態分佈圖。 Figure 6 is a diagram showing another normal distribution of the wafer of the present invention when it is a batch of data.

第7圖係本發明之晶圓為批量之數據時所繪製之再一常態分佈圖。 Figure 7 is a diagram showing a further normal distribution of the wafer of the present invention when it is a batch of data.

第8圖係本發明之被測元件在電性測試時產生之頻率為參數的常態分佈圖。 Figure 8 is a normal distribution diagram of the frequency at which the device under test of the present invention is generated during electrical testing.

第9圖係本發明之被測元件在校正後電性測試時產生之頻率為參數的常態分佈圖。 Figure 9 is a normal distribution diagram of the frequency at which the device under test of the present invention is generated during the electrical test after calibration.

第10圖係本發明之被測元件在電性測試時產生之電流為參數的常態分佈圖。 Figure 10 is a normal distribution diagram of the current generated by the device under test in the electrical test as a parameter.

第11圖係習用晶圓之品管方法。 Figure 11 is a method of quality control of conventional wafers.

請參閱第1圖至第10圖,圖中所示者為本發明所選用之實施例,此僅供說明之用,在專利申請上並不受此種實施例之限制。 Referring to Figures 1 through 10, the embodiments shown in the figures are selected for use in the present invention and are for illustrative purposes only and are not limited by such embodiments.

本實施例提供一種利用測試數據進行品管方法,其係包括:如第1圖所示,係晶圓1(wafer)被分為複數被測元件11(device under test,DUT),各被測元件11經晶圓測試後,將不合格的被測元件11上墨(inking),經烘烤(baking)後將測試完成之晶圓1經由晶圓測試整貨站進行整貨,再經過對即將出貨的物品之品質控管(out-going quality control,OQC)後送至庫房直至出貨。 This embodiment provides a quality control method using test data, which includes: as shown in FIG. 1, a wafer 1 is divided into a plurality of device under test (DUT), each of which is tested. After the component 11 is tested by the wafer, the unqualified device under test 11 is inked, and after baking, the tested wafer 1 is processed through the wafer test whole goods station, and then The out-going quality control (OQC) of the items to be shipped is sent to the warehouse until shipment.

如第2圖所示,以一收集單元2(test result data collection)在晶圓1進行晶圓測試(circuit probing,CP)後收集晶圓1之批號(lot no)、型號(type no)、被測元件11在晶圓1上的座標(包含X座標及Y座標)、被測元件號、被測元件分級(binary)的結果以及被測元件測試之參數與測試結果之數據(data),並送往一測試數據分析站3(test data analysis station)進行分析。 As shown in Figure 2, a collection unit 2 (test result data Collection) After the wafer 1 is subjected to circuit probing (CP), the lot number of the wafer 1 (lot no), the type (type no), and the coordinates of the device under test 11 on the wafer 1 (including the X coordinate and The Y coordinate), the measured component number, the result of the binary measurement of the device under test, and the data of the test component test and the test result (data) are sent to a test data analysis station 3 (test data analysis station). analysis.

如第3圖所示,該收集單元1透過一電腦4執行,該測試數據分析站3透過一電腦5執行,並設有一測試機主控制電腦6連結二測試分類群組7、8,透過內部網路9的連結,達到測試之數據的傳輸。 As shown in FIG. 3, the collection unit 1 is executed by a computer 4, and the test data analysis station 3 is executed by a computer 5, and a test machine main control computer 6 is connected to the two test classification groups 7, 8 through the interior. The connection of the network 9 reaches the transmission of the test data.

為進一步說明本發明,於此以附件一至二輔助說明。請參閱附件一,係該測試數據分析站3透過電腦5執行之程式簡介,如附件一第1-13頁所示,為該程式執行測試數據分析時之視窗,如附件一第1頁可選擇過濾器路徑(Filter Dir)指定分析的條件,又如附件一第2頁並選擇分析資料路徑(Logfile Dir)指定被分析的資料,又如附件一第3頁再選擇分析後之結果輸出路徑(Output Dir),藉此可分析出如附件一第14至18頁之數據結果。 To further illustrate the invention, it is described with the aid of Annexes I through II. Please refer to Annex 1 for a brief description of the program executed by the test data analysis station 3 through the computer 5. As shown in page 1-13 of Annex 1, the window for performing test data analysis for the program can be selected as shown in page 1 of Annex 1. The filter path (Filter Dir) specifies the conditions of the analysis. For example, the second page of Annex I and select the analysis data path (Logfile Dir) to specify the data to be analyzed, and the output path of the result after analysis is selected on page 3 of Annex I ( Output Dir), which can be used to analyze the data results as shown in pages 14 to 18 of Annex 1.

附件一在指定過濾器路徑(Filter Dir)時,由附件一第4頁可見包含Testing Information Head、Probe card information、Bin Description Selection Filter、Dut Selection Filter以及Category Selection Filter等主選項,各主選項中進一步具有次選項可進行選擇,例如附件一第5頁所示,在Testing Information Head之主選項 中進一步包括CUSTON_NAME、CUSTOM_Lot_No、CUSTOM_Type_No……等次選項,又如附件一第7頁所示,在Bin Description Selection Filter之主選項中進一步包括Bin1、Bin2、Bin3……等次選項。因此,可藉由過濾器路徑(Filter Dir)中進行過濾條件的選擇,達到適合條件之數據產出。 When you specify the filter path (Filter Dir) in Annex 1, you can see the main options including Testing Information Head, Probe card information, Bin Description Selection Filter, Dut Selection Filter, and Category Selection Filter on page 4 of Attachment 1. Further options in each main option There are sub-options to choose from, such as the main option in Testing Information Head, as shown on page 5 of Attachment 1. It further includes CUSTON_NAME, CUSTOM_Lot_No, CUSTOM_Type_No, etc., and as shown in page 7 of Attachment 1, further options such as Bin1, Bin2, Bin3, etc. are included in the main option of Bin Description Selection Filter. Therefore, the filter conditions can be selected by the filter path (Filter Dir) to achieve the data output suitable for the condition.

承上,由附件一所示之程式所分析而得之數據,除了可如附件一第14至18頁由表單的方式呈現,亦可藉由圖形化軟體的輔助將數據以圖形呈現。 In addition, the data analyzed by the program shown in Annex I can be presented in the form of a form as shown in pages 14 to 18 of Annex 1. The data can also be represented graphically with the aid of graphical software.

如附件二所示,係前述數據利用microsoft excel進行列表後,透過其繪圖功能將數據圖形化,此附件二所示之圖形即單一晶圓之數據結果。 As shown in Annex 2, after the above data is listed by microsoft excel, the data is graphically represented by its drawing function. The figure shown in Annex 2 is the data result of a single wafer.

再如第4至9圖所示,為三維空間座標之常態分佈圖,可透過繪圖軟體進行計算而獲得,此述常態分佈圖於三維空間座標中包括代表第一參數之X座標軸、代表第二參數之Y座標軸以及代表第三參數之Z座標軸,該三維空間座標中複數座標點X、Y、Z形成立體化圖形之常態分佈圖,由於是三維座標之圖形化數據,故可透過旋轉其圖形,或對其圖形剖視,達到透視分析的效果,而可進一步瞭解批量之晶圓於數據所產生之結果。 As shown in Figures 4 to 9, the normal distribution map of the three-dimensional coordinates can be obtained by calculation of the drawing software. The normal distribution map includes the X coordinate axis representing the first parameter and represents the second in the three-dimensional coordinates. The Y coordinate axis of the parameter and the Z coordinate axis representing the third parameter, the plurality of coordinate points X, Y, and Z in the three-dimensional space coordinate form a normal distribution map of the three-dimensional figure, and since it is the graphical data of the three-dimensional coordinate, the graphic can be rotated , or the cross-section of the graph, to achieve the effect of perspective analysis, and can further understand the results of the batch of wafers in the data.

如第4至6圖所示,為晶圓為批量之數據時所繪製呈岥峰狀之常態分佈圖,圖中之數據以連續之線段繪製而成,其中X座標軸所代表之第一參數為電性測試時產生之頻率,Y座標軸所代表之第二參數為晶圓片數,而Z座標軸 所代表之第三參數為被測元件之數量。又如第7圖所示,亦為晶圓為批量之數據時所繪製呈岥峰狀之常態分佈圖,與第4至6圖所示之常態分佈圖主要之差異,在於此圖中之數據係以柱狀圖呈現,可藉此清楚的在X、Y、Z座標中呈現每一柱狀區段之數據的差異。 As shown in Figures 4 to 6, the normal distribution map is drawn in the form of a peak when the wafer is a batch of data. The data in the figure is drawn as a continuous line segment, wherein the first parameter represented by the X coordinate axis is The frequency generated during the electrical test, the second parameter represented by the Y coordinate axis is the number of wafers, and the Z coordinate axis The third parameter represented is the number of components to be tested. As shown in Fig. 7, it is also a normal distribution diagram in which the wafer is in the form of a batch of data, and the difference between the normal distribution diagrams shown in Figs. 4 to 6 is the data in this figure. It is presented in a histogram, by which the difference in data of each columnar segment is clearly presented in the X, Y, and Z coordinates.

又如第8圖所示,其係以單一晶圓1為測試對象,圖中可見晶圓1之各被測元件11皆被定義一座標點X、Y,且於此常態分佈圖中,該參數係以各被測元件11於電性測試時產生之頻率為例,而各該被測元件11於電性測試時產生之頻率的數據即為各座標點Z。由第8圖所示之常態分佈圖,可迅速且清楚的得知,測試之晶圓1的各被測元件11於電性測試時產生之頻率有高低落差,在製程中有校正之必要。又如第9圖所示之常態分佈圖,係經製程校正後,各該被測元件11於電性測試時產生之頻率的數據,亦可迅速且清楚的得知,測試之晶圓1的各被測元件11於電性測試時產生之頻率已相當接近。 As shown in FIG. 8 , the single wafer 1 is used as a test object. It can be seen that each of the measured components 11 of the wafer 1 is defined by a punctuation point X and Y, and in the normal distribution map, the parameter For example, the frequency generated by each of the devices under test 11 during the electrical test is taken as an example, and the data of the frequency generated by each of the devices under test 11 during the electrical test is the coordinate point Z. From the normal distribution diagram shown in FIG. 8, it can be quickly and clearly understood that the frequency of each of the tested components 11 of the tested wafer 1 during the electrical test has a high and low drop, and there is a need for correction in the process. Another example is the normal distribution map shown in FIG. 9 , after the process calibration, the data of the frequency generated by each of the tested components 11 during the electrical test can also be quickly and clearly known, and the test wafer 1 is The frequency at which each of the devices under test 11 is generated during the electrical test is quite close.

如第10圖所示,其同樣以單一晶圓為測試對象,圖中可見晶圓1之各被測元件11同樣皆被定義一座標點X、Y,且於此常態分佈圖中,該參數係以各被測元件於電性測試時產生之電流為例,而各該被測元件於電性測試時產生之電流的數據即為各座標點Z。 As shown in FIG. 10, it also uses a single wafer as a test object. It can be seen that each of the measured components 11 of the wafer 1 is also defined as a punctuation point X, Y, and in this normal distribution diagram, the parameter is Taking the current generated by each of the tested components during the electrical test as an example, the data of the current generated by each of the tested components during the electrical test is the coordinate point Z.

該參數除上述可為電性測試時產生之頻率或電性測試時產生之電流外,亦可為被測元件11之分級、通過測試、未通過測試或依不同測試探針分組之組別。 In addition to the above-mentioned frequency generated during the electrical test or the current generated during the electrical test, the parameter may also be the classification of the device under test 11, passing the test, failing the test or grouping according to different test probes.

前述第4至10圖之常態分佈圖中,可透過將被測元件11之分級設為參數,或依不同測試探針分組之組別設為參數,即可透過常態分佈圖顯示出單片或多批晶圓1上之被測元件11間之差異,例如同屬某一探針分組之組別的被測元件11間之差異,或分屬不同探針分組之組別的被測元件11間之差異;亦可透過常態分佈圖顯示單片或多批晶圓1上之被測元件11在統整分析後顯示之趨勢,例如同一規格之全部晶圓1之統整分析,或同一機台製作之全部晶圓1之統整分析,或一特定期間製作之全部晶圓1之統整分析。 In the normal distribution diagrams of the foregoing 4th to 10th, the gradation of the device under test 11 can be set as a parameter, or the group of different test probes can be set as a parameter, and the monolithic pattern can be displayed through the normal distribution map. The difference between the components 11 to be tested on the plurality of wafers 1, for example, the difference between the components 11 to be tested belonging to the group of probes, or the component to be tested 11 belonging to the group of different probes. The difference between the measured components 11 on a single or multiple batches of wafers 1 after a unified analysis, such as the overall analysis of all wafers 1 of the same specification, or the same machine A unified analysis of all wafers 1 produced by the station, or a unified analysis of all wafers 1 produced during a specific period.

藉由本發明之品管方法,達到以下之功效: By the quality control method of the present invention, the following effects are achieved:

1、收集單元所收集到的數據,以此數據製作各種收集資料的常態分佈圖,計算出差異數與標準差,作為品質管制監控手段或測試程式穩定度分析。 1. Collect the data collected by the unit, use this data to make a normal distribution map of various collected data, calculate the difference number and standard deviation, and use it as a quality control monitoring method or test program stability analysis.

2、收集單元所收集到的資料,可依客戶的需求重新調整被測元件11分級的參數,此參數為相對值或其他的差異值而非絕對值,而可達到重新分級的效果。 2. The data collected by the collection unit can be re-adjusted according to the customer's needs. The parameter is the relative value or other difference value instead of the absolute value, and the re-grading effect can be achieved.

3、收集單元所收集到的資料,可透過以三維空間座標表現出常態分佈圖,而使數據能以三維空間呈現,藉此達到讓數據之觀看者能一目瞭然之便利性。 3. The data collected by the collection unit can make the data appear in three-dimensional space by displaying the normal distribution map in three-dimensional coordinates, thereby achieving the convenience of the viewer of the data at a glance.

4、收集單元2所收集到的數據,若爾後成品需大量的原始資料,可在雲端上公佈該數據。 4. The data collected by the collection unit 2, if the finished product requires a large amount of original data, the data can be published in the cloud.

5、透過多片多批晶圓1的透視分析,可觀察產品可靠度與穩定度,幫助製程與設計。 5. Through the perspective analysis of multiple batches of wafers 1, the reliability and stability of the product can be observed to help process and design.

6、在複數被測元件11同時測試時,透過該數據之收集並比較複數被測元件11相互間之測試差異,可判斷被測元件11不合格的原因為測試機或測試治具的問題。 6. When the plurality of devices under test 11 are simultaneously tested, by collecting the data and comparing the test differences between the plurality of devices under test 11, the cause of the failure of the device under test 11 can be judged as a problem of the test machine or the test fixture.

以上所述實施例之揭示係用以說明本發明,並非用以限制本發明,故舉凡數值之變更或等效元件之置換仍應隸屬本發明之範疇。 The above description of the embodiments is intended to be illustrative of the invention and is not intended to limit the scope of the invention.

由以上詳細說明,可使熟知本項技藝者明瞭本發明的確可達成前述目的,實已符合專利法之規定,爰提出專利申請。 From the above detailed description, it will be apparent to those skilled in the art that the present invention can achieve the foregoing objects and is in accordance with the provisions of the Patent Law.

2‧‧‧收集單元 2‧‧‧Collection unit

3‧‧‧測試數據分析站 3‧‧‧Test data analysis station

Claims (6)

一種利用測試數據進行品管方法,係晶圓被分為複數被測元件,各被測元件經晶圓測試電氣特性及效能時,以一收集單元在晶圓進行晶圓測試後收集晶圓之批號、晶圓之型號、被測元件在晶圓上的座標、被測元件號以及被測元件測試之參數與測試結果之數據,並送往一測試數據分析站進行分析,以此數據製作各種收集資料的常態分佈圖,計算出差異數與標準差,作為品質管制監控手段或測試程式穩定度分析,該常態分佈圖係以三維空間座標呈現,包括代表第一參數之X座標軸、代表第二參數之Y座標軸以及代表第三參數之Z座標軸,該三維空間座標中複數座標點X、Y、Z形成立體化圖形之常態分佈圖。 A quality control method using test data, the wafer is divided into a plurality of measured components, and each tested component is subjected to wafer testing for electrical characteristics and performance, and a wafer is tested by a collecting unit on the wafer after wafer testing. The batch number, the model of the wafer, the coordinates of the component under test on the wafer, the component number to be tested, and the parameters of the test component and the test results are sent to a test data analysis station for analysis. Collecting the normal distribution map of the data, calculating the difference number and the standard deviation, as the quality control monitoring means or the test program stability analysis, the normal distribution map is presented in a three-dimensional space coordinate, including the X coordinate axis representing the first parameter, representing the second The Y coordinate axis of the parameter and the Z coordinate axis representing the third parameter, the plurality of coordinate points X, Y, and Z in the three-dimensional space coordinate form a normal distribution diagram of the three-dimensional figure. 一種利用測試數據進行品管方法,係晶圓被分為複數被測元件,各被測元件經晶圓測試電氣特性及效能時,以一收集單元在晶圓進行晶圓測試後收集晶圓之批號、晶圓之型號、被測元件在晶圓上的座標、被測元件號以及被測元件測試之參數與測試結果之數據,並送往一測試數據分析站進行分析,以此數據製作各種收集資料的常態分佈圖,且以此分析可依客戶的需求重新調整被測元件分級的參數,此參數為相對值或其他的差異值而非絕對值,而可達到重新分級的效果,該常態分佈圖係以三維空間座標呈現,包括代表第一參數之X座標軸、代表第二參數之Y座標軸以及 代表第三參數之Z座標軸,該三維空間座標中複數座標點X、Y、Z形成立體化圖形之常態分佈圖。 A quality control method using test data, the wafer is divided into a plurality of measured components, and each tested component is subjected to wafer testing for electrical characteristics and performance, and a wafer is tested by a collecting unit on the wafer after wafer testing. The batch number, the model of the wafer, the coordinates of the component under test on the wafer, the component number to be tested, and the parameters of the test component and the test results are sent to a test data analysis station for analysis. Collect the normal distribution map of the data, and use this analysis to re-adjust the parameters of the measured component grading according to the customer's needs. This parameter is a relative value or other difference value instead of an absolute value, and can achieve the effect of re-grading, the normal state The distribution map is presented in a three-dimensional space coordinate, including an X coordinate axis representing the first parameter, a Y coordinate axis representing the second parameter, and Representing the Z coordinate axis of the third parameter, the plurality of coordinate points X, Y, and Z in the three-dimensional space coordinate form a normal distribution map of the three-dimensional figure. 一種利用測試數據進行品管方法,係晶圓被分為複數被測元件,各被測元件經晶圓測試電氣特性及效能時,以一收集單元在晶圓進行晶圓測試後收集晶圓之批號、晶圓之型號、被測元件在晶圓上的座標、被測元件號以及被測元件測試之參數與測試結果之數據,並送往一測試數據分析站進行分析,以此數據製作各種收集資料的常態分佈圖,透過多片多批晶圓的透視分析,可觀察產品可靠度與穩定度,幫助製程與設計,該常態分佈圖係以三維空間座標呈現,包括代表第一參數之X座標軸、代表第二參數之Y座標軸以及代表第三參數之Z座標軸,該三維空間座標中複數座標點X、Y、Z形成立體化圖形之常態分佈圖。 A quality control method using test data, the wafer is divided into a plurality of measured components, and each tested component is subjected to wafer testing for electrical characteristics and performance, and a wafer is tested by a collecting unit on the wafer after wafer testing. The batch number, the model of the wafer, the coordinates of the component under test on the wafer, the component number to be tested, and the parameters of the test component and the test results are sent to a test data analysis station for analysis. Collecting the normal distribution map of the data, through the perspective analysis of multiple batches of wafers, the reliability and stability of the product can be observed to help the process and design. The normal distribution map is presented in three-dimensional coordinates, including the X representing the first parameter. The coordinate axis, the Y coordinate axis representing the second parameter, and the Z coordinate axis representing the third parameter, the plurality of coordinate points X, Y, and Z in the three-dimensional space coordinate form a normal distribution map of the three-dimensional figure. 依請求項1、2或3所述之利用測試數據進行品管方法,其中,若爾後成品需大量的原始資料,可在雲端上公佈該數據。 According to the request item 1, 2 or 3, the test data is used for the quality control method, wherein if the finished product requires a large amount of original data, the data can be published in the cloud. 依請求項1、2或3所述之利用測試數據進行品管方法,其中,該X、Y座標軸為橫座標,該Z座標軸為縱座標,以座標點X、Y定義各該被測元件於晶圓上的位置,且以座標點Z定義一特定之參數的數據,於三維空間座標中依該複數被測元件個別對應之座標點X、Y、Z產生三維柱狀之常態分佈圖。 The quality control method according to claim 1, 2 or 3, wherein the X, Y coordinate axis is an abscissa, the Z coordinate axis is an ordinate, and each of the measured components is defined by coordinate points X and Y. The position on the wafer, and the data of a specific parameter is defined by the coordinate point Z, and a three-dimensional column-like normal distribution map is generated in the three-dimensional space coordinate according to the coordinate points X, Y, and Z corresponding to the respective plurality of measured components. 依請求項5所述之利用測試數據進行品管方法,其中, 該參數為被測元件之分級、通過測試、未通過測試、依不同測試探針分組之組別、電性測試時產生之頻率或電性測試時產生之電流。 Applying the test data to the quality control method according to claim 5, wherein This parameter is the grading of the device under test, the pass test, the fail test, the group grouped by different test probes, the frequency generated during the electrical test, or the current generated during the electrical test.
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CN106503877A (en) * 2015-09-06 2017-03-15 中芯国际集成电路制造(上海)有限公司 Outsourcing wafer sort quality inspection system and its method for inspection
TWI560636B (en) * 2015-09-24 2016-12-01 King Yuan Electronics Co Ltd Chip ID code automatic checking system and its method
CN106557709B (en) * 2015-09-28 2019-05-17 京元电子股份有限公司 Chip identifier automatic inspection system and its method
CN106604312B (en) * 2016-11-10 2020-12-22 王蕴卓 Router test data visualization method and system
CN109408303A (en) * 2018-09-19 2019-03-01 Oppo(重庆)智能科技有限公司 Test data analysis method and Related product
CN111308301A (en) * 2019-12-05 2020-06-19 王东 Semiconductor performance testing method based on Internet of things
CN111983412B (en) * 2020-07-21 2021-12-31 深圳米飞泰克科技有限公司 Monitoring system, monitoring method, monitoring terminal and storage medium
CN113420842A (en) * 2021-08-23 2021-09-21 晶芯成(北京)科技有限公司 Wafer test data processing method
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CN115877165B (en) * 2023-03-09 2023-06-16 合肥晶合集成电路股份有限公司 WAT test equipment and control method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876894B1 (en) * 2003-11-05 2005-04-05 Taiwan Semiconductor Maufacturing Company, Ltd. Forecast test-out of probed fabrication by using dispatching simulation method
TW200931338A (en) * 2007-11-06 2009-07-16 Applied Materials Inc Manufacturing prediction server
US20100095158A1 (en) * 2008-10-14 2010-04-15 Amin Shah-Hosseini System and method for supply chain data mining and analysis

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102565653B (en) * 2010-12-29 2015-11-25 中芯国际集成电路制造(北京)有限公司 A kind of crystal round test approach

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6876894B1 (en) * 2003-11-05 2005-04-05 Taiwan Semiconductor Maufacturing Company, Ltd. Forecast test-out of probed fabrication by using dispatching simulation method
TW200931338A (en) * 2007-11-06 2009-07-16 Applied Materials Inc Manufacturing prediction server
US20100095158A1 (en) * 2008-10-14 2010-04-15 Amin Shah-Hosseini System and method for supply chain data mining and analysis

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