TWI565682B - 濺鍍靶及氧化物半導體膜以及其製備方法 - Google Patents

濺鍍靶及氧化物半導體膜以及其製備方法 Download PDF

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TWI565682B
TWI565682B TW104127228A TW104127228A TWI565682B TW I565682 B TWI565682 B TW I565682B TW 104127228 A TW104127228 A TW 104127228A TW 104127228 A TW104127228 A TW 104127228A TW I565682 B TWI565682 B TW I565682B
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sputtering
oxide semiconductor
semiconductor film
oxide
sintering
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TW104127228A
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TW201706230A (zh
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庄大明
趙明
曹明杰
郭力
張冷
魏要偉
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鴻海精密工業股份有限公司
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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Description

濺鍍靶及氧化物半導體膜以及其製備方法
本發明涉及一種濺鍍靶及氧化物半導體膜以及其製備方法。
隨著資訊技術的飛速發展，平板顯示技術正向著更高解析度、更快回應速度、更低能耗、全透明器件以及柔性顯示等目標發展，這也對有源驅動顯示(如AMLCD，Active Matrix Liquid Crystal Display)中TFT(thin film transistor)器件的性能提出更高要求。傳統的非晶矽TFT由於其遷移率較低(~0.5cm2V-1s-1)的特性不能滿足高解析度、大尺寸LCD的顯示要求，更限制其在AMOLED(Active Matrix Organic Light Emitting Diode)顯示中的應用。而低溫多晶矽TFT雖然遷移率較高，但是其生產成本過高，大面積均勻性較難保證，不適合應用於大面積、高分辨顯示器。相較於非晶矽TFT和低溫多晶矽TFT，基於非晶氧化物半導體InGaZnO4的薄膜電晶體(IGZO-TFT)以其透過率高、製備溫度低、工藝相容性好等諸多優點，能夠替代非晶矽TFT，並且有望用於透明顯示以及OLED顯示。
然而，IGZO-TFT器件遷移率在非晶矽TFT和低溫多晶矽TFT之間，若能進一步提高IGZO-TFT的器件遷移率，其優勢將更明顯。研究發現，二元氧化物氧化銦鋅(IZO)的遷移率遠大於三元氧化物 IGZO，但由於其載流子濃度過高，且在使用中易受光照及閘極電壓等影響導致性能參數發生變化，即穩定性差，因此不適合製備TFT器件。
有鑒於此，提供一遷移率較高且穩定性較好的氧化物半導體膜及其製備方法以及製備該氧化物半導體膜的濺鍍靶及其製備方法實為必要。
一種濺鍍靶，含有化合物In2CexZnO4+2x，且含有摻雜金屬元素M。
一種濺鍍靶的製備方法，由氧化銦(In2O3)、氧化鈰(CeO2)、氧化鋅(ZnO)及摻雜金屬(M)的氧化物均勻混合形成一混合體，該混合體中In：Ce：Zn的摩爾比為2：1：(0.5~2)；以及將該混合體在1250°C~1650℃進行燒結。
一種氧化物半導體膜，含有銦元素(In)、鈰元素(Ce)、鋅元素(Zn)、摻雜金屬元素(M)及氧元素(O)，該In：Ce：Zn的摩爾比為2：(0.5~2)：1，氧化物半導體膜為n型半導體，載流子濃度為1012cm-3~1020cm-3，載流子遷移率為5.0cm2V-1s-1~46.3cm2V-1s-1。
一種氧化物半導體膜的製備方法，包括使用一濺鍍靶，通過濺鍍法在基底上濺鍍形成氧化物膜的步驟，該濺鍍靶含有化合物In2CexZnO4+2x且含有摻雜金屬元素M，其中x=0.5~2。
相較於先前技術，氧化物半導體膜ICZO中鈰(Ce)元素的加入不僅能降低載流子濃度，同時還能保證高遷移率，從而具有較好的半導體性能，適合用於製備薄膜電晶體，用於平板顯示器或其他 電子設備中。
10‧‧‧薄膜電晶體
110‧‧‧絕緣基底
120‧‧‧閘極
130‧‧‧絕緣層
140‧‧‧半導體層
151‧‧‧源極
152‧‧‧漏極
圖1為本發明實施例薄膜電晶體的結構示意圖。
圖2為本發明實施例2-1氧化物半導體薄膜的XRD圖譜。
圖3為本發明實施例2-1氧化物半導體薄膜的掃描電鏡照片。
圖4為本發明實施例2-2氧化物半導體薄膜的掃描電鏡照片。
圖5為本發明實施例2-3氧化物半導體薄膜的掃描電鏡照片。
下面將結合附圖及具體實施例對本發明提供的氧化物半導體膜及其製備方法作進一步的詳細說明。
本發明實施例提供一種濺鍍靶，由氧化銦(In2O3)、氧化鈰(CeO2)、氧化鋅(ZnO)及摻雜金屬(M)的氧化物混合後燒結形成，該濺鍍靶中化合物In2CexZnO4+2x為主要成分，且含有摻雜金屬元素M，其中x=0.5~2。在該濺鍍靶中，該摻雜金屬元素M占總金屬元素(即In+Ce+Zn+M)的原子百分比為0.5%~1%。
優選地，該化合物In2CexZnO4+2x為晶態。該濺鍍靶中可以含有非晶態的In、Ce及Zn的氧化物，優選地，晶態In2CexZnO4+2x在該濺鍍靶中的含量為80%以上。
在一實施例中，該濺鍍靶僅含有由In2O3、CeO2、ZnO及摻雜金屬氧化物混合後燒結形成的物質及微量雜質，該雜質的含量優選為小於10ppm。
該摻雜金屬元素M具有較大的離子場強，電負性小，與氧的結合 能力強，不易形成氧空位缺陷。該摻雜金屬元素M具體可以為Hf、Mg、Zr、Y、Mo、Sc、Al、Ti及Eu中的一種或多種。
在一實施例中，該濺鍍靶由In2O3、CeO2、ZnO及摻雜金屬氧化物混合後燒結形成的燒結物經過機械加工成型得到。
該濺鍍靶的相對密度優選大於或等於90%，該相對密度=濺鍍靶實際密度：In2CexZnO4+2x理論密度×100%。
該濺鍍靶的體電阻優選為10-2Ω cm~10Ω cm。
該濺鍍靶表面的粗糙度優選小於或等於2微米，更優選為小於或等於0.5微米。
該濺鍍靶的平均抗彎強度優選為大於或等於50MPa，更優選為大於或等於55MPa。
本發明實施例提供一種濺鍍靶的製備方法，包括：將In2O3粉末、CeO2粉末、ZnO粉末及摻雜金屬氧化物粉末均勻混合形成一混合體，該混合體中In：Ce：Zn的摩爾比為2：(0.5~2)：1；以及將該混合體在1250℃~1650℃進行燒結。
在該混合體中，該摻雜金屬元素M占總金屬元素(即In+Ce+Zn+M)的原子百分比為0.5%~1%。
在該混合體中，該In2O3粉末、CeO2粉末、ZnO粉末及摻雜金屬氧化物粉末的粒徑優選為小於或等於10微米，更優選為0.5微米~2微米。
該In2O3粉末、CeO2粉末、ZnO粉末及摻雜金屬氧化物粉末的純度優選為3N(質量百分比99.9%)~5N(質量百分比99.999%)。
該In2O3粉末、CeO2粉末及ZnO粉末摩爾比例為In2O3：CeO2：ZnO=2：(1~4)：2。
該摻雜金屬氧化物粉末具體可以為HfO2、MgO、ZrO2、Y2O3、MoO3、Sc2O3、Al2O3、TiO2及Eu2O3中的一種或多種。該In2O3粉末、CeO2粉末、ZnO粉末及摻雜金屬氧化物粉末可以在空氣或保護氣體(如Ar氣或N2氣)中進行混合，該混合步驟可進一步包括：將該In2O3粉末、CeO2粉末、ZnO粉末及摻雜金屬氧化物粉末在液態介質中進行球磨；及將球磨後的混合物烘乾去除該液態介質。該液態介質為不與原料In2O3粉末、CeO2粉末、ZnO粉末及摻雜金屬氧化物粉末發生反應，且通過之後的烘乾步驟可以去除，不向混合物中引入其他雜質。該液態介質例如可以是水、乙醇及丙酮中的至少一種。
該球磨是在球磨機中進行，該液態介質與該原料In2O3粉末、CeO2粉末、ZnO粉末及摻雜金屬氧化物粉末置入該球磨機中。該球磨機的轉速優選為100rpm~600rpm。在球磨的過程中，一方面可以將該In2O3粉末、CeO2粉末、ZnO粉末及摻雜金屬氧化物粉末充分混合均勻，另一方面可以將粉末的粒徑細化，得到所需粒徑的原料粉末。該球磨時間以混合均勻並且原料粒度達到要求為准。
該烘乾的溫度優選為30℃~60℃，該烘乾步驟可以在空氣或保護氣體(如Ar氣或N2氣)中進行，優選為在高純(3N~5N)保護氣體中進行烘乾。
該燒結的步驟可以是將該混合體進行熱壓燒結(非等靜壓)、常壓燒結或熱等靜壓燒結。該熱壓燒結的壓力可以為30MPa~100MPa，燒結時間可以為1小時~24小時。該熱等靜壓燒結的壓力可以為100MPa~300MPa，燒結時間可以為1小時~40小時。該常壓燒結的燒結時間可以為1小時~40小時。
該燒結過程在保護氣體中進行，該保護氣體可以為Ar氣或N2氣，優選為純度為3N~5N的Ar氣或N2氣。
當燒結過程中同時施加壓力時，該混合體可以在燒結過程中成型，以形成預定形狀的濺鍍靶，適於後續濺鍍使用。具體可以是將該燒結體放入具有預定形狀的模具中進行熱壓燒結或等靜壓燒結。
當該燒結為常壓燒結時，該混合體可以在燒結前先進行成型，以形成預定形狀的濺鍍靶，適於後續濺鍍使用。具體可以是將該燒結體放入具有預定形狀的模具中進行壓制。該壓制所用的壓力可以為30MPa~300MPa。
另外，當採用任何燒結方式進行燒結前，均可對混合體進行預成型步驟，例如可以採用模具、澆鑄或注射等方式使混合體預成型，在預成型過程中可以在混合體中加入黏結劑和/或溶劑。該黏結劑和/或溶劑在後續的燒結步驟中可以被完全去除。
在燒結後得到具有預定形狀的燒結體後可以直接作為該濺鍍靶使用，也可以進一步進行加工成型、打磨等步驟。
在燒結過程中，原料In2O3粉末、CeO2粉末及ZnO粉末反應生成晶態In2CexZnO4+2x。該摻雜金屬氧化物粉末在該晶態In2CexZnO4+2x 中形成摻雜。
本發明實施例進一步提供一種氧化物半導體膜，包括體銦元素(In)、鈰元素(Ce)、鋅元素(Zn)、摻雜金屬元素(M)及氧元素(O)，該In：Ce：Zn的摩爾比為2：(0.5~2)：1，該摻雜金屬元素M占總金屬元素(即In+Ce+Zn+M)的原子百分比為0.5%~1%，氧化物半導體膜為n型半導體，載流子濃度為1012cm-3~1020cm-3，載流子遷移率為5.0cm2V-1s-1~46.3cm2V-1s-1。
該氧化物半導體膜優選為非晶質氧化物。在另一實施例中，該氧化物半導體膜中也可含有晶態In2CexZnO4+2x。
該摻雜金屬元素M具體可以為Hf、Mg、Zr、Y、Mo、Sc、Al、Ti及Eu中的一種或多種。
在一實施例中，該氧化物半導體膜除該In、Ce、Zn、摻雜金屬元素M、O元素外，僅含有微量雜質，該雜質的含量優選為小於10ppm。
該氧化物半導體膜的禁帶寬度優選為3.0eV~3.5eV。
該氧化物半導體膜的可見光透過率優選為60%~90%。
該氧化物半導體膜的厚度優選為50nm~1000nm。
該氧化物半導體膜的載流子濃度優選為1013cm-3~1015cm-3。
該氧化物半導體膜的載流子遷移率優選為12.3cm2V-1s-1~46.3cm2V-1s-1。
該氧化物半導體膜可以通過使用上述濺鍍靶，通過濺鍍法獲得。
本發明實施例進一步提供一種氧化物半導體膜的製備方法，包括使用上述濺鍍靶，通過濺鍍法在基底上濺鍍形成氧化物膜。
該濺鍍法可以為磁控濺鍍法，例如直流濺鍍法或交流濺鍍法(如中頻磁控濺鍍法或射頻磁控濺鍍法)，優選為中頻磁控濺鍍法或射頻磁控濺鍍法。該濺鍍的電流優選為0.1A~2.0A。該濺鍍的時間優選為1分鐘~120分鐘。
該濺鍍的溫度可以為常溫或高溫，優選小於或等於400℃。當採用高溫時，該製備方法可進一步包括在濺鍍前將該基底在真空中預熱的步驟，該預熱溫度例如可以為50℃~400℃。
該濺鍍法中使用的載氣可以為稀有氣體、稀有氣體與氧氣的混合氣或稀有氣體與氫氣的混合氣，該稀有氣體優選為Ar氣。該載氣優選為Ar氣與氧氣的混合氣。該氧氣的流量優選小於3sccm。載氣中各氣體的純度優選為3N~5N。
該濺鍍時濺鍍室內的壓力優選為0.1Pa~2.0Pa。
該基板的材料為絕緣材料且能夠耐受該氧化物半導體膜製備過程中的加熱溫度。當該氧化物半導體膜製備過程所用溫度較低，如採用常溫濺鍍，該基板的材料選擇範圍較寬。該基板的材料可以列舉為玻璃、矽或聚合物(如PI、PE、PET等)。
在進行濺鍍前，該製備方法可進一步包括對基底進行清潔的步驟，以去除基底表面的雜質。
在進行濺鍍前，該基底材料可以安裝在夾具上進行固定，該基底與該濺鍍靶可以相互平行，也可以呈一夾角，該夾角可以為20º~85º之間。該基底與該濺鍍靶之間的距離優選小於或等於8cm。
在進行濺鍍在該基底上形成氧化物膜後，該氧化物膜可直接作為氧化物半導體膜。在另一實施例中，該製備方法還可進一步包括將該氧化物膜退火的步驟。具體地，是在真空、氮氣或保護氣體(如Ar氣)中進行退火。該退火過程的本底真空優選為10-3Pa~10Pa。該退火溫度優選為100℃~400℃，升溫速率優選為1℃/min~20℃/min，退火時間優選為1小時~10小時。該退火過程可在一定程度上提高該氧化物膜的結晶度，從而對氧化物半導體膜產品的性能進行調整。
本發明實施例提供的氧化物半導體膜及其製備方法中，該n型氧化物半導體膜的載流子霍爾遷移率在5.0cm2V-1s-1~46.3cm2V-1s-1，載流子濃度在1012cm-3~1020cm-3，可以用於製備n型薄膜電晶體，用於平板顯示器或其他電子設備中。該Ce元素在該氧化物半導體膜中的含量不能太小或太大，當x<0.5，半導體氧化物膜的性質偏向IZO，容易導致膜的穩定性降低，應用到半導體元件在使用中易受光照及閘極電壓等影響使該半導體氧化物膜的參數發生變化；當x>2時，該半導體氧化物膜的遷移率下降，影響半導體元件性能。為了進一步減少氧化物半導體膜中氧空位的缺陷，引入摻雜金屬元素M，M有較大的離子場強，電負性小，與氧的結合能力強，不易形成氧空位缺陷，從而可以進一步提高以氧化物半導體膜製成的半導體元件，如TFT的穩定性，尤其是負閘極電壓光照穩定性。
本發明實施例還提供一種半導體元件，該半導體元件包括所述氧化物半導體膜。
請參閱圖1，本發明實施例還提供一種薄膜電晶體10，該薄膜電 晶體包括絕緣基底110、半導體層140、源極151、漏極152、閘極120及絕緣層130。該源極151與漏極152間隔設置，該半導體層140與該源極151和漏極152電連接，該閘極120通過該絕緣層130與該半導體層140、源極151及漏極152絕緣設置。該半導體層140為所述氧化物半導體膜。該薄膜電晶體10中除該氧化物半導體膜外的其他元件可根據先前技術設置及製備。圖1中的薄膜電晶體10為一頂閘結構，可以理解，該薄膜電晶體10也可以為底閘結構或其他薄膜電晶體結構。
實施例1：濺鍍靶及其製備方法
實施例1-1
使用不同的摻雜金屬氧化物製作2種濺鍍靶，具體為稱量純度為4N的209g In2O3粉末、260g CeO2粉末和61g ZnO粉末(三種氧化物摩爾比例為In2O3：CeO2：ZnO=1：2：1)，再稱取純度為4N的占總金屬元素的原子百分比的0.5%的摻雜金屬氧化物粉末，該摻雜金屬氧化物粉末分別為HfO2及ZrO2。將四種粉末放入球磨罐中混合。球磨介質選為無水乙醇，球磨轉速200rpm，球磨時間10h。球磨結束後在壓力為1atm、純度為5N的Ar氣保護下烘乾1h。烘乾後將粉末放入熱壓燒結爐中，在高純Ar氣氛圍中進行熱壓燒結，燒結壓力為50MPa，燒結溫度為1350℃，升溫速率為15ºC/min，燒結時間為5h。燒結結束後隨爐冷卻至室溫取樣。靶材相對密度>87%，體電阻0.70Ω cm~0.86Ω cm。將靶材用於中頻交流磁控濺鍍，起弧容易，濺鍍穩定。
實施例1-2
使用不同的摻雜金屬氧化物製作2種濺鍍靶，具體為稱量純度為4N的249g In2O3粉末、231g CeO2粉末和73g ZnO粉末(三種氧化物摩爾比例為In2O3：CeO2：ZnO=2：3：2)，再稱取純度為4N的占總金屬元素的原子百分比的0.5%的摻雜金屬氧化物粉末，該摻雜金屬氧化物粉末分別為HfO2及ZrO2。將四種粉末放入球磨罐中混合。球磨介質選為無水乙醇，球磨轉速為400rpm，球磨時間為20h。球磨結束後在壓力為1atm、純度為5N的Ar氣保護下烘乾1h。採用常壓燒結製備靶材，將粉末放入普通壓機中，壓力為75MPa，保壓時間為60min。脫模後放入燒結爐，在高純N2氣氛圍中進行燒結，燒結溫度為1450℃，升溫速率為10ºC/min，燒結時間為8h。燒結結束後隨爐冷卻至室溫取樣。靶材相對密度>85%，體電阻約為0.12Ω cm~0.34Ω cm。將靶材用於中頻交流磁控濺鍍，起弧容易，濺鍍穩定。
實施例1-3
使用不同的摻雜金屬氧化物製作2種濺鍍靶，具體為稱量純度為4N的209g In2O3粉末、260g CeO2粉末和61g ZnO粉末(三種氧化物摩爾比例為In2O3：CeO2：ZnO=1：2：1)，再稱取純度為4N的占總金屬元素的原子百分比的0.5%的摻雜金屬氧化物粉末，該摻雜金屬氧化物粉末分別為HfO2及ZrO2。將四種粉末放入球磨罐中混合。球磨介質選為無水乙醇，球磨轉速500rpm，球磨時間為10h。球磨結束後在壓力為1atm、純度為5N的N2氣保護下烘乾1h。將粉末進行包裹後，放入等靜壓機中，在高純Ar氣氛圍中進行燒結。燒結壓力為100MPa，燒結溫度為1450℃，升溫速率為10ºC/min，燒結時間為20h。燒結結束後隨爐冷卻至室溫取樣。 靶材相對密度>86%，體電阻約為0.65Ω cm~0.78Ω cm。將靶材用於中頻交流磁控濺鍍，起弧容易，濺鍍穩定。
實施例2：氧化物半導體膜
實施例2-1
選用市售普通鈉鈣玻璃作為基底，將基底洗淨並用N2吹幹後置入磁控濺鍍儀中。基底與靶材表面平行，距離8cm。靶材分別為實施例1-1的2種濺鍍靶。採用40sccm的Ar和0~2sccm的O2作為工作氣體，工作電流為1.0A，工作氣壓為0.7Pa，在室溫進行磁控濺鍍，濺鍍時間為28min，制得6種250nm厚的摻雜的ICZO薄膜，經過Hall測試測得該ICZO薄膜霍爾遷移率達13.5cm2V-1s-1~26.3cm2V-1s-1，載流子濃度在1013cm-3~1020cm-3。請參閱圖2，從XRD譜圖可以看到該摻雜的ICZO薄膜為無定形結構。該6種摻雜的ICZO薄膜載流子濃度及霍爾遷移率隨濺鍍使用的O2流量的變化資料如表1所示。ICZO薄膜掃描電鏡表面形貌如圖3所示。
實施例2-2
選用市售普通鈉鈣玻璃作為襯底，將基片洗淨並用N2吹幹後置入磁控濺鍍儀中。基底與靶材表面平行，距離8cm。靶材分別為實施例1-2的2種濺鍍靶，用40sccm的Ar和0~3sccm的O2作為工作氣體，基底預熱溫度為250℃，工作電流為1.0A，工作氣壓為0.7Pa，濺鍍時間為28min，制得6種250nm厚的摻雜的ICZO薄膜。經過Hall測試測得該摻雜的ICZO薄膜霍爾遷移率達18.7cm2V-1s-1~46.3cm2V-1s-1，載流子濃度在1015cm-3~1020cm-3。 該6種摻雜的ICZO薄膜載流子濃度及霍爾遷移率隨濺鍍使用的O2流量的變化資料如表1所示。ICZO薄膜掃描電鏡表面形貌如圖4所示。
實施例2-3
選用市售普通鈉鈣玻璃作為基底，將基片洗淨並用N2吹幹後置入磁控濺鍍儀中。基底與靶材表面平行，距離8cm。靶材分別為實施例1-3的2種濺鍍靶。採用40sccm的純Ar作為工作氣體，工作電流為1.0A，工作氣壓為0.7Pa，在室溫進行磁控濺鍍，濺鍍時間為28min，制得6種250nm厚的摻雜的ICZO薄膜，經過Hall測試測得該摻雜的ICZO薄膜霍爾遷移率達20.3cm2V-1s-1，載流子濃度為1020cm-3。將濺鍍態薄膜放入石英管式爐內退火，在1Pa真空下退火1h，退火溫度為150ºC到350ºC，可得載流子濃度在1014cm-3~1019cm-3，霍爾遷移率在15.5cm2V-1s-1~23.7cm2V-1s-1之間的ICZO薄膜，適合製備TFT器件。該6種摻雜的ICZO薄膜載流子濃度及霍爾遷移率隨退火溫度的變化資料如表1所示。IC7O薄膜掃描電鏡表面形貌如圖5所示。
表1 氧化物半導體膜測試資料
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制 本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。

Claims (18)

  1. 一種氧化物半導體膜，其改進在於，含有銦元素(In)、鈰元素(Ce)、鋅元素(Zn)、摻雜金屬元素(M)及氧元素(O)，該In：Ce：Zn的摩爾比為2：(0.5~2)：1，該摻雜金屬元素(M)用於減少氧化物半導體膜中氧空位的缺陷，且該摻雜金屬元素M占總金屬元素(即In+Ce+Zn+M)的原子百分比為0.5%~1%，氧化物半導體膜為n型半導體，載流子濃度為1012cm-3~1020cm-3，載流子遷移率為5.0cm2V-1s-1~46.3cm2V-1s-1。
  2. 如請求項1所述的氧化物半導體膜，其中，該氧化物半導體膜的材料為非晶態氧化物。
  3. 如請求項1所述的氧化物半導體膜，其中，該M為Hf、Mg、Zr、Y、Mo、Sc、Al、Ti及Eu中的一種或多種。
  4. 一種氧化物半導體膜的製備方法，其改進在於，包括使用一濺鍍靶，通過濺鍍法在基底上濺鍍形成氧化物膜的步驟，該濺鍍靶含有化合物In2CexZnO4+2x且含有摻雜金屬元素M，其中x=0.5~2，該摻雜金屬元素(M)用於減少氧化物半導體膜中氧空位的缺陷，且該摻雜金屬元素M占總金屬元素(即In+Ce+Zn+M)的原子百分比為0.5%~1%。
  5. 如請求項4所述的氧化物半導體膜的製備方法，其中，該濺鍍靶由氧化銦(In2O3)、氧化鈰(CeO2)及氧化鋅(ZnO)以及摻雜金屬元素的氧化物混合後燒結形成。
  6. 如請求項4所述的氧化物半導體膜的製備方法，其中，該濺鍍法為直流濺鍍法或交流濺鍍法，該交流濺鍍法為中頻磁控濺鍍法或射頻磁控濺鍍法。
  7. 如請求項4所述的氧化物半導體膜的製備方法，其中，該濺鍍的溫度為常 溫濺鍍。
  8. 如請求項4所述的氧化物半導體膜的製備方法，其中，進一步包括在濺鍍前將該基底在真空中預熱的步驟，該預熱溫度為50℃~400℃。
  9. 如請求項4所述的氧化物半導體膜的製備方法，其中，該濺鍍法中使用的載氣為稀有氣體、稀有氣體與氧氣的混合氣或稀有氣體與氫氣的混合氣。
  10. 如請求項4所述的氧化物半導體膜的製備方法，其中，進一步包括將該氧化物膜在真空、氮氣或Ar氣中退火的步驟，該退火溫度為100℃~400℃，升溫速率為1℃/min~20℃/min，退火時間為1小時~10小時。
  11. 一種濺鍍靶，其改進在於，含有化合物In2CexZnO4+2x，其中x=0.5~2，且含有摻雜金屬元素M，該摻雜金屬元素M用於減少化合物In2CexZnO4+2x中氧空位的缺陷，且該摻雜金屬元素M占總金屬元素的原子百分比為0.5%~1%。
  12. 如請求項11所述的濺鍍靶，其中，該M為Hf、Mg、Zr、Y、Mo、Sc、Al、Ti及Eu中的一種或多種。
  13. 一種濺鍍靶的製備方法，包括：將In2O3粉末、CeO2粉末、ZnO粉末及摻雜金屬氧化物粉末均勻混合形成一混合體，該混合體中In：Ce：Zn的摩爾比為2：1：(0.5~2)，摻雜金屬氧化物粉末用於減少濺鍍靶中氧空位的缺陷；以及將該混合體在1250℃~1650℃進行燒結。
  14. 如請求項13所述的濺鍍靶的製備方法，其中，該摻雜金屬氧化物粉末為HfO2、MgO、ZrO2、Y2O3、MoO3、Sc2O3、Al2O3、TiO2及Eu2O3中的一種或多種。
  15. 如請求項13所述的濺鍍靶的製備方法，其中，該燒結的步驟是將該混合體進行熱壓燒結、常壓燒結或熱等靜壓燒結。
  16. 如請求項15所述的濺鍍靶的製備方法，其中，該熱壓燒結的壓力為30MPa~100MPa，燒結時間可以為1小時~24小時；該熱等靜壓燒結的壓力為100MPa~300MPa，燒結時間為1小時~40小時。該常壓燒結的燒結時間為1小時~40小時。
  17. 如請求項13所述的濺鍍靶的製備方法，其中，該燒結過程在保護氣體中進行，該保護氣體為Ar氣或N2氣。
  18. 如請求項13所述的濺鍍靶的製備方法，其中，進一步包括將該混合體在燒結前先進行加壓成型，該壓力為30MPa~300MPa。
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