TWI565657B - Containers for silicon ingots - Google Patents

Description

矽Ingot manufacturing container

The present invention relates to a container for manufacturing an antimony ingot for use in the manufacture of a solar cell grade crucible.

In the past, as a method for producing a niobium ingot used in a solar cell or the like, the niobium melt is contained in a container made of graphite or quartz (such as a sorghum, a mold, or the like), and the crucible melt is solidified from below to allow the crucible to be solidified. The casting method of crystal growth is well known.

According to this casting method, since the direction in which crystal growth progresses can be made uniform when the crucible melt is solidified, it is possible to manufacture a good quality wafer in which the ratio resistivity of the grain boundary is suppressed. Moreover, if the casting method is used, mass production of the bismuth ingot can also be carried out.

Generally, a release material is formed on the inner surface of the container used for the casting method. In the case where the crucible is produced by the casting method, when the crucible melt is solidified in the container, once the crucible reacts with the container material, the crucible crystal is fixed to the container, and it becomes difficult to take out the ingot. Therefore, by forming a release material on the inner surface of the container, the ruthenium crystal is not directly in contact with the container. As such a release material, tantalum nitride (Si ₃ N ₄ ), cerium oxide (SiO ₂ ), or a mixture of these is generally used.

In the case where a release material composed of Si ₃ N ₄ or the like is formed on the inner surface of the container, a method of mixing a Si ₃ N ₄ powder with a binder such as polyvinyl alcohol is used. The body is coated on the inner surface of the container and then fired in an oxygen atmosphere.

Regarding this Si ₃ N ₄ , a well-known characteristic is sinterability (the solidification of a solid powder assembly when it is heated at a lower melting point, and becomes a dense object called a sintered body) It is low and is low in strength and fragile in the case where a sintering aid such as a metal impurity is not added. Therefore, the release material consisting of the sintered body of Si ₃ N ₄ formed on the inner surface of the container is damaged in the manufacturing process of the bismuth ingot (when the mash is held, the crystal grows, and is taken out from the container) High probability.

For example, the density of the cerium melt is 2.5 g/cm ³ , but since the solid density is 2.33 g/cm ³ , about 7% of the volume expands when the cerium melt is solidified in the vessel. When the volume expansion occurs as the crucible solidifies, the release material is damaged when the container is subjected to excessive stress.

Further, when the release material is damaged in the manufacturing process of a series of bismuth ingots, since the volume expansion stress remains on the generated ruthenium ingot, the crystal quality such as an increase in the transfer is lowered. Even if the ingot is not broken, the crystal quality cannot be prevented from being lowered.

Further, when the release material is damaged during the growth of the crystal, since the ruthenium crystal is brought into contact with the container and fixed, the detachment of the bismuth ingot is deteriorated, and the release material after the detachment is mixed into the bismuth ingot. , resulting in a decrease in crystallinity. Moreover, since the container cannot be reused, the manufacturing cost is increased.

Therefore, it has been desired to develop a container for manufacturing a bismuth ingot which has good mold release property and can prevent the damage of the release material in the manufacturing process of the bismuth ingot.

For example, Patent Documents 1 to 3 disclose a technique in which Si ₃ N ₄ , SiO ₂ , or a mixture of these materials is laminated to form a release material into a multilayer structure. Further, Patent Documents 4 and 5 disclose a technique of mixing a resin into a release material such as Si ₃ N ₄ . Further, Patent Documents 6 and 7 disclose a technique of forming a release material using aluminum nitride (AlN), cerium oxide (CeO ₂ ), and cerium oxide (Y ₂ O ₃ ) as a sintering aid. Thus, the technique of adding metal oxide and carbon in the mold release forming process is a method generally used for strongly curing the release material.

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2003-313023

[Patent Document 2] Japanese Patent Publication No. 2007-534590

[Patent Document 3] Japanese Laid-Open Patent Publication No. 2006-327912

[Patent Document 4] Japanese Patent Laid-Open Publication No. 2006-218537

[Patent Document 5] Japanese Patent Laid-Open Publication No. 2007-191345

[Patent Document 6] Japanese Patent Laid-Open Publication No. 2008-230932

[Patent Document 7] Japanese Patent Laid-Open No. Hei 7-206419

[Non-Patent Document 1] Journal of Crystal Growth 79 (1986), 583-589

However, in the case of forming a release material containing a metal oxide or carbon, cerium carbide (SiC) is generated in the release process of the release material slurry. Further, the generated SiC is mixed into the bismuth ingot and precipitated to the crystal grain boundary, which not only causes a decrease in the quality of the ingot, but also becomes a hindrance when the bismuth ingot is processed into a wafer.

Further, the metal oxide, carbon, and the like contained in the mold release slurry may cause deterioration of the container. For example, since the release material formed on the inner surface of the graphite container is easily peeled off into a film shape by carbonization (SiC formation), not only the mold release property is insufficient, but also the graphite container is consumed.

In addition, in order to increase the strength of the release material, cerium oxide as a sintering aid is generally added to the slurry (for example, Non-Patent Document 1). However, in the case of a graphite container, the graphite of the container material may be It reacts with cerium oxide, so it accelerates the above problems.

Further, when a release material is formed on the inner surface of a container made of quartz, the slurry is not subjected to the problem of deterioration of the release material and the container material in the slurry baking process, but the container is high in temperature at the time of crystal growth. Deterioration and deformation occur, and as a result, damage to the release material and the container cannot be effectively prevented.

Further, in the techniques described in Patent Documents 1 to 3, since the release material has a multilayer structure, it takes time and cost to form the release material. In the techniques described in Patent Documents 4 to 7, the release material is high in strength and is not easily damaged. However, impurities such as a resin or a metal contained in the release material are mixed into the crucible, and the crystal quality is lowered. For example, the metal oxide contained in the release material and the container functions as a catalyst for forming SiC in the process of forming the release material. The generated SiC becomes a molten liquid floating matter, and hinders single crystallization by crystal pulling of a Czochralski method or a Kyropoulos method.

The present invention has been made in order to solve the above problems, and an object of the invention is to provide a container for producing a ruthenium ingot which can be repeatedly used in the production of a polycrystalline ruthenium ingot.

The container for producing an antimony ingot according to the invention of the first aspect of the invention is a container for producing an ingot in which a crucible melt is solidified to grow polycrystalline crystals, and is characterized in that In the inner surface of the container body composed of a porous body formed of tantalum nitride or tantalum carbide and having an open porosity of 10% or more and 40% or less, a thickness of 300 to 1000 μm is formed by tantalum nitride. Mold material.

Here, the open porosity refers to the ratio of the volume of the pores communicating with the outside to the sum of the apparent volumes of the porous bodies.

The invention of claim 2, wherein the porous body has an open porosity of 20% or more and 30% or less.

The invention of claim 3, wherein the metal ingot of the container body composed of the porous body of the tantalum nitride (Fe, Al, Mn, Mg, Ca, Cu, Ti, Cr, Ni, W, V, Zn, and Zr) are each 1000 ppm or less.

The invention according to claim 3, wherein the metal ingot of the container body composed of the porous body of the niobium carbide (Fe, Al, Mn, Mg, Ca, Cu) Ti, Cr, Ni, W, V, Zn, and Zr) are each 10 ppm or less.

The invention recited in claim 5 is as claimed in any one of claims 1 to 3 The crucible ingot production container described above, wherein the metal impurities of the container body composed of the porous body of the niobium carbide (Fe, Al, Mn, Mg, Ca, Cu, Ti, Cr, Ni, W, V, Zn) Zr) is 100 ppm or less, and desirably 10 ppm or less.

The invention according to claim 5, wherein the metal ingot of the container body composed of the porous body of the niobium carbide (Fe, Al, Mn, Mg, Ca, Cu) Ti, Cr, Ni, W, V, Zn, and Zr) are each 10 ppm or less.

The invention according to any one of claims 1 to 6, wherein the release material has a thickness of 350 to 600 μm.

According to the present invention, since the release material having good mold release property is strongly formed on the inner surface of the container body, it is possible to effectively prevent the damage of the release material due to the stress caused by the volume expansion at the time of solidification of the crucible. produce. Therefore, it can be used repeatedly in the manufacture of the bismuth ingot, and the bismuth ingot having a good quality can be manufactured with good yield.

Hereinafter, embodiments of the present invention will be described in detail based on the drawings.

Fig. 1 is a cross-sectional view showing a container for manufacturing a bismuth ingot to which the present invention is applied. As shown in Fig. 1, a container for manufacturing an ingot (hereinafter referred to as a container) of the embodiment 10 includes: a container body 11 having heat resistance; and a release material 12 formed on the inner surface of the container body 11 in order to improve the release property of the produced ruthenium ingot.

The container body 11 is made of a porous body (porous material) of Si ₃ N ₄ or SiC. The thickness of the container body 11 is such that it does not cause warpage at the time of molding, for example, 5 mm or more.

The container body 11 is produced by, for example, sintering Si ₃ N ₄ or SiC powder, and has an open porosity of 10% or more and 40% or less. When the porosity of the porous body constituting the container body 11 is less than 10%, the air bubbles remain in the interior of the mold release material 12, and the mold release material 12 is weakened and easily broken. Moreover, when the open porosity exceeds 40%, the possibility of leakage of the molten liquid increases. Therefore, the porosity of the porous body constituting the container body 11 is preferably 10% or more and 40% or less.

The container body 11 made of a porous molded body of Si ₃ N ₄ or SiC is excellent in heat resistance as compared with a container made of quartz, and does not deteriorate or deform at the time of high temperature during the production of the bismuth ingot. Therefore, when the production of the bismuth ingot is performed, it is possible to effectively prevent the occurrence of damage of the release material 12 due to deterioration or deformation of the container body 11. Further, when the container body 11 is composed of a porous molded body of Si ₃ N ₄ , the metal impurities (Fe, Al, Mn, Mg, Ca, Cu, Ti, Cr, Ni, W, V, and Zn and Zr) are each 1000 ppm or less, and desirably 10 ppm or less. When the container body 11 is made of a porous SiC shaped body, the metal impurities (Fe, Al, Mn, Mg, Ca, Cu, Ti, Cr, Ni, W, V, Zn, and Zr) are each 100 ppm or less. It is desirable to be 10 ppm or less.

By reducing the metal oxide contained in the release material and the container, the amount of SiO gas generated can be reduced during the growth of the Si crystal, and the formation of SiC foreign matter in which the carbon contained in the release material and the container reacts with the SiO gas can be suppressed. As a result, since the SiC foreign matter does not float on the molten liquid surface, the single crystal formation by the crystal pulling of the Czochralski method or the Kyropoulos method becomes easy. Further, even when Si polycrystals are produced by a casting method or the like, since the SiC molten liquid surface floats can be prevented from being mixed into the crystals, the Si crystal quality is improved as a result.

The release material 12 is composed of a sintered body of Si ₃ N ₄ . The release material 12 is applied to the inner surface of the container body 11 by bristles, sprays, or the like by, for example, applying an aqueous slurry prepared by mixing a Si ₃ N ₄ powder with a binder such as polyvinyl alcohol, in an oxygen atmosphere or It is formed by firing at 700 to 1550 ° C in an inert gas atmosphere such as argon. The release material 12 has a thickness of 300 to 1000 μm. In the case where it is thinner than 300 μm, the volume expansion stress of Si is not sufficiently alleviated, and cracks are formed in the crystal. On the other hand, in the case of a thickness of 1000 μm, the release material is broken during the growth of the crystal to become a molten surface float, and it is easy to hinder the single crystal from the molten liquid surface. When the release material forming step, the desired thickness of the release material is 300 to 600 μm.

The slurry applied to the container body 11 is gradually formed toward the pores of the container body 11 because the container body 11 is made of a porous body. Further, the bubble body in the slurry is defoamed by the container body 11 made of a porous body. Since the firing is performed in this state, the release material 12 is strongly formed on the inner surface of the container body 11. Therefore, when the manufacture of the niobium ingot is performed, the mold release material 12 can be effectively prevented from being damaged.

When the air bubbles remain in the mold release material 12, the mold release material 12 tends to be easily broken when the ruthenium ingot is produced in accordance with the number and size of the remaining air bubbles. Therefore, in the conventional container body, When the release material is formed, a defoaming treatment by a reduced pressure or the like is performed. On the other hand, in the case of the container 10 of the present embodiment, when the release material 12 is formed, it is not necessary to perform the defoaming treatment, and the release material 12 can be easily formed.

Further, since the mold release material 12 is strongly formed on the inner surface of the container body 11, it is not necessary to have a multilayer structure as in the related art. Therefore, the process and cost incurred in the production of the container 10 are not increased, and the film thickness of the release material 12 can be easily increased.

Fig. 2 is a view showing an example of a crystal growth apparatus using a container according to an embodiment. The crystal growth apparatus 1 shown in Fig. 2 is used for producing a ruthenium ingot. In the crystal growth apparatus 1, the container 10 is supported by a graphite susceptor 13, and a heater 14 is disposed on the outer circumference of the susceptor 13.

In the case where the ruthenium ingot is produced by the casting method using the crystal growth apparatus 1, first, a predetermined amount of ruthenium raw material (for example, ruthenium melt) 15 is supplied to the vessel 10. Then, by gradually lowering the temperature, the crucible melt is solidified from the molten liquid surface of the container 10, and the crucible polycrystal 15a is grown to produce a crucible.

When the opening porosity of the container material is small, the release material is easily peeled off, and becomes a molten liquid float during crystal growth, which hinders single crystal formation from the Si molten liquid surface. In addition, when the opening porosity of the container material is too large, the thickness of the release material is 300 μm or less, and the volume expansion stress relief of the release material is insufficient, and cracks are confirmed on the ingot. Table 1 below shows the experimental results using Si ₃ N ₄ kansui.

[Example 1]

In the case where the opening porosity is 10%, the bubbles are left when the slurry is applied by the bristles, causing a large depression on the surface, and after the firing, most of the cracks originating from the depression are generated. Although the ingot can be taken out from the container, the R portion (the curved portion of the boundary between the bottom wall and the side wall) at the bottom of the container tends to have a large crack, and a crack is confirmed at the bottom of the Si ingot solidified from the molten liquid surface.

[Examples 2, 3]

In the case where the opening porosity was 20% and 30%, the bubbles did not remain after the slurry was applied with the bristles, and even if the film thickness was increased to 600 μm, no crack was observed. In the container in which the mold release material is formed, the ingot obtained by solidifying from the Si molten surface is in a smooth form without surface irregularities, cracks, and the like, and is easily taken out from the container.

[Example 4]

In the case of an open porosity of 40%, the impregnation of the release material slurry is large, Easy to thicken the release material. When the thickness of the release material was smaller than 300 μm, it was confirmed that irregularities were generated on the bottom surface of the ingot. Although the ingot can be taken out from the container, it is confirmed that the ingot is cracked in the R portion at the bottom of the container.

[Comparative Example 1]

When the open porosity was more than 40%, cracks were not observed in the release material, but it was difficult to increase the thickness. When solidified from the surface of the Si melt in the vessel, a melt leak occurs from the bottom. This is because the molten liquid in the lower portion of the crystal is compressed, causing the molten liquid to permeate into the pore portion.

[Comparative Example 2]

When the open porosity is less than 10%, the release material slurry is not easily wetted on the container material, and the groove after coating the slurry with the bristles is likely to remain, and the entire unevenness is caused by the foaming of the slurry. A crack is formed after firing. Since the release material is brittle due to the intense air bubbles, it is difficult to make the film thickness 400 μm or more. When Si is solidified from the molten surface in such a container, the container and one of the Si portions are tightened to cause the ingot to break.

As indicated above, the open porosity of the container material is related to the thickness of the release material and the presence or absence of cracks. The release range of the Si ingot may range from 10 to 40%, preferably from 20 to 30%.

[Example 5]

The crystal growth apparatus 1 of Fig. 1 is used for the top inner diameter: 68.2 mm, the lower inner diameter: 36 mm, the depth: 48 mm, and the thickness: 2 mm. And the inner surface of the SiC container body (opening porosity: 20%) 11 of all metal impurities (Na, Ca, Al, Cr, Cu, Fe, Ni, Ti, W, V, Zn, Zr) of 10 ppm or less, respectively. The container 10 having the release material 12 having a thickness of 350 to 600 μm is melted and then solidified from the surface of the melt.

Specifically, 100 g of the ruthenium raw material was placed in the container 10, and the temperature was raised to 1,550 ° C in an argon atmosphere at 1 atm to melt the ruthenium. Thereafter, the heater was cooled at 10 ° C/min.

[Examples 6, 7]

In Example 6, after the release material was formed on the inner surface of the SiC container of the same specification as in Example 5, it was baked at 1550 ° C for 12 hours under argon at 1 atm, and then, in the same manner as in Example 5, Melt solidification of the crucible.

In Example 7, the top inner diameter: 84.4 mm, the bottom inner diameter: 48 mm, the depth: 48 mm, the thickness: 10 mm, the metal impurities (Fe, Al, Mn, Mg, Ca, Cu, Ti, Cr, Ni, W) After the mold release material was formed on the inner surface of the Si ₃ N ₄ container having V, Zn, and Zr) of 10 to 1000 ppm, respectively, the melt solidification of the crucible was carried out in the same manner as in Example 5. These results are shown in Table 2.

In Examples 5, 6, and 7 using a container material having an open porosity of 20%, peeling of the release material was not confirmed. The obtained bismuth ingot is not fixed to the container 10, and the container 10 can be easily taken out only by turning it upside down.

When the surface of the crucible ingot and the inner surface of the container 10 after the production were observed, it was confirmed that the surface of the crucible ingot was extremely smooth, and there was no trace of damage of the release material 12 on the inner surface of the container 10. When the release material slurry is applied to the surface of the porous container, no bubbles are generated at all, so that a uniform, high-density, and strong release material is formed. Thereby, the volume of the crucible is expanded to slide along the release material 12, and almost no friction occurs at the interface between the release material 12 and the crucible, and therefore, the stress caused by the volume expansion at the time of solidification of the crucible can be effectively alleviated.

Moreover, since the mold release material 12 and the container main body 11 are not damaged, the container 10 can be reused, and it can be used repeatedly 10 times or more in manufacture of a bismuth ingot.

[Comparative Example 3]

In Comparative Example 3, a container of the same release material as that of the embodiment was formed on the inner surface of a container body made of quartz, and a crucible ingot was produced under the same manufacturing conditions as in the examples.

Compared with the bismuth ingot obtained in the examples, the bismuth ingot obtained in the comparative example had a large unevenness, particularly at the side and the bottom of the upper end of the ingot, and the deformation was remarkable, and crack cracking occurred on the ingot. Since the release material after peeling bites into the surface of the extracted bismuth ingot having irregularities, the release material is damaged due to the stress caused by the volume expansion during solidification of the crucible and the thermal deformation of the container at a high temperature, and Since a part of the bismuth ingot is fixed to the container, cracks are broken in the ingot. Further, SiC which generates a molten liquid floating matter during crystal growth is mixed into the bismuth ingot together with the release material which is peeled off during growth, and the crystal quality of the bismuth ingot is deteriorated.

[Comparative Example 4]

In Comparative Example 4, after forming a release material on the inner surface of the Si ₃ N ₄ container having a top inner diameter: 84.4 mm, a bottom inner diameter: 48 mm, a depth of 48 mm, and a thickness of 10 mm, 1550 ° C × 12 time was performed at 1 atm of argon. After the prebaking, the melt solidification was carried out in the same manner as in Example 5.

When the furnace was taken out of the vessel, it was found that the Si melt leaked from the bottom of the vessel. Although Si is diffused and diffused in the release material, it does not leak from the side. This should be because the Si is solidified from the surface of the molten metal, so that the molten liquid compressed at the bottom of the container passes through the porous material.

In the case of the SiC containers of Examples 5 and 6, although the molten liquid float was not generated during the crystal growth, in the case of Si ₃ N ₄ of Example 7, a large amount of SiC float was generated. When a large amount of SiC float is produced, a large amount of SiO is also attached to the furnace wall. SiO reacts with carbon remaining in the release material to produce SiC.

The results of comparing the metal impurity concentrations in the Si crystal are shown in Table 3 below.

As in Examples 5 and 6, when a Si ingot was produced in a low-metal impurity SiC (POCO) container manufactured by a non-sintering method using a conversion method, Si produced by a sintering method as in Example 7 _{When a} Si ingot is produced in a ₃ N ₄ container, metal impurities remaining in Si can be reduced. By pre-baking the container in which the release material is formed before the crystal growth process, metal impurities such as Fe, Al, Ca, Cu, Cr, etc. can be reduced. Moreover, in the case of the SiC container in which the metal impurity concentration was smaller, it was confirmed that SiC which does not generate a molten surface float was confirmed.

In Comparative Example 4, the difference in the weight of the container containing the release material before and after the pre-baking and the pre-baking time were found to be 0.2 Wt%/h. After the prebaking, a large amount of SiO is attached to the furnace. In the case of the SiC container of the low-metal impurity after the pre-baking under the same conditions (Example 6), the weight reduction and the large amount of SiO in the crystal growth were not confirmed. Therefore, there is a possibility that the Si ₃ N ₄ container body containing a large amount of SiO ₂ and a metal oxide and the adjacent Si ₃ N ₄ release material are thermally decomposed as SiO. That is, since the sinterability of the Si ₃ N ₄ particles of the release material covered with SiO ₂ was lowered in the prebaking, the melt leakage occurred in Comparative Example 4.

As described above, in the container 10 of the embodiment, the mold release material 12 made of Si ₃ N ₄ is formed on the inner surface of the container body 11 made of a porous body of Si ₃ N ₄ or SiC. Moreover, the porosity of the porous body constituting the container body 11 is 10% or more and 40% or less, and is desirably 20% or more and less than 40%.

In this container 10, since the release material 12 having a good mold release property is strongly formed on the inner surface of the container body 11, it is possible to effectively prevent the stress release material 12 from being damaged due to volume expansion accompanying solidification of the crucible. produce.

Moreover, by using the porous SiC of the low-metal impurity produced by the conversion method as a container material, it is possible to produce a metal impurity containing a very small amount compared to the conventional Si ₃ N ₄ container produced by the sintering method. Si ingots. Further, in the case of using the SiC container described above, the pre-baking is performed at a higher temperature than the Si ₃ N ₄ container, and the metal impurities in the Si ingot can be reduced. By using a container having a low metal impurity as a container for manufacturing an ingot, it is possible to suppress the incorporation of SiC foreign matter into the melt.

Therefore, it can be used repeatedly for the manufacture of a bismuth ingot, and it can manufacture the bismuth ingot of the favorable quality.

The invention developed by the inventors of the present invention has been specifically described above based on the embodiments. However, the present invention is not limited to the embodiments described above, and various modifications can be made without departing from the scope of the invention.

The container 10 of the embodiment can be used not only in the casting method but also in the manufacturing method of all the ingots in which the Si melt is held and solidified in the container. For example, the Kjeldahl growth method in which the cerium melt is solidified from the surface while the seed crystal is brought into contact with the surface of the cerium melt, and the cerium melt is allowed to grow. This is because it can suppress the crystallization from the seed crystal. The production of a single crystallized molten liquid float to be carried out can solve the stress release material caused by the volume expansion accompanying the solidification of the crucible by strongly forming the release material on the porous metal material of the low metal impurity. damage.

Further, the container body 11 is not only suitable for molding Si ₃ N ₄ or SiC into a shape of a kansui, but also a combination of a plurality of plate-like members in which Si ₃ N ₄ or SiC is formed into a plate shape as a mold.

The contents of the embodiments disclosed above are merely illustrative and are not intended to limit the invention. The scope of the present invention is not limited to the foregoing invention, but all modifications within the meaning and scope of the claims are intended to be included in the invention.

1‧‧‧ Crystal Growth Unit

10‧‧‧矽Ingot manufacturing container

11‧‧‧ container body

12‧‧‧Removable materials

13‧‧‧ susceptor

14‧‧‧heater

15‧‧‧矽 Raw materials (矽 melt)

15a‧‧‧More crystals

Fig. 1 is a cross-sectional view showing a container for manufacturing a ruthenium ingot to which the present invention is applied.

Fig. 2 is a view showing an example of a crystal growth apparatus using a container according to an embodiment.

10‧‧‧矽Ingot manufacturing container

11‧‧‧ container body

12‧‧‧Removable materials

Claims (7)

A container for producing a bismuth ingot, which is a container for producing a ruthenium ingot for solidifying ruthenium melt to grow polycrystalline ruthenium, characterized in that it is formed of tantalum nitride or tantalum carbide and has an open porosity of 10% or more. A mold release material composed of tantalum nitride and having a thickness of 300 to 1000 μm is formed on the inner surface of the container body made of a porous body of 40% or less. The container for producing an ingot in the first aspect of the invention, wherein the porous body has an open porosity of 20% or more and 30% or less. The container for producing an ingot according to the first aspect of the invention, wherein the metal body of the container body composed of the porous body of tantalum nitride is Fe (Al, Mn, Mg, Ca, Cu, Ti, Cr, Ni). , W, V, Zn, and Zr) are each 1000 ppm or less. The container for manufacturing an antimony ingot according to the third aspect of the invention, wherein the metal impurities of the container body composed of the porous body of the tantalum nitride (Fe, Al, Mn, Mg, Ca, Cu, Ti, Cr, Ni) , W, V, Zn, and Zr) are each 10 ppm or less. The container for producing an ingot in the first aspect of the invention, wherein the metal impurities (Fe, Al, Mn, Mg, Ca, Cu, Ti, Cr, Ni) of the container body composed of the porous body of the niobium carbide. , W, V, Zn, and Zr) are each 100 ppm or less. The container for producing an ingot according to the fifth aspect of the invention, wherein the metal impurities (Fe, Al, Mn, Mg, Ca, Cu, Ti, Cr, Ni) of the container body composed of the porous body of the niobium carbide. , W, V, Zn, and Zr) are each 10 ppm or less. The container for manufacturing an antimony ingot according to any one of claims 1 to 6, wherein the release material has a thickness of 350 to 600 μm.