TWI563799B - Tristate gate - Google Patents

Tristate gate

Info

Publication number
TWI563799B
TWI563799B TW101142094A TW101142094A TWI563799B TW I563799 B TWI563799 B TW I563799B TW 101142094 A TW101142094 A TW 101142094A TW 101142094 A TW101142094 A TW 101142094A TW I563799 B TWI563799 B TW I563799B
Authority
TW
Taiwan
Prior art keywords
tristate gate
tristate
gate
Prior art date
Application number
TW101142094A
Other languages
English (en)
Other versions
TW201334415A (zh
Inventor
Richard Ferrant
Original Assignee
Soitec Silicon On Insulator
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec Silicon On Insulator filed Critical Soitec Silicon On Insulator
Publication of TW201334415A publication Critical patent/TW201334415A/zh
Application granted granted Critical
Publication of TWI563799B publication Critical patent/TWI563799B/zh

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09425—Multistate logic
    • H03K19/09429—Multistate logic one of the states being the high impedance or floating state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0886—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/09403—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors
    • H03K19/0941—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using junction field-effect transistors of complementary type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW101142094A 2011-12-13 2012-11-12 Tristate gate TWI563799B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP11290575.7A EP2605407A1 (en) 2011-12-13 2011-12-13 Tristate gate

Publications (2)

Publication Number Publication Date
TW201334415A TW201334415A (zh) 2013-08-16
TWI563799B true TWI563799B (en) 2016-12-21

Family

ID=47358166

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101142094A TWI563799B (en) 2011-12-13 2012-11-12 Tristate gate

Country Status (6)

Country Link
US (1) US9479174B2 (zh)
EP (1) EP2605407A1 (zh)
KR (1) KR102071686B1 (zh)
CN (1) CN104040894B (zh)
TW (1) TWI563799B (zh)
WO (1) WO2013087612A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9762245B1 (en) * 2016-06-14 2017-09-12 Globalfoundries Inc. Semiconductor structure with back-gate switching
CN107222199A (zh) * 2017-04-18 2017-09-29 宁波大学 一种基于FinFET器件的三态反相器
US10367506B1 (en) 2018-12-07 2019-07-30 Sony Corporation Digital circuit based on a modified tristate circuit
WO2021084372A1 (ja) * 2019-11-01 2021-05-06 株式会社半導体エネルギー研究所 半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7532538B2 (en) * 2006-01-13 2009-05-12 Samsung Electronics Co., Ltd. Tri-state output driver arranging method and memory device using the same

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3321188B2 (ja) * 1991-07-26 2002-09-03 株式会社東芝 出力回路
JPH1168545A (ja) * 1997-08-19 1999-03-09 Toshiba Corp 半導体集積回路装置及びその制御方法
US6181166B1 (en) * 1998-06-19 2001-01-30 Intel Corporation Tristate driver for integrated circuit interconnects
US6184700B1 (en) * 1999-05-25 2001-02-06 Lucent Technologies, Inc. Fail safe buffer capable of operating with a mixed voltage core
JP2002000864A (ja) 2000-06-26 2002-01-08 Sankyo Kk 遊技機
US7683860B2 (en) * 2003-12-02 2010-03-23 Semiconductor Energy Laboratory Co., Ltd. Display device, driving method thereof, and element substrate
US20060166415A1 (en) * 2004-06-07 2006-07-27 Sharp Laboratories Of America, Inc. Two-transistor tri-state inverter
US7382162B2 (en) * 2005-07-14 2008-06-03 International Business Machines Corporation High-density logic techniques with reduced-stack multi-gate field effect transistors
US7298176B2 (en) * 2005-08-16 2007-11-20 International Business Machines Corporation Dual-gate dynamic logic circuit with pre-charge keeper
US7592841B2 (en) * 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
EP1961120A4 (en) * 2005-12-07 2008-12-31 Dsm Solutions Inc METHOD FOR MANUFACTURING AND OPERATING A SHOCK LAYER FIELD EFFECT TRANSISTOR FOR LOW POWER CONSUMPTION
FR2957449B1 (fr) * 2010-03-11 2022-07-15 S O I Tec Silicon On Insulator Tech Micro-amplificateur de lecture pour memoire
FR2958441B1 (fr) * 2010-04-02 2012-07-13 Soitec Silicon On Insulator Circuit pseudo-inverseur sur seoi
JP2011234604A (ja) * 2010-04-06 2011-11-17 Seiko Instruments Inc ステッピングモータ制御回路及びアナログ電子時計

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7532538B2 (en) * 2006-01-13 2009-05-12 Samsung Electronics Co., Ltd. Tri-state output driver arranging method and memory device using the same

Also Published As

Publication number Publication date
KR20140110874A (ko) 2014-09-17
US20140340118A1 (en) 2014-11-20
US9479174B2 (en) 2016-10-25
EP2605407A1 (en) 2013-06-19
KR102071686B1 (ko) 2020-01-30
TW201334415A (zh) 2013-08-16
CN104040894A (zh) 2014-09-10
WO2013087612A1 (en) 2013-06-20
CN104040894B (zh) 2019-04-23

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