TWI563533B - Ion implanter and system to control ion beam in the same - Google Patents

Ion implanter and system to control ion beam in the same

Info

Publication number
TWI563533B
TWI563533B TW103115811A TW103115811A TWI563533B TW I563533 B TWI563533 B TW I563533B TW 103115811 A TW103115811 A TW 103115811A TW 103115811 A TW103115811 A TW 103115811A TW I563533 B TWI563533 B TW I563533B
Authority
TW
Taiwan
Prior art keywords
same
ion
control
ion beam
implanter
Prior art date
Application number
TW103115811A
Other languages
English (en)
Chinese (zh)
Other versions
TW201503213A (zh
Inventor
Stanislav S Todorov
George M Gammel
Richard Allen Sprenkle
Norman E Hussey
Frank Sinclair
Shengwu Chang
Joseph C Olson
David Roger Timberlake
Kurt T Decker-Lucke
Original Assignee
Varian Semiconductor Equipment
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment filed Critical Varian Semiconductor Equipment
Publication of TW201503213A publication Critical patent/TW201503213A/zh
Application granted granted Critical
Publication of TWI563533B publication Critical patent/TWI563533B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535—Beam current
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24542—Beam profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Physical Vapour Deposition (AREA)
TW103115811A 2013-05-03 2014-05-02 Ion implanter and system to control ion beam in the same TWI563533B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201361819080P 2013-05-03 2013-05-03
US14/037,218 US9006692B2 (en) 2013-05-03 2013-09-25 Apparatus and techniques for controlling ion implantation uniformity

Publications (2)

Publication Number Publication Date
TW201503213A TW201503213A (zh) 2015-01-16
TWI563533B true TWI563533B (en) 2016-12-21

Family

ID=51626935

Family Applications (2)

Application Number Title Priority Date Filing Date
TW103115811A TWI563533B (en) 2013-05-03 2014-05-02 Ion implanter and system to control ion beam in the same
TW103115794A TWI564927B (zh) 2013-05-03 2014-05-02 離子植入機與用於控制其中離子束的系統

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW103115794A TWI564927B (zh) 2013-05-03 2014-05-02 離子植入機與用於控制其中離子束的系統

Country Status (6)

Country Link
US (2) US8853653B1 (cg-RX-API-DMAC7.html)
JP (2) JP6379182B2 (cg-RX-API-DMAC7.html)
KR (2) KR101677226B1 (cg-RX-API-DMAC7.html)
CN (2) CN105264634B (cg-RX-API-DMAC7.html)
TW (2) TWI563533B (cg-RX-API-DMAC7.html)
WO (2) WO2014179674A1 (cg-RX-API-DMAC7.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6517520B2 (ja) * 2015-01-27 2019-05-22 ラピスセミコンダクタ株式会社 監視装置、イオン注入装置、及び監視方法
US9396903B1 (en) * 2015-02-06 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Apparatus and method to control ion beam current
US9738968B2 (en) * 2015-04-23 2017-08-22 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controlling implant process
US20170005013A1 (en) 2015-06-30 2017-01-05 Varian Semiconductor Equipment Associates, Inc. Workpiece Processing Technique
US10395889B2 (en) * 2016-09-07 2019-08-27 Axcelis Technologies, Inc. In situ beam current monitoring and control in scanned ion implantation systems
US10431421B2 (en) * 2017-11-03 2019-10-01 Varian Semiconductor Equipment Associates, Inc Apparatus and techniques for beam mapping in ion beam system
US10651011B2 (en) * 2018-08-21 2020-05-12 Varian Semiconductor Equipment Associates, Inc. Apparatus and techniques for generating bunched ion beam
CN111830553B (zh) * 2019-04-16 2022-10-25 中芯国际集成电路制造(上海)有限公司 离子束均匀度检测装置及检测方法
JP7286420B2 (ja) * 2019-05-31 2023-06-05 株式会社アルバック イオン注入装置
US11264205B2 (en) * 2019-12-06 2022-03-01 Applied Materials, Inc. Techniques for determining and correcting for expected dose variation during implantation of photoresist-coated substrates
JP7106698B2 (ja) * 2020-04-07 2022-07-26 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド バンチ化されたイオンビームを生成するための装置及び技術
US20250323013A1 (en) * 2024-04-12 2025-10-16 Applied Materials, Inc. Detection of Space Charge Effect During Ion Implantation
CN120353191A (zh) * 2025-04-16 2025-07-22 深圳奉天实业有限公司 用于fib设备的离子束能量自适应调控方法及系统

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200527574A (en) * 2004-01-06 2005-08-16 Applied Materials Inc Ion beam monitoring arrangement
TW200802557A (en) * 2006-06-09 2008-01-01 Varian Semiconductor Equipment Ion beam current uniformity monitor, ion implanter and related method
US20080061250A1 (en) * 2006-03-14 2008-03-13 Axcelis Technologies, Inc. Ion beam monitoring in an ion implanter using an imaging device
US20080073550A1 (en) * 2006-06-29 2008-03-27 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for beam density measurement in two dimensions

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0492351A (ja) * 1990-08-07 1992-03-25 Tel Varian Ltd イオン注入装置
US6323497B1 (en) 2000-06-02 2001-11-27 Varian Semiconductor Equipment Assoc. Method and apparatus for controlling ion implantation during vacuum fluctuation
US7282721B2 (en) * 2001-08-30 2007-10-16 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for tuning ion implanters
US6908836B2 (en) 2002-09-23 2005-06-21 Applied Materials, Inc. Method of implanting a substrate and an ion implanter for performing the method
US6781141B2 (en) * 2002-10-29 2004-08-24 International Business Machines Corporation Method and structure for detection and measurement of electrical and mechanical resonance associated with an E-beam lithography tool
US7442944B2 (en) * 2004-10-07 2008-10-28 Varian Semiconductor Equipment Associates, Inc. Ion beam implant current, spot width and position tuning
US7550751B2 (en) * 2006-04-10 2009-06-23 Axcelis Technologies, Inc. Ion beam scanning control methods and systems for ion implantation uniformity
CN101467227A (zh) * 2006-06-09 2009-06-24 瓦里安半导体设备公司 离子束电流均匀度监控器、离子注入机以及其方法
US7755066B2 (en) 2008-03-28 2010-07-13 Varian Semiconductor Equipment Associates, Inc. Techniques for improved uniformity tuning in an ion implanter system
US8071964B2 (en) * 2008-05-01 2011-12-06 Axcelis Technologies, Inc. System and method of performing uniform dose implantation under adverse conditions
US8237135B2 (en) * 2009-01-22 2012-08-07 Axcelis Technologies, Inc. Enhanced low energy ion beam transport in ion implantation
JP2011086643A (ja) * 2009-10-13 2011-04-28 Panasonic Corp 不純物注入方法及びイオン注入装置
JP5373702B2 (ja) * 2010-06-07 2013-12-18 株式会社Ｓｅｎ イオンビームスキャン処理装置及びイオンビームスキャン処理方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200527574A (en) * 2004-01-06 2005-08-16 Applied Materials Inc Ion beam monitoring arrangement
US20080061250A1 (en) * 2006-03-14 2008-03-13 Axcelis Technologies, Inc. Ion beam monitoring in an ion implanter using an imaging device
TW200802557A (en) * 2006-06-09 2008-01-01 Varian Semiconductor Equipment Ion beam current uniformity monitor, ion implanter and related method
US20080073550A1 (en) * 2006-06-29 2008-03-27 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for beam density measurement in two dimensions

Also Published As

Publication number Publication date
KR20160005085A (ko) 2016-01-13
US9006692B2 (en) 2015-04-14
JP2016526254A (ja) 2016-09-01
CN105264634B (zh) 2017-03-22
KR101677226B1 (ko) 2016-11-29
KR101677225B1 (ko) 2016-11-17
CN105264634A (zh) 2016-01-20
JP2016526253A (ja) 2016-09-01
KR20160003258A (ko) 2016-01-08
TW201501168A (zh) 2015-01-01
TWI564927B (zh) 2017-01-01
WO2014179672A1 (en) 2014-11-06
US20140326179A1 (en) 2014-11-06
CN105264633A (zh) 2016-01-20
JP6379182B2 (ja) 2018-08-29
WO2014179674A1 (en) 2014-11-06
TW201503213A (zh) 2015-01-16
US8853653B1 (en) 2014-10-07
CN105264633B (zh) 2018-02-02

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