TWI562487B - - Google Patents

Info

Publication number
TWI562487B
TWI562487B TW103120015A TW103120015A TWI562487B TW I562487 B TWI562487 B TW I562487B TW 103120015 A TW103120015 A TW 103120015A TW 103120015 A TW103120015 A TW 103120015A TW I562487 B TWI562487 B TW I562487B
Authority
TW
Taiwan
Application number
TW103120015A
Other languages
Chinese (zh)
Other versions
TW201507303A (zh
Inventor
Keiji Iwata
Ippei Matsubara
Takayuki Kona
Hiroshi Watanabe
Tetsuro Toritsuka
Original Assignee
Murata Manufacturing Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Murata Manufacturing Co filed Critical Murata Manufacturing Co
Publication of TW201507303A publication Critical patent/TW201507303A/zh
Application granted granted Critical
Publication of TWI562487B publication Critical patent/TWI562487B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
TW103120015A 2013-07-24 2014-06-10 垂直諧振器型面發光雷射及其製造方法 TW201507303A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013153412 2013-07-24
PCT/JP2014/062679 WO2015011966A1 (fr) 2013-07-24 2014-05-13 Laser à cavité verticale émettant par la surface et son procédé de fabrication

Publications (2)

Publication Number Publication Date
TW201507303A TW201507303A (zh) 2015-02-16
TWI562487B true TWI562487B (fr) 2016-12-11

Family

ID=52393023

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103120015A TW201507303A (zh) 2013-07-24 2014-06-10 垂直諧振器型面發光雷射及其製造方法

Country Status (2)

Country Link
TW (1) TW201507303A (fr)
WO (1) WO2015011966A1 (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA3072760A1 (fr) 2017-08-14 2019-02-21 Trilumina Corp. Matrice vcsel compatible avec un montage en surface
EP3732757A4 (fr) * 2017-12-28 2021-10-13 Princeton Optronics, Inc. Sources de semi-conducteur à divergence de faisceau étroite
WO2021192672A1 (fr) * 2020-03-27 2021-09-30 ソニーセミコンダクタソリューションズ株式会社 Laser à émission de surface, réseau de lasers à émission de surface, appareil électronique et procédé de fabrication de laser à émission de surface

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228959A (ja) * 2005-02-17 2006-08-31 Sony Corp 面発光半導体レーザ
TW201234585A (en) * 2010-12-21 2012-08-16 Sumitomo Chemical Co Semiconductor substrate, method for manufacturing semiconductor substrate and vertical resonator surface light-emitting laser

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004146515A (ja) * 2002-10-23 2004-05-20 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP5272308B2 (ja) * 2004-09-21 2013-08-28 日本電気株式会社 電流狭窄構造および半導体レーザ
WO2009078232A1 (fr) * 2007-12-14 2009-06-25 Nec Corporation Laser à émission de lumière par la surface
JP5665504B2 (ja) * 2010-11-24 2015-02-04 キヤノン株式会社 垂直共振器型面発光レーザおよび垂直共振器型面発光レーザアレイ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006228959A (ja) * 2005-02-17 2006-08-31 Sony Corp 面発光半導体レーザ
TW201234585A (en) * 2010-12-21 2012-08-16 Sumitomo Chemical Co Semiconductor substrate, method for manufacturing semiconductor substrate and vertical resonator surface light-emitting laser

Also Published As

Publication number Publication date
WO2015011966A1 (fr) 2015-01-29
TW201507303A (zh) 2015-02-16

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