WO2009078232A1 - Laser à émission de lumière par la surface - Google Patents

Laser à émission de lumière par la surface Download PDF

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Publication number
WO2009078232A1
WO2009078232A1 PCT/JP2008/070456 JP2008070456W WO2009078232A1 WO 2009078232 A1 WO2009078232 A1 WO 2009078232A1 JP 2008070456 W JP2008070456 W JP 2008070456W WO 2009078232 A1 WO2009078232 A1 WO 2009078232A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
surface light
emitting laser
layer
section
Prior art date
Application number
PCT/JP2008/070456
Other languages
English (en)
Japanese (ja)
Inventor
Kimiyoshi Fukatsu
Masayoshi Tsuji
Naofumi Suzuki
Hiroshi Hatakeyama
Kenichiro Yashiki
Takeshi Akagawa
Takayoshi Anan
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Publication of WO2009078232A1 publication Critical patent/WO2009078232A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0261—Non-optical elements, e.g. laser driver components, heaters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention porte sur un laser à émission de lumière par la surface qui comporte une section de laser à émission de lumière par la surface présentant une couche active (104) formée entre une couche DBR de type n (102) et une couche DBR de type p (107); et une section de protection contre les décharges électrostatiques (ESD) (113) électriquement connectée en parallèle à la section de laser à émission de lumière par la surface. Une section de protection ESD (113) comporte des première et deuxième couches semi-conductrices (108, 112) contenant une impureté de premier type de conductivité; et une troisième couche semi-conductrice (110), qui est formée entre les première et deuxième couches semi-conductrices (108, 112), présente une bande interdite plus large que les bandes interdites de la première couche semi-conductrice et de la deuxième couche semi-conductrice, et présente une concentration en impureté de 1x1017 cm-3 ou moins.
PCT/JP2008/070456 2007-12-14 2008-11-11 Laser à émission de lumière par la surface WO2009078232A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007322947 2007-12-14
JP2007-322947 2007-12-14

Publications (1)

Publication Number Publication Date
WO2009078232A1 true WO2009078232A1 (fr) 2009-06-25

Family

ID=40795351

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070456 WO2009078232A1 (fr) 2007-12-14 2008-11-11 Laser à émission de lumière par la surface

Country Status (1)

Country Link
WO (1) WO2009078232A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015011966A1 (fr) * 2013-07-24 2015-01-29 株式会社村田製作所 Laser à cavité verticale émettant par la surface et son procédé de fabrication
JP2015099870A (ja) * 2013-11-20 2015-05-28 富士ゼロックス株式会社 面発光型半導体レーザ、面発光型半導体レーザアレイ、面発光型半導体レーザの製造方法、面発光型半導体レーザ装置、光伝送装置および情報処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103687A (ja) * 1983-11-11 1985-06-07 Hitachi Ltd 半導体レ−ザ素子
JP2004006548A (ja) * 2002-06-03 2004-01-08 Renesas Technology Corp 半導体レーザ素子及びその製造方法
JP2006066846A (ja) * 2004-07-29 2006-03-09 Seiko Epson Corp 面発光型装置及びその製造方法
JP2006229032A (ja) * 2005-02-18 2006-08-31 Seiko Epson Corp 光素子及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103687A (ja) * 1983-11-11 1985-06-07 Hitachi Ltd 半導体レ−ザ素子
JP2004006548A (ja) * 2002-06-03 2004-01-08 Renesas Technology Corp 半導体レーザ素子及びその製造方法
JP2006066846A (ja) * 2004-07-29 2006-03-09 Seiko Epson Corp 面発光型装置及びその製造方法
JP2006229032A (ja) * 2005-02-18 2006-08-31 Seiko Epson Corp 光素子及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015011966A1 (fr) * 2013-07-24 2015-01-29 株式会社村田製作所 Laser à cavité verticale émettant par la surface et son procédé de fabrication
JP2015099870A (ja) * 2013-11-20 2015-05-28 富士ゼロックス株式会社 面発光型半導体レーザ、面発光型半導体レーザアレイ、面発光型半導体レーザの製造方法、面発光型半導体レーザ装置、光伝送装置および情報処理装置

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