TWI562404B - Method of forming a light emitting diode structure and a light emitting diode structure - Google Patents

Method of forming a light emitting diode structure and a light emitting diode structure

Info

Publication number
TWI562404B
TWI562404B TW100117450A TW100117450A TWI562404B TW I562404 B TWI562404 B TW I562404B TW 100117450 A TW100117450 A TW 100117450A TW 100117450 A TW100117450 A TW 100117450A TW I562404 B TWI562404 B TW I562404B
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting diode
diode structure
forming
light
Prior art date
Application number
TW100117450A
Other languages
English (en)
Other versions
TW201214772A (en
Inventor
Tripathy Sudhiranjan
Vivian Kaixin Lin
Siew Lang Teo
Surani Bin Dolmanan
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Publication of TW201214772A publication Critical patent/TW201214772A/zh
Application granted granted Critical
Publication of TWI562404B publication Critical patent/TWI562404B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
TW100117450A 2010-05-18 2011-05-18 Method of forming a light emitting diode structure and a light emitting diode structure TWI562404B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/SG2010/000189 WO2011146015A1 (en) 2010-05-18 2010-05-18 Method of forming a light emitting diode structure and a light emitting diode structure

Publications (2)

Publication Number Publication Date
TW201214772A TW201214772A (en) 2012-04-01
TWI562404B true TWI562404B (en) 2016-12-11

Family

ID=44991925

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100117450A TWI562404B (en) 2010-05-18 2011-05-18 Method of forming a light emitting diode structure and a light emitting diode structure

Country Status (4)

Country Link
US (2) US9190560B2 (zh)
SG (1) SG185547A1 (zh)
TW (1) TWI562404B (zh)
WO (1) WO2011146015A1 (zh)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG182990A1 (en) 2007-07-03 2012-08-30 Microlink Devices Inc Thin film iii-v compound solar cell
SG185547A1 (en) 2010-05-18 2012-12-28 Agency Science Tech & Res Method of forming a light emitting diode structure and a light emitting diode structure
US20120037925A1 (en) * 2010-08-10 2012-02-16 Sheen Calvin W Engineered Substrate for Light Emitting Diodes
FR2967813B1 (fr) * 2010-11-18 2013-10-04 Soitec Silicon On Insulator Procédé de réalisation d'une structure a couche métallique enterrée
US9012939B2 (en) * 2011-08-02 2015-04-21 Kabushiki Kaisha Toshiba N-type gallium-nitride layer having multiple conductive intervening layers
CN105449053B (zh) * 2014-09-19 2018-04-03 展晶科技(深圳)有限公司 发光二极管晶粒及其制造方法
US10020418B2 (en) 2015-03-25 2018-07-10 International Business Machines Corporation Simplified process for vertical LED manufacturing
US10217914B2 (en) 2015-05-27 2019-02-26 Samsung Electronics Co., Ltd. Semiconductor light emitting device
US10297711B2 (en) * 2015-12-30 2019-05-21 Globalfoundries Singapore Pte. Ltd. Integrated LED and LED driver units and methods for fabricating the same
US9570295B1 (en) 2016-01-29 2017-02-14 International Business Machines Corporation Protective capping layer for spalled gallium nitride
WO2017155032A1 (ja) * 2016-03-11 2017-09-14 株式会社村田製作所 窒化ガリウム構造体、圧電素子、圧電素子の製造方法、及び圧電素子を用いた共振子
WO2018063391A1 (en) * 2016-09-30 2018-04-05 Intel Corporation High performance light emitting diode and monolithic multi-color pixel
US10565917B2 (en) * 2016-12-23 2020-02-18 Intel Corporation Monolithic micro LED display
JP6648685B2 (ja) * 2016-12-26 2020-02-14 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
CN107086173B (zh) * 2017-04-01 2019-10-25 天津三安光电有限公司 氮化物底层及其制备方法
KR20220031833A (ko) * 2020-09-04 2022-03-14 삼성디스플레이 주식회사 발광 소자 및 이를 포함하는 표시 장치
US12051771B2 (en) * 2020-10-30 2024-07-30 Nichia Corporation Light emitting device and method of manufacturing light emitting device

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531375B1 (en) * 2001-09-18 2003-03-11 International Business Machines Corporation Method of forming a body contact using BOX modification
US20050077537A1 (en) * 2003-10-08 2005-04-14 Samsung Electronics Co., Ltd. Nitride-based light emitting device and method of manufacturing the same
US20060043530A1 (en) * 2004-09-01 2006-03-02 International Business Machines Corporation Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation
US20080277285A1 (en) * 2007-05-08 2008-11-13 Interuniversitair Microelektronica Centrum Vzw (Imec) Bipolar electroless processing methods
US20100019268A1 (en) * 2006-04-27 2010-01-28 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Chip
US20100055818A1 (en) * 2008-08-29 2010-03-04 Ding-Yuan Chen Light-Emitting Diode on a Conductive Substrate

Family Cites Families (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3409958B2 (ja) 1995-12-15 2003-05-26 株式会社東芝 半導体発光素子
JP2743901B2 (ja) * 1996-01-12 1998-04-28 日本電気株式会社 窒化ガリウムの結晶成長方法
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
KR20010021496A (ko) 1997-07-03 2001-03-15 추후제출 에피택셜 필름의 결함 제거 방법
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
US6046465A (en) 1998-04-17 2000-04-04 Hewlett-Packard Company Buried reflectors for light emitters in epitaxial material and method for producing same
US6413839B1 (en) 1998-10-23 2002-07-02 Emcore Corporation Semiconductor device separation using a patterned laser projection
US6255198B1 (en) 1998-11-24 2001-07-03 North Carolina State University Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby
US6211095B1 (en) 1998-12-23 2001-04-03 Agilent Technologies, Inc. Method for relieving lattice mismatch stress in semiconductor devices
US6327288B1 (en) 1999-03-05 2001-12-04 Lumileds Lighting, U.S., Llc Buried heterostructure for lasers and light emitting diodes
US6521514B1 (en) 1999-11-17 2003-02-18 North Carolina State University Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates
US6335263B1 (en) 2000-03-22 2002-01-01 The Regents Of The University Of California Method of forming a low temperature metal bond for use in the transfer of bulk and thin film materials
US6596377B1 (en) 2000-03-27 2003-07-22 Science & Technology Corporation @ Unm Thin film product and method of forming
CN1292494C (zh) 2000-04-26 2006-12-27 奥斯兰姆奥普托半导体有限责任公司 发光半导体元件及其制造方法
FR2817395B1 (fr) 2000-11-27 2003-10-31 Soitec Silicon On Insulator Procede de fabrication d'un substrat notamment pour l'optique, l'electronique ou l'optoelectronique et substrat obtenu par ce procede
US6956250B2 (en) 2001-02-23 2005-10-18 Nitronex Corporation Gallium nitride materials including thermally conductive regions
US6611002B2 (en) 2001-02-23 2003-08-26 Nitronex Corporation Gallium nitride material devices and methods including backside vias
FR2834123B1 (fr) 2001-12-21 2005-02-04 Soitec Silicon On Insulator Procede de report de couches minces semi-conductrices et procede d'obtention d'une plaquette donneuse pour un tel procede de report
US7098589B2 (en) 2003-04-15 2006-08-29 Luminus Devices, Inc. Light emitting devices with high light collimation
US7074631B2 (en) 2003-04-15 2006-07-11 Luminus Devices, Inc. Light emitting device methods
US7083993B2 (en) 2003-04-15 2006-08-01 Luminus Devices, Inc. Methods of making multi-layer light emitting devices
US6831302B2 (en) * 2003-04-15 2004-12-14 Luminus Devices, Inc. Light emitting devices with improved extraction efficiency
DE60336543D1 (de) 2003-05-27 2011-05-12 Soitec Silicon On Insulator Verfahren zur Herstellung einer heteroepitaktischen Mikrostruktur
FR2855908B1 (fr) 2003-06-06 2005-08-26 Soitec Silicon On Insulator Procede d'obtention d'une structure comprenant au moins un substrat et une couche ultramince
ATE405947T1 (de) 2003-09-26 2008-09-15 Soitec Silicon On Insulator Verfahren zur herstellung vonn substraten für epitakitisches wachstum
US7250635B2 (en) * 2004-02-06 2007-07-31 Dicon Fiberoptics, Inc. Light emitting system with high extraction efficency
US7202141B2 (en) 2004-03-29 2007-04-10 J.P. Sercel Associates, Inc. Method of separating layers of material
FR2877491B1 (fr) 2004-10-29 2007-01-19 Soitec Silicon On Insulator Structure composite a forte dissipation thermique
US7247889B2 (en) 2004-12-03 2007-07-24 Nitronex Corporation III-nitride material structures including silicon substrates
US7195944B2 (en) 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
US7473936B2 (en) 2005-01-11 2009-01-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US7432119B2 (en) 2005-01-11 2008-10-07 Semileds Corporation Light emitting diode with conducting metal substrate
US7186580B2 (en) 2005-01-11 2007-03-06 Semileds Corporation Light emitting diodes (LEDs) with improved light extraction by roughening
US7413918B2 (en) 2005-01-11 2008-08-19 Semileds Corporation Method of making a light emitting diode
US7910937B2 (en) 2005-02-02 2011-03-22 Agency For Science, Technology And Research Method and structure for fabricating III-V nitride layers on silicon substrates
KR100593935B1 (ko) 2005-03-24 2006-06-30 삼성전기주식회사 발광 다이오드 패키지 및 그 제조 방법
KR100638730B1 (ko) 2005-04-14 2006-10-30 삼성전기주식회사 수직구조 3족 질화물 발광 소자의 제조 방법
US7365374B2 (en) 2005-05-03 2008-04-29 Nitronex Corporation Gallium nitride material structures including substrates and methods associated with the same
US7517742B2 (en) 2005-06-21 2009-04-14 Freescale Semiconductor, Inc. Area diode formation in SOI application
US7666696B2 (en) 2005-11-10 2010-02-23 Stc.Unm Process for controlling indium clustering in ingan leds using strain arrays
US20070278574A1 (en) 2006-05-30 2007-12-06 Sharp Laboratories Of America, Inc. Compound semiconductor-on-silicon wafer with a thermally soft insulator
KR101615255B1 (ko) 2006-09-20 2016-05-11 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 전사가능한 반도체 구조들, 디바이스들 및 디바이스 컴포넌트들을 만들기 위한 릴리스 방안들
US20080108224A1 (en) 2006-10-12 2008-05-08 Zhaoning Yu Patterning methods
JP2008141187A (ja) 2006-11-09 2008-06-19 Matsushita Electric Ind Co Ltd 窒化物半導体レーザ装置
US8278725B2 (en) * 2006-11-10 2012-10-02 Agency For Science, Technology And Research Micromechanical structure and a method of fabricating a micromechanical structure
US7935987B2 (en) 2006-11-28 2011-05-03 Azzuro Semiconductors Ag Epitaxial group III nitride layer on (001)-oriented group IV semiconductor
WO2008065373A1 (en) 2006-11-28 2008-06-05 Luxtaltek Corporation Pyramidal photonic crystal light emitting device
US20080171424A1 (en) 2007-01-16 2008-07-17 Sharp Laboratories Of America, Inc. Epitaxial growth of GaN and SiC on silicon using nanowires and nanosize nucleus methodologies
JP2008182110A (ja) 2007-01-25 2008-08-07 Matsushita Electric Ind Co Ltd 窒化物半導体発光装置
WO2008114099A1 (en) 2007-03-19 2008-09-25 S.O.I.Tec Silicon On Insulator Technologies Patterned thin soi
US20090032799A1 (en) 2007-06-12 2009-02-05 Siphoton, Inc Light emitting device
US20090050939A1 (en) 2007-07-17 2009-02-26 Briere Michael A Iii-nitride device
US7764852B2 (en) 2007-07-30 2010-07-27 Hewlett-Packard Development Company, L.P. Microresonantor systems and methods of fabricating the same
JP2009076694A (ja) 2007-09-20 2009-04-09 Panasonic Corp 窒化物半導体装置およびその製造方法
US8128749B2 (en) 2007-10-04 2012-03-06 International Business Machines Corporation Fabrication of SOI with gettering layer
US8217498B2 (en) 2007-10-18 2012-07-10 Corning Incorporated Gallium nitride semiconductor device on SOI and process for making same
US8159003B2 (en) 2007-11-26 2012-04-17 International Rectifier Corporation III-nitride wafer and devices formed in a III-nitride wafer
US7804119B2 (en) 2008-04-08 2010-09-28 International Business Machines Corporation Device structures with a hyper-abrupt P-N junction, methods of forming a hyper-abrupt P-N junction, and design structures for an integrated circuit
US20100012954A1 (en) 2008-07-21 2010-01-21 Chen-Hua Yu Vertical III-Nitride Light Emitting Diodes on Patterned Substrates with Embedded Bottom Electrodes
US20100035416A1 (en) * 2008-08-11 2010-02-11 Ding-Yuan Chen Forming III-Nitride Semiconductor Wafers Using Nano-Structures
KR100973278B1 (ko) 2008-09-05 2010-08-02 주식회사 하이닉스반도체 상변화 기억 소자 및 그의 제조방법
CN101673792B (zh) 2009-09-25 2011-09-21 厦门市三安光电科技有限公司 一种基于无掩模转移光子晶体结构的GaN基薄膜LED的制造方法
KR100974288B1 (ko) * 2010-01-13 2010-08-05 한국기계연구원 나노임프린트를 이용한 금속 산화박막 패턴 형성방법 및 이를 이용한 ｌｅｄ 소자의 제조방법
SG185547A1 (en) 2010-05-18 2012-12-28 Agency Science Tech & Res Method of forming a light emitting diode structure and a light emitting diode structure

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6531375B1 (en) * 2001-09-18 2003-03-11 International Business Machines Corporation Method of forming a body contact using BOX modification
US20050077537A1 (en) * 2003-10-08 2005-04-14 Samsung Electronics Co., Ltd. Nitride-based light emitting device and method of manufacturing the same
US20060043530A1 (en) * 2004-09-01 2006-03-02 International Business Machines Corporation Vertical bipolar transistor with a majority carrier accumulation layer as a subcollector for SOI BiCMOS with reduced buried oxide thickness for low-substrate bias operation
US20100019268A1 (en) * 2006-04-27 2010-01-28 Osram Opto Semiconductors Gmbh Optoelectronic Semiconductor Chip
US20080277285A1 (en) * 2007-05-08 2008-11-13 Interuniversitair Microelektronica Centrum Vzw (Imec) Bipolar electroless processing methods
US20100055818A1 (en) * 2008-08-29 2010-03-04 Ding-Yuan Chen Light-Emitting Diode on a Conductive Substrate

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Zamir et al,"Lateral confined epitaxy of GaN layers on Si substrates", Journal of Crystal Growth, Volume 230, Issues 3–4, September 2001, Pages 341–345 *

Also Published As

Publication number Publication date
WO2011146015A1 (en) 2011-11-24
US10186635B2 (en) 2019-01-22
US9190560B2 (en) 2015-11-17
US20160149084A1 (en) 2016-05-26
SG185547A1 (en) 2012-12-28
US20130193466A1 (en) 2013-08-01
TW201214772A (en) 2012-04-01

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