TWI562283B - Antifuse element using spacer breakdown - Google Patents

Antifuse element using spacer breakdown

Info

Publication number
TWI562283B
TWI562283B TW104104228A TW104104228A TWI562283B TW I562283 B TWI562283 B TW I562283B TW 104104228 A TW104104228 A TW 104104228A TW 104104228 A TW104104228 A TW 104104228A TW I562283 B TWI562283 B TW I562283B
Authority
TW
Taiwan
Prior art keywords
antifuse element
breakdown
spacer
spacer breakdown
antifuse
Prior art date
Application number
TW104104228A
Other languages
English (en)
Other versions
TW201601252A (zh
Inventor
Ting Chang
Chia-Hong Jan
Walid M Hafez
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of TW201601252A publication Critical patent/TW201601252A/zh
Application granted granted Critical
Publication of TWI562283B publication Critical patent/TWI562283B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H10B20/20—Programmable ROM [PROM] devices comprising field-effect components
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/143—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using laser-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G11C17/165—Memory cells which are electrically programmed to cause a change in resistance, e.g. to permit multiple resistance steps to be programmed rather than conduct to or from non-conduct change of fuses and antifuses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/62—Protection against overvoltage, e.g. fuses, shunts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/102—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components
    • H01L27/1021—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including bipolar components including diodes only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Memories (AREA)
TW104104228A 2014-03-24 2015-02-09 Antifuse element using spacer breakdown TWI562283B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/031592 WO2015147782A1 (en) 2014-03-24 2014-03-24 Antifuse element using spacer breakdown

Publications (2)

Publication Number Publication Date
TW201601252A TW201601252A (zh) 2016-01-01
TWI562283B true TWI562283B (en) 2016-12-11

Family

ID=54196108

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104104228A TWI562283B (en) 2014-03-24 2015-02-09 Antifuse element using spacer breakdown

Country Status (6)

Country Link
US (2) US9929090B2 (zh)
EP (1) EP3123509B1 (zh)
KR (1) KR102204054B1 (zh)
CN (2) CN109326581B (zh)
TW (1) TWI562283B (zh)
WO (1) WO2015147782A1 (zh)

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CN109326581B (zh) 2014-03-24 2023-01-10 太浩研究有限公司 使用间隔体击穿的反熔丝元件
JP6316725B2 (ja) * 2014-10-03 2018-04-25 ルネサスエレクトロニクス株式会社 半導体装置
US9929091B2 (en) * 2016-08-25 2018-03-27 International Business Machines Corporation Vertical fuse structures
FR3058567B1 (fr) * 2016-11-08 2019-01-25 Stmicroelectronics (Rousset) Sas Circuit integre comportant une structure antifusible, et procede de realisation
US10269444B2 (en) * 2016-12-21 2019-04-23 Sandisk Technologies Llc Memory with bit line short circuit detection and masking of groups of bad bit lines
CN109585450B (zh) * 2017-09-28 2020-11-03 中芯国际集成电路制造(上海)有限公司 存储器及其形成方法
US10290327B2 (en) * 2017-10-13 2019-05-14 Nantero, Inc. Devices and methods for accessing resistive change elements in resistive change element arrays
US20190229734A1 (en) * 2018-01-24 2019-07-25 Microsemi Soc Corp. Vertical resistor buffered multiplexer buskeeper
US10714180B2 (en) 2018-02-01 2020-07-14 Microsemi Soc Corp. Hybrid configuration memory cell
US11276697B2 (en) * 2018-04-02 2022-03-15 Intel Corporation Floating body metal-oxide-semiconductor field-effect-transistors (MOSFET) as antifuse elements
US11239149B2 (en) * 2018-04-02 2022-02-01 Intel Corporation Metal interconnect fuse memory arrays
US10910369B2 (en) * 2019-03-12 2021-02-02 International Business Machines Corporation On-chip security circuit
CN113496987B (zh) * 2020-04-08 2024-03-29 长鑫存储技术有限公司 反熔丝器件及反熔丝单元
CN113496989B (zh) * 2020-04-08 2024-02-09 长鑫存储技术有限公司 反熔丝单元及反熔丝阵列
CN116997965A (zh) 2021-03-08 2023-11-03 微芯片技术股份有限公司 选择性交叉耦合反相器以及相关设备、系统和方法
CN115623778A (zh) * 2021-07-14 2023-01-17 联华电子股份有限公司 一次性可编程存储单元及其制造方法
US20230064518A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Novel metal fuse structure by via landing

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US20100090213A1 (en) * 2006-07-04 2010-04-15 Samsung Electronics Co., Ltd. One-time programmable devices including chalcogenide material and electronic systems including the same
US20100327363A1 (en) * 2008-05-22 2010-12-30 Panasonic Corporation Semiconductor device and method for fabricating the same
US20130059238A1 (en) * 2004-05-06 2013-03-07 Sidense Corporation Reverse optical proximity correction method

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US20130059238A1 (en) * 2004-05-06 2013-03-07 Sidense Corporation Reverse optical proximity correction method
US20100090213A1 (en) * 2006-07-04 2010-04-15 Samsung Electronics Co., Ltd. One-time programmable devices including chalcogenide material and electronic systems including the same
US20080211540A1 (en) * 2007-02-28 2008-09-04 Shinobu Fujita Programmable anti-fuse based on, e.g., zncds memory devices for fpga and other applications
US20100327363A1 (en) * 2008-05-22 2010-12-30 Panasonic Corporation Semiconductor device and method for fabricating the same

Also Published As

Publication number Publication date
CN109326581A (zh) 2019-02-12
US20180218977A1 (en) 2018-08-02
US20160351498A1 (en) 2016-12-01
KR102204054B1 (ko) 2021-01-18
CN106030793B (zh) 2018-10-26
US10847456B2 (en) 2020-11-24
WO2015147782A1 (en) 2015-10-01
TW201601252A (zh) 2016-01-01
EP3123509A4 (en) 2017-11-22
EP3123509A1 (en) 2017-02-01
EP3123509B1 (en) 2021-06-23
KR20160136275A (ko) 2016-11-29
CN106030793A (zh) 2016-10-12
CN109326581B (zh) 2023-01-10
US9929090B2 (en) 2018-03-27

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