TWI560527B - Method of slimming radiation-sensitive material lines in lithographic applications - Google Patents

Method of slimming radiation-sensitive material lines in lithographic applications

Info

Publication number
TWI560527B
TWI560527B TW101111550A TW101111550A TWI560527B TW I560527 B TWI560527 B TW I560527B TW 101111550 A TW101111550 A TW 101111550A TW 101111550 A TW101111550 A TW 101111550A TW I560527 B TWI560527 B TW I560527B
Authority
TW
Taiwan
Prior art keywords
sensitive material
material lines
lithographic applications
slimming
radiation
Prior art date
Application number
TW101111550A
Other languages
English (en)
Other versions
TW201303520A (zh
Inventor
Michael A Carcasi
Mark H Somervell
Benjamin M Rathsack
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW201303520A publication Critical patent/TW201303520A/zh
Application granted granted Critical
Publication of TWI560527B publication Critical patent/TWI560527B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/2024—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure of the already developed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
TW101111550A 2011-03-31 2012-03-30 Method of slimming radiation-sensitive material lines in lithographic applications TWI560527B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/077,833 US8435728B2 (en) 2010-03-31 2011-03-31 Method of slimming radiation-sensitive material lines in lithographic applications

Publications (2)

Publication Number Publication Date
TW201303520A TW201303520A (zh) 2013-01-16
TWI560527B true TWI560527B (en) 2016-12-01

Family

ID=45929039

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101111550A TWI560527B (en) 2011-03-31 2012-03-30 Method of slimming radiation-sensitive material lines in lithographic applications

Country Status (6)

Country Link
US (1) US8435728B2 (zh)
JP (1) JP5944484B2 (zh)
KR (1) KR101938905B1 (zh)
CN (1) CN103547968B (zh)
TW (1) TWI560527B (zh)
WO (1) WO2012134910A1 (zh)

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US9176377B2 (en) 2010-06-01 2015-11-03 Inpria Corporation Patterned inorganic layers, radiation based patterning compositions and corresponding methods
US8980651B2 (en) 2011-09-30 2015-03-17 Tokyo Electron Limited Overlay measurement for a double patterning
US8647817B2 (en) 2012-01-03 2014-02-11 Tokyo Electron Limited Vapor treatment process for pattern smoothing and inline critical dimension slimming
US9086631B2 (en) 2012-08-27 2015-07-21 Tokyo Electron Limited EUV resist sensitivity reduction
US9147574B2 (en) 2013-03-14 2015-09-29 Tokyo Electron Limited Topography minimization of neutral layer overcoats in directed self-assembly applications
US8975009B2 (en) 2013-03-14 2015-03-10 Tokyo Electron Limited Track processing to remove organic films in directed self-assembly chemo-epitaxy applications
US9310684B2 (en) 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP2015082046A (ja) * 2013-10-23 2015-04-27 富士フイルム株式会社 パターン形成方法、電子デバイスの製造方法、及び、電子デバイス
EP3889159B1 (en) 2014-10-23 2024-06-05 Inpria Corporation Organometallic solution based high resolution patterning compositions
US9612536B2 (en) * 2015-08-31 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Developer for lithography
EP4089482A1 (en) 2015-10-13 2022-11-16 Inpria Corporation Organotin oxide hydroxide patterning compositions, precursors, and patterning
JP2017068281A (ja) * 2016-12-27 2017-04-06 Hoya株式会社 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
US11586113B2 (en) * 2018-06-15 2023-02-21 Mattson Technology, Inc Methods and apparatus for post exposure bake processing of a workpiece
TW202016279A (zh) 2018-10-17 2020-05-01 美商英培雅股份有限公司 圖案化有機金屬光阻及圖案化的方法
KR20210134072A (ko) * 2019-04-12 2021-11-08 인프리아 코포레이션 유기금속 포토레지스트 현상제 조성물 및 처리 방법
JP2023515693A (ja) 2020-03-02 2023-04-13 インプリア・コーポレイション 無機レジストパターニング用のプロセス環境
CN113845082B (zh) * 2021-09-08 2022-10-18 清华大学 辐射热流调控器件及其应用

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US7829269B1 (en) * 2009-04-27 2010-11-09 Tokyo Electron Limited Dual tone development with plural photo-acid generators in lithographic applications

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Also Published As

Publication number Publication date
WO2012134910A1 (en) 2012-10-04
CN103547968A (zh) 2014-01-29
TW201303520A (zh) 2013-01-16
US8435728B2 (en) 2013-05-07
KR20140031884A (ko) 2014-03-13
JP2014510954A (ja) 2014-05-01
KR101938905B1 (ko) 2019-01-15
CN103547968B (zh) 2016-03-23
US20110244403A1 (en) 2011-10-06
JP5944484B2 (ja) 2016-07-05

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