TWI557956B - Circuit board and method for manufacturing the same - Google Patents

Description

Circuit board and its making method

The present invention relates to a circuit board, and more particularly to a circuit board having a heat recovery function.

With the improvement of the performance of electronic computers, the power consumption of electronic computers has also increased, which has made the problem of waste heat accumulation of electronic computers more obvious. In order to ensure that the operation of the electronic computer can be smooth, the processor of the electronic computer is usually provided with a heat dissipation structure. The heat dissipation structure can drain the waste heat accumulated in the processor to avoid the occurrence of thermal crashes caused by waste heat accumulated in the processor.

Most of the heat dissipation structures commonly used today are heat sinks, in which the heat sink can discharge heat generated by the processor through heat convection. However, the heat sink can only eliminate the thermal energy generated by the processor, and can not properly handle the heat generated by the processor.

In view of this, the circuit board of the present invention has a heat storage element embedded in the substrate and a thermoelectric element to convert thermal energy generated by the processor into electrical energy, so that the waste heat generated by the processor can be effectively utilized. In addition, the heat storage elements in the board The component stores the thermal energy generated by the processor during operation. Therefore, even if the processor stops operating, the thermoelectric element can continue to convert the thermal energy stored in the heat storage element into electrical energy to provide electrical energy to other components that need to be operated. In other words, the circuit board of the present invention is a buried circuit board having a heat recovery function.

One embodiment of the present invention provides a circuit board including a substrate, a heat storage element, and a thermoelectric element. The heat storage element is buried in the substrate and connected to the processor for heat exchange with the processor. The thermoelectric element is embedded in the substrate and includes a first metal junction and a second metal junction. The first metal junction is connected to the heat storage element for heat exchange with the heat storage element. The second metal junction is bonded to the first metal junction, wherein the thermoelectric element generates an electromotive force by a temperature difference between the first metal junction and the second metal junction.

In some embodiments, the circuit board further includes a carrier. The carrier plate is disposed between the heat storage element and the processor, and includes a first through hole and a first heat conducting column. The first through hole penetrates the carrier. The first heat conducting column is disposed in the first through hole, wherein the heat storage element and the processor exchange heat through the first heat conducting column.

In some embodiments, the substrate further includes a first opening and a second opening. The first opening is disposed on the surface of the substrate, wherein the heat storage element is located within the first opening. The second opening is disposed on the other surface of the substrate and opposite to the first opening, wherein the carrier is located in the second opening. The first opening and the second opening are in communication with each other, and the width of the first opening is greater than the width of the second opening.

In some embodiments, the heat storage element further comprises a housing, a phase change material, and a connection pad. The phase change material is filled in the outer casing. The connection pad is disposed on the outer casing, wherein the first metal junction of the thermoelectric element is connected to the phase change material through the connection pad.

In some embodiments, the substrate further includes a first groove, a second groove, a second through hole, and a second heat conducting column. The first recess is disposed on a surface of the substrate, wherein the thermoelectric element is located in the first recess. The second groove is disposed on the other surface of the substrate, wherein the heat storage element is located in the second groove, the first groove and the second groove are opposite to each other, and at least a portion of the substrate is located between the heat storage element and the thermoelectric element. The second through hole is disposed on a portion of the substrate between the heat storage element and the thermoelectric element. The second heat conducting column is disposed in the second through hole, wherein the heat storage element and the thermoelectric element are heat exchanged through the second heat conducting column.

In some embodiments, the heat storage element further comprises a housing, a phase change material, a third through hole, and a third heat conducting column. The phase change material is filled in the outer casing. The third through hole penetrates the heat storage element. The third heat conducting column is disposed in the third through hole, wherein the processor exchanges heat with the first metal junction of the thermoelectric element through the third heat conducting column.

In some embodiments, the circuit board further includes a mounting bracket. The fixing frame is disposed in the second groove, and the heat storage element is located in the fixing frame. The heat storage element further includes a third recess, and the processor is located in the third recess. The surfaces of the substrate, the holder, the heat storage element and the processor are coplanar.

In some embodiments, the circuit board further includes a heat conducting unit. The heat conduction unit is disposed between the heat storage element and the processor or between the heat storage element and the thermoelectric element, wherein the heat conduction unit is composed of metal, graphene or a combination thereof.

One aspect of the present disclosure provides a method of fabricating a circuit board having a heat recovery function, comprising the following steps. Forming a first opening in the first build-up dielectric layer and placing a heat storage element into the first opening to embed the heat storage element in the first build-up dielectric layer. Providing a first layer on the first build-up dielectric layer and the heat storage element Pattern the metal layer. A second build-up dielectric layer is disposed on the first build-up dielectric layer and the first patterned metal layer, wherein the second build-up dielectric layer has a second opening, and the second opening is connected to the first opening. A carrier is disposed on the heat storage element and in the second opening, and a second patterned metal layer is disposed on the second build-up dielectric layer and the carrier. Forming a third opening in the second build-up dielectric layer or the first build-up dielectric layer, and disposing a thermoelectric element in the third opening to embed the thermoelectric element in the second build-up dielectric layer, wherein the thermoelectric element transmits The first patterned metal layer is connected to the heat storage element.

One embodiment of the present disclosure provides a method of fabricating a circuit board having a heat recovery function, comprising the following steps. At least one through hole is formed on the single dielectric layer, and a heat conducting column is disposed in the through hole. A single layer of dielectric layer is layered to form a substrate. Forming a first groove and a second groove respectively on opposite surfaces of the substrate, wherein the single dielectric layer is located between the first groove and the second groove. A thermoelectric element is disposed in the first recess to embed the thermoelectric element in the multilayer dielectric layer, wherein the thermoelectric element is coupled to the thermally conductive column. At least another through hole is formed in the heat storage element, and another heat conducting column is filled in the other through hole. A processor is disposed on the heat storage element, wherein the processor is coupled to another heat conducting column. A heat storage element and a processor are disposed in the second recess to embed the heat storage element in the substrate, wherein the heat storage element is located between the processor and the thermoelectric element.

100‧‧‧ boards

102‧‧‧Substrate

104‧‧‧First opening

106‧‧‧second opening

108‧‧‧ third opening

110‧‧‧first groove

112‧‧‧second groove

114‧‧‧ third groove

115‧‧‧First through hole

116‧‧‧Second through hole

117‧‧‧ third through hole

118‧‧‧Processor

120‧‧‧heat storage components

122‧‧‧Shell

124‧‧‧ phase change materials

126‧‧‧Connecting mat

130‧‧‧Thermal components

132‧‧‧First metal joint

134‧‧‧Second metal joint

140‧‧‧ Carrier Board

141‧‧‧First Thermal Conductive Column

142‧‧‧Second thermal column

143‧‧‧The third heat transfer column

144‧‧‧ fixed frame

146‧‧‧thermal unit

152‧‧‧First build-up dielectric layer

154‧‧‧Second layered dielectric layer

156‧‧‧First patterned metal layer

158‧‧‧Second patterned metal layer

160‧‧‧ Third patterned metal layer

162‧‧‧fourth patterned metal layer

164‧‧‧single dielectric layer

166‧‧‧ solder balls

168‧‧‧metal layer

S10~S60, S40'~S50', S110~S160‧‧‧ steps

1 is a side elevational view of a first embodiment of a circuit board in accordance with the present invention.

2A to 2F are diagrams respectively showing a circuit board manufacturing method according to the present invention A side view of the first embodiment at various stages.

Figure 3 is a side elevational view of a second embodiment of a circuit board in accordance with the present invention.

4A and 4B are respectively side views showing different stages of the second embodiment of the manufacturing method of the circuit board according to the present invention.

Figure 5 is a side elevational view of a third embodiment of a circuit board in accordance with the present invention.

6A to 6F are respectively side views showing different stages of a third embodiment of a method of fabricating a circuit board according to the present invention.

The embodiments are described in detail below with reference to the accompanying drawings, but the embodiments are not intended to limit the scope of the invention, and the description of structural operations is not intended to limit the order of execution thereof The structure, which produces equal devices, is within the scope of the present invention. In addition, the drawings are for illustrative purposes only and are not drawn to the original dimensions. For ease of understanding, the same elements in the following description will be denoted by the same reference numerals.

The terms "first", "second", etc., as used herein, are not intended to refer to the order or the order, and are not intended to limit the invention, only to distinguish the elements described in the same technical terms. Or just operate.

1 is a side elevational view of a first embodiment of a circuit board 100 in accordance with the present invention. The circuit board 100 includes a substrate 102, a heat storage element 120, and a thermoelectric element 130. The heat storage element 120 is buried in the substrate 102 and connected to the processor 118 for heat exchange with the processor 118. The thermoelectric element 130 is buried in the substrate 102, and includes a first metal junction 132 and a second metal junction 134. The first metal junction 132 is connected to the heat storage element 120 for heat exchange with the heat storage element 120. The second metal junction 134 is bonded to the first metal junction 132, wherein the thermoelectric element 130 generates an electromotive force by a temperature difference between the first metal junction 132 and the second metal junction 134.

In this embodiment, the processor 118 may be, for example, a central processing unit (CPU) or a graphics processing unit (GPU), wherein the processor 118 may be connected to the circuit board 100 through pins. When processor 118 performs an operation, the temperature of processor 118 will increase. When the temperature of the processor 118 is greater than the temperature of the heat storage element 120, there is a temperature difference between the processor 118 and the heat storage element 120 such that thermal energy generated by the processor 118 is transferred from the processor 118 to the heat storage element 120. When the heat storage element 120 absorbs thermal energy, the temperature of the heat storage element 120 will increase. Similarly, when the temperature of the heat storage element 120 is greater than the temperature of the first metal junction 132 of the thermoelectric element 130, the thermal energy of the heat storage element 120 is transferred from the heat storage element 120 to the first metal junction 132, and makes the first There is a temperature difference between the metal junction 132 and the second metal junction 134. Next, the thermoelectric element 130 generates electrical energy by the thermoelectric effect between the first metal junction 132 and the second metal junction 134 to provide external components (not shown) for use. For example, the thermoelectric element 130 can be connected to a battery (not shown) and used as one of the power supply sources for the battery. In addition, the heat storage element 120 and the thermoelectric element 130 are embedded in the substrate 102. Therefore, the circuit board 100 of the present invention is a buried circuit board. That is, after the processor 118 is disposed on the circuit board 100 and starts to operate, the heat recovery circuit board 100 can start heat storage and thermoelectric conversion, thereby achieving the functions of power saving and heat recovery.

The heat storage element 120 further includes a housing 122, a phase change material 124, and a connection pad 126. The material of the outer casing 122 may be cerium oxide or ceramic. The phase change material 124 is filled in the outer casing 122, and the material of the phase change material 124 is a material having a high heat of fusion. The high heat of fusion material can be, for example, paraffin wax. The connection pad 126 is disposed on the outer casing 122, wherein the first metal junction 132 of the thermoelectric element 130 is coupled to the phase change material 124 through the connection pad 126.

Since the phase change material 124 has a high heat of fusion, the heat storage element 120 can store thermal energy therein. Therefore, even after the processor 118 finishes operating, the heat storage element 120 can exchange heat with the temperature difference between the first metal joint 132 and continuously transfer the heat energy to the first metal joint 132. In addition, the melting point of the phase change material 124 can be selectively less than or equal to the average temperature at which the processor 118 operates, such that the phase change material 124 maintains a phase change transition state. For example, the melting point of the phase change material 124 can fall within a range between 45 °C and 65 °C.

The circuit board 100 further includes a carrier 140, a first patterned metal layer 156, and a second patterned metal layer 158. The carrier plate 140 is disposed between the heat storage element 120 and the processor 118 and includes a first through hole 115 and a first heat conducting column 141. The first through hole 115 penetrates the carrier plate 140. The first heat conducting column 141 is disposed in the first through hole 115 , wherein the heat storage element 120 and the processor 118 exchange heat through the first heat conducting column 141 .

The first patterned metal layer 156 is located between the heat storage element 120 and the thermoelectric element 130. The first metal junction 132 is connected to the heat storage element 120 through the first patterned metal layer 156 for heat exchange with the heat storage element 120. The second patterned metal layer 158 is disposed on the surface of the substrate 102, the thermoelectric element 130, and the carrier 140 The second patterned metal layer 158 is connected to the processor 118 and the thermoelectric element 130, respectively. The second patterned metal layer 158 is used to connect the processor 118 with the thermoelectric elements 130 to other components. For example, the processor 118 can transmit or drive data to and from other components through the second patterned metal layer 158. The thermoelectric element 130 can transmit electrical energy to the battery or external components (not shown) through the second patterned metal layer 158.

The substrate 102 further includes a first opening 104, a second opening 106, and a third opening 108. The first opening 104 is disposed on the surface of the substrate 102, wherein the heat storage element 120 is located in the first opening 104. The second opening 106 is disposed on the other surface of the substrate 102 and opposite to the first opening 104 , wherein the carrier 140 is located in the second opening 106 . The first opening 104 and the second opening 106 communicate with each other, and the width of the first opening 104 is greater than the width of the second opening 106. Since the width of the first opening 104 is greater than the width of the second opening 106, the second opening 106 can provide the carrier plate 140 to be positioned in the substrate 102.

The third opening 108 is disposed on the surface of the substrate 102 and is located on the same side of the substrate 102 as the second opening 106 , wherein the thermoelectric element 130 is located in the third opening 108 . However, the position of the third opening 108 of the present invention is not limited thereto, and those having ordinary knowledge in the art to which the present invention pertains may elastically select the set position of the third opening 108. For example, the third opening 108 may also be located on the same side of the substrate 102 as the first opening 104.

Specifically, the thermoelectric conversion structure of the circuit board 100 is embedded in the substrate 102 by the heat storage element 120, the thermoelectric element 130, and the carrier 140 in the opening of the substrate 102. Therefore, the space in the circuit board 100 can be effectively utilized. In addition, the heat of the thermal energy generated by the processor 118 on the circuit board 100 The conductive path is sequentially the first heat conducting column 141 of the carrier 140, the heat storage element 120, and the electric heating element 130. In order to enable efficient conduction of heat between components, the circuit board 100 further includes a heat conduction unit 146. A heat conducting unit 146 is disposed between the interconnected elements for increasing the rate of thermal conduction, wherein the thermally conductive unit 146 is comprised of metal, graphene, or a combination thereof. For example, a heat transfer unit 146 is disposed between the heat storage element 120 and the thermoelectric element 130 of FIG. 1 to thereby increase the heat transfer rate between the heat storage element 120 and the thermoelectric element 130. In addition, the heat conducting unit 146 may also be disposed in the first through hole 115 and cover the first heat conducting column 141.

In addition, the circuit board 100 further includes solder balls 166 disposed between the interconnected components for enhancing the fixing strength between the components. For example, between the processor 118 in FIG. 1 and the carrier 140 (or the second patterned metal layer 158), between the heat storage element 120 and the carrier 140, and between the heating element 130 and the first metal layer 156 Solder balls 166 are disposed therebetween. In addition, a copper pad may be provided at the connection point between the components to facilitate the placement of the solder balls 166.

In summary, the circuit board 100 of the present invention has a structure for converting thermal energy into electrical energy. Through the heat storage element 120 and the thermoelectric element 130, the heat energy generated by the processor 118 will be stored in the heat storage element 120 and then converted into electrical energy through the thermoelectric element 130. Further, since the heat storage element 120 and the thermoelectric element 130 of the circuit board 100 are buried in the substrate 102, the space utilization rate of the circuit board 100 is improved. In addition, when the processor 118 stops operating, the thermoelectric element 130 can still convert thermal energy into electrical energy through the thermal energy stored in the thermal storage element 120 to provide electrical energy to other continuously operating components or to supplement electrical energy into the battery.

2A to 2F are respectively side views showing different stages of the first embodiment of the method of manufacturing the circuit board according to the present invention. This implementation In the embodiment, the electric board manufacturing method is described by taking a first embodiment (see FIG. 1) in which a structure such as the circuit board 100 is formed.

In FIG. 2A, step S10 provides a first build-up dielectric layer 152 and a first opening 104 in the first build-up dielectric layer 152.

In FIG. 2B, step S20 is to place the heat storage element 120 into the first opening 104 to embed the heat storage element 120 in the first build-up dielectric layer 152. Next, a metal layer 168 is disposed on the opposite side surfaces of the first build-up dielectric layer 152 and the heat storage element 120.

In FIG. 2C, step S30 is to pattern the metal layer 168 (see FIG. 2B) into the first patterned metal layer 156 and the third patterned metal layer 160. The first patterned metal layer 156 is used to provide internal component connections of the circuit board. The third patterned metal layer 160 is used to provide a circuit board to be connected to an external component (not shown). A person skilled in the art can design a third patterned metal layer 160 according to the arrangement relationship between the circuit board and the external component. picture of. Further, in step S30, the heat transfer unit 146 may be first disposed between the heat storage element 120 and a position where the thermoelectric element 130 (see FIG. 1) is expected to be disposed.

In FIG. 2D, step S40 is to provide a second build-up dielectric layer 154 on the first build-up dielectric layer 152 and the first patterned metal layer 156. The first build-up dielectric layer 152 and the second build-up dielectric layer 154 are laminated to form the substrate 102 in the circuit board (see FIG. 1). Next, a second opening 106 is formed in the second build-up dielectric layer 154, and the second opening 106 is connected to the first opening 104, and the width of the second opening 106 is greater than the width of the first opening 104.

In FIG. 2E, step S50 is to provide a carrier 140 on the heat storage element 130 and in the second opening 106. As described above, when the carrier 140 is placed in the second In the opening 106, since the width of the second opening 106 is greater than the width of the first opening 104, the carrier 140 can be positioned in the second opening 106 to avoid distortion when the components are aligned. Next, a metal layer 168 is disposed on the surface of the second build-up dielectric layer 154 and the carrier 140. In the present embodiment, the carrier 140 may be processed to form a first through hole 115 penetrating the carrier 140. A first heat conducting column 141 is disposed in the first through hole 115, wherein the metal layer 168 is connected to the first heat conducting column 141. Similarly, in order to improve the fixing strength between the heat storage element 120 and the carrier 140, a solder ball 166 and a copper pad may be disposed between the heat storage element 120 and the carrier 140.

In FIG. 2F, step S60 is to pattern metal layer 168 (see FIG. 2E) into second patterned metal layer 158, and third opening 108 is formed in second build-up dielectric layer 154. Next, a thermoelectric element 130 is disposed in the third opening 108 to embed the thermoelectric element 130 in the second build-up dielectric layer 154. The thermoelectric element 130 located in the third opening 108 is connected to the first patterning metal layer 156 via the heat conducting unit 146 to the heat storage element 120. Similarly, a solder ball 166 and a copper pad are disposed between the thermoelectric element 130 and the first patterned metal layer 156 to enhance the fixing strength.

In the present embodiment, the position at which the third opening 108 is formed is a position at which the thermoelectric element 130 is expected to be placed. Those skilled in the art to which the present invention pertains can adjust the formation position of the third opening 108 according to different designs. For example, a third opening 108 is formed in the first build-up dielectric layer 152.

When the step of placing the thermoelectric element 130 is completed, the structure of the board is also completed simultaneously. Next, a processor 118 (see FIG. 1) is disposed on the carrier 140 to complete the structure of the circuit board 100 as shown in FIG.

3 is a side elevational view of a second embodiment of a circuit board 100 in accordance with the present invention. The first embodiment of the present embodiment and the circuit board 100 The difference is that the first opening 104 and the second opening 106 in the present embodiment have the same size (or width). In the present embodiment, the first opening 104 and the second opening 106 have the same width, and the heat storage element 120 and the carrier plate 140 have the same width. In this configuration, the manufacturing process of the circuit board 100 can be more flexible. The following describes the manufacturing flow of the circuit board 100 of FIG.

4A and 4B are respectively side views showing different stages of a second embodiment of a method of manufacturing a circuit board according to the present invention. The difference between the present embodiment and the first embodiment of the circuit board manufacturing method is that the step of providing the carrier 140 in the embodiment is earlier than the step of disposing the second build-up dielectric layer 154 on the first patterned metal layer 156. In addition, FIG. 4A is a process subsequent to the 2Cth drawing, that is, the first patterned metal layer 156 has been formed on the heat storage element 120 and the first build-up dielectric layer 152.

In FIG. 4A, step S40' is to first set the carrier 140 on the first patterned metal layer 156, and then to provide the second build-up dielectric layer 154 on the first build-up dielectric layer 152 and around the carrier 140. In this embodiment, after the step of disposing the second build-up dielectric layer 154 is completed, the second openings 106 of the second build-up dielectric layer 154 are also formed simultaneously, wherein the first opening 104 and the second opening 106 have the same Size (or width). That is to say, the installation position of the carrier plate 140 is the formation position of the second opening 106.

In Fig. 4B, step S50' is to place a metal layer 168 on the carrier 140 and the second build-up dielectric layer 154 for subsequent processing. After the step of disposing the metal layer 168 is completed, the step S60 in the first embodiment of the method of manufacturing the circuit board can be continued (see FIG. 2F). Since these processes and structural details are the same as the first embodiment of the board manufacturing method, they are not repeated. Describe it.

In summary, the steps of placing the carrier layer 140 and the step of forming the second build-up dielectric layer 154 in the circuit board manufacturing method may be in a different order. In this embodiment, the step of disposing the carrier 140 is earlier than the step of disposing the second build-up dielectric layer 154 on the first patterned metal layer 156. However, those skilled in the art can flexibly select settings. The steps of the carrier 140 and the order in which the second build-up dielectric layer 154 is disposed.

Figure 5 is a side elevational view of a third embodiment of a circuit board 100 in accordance with the present invention. The difference between the present embodiment and the first embodiment of the circuit board is that the heat storage element 120, the thermoelectric element 130, and the carrier 140 in the present embodiment are vertically disposed. In addition, the component materials or structural details in the present embodiment are the same as those in the first embodiment of the circuit board, and thus the description thereof will not be repeated.

In FIG. 5, the substrate 102 has a multi-layer structure and includes a first recess 110, a second recess 112, a second through hole 116, and a second heat conducting post 142. The first recess 110 is disposed on the surface of the substrate 102, wherein the thermoelectric element 130 is located in the first recess 110. The second groove 112 is disposed on the other surface of the substrate 102 , wherein the heat storage element 120 is located in the second groove 112 and is connected to the processor 118 for heat exchange with the processor 118 . The first recess 110 and the second recess 112 are opposite each other, and at least a portion of the substrate 102 is located between the heat storage element 120 and the thermoelectric element 130, wherein the partial substrate 102 is a single dielectric layer 164 in the substrate 102. The second via 116 is disposed in the single-layer dielectric layer 164 between the heat storage element 120 and the thermoelectric element 130 , wherein the second via 116 extends through the single-layer dielectric layer 164 . The second heat conducting column 142 is disposed in the second through hole 116 , wherein the heat storage element 120 and the thermoelectric element 130 are heat exchanged through the second heat conducting column 142 .

Specifically, the heat conduction path of the present embodiment is a vertical direction, and a person having ordinary knowledge in the technical field of the present invention can select the circuit board 100 according to the relative positional relationship between the circuit board 100 and the element that supplies electric energy by the thermoelectric element 130. One to third embodiments.

The circuit board 100 further includes a mounting bracket 144. The fixing frame 144 is disposed in the second groove 112, wherein the heat storage element 120 is located in the fixing frame 144. The heat storage element 120 further includes a third recess 114 in which the processor 118 is located. In addition, the surfaces of the substrate 102, the holder 144, the heat storage element 120, and the processor 118 are coplanar. That is, in the present embodiment, the holder 144, the heat storage element 120, and the processor 118 are embedded in the substrate 102. Moreover, since the processor 118 is disposed in the third recess 114 of the heat storage element 120, the heat conduction path between the processor 118 and the heat storage element 120 is shortened, so that the heat energy generated by the processor 118 will be more efficient. And directly absorbed by the heat storage element 120.

The heat storage element further includes a casing 122, a phase change material 124, a third through hole 117, and a third heat conducting column 143. Phase change material 124 is filled within housing 122. The third through hole 117 penetrates the heat storage element 120. The third heat conducting column 143 is disposed in the third through hole 117 , wherein the processor 118 and the first metal connecting surface 132 of the thermoelectric element 130 exchange heat with the third heat conducting column 143 through the second heat conducting column 142 .

In addition, the heat storage element 120 can exchange heat through the third heat conducting column 143 as well as the processor 118. That is, the phase change material 124 of the heat storage element 120 absorbs thermal energy generated by the processor 118 through the third heat conducting column 143. In this configuration, there is a large thermal conduction area between the heat storage element 120 and the processor 118, resulting in improved heat transfer efficiency between the heat storage element 120 and the processor 118.

Similarly, it is more effective for heat conduction inside the circuit board 100. The heat conducting unit (not shown) may be disposed on the surface of the second heat conducting column 142, the surface of the third heat conducting column 143, or an interconnected component. Furthermore, in order to increase the fixing strength between the interconnected elements, a copper pad or solder ball 166 may be disposed between the interconnected elements. For example, between the heat storage element 120 and the processor 118 or between the heat storage element 120 and the thermoelectric element 130.

6A to 6F are respectively side views showing different stages of a third embodiment of a method of manufacturing a circuit board according to the present invention. In the present embodiment, a method of manufacturing a circuit board is described by taking a third embodiment (see FIG. 5) in which a structure such as the circuit board 100 is formed as an example.

In FIG. 6A, step S110 is to first form the heat storage element 120, wherein the heat storage element 120 has a third groove 114. Next, a third through hole 117 penetrating through the heat storage element 120 is formed in the heat storage element 120, and a third heat conducting column 143 is disposed in the third through hole 117.

In FIG. 6B, step S120 is to provide a processor 118 on the heat storage element 120, wherein the processor 118 and the heat storage element 120 can be fixed by a solder ball 166 and a copper pad to enhance the processor 118 and heat storage. The strength of the bond between the elements 120. The processor 118 is located in the third recess 114 and connected to the third heat conducting column 143. Next, the heat storage element 120 is covered with a fixing frame 144.

In FIG. 6C, step S130 is to provide a substrate 102 having a multilayer structure in which the substrate 102 is formed by layering a single dielectric layer 164. Therefore, at the beginning of step S130, a second via hole 116 is formed in the single-layer dielectric layer 164, and a second heat-conducting pillar 142 is disposed in the second via hole 116. In addition, in the step of layering the single-layer dielectric layer 164, the fourth patterned metal layer 162 may be formed first as a wiring layer in the circuit board.

In FIG. 6D, step S140 is to form a first recess 110 and a second recess 112 respectively on opposite surfaces of the substrate 102, wherein the first recess 110 and the second recess 112 are opposite to each other, and a single dielectric layer 164 is located between the first groove 110 and the second groove 112.

In FIG. 6E, step S150 is to provide a thermoelectric element 130 in the first recess 110 to embed the thermoelectric element 130 in the substrate 102, wherein the thermoelectric element 130 is connected to the second heat conducting column 142. Similarly, the thermoelectric element 130 and the second heat conducting column 142 can be fixed by the solder ball 166 and the copper pad to improve the fixing strength between the thermoelectric element 130 and the second heat conducting column 142.

In FIG. 6F, step S160 is to first flip the substrate 102 to facilitate the punching. Next, the processor 118, the heat storage element 120 and the fixing frame 144 configured in step S120 are disposed in the second groove 112 to embed the components in the substrate 102, wherein the heat storage element 120 is located at the processor 118 and the thermoelectric Between elements 130. That is, the processor 118, the heat storage element 120, the thermoelectric element 130, and the holder 144 are buried in the substrate 102 in the same direction. Similarly, in order to improve the fixing strength between the second heat conducting column 142 and the third heat conducting column 143 of the component, a solder ball 166 and a copper pad may be disposed between the second heat conducting pillar 142 and the third heat conducting pillar 143.

In summary, the circuit board of the present invention is a buried circuit board having a heat storage element and a thermoelectric element embedded in the substrate. The heat storage element is used to store waste heat generated by the processor. The thermoelectric element is used to convert thermal energy stored by the heat storage element into electrical energy. Therefore, when the processor is placed on the circuit board and starts to operate, the thermal energy generated by the processor will be stored and conducted to the thermoelectric element for conversion into electrical energy to achieve the function of heat recovery. In addition, because the heat storage element can store heat energy It is stored in it, so even when the processor stops operating, the thermoelectric element can continue to generate electrical energy to provide power to other components that need to be operated, thereby achieving a power saving function.

While the invention has been described above in terms of various embodiments, it is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application attached.

100‧‧‧ boards

102‧‧‧Substrate

104‧‧‧First opening

106‧‧‧second opening

108‧‧‧ third opening

115‧‧‧First through hole

118‧‧‧Processor

120‧‧‧heat storage components

122‧‧‧Shell

124‧‧‧ phase change materials

126‧‧‧Connecting mat

130‧‧‧Thermal components

132‧‧‧First metal joint

134‧‧‧Second metal joint

140‧‧‧ Carrier Board

141‧‧‧First Thermal Conductive Column

146‧‧‧thermal unit

156‧‧‧First patterned metal layer

158‧‧‧Second patterned metal layer

166‧‧‧ solder balls

Claims (9)

A circuit board having a heat recovery function, comprising: a substrate; a heat storage element embedded in the substrate and connected to a processor for heat exchange with the processor; a thermoelectric element embedded in the substrate And comprising: a first metal junction connecting the heat storage element for heat exchange with the heat storage element; and a second metal junction joined to the first metal junction, wherein the thermoelectric element is a temperature difference between the first metal junction and the second metal junction generates an electromotive force; and a carrier disposed between the heat storage component and the processor, the carrier comprising: at least one first via And a first heat conducting column disposed in the first through hole, wherein the heat storage element and the processor exchange heat through the first heat conducting column. The circuit board of claim 1, wherein the substrate further comprises: a first opening disposed on the surface of the substrate, wherein the heat storage element is located in the first opening; and a second opening disposed on the substrate a surface opposite to the first opening, wherein the carrier is located in the second opening, the first opening and the second opening are in communication with each other, and the width of the first opening is greater than the width of the second opening. The circuit board of claim 1, wherein the heat storage element further comprises: a casing; a phase change material filled in the casing; and at least one connection pad disposed on the casing, the first of the thermoelectric elements The metal junction connects the phase change material through the connection pad. A circuit board having a heat recovery function, comprising: a substrate; a heat storage element embedded in the substrate and connected to a processor for heat exchange with the processor; and a thermoelectric element embedded in the substrate And comprising: a first metal junction connecting the heat storage element to exchange heat with the heat storage element; and a second metal joint engaged with the first metal junction, wherein the thermoelectric element borrows Generating an electromotive force from a temperature difference between the first metal junction and the second metal junction; wherein the substrate further comprises: a first recess disposed on a surface of the substrate, wherein the thermoelectric element is located at the first a second groove disposed on the other surface of the substrate, wherein the heat storage element is located in the second groove, the first groove and the second groove are opposite to each other, and at least part of the a substrate is disposed between the heat storage element and the thermoelectric element; at least one second through hole is disposed in the heat storage element and the thermoelectric element A portion of the substrate is disposed on the substrate; and a second heat conducting column is disposed in the second through hole, wherein the heat storage element and the thermoelectric element are heat exchanged through the second heat conducting column. The circuit board of claim 4, wherein the heat storage element further comprises: a casing; a phase change material filled in the casing; at least one third through hole penetrating the heat storage element; and a third heat conduction a post disposed in the third through hole, wherein the processor and the first metal junction of the thermoelectric element exchange heat through the third thermally conductive column. The circuit board of claim 4, further comprising a fixing frame disposed in the second recess, the heat storage component being located in the fixing frame, wherein the heat storage component further comprises a third recess, the processor The substrate, the holder, the heat storage element and the surface of the processor are coplanar. The circuit board of claim 1 or 4, further comprising: a heat conducting unit disposed between the heat storage element and the processor or between the heat storage element and the thermoelectric element, wherein the heat conducting unit is made of metal, Graphene or a combination thereof. A method for manufacturing a circuit board having a heat recovery function, The method includes: forming a first opening in a first build-up dielectric layer, and placing a heat storage element into the first opening to embed the heat storage element in the first build-up dielectric layer; a first patterned metal layer on the first build-up dielectric layer and the heat storage element; a second build-up dielectric layer on the first build-up dielectric layer and the first patterned metal layer The second build-up dielectric layer has a second opening, the second opening is connected to the first opening; a carrier is disposed on the heat storage element and in the second opening, and a second pattern is disposed a metal layer on the second build-up dielectric layer and the carrier; and a third opening formed in the second build-up dielectric layer or the first build-up dielectric layer, and a thermoelectric element is disposed on the first In the three openings, the thermoelectric element is buried in the second build-up dielectric layer, wherein the thermoelectric element is connected to the heat storage element through the first patterned metal layer. A method for manufacturing a circuit board having a heat recovery function includes: forming at least one through hole in a single dielectric layer, and disposing a heat conducting column in the through hole; and layering the single dielectric layer to form a substrate Forming a first recess and a second recess respectively on opposite surfaces of the substrate, wherein the single dielectric layer is located between the first recess and the second recess; A thermoelectric element is disposed in the first recess to embed the thermoelectric element in the substrate, wherein the thermoelectric element is coupled to the heat conducting column; at least another through hole is formed in a heat storage element, and the other pass is formed Filling the hole with another heat conducting column; disposing a processor on the heat storage element, wherein the processor is connected to the other heat conducting column; and disposing the heat storage element and the processor in the second groove to The heat storage element is embedded in the substrate, wherein the heat storage element is located between the processor and the thermoelectric element.