TWI547756B - A photosensitive conductive thin film, a method for forming a conductive film, and a method for forming a conductive pattern - Google Patents

A photosensitive conductive thin film, a method for forming a conductive film, and a method for forming a conductive pattern Download PDF

Info

Publication number
TWI547756B
TWI547756B TW100116765A TW100116765A TWI547756B TW I547756 B TWI547756 B TW I547756B TW 100116765 A TW100116765 A TW 100116765A TW 100116765 A TW100116765 A TW 100116765A TW I547756 B TWI547756 B TW I547756B
Authority
TW
Taiwan
Prior art keywords
conductive
conductive film
film
substrate
photosensitive resin
Prior art date
Application number
TW100116765A
Other languages
Chinese (zh)
Other versions
TW201214032A (en
Inventor
Hiroshi Yamazaki
Yoshimi Igarashi
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201214032A publication Critical patent/TW201214032A/en
Application granted granted Critical
Publication of TWI547756B publication Critical patent/TWI547756B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/093Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antistatic means, e.g. for charge depletion

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing & Machinery (AREA)
  • Laminated Bodies (AREA)
  • Non-Insulated Conductors (AREA)
  • Manufacturing Of Electric Cables (AREA)

Description

感光性導電薄膜、導電膜之形成方法及導電圖型之形成方法Photosensitive conductive film, method of forming conductive film, and method of forming conductive pattern

本發明係關於一種感光性導電薄膜、導電膜之形成方法及導電圖型的形成方法,特別係關於一種形成設於液晶顯示元件等之平面顯示器或觸控螢幕、太陽能電池、有機EL等之裝置的電極配線等之導電圖型的方法。The present invention relates to a photosensitive conductive film, a method of forming a conductive film, and a method of forming a conductive pattern, and more particularly to a device for forming a flat panel display or a touch screen, a solar cell, an organic EL, or the like provided on a liquid crystal display element or the like. A method of conducting patterns of electrode wiring or the like.

在個人電腦或電視等之大型電子機器、導航器、行動電話、電子字典等之小型電子機器、OA‧FA機器等之顯示機器中,具備液晶顯示元件或觸控螢幕者正普及中。液晶顯示元件或觸控螢幕係尋求透明電極等透明性之處,可利用透明之導電膜。太陽能電池等亦同樣。In a display device such as a small electronic device such as a large electronic device such as a personal computer or a television, a navigation device, a mobile phone, or an electronic dictionary, or a display device such as an OA/FA device, a liquid crystal display device or a touch screen is widely used. A liquid crystal display element or a touch screen system is used for transparency such as a transparent electrode, and a transparent conductive film can be used. The same applies to solar cells.

可形成透明之導電膜之材料已知有ITO(Indium-Tin-Oxide)、氧化銦或氧化錫等。此等之材料係對可見光顯示高的透過率,形成液晶顯示元件用基板等之透明電極的材料成為主流。A material which can form a transparent conductive film is known as ITO (Indium-Tin-Oxide), indium oxide or tin oxide. These materials are high in transmittance to visible light, and a material for forming a transparent electrode such as a substrate for a liquid crystal display device has become mainstream.

在液晶顯示裝置中係有時以透明導電膜形成配線、像素電極、端子等之一部分。此時,必須使透明導電膜形成特定的形狀。透明導電膜之圖型方法係可使用一種形成透明導電膜後,於此上面藉光微影蝕刻法形成光阻圖型,藉濕式蝕刻使導電膜圖型化之方法。蝕刻液係對於ITO膜或氧化銦膜,可充分使用由鹽酸與氯化第二鐵之2液所構成的混合液。In the liquid crystal display device, a portion such as a wiring, a pixel electrode, a terminal, or the like is sometimes formed with a transparent conductive film. At this time, it is necessary to form the transparent conductive film into a specific shape. The patterning method of the transparent conductive film may be a method in which a transparent conductive film is formed, a photoresist pattern is formed by photolithography, and a conductive film is patterned by wet etching. In the etching liquid, a mixed liquid composed of two liquids of hydrochloric acid and second iron chloride can be sufficiently used for the ITO film or the indium oxide film.

另外,研究使用ITO以外之材料而形成透明導電膜。例如,於下述專利文獻1中係已揭示藉由使含聚噻吩、聚苯胺等之有機導電性聚合物的輻射線硬化型導電性組成物塗佈於基材表面,硬化,形成具有導電性且透明之硬化被膜的方法。又,於下述專利文獻2中係揭示一種於支持體上塗佈二偶氮硫鎓系等之光阻材料,進一步於其上塗佈噻吩系有機導電材,其後,藉曝光及顯像,形成導電性圖型的方法。In addition, studies have been conducted to form a transparent conductive film using a material other than ITO. For example, in the following Patent Document 1, it is disclosed that a radiation curable conductive composition containing an organic conductive polymer such as polythiophene or polyaniline is applied to a surface of a substrate to be cured to form a conductive property. And a transparent method of hardening the film. Further, in Patent Document 2 listed below, a photoresist material such as a diazo sulfonium-based material is applied onto a support, and a thiophene-based organic conductive material is further coated thereon, followed by exposure and development. A method of forming a conductive pattern.

先前技術文獻Prior technical literature 專利文獻Patent literature

專利文獻1:特開2005-170996號公報Patent Document 1: JP-A-2005-170996

專利文獻2:特表2004-504693號公報Patent Document 2: Japanese Patent Publication No. 2004-504693

ITO膜或氧化錫膜一般係以濺鍍法所形成,但依濺鍍方式之差異、濺鍍功率或氣壓、基板溫度、環境氣體之種類等,膜之性質易改變。依濺鍍條件之變動所產生之透明導電膜的膜質差異,係成為濕式蝕刻膜時之蝕刻速度的參差不齊之原因,產生透明導電膜之圖型化不良,易招致製品良率的降低。因此,使用ITO等之方法係濺鍍與光阻形成以及蝕刻與步驟長,即使在成本面,亦成為很大的負擔。又,如此之方法係很難得到圖型化精度的均一性。The ITO film or the tin oxide film is generally formed by a sputtering method, but the properties of the film are easily changed depending on the difference in sputtering method, sputtering power or gas pressure, substrate temperature, and type of environmental gas. The difference in film quality of the transparent conductive film caused by the fluctuation of the sputtering conditions is a cause of unevenness in the etching rate when the film is wet-etched, resulting in poor patterning of the transparent conductive film, which tends to cause a decrease in the yield of the product. . Therefore, the method of using ITO or the like is such that sputtering and photoresist formation and etching and steps are long, which is a great burden even on the cost side. Moreover, such a method is difficult to obtain the uniformity of the patterning accuracy.

另外,對於以有機導電材料所得到之導電圖型的形成係有如以下之問題。在上述專利文獻1中係未揭示有關導電圖型的形成。藉由使用掩罩之蝕刻而進行圖型化,但,因無適當的蝕刻液,故必須使用電漿蝕刻或雷射而加工。In addition, the formation of a conductive pattern obtained from an organic conductive material has the following problems. The formation of the conductive pattern is not disclosed in the above Patent Document 1. Patterning is performed by etching using a mask. However, since there is no suitable etching liquid, it is necessary to use plasma etching or laser processing.

於專利文獻2中係提出一種使混合有有機導電材料與二偶氮化合物的感光材料之液體塗佈於支持體上,進行圖型化之方法;或在支持體與有機導電材料及感光材料所構成之層之間進一步配置感光材料的方法。但,此等方法係未考量有關欲於所希望之基板上設有導電圖型時之導電圖型與基板之接著性,必須有基板之表面處理等。Patent Document 2 proposes a method of applying a liquid in which a photosensitive material of an organic conductive material and a diazo compound is mixed onto a support, and performing patterning; or in a support, an organic conductive material, and a photosensitive material. A method of further arranging a photosensitive material between the constituent layers. However, these methods do not consider the adhesion between the conductive pattern and the substrate when a conductive pattern is desired to be provided on a desired substrate, and it is necessary to have a surface treatment of the substrate.

本發明係有鑑於上述習知技術具有的問題者,目的在於提供一種可於基板上與基板之接著性充分,以充分的解析度、簡便地形成含有有機導電材料而成之導電圖型的感光性導電薄膜;以及使用此感光性導電薄膜之導電膜的形成方法及導電圖型之形成方法。The present invention has been made in view of the problems of the above-described conventional techniques, and an object of the invention is to provide a photosensitive pattern capable of forming a conductive pattern containing an organic conductive material with sufficient resolution on a substrate and having sufficient adhesion to a substrate. a conductive film; a method of forming a conductive film using the photosensitive conductive film; and a method of forming a conductive pattern.

為解決上述課題,本發明係提供一種感光性導電薄膜,其係具有由支持體、含有有機導電材料之導電層及感光性樹脂層依序層合而成之構造。In order to solve the above problems, the present invention provides a photosensitive conductive film having a structure in which a support, a conductive layer containing an organic conductive material, and a photosensitive resin layer are laminated in this order.

若依本發明之感光性導電薄膜,藉由具有上述構成,使感光性導電薄膜貼黏於基板上以使感光性樹脂層密著,再以曝光、顯像之簡單的步驟,與基板之接著性充分,可容易地形成具有充分透明性之所希望的導電圖型。According to the photosensitive conductive film of the present invention, the photosensitive conductive film is adhered to the substrate to adhere the photosensitive resin layer, and the substrate is followed by a simple step of exposure and development. Sufficient in nature, a desired conductive pattern with sufficient transparency can be easily formed.

又若依本發明之感光性導電薄膜,使感光性導電薄膜貼黏於基板上以使感光性樹脂層密著,再曝光,俾可形成一併具有充分透明性與對基材良好之接著性的導電膜。Further, according to the photosensitive conductive film of the present invention, the photosensitive conductive film is adhered to the substrate so that the photosensitive resin layer is adhered to the substrate, and then exposed, and the film can be formed to have sufficient transparency and good adhesion to the substrate. Conductive film.

又,在本發明之感光性導電薄膜中,從透明性與導電性之觀點,宜上述有機導電材料為噻吩衍生物之聚合物。Further, in the photosensitive conductive film of the present invention, the organic conductive material is preferably a polymer of a thiophene derivative from the viewpoint of transparency and conductivity.

又,從進一步提昇導電膜之圖型化性與對基材之接著性的觀點,宜上述感光性樹脂層係由含有黏合劑聚合物、具有乙烯性不飽合鍵結之光聚合性化合物、及光聚合起始劑之感光性樹脂組成物所構成者。Moreover, from the viewpoint of further improving the patterning property of the conductive film and the adhesion to the substrate, the photosensitive resin layer is preferably a photopolymerizable compound containing a binder polymer and having an ethylenic unsaturated bond, and A composition of a photosensitive resin composition of a photopolymerization initiator.

本發明之感光性導電薄膜係防止從製造至使用之期間中的異物附著或刮傷之點,上述感光性樹脂層之與導電層側相反之側上更層合有保護薄膜。此保護薄膜係使用感光性導電薄膜時可除去。The photosensitive conductive film of the present invention prevents a foreign matter from adhering or scratching during the period from the production to the use, and a protective film is further laminated on the side opposite to the conductive layer side of the photosensitive resin layer. This protective film can be removed when a photosensitive conductive film is used.

本發明係可提供一種導電膜之形成方法,其特徵為使上述本發明之感光性導電薄膜之上述感光性樹脂層貼附於基材上,且於該基材上將至少依序層合感光性樹脂層及導電層,並將經層合之上述感光性樹脂層曝光。The present invention provides a method of forming a conductive film, characterized in that the photosensitive resin layer of the photosensitive conductive film of the present invention is attached to a substrate, and at least the layer is photosensitive on the substrate. The resin layer and the conductive layer are exposed, and the laminated photosensitive resin layer is exposed.

又,若依本發明之導電膜的形成方法,藉由將本發明之感光性導電薄膜的感光性樹脂層貼附於基材上,於基材上將依序設置感光性樹脂層及導電層,再以所謂使此進行曝光的簡單步驟,可容易地於基材上形成由上述導電層所構成之導電膜。此導電膜係上述感光性樹脂層藉曝光進行硬化,可於基材上充分接著。Further, according to the method for forming a conductive film of the present invention, the photosensitive resin layer of the photosensitive conductive film of the present invention is attached to a substrate, and a photosensitive resin layer and a conductive layer are sequentially provided on the substrate. Further, a conductive film composed of the above-mentioned conductive layer can be easily formed on the substrate by a simple step of exposing this. In the conductive film, the photosensitive resin layer is cured by exposure and can be sufficiently adhered to the substrate.

本發明係提供一種導電圖型之形成方法,其特徵為將上述本發明之感光性導電薄膜之上述感光性樹脂層貼附於基材,於基材上至少依序層合感光性樹脂層及導電層,並將經層合之感光性樹脂層曝光、顯像。The present invention provides a method of forming a conductive pattern, wherein the photosensitive resin layer of the photosensitive conductive film of the present invention is attached to a substrate, and a photosensitive resin layer is laminated on the substrate at least sequentially. The conductive layer is exposed and developed by laminating the photosensitive resin layer.

若依本發明之導電圖型的形成方法,將本發明之感光性導電薄膜之感光性樹脂層貼附於基材,於基材上依序層合感光性樹脂層及導電層,再以所謂曝光、顯像的簡單方法,可容易地於基材上形成上述導電層被圖型化而成之導電圖型。此導電圖型係上述感光性樹脂層藉曝光進行硬化,可於基材上充分接著。According to the method for forming a conductive pattern of the present invention, the photosensitive resin layer of the photosensitive conductive film of the present invention is attached to a substrate, and the photosensitive resin layer and the conductive layer are sequentially laminated on the substrate, and so-called A simple method of exposure and development can easily form a conductive pattern in which the above-mentioned conductive layer is patterned on a substrate. In the conductive pattern, the photosensitive resin layer is cured by exposure and can be sufficiently adhered to the substrate.

本發明係提供一種導電膜基板,其係具備基板與於該基板上藉由上述本發明之導電膜之形成方法所形成之導電膜。The present invention provides a conductive film substrate comprising a substrate and a conductive film formed on the substrate by the above-described method of forming a conductive film of the present invention.

本發明係又,提供一種導電膜基板,其係具備基板與於該基板上藉由上述本發明之導電圖型之形成方法所形成之導電圖型。The present invention further provides a conductive film substrate comprising a substrate and a conductive pattern formed on the substrate by the above-described method of forming a conductive pattern of the present invention.

若依本發明,可提供一種可於基板上與基板之接著性充分,以充分的解析度、簡便地形成含有有機導電材料而成之導電圖型的感光性導電薄膜;以及,使用此感光性導電薄膜之導電膜的形成方法及導電圖型之形成方法。According to the present invention, it is possible to provide a photosensitive conductive film which is excellent in adhesion to a substrate on a substrate and which can easily form a conductive pattern containing an organic conductive material with sufficient resolution; and use of the photosensitivity A method of forming a conductive film of a conductive film and a method of forming a conductive pattern.

用以實施發明之形態Form for implementing the invention

以下,詳細說明有關本發明之適宜實施形態。又,本說明書中之「(甲基)丙烯酸酯」係意指「丙烯酸酯」及對應其之「甲基丙烯酸酯」。同樣地,所謂「(甲基)丙烯酸」係意指「丙烯酸」及對應其之「甲基丙烯酸」,所謂「(甲基)丙烯醯氧基」係意指「丙烯醯氧基」及對應其之「甲基丙烯醯氧基」。Hereinafter, preferred embodiments of the present invention will be described in detail. In addition, "(meth)acrylate" in this specification means "acrylate" and the "methacrylate" corresponding to it. Similarly, the term "(meth)acrylic" means "acrylic acid" and the corresponding "methacrylic acid", and the term "(meth)acryloxy" means "acryloxy" and its corresponding "Methyl propylene oxime".

圖1係表示本發明之感光性導電薄膜的適當一實施形態的模式截面圖。圖1所示之感光性導電薄膜10係依序層合薄膜狀之支持體1、含有有機導電材料之導電層2、感光性樹脂層3及保護薄膜4。Fig. 1 is a schematic cross-sectional view showing a preferred embodiment of the photosensitive conductive film of the present invention. The photosensitive conductive film 10 shown in FIG. 1 is a film-form support 1 in this order, a conductive layer 2 containing an organic conductive material, a photosensitive resin layer 3, and a protective film 4.

以下,分別詳細說明有關構成本實施形態之感光性導電薄膜10的薄膜狀之支持體(以下,有時亦稱「薄膜支持體」)、導電層、感光性樹脂層及保護薄膜。Hereinafter, a film-shaped support (hereinafter sometimes referred to as "thin film support") constituting the photosensitive conductive film 10 of the present embodiment, a conductive layer, a photosensitive resin layer, and a protective film will be described in detail.

薄膜支持體1係宜為透明之支持薄膜。此處,所謂透明意指對轉印於基材後之曝光步驟中的曝光光線具有透過性,在本實施形態中係宜在紫外線(300~400nm)區域具有透過性。The film support 1 is preferably a transparent support film. Here, the term "transparent" means that the exposure light in the exposure step after transfer to the substrate is transparent, and in the present embodiment, it is preferable to have permeability in an ultraviolet (300 to 400 nm) region.

透明之支持薄膜可舉例如聚對苯二甲酸乙二酯薄膜、聚丙烯薄膜、聚碳酸酯薄膜等之具有耐熱性及耐溶劑性之聚合體薄膜。此等之中,從透明性或耐熱性之觀點,宜使用聚對苯二甲酸乙二酯薄膜。又,此等之聚合體薄膜係其後顯像感光性樹脂層3時,或為使所形成之導電膜曝出被除去,故並非實施不可能除去之表面處理者,或材質。The transparent support film may, for example, be a polymer film having heat resistance and solvent resistance such as a polyethylene terephthalate film, a polypropylene film or a polycarbonate film. Among these, a polyethylene terephthalate film is preferably used from the viewpoint of transparency or heat resistance. Further, when the polymer film is used to develop the photosensitive resin layer 3, or the formed conductive film is removed by exposure, it is not a surface treatment or material which is impossible to remove.

上述支持薄膜之厚度宜為5~300μm,更宜為20~300μm。若支持薄膜之厚度未達5μm,機械強度會降低,形成導電層時或形成感光性樹脂層時,或,感光性樹脂層之顯像前剝離支持薄膜時,有支持薄膜易破裂之傾向,另外,若超過300μm,介由支持薄膜而使活性光線照射於感光性樹脂層時,有解析度降低之傾向,又,有價格變高之傾向。The thickness of the above supporting film is preferably 5 to 300 μm, more preferably 20 to 300 μm. If the thickness of the supporting film is less than 5 μm, the mechanical strength is lowered, when the conductive layer is formed or when the photosensitive resin layer is formed, or when the supporting film is peeled off before the development of the photosensitive resin layer, there is a tendency that the supporting film is easily broken, and When it exceeds 300 μm, when the active light is applied to the photosensitive resin layer via the support film, the resolution tends to decrease, and the price tends to be high.

於導電層2所含有之有機導電材料,可舉例如噻吩或噻吩衍生物之聚合物或苯胺或苯胺衍生物之聚合物。具體上,可使用聚乙烯二氧噻吩、聚己基噻吩、聚苯胺等,又,「CREBIOS」(H.C.Starck)公司製、商品名)、「SEPLEGYDA OC-U1」(信越Polymer股份公司製、商品名)等之市售品。The organic conductive material contained in the conductive layer 2 may, for example, be a polymer of a thiophene or a thiophene derivative or a polymer of an aniline or an aniline derivative. Specifically, polyethylene dioxythiophene, polyhexyl thiophene, polyaniline, etc., and "CREBIOS" (HCStarck), "SEPLEGYDA OC-U1" ("Shin-Etsu Polymer Co., Ltd.", trade name ) and other commercial products.

於導電層2所含有之有機導電材料宜為可藉光照射形成圖型的材料。又,有機導電材料若為可得到本發明之效果的範圍,亦可與藉光照射形成圖型的材料併用而於導電層2含有。The organic conductive material contained in the conductive layer 2 is preferably a material which can be patterned by light irradiation. Further, the organic conductive material may be used in the conductive layer 2 in combination with a material which forms a pattern by light irradiation, in the range in which the effect of the present invention can be obtained.

噻吩或噻吩衍生物之聚合物可舉例如具有可以下述式(1)所示之重複單元的聚合物。The polymer of the thiophene or the thiophene derivative may, for example, be a polymer having a repeating unit represented by the following formula (1).

[化1][Chemical 1]

式(1)中,R1及R2分別獨立表示氫原子、鹵原子、氰基、碳數1~20之烷基、碳數1~20之鹵烷基、碳數1~20之烷氧基、碳數6~40之芳基胺基、取代或無取代之核碳數6~40的芳基、或取代或無取代之核碳數2~40的雜環基,相鄰之取代基間係亦可互相鍵結形成環。又,聚合物之末端基分別可舉例如氫原子、或取代或無取代之一價的基。In the formula (1), R 1 and R 2 each independently represent a hydrogen atom, a halogen atom, a cyano group, an alkyl group having 1 to 20 carbon atoms, a haloalkyl group having 1 to 20 carbon atoms, and an alkoxy group having 1 to 20 carbon atoms. a aryl group having 6 to 40 carbon atoms, a substituted or unsubstituted aryl group having 6 to 40 carbon atoms, or a substituted or unsubstituted heterocyclic group having 2 to 40 carbon atoms, and an adjacent substituent. The inter-systems can also be bonded to each other to form a ring. Further, the terminal group of the polymer may, for example, be a hydrogen atom or a substituted or unsubstituted one.

在上述式(1)之R1及R2中,鹵原子可舉例如氟、氯、溴、及碘等。In R 1 and R 2 of the above formula (1), examples of the halogen atom include fluorine, chlorine, bromine, and iodine.

碳數1~20之烷基可舉例如甲基、乙基、丙基、異丙基、正丁基、第二丁基、異丁基、第三丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基、正十一碳基、正十二碳基、正十三碳基、正十四碳基、正十五碳基、正十六碳基、正十七碳基、正十八碳基、新戊基、1-甲基戊基、2-甲基戊基、1-戊基己基、1-丁基戊基、1-庚基辛基、3-甲基戊基、環戊基、環己基、環辛基、3,5-四甲基環己基等。此等之中,較佳係甲基、乙基、丙基、異丙基、正丁基、第二丁基、異丁基、第三丁基、正戊基、正己基、正庚基、正辛基、正壬基、正癸基、正十一碳基、正十二碳基、正十三碳基、正十四碳基、正十五碳基、正十六碳基、正十七碳基、正十八碳基、新戊基、1-甲基戊基、1-戊基己基、1-丁基戊基、1-庚基辛基、環己基、環辛基、及3,5-四甲基環己基等。The alkyl group having 1 to 20 carbon atoms may, for example, be a methyl group, an ethyl group, a propyl group, an isopropyl group, a n-butyl group, a second butyl group, an isobutyl group, a t-butyl group, a n-pentyl group or a n-hexyl group. Heptyl, n-octyl, n-decyl, n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadeca , heptadecyl, n-octadecyl, neopentyl, 1-methylpentyl, 2-methylpentyl, 1-pentylhexyl, 1-butylpentyl, 1-heptyloctyl , 3-methylpentyl, cyclopentyl, cyclohexyl, cyclooctyl, 3,5-tetramethylcyclohexyl, and the like. Among these, methyl, ethyl, propyl, isopropyl, n-butyl, t-butyl, isobutyl, tert-butyl, n-pentyl, n-hexyl, n-heptyl, N-octyl, n-decyl, n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl, n-pentadecyl, n-hexadeca, n-ten Heptacarbyl, n-octadecyl, neopentyl, 1-methylpentyl, 1-pentylhexyl, 1-butylpentyl, 1-heptyloctyl, cyclohexyl, cyclooctyl, and , 5-tetramethylcyclohexyl and the like.

碳數1~20之鹵烷基可舉例如氟甲基、二氟甲基、三氟甲基、及五氟乙基等。此等之中宜為氟甲基、二氟甲基、三氟甲基。The haloalkyl group having 1 to 20 carbon atoms may, for example, be a fluoromethyl group, a difluoromethyl group, a trifluoromethyl group or a pentafluoroethyl group. Among these, fluoromethyl, difluoromethyl and trifluoromethyl groups are preferred.

碳數1~20之烷氧基可舉例如表示為-OY,Y為與以上述之烷基所說明者同樣者,較佳之例亦同樣。The alkoxy group having 1 to 20 carbon atoms is, for example, represented by -OY, and Y is the same as those described for the above alkyl group, and preferred examples are also the same.

碳數6~40之芳基胺基可舉例如具有二苯基胺基等、或二苯基胺基或胺基作為取代基之苯基、萘基、蒽基、三亞苯基、丙(二)烯合芴基(Fluoranthenyl)、聯苯基等。此等之中,較佳係具有二苯基胺基或胺基作為取代基之苯基、萘基。The arylamine group having 6 to 40 carbon atoms may, for example, be a phenyl group, a naphthyl group, a decyl group, a triphenylene group or a propyl group having a diphenylamino group or the like or a diphenylamino group or an amine group as a substituent. ) olefinic fluorenyl (Fluoranthenyl), biphenyl or the like. Among these, a phenyl group or a naphthyl group having a diphenylamino group or an amine group as a substituent is preferred.

核碳數6~40之芳基可舉例如苯基、萘基、聯苯基、蒽基、三亞苯基等。取代基可舉例如甲基、乙基、環己基、異丙基、丁基、苯基等。此等之中,較佳係取代或無取代之苯基、萘基、聯苯基。Examples of the aryl group having 6 to 40 carbon atoms include a phenyl group, a naphthyl group, a biphenyl group, a fluorenyl group, and a triphenylene group. The substituent may, for example, be a methyl group, an ethyl group, a cyclohexyl group, an isopropyl group, a butyl group or a phenyl group. Among these, a substituted or unsubstituted phenyl group, a naphthyl group, or a biphenyl group is preferable.

取代或無取代之碳數2~40的雜環基可舉例如1-吡咯基、2-吡咯基、3-吡咯基、吡嗪基、2-吡啶基、1-咪唑基、2-咪唑基、1-吡唑基、1-吲哚嗪基、2-吲哚嗪基、3-吲哚嗪基、5-吲哚嗪基、6-吲哚嗪基、7-吲哚嗪基、8-吲哚嗪基、2-咪唑吡啶基、3-咪唑吡啶基、5-咪唑吡啶基、6-咪唑吡啶基、7-咪唑吡啶基、8-咪唑吡啶基、3-吡啶基、4-吡啶基、1-吲哚基、2-吲哚基、3-吲哚基、4-吲哚基、5-吲哚基、6-吲哚基、7-吲哚基、1-異吲哚基、2-異吲哚基、3-異吲哚基、4-異吲哚基、5-異吲哚基、6-異吲哚基、7-異吲哚基、2-呋喃基、3-呋喃基、2-苯並呋喃基、3-苯並呋喃基、4-苯並呋喃基、5-苯並呋喃基、6-苯並呋喃基、7-苯並呋喃基、1-異苯並呋喃基、3-異苯並呋喃基、4-異苯並呋喃基、5-異苯並呋喃基、6-異苯並呋喃基、7-異苯並呋喃基、2-喹啉基、3-喹啉基、4-喹啉基、5-喹啉基、6-喹啉基、7-喹啉基、8-喹啉基、1-異喹啉基、3-異喹啉基、4-異喹啉基、5-異喹啉基、6-異喹啉基、7-異喹啉基、8-異喹啉基、2-喹喔啉基、5-喹喔啉基、6-喹喔啉基、1-咔唑基、2-咔唑基、3-咔唑基、4-咔唑基、9-咔唑基、β-咔啉-1-基、β-咔啉-3-基、β-咔啉-4-基、β-咔啉-5-基、β-咔啉-6-基、β-咔啉-7-基、β-咔啉-8-基、β-咔啉-9-基、1-菲基、2-菲基、3-菲基、4-菲基、6-菲基、7-菲基、8-菲基、9-菲基、10-菲基、1-吖啶基、2-吖啶基、3-吖啶基、4-吖啶基、9-吖啶基、1,7-菲繞啉-2-基、1,7-菲繞啉-3-基、1,7-菲繞啉-4-基、1,7-菲繞啉-5-基、1,7-菲繞啉-6-基、1,7-菲繞啉-8-基、1,7-菲繞啉-9-基、1,7-菲繞啉-10-基、1,8-菲繞啉-2-基、1,8-菲繞啉-3-基、1,8-菲繞啉-4-基、1,8-菲繞啉-5-基、1,8-菲繞啉-6-基、1,8-菲繞啉-7-基、1,8-菲繞啉-9-基、1,8-菲繞啉-10-基、1,9-菲繞啉-2-基、1,9--菲繞啉-3-基、1,9-菲繞啉-4-基、1,9-菲繞啉-5-基、1,9-菲繞啉-6-基、1,9-菲繞啉-7-基、1,9-菲繞啉-8-基、1,9-菲繞啉-10-基、1,10-菲繞啉-2-基、1,10-菲繞啉-3-基、1,10-菲繞啉-4-基、1,10-菲繞啉-5-基、2,9-菲繞啉-1-基、2,9--菲繞啉-3-基、2,9-菲繞啉-4-基、2,9-菲繞啉-5-基、2,9-菲繞啉-6-基、2,9-菲繞啉-7-基、2,9-菲繞啉-8-基、2,9-菲繞啉-10-基、2,8-菲繞啉-1-基、2,8-菲繞啉-3-基、2,8-菲繞啉-4-基、2,8-菲繞啉-5-基、2,8-菲繞啉-6-基、2,8-菲繞啉-7-基、2,8-菲繞啉-9-基、2,8-菲繞啉-10-基、2,7-菲繞啉-1-基、2,7-菲繞啉-3-基、2,7-菲繞啉-4-基、2,7-菲繞啉-5-基、2,7-菲繞啉-6-基、2,7-菲繞啉-8-基、2,7-菲繞啉-9-基、2,7-菲繞啉-10-基、1-吩嗪基、2-吩嗪基、1-吩噻嗪基、2-吩噻嗪基、3-吩噻嗪基、4-吩噻嗪基、10-吩噻嗪基、1-吩噁嗪基、2-吩噁嗪基、3-吩噁嗪基、4-吩噁嗪基、10-吩噁嗪基、2-噁唑基、4-噁唑基、5-噁唑基、2-噁二唑基、5-噁二唑基、3-呋咱基、2-噻吩基、3-噻吩基、2-甲基吡咯-1-基、2-甲基吡咯-3-基、2-甲基吡咯-4-基、2-甲基吡咯-5-基、3-甲基吡咯-1-基、3-甲基吡咯-2-基、3-甲基吡咯-4-基、3-甲基吡咯-5-基、2-第三丁基吡咯-4-基、3-(2-苯基丙基)吡咯-1-基、2-甲基-1-吲哚基、4-甲基-1-吲哚基、2-甲基-3-吲哚基、4-甲基-3-吲哚基、2-第三丁基-1-吲哚基、4-第三丁基-1-吲哚基、2-第三丁基-3-吲哚基、4-第三丁基-3-吲哚基、1-二苯並呋喃基、2-二苯並呋喃基、3-二苯並呋喃基、4-二苯並呋喃基、1-二苯並硫苯基、2-二苯並硫苯基、3-二苯並硫苯基、4-二苯並硫苯基、1-矽芴基、2-矽芴基、3-矽芴基、4-矽芴基、1-鍺芴基、2-鍺芴基、3-鍺芴基及4-鍺芴基等。The substituted or unsubstituted heterocyclic group having 2 to 40 carbon atoms may, for example, be a 1-pyrrolyl group, a 2-pyrrolyl group, a 3-pyrrolyl group, a pyrazinyl group, a 2-pyridyl group, a 1-imidazolyl group or a 2-imidazolyl group. , 1-pyrazolyl, 1-pyridazinyl, 2-pyridazinyl, 3-pyridazinyl, 5-pyridazinyl, 6-pyridazinyl, 7-pyridazinyl, 8 -pyridazinyl, 2-imidazolidinyl, 3-imidazolidinyl, 5-imidazolidinyl, 6-imidazolidinyl, 7-imidazolidinyl, 8-imidazolidinyl, 3-pyridyl, 4-pyridine Base, 1-indenyl, 2-indenyl, 3-indenyl, 4-indenyl, 5-indenyl, 6-fluorenyl, 7-fluorenyl, 1-isodecyl , 2-isoindolyl, 3-isoindolyl, 4-isoindolyl, 5-isoindolyl, 6-isoindenyl, 7-isoindolyl, 2-furanyl, 3- Furanyl, 2-benzofuranyl, 3-benzofuranyl, 4-benzofuranyl, 5-benzofuranyl, 6-benzofuranyl, 7-benzofuranyl, 1-isobenzo Furanyl, 3-isobenzofuranyl, 4-isobenzofuranyl, 5-isobenzofuranyl, 6-isobenzofuranyl, 7-isobenzofuranyl, 2-quinolinyl, 3 -quinolinyl, 4-quinolyl, 5-quinolinyl, 6-quinoline , 7-quinolyl, 8-quinolyl, 1-isoquinolinyl, 3-isoquinolinyl, 4-isoquinolinyl, 5-isoquinolinyl, 6-isoquinolinyl, 7- Isoquinolyl, 8-isoquinolinyl, 2-quinoxalinyl, 5-quinoxalinyl, 6-quinoxalinyl, 1-oxazolyl, 2-oxazolyl, 3-oxazolyl , 4-oxazolyl, 9-carbazolyl, β-carboline-1-yl, β-carbolin-3-yl, β-carbolin-4-yl, β-carboline-5-yl, β -porphyrin-6-yl, β-carboline-7-yl, β-carboline-8-yl, β-carboline-9-yl, 1-phenanthryl, 2-phenanthryl, 3-phenanthryl, 4-phenanthryl, 6-phenanthryl, 7-phenanthryl, 8-phenanthryl, 9-phenanthryl, 10-phenanthryl, 1-acridinyl, 2-acridinyl, 3-acridinyl, 4- Acridinyl, 9-acridinyl, 1,7-phenanthroline-2-yl, 1,7-phenanthroline-3-yl, 1,7-phenanthroline-4-yl, 1,7- Phenanthroline-5-yl, 1,7-phenanthroline-6-yl, 1,7-phenanthroline-8-yl, 1,7-phenanthroline-9-yl, 1,7-phenanthrene Benzin-10-yl, 1,8-phenanthroline-2-yl, 1,8-phenanthroline-3-yl, 1,8-phenanthroline-4-yl, 1,8-phenanthroline- 5-yl, 1,8-phenanthroline-6-yl, 1,8-phenanthroline-7-yl, 1,8-phenanthroline-9-yl, 1,8-phenanthroline-10- 1,1,phenanthroline-2-yl, 1,9-phenanthroline-3-yl, 1,9-phenanthroline- 4-yl, 1,9-phenanthroline-5-yl, 1,9-phenanthroline-6-yl, 1,9-phenanthroline-7-yl, 1,9-phenanthroline-8- 1,1,phenanthroline-10-yl, 1,10-phenanthroline-2-yl, 1,10-phenanthroline-3-yl, 1,10-phenanthroline-4-yl, 1,10-phenanthroline-5-yl, 2,9-phenanthroline-1-yl, 2,9-phenanthroline-3-yl, 2,9-phenanthroline-4-yl, 2 ,9-phenanthroline-5-yl, 2,9-phenanthroline-6-yl, 2,9-phenanthroline-7-yl, 2,9-phenanthroline-8-yl, 2,9 -phenanthroline-10-yl, 2,8-phenanthroline-1-yl, 2,8-phenanthroline-3-yl, 2,8-phenanthroline-4-yl, 2,8-phenanthrene Rotunolin-5-yl, 2,8-phenanthroline-6-yl, 2,8-phenanthroline-7-yl, 2,8-phenanthroline-9-yl, 2,8-phenanthroline -10-yl, 2,7-phenanthroline-1-yl, 2,7-phenanthroline-3-yl, 2,7-phenanthroline-4-yl, 2,7-phenanthroline-5 -yl, 2,7-phenanthroline-6-yl, 2,7-phenanthroline-8-yl, 2,7-phenanthroline-9-yl, 2,7-phenanthroline-10-yl , 1-phenazinyl, 2-phenazine, 1-phenothiazine, 2-phenothiazine, 3-phenothiazine, 4-phenothiazine, 10-phenothiazine, 1- Phenoazinyl, 2-phenoxazinyl, 3-phenoxazinyl, 4-phenoxazinyl, 10-phenoxazinyl, 2-oxazolyl, 4-oxazolyl, 5-oxazolyl 2-oxadiazolyl 5-oxadiazolyl, 3-furazyl, 2-thienyl, 3-thienyl, 2-methylpyrrol-1-yl, 2-methylpyrrol-3-yl, 2-methylpyrrole-4 -yl, 2-methylpyrrole-5-yl, 3-methylpyrrol-1-yl, 3-methylpyrrol-2-yl, 3-methylpyrrol-4-yl, 3-methylpyrrole-5 -yl, 2-t-butylpyrrol-4-yl, 3-(2-phenylpropyl)pyrrol-1-yl, 2-methyl-1-indolyl, 4-methyl-1-indole Mercapto, 2-methyl-3-indolyl, 4-methyl-3-indolyl, 2-tert-butyl-1-indenyl, 4-tert-butyl-1-indenyl , 2-tert-butyl-3-indenyl, 4-tert-butyl-3-indenyl, 1-dibenzofuranyl, 2-dibenzofuranyl, 3-dibenzofuranyl , 4-dibenzofuranyl, 1-dibenzothiophenyl, 2-dibenzothiophenyl, 3-dibenzothiophenyl, 4-dibenzothiophenyl, 1-fluorenyl , 2-indenyl, 3-indenyl, 4-indenyl, 1-indenyl, 2-indenyl, 3-indenyl, 4-indenyl, and the like.

此等之中較佳係2-吡啶基、1-吲哚嗪基、2-吲哚嗪基、3-吲哚嗪基、5-吲哚嗪基、6-吲哚嗪基、7-吲哚嗪基、8-吲哚嗪基、2-咪唑吡啶基、3-咪唑吡啶基、5-咪唑吡啶基、6-咪唑吡啶基、7-咪唑吡啶基、8-咪唑吡啶基、3-吡啶基、4-吡啶基、1-吲哚基、2-吲哚基、3-吲哚基、4-吲哚基、5-吲哚基、6-吲哚基、7-吲哚基、1-異吲哚基、2-異吲哚基、3-異吲哚基、4-異吲哚基、5-異吲哚基、6-異吲哚基、7-異吲哚基、1-咔唑基、2-咔唑基、3-咔唑基、4-咔唑基、9-咔唑基、1-二苯並呋喃基、2-二苯並呋喃基、3-二苯並呋喃基、4-二苯並呋喃基、1-二苯並硫苯基、2-二苯並硫苯基、3-二苯並硫苯基、4-二苯並硫苯基、1-矽芴基、2-矽芴基、3-矽芴基、4-矽芴基、1-鍺芴基、2-鍺芴基、3-鍺芴基、4-鍺芴基。Preferred among these are 2-pyridyl, 1-pyridazinyl, 2-pyridazinyl, 3-pyridazinyl, 5-pyridazinyl, 6-pyridazinyl, 7-fluorene. Pyridazinyl, 8-pyridazinyl, 2-imidazolidinyl, 3-imidazolidinyl, 5-imidazolidinyl, 6-imidazolidinyl, 7-imidazolidinyl, 8-imidazolidinyl, 3-pyridine Base, 4-pyridyl, 1-indenyl, 2-indenyl, 3-indenyl, 4-indenyl, 5-indenyl, 6-fluorenyl, 7-fluorenyl, 1 -isoindolyl, 2-isoindolyl, 3-isoindolyl, 4-isoindolyl, 5-isodecyl, 6-isoindenyl, 7-isoindenyl, 1- Carbazolyl, 2-carbazolyl, 3-oxazolyl, 4-oxazolyl, 9-oxazolyl, 1-dibenzofuranyl, 2-dibenzofuranyl, 3-dibenzofuran , 4-dibenzofuranyl, 1-dibenzothiophenyl, 2-dibenzothiophenyl, 3-dibenzothiophenyl, 4-dibenzothiophenyl, 1-oxime Base, 2-indenyl, 3-indenyl, 4-indenyl, 1-indenyl, 2-indenyl, 3-indenyl, 4-indenyl.

又,取代基可舉例如甲基、乙基、環己基、異丙基、丁基、及苯基等。Further, examples of the substituent include a methyl group, an ethyl group, a cyclohexyl group, an isopropyl group, a butyl group, and a phenyl group.

R1及R2係亦可互相鍵結,形成環。環宜為例如二噁烷環、苯環、環己環、萘基環。The R 1 and R 2 systems may also be bonded to each other to form a ring. The ring is preferably, for example, a dioxane ring, a benzene ring, a cyclohexane ring or a naphthyl ring.

式(1)之Y1及Y2宜分別獨立為氫原子、碳數1~20之烷基、取代或無取代之核碳數6~40的芳基、或取代或無取代之核碳數2~40的雜環基。烷基、芳基或雜環基可舉例如與R1、R2同樣者。Y 1 and Y 2 of the formula (1) are each independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, a substituted or unsubstituted aryl group having a core carbon number of 6 to 40, or a substituted or unsubstituted nucleocarbon number. a heterocyclic group of 2 to 40. The alkyl group, the aryl group or the heterocyclic group may, for example, be the same as R 1 and R 2 .

以式(1)所示之聚噻吩或聚噻吩衍生物,係可使用以市售之製品、或公知之方法合成者。聚噻吩或聚噻吩衍生物之分子量一般就數目平均分子量而言,使用1000~100000之範圍者。若分子量小於此,無法發揮依π電子共軛系之充分的導電性,另外,若分子量太大,變黏稠,很難形成薄膜。重複單元係鄰接之重複單元、與以頭-尾、頭-頭、尾-尾之樣式結合而形成聚合物。取代噻吩環之3位的烷基或烷氧基係若使用太長鏈者,恐於分子之立體構造的規則上產生混亂,損及移動度,故宜為碳數20以下者。The polythiophene or polythiophene derivative represented by the formula (1) can be synthesized by a commercially available product or a known method. The molecular weight of the polythiophene or polythiophene derivative is generally in the range of from 1,000 to 100,000 in terms of the number average molecular weight. When the molecular weight is smaller than this, sufficient conductivity by the π-electron conjugated system cannot be exhibited, and if the molecular weight is too large, it becomes viscous, and it is difficult to form a film. The repeating unit is contiguous with the repeating unit and combines with the head-to-tail, head-to-head, tail-tail pattern to form a polymer. When the alkyl group or the alkoxy group at the 3-position of the thiophene ring is used, if the chain is too long, it is feared that the three-dimensional structure of the molecule is disordered and the degree of mobility is impaired. Therefore, it is preferably a carbon number of 20 or less.

導電層2係藉由例如於薄膜支持體1上,塗佈使上述有機導電材料加入水及/或有機溶劑、依需要之界面活性劑等的分散安定劑等之導電層形成用分散液之後,進行乾燥以形成。塗佈係可以例如輥塗法、Comma塗佈法、凹版塗佈法、氣刀塗佈法、模縫塗佈法、桿塗佈法、噴塗法等公知的方法進行。又,乾燥係以30~150℃、約1~30分鐘、熱風對流式乾燥機等進行。The conductive layer 2 is applied, for example, to the film support 1 by applying a dispersion for forming a conductive layer such as a dispersion stabilizer such as water and/or an organic solvent or a surfactant as needed. Drying is carried out to form. The coating system can be carried out by a known method such as a roll coating method, a Comma coating method, a gravure coating method, an air knife coating method, a die coating method, a rod coating method, or a spray coating method. Further, the drying is carried out at 30 to 150 ° C for about 1 to 30 minutes, a hot air convection dryer or the like.

導電層2之厚度係依使用本發明之感光性導電薄膜所形成之導電膜或導電圖型的用途或所追求之導電性而異,但宜為1μm以下,更宜為0.01μm~0.5μm,尤宜為0.01μm~0.3μm。若導電層2之厚度為1μm以下,易確保光之透過性。The thickness of the conductive layer 2 varies depending on the use of the conductive film or the conductive pattern formed by the photosensitive conductive film of the present invention or the conductivity sought, but is preferably 1 μm or less, more preferably 0.01 μm to 0.5 μm. It is particularly preferably from 0.01 μm to 0.3 μm. When the thickness of the conductive layer 2 is 1 μm or less, it is easy to ensure light transmittance.

感光性樹脂層3宜為由黏結劑聚合物、具乙烯性不飽和鍵之光聚合性化合物及光聚合起始劑之感光性樹脂組成物所構成者。The photosensitive resin layer 3 is preferably composed of a binder polymer, a photopolymerizable compound having an ethylenically unsaturated bond, and a photosensitive resin composition of a photopolymerization initiator.

黏結劑聚合物可舉例如丙烯酸樹脂、苯乙烯樹脂、環氧樹脂、醯胺樹脂、醯胺環氧樹脂、醇酸樹脂、及酚樹脂等。從鹼顯像性優異之觀點,宜使用丙烯酸樹脂。此等係可1種單獨或組合2種以上而使用。Examples of the binder polymer include an acrylic resin, a styrene resin, an epoxy resin, a guanamine resin, a guanamine epoxy resin, an alkyd resin, and a phenol resin. From the viewpoint of excellent alkali developability, an acrylic resin is preferably used. These may be used alone or in combination of two or more.

上述黏結劑聚合物係例如可藉由使聚合性單體自由基聚合來製造。上述聚合性單體可舉例如在苯乙烯、乙烯基甲苯、α-甲基苯乙烯等之α-位或芳香族環中可被取代之聚合的苯乙烯衍生物、二丙酮丙烯醯胺等之丙烯醯胺、丙烯腈、乙烯基-正丁基醚等乙烯醇的醚類、(甲基)丙烯酸烷酯、(甲基)丙烯酸四氫呋喃酯、(甲基)丙烯酸二甲基胺基乙基酯、(甲基)丙烯酸二乙基胺基乙基酯、(甲基)丙烯酸縮水甘油基酯、2,2,2-三氟乙基(甲基)丙烯酸酯、2,2,3,3-四氟丙基(甲基)丙烯酸酯、(甲基)丙烯酸、α-溴(甲基)丙烯酸、α-氯(甲基)丙烯酸、β-呋喃基(甲基)丙烯酸、β-苯乙烯基(甲基)丙烯酸、馬來酸、馬來酸酐、馬來酸單甲酯、馬來酸單乙酯、馬來酸單異丙酯等之馬來酸單酯、富馬酸、桂皮酸、α-氰基桂皮酸、衣康酸、巴豆酸及丙酸等。The above binder polymer can be produced, for example, by radical polymerization of a polymerizable monomer. The polymerizable monomer may, for example, be a styrene derivative polymerizable in an α-position or an aromatic ring such as styrene, vinyltoluene or α-methylstyrene, or a diacetone acrylamide or the like. Ethers of vinyl alcohol such as acrylamide, acrylonitrile, vinyl-n-butyl ether, alkyl (meth)acrylate, tetrahydrofurfuryl (meth)acrylate, dimethylaminoethyl (meth)acrylate , diethylaminoethyl (meth)acrylate, glycidyl (meth)acrylate, 2,2,2-trifluoroethyl (meth) acrylate, 2,2,3,3- Tetrafluoropropyl (meth) acrylate, (meth) acrylate, α-bromo (meth) acrylate, α-chloro (meth) acrylate, β-furyl (meth) acrylate, β-styryl Maleic acid monoester, fumaric acid, cinnamic acid, etc. of (meth)acrylic acid, maleic acid, maleic anhydride, monomethyl maleate, monoethyl maleate, monoisopropyl maleate, --cyano cinnamic acid, itaconic acid, crotonic acid and propionic acid.

上述(甲基)丙烯酸烷酯可舉例如以下述通式(2)所示之化合物、此等之化合物的烷基上羥基、環氧基、鹵素基等取代之化合物。The alkyl (meth)acrylate may, for example, be a compound represented by the following formula (2), a compound having a hydroxyl group on the alkyl group of the compound, an epoxy group, a halogen group or the like.

[化2][Chemical 2]

通式(2)中,R21係表示氫原子或甲基,R22係表示碳數1~12之烷基。上述碳數1~12之烷基可舉例如甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十一碳基、十二碳基及此等之構造異性體。In the formula (2), R 21 represents a hydrogen atom or a methyl group, and R 22 represents an alkyl group having 1 to 12 carbon atoms. The above alkyl group having 1 to 12 carbon atoms may, for example, be a methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group, a hexyl group, a heptyl group, an octyl group, a decyl group, a decyl group, an undecyl group or a dodecyl group. And such structural heterosexuals.

上述以通式(2)所示之化合物可舉例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸十一碳酯、(甲基)丙烯酸十二碳酯。此等係可1種單獨或組合2種以上而使用。Examples of the compound represented by the formula (2) include methyl (meth)acrylate, ethyl (meth)acrylate, propyl (meth)acrylate, butyl (meth)acrylate, and (methyl). Amyl acrylate, hexyl (meth) acrylate, heptyl (meth) acrylate, octyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, decyl (meth) acrylate, (A) Ethyl acrylate, undecyl (meth) acrylate, dodecyl (meth) acrylate. These may be used alone or in combination of two or more.

又,在本發明所使用之黏合劑聚合物係從使鹼顯像性更良好之觀點,宜為具有羧基。如此之黏合劑聚合物係可藉由使具有羧基之聚合性單體與其他聚合性單體自由基聚合來製造。上述具有羧基之聚合性單體宜為如上述之(甲基)丙烯酸。Moreover, it is preferable that the binder polymer used in the present invention has a carboxyl group from the viewpoint of further improving the alkali developability. Such a binder polymer can be produced by radically polymerizing a polymerizable monomer having a carboxyl group with another polymerizable monomer. The above polymerizable monomer having a carboxyl group is preferably (meth)acrylic acid as described above.

黏合劑聚合物具有之羧基的比率,就具有羧基之聚合性單體對使用之全聚合性單體的比率,從謀求鹼顯像性與耐鹼性之均衡性的觀點,宜為12~50質量%,更宜為12~40質量%,尤宜為15~30質量%,極宜為15~25質量%。此具有羧基之聚合性單體的比率未達12質量%時,有鹼顯像性差之傾向,若超過50質量%,有耐鹼性差之傾向。The ratio of the carboxyl group of the binder polymer to the ratio of the polymerizable monomer of the carboxyl group to the total polymerizable monomer to be used is preferably from 12 to 50 from the viewpoint of balance between alkali developability and alkali resistance. The mass% is more preferably 12 to 40% by mass, particularly preferably 15 to 30% by mass, and most preferably 15 to 25% by mass. When the ratio of the carboxyl group-containing polymerizable monomer is less than 12% by mass, the alkali developability tends to be inferior, and if it exceeds 50% by mass, the alkali resistance tends to be poor.

黏合劑聚合物之重量平均分子量係從謀求機械強度及鹼顯像性之均衡性之觀點,宜為20000~300000,更宜為40000~150000。重量平均分子量未達20000時,有耐顯像液性降低之傾向,若超過300000,有顯像時間變長之傾向。又,在本發明之重量平均分子量係可藉凝膠滲透色層分析法(GPC)來測定,使用標準聚苯乙烯所製成之檢量像所換算之值。The weight average molecular weight of the binder polymer is preferably from 20,000 to 300,000, more preferably from 40,000 to 150,000, from the viewpoint of achieving a balance between mechanical strength and alkali developability. When the weight average molecular weight is less than 20,000, the liquid crystal resistance tends to be lowered, and if it exceeds 300,000, the development time tends to be long. Further, the weight average molecular weight of the present invention can be measured by gel permeation chromatography (GPC) using a value converted from a standard amount of polystyrene.

此等黏合劑聚合物係可一種單獨或組合2種類以上而使用。組合2種類以上而使用時之黏合劑聚合物係可舉例如由相異之共聚合成分所構成的2種類以上之黏合劑聚合物、相異之重量平均分子量的2種類以上之黏合劑聚合物、相異分散度的2種類以上之黏合劑聚合物。These binder polymers may be used singly or in combination of two or more types. When the binder polymer is used in combination of two or more types, for example, two or more types of binder polymers composed of different copolymerized components, and two or more types of binder polymers having different weight average molecular weights may be used. Two or more kinds of binder polymers having different dispersities.

其次,說明有關具有乙烯性不飽和鍵之光聚合性化合物。具有乙烯性不飽和鍵之光聚合性化合物可舉例如於多元醇使α,β-不飽和羧酸反應所得到的化合物、2,2-雙(4-((甲基)丙烯醯氧聚乙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧聚丙氧基)苯基)丙烷、2,2-雙(4-((甲基)丙烯醯氧聚乙氧基聚丙氧基)苯基)丙烷等之雙酚A系(甲基)丙烯酸酯化合物、於含縮水甘油基之化合物使α,β-不飽和羧酸反應所得到的化合物、具有胺基甲酸酯鍵之(甲基)丙烯酸酯化合物等的胺基甲酸酯單體、γ-氯-β-羥基丙基-β’-(甲基)丙烯醯氧基乙基-鄰酞酸酯、β-羥基乙基-β’-(甲基)丙烯醯氧基乙基-鄰酞酸酯、β-羥基丙基-β’-(甲基)丙烯醯氧基乙基-鄰酞酸酯、(甲基)丙烯酸烷酯等。此等係可單獨或組合2種類以上而使用。Next, a photopolymerizable compound having an ethylenically unsaturated bond will be described. The photopolymerizable compound having an ethylenically unsaturated bond may, for example, be a compound obtained by reacting a polyhydric alcohol with an α,β-unsaturated carboxylic acid, 2,2-bis(4-((meth)acrylofluorene). Oxy)phenyl)propane, 2,2-bis(4-((meth)propenyloxypolypropoxy)phenyl)propane, 2,2-bis(4-((methyl)propene) a bisphenol A-based (meth) acrylate compound such as ethoxypolypropoxy)phenyl)propane or a compound obtained by reacting a glycidyl group-containing compound with an α,β-unsaturated carboxylic acid, having an amine group A urethane monomer such as a (meth) acrylate compound of a formate bond, γ-chloro-β-hydroxypropyl-β'-(meth) propylene methoxyethyl-phthalate , β-hydroxyethyl-β'-(meth)acrylomethoxyethyl-phthalate, β-hydroxypropyl-β'-(meth)acryloxyethyl-phthalate , (meth)acrylic acid alkyl ester and the like. These may be used alone or in combination of two or more types.

於上述多元醇使α,β-不飽和羧酸反應所得到的化合物可舉例如乙烯基之數目為2~14的聚乙二醇二(甲基)丙烯酸酯、丙烯基之數目為2~14的聚丙二醇二(甲基)丙烯酸酯、乙烯基之數目為2~14且丙烯基之數目為2~14的聚乙烯丙二醇二(甲基)丙烯酸酯、三羥甲基丙烷二(甲基)丙烯酸酯、三羥甲基丙烷三(甲基)丙烯酸酯、三羥甲基丙烷乙氧基三(甲基)丙烯酸酯、三羥甲基丙烷二乙氧基三(甲基)丙烯酸酯、三羥甲基丙烷三乙氧基三(甲基)丙烯酸酯、三羥甲基丙烷四乙氧基三(甲基)丙烯酸酯、三羥甲基丙烷五乙氧基三(甲基)丙烯酸酯等之三羥甲基丙烷(甲基)丙烯酸酯、四羥甲基甲烷三(甲基)丙烯酸酯、四羥甲基甲烷四(甲基)丙烯酸酯等之四羥甲基甲烷(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、季戊四醇四(甲基)丙烯酸酯、季戊四醇烷氧基三(甲基)丙烯酸酯等之季戊四醇(甲基)丙烯酸酯、二季戊四醇五(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、二季戊四醇烷氧基五(甲基)丙烯酸酯等之二季戊四醇(甲基)丙烯酸酯。The compound obtained by reacting the above polyol with an α,β-unsaturated carboxylic acid may, for example, be a polyethylene glycol di(meth)acrylate having a vinyl group number of 2 to 14, and the number of the propylene groups being 2 to 14 Polypropylene glycol di(meth) acrylate, polyethylene propylene glycol di(meth) acrylate, trimethylolpropane di(methyl) having a number of vinyl groups of 2 to 14 and a number of propylene groups of 2 to 14. Acrylate, trimethylolpropane tri(meth)acrylate, trimethylolpropane ethoxy tris(meth)acrylate, trimethylolpropane diethoxy tri(meth)acrylate, three Hydroxymethylpropane triethoxytri(meth)acrylate, trimethylolpropane tetraethoxytri(meth)acrylate, trimethylolpropane pentaethoxytri(meth)acrylate, etc. Tetramethylol methane (meth) acrylate such as trimethylolpropane (meth) acrylate, tetramethylol methane tri(meth) acrylate or tetramethylol methane tetra(meth) acrylate Pentaerythritol (methyl) such as ester, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, pentaerythritol alkoxy tri(meth)acrylate Dipentaerythritol (meth) acrylate such as acrylate, dipentaerythritol penta (meth) acrylate, dipentaerythritol hexa (meth) acrylate, dipentaerythritol alkoxy penta (meth) acrylate.

上述之中,就透明性、接著性優異之點,宜含有由三甲基丙烷(甲基)丙烯酸酯、四羥甲基甲烷(甲基)丙烯酸酯、五季戊四醇(甲基)丙烯酸酯、二季戊四醇(甲基)丙烯酸酯選出之至少一種。Among the above, in terms of transparency and adhesion, it is preferable to contain trimethylpropane (meth) acrylate, tetramethylol methane (meth) acrylate, pentaerythritol (meth) acrylate, and At least one selected from pentaerythritol (meth) acrylate.

上述胺基甲酸酯單體可舉例如於β位具有羥基之(甲基)丙烯酸單體與異佛爾酮二異氰酸酯、2,6-甲苯二異氰酸酯、2,4-甲苯二異氰酸酯、1,6-六亞甲基二異氰酸酯等之二異氰酸酯化合物的加成反應物、三[(甲基)丙烯醯氧四乙二醇異氰酸酯]六亞甲基三聚異氰酸酯、EO改性胺基甲酸酯二(甲基)丙烯酸酯、EO、PO改性胺基甲酸酯二(甲基)丙烯酸酯等。又,「EO」係表示環氧乙烷、被EO改性之化合物係具有環氧乙烷基之嵌段構造。又,「PO」係表示環氧丙烷、被PO改性之化合物係具有環氧丙烷基之嵌段構造。EO改性胺基甲酸酯二(甲基)丙烯酸酯可舉例如「UA-11」(新中村化學工業股份公司製、商品名)。又,EO、PO改性胺基甲酸酯二(甲基)丙烯酸酯可舉例如「UA-13」(新中村化學工業股份公司製、商品名)。The urethane monomer may, for example, be a (meth)acrylic monomer having a hydroxyl group at the β position, and isophorone diisocyanate, 2,6-toluene diisocyanate, 2,4-toluene diisocyanate, 1, An addition reaction product of a diisocyanate compound such as 6-hexamethylene diisocyanate, tris[(meth)acryloyloxytetraethylene glycol isocyanate]hexamethylene tripolyisocyanate, EO-modified urethane Di(meth)acrylate, EO, PO modified urethane di(meth)acrylate, and the like. Further, "EO" means a structure in which ethylene oxide and a compound modified with EO have an ethylene oxide group. Moreover, "PO" means a block structure in which propylene oxide and a compound modified with PO have an oxypropylene group. The EO-modified urethane di(meth)acrylate may, for example, be "UA-11" (manufactured by Shin-Nakamura Chemical Co., Ltd., trade name). In addition, EO and PO-modified urethane di(meth)acrylate are, for example, "UA-13" (manufactured by Shin-Nakamura Chemical Co., Ltd., trade name).

光聚合性化合物之含有比率係相對於黏合劑聚合物及光聚合性化合物的總量100質量份,宜為30~80質量份,更宜為40~70質量份。此含有比率未達30質量份時,光硬化性不充份,有所轉印之導電膜的硬化性不充分之傾向,若超過80質量份,捲取為薄膜時,有很難保管之傾向。The content ratio of the photopolymerizable compound is preferably from 30 to 80 parts by mass, more preferably from 40 to 70 parts by mass, per 100 parts by mass of the total of the binder polymer and the photopolymerizable compound. When the content ratio is less than 30 parts by mass, the photocurability is insufficient, and the curable property of the transferred conductive film tends to be insufficient. When the content exceeds 80 parts by mass, it tends to be difficult to store when it is wound into a film. .

然後,說明有關光聚合起始劑。光聚合起始劑可舉例如二苯甲酮、N,N’-四甲基-4,4’-二胺基二苯甲酮(米希勒酮)、N,N’-四乙基-4,4’-二胺基二苯甲酮、4-甲氧基-4’-二甲基胺基二苯甲酮、2-苯甲基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮-1、2-甲基-1-[4-(甲基硫)苯基]-2-嗎啉基-丙酮-1等之芳香族酮、2-乙基蒽醌、菲醌、2-第三丁基蒽醌、八甲基蒽醌、1,2-苯並蒽醌、2,3-苯並蒽醌、2-苯基蒽醌、2,3-二苯基蒽醌、1-氯蒽醌、2-甲基蒽醌、1,4-萘醌、9,10-菲醌、2-甲基-1,4-萘醌、2,3-二甲基蒽醌等之醌、苯偶因甲基醚、苯偶因乙基醚、苯偶因苯基醚等之苯偶因醚化合物、苯偶因、甲基苯偶因、乙基苯偶因等之苯偶因化合物、1,2-辛二酮、1-[4-(苯基硫)-,2-(鄰苯甲醯基肟)]、乙酮、1-[9-乙基-6-(2-甲基苯甲醯基)-9H-咔唑-3-基]-、1-(鄰乙醯基肟)等的肟酯化合物、苯甲基二甲基縮酮等之苯甲基衍生物、2-(鄰-氯苯基)-4,5-二苯基咪唑偶體、2-(鄰-氯苯基)-4,5-二(甲氧基苯基)咪唑偶體、2-(鄰-氟苯基)-4,5-二苯基咪唑偶體、2-(鄰甲氧基苯基)-4,5-二苯基咪唑偶體、2-(對甲氧基苯基)-4,5-二苯基咪唑偶體等之2,4,5-三芳基咪唑偶體、9-苯基吖啶、1,7-雙(9,9’-吖啶基)庚烷等之吖啶衍生物、N-苯基甘氨酸、N-苯基甘氨酸衍生物、香豆素系化合物、噁唑系化合物。又,二個之2,4,5-三芳基咪唑的芳基之取代基係亦可得到同一對象之化合物,亦可得到相異而非對稱之化合物。又,如二乙基硫雜蒽酮與二甲基胺基安息香酸之組合,亦可組合硫雜蒽酮系化合物與3級胺化合物。此等之中,從透明性之觀點係更宜為2-苯甲基-2-二甲基胺基-1-(4-嗎啉基苯基)-丁酮-1等之芳香族酮化合物或1,2-辛二酮、1-[4-(苯基硫)-、2-(鄰-苯甲醯基肟)]等之肟酯化合物。此等係可單獨或組合2種類以上而使用。Then, the photopolymerization initiator is explained. The photopolymerization initiator may, for example, be benzophenone, N,N'-tetramethyl-4,4'-diaminobenzophenone (michlerone), N,N'-tetraethyl- 4,4'-diaminobenzophenone, 4-methoxy-4'-dimethylaminobenzophenone, 2-benzyl-2-dimethylamino-1-(4) Aromatic ketone of 2-morpholinophenyl)-butanone-1, 2-methyl-1-[4-(methylthio)phenyl]-2-morpholinyl-acetone-1, 2-B Base, phenanthrene, 2-tert-butyl fluorene, octamethyl hydrazine, 1,2-benzopyrene, 2,3-benzopyrene, 2-phenyl fluorene, 2,3 -diphenylanthracene, 1-chloroindole, 2-methylindole, 1,4-naphthoquinone, 9,10-phenanthrenequinone, 2-methyl-1,4-naphthoquinone, 2,3- a benzoin ether compound such as dimethyl hydrazine, benzoin methyl ether, benzoin ethyl ether or benzoin phenyl ether, benzoin, methyl benzoine, ethylbenzene A benzoin compound such as an occasional factor, 1,2-octanedione, 1-[4-(phenylsulfanyl)-,2-(o-benzylidenehydrazide)], ethyl ketone, 1-[9-B An oxime ester compound such as -6-(2-methylbenzhydryl)-9H-carbazol-3-yl]-, 1-(o-ethenylhydrazine), benzyl dimethyl ketal, etc. Benzyl derivative, 2-(o-chlorophenyl)-4,5- Diphenylimidazole coupler, 2-(o-chlorophenyl)-4,5-bis(methoxyphenyl)imidazole, 2-(o-fluorophenyl)-4,5-diphenyl Imidazole couple, 2-(o-methoxyphenyl)-4,5-diphenylimidazolium, 2-(p-methoxyphenyl)-4,5-diphenylimidazolium, etc. 2 , 4,5-triaryl imidazolium, 9-phenyl acridine, 1,7-bis(9,9'-acridinyl)heptane, etc. acridine derivatives, N-phenylglycine, N- A phenylglycine derivative, a coumarin compound, or an oxazole compound. Further, the substituent of the aryl group of the two 2,4,5-triarylimidazoles can also give a compound of the same object, and a compound which is different from the symmetry can also be obtained. Further, a combination of diethyl thioxanthone and dimethylamino benzoic acid may also be combined with a thioxanthone compound and a tertiary amine compound. Among these, from the viewpoint of transparency, an aromatic ketone compound such as 2-benzylmethyl-2-dimethylamino-1-(4-morpholinylphenyl)-butanone-1 is more preferable. Or an oxime ester compound such as 1,2-octanedione, 1-[4-(phenylsulfanyl)-, 2-(o-benzylidenehydrazide) or the like. These may be used alone or in combination of two or more types.

光聚合起始劑之含有比率係相對於黏合劑聚合物及光聚合性化合物的總量100質量份,宜為0.1~30質量份,更宜為1~10質量份。此含有比率未達0.1質量份時,有光感度不充份之傾向。若超過30質量份,曝光時在組成物之表面的吸收增大而內部的光硬化變成不充分的傾向。The content ratio of the photopolymerization initiator is preferably from 0.1 to 30 parts by mass, more preferably from 1 to 10 parts by mass, per 100 parts by mass of the total of the binder polymer and the photopolymerizable compound. When the content ratio is less than 0.1 part by mass, the light sensitivity tends to be insufficient. When it exceeds 30 parts by mass, the absorption on the surface of the composition increases during exposure, and the internal photohardening tends to be insufficient.

感光性樹脂層3係依需要而可使對甲苯磺醯胺等之可塑劑、填充劑、消泡劑、耐燃劑、安定劑、密著性賦予劑、流平劑、剝離促進劑、抗氧化劑、香料、影像劑、熱交聯劑等之添加劑單獨或組合2種類以上而含有。此等之添加劑之添加量係相對於黏合劑聚合物及光聚合性化合物的總量100質量份,宜為0.01~20質量份。The photosensitive resin layer 3 may be a plasticizer such as p-toluenesulfonamide, a filler, an antifoaming agent, a flame retardant, a stabilizer, an adhesion imparting agent, a leveling agent, a peeling accelerator, and an antioxidant. Additives such as a fragrance, an imaging agent, and a thermal crosslinking agent are contained singly or in combination of two or more types. The amount of the additive to be added is preferably 0.01 to 20 parts by mass based on 100 parts by mass of the total of the binder polymer and the photopolymerizable compound.

感光性樹脂層3係於形成導電層2之透明薄膜支持體1上,依需要而塗佈已溶解於甲醇、乙醇、丙醇、甲乙酮、甲基溶纖劑、乙基溶纖劑、甲苯、N,N-二甲基甲醯胺、丙二醇單甲基醚等之溶劑或此等之混合溶劑的固形分10~60質量%之感光性樹脂組成物的溶液。但,此時,乾燥後之感光性樹脂層中的殘存有機溶劑量係為防止在其後之步驟的有機溶劑之擴散,故宜為2質量%以下。The photosensitive resin layer 3 is applied to the transparent film support 1 on which the conductive layer 2 is formed, and is dissolved in methanol, ethanol, propanol, methyl ethyl ketone, methyl cellosolve, ethyl cellosolve, toluene, if necessary. A solvent such as N,N-dimethylformamide or propylene glycol monomethyl ether or a solution of a photosensitive resin composition having a solid content of 10 to 60% by mass of such a mixed solvent. However, in this case, the amount of the residual organic solvent in the photosensitive resin layer after drying is preferably 2% by mass or less in order to prevent the diffusion of the organic solvent in the subsequent step.

感光性樹脂組成物之塗佈係可以例如輥塗法、Comma塗佈法、凹版塗佈法、氣刀塗佈法、模縫塗佈法、桿塗佈法、噴塗法等公知的方法進行。又,乾燥係以70~150℃進行約5~30分鐘。The coating of the photosensitive resin composition can be carried out by a known method such as a roll coating method, a Comma coating method, a gravure coating method, an air knife coating method, a die coating method, a rod coating method, or a spray coating method. Further, the drying is carried out at 70 to 150 ° C for about 5 to 30 minutes.

感光性樹脂層3之厚度度係依用途而異,但乾燥後之厚度宜為1~50μm,更宜為1~20μm,尤宜為1~10μm。此厚度未達1μm時,有工業上很難塗佈之傾向,若超過50μm,因光透過的降低造成感度不充分,有感光性樹脂層之光硬化性降低的傾向。又,接著性、圖型化優異之點,係感光性樹脂層3之厚度宜為1μm以上。The thickness of the photosensitive resin layer 3 varies depending on the application, but the thickness after drying is preferably 1 to 50 μm, more preferably 1 to 20 μm, and particularly preferably 1 to 10 μm. When the thickness is less than 1 μm, it tends to be difficult to apply industrially. When the thickness exceeds 50 μm, the sensitivity is insufficient due to a decrease in light transmission, and the photocurability of the photosensitive resin layer tends to be lowered. Further, the adhesiveness and patterning are excellent, and the thickness of the photosensitive resin layer 3 is preferably 1 μm or more.

其次,說明有關保護薄膜。在本發明之感光性導電薄膜中如圖1所示,可在與感光性樹脂層3之薄膜支持體1側相反側之面層合保護薄膜。Next, the description relates to the protective film. In the photosensitive conductive film of the present invention, as shown in FIG. 1, the protective film can be laminated on the surface opposite to the film support 1 side of the photosensitive resin layer 3.

就保護薄膜而言可使用例如聚對苯二甲酸乙二酯薄膜、聚丙烯薄膜、聚乙烯薄膜等之具有耐熱性及耐溶劑性之聚合體薄膜。就保護薄膜而言亦可使用與上述薄膜支持體同樣之聚合體薄膜。As the protective film, a polymer film having heat resistance and solvent resistance such as a polyethylene terephthalate film, a polypropylene film, or a polyethylene film can be used. As the protective film, a polymer film similar to the above film support can also be used.

保護薄膜與感光性樹脂層之間的接著力係為使保護薄膜易從感光性樹脂層剝離,宜小於導電層2及感光性樹脂層3與薄膜支持體1之間的接著力。The adhesive force between the protective film and the photosensitive resin layer is such that the protective film is easily peeled off from the photosensitive resin layer, and is preferably smaller than the adhesion between the conductive layer 2 and the photosensitive resin layer 3 and the film support 1.

又,保護薄膜係宜為低魚眼之薄膜。具體上宜為在保護薄膜中所含有的直徑80μm以上的魚眼數為5個/m2以下。又,所謂「魚眼」係使材料熱熔融,混練,押出,雙軸延伸,澆鑄法等製造薄膜時,材料之異物、未溶解物、氧化劣化物等被攝入於薄膜中者。Further, the protective film is preferably a film of low fish eyes. Specifically, it is preferable that the number of fish eyes having a diameter of 80 μm or more contained in the protective film is 5/m 2 or less. In addition, the "fisheye" is a method in which a material is thermally melted, kneaded, extruded, biaxially stretched, or casted, and a foreign material, an undissolved product, or an oxidized degradation product of the material is taken into the film.

保護薄膜之厚度宜為1~100μm,更宜為5~50μm,尤宜為5~30μm,最宜為15~30μm。保護薄膜之厚度未達1μm時,積層時,有保護薄膜易破裂之傾向,若超過100μm,有價格變高的傾向。The thickness of the protective film is preferably from 1 to 100 μm, more preferably from 5 to 50 μm, particularly preferably from 5 to 30 μm, and most preferably from 15 to 30 μm. When the thickness of the protective film is less than 1 μm, the protective film tends to be easily broken when laminated, and if it exceeds 100 μm, the price tends to be high.

感光性導電薄膜係亦可進一步於薄膜支持體上具有接著層、阻氣層等之層。The photosensitive conductive film may further have a layer such as an adhesive layer or a gas barrier layer on the film support.

感光性導電薄膜係例如可以直接平板狀之狀態,或,捲繞於圓筒狀等之卷芯,以輥狀之形態貯存。又,此時,宜薄膜支持體成為最外側般捲取。The photosensitive conductive film can be stored in a roll shape, for example, in a state in which it is directly in a flat shape, or wound around a core such as a cylindrical shape. Further, at this time, it is preferable that the film support is wound as the outermost side.

又,感光性導電薄膜未具有保護薄膜時,如此之感光性導電薄膜係可直接以平板狀之形態貯存。Further, when the photosensitive conductive film does not have a protective film, such a photosensitive conductive film can be directly stored in the form of a flat plate.

捲芯係只要為以往所使用者即可,無特別限定,而可舉例如聚乙烯樹脂、聚丙烯樹脂、聚苯乙烯樹脂、聚氯乙烯樹脂、ABS樹脂(丙烯腈-丁二烯-苯乙烯共聚物)等之塑膠。又,於捲取成輥狀之感光性導電薄膜的端面係從端面保護之觀點,宜設置端面分離物,尚且,從耐邊緣熔合之觀點,宜設置防濕端面分離物。又,捆包感光性導電薄膜時,宜於透濕性小的空白片包住而包裝。The core of the core is not particularly limited as long as it is a conventional user, and examples thereof include a polyethylene resin, a polypropylene resin, a polystyrene resin, a polyvinyl chloride resin, and an ABS resin (acrylonitrile-butadiene-styrene). Copolymer) and other plastics. Further, it is preferable to provide an end face separator from the viewpoint of protecting the end face of the photosensitive conductive film wound into a roll shape from the end face, and it is preferable to provide a moisture-proof end face separator from the viewpoint of edge-fusing resistance. Further, when the photosensitive conductive film is bundled, it is preferable to wrap the package with a blank sheet having a small moisture permeability.

本實施形態之感光性導電薄膜係宜於薄膜支持體上塗佈導電層形成用分散液而形成導電層,然後,塗佈感光性樹脂組成物而形成感光性樹脂層者。宜藉由於薄膜支持體上塗佈導電層形成用分散液,俾容易形成均一的導電層。In the photosensitive conductive film of the present embodiment, a conductive layer is formed by applying a dispersion for forming a conductive layer on a film support, and then applying a photosensitive resin composition to form a photosensitive resin layer. It is preferable to form a uniform conductive layer by coating a conductive layer-forming dispersion on the film support.

若依本實施形態的感光性導電薄膜,於必須有導電圖型之基材上轉印感光性樹脂層及導電層,藉由進行曝光及顯像,可容易形成具有透明且良好的圖型化之導電膜。According to the photosensitive conductive film of the present embodiment, the photosensitive resin layer and the conductive layer are transferred onto a substrate having a conductive pattern, and exposure and development are performed, whereby a transparent and excellent pattern can be easily formed. Conductive film.

又,本實施形態之感光性導電薄膜所形成之導電膜或導電圖型係富有柔軟性,故適宜作為可撓性顯示器之電極等。進一步,所形成之導電膜或導電圖型係可由有機物構成,故利用來作為施加偏壓電壓之電子機器的電極時,具有可充分抑制遷移之效果。Moreover, since the conductive film or the conductive pattern formed by the photosensitive conductive film of the present embodiment is flexible, it is suitable as an electrode of a flexible display or the like. Further, since the formed conductive film or conductive pattern can be made of an organic material, it is effective as an effect of suppressing migration when it is used as an electrode of an electronic device to which a bias voltage is applied.

本發明之導電膜的形成方法之一實施形態係可舉例如具備如下步驟之方法:積層步驟,使上述本實施形態的感光性導電薄膜於基材上積層成感光性樹脂層密著;曝光步驟,對基材上之感光性樹脂層照射活性光線。感光性導電薄膜具有保護薄膜時係使已剝離保護薄膜之感光性導電薄膜從感光性樹脂層側積層於基材上。藉由上述積層步驟,於基材上依序層合感光性樹脂層、導電層及支持體。In one embodiment of the method for forming a conductive film of the present invention, for example, a method of laminating a photosensitive conductive film of the present embodiment on a substrate to form a photosensitive resin layer is adhered; and an exposure step The photosensitive resin layer on the substrate is irradiated with active light. When the photosensitive conductive film has a protective film, the photosensitive conductive film having the peeled protective film is laminated on the substrate from the side of the photosensitive resin layer. The photosensitive resin layer, the conductive layer, and the support are sequentially laminated on the substrate by the above-described lamination step.

基材可舉例如玻璃基板、聚碳酸酯等之塑膠基板等。The substrate may, for example, be a plastic substrate such as a glass substrate or polycarbonate.

積層步驟係例如藉由使感光性導電薄膜當有保護薄膜時除去其之後,一邊加熱一邊使感光性樹脂層側壓接於基材,以進行層合的方法。又,此作業係從密著性及追蹤性之觀點,宜在減壓下層合。感光性導電薄膜之層合係宜使感光性樹脂層及/或基板加熱至70~130℃,壓接壓力宜為0.1~1.0MPa左右(約1~10kgf/cm2),但於此等之條件係無特別限制。又,若使感光性樹脂層如上述般加熱至70~130℃,不須預先預熱處理基材,但為進一步提昇層合性,亦可進行基材之預熱處理。In the laminating step, for example, when the photosensitive conductive film is removed as a protective film, the photosensitive resin layer side is pressure-bonded to the substrate while heating to perform lamination. Moreover, this operation is preferably laminated under reduced pressure from the viewpoint of adhesion and traceability. The lamination of the photosensitive conductive film is preferably such that the photosensitive resin layer and/or the substrate are heated to 70 to 130 ° C, and the pressure of the bonding is preferably about 0.1 to 1.0 MPa (about 1 to 10 kgf/cm 2 ). The conditions are not particularly limited. Further, when the photosensitive resin layer is heated to 70 to 130 ° C as described above, it is not necessary to preheat the substrate in advance, but in order to further improve the laminate property, the substrate may be subjected to preheat treatment.

曝光步驟係藉由照射活性光線而所照射之部分的感光性樹脂層被硬化,藉此硬化物而固定導電層,於基材上形成導電膜。活性光線之光源係可使用公知之光源、例如碳弧燈、水銀蒸氣弧燈、超高壓水銀燈、高壓水銀燈、氙燈等之有效地放射紫外線、可見光等者。可使用Ar離子雷射、半導體雷射等有效地放射紫外線、可見光等者。進一步,亦可使用照相用泛光電燈泡、太陽燈等有效地放射可見光等者。In the exposure step, the photosensitive resin layer irradiated with the active light is cured, whereby the conductive layer is fixed by the cured material, and a conductive film is formed on the substrate. As the light source of the active light, a known light source such as a carbon arc lamp, a mercury vapor arc lamp, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a xenon lamp or the like can be used to efficiently emit ultraviolet rays, visible light or the like. It is possible to effectively emit ultraviolet rays, visible light, or the like using an Ar ion laser or a semiconductor laser. Further, it is also possible to use a photographic light-emitting bulb, a solar lamp, or the like to efficiently emit visible light or the like.

導電層上之薄膜支持體對於活性光線為透明時,可通過薄膜支持體而照射活性光線,支持體為遮光性時,除去薄膜支持體後,對感光性樹脂層照射活性光線。When the film support on the conductive layer is transparent to the active light, the active light can be irradiated through the film support, and when the support is light-shielding, the photosensitive resin layer is irradiated with the active light after the film support is removed.

又,基材係對於活性光線為透明時,可從基材側通過基材而照射活性光線,但就解析度之點,宜從導電層側對導電層及感光性樹脂層照射活性光線。Further, when the substrate is transparent to the active light, the active light can be irradiated from the substrate side through the substrate. However, in terms of resolution, it is preferable to irradiate the conductive layer and the photosensitive resin layer with the active light from the conductive layer side.

藉由經過上述之步驟,可得到於基材上具備導電膜之附導電膜的基材。在本實施形態之導電膜的形成方法中,係使所形成之導電膜,薄膜支持體剝離後,依需要而藉由60~250℃左右的加熱或0.2~10J/cm2之曝光,進一步硬化。亦可進行加熱或曝光之兩者,進一步進行硬化。By the above steps, a substrate having a conductive film attached to a conductive film on a substrate can be obtained. In the method for forming a conductive film according to the present embodiment, after the formed conductive film and the film support are peeled off, if necessary, further heating is performed by heating at about 60 to 250 ° C or exposure of 0.2 to 10 J/cm 2 . . It is also possible to perform further hardening by heating or exposure.

如此地,若依本發明之導電膜的形成方法,可於玻璃或塑膠等基板上容易地形成透明的導電膜。As described above, according to the method for forming a conductive film of the present invention, a transparent conductive film can be easily formed on a substrate such as glass or plastic.

其次,一邊參照圖面,一邊說明有關本發明之導電圖型的形成方法。Next, a method of forming a conductive pattern according to the present invention will be described with reference to the drawings.

本實施形態之導電圖型的形成方法係具備如下步驟的方法:積層步驟,使上述感光性導電薄膜10於基材20上積層成感光性樹脂層3密著(圖2之(a));曝光步驟,對基材20上之感光性樹脂層3之特定部分照射活性光線(圖2之(b));顯像步驟,藉由使所曝光之感光性樹脂層3進行顯像,形成導電圖型。藉由經過此等之步驟,可得到於基材20上被圖型化之導電膜(導電圖型)2a的附導電膜之基板40(圖2之(c))。The method for forming a conductive pattern according to the present embodiment includes a method of laminating a step of laminating the photosensitive conductive film 10 on the substrate 20 to form a photosensitive resin layer 3 (Fig. 2(a)); In the exposure step, a specific portion of the photosensitive resin layer 3 on the substrate 20 is irradiated with active light (Fig. 2 (b)); a developing step is performed by developing the exposed photosensitive resin layer 3 to form a conductive Graphic type. By the above steps, the substrate 40 with the conductive film of the conductive film (conductive pattern) 2a patterned on the substrate 20 can be obtained ((c) of FIG. 2).

積層步驟係例如使感光性導電薄膜10當有保護薄膜時除去其之後,一邊加熱一邊使感光性樹脂層3側壓接於基材之層合方法來進行。又,此作業係從密著性及追蹤性之觀點,宜在減壓下層合。感光性導電薄膜10之層合係宜使感光性樹脂層3及/或基板20加熱至70~130℃,壓接壓力宜為0.1~1.0MPa左右(約1~10kgf/cm2),但於此等之條件係無特別限制。又,若使感光性樹脂層3如上述般加熱至70~130℃,不須預先預熱處理基板,但為進--步提昇層合性,亦可進行基板之預熱處理。The lamination step is performed, for example, by removing the photosensitive conductive film 10 as a protective film, and then laminating the photosensitive resin layer 3 side to the substrate while heating. Moreover, this operation is preferably laminated under reduced pressure from the viewpoint of adhesion and traceability. Preferably, the photosensitive conductive film 10 is laminated to heat the photosensitive resin layer 3 and/or the substrate 20 to 70 to 130 ° C, and the pressure of the bonding is preferably about 0.1 to 1.0 MPa (about 1 to 10 kgf/cm 2 ). These conditions are not particularly limited. Further, when the photosensitive resin layer 3 is heated to 70 to 130 ° C as described above, it is not necessary to preheat the substrate in advance, but the substrate may be preheated in order to improve the lamination property.

在曝光步驟之曝光方法係可舉例如通過被稱為藝術品之負或正掩罩圖型而呈圖像狀照射活性光線之方法(掩罩曝光法)。活性光線之光源係可使用公知之光源、例如碳弧燈、水銀蒸氣弧燈、超高壓水銀燈、高壓水銀燈、氙燈等之有效地放射紫外線、可見光等者。可使用Ar離子雷射、半導體雷射等有效地放射紫外線、可見光等者。進一步,亦可使用照相用泛光電燈泡、太陽燈等有效地放射可見光等者。又,亦可採用使用雷射曝光法等之直接描繪法,呈圖像狀照射活性光線之方法。The exposure method in the exposure step is, for example, a method of irradiating active rays in an image form by a negative or positive mask pattern called a artwork (mask exposure method). As the light source of the active light, a known light source such as a carbon arc lamp, a mercury vapor arc lamp, an ultrahigh pressure mercury lamp, a high pressure mercury lamp, a xenon lamp or the like can be used to efficiently emit ultraviolet rays, visible light or the like. It is possible to effectively emit ultraviolet rays, visible light, or the like using an Ar ion laser or a semiconductor laser. Further, it is also possible to use a photographic light-emitting bulb, a solar lamp, or the like to efficiently emit visible light or the like. Further, a method of irradiating the active light in an image form by a direct drawing method such as a laser exposure method may be employed.

導電層2上之薄膜支持體1對於活性光線為透明時,可通過薄膜支持體1而照射活性光線,薄膜支持體1為遮光性時,除去薄膜支持體1後,對感光性樹脂層3照射活性光線。When the film support 1 on the conductive layer 2 is transparent to the active light, the active light can be irradiated through the film support 1, and when the film support 1 is light-shielding, the photosensitive resin layer 3 is irradiated after the film support 1 is removed. Active light.

又,基板(被黏物)20係對於活性光線為透明時,可從基板20側通過基板20而照射活性光線,但就解析度之點,宜從導電層2側對導電層2及感光性樹脂層3照射活性光線。Further, when the substrate (adhered matter) 20 is transparent to the active light, the active light can be irradiated from the substrate 20 side through the substrate 20, but the conductive layer 2 and the photosensitive layer are preferably from the conductive layer 2 side in terms of resolution. The resin layer 3 irradiates the active light.

在本實施形態的顯像步驟中係可除去感光性樹脂層3之曝光部以外之部分。具體上,於導電層2上存在薄膜支持體1時,首先除去薄膜支持體1,其後,藉濕式顯像,除去感光性樹脂層3之曝光部以外之部分。藉此,於具有特定之圖型的樹脂硬化層3a上殘留含有有機導電材料之導電層2a,可形成導電圖型。In the developing step of the present embodiment, portions other than the exposed portion of the photosensitive resin layer 3 can be removed. Specifically, when the film support 1 is present on the conductive layer 2, the film support 1 is first removed, and then the portion other than the exposed portion of the photosensitive resin layer 3 is removed by wet development. Thereby, the conductive layer 2a containing the organic conductive material remains on the resin hardened layer 3a having a specific pattern, and a conductive pattern can be formed.

濕式顯像係可使用對應於例如鹼性水溶液、水系顯像液、有機溶劑系顯像液等之感光性樹脂之顯像液,藉噴灑、搖動浸漬、刷塗、擦摩等公知的方法。As the wet development system, a development liquid corresponding to a photosensitive resin such as an alkaline aqueous solution, an aqueous developing solution, or an organic solvent-based developing liquid can be used, and a known method such as spraying, shaking, brushing, rubbing or the like can be used. .

顯像液係可使用鹼性水溶液等之安全且安定,操作性良好者。上述鹼性水溶液之鹼係可使用例如鋰、鈉、或鉀之氫氧化物等的氫氧化鹼、鋰、鈉、鉀或銨等之碳酸鹽或重碳酸鹽等之碳酸鹼、磷酸鉀、磷酸鈉等之鹼金屬磷酸鹽、焦磷酸鈉、焦磷酸鉀等之鹼金屬焦磷酸鹽等。The developing liquid system can be safe and stable using an alkaline aqueous solution or the like, and has good workability. As the base of the alkaline aqueous solution, for example, an alkali hydroxide such as lithium, sodium or potassium hydroxide, or a carbonate or bicarbonate such as lithium, sodium, potassium or ammonium carbonate, potassium phosphate or phosphoric acid can be used. An alkali metal pyrophosphate such as an alkali metal phosphate such as sodium, sodium pyrophosphate or potassium pyrophosphate.

又,使用於顯像之鹼性水溶液,宜為0.1~5質量%碳酸鈉水溶液、0.1~5質量%碳酸鉀水溶液、0.1~5質量%氫氧化鈉水溶液、0.1~5質量%四硼酸鈉水溶液等。又,使用於顯像之鹼性水溶液之pH宜為9~11之範圍,其溫度係符合感光性樹脂層之顯像性而調節。又,於鹼性水溶液中係亦可混入表面活性劑、消泡劑、用以促進顯像之少量的有機溶劑等。Further, the alkaline aqueous solution used for development is preferably 0.1 to 5% by mass of sodium carbonate aqueous solution, 0.1 to 5% by mass of potassium carbonate aqueous solution, 0.1 to 5% by mass of sodium hydroxide aqueous solution, and 0.1 to 5% by mass of sodium tetraborate aqueous solution. Wait. Further, the pH of the aqueous alkaline solution used for development is preferably in the range of 9 to 11, and the temperature is adjusted in accordance with the developability of the photosensitive resin layer. Further, a surfactant, an antifoaming agent, a small amount of an organic solvent for promoting development, and the like may be mixed in the alkaline aqueous solution.

又,可使用水或鹼性水溶液與一種以上之有機溶劑所構成的水系顯像液。此處,於鹼性水溶液所含有之鹼,係於上述之鹼以外,可舉例如硼砂或偏矽酸鈉、氫氧化四甲基銨、乙醇胺、乙二胺、二乙基三胺、2-胺基-2-羥基甲基-1,3-丙二醇、1,3-二胺基丙醇-2、嗎啉。Further, a water-based developing solution composed of water or an aqueous alkaline solution and one or more organic solvents can be used. Here, the base contained in the alkaline aqueous solution may be, for example, borax or sodium metasilicate, tetramethylammonium hydroxide, ethanolamine, ethylenediamine, diethyltriamine or 2-, in addition to the above-mentioned base. Amino-2-hydroxymethyl-1,3-propanediol, 1,3-diaminopropanol-2, morpholine.

有機溶劑係可舉例如3-丙酮醇、丙醇、醋酸乙酯、具有碳數1~4之烷氧基的烷氧基乙醇、乙基醇、異丙基醇、丁基醇、二乙二醇單甲基醚、二乙二醇單乙基醚、二乙二醇單丁基醚。此等係可一種單獨使用或組合兩種以上而使用。Examples of the organic solvent include 3-acetone alcohol, propanol, ethyl acetate, alkoxyethanol having an alkoxy group having 1 to 4 carbon atoms, ethyl alcohol, isopropyl alcohol, butyl alcohol, and diethylene glycol. Alcohol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether. These may be used alone or in combination of two or more.

水系顯像液宜使有機溶劑之濃度為2~90質量%,其溫度可符合顯像性而調整。進一步,水系顯像液之pH係宜在光阻可充分顯像之範圍宜儘可能地小,宜為pH8~12,更宜為pH9~10。又,在水系顯像液中亦可添加少量界面活性劑、消泡劑等。The water-based imaging liquid should have a concentration of the organic solvent of 2 to 90% by mass, and the temperature can be adjusted in accordance with the developing property. Further, the pH of the water-based imaging liquid is preferably as small as possible in the range in which the photoresist can be sufficiently imaged, and is preferably pH 8 to 12, more preferably pH 9 to 10. Further, a small amount of a surfactant, an antifoaming agent, or the like may be added to the aqueous developing solution.

有機溶劑系顯像液可舉例如1,1,1-三氯乙烷、N-甲基吡咯烷酮、N,N-二甲基甲醯胺、環己酮、甲基異丁基酮、γ-丁內酯等。此等之有機溶劑係為防止引火,宜在1~20質量%之範圍添加水。The organic solvent-based developing solution may, for example, be 1,1,1-trichloroethane, N-methylpyrrolidone, N,N-dimethylformamide, cyclohexanone, methyl isobutyl ketone or γ- Butyrolactone and the like. These organic solvents are intended to prevent ignition, and it is preferred to add water in the range of 1 to 20% by mass.

上述之顯像液依需要亦可併用2種以上。The above-mentioned developing liquid may be used in combination of two or more kinds as needed.

顯像之方式,可舉例如浸漬方式、槳式方式、噴塗方式、刷塗、擦摩等。此等之中,就提昇解析度之觀點,宜使用高壓噴塗方式。Examples of the development method include an immersion method, a paddle method, a spray method, a brush coating, and rubbing. Among these, the viewpoint of improving the resolution is preferably a high pressure spraying method.

在本實施形態中,使以特定之圖型曝光後的感光性樹脂層3進行顯像而除去未曝光部分,俾未曝光部分之感光性樹脂層上的導電層係一起被除去,曝光部分之感光性樹脂層上的導電層殘留,可形成導電圖型。顯像時係顯像液滲入導電層2,使未曝光之感光性樹脂層膨潤,或從感光性樹脂層之端部滲入顯像液,感光性樹脂層膨潤,俾感光性樹脂層會溶解、分散而形成圖型。導電層2之層厚薄至0.5μm時,顯像液介由導電層2而易到達感光性樹脂層3,顯像性提高。In the present embodiment, the photosensitive resin layer 3 exposed in a specific pattern is developed to remove the unexposed portion, and the conductive layer on the photosensitive resin layer of the unexposed portion is removed together, and the exposed portion is removed. The conductive layer on the photosensitive resin layer remains, and a conductive pattern can be formed. When developing, the developing solution penetrates into the conductive layer 2, swells the unexposed photosensitive resin layer, or infiltrates the developing liquid from the end portion of the photosensitive resin layer, swells the photosensitive resin layer, and dissolves the photosensitive resin layer. Disperse to form a pattern. When the layer thickness of the conductive layer 2 is as small as 0.5 μm, the developing liquid easily reaches the photosensitive resin layer 3 via the conductive layer 2, and the developability is improved.

在本實施形態的導電圖型的形成方法中係顯像後依需要而藉由60~250℃左右的加熱或0.2~10J/cm2之曝光,進一步使導電圖型硬化。亦可進行加熱或曝光之兩者,進一步進行硬化。In the method of forming a conductive pattern of the present embodiment, the conductive pattern is further cured by heating at about 60 to 250 ° C or exposure at 0.2 to 10 J/cm 2 as needed. It is also possible to perform further hardening by heating or exposure.

如此地,若依本發明之導電圖型的形成方法,可如ITO等之無機膜般不形成蝕刻光阻而於玻璃或塑膠等基板上容易地形成透明的導電圖型。As described above, according to the method for forming a conductive pattern of the present invention, a transparent conductive pattern can be easily formed on a substrate such as glass or plastic without forming an etching photoresist like an inorganic film such as ITO.

本發明之附導電膜的基板係可藉由上述導電膜之形成方法或導電圖型之形成方法來得到,但從可有效地活用作為透明電極之觀點,宜導電膜或導電圖型之表面電阻率為10000Ω/□以下,更宜為5000Ω/□以下,尤宜為2000Ω/□以下。表面阻抗率係可藉由含有有機導電材料之分散液的濃度或塗佈量而調整。愈提高分散液之濃度,又,愈增多塗佈量而增多厚度等,有表面阻抗率愈低之傾向。又,亦可藉由摻雜處理而調整。The substrate with a conductive film of the present invention can be obtained by the above-described method for forming a conductive film or a method for forming a conductive pattern, but from the viewpoint of effectively utilizing as a transparent electrode, it is preferable to have a surface resistance of a conductive film or a conductive pattern. The rate is 10000 Ω/□ or less, more preferably 5,000 Ω/□ or less, and particularly preferably 2,000 Ω/□ or less. The surface resistivity can be adjusted by the concentration or coating amount of the dispersion containing the organic conductive material. As the concentration of the dispersion is increased, the coating amount is increased and the thickness is increased, and the surface resistivity tends to be lower. Moreover, it can also be adjusted by a doping process.

以上,說明有關本發明之適當的實施形態,但本發明係不限定於此等。Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto.

實施例Example

以下,藉實施例更具體地說明本發明。Hereinafter, the present invention will be more specifically described by way of examples.

<導電層形成用塗液之調整><Adjustment of coating liquid for forming a conductive layer> (導電層形成用塗液1(有機導電材料溶液)(coating liquid 1 for forming a conductive layer (organic conductive material solution)

使聚乙烯二氧噻吩之醇溶液的「SEPLEGYDA OC-U1」(信越聚合物股份公司製、光圖型化塗料、商品名)以甲醇稀釋成10倍,以此作為導電層形成用塗液1。"SEPLEGYDA OC-U1" (manufactured by Shin-Etsu Polymer Co., Ltd., photo-patterning paint, trade name) of the alcohol solution of polyethylene dioxythiophene was diluted 10 times with methanol to prepare a coating liquid for forming a conductive layer. .

(導電層形成用塗液2(有機導電材料溶液)(coating liquid 2 for forming a conductive layer (organic conductive material solution)

使聚乙烯二氧噻吩之水溶液的「Crebios P」(H.C.Starck公司製、商品名)以水稀釋成5倍,以此作為導電層形成用塗液2。"Crebios P" (manufactured by H. C. Starck Co., Ltd., trade name) of an aqueous solution of polyethylene dioxythiophene was diluted with water to obtain a coating liquid 2 for forming a conductive layer.

<感光性樹脂組成物的溶液之調製><Preparation of Solution of Photosensitive Resin Composition> [丙烯酸樹脂之合成][Synthesis of acrylic resin]

於具備攪拌機、回流冷卻器、溫度計、滴下漏斗及氮氣導入管之燒瓶中,加入甲基溶纖劑與甲苯之混合液(甲基溶纖劑/甲苯=3/2(質量比)、以下,稱為「溶液s」)400g,一邊吹入氮氣一邊攪拌,加熱至80℃。另外,準備混合有作為單體之(甲基)丙烯酸100g、甲基丙烯酸甲酯250g、丙烯酸乙酯100g及苯乙烯50g、偶氮雙異丁腈0.8g之溶液(以下,稱為「溶液a」)。然後,於加熱至80℃之溶液s中花4小時滴入溶液a後,一邊以80℃攪拌,一邊保溫2小時。進一步,於100g之溶液s中溶解有偶氟雙異丁腈1.2g之溶液花10分鐘而滴入於燒瓶內。繼而,一邊攪拌滴下後之溶液一邊以80℃保溫3小時,花30分鐘而加熱至90℃。以90℃保溫2小時後,冷卻而得到黏合劑聚合物溶液。於此黏合劑聚合物溶液中,加入丙酮而調製成不揮發成分(固形分)為50質量%,得到黏合劑聚合物溶液。所得到之黏合劑聚合物的重量平均分子量為80000。以此作為丙烯酸聚合物A。A mixture of methyl cellosolve and toluene (methyl cellosolve/toluene=3/2 (mass ratio), or less, is added to a flask equipped with a stirrer, a reflux condenser, a thermometer, a dropping funnel, and a nitrogen introduction tube. 400 g, which is called "solution s"), was stirred while blowing nitrogen gas, and heated to 80 °C. Further, a solution of 100 g of (meth)acrylic acid as a monomer, 250 g of methyl methacrylate, 100 g of ethyl acrylate, 50 g of styrene, and 0.8 g of azobisisobutyronitrile (hereinafter referred to as "solution a" is prepared. "). Then, the solution a was added dropwise to the solution s heated to 80 ° C for 4 hours, and then kept at 80 ° C for 2 hours while stirring. Further, a solution of 1.2 g of fluorobisisobutyronitrile dissolved in 100 g of the solution s was dropped for 10 minutes in the flask. Then, the solution after the dropwise addition was stirred while maintaining the temperature at 80 ° C for 3 hours, and heated to 90 ° C for 30 minutes. After holding at 90 ° C for 2 hours, it was cooled to obtain a binder polymer solution. To the binder polymer solution, acetone was added to prepare a nonvolatile component (solid content) to be 50% by mass to obtain a binder polymer solution. The resulting binder polymer had a weight average molecular weight of 80,000. This was taken as the acrylic polymer A.

使表1所示之材料以同表所示之調配量(單元:質量份)調配,調製感光性樹脂組成物的溶液。The materials shown in Table 1 were prepared by mixing the amounts shown in the same table (unit: parts by mass) to prepare a solution of the photosensitive resin composition.

<感光性導電薄膜之製作><Production of photosensitive conductive film> (實施例1)(Example 1)

使導電層形成用塗液1以25g/m2均一地塗佈於支持薄膜(薄膜支持體)的50μm厚之聚對苯二甲酸乙二酯薄膜(PET薄膜、帝人股份公司製、商品名「G2-50」)上,以100℃之熱風對流式乾燥機乾燥3分鐘,形成導電層。又,導電層之乾燥後的膜厚為約0.1μm。A 50 μm-thick polyethylene terephthalate film (PET film, manufactured by Teijin Co., Ltd., trade name) in which the coating liquid for forming a conductive layer 1 was uniformly applied to a support film (film support) at 25 g/m 2 On G2-50"), it was dried by a hot air convection dryer at 100 ° C for 3 minutes to form a conductive layer. Further, the film thickness after drying of the conductive layer was about 0.1 μm.

然後,於設有支持薄膜之導電層側,均一地塗佈上述感光性樹脂組成物之溶液,以100℃之熱風對流式乾燥機乾燥10分鐘,形成感光性樹脂層。感光性樹脂層之乾燥後的膜厚為約5μm。進一步,感光性樹脂層以聚乙烯製的保護薄膜(Tamapoly股份公司製、商品名「NF-13」)被覆,得到感光性導電薄膜。Then, a solution of the above-mentioned photosensitive resin composition was uniformly applied to the side of the conductive layer provided with the support film, and dried by a hot air convection dryer at 100 ° C for 10 minutes to form a photosensitive resin layer. The film thickness after drying of the photosensitive resin layer was about 5 μm. Further, the photosensitive resin layer was coated with a protective film made of polyethylene (manufactured by Tamapoly Co., Ltd., trade name "NF-13") to obtain a photosensitive conductive film.

(實施例2)(Example 2)

使導電層形成用塗液2以25g/m2均一地塗佈於支持薄膜的50μm厚之聚對苯二甲酸乙二酯薄膜(PET薄膜、帝人股份公司製、商品名「G2-50」)上,以100℃之熱風對流式乾燥機乾燥3分鐘,形成導電層。又,乾燥後的導電層之膜厚為約0.1μm。A 50 μm-thick polyethylene terephthalate film (PET film, manufactured by Teijin Co., Ltd., trade name "G2-50") which was uniformly applied to a support film at 25 g/m 2 in a coating liquid for forming a conductive layer 2 The upper layer was dried by a hot air convection dryer at 100 ° C for 3 minutes to form a conductive layer. Further, the film thickness of the dried conductive layer was about 0.1 μm.

然後,於設有支持薄膜之導電層側,均一地塗佈上述感光性樹脂組成物之溶液,以100℃之熱風對流式乾燥機乾燥10分鐘,形成感光性樹脂層。感光性樹脂層之乾燥後的膜厚為約5μm。進一步,感光性樹脂層以聚乙烯製的保護薄膜(Tamapoly股份公司製、商品名「NF-13」)被覆,得到感光性導電薄膜。Then, a solution of the above-mentioned photosensitive resin composition was uniformly applied to the side of the conductive layer provided with the support film, and dried by a hot air convection dryer at 100 ° C for 10 minutes to form a photosensitive resin layer. The film thickness after drying of the photosensitive resin layer was about 5 μm. Further, the photosensitive resin layer was coated with a protective film made of polyethylene (manufactured by Tamapoly Co., Ltd., trade name "NF-13") to obtain a photosensitive conductive film.

<導電膜之形成><Formation of Conductive Film>

使0.7mm厚的鈉玻璃板加溫至80℃,於其表面上使實施例1、2所得到的感光性導電薄膜,一邊剝離保護薄膜一邊使感光性樹脂層對向於基板,以120℃、0.4MPa的條件積層。積層後,冷卻基板,在基板之溫度成為23℃之時點,對PET薄膜面使用具有高壓水銀燈之曝光機(股份公司OAK製作所製、商品名「HMW-201B」),以1000mJ/cm2之曝光量使導電層及感光性樹脂層曝光。曝光後,在室溫(25℃)下放置15分鐘,繼而,剝離支持體之PET薄膜,使實施例所製作之導電膜形成於鈉玻璃板上。使用實施例1、2之薄膜,所形成者之表面阻抗分別為2000Ω/□。2800Ω/□,對於650nm之光的透過率為90%、85%。結果表示於表1中。The 0.7 mm thick soda glass plate was heated to 80 ° C, and the photosensitive conductive films obtained in Examples 1 and 2 were placed on the surface thereof, and the photosensitive resin layer was faced to the substrate while peeling off the protective film at 120 ° C. , 0.4MPa conditional layering. After laminating, the substrate was cooled, and when the temperature of the substrate was 23 ° C, an exposure machine having a high-pressure mercury lamp (trade name "HMW-201B" manufactured by OAK Co., Ltd.) was used for the PET film surface, and exposed at 1000 mJ/cm 2 . The conductive layer and the photosensitive resin layer were exposed in an amount. After the exposure, the film was allowed to stand at room temperature (25 ° C) for 15 minutes, and then the PET film of the support was peeled off, and the conductive film produced in the example was formed on a soda glass plate. Using the films of Examples 1 and 2, the surface resistance of the formed ones was 2000 Ω/□. 2800 Ω / □, the transmittance for light of 650 nm is 90%, 85%. The results are shown in Table 1.

又,上述之表面阻抗係使用低阻抗率計(三菱化學股份公司製、Loresta GP),依4探針法以JIS K 7194所測定的表面阻抗率。又,上述之透過率係使用分光光度計(股份公司日立High technologies製、商品名「U-3310」)而測定,為450~650nm之波長區域的最小光透過率。結果表示於表1中。In addition, the surface impedance is a surface resistivity measured by a four-probe method in accordance with JIS K 7194 using a low-impedance meter (Loresta GP, manufactured by Mitsubishi Chemical Corporation). In addition, the transmittance is measured by a spectrophotometer (manufactured by Hitachi High-Tech Co., Ltd., trade name "U-3310"), and is a minimum light transmittance in a wavelength region of 450 to 650 nm. The results are shown in Table 1.

<導電圖型之形成><Formation of Conductive Pattern>

使1mm厚的聚碳酸酯基板加溫至80℃,於其表面上使實施例1、2所得到的感光性導電薄膜,一邊剝離保護薄膜一邊使感光性樹脂層對向於基板,以120℃、0.4MPa的條件積層。積層後,冷卻基板,在基板之溫度成為23℃之時點,對支持體之PET薄膜面使線寬/線距寬約為100/100μm且長度具有100mm之配線圖型的光罩密接。繼而使用具有高壓水銀燈之曝光機(股份公司OAK製作所製、商品名「HMW-201B」),以200mJ/cm2之曝光量使導電層及感光性樹脂層曝光。The polycarbonate substrate having a thickness of 1 mm was heated to 80 ° C, and the photosensitive conductive films obtained in Examples 1 and 2 were placed on the surface thereof, and the photosensitive resin layer was faced to the substrate while peeling off the protective film at 120 ° C. , 0.4MPa conditional layering. After lamination, the substrate was cooled, and when the temperature of the substrate was 23 ° C, the PET film surface of the support was adhered to a mask having a line width/line width of about 100/100 μm and a length of 100 mm. Then, an exposure machine having a high-pressure mercury lamp (manufactured by OAK Co., Ltd., trade name "HMW-201B") was used, and the conductive layer and the photosensitive resin layer were exposed at an exposure amount of 200 mJ/cm 2 .

曝光後,在室溫(25℃)下放置15分鐘,繼而,剝離支持體之PET薄膜,以30℃使1質量%碳酸鈉水溶液噴塗30秒以進行顯像。顯像後,線寬/線距寬約為100/100μm之導電圖型形成於聚碳酸酯基板上。確認出各別之導電圖型可良好地形成。After the exposure, the film was allowed to stand at room temperature (25 ° C) for 15 minutes, and then the PET film of the support was peeled off, and a 1% by mass aqueous sodium carbonate solution was sprayed at 30 ° C for 30 seconds for development. After development, a conductive pattern having a line width/line width of about 100/100 μm was formed on the polycarbonate substrate. It was confirmed that the respective conductive patterns were well formed.

1...薄膜支持體1. . . Film support

2...導電層2. . . Conductive layer

2a...導電圖型2a. . . Conductive pattern

3...感光性樹脂層3. . . Photosensitive resin layer

3a...硬化物層3a. . . Hardened layer

4...保護薄膜4. . . Protective film

10...感光性導電薄膜10. . . Photosensitive conductive film

20...基板20. . . Substrate

30...藝術品30. . . artwork

40...附導電膜之基板40. . . Substrate with conductive film

圖1係表示本發明之感光性導電薄膜的一實施形態的模式截面圖。Fig. 1 is a schematic cross-sectional view showing an embodiment of a photosensitive conductive film of the present invention.

圖2係用以說明本發明之導電圖型的形成方法之一實施形態的模式截面圖。Fig. 2 is a schematic cross-sectional view for explaining an embodiment of a method of forming a conductive pattern of the present invention.

1...薄膜支持體1. . . Film support

2...導電層2. . . Conductive layer

3...感光性樹脂層3. . . Photosensitive resin layer

4...保護薄膜4. . . Protective film

10...感光性導電薄膜10. . . Photosensitive conductive film

Claims (12)

一種轉印型感光性導電薄膜,其係具有由支持體、含有有機導電材料之導電層及感光性樹脂層依序層合而成之構造。 A transfer type photosensitive conductive film having a structure in which a support, a conductive layer containing an organic conductive material, and a photosensitive resin layer are laminated in this order. 如請求項1之轉印型感光性導電薄膜,其中前述有機導電材料為噻吩或噻吩衍生物之聚合物或苯胺或苯胺衍生物之聚合物。 The transfer type photosensitive conductive film of claim 1, wherein the organic conductive material is a polymer of a thiophene or a thiophene derivative or a polymer of an aniline or an aniline derivative. 如請求項1或請求項2之轉印型感光性導電薄膜,其中前述有機導電材料為噻吩衍生物之聚合物。 The transfer type photosensitive conductive film of claim 1 or claim 2, wherein the organic conductive material is a polymer of a thiophene derivative. 如請求項1或請求項2之轉印型感光性導電薄膜,其中前述感光性樹脂層係由含有黏合劑聚合物、具有乙烯性不飽和鍵結之光聚合性化合物、及光聚合起始劑之感光性樹脂組成物所構成者。 The transfer-type photosensitive conductive film of claim 1 or claim 2, wherein the photosensitive resin layer is a photopolymerizable compound containing a binder polymer, having an ethylenically unsaturated bond, and a photopolymerization initiator The composition of the photosensitive resin composition. 如請求項4之轉印型感光性導電薄膜,其中前述黏合劑聚合物具有羧基。 The transfer type photosensitive conductive film of claim 4, wherein the binder polymer has a carboxyl group. 如請求項4之轉印型感光性導電薄膜,其中前述具有乙烯性不飽和鍵之光聚合性化合物包括選自的群組中的至少一種三羥甲基丙烷(甲基)丙烯酸酯、四羥甲基甲烷(甲基)丙烯酸酯、季戊四醇(甲基)丙烯酸酯及二季戊四醇(甲基)丙烯酸酯。 The transfer type photosensitive conductive film of claim 4, wherein the photopolymerizable compound having an ethylenically unsaturated bond comprises at least one trimethylolpropane (meth) acrylate, tetrahydroxy group selected from the group consisting of Methyl methane (meth) acrylate, pentaerythritol (meth) acrylate, and dipentaerythritol (meth) acrylate. 如請求項4所述之轉印型感光性導電薄膜,其中前述光聚合起始劑包括芳香族酮化合物或肟酯化合物。 The transfer type photosensitive conductive film according to claim 4, wherein the photopolymerization initiator comprises an aromatic ketone compound or an oxime ester compound. 如請求項1或請求項2之轉印型感光性導電薄膜,其中在前述感光性樹脂層之與前述導電層側相反之側上更 層合有保護薄膜。 The transfer type photosensitive conductive film of claim 1 or claim 2, wherein a side of the photosensitive resin layer opposite to the side of the conductive layer is further A protective film is laminated. 一種導電膜之形成方法,其特徵為將如請求項1~8中任一項之轉印型感光性導電薄膜之前述感光性樹脂層貼附於基材上,且於該基材上至少依序層合前述感光性樹脂層及前述導電層,並將經層合之前述感光性樹脂層曝光。 A method of forming a conductive film, wherein the photosensitive resin layer of the transfer-type photosensitive conductive film according to any one of claims 1 to 8 is attached to a substrate, and at least The photosensitive resin layer and the conductive layer are laminated in this order, and the laminated photosensitive resin layer is exposed. 一種導電圖型之形成方法,其特徵為將如請求項1~8中任一項轉印型感光性導電薄膜之前述感光性樹脂層貼附於基材,於該基材上將至少依序層合前述感光性樹脂層及前述導電層,並將經層合之前述感光性樹脂層曝光、顯像。 A method of forming a conductive pattern, wherein the photosensitive resin layer of the transfer type photosensitive conductive film according to any one of claims 1 to 8 is attached to a substrate, and the substrate is at least sequentially The photosensitive resin layer and the conductive layer are laminated, and the laminated photosensitive resin layer is exposed and developed. 一種導電膜基板,其係具備基板與於該基板上藉由如請求項9之導電膜之形成方法所形成之導電膜。 A conductive film substrate comprising a substrate and a conductive film formed on the substrate by a method of forming a conductive film according to claim 9. 一種導電膜基板,其係具備基板與於該基板上藉由如請求項10之導電圖型之形成方法所形成之導電圖型。A conductive film substrate comprising a substrate and a conductive pattern formed on the substrate by a method of forming a conductive pattern as claimed in claim 10.
TW100116765A 2010-05-13 2011-05-13 A photosensitive conductive thin film, a method for forming a conductive film, and a method for forming a conductive pattern TWI547756B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010111064 2010-05-13

Publications (2)

Publication Number Publication Date
TW201214032A TW201214032A (en) 2012-04-01
TWI547756B true TWI547756B (en) 2016-09-01

Family

ID=44914415

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100116765A TWI547756B (en) 2010-05-13 2011-05-13 A photosensitive conductive thin film, a method for forming a conductive film, and a method for forming a conductive pattern

Country Status (5)

Country Link
JP (2) JP5582189B2 (en)
KR (4) KR20120120372A (en)
CN (2) CN108008602A (en)
TW (1) TWI547756B (en)
WO (1) WO2011142360A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9253892B2 (en) * 2012-04-13 2016-02-02 Wistron Corporation Peripheral circuit of touch panel and manufacturing method thereof
WO2014199802A1 (en) * 2013-06-11 2014-12-18 コニカミノルタ株式会社 Method for manufacturing organic electroluminescent element
CN103433189A (en) * 2013-09-02 2013-12-11 中环高科(天津)股份有限公司 Process for forming film on surface of PET (Polyethylene Terephthalate) substrate by adopting conductive macromolecular coating
CN104375382A (en) * 2014-03-31 2015-02-25 中能柔性光电(滁州)有限公司 Graphical manufacturing method for flexible conducting film
KR20170041809A (en) * 2014-08-07 2017-04-17 사빅 글로벌 테크놀러지스 비.브이. Conductive multilayer sheet for thermal forming applications
JP6027633B2 (en) * 2015-01-13 2016-11-16 日本写真印刷株式会社 Method for manufacturing touch input sensor and photosensitive conductive film
CN107430336B (en) 2015-04-21 2019-06-11 东丽株式会社 The manufacturing method of conductive pattern forming member
CN107093494B (en) * 2017-03-22 2021-07-13 中山大学 Transferable patterned conductive film and preparation and patterning method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003346575A (en) * 2002-05-29 2003-12-05 Konica Minolta Holdings Inc Process for forming conductive pattern
CN1940723A (en) * 2005-09-28 2007-04-04 旭化成电子材料元件株式会社 Photosensitive resin composition and laminating article thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4122889B2 (en) * 2002-08-08 2008-07-23 コニカミノルタホールディングス株式会社 Conductive path or electrode and method for forming them
JP4281324B2 (en) * 2002-10-23 2009-06-17 コニカミノルタホールディングス株式会社 ORGANIC THIN FILM TRANSISTOR DEVICE, ITS MANUFACTURING METHOD, AND ORGANIC THIN FILM TRANSISTOR SHEET
JP4666961B2 (en) * 2004-06-29 2011-04-06 Tdk株式会社 Object provided with transparent conductive layer, and conductive film for transfer
CN101297242A (en) * 2005-10-25 2008-10-29 日立化成工业株式会社 Photosensitive resin composition, photosensitive element comprising the same, method of forming resist pattern, and process for producing printed wiring board
CN101075090A (en) * 2006-05-19 2007-11-21 旭化成电子材料元件株式会社 Dry film corrosion resisting agent
JP4258532B2 (en) * 2006-06-30 2009-04-30 カシオ計算機株式会社 Thin film device substrate and manufacturing method thereof
JP4826803B2 (en) * 2007-03-20 2011-11-30 Jsr株式会社 Radiation-sensitive resin composition, spacer for liquid crystal display element and production method thereof
JP5588597B2 (en) * 2007-03-23 2014-09-10 富士フイルム株式会社 Manufacturing method and manufacturing apparatus of conductive material
JP5277679B2 (en) * 2007-03-30 2013-08-28 日立化成株式会社 Photosensitive resin composition, photosensitive element, resist pattern forming method and printed wiring board manufacturing method
CN101486837A (en) * 2008-01-18 2009-07-22 郑州泰达电子材料科技有限公司 Conductive macromolecular solution, conductive polymer coated film and solid electrolyte
CN102124529B (en) * 2008-08-22 2014-11-05 日立化成株式会社 Photosensitive conductive film, method for forming conductive film, method for forming conductive pattern, and conductive film substrate
JP5569144B2 (en) * 2010-02-24 2014-08-13 日立化成株式会社 Photosensitive conductive film, method for forming conductive film, and method for forming conductive pattern

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003346575A (en) * 2002-05-29 2003-12-05 Konica Minolta Holdings Inc Process for forming conductive pattern
CN1940723A (en) * 2005-09-28 2007-04-04 旭化成电子材料元件株式会社 Photosensitive resin composition and laminating article thereof

Also Published As

Publication number Publication date
WO2011142360A1 (en) 2011-11-17
TW201214032A (en) 2012-04-01
JP2014199814A (en) 2014-10-23
KR20160052754A (en) 2016-05-12
KR20150061006A (en) 2015-06-03
JP5871029B2 (en) 2016-03-01
JP5582189B2 (en) 2014-09-03
KR20120120372A (en) 2012-11-01
JPWO2011142360A1 (en) 2013-07-22
CN108008602A (en) 2018-05-08
KR101847364B1 (en) 2018-04-09
KR20170084345A (en) 2017-07-19
CN102859612A (en) 2013-01-02

Similar Documents

Publication Publication Date Title
TWI547756B (en) A photosensitive conductive thin film, a method for forming a conductive film, and a method for forming a conductive pattern
KR101316977B1 (en) Photosensitive conductive film, method for forming conductive film, method for forming conductive pattern, and conductive film substrate
JP2011054419A (en) Transparent electrode, organic electroluminescent element, and organic thin-film solar battery element
WO2011046011A1 (en) Transparent conductor film with barrier properties, manufacturing method thereof, and organic electroluminescence element and organic solar cell using the transparent conductor film with barrier properties
JP2009533251A (en) Method of manufacturing a confined layer and device manufactured using the same
JP5727368B2 (en) Apparatus and method for vapor phase coating in electronic devices
KR102689183B1 (en) Photosensitive resin composition, film and electronic device
KR102680126B1 (en) Negative photosensitive resin composition, film and electronic device
TW201115268A (en) Photosensitive resin composition, photosensitive element utilizing the composition, method for formation of resist pattern, and process for production of printed circuit board
JP5457337B2 (en) Method for manufacturing confinement layer
US11703759B2 (en) Transfer film, electrode protective film, laminate, capacitive input device, and manufacturing method of touch panel
KR102417834B1 (en) Egative photosensitive resin composition and electronic device having organic insulating film using same
JP2017156510A (en) Photosensitive conductive film, method for forming conductive pattern, conductive pattern substrate, and touch panel

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees