TWI545617B - Exhaust apparatus and substrate processing apparatus having the same - Google Patents

Exhaust apparatus and substrate processing apparatus having the same Download PDF

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TWI545617B
TWI545617B TW103129624A TW103129624A TWI545617B TW I545617 B TWI545617 B TW I545617B TW 103129624 A TW103129624 A TW 103129624A TW 103129624 A TW103129624 A TW 103129624A TW I545617 B TWI545617 B TW I545617B
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substrate
chamber
exhaust
processing apparatus
disposed
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TW103129624A
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TW201508813A (en
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沈亨基
金鍾明
白種化
金炳秀
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Ap系統股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67115Apparatus for thermal treatment mainly by radiation

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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)

Description

排氣設備和具有排氣設備的基板處理設備 Exhaust device and substrate processing device with exhaust device

本發明是有關於一種排氣設備和具有排氣設備的基板處理設備,且更明確地說,是有關於一種能夠容易地將副產物排出到腔室的外部的排氣設備和具有排氣設備的基板處理設備。 BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to an exhaust apparatus and a substrate processing apparatus having the same, and more particularly to an exhaust apparatus capable of easily discharging by-products to the outside of a chamber and having an exhaust apparatus. Substrate processing equipment.

近年來,因為已提高準分子雷射光束的穩定性和輸出,所以準分子雷射光束的使用範圍對處理半導體材料的處理已更加廣泛。 In recent years, the use of excimer laser beams has been more widely handled for processing semiconductor materials because the stability and output of excimer laser beams have been improved.

尤其是為了形成例如發光二極體(LED)等裝置,主要通過產生雷射光束的雷射處理設備來執行將薄膜與晶片基板分離的處理。此處理被稱作雷射剝離。(此處,圖1是用於描述相關技術中的雷射處理設備的視圖)。 In particular, in order to form a device such as a light emitting diode (LED), a process of separating a film from a wafer substrate is mainly performed by a laser processing apparatus that generates a laser beam. This process is called laser stripping. (Here, FIG. 1 is a view for describing a laser processing apparatus in the related art).

參看圖1,雷射處理設備1包含具有用於接納基板S的空間的腔室10,且氣體入口12和氣體出口14設置到腔室10,且傳輸視窗30安裝在腔室10的上端上。雷射光輻射構件50安裝在傳輸視窗30的上側上,且從雷射光輻射構件50輻射的雷射光束55 通過傳輸視窗30且到達腔室10中的基板。 Referring to Fig. 1, a laser processing apparatus 1 includes a chamber 10 having a space for receiving a substrate S, and a gas inlet 12 and a gas outlet 14 are provided to the chamber 10, and a transmission window 30 is mounted on the upper end of the chamber 10. The laser beam radiating member 50 is mounted on the upper side of the transmission window 30, and the laser beam 55 radiated from the laser beam radiating member 50 Through the transmission window 30 and reaching the substrate in the chamber 10.

圖2(a)、圖2(b)是用於描述從輻射構件50輻射的雷射光束55的形式的視圖,其中圖2(a)是基板的俯視圖且圖2(b)是基板的透視圖。如圖2(a)、圖2(b)所示,雷射光束55以線狀輻射在基板S上。基板S在垂直於雷射光束55的線的方向(箭頭方向)上移動,以執行雷射光束55對基板S的整個表面的輻射。 2(a) and 2(b) are views for describing a form of a laser beam 55 radiated from the radiation member 50, wherein Fig. 2(a) is a plan view of the substrate and Fig. 2(b) is a perspective view of the substrate Figure. As shown in FIGS. 2(a) and 2(b), the laser beam 55 is radiated on the substrate S in a line shape. The substrate S is moved in a direction (arrow direction) perpendicular to the line of the laser beam 55 to perform radiation of the laser beam 55 on the entire surface of the substrate S.

在完成此處理之後,圖3所示的排氣設備可通過腔室10的下部的側表面的氣體出口14a和14b來排出在處理的執行中產生的副產物P。然而,因為氣體出口形成在比設置基板的地點低的位置處,所以定位在基板的上部處的副產物不容易排出到腔室10的外部。因此,副產物保持在腔室內。且,因為副產物P通過自然迴圈而移動到出口並不容易,所以降低了腔室10的內部的清潔度。 After this processing is completed, the exhaust apparatus shown in FIG. 3 can discharge the by-product P generated in the execution of the process through the gas outlets 14a and 14b of the side surface of the lower portion of the chamber 10. However, since the gas outlet is formed at a position lower than the place where the substrate is disposed, by-products positioned at the upper portion of the substrate are not easily discharged to the outside of the chamber 10. Therefore, by-products remain in the chamber. Moreover, since the by-product P is not easily moved to the outlet by the natural loop, the cleanliness of the interior of the chamber 10 is lowered.

因此,所產生的副產物污染並且損壞其它配置元件,從而導致雷射處理設備的耐用性方面的降低。 As a result, the by-products produced contaminate and damage other configuration elements, resulting in a reduction in the durability of the laser processing apparatus.

此外,因為存在於基板的上部上的副產物由於設置出口的位置而不容易排出,所以完成處理的產品的品質可能最終降低。 Further, since the by-products present on the upper portion of the substrate are not easily discharged due to the position at which the outlet is provided, the quality of the finished product may eventually be lowered.

因此,在此之前已在真空中執行雷射處理設備的處理來移除腔室中的顆粒。然而,存在一個問題,其中在完成處理之後,用於提高處理的良率且中斷真空的氮氣的量由於在真空狀態下執行的處理而過多。此外,雖然在密封的氮氣氛圍中執行處理來防止外來顆粒的流入,但不容易移除腔室10內產生的副產物。 Therefore, the processing of the laser processing apparatus has been performed beforehand to remove particles in the chamber. However, there is a problem in that after the completion of the process, the amount of nitrogen for increasing the yield of the process and interrupting the vacuum is excessive due to the process performed in a vacuum state. Further, although the treatment is performed in a sealed nitrogen atmosphere to prevent the inflow of foreign particles, it is not easy to remove by-products generated in the chamber 10.

相關技術文獻Related technical literature 專利文獻 Patent literature

(專利文獻1)KR2004-0096317 A1 (Patent Document 1) KR2004-0096317 A1

本發明提供一種能夠容易地將在基板的處理過程中產生的副產物排出到腔室的外部的排氣設備和具有排氣設備的基板處理設備。 The present invention provides an exhaust apparatus capable of easily discharging by-products generated during processing of a substrate to the outside of the chamber and a substrate processing apparatus having the exhaust apparatus.

本揭露還提供能夠提高處理效率和生產率的排氣設備和具有排氣設備的基板處理設備。 The present disclosure also provides an exhaust apparatus capable of improving processing efficiency and productivity and a substrate processing apparatus having the exhaust apparatus.

本揭露還提供能夠提高處理設備的耐用性的排氣設備和具有排氣設備的基板處理設備。 The present disclosure also provides an exhaust device capable of improving the durability of the processing apparatus and a substrate processing apparatus having the exhaust device.

根據示範性實施例,一種基板處理設備包含:腔室,形成處理基板的內部空間;排氣裝置,將在基板的處理過程中產生的副產物排出到腔室的外部;基板支撐件,在所述腔室的所述內部空間中支撐所述基板;以及雷射產生單元,將雷射光束輻射到設置在所述基板支撐件上的所述基板上,其中所述排氣裝置包含排氣埠,所述排氣埠形成於除了所述腔室的上部和下部之外的側壁處,且以單個或多個設置到所述側壁。 According to an exemplary embodiment, a substrate processing apparatus includes: a chamber that forms an internal space of a processing substrate; an exhaust device that discharges by-products generated during processing of the substrate to an outside of the chamber; and a substrate support member The substrate is supported in the inner space of the chamber; and a laser generating unit radiates a laser beam onto the substrate disposed on the substrate support, wherein the exhaust device includes an exhaust gas The exhaust gas enthalpy is formed at a side wall other than the upper and lower portions of the chamber, and is provided to the side wall in a single or a plurality.

所述排氣埠可形成於所述腔室的除了所述腔室的所述上部或所述下部之外的整個側壁處,或形成於所述腔室的除了所述腔室的所述上部和所述下部以及形成進入口的側壁之外的整個側 壁處。 The exhaust gas enthalpy may be formed at an entire sidewall of the chamber other than the upper portion or the lower portion of the chamber, or formed in the upper portion of the chamber except the chamber And the entire side of the lower portion and the side wall forming the inlet opening At the wall.

以上排氣設備可還包含注射器,所述注射器具有設置在所述排氣埠的上側處且朝向下部注射氣體的注射噴嘴。 The above exhaust apparatus may further include a syringe having an injection nozzle disposed at an upper side of the exhaust port and injecting a gas toward the lower portion.

多個注射孔可形成於所述注射噴嘴處,且所述注射孔可形成為朝向腔室的側壁方向注射氣體。 A plurality of injection holes may be formed at the injection nozzle, and the injection holes may be formed to inject a gas toward a side wall of the chamber.

從所述雷射產生單元產生的雷射光束所通過的傳輸視窗可形成於所述腔室的上側上,且所述注射噴嘴可環繞所述傳輸視窗而設置。 A transmission window through which the laser beam generated by the laser generating unit passes may be formed on an upper side of the chamber, and the injection nozzle may be disposed around the transmission window.

所述腔室可包含:下部塊,其中所述基板支撐件設置在其上部上;以及蓋,覆蓋所述下部塊的上部以密封所述下部塊,其中裝載或卸載所述基板所通過的基板進入口形成於側壁中的除了所述蓋的上部側壁之外的至少一個側壁中。 The chamber may include: a lower block in which the substrate support is disposed on an upper portion thereof; and a cover covering an upper portion of the lower block to seal the lower block, wherein a substrate through which the substrate is loaded or unloaded The inlet port is formed in at least one of the side walls except the upper side wall of the cover.

用於吸入副產物的吸入器可設置到基板支撐件的兩側的下部,其中所述吸入器可包含:壓力調整單元,調整用於吸入所述副產物的壓力;以及吸入噴嘴,具有通過其吸入所述副產物的吸入孔。 An inhaler for inhaling by-products may be disposed to a lower portion of both sides of the substrate support, wherein the inhaler may include: a pressure adjustment unit that adjusts a pressure for drawing in the by-product; and a suction nozzle through which The suction hole of the by-product is sucked.

所述基板支撐件可為能夠在所述腔室內傳遞所述基板的基板傳遞單元。 The substrate support may be a substrate transfer unit capable of transferring the substrate within the chamber.

所述基板傳遞單元可包含:一對導軌,在與所述吸入噴嘴的兩端交叉的方向上彼此平行地設置,且在第一軸方向上彼此間隔開;第一軸滑塊,具有在所述導軌之間連接的第二軸方向的長度,且沿著所述導軌與所述吸入噴嘴一起在所述第一軸方向上 前後滑動;第二軸滑塊,設置在所述第一軸滑塊的上部上,且沿著所述第一滑塊在所述第二軸方向上前後滑動;旋轉軸導引件,插入到所述第二軸滑塊的中央內部中;以及基板支撐板,設置到所述旋轉軸導引件的上部。 The substrate transfer unit may include: a pair of guide rails disposed in parallel with each other in a direction crossing both ends of the suction nozzle, and spaced apart from each other in a first axial direction; the first shaft slider having a length of the second axial direction of the connection between the guide rails, and along the guide rail together with the suction nozzle in the first axial direction Sliding back and forth; a second shaft slider disposed on an upper portion of the first shaft slider and sliding back and forth along the first slider in the second axis direction; the rotary shaft guide is inserted into a central inner portion of the second shaft slider; and a substrate support plate disposed to an upper portion of the rotating shaft guide.

根據另一實施例,一種用於基板處理設備中的排氣設備,所述排氣設備包含:排氣埠,設置到基板的側表面;至少一個注射噴嘴;以及供應單元,將氣體供應給所述注射噴嘴。 According to another embodiment, an exhaust apparatus for use in a substrate processing apparatus, the exhaust apparatus comprising: an exhaust port disposed to a side surface of the substrate; at least one injection nozzle; and a supply unit that supplies the gas to the The injection nozzle is described.

所述排氣埠可形成於除了所述基板的上部和下部之外的整個表面處,或形成於所述基板的除了所述基板的所述上部和所述下部以及所述基板的進入方向之外的整個表面處。 The exhaust gas enthalpy may be formed at an entire surface other than an upper portion and a lower portion of the substrate, or formed in the upper and lower portions of the substrate and the entry direction of the substrate of the substrate Outside the entire surface.

所述注射噴嘴可包含:多個第一注射噴嘴,在一個方向上彼此平行地設置;以及多個第二注射噴嘴,在所述第一注射噴嘴的外部處在與所述一個方向交叉的另一方向上彼此平行地設置,其中所述注射噴嘴可形成為朝向所述基板的外部方向注射氣體。 The injection nozzle may include: a plurality of first injection nozzles disposed in parallel with each other in one direction; and a plurality of second injection nozzles at an outer portion of the first injection nozzle that intersect with the one direction The one direction is disposed in parallel with each other, wherein the injection nozzle may be formed to inject a gas toward an outer direction of the substrate.

吸入器可與基板的下部間隔地而設置,以吸入存在於所述基板的所述下部上的副產物。 An inhaler may be disposed spaced apart from a lower portion of the substrate to absorb by-products present on the lower portion of the substrate.

10‧‧‧腔室 10‧‧‧ chamber

12‧‧‧氣體入口 12‧‧‧ gas inlet

14‧‧‧氣體出口 14‧‧‧ gas export

14a‧‧‧氣體出口 14a‧‧‧ gas export

14b‧‧‧氣體出口 14b‧‧‧ gas export

30‧‧‧傳輸窗口 30‧‧‧Transmission window

50‧‧‧輻射構件 50‧‧‧radiation components

55‧‧‧雷射光束 55‧‧‧Laser beam

100‧‧‧腔室 100‧‧‧ chamber

110‧‧‧下部塊 110‧‧‧lower block

130‧‧‧蓋 130‧‧‧ Cover

135‧‧‧基板進入口 135‧‧‧substrate inlet

200‧‧‧排氣設備 200‧‧‧Exhaust equipment

220‧‧‧排氣埠 220‧‧‧Exhaust gas

240‧‧‧注射器 240‧‧‧Syringe

245‧‧‧注射噴嘴 245‧‧‧Injection nozzle

247‧‧‧注射孔 247‧‧‧ injection hole

260‧‧‧吸入器 260‧‧‧ inhaler

265‧‧‧吸入噴嘴 265‧‧‧Inhalation nozzle

267‧‧‧吸入孔 267‧‧‧Inhalation hole

300‧‧‧基板支撐件 300‧‧‧Substrate support

310‧‧‧線性馬達導軌 310‧‧‧Linear motor guide

330‧‧‧第一軸滑塊 330‧‧‧First Axis Slider

350‧‧‧第二軸滑塊 350‧‧‧Second axis slider

355‧‧‧旋轉軸導引件 355‧‧‧Rotary shaft guide

400‧‧‧傳輸窗口 400‧‧‧Transmission window

500‧‧‧雷射產生單元 500‧‧‧Laser generating unit

550‧‧‧反射鏡 550‧‧‧Mirror

551‧‧‧雷射光束 551‧‧‧Laser beam

1000‧‧‧基板處理設備 1000‧‧‧Substrate processing equipment

P‧‧‧副產物 P‧‧‧ by-product

S‧‧‧基板 S‧‧‧Substrate

可結合附圖從以下描述更詳細地理解示範性實施例。 The exemplary embodiments can be understood in more detail from the following description in conjunction with the drawings.

圖1是用於描述現有的雷射處理設備的視圖。 FIG. 1 is a view for describing a conventional laser processing apparatus.

圖2(a)、圖2(b)是用於描述雷射光束的形狀的視圖。 2(a) and 2(b) are views for describing the shape of a laser beam.

圖3是說明現有的排氣設備和排氣流的示意圖。 Figure 3 is a schematic diagram illustrating a prior art exhaust apparatus and exhaust flow.

圖4是說明根據示範性實施例的具有排氣設備的基板處理設備的視圖。 FIG. 4 is a view illustrating a substrate processing apparatus having an exhaust device, according to an exemplary embodiment.

圖5是說明根據示範性實施例的設有排氣埠和注射器的蓋的視圖。 FIG. 5 is a view illustrating a cover provided with an exhaust port and a syringe, according to an exemplary embodiment.

圖6是說明圖5的蓋的內部上表面的視圖。 Fig. 6 is a view for explaining an inner upper surface of the cap of Fig. 5.

圖7(a)、圖7(b)是說明從注射噴嘴注射的氣體的注射方向的視圖。 7(a) and 7(b) are views for explaining the injection direction of the gas injected from the injection nozzle.

圖8a、圖8b、圖8c是說明根據示範性實施例的基板支撐件和吸入器的視圖。 8a, 8b, and 8c are views illustrating a substrate support and an inhaler, according to an exemplary embodiment.

下文中,將參看附圖來詳細地描述示範性實施例。然而,本揭露可按照許多不同形式體現,且不應被解釋為限於本文中所陳述的實施例;而是,提供這些實施例以使得本揭露將徹底且完整,且將向所屬領域的技術人員完全地傳達本揭露的概念。全文中,相同的參考數字表示相同的元件。 Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. However, the present disclosure may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will be apparent to those skilled in the art The concept of this disclosure is fully conveyed. Throughout the text, the same reference numerals indicate the same elements.

下文中,將作為包含排氣設備的基板處理設備的雷射處理設備描述為實例,但根據示範性實施例的排氣設備的應用不限於此。也就是說,可將排氣設備應用於必須有效地移除在處理預定空間內的基板時產生的副產物的各種設備以及雷射處理設備。 Hereinafter, a laser processing apparatus as a substrate processing apparatus including an exhaust device will be described as an example, but an application of the exhaust apparatus according to an exemplary embodiment is not limited thereto. That is, the exhaust device can be applied to various devices and laser processing devices that must effectively remove by-products generated when the substrate in the predetermined space is processed.

圖4是說明根據示範性實施例的雷射處理設備的視圖。 圖5是說明根據示範性實施例的設有排氣埠和注射器的蓋的視圖。圖6是說明圖5的蓋的內部上表面的視圖。圖7(a)、圖7(b)是說明從注射噴嘴注射的氣體的注射方向的視圖。圖8a、圖8b、圖8c是說明根據示範性實施例的基板支撐件和吸入器的視圖。 FIG. 4 is a view illustrating a laser processing apparatus according to an exemplary embodiment. FIG. 5 is a view illustrating a cover provided with an exhaust port and a syringe, according to an exemplary embodiment. Fig. 6 is a view for explaining an inner upper surface of the cap of Fig. 5. 7(a) and 7(b) are views for explaining the injection direction of the gas injected from the injection nozzle. 8a, 8b, and 8c are views illustrating a substrate support and an inhaler, according to an exemplary embodiment.

雷射處理設備是使用雷射光束將PI薄膜與玻璃基板的邊界表面分離的設備。雷射處理設備包含:腔室100,形成處理基板S的內部空間;排氣設備200,將腔室100內的副產物排出到腔室100的外部;基板支撐件300,在腔室100的內部空間中支撐基板S;以及雷射產生單元500,設置在基板支撐件300上且將雷射光束551輻射到設置在基板支撐件300上的基板S上。 A laser processing apparatus is a device that separates a PI film from a boundary surface of a glass substrate using a laser beam. The laser processing apparatus includes: a chamber 100 forming an internal space for processing the substrate S; an exhaust device 200 discharging the by-products in the chamber 100 to the outside of the chamber 100; and a substrate support 300 inside the chamber 100 The support substrate S in the space; and the laser generating unit 500 are disposed on the substrate support 300 and radiate the laser beam 551 onto the substrate S disposed on the substrate support 300.

雷射處理設備還包含安裝在腔室100的面向基板S的一個側表面處的傳輸視窗400,及在腔室100的外部設置在傳輸視窗400上方以面向傳輸視窗400的反射鏡550。 The laser processing apparatus further includes a transmission window 400 installed at one side surface of the chamber 100 facing the substrate S, and a mirror 550 disposed outside the transmission window 400 to face the transmission window 400 outside the chamber 100.

腔室100包含:下部塊110,其上部是開放的;以及蓋130,設置在下部塊110的上部上以密封下部塊110。就這來說,腔室100不限於上文所描述的配置,且可例如以一體類型形成。當腔室100如上文所描述一體地形成時,門(未圖示)可設置到腔室100的至少任何一個地方。 The chamber 100 includes a lower block 110 whose upper portion is open, and a cover 130 disposed on an upper portion of the lower block 110 to seal the lower block 110. In this regard, the chamber 100 is not limited to the configuration described above, and may be formed, for example, in an integral type. When the chamber 100 is integrally formed as described above, a door (not shown) may be provided to at least any one of the chambers 100.

下部塊110設有設置在其上部上的基板支撐件300,基板支撐件300具有平坦上表面和預定厚度。此時,雖然在圖式中未圖示,但可形成通道,其中,能夠連接到基板支撐件300和排氣設備200的供應線連接到所述通道。 The lower block 110 is provided with a substrate support 300 disposed on an upper portion thereof, the substrate support 300 having a flat upper surface and a predetermined thickness. At this time, although not illustrated in the drawings, a passage may be formed in which a supply line connectable to the substrate support 300 and the exhaust apparatus 200 is connected to the passage.

蓋130用於覆蓋下部塊110的上部以密封下部塊110。此時,當將基板供應到腔室100中的裝載鎖腔室(未圖示)連接到側壁的除了蓋130的上表面之外的至少任何一個側壁時,形成基板進入口135,以使得基板通過基板進入口135而裝載或卸載。 A cover 130 is used to cover an upper portion of the lower block 110 to seal the lower block 110. At this time, when the substrate is supplied to the loading lock chamber (not shown) in the chamber 100 to be connected to at least any one of the side walls except the upper surface of the cover 130, the substrate inlet port 135 is formed so that the substrate Loading or unloading through the substrate inlet port 135.

下文中,將詳細描述包含於本發明的排氣設備200中的排氣埠220、注射器240和吸入器260。 Hereinafter, the exhaust port 220, the syringe 240, and the inhaler 260 included in the exhaust apparatus 200 of the present invention will be described in detail.

排氣設備200是用於處理基板S的系統中的設備,且將在基板S的處理過程中產生的副產物排出到腔室100的外部。排氣設備200包含:排氣埠220,形成於除了腔室100的上部和下部之外的側壁處;注射器240,設置到腔室100內的蓋的底表面;以及吸入器260,配備在傳遞基板S的支撐件300的兩側處,以在腔室100的底部上吸入副產物。 The exhaust device 200 is a device in a system for processing the substrate S, and discharges by-products generated during the processing of the substrate S to the outside of the chamber 100. The exhaust apparatus 200 includes an exhaust port 220 formed at a side wall other than an upper portion and a lower portion of the chamber 100, a syringe 240 disposed to a bottom surface of the cover in the chamber 100, and an inhaler 260 equipped for transmission At both sides of the support member 300 of the substrate S, by-products are sucked in at the bottom of the chamber 100.

至少一個排氣埠220形成於除了腔室100的上部和下部之外的所述側壁處,從而排出腔室100中的副產物,以使得腔室100內的副產物可被快速且容易地排出。排氣埠220可形成於除了腔室100的所述上部和所述下部之外的整個側壁處,或形成於除了腔室100的所述上部和所述下部以及形成基板進入口135的側壁之外的剩餘側壁處。當排氣埠220幾乎形成於所有側壁處且多個排氣埠220形成於每一側壁處時,有利的是,可將腔室100內的副產物快速地排出到外部。 At least one exhaust port 220 is formed at the side walls other than the upper and lower portions of the chamber 100, thereby discharging by-products in the chamber 100 so that by-products in the chamber 100 can be quickly and easily discharged . The exhaust enthalpy 220 may be formed at the entire side wall other than the upper portion and the lower portion of the chamber 100, or formed in addition to the upper portion and the lower portion of the chamber 100 and the side wall forming the substrate inlet port 135. Outside the remaining side walls. When the exhaust enthalpy 220 is formed almost at all the side walls and a plurality of exhaust enthalces 220 are formed at each of the side walls, it is advantageous that the by-products in the chamber 100 can be quickly discharged to the outside.

此時,能夠將副產物排出到外部的導管(未圖示)或軟管(未圖示)可連接到排氣埠220,以使得還可通過所述導管或軟 管將副產物排出到腔室100的外部。然而,在本發明中,當滿足應將多個排氣埠220設置到腔室100時,連接到排氣埠220的元件不受限制。 At this time, a duct (not shown) or a hose (not shown) capable of discharging the by-product to the outside may be connected to the exhaust port 220 so that the duct or soft can also be passed through The tube discharges by-products to the outside of the chamber 100. However, in the present invention, when a plurality of exhaust ports 220 are to be provided to the chamber 100, the elements connected to the exhaust port 220 are not limited.

注射器240設置在排氣埠220上方且用於在向下方向上(腔室100內的下側)推動副產物。更詳細來說,多個注射器240設置到腔室100的內部上表面(蓋130的內部上表面)。注射器240包含:氣體供應單元(未圖示),設置在腔室100的外部以供應氣體;以及注射噴嘴245,將從氣體供應單元供應的氣體注射到腔室100的內部中。此時,注射噴嘴245安裝在腔室100的內部的上側處,且形成有多個注射孔247,其中通過注射孔247來注射氣體。更詳細來說,多個注射噴嘴245安裝在蓋130的內部上表面上,且以一種方式連接,以使得可從設置到腔室100的外部的氣體供應單元供應氣體,以便將氣體注射到腔室100的內部。 A syringe 240 is disposed above the exhaust port 220 and serves to push the byproduct in a downward direction (the lower side within the chamber 100). In more detail, a plurality of syringes 240 are provided to the inner upper surface of the chamber 100 (the inner upper surface of the cover 130). The injector 240 includes a gas supply unit (not shown) disposed outside the chamber 100 to supply a gas, and an injection nozzle 245 that injects a gas supplied from the gas supply unit into the interior of the chamber 100. At this time, the injection nozzle 245 is installed at the upper side of the inside of the chamber 100, and is formed with a plurality of injection holes 247 through which the gas is injected. In more detail, a plurality of injection nozzles 245 are mounted on the inner upper surface of the cover 130, and are connected in such a manner that gas can be supplied from the gas supply unit provided to the outside of the chamber 100 to inject the gas into the cavity. The interior of the chamber 100.

同時,多個注射噴嘴245可在腔室100的每一側壁上彼此間隔開且在平行於側壁的方向上安裝。因此,如圖6所示,多個注射噴嘴245可分別在平行於腔室100的側壁的方向上以預定數目設置,且可分別安裝成在腔室的側壁上具有方向性。更詳細來說,注射噴嘴245包含:多個第一注射噴嘴,在一個方向上彼此平行地設置;以及多個第二噴嘴,在所述第一注射噴嘴的外部處在與所述一個方向交叉的另一方向上彼此平行地設置。因此,第一注射噴嘴和第二噴嘴環繞傳輸視窗而設置。 At the same time, a plurality of injection nozzles 245 can be spaced apart from each other on each side wall of the chamber 100 and mounted in a direction parallel to the side walls. Accordingly, as shown in FIG. 6, a plurality of injection nozzles 245 may be disposed in a predetermined number in a direction parallel to the side walls of the chamber 100, and may be respectively mounted to have directivity on the side walls of the chamber. In more detail, the injection nozzle 245 includes: a plurality of first injection nozzles disposed in parallel with each other in one direction; and a plurality of second nozzles crossing the one direction at the outside of the first injection nozzle The other direction is set in parallel with each other. Therefore, the first injection nozzle and the second nozzle are disposed around the transfer window.

此外,形成於注射噴嘴245中的每一者中的注射孔247 在面向腔室100的側壁中的每一者的方向上形成,以使得通過注射孔247注射的氣體具有方向性。也就是說,注射孔247形成為使得從朝向腔室的側壁偏置的注射孔247注射的氣體也在側壁方向上移動。因此,當將氣體注射到基板的上部中(即,在正交於腔室100的上部的方向上)時,抑制副產物掉落在基板的上部上,以使得可抑制對基板的污染。且,由於氣體具有朝向排氣埠220的方向性,可通過排氣埠220將腔室100內的副產物快速地排出到腔室100的外部。此外,注射孔247可將副產物推動到腔室100的底部,以使得副產物不會被吸收到設置在基板S的上部上的傳輸視窗400。 Further, an injection hole 247 formed in each of the injection nozzles 245 It is formed in a direction facing each of the side walls of the chamber 100 such that the gas injected through the injection hole 247 has directivity. That is, the injection hole 247 is formed such that the gas injected from the injection hole 247 biased toward the side wall of the chamber also moves in the side wall direction. Therefore, when the gas is injected into the upper portion of the substrate (that is, in a direction orthogonal to the upper portion of the chamber 100), the by-product is suppressed from falling on the upper portion of the substrate, so that contamination of the substrate can be suppressed. Moreover, since the gas has a directivity toward the exhaust port 220, by-products in the chamber 100 can be quickly discharged to the outside of the chamber 100 through the exhaust port 220. Further, the injection hole 247 can push the by-product to the bottom of the chamber 100 so that the by-product is not absorbed into the transfer window 400 provided on the upper portion of the substrate S.

如上配置的排氣設備200可包含吸入器260,其中,吸入器260能夠吸入並移除存在於腔室100的內部的底表面(即,下部塊110的上表面)上的副產物。 The exhaust apparatus 200 configured as above may include an inhaler 260 in which the inhaler 260 is capable of sucking in and removing by-products present on the bottom surface of the interior of the chamber 100 (ie, the upper surface of the lower block 110).

圖8a、圖8b、圖8c是說明根據示範性實施例的基板支撐件和注射器的視圖。圖8a是說明配備有基板支撐件和注射器的下部塊的透視圖。圖8b是圖8a的平面圖,且圖8c是吸入器的透視圖。 8a, 8b, and 8c are views illustrating a substrate support and a syringe, according to an exemplary embodiment. Figure 8a is a perspective view illustrating a lower block equipped with a substrate support and a syringe. Figure 8b is a plan view of Figure 8a and Figure 8c is a perspective view of the inhaler.

吸入器260是設置到基板支撐件300的兩個側表面的下部以吸入存在於下部塊110的上表面上的副產物的裝置。也就是說,吸入器260吸入通過注射器240推動和向下移動到腔室100的下部且保持在腔室100內的底部上的副產物。因此,吸入器260設有設置到腔室100的外部的壓力調整單元(未圖示)和形成有 吸入孔267的吸入噴嘴265,其中,副產物通過壓力調整單元的吸力通過吸入孔267來吸入。 The inhaler 260 is a device provided to a lower portion of both side surfaces of the substrate support 300 to suck in by-products present on the upper surface of the lower block 110. That is, the inhaler 260 draws in byproducts that are pushed through the syringe 240 and moved down to the lower portion of the chamber 100 and held on the bottom within the chamber 100. Therefore, the inhaler 260 is provided with a pressure adjusting unit (not shown) provided to the outside of the chamber 100 and formed with The suction nozzle 265 of the suction port 267 in which the by-product is sucked through the suction hole 267 by the suction force of the pressure adjusting unit.

壓力調整單元是一種裝置,其連接到設置在腔室100的內部中的吸入噴嘴265以調整壓力,以使得副產物通過吸入孔267而吸入到吸入噴嘴265中。壓力調整單元吸入腔室100內的氣體,以使得副產物可朝向吸入孔267移動。 The pressure adjusting unit is a device that is connected to a suction nozzle 265 provided in the interior of the chamber 100 to adjust the pressure so that by-products are sucked into the suction nozzle 265 through the suction hole 267. The pressure adjustment unit draws in the gas in the chamber 100 so that by-products can move toward the suction hole 267.

吸入噴嘴265設置到基板支撐件300的側表面中的至少一者,能夠在基板移動時根據基板支撐件300的移動而移動,且因此可吸入在基板支撐件300的移動範圍內的副產物。此時,吸入噴嘴265可如圖8c所示以杆狀形成,且固定到基板支撐件300的兩個側表面。 The suction nozzle 265 is provided to at least one of the side surfaces of the substrate support 300, is movable according to the movement of the substrate support 300 as the substrate moves, and thus can absorb by-products within the range of movement of the substrate support 300. At this time, the suction nozzle 265 may be formed in a rod shape as shown in FIG. 8c and fixed to both side surfaces of the substrate support 300.

此時,本發明中的基板支撐件300可為用於在腔室內支撐一個基板的單一支撐件,且因此在其兩個側表面處設有吸入孔。然而,當使用多個支撐件(例如,兩個支撐件)來提高基板的產量時,可為每一支撐件設置至少一個吸入噴嘴。 At this time, the substrate support 300 in the present invention may be a single support for supporting one substrate in the chamber, and thus is provided with suction holes at both side surfaces thereof. However, when a plurality of supports (for example, two supports) are used to increase the yield of the substrate, at least one suction nozzle may be provided for each support.

同時,支撐基板的基板支撐件300可為能夠在腔室100內水準地傳遞基板S的基板傳遞單元。因此,將參考圖8a、圖8b、圖8c所示的圖式來描述基板滑塊300。 Meanwhile, the substrate support 300 supporting the substrate may be a substrate transfer unit capable of horizontally transferring the substrate S within the chamber 100. Therefore, the substrate slider 300 will be described with reference to the drawings shown in FIGS. 8a, 8b, and 8c.

首先,基板S在垂直於雷射光束551的線的方向(箭頭方向)上水準移動,以使得所述雷射光束輻射在基板S的整個表面上。傳遞基板S的基板傳遞單元通過線性馬達(LM)導引件來配置。也就是說,基板傳遞單元具有沿著導軌線性地移動的結構。 First, the substrate S is horizontally moved in a direction (arrow direction) perpendicular to the line of the laser beam 551 so that the laser beam is radiated on the entire surface of the substrate S. The substrate transfer unit that transfers the substrate S is configured by a linear motor (LM) guide. That is, the substrate transfer unit has a structure that linearly moves along the guide rail.

如圖8a、圖8b、圖8c所示,第一軸滑塊330沿著LM導軌310移動,且充當基板支撐板的第二軸滑塊350與第一軸滑塊330一起移動。因此,在熱處理期間,基板通過第二軸方向上的移動和水準旋轉運動以及第一軸方向上的移動而安放在適當的位置處。此處,第一軸和第二軸是形成二維平面的任何軸,且可簡單地表達為X軸和Y軸。 As shown in FIGS. 8a, 8b, and 8c, the first shaft slider 330 moves along the LM guide 310, and the second shaft slider 350 serving as the substrate support plate moves together with the first shaft slider 330. Therefore, during the heat treatment, the substrate is placed at an appropriate position by the movement in the second axial direction and the leveling rotational motion and the movement in the first axial direction. Here, the first axis and the second axis are any axes forming a two-dimensional plane, and may be simply expressed as an X-axis and a Y-axis.

導軌310實施於一對軌道中,且所述一對軌道在下部塊的上表面(腔室100的底表面)上在Y軸方向(第一軸方向)上彼此間隔開地彼此平行地設置。也就是說,導軌310設置成與吸入噴嘴265的兩端交叉,且在第一軸方向上彼此間隔開地設置。 The guide rail 310 is implemented in a pair of rails, and the pair of rails are disposed in parallel with each other in the Y-axis direction (first axial direction) on the upper surface (the bottom surface of the chamber 100) of the lower block. That is, the guide rails 310 are disposed to intersect both ends of the suction nozzle 265 and are spaced apart from each other in the first axial direction.

第一軸滑塊330具有在所述一對導軌310之間連接的第二軸方向上的長度,且與吸入噴嘴265一起在所述第一軸方向上前後滑動。參看圖8b,第一軸滑塊330具有形成有U形線凹槽的長度,且允許第一軸滑塊330的主體的內部具有以線形製成的中空空間。 The first shaft slider 330 has a length in the second axial direction connected between the pair of guide rails 310, and slides back and forth in the first axial direction together with the suction nozzle 265. Referring to Fig. 8b, the first shaft slider 330 has a length in which a U-shaped groove is formed, and allows the inside of the body of the first shaft slider 330 to have a hollow space formed in a line shape.

第二軸滑塊350設置在第一軸滑塊330的上部上,且沿著第一軸滑塊330在第二軸方向上前後滑動。第二軸滑塊350安裝成內凹地覆蓋第一軸滑塊330的上部。此處,因為第二軸滑塊350安裝成內凹地覆蓋第一軸滑塊330,所以可降低基板支撐件300的總高度。 The second shaft slider 350 is disposed on an upper portion of the first shaft slider 330 and slides back and forth along the first shaft slider 330 in the second axial direction. The second shaft slider 350 is mounted to cover the upper portion of the first shaft slider 330 in a concave shape. Here, since the second shaft slider 350 is mounted to cover the first shaft slider 330 concavely, the total height of the substrate support 300 can be lowered.

且,因為旋轉軸導引件(未圖示)以插入到第二軸滑塊350的中央內部中的形狀來安裝,所以此形狀也有助於降低基板支 撐件300的總高度。選擇此類結構的原因是補償分別在第二軸滑塊350堆疊在第一軸滑塊330上且旋轉軸導引件堆疊在第二軸滑塊350上時由於基板支撐件的總高度的增大而佔用的過多空間的問題,且還補償基板傳遞的穩定性方面減小的問題。 Moreover, since the rotary shaft guide (not shown) is mounted in a shape inserted into the central interior of the second shaft slide 350, this shape also contributes to lowering the substrate support. The total height of the struts 300. The reason for selecting such a structure is to compensate for the increase in the total height of the substrate support when the second shaft slider 350 is stacked on the first shaft slider 330 and the rotary shaft guide is stacked on the second shaft slider 350, respectively. The problem of large and large occupied space, and also compensates for the problem of reduced stability in substrate transfer.

因為基板支撐件300具有如上文所描述的結構,所以第一軸滑塊330沿著彼此平行地安裝的兩個導軌310而滑動,且第二軸滑塊350與第一軸滑塊330一起滑動。旋轉軸導引件(未圖示)插入到第二軸滑塊350的中央內部中,且基板支撐板355安裝在旋轉軸導引件上。第一軸滑塊330和第二軸滑塊350通過線性馬達而移動,且旋轉軸導引件將旋轉操作賦予基板S。這樣,基板S通過基板支撐件300來傳遞。 Since the substrate support 300 has the structure as described above, the first shaft slider 330 slides along the two rails 310 mounted in parallel with each other, and the second shaft slider 350 slides together with the first shaft slider 330 . A rotary shaft guide (not shown) is inserted into the central interior of the second shaft slide 350, and the substrate support plate 355 is mounted on the rotary shaft guide. The first shaft slider 330 and the second shaft slider 350 are moved by a linear motor, and the rotary shaft guide imparts a rotational operation to the substrate S. Thus, the substrate S is transferred through the substrate support 300.

同時,根據修改的示範性實施例的基板處理設備1000可通過使用兩個傳遞單元來執行處理。此處,在通過一個傳遞單元傳遞的基板的處理完成之後,可立即處理下一基板的處理,進而提高基板的產量。 Meanwhile, the substrate processing apparatus 1000 according to the modified exemplary embodiment can perform processing by using two transfer units. Here, after the processing of the substrate transferred through one transfer unit is completed, the processing of the next substrate can be processed immediately, thereby increasing the yield of the substrate.

在設置了多個傳遞單元的基板處理設備1000中,因為吸入噴嘴形成於所述多個傳遞單元的兩個表面中的一者處,所以可由於兩個傳遞單元的移動來處理腔室的副產物。 In the substrate processing apparatus 1000 in which a plurality of transfer units are provided, since the suction nozzle is formed at one of the two surfaces of the plurality of transfer units, the pair of the chambers can be processed due to the movement of the two transfer units product.

因此設置到根據修改的示範性實施例的基板處理設備的元件可具有與設置到根據示範性實施例的基板處理設備的元件相同或相似的功能,且根據示範性實施例的基板處理設備可應用於根據修改的示範性實施例的基板處理設備。 Therefore, an element provided to the substrate processing apparatus according to the modified exemplary embodiment may have the same or similar function as the element provided to the substrate processing apparatus according to the exemplary embodiment, and the substrate processing apparatus according to the exemplary embodiment may be applied. A substrate processing apparatus according to a modified exemplary embodiment.

如上文所描述,排氣設備和具有排氣設備的基板處理設備可容易地將基板S內的副產物排出到腔室的外部。也就是說,所述副產物不浮動在基板處理設備的上部中,且通過設置到蓋內的上表面的注射器而被推向下部。 As described above, the exhaust apparatus and the substrate processing apparatus having the exhaust apparatus can easily discharge the by-products in the substrate S to the outside of the chamber. That is, the by-product does not float in the upper portion of the substrate processing apparatus, and is pushed down by the syringe provided to the upper surface inside the cover.

因為設置到注射器的注射噴嘴是在兩個側方向上以預定角度形成的,所以通過注射噴嘴注射的氣體可具有方向性且處理副產物。因此,副產物可通過形成於腔室的蓋的側表面處的排氣孔快速地排出。 Since the injection nozzles provided to the syringe are formed at a predetermined angle in both side directions, the gas injected through the injection nozzle can have directionality and process by-products. Therefore, by-products can be quickly discharged through the vent holes formed at the side surfaces of the lid of the chamber.

此外,因為在腔室內傳遞基板的傳遞單元的滑塊的兩個側表面的下部處設置吸入器,所以可從吸入噴嘴吸入副產物且可容易地移除存在於腔室的底表面上的副產物。此處,因為吸入噴嘴可根據傳遞單元的移動而移動,所以可根據傳遞單元的移動而移除腔室的底表面的幾乎所有區域中的副產物。 Further, since the inhaler is provided at the lower portions of the both side surfaces of the slider of the transfer unit that transmits the substrate inside the chamber, the by-product can be sucked from the suction nozzle and the pair existing on the bottom surface of the chamber can be easily removed product. Here, since the suction nozzle can be moved according to the movement of the transfer unit, by-products in almost all areas of the bottom surface of the chamber can be removed according to the movement of the transfer unit.

根據示範性實施例,可容易地排出在加壓氛圍下的處理的執行中產生的副產物。舉例來說,可容易地排出在通過雷射處理設備的雷射剝離處理分離形成於晶片基板上的薄膜時而產生的聚合物等副產物。因此,可防止副產物殘留在處理設備內並污染設備。 According to an exemplary embodiment, by-products generated in the execution of the treatment under a pressurized atmosphere can be easily discharged. For example, a by-product such as a polymer which is generated when a film formed on a wafer substrate is separated by a laser lift-off process by a laser processing apparatus can be easily discharged. Therefore, by-products can be prevented from remaining in the processing apparatus and contaminating the apparatus.

且,因為至少一個排氣埠形成於除了裝載或卸載基板的側壁之外的所有側壁中,所以可提高副產物到腔室的外部的排出速度,進而提高處理效率和生產率。 Moreover, since at least one exhaust gas enthalpy is formed in all of the side walls except for loading or unloading the side walls of the substrate, the discharge speed of the by-products to the outside of the chamber can be increased, thereby improving the processing efficiency and productivity.

此外,可通過從上部注射氣體而將浮動在基板上的副產 物快速地排出到腔室的外部。因此,可解決根據現有的排氣設備的形成位置而不容易移除副產物的問題。因此,在完成處理之後,產品的品質可得到提高。 In addition, by-products that float on the substrate by injecting gas from the top The object is quickly discharged to the outside of the chamber. Therefore, the problem of not easily removing by-products according to the formation position of the existing exhaust apparatus can be solved. Therefore, the quality of the product can be improved after the completion of the treatment.

此外,因為腔室的真空是不必要的,所以基板處理設備可減少由於真空狀態中的處理而消耗的氮氣的量。 Furthermore, since the vacuum of the chamber is unnecessary, the substrate processing apparatus can reduce the amount of nitrogen consumed due to the treatment in the vacuum state.

雖然已參考特定實施例描述了本發明,但本發明不限於此。因此,所屬領域的技術人員應易於理解,在不脫離由所附權利要求書定義的本發明的精神和範圍的情況下可對其進行各種修改和改變。 Although the invention has been described with reference to specific embodiments, the invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and changes can be made without departing from the spirit and scope of the invention as defined by the appended claims.

100‧‧‧腔室 100‧‧‧ chamber

110‧‧‧下部塊 110‧‧‧lower block

130‧‧‧蓋 130‧‧‧ Cover

200‧‧‧排氣設備 200‧‧‧Exhaust equipment

220‧‧‧排氣埠 220‧‧‧Exhaust gas

240‧‧‧注射器 240‧‧‧Syringe

260‧‧‧吸入器 260‧‧‧ inhaler

300‧‧‧基板支撐件 300‧‧‧Substrate support

400‧‧‧傳輸窗口 400‧‧‧Transmission window

500‧‧‧雷射產生單元 500‧‧‧Laser generating unit

550‧‧‧反射鏡 550‧‧‧Mirror

551‧‧‧雷射光束 551‧‧‧Laser beam

1000‧‧‧基板處理設備 1000‧‧‧Substrate processing equipment

S‧‧‧基板 S‧‧‧Substrate

Claims (13)

一種基板處理設備,其特徵在於包括:腔室,形成處理基板的內部空間;排氣裝置,將在所述基板的處理過程中產生的副產物排出到所述腔室的外部;基板支撐件,在所述腔室的所述內部空間中支撐所述基板;以及雷射產生單元,將雷射光束輻射到設置在所述基板支撐件上的所述基板上,其中所述排氣裝置包含排氣埠以及注射器,其中所述排氣埠形成於除了所述腔室的上部和下部之外的側壁處,且以單個或多個設置到所述側壁,且所述注射器設置在所述排氣埠的上側處且朝向下方注射氣體。 A substrate processing apparatus, comprising: a chamber forming an internal space of a processing substrate; an exhaust device discharging a by-product generated during processing of the substrate to an outside of the chamber; a substrate supporting member, Supporting the substrate in the inner space of the chamber; and a laser generating unit radiating a laser beam onto the substrate disposed on the substrate support, wherein the exhaust device comprises a row a gas cylinder and a syringe, wherein the exhaust gas enthalpy is formed at a side wall other than an upper portion and a lower portion of the chamber, and is provided to the side wall in a single or a plurality, and the injector is disposed at the exhaust gas The gas is injected at the upper side of the crucible and downward. 如申請專利範圍第1項所述的基板處理設備,其中所述排氣埠形成於所述腔室的除了所述腔室的所述上部和所述下部之外的整個側壁處,或形成於所述腔室的除了所述腔室的所述上部和所述下部以及形成進入口的側壁之外的所述整個側壁處。 The substrate processing apparatus of claim 1, wherein the exhaust gas enthalpy is formed at an entire sidewall of the chamber other than the upper portion and the lower portion of the chamber, or The entire side wall of the chamber other than the upper and lower portions of the chamber and the side wall forming the inlet opening. 如申請專利範圍第1項所述的基板處理設備,其中所述注射器具有設置在所述排氣埠的上側處且朝向下方注射氣體的注射噴嘴。 The substrate processing apparatus according to claim 1, wherein the injector has an injection nozzle disposed at an upper side of the exhaust port and injecting a gas toward the lower side. 如申請專利範圍第3項所述的基板處理設備,其中多個注射孔形成於所述注射噴嘴處,且 所述注射孔形成為朝向所述腔室的側壁方向注射所述氣體。 The substrate processing apparatus of claim 3, wherein a plurality of injection holes are formed at the injection nozzle, and The injection hole is formed to inject the gas toward a side wall of the chamber. 如申請專利範圍第4項所述的基板處理設備,其中從所述雷射產生單元產生的雷射光束所通過的傳輸視窗形成於所述腔室的上側上,且所述注射噴嘴環繞所述傳輸視窗而設置。 The substrate processing apparatus of claim 4, wherein a transmission window through which the laser beam generated from the laser generating unit passes is formed on an upper side of the chamber, and the injection nozzle surrounds the Set the transfer window. 如申請專利範圍第1項所述的基板處理設備,其中所述腔室包括:下部塊,所述基板支撐件設置在其上部上;以及蓋,覆蓋所述下部塊的上部以密封所述下部塊,其中裝載或卸載所述基板所通過的基板進入口形成於所述側壁中的除了所述蓋的上部側壁之外的至少一個側壁中。 The substrate processing apparatus of claim 1, wherein the chamber comprises: a lower block, the substrate support is disposed on an upper portion thereof; and a cover covering an upper portion of the lower block to seal the lower portion And a block in which a substrate inlet port through which the substrate is loaded or unloaded is formed in at least one of the side walls except the upper side wall of the cover. 如申請專利範圍第5項所述的基板處理設備,其中用於吸入副產物的吸入器設置到所述基板支撐件的兩側的下部,其中所述吸入器包括:壓力調整單元,調整用於吸入所述副產物的壓力;以及吸入噴嘴,具有吸入所述副產物所通過的吸入孔。 The substrate processing apparatus of claim 5, wherein an inhaler for inhaling by-products is provided to a lower portion of both sides of the substrate support, wherein the inhaler comprises: a pressure adjustment unit, adjusted for a pressure at which the by-product is sucked; and a suction nozzle having a suction hole through which the by-product is sucked. 如申請專利範圍第7項所述的基板處理設備,其中所述基板支撐件是能夠在所述腔室內傳遞所述基板的基板傳遞單元。 The substrate processing apparatus of claim 7, wherein the substrate support is a substrate transfer unit capable of transferring the substrate within the chamber. 如申請專利範圍第8項所述的基板處理設備,其中所述基板傳遞單元包括:一對導軌,在與所述吸入噴嘴的兩端交叉的方向上彼此平行地設置,且在第一軸方向上彼此間隔開;第一軸滑塊,具有在所述導軌之間連接的第二軸方向的長 度,且沿著所述導軌與所述吸入噴嘴一起在所述第一軸方向上前後滑動;第二軸滑塊,設置在所述第一軸滑塊的上部上,且沿著所述第一滑塊在所述第二軸方向上前後滑動;旋轉軸導引件,插入到所述第二軸滑塊的中央內部中;以及基板支撐板,設置到所述旋轉軸導引件的上部。 The substrate processing apparatus of claim 8, wherein the substrate transfer unit comprises: a pair of guide rails disposed in parallel with each other in a direction crossing the both ends of the suction nozzle, and in a first axial direction Separated from each other; a first axis slider having a length in a second axis direction connected between the rails Degree, and sliding back and forth along the guide rail together with the suction nozzle in the first axial direction; a second shaft slider disposed on an upper portion of the first shaft slider, along the a slider sliding back and forth in the second axial direction; a rotary shaft guide inserted into a central interior of the second shaft slider; and a substrate support plate disposed to an upper portion of the rotary shaft guide . 一種用於基板處理設備中的排氣設備,其特徵在於所述排氣設備包括:排氣埠,設置到基板除了上部以及下部的側表面;至少一個注射噴嘴,在所述基板上彼此間隔開地設置;供應單元,將氣體供應給所述注射噴嘴;以及注射器,從所述排氣埠的上側朝向下方注射氣體,其中所述注射噴嘴朝向所述排氣埠。 An exhaust apparatus for use in a substrate processing apparatus, characterized in that the exhaust apparatus includes: an exhaust port disposed to a side surface of the substrate except the upper portion and the lower portion; at least one injection nozzle spaced apart from each other on the substrate a supply unit that supplies gas to the injection nozzle, and a syringe that injects gas downward from an upper side of the exhaust port, wherein the injection nozzle faces the exhaust port. 如申請專利範圍第10項所述的排氣設備,其中所述排氣埠形成於除了所述基板的上部和下部之外的整個表面處,或形成於所述基板的除了所述基板的所述上部和所述下部以及所述基板的進入方向之外的整個表面處。 The exhaust apparatus according to claim 10, wherein the exhaust gas is formed at an entire surface other than an upper portion and a lower portion of the substrate, or is formed on the substrate other than the substrate The upper portion and the lower portion and the entire surface other than the entry direction of the substrate are described. 如申請專利範圍第10項所述的排氣設備,其中所述注射噴嘴包括:多個第一注射噴嘴,在一個方向上彼此平行地設置;以及多個第二注射噴嘴,在所述第一注射噴嘴的外部處在與所述一個方向交叉的另一方向上彼此平行地設置, 其中所述注射噴嘴形成為朝向所述基板的外部方向注射氣體。 The exhaust apparatus of claim 10, wherein the injection nozzle comprises: a plurality of first injection nozzles disposed in parallel with each other in one direction; and a plurality of second injection nozzles at the first The outside of the injection nozzle is disposed in parallel with each other in the other direction crossing the one direction, Wherein the injection nozzle is formed to inject a gas toward an outer direction of the substrate. 如申請專利範圍第10項所述的排氣設備,其中吸入器與所述基板的下部間隔地設置,以吸入存在於所述基板的所述下部上的副產物。 The exhaust apparatus according to claim 10, wherein the inhaler is disposed spaced apart from a lower portion of the substrate to suck in by-products present on the lower portion of the substrate.
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