TWI545081B - Purifying method and purifying apparatus for argon gas - Google Patents

Purifying method and purifying apparatus for argon gas Download PDF

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TWI545081B
TWI545081B TW101145489A TW101145489A TWI545081B TW I545081 B TWI545081 B TW I545081B TW 101145489 A TW101145489 A TW 101145489A TW 101145489 A TW101145489 A TW 101145489A TW I545081 B TWI545081 B TW I545081B
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argon gas
oxygen
adsorption
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carbon monoxide
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TW201332886A (en
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山本守彥
中谷光利
岸井充
志摩康一
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住友精化股份有限公司
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Description

氬氣之純化方法及純化裝置 Argon purification method and purification device

本發明係關於一種對至少含有氧、氫、一氧化碳、烴、油分及氮作為雜質之氬氣進行純化之方法與裝置。 The present invention relates to a method and apparatus for purifying argon containing at least oxygen, hydrogen, carbon monoxide, hydrocarbons, oil and nitrogen as impurities.

於例如矽單晶提拉爐、陶瓷燒結爐、製鋼用真空脫氣設備、太陽電池用矽電漿溶解裝置、多晶矽鑄造爐之類的設備中,氬氣被用作爐內環境氣體等。自上述設備回收以進行再利用之氬氣因混入氫、一氧化碳、空氣等而純度下降。因此,為提高所回收之氬氣之純度,進行有使所混入之雜質吸附於吸附劑。進而,提出:為效率良好地進行上述雜質之吸附,作為吸附處理之預處理,使雜質中之氧與可燃成分進行反應而改性為二氧化碳與水(參照專利文獻1、2)。 For example, in a bismuth single crystal pulling furnace, a ceramic sintering furnace, a vacuum degassing apparatus for steelmaking, a tantalum plasma dissolution apparatus for a solar cell, and a polycrystalline tantalum casting furnace, argon gas is used as an ambient gas in a furnace or the like. The argon gas recovered from the above-mentioned equipment for reuse is reduced in purity due to the incorporation of hydrogen, carbon monoxide, air, or the like. Therefore, in order to increase the purity of the recovered argon gas, the impurities to be mixed are adsorbed to the adsorbent. Furthermore, it is proposed that the adsorption of the impurities is performed efficiently, and the oxygen in the impurities is reacted with the combustible component to be converted into carbon dioxide and water as a pretreatment for the adsorption treatment (see Patent Documents 1 and 2).

於專利文獻1所揭示之方法中,首先,調節氬氣中之氧之量以使之變得稍小於使氫、一氧化碳等可燃成分完全燃燒所需之化學計量。繼而,將使氫與氧之反應優先於一氧化碳與氧之反應的鈀或金作為觸媒,使氬氣中之氧與一氧化碳、氫等進行反應,藉此於僅殘留有一氧化碳之狀態下生成二氧化碳與水。繼而,使氬氣中所含之二氧化碳與水於常溫下吸附於吸附劑,其後,使氬氣中所含之一氧化碳與氮於-10℃~-50℃之溫度下吸附於吸附劑。 In the method disclosed in Patent Document 1, first, the amount of oxygen in the argon gas is adjusted so as to become slightly smaller than the stoichiometric amount required for completely combusting a combustible component such as hydrogen or carbon monoxide. Then, palladium or gold which reacts hydrogen with oxygen in preference to carbon monoxide and oxygen is used as a catalyst to react oxygen in argon with carbon monoxide, hydrogen, etc., thereby generating carbon dioxide in a state in which only carbon monoxide remains. with water. Then, carbon dioxide and water contained in the argon gas are adsorbed to the adsorbent at normal temperature, and then one of the carbon oxides and nitrogen contained in the argon gas are adsorbed to the adsorbent at a temperature of -10 ° C to -50 ° C.

於專利文獻2所揭示之方法中,使氬氣中之氧之量成為足以使氫、一氧化碳等可燃成分完全燃燒之量,繼而,使 用鈀系之觸媒而使氬氣中之氧與一氧化碳、氫等進行反應,藉此於殘留有氧之狀態下生成二氧化碳與水。繼而,使氬氣中所含之二氧化碳與水於常溫下吸附於吸附劑,其後,使氬氣中所含之氧與氮於-170℃左右之溫度下吸附於吸附劑。 In the method disclosed in Patent Document 2, the amount of oxygen in the argon gas is made an amount sufficient to completely burn the combustible components such as hydrogen and carbon monoxide, and then The oxygen in the argon gas is reacted with carbon monoxide, hydrogen, or the like using a palladium-based catalyst to generate carbon dioxide and water in a state in which oxygen remains. Then, the carbon dioxide and water contained in the argon gas are adsorbed to the adsorbent at normal temperature, and then the oxygen and nitrogen contained in the argon gas are adsorbed to the adsorbent at a temperature of about -170 °C.

於專利文獻3所揭示之方法中,於自單晶製造爐等排出之氬氣中含有油分之情形時,使用裝有活性碳等之除油筒、除油過濾器除去該油分。繼而,使導入至觸媒筒內之氬氣中之氧與添加氫進行反應而轉化為水。繼而,將導入至吸附筒內之氬氣中之水與二氧化碳吸附除去,其後,藉由精餾操作進行純化。 In the method disclosed in Patent Document 3, when the argon gas discharged from the single crystal manufacturing furnace or the like contains oil, the oil is removed by using a degreasing cylinder containing activated carbon or the like and a degreasing filter. Then, the oxygen in the argon gas introduced into the catalyst cylinder is reacted with the added hydrogen to be converted into water. Then, the water introduced into the argon gas in the adsorption column is adsorbed and removed by carbon dioxide, and then purified by a rectification operation.

於專利文獻4所揭示之方法中,為對含有一氧化碳、氫、氧、及氮作為雜質之氬氣進行純化,而使氬氣中之一氧化碳及氫與氧進行反應,藉此於殘留有一氧化碳之狀態下生成二氧化碳與水。繼而,於10~50℃下使氬氣中之二氧化碳、水、氮及一氧化碳吸附於吸附劑,並於150~400℃下使該吸附劑再生。又,為吸附氬氣中之氮,而使用銅離子交換ZSM-5型沸石(銅離子交換率121%)作為吸附劑。 In the method disclosed in Patent Document 4, in order to purify argon gas containing carbon monoxide, hydrogen, oxygen, and nitrogen as impurities, one carbon oxide and hydrogen in argon gas are reacted with oxygen, thereby residual carbon monoxide. Carbon dioxide and water are produced in the state. Then, carbon dioxide, water, nitrogen and carbon monoxide in the argon gas are adsorbed to the adsorbent at 10 to 50 ° C, and the adsorbent is regenerated at 150 to 400 ° C. Further, in order to adsorb nitrogen in argon gas, a copper ion exchange ZSM-5 type zeolite (copper ion exchange rate: 121%) was used as an adsorbent.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利第3496079號公報 [Patent Document 1] Japanese Patent No. 3496079

[專利文獻2]日本專利第3737900號公報 [Patent Document 2] Japanese Patent No. 3737900

[專利文獻3]日本專利特開2000-88455號公報 [Patent Document 3] Japanese Patent Laid-Open Publication No. 2000-88455

[專利文獻4]日本專利特開2006-111506號公報 [Patent Document 4] Japanese Patent Laid-Open Publication No. 2006-111506

於專利文獻1所記載之方法中,於預處理之第1階段之反應中,於氬氣中殘留有一氧化碳之狀態下生成二氧化碳與水。然而,於氬氣中所含之烴較多之情形時,需提高反應溫度,因此一氧化碳亦與氧反應,從而難以使一氧化碳殘留。因此,由於無法於其後之常溫下之吸附處理中吸附除去氫,故而存在氫殘留於氬氣中而無法高純度地純化氬氣之問題。 In the method described in Patent Document 1, in the first-stage reaction of the pretreatment, carbon dioxide and water are generated in a state in which carbon monoxide remains in the argon gas. However, in the case where there are many hydrocarbons contained in the argon gas, it is necessary to raise the reaction temperature, so that carbon monoxide also reacts with oxygen, so that it is difficult to leave carbon monoxide. Therefore, since hydrogen cannot be adsorbed and removed in the subsequent adsorption treatment at normal temperature, there is a problem that hydrogen remains in the argon gas and the argon gas cannot be purified with high purity.

於專利文獻2所記載之方法中,於預處理之階段中,使氬氣中作為雜質而含有之氧之量成為足以使氫、一氧化碳等完全燃燒之量,藉此於殘留有氧之狀態下生成二氧化碳與水。然而,其後於吸附上述殘留之氧時需使吸附時之溫度降低至-170℃左右。即,由於吸附處理之預處理之階段中殘留氧,故而存在吸附處理時之冷卻能量增大,純化負荷變大之問題。 In the method described in Patent Document 2, the amount of oxygen contained as an impurity in the argon gas is an amount sufficient to completely burn hydrogen, carbon monoxide or the like in the pretreatment stage, whereby the residual oxygen is present. Produces carbon dioxide and water. However, it is necessary to lower the temperature at the time of adsorption to about -170 ° C when adsorbing the above residual oxygen. That is, since oxygen remains in the pretreatment stage of the adsorption treatment, there is a problem that the cooling energy at the time of adsorption treatment increases and the purification load becomes large.

於專利文獻3所記載之方法中,藉由使氬氣中所含之油分吸附於活性碳而將其除去。然而,於回收氬氣時,例如為保持氣密性等而採用如使用油之油旋轉真空泵之類的機器之情形時,油發生熱分解而生成烴成分。即便有除油用油霧分離器(mist separator),上述烴成分亦會穿過油霧分離器。如此,氬氣中所含之源自油分之烴變得非常多,甲烷為數十ppm以上,碳數2~6之烴(C2~C6)以碳數1之烴 (C1)換算計為數百ppm以上。甲烷未吸附於活性碳、碳數2~6之烴亦幾乎未吸附於活性碳而穿過觸媒筒,因此存在其後之精餾負荷增大之缺點。 In the method described in Patent Document 3, the oil contained in the argon gas is removed by adsorbing it to the activated carbon. However, when argon gas is recovered, for example, in the case of using a machine such as an oil-rotating vacuum pump to maintain airtightness or the like, the oil is thermally decomposed to generate a hydrocarbon component. Even if there is a mist separator for oil removal, the above hydrocarbon component passes through the oil mist separator. Thus, the hydrocarbon derived from the oil contained in the argon gas becomes very large, the methane is a tens of ppm or more, and the hydrocarbon having a carbon number of 2 to 6 (C2 to C6) is a hydrocarbon having a carbon number of 1. The (C1) conversion is calculated to be several hundred ppm or more. Methane, which is not adsorbed on activated carbon and has a carbon number of 2 to 6, is hardly adsorbed to the activated carbon and passes through the catalyst cylinder, so that there is a disadvantage that the subsequent distillation load is increased.

專利文獻4對於氬氣中所含之油分、或因油分之分解而作為副產物所生成之烴之除去未作任何揭示。 Patent Document 4 does not disclose any oil component contained in argon gas or hydrocarbons generated as a by-product due to decomposition of oil.

本發明之目的在於提供一種可解決如上所述之先前技術之問題的氬氣之純化方法及純化裝置。 It is an object of the present invention to provide a method and a purification apparatus for purifying argon which can solve the problems of the prior art as described above.

本發明方法之特徵在於:其係對至少含有氧、氫、一氧化碳、烴、油分及氮作為雜質之氬氣進行純化之方法,使上述氬氣中之烴之一部分與油分吸附於活性碳;繼而,判定上述氬氣中之氧量是否超過與上述氬氣中之氫、一氧化碳、及烴全部進行反應所需之設定量,於上述氬氣中之氧量為上述設定量以下之情形時,以超過上述設定量之方式添加氧;繼而,使用銠作為第1反應用觸媒而使上述氬氣中之一氧化碳、氫、及烴與氧進行反應,藉此於殘留有氧之狀態下生成二氧化碳與水;繼而,以上述氬氣中之一氧化碳量超過與上述殘留之全部氧進行反應所需之設定量的方式添加一氧化碳;繼而,使用釕、銠、或該等之混合物作為第2反應用觸媒而使上述氬氣中之氧與一氧化碳進行反應,藉此於殘留有一氧化碳之狀態下生成二氧化碳;繼而,藉由變壓吸附法使上述氬氣中之至少一氧化碳、二氧化碳、水、及氮吸附於吸附劑。 The method of the present invention is characterized in that it is a method for purifying argon gas containing at least oxygen, hydrogen, carbon monoxide, hydrocarbons, oil and nitrogen as impurities, so that one part of the hydrocarbon in the argon gas and the oil are adsorbed to the activated carbon; And determining whether the amount of oxygen in the argon gas exceeds a predetermined amount required to react with all of the hydrogen, carbon monoxide, and hydrocarbons in the argon gas, and when the amount of oxygen in the argon gas is less than the set amount, Oxygen is added in such a manner that the amount is more than the above-mentioned amount; and then, ruthenium is used as the first reaction catalyst, and one of the argon gas, carbon, hydrogen, and hydrocarbon is reacted with oxygen to generate carbon dioxide in a state in which oxygen remains. Water; then, carbon monoxide is added in such a manner that one of the argon gases exceeds the amount required to react with all of the residual oxygen; and then a mixture of ruthenium, osmium, or the like is used as the second reaction catalyst. And reacting oxygen in the argon gas with carbon monoxide to generate carbon dioxide in a state in which carbon monoxide remains; and then, by pressure swing adsorption method Said argon of at least carbon monoxide, carbon dioxide, water, and nitrogen adsorbed on the adsorbent.

根據本發明,藉由活性碳吸附氬氣中所含之油分,進而 藉由活性碳亦吸附源自油分之烴之一部分,尤其可藉由活性碳有效地吸附除碳數為1~6以外之烴。藉此,降低氬氣中之烴量,從而可降低後續步驟中藉由烴與氧之反應而生成之水與二氧化碳之量,減輕其後之吸附負荷。 According to the present invention, the oil contained in the argon gas is adsorbed by the activated carbon, thereby The activated carbon also adsorbs a part of the hydrocarbon derived from the oil, and in particular, the hydrocarbon having a carbon number of 1 to 6 can be efficiently adsorbed by the activated carbon. Thereby, the amount of hydrocarbons in the argon gas is reduced, so that the amount of water and carbon dioxide generated by the reaction of hydrocarbons and oxygen in the subsequent step can be reduced, and the subsequent adsorption load can be alleviated.

又,使用銠作為第1反應用觸媒而使氬氣中之氫、一氧化碳、及烴與氧進行反應,藉此於殘留有過剩之氧之狀態下生成二氧化碳與水。用作第1反應用觸媒之銠之耐熱性良好且反應性較高,因此於氬氣含有大量如甲烷之類的低級烴之情形時,可提高反應溫度使反應充分地進行,而有效地降低氬氣中之烴。 Further, hydrazine is used as the first reaction catalyst to cause hydrogen, carbon monoxide, and hydrocarbons in the argon gas to react with oxygen, whereby carbon dioxide and water are generated in a state in which excess oxygen remains. The ruthenium used as the first reaction catalyst has good heat resistance and high reactivity. Therefore, when argon gas contains a large amount of a lower hydrocarbon such as methane, the reaction temperature can be raised to sufficiently carry out the reaction, and the reaction is effectively carried out. Reduce hydrocarbons in argon.

藉由使用釕、銠、或該等之混合物作為第2反應用觸媒使上述殘留氧與新添加之一氧化碳進行反應,而於殘留有一氧化碳之狀態下生成二氧化碳。藉此,除去氬氣中之氧。藉由使用釕、銠、或該等之混合物作為第2反應用觸媒,可抑制水與一氧化碳之反應而抑制氫生成。藉此,於利用變壓吸附法之吸附處理之預處理之階段中,可防止吸附處理中不易除去之氫殘留於氬氣中,因此可高純度地純化氬氣。進而,於利用變壓吸附法之吸附處理之預處理之階段中,可自氬氣中除去氧,因此可減輕純化負荷,且有效地除去雜質。 The residual oxygen is reacted with the newly added carbon monoxide by using a mixture of ruthenium, osmium, or the like as the second reaction catalyst, and carbon dioxide is generated in a state in which carbon monoxide remains. Thereby, the oxygen in the argon gas is removed. By using ruthenium, osmium, or a mixture of these as the second reaction catalyst, the reaction between water and carbon monoxide can be suppressed to suppress hydrogen generation. Thereby, in the stage of pretreatment by the adsorption treatment by the pressure swing adsorption method, it is possible to prevent hydrogen which is hard to be removed in the adsorption treatment from remaining in the argon gas, so that the argon gas can be purified with high purity. Further, in the stage of pretreatment by the adsorption treatment by the pressure swing adsorption method, oxygen can be removed from the argon gas, so that the purification load can be reduced and the impurities can be effectively removed.

本發明裝置之特徵在於:其係對至少含有氧、氫、一氧化碳、烴、油分及氮作為雜質之氬氣進行純化之裝置,且包含:活性碳吸附塔,於其中導入上述氬氣;第1反應器,於其中導入自上述活性碳吸附塔流出之氬氣;氧供給 器,其可向導入至上述第1反應器內之氬氣中添加氧;第2反應器,於其中導入自上述第1反應器流出之氬氣;一氧化碳供給器,其可向導入至上述第2反應器內之氬氣中添加一氧化碳;及吸附裝置,於其中導入自上述第2反應器流出之氬氣;於上述活性碳吸附塔中收容有吸附上述氬氣中之烴之一部分與油分之活性碳;於上述第1反應器中收容有銠作為使上述氬氣中之一氧化碳、氫、及烴與氧進行反應之第1反應用觸媒;於上述第2反應器中收容有釕、銠、或該等之混合物作為使上述氬氣中之氧與一氧化碳進行反應之第2反應用觸媒;上述吸附裝置包含PSA(Pressure Swing Absorption,變壓吸附)單元,該PSA單元係藉由變壓吸附法吸附上述氬氣中之至少一氧化碳、二氧化碳、水、及氮。 The apparatus of the present invention is characterized in that it is a device for purifying argon gas containing at least oxygen, hydrogen, carbon monoxide, hydrocarbons, oil and nitrogen as impurities, and comprises: an activated carbon adsorption tower into which the argon gas is introduced; a reactor in which argon gas discharged from the above activated carbon adsorption tower is introduced; oxygen supply Adding oxygen to the argon gas introduced into the first reactor; the second reactor, wherein the argon gas flowing out from the first reactor is introduced; and the carbon monoxide feeder, which can be introduced to the first 2 adding carbon monoxide to the argon gas in the reactor; and an adsorption device for introducing argon gas flowing out from the second reactor; wherein the activated carbon adsorption column contains a part of the hydrocarbon adsorbing the argon gas and the oil component In the first reactor, ruthenium is contained as a first reaction catalyst for reacting one of argon gas, carbon, hydrogen, and hydrocarbon with oxygen; and the second reactor contains ruthenium and osmium. Or a mixture of the above as a second reaction catalyst for reacting oxygen in the argon gas with carbon monoxide; the adsorption device includes a PSA (Pressure Swing Absorption) unit, and the PSA unit is transformed by pressure The adsorption method adsorbs at least carbon monoxide, carbon dioxide, water, and nitrogen in the above argon gas.

根據本發明裝置,可實施本發明方法。 The method of the invention can be carried out in accordance with the apparatus of the invention.

於本發明方法中,較佳為於使用上述第1反應用觸媒之反應與使用上述第2反應用觸媒之反應之間,藉由使用脫水裝置之脫水處理降低上述氬氣中之含水率。 In the method of the present invention, it is preferred to reduce the water content in the argon gas by a dehydration treatment using a dehydration device between the reaction using the first reaction catalyst and the reaction using the second reaction catalyst. .

藉此,於可藉由使用釕、銠、或該等之混合物作為第2反應用觸媒而抑制氫生成之基礎上,可更確實地防止氫生成。即,藉由於使用第2反應用觸媒之反應前使用脫水裝置降低氬氣中之水分量,使水分量之絕對值變低,而抑制因水分量之絕對值導致發生變化之有效反應溫度之變化,因此可更確實地進行反應溫度之控制。進而,藉由降低氬氣中之水分量,而抑制成為觸媒負荷之一氧化碳與水之反 應,減輕觸媒之負荷,因此可使觸媒穩定地發揮作用。藉此,即便因負荷變動而氬氣中之氧、一氧化碳及水之濃度發生變動,亦可以抑制一氧化碳與水之反應之方式確實地進行應對,而可確實地防止氫之產生。作為脫水裝置,較佳為使用例如包含2座填充有活性氧化鋁作為脫水劑之塔者,藉由一塔之活性氧化鋁進行脫水處理之期間使另一塔之活性氧化鋁再生。 Thereby, hydrogen generation can be more reliably prevented by using a mixture of ruthenium, osmium, or the like as the second reaction catalyst to suppress hydrogen generation. In other words, by using a dehydration device before the reaction using the second reaction catalyst, the amount of water in the argon gas is lowered, and the absolute value of the moisture content is lowered, thereby suppressing the effective reaction temperature which changes due to the absolute value of the moisture content. The change is made so that the control of the reaction temperature can be performed more surely. Further, by reducing the amount of water in the argon gas, it is suppressed that one of the catalytic loads is the opposite of carbon oxide and water. Should reduce the load of the catalyst, so that the catalyst can work stably. Thereby, even if the concentration of oxygen, carbon monoxide, and water in the argon gas changes due to the load fluctuation, it is possible to reliably cope with the reaction of the carbon monoxide and the water, and it is possible to reliably prevent the generation of hydrogen. As the dehydration means, for example, a column containing two activated aluminas as a dehydrating agent is preferably used, and the activated alumina of the other column is regenerated by dehydration treatment of one column of activated alumina.

於該情形時,於本發明裝置中,較佳為於上述第1反應器與上述第2反應器之間,設置有降低自上述第1反應器流出之氬氣中之含水率的脫水裝置。作為脫水裝置,可使用冷凍機或填充有脫濕劑之管柱等。 In this case, in the apparatus of the present invention, it is preferable that a dewatering apparatus for reducing the water content in the argon gas flowing out of the first reactor is provided between the first reactor and the second reactor. As the dehydration device, a refrigerator or a column filled with a dehumidifying agent or the like can be used.

於本發明中,較佳為作為用於上述變壓吸附法之上述吸附劑,使用活性氧化鋁與X型沸石。 In the present invention, it is preferred to use activated alumina and X-type zeolite as the above-mentioned adsorbent for the pressure swing adsorption method.

藉由使用活性氧化鋁作為吸附劑,可吸附/解吸水分及二氧化碳,因此可提高利用X型沸石之一氧化碳、氮及烴之吸附效果。即,二氧化碳相對難以自X型沸石解吸,而使X型沸石之吸附效果降低。若為提高吸附效果而增加PSA單元內填充之X型沸石,則亦必需使升壓用之壓縮機等之能力增大,因此存在PSA單元大型化且效率下降之問題。相對於此,藉由利用活性氧化鋁吸附二氧化碳,可提高X型沸石之吸附效果。藉此,即便於利用吸附裝置之吸附處理之前階段中烴殘留於氬氣中,亦可無需使PSA單元大型化而藉由變壓吸附法有效地使烴吸附於吸附劑。 By using activated alumina as an adsorbent, water absorption and carbon dioxide can be adsorbed/decomposed, so that the adsorption effect of carbon, nitrogen and hydrocarbons by one of the X-type zeolites can be improved. That is, carbon dioxide is relatively difficult to desorb from the X-type zeolite, and the adsorption effect of the X-type zeolite is lowered. When the X-type zeolite filled in the PSA unit is added to increase the adsorption effect, the capacity of the compressor for boosting or the like must be increased. Therefore, there is a problem that the PSA unit is enlarged and the efficiency is lowered. On the other hand, by adsorbing carbon dioxide by activated alumina, the adsorption effect of the X-type zeolite can be improved. Thereby, even if the hydrocarbon remains in the argon gas in the stage before the adsorption treatment by the adsorption device, it is possible to efficiently adsorb the hydrocarbon to the adsorbent by the pressure swing adsorption method without increasing the size of the PSA unit.

並且,可提高利用變壓吸附法之一氧化碳與氮之吸附效 果,因此於利用變壓吸附法之吸附後,無需藉由-10℃~-50℃下之變溫吸附法使氬氣中之氮吸附於吸附劑,而可以低能量且高純度地純化氬氣。 Moreover, the adsorption efficiency of carbon monoxide and nitrogen, which is one of the pressure swing adsorption methods, can be improved. Therefore, after the adsorption by the pressure swing adsorption method, it is not necessary to adsorb the nitrogen in the argon gas to the adsorbent by the temperature swing adsorption method at -10 ° C to -50 ° C, and the argon gas can be purified with low energy and high purity. .

於該情形時,若活性氧化鋁相對於X型沸石之重量比變小,則氮、烴之吸附失效時間變短,若變大,則吸附失效時間變長。較佳為將上述活性氧化鋁與上述X型沸石設為層狀而配置,且將上述活性氧化鋁與上述X型沸石之重量比設為5/95~30/70。藉此,可藉由上述變壓吸附法有效地使上述氬氣中之烴吸附於上述吸附劑。作為活性氧化鋁,較佳為用作脫濕用者且比表面積為270 m2/g以上者。作為X型沸石,例如可使用Li-X型、Ca-X型,尤佳為Li-X型。 In this case, when the weight ratio of the activated alumina to the X-type zeolite is small, the adsorption failure time of nitrogen and hydrocarbons becomes short, and if it becomes large, the adsorption failure time becomes long. Preferably, the activated alumina and the X-type zeolite are arranged in a layer form, and the weight ratio of the activated alumina to the X-type zeolite is set to 5/95 to 30/70. Thereby, the hydrocarbon in the argon gas can be efficiently adsorbed to the adsorbent by the pressure swing adsorption method. As the activated alumina, it is preferably used as a dehumidifier and has a specific surface area of 270 m 2 /g or more. As the X-type zeolite, for example, a Li-X type or a Ca-X type can be used, and a Li-X type is particularly preferable.

於本發明方法中,較佳為於利用上述變壓吸附法之吸附後,藉由-10℃~-50℃下之變溫吸附法使上述氬氣中之氮吸附於吸附劑。 In the method of the present invention, it is preferred that the nitrogen in the argon gas is adsorbed to the adsorbent by a temperature swing adsorption method at -10 ° C to -50 ° C after adsorption by the pressure swing adsorption method.

雖氬氣中之氮濃度可僅藉由利用變壓吸附法之吸附而降低,但藉由併用利用變溫吸附法之吸附,可減輕用以實施變壓吸附法之PSA單元之負荷,可對應於純化前之氬氣中之雜質濃度之變動而確實地除去雜質。藉此,可進一步提高純化後之氬氣之純度。又,由於可於利用變溫吸附法之吸附處理之預處理階段中自氬氣中除去氧,進而可利用變壓吸附法除去一氧化碳,故而可降低利用變溫吸附法之吸附處理時之冷卻能量。進而,由於可於利用變溫吸附法之吸附處理之預處理階段中自氬氣中除去烴,故而於用於變溫吸附法之吸附劑之再生時,無需使氮以外者自吸附劑脫 離,而可降低再生能量。 Although the nitrogen concentration in the argon gas can be reduced only by the adsorption by the pressure swing adsorption method, the adsorption by the temperature swing adsorption method can reduce the load of the PSA unit for performing the pressure swing adsorption method, which can correspond to The impurity concentration in the argon gas before the purification is changed to surely remove the impurities. Thereby, the purity of the purified argon gas can be further improved. Further, since the oxygen can be removed from the argon gas in the pretreatment stage by the adsorption treatment by the temperature swing adsorption method, the carbon monoxide can be removed by the pressure swing adsorption method, so that the cooling energy during the adsorption treatment by the temperature swing adsorption method can be reduced. Further, since the hydrocarbon can be removed from the argon gas in the pretreatment stage of the adsorption treatment by the temperature swing adsorption method, it is not necessary to remove the nitrogen from the adsorbent when the adsorbent for the temperature swing adsorption method is regenerated. It can reduce the regenerative energy.

於該情形時,本發明裝置中之上述吸附裝置較佳為包含TSA(Thermal Swing Absorption,變溫吸附)單元,該TSA單元係藉由-10℃~-50℃下之變溫吸附法吸附自上述PSA單元流出之上述氬氣中之氮。 In this case, the adsorption device in the device of the present invention preferably comprises a TSA (Thermal Swing Absorption) unit, and the TSA unit is adsorbed from the PSA by a temperature swing adsorption method at -10 ° C to -50 ° C. The nitrogen in the above argon gas flowing out of the unit.

根據本發明,可提供如下實用之方法與裝置:藉由於吸附處理之預處理階段中降低氬氣之雜質含有率,而可降低吸附處理之負荷,減少純化所需之能量,且高純度地純化所回收之氬氣,進而即便於氬氣含有烴及油分之情形時亦可有效應對。 According to the present invention, there can be provided a practical method and apparatus for reducing the load of adsorption treatment, reducing the energy required for purification, and purifying with high purity by reducing the impurity content of argon in the pretreatment stage of the adsorption treatment. The recovered argon gas can be effectively dealt with even when the argon gas contains hydrocarbons and oil.

圖1所示之氬氣之純化裝置α係將自例如單晶矽、多晶矽鑄造爐之類的氬氣供給源1供給之使用完畢之氬氣回收並以可進行再利用之方式純化。純化裝置α包含過濾器2、活性碳吸附塔3、加熱器4、具有第1反應器5a與第2反應器5b之反應裝置5、具有切換閥6a~6c之脫水裝置6、吸附裝置7、氧供給器8、一氧化碳供給器9、冷卻器C、及製品儲罐T。 The argon purification apparatus α shown in Fig. 1 recovers the used argon gas supplied from an argon supply source 1 such as a single crystal crucible or a polycrystalline crucible casting furnace, and purifies it so that it can be reused. The purification device α includes a filter 2, an activated carbon adsorption column 3, a heater 4, a reaction device 5 having a first reactor 5a and a second reactor 5b, a dehydration device 6 having switching valves 6a to 6c, and an adsorption device 7, Oxygen feeder 8, carbon monoxide feeder 9, cooler C, and product storage tank T.

純化前之氬氣中所含有之微量之雜質至少為氧、氫、一氧化碳、烴、油分及氮,亦可含有二氧化碳、水等其他雜質。純化前之氬氣中之雜質之濃度並無特別限定,例如為5莫耳ppm~80000莫耳ppm左右。 The trace amount of impurities contained in the argon gas before purification is at least oxygen, hydrogen, carbon monoxide, hydrocarbons, oil and nitrogen, and may also contain other impurities such as carbon dioxide and water. The concentration of the impurities in the argon gas before the purification is not particularly limited, and is, for example, about 5 mol ppm to 80000 mol ppm.

自供給源1所供給之氬氣係藉由例如油旋轉真空泵(省略 圖示)回收,並藉由過濾器2(例如CKD公司製造之AF1000P)除塵後,首先導入至活性碳吸附塔3內。於活性碳吸附塔3內收容有吸附氬氣中之烴之一部分與油分的活性碳。 The argon gas supplied from the supply source 1 is rotated by, for example, an oil rotary pump (omitted It is collected and collected by the filter 2 (for example, AF1000P manufactured by CKD Co., Ltd.), and then introduced into the activated carbon adsorption column 3 first. The activated carbon adsorption tower 3 contains activated carbon which adsorbs a part of the hydrocarbon in the argon gas and the oil.

判定烴之一部分與油分經活性碳吸附後之氬氣中之氧量是否超過與該氬氣中之氫、一氧化碳、及烴全部進行反應所需之氧之設定量。於本實施形態中,該氧之設定量設為與上述氬氣中之氫、一氧化碳、及烴全部進行反應所需之氧之化學計量。 It is determined whether the amount of oxygen in the argon gas after one of the hydrocarbons and the oil is adsorbed by the activated carbon exceeds a set amount of oxygen required to react with all of the hydrogen, carbon monoxide, and hydrocarbons in the argon gas. In the present embodiment, the oxygen is set to a stoichiometric amount of oxygen required for the reaction with all of the hydrogen, carbon monoxide, and hydrocarbon in the argon gas.

根據氬氣中所含有之烴之種類,使烴完全燃燒所需之氧量有所不同。因此,上述判定較佳為於預先藉由實驗求出氬氣中所含有之雜質之組成與濃度之後進行。例如於氬氣中所含有之烴為甲烷之情形時,氬氣中之氫、一氧化碳、及甲烷與氧進行反應而生成水與二氧化碳時之反應式如下所述。 The amount of oxygen required to completely burn a hydrocarbon varies depending on the type of hydrocarbon contained in the argon gas. Therefore, the above determination is preferably carried out after experimentally determining the composition and concentration of the impurities contained in the argon gas. For example, when the hydrocarbon contained in argon is methane, the reaction formula of hydrogen, carbon monoxide, and methane in argon reacting with oxygen to form water and carbon dioxide is as follows.

H2+1/2O2 → H2O CO+1/2O2 → CO2 CH4+2O2 → CO2+2H2O H 2 +1/2O 2 → H 2 O CO+1/2O 2 → CO 2 CH 4 +2O 2 → CO 2 +2H 2 O

於該情形時,根據氬氣中之氧莫耳濃度是否超過與氫莫耳濃度之1/2、一氧化碳莫耳濃度之1/2及甲烷莫耳濃度之2倍之和相等的值,判定氬氣中之氧量是否超過上述化學計量即可。當然,氬氣中所含有之烴並不限定於甲烷,又,亦可含有2種以上之烴。 In this case, the argon is determined according to whether the oxygen molar concentration in the argon exceeds a value equal to 1/2 of the hydrogen molar concentration, 1/2 of the carbon monoxide molar concentration, and 2 times the methane molar concentration. Whether the amount of oxygen in the gas exceeds the above stoichiometry. Of course, the hydrocarbon contained in the argon gas is not limited to methane, and may contain two or more kinds of hydrocarbons.

上述氧之設定量並非必需為上述化學計量,只要為上述 化學計量以上即可。例如較佳為設為上述化學計量之1.05倍~2.0倍之值,藉由設為1.05倍以上,可使氬氣中之氧確實地與氫、一氧化碳、及烴進行反應,藉由設為2.0倍以下,可防止氧濃度變高至所需以上。 The above oxygen setting amount is not necessarily the above stoichiometry, as long as it is the above It can be more than the stoichiometry. For example, it is preferably set to a value of 1.05 times to 2.0 times the stoichiometric amount, and by setting it to 1.05 times or more, oxygen in argon gas can be reliably reacted with hydrogen, carbon monoxide, and hydrocarbons, and is set to 2.0. Below this, it is possible to prevent the oxygen concentration from becoming higher than necessary.

於氬氣中之氧量為上述設定量以下之情形時,藉由氧供給器8以超過上述設定量之方式向氬氣中添加氧。於氬氣中之氧量超過上述設定量之情形時,無需進行氧添加。即,純化裝置α係於氬氣中之氧量超過上述設定量之情形時,直接對該氬氣進行純化,又,於上述氧量為上述設定量以下之情形時,對以超過上述設定量之方式添加氧後之氬氣進行純化。藉由設置可向導入至第1反應器5a內之氬氣中添加氧的氧供給器8,於氬氣中之氧量為上述設定量以下之情形時,可以超過上述設定量之方式向氬氣中添加氧。 When the amount of oxygen in the argon gas is equal to or less than the above-described set amount, oxygen is added to the argon gas by the oxygen supplier 8 so as to exceed the above-described set amount. When the amount of oxygen in the argon gas exceeds the above-described set amount, it is not necessary to perform oxygen addition. In other words, when the amount of oxygen in the argon gas exceeds the above-described set amount, the purification device α directly purifies the argon gas, and when the amount of oxygen is equal to or less than the set amount, the amount exceeds the set amount. The argon gas after the addition of oxygen was purified. When the oxygen supply device 8 that can supply oxygen to the argon gas introduced into the first reactor 5a is provided, when the amount of oxygen in the argon gas is equal to or less than the above-described set amount, the argon can be supplied in excess of the above-mentioned set amount. Add oxygen to the gas.

氧供給器8可由例如具有流量控制閥之高壓氧容器之類的可以與氬氣向第1反應器5a之導入流量對應之流量添加氧者所構成。再者,較佳為設置用以於該氧供給前對導入至第1反應器5a內之氬氣進行採樣之採樣線,於該採樣線上設置氧分析儀(例如GE Sensing & Inspection Technologies公司製造之DE-150ε)、氫分析氣相層析儀(例如GL science公司製造之GC-PDD)、一氧化碳分析儀(例如富士電機系統公司製造之ZRE)及總烴分析儀(例如堀場公司製造之FIA-510),又,於導入至第2反應器5b內之前之氬氣之採樣線上設置氧分析儀及一氧化碳分析儀。藉此, 藉由連續地監視氬氣中之雜質組成,可更確實地添加微過剩之氧。 The oxygen supplier 8 can be composed of, for example, a high-pressure oxygen container having a flow rate control valve, and oxygen can be added to the flow rate corresponding to the introduction flow rate of the argon gas to the first reactor 5a. Furthermore, it is preferable to provide a sampling line for sampling the argon gas introduced into the first reactor 5a before the oxygen supply, and an oxygen analyzer (for example, manufactured by GE Sensing & Inspection Technologies) is disposed on the sampling line. DE-150ε), hydrogen analysis gas chromatograph (such as GC-PDD manufactured by GL science), carbon monoxide analyzer (such as ZRE manufactured by Fuji Electric Systems Co., Ltd.), and total hydrocarbon analyzer (such as FIA manufactured by Horiba Co., Ltd.) 510) Further, an oxygen analyzer and a carbon monoxide analyzer are disposed on the sampling line of the argon gas before being introduced into the second reactor 5b. With this, By continuously monitoring the impurity composition in the argon gas, it is possible to more reliably add the excess oxygen.

自活性碳吸附塔3流出之氬氣經由加熱器4而導入至第1反應器5a內。為完成第1反應器5a中之反應,利用加熱器4之氬氣之加熱溫度較佳為設為200℃以上,就防止觸媒之壽命縮短之觀點而言,較佳為設為400℃以下。 The argon gas flowing out of the activated carbon adsorption tower 3 is introduced into the first reactor 5a via the heater 4. In order to complete the reaction in the first reactor 5a, the heating temperature of the argon gas by the heater 4 is preferably 200 ° C or more, and from the viewpoint of preventing the life of the catalyst from being shortened, it is preferably 400 ° C or less. .

於第1反應器5a內收容有銠(Rh)作為第1反應用觸媒,以便藉由於第1反應器5a內使氬氣中之一氧化碳、氫、及烴與氧進行反應而於殘留有氧之狀態下生成二氧化碳與水。於氬氣包含大量如甲烷之類的低級烴之情形時,較佳為將反應溫度設為300℃以上以使反應充分地進行。因此,較佳為使用將耐熱性良好且反應性較高之銠擔載於氧化鋁而成之觸媒。作為使一氧化碳、氫、及烴與氧進行反應之觸媒,亦可使用鈀等,但銠比鈀等更具有耐熱性,作為於本條件下之耐熱溫度之一例,鈀為500℃~600℃,鉑(Pt)為500℃~600℃,釕(Ru)為350℃~400℃左右,相對於此,銠為700℃~800℃左右,且長期使用時之耐久性亦優異。藉由使用上述銠觸媒,可於第1反應器5a中有效地降低氬氣中之烴。 Rhenium (Rh) is contained in the first reactor 5a as a first reaction catalyst to cause residual oxygen in the first reactor 5a by reacting one of argon gas, hydrogen, and hydrocarbon with oxygen in the first reactor 5a. Carbon dioxide and water are generated in the state. In the case where the argon gas contains a large amount of a lower hydrocarbon such as methane, it is preferred to set the reaction temperature to 300 ° C or more to allow the reaction to proceed sufficiently. Therefore, it is preferred to use a catalyst in which ruthenium having good heat resistance and high reactivity is supported on alumina. Palladium or the like may be used as a catalyst for reacting carbon monoxide, hydrogen, and a hydrocarbon with oxygen, but ruthenium has higher heat resistance than palladium or the like. As an example of the heat resistance temperature under the present conditions, palladium is 500 ° C to 600 ° C. Platinum (Pt) is 500 ° C ~ 600 ° C, ruthenium (Ru) is about 350 ° C ~ 400 ° C, in contrast, 铑 is about 700 ° C ~ 800 ° C, and durability is also excellent in long-term use. By using the above-mentioned catalyst, the hydrocarbon in the argon gas can be effectively reduced in the first reactor 5a.

脫水裝置6係設置於第1反應器5a與第2反應器5b之間,可降低自第1反應器5a流出之氬氣中之含水率。於本實施形態中,自第1反應器5a流出之氬氣係經由脫水裝置6或直接導入至第2反應器5b內。即,將第1反應器5a與脫水裝置6連接之配管藉由切換閥6a進行開閉,將第1反應器5a與第 2反應器5b連接之配管藉由切換閥6b進行開閉,將脫水裝置6與第2反應器5b連接之配管藉由切換閥6c進行開閉。藉由打開切換閥6a、6c並關閉切換閥6b,使自第1反應器5a流出之氬氣經由脫水裝置6而導入至第2反應器5b內,藉由關閉切換閥6a、6c並打開切換閥6b,使自第1反應器5a流出之氬氣直接導入至第2反應器5b內。藉此,於無需使自第1反應器5a流出之氬氣導入至脫水裝置6內時,可將自第1反應器5a流出之氬氣直接導入至第2反應器5b內。 The dehydration device 6 is disposed between the first reactor 5a and the second reactor 5b, and can reduce the water content in the argon gas flowing out of the first reactor 5a. In the present embodiment, the argon gas flowing out of the first reactor 5a is introduced into the second reactor 5b via the dehydration device 6 or directly. In other words, the pipe connecting the first reactor 5a and the dewatering device 6 is opened and closed by the switching valve 6a, and the first reactor 5a and the first reactor are provided. The pipe to which the reactor 5b is connected is opened and closed by the switching valve 6b, and the pipe connecting the dehydrating device 6 and the second reactor 5b is opened and closed by the switching valve 6c. By opening the switching valves 6a and 6c and closing the switching valve 6b, the argon gas flowing out of the first reactor 5a is introduced into the second reactor 5b via the dehydrating device 6, and the switching valves 6a and 6c are closed and the switching is turned on. The valve 6b directly introduces the argon gas flowing out of the first reactor 5a into the second reactor 5b. Thereby, when it is not necessary to introduce the argon gas flowing out of the first reactor 5a into the dehydration device 6, the argon gas flowing out from the first reactor 5a can be directly introduced into the second reactor 5b.

脫水裝置6之構成只要可於使用第1反應用觸媒之反應與下述使用第2反應用觸媒之反應之間藉由脫水處理而降低氬氣中之含水率則並無限定。作為脫水裝置6,例如可使用對氬氣進行加壓,藉由吸附劑吸附氬氣中之水分,並於減壓下使該吸附劑再生之加壓式脫水裝置;將藉由加壓冷卻氬氣而冷凝之水分除去之冷凍式脫水裝置;藉由脫水劑除去氬氣中所含之水分,並對該脫水劑進行加熱而使之再生的加熱再生式脫水裝置等。 The configuration of the dehydration device 6 is not limited as long as the water content in the argon gas can be reduced by dehydration treatment between the reaction using the first reaction catalyst and the reaction using the second reaction catalyst described below. As the dehydration device 6, for example, a pressurized dehydration device that pressurizes argon gas, adsorbs moisture in the argon gas by the adsorbent, and regenerates the adsorbent under reduced pressure; and argon is cooled by pressurization; A refrigerating type dehydrating device that removes moisture and condensed water; a heated regenerative dehydrating device that removes moisture contained in argon gas by a dehydrating agent, and regenerates the dehydrating agent to regenerate it.

藉由一氧化碳供給器9,向自脫水裝置6或第1反應器5a流出並導入至第2反應器5b內之氬氣中添加一氧化碳。所添加之一氧化碳與氬氣一併導入至第2反應器5b內。藉由該一氧化碳之添加,使導入至第2反應器5b內之氬氣中之一氧化碳量成為超過與該氬氣中所殘留之全部氧進行反應所需之設定量者。於本實施形態中,上述一氧化碳之設定量設為與上述氬氣中之全部氧進行反應所需之一氧化碳之化學計量。於該情形時,藉由使氬氣中之一氧化碳莫耳濃 度超過於第1反應器5a出口處所計測之氧莫耳濃度之2倍,而使氬氣中之一氧化碳量超過上述化學計量。 Carbon monoxide is added to the argon gas which is discharged from the dehydration device 6 or the first reactor 5a and introduced into the second reactor 5b by the carbon monoxide feeder 9. One of the added carbon oxides is introduced into the second reactor 5b together with the argon gas. By the addition of the carbon monoxide, the amount of carbon monoxide in the argon gas introduced into the second reactor 5b is set to exceed the amount required to react with all of the oxygen remaining in the argon gas. In the present embodiment, the carbon monoxide is set to a stoichiometric amount of carbon monoxide required for reaction with all of the oxygen in the argon gas. In this case, by making one of the argon gases carbon monoxide The degree exceeds twice the oxygen molar concentration measured at the outlet of the first reactor 5a, and the amount of carbon monoxide in the argon gas exceeds the above stoichiometric amount.

上述一氧化碳之設定量並非必需為上述化學計量,只要為上述化學計量以上即可。例如較佳為設為上述化學計量之1.05倍~2.0倍之值,藉由設為1.05倍以上,可使氬氣中之一氧化碳確實地與殘留氧進行反應以消耗殘留氧,藉由設為2.0倍以下,可防止所殘留之一氧化碳濃度變高至所需以上。 The amount of carbon monoxide to be set is not necessarily the above stoichiometric amount, and may be at least the above stoichiometric amount. For example, it is preferably set to a value of 1.05 times to 2.0 times the stoichiometric amount, and by setting it to 1.05 times or more, one of the oxidized carbon in the argon gas can be surely reacted with the residual oxygen to consume residual oxygen, and is set to 2.0. When the ratio is less than the above, it is possible to prevent the concentration of one of the remaining carbon oxides from becoming higher than necessary.

一氧化碳供給器9可由例如具有流量控制閥之高壓一氧化碳容器之類的可以與氬氣向第2反應器5b之導入流量對應之流量添加一氧化碳者所構成。再者,較佳為設置用以於該一氧化碳供給前對導入至第2反應器5b內之氬氣進行採樣之採樣線,於該採樣線上設置氧分析儀及一氧化碳分析儀,又,於自第2反應器5b流出並導入至吸附裝置7內之前之氬氣之採樣線上設置一氧化碳分析儀。藉此,藉由連續地監視氬氣中之雜質組成,可更確實地添加微過剩之一氧化碳。 The carbon monoxide supply unit 9 can be composed of, for example, a high-pressure carbon monoxide container having a flow rate control valve, which can add carbon monoxide to a flow rate corresponding to the introduction flow rate of the argon gas to the second reactor 5b. Furthermore, it is preferable to provide a sampling line for sampling the argon gas introduced into the second reactor 5b before the supply of the carbon monoxide, and an oxygen analyzer and a carbon monoxide analyzer are disposed on the sampling line, and 2 The carbon monoxide analyzer is disposed on the sampling line of the argon gas before the reactor 5b flows out and is introduced into the adsorption device 7. Thereby, by continuously monitoring the impurity composition in the argon gas, it is possible to more reliably add a slight excess of carbon monoxide.

於第2反應器5b內收容有釕(Ru)、銠、或該等之混合物作為第2反應用觸媒,以便藉由於第2反應器5b內使氬氣中之氧與一氧化碳反應而於殘留有一氧化碳之狀態下生成二氧化碳。較佳為使上述釕、銠、或該等之混合物擔載於氧化鋁上。 In the second reactor 5b, ruthenium (Ru), ruthenium, or the like is contained as a second reaction catalyst so as to be residual by reacting oxygen in the argon gas with carbon monoxide in the second reactor 5b. Carbon dioxide is produced in the presence of carbon monoxide. Preferably, the above ruthenium, osmium, or a mixture of the above is supported on alumina.

第2反應器5b中之反應溫度越高,越容易因一氧化碳與水之反應而產生氫,另一方面,反應溫度越低,越會因一 氧化碳阻礙第2反應用觸媒之作用之中毒現象而妨礙氧與一氧化碳之反應。又,導入至第2反應器5b內之氬氣中之殘留氧濃度越高,越需增大一氧化碳之添加量,促進氧與一氧化碳之反應。另一方面,一氧化碳之添加量越多,越容易因一氧化碳與水之反應而產生氫,且一氧化碳越容易阻礙第2反應用觸媒之作用。因此,第2反應器5b中之氬氣之氧濃度、一氧化碳濃度、及反應溫度較佳為限制於進行純化方面可獲得適宜條件之範圍內。例如若反應溫度未達50℃,則氧與一氧化碳之反應性下降,若為130℃以上,則容易因一氧化碳與水之反應而產生氫。因此,較佳為將反應溫度設為50℃~130℃,將一氧化碳之莫耳濃度設為氧莫耳濃度之2.1倍~2.4倍或3000莫耳ppm以下,將氧之莫耳濃度設為1000莫耳ppm以下。 The higher the reaction temperature in the second reactor 5b, the easier it is to generate hydrogen due to the reaction of carbon monoxide with water. On the other hand, the lower the reaction temperature, the more the The carbon oxide hinders the poisoning phenomenon of the action of the second reaction catalyst and hinders the reaction of oxygen with carbon monoxide. Further, the higher the residual oxygen concentration in the argon gas introduced into the second reactor 5b, the more the amount of carbon monoxide added is required to promote the reaction of oxygen with carbon monoxide. On the other hand, the more the amount of carbon monoxide added, the more easily hydrogen is generated by the reaction of carbon monoxide with water, and the carbon monoxide is more likely to hinder the action of the second reaction catalyst. Therefore, the oxygen concentration, the carbon monoxide concentration, and the reaction temperature of the argon gas in the second reactor 5b are preferably limited to a range in which appropriate conditions can be obtained for purification. For example, when the reaction temperature is less than 50 ° C, the reactivity of oxygen with carbon monoxide is lowered, and when it is 130 ° C or more, hydrogen is easily generated by the reaction of carbon monoxide with water. Therefore, it is preferred to set the reaction temperature to 50° C. to 130° C., and to set the molar concentration of carbon monoxide to 2.1 times to 2.4 times or less than 3,000 mol ppm of the oxygen molar concentration, and set the molar concentration of oxygen to 1000. Moer ppm or less.

自第2反應器5b流出之氬氣係藉由經冷卻器C冷卻而降低水分後到達吸附裝置7內。吸附裝置7具有PSA單元10與TSA單元20。 The argon gas flowing out of the second reactor 5b is cooled by the cooler C to lower the moisture and then reaches the adsorption device 7. The adsorption device 7 has a PSA unit 10 and a TSA unit 20.

PSA單元10係藉由常溫下之變壓吸附法使氬氣中之至少一氧化碳、二氧化碳、水、及氮吸附於吸附劑。經冷卻器C冷卻之氬氣導入至PSA單元10內。藉此,第1反應器5a中所生成之二氧化碳與水、及第2反應器5b中所生成之二氧化碳與殘留之一氧化碳與氬氣中最初便含有之氮一併在PSA單元10中吸附於吸附劑。又,於導入至PSA單元10內之氬氣中殘留烴之情形時,亦可吸附該烴。 The PSA unit 10 adsorbs at least carbon monoxide, carbon dioxide, water, and nitrogen in the argon gas to the adsorbent by a pressure swing adsorption method at normal temperature. The argon gas cooled by the cooler C is introduced into the PSA unit 10. Thereby, the carbon dioxide and water generated in the first reactor 5a and the carbon dioxide generated in the second reactor 5b are adsorbed to the adsorption in the PSA unit 10 together with the residual carbon monoxide and the nitrogen originally contained in the argon gas. Agent. Further, in the case where hydrocarbons are left in the argon gas introduced into the PSA unit 10, the hydrocarbons may be adsorbed.

PSA單元10可使用公知者。例如圖2所示之PSA單元10為 4塔式,包含對自第2反應器5b流出之氬氣進行壓縮之壓縮機12、及4個第1~第4吸附塔13,於各吸附塔13內填充有吸附劑。該吸附劑為可吸附一氧化碳、二氧化碳、水、及氮者,於本實施形態中使用活性氧化鋁與X型沸石,作為X型沸石,較佳為Li-X型或Ca-X型之合成沸石。活性氧化鋁與X型沸石於各吸附塔13中之配置並無特別限定,例如可設為層狀並交替配置。活性氧化鋁與X型沸石之重量比較佳為設為5/95~30/70。於設為2層狀並交替配置之情形時,較佳為於氬氣流路之上游配置活性氧化鋁,於下游配置X型沸石。 The PSA unit 10 can use a well-known person. For example, the PSA unit 10 shown in FIG. 2 is The four-column type includes a compressor 12 that compresses argon gas flowing out of the second reactor 5b, and four first to fourth adsorption towers 13, and each of the adsorption towers 13 is filled with an adsorbent. The adsorbent is capable of adsorbing carbon monoxide, carbon dioxide, water, and nitrogen. In the present embodiment, activated alumina and X-type zeolite are used, and as the X-type zeolite, a synthetic zeolite of Li-X type or Ca-X type is preferable. . The arrangement of the activated alumina and the X-type zeolite in each adsorption tower 13 is not particularly limited, and for example, it may be layered and alternately arranged. The weight of the activated alumina and the X-type zeolite is preferably set to 5/95 to 30/70. In the case where the two layers are alternately arranged, it is preferred to arrange activated alumina upstream of the argon gas flow path and to arrange the X-type zeolite downstream.

壓縮機12經由切換閥13b而與各吸附塔13之入口13a連接。 The compressor 12 is connected to the inlet 13a of each adsorption tower 13 via a switching valve 13b.

吸附塔13之入口13a分別經由切換閥13e及消音器13f而連接至大氣中。 The inlet 13a of the adsorption tower 13 is connected to the atmosphere via a switching valve 13e and a muffler 13f, respectively.

吸附塔13之出口13k分別經由切換閥13l而與流出配管13m連接,經由切換閥13n而與升壓配管13o連接,經由切換閥13p而與均壓/洗淨出側配管13q連接,經由切換閥13r而與均壓/洗淨入側配管13s連接。 The outlet 13k of the adsorption tower 13 is connected to the outflow pipe 13m via the switching valve 13l, is connected to the pressure increasing pipe 13o via the switching valve 13n, and is connected to the pressure equalizing/washing side pipe 13q via the switching valve 13p, via the switching valve. 13r is connected to the pressure equalizing/washing inlet side pipe 13s.

流出配管13m經由壓力調節閥13t而與製品儲罐T連接。 The outflow pipe 13m is connected to the product storage tank T via the pressure regulating valve 13t.

升壓配管13o經由流量控制閥13u、流量指示調節計13v而與流出配管13m連接,藉由將升壓配管13o內之流量調節為固定,而防止導入至製品儲罐T內之氬氣之流量變動。 The pressure increasing pipe 13o is connected to the outflow pipe 13m via the flow rate control valve 13u and the flow rate indicating regulator 13v, and the flow rate of the argon gas introduced into the product storage tank T is prevented by adjusting the flow rate in the pressure increasing pipe 13o to be fixed. change.

均壓/洗淨出側配管13q與均壓/洗淨入側配管13s經由一對連結配管13w而相互連接,於各連結配管13w上設置有 切換閥13x。 The pressure equalizing/cleaning side pipe 13q and the pressure equalizing/washing inlet pipe 13s are connected to each other via a pair of connecting pipes 13w, and each connecting pipe 13w is provided with Switching valve 13x.

於PSA單元10之第1~第4吸附塔13各自中依序進行吸附步驟、減壓I步驟(洗淨氣體導出步驟)、減壓II步驟(均壓氣體導出步驟)、解吸步驟、洗淨步驟(洗淨氣體導入步驟)、升壓I步驟(均壓氣體導入步驟)、升壓II步驟。以第1吸附塔13為基準對各步驟進行如下說明。 The adsorption step, the pressure reduction I step (clean gas extraction step), the pressure reduction II step (pressure equalization gas extraction step), the desorption step, and the cleaning are sequentially performed in each of the first to fourth adsorption columns 13 of the PSA unit 10. The step (clean gas introduction step), the pressure increase I step (pressure equalization gas introduction step), and the pressure increase step II. Each step will be described below based on the first adsorption tower 13.

即,第1吸附塔13中僅打開切換閥13b與切換閥13l,自第2反應器5b供給之氬氣自壓縮機12經由切換閥13b而導入至第1吸附塔13內。藉此,藉由於第1吸附塔13中使導入之氬氣中之至少氮、一氧化碳、二氧化碳及水分吸附於吸附劑而進行吸附步驟,並將雜質之含有率降低之氬氣自第1吸附塔13經由流出配管13m而送至製品儲罐T內。此時,送至流出配管13m內之氬氣之一部分經由升壓配管13o、流量控制閥13u而送至第2吸附塔13內,於第2吸附塔13中進行升壓II步驟。 In other words, only the switching valve 13b and the switching valve 13l are opened in the first adsorption tower 13, and the argon gas supplied from the second reactor 5b is introduced into the first adsorption tower 13 from the compressor 12 via the switching valve 13b. Thereby, the adsorption step is performed by adsorbing at least nitrogen, carbon monoxide, carbon dioxide, and water in the introduced argon gas to the adsorbent in the first adsorption tower 13, and the argon gas having a lower impurity content is removed from the first adsorption tower. 13 is sent to the product storage tank T via the outflow pipe 13m. At this time, one of the argon gas sent to the outflow pipe 13m is sent to the second adsorption tower 13 via the pressure increasing pipe 13o and the flow rate control valve 13u, and the second adsorption tower 13 performs the pressure increasing step II.

繼而,關閉第1吸附塔13之切換閥13b、13l,打開切換閥13p,打開第4吸附塔13之切換閥13r,打開切換閥13x中之1個。藉此,第1吸附塔13之上部之雜質含有率相對較小之氬氣經由均壓/洗淨入側配管13s而送至第4吸附塔13內,從而於第1吸附塔13中進行減壓I步驟。此時,於第4吸附塔13中打開切換閥13e,進行洗淨步驟。 Then, the switching valves 13b and 13l of the first adsorption tower 13 are closed, the switching valve 13p is opened, the switching valve 13r of the fourth adsorption tower 13 is opened, and one of the switching valves 13x is opened. In this way, the argon gas having a relatively small impurity content in the upper portion of the first adsorption tower 13 is sent to the fourth adsorption tower 13 via the pressure equalization/washing inlet side pipe 13s, thereby being reduced in the first adsorption tower 13. Press I step. At this time, the switching valve 13e is opened in the fourth adsorption tower 13, and a washing step is performed.

繼而,保持第1吸附塔13之切換閥13p與第4吸附塔13之切換閥13r打開之狀態,關閉第4吸附塔13之切換閥13e。藉此,進行減壓II步驟,該減壓II步驟係對第4吸附塔13實 施氣體之回收直至第1吸附塔13與第4吸附塔13之內部壓力變得均勻、或大致均勻為止。此時,切換閥13x根據情況亦可兩個均打開。 Then, the switching valve 13p of the first adsorption tower 13 and the switching valve 13r of the fourth adsorption tower 13 are kept open, and the switching valve 13e of the fourth adsorption tower 13 is closed. Thereby, a pressure reduction II step is performed, which is performed on the fourth adsorption tower 13 The gas is recovered until the internal pressure of the first adsorption tower 13 and the fourth adsorption tower 13 becomes uniform or substantially uniform. At this time, the switching valve 13x may be opened both depending on the situation.

繼而,藉由打開第1吸附塔13之切換閥13e,關閉切換閥13p,而進行自吸附劑解吸雜質之解吸步驟,將雜質與氣體一併經由消音器13f放出至大氣中。 Then, by opening the switching valve 13e of the first adsorption tower 13, the switching valve 13p is closed, and the desorption step of desorbing impurities from the adsorbent is performed, and the impurities are released together with the gas to the atmosphere via the muffler 13f.

繼而,打開第1吸附塔13之切換閥13r,關閉吸附步驟結束之狀態之第2吸附塔13之切換閥13b、13l,打開切換閥13p。藉此,第2吸附塔13之上部之雜質含有率相對較小之氬氣經由均壓/洗淨入側配管13s而送至第1吸附塔13內,於第1吸附塔13中進行洗淨步驟。於第1吸附塔13內經洗淨步驟中使用之氣體經由切換閥13e、消音器13f而放出至大氣中。此時,於第2吸附塔13中進行減壓I步驟。 Then, the switching valve 13r of the first adsorption tower 13 is opened, and the switching valves 13b and 13l of the second adsorption tower 13 in the state where the adsorption step is completed are closed, and the switching valve 13p is opened. In this way, the argon gas having a relatively small impurity content in the upper portion of the second adsorption column 13 is sent to the first adsorption column 13 through the pressure equalization/washing inlet pipe 13s, and is washed in the first adsorption column 13 step. The gas used in the washing step in the first adsorption tower 13 is released to the atmosphere via the switching valve 13e and the muffler 13f. At this time, the pressure reduction I step is performed in the second adsorption tower 13.

繼而,保持第2吸附塔13之切換閥13p與第1吸附塔13之切換閥13r打開之狀態,關閉第1吸附塔13之切換閥13e,藉此進行升壓I步驟。此時,切換閥13x根據情況亦可兩個均打開。 Then, the switching valve 13p of the second adsorption tower 13 and the switching valve 13r of the first adsorption tower 13 are kept open, and the switching valve 13e of the first adsorption tower 13 is closed, thereby performing the step of boosting I. At this time, the switching valve 13x may be opened both depending on the situation.

其後,關閉第1吸附塔13之切換閥13r。藉此,暫時成為無步驟之待機狀態。該狀態持續至第4吸附塔13之升壓II步驟結束為止。若第4吸附塔13之升壓結束,吸附步驟自第3吸附塔13切換至第4吸附塔13,則打開第1吸附塔之切換閥13n。藉此,自處於吸附步驟之第4吸附塔13送至流出配管13m內之氬氣之一部分經由升壓配管13o、流量控制閥13u而送至第1吸附塔13內,藉此於第1吸附塔13中進行升壓步 驟。 Thereafter, the switching valve 13r of the first adsorption tower 13 is closed. Thereby, it is temporarily a standby state without steps. This state continues until the end of the step 2 of the boosting of the fourth adsorption tower 13. When the pressure increase of the fourth adsorption tower 13 is completed and the adsorption step is switched from the third adsorption tower 13 to the fourth adsorption tower 13, the switching valve 13n of the first adsorption tower is opened. Thereby, one of the argon gas sent from the fourth adsorption tower 13 in the adsorption step to the outflow pipe 13m is sent to the first adsorption tower 13 via the pressure increasing pipe 13o and the flow rate control valve 13u, thereby being adsorbed to the first adsorption column 13 Step-up step in tower 13 Step.

藉由於第1~第4吸附塔13各自中依序重複進行上述各步驟,而將雜質含有率降低之氬氣連續地送至製品儲罐T內。 By repeating each of the above steps in the first to fourth adsorption columns 13, the argon gas having a reduced impurity content is continuously supplied to the product storage tank T.

再者,PSA單元10並不限定於圖2所示者,例如塔數亦可為4以外,例如2或3。 Further, the PSA unit 10 is not limited to the one shown in FIG. 2, and for example, the number of towers may be other than 4, for example, 2 or 3.

將包含PSA單元10中未吸附於吸附劑之氮的氬氣導入至TSA單元20內。TSA單元20係藉由-10℃~-50℃下之變溫吸附法使氬氣中之氮吸附於吸附劑。 Argon gas containing nitrogen not adsorbed to the adsorbent in the PSA unit 10 is introduced into the TSA unit 20. The TSA unit 20 adsorbs nitrogen in the argon gas to the adsorbent by a temperature swing adsorption method at -10 ° C to -50 ° C.

TSA單元20可使用公知者。例如圖3所示之TSA單元20為2塔式,包含對自PSA單元10送來之氬氣進行預冷之熱交換型預冷器21、對經預冷器21冷卻之氬氣進一步進行冷卻之熱交換型冷卻器22、第1及第2吸附塔23、以及覆蓋各吸附塔23之熱交換部24。熱交換部24係於吸附步驟時利用冷媒冷卻吸附劑,於解吸步驟時利用熱媒加熱吸附劑。各吸附塔23具有多根填充有吸附劑之內管。作為該吸附劑,使用適於氮之吸附者,例如較佳為使用經鈣(Ca)或鋰(Li)進行離子交換而成之X型沸石系吸附劑,進而,尤佳為設為離子交換率70%以上,尤佳為設為比表面積600 m2/g以上。 The TSA unit 20 can use a well-known person. For example, the TSA unit 20 shown in FIG. 3 is a 2-tower type, and includes a heat exchange type pre-cooler 21 that pre-cools argon gas sent from the PSA unit 10, and further cools the argon gas cooled by the pre-cooler 21. The heat exchange cooler 22, the first and second adsorption towers 23, and the heat exchange unit 24 covering the adsorption towers 23. The heat exchange unit 24 cools the adsorbent by a refrigerant during the adsorption step, and heats the adsorbent with a heat medium during the desorption step. Each adsorption tower 23 has a plurality of inner tubes filled with an adsorbent. As the adsorbent, an adsorber suitable for nitrogen is used. For example, an X-type zeolite-based adsorbent obtained by ion exchange with calcium (Ca) or lithium (Li) is preferably used, and more preferably, it is ion-exchanged. The rate is 70% or more, and it is particularly preferable to set the specific surface area to 600 m 2 /g or more.

冷卻器22經由切換閥23b而與各吸附塔23之入口23a連接。 The cooler 22 is connected to the inlet 23a of each adsorption tower 23 via the switching valve 23b.

吸附塔23之入口23a分別經由切換閥23c而連通至大氣中。 The inlet 23a of the adsorption tower 23 is communicated to the atmosphere via the switching valve 23c, respectively.

吸附塔23之出口23e分別經由切換閥23f而與流出配管23g連接,經由切換閥23h而與冷卻/升壓用配管23i連接,經由切換閥23j而與洗淨用配管23k連接。 The outlet 23e of the adsorption tower 23 is connected to the outflow pipe 23g via the switching valve 23f, is connected to the cooling/boosting pipe 23i via the switching valve 23h, and is connected to the cleaning pipe 23k via the switching valve 23j.

流出配管23g構成預冷器21之一部分,藉由自流出配管23g流出之經純化之氬氣而將自PSA單元10送來之氬氣冷卻。經純化之氬氣自流出配管23g經由切換閥23l而流出。 The outflow pipe 23g constitutes a part of the precooler 21, and the argon gas sent from the PSA unit 10 is cooled by the purified argon gas flowing out from the outflow pipe 23g. The purified argon gas flows out from the outflow pipe 23g via the switching valve 23l.

冷卻/升壓用配管23i、洗淨用配管23k經由流量計23m、流量控制閥23o、切換閥23n而與流出配管23g連接。 The cooling/boosting pipe 23i and the cleaning pipe 23k are connected to the outflow pipe 23g via the flow meter 23m, the flow rate control valve 23o, and the switching valve 23n.

熱交換部24設為多管式,包含包圍構成吸附塔23之多根內管之外管24a、冷媒供給源24b、冷媒用散熱器24c、熱媒供給源24d、及熱媒用散熱器24e。又,設置有複數個切換閥24f,該切換閥24f係用以於使自冷媒供給源24b供給之冷媒經由外管24a及冷媒用散熱器24c而循環的狀態、與使自熱媒供給源24d供給之熱媒經由外管24a及熱媒用散熱器24e而循環的狀態之間進行切換。進而,由自冷媒用散熱器24c分支出之配管構成冷卻器22之一部分,於冷卻器22中藉由自冷媒供給源24b供給之冷媒將氬氣冷卻,且該冷媒回流至儲罐24g內。 The heat exchange unit 24 is a multi-tube type, and includes a plurality of inner tube outer tubes 24a constituting the adsorption tower 23, a refrigerant supply source 24b, a refrigerant radiator 24c, a heat medium supply source 24d, and a heat medium radiator 24e. . Further, a plurality of switching valves 24f for circulating the refrigerant supplied from the refrigerant supply source 24b through the outer tube 24a and the refrigerant radiator 24c and the self-heating medium supply source 24d are provided. The supplied heat medium is switched between the states in which the outer tube 24a and the heat medium radiator 24e circulate. Further, a pipe branched from the refrigerant radiator 24c constitutes a part of the cooler 22, and the refrigerant supplied from the refrigerant supply source 24b in the cooler 22 cools the argon gas, and the refrigerant flows back into the storage tank 24g.

於TSA單元20之第1、第2吸附塔23各自中依序進行吸附步驟、解吸步驟、洗淨步驟、冷卻步驟、升壓步驟。 The adsorption step, the desorption step, the washing step, the cooling step, and the step of increasing the pressure are sequentially performed in each of the first and second adsorption towers 23 of the TSA unit 20.

即,於TSA單元20中,自PSA單元10供給之氬氣於預冷器21、冷卻器22中進行冷卻後,經由切換閥23b導入至第1吸附塔23內。此時,藉由熱交換機24中冷媒循環而使第1吸附塔23成為冷卻至-10℃~-50℃之狀態,關閉切換閥 23c、23h、23j,打開切換閥23f,而使氬氣中所含有之至少氮吸附於吸附劑。藉此,於第1吸附塔23中進行吸附步驟,且雜質之含有率降低之純化氬氣自吸附塔23經由切換閥23l而流出,送至製品儲罐T內。 In other words, in the TSA unit 20, the argon gas supplied from the PSA unit 10 is cooled in the precooler 21 and the cooler 22, and then introduced into the first adsorption tower 23 via the switching valve 23b. At this time, the first adsorption tower 23 is cooled to -10 ° C to -50 ° C by the refrigerant circulation in the heat exchanger 24, and the switching valve is closed. 23c, 23h, and 23j, the switching valve 23f is opened, and at least nitrogen contained in the argon gas is adsorbed to the adsorbent. Thereby, the adsorption step is performed in the first adsorption tower 23, and the purified argon gas having a reduced impurity content rate flows out from the adsorption tower 23 via the switching valve 23l, and is sent to the product storage tank T.

於第1吸附塔23中進行吸附步驟之期間,於第2吸附塔23中進行解吸步驟、洗淨步驟、冷卻步驟、升壓步驟。 During the adsorption step in the first adsorption tower 23, a desorption step, a washing step, a cooling step, and a pressure increasing step are performed in the second adsorption tower 23.

即,於第2吸附塔23中,吸附步驟結束後,為實施解吸步驟,而關閉切換閥23b、23f,打開切換閥23c。藉此,於第2吸附塔23中,包含雜質之氬氣放出至大氣中,且壓力下降至大致大氣壓。於該解吸步驟中,於第2吸附塔23中將吸附步驟時使冷媒循環之熱交換部24之切換閥24f切換為關閉狀態而使冷媒之循環停止,且將自熱交換部24排出冷媒並使之返回至冷媒供給源24b內之切換閥24f切換為打開狀態。 In other words, in the second adsorption tower 23, after the adsorption step is completed, in order to carry out the desorption step, the switching valves 23b and 23f are closed, and the switching valve 23c is opened. Thereby, in the second adsorption tower 23, argon gas containing impurities is released into the atmosphere, and the pressure is lowered to substantially atmospheric pressure. In the second adsorption tower 23, the switching valve 24f of the heat exchange unit 24 that circulates the refrigerant in the adsorption step is switched to the closed state to stop the circulation of the refrigerant, and the refrigerant is discharged from the heat exchange unit 24. The switching valve 24f returned to the refrigerant supply source 24b is switched to the open state.

繼而,為於第2吸附塔23中實施洗淨步驟,而將第2吸附塔23之切換閥23c、23j與洗淨用配管23k之切換閥23n設為打開狀態,經熱交換型預冷器21中之熱交換而被加熱之純化氬氣之一部分經由洗淨用配管23k導入至第2吸附塔23內。藉此,於第2吸附塔23中,實施雜質自吸附劑之解吸與利用純化氬氣之洗淨,經該洗淨中使用之氬氣與雜質一併自切換閥23c放出至大氣中。於該洗淨步驟中,於第2吸附塔23中將用以使熱媒循環之熱交換部24之切換閥24f切換為打開狀態。 Then, in order to perform the washing step in the second adsorption tower 23, the switching valves 23c and 23j of the second adsorption tower 23 and the switching valve 23n of the cleaning piping 23k are turned on, and the heat exchange type precooler is used. One part of the purified argon heated by the heat exchange in the 21st is introduced into the second adsorption tower 23 through the cleaning pipe 23k. Thereby, in the second adsorption tower 23, desorption of impurities from the adsorbent and washing by the purified argon gas are performed, and the argon gas used for the cleaning is released together with the impurities from the switching valve 23c to the atmosphere. In the cleaning step, the switching valve 24f of the heat exchange unit 24 for circulating the heat medium is switched to the open state in the second adsorption tower 23.

繼而,為於第2吸附塔23中實施冷卻步驟,而將第2吸附 塔23之切換閥23j與洗淨用配管23k之切換閥23n設為關閉狀態,將第2吸附塔23之切換閥23h與冷卻/升壓用配管23i之切換閥23n設為打開狀態,從而自第1吸附塔23流出之純化氬氣之一部分經由冷卻/升壓用配管23i導入至第2吸附塔23內。藉此,將第2吸附塔23內冷卻後之純化氬氣經由切換閥23c而放出至大氣中。於該冷卻步驟中,將用以使熱媒循環之切換閥24f切換為關閉狀態而使熱媒循環停止,且將自熱交換部24內排出熱媒並使之返回至熱媒供給源24d內之切換閥24f切換為打開狀態。於熱媒之排出結束後,於第2吸附塔23中將用以使冷媒循環之熱交換部24之切換閥24f切換為打開狀態而設為冷媒循環狀態。該冷媒循環狀態持續至下一升壓步驟、及繼其後之吸附步驟結束為止。 Then, in order to perform the cooling step in the second adsorption tower 23, the second adsorption is performed. The switching valve 23j of the column 23 and the switching valve 23n of the cleaning pipe 23k are in a closed state, and the switching valve 23h of the second adsorption tower 23 and the switching valve 23n of the cooling/boosting pipe 23i are turned on. One of the purified argon gas flowing out of the first adsorption tower 23 is introduced into the second adsorption tower 23 via the cooling/boosting pipe 23i. Thereby, the purified argon gas cooled in the second adsorption tower 23 is discharged to the atmosphere via the switching valve 23c. In the cooling step, the switching valve 24f for circulating the heat medium is switched to the closed state to stop the heat medium circulation, and the heat medium is discharged from the heat exchange unit 24 and returned to the heat medium supply source 24d. The switching valve 24f is switched to the open state. After the discharge of the heat medium is completed, the switching valve 24f of the heat exchange unit 24 for circulating the refrigerant is switched to the open state in the second adsorption tower 23 to be in a refrigerant circulation state. The refrigerant circulation state continues until the next step of boosting, and the subsequent adsorption step is completed.

繼而,為於第2吸附塔23中實施升壓步驟,而關閉第2吸附塔23之切換閥23c,將自第1吸附塔23流出之純化氬氣之一部分導入至其中,藉此使第2吸附塔23之內部升壓。該升壓步驟持續至第2吸附塔23之內壓變得與第1吸附塔23之內壓大致相等為止。若升壓步驟結束,則關閉第2吸附塔23之切換閥23h與冷卻/升壓用配管23i之切換閥23n,藉此第2吸附塔23之所有切換閥23b、23c、23f、23h、23j均成為關閉狀態,從而第2吸附塔23成為待機狀態直至下一吸附步驟為止。 Then, in order to carry out the pressure increasing step in the second adsorption tower 23, the switching valve 23c of the second adsorption tower 23 is closed, and a part of the purified argon gas flowing out from the first adsorption tower 23 is introduced thereinto, thereby making the second The inside of the adsorption tower 23 is boosted. This pressure increasing step continues until the internal pressure of the second adsorption tower 23 becomes substantially equal to the internal pressure of the first adsorption tower 23. When the pressure increasing step is completed, the switching valve 23h of the second adsorption tower 23 and the switching valve 23n of the cooling/boosting piping 23i are closed, whereby all the switching valves 23b, 23c, 23f, 23h, 23j of the second adsorption tower 23 are closed. All of them are in a closed state, and the second adsorption tower 23 is in a standby state until the next adsorption step.

第2吸附塔23之吸附步驟係以與第1吸附塔23之吸附步驟相同之方式實施。於第2吸附塔23中進行吸附步驟之期 間,以與於第2吸附塔23中相同之方式於第1吸附塔23中進行解吸步驟、洗淨步驟、冷卻步驟、升壓步驟。 The adsorption step of the second adsorption tower 23 is carried out in the same manner as the adsorption step of the first adsorption tower 23. The adsorption step is performed in the second adsorption tower 23 The desorption step, the washing step, the cooling step, and the pressure increasing step are performed in the first adsorption tower 23 in the same manner as in the second adsorption tower 23.

再者,TSA單元20並不限定於圖3所示者,例如塔數亦可為2以上,例如3或4。 Further, the TSA unit 20 is not limited to the one shown in FIG. 3, and for example, the number of towers may be 2 or more, for example, 3 or 4.

根據上述純化裝置α,於將至少含有氧、氫、一氧化碳、烴、油分及氮作為雜質之氬氣回收並進行純化時,藉由活性碳吸附氬氣中所含有之油分。進而,藉由活性碳亦可吸附源自油分之烴之一部分,尤其可藉由活性碳有效地吸附碳數為1~6以外之烴。繼而,判定氬氣中之氧量是否超過與氬氣中之氫、一氧化碳、及烴全部進行反應所需之氧之設定量,於上述氧量為上述設定量以下之情形時,以超過設定量之方式添加氧。其後,使用銠作為第1反應用觸媒而使氬氣中之一氧化碳、氫、及烴與氧進行反應,藉此於殘留有氧之狀態下生成二氧化碳與水。藉此,氬氣中之主要雜質成為二氧化碳、水、氧、及氮。繼而,以氬氣中之一氧化碳量超過與上述殘留之全部氧進行反應所需之設定量的方式添加一氧化碳。其後,使用釕、銠、或該等之混合物作為第2反應用觸媒而使氬氣中之氧與一氧化碳進行反應,藉此於殘留有一氧化碳之狀態下生成二氧化碳。藉此,氬氣中之主要雜質成為水、一氧化碳、二氧化碳及氮。其後,藉由變壓吸附法使氬氣中之一氧化碳、二氧化碳、水、及氮吸附於吸附劑,而將該等自氬氣中除去。 According to the purification apparatus α, when argon gas containing at least oxygen, hydrogen, carbon monoxide, hydrocarbons, oil, and nitrogen as impurities is recovered and purified, the oil contained in the argon gas is adsorbed by the activated carbon. Further, the activated carbon can also adsorb a part of the hydrocarbon derived from the oil component, and in particular, the hydrocarbon having a carbon number of 1 to 6 can be efficiently adsorbed by the activated carbon. Then, it is determined whether the amount of oxygen in the argon gas exceeds a set amount of oxygen required to react with all of hydrogen, carbon monoxide, and hydrocarbons in the argon gas, and when the amount of oxygen is less than the above-described set amount, the amount exceeds the set amount. Add oxygen in the same way. Thereafter, ruthenium is used as the first reaction catalyst to cause carbon monoxide, hydrogen, and hydrocarbons in the argon gas to react with oxygen, whereby carbon dioxide and water are generated in a state in which oxygen remains. Thereby, the main impurities in the argon gas are carbon dioxide, water, oxygen, and nitrogen. Then, carbon monoxide is added in such a manner that the amount of carbon monoxide in the argon gas exceeds the amount required to react with all of the remaining residual oxygen. Thereafter, a mixture of ruthenium, osmium, or the like is used as a second reaction catalyst to react oxygen in argon with carbon monoxide, thereby generating carbon dioxide in a state in which carbon monoxide remains. Thereby, the main impurities in the argon gas are water, carbon monoxide, carbon dioxide, and nitrogen. Thereafter, one of carbon monoxide, carbon dioxide, water, and nitrogen in the argon gas is adsorbed to the adsorbent by a pressure swing adsorption method, and the particles are removed from the argon gas.

即,純化裝置α藉由利用活性碳有效地吸附油分與碳數為1~6以外之烴,而降低氬氣中之烴量。藉此,可降低因 其後之烴與氧之反應而生成之水與二氧化碳之量,並且可減輕其後之吸附裝置7中之吸附負荷。又,用作第1反應用觸媒之銠之耐熱性良好且反應性較高,因此於氬氣含有大量如甲烷之類的低級烴之情形時,可提高反應溫度使反應充分地進行,而有效地降低氬氣中之烴。進而,藉由使用釕、銠、或該等之混合物作為第2反應用觸媒,可抑制水與一氧化碳之反應而防止產生氫。藉此,由於可防止於利用吸附裝置7之吸附處理中不易除去之氫殘留於氬氣中,故而可高純度地純化氬氣。又,由於可於利用吸附裝置7之吸附處理之預處理階段中自氬氣中除去氧,故而可減輕純化負荷,藉由吸附裝置7有效地除去雜質。進而,藉由使用活性氧化鋁與X型沸石作為用於變壓吸附法之吸附劑,可利用活性氧化鋁進行氬氣中之水分及二氧化碳之吸附及解吸,而可提高利用X型沸石之一氧化碳、氮及烴之吸附效果。藉此,即便於利用吸附裝置7之吸附處理之前階段中烴殘留於氬氣中,亦可無需使PSA單元10大型化而藉由變壓吸附法有效地使烴吸附於吸附劑。 That is, the purification apparatus α reduces the amount of hydrocarbons in the argon gas by efficiently adsorbing the oil and the hydrocarbon having a carbon number of 1 to 6 by using the activated carbon. Thereby, the cause can be reduced Subsequent hydrocarbons react with oxygen to form water and carbon dioxide, and the adsorption load in the subsequent adsorption device 7 can be alleviated. Moreover, since the heat used for the first reaction catalyst is excellent in heat resistance and high in reactivity, when the argon gas contains a large amount of a lower hydrocarbon such as methane, the reaction temperature can be raised and the reaction proceeds sufficiently. Effectively reduce hydrocarbons in argon. Further, by using ruthenium, osmium, or a mixture thereof as the second reaction catalyst, the reaction between water and carbon monoxide can be suppressed to prevent generation of hydrogen. Thereby, since hydrogen which is hard to be removed by the adsorption treatment by the adsorption device 7 can be prevented from remaining in the argon gas, the argon gas can be purified with high purity. Further, since oxygen can be removed from the argon gas in the pretreatment stage of the adsorption treatment by the adsorption device 7, the purification load can be reduced, and the impurities can be effectively removed by the adsorption device 7. Further, by using activated alumina and X-type zeolite as an adsorbent for pressure swing adsorption, activated carbon can be used for adsorption and desorption of water and carbon dioxide in argon gas, thereby improving oxidation of carbon using one of X-type zeolites. , nitrogen and hydrocarbon adsorption effects. Thereby, even if the hydrocarbon remains in the argon gas in the stage before the adsorption treatment by the adsorption device 7, it is possible to efficiently adsorb the hydrocarbon to the adsorbent by the pressure swing adsorption method without increasing the size of the PSA unit 10.

又,根據上述純化裝置α,於使用第1反應用觸媒之反應與使用第2反應用觸媒之反應之間,藉由使用脫水裝置之脫水處理可降低氬氣中之含水率。藉此,可確實地抑制水與一氧化碳之反應而防止氫之產生。 Further, according to the purification apparatus α, the water content in the argon gas can be reduced by the dehydration treatment using the dehydration device between the reaction using the first reaction catalyst and the reaction using the second reaction catalyst. Thereby, the reaction of water and carbon monoxide can be surely suppressed to prevent the generation of hydrogen.

進而,根據上述純化裝置α,於利用變壓吸附法吸附雜質之後,藉由-10℃~-50℃下之變溫吸附法可使氬氣中之氮吸附於吸附劑。藉由如上所述般併用利用變溫吸附法之 吸附,可減輕PSA單元10之負荷,對應於純化前之氬氣中之雜質濃度之變動而確實地除去雜質。因此,可進一步提高純化後之氬氣之純度。又,可於利用變溫吸附法之吸附處理之預處理階段中自氬氣中除去氧,進而可利用變壓吸附法除去一氧化碳,因此可降低利用變溫吸附法之吸附處理時之冷卻能量。進而,可於利用變溫吸附法之吸附處理之預處理階段中自氬氣中除去烴,因此於用於變溫吸附法之吸附劑之再生時,無需使氮以外者自吸附劑脫離,而可降低再生能量。並且,可藉由使用活性氧化鋁與X型沸石作為PSA單元10中之吸附劑而提高氮之吸附效果,因此可減輕TSA單元20中之氮之吸附負荷,且更高純度地純化所回收之氬氣。 Further, according to the purification apparatus α, after adsorbing impurities by the pressure swing adsorption method, nitrogen in the argon gas can be adsorbed to the adsorbent by a temperature swing adsorption method at -10 ° C to -50 ° C. By using the temperature swing adsorption method in combination as described above The adsorption can reduce the load of the PSA unit 10, and the impurities are surely removed in accordance with the fluctuation of the impurity concentration in the argon gas before purification. Therefore, the purity of the purified argon gas can be further improved. Further, in the pretreatment stage of the adsorption treatment by the temperature swing adsorption method, oxygen can be removed from the argon gas, and the carbon monoxide can be removed by the pressure swing adsorption method, so that the cooling energy in the adsorption treatment by the temperature swing adsorption method can be reduced. Further, since the hydrocarbon can be removed from the argon gas in the pretreatment stage of the adsorption treatment by the temperature swing adsorption method, the regeneration of the adsorbent for the temperature swing adsorption method does not require the removal of the nitrogen from the adsorbent, but can be reduced. Regeneration energy. Further, by using activated alumina and X-type zeolite as the adsorbent in the PSA unit 10, the nitrogen adsorption effect can be enhanced, so that the nitrogen adsorption load in the TSA unit 20 can be alleviated, and the recovered product can be purified with higher purity. Argon.

[實施例1] [Example 1]

使用上述純化裝置α進行氬氣之純化。純化前之氬氣分別含有如下者作為雜質:氧200莫耳ppm、氫50莫耳ppm、一氧化碳1000莫耳ppm、氮750莫耳ppm、二氧化碳60莫耳ppm、水分500莫耳ppm、作為烴之甲烷20莫耳ppm、以C1之烴換算計為32莫耳ppm之C2~C6之烴、油分4.5 g/m3。於標準狀態下以4.0 L/min之流量將上述氬氣導入至活性碳吸附塔3內。活性碳吸附塔3係設為標稱直徑32A之管狀,且填充有Japan Enviro Chemicals製造之GX6/8成型碳10 L。 Purification of argon gas was carried out using the above purification apparatus α. The argon gas before purification contains the following as impurities: oxygen 200 mol ppm, hydrogen 50 mol ppm, carbon monoxide 1000 mol ppm, nitrogen 750 mol ppm, carbon dioxide 60 mol ppm, water 500 mppm ppm, as a hydrocarbon The methane is 20 mol ppm, and the C2 to C6 hydrocarbon is 32 mol ppm in terms of C1 hydrocarbon conversion, and the oil content is 4.5 g/m 3 . The above argon gas was introduced into the activated carbon adsorption column 3 at a flow rate of 4.0 L/min under standard conditions. The activated carbon adsorption column 3 was set to have a tubular shape with a nominal diameter of 32 A and was filled with GX6/8 molding carbon 10 L manufactured by Japan Enviro Chemicals.

繼而,自氧供給器8以3.2 ml/min之流量向自活性碳吸附塔3流出之氬氣中添加氧,並導入至第1反應器5a內。於第1反應器5a中填充氧化鋁擔載之銠(NE CHEMCAT製造之 0.5%氧化鋁顆粒)60 mL,反應條件設為溫度350℃、大氣壓、空間速度4000/h。於該情形時,氬氣中所含之氧為與氫、一氧化碳、及烴進行反應所需之理論值之約1.6倍。自一氧化碳供給器9以3.6 ml/min之流量向自第1反應器5a流出之氬氣中添加一氧化碳,並導入至第2反應器5b內。於該情形時,氬氣中所含之一氧化碳為消耗殘留氧所需之理論值之約1.2倍。於第2反應器5b中填充氧化鋁擔載之釕觸媒(Sud-Chemie公司製造之RUA3MM)60 ml,反應條件設為溫度110℃、大氣壓、空間速度4000/h。 Then, oxygen was supplied from the oxygen supply device 8 to the argon gas flowing out of the activated carbon adsorption column 3 at a flow rate of 3.2 ml/min, and introduced into the first reactor 5a. Filled with alumina in the first reactor 5a (manufactured by NE CHEMCAT) 0.5% alumina particles) 60 mL, and the reaction conditions were set to a temperature of 350 ° C, atmospheric pressure, and a space velocity of 4000 / h. In this case, the oxygen contained in the argon gas is about 1.6 times the theoretical value required for the reaction with hydrogen, carbon monoxide, and a hydrocarbon. Carbon monoxide was supplied from the carbon monoxide supply unit 9 to the argon gas flowing out of the first reactor 5a at a flow rate of 3.6 ml/min, and introduced into the second reactor 5b. In this case, one of the oxidized carbon contained in the argon gas is about 1.2 times the theoretical value required to consume residual oxygen. The second reactor 5b was filled with 60 ml of an alumina-supported catalyst (RUA3MM manufactured by Sud-Chemie Co., Ltd.) under the conditions of a temperature of 110 ° C, an atmospheric pressure, and a space velocity of 4000 / h.

將自第2反應器5b流出之氬氣冷卻,藉由吸附裝置7降低其雜質含有率。PSA單元10係設為4塔式,各塔設為標稱直徑32A、長度1 m之管狀,於各塔內填充有活性氧化鋁(住友化學製造之KHD-24)10 wt%、Li-X型沸石(Tosoh製造之NSA-700)90 wt%作為吸附劑。PSA單元10之操作條件設為吸附壓力0.8 MPaG、解吸壓力10 kPaG、循環時間400 sec/塔,且實施均壓15 sec。TSA單元20係設為2塔式,於各塔內填充有Ca-X型沸石(Tosoh製造之SA-600A)1.25 L作為吸附劑,吸附壓力設為0.8 MPaG,吸附溫度設為-35℃,解吸壓力設為0.1 MPaG,解吸溫度設為40℃。 The argon gas flowing out of the second reactor 5b is cooled, and the impurity content is lowered by the adsorption device 7. The PSA unit 10 is a four-tower type, and each column is set to have a nominal diameter of 32 A and a length of 1 m. The columns are filled with activated alumina (KHD-24 manufactured by Sumitomo Chemical Co., Ltd.) 10 wt%, Li-X. The zeolite (NSA-700 manufactured by Tosoh) is 90 wt% as an adsorbent. The operating conditions of the PSA unit 10 were set to an adsorption pressure of 0.8 MPaG, a desorption pressure of 10 kPaG, a cycle time of 400 sec/tower, and a pressure equalization of 15 sec. The TSA unit 20 is a two-stage type, and each column is filled with 1.25 L of Ca-X type zeolite (SA-600A manufactured by Tosoh) as an adsorbent, and the adsorption pressure is set to 0.8 MPaG, and the adsorption temperature is set to -35 ° C. The desorption pressure was set to 0.1 MPaG, and the desorption temperature was set to 40 °C.

該情形時之第1反應器5a之出口、第2反應器5b之出口、PSA單元10之出口、及TSA單元20之出口處之氬氣之雜質組成如下述表1所示。表1中之烴之組成表示甲烷濃度與C2~C6烴之C1烴換算濃度的合計。 In this case, the impurity composition of the outlet of the first reactor 5a, the outlet of the second reactor 5b, the outlet of the PSA unit 10, and the outlet of the TSA unit 20 is as shown in Table 1 below. The composition of the hydrocarbons in Table 1 represents the total of the methane concentration and the C1 hydrocarbon-converted concentration of the C2 to C6 hydrocarbons.

又,活性碳吸附塔3之出口處之氬氣之組成如下所示。 Further, the composition of the argon gas at the outlet of the activated carbon adsorption column 3 is as follows.

‧活性碳吸附塔出口 ‧ Activated carbon adsorption tower outlet

氫:50莫耳ppm、氧:200莫耳ppm、氮:750莫耳ppm、一氧化碳:1000莫耳ppm、二氧化碳:60莫耳ppm、甲烷:20莫耳ppm、C2~C6烴:以C1烴換算計為30莫耳ppm、水分:500莫耳ppm、油分:未達0.1 g/m3 Hydrogen: 50 mole ppm, oxygen: 200 mole ppm, nitrogen: 750 mole ppm, carbon monoxide: 1000 mole ppm, carbon dioxide: 60 mole ppm, methane: 20 mole ppm, C2 to C6 hydrocarbon: C1 hydrocarbon Conversion is 30 mole ppm, moisture: 500 mole ppm, oil: less than 0.1 g/m 3

再者,經純化之氬氣中之氧濃度係藉由GE Sensing & Inspection Technologies公司製造之氧分析儀DE-150ε進行測定,一氧化碳及二氧化素之濃度係經由甲烷化器(methanizer)並使用島津製作所製造之GC-FID進行測定,氫濃度係藉由GL science公司製造之GC-PDD進行測定,氮濃度係藉由ROUND SCIENCE公司製造之微量氮分析儀PES-2000型進行測定,烴濃度係藉由島津製作所製造之GC-FID進行測定,油分係藉由根據CKD製造之過濾器VFA1000之過濾之增量進行計算而求出,水分係使用GE Sensing & Inspection Technologies公司製造之露點計DEWMET-2進行測定。 Further, the oxygen concentration in the purified argon gas was measured by an oxygen analyzer DE-150 ε manufactured by GE Sensing & Inspection Technologies, and the concentrations of carbon monoxide and dioxin were passed through a methanizer and using Shimadzu. The GC-FID manufactured by the manufacturer was measured, and the hydrogen concentration was measured by GC-PDD manufactured by GL Science Co., Ltd., and the nitrogen concentration was measured by a trace nitrogen analyzer PES-2000 manufactured by ROUND SCIENCE, and the hydrocarbon concentration was measured. The measurement was carried out by GC-FID manufactured by Shimadzu Corporation, and the oil fraction was obtained by calculation based on the filtration increment of the filter VFA1000 manufactured by CKD, and the moisture was carried out using a dew point meter DEWMET-2 manufactured by GE Sensing & Inspection Technologies. Determination.

[實施例2] [Embodiment 2]

將第2反應器5b中所使用之觸媒設為氧化鋁擔載之銠(NE CHEMCAT製造之0.5%氧化鋁顆粒)。除此以外,於與實施例1相同之條件下純化氬氣。 The catalyst used in the second reactor 5b was made of alumina supported (0.5% alumina particles manufactured by NE CHEMCAT). Except for this, argon gas was purified under the same conditions as in Example 1.

該情形時之第1反應器5a之出口、第2反應器5b之出口、PSA單元10之出口、及TSA單元20之出口處之氬氣之雜質組成如表1所示。 The impurity composition of the outlet of the first reactor 5a, the outlet of the second reactor 5b, the outlet of the PSA unit 10, and the outlet of the TSA unit 20 in this case is shown in Table 1.

[比較例1] [Comparative Example 1]

將第1反應器5a中所使用之觸媒設為氧化鋁擔載之鉑(NE CHEMCAT製造之DASH-220),將第2反應器5b中所使用之觸媒設為氧化鋁擔載之鉑(NE CHEMCAT製造之DASH-220)。又,於PSA單元10之各吸附塔內僅填充Li-X型沸石作為吸附劑。除此以外,於與實施例1相同之條件下純化氬氣。 The catalyst used in the first reactor 5a is alumina-supported platinum (DASH-220 manufactured by NE CHEMCAT), and the catalyst used in the second reactor 5b is alumina-supported platinum. (DASH-220 manufactured by NE CHEMCAT). Further, only Li-X type zeolite was filled in the adsorption tower of the PSA unit 10 as an adsorbent. Except for this, argon gas was purified under the same conditions as in Example 1.

該情形時之第1反應器5a之出口、第2反應器5b之出口、PSA單元10之出口、及TSA單元20之出口處之氬氣之雜質組成如表1所示。 The impurity composition of the outlet of the first reactor 5a, the outlet of the second reactor 5b, the outlet of the PSA unit 10, and the outlet of the TSA unit 20 in this case is shown in Table 1.

[實施例3] [Example 3]

於標準狀態下以4.0 L/min之流量將自第1反應器5a流出之氬氣導入至脫水裝置6內。脫水裝置6係設為標稱直徑32A之管狀,且填充有活性氧化鋁(住友化學製造之KHD-24)8 L。自一氧化碳供給器9以3.6 ml/min之流量向自脫水裝置6流出之氬氣中添加一氧化碳,並導入至第2反應器5b內。於該情形時,氬氣中所含之一氧化碳為消耗殘留氧所需之理論值之約1.2倍。除此以外,於與實施例1相同之條件下純化氬氣。 The argon gas flowing out of the first reactor 5a was introduced into the dehydration unit 6 at a flow rate of 4.0 L/min in a standard state. The dewatering device 6 was set to have a tubular shape with a nominal diameter of 32 A and was filled with activated alumina (KHD-24 manufactured by Sumitomo Chemical Co., Ltd.) 8 L. Carbon monoxide was supplied from the carbon monoxide supply unit 9 to the argon gas flowing out of the dehydration unit 6 at a flow rate of 3.6 ml/min, and introduced into the second reactor 5b. In this case, one of the oxidized carbon contained in the argon gas is about 1.2 times the theoretical value required to consume residual oxygen. Except for this, argon gas was purified under the same conditions as in Example 1.

該情形時之第1反應器5a之出口、第2反應器5b之出口、PSA單元10之出口、及TSA單元20之出口處之氬氣之雜質組成如表2所示。 The impurity composition of the outlet of the first reactor 5a, the outlet of the second reactor 5b, the outlet of the PSA unit 10, and the outlet of the TSA unit 20 in this case is shown in Table 2.

[實施例4] [Example 4]

於標準狀態下以4.0 L/min之流量將自第1反應器5a流出之氬氣導入至脫水裝置6內。脫水裝置6係設為標稱直徑32A之管狀,且填充有活性氧化鋁(住友化學製造之KHD-24)8 L。自一氧化碳供給器9以3.6 ml/min之流量向自脫水裝置6流出之氬氣中添加一氧化碳,並導入至第2反應器5b內。於該情形時,氬氣中所含之一氧化碳為消耗殘留氧所需之理論值之約1.2倍。除此以外,於與實施例2相同之條件下純化氬氣。 The argon gas flowing out of the first reactor 5a was introduced into the dehydration unit 6 at a flow rate of 4.0 L/min in a standard state. The dewatering device 6 was set to have a tubular shape with a nominal diameter of 32 A and was filled with activated alumina (KHD-24 manufactured by Sumitomo Chemical Co., Ltd.) 8 L. Carbon monoxide was supplied from the carbon monoxide supply unit 9 to the argon gas flowing out of the dehydration unit 6 at a flow rate of 3.6 ml/min, and introduced into the second reactor 5b. In this case, one of the oxidized carbon contained in the argon gas is about 1.2 times the theoretical value required to consume residual oxygen. Except for this, argon gas was purified under the same conditions as in Example 2.

該情形時之第1反應器5a之出口、第2反應器5b之出口、PSA單元10之出口、及TSA單元20之出口處之氬氣之雜質組成如表2所示。 The impurity composition of the outlet of the first reactor 5a, the outlet of the second reactor 5b, the outlet of the PSA unit 10, and the outlet of the TSA unit 20 in this case is shown in Table 2.

[比較例2] [Comparative Example 2]

於標準狀態下以4.0 L/min之流量將自第1反應器5a流出之氬氣導入至脫水裝置6內。脫水裝置6係設為標稱直徑32A之管狀,且填充有活性氧化鋁(住友化學製造之KHD-24)8 L。自一氧化碳供給器9以3.6 ml/min之流量向自脫水裝置6流出之氬氣中添加一氧化碳,並導入至第2反應器5b內。於該情形時,氬氣中所含之一氧化碳為消耗殘留氧所需之理論值之約1.2倍。除此以外,於與比較例1相同之條件下純化氬氣。 The argon gas flowing out of the first reactor 5a was introduced into the dehydration unit 6 at a flow rate of 4.0 L/min in a standard state. The dewatering device 6 was set to have a tubular shape with a nominal diameter of 32 A and was filled with activated alumina (KHD-24 manufactured by Sumitomo Chemical Co., Ltd.) 8 L. Carbon monoxide was supplied from the carbon monoxide supply unit 9 to the argon gas flowing out of the dehydration unit 6 at a flow rate of 3.6 ml/min, and introduced into the second reactor 5b. In this case, one of the oxidized carbon contained in the argon gas is about 1.2 times the theoretical value required to consume residual oxygen. Except for this, argon gas was purified under the same conditions as in Comparative Example 1.

該情形時之第1反應器5a之出口、第2反應器5b之出口、PSA單元10之出口、及TSA單元20之出口處之氬氣之雜質組成如表2所示。 The impurity composition of the outlet of the first reactor 5a, the outlet of the second reactor 5b, the outlet of the PSA unit 10, and the outlet of the TSA unit 20 in this case is shown in Table 2.

[比較例3] [Comparative Example 3]

未進行吸附處理之預處理,而使用PSA單元10與TSA單元20僅藉由吸附處理進行氬氣之純化。純化前之氬氣含有一氧化碳5000莫耳ppm、氮5000莫耳ppm、二氧化碳1莫耳%作為雜質。PSA單元10係設為4塔式,各塔設為標稱直徑32A、長度1 m之管狀,於各塔內填充有活性氧化鋁(住友化學製造之KHD-24)10 wt%與Ca-A型沸石(UOP製造之5A-HP)90 wt%作為吸附劑。PSA單元10之操作條件係設為吸附壓力0.8 MPaG、解吸壓力10 kPaG、循環時間710 sec/塔,且於均壓15 sec之條件下純化氬氣。TSA單元20係設為2塔式,於各塔內填充有Ca-X型沸石(Tosoh製造之SA-600A)1.25 L作為吸附劑,吸附壓力設為0.8 MPaG,吸附溫度設為-35℃,解吸壓力設為0.1 MPaG,解吸溫度設為40℃。 The pretreatment of the adsorption treatment was not carried out, and the purification of argon gas was performed only by the adsorption treatment using the PSA unit 10 and the TSA unit 20. The argon gas before purification contained 5000 ppm of carbon monoxide, 5000 ppm of nitrogen, and 1 mol% of carbon dioxide as impurities. The PSA unit 10 is a 4-tower type, and each column is set to have a nominal diameter of 32 A and a length of 1 m. The columns are filled with activated alumina (KHD-24 manufactured by Sumitomo Chemical Co., Ltd.) 10 wt% and Ca-A. Zeolite (5A-HP manufactured by UOP) is 90 wt% as an adsorbent. The operating conditions of the PSA unit 10 were set to an adsorption pressure of 0.8 MPaG, a desorption pressure of 10 kPaG, a cycle time of 710 sec/tower, and argon gas was purified under a pressure equalization of 15 sec. The TSA unit 20 is a two-stage type, and each column is filled with 1.25 L of Ca-X type zeolite (SA-600A manufactured by Tosoh) as an adsorbent, and the adsorption pressure is set to 0.8 MPaG, and the adsorption temperature is set to -35 ° C. The desorption pressure was set to 0.1 MPaG, and the desorption temperature was set to 40 °C.

該情形時之PSA單元10之出口與TSA單元20之出口處之氬氣之雜質組成如表3所示。又,PSA單元10之出口處之氬氣之回收率為65.3%。 The impurity composition of the outlet of the PSA unit 10 and the outlet of the TSA unit 20 at this time is shown in Table 3. Further, the recovery rate of argon gas at the outlet of the PSA unit 10 was 65.3%.

[比較例4] [Comparative Example 4]

於PSA單元10之各吸附塔內填充活性氧化鋁(住友化學製造之KHD-24)30 wt%與Li-X型沸石(Tosoh製造之NSA-700)70 wt%作為吸附劑,將循環時間設為1000 sec/塔。除 此以外,於與比較例3相同之條件下純化氬氣。 The adsorption tower of the PSA unit 10 is filled with 30 wt% of activated alumina (KHD-24 manufactured by Sumitomo Chemical Co., Ltd.) and 70 wt% of Li-X type zeolite (NSA-700 manufactured by Tosoh) as an adsorbent, and the cycle time is set. It is 1000 sec/tower. except Except that, argon gas was purified under the same conditions as in Comparative Example 3.

該情形時之PSA單元10之出口與TSA單元20之出口處之氬氣之雜質組成如表3所示。又,PSA單元10之出口處之氬氣之回收率為75.2%。 The impurity composition of the outlet of the PSA unit 10 and the outlet of the TSA unit 20 at this time is shown in Table 3. Further, the recovery rate of argon gas at the outlet of the PSA unit 10 was 75.2%.

[比較例5] [Comparative Example 5]

於PSA單元10之各吸附塔內填充活性氧化鋁(住友化學製造之KHD-24)10 wt%與Li-X型沸石(Tosoh製造之NSA-700)90 wt%作為吸附劑,將循環時間設為770 sec/塔。除此以外,於與比較例3相同之條件下純化氬氣。 The adsorption tower of the PSA unit 10 is filled with activated alumina (KHD-24 manufactured by Sumitomo Chemical Co., Ltd.) 10 wt% and Li-X zeolite (NSA-700 manufactured by Tosoh) 90 wt% as an adsorbent, and the cycle time is set. It is 770 sec/tower. Except for this, argon gas was purified under the same conditions as in Comparative Example 3.

該情形時之PSA單元10之出口與TSA單元20之出口處之氬氣之雜質組成如表3所示。又,PSA單元10之出口處之氬氣之回收率為69%。 The impurity composition of the outlet of the PSA unit 10 and the outlet of the TSA unit 20 at this time is shown in Table 3. Further, the recovery rate of argon gas at the outlet of the PSA unit 10 was 69%.

由上述各實施例及各比較例可確認以下方面。 The following aspects can be confirmed from the above respective examples and comparative examples.

可確認藉由於第1反應器5a中使用銠觸媒,可有效地使烴反應,藉由於第2反應器5b中使用釕或銠觸媒,可防止產生氫。 It was confirmed that hydrocarbons can be efficiently reacted by using a ruthenium catalyst in the first reactor 5a, and hydrogen generation can be prevented by using ruthenium or ruthenium catalyst in the second reactor 5b.

可確認藉由將用於變壓吸附法之吸附劑設為活性氧化鋁與X型沸石,可有效地吸附烴。 It was confirmed that the adsorbent used in the pressure swing adsorption method can be effectively adsorbed by using the activated alumina and the X-type zeolite.

由實施例1、2可確認,PSA單元10之出口處之氬氣之氮濃度充分地降低,可高純度地純化所回收之氬氣。又,可確認TSA單元20之出口處之氬氣之氮濃度進一步降低。 From Examples 1 and 2, it was confirmed that the nitrogen concentration of the argon gas at the outlet of the PSA unit 10 was sufficiently lowered, and the recovered argon gas was purified with high purity. Further, it can be confirmed that the nitrogen concentration of the argon gas at the outlet of the TSA unit 20 is further lowered.

雖比較例5中之PSA單元10之出口處之氬氣之氮濃度低於比較例4中之PSA單元10之出口處之氬氣之氮濃度,但比較例5之循環時間短於比較例4,因此廢棄之氬氣較多,氬氣之回收率下降。另一方面,比較例4及比較例5中之TSA單元20之出口處之氬氣之氮濃度降低至相同程度。因此,可確認藉由併用TSA單元可減輕PSA單元之負荷。 Although the nitrogen concentration of the argon gas at the outlet of the PSA unit 10 in Comparative Example 5 was lower than the nitrogen concentration of the argon gas at the outlet of the PSA unit 10 in Comparative Example 4, the cycle time of Comparative Example 5 was shorter than that of Comparative Example 4. Therefore, more argon gas is discarded, and the recovery rate of argon gas is lowered. On the other hand, the nitrogen concentration of the argon gas at the outlet of the TSA unit 20 in Comparative Example 4 and Comparative Example 5 was lowered to the same extent. Therefore, it can be confirmed that the load of the PSA unit can be alleviated by using the TSA unit in combination.

由比較例3、5可確認,藉由將用於變壓吸附法之吸附劑設為活性氧化鋁與Li-X型沸石,與使用活性氧化鋁與Ca-A型沸石之情形相比,可降低純化後之氬氣之氮濃度。進而,由比較例4、5可確認,即便於僅藉由吸附處理進行純化之情形時,亦可充分地降低氬氣之氮濃度。 It can be confirmed from Comparative Examples 3 and 5 that the adsorbent used for the pressure swing adsorption method is made of activated alumina and Li-X type zeolite, and compared with the case of using activated alumina and Ca-A type zeolite. Reduce the nitrogen concentration of the argon after purification. Further, from Comparative Examples 4 and 5, it was confirmed that the nitrogen concentration of argon gas can be sufficiently reduced even when the purification is carried out only by the adsorption treatment.

本發明並不限定於上述實施形態或實施例。例如用於回收氬氣之機器並不限定於如油旋轉真空泵之類的使用油之機器,例如亦可使用無油真空泵。又,根據氬氣之純度之要求,亦可省略TSA單元。 The present invention is not limited to the above embodiments or examples. For example, a machine for recovering argon gas is not limited to a machine using oil such as an oil rotary vacuum pump, and for example, an oil-free vacuum pump can also be used. Further, the TSA unit may be omitted depending on the purity of the argon gas.

1‧‧‧氬氣供給源 1‧‧‧ argon supply source

2‧‧‧過濾器 2‧‧‧Filter

3‧‧‧活性碳吸附塔 3‧‧‧Active carbon adsorption tower

4‧‧‧加熱器 4‧‧‧heater

5‧‧‧反應裝置 5‧‧‧Reaction device

5a‧‧‧第1反應器 5a‧‧‧1st reactor

5b‧‧‧第2反應器 5b‧‧‧2nd reactor

6‧‧‧脫水裝置 6‧‧‧Dehydration device

6a、6b、6c‧‧‧切換閥 6a, 6b, 6c‧‧‧ switching valve

7‧‧‧吸附裝置 7‧‧‧Adsorption device

8‧‧‧氧供給器 8‧‧‧Oxygen feeder

9‧‧‧一氧化碳供給器 9‧‧‧ Carbon monoxide feeder

10‧‧‧PSA單元 10‧‧‧PSA unit

20‧‧‧TSA單元 20‧‧‧TSA unit

C‧‧‧冷卻器 C‧‧‧cooler

T‧‧‧製品儲罐 T‧‧‧ product storage tank

α‧‧‧純化裝置 ‧‧‧‧purification unit

圖1係本發明之實施形態之氬氣之純化裝置之構成說明圖。 Fig. 1 is an explanatory view showing the configuration of an apparatus for purifying an argon gas according to an embodiment of the present invention.

圖2係本發明之實施形態之氬氣之純化裝置中之PSA單元之構成說明圖。 Fig. 2 is a block diagram showing the configuration of a PSA unit in an apparatus for purifying argon gas according to an embodiment of the present invention.

圖3係本發明之實施形態之氬氣之純化裝置中之TSA單元之構成說明圖。 Fig. 3 is a block diagram showing the configuration of a TSA unit in an apparatus for purifying argon gas according to an embodiment of the present invention.

1‧‧‧氬氣供給源 1‧‧‧ argon supply source

2‧‧‧過濾器 2‧‧‧Filter

3‧‧‧活性碳吸附塔 3‧‧‧Active carbon adsorption tower

4‧‧‧加熱器 4‧‧‧heater

5‧‧‧反應裝置 5‧‧‧Reaction device

5a‧‧‧第1反應器 5a‧‧‧1st reactor

5b‧‧‧第2反應器 5b‧‧‧2nd reactor

6‧‧‧脫水裝置 6‧‧‧Dehydration device

6a、6b、6c‧‧‧切換閥 6a, 6b, 6c‧‧‧ switching valve

7‧‧‧吸附裝置 7‧‧‧Adsorption device

8‧‧‧氧供給器 8‧‧‧Oxygen feeder

9‧‧‧一氧化碳供給器 9‧‧‧ Carbon monoxide feeder

10‧‧‧PSA單元 10‧‧‧PSA unit

20‧‧‧TSA單元 20‧‧‧TSA unit

C‧‧‧冷卻器 C‧‧‧cooler

T‧‧‧製品儲罐 T‧‧‧ product storage tank

α‧‧‧純化裝置 ‧‧‧‧purification unit

Claims (6)

一種氬氣之純化方法,其係對至少含有氧、氫、一氧化碳、烴、油分及氮作為雜質之氬氣進行純化之方法,該方法係使上述氬氣中之烴之一部分與油分吸附於活性碳;繼而,判定上述氬氣中之氧量是否超過與上述氬氣中之氫、一氧化碳、及烴全部進行反應所需之設定量;於上述氬氣中之氧量為上述設定量以下之情形時,以超過上述設定量之方式添加氧;繼而,使用銠作為第1反應用觸媒而使上述氬氣中之一氧化碳、氫、及烴與氧進行反應,藉此於殘留有氧之狀態下生成二氧化碳與水;繼而,以上述氬氣中之一氧化碳量超過與上述殘留之全部氧進行反應所需之設定量之方式添加一氧化碳;繼而,使用釕、銠、或該等之混合物作為第2反應用觸媒而使上述氬氣中之氧與一氧化碳進行反應,藉此於殘留有一氧化碳之狀態下生成二氧化碳;繼而,藉由變壓吸附法使上述氬氣中之至少一氧化碳、二氧化碳、水、及氮吸附於吸附劑;於使用上述第1反應用觸媒之反應與使用上述第2反應用觸媒之反應之間,藉由使用脫水裝置之脫水處理降低上述氬氣中之含水率。 A method for purifying argon gas, which is a method for purifying argon gas containing at least oxygen, hydrogen, carbon monoxide, hydrocarbons, oil and nitrogen as impurities, which is to adsorb a part of a hydrocarbon in the argon gas and an oil component to an activity Carbon; then determining whether the amount of oxygen in the argon gas exceeds a set amount required to react with all of the hydrogen, carbon monoxide, and hydrocarbons in the argon gas; and the amount of oxygen in the argon gas is less than the above-mentioned set amount When oxygen is added in excess of the above-mentioned amount, the ruthenium is used as the first reaction catalyst, and one of the argon gases, carbon monoxide, hydrogen, and hydrocarbons are reacted with oxygen, whereby the oxygen remains. Producing carbon dioxide and water; then, adding carbon monoxide in such a manner that one of the argon gases exceeds the amount required to react with all of the residual oxygen; and then using ruthenium, osmium, or a mixture thereof as the second reaction The oxygen in the argon gas is reacted with carbon monoxide by a catalyst, thereby generating carbon dioxide in a state in which carbon monoxide remains; and then, by pressure swinging The method of adsorbing at least carbon monoxide, carbon dioxide, water, and nitrogen in the argon gas to the adsorbent; and using dehydration between the reaction using the first reaction catalyst and the reaction using the second reaction catalyst The dehydration treatment of the apparatus reduces the moisture content in the above argon gas. 如請求項1之氬氣之純化方法,其中作為用於上述變壓吸附法之上述吸附劑,係使用活性氧化鋁與X型沸石。 The method for purifying argon gas according to claim 1, wherein the activated alumina and the X-type zeolite are used as the above-mentioned adsorbent for the pressure swing adsorption method. 如請求項2之氬氣之純化方法,其中將上述活性氧化鋁與上述X型沸石設為層狀而配置,且將上述活性氧化鋁與上述X型沸石之重量比設為5/95~30/70。 The method for purifying argon gas according to claim 2, wherein the activated alumina and the X-type zeolite are disposed in a layer form, and the weight ratio of the activated alumina to the X-type zeolite is set to 5/95 to 30 /70. 如請求項1至3中任一項之氬氣之純化方法,其中於利用上述變壓吸附法之吸附後,藉由-10℃~-50℃下之變溫吸附法使上述氬氣中之氮吸附於吸附劑。 The method for purifying argon gas according to any one of claims 1 to 3, wherein after the adsorption by the pressure swing adsorption method, the nitrogen in the argon gas is obtained by a temperature swing adsorption method at -10 ° C to -50 ° C Adsorbed to the adsorbent. 一種氬氣之純化裝置,其特徵在於:其係對至少含有氧、氫、一氧化碳、烴、油分及氮作為雜質之氬氣進行純化之裝置,且包含:活性碳吸附塔,於其中導入上述氬氣;第1反應器,於其中導入自上述活性碳吸附塔流出之氬氣;氧供給器,其可向導入至上述第1反應器內之氬氣中添加氧;第2反應器,於其中導入自上述第1反應器流出之氬氣;一氧化碳供給器,其可向導入至上述第2反應器內之氬氣中添加一氧化碳;及吸附裝置,於其中導入自上述第2反應器流出之氬氣;於上述活性碳吸附塔中收容有吸附上述氬氣中之烴之一部分與油分之活性碳;於上述第1反應器中收容有銠作為使上述氬氣中之一氧化碳、氫、及烴與氧進行反應之第1反應用觸媒; 於上述第2反應器中收容有釕、銠、或該等之混合物作為使上述氬氣中之氧與一氧化碳進行反應之第2反應用觸媒;上述吸附裝置包含PSA單元,該PSA單元係藉由變壓吸附法吸附上述氬氣中之至少一氧化碳、二氧化碳、水、及氮;於上述第1反應器與上述第2反應器之間,設置有降低自上述第1反應器流出之氬氣中之含水率的脫水裝置。 An apparatus for purifying argon gas, which is characterized in that it is a device for purifying argon gas containing at least oxygen, hydrogen, carbon monoxide, hydrocarbons, oil and nitrogen as impurities, and comprises: an activated carbon adsorption tower, into which the argon is introduced a first reactor in which argon gas discharged from the activated carbon adsorption column is introduced; an oxygen supplier that adds oxygen to the argon gas introduced into the first reactor; and a second reactor in which Introducing argon gas flowing out from the first reactor; a carbon monoxide supply unit for adding carbon monoxide to argon gas introduced into the second reactor; and an adsorption device for introducing argon flowing out from the second reactor a gas in which the activated carbon adsorbing a part of the hydrocarbon in the argon gas and the oil are contained in the activated carbon adsorption tower; and the first reactor contains the ruthenium as one of the argon gas, carbon, hydrogen, and hydrocarbon a catalyst for the first reaction in which oxygen is reacted; The second reactor contains a mixture of ruthenium, osmium, or the like as a second reaction catalyst for reacting oxygen in the argon gas with carbon monoxide; the adsorption device includes a PSA unit, and the PSA unit is At least carbon monoxide, carbon dioxide, water, and nitrogen in the argon gas are adsorbed by a pressure swing adsorption method; and between the first reactor and the second reactor, an argon gas which is discharged from the first reactor is provided. The water content dewatering device. 如請求項5之氬氣之純化裝置,其中上述吸附裝置包含TSA單元,該TSA單元係藉由-10℃~-50℃下之變溫吸附法吸附自上述PSA單元流出之上述氬氣中之氮。 The argon purifying apparatus of claim 5, wherein the adsorption device comprises a TSA unit, wherein the TSA unit adsorbs nitrogen in the argon gas flowing out from the PSA unit by a temperature swing adsorption method at -10 ° C to -50 ° C .
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