TWI542742B - Chemical vapor deposition reactor for producing polysilicon - Google Patents

Description

Chemical vapor deposition reactor for producing polycrystalline germanium

The present invention relates to a chemical vapor deposition reactor for producing polycrystalline germanium having a support for supporting a crucible rod throughout the production process of polycrystalline germanium.

Polycrystalline germanium is used as a raw material for the production of semiconductor products or solar cells. Therefore, there is an increasing demand for high purity polysilicon suitable for use in the manufacture of semiconductor or solar cell materials.

The metal ruthenium is produced by melting silica or cerium oxide (SiO ₂ ) in an electric furnace and using carbon to reduce it. The resulting metal ruthenium has a purity of about 98% and includes various impurities such as iron, aluminum, calcium, chromium, manganese, boron, and copper. Metal ruthenium is not suitable for use as a raw material for semiconductors or solar cells due to impurities.

Therefore, the metal ruthenium is reacted with a reactive gas such as hydrogen chloride to be vaporized to become, for example, trichloromethane or the like, and then the trichloromethane is refined by a distillation method so that the impurities can be removed. Next, using a chemical vapor deposition reactor, a procedure for depositing ruthenium from trichloromethane to remove impurities is carried out.

For example, a chemical vapor deposition reactor includes a graphite electrode chuck disposed within the outer casing to secure the filaments, with a reactive gas entering the reactive gas inlet inside the outer casing. The graphite electrode chuck holds the filament and directs the electricity to induce Joule heat, which causes the filament to act as a resistor.

That is, when the reactive gas is injected in a high pressure state for a predetermined period of time, the twisted wire therein is kept at a high temperature, and the reactive gas is decomposed on the twisted wire when it is thermally decomposed. The crucible formed by the thus deposited crucible increases the outer diameter of the surface of the crucible. Corresponding to the precipitation of 矽 The load that generates the crowbar is gradually increased, so the graphite electrode chuck supporting the crowbar may be damaged when the wire is tilted. Damage to the graphite electrode chuck may cause the rod to pass. The conduction of the crowbar can cause serious economic losses.

That is to say, the crowbar may be turned on because the reactive gas is started at the start of the reaction and the diameter of the crowbar is small, and the crowbar may be turned on due to the tilting of the crowbar due to the load of the crowbar at the later stage of the reaction.

When the number of crowbars increases, the length of the reel is long, and the diameter of the crowbar is large due to the deposition of enamel, which may further increase the possibility of crowbar conduction.

The above information disclosed in the prior art section is only used to increase the understanding of the background of the invention, and thus it may be included in this country and is not prior art information well known to those of ordinary skill in the art.

The present inventors have endeavored to provide a chemical vapor deposition reactor for producing polycrystalline germanium during the entire production process for producing polycrystalline silicon, having a support for supporting a crucible rod.

In addition, the present inventors have endeavored to provide a chemical vapor deposition reactor capable of preventing the conduction of the crucible rod and supporting the polycrystalline crucible by supporting the support of the crucible bar throughout the production process of the polycrystalline crucible.

An exemplary embodiment of the present invention provides a chemical vapor deposition reactor for producing polycrystalline germanium, comprising: a reactor for injecting and discharging a reactive gas; and a plurality of electrode chucks arranged to be positioned at the bottom of the reactor, Fixing each of the crowbars produced by depositing a plurality of turns on the plurality of twisted wires; at least two of the bridges are arranged to be interconnected with two adjacent turns; and the support is arranged to connect the two bridges The side crepe is connected to the crepe on the other side of the two truss bridges.

The twisted wire includes a cylindrical portion fixed to the electrode chuck, and a truncated joint connected to the upper end of the cylindrical portion The conical portion, and the crucible bridge disposed in the frustoconical portion interconnects the two filaments via the first connection end.

One or more supports are disposed in at least one of the cylindrical portion and the frustoconical portion of the filature.

The support is fitted with a frustoconical portion of the twisted wire connected to one side of the bridge, the frustoconical portion of the twisted wire is connected to the other side of the bridge via the second connector, and the second connector is shaped to have The inclined surface has a lower diameter larger than the upper diameter to correspond to the frustoconical portion.

A plurality of filaments are disposed in the reactor in a plurality of concentric annular rings and are interconnected by a bridge and a support.

A plurality of filaments are interconnected via a bridge and a support to form a concentric annular portion, and the different annular portions are further interconnected by a connector.

A plurality of filaments are arranged in a triangle in the reactor, and the support forms a triangular plate with a second connector at one corner to join the three filaments together.

A plurality of filaments are arranged in a quadrangular shape in the reactor, and the support forms a quadrangular plate, and a corner is provided with a second connector to connect the four wires together.

A plurality of filaments are arranged in a circular shape in the reactor, and the support forms a circular plate comprising a plurality of second connectors, the second connectors being spaced apart from each other in the circumferential direction to connect all the filaments together .

A plurality of filaments are arranged in a concentric circle within the reactor, and the support forms a plurality of annular strips comprising a plurality of second connectors, the second connectors being spaced apart from one another in a concentric circumferential direction to fold all of the filaments Connected together in a ribbon concentric circle.

The support further includes a connecting portion to connect the strip concentric circles to each other.

The bridge bridge forms a third connector outside the first connector, the support forms a fourth connector corresponding to the third connector, and the third connector and the fourth connector are connected to each other via the insertion connector.

The support is made of an electrically insulating material.

The support is made of molten cerium oxide (SiO ₂ ), cerium nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₃ ), zirconia, magnesium oxide (MgO), or mullite (3 mullite). Made of any of ₂ O ₃ .2SiO ₂ ).

Another embodiment of the present invention provides a chemical vapor deposition reactor for producing polycrystalline germanium, comprising: a reactor for injecting and discharging a reactive gas; and an electrode chuck arranged at a bottom of the reactor to be fixed by a crucible a plurality of crowbars deposited on a plurality of filaments; and a support arranged to connect and support the filaments and the crowbars. The support includes: a disk in which the wire is arranged to pass through the center of the through hole to connect the wire to the bar; and a lower surface of the disk to be supported at the bottom of the reactor.

The support portion is formed by a plurality of legs. The support portion may be formed by a cylinder.

According to the embodiment of the present invention, the generated crowbar can be stably supported throughout the process of manufacturing the polycrystalline silicon by supporting the twisted wire and the pry bar with the support. That is to say, by supporting the pry bar with the support, it is possible to prevent the pry bar from being conducted throughout the process.

1‧‧‧reactor

2‧‧‧electrode chuck

3, 31, 32, 23‧ ‧ 矽 bridge

4, 24, 34, 44, 54, 64, 74, 84, 94, 104 ‧ ‧ support

5‧‧‧矽丝

6, 26, 36‧‧‧矽

7, 37‧‧‧ Connections

27‧‧‧Connecting Department

51‧‧‧Cylinder

52‧‧‧Frustum

100, 200, 300, 400, 110, 111, 112‧‧‧ chemical vapor deposition reactor

501, 502, 503‧ ‧ ring

511‧‧‧The lower part of the cylinder

512‧‧‧Upper part of the cylinder

513‧‧‧Fitting groove

514‧‧‧Chiss

641, 642, 741, 742‧‧ ‧ ring belt

941, 141‧‧

942, 142‧‧‧ support

H1‧‧‧ first connector

H2, H22, H32, H42, H52, H62‧‧‧ second connector

H3‧‧‧ third connector

H4‧‧‧fourth connector

H14, H94‧‧‧ through hole

Upper end of the P1‧‧‧ frustoconical section

The lower end of the P2‧‧矽 bridge

The middle end of the P3‧‧‧ cylinder

P4‧‧‧The lower end of the cylindrical part

1 illustrates a state in which a filament is interconnected in a chemical vapor deposition reactor in accordance with a first exemplary embodiment of the present invention.

Figure 2 is a plan view of the support member used in Figure 1.

Figure 3 is a cross-sectional view taken along line III-III of Figure 2.

4 is a view showing a state in which ruthenium is deposited on the ruthenium of FIG. 1 to produce a ruthenium rod.

Figure 5 depicts a state diagram of a filament interconnect in a chemical vapor deposition reactor for making polycrystalline germanium in accordance with a second exemplary embodiment of the present invention.

6 is a view showing a state in which a filament is interconnected in a ring shape in a chemical vapor deposition reactor for producing polycrystalline silicon according to a third exemplary embodiment of the present invention.

Figure 7 is a plan view of Figure 6.

8 is a plan view showing a state in which a filament is interconnected into an interconnected ring shape in a chemical vapor deposition reactor for producing polycrystalline silicon according to a fourth exemplary embodiment of the present invention.

Figure 9 depicts a plan view of a support connecting three filaments arranged in a triangle in a chemical vapor deposition reactor for making polycrystalline germanium in accordance with a fifth exemplary embodiment of the present invention.

Figure 10 depicts a plan view of a support connecting four filaments arranged in a quadrangular shape in a chemical vapor deposition reactor for producing polycrystalline germanium in accordance with a sixth exemplary embodiment of the present invention.

Figure 11 is a plan view showing a support connecting a plurality of turns of a circular filament in a chemical vapor deposition reactor for producing polycrystalline germanium according to a seventh exemplary embodiment of the present invention.

Figure 12 is a plan view showing a support in which a plurality of turns are arranged in a circular strip shape in a chemical vapor deposition reactor for producing polycrystalline germanium according to an eighth exemplary embodiment of the present invention.

Figure 13 illustrates a ninth exemplary embodiment of the present invention, in a chemical vapor deposition reactor for manufacturing polycrystalline germanium, a support is connected to a plurality of turns arranged in a circular strip shape and interconnected with a strip. Silk floor plan.

14 is a diagram showing a state of a filament interconnection in a chemical vapor deposition reactor for producing polycrystalline germanium according to a tenth exemplary embodiment of the present invention.

Figure 15 is a view showing a state in which a filament is supported by a support in a chemical vapor deposition reactor for producing polycrystalline silicon according to an eleventh exemplary embodiment of the present invention.

Figure 16 is a schematic illustration of the support of Figure 15.

Figure 17 is a view showing a state in which a filament is supported by a support in a chemical vapor deposition reactor for producing polycrystalline silicon according to a twelfth exemplary embodiment of the present invention.

Figure 18 is a schematic illustration of the support of Figure 17.

Fig. 19 is a graph showing the correlation between the number of twisted wires and whether or not the support is used in the rate of conduction generation.

Fig. 20 is a graph showing the correlation between the length of the twisted wire and the conduction generation rate on whether or not the support is used.

Fig. 21 is a graph showing the correlation between the final diameter of the crowbar and the conduction generation rate on whether or not the support is used.

The invention will be described more fully hereinafter with reference to the accompanying drawings, in which <RTIgt;

The described embodiments may be modified in various different ways, without departing from the spirit or scope of the invention. The drawings and the description are to be regarded as illustrative and not restrictive. Throughout the specification, like reference numerals refer to the like.

1 depicts a state diagram of a filament interconnect in a chemical vapor deposition reactor for fabricating polycrystalline germanium in accordance with a first exemplary embodiment of the present invention. Referring to FIG. 1, a chemical vapor deposition reactor (hereinafter, simply referred to as a chemical vapor deposition reactor) 100 for manufacturing a polycrystalline silicon according to a first exemplary embodiment of the present invention includes a reactor 1, an electrode chuck 2 , 矽 bridge 3, and support 4. For example, the internal pressure of the reactor 1 is maintained at 3 to 10 bar, the deposition time is set to 60 to 80 hours, and the surface temperature of the crucible 6 (refer to FIG. 4) generated by deposition of crucible is set to 1000 ° C to 1200 ° C, The injected reactive gas is a decane compound (trichloromethane (TCS) (SiHCl ₃ )) and H ₂ , and cooling water and electric power are supplied to the reactor 1 and the electrode chuck 2. A reactive gas for depositing ruthenium is injected and discharged through the reactor 1. A plurality of electrode chucks 2 are arranged at the bottom of the reactor 1, and may be formed, for example, by a graphite electrode chuck to fix a plurality of filaments and supply electric power to a plurality of crucibles to cause Joule heat generation of the filaments 5. For example, the wire 5 has a diameter of 7 mm to 10 mm and a length of 2500 mm to 3000 mm. The pry bar 6 (refer to FIG. 4) generated by depositing ruthenium on the ruthenium 5 may have a diameter of 120 mm to 150 mm.

The electrode chuck 2 fixes and supports the filament 5 before the ruthenium deposition reaction, and supports the ruthenium rod 6 produced on the ruthenium 5 via the ruthenium from the reactive gas after the ruthenium deposition reaction is started.

The bridge 3 interconnects two adjacent turns 5 and is arranged in pairs to interconnect each of the at least four turns 5, respectively. The support 4 will be a bridge on one side of the two bridges 31 (left side of Figure 1) The twisted wire 5 of 31 is connected to the twisted wire 5 of one of the bridges 31 on the other side of the two bridges 31 (on the right side of Fig. 1).

For example, the twisted wire 5 includes a cylindrical portion 51 fixed to the electrode chuck 2, having a diameter of 7 mm to 10 mm, and a frustoconical portion 52 connected to the upper end of the cylindrical portion 51 in an inclined manner.

The bridge 3 arranges the first connector H1 at the frustoconical portion 52 to interconnect the two wires 5. The first connector H1 is formed to have an inclined surface whose lower diameter is larger than the upper diameter so as to correspond to the frustoconical portion 52, so that the bridge can be stably fitted to the frustoconical portion 52 according to its own weight.

The support 4 may be one or more, corresponding to at least one of the cylindrical portion 51 and the frustoconical portion 52 of the twisted wire 5. As shown in Fig. 1, the support member 4 is disposed on the frustoconical portion 52 of the bridge 3. Further, as shown by the imaginary line of FIG. 1, the support 4 may be disposed at the upper end P1 of the frustoconical portion 52, the lower end P2 of the stern bridge 3, and the intermediate end P3 of the cylindrical portion 51 or the lower end P4.

2 is a plan view of the support member used in FIG. 1, and FIG. 3 is a cross-sectional view taken along line III-III of FIG. 2. Referring to Figures 2 and 3, the support 4 is connected to the frustoconical portion 52 of the twisted wire 52 connected to the side of the bridge 31, and to the other side of the bridge 3 by a pair of second connectors H2. The frustoconical portion 52 of the dowel 5 is fitted.

The second connector H2 is formed with an inclined surface whose diameter is larger than the diameter of the upper portion to correspond to the frustoconical portion 52, and therefore, the support member can be stably embedded with the frustoconical portion 52 due to its own weight. Hehe.

The support member 4 is located on the bridge 3 and thus is located at the frustoconical portion 52 together with the bridge 3 such that the inclined faces of the first connector H1 and the H2 of the second connector are formed to correspond to the frustoconical portion The inclined surface of 52.

The support member 4 is made of an electrically insulating material, for example, molten cerium oxide (SiO ₂ ), cerium nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₃ ), zirconia, magnesium oxide (MgO), Or mullite (mullite, 3Al ₂ O ₃ .2SiO ₂ ).

That is, the support member 4 has excellent electrical insulating properties without affecting the purity of the polycrystalline silicon produced, and even at a temperature of, for example, 1000 ° C or higher, it has high temperature stability. this In addition, the support member 4 is applied to the bridge 3 in an applied manner, so that it is inexpensive and easy to process.

4 depicts a state in which ruthenium is deposited on the crepe of FIG. 1 to produce a sputum rod. Referring to Figure 4, the four turns 5 are interconnected by two bridges 3 (31 and 32), and adjacent turns 5 are interconnected by each of the bridges 31 and 32, each of which is 31 and 32. It is then interconnected by a support member 4. In this state, when the reactive gas is injected and discharged through the reactor 1 to deposit ruthenium on the ruthenium 5, the ruthenium rod 6 is produced.

Thus, the bridge 3 and the support 4 support the wire 5 and the crowbar 6, and therefore, the crowbar 6 can be stably supported throughout the process of manufacturing the polysilicon. That is, it can prevent the pry bar 6 from being conducted throughout the process.

Hereinafter, various exemplary embodiments of the invention will be described. The first exemplary embodiment is compared with the following exemplary embodiments, the description of the same elements is omitted, and the different elements are explained.

Figure 5 depicts a state diagram of a filament interconnect in a chemical vapor deposition reactor for making polycrystalline germanium in accordance with a second exemplary embodiment of the present invention. Referring to FIG. 5, a chemical vapor deposition reactor 200 according to a second exemplary embodiment of the present invention has a structure in which a cylinder of a chemical vapor deposition reactor 100 according to a first exemplary embodiment of the present invention is separated. Part 51.

Further, according to the first exemplary embodiment of the present invention, the support member 4 is located at the frustoconical portion 52 of the twisted wire 5, and according to the second exemplary embodiment of the present invention, the support member 24 is positioned at the circle of the twisted wire 25. The barrel portion 251.

For example, according to the second exemplary embodiment of the present invention, in the twisted wire 25, the cylindrical portion 251 has a lower portion 511 and an upper portion 512 which are separated from each other, thereby forming a structure in which they are fitted to each other. That is, the lower portion 511 is provided with the fitting groove 513, and the upper portion 512 is provided with the fitting protrusion 514 located in the fitting groove 513.

The support member 24 and the cylindrical portion 251 are fitted via the second connector H22. That is, the fitting protrusion 514 of the upper portion 512 is fitted to the fitting groove 513 via the second connector H22. At this In this case, the support member 24 is located at the lower portion 511 of the cylindrical portion 251 and is fitted to the fitting protrusion 514 passing through the second connector H22 while being pressed against the upper portion 512 of the cylindrical portion 251.

According to the second exemplary embodiment of the present invention, the support member 24 is located at the center of the cylindrical portion 251, which corresponds to the structure described in the first exemplary embodiment of Fig. 1 of the present invention, and the support member 4 is located at the cylindrical portion. The middle part P3 of 51.

6 is a plan view showing a state in which a filament is interconnected in a ring shape in a chemical vapor deposition reactor for producing polycrystalline germanium according to a third exemplary embodiment of the present invention, and FIG. 7 is a plan view of FIG. Referring to FIGS. 6 and 7, in the chemical vapor deposition reactor 300 according to the third exemplary embodiment of the present invention, a plurality of electrode chucks 2 are arranged in a plurality of concentric rings in the reactor 1.

Therefore, the plurality of twist wires 5 are fixed to the electrode chuck 2, and thus are located in a plurality of concentric rings in the reactor 1. The bridge 3 and the support 4 are interconnected with the filament 5 in the shape of a concentric ring.

That is, the bridge 3 is interconnected with two adjacent turns 5 of the twisted wire 5 arranged in the annular frustoconical portion 52. The support 4 on the bridge 3 is interconnected with a frustoconical portion 52 of the twisted wire 5 connected by a different bridge 3.

That is, the twisted wire 5 is interconnected by the bridge 3 and the support 4 into a ring shape, and has multiple supporting forces. The filaments 5 positioned in a plurality of rings can be connected in each of the rings with the force of multiple supports. Therefore, the filature 5 and the ram 6 (refer to FIG. 4) can stably obtain support throughout the process of manufacturing the polysilicon. That is, it can prevent the pry bar 6 from being conducted throughout the process.

8 is a plan view showing a state in which a filament is interconnected into an interconnected ring shape in a chemical vapor deposition reactor for producing polycrystalline silicon according to a fourth exemplary embodiment of the present invention. Referring to FIG. 8, a chemical vapor deposition reactor 400 according to a fourth exemplary embodiment of the present invention, in addition to the elements in the chemical vapor deposition reactor 300 according to the third exemplary embodiment of the present invention, further includes A connector 7.

The plurality of twist wires 5 are interconnected by the bridge 3 and the support 4 to form concentric annular portions 501, 502 and 503. The connector 7 further connects the different annular portions 501, 502 and 503.

That is, the dam bridges 3 at the frustoconical portion 52 are interconnected by each of the annular portions 501, Two adjacent twisted wires 5 of the twisted wires 5 arranged by 502 and 503. The support members 4 on the bridge 3 interconnect the frustoconical portions 52 of the strands 5 via different jaw bridges 3. The frustoconical portion 52 to which the connecting member 7 is attached is a frustoconical portion 52 having different annular portions 501, 502 and 503, and is also connected to the bridge 3 or the support member 4.

That is, the twisted wire 5 has a force of mutual support since the annular portions 501, 502, and 503 are connected by the bridge 3 and the support member 4. Further, each of the annular portions 501, 502, and 503 may have a mutual supporting force due to the connecting member 7. Therefore, it is possible to effectively prevent the filament 5 and the crucible 6 (refer to FIG. 4) from being conducted throughout the process of manufacturing the polysilicon.

9 is a plan view showing three support wires arranged in a triangle in a chemical vapor deposition reactor for manufacturing polycrystalline germanium according to a fifth exemplary embodiment of the present invention. Referring to FIG. 9, in a chemical vapor deposition reactor according to a fourth exemplary embodiment of the present invention, a plurality of electrode chucks (not shown) are located in a triangle located inside the reactor.

The plurality of strands 5 are in a triangle located in the reactor while the supports 34 form a triangular plate to connect all three strands 5.

Each corner of the support 34 of the triangular plate is provided with a second connector H32. Therefore, the support 34 fits the frustoconical portion 52 of the three twisted wires 5 located in the triangle with the second connector H32 to connect the three twisted wires 5. Therefore, it is possible to effectively prevent the filament 5 and the crucible 6 (refer to FIG. 4) from being conducted throughout the process of manufacturing the polysilicon.

Figure 10 is a plan view showing four crucibles in which a support is connected in a square shape in a chemical vapor deposition reactor for producing polycrystalline germanium according to a sixth exemplary embodiment of the present invention. Referring to FIG. 10, in a chemical vapor deposition reactor according to a sixth exemplary embodiment of the present invention, a plurality of electrode chucks (not shown) are located in a square shape located inside the reactor.

A plurality of strands 5 are in a square shape located inside the reactor, while the support 44 forms a quadrangular plate to connect all of the four strands 5.

Each corner of the support 44 of the quadrangular plate is provided with a second connector H42. Therefore, the support 44 will be located in the truncated conical portion 52 of the four turns 5 in the quadrilateral and the second connector H42 Fit to join the four strands 5. Therefore, it is possible to effectively prevent the filament 5 and the crucible 6 (refer to FIG. 4) from being conducted throughout the process of manufacturing the polysilicon.

Figure 11 is a plan view showing a plurality of turns of a support in a circle in a chemical vapor deposition reactor for producing polycrystalline silicon according to a seventh exemplary embodiment of the present invention. Referring to Fig. 11, in a chemical vapor deposition reactor according to a seventh exemplary embodiment of the present invention, a plurality of electrode chucks (not shown) are positioned in a circle located inside the reactor.

The plurality of strands 5 are in a circle located inside the reactor while the support 54 forms a circular plate to connect all of the plurality of strands 5.

The support 54 includes a plurality of second connectors H52 spaced apart from each other in the circumferential direction of the circular plate. Therefore, the support 54 fits the frustoconical portion 52 of the plurality of twisted wires 5 located in a circle with the second connector H52 to connect the plurality of twisted wires 5.

Figure 12 is a plan view showing a plurality of twisted wires in which a support is joined in an endless belt in a chemical vapor deposition reactor for producing polycrystalline silicon according to an eighth exemplary embodiment of the present invention. Referring to FIG. 12, in a chemical vapor deposition reactor according to an eighth exemplary embodiment of the present invention, a plurality of electrode chucks (not shown) are located in concentric circles located inside the reactor.

A plurality of filaments 5 are located in concentric circles in the reactor, while the support 64 forms a plurality of concentric annular strips 641 and 642 to join a plurality of filaments 5 in a concentric band shape.

The support 64 includes a plurality of second connectors H62 spaced apart from each other in the circumferential direction of the endless belts 641 and 642. Therefore, the support 54 fits the frustoconical portion 52 of the plurality of twisted wires 5 positioned in the circle corresponding to the endless belts 641 and 642 with the second connector H62 to connect the plurality of twisted wires 5.

That is, the dam bridge (not shown) at the frustoconical portion 52 connects the two adjacent filatures 5 in the annular filature 5 to each other. The support 64 on the bridge 3 interconnects the frustoconical portions 52 of the turns 5 connected by different bridges 3.

That is, the twisted wire 5 is interconnected via the endless belts 641 and 642 using a bridge (not shown) and a support 64, and has mutually supporting forces. The filaments 5 arranged to correspond to a plurality of circular bands may be connected to each other via each of the endless belts 641 and 642 to have mutually supporting forces. therefore, The filature 5 and the ram 6 (refer to FIG. 4) can stably obtain support throughout the process of manufacturing the polysilicon. That is to say, it is possible to prevent the pry bar 6 from being conducted throughout the process.

Figure 13 is a plan view showing a plurality of turns of a support in an interconnected endless belt in a chemical vapor deposition reactor for producing polycrystalline germanium in accordance with a ninth exemplary embodiment of the present invention. Referring to Fig. 13, a chemical vapor deposition reactor according to a ninth exemplary embodiment of the present invention includes a connecting portion 27 in addition to the elements in the chemical vapor deposition reactor according to the eighth exemplary embodiment of the present invention.

A plurality of twist wires 5 are interconnected by a bridge (not shown) and a support 74 to form concentric annular strips 741 and 742. The connecting portion 27 is also connected to different endless belts 741 and 742.

That is, the dam bridge (not shown) at the frustoconical portion 52 connects the two adjacent filatures 5 of the filature 5 to each other via the respective endless belts 741 and 742. The supports 74 on the bridge 3 interconnect the frustoconical portions 52 of the connected strands 5 via different jaw bridges 3. The connecting portion 27 interconnects the endless belts 741 and 742 of the support 74.

That is, the twisted wire 5 has mutually supporting forces via the endless belts 741 and 742 interconnected by a bridge (not shown) and a support 74. Furthermore, each of the endless belts 741 and 742 is in turn connected to each other via the connecting portion 27 with a force of mutual support. Therefore, it is possible to prevent the filament 5 and the crucible 6 (refer to Fig. 4) from being conducted throughout the process of manufacturing the polysilicon.

Figure 14 is a diagram showing a state of interconnection of a plurality of filaments in a chemical vapor deposition reactor for producing polycrystalline germanium according to a tenth exemplary embodiment of the present invention. Referring to FIG. 14, in the chemical vapor deposition reactor 110 according to the tenth exemplary embodiment of the present invention, the bridge 23 also forms a third connector H3 outside the first connector H1, and the support 84 is formed. A fourth connector H4 corresponding to the third connector H3 is provided. The third connector H3 and the fourth connector H4 are connected to each other via the inserted connector 37.

For example, the intermediate portion of the connector 37 has the largest diameter and has a diameter that decreases toward both ends, thereby forming a H3 fitting with the third connector of the bridge 23, and a fourth connector corresponding to the support 84. H4.

The bridge 23 is in the frustoconical portion 52 and is interconnected by the first connector H1 and the two turns 5 . The connector 37 is placed in the H3 of the second connector of the bridge 23 such that the support 84 is fitted into the fourth connector H4 to connect the two adjacent turns 5 to each other.

That is, the frustoconical portions 52 of two adjacent twisted wires 5 are interconnected via a truss bridge 23, and two adjacent truss bridges 23 are interconnected by a support 84 that is placed by the connector 37. Therefore, it is possible to effectively prevent the filament 5 and the crucible 6 (refer to FIG. 4) from being conducted throughout the process of manufacturing the polysilicon.

Figure 15 is a view showing a state in which a filament is supported by a support member in a chemical vapor deposition reactor for producing polycrystalline silicon according to a tenth exemplary embodiment of the present invention. Figure 16 is a schematic illustration of the support of Figure 15. Referring to FIGS. 15 and 16, in the chemical vapor deposition reactor 111 according to the eleventh exemplary embodiment of the present invention, the support member 94 includes a disk 941 and a support portion 942.

The disk 941 is connected and supports the tamper bar 26 produced by the through hole H94 of the filature 5 passing through the center thereof. The support portion 942 is attached to the lower surface of the disk 941 and is positioned at the bottom of the reactor to support the disk 941. For example, the support portion 942 may be formed by a plurality of legs.

The crowbars 26 formed by depositing the crucibles on the filaments 5 are formed on the upper and lower surfaces of the disc 941, respectively. Therefore, the support member 94 can support the twisted wire 5 and the pry bar 26 more stably in the process of producing the polycrystalline crucible.

Figure 17 is a view showing a state in which a twisted wire is supported by a support member in a chemical vapor deposition reactor for producing polycrystalline silicon according to a twelfth exemplary embodiment of the present invention. Figure 18 is a schematic illustration of the support of Figure 17. Referring to FIGS. 17 and 18, in the chemical vapor deposition reactor 112 according to the twelfth exemplary embodiment of the present invention, the support member 104 includes a disk 141 and a support portion 142.

The disk 141 is connected and supports the tamper bar 36 produced by the through hole H14 of the filature 5 passing through the center thereof. The support portion 142 is attached to the lower surface of the disk 141 and is positioned at the bottom of the reactor to support the disk 141. For example, the support portion 142 may be formed of a cylinder.

A pry bar 36 formed by depositing enamel on the filature 5 is formed on the upper surface of the disk 941. Therefore, in the process of producing the polycrystalline crucible, the crucible 36 is partially produced in the crucible 5, and the support member 94 can support the crucible 5 and the crucible 26 more stably.

Hereinafter, when the exemplary embodiment of the present invention is applied, the conduction generation rate of the crucible rod 6 generated by depositing the crucible on the filament 5 will be described. For convenience, the first exemplary embodiment of the present invention will serve as a reference for the description.

Fig. 19 is a graph showing the correlation between the number of twisted wires and whether or not the support member is used in the conduction generation rate.

Referring to Fig. 19, as the number of the crowbars 6 is increased, the conduction generation rate of the crowbars 6 is also increased.

In the state in which the number of the crowbars 6 is the same, in the case of using the support, the conduction generation rate of the crowbar 6 is lower than the case where the support 4 is not used. That is, it can be understood that the support member 4 reduces the conduction generation rate of the crowbar 6.

Fig. 20 is a graph showing the correlation between the length of the twisted wire and the conduction generation rate on whether or not the support is used. Referring to Fig. 20, as the length of the wire 5 is increased, the conduction rate of the crowbar 6 is also increased.

In the state where the lengths of the twisted wires 5 are the same, the conduction generation rate of the crowbars 6 using the support 4 is lower than the case where the support 4 is not used. That is, it can be understood that the support member 4 reduces the conduction generation rate of the crowbar 6.

Fig. 21 is a graph showing the correlation between the final diameter of the crowbar and the conduction generation rate on whether or not the support is used. Referring to Fig. 21, when the final diameter of the crowbar 6 is increased, the conduction generation rate of the crowbar 6 is increased.

In the state where the final diameter of the twisted wire 5 is the same, the conduction generation rate of the crowbar 6 using the support 4 is lower than the case where the support 4 is not used. That is, it can be understood that the support member 4 reduces the conduction generation rate of the crowbar 6.

Although the present invention has been described in connection with what is presently considered as an exemplary embodiment, it is understood that the invention is not limited to the disclosed embodiments Various modifications and equivalent arrangements.

The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should be within the scope of the present invention.

1‧‧‧reactor

2‧‧‧electrode chuck

3, 31, 32‧ ‧ 矽 bridge

4‧‧‧Support

5‧‧‧矽丝

51‧‧‧Cylinder

52‧‧‧Frustum

100‧‧‧Chemical vapor deposition reactor

H1‧‧‧ first connector

Upper end of the P1‧‧‧ frustoconical section

The lower end of the P2‧‧矽 bridge

The middle end of the P3‧‧‧ cylinder

P4‧‧‧The lower end of the cylindrical part

Claims (17)

A chemical vapor deposition reactor for producing polycrystalline germanium, comprising: a reactor for injecting and discharging a reactive gas; a plurality of electrode chucks arranged in the bottom of the reactor to be fixed by a plurality of depositions in the reactor Each of the crowbars formed on the silk; at least two ankle bridges arranged to interconnect with two adjacent filaments; and a support arranged to connect the filaments on one side of the two bridges to two The silk on the other side of the bridge. A chemical vapor deposition reactor for producing a polycrystalline silicon according to claim 1, wherein the filament comprises a cylindrical portion fixed to the electrode chuck, and a frustoconical portion connected to an upper end of the cylindrical portion, and the crucible bridge is passed through a A first connection end is disposed in the frustoconical portion to interconnect the two wires. A chemical vapor deposition reactor for producing polycrystalline silicon according to claim 2, wherein one or more of the supports are disposed in at least one of the cylindrical portion and the frustoconical portion of the filament. A chemical vapor deposition reactor for producing a polycrystalline silicon according to claim 2, wherein the support is fitted to the frustoconical portion of the filament connected to one side of the crucible, and the truncated cone portion of the filament is passed through a first The second connector is coupled to the other side of the bridge, and the second connector is shaped to have an inclined surface having a lower diameter larger than the upper diameter so as to correspond to the frustoconical portion. A chemical vapor deposition reactor for producing polycrystalline silicon according to claim 1, wherein the plurality of filaments are disposed in a plurality of concentric rings in the reactor, and are connected to each other by a bridge and a support. A chemical vapor deposition reactor for producing polycrystalline silicon according to claim 1, wherein the plurality of filaments are interconnected via the crucible bridge and the support member to form a part of a concentric annular shape, and the different annular portions are composed of one The connectors are further connected to each other. A chemical vapor deposition reactor for producing polycrystalline silicon according to claim 1, wherein the plurality of filaments are arranged in a triangle shape in the reactor, and the support forms a triangular plate, and a corner of the support provides a second connector to three The silk is connected together. A chemical vapor deposition reactor for producing polycrystalline silicon according to claim 1, wherein the plurality of filaments are arranged in a quadrangular shape in the reactor, and the support forms a quadrangular plate, and a corner of the support provides a second connector to serve four The filaments are connected together. A chemical vapor deposition reactor for producing polycrystalline silicon according to claim 1, wherein the plurality of filaments are arranged in a circular shape in the reactor, and the support forms a circular plate including a plurality of second connectors, The second connectors are spaced apart from each other in the circumferential direction to connect all of the turns together. A chemical vapor deposition reactor for producing polycrystalline silicon according to claim 1, wherein the plurality of filaments are arranged in a concentric annular shape in the reactor, and the support forms a plurality of annular belts including a plurality of second connectors, The second connectors are spaced apart from each other in a concentric circumferential direction to connect all of the turns together in a concentric annular band. A chemical vapor deposition reactor for producing polycrystalline silicon according to claim 1, wherein the support further comprises a connecting portion to connect the concentric annular belts to each other. A chemical vapor deposition reactor for manufacturing a polycrystalline silicon according to claim 1, wherein the dam bridge forms a third connector outside the first connector, the support forming a fourth connector corresponding to the third connector, The third connector and the fourth connector are connected to each other via an inserted connector. A chemical vapor deposition reactor for producing polycrystalline silicon according to claim 1, wherein the support is electrically insulated Made of edge material. A chemical vapor deposition reactor for producing polycrystalline germanium according to claim 1, wherein the support is composed of molten cerium oxide (SiO ₂ ), cerium nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₃ ), zirconia Made of any one of magnesium oxide (MgO) or mullite (3Al ₂ O ₃ .2SiO ₂ ). A chemical vapor deposition reactor for producing polycrystalline germanium, comprising: a reactor for injecting and discharging a reactive gas; a plurality of electrode chucks arranged in the bottom of the reactor to be fixed by the deposition of tantalum in the plural a plurality of pry bars on the twisted wire; and a support arranged to connect and support the dove and the pry bar, the support comprising: a plate arranged to pass the wire through a through hole in the center thereof The filament is attached to the crucible; and a support is attached to the lower surface of the tray to be positioned at the bottom of the reactor. A chemical vapor deposition reactor for producing a polycrystalline silicon according to claim 15 wherein the support portion is formed of a plurality of legs. A chemical vapor deposition reactor for producing polycrystalline silicon according to claim 15 wherein the support portion is formed of a cylinder.