KR20150035093A - Chemical vapor deposition reactor for producing polysilicon - Google Patents

Chemical vapor deposition reactor for producing polysilicon Download PDF

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Publication number
KR20150035093A
KR20150035093A KR20130115258A KR20130115258A KR20150035093A KR 20150035093 A KR20150035093 A KR 20150035093A KR 20130115258 A KR20130115258 A KR 20130115258A KR 20130115258 A KR20130115258 A KR 20130115258A KR 20150035093 A KR20150035093 A KR 20150035093A
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South Korea
Prior art keywords
silicon
filaments
reactor
supporter
vapor deposition
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KR20130115258A
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Korean (ko)
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KR101654148B1 (en
Inventor
이희동
박규학
박성은
박제성
Original Assignee
한화케미칼 주식회사
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Priority to KR1020130115258A priority Critical patent/KR101654148B1/en
Priority to PCT/KR2014/009023 priority patent/WO2015046948A1/en
Priority to TW103133807A priority patent/TWI542742B/en
Publication of KR20150035093A publication Critical patent/KR20150035093A/en
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Publication of KR101654148B1 publication Critical patent/KR101654148B1/en

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4418—Methods for making free-standing articles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

It is an object of the present invention to provide a chemical vapor deposition reactor for polysilicon production that supports a silicon rod with a supporter to prevent conduction of the silicon rod throughout the process. A chemical vapor deposition reactor for producing polysilicon according to an embodiment of the present invention includes a reactor for introducing and discharging a reaction gas, a plurality of silicon rods disposed on the bottom of the reactor and made of silicon and deposited on a plurality of silicon filaments, A supporter for connecting the silicon filaments of the one side silicon bridge and the silicon filaments of the other side silicon bridge among the two silicon bridges and the two silicon bridges connecting the two neighboring silicon filaments to each other, .

Description

TECHNICAL FIELD [0001] The present invention relates to a chemical vapor deposition reactor for producing polysilicon,

The present invention relates to a chemical vapor deposition reactor for producing polysilicon having a supporter for supporting a silicon rod produced throughout the process of producing polysilicon.

Polysilicon is used as a raw material in the manufacture of semiconductors or solar cells. Therefore, there is an increasing demand for high-purity polysilicon suitable as a raw material for semiconductors or solar cells.

Metal silicon is produced by melting silica sand or silica (SiO 2 ) in an electric furnace and reducing it with carbon. The metal silicon produced has 98% purity including impurities such as Fe, Al, Ca, Cr, Mn, B and Cu. This metal silicon is not suitable for use as a raw material for semiconductors or solar cells due to impurities.

Therefore, the impurities can be removed by reacting the metal silicon with a reaction gas such as hydrogen chloride or the like, vaporizing it with trichlorosilane or the like, and purifying the trichlorosilane through a distillation process. Thereafter, the silicon is subjected to a process of precipitating silicon from the trichlorosilane from which impurities have been removed by using a chemical vapor deposition reactor.

For example, the chemical vapor deposition reactor includes a graphite chuck installed inside the shell for fixing a silicon filament, and a reaction gas inlet for injecting a reaction gas into the shell. The graphite electrode chuck fixes the silicon filament and energizes the electricity, causing the resistance heating that acts the silicon filament as a resistor.

That is, when the reaction gas is supplied for a set time under a high-pressure condition in which the silicon filament is kept at a high temperature, the reaction gas is pyrolyzed and silicon is precipitated in the silicon filament. This precipitated silicon creates a silicon rod while increasing the outer diameter at the surface of the silicon filament.

When the silicon filament is inclined, the graphite electrode chuck supporting the silicon rod may be damaged because the load of the silicon rod produced by precipitation of silicon increases. Breakage of the graphite electrode chuck can conduct the silicon rod. Conduction of the silicon rod leads to a large economic loss.

That is, the silicon rod can be conducted due to the reaction gas at the initial stage of the reaction with a small diameter of the silicon rod, and the silicon rod can be conducted due to the load of the silicon rod at the latter stage of the reaction.

The greater the number of silicon rods, the longer the length of the silicon filament, and the larger the diameter of the silicon rods deposited with silicon, the greater the likelihood of conduction of the silicon rods.

It is an object of the present invention to provide a chemical vapor deposition reactor for producing polysilicon supporting a silicon rod produced throughout a process for producing polysilicon with a supporter.

It is a further object of the present invention to provide a chemical vapor deposition reactor for polysilicon production that supports a silicon rod with a supporter to prevent conduction of the silicon rod throughout the process.

A chemical vapor deposition reactor for producing polysilicon according to an embodiment of the present invention includes a reactor for introducing and discharging a reaction gas, a plurality of silicon rods disposed on the bottom of the reactor and made of silicon and deposited on a plurality of silicon filaments, A supporter for connecting the silicon filaments of the one side silicon bridge and the silicon filaments of the other side silicon bridge among the two silicon bridges and the two silicon bridges connecting the two neighboring silicon filaments to each other, .

The silicon filament may include a cylindrical portion fixed to the electrode chuck and a conical portion connected to an upper end of the cylindrical portion. The silicon bridge may be provided as a first coupling portion on the conical portion, .

The supporter may be installed on at least one of the cylindrical portion and the conical portion of the silicon filament.

Wherein the supporter is coupled to the conical portion of the silicon filament connected to the one side silicon bridge and the conical portion of the silicon filament connected to the other side silicon bridge as a pair of second coupling ports, And may be formed as an inclined surface having a lower diameter larger than the upper diameter so as to correspond to the conical portion.

The plurality of silicon filaments are concentrically arranged in the reactor and arranged in a plurality of ring shapes, and may be connected to the silicon bridge by the supporter.

The plurality of silicon filaments may be connected to the silicon bridge by the supporter to form concentric ring portions, and the different ring portions may further be connected to the connection members.

The plurality of silicon filaments are arranged in a triangular shape in the reactor, and the supporter may be formed of a triangular plate having a second coupling hole at a corner to connect all three silicon filaments.

The plurality of silicon filaments are arranged in a quadrangular shape in the reactor, and the supporter may be formed of a rectangular plate having a second coupling hole at a corner to connect all four silicon filaments.

The plurality of silicon filaments may be arranged in a circular shape in the reactor, and the supporter may be formed of a circular plate having a plurality of second engagement holes spaced apart in the circumferential direction so as to connect all of the plurality of silicon filaments.

Wherein the plurality of silicon filaments are concentrically arranged in the reactor with a concentric circle, and the supporter comprises a plurality of second coupling members having a concentricity and spaced apart in the circumferential direction so as to concentrically connect the plurality of silicon filaments, And may be formed of a plurality of ring-shaped bands.

The supporter may further include a connection portion connecting the ring-shaped zones having concentricity to each other.

Wherein the silicon bridge forms a third coupling hole on the outer side of the first coupling hole, the supporter forms a fourth coupling hole corresponding to the third coupling hole, and the third coupling hole and the fourth coupling hole And can be connected to each other by a connecting member to be inserted.

The supporter may be formed of an electrically insulating material. The supporter is, fused silica (Fused silica, SiO 2), silicon nitride (Si 3 N 4), alumina (Al 2 O 3), zirconia (ZrO 2), magnesia (MgO), and mullite (3Al 2 O 3 · 2SiO 2 ). ≪ / RTI >

The chemical vapor deposition reactor for producing polysilicon according to an embodiment of the present invention includes a reactor for introducing and discharging a reaction gas, an electrode chuck for fixing silicon rods formed on the bottom of the reactor, And a supporter for connecting and supporting the silicon filament and the silicon rod, wherein the supporter comprises: a circular plate which penetrates the silicon filament through a central through-hole to connect the silicone filament and the silicon rod; And a supporting portion to be installed.

The support portion may be formed of a plurality of legs. The support portion may be formed as a cylinder.

As described above, according to the embodiment of the present invention, since the silicon filament and the silicon rod are supported by the supporter, there is an effect of stably supporting the silicon rod produced throughout the process of producing polysilicon. That is, since the silicon rod is supported by the supporter, there is an effect of preventing the conduction of the silicon rod throughout the process.

1 is a connection diagram of a silicon filament in a chemical vapor deposition reactor for producing polysilicon according to a first embodiment of the present invention.
2 is a plan view of the supporter used in Fig.
3 is a sectional view taken along the line III-III in Fig.
FIG. 4 is a state in which silicon is deposited on the silicon filament of FIG. 1 to generate a silicon rod.
5 is a connection diagram of a silicon filament in a chemical vapor deposition reactor for producing polysilicon according to a second embodiment of the present invention.
FIG. 6 is a view showing a state in which a silicon filament is connected in a ring shape in a chemical vapor deposition reactor for producing polysilicon according to a third embodiment of the present invention.
Fig. 7 is a plan view of Fig. 6. Fig.
FIG. 8 is a plan view of a silicon filament connected in a ring shape and connecting ring shapes to each other in a chemical vapor deposition reactor for producing polysilicon according to a fourth embodiment of the present invention.
9 is a plan view of a supporter connecting three silicon filaments arranged in a triangle in a chemical vapor deposition reactor for producing polysilicon according to a fifth embodiment of the present invention.
10 is a plan view of a supporter connecting four silicon filaments arranged in a square in a chemical vapor deposition reactor for producing polysilicon according to a sixth embodiment of the present invention.
11 is a plan view of a supporter connecting a plurality of circularly arranged silicon filaments in a chemical vapor deposition reactor for producing polysilicon according to a seventh embodiment of the present invention.
12 is a plan view of a supporter connecting a plurality of silicon filaments arranged in a circular strip shape in a strip shape in a chemical vapor deposition reactor for producing polysilicon according to an eighth embodiment of the present invention.
13 is a plan view of a supporter connecting a plurality of silicon filaments arranged in a circular band shape in a band and connecting strips to each other in a chemical vapor deposition reactor for producing polysilicon according to a ninth embodiment of the present invention.
14 is a connection state diagram of a silicon filament in a chemical vapor deposition reactor for producing polysilicon according to a tenth embodiment of the present invention.
15 is a view illustrating a state in which a silicon filament is supported by a supporter in a chemical vapor deposition reactor for producing polysilicon according to an eleventh embodiment of the present invention.
16 is a perspective view of the supporter of Fig.
17 is a state in which a silicon filament is supported by a supporter in a chemical vapor deposition reactor for producing polysilicon according to a twelfth embodiment of the present invention.
18 is a perspective view of the supporter of Fig.
19 is a graph showing the correlation between the number of silicon filaments and the conduction incidence rate depending on the presence or absence of a supporter.
20 is a graph showing a correlation between the length of the silicon filament and the conduction incidence rate depending on whether or not the supporter is used.
21 is a graph showing the correlation between the final diameter of the silicon rod and the conduction incidence rate depending on whether or not the supporter is used.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art can easily carry out the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. In order to clearly illustrate the present invention, parts not related to the description are omitted, and the same or similar components are denoted by the same reference numerals throughout the specification.

1 is a connection diagram of a silicon filament in a chemical vapor deposition reactor for producing polysilicon according to a first embodiment of the present invention. Referring to FIG. 1, a chemical vapor deposition reactor (hereinafter referred to as a "chemical vapor deposition reactor") 100 for producing polysilicon according to the first embodiment includes a reactor 1, an electrode chuck 2, a silicon bridge 3 ) And a supporter (4).

For example, the internal pressure of the reactor 1 is maintained at 3 to 10 bar, the deposition time is 60 to 80 hr, the surface temperature of the silicon rod 6 (see FIG. 4) produced by deposition of silicon is 1000 to 1200 ° C. The reaction gas introduced is a silane compound (TCS (Trichlorosilane) (SiHCl 3 )) and H 2 , and the reactor 1 and the electrode chuck 2 are supplied with cooling water and electricity. Reactor 1 for silicon deposition is charged into and discharged from the reactor 1.

A plurality of electrode chucks 2 are provided on the bottom of the reactor 1 and may be formed of, for example, graphite chucks. The plurality of silicon filaments 5 are fixed and supplied with electric power , The resistance heating of the silicon filament (5) is enabled.

For example, the silicon filament 5 has a diameter of 7 to 10 mm and a length of 2500 to 3000 mm. The silicon rod 6 (see FIG. 4) produced by depositing silicon on the silicon filament 5 may have a diameter of 120 to 150 mm.

The electrode chuck 2 supports and supports the silicon filament 5 before the silicon deposition reaction and after the initiation of the silicon deposition reaction the silicon rod 6 is formed by depositing silicon on the silicon filament 5 from the reaction gas. .

The silicon bridge 3 connects two adjacent silicon filaments 5 to each other and connects two of the at least four silicon filaments 5 to each other. The supporter 4 is connected to the silicon filament 5 of the silicon bridge 31 on one side (left side in Fig. 1) of the two silicon bridges 3 and the silicon filament 5 (on the right side of the silicon bridge 32 on the other side 5) to each other.

For example, the silicon filament 5 is fixed to the electrode chuck 2 and includes a cylindrical portion 51 having a diameter of 7 to 10 mm and a conical portion 52 connected to the upper end of the cylindrical portion 51 in a tapered structure .

The silicon bridge 3 is installed on the conical portion 52 as a first coupling hole H1 to connect the two silicon filaments 5 to each other. Since the first engagement hole H1 is formed as an inclined surface having a lower diameter larger than the upper diameter to correspond to the conical portion 52, the first engagement hole H1 can be stably engaged with the conical portion 52 by its own weight.

The supporter 4 may be provided in one or a plurality of corresponding to at least one of the cylindrical portion 51 and the conical portion 52 of the silicon filament 5. In Fig. 1, the supporter 4 is installed on the conical portion 52 at the upper portion of the silicon bridge 3. 1, the supporter 4 is fixed to the upper end P1 of the conical portion 52, the lower portion P2 of the silicon bridge 3, the middle portion P3 of the cylindrical portion 51, And may be installed at the lower end P4.

Fig. 2 is a plan view of the supporter used in Fig. 1, and Fig. 3 is a sectional view taken along the line III-III in Fig. 2 and 3, the supporter 4 comprises a silicon filament 5 connected to the conical portion 52 of the silicon filament 5 connected to the one-side silicon bridge 31 and the other silicon bridge 32, And is coupled to the conical portion 52 of the second connecting hole H2 by a pair of second coupling holes H2.

The second engagement hole H2 is formed as an inclined surface having a lower diameter larger than the upper diameter so as to correspond to the conical portion 52, and can be stably engaged with the conical portion 52 by its own weight.

Since the supporter 4 is disposed on the silicon bridge 3 and installed on the conical portion 52 together with the silicon bridge 3 so that the inclined surfaces of the first engaging portion H1 and the second engaging portion H2 are engaged with the conical portion 3, (Not shown).

Supporters (4) is formed of an electrically insulating material, e.g., fused silica (Fused silica, SiO 2), silicon nitride (Si 3 N 4), alumina (Al 2 O 3), zirconia (ZrO 2), magnesia (MgO ) Or mullite (3Al 2 O 3 .2SiO 2 ).

That is, the supporter 4 has excellent electrical insulation characteristics and does not affect the purity of the produced polysilicon and has high temperature stability such as, for example, 1000 ° C or higher. Further, since the supporter 4 is additionally used for the silicon bridge 3, it is inexpensive and needs to be easily machined.

FIG. 4 is a state in which silicon is deposited on the silicon filament of FIG. 1 to generate a silicon rod. 4, four silicon filaments 5 are connected to each other by two silicon bridges 31 and 32, and silicon filaments 5 adjacent to each other connected to the respective silicon bridges 31 and 32 are connected to one Are connected to each other by supporters (4). Silicon is deposited on the silicon filament 5 while injecting and discharging the reaction gas into the reactor 1 in this state, and a silicon rod 6 is produced.

As described above, since the silicon bridge 3 and the supporter 4 support the silicon filament 5 and the silicon rod 6, the silicon rod 6 can be stably supported throughout the process of producing polysilicon. That is, the conduction of the silicon rod 6 can be prevented throughout the process.

Hereinafter, various embodiments of the present invention will be described. The description of the same configuration will be omitted in comparison with the first embodiment and the previously described embodiment, and description of different configurations will be described.

5 is a connection diagram of a silicon filament in a chemical vapor deposition reactor for producing polysilicon according to a second embodiment of the present invention. Referring to FIG. 5, the chemical vapor deposition reactor 200 according to the second embodiment is configured to separate the cylindrical portion 51 of the chemical vapor deposition reactor 100 of the first embodiment.

In the first embodiment, the supporter 4 is provided on the conical portion 52 of the silicon filament 5. In the second embodiment, the supporter 24 is provided on the cylindrical portion 251 of the silicon filament 25 do.

For example, in the second embodiment, in the silicon filament 25, the cylindrical portion 251 is divided into the lower portion 511 and the upper portion 512 to form a coupling structure with each other. That is, the lower portion 511 has a coupling groove 513 and the upper portion 512 has a coupling projection 514 in the coupling groove 513.

The supporter 24 is coupled to the cylindrical portion 251 with the second engagement hole H22. That is, the engaging projection 514 of the upper portion 512 is engaged with the engaging groove 513 via the second engaging hole H22. At this time, the supporter 24 is placed on the lower portion 511 of the cylindrical portion 251 and is coupled to the engaging projection 514 passing through the second engaging portion H22 while being pushed by the upper portion 512 of the cylindrical portion 251 do.

The second embodiment corresponds to the structure in which the supporter 24 is installed in the middle of the cylindrical portion 251 and the supporter 4 is provided in the middle P3 of the cylindrical portion 51 in Fig. 1 of the first embodiment do.

FIG. 6 is a cross-sectional view of a silicon filament in a ring shape in a chemical vapor deposition reactor for producing polysilicon according to a third embodiment of the present invention, and FIG. 7 is a plan view of FIG. Referring to FIGS. 6 and 7, the chemical vapor deposition reactor 300 according to the third embodiment arranges a plurality of electrode chucks 2 concentrically in the reactor 1 in a plurality of ring shapes.

Therefore, since the plurality of silicon filaments 5 are fixed to the electrode chucks 2, they are arranged in the form of a plurality of rings concentrically in the reactor 1. The silicon bridge (3) and the supporter (4) connect the silicon filaments (5) to each other in a concentric ring shape.

That is, the silicon bridge 3 connects two adjacent ones of the silicon filaments 5 arranged in a ring shape at the conical portion 52 with each other. The supporter 4 connects the conical portions 52 of the silicon filaments 5 connected to each other by the different silicon bridges 3 above the silicon bridges 3.

That is, the silicon filaments 5 are connected in a ring shape by the silicon bridge 3 and the supporter 4, and have a mutual support force. The silicon filaments 5 arranged in a plurality of ring shapes can be connected to each other in a ring shape and can have mutual support force. Therefore, the silicon filament 5 and the silicon rod 6 (see Fig. 4) can be stably supported throughout the process of producing polysilicon. That is, the conduction of the silicon rod 6 can be prevented throughout the process.

FIG. 8 is a plan view of a silicon filament connected in a ring shape and connecting ring shapes to each other in a chemical vapor deposition reactor for producing polysilicon according to a fourth embodiment of the present invention. Referring to FIG. 8, the chemical vapor deposition reactor 400 according to the fourth embodiment further includes a connecting member 7 in the chemical vapor deposition reactor 300 according to the third embodiment.

The plurality of silicon filaments 5 are connected to the silicon bridge 3 and the supporter 4 to form concentric ring-shaped portions 501, 502 and 503. The connecting member 7 further connects the different ring-shaped portions 501, 502, 503.

That is, the silicon bridge 3 connects two adjacent ones of the silicon filaments 5 arranged in the respective ring-shaped portions 501, 502 and 503 at the conical portion 52 with each other. The supporter 4 connects the conical portions 52 of the silicon filaments 5 connected to each other by the different silicon bridges 3 above the silicon bridges 3. The connecting member 7 connects the conical portions 52 of the different ring-shaped portions 501, 502, 503 of the conical portion 52 to which the silicon bridge 3 or the supporter 4 is connected.

That is, the silicon filaments 5 have mutual support force by the ring-shaped portions 501, 502, 503 connected by the silicon bridge 3 and the supporter 4. Each of the ring-shaped portions 501, 502, and 503 may have a mutual support force by the connecting member 7. Therefore, the conduction of the silicon filament 5 and the silicon rod 6 (see Fig. 4) can be more effectively prevented throughout the process of producing polysilicon.

9 is a plan view of a supporter connecting three silicon filaments arranged in a triangle in a chemical vapor deposition reactor for producing polysilicon according to a fifth embodiment of the present invention. Referring to FIG. 9, the chemical vapor deposition reactor according to the fourth embodiment arranges a plurality of electrode chucks in a triangular shape in the reactor (not shown).

A plurality of silicon filaments (5) are arranged in a triangle in the reactor, and the supporter (34) is formed of a triangular plate to connect all three silicon filaments (5).

The supporter 34 has a second coupling hole H32 at each corner of the triangular plate. The supporter 34 connects the conical portion 52 of the three silicon filaments 5 arranged in a triangle to the second coupling hole H32 to connect the three silicon filaments 5 together. Therefore, the conduction of the silicon filament 5 and the silicon rod 6 (see Fig. 4) can be more effectively prevented throughout the process of producing polysilicon.

10 is a plan view of a supporter connecting four silicon filaments arranged in a square in a chemical vapor deposition reactor for producing polysilicon according to a sixth embodiment of the present invention. Referring to FIG. 10, the chemical vapor deposition reactor according to the sixth embodiment arranges a plurality of electrode chucks in a square in the reactor (not shown).

A plurality of silicon filaments (5) are arranged in a square in the reactor, and the supporter (44) is formed of a rectangular plate to connect all four silicon filaments (5).

The supporter 44 has a second coupling hole H42 at each corner of the rectangular plate. The supporter 44 connects the conical portion 52 of the four silicon filaments 5 arranged in a quadrangle to the second coupling hole H42 to connect the four silicon filaments 5 to each other. Therefore, the conduction of the silicon filament 5 and the silicon rod 6 (see Fig. 4) can be more effectively prevented throughout the process of producing polysilicon.

11 is a plan view of a supporter connecting a plurality of circularly arranged silicon filaments in a chemical vapor deposition reactor for producing polysilicon according to a seventh embodiment of the present invention. Referring to FIG. 11, the chemical vapor deposition reactor according to the seventh embodiment circularly arranges a plurality of electrode chucks in a reactor (not shown).

A plurality of silicon filaments (5) are arranged in a circular shape in the reactor, and the supporter (54) is formed as a circular plate to connect all the plurality of silicon filaments (5).

The supporter 54 has a plurality of second engagement holes H52 that are spaced along the circumferential direction of the circular plate. The supporter 54 connects the conical portion 52 of the plurality of circularly arranged silicon filaments 5 to the second engagement hole H52 to connect the plurality of silicon filaments 5. [

12 is a plan view of a supporter connecting a plurality of silicon filaments arranged in a circular strip shape in a strip shape in a chemical vapor deposition reactor for producing polysilicon according to an eighth embodiment of the present invention. Referring to FIG. 12, the chemical vapor deposition reactor according to the eighth embodiment arranges a plurality of electrode chucks (not shown) concentrically in the reactor.

The plurality of silicon filaments 5 are arranged concentrically in the reactor and the supporter 64 has a plurality of concentric concentric circles 641 and 642 to connect the plurality of silicon filaments 5 in a concentric band- .

The supporter 64 has a second coupling hole H62 that is spaced along the circumferential direction of the ring-shaped zones 641 and 642. [ The supporter 54 couples the conical portion 52 of the plurality of silicon filaments 5 arranged in a circle corresponding to the ring-shaped zones 641 and 642 to the second engagement hole H62 to form a plurality of silicon filaments 5 ).

That is, the silicon bridge (not shown) connects two adjacent ones of the silicon filaments 5 arranged in a ring shape to each other at the conical portion 52. The supporter 64 connects the conical portions 52 of the silicon filaments 5 connected to each other at different silicon bridges above the silicon bridge.

That is, the silicon filaments 5 are connected to the ring-shaped strips 641 and 642 by a silicon bridge (not shown) and a supporter 64 to have a mutual support force. The silicon filaments 5 arranged corresponding to the plurality of ring-shaped zones may be connected to the ring-shaped zones 641 and 642 and may have a mutual support force. Therefore, the silicon filament 5 and the silicon rod 6 (see Fig. 4) can be stably supported throughout the process of producing polysilicon. That is, the conduction of the silicon rod 6 can be prevented throughout the process.

13 is a plan view of a supporter connecting a plurality of silicon filaments arranged in a circular band shape in a band and connecting strips to each other in a chemical vapor deposition reactor for producing polysilicon according to a ninth embodiment of the present invention. Referring to FIG. 13, the chemical vapor deposition reactor according to the ninth embodiment further includes a connection portion 27 in the chemical vapor deposition reactor according to the eighth embodiment.

The plurality of silicon filaments 5 are connected by a silicone bridge (not shown) and a supporter 74 to form concentric ring-shaped zones 741 and 742. The connecting member 27 further connects the different ring-shaped zones 741 and 742.

That is, the silicon bridge (not shown) connects two adjacent ones of the silicon filaments 5 arranged in the ring-shaped zones 741 and 742 to each other at the conical portion 52. The supporter 74 connects the conical portions 52 of the silicon filaments 5 connected to each other by a different silicon bridge above the silicon bridge. The connecting portion 7 connects the ring-shaped zones 741 and 742 of the supporter 74 to each other.

That is, the silicon filaments 5 have mutual support forces by the ring-shaped strips 741 and 742 connected by the supporter 74 with the silicon bridge. Each of the ring-shaped zones 741 and 742 can have a mutual support force by the connecting member 27. [ Therefore, the conduction of the silicon filament 5 and the silicon rod 6 (see Fig. 4) can be more effectively prevented throughout the process of producing polysilicon.

14 is a connection state diagram of a silicon filament in a chemical vapor deposition reactor for producing polysilicon according to a tenth embodiment of the present invention. Referring to FIG. 14, in the chemical vapor deposition reactor 110 according to the tenth embodiment, the silicon bridge 23 further includes a third coupling hole H3 on the outer side of the first coupling hole H1, (84) forms a fourth coupling hole (H4) corresponding to the third coupling hole (H3). The third coupling hole H3 and the fourth coupling hole H4 are connected to each other by a coupling member 37 to be inserted.

For example, the connecting member 37 has a maximum diameter at an intermediate portion thereof and is reduced in diameter toward both ends so that the third coupling hole H3 of the silicon bridge 23 and the fourth coupling hole H3 of the supporter 84 H4, respectively.

The silicon bridge 23 is installed on the conical portion 52 as a first coupling hole H1 to connect the two silicon filaments 5 to each other. The supporter 84 is connected to the second coupling hole H3 of the silicon bridge 23 via the coupling member 37 via the fourth coupling hole H4 to connect the two neighboring silicon bridges 23 to each other do.

The conical portion 52 of the adjacent two silicon filaments 5 is connected to the silicon bridge 23 and the two neighboring silicon bridges 23 are connected to each other by the supporter 84 via the connecting member 37 . Therefore, the conduction of the silicon filament 5 and the silicon rod 6 (see Fig. 4) can be more effectively prevented throughout the process of producing polysilicon.

FIG. 15 is a view of supporting a silicon filament with a supporter in a chemical vapor deposition reactor for producing polysilicon according to an eleventh embodiment of the present invention, and FIG. 16 is a perspective view of the supporter of FIG. Referring to Figs. 15 and 16, in the chemical vapor deposition reactor 111 according to the eleventh embodiment, the supporter 94 includes a disk portion 941 and a support portion 942. Fig.

The circular plate 941 connects and supports the silicon rod 26 produced by passing the silicon filament 5 through the center through hole H94. The support portion 942 is connected to the lower surface of the circular plate 941 and installed on the bottom of the reactor to support the circular plate 941. For example, the support portion 942 may be formed of a plurality of legs.

Silicon rods 26 generated as silicon is deposited on the silicon filaments 5 are formed on the upper and lower surfaces of the disk 941, respectively. Therefore, during the polysilicon manufacturing process, the supporter 94 can more stably support the silicon filament 5 and the silicon rod 26.

17 is a view illustrating a state in which a silicon filament is supported by a supporter in a chemical vapor deposition reactor for producing polysilicon according to a twelfth embodiment of the present invention, and Fig. 18 is a perspective view of the supporter of Fig. 17 and 18, in the chemical vapor deposition reactor 112 according to the twelfth embodiment, the supporter 104 includes a disk portion 141 and a support portion 142.

The circular plate 141 connects and supports the silicon rod 36 generated by passing the silicon filament 5 through the central through-hole H14. The supporting portion 142 is connected to the lower surface of the circular plate 141, and is installed on the bottom of the reactor to support the circular plate 141. For example, the support portion 142 may be formed as a cylinder.

The silicon rod 36 produced as silicon is deposited on the silicon filament 5 is formed on the upper surface of the circular plate 141. Therefore, during the polysilicon manufacturing process, a silicon rod 36 is partially formed with respect to the silicon filament 5, and the supporter 104 can more stably support the silicon filament 5 and the silicon rod 26. [

Hereinafter, when the embodiments of the present invention are applied, the conduction incidence rate of the silicon rod 6 produced by depositing silicon on the silicon filament 5 will be described. For convenience, the description will be made with reference to the first embodiment.

19 is a graph showing the correlation between the number of silicon filaments and the conduction incidence rate depending on the presence or absence of a supporter. Referring to FIG. 19, as the number of the silicon rods 6 increases, the conduction incidence rate of the silicon rods 6 increases.

In the situation where the number of the silicon rods 6 is the same, the conduction incidence of the silicon rods 6 is lower when the supporter 4 is used than when the supporters are not used. That is, it can be seen that the supporter 4 lowers the conduction incidence rate of the silicon rod 6.

20 is a graph showing a correlation between the length of the silicon filament and the conduction incidence rate depending on whether or not the supporter is used. Referring to FIG. 20, as the length of the silicon filament 5 increases, the conduction rate of the silicon rod 6 increases.

In the situation where the length of the silicon filament 5 is the same, the conduction rate of the silicon rod 6 is lower when the supporter 4 is used than when the supporter is not used. That is, it can be seen that the supporter 4 lowers the conduction incidence rate of the silicon rod 6.

21 is a graph showing the correlation between the final diameter of the silicon rod and the conduction incidence rate depending on whether the supporter is used or not. Referring to FIG. 21, as the final diameter of the silicon rod 6 increases, the conduction rate of the silicon rod 6 increases.

In the situation where the final diameter of the silicon rod 6 is the same, the conduction rate of the silicon rod 6 is lower when the supporter 4 is used than when the supporter is not used. That is, it can be seen that the supporter 4 lowers the conduction incidence rate of the silicon rod 6.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, And it goes without saying that the invention belongs to the scope of the invention.

1: Reactor 2: Electrode chuck
3, 31, 32, 23: Silicon bridge
4, 24, 34, 44, 54, 64, 74, 84, 94, 104:
5: silicon filament 6, 26, 36: silicon rod
7, 37: connecting member 27: connecting portion
51: Cylinder 52: Cone Loop
100, 200, 300, 400, 110, 111, 112: chemical vapor deposition reactor
501, 502, 503: ring shaped part 511: lower part of the cylindrical part
512: upper part of the cylinder 513: engaging groove
514: engaging projections 641, 642, 741, 742:
941, 141: disk portion 942, 142: support portion
H1: First coupling port H2, H22, H32, H42, H52, H62: Second coupling port
H3: Third coupling port H4: Fourth coupling port
H14, H94: Through hole P1: Upper end of the cone loop
P2: Lower part of the silicon bridge P3: Middle of the cylinder
P4: Bottom of the cylinder

Claims (17)

A reactor for introducing and discharging a reaction gas;
An electrode chuck provided on the bottom of the reactor to fix the silicon rods formed of silicon deposited on the plurality of silicon filaments respectively;
At least two silicon bridges connecting two neighboring silicon filaments to each other; And
Among the two silicon bridges, a supporter that connects the silicon filaments of one side of the silicon bridge and the silicon filaments of the other side of the silicon bridge
≪ / RTI >
The method according to claim 1,
The silicon filaments may be,
A cylindrical portion fixed to the electrode chuck and a conical portion connected to an upper end of the cylindrical portion,
Wherein the silicon bridge comprises:
And a plurality of silicon filaments connected to the conical portion,
Chemical vapor deposition reactor for the production of polysilicon.
3. The method of claim 2,
The supporter includes:
At least one of the cylindrical portion of the silicon filament and the conical portion of the silicon filament
Chemical vapor deposition reactor for the production of polysilicon.
3. The method of claim 2,
The supporter includes:
Wherein the silicon filament is connected to the conical portion of the silicon filament connected to the one side silicon bridge and the conical portion of the silicon filament connected to the other side silicon bridge by a pair of second coupling ports,
Wherein the second engagement portion comprises:
And is formed as an inclined surface having a lower diameter larger than the upper diameter so as to correspond to the conical portion
Chemical vapor deposition reactor for the production of polysilicon.
The method according to claim 1,
The plurality of silicon filaments may include a plurality of silicon filaments,
A plurality of rings arranged in a ring shape concentric with the reactor and connected to the silicon bridge by the supporter
Chemical vapor deposition reactor for the production of polysilicon.
The method according to claim 6,
The plurality of silicon filaments may include a plurality of silicon filaments,
And a ring-shaped portion connected to the silicon bridge and the supporter to form a concentric ring-
The different ring features are further connected to the connection member
Chemical vapor deposition reactor for the production of polysilicon.
The method according to claim 1,
The plurality of silicon filaments may include a plurality of silicon filaments,
Said reactor being arranged in a triangular shape,
The supporter includes:
And a triangular plate having a second coupling portion at a corner to connect all three silicon filaments
Chemical vapor deposition reactor for the production of polysilicon.
The method according to claim 1,
The plurality of silicon filaments may include a plurality of silicon filaments,
A reactor disposed in a quadrangular shape,
The supporter includes:
And a rectangular plate having a second coupling hole at a corner to connect all four silicon filaments
Chemical vapor deposition reactor for the production of polysilicon.
The method according to claim 1,
The plurality of silicon filaments may include a plurality of silicon filaments,
A reactor disposed in the reactor,
The supporter includes:
And a plurality of second engagement portions spaced apart in the circumferential direction so as to connect all of the plurality of silicon filaments
Chemical vapor deposition reactor for the production of polysilicon.
The method according to claim 1,
The plurality of silicon filaments may include a plurality of silicon filaments,
Wherein said reactor is concentrically disposed within said reactor,
The supporter includes:
And a plurality of second joining openings concentric with the plurality of silicon filaments to concentrically connect the plurality of silicon filaments in a strip shape and spaced along the circumferential direction
Chemical vapor deposition reactor for the production of polysilicon.
11. The method of claim 10,
The supporter includes:
And a connecting portion for connecting the ring-
≪ / RTI > further comprising:
3. The method of claim 2,
Wherein the silicon bridge comprises:
A third coupling hole is formed on the outer side of the first coupling hole,
The supporter includes:
A fourth coupling hole corresponding to the third coupling hole is formed,
And the third coupling means and the fourth coupling means,
Are connected to each other by a connecting member
Chemical vapor deposition reactor for the production of polysilicon.
The method according to claim 1,
The supporter includes:
A chemical vapor deposition reactor for making polysilicon formed from an electrical insulating material.
14. The method of claim 13,
The supporter includes:
Any of fused silica (Fused silica, SiO 2), silicon nitride (Si 3 N 4), alumina (Al 2 O 3), zirconia (ZrO 2), magnesia (MgO), and mullite (3Al 2 O 3 · 2SiO 2 ) as one / RTI > A chemical vapor deposition reactor for the production of polysilicon.
A reactor for introducing and discharging a reaction gas;
An electrode chuck installed at the bottom of the reactor to fix silicon rods formed of silicon deposited on the silicon filament; And
A supporter for connecting and supporting the silicon filament and the silicon rod,
/ RTI >
The supporter includes:
A circular plate which penetrates the silicon filament through a central through hole to connect the silicon filament, and
And a support member connected to a bottom surface of the disk and installed on the bottom of the reactor,
≪ / RTI >
16. The method of claim 15,
The support portion
A chemical vapor deposition reactor for making polysilicon formed by a plurality of legs.
16. The method of claim 15,
The support portion
A chemical vapor deposition reactor for the production of polysilicon formed into a cylinder.
KR1020130115258A 2013-09-27 2013-09-27 Chemical vapor deposition reactor for producing polysilicon KR101654148B1 (en)

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TW103133807A TWI542742B (en) 2013-09-27 2014-09-29 Chemical vapor deposition reactor for producing polysilicon

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US9683286B2 (en) * 2006-04-28 2017-06-20 Gtat Corporation Increased polysilicon deposition in a CVD reactor
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US20090191336A1 (en) * 2008-01-30 2009-07-30 Mohan Chandra Method and apparatus for simpified startup of chemical vapor deposition of polysilicon
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