TWI542084B - 端子連接構造及半導體裝置 - Google Patents

端子連接構造及半導體裝置 Download PDF

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TWI542084B
TWI542084B TW104103428A TW104103428A TWI542084B TW I542084 B TWI542084 B TW I542084B TW 104103428 A TW104103428 A TW 104103428A TW 104103428 A TW104103428 A TW 104103428A TW I542084 B TWI542084 B TW I542084B
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Taiwan
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terminal
hardness
underlayer
base layer
male
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TW104103428A
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TW201603397A (zh
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Takuya Kadoguchi
Arata Harada
Takahiro Hirano
Masayoshi Nishihata
Keita Fukutani
Tomomi Okumura
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Toyota Motor Co Ltd
Denso Corp
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Publication of TW201603397A publication Critical patent/TW201603397A/zh
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    • H01R13/02—Contact members
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Description

端子連接構造及半導體裝置
本揭示係關於端子連接構造等。
所知的有將電子零件之外部連接用之端子(公側)插入至基板之貫通孔(母側)，使用焊錫等與基板之配線連接的構造。就以一例而言，可以舉出將半導體元件樹脂密封之半導體模組之外部連接用之端子插入至基板之貫通孔，且使用焊錫等與基板之配線連接的半導體裝置(參照例如專利文獻1)。
[先前技術文獻] [專利文獻]
[專利文獻1]日本特開2010-199622號公報
但是，在上述專利文獻1所揭示之技術中，因為需要使用焊錫等而連接端子和配線之工程，故製造工程繁雜。因此，並非使用焊錫等而連接端子和配線，而係以使用不 使用焊錫等而將公側之端子與母側之端子連接之端子連接構造為佳。此時，以成為充分考慮端子之耐久性的構造為有效。
本揭示之目的係提供可以提高端子之耐久性的端子連接構造等。
本揭示之一觀點係提供端子連接構造，其具備公端子，和母端子，其係具有彈性，以從兩側夾持上述公端子之方式，與上述公端子嵌合，上述公端子包含母材、被上述母材覆蓋之第1基底層，和被上述第1基底層覆蓋之第2基底層，和被上述第2基底層覆蓋之最表層，上述第1基底層之硬度和上述第2基底層之硬度不同。
若藉由本揭示，可以取得提高端子之耐久性的端子連接構造等。
1‧‧‧半導體裝置
10‧‧‧半導體模組
11、12、13、14、15‧‧‧金屬板
16‧‧‧公端子
18‧‧‧密封樹脂
20‧‧‧基板
30‧‧‧連接器
31‧‧‧母端子
161、311‧‧‧金屬材
162‧‧‧金屬膜
1621‧‧‧第1基底層
1622‧‧‧第2基底層
163、312‧‧‧金屬膜
P‧‧‧接觸壓力
△L‧‧‧滑動距離
圖1表示與第1實施型態有關之半導體裝置的圖示。
圖2表示與第1實施型態有關之半導體模組的斜視圖。
圖3為例示公端子和母端子嵌合之部分之構造的剖面模式圖。
圖4為用以針對提升耐久性進行說明的剖面示意圖。
圖5為降低由於第1基底層1621及第2基底層1622所引起的母材翹曲之效果的說明圖。
圖6為提高第2基底層1622(無電解NiP電鍍)之硬度之方法的說明圖。
圖7為提高第2基底層1622(無電解NiP電鍍)之硬度之其他方法的說明圖。
以下，一面參照附件圖面一面針對各實施例予以詳細說明。在各實施型態中，就以端子連接構造之一例而言，雖然針對作為半導體模組之外部連接用之端子的公端子，與被內置在安裝於基板之連接器的母端子嵌合之半導體裝置進行說明，但是並不限定於此。例如，即使作為不內置半導體元件之電子零件(例如，電容器等)之外部連接用之端子的公端子，與被配置在安裝於基板之連接器的母端子嵌合亦可。又，即使從安裝在第1基板之第1連接器突出之公端子，與被內置在安裝於第2基板之第2連接器的母端子嵌合亦可。並且，在各圖面中，有對相同構成部分賦予相同符號，省略重覆之說明的情形。
(第1實施型態)
圖1為例示與第1實施型態有關之半導體裝置之圖示，(a)為斜視圖，(b)為與(a)之YZ平面平行，沿著通過 公端子16(後述)之平面的剖面圖。當參照圖1時，半導體裝置1具有半導體模組10、基板20和連接器30。在半導體裝置1中，作為半導體模組10之外部連接用之端子的公端子16及17經由基板20與被內置在連接器30之母端子31嵌合。
以下，針對半導體裝置1詳細說明。首先，針對半導體模組10、基板20及連接器30予以簡單說明，接著針對半導體模組10之公端子16及17和連接器30之母端子31嵌合之部分之構造(端子連接構造)予以詳細說明。
首先，針對半導體模組10進行說明。半導體模組10若具備作為外部連接用之端子的公端子時，則不論內部構造，在本實施型態中，以具備IGBT(Insulated gate bipolar transistor)及二極體之半導體模組為例進行下述說明。
圖2表示與第1實施型態有關之半導體模組的斜視圖。參照圖1及圖2，半導體模組10具有金屬板11、金屬板12、金屬板13、金屬板14、金屬板15、複數公端子16、複數公端子17、密封樹脂18。
在半導體模組10中，以夾持金屬板11及14之方式，安裝有第1半導體元件(無圖示)。又，以夾持金屬板13及15之方式，安裝有第2半導體元件(無圖示)。
金屬板11、12及13係與第1及第2半導體元件中之任一方或雙方之電極電性連接，可以當作第1及第2半導體元件之輸入輸出端子之一部分使用。又，金屬板11~15可以將在第1半導體元件或第2半導體元件動作時產 生之熱排出至外部。
作為金屬板11~15之材料，可以使用例如銅(Cu)或鋁(Al)等。即使在金屬板11~15之表面施予電鍍處理亦可。金屬板11~15係可以從例如引線框架製作。
第1半導體元件為例如被搭載在車輛之反相器電路或昇壓降壓轉換器電路之一部分的IGBT，及被連接於IGBT之射極和集極之間的回流用之二極體。即使針對第2半導體元件，也與第1半導體元件相同。
公端子16為成為半導體模組10之外部連接用之端子的金屬製之端子，例如，經由接合引線，而與第1半導體元件或溫度感測器等電性連接。公端子17為成為半導體模組10之外部連接用之端子的金屬製之端子，例如，經由接合引線，而與第2半導體元件或溫度感測器等電性連接。
金屬板11~15、公端子16及17，以及第1及第2半導體元件藉由密封樹脂18被密封。但是，金屬板11~13之端部從密封樹脂18突出至外部。又，金屬板14及15之特定的面從密封樹脂18露出至外部。又，公端子16及17之端部從密封樹脂18突出至外部。並且，金屬板11~13之端部與公端子16及17之端部突出至Z方向之相反方向。作為密封樹脂18之材料可以使用例如含有填料之環氧系樹脂等。
參照圖1，基板20為安裝半導體模組10之部分。基板20可以具備驅動半導體模組10之電路(無圖示)。作為 基板20，可以使用將環氧樹脂等之絕緣性樹脂浸漬在玻璃纖維布之所謂玻璃環氧基板或矽基板、陶瓷基板等。即使在基板20設置多層配線層亦可。
在基板20形成有用以插入半導體模組10之公端子16及17之複數貫通部20x。各貫通部20x之平面形狀配合與公端子16及17之長邊方向呈垂直之方向的剖面形狀，可以設為例如矩形狀或圓形狀。並且，平面形狀係指從基板20之一方之面20a之法線方向觀看對象物之形狀。
因可插入公端子16及17，故各貫通部20x之平面形狀被形成大於與公端子16及17之長邊方向呈垂直之方向的剖面形狀。因此，在各貫通部20x之內壁面和公端子16及17之側面之間產生間隙。貫通部20x可設為例如貫通基板20之孔或缺口等。
連接器30係被安裝在基板20之一方之面20a側。連接器30具備有與公端子16及17之端子之個數對應的母端子31。各母端子31可以與被形成在基板20之電路電性連接。
在連接器30之母端子31，從與基板20之一方之面20a相反側之面，即另一方的面20b經由貫通部20x被插入半導體模組10之公端子16及17，兩者嵌合。依此，可以將半導體模組10之第1及第2半導體元件經由公端子16及17、連接器30之母端子31，與被形成在基板20之配線(電路)電性連接。
並且，在半導體裝置1中，雖然一個半導體模組10經由基板20與連接器30嵌合，但是即使複數之半導體模組10經由基板20而與對應於各半導體模組10之連接器30嵌合亦可。
接著，針對半導體模組10之公端子16及17和連接器30之母端子31嵌合之部分的構造(端子連接構造)詳細說明。圖3為例示公端子和母端子嵌合之部分之構造的剖面示意圖，放大例示與圖1(b)對應之剖面之一部分。並且，公端子17之圖示雖然省略，但是公端子17與公端子16為相同構造。
參照圖3，公端子16具有作為被形成在中心側之母材的金屬材161，覆蓋金屬材161而形成之金屬膜162、覆蓋金屬膜162而被形成在公端子16之最表面的作為表面處理材之金屬膜163。並且，母材為成為用以形成表處理材等之基體的部分。
作為金屬材161，可以使用例如銅(Cu)或銅合金、鋁(Al)或鋁合金等為主成分之金屬板。金屬材161之厚度可以設為例如0.2~0.8mm程度。並且，主成分係指於在其構件中含有複數金屬之情況或含有添加物等之情況下，在其構件中所佔之比例(重量%)為最大的物質。
金屬膜162包含覆蓋金屬材161之第1基底層1621，和覆蓋第1基底層1621之第2基底層1622。因此，金屬膜163覆蓋第2基底層1622。並且，金屬膜162除了第1基底層1621和第2基底層1622之外，即使又含 有1層以上之層亦可。
第1基底層1621相對於第2基底層1622具有不同的硬度(維氏硬度)。具體而言，第2基底層1622之硬度較第1基底層1621之硬度高。第1基底層1621藉由Ni電解電鍍而形成，第2基底層1622係藉由NiP無電解電鍍而形成。第1基底層1621之硬度較佳為150~500[HV]，第2基底層1622之硬度最佳為500~1000[HV]。
並且，在本實施型態中，雖然第1基底層1621及第2基底層1622分別藉由Ni及NiP形成，但是即使使用其他材料亦可。例如，使用錫(Sn)、銅(Cu)、銀(Ag)、鉛(Pb)、鋅(Zn)、磷(P)、硼(B)、鉻(Cr)、錳(Mn)、鐵(Fe)、鈷(Co)、鈀(Pd)、鉑(Pt)、鈦(Ti)、鋯(Zr)、釩(V)、鉬(Mo)、鎢(W)、銦(In)、銻(Sb)、鉍(Bi)等即可，再者即使使用鎳-硼(NiB)等之複合材亦可。
作為金屬膜163，可以使用以例如金(Au)、鉑(Pt)、鈀(Pd)、銠(Rh)等之貴金屬為主成分之金屬膜。金屬膜163之厚度可以設為例如0.3~0.8μm程度。金屬膜163可以藉由例如電鍍法形成在金屬膜162上。
母端子31具有作為母材之金屬材311，和覆蓋金屬材311而被形成在母端子31之最表面的作為表面處理材的金屬膜312。
母端子31具有彈性。被配置公端子16之兩側的母端子31為相同構造，例用彈性以從兩側夾持公端子16之方 式在兩點被按壓。母端子31之金屬膜312與公端子16之金屬膜163接觸。
插入公端子16之前的母端子31係隔著可插入公端子16且插入後藉由彈性從兩側按壓公端子16之程度的間隔，被相向配置成金屬膜312側朝向內側(與公端子16接觸之側)。並且，公端子16之兩側之母端子31係在連結器30內被一體化互相導通(無圖示)。
作為金屬材311，可以使用例如銅(Cu)或銅合金、鋁(Al)或鋁合金等為主成分之金屬板。金屬材311之厚度可以設為例如0.1~0.3mm程度。並且，作為母端子31之母材的金屬材311相對於作為公端子16之母材的金屬材161具有相同或不同的硬度即可。例如，金屬材311及金屬材161之硬度為40~200[HV]即可。
作為金屬膜312，可以使用以例如金(Au)、鉑(Pt)、鈀(Pd)、銠(Rh)等之貴金屬為主成分之金屬膜。金屬膜312之厚度可以設為例如0.3~0.8μm程度。金屬膜312可以藉由例如電鍍法形成在金屬膜311上。雖然金屬膜312之硬度為任意，但是可以設為例如與金屬膜163之硬度相同。
並且，母端子31即使具有被夾持於金屬材311和金屬膜312之間的金屬膜亦可。被夾持在金屬材311和金屬膜312之間的金屬膜之材料或厚度為任意。
若藉由本實施型態時，如上述般，因具有與公端子16之金屬膜162之第1基底層1621和第2基底層1622 不同之硬度，故即使在半導體裝置1容易受到振動的環境下使用之情況，亦可以提升公端子16之耐久性。並且，容易受振動之環境可舉出例如半導體裝置1被搭載在移動體之情況等。移動體為例如汽車、機車或電車等。
在此，一面參照圖4，一面針對提升耐久性之效果，更詳細說明。圖4為示意性表示公端子和母端子嵌合，在容易受到振動之環境下使用的樣子。在圖4中，公端子16係藉由母端子31以接觸壓力P從兩側在兩點被按壓。又，公端子16及母端子31受到振動，相對性地僅滑動距離△L滑動。
此時，將磨耗量設為W，將摩擦係數設為K，將維氏硬度設為Hv時，式(數1)之關係成立。並且，摩擦係數K係依存於公端子16之金屬膜163及母端子31之金屬膜312之表面粗度或接觸面積等而決定。
可知藉由式(數1)，當縮小接觸壓力P時，可以降低磨耗量W。又，可知當縮小滑動距離△L時，可以降低磨耗量W。又，可知當增加維氏硬度Hv時，可以降低摩耗量W。
然而，在僅增加公端子16之滑動部分之硬度的構成(例如，不具備第1基底層1621之構成)中，雖然可以降 低磨耗量W，但是有第2基底層1622(NiP無電解電鍍)容易產生龜裂(破裂)之問題。另一方面，在降低公端子16之滑動部分之硬度的構成(例如，不具備第2基底層1622之構成)中，雖然防止龜裂，但是因公端子16之滑動部分之硬度下降，故最表層之金屬膜163等容易磨耗。
此點，在本實施型態中，如上述般，公端子16之滑動部分包含第1基底層1621及第2基底層1622，第1基底層1621之硬度較第2基底層1622之硬度低。因此，相對於接觸壓力P，第1基底層1621當作應力緩和層發揮功能，即使在第2基底層1622之硬度高之情況下，亦可以降低第2基底層1622破裂的可能性。再者，公端子16之硬度因第2基底層1622而變高，即使在受到振動的環境下，也減少磨耗量W。其結果，可以減少公端子16之金屬膜163之磨耗量W(滑動磨耗量)。因此，在本實施型態中，可以將與母端子31的接觸壓力P保持在一定以上，並且提高公端子16之耐久性。
圖5為降低由於第1基底層1621及第2基底層1622所引起的母材翹曲之效果的說明圖。
與對母材(Cu)進行電解Ni電鍍之時，如圖5(A)所示般，於緊跟著電鍍之後，電鍍層容易受到拉伸應力。此時，如圖5(A)所示般，成為母材朝向上凸之方向翹曲的傾向。再者，於對母材(Cu)進行無電解Ni電鍍(P：7~13%)之情況下，如圖5(B)所示般，電鍍層容易受到壓縮應力。此時，如圖5(B)所示般，成為母材朝向上下凸之方向翹曲 的傾向。
另一方面，在對母材(Cu)進行電解Ni電鍍及無電解NiP電鍍之雙方之情況下，如圖5(C)所示般，因成為電解Ni電鍍層之拉伸應力和無電解NiP電鍍層之壓縮應力抵消之方向，故可以降低母材之翹曲。因此，在本實施型態中，藉由形成第1基底層1621及第2基底層1622，可以降低作為母材之公端子16之金屬材161之翹曲。
再者，在本實施型態中，因受到壓縮應力之第2基底層1622成為金屬膜163之直接性的基底層，故假設在第2基底層1622之膜厚變厚殘留應力變高之情況或在製造工程中產生熱應力之情況下，亦可以降低金屬膜163破裂之可能性。該係因一般而言，相對於壓縮的材料強度顯然高於相對於拉伸的材料強度之故。
再者，在本實施型態中，用以形成第2基底層1622之無電解NiP電鍍係可以將第1基底層1621(電解Ni電鍍)當作種子層而進行。依此，可以簡化製造工程。
圖6及圖7為提高第2基底層1622(無電解NiP電鍍)之硬度之方法的說明圖。
第2基底層1622(無電解NiP電鍍)之硬度如圖6(A)所示般，即使藉由調整熱處理溫度來提高亦可。再者，第2基底層1622之硬度即使如圖6(B)所示般藉由增厚電鍍厚度來提高亦可。再者，第2基底層1622之硬度即使如圖7(A)所示般藉由增長熱處理時間來提高亦可。再者，第2基底層1622之硬度即使如圖7(B)所示般藉由調整P之含 有率來提高亦可。
(第1實施型態之變形例)
即使在第1實施型態之變形例中，也與第1實施型態相同，第1基底層1621相對於第2基底層1622具有不同的硬度。但是，在第1實施型態之變形例中，與第1實施型態不同，第1基底層1621之硬度較第2基底層1622之硬度高。第2基底層1622藉由Ni電解電鍍而形成，第1基底層1621係藉由NiP無電解電鍍而形成。第2基底層1622之硬度較佳為150~500[HV]，第1基底層1622之硬度最佳為500~1000[HV]。
即使藉由1實施型態之變形例，也與第1實施型態相同，相對於接觸壓力P，第2基底層1622方作應力緩和層而發揮功能，即使在第1基底層1621之硬度高之情況下，亦可以降低第1基底層1621破裂之可能性(可以提高耐久性)。再者，公端子16之硬度因第1基底層1621而變高，即使在受到振動的環境下，也減少磨耗量W。其結果，可以減少公端子16之金屬膜163之磨耗量W(滑動磨耗量)(可以提高耐久性)。
再者，即使藉由第1實施型態之變形例，也與第1實施型態相同，藉由形成第1基底層1621及第2基底層1622，可以降低作為母材之公端子16之金屬材161之翹曲。
再者，若藉由第1實施型態之變形例時，可以在將引 線框架全體予以無電解NiP電鍍之後，僅對最表層之接點部部分性地進行電解Ni電鍍及電解Au電鍍和連續處理。並且，此時，電解Au電鍍形成金屬膜163。依此，可以簡化製造工程。
以上，雖然針對各實施例而詳細敘述，但是並不限定於特定之實施例，可在申請專利範圍中所記載之範圍內，做各種變形及變更。再者，也可將上述實施例之構成要素全部或複數組合。
例如，在上述實施型態及其變形例中，雖然以維氏硬度作為指標而表示對象物之硬度的不同，但是即使以維氏硬度以外作為指標而表示對象物之硬度的不同亦可。
再者，藉由上述實施型態及其變形例的端子連接構造，雖然在容易受到振動之環境中所使用之情況下達到特定效果，但是藉由上述實施型態及其變形例的端子連接構造即使在容易受到振動之環境以外當然亦可以使用。
並且，本申請案係根據2014年3月10日申請的日本國專利申請第2014-046594號而主張優先權，其整體內容在此被本申請案援用以作為參考。
16‧‧‧公端子
31‧‧‧母端子
161‧‧‧金屬材
162‧‧‧金屬膜
1621‧‧‧第1基底層
1622‧‧‧第2基底層
163‧‧‧金屬膜
311‧‧‧金屬材
312‧‧‧金屬膜

Claims (6)

  1. 一種端子連接構造，具備：公端子；和母端子，其係具有彈性，以從兩側夾持上述公端子之方式，與上述公端子嵌合，上述公端子包含母材、被上述母材覆蓋之第1基底層，和被上述第1基底層覆蓋之第2基底層，和被上述第2基底層覆蓋之最表層，上述第1基底層之硬度和上述第2基底層之硬度不同。
  2. 如請求項1所記載之端子連接構造，其中上述第1基底層之硬度較上述第2基底層之硬度高。
  3. 如請求項2所記載之端子連接構造，其中上述第1基底層為無電解電鍍層，上述第2基底層為電解電鍍層。
  4. 如請求項1所記載之端子連接構造，其中上述第2基底層之硬度較上述第1基底層之硬度高。
  5. 如請求項4所記載之端子連接構造，其中上述第2基底層為無電解電鍍層，上述第1基底層為電解電鍍層。
  6. 一種半導體裝置，具備有請求項1至5中之任一項所記載之端子連接構造，該半導體裝置之特徵在於：上述公端子係半導體模組之外部連接用之端子，上述母端子係被內置在安裝於基板之連接器的端子。
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