TWI539250B - A registration device and an exposure device having a registration device - Google Patents

A registration device and an exposure device having a registration device Download PDF

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Publication number
TWI539250B
TWI539250B TW101105586A TW101105586A TWI539250B TW I539250 B TWI539250 B TW I539250B TW 101105586 A TW101105586 A TW 101105586A TW 101105586 A TW101105586 A TW 101105586A TW I539250 B TWI539250 B TW I539250B
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coordinate position
alignment
radius
mark
alignment mark
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TW101105586A
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Chinese (zh)
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TW201243522A (en
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Duk Lee
Akira Nakazawa
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Orc Mfg Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0266Marks, test patterns or identification means
    • H05K1/0269Marks, test patterns or identification means for visual or optical inspection
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09818Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
    • H05K2201/09918Optically detected marks used for aligning tool relative to the PCB, e.g. for mounting of components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0008Apparatus or processes for manufacturing printed circuits for aligning or positioning of tools relative to the circuit board

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

對位裝置及具有對位裝置之曝光裝置 Registration device and exposure device with alignment device

本發明係有關於對位裝置及具有對位裝置之曝光裝 置,其係用於執行在絕緣層和導體層交互層積而成的高密度多層構造的印刷基板等的對位。 The invention relates to a aligning device and an exposure device with a aligning device The alignment is performed to perform alignment of a printed substrate or the like of a high-density multilayer structure in which an insulating layer and a conductor layer are alternately laminated.

在由絕緣層和導體層層積而成的高密度多層構造的印刷基板的製造程序中,層之間的連接及電路圖形的位置必須要精確地對準。例如在用建造法(build up)製造多層構造的印刷基板的情況下,係對準已形成圖形的目前層的電路圖形而形成下一層的電路圖形。一般而言,在對準目前層的電路圖形和下一層的電路圖形時,在印刷基板以及繪有電路圖形的光罩上分別形成對準位置用的對準標記。然後,精確地對準印刷基板的對準標記和光罩的對準標記,藉此將電路圖形對位於印刷基板,並照射包含紫外線的光以將電路圖形曝光轉印。 In the manufacturing process of a printed substrate having a high-density multilayer structure in which an insulating layer and a conductor layer are laminated, the connection between layers and the position of the circuit pattern must be accurately aligned. For example, in the case of manufacturing a printed circuit board having a multilayer structure by a build up, the circuit pattern of the current layer in which the pattern has been formed is aligned to form a circuit pattern of the next layer. In general, when the circuit pattern of the current layer and the circuit pattern of the next layer are aligned, alignment marks for alignment positions are respectively formed on the printed substrate and the photomask on which the circuit pattern is drawn. Then, the alignment mark of the printed substrate and the alignment mark of the reticle are precisely aligned, whereby the circuit pattern is placed on the printed substrate, and the light containing the ultraviolet ray is irradiated to expose the circuit pattern to the transfer.

例如,在專利文獻1中揭露了如上述的對準基板和電路圖案的對位方法及曝光裝置。專利文獻1的曝光裝置,分別在印刷基板及光罩上設置複數個對準標記,求出對準標記的重心並執行對位以使得重心一致。而且,專利文獻1的曝光裝置將上述的對位重複執行N次,並將具有在特定值以下最小偏移的對位位置決定為最適當的對位位置。 For example, Patent Document 1 discloses a alignment method and an exposure apparatus for aligning a substrate and a circuit pattern as described above. In the exposure apparatus of Patent Document 1, a plurality of alignment marks are provided on the printed substrate and the photomask, and the center of gravity of the alignment marks is obtained and alignment is performed so that the center of gravity coincides. Further, the exposure apparatus of Patent Document 1 repeatedly performs the above-described registration for N times, and determines the alignment position having the smallest offset below the specific value as the most appropriate alignment position.

先前技術文獻 Prior technical literature 專利文獻 Patent literature

[專利文獻1]特開2005-274687 [Patent Document 1] Special Opening 2005-274687

不過,對位係對於目前層的對準標記設定一定的特定範圍,只要進入該特定範圍就完成對位。因此,當反覆進行積層時,誤差就隨之累積,第1層的對準標記和最上層的對準標記大幅偏移,從本來應該在的位置(光罩的設計座標位置等)漸次偏移。 However, the alignment system sets a certain specific range for the alignment mark of the current layer, and the alignment is completed as long as the specific range is entered. Therefore, when the lamination is repeated, the error accumulates, and the alignment mark of the first layer and the alignment mark of the uppermost layer are largely shifted, and are gradually shifted from the position where they should be (the design coordinate position of the mask, etc.). .

如專利文獻1所示,印刷基板及光罩會由於溫度或濕度及其他工程上的理由而發生伸縮或變形,如上述的印刷基板及光罩的對準標記之間的對位中,即使能夠完成目前層的對準標記之間的對位,也無法保證和之前曝光的對準標記的對位精確度。因此,曝光複數層而形成電路圖形時,最後形成的電路圖案會從本來應該在的位置(光罩的設計座標位置等)偏移,而造成無法整合安裝在印刷基板表面的IC或LSI等元件的問題。 As shown in Patent Document 1, the printed circuit board and the photomask are stretched or deformed due to temperature, humidity, and other engineering reasons. For example, in the alignment between the alignment marks of the printed circuit board and the photomask described above, even Completing the alignment between the alignment marks of the current layer also does not guarantee alignment accuracy with the previously exposed alignment marks. Therefore, when a plurality of layers are exposed to form a circuit pattern, the circuit pattern formed at the end is shifted from the position where it should be (the design coordinate position of the mask, etc.), and components such as ICs or LSIs that cannot be mounted on the surface of the printed substrate cannot be integrated. The problem.

本發明係有鑑於上述問題點而提出,提供對位裝置及具有對位裝置之曝光裝置,其能夠適當地修正曝光位置以使其接近本來應該在的位置(光罩的設計座標位置等),並同時將電路圖形曝光。 The present invention has been made in view of the above problems, and provides a aligning apparatus and an exposure apparatus having a aligning apparatus capable of appropriately correcting an exposure position so as to be close to a position (a design coordinate position of a reticle, etc.) At the same time, the circuit pattern is exposed.

第1樣態的對位裝置,其係執行繪有預定要轉印的圖形及光罩標記的光罩與被轉印該圖形及對準標記的基板的對準。對位裝置包含:儲存部,其係儲存該對準標記應該要形成在該基板的設計座標位置;測定部,其係測定被轉 印到該基板的對準標記的座標位置;以及計算部,其係計算將該測定部測定得到的該對準標記的座標位置向該設計座標位置移動特定距離之目標座標位置。而且,該目標座標位置和該光罩的該光罩標記相對地對位。 The alignment device of the first aspect is configured to perform alignment of a mask on which a pattern to be transferred and a mask mark are to be transferred, and a substrate on which the pattern and the alignment mark are transferred. The aligning device comprises: a storage portion for storing the alignment mark to be formed at a design coordinate position of the substrate; and a measuring portion for measuring the rotation a coordinate position of the alignment mark printed on the substrate; and a calculation unit that calculates a target coordinate position at which the coordinate position of the alignment mark measured by the measurement unit is moved to the design coordinate position by a specific distance. Moreover, the target coordinate position is aligned with the reticle mark of the reticle.

第2樣態的對位裝置的計算部,係將連接該對準標記的座標位置和該設計座標位置之直線上的一點作為該目標座標位置。 The calculation unit of the registration device of the second aspect is a point on a straight line connecting the coordinate position of the alignment mark and the design coordinate position as the target coordinate position.

第3樣態的對位裝置的計算部,係計算連接該設計座標位置和該對準標記的座標位置之直線與以該設計座標位置為圓心之特定半徑的圓周的交點、以及該直線與以該對準標記的座標位置為圓心之第1半徑的圓周的交點,並以該等交點的中心作為該目標座標位置。 The calculation unit of the third position alignment device calculates an intersection of a line connecting the design coordinate position and the coordinate position of the alignment mark with a circumference of a specific radius centered on the design coordinate position, and the line and The coordinate position of the alignment mark is the intersection of the circumference of the first radius of the center of the circle, and the center of the intersection is used as the target coordinate position.

第4樣態的對位裝置的計算部,係計算以該設計座標位置為圓心之特定半徑的圓周與以該對準標記的座標位置為圓心之第1半徑的圓周的2個交點,並以連接該2個交點的直線和連接該對準標記的座標位置和該設計座標位置之直線的交點作為該目標座標位置。 The calculation unit of the alignment device of the fourth aspect calculates two intersections of a circumference having a specific radius of the design coordinate position and a circumference of the first radius of the center of the coordinate position of the alignment mark, and The intersection of the straight line connecting the two intersection points and the line connecting the coordinate position of the alignment mark and the design coordinate position is taken as the target coordinate position.

第5樣態的對位裝置,將包含該目標座標位置的特定範圍內,作為轉印到次一層的對準標記的領域以進行對位。 The fifth position alignment device will be in the specific range including the target coordinate position as the area of the alignment mark transferred to the next layer to be aligned.

第6樣態的對位裝置,係以該目標座標位置為圓心之第2半徑內作為該特定範圍。 In the sixth embodiment, the alignment device has the second radius within the center of the target coordinate position as the specific range.

第7樣態的對位裝置的計算部,係將以該設計座標位置為圓心之特定半徑內的容許範圍與以該對準標記的座標位置為圓心之第1半徑內的容許範圍的重疊區域作為該特 定範圍。 The calculation unit of the seventh embodiment of the registration device is an overlapping region within a specific radius of the center of the design coordinate position and an allowable range within the first radius centered on the coordinate position of the alignment mark. As this special Set the range.

第8樣態的對位裝置中,係由該計算部,依據該設計座標位置與該對準標記的座標位置的距離以及到最外層還剩下的層數,計算該特定半徑及該第1半徑。 In the eighth alignment device, the calculation unit calculates the specific radius and the first one according to the distance between the design coordinate position and the coordinate position of the alignment mark and the number of layers remaining to the outermost layer. radius.

第9樣態的對位裝置,具有一輸入單元,使操作者輸入該特定半徑及該第1半徑。 The ninth aspect of the aligning device has an input unit for the operator to input the specific radius and the first radius.

第10樣態的曝光裝置,其包括載置該光罩的光罩台及移動該基板的基板台,並具有如第1~9樣態中任一種所記載的對位裝置。 An exposure apparatus according to a tenth aspect, comprising: a mask stage on which the mask is placed; and a substrate stage on which the substrate is moved, and having the alignment device according to any one of the first to ninth aspects.

本發明的對位裝置及曝光裝置之優點在於:能夠適當地修正曝光位置以使其接近本來應該在的位置(光罩的設計座標位置等),並同時將電路圖形曝光。 The alignment device and the exposure device of the present invention are advantageous in that the exposure position can be appropriately corrected so as to be close to the position (the design coordinate position of the photomask, etc.) where it should be, and at the same time, the circuit pattern is exposed.

(投影曝光裝置100的構成) (Configuration of Projection Exposure Apparatus 100)

第1圖為投影曝光裝置100的各元件配置的示意圖。 FIG. 1 is a schematic view showing the arrangement of components of the projection exposure apparatus 100.

如第1圖所示,投影曝光裝置100包括:光源部20、投影光學系統40、以及固持印刷基板PB的基板台部50。 另外,投影曝光裝置100具有:雷射干涉計60、對準攝影機70、控制部80。 As shown in FIG. 1, the projection exposure apparatus 100 includes a light source unit 20, a projection optical system 40, and a substrate stage 50 that holds the printed substrate PB. Further, the projection exposure apparatus 100 includes a laser interferometer 60, an alignment camera 70, and a control unit 80.

光源部20包括:照射包含特定波長的紫外線的光之水銀燈21、將該水銀燈21照射出的光集中並反射的橢圓反射鏡23、以及用以將從該橢圓反射鏡23照射出的光的照 度分佈均一化的複眼透鏡25。複眼透鏡25將已被均一化的光照射到繪有電路圖形的光罩MK上。在光罩MK上,於電路圖形的周邊還繪有光罩標記MM。光罩MK載置於光罩台部30。透過光罩MK的光前進到投影光學系統40。 The light source unit 20 includes a mercury lamp 21 that illuminates light including ultraviolet rays having a specific wavelength, an elliptical mirror 23 that condenses and reflects the light emitted from the mercury lamp 21, and a light for illuminating the light emitted from the elliptical mirror 23. The compound eye lens 25 is uniformly distributed. The fly-eye lens 25 illuminates the light that has been uniformized onto the mask MK on which the circuit pattern is drawn. On the reticle MK, a reticle mark MM is also drawn on the periphery of the circuit pattern. The mask MK is placed on the mask stage 30. Light passing through the reticle MK proceeds to the projection optical system 40.

投影光學系統40設置為在光罩MK和印刷基板PB之間各光學元件為對稱。該投影光學系統40,在配置於中央的反射體42的上方設置入射側凸透鏡41,在下方設置出射側凸透鏡46。入射側凸透鏡41及出射側凸透鏡46係以反射體42為中央而共軸配置,且分別作為單透鏡而被配置,在此為雙面凸透鏡。入射側凸透鏡41和出射側凸透鏡46在此構成為具有同樣折射率。 The projection optical system 40 is disposed to be symmetrical with respect to each optical element between the photomask MK and the printed substrate PB. In the projection optical system 40, an incident side convex lens 41 is provided above the reflector 42 disposed at the center, and an exit side convex lens 46 is provided below. The incident side convex lens 41 and the exit side convex lens 46 are arranged coaxially with the reflector 42 as a center, and are respectively arranged as a single lens, which is a lenticular lens. The incident side convex lens 41 and the exit side convex lens 46 are configured to have the same refractive index.

入射側凸透鏡41使得透過光罩MK的投影光入射到反射體42的第1反射面42a。反射體42係為改變光路方向的反射鏡,其具有:使得透過了入射側凸透鏡41的投影光偏向的第1反射面42a;以及使得從凹面反射鏡45射過來的投影光偏向的第2反射面42b。入射側凸透鏡41係設定為,在第1圖中僅有從透鏡中央之左半邊為對投影光有效的光路。另外,出射側凸透鏡46係使得從反射體42的第2反射面42b反射的投影光集中。和入射側凸透鏡41一樣,該出射側凸透鏡46設定為,僅有從透鏡中央之左半邊為對投影光有效的光路。 The incident side convex lens 41 causes the projection light transmitted through the mask MK to enter the first reflection surface 42a of the reflector 42. The reflector 42 is a mirror that changes the direction of the optical path, and has a first reflection surface 42a that deflects the projection light that has passed through the incident side convex lens 41, and a second reflection that deflects the projection light that is emitted from the concave mirror 45. Face 42b. The incident side convex lens 41 is set such that, in the first drawing, only the left half of the center of the lens is an effective optical path for the projection light. Further, the exit side convex lens 46 concentrates the projection light reflected from the second reflection surface 42b of the reflector 42. Like the incident side convex lens 41, the exit side convex lens 46 is set so that only the left half of the center of the lens is an effective light path for the projection light.

共軸地設置修正光學系統的第1凸透鏡43及平凸透鏡44,並且,在和該平凸透鏡44相對面的位置設置凹面反射鏡45。凹面反射鏡45係設置用以調整投影光學系統40的 遠心。 The first convex lens 43 and the plano-convex lens 44 of the correction optical system are disposed coaxially, and a concave mirror 45 is provided at a position facing the plano-convex lens 44. The concave mirror 45 is provided to adjust the projection optical system 40 Far hearted.

基板台部50包括:平台51、移動鏡53、馬達等的驅動部55及定盤57。平台51係藉由驅動部55而在定盤57上於X軸方向及Y軸方向移動。另外,平台51藉由驅動部55在定盤57上以Z軸為中心向θ方向回轉,並在Z軸方向上下移動。 The substrate stage 50 includes a stage 51, a moving mirror 53, a drive unit 55 such as a motor, and a fixed plate 57. The stage 51 is moved on the fixed plate 57 in the X-axis direction and the Y-axis direction by the drive unit 55. Further, the stage 51 is rotated in the θ direction around the Z axis by the drive unit 55 on the fixed plate 57, and moves up and down in the Z-axis direction.

基板台部50的平台51載置印刷基板PB,印刷基板PB係藉由真空吸附而固定在平台51上。再者,在平台51上配置基準標記FM及移動鏡53(53X、53Y)。基準標記FM係設置於平台51的不會被配置印刷基板PB的周邊一處。移動鏡53由下列構成:用以確認X軸方向的位置而在Y軸方向延伸的X軸移動鏡53X(參見第2圖)、用以確認Y軸方向的位置而在X軸方向上延伸的Y軸移動鏡53Y(參見第2圖)。 The printed circuit board PB is placed on the stage 51 of the substrate stage 50, and the printed circuit board PB is fixed to the stage 51 by vacuum suction. Further, the reference mark FM and the moving mirror 53 (53X, 53Y) are placed on the stage 51. The reference mark FM is provided at a position on the periphery of the stage 51 where the printed circuit board PB is not disposed. The moving mirror 53 is composed of an X-axis moving mirror 53X (see FIG. 2) extending in the Y-axis direction for confirming the position in the X-axis direction, and extending in the X-axis direction for confirming the position in the Y-axis direction. Y-axis moving mirror 53Y (see Figure 2).

雷射干涉計60,對移動鏡53(53X、53Y)照射雷射光,並使其反射的雷射光和照射於未圖示的固定鏡的雷射光干涉,而以奈米層級測定平台51的平台座標位置。再者,移動鏡53(53X、53Y)及雷射干涉計60無須常備於投影曝光裝置100。只要在投影曝光裝置100定期檢查時或出貨時暫時載置移動鏡53和雷射干涉計60,以奈米層級測定平台51的平台座標位置,並使儲存部82記錄其和由驅動部57的編碼器等的測定部取得的座標位置的相對位置關係。 The laser interferometer 60 irradiates the moving mirrors 53 (53X, 53Y) with laser light, and interferes with the laser light that is reflected by the laser beam and the laser beam that is irradiated to the fixed mirror (not shown), and the platform of the nanometer level measuring platform 51 is used. Coordinate position. Furthermore, the moving mirrors 53 (53X, 53Y) and the laser interferometer 60 need not be conventionally provided in the projection exposure apparatus 100. As long as the moving mirror 53 and the laser interferometer 60 are temporarily placed at the time of periodic inspection or shipment of the projection exposure apparatus 100, the platform coordinate position of the stage 51 is measured in a nanometer level, and the storage section 82 records the sum of the driving section 57. The relative positional relationship of the coordinate positions acquired by the measuring unit such as the encoder.

對準攝影機70具有半反射鏡及CCD,透過半反射鏡等用CCD感光光罩MK的光罩標記MM及印刷基板PB的對準標 記AM。依據CCD感光的光罩標記MM和對準標記AM的偏移量及用雷射干涉計60測定的座標位置,測定對準標記AM的座標位置。在本實施型態中,在光罩MK上繪有4個光罩標記MM,將光罩MK的電路圖形及光罩標記MM曝光在印刷基板PB上時,在電路圖形CP的周圍形成4個對準標記AM。因此,在本實施型態中,配置有4個對準攝影機70。 The alignment camera 70 has a half mirror and a CCD, and the reticle mark MM of the CCD photosensitive mask MK and the alignment mark of the printed substrate PB are transmitted through a half mirror or the like. Remember AM. The coordinate position of the alignment mark AM is determined based on the offset of the CCD-sensing mask mark MM and the alignment mark AM and the coordinate position measured by the laser interferometer 60. In the present embodiment, four mask marks MM are drawn on the mask MK, and when the circuit pattern of the mask MK and the mask mark MM are exposed on the printed substrate PB, four patterns are formed around the circuit pattern CP. Align the mark AM. Therefore, in the present embodiment, four alignment cameras 70 are disposed.

另外,對準攝影機70也能夠透過半反射鏡等用CCD感光配置於平台51的基準標記FM和光罩標記MM。該對準攝影機70設有移動單元,其移動使得在曝光時從光路退避而在拍攝對準標記AM時插入到投影光學系統40的光軸方向。 Further, the alignment camera 70 can also align the reference mark FM and the mask mark MM disposed on the stage 51 with a CCD by a half mirror or the like. The alignment camera 70 is provided with a moving unit that moves so as to be retracted from the optical path at the time of exposure and inserted into the optical axis direction of the projection optical system 40 when the alignment mark AM is photographed.

控制部80控制投影曝光裝置100的整體的動作,並控制光罩MK的光罩標記MM和轉印於印刷基板PB的對準標記AM的對位動作。例如,控制部80透過驅動部55而控制平台51的位置。再者,控制部80具有儲存部82,其係儲存該對準標記AM應該要形成在印刷基板的設計座標位置MC。該儲存部82儲存由對準攝影機70提供的座標位置、光罩MK的電路圖形轉印在印刷基板PB的位置等。控制部80更包括計算部84,其係計算轉印到次一層的對準標記的座標位置。 The control unit 80 controls the overall operation of the projection exposure apparatus 100, and controls the alignment operation of the mask mark MM of the mask MK and the alignment mark AM transferred to the printed board PB. For example, the control unit 80 controls the position of the stage 51 through the drive unit 55. Furthermore, the control unit 80 has a storage portion 82 that stores the alignment mark AM to be formed at the design coordinate position MC of the printed substrate. The storage unit 82 stores the coordinate position provided by the alignment camera 70, the position at which the circuit pattern of the mask MK is transferred to the printed circuit board PB, and the like. The control unit 80 further includes a calculation unit 84 that calculates a coordinate position of the alignment mark transferred to the next layer.

(載置於平台51的印刷基板PB) (Printed substrate PB placed on the stage 51)

第2圖顯示從上方(+Z軸方向)觀看載置了印刷基板PB的平台51的概念圖。另外,在第2圖下側還繪有將印刷基板PB一部份放大的圖。 Fig. 2 is a conceptual view showing the stage 51 on which the printed circuit board PB is placed viewed from above (+Z-axis direction). Further, a part of the printed circuit board PB is enlarged on the lower side of Fig. 2 .

在平台51的周圍配置X軸移動鏡53X和Y軸移動鏡 53Y,並且在平台51的周邊配置基準標記FM。而且,印刷基板PB係藉由真空吸附而固定在平台51的中央。例如,在第2圖中,從1片印刷基板PB製造出4片電路基板。1個電路圖形轉印到1片電路基板,所以電路圖形CP1~CP4被轉印。 An X-axis moving mirror 53X and a Y-axis moving mirror are arranged around the platform 51. 53Y, and the reference mark FM is placed around the platform 51. Further, the printed substrate PB is fixed to the center of the stage 51 by vacuum suction. For example, in FIG. 2, four circuit boards are manufactured from one printed circuit board PB. One circuit pattern is transferred to one circuit board, so the circuit patterns CP1 to CP4 are transferred.

在光罩MK上,於電路圖形周圍繪有4個光罩標記MM,所以,在1個電路圖形CP的周圍也形成4個對準標記AM。在第2圖中繪有十字形狀的對準標記AM,不過其也可以是圓形等。在本說明書中,將形成於第m層的對準標記AM稱之為第m對準標記AMm。亦即,形成於第1層的對準標記AM稱之為第1對準標記AM1。另外,在用建造法形成的多層構造的印刷基板中也有超過30層的印刷基板。 On the mask MK, four mask marks MM are drawn around the circuit pattern, so that four alignment marks AM are formed around one circuit pattern CP. In the second drawing, an alignment mark AM of a cross shape is drawn, but it may also be a circle or the like. In the present specification, the alignment mark AM formed on the mth layer is referred to as an mth alignment mark AMm. That is, the alignment mark AM formed on the first layer is referred to as a first alignment mark AM1. Further, in the printed circuit board having a multilayer structure formed by the construction method, there are also more than 30 printed circuit boards.

投影曝光裝置100係為步進式的曝光裝置。因此,藉由一次轉印(one shot,一次閃光),就形成第2圖下側所示的電路圖形CP4和4個對準標記AM1。在形成第2層的電路圖形時,使用第1層的4個對準標記AM1,對位之後轉印電路圖形。繼之,針對投影曝光裝置100的對位進行說明。 The projection exposure apparatus 100 is a step type exposure apparatus. Therefore, the circuit pattern CP4 and the four alignment marks AM1 shown on the lower side of Fig. 2 are formed by one shot (one shot). When the circuit pattern of the second layer is formed, the four alignment marks AM1 of the first layer are used, and the circuit pattern is transferred after the alignment. Next, the alignment of the projection exposure apparatus 100 will be described.

(對位方法的概略) (summary of the alignment method)

第3圖為使用投影曝光裝置100進行對位的對位方法的流程圖。 FIG. 3 is a flow chart showing a method of aligning the alignment using the projection exposure apparatus 100.

步驟S11~S16為關於光罩的對位之步驟。 Steps S11 to S16 are steps for alignment of the photomask.

在步驟S11中,使平台51上的基準標記FM移動至向光罩標記MM的設計位置。此時,干涉計60測定平台51的 平台座標位置,以保證基準標記FM位於設計位置。 In step S11, the fiducial mark FM on the stage 51 is moved to the design position to the reticle mark MM. At this time, the interferometer 60 measures the platform 51 The position of the platform coordinates to ensure that the fiducial mark FM is at the design position.

在步驟S12中,對準攝影機70檢出基準標記FM,並儲存設計座標位置MC。 In step S12, the alignment camera 70 detects the reference mark FM and stores the design coordinate position MC.

在本實施型態中,因為在光罩MK上繪有4個光罩標記MM,所以,如步驟S13所示,在剩下的光罩標記MM的設計位置重複執行步驟S11~步驟S12。 In the present embodiment, since four mask marks MM are drawn on the mask MK, steps S11 to S12 are repeatedly executed at the design position of the remaining mask marks MM as shown in step S13.

在步驟S14中,將光罩標記MM對準在步驟S12中儲存的設計座標位置MC。藉此,使光罩MK位置對準於基板台部50的設計上的位置,基板台部50的座標位置由干涉計60測定。 In step S14, the reticle mark MM is aligned to the design coordinate position MC stored in step S12. Thereby, the position of the mask MK is aligned with the design position of the substrate stage 50, and the coordinate position of the substrate stage 50 is measured by the interferometer 60.

在步驟S15中,對準攝影機70檢出光罩標記MM的位置,並儲存在攝影機視野中的位置。藉此也儲存了在步驟S12中儲存的作為基準的設計座標位置MC與光罩標記MM的相互位置關係。 In step S15, the alignment camera 70 detects the position of the reticle mark MM and stores it at the position in the field of view of the camera. Thereby, the mutual positional relationship between the design coordinate position MC as the reference stored in step S12 and the reticle mark MM is also stored.

在步驟S16中,於平台51上載置已形成有第1層的印刷基板PB。亦即,第1對準標記AM1已經被轉印到印刷基板PB上。另外,也同樣可以適用於已形成有從第2層到最外層的前一層的印刷基板上。 In step S16, the printed circuit board PB on which the first layer has been formed is placed on the stage 51. That is, the first alignment mark AM1 has been transferred onto the printed substrate PB. Further, the same can be applied to the printed circuit board on which the previous layer from the second layer to the outermost layer has been formed.

在步驟S16中,測定印刷基板PB的XY平面上的回轉角θ、X軸及Y軸方向的補償量。印刷基板PB係在從X軸方向傾斜特定角度θ的狀態下載置於平台51上,或載置為從特定位置向X軸方向或Y軸方向偏移。因此,在步驟S16中,使平台51向例如X軸方向移動,對準攝影機70測定複數個第1對準標記AM1。繼之,測定印刷基板PB的回轉 角θ,同時計算例如印刷基板PB的中心位置的XY座標位置。依據計算出來的XY座標位置,再計算出印刷基板PB的X軸及Y軸方向的補償量、或者一次閃光的X軸及Y軸方向的補償量。補償量係儲存於儲存部82中。 In step S16, the amount of compensation in the yaw angle θ, the X-axis, and the Y-axis direction on the XY plane of the printed board PB is measured. The printed circuit board PB is placed on the stage 51 in a state of being inclined by a specific angle θ from the X-axis direction, or placed on the X-axis direction or the Y-axis direction from a specific position. Therefore, in step S16, the stage 51 is moved in the X-axis direction, for example, and the alignment camera 70 measures a plurality of first alignment marks AM1. Then, the rotation of the printed substrate PB is measured. The angle θ simultaneously calculates the XY coordinate position of, for example, the center position of the printed substrate PB. Based on the calculated XY coordinate position, the compensation amount in the X-axis and Y-axis directions of the printed circuit board PB or the compensation amount in the X-axis and Y-axis directions of one flash is calculated. The compensation amount is stored in the storage unit 82.

繼之,判斷載置於平台51的印刷基板PB的回轉角θ是否進入特定範圍內。此係為了使平台51的X軸或Y軸方向與印刷基板PB的X軸或Y軸方向大致上一致。若印刷基板PB的回轉角θ沒有進入特定範圍內,則使平台51回轉θ以使得回轉角θ進入特定範圍內。若印刷基板PB的回轉角θ進入特定範圍內,則執行步驟S17。 Next, it is judged whether or not the rotation angle θ of the printed substrate PB placed on the stage 51 is within a specific range. This is to make the X-axis or Y-axis direction of the stage 51 substantially coincide with the X-axis or Y-axis direction of the printed circuit board PB. If the rotational angle θ of the printed substrate PB does not enter a specific range, the stage 51 is rotated by θ such that the rotational angle θ enters a specific range. If the rotation angle θ of the printed substrate PB is within a specific range, step S17 is performed.

步驟S17~步驟S18為使光罩和基板對位的步驟。 Steps S17 to S18 are steps of aligning the photomask and the substrate.

在步驟S17中,印刷基板PB上的對準攝影機70測定第1對準標記AM1。在此,係參照第4圖表示對準攝影機70已測定之第1對準標記AM1。 In step S17, the alignment camera 70 on the printed substrate PB measures the first alignment mark AM1. Here, referring to Fig. 4, the first alignment mark AM1 measured by the alignment camera 70 is shown.

第4圖為重疊描繪第1層被轉印的印刷基板PB的一部份及光罩MK的光罩標記MM的圖。另外,在步驟S11中,係描繪使平台51上的基準標記FM向光罩標記MM的設計位置移動後的位置以作為設計座標位置MC。並在本實施型態中將之稱為設計座標位置MC。 Fig. 4 is a view in which a part of the printed circuit board PB to which the first layer is transferred and the mask mark MM of the mask MK are superimposed and drawn. Further, in step S11, the position where the reference mark FM on the stage 51 is moved to the design position of the mask mark MM is drawn as the design coordinate position MC. In the present embodiment, this is referred to as a design coordinate position MC.

由於轉印精確度造成的誤差、蝕刻或熱處理之故,載置於平台51上的印刷基板PB的電路圖形及對準標記的位置,未必和光罩MK的設計座標位置一致。在第4圖中,係為第1對準標記AM1大幅偏離光罩MK的設計座標位置而被轉印之例。傳統上,將接下來的第2層的光罩MK轉印到向 這樣的第1層的印刷基板PB上時,係將第2層的對準標記AM2轉印為盡可能和第1對準標記AM1一致。但是,經過反覆積層之後,第1層的對準標記和最上層的對準標記就大幅偏離了。因此,本實施型態中的計算部84,不僅考慮到第1對準標記AM1還考慮到設計座標位置MC,計算出第2層對準標記轉印的目標座標位置TG(參見第5~第8圖)。 The position of the circuit pattern and the alignment mark of the printed substrate PB placed on the stage 51 does not necessarily coincide with the design coordinate position of the mask MK due to the error, etching or heat treatment caused by the transfer accuracy. In Fig. 4, the first alignment mark AM1 is largely displaced from the design coordinate position of the mask MK and transferred. Traditionally, the next layer 2 mask MK is transferred to the direction In the case of the first printed circuit board PB of the first layer, the alignment mark AM2 of the second layer is transferred so as to coincide with the first alignment mark AM1. However, after the reverse layering, the alignment mark of the first layer and the alignment mark of the uppermost layer are largely deviated. Therefore, the calculation unit 84 in the present embodiment calculates the target coordinate position TG of the second layer alignment mark transfer in consideration of the design of the coordinate position MC in consideration of the first alignment mark AM1 (see the fifth to the first 8 picture).

再次回到第3圖,在步驟S20中,計算部84計算出第2層(次層)的第2對準標記AM2應該要轉印的目標座標位置TG。計算的方法則如後述。 Returning to Fig. 3 again, in step S20, the calculation unit 84 calculates the target coordinate position TG at which the second alignment mark AM2 of the second layer (secondary layer) should be transferred. The calculation method is as follows.

在步驟S18中,平台51藉由驅動部55而移動,使得光罩標記MM對準計算得知的目標座標位置TG。繼之,平台51移動之後,光源部20照射光罩MK,透過光罩MK的光藉由投影光學系統40而轉印到印刷基板PB。 In step S18, the stage 51 is moved by the driving portion 55 so that the reticle mark MM is aligned with the calculated target coordinate position TG. Then, after the stage 51 is moved, the light source unit 20 illuminates the mask MK, and the light transmitted through the mask MK is transferred to the printed board PB by the projection optical system 40.

(目標座標位置TG的計算方法) (How to calculate the target coordinate position TG)

從第5圖~第8圖為計算目標座標位置TG的計算方法的概念圖。從第5圖~第8圖為將第4圖所示之左下圖的第1對準標記AM1的周邊(用二點虛線圍出的圓內)放大的圖。 Fig. 5 to Fig. 8 are conceptual diagrams for calculating a calculation method of the target coordinate position TG. 5 to 8 are enlarged views of the periphery of the first alignment mark AM1 (in a circle surrounded by a two-dot chain line) in the lower left diagram shown in Fig. 4 .

<計算方法1> <Calculation Method 1>

在第5圖中,第1對準標記AM1為藉由對準攝影機70測定之座標位置。計算部84,在連接儲存於儲存部82的設計座標位置MC和第1對準標記AM1的座標位置之直線LN上,計算目標座標位置TG。目標座標位置TG為將直線LN的長度以P(%):Q(%)的比例分割之位置。例如P為 20%到60%。此係因為,若P為20%以下,則目標座標位置TG就不會接近設計座標位置MC。又因為,若P為60%以上,則第1層的電路圖形和第2層的電路圖形很可能不會重疊對準。 In Fig. 5, the first alignment mark AM1 is a coordinate position measured by the alignment camera 70. The calculation unit 84 calculates the target coordinate position TG on the straight line LN that connects the design coordinate position MC stored in the storage unit 82 and the coordinate position of the first alignment mark AM1. The target coordinate position TG is a position where the length of the straight line LN is divided by a ratio of P (%): Q (%). For example, P is 20% to 60%. This is because if P is 20% or less, the target coordinate position TG does not approach the design coordinate position MC. Further, if P is 60% or more, the circuit pattern of the first layer and the circuit pattern of the second layer are likely to be overlapped and aligned.

再者,計算部84計算目標座標位置TG之後,即設定以目標座標位置TG為中心的特定範圍90。使平台51移動讓光罩標記MM進入特定範圍90時,就完成對準。特定範圍90係為目標座標位置TG為中心之半徑RA的範圍。可以讓操作者從輸入裝置(未圖示)輸入此半徑RA。或者,也可以由計算部84,依據印刷基板PB所要求的尺寸精確度而計算出該半徑RA。 Further, after the calculation unit 84 calculates the target coordinate position TG, the specific range 90 centering on the target coordinate position TG is set. When the platform 51 is moved to bring the reticle mark MM into a certain range 90, the alignment is completed. The specific range 90 is a range of the radius RA centered on the target coordinate position TG. The operator can input this radius RA from an input device (not shown). Alternatively, the radius RA may be calculated by the calculation unit 84 in accordance with the dimensional accuracy required for the printed substrate PB.

另外,半徑RA可以是越靠近最外層就越小。基本上,在內層程序、積層程序、建造程序、焊阻程序、突塊程序及各種的程序中,隨著圖形的層積,越靠近外層則精確度的規定就越嚴格。因此,可為在第1層等的半徑RA比較大,最外層的半徑RA則變小。 In addition, the radius RA may be smaller as it is closer to the outermost layer. Basically, in the inner layer program, the layer stacking program, the building program, the solder resist program, the bump program, and various programs, as the graphics are stacked, the closer to the outer layer, the stricter the specification. Therefore, the radius RA in the first layer or the like can be relatively large, and the radius RA of the outermost layer can be made small.

依據計算方法1的對準,並非如傳統那樣將光罩標記MM對準於第1對準標記AM1,而是對準使其靠近設計座標位置MC。因此,最外層的電路圖形得以靠近設計座標位置MC。 According to the alignment of the calculation method 1, the reticle mark MM is not aligned with the first alignment mark AM1 as in the conventional case, but is aligned to be close to the design coordinate position MC. Therefore, the outermost circuit pattern is brought close to the design coordinate position MC.

<計算方法2> <Calculation Method 2>

如同第5圖,在第6圖中,第1對準標記AM1在偏離設計座標位置MC的位置上藉由對準攝影機70測定。繼之,計算部84設定第1對準標記AM1的容許範圍91。同樣地, 也對設計座標位置MC設定容許範圍92。 As in Fig. 5, in Fig. 6, the first alignment mark AM1 is measured by the alignment camera 70 at a position deviated from the design coordinate position MC. Next, the calculation unit 84 sets the allowable range 91 of the first alignment mark AM1. Similarly, The allowable range 92 is also set for the design coordinate position MC.

第1對準標記AM1的容許範圍91係設定為,形成於第2層的電路圖形和第1層的電路圖形導通的範圍。例如,容許範圍91為第1對準標記AM1為中心之半徑RB的圓內。設計座標位置MC的容許範圍92則設定為,和印刷基板PB最外層上的IC等的電子元件導通的範圍。例如,容許範圍92為設計座標位置MC為中心之半徑RC的圓內。可以讓操作者從輸入裝置(未圖示)輸入半徑RB及半徑RC。或者,也可以由計算部84設定半徑RB及半徑RC,使其越靠近外層越小。 The allowable range 91 of the first alignment mark AM1 is set to a range in which the circuit pattern formed on the second layer and the circuit pattern of the first layer are turned on. For example, the allowable range 91 is within a circle having the radius RB centered on the first alignment mark AM1. The allowable range 92 of the design coordinate position MC is set to be a range in which the electronic components such as ICs on the outermost layer of the printed circuit board PB are electrically connected. For example, the allowable range 92 is within the circle of the radius RC at which the design coordinate position MC is centered. The operator can input the radius RB and the radius RC from an input device (not shown). Alternatively, the calculation unit 84 may set the radius RB and the radius RC so as to be smaller toward the outer layer.

計算部84,計算連接設計座標位置MC和第1對準標記AM1的座標位置之直線LN與容許範圍91的圓周的交點MG、以及直線LN與容許範圍92的圓周的交點MF。並且,計算部84計算交點MG和交點MF的中點,並以其作為目標座標位置TG。 The calculation unit 84 calculates an intersection MG between the straight line LN connecting the design coordinate position MC and the coordinate position of the first alignment mark AM1 and the circumference of the allowable range 91, and the intersection MF of the circumference of the straight line LN and the allowable range 92. Further, the calculation unit 84 calculates the midpoint of the intersection MG and the intersection MF, and uses it as the target coordinate position TG.

計算部84計算出目標座標位置TG之後,將容許範圍91的圓內和容許範圍92的圓內重疊的範圍設定為目標座標位置TG的特定範圍93。當平台51移動讓光罩標記MM進入特定範圍93時,對準就完成了。依據計算方法2的對準,並非如傳統那樣,將光罩標記MM對準第1對準標記AM1,而是對準使其靠近設計座標位置MC。因此,最外層的電路圖形得以靠近設計座標位置MC。 After the calculation unit 84 calculates the target coordinate position TG, the range in which the circle within the allowable range 91 and the circle of the allowable range 92 overlap is set as the specific range 93 of the target coordinate position TG. When the platform 51 is moved to bring the reticle mark MM into the specific range 93, the alignment is completed. According to the alignment of the calculation method 2, the reticle mark MM is not aligned with the first alignment mark AM1 as in the conventional one, but is aligned to be close to the design coordinate position MC. Therefore, the outermost circuit pattern is brought close to the design coordinate position MC.

<計算方法3> <Calculation Method 3>

計算方法3係為將計算方法1及計算方法2組合而成 的方法。使用第7圖說明的計算方法3,計算部84在計算交點MG和交點MF的中點以作為目標座標位置TG為止,都和計算方法2一樣。計算部84計算出目標座標位置TG之後,設定以目標座標位置TG為中心的特定範圍94。特定範圍94係為以目標座標位置TG為中心之半徑RA的範圍。可以讓操作者從輸入裝置(未圖示)輸入此半徑RA。當平台51移動讓光罩標記MM進入特定範圍94時,對準就完成了。 The calculation method 3 is a combination of the calculation method 1 and the calculation method 2 Methods. Using the calculation method 3 described in FIG. 7, the calculation unit 84 calculates the intersection point MG and the midpoint of the intersection point MF as the target coordinate position TG, and is the same as the calculation method 2. After the calculation unit 84 calculates the target coordinate position TG, the calculation unit 84 sets a specific range 94 centering on the target coordinate position TG. The specific range 94 is a range of the radius RA centered on the target coordinate position TG. The operator can input this radius RA from an input device (not shown). When the platform 51 is moved to bring the reticle mark MM into the specific range 94, the alignment is completed.

<計算方法4> <Calculation Method 4>

在第8圖所示之計算方法4中,計算部84設定第1對準標記AM1的容許範圍91,並設定設計座標位置MC的容許範圍92。第1對準標記AM1的容許範圍91為,以第1對準標記AM1為中心之半徑RB的圓內。設計座標位置MC的容許範圍92為,以設計座標位置MC為中心之半徑RC的圓內。 In the calculation method 4 shown in FIG. 8, the calculation unit 84 sets the allowable range 91 of the first alignment mark AM1, and sets the allowable range 92 of the design coordinate position MC. The allowable range 91 of the first alignment mark AM1 is within the circle of the radius RB centering on the first alignment mark AM1. The allowable range 92 of the design coordinate position MC is within the circle of the radius RC centered on the design coordinate position MC.

計算部84,計算容許範圍91的圓周和容許範圍92的圓周相交的交點MH及交點MI,並計算連接交點MH與交點MI的直線LO。繼之,計算部84,求出直線LO與連接設計座標位置MC和第1對準標記AM1的座標位置之直線LN的交點。計算部84計算直線LO和直線LN的交點以作為目標座標位置TG。然後,設定以目標座標位置TG為中心的特定範圍95。特定範圍95係為以目標座標位置TG為中心之半徑RA的範圍。可以讓操作者從輸入裝置(未圖示)輸入此半徑RA。當平台51移動讓光罩標記MM進入特定範圍95時,對準就完成了。 The calculation unit 84 calculates an intersection MH and an intersection MI at which the circumference of the allowable range 91 and the circumference of the allowable range 92 intersect, and calculates a straight line LO connecting the intersection MH and the intersection MI. Next, the calculation unit 84 obtains the intersection of the straight line LO and the straight line LN connecting the design coordinate position MC and the coordinate position of the first alignment mark AM1. The calculation unit 84 calculates the intersection of the straight line LO and the straight line LN as the target coordinate position TG. Then, a specific range 95 centering on the target coordinate position TG is set. The specific range 95 is a range of the radius RA centered on the target coordinate position TG. The operator can input this radius RA from an input device (not shown). When the platform 51 is moved to bring the reticle mark MM into a certain range 95, the alignment is completed.

以上雖已針對本發明之最佳實施型態進行詳細說明,但如同本領域業者所知,本發明在其技術範圍內可以在實施例中加入各種變更及變形而實施。例如,在計算方法4中雖以目標座標位置TG為中心之半徑RA的範圍作為特定範圍,但如同計算方法2,也可以將容許範圍91的圓內和容許範圍92的圓內重疊的範圍設定為目標座標位置TG的特定範圍93。 The present invention has been described in detail with reference to the preferred embodiments of the present invention. For example, in the calculation method 4, although the range of the radius RA centered on the target coordinate position TG is a specific range, as in the calculation method 2, the range in which the circle within the allowable range 91 and the circle of the allowable range 92 are overlapped may be set. It is a specific range 93 of the target coordinate position TG.

20‧‧‧光源部 20‧‧‧Light source department

21‧‧‧水銀燈 21‧‧‧ Mercury lamp

23‧‧‧橢圓反射鏡 23‧‧‧Oval mirror

25‧‧‧複眼透鏡 25‧‧‧Future eye lens

30‧‧‧光罩台部 30‧‧‧Mask table

40‧‧‧投影光學系統 40‧‧‧Projection optical system

41‧‧‧入射側凸透鏡 41‧‧‧Injection side convex lens

42‧‧‧反射體 42‧‧‧ reflector

42a‧‧‧第1反射面 42a‧‧‧1st reflecting surface

42b‧‧‧第2反射面 42b‧‧‧2nd reflecting surface

43‧‧‧第1凸透鏡 43‧‧‧1st convex lens

44‧‧‧平凸透鏡 44‧‧‧ Plano-convex lens

45‧‧‧凹面反射鏡 45‧‧‧ concave mirror

46‧‧‧出射側凸透鏡 46‧‧‧Extending convex lens

50‧‧‧基板台部 50‧‧‧Substrate table

51‧‧‧平台 51‧‧‧ platform

53‧‧‧移動鏡 53‧‧‧Mobile mirror

55‧‧‧驅動部 55‧‧‧ Drive Department

57‧‧‧定盤 57‧‧ ‧ fixing

60‧‧‧雷射干涉計 60‧‧‧Laser Interferometer

70‧‧‧對準攝影機 70‧‧‧Aligning camera

80‧‧‧控制部 80‧‧‧Control Department

82‧‧‧儲存部 82‧‧‧ Storage Department

84‧‧‧計算部 84‧‧‧ Calculation Department

90、93、94‧‧‧特定範圍 90, 93, 94‧‧ ‧ specific range

91、92‧‧‧容許範圍 91, 92‧‧‧ Permissible range

100‧‧‧投影曝光裝置 100‧‧‧Projection exposure device

AM‧‧‧對準標記(第1層的對準標記AM1) AM‧‧ Alignment mark (alignment mark AM1 of the first layer)

FM‧‧‧基準標記 FM‧‧‧ benchmark mark

LN、LO‧‧‧直線 LN, LO‧‧‧ Straight line

MC‧‧‧設計座標位置 MC‧‧‧Design coordinates location

MF、MG、MH、MI‧‧‧交點 MF, MG, MH, MI‧‧‧ intersection

MK‧‧‧光罩 MK‧‧‧Photo Mask

MM‧‧‧光罩標記 MM‧‧‧mask mark

PB‧‧‧印刷基板 PB‧‧‧Printing substrate

RA、RB、RC‧‧‧半徑 Radius of RA, RB, RC‧‧

TG‧‧‧目標座標位置 TG‧‧‧target coordinate position

第1圖為投影曝光裝置100的各元件配置的示意圖。 FIG. 1 is a schematic view showing the arrangement of components of the projection exposure apparatus 100.

第2圖顯示從上方觀看載置了印刷基板PB的平台51的概念圖。 Fig. 2 is a conceptual view showing the stage 51 on which the printed substrate PB is placed as viewed from above.

第3圖為對位方法的流程圖。 Figure 3 is a flow chart of the alignment method.

第4圖為第1層轉印的印刷基板PB的一部份、及光罩MK的設計座標位置重疊描繪的圖。 Fig. 4 is a view in which a part of the printed circuit board PB transferred to the first layer and the design coordinate position of the mask MK are overlapped and drawn.

第5圖為計算目標座標位置TG的計算方法1的概念圖。 Fig. 5 is a conceptual diagram of a calculation method 1 for calculating a target coordinate position TG.

第6圖為計算目標座標位置TG的計算方法2的概念圖。 Fig. 6 is a conceptual diagram of a calculation method 2 for calculating a target coordinate position TG.

第7圖為計算目標座標位置TG的計算方法3的概念圖。 Fig. 7 is a conceptual diagram of a calculation method 3 for calculating a target coordinate position TG.

第8圖為計算目標座標位置TG的計算方法4的概念圖。 Fig. 8 is a conceptual diagram of a calculation method 4 for calculating a target coordinate position TG.

20‧‧‧光源部 20‧‧‧Light source department

21‧‧‧水銀燈 21‧‧‧ Mercury lamp

23‧‧‧橢圓反射鏡 23‧‧‧Oval mirror

25‧‧‧複眼透鏡 25‧‧‧Future eye lens

30‧‧‧光罩台部 30‧‧‧Mask table

40‧‧‧投影光學系統 40‧‧‧Projection optical system

41‧‧‧入射側凸透鏡 41‧‧‧Injection side convex lens

42‧‧‧反射體 42‧‧‧ reflector

42a‧‧‧第1反射面 42a‧‧‧1st reflecting surface

42b‧‧‧第2反射面 42b‧‧‧2nd reflecting surface

43‧‧‧第1凸透鏡 43‧‧‧1st convex lens

44‧‧‧平凸透鏡 44‧‧‧ Plano-convex lens

45‧‧‧凹面反射鏡 45‧‧‧ concave mirror

46‧‧‧出射側凸透鏡 46‧‧‧Extending convex lens

50‧‧‧基板台部 50‧‧‧Substrate table

51‧‧‧平台 51‧‧‧ platform

53‧‧‧移動鏡 53‧‧‧Mobile mirror

55‧‧‧驅動部 55‧‧‧ Drive Department

57‧‧‧定盤 57‧‧ ‧ fixing

60‧‧‧雷射干涉計 60‧‧‧Laser Interferometer

70‧‧‧對準攝影機 70‧‧‧Aligning camera

80‧‧‧控制部 80‧‧‧Control Department

82‧‧‧儲存部 82‧‧‧ Storage Department

84‧‧‧計算部 84‧‧‧ Calculation Department

FM‧‧‧基準標記 FM‧‧‧ benchmark mark

MK‧‧‧光罩 MK‧‧‧Photo Mask

MM‧‧‧光罩標記 MM‧‧‧mask mark

PB‧‧‧印刷基板 PB‧‧‧Printing substrate

Claims (10)

一種對位裝置,其係執行繪有預定要轉印的圖形及光罩標記的光罩及被轉印該圖形及對準標記的基板的對準,該對位裝置包含:儲存部,其係儲存是基於該光罩標記之座標位置且是該對準標記應該要形成在該基板之座標位置的設計座標位置;測定部,其係測定被轉印到該基板的對準標記的座標位置;以及計算部,其係計算將該測定部測定得到的該對準標記的座標位置向該設計座標位置移動特定距離之目標座標位置;其中該目標座標位置和該光罩的該光罩標記相對地對位。 A aligning device for performing alignment of a reticle with a pattern and a reticle mark intended to be transferred and a substrate to which the pattern and the alignment mark are transferred, the aligning device comprising: a storage portion The storage is based on a coordinate position of the reticle mark and is a design coordinate position at which the alignment mark should be formed at a coordinate position of the substrate; and a measuring portion that measures a coordinate position of the alignment mark transferred to the substrate; And a calculation unit that calculates a target coordinate position of the coordinate position of the alignment mark measured by the measuring unit to the design coordinate position by a specific distance; wherein the target coordinate position is opposite to the reticle mark of the reticle Counterpoint. 如申請專利範圍第1項所述的對位裝置,該計算部係將連接該對準標記的座標位置和該設計座標位置之直線上的一點作為該目標座標位置。 The registration device according to claim 1, wherein the calculation unit uses a point on a straight line connecting the coordinate position of the alignment mark and the design coordinate position as the target coordinate position. 如申請專利範圍第1項所述的對位裝置,該計算部計算連接該對準標記的座標位置和該設計座標位置之直線與以該設計座標位置為圓心之特定半徑的圓周的交點、以及該直線與以該對準標記的座標位置為圓心之第1半徑的圓周的交點,並以該等交點的中心作為該目標座標位置。 The registration device according to claim 1, wherein the calculation unit calculates an intersection of a line connecting the coordinate position of the alignment mark and the design coordinate position with a circumference of a specific radius centered on the design coordinate position, and The line is at the intersection of the circumference of the first radius of the center of the circle with the coordinate position of the alignment mark, and the center of the intersection is used as the target coordinate position. 如申請專利範圍第1項所述的對位裝置,該計算部計算以該設計座標位置為圓心之特定半徑的圓周與以該對 準標記的座標位置為圓心之第1半徑的圓周的2個交點,並以連接該2個交點的直線和連接該對準標記的座標位置和該設計座標位置之直線的交點作為該目標座標位置。 The registration device according to claim 1, wherein the calculation unit calculates a circumference of a specific radius centered on the design coordinate position and the pair The coordinate position of the quasi-mark is two intersections of the circumference of the first radius of the center, and the intersection of the line connecting the two intersection points and the line connecting the coordinate position of the alignment mark and the line of the design coordinate position is used as the target coordinate position. . 如申請專利範圍第1~4項任一項所述的對位裝置,將包含該目標座標位置的特定範圍內,作為轉印到次一層的對準標記的領域以進行對位。 The alignment device according to any one of claims 1 to 4, wherein the alignment device is included in the specific range including the target coordinate position, and is aligned in the field of the alignment mark transferred to the next layer. 如申請專利範圍第5項所述的對位裝置,係以該目標座標位置為圓心之第2半徑內作為該特定範圍。 The alignment device according to claim 5, wherein the target radius is within the second radius of the center of the circle as the specific range. 如申請專利範圍第5項所述的對位裝置,該計算部係將以該設計座標位置為圓心之特定半徑內的容許範圍與以該對準標記的座標位置為圓心之第1半徑內的容許範圍的重疊區域作為該特定範圍。 The registration device according to claim 5, wherein the calculation unit has an allowable range within a specific radius centered on the design coordinate position and a first radius within a center of the coordinate position of the alignment mark The overlapping area of the allowable range is taken as the specific range. 如申請專利範圍第3、4、7項中任一項所述的對位裝置,係由該計算部,依據該設計座標位置與該對準標記的座標位置的距離以及到最外層還剩下的層數,計算該特定半徑及該第1半徑。 The aligning device according to any one of claims 3, 4, and 7, wherein the calculating portion is based on the distance between the design coordinate position and the coordinate position of the alignment mark and remaining to the outermost layer. The number of layers, the specific radius and the first radius are calculated. 如申請專利範圍第3、4、7項中任一項所述的對位裝置,具有一輸入單元,使操作者輸入該特定半徑及該第1半徑。 The alignment device according to any one of claims 3, 4, and 7, has an input unit that allows an operator to input the specific radius and the first radius. 一種曝光裝置,其包括載置該光罩的光罩台及移動該基板的基板台;並具有如申請專利範圍第1~9項中任一項所記載的對位裝置。 An exposure apparatus comprising a mask stage on which the mask is placed and a substrate stage on which the substrate is moved; and the alignment apparatus according to any one of claims 1 to 9.
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