TWI539240B - 用於微影之照明光學系統以及具有此類型之照明光學系統的投射曝光系統 - Google Patents
用於微影之照明光學系統以及具有此類型之照明光學系統的投射曝光系統 Download PDFInfo
- Publication number
- TWI539240B TWI539240B TW100120852A TW100120852A TWI539240B TW I539240 B TWI539240 B TW I539240B TW 100120852 A TW100120852 A TW 100120852A TW 100120852 A TW100120852 A TW 100120852A TW I539240 B TWI539240 B TW I539240B
- Authority
- TW
- Taiwan
- Prior art keywords
- grating
- illumination
- light
- angle
- optical system
- Prior art date
Links
- 238000005286 illumination Methods 0.000 title claims description 270
- 230000003287 optical effect Effects 0.000 title claims description 54
- 238000001393 microlithography Methods 0.000 title description 2
- 238000009826 distribution Methods 0.000 claims description 69
- 230000001419 dependent effect Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000001459 lithography Methods 0.000 claims description 5
- 238000003384 imaging method Methods 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 22
- 210000001747 pupil Anatomy 0.000 description 18
- 230000000875 corresponding effect Effects 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 3
- IYLGZMTXKJYONK-ACLXAEORSA-N (12s,15r)-15-hydroxy-11,16-dioxo-15,20-dihydrosenecionan-12-yl acetate Chemical compound O1C(=O)[C@](CC)(O)C[C@@H](C)[C@](C)(OC(C)=O)C(=O)OCC2=CCN3[C@H]2[C@H]1CC3 IYLGZMTXKJYONK-ACLXAEORSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- IYLGZMTXKJYONK-UHFFFAOYSA-N ruwenine Natural products O1C(=O)C(CC)(O)CC(C)C(C)(OC(C)=O)C(=O)OCC2=CCN3C2C1CC3 IYLGZMTXKJYONK-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70083—Non-homogeneous intensity distribution in the mask plane
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
- G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Microscoopes, Condenser (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010030089A DE102010030089A1 (de) | 2010-06-15 | 2010-06-15 | Beleuchtungsoptik für die Mikro-Lithografie sowie Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201219987A TW201219987A (en) | 2012-05-16 |
| TWI539240B true TWI539240B (zh) | 2016-06-21 |
Family
ID=45020111
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100120852A TWI539240B (zh) | 2010-06-15 | 2011-06-15 | 用於微影之照明光學系統以及具有此類型之照明光學系統的投射曝光系統 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9933704B2 (enExample) |
| EP (1) | EP2583141B1 (enExample) |
| JP (1) | JP5753260B2 (enExample) |
| DE (1) | DE102010030089A1 (enExample) |
| TW (1) | TWI539240B (enExample) |
| WO (1) | WO2011157601A2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014010552A1 (ja) * | 2012-07-10 | 2014-01-16 | 株式会社ニコン | 照明光学系、露光装置、およびデバイス製造方法 |
| JP5864771B2 (ja) * | 2012-10-08 | 2016-02-17 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ投影露光装置の照明系 |
| DE102013213545A1 (de) | 2013-07-10 | 2015-01-15 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithografie |
| KR102102020B1 (ko) | 2013-08-09 | 2020-04-17 | 케이엘에이 코포레이션 | 향상된 검출 감도를 위한 멀티 스팟 조명 |
| DE102014203347B4 (de) | 2014-02-25 | 2017-09-14 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Mikro-Lithografie sowie Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik |
| DE102014203348A1 (de) | 2014-02-25 | 2015-08-27 | Carl Zeiss Smt Gmbh | Bündelverteilungsoptik, Beleuchtungsoptik mit einer derartigen Bündelverteilungsoptik, optisches System mit einer derartigen Beleuchtungsoptik sowie Projektionsbelichtungsanlage mit einem derartigen optischen System |
| US9575412B2 (en) * | 2014-03-31 | 2017-02-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for reducing pole imbalance by adjusting exposure intensity |
| DE102014219112A1 (de) * | 2014-09-23 | 2016-03-24 | Carl Zeiss Smt Gmbh | Beleuchtungsoptik für die Projektionslithographie sowie Hohlwellenleiter-Komponente hierfür |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6259513B1 (en) | 1996-11-25 | 2001-07-10 | Svg Lithography Systems, Inc. | Illumination system with spatially controllable partial coherence |
| JP3005203B2 (ja) | 1997-03-24 | 2000-01-31 | キヤノン株式会社 | 照明装置、露光装置及びデバイス製造方法 |
| JP4401060B2 (ja) | 2001-06-01 | 2010-01-20 | エーエスエムエル ネザーランズ ビー．ブイ． | リトグラフ装置、およびデバイス製造方法 |
| JP2004245912A (ja) * | 2003-02-12 | 2004-09-02 | Ushio Inc | 光照射装置 |
| DE102004063848A1 (de) * | 2004-02-26 | 2005-09-15 | Carl Zeiss Smt Ag | Beleuchtungssystem für eine Mikrolithographie-Projektionsbelichtungsanlage |
| JP2006253529A (ja) * | 2005-03-14 | 2006-09-21 | Nikon Corp | 照明光学装置、露光装置、および露光方法 |
| JP5068271B2 (ja) | 2006-02-17 | 2012-11-07 | カール・ツァイス・エスエムティー・ゲーエムベーハー | マイクロリソグラフィ照明システム、及びこの種の照明システムを含む投影露光装置 |
| US8587764B2 (en) | 2007-03-13 | 2013-11-19 | Nikon Corporation | Optical integrator system, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| US8937706B2 (en) | 2007-03-30 | 2015-01-20 | Asml Netherlands B.V. | Lithographic apparatus and method |
| US8379187B2 (en) | 2007-10-24 | 2013-02-19 | Nikon Corporation | Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method |
| KR20180072841A (ko) * | 2007-11-06 | 2018-06-29 | 가부시키가이샤 니콘 | 조명 광학계, 노광 장치 및 노광 방법 |
| US9636187B2 (en) | 2007-11-21 | 2017-05-02 | Misonix Incorporated | Atomized-fluid shield for surgery and method of use |
| ATE532105T1 (de) * | 2007-12-21 | 2011-11-15 | Zeiss Carl Smt Gmbh | Beleuchtungsmethode |
| DE102008009600A1 (de) * | 2008-02-15 | 2009-08-20 | Carl Zeiss Smt Ag | Facettenspiegel zum Einsatz in einer Projektionsbelichtungsanlage für die Mikro-Lithographie |
| DE102009017941A1 (de) * | 2008-06-19 | 2009-12-24 | Carl Zeiss Smt Ag | Beleuchtungssystem für die Mikro-Lithographie sowie Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem |
| EP2146248B1 (en) * | 2008-07-16 | 2012-08-29 | Carl Zeiss SMT GmbH | Illumination system of a microlithographic projection exposure apparatus |
| DE102008042462B4 (de) * | 2008-09-30 | 2010-11-04 | Carl Zeiss Smt Ag | Beleuchtungssystem für die EUV-Mikrolithographie |
| DE102009009568A1 (de) * | 2008-10-20 | 2010-04-29 | Carl Zeiss Smt Ag | Optische Baugruppe zur Führung eines EUV-Strahlungsbündels |
-
2010
- 2010-06-15 DE DE102010030089A patent/DE102010030089A1/de not_active Withdrawn
-
2011
- 2011-06-08 JP JP2013514638A patent/JP5753260B2/ja active Active
- 2011-06-08 EP EP11723967.3A patent/EP2583141B1/en active Active
- 2011-06-08 WO PCT/EP2011/059427 patent/WO2011157601A2/en not_active Ceased
- 2011-06-15 TW TW100120852A patent/TWI539240B/zh active
-
2012
- 2012-11-20 US US13/681,938 patent/US9933704B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011157601A2 (en) | 2011-12-22 |
| JP2013530534A (ja) | 2013-07-25 |
| EP2583141B1 (en) | 2021-04-14 |
| EP2583141A2 (en) | 2013-04-24 |
| WO2011157601A3 (en) | 2012-02-23 |
| US20130077076A1 (en) | 2013-03-28 |
| DE102010030089A1 (de) | 2011-12-15 |
| JP5753260B2 (ja) | 2015-07-22 |
| US9933704B2 (en) | 2018-04-03 |
| TW201219987A (en) | 2012-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI539240B (zh) | 用於微影之照明光學系統以及具有此類型之照明光學系統的投射曝光系統 | |
| KR101470769B1 (ko) | 마이크로리소그래픽 투영 노광 장치의 조명 시스템 | |
| US9804499B2 (en) | Illumination system of a microlithographic projection exposure apparatus | |
| JP6347895B2 (ja) | 投影リソグラフィのための照明光学ユニット及びそのための中空導波管構成要素 | |
| KR101427456B1 (ko) | 마이크로리소그래피용 조명 시스템 | |
| KR102344280B1 (ko) | 조명 시스템 | |
| JP2014514772A (ja) | マイクロリソグラフィ投影露光装置の照明系 | |
| TW201702756A (zh) | 微影投射設備的操作方法 | |
| KR20170113654A (ko) | Euv 투영 리소그라피를 위한 조명 광학기기 | |
| JP7071436B2 (ja) | Ｅｕｖ投影リソグラフィのための照明光学系及び照明系 | |
| CN111656245B (zh) | 投射光刻的照明光学单元 | |
| US10488567B2 (en) | Faceted mirror for EUV projection lithography and illumination optical unit with same | |
| WO2017046136A1 (en) | Illumination optical unit for projection lithography | |
| KR101992516B1 (ko) | 마이크로리소그래피 장치의 작동 방법 | |
| JP6457754B2 (ja) | 投影リソグラフィのための照明光学ユニット | |
| JP2015517733A (ja) | Ｅｕｖ投影リソグラフィのための照明光学ユニット | |
| WO2012034571A1 (en) | Illumination system of a microlithographic projection exposure apparatus | |
| US10018917B2 (en) | Illumination optical unit for EUV projection lithography | |
| US10281823B2 (en) | Illumination system of a microlithographic projection exposure apparatus | |
| TW201626111A (zh) | 用以照明一照明場的照明光學單元以及包含此類照明光學單元的投射曝光裝置 |