TWI536513B - A resin forming apparatus and a method for manufacturing the semiconductor device - Google Patents

Description

Resin molding device and method of manufacturing semiconductor device

The present invention relates to a resin molding apparatus, and more particularly to an apparatus for protecting a semiconductor device by a release film, and further comprising a resin-molded semiconductor device.

The present invention relates to a method of manufacturing a semiconductor device, and more particularly to a semiconductor manufacturing method of a semiconductor device in which a plurality of resin-molded semiconductor devices are collectively protected by a release film to protect each semiconductor device.

In recent years, with the demand for high functionality or lightness and thinness of electronic devices, high-density integration or high-density mounting of electronic components has progressed. In CCD (Charge Coupled Device) image sensor or CMOS (Complementary Metal) Oxide Semiconductor) CSP (Chip Size Package) is also used in electronic components such as image sensors that have been used in relatively large packages. In particular, on the active surface side of the sensor wafer, a rib (lib) or a spacer is used to directly laminate the sealing glass, and a wafer-sized package having a hollow structure is gradually used.

In the resin sealing process of the sensor device, in order to prevent the thin burr of the resin from being generated in the sealing glass, the thin film using the release film is used. The film is molded into a shape, but even if it is molded by a film, it is difficult to completely prevent the occurrence of thin burrs. The sensor device is a laminate substrate (wiring substrate), a sensor wafer, a rib (a spacer), and a sealing glass, and variations in thickness are caused to cause variation in thickness of the laminate. Then, variations in the thickness of the laminate cause variations in the adhesion between the film and the sealing glass in each of the sensor devices. The deviation of the adhesion will result in a thin burr.

[Advanced technical literature] [Patent Literature]

[Patent Document 1] International Publication No. 2012/140750

In view of the above-described problems of the prior art, in the case where a plurality of semiconductor devices are resin-molded, the adhesion between the semiconductor devices and the release film is improved, and the occurrence of thin burrs is suppressed.

An embodiment of the present invention is an apparatus for removing a protective film (112a) for protecting a semiconductor device (1), and a device for integrally molding a plurality of resin-molded semiconductor devices, characterized by comprising: a metal mold (100) in which the plurality of semiconductor devices and the release film are disposed; A plurality of movable cores (104) are provided in the metal mold for each of the semiconductor devices, and the release film (112) can be adjusted by a movable core (104) of each semiconductor device (1). The pressing force to the aforementioned semiconductor device (1).

This device is a semiconductor device for a plurality of semiconductor devices, and the pressing force of the release film is adjusted by the movable core. Therefore, even if the height of the semiconductor device varies or is inclined, the release film can be adhered to the lowest height. In the case of the semiconductor device, the mold is clamped, and the pressing force from the release film is not excessive in other semiconductor devices, and is adhered to the release film. For example, in the mold clamping of the mold, the amount of protrusion of the movable core is designed such that the release film is adhered to the semiconductor device having the lowest height. Further, when the semiconductor device is tilted, by tilting the pressing surface of the movable core with the inclination of the semiconductor device, the movable sand core can be adhered to the semiconductor without applying excessive pressing force to the semiconductor device. Device. Therefore, the adhesion between the semiconductor device and the release film can be improved while suppressing the excessive pressing force of the release film and lowering the reliability of the semiconductor device. As a result, it is possible to suppress generation of resin into the field of protection of the semiconductor device to cause thin burrs.

Further, an elastic body (105) is provided which is configured to adjust the pressing force of the movable core (104) to the semiconductor device (1).

When the movable sand core is pushed by the elastic body toward the semiconductor device, when the pressing force of the movable sand core to the semiconductor device is equal to or greater than a predetermined value, the movable sand core is displaced against the elastic thrust of the elastic body, thereby preventing the movable sand core from being displaced. Movable sand core The pushing force on the semiconductor device is excessively large.

The elastomer may be, for example, a spring, a rubber or a combination of a spring and a rubber.

The semiconductor device (1) has an imaging element, and the protection field (110a) is a field defined on the sealing glass (110) covering the active field of the imaging element.

It is possible to suppress the occurrence of thin burrs in the sealing glass of the image sensor and to achieve good light transmission through the sealing glass. The imaging element is, for example, a CCD image sensor or a CMOS image sensor.

An embodiment of the present invention is a method of manufacturing a semiconductor device, which is characterized in that a release film (112) protects a field of protection of each semiconductor device (1) (110a), and a semiconductor device in which a plurality of semiconductor devices are resin-molded The method is characterized in that the pressing force of the release film (112) to the semiconductor device (110) is adjusted by the movable core (104) provided in the metal mold (100) for each semiconductor device (1). .

In this method, the pressing force of the release film is adjusted by the movable core for each semiconductor device. Therefore, even if the height of the semiconductor device varies or is inclined, the release film can be adhered to the semiconductor device having the lowest height. When the mold is closed, there is no possibility that the pressing force from the release film is excessive in other semiconductor devices, and it is in close contact with the release film. Therefore, it is possible to improve the adhesion between each semiconductor device and the release film while suppressing the excessive pressing force of the release film and reducing the reliability of the semiconductor device. As a result, the resin can be prevented from entering the semiconductor package. Set the protection area to produce thin burrs.

The pressing force of the movable core (104) to the semiconductor device (1) is adjusted by pushing the elastic body (105) of the movable core (104).

When the movable sand core is pushed by the elastic body toward the semiconductor device, when the pressing force of the movable sand core to the semiconductor device is equal to or greater than a predetermined value, the movable sand core is displaced against the elastic thrust of the elastic body, thereby preventing the movable sand core from being displaced. The movable sand core excessively increases the pressing force on the semiconductor device.

The elastomer may be, for example, a spring, a rubber or a combination of a spring and a rubber.

The semiconductor device (1) has an imaging element, and the protection field (110a) is a field defined on the sealing glass (110) covering the active field of the imaging element.

It is possible to suppress the occurrence of thin burrs in the sealing glass of the image sensor and to achieve good light transmission through the sealing glass. The imaging element is, for example, a CCD image sensor or a CMOS image sensor.

1‧‧‧Semiconductor device

100‧‧‧Formed metal mold

101‧‧‧Metal mold

102‧‧‧Upper metal mold

102a, 102b‧‧‧ openings

103‧‧‧ cavity

104‧‧‧ movable sand core

104a‧‧‧Flange

104b‧‧‧ bottom

105‧‧‧ Elastomers

106‧‧‧ Film escaping recess

107‧‧‧Substrate (wiring board)

108‧‧‧Semiconductor wafer

109‧‧‧ Ribs or spacers

110‧‧‧Seal glass

111‧‧‧Under the glass hole

112‧‧‧ release film

1 is a cross-sectional view showing a state in which a semiconductor device is placed on a molding die of a resin molding apparatus in a method of manufacturing a semiconductor device according to an embodiment of the present invention.

Fig. 2 is a cross-sectional view showing a state in which the molding die of Fig. 1 is clamped.

3 is a cross-sectional view showing a state in which a semiconductor device is placed on a molding die of a resin molding device in a method of manufacturing a semiconductor device of a comparative example. Figure.

Fig. 4 is a cross-sectional view showing a state in which the molding die of Fig. 3 is clamped.

Fig. 5 is a cross-sectional view showing a state in which the state of Fig. 4 is reclosed.

1 is a cross-sectional view showing a state in which a plurality of semiconductor devices 1 are placed on a molding die 100 of a resin molding apparatus in a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 2 is a view showing a state in which the molding die 100 of FIG. 1 is clamped. Although two semiconductor devices 1 are illustrated in FIGS. 1 and 2, the number of semiconductor devices may be three or more.

The semiconductor device 1 includes a substrate 107, a semiconductor wafer 108, ribs or spacers 109, and a sealing glass 110. The stage of resin molding is a state in which a plurality of semiconductor wafers 108 are disposed on a common substrate 107. However, after resin molding, the substrate 107 is divided for each semiconductor device 1. The semiconductor wafer 108 is, for example, a sensor wafer. The sensor chip is, for example, an image pickup element including a CCD image sensor or a CMOS image sensor. Further, a field in which the resin is prevented from entering by the release film 112 on the upper surface of the sealing glass 110 is defined as the protection field 110a. In addition, the semiconductor device 1 is not limited to the above-described configuration, and may be a semiconductor device having a structure in which a heat sink or a crystal grain is exposed on the surface of the resin molded portion (from the field of resin protection).

In the example of FIGS. 1 and 2, the height of the semiconductor device 1 on the right side except the substrate 107 (semiconductor wafer 108, ribs or spacers) 109 and the height of the sealing glass 110 are H1, and the height of the semiconductor device 1 on the left side other than the substrate 107 is H2 (>H1), and the difference H2-H1 between the heights of the two is H3. In the following description, the heights H1 and H2 of the semiconductor device 1 excluding the substrate 107 are simply referred to as the height of the semiconductor device 1.

The forming metal mold 100 is composed of a lower metal mold 101 and an upper metal mold 102, and a cavity 103 is formed on the lower surface of the upper metal mold 102. An opening portion 102a and an opening portion 102b wider than the opening portion 102a on the back side of the opening portion 102a are formed on the bottom surface of the cavity 103. In the openings 102a and 102b, the movable core 104 is slidable in the vertical direction. A flange 104a is provided on the opening portion 102b side of the movable core 104, and the movable core 104 is restricted from being displaced downward by abutting the flange 104a between the opening portion 102a and the step portion of the opening portion 102b. An elastic body 105 is interposed between the bottom surface of the opening portion 102b and the movable core 104, and the movable core 104 is pushed downward so that the flange 104a of the movable core 104 can abut against the step portion. The elastic body 105 is constituted by, for example, a spring, a rubber, or a combination of a spring and a rubber, but is not limited thereto. The spring is, for example, a Belleville spring (disc spring). The rubber is a rubber having heat resistance, and may be, for example, a ruthenium rubber. The elastic body 105 has a function of elastically pushing the movable core 104 downward to bring the release film 102 into close contact with the sealing glass 111 of the semiconductor device 1. The movable core 104 is configured to be elastically pushed by the elastic body 105, whereby the movable core 104 can be inclined with the inclination of the cover glass 110 even if the cover glass 110 is inclined. The bottom surface (pushing surface) 104b of the movable core 104 is a sealing glass corresponding to the semiconductor device 1. A recess 106 for film escape is formed in the field of the cavity 111 inside the glass 110. The recess 106 for film escape has a field corresponding to the cavity 111 in a plan view, and the release film (release film) 112 is compressed by the above metal mold 102 and the lower metal mold 101 to clamp the semiconductor device 1. The portion where the thickness is reduced, that is, the depth above the magnitude of the compression amount (for example, a depth of about 0.3 mm to about 0.5 mm).

However, the depth of the recess 106 for film escape is such that the pressure applied by the release film 112 to the sealing glass 110 above the cavity 111 during the clamping is within an allowable range (the range in which the sealing glass does not break), even if it is compressed The smaller the size, the more you can.

Further, the field of the recess 106 for film escape in plan view is ideal for the field of the cavity 111, but the pressure applied to the sealing glass 110 by the release film 112 over the cavity 111 is an allowable range as long as it is clamped. Even smaller than the field of the hole 111 is fine. Further, as long as the occurrence of the thin burr of the sealing glass 111 can be prevented, even the field of the recess 106 for film escape in plan view may overlap with the area occupied by the rib or the spacer 109.

In the present embodiment, the semiconductor device 1 is a wafer-sized package (CSP) in which a sealing glass 110 is directly laminated on the active surface side of the semiconductor wafer 108 by a rib or a spacer 109 to form a hollow structure. The semiconductor device 1 includes a substrate 107 as a wiring board, a semiconductor wafer 108 fixed to the substrate 107, and a rib or a spacer 109 supported on the sensor wafer 108 to maintain a predetermined semiconductor wafer 108. The sealing glass 110 is disposed at intervals.

Although not shown, the actual substrate 107 is provided with an inner conductor pad (upper side) and an outer conductor pad (lower side) which are electrically connected to each other via via holes, and the inner conductor pads are bonded to the semiconductor wafer 108 via bonding wires. connection. The semiconductor wafer 108 has an active surface including a light receiving field, and is a component in which a CCD (Charge Coupled Device) image sensor or a CMOS (Complementary Metal Oxide Semiconductor) image sensor is formed, and has an input/output pad. (not shown), which is used for connection to the substrate 107 by a bonding wire. The rib or spacer 109 is a frame-shaped member having a predetermined thickness and is fixed to the peripheral portion of the active surface so as to surround the active surface of the semiconductor wafer 108. The sealing glass 110 is secured to the ribs or spacers 109 to hermetically seal the semiconductor wafer 108 with the ribs or spacers 109. With such a configuration, a cavity 111 is formed between the semiconductor wafer 108 and the cover glass 110.

The resin molding of the above-described forming metal mold 100 is such that the release film 112 is attached to the cavity 103 of the upper metal mold 102 as shown in FIG. At this time, the release film 112 is also disposed on the bottom surface (pressing surface) of the movable core 104. After the plurality of semiconductor devices 1 (FIG. 1) are placed in the lower mold 101, the molding die 100 is clamped, and the lower metal mold 101 and the upper metal mold 102 clamp the semiconductor device 1 (FIG. 2).

The mold clamping of the molding die 100 is performed such that the mold release film 112 is adhered to the upper surface of the sealing glass 110 of the semiconductor device 1 (height H1) having the lowest height, and the upper mold is lowered. The movable core 104 above the semiconductor device 1 is moved upward in the opposite direction to the spring of the elastic body 105. The amount of protrusion of the movable core 104 (the amount by which the movable core 104 protrudes from the bottom surface of the cavity 103 in the state of FIG. 1) is such that the release film 112 can be adhered to the lowest height at the time of mold clamping of the molding die 100. The design of the semiconductor device 1 is as follows. Although the movable core 104 above the semiconductor device 1 on the left side is also lowered to the height H1, since the height of the semiconductor device 1 on the left side is H2 (>H1), the elastic body 105 contracts and the movable core 104 is only H2. -H1 is displaced to the upper position, and stops above the semiconductor device 1 on the left side at a position suitable for the movable core 104. As a result, even when the upper metal mold 102 is lowered to the height (H1) of the semiconductor device 1 having the lowest height, there is no possibility that the other semiconductor device 1 (height H2) is excessively pressed by the movable core 104. The movable core 104 to be distributed to each of the semiconductor devices 1 can be brought into close contact with the sealing glass 110 by an appropriate pressing force. Further, when the semiconductor device 1 is tilted, since the pressing surface 104b of the movable core 104 can be inclined with the inclination of the upper surface of the semiconductor device 1 (the cover glass 110), excessive pressing force is not applied to the semiconductor. In the case of the device 1, the movable core 104 can be brought into close contact with the cover glass 110 of the semiconductor device 1. In this state, the release film 112 is adhered to the sealing glass 110 of the semiconductor device 1, and the protective field 110a defined on the sealing glass 110 is protected. More specifically, in the resin molding operation, the resin is prevented from entering the protective field 110a on the sealing glass 110, and the release film 112 is adhered to the sealing glass 110 at a pressure that does not cause thin burrs on the sealing glass 110. Then, by the transfer molding (TRANSFER MOLDING) method The resin is supplied into the cavity 103 to seal the periphery of the semiconductor device 100 with a resin.

When the semiconductor device 1 is clamped by the molding die 100, the pressing pressure is applied to the sealing glass 110 from the bottom surface 104b of the movable core 104 via the release film 112. At this time, in the portion above the rib or the spacer 109 of the sealing glass 110, since the release film 112 and the sealing glass 110 are sandwiched by the bottom surface 104b of the movable core 104 and the rib or the spacer 109, The mold film 112 is compressed by the pressing pressure from the cavity 103, and a pressing force is applied from the release film 112 to the sealing glass 110. On the other hand, except for the portion above the rib or the spacer 109 (the portion above the cavity 111), the release film 112 is opposed to the recess 106 for film escape formed by the bottom surface of the movable core 104. The mold film 112 escapes to the recess 106 for film escape, so it is not compressed. Therefore, above the cavity 111, the release film 112 does not transmit the pressing pressure from the bottom surface 104b of the movable core 104 to the sealing glass 110, and the bending stress is not applied to the sealing glass 110. As a result, it is possible to prevent the portion of the sealing glass 110 above the cavity 111 from being subjected to bending stress and being broken.

(Comparative example)

3 is a view showing a state in which a plurality of semiconductor devices 1 are placed on a molding die 100 of a resin molding device in a method of manufacturing a semiconductor device according to a comparative example of the semiconductor device manufacturing method of the present invention. Sectional view. In the molding die 100 of the comparative example, the movable core 104 and the elastic body 105 are not provided in the die cavity 103. Membrane escape The recess 106 is provided on the bottom surface of the die cavity 103. Fig. 4 is a cross-sectional view showing a state in which the molding die 100 shown in Fig. 3 is clamped.

According to the molding die of this comparative example, as shown in FIG. 4, the upper mold 102 is brought close to the lower metal mold 101, and the release film 112 can be adhered to the semiconductor device 1 on the left side with an appropriate pressure. When the upper surface of the sealing glass 110 is sealed, a gap corresponding to the height H3 (H2-H1) is generated between the upper surface of the sealing glass 110 of the semiconductor device 1 on the right side and the release film 112, and the semiconductor device 1 on the right side cannot be protected by the resin. Protection area 110a.

On the other hand, as shown in FIG. 5, once the upper metal mold 102 is closer to the upper surface of the sealing glass 110 of the semiconductor device 1 on the right side, the lower metal mold 101 to the release film 112 are pressed at an appropriate pressure. In the sealing glass 110 of the semiconductor device 1 on the left side, the upper metal mold 102 and the lower metal mold 103 are excessively clamped only by H3 (H2-H1) via the release film 112, and the semiconductor device 1 on the left side is excessively tightened. At this time, as shown in FIG. 5, the sealing glass 110, the rib, or the spacer 109 of the semiconductor device 1 on the left side is deformed, and the reliability of the semiconductor device 1 may be lowered.

On the other hand, according to the method of manufacturing the semiconductor device of the present embodiment, since the movable core 104 and the elastic body 105 are individually provided for each semiconductor device 1, even when the height between the semiconductor devices 1 varies, Further, the release film 112 can be appropriately adhered to the upper surface of each semiconductor device 1, and the protective field 110a of the semiconductor device 1 can be protected by resin without applying excessive pressing force to the semiconductor device 1. also In other words, even if the height between the semiconductor devices 1 varies, the mold core 104 can be adhered to the semiconductor device 1 having the lowest height by the mold clamping, and the movable core 104 can be distributed to the other semiconductor devices 1 respectively. The upper and lower positions are adjusted by the elastic body 105, and the release film 112 is pushed and adhered in such a manner that excessive pressure is not applied to the upper surface of the semiconductor device 1. Further, when the semiconductor device is tilted, the pressing surface of the movable core is inclined in accordance with the inclination of the semiconductor device, so that excessive pressing force is applied to the semiconductor device, and the movable sand core can be adhered to the semiconductor. Device. Therefore, according to the method of manufacturing a semiconductor device of the present embodiment, when a plurality of semiconductor devices are resin-molded, it is possible to prevent excessive pressure from being applied to the semiconductor device while the semiconductor device and the release film are interposed. Increased adhesion improves the occurrence of thin burrs.

1‧‧‧Semiconductor device

100‧‧‧Formed metal mold

101‧‧‧Metal mold

102‧‧‧Upper metal mold

102a, 102b‧‧‧ openings

103‧‧‧ cavity

104‧‧‧ movable sand core

104a‧‧‧Flange

104b‧‧‧ bottom

105‧‧‧ Elastomers

106‧‧‧ Film escaping recess

107‧‧‧Substrate (wiring board)

108‧‧‧Semiconductor wafer

109‧‧‧ Ribs or spacers

110‧‧‧Seal glass

110a‧‧‧Protection area

111‧‧‧Under the glass hole

112‧‧‧ release film

Claims (8)

An apparatus for removing a protective film (112a) of each semiconductor device (1) and resin-molding a plurality of semiconductor devices, characterized by comprising: a forming metal mold (100) a plurality of semiconductor devices and the release film; the cavity (103) disposed in the molding die; and a plurality of movable cores (104) each in the cavity The semiconductor device is provided to press the release film, and the molding die (100) includes a lower metal mold (101) for supporting the plurality of semiconductor devices (1), and a release film (112) to which the mold release film (112) is attached. In the upper metal mold (102), a plurality of openings (102a, 102b) are formed in the upper metal mold (102), and the plurality of movable sand cores (104) are in the plurality of openings (102a, 102b). The release film (112) is slidably disposed in the vertical direction, and is disposed in the molding die (100) in a field wider than that of the plurality of movable cores (104). In the plurality of openings (102a, 102b), a plurality of movable cores (104) are pushed, and in other fields, in contact with the upper metal mold (102), the release film (112) can be applied to the mold mold (100) during the mold clamping. The lowest height half of a plurality of semiconductor devices The projection device (1) is designed to closely fit the protrusion amount of the plurality of movable cores (104), and the release film can be adjusted by the movable core (104) provided for each of the semiconductor devices (1). (112) The pressing force to the semiconductor device (1) is such that the plurality of movable cores (104) are inclined by the inclination of each semiconductor device (1) to tilt the pressing surface. The apparatus of claim 1, further comprising an elastic body (105) configured to adjust a pressing force of the movable core (104) to the semiconductor device (1). The device of claim 2, wherein the elastomer (105) is a spring, a rubber or a combination of a spring and a rubber. The apparatus according to any one of claims 1 to 3, wherein the semiconductor device (1) includes an imaging element, and the protection field (110a) is a sealing glass covering an active field of the imaging element. (110) The area specified above. A method of manufacturing a semiconductor device, which is a method for manufacturing a semiconductor device in which a protective film region (110a) for protecting each semiconductor device (1) is protected by a release film (112) and a plurality of semiconductor devices are resin-molded, and is characterized in that: The movable core (104) is slidably disposed in a plurality of openings (102a, 102b) formed in the upper metal mold (102) of the molding die (100) in the vertical direction, and is larger than the movable sand core by the plurality of (104) to push the field In a broader field, the release film (112) is placed in a molding die (100), and the plurality of movable portions (102a, 102b) are elastically pushed by the plurality of movable cores (104). The release film (112) contacts the upper metal mold (102) with the release film (112) in the field of the other release film (112) to clamp the molding die (100) The release film (112) is capable of designing the amount of protrusion of the plurality of movable cores (104) in such a manner that the semiconductor device (1) having the lowest height of the plurality of semiconductor devices (1) is in close contact with each other, and the plurality of movable sands The core (104) is provided for each semiconductor device (1) in the cavity (103), and the movable sand core (104) is provided for each of the semiconductor devices (1) in the cavity (103). The pressing force of the release film (112) to the semiconductor device (110) is adjusted so that the pressing faces of the plurality of movable cores (104) are inclined with the inclination of the respective semiconductor devices (1). The method of manufacturing a semiconductor device according to claim 5, wherein the movable body (104) is adjusted to the semiconductor device by elastically pushing the elastic body (105) of the movable core (104) Pushing pressure. The method of manufacturing a semiconductor device according to claim 6, wherein the elastic body (105) is a spring, a rubber, or a combination of a spring and a rubber. Half as described in any of the scopes 5 to 7 of the patent application In the method of manufacturing a conductor device, the semiconductor device (1) includes an imaging element, and the protection field (110a) is a field defined by a sealing glass (110) covering an active area of the imaging element.